JP2008243516A - Contact mechanism device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a contact mechanism device capable of preventing a malfunction by a Coulomb force by preventing the generation of the Coulomb force between a package and a beam. <P>SOLUTION: This contact mechanism device has an element comprising a contact part having a beam structure, and a package sealing the element, and is characterized in that a metal deposition part is formed on the inside surface of the package, and a metal part allowing the metal deposition part to be connected to the ground is formed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a contact mechanism device having a beam structure, and more particularly to a device having a structure that prevents malfunction due to Coulomb force.

  Conventionally, regarding a contact mechanism device having a beam structure, “a contact mechanism device having a thin package and a method of manufacturing the contact mechanism device are provided. As a technology for the purpose of "a package by bonding an element forming substrate 35 on which a contact element (switch element 25) is formed and an element protection substrate 21 for protecting the contact element (switch element 25)" Is formed. Further, the contact element (switch element 25) includes magnetic bodies 26a and 28a, and switching is performed by applying a magnetic field to the magnetic bodies 26a and 28a. Is proposed (Patent Document 1).

JP 2005-108471 A (summary)

In the contact mechanism device having the structure as described in Patent Document 1, the package is charged by external frictional charging or the like, and the charge due to the applied voltage is charged on the surface of the beam or electrode, which may cause Coulomb force.
Then, there is a problem that the beam is not separated from the electrode only by applying a minute switching voltage to the contact mechanism device, and the device malfunctions.

  Therefore, a contact mechanism device that can prevent the occurrence of Coulomb force between the package and the beam and prevent malfunction due to the Coulomb force has been desired.

  A contact mechanism device according to the present invention is a contact mechanism device having an element portion composed of a contact portion having a beam structure and a package for sealing the element portion, and forming a metal vapor deposition portion on the inner wall of the package In addition, a metal part that enables ground connection of the metal deposition part is formed.

  According to the contact mechanism device according to the present invention, the charge generated in the package can be released to the ground, so that the Coulomb force is prevented from being generated between the package and the beam, and the malfunction due to the Coulomb force can be prevented. it can.

Embodiment 1 FIG.
FIG. 1 is a structural diagram of a contact mechanism device 100 according to Embodiment 1 of the present invention. Here, a micro reed switch will be described as an example.
The contact mechanism device 100 includes a substrate 101, a lower electrode 102, and an upper electrode 103.

  In the substrate 101, a copper foil 105 as a conductive material is stuck on an insulating substrate 104 made of a glass substrate, and unnecessary portions of the copper foil 105 are removed to form a wiring pattern.

The lower electrode 102 has a configuration in which the entire surface is covered with a conductive layer 106.
The conductive layer 106 is formed of gold (contact material) using a semiconductor process (photolithography method) and an electrolytic plating method, respectively.
Since gold is resistant to corrosion, the nickel layer 107 can be prevented from being oxidized by covering the nickel layer 107 with gold, and the conductive layer 106 itself can also be prevented from being oxidized. Therefore, an increase in contact resistance is prevented, the initial conductivity can be maintained, and the contact performance can be stabilized.
Further, the material constituting the conductive layer 106 is also required to play a role of preventing the nickel layer 107 from being eroded during the wet etching in the removal of the sacrificial layer 108 in the final process at the time of manufacturing the contact mechanism device 100. Therefore, it is suitable to use gold having etching resistance against an etching solution (for example, ferric chloride) used in the wet etching in the final process.

The upper electrode 103 has a cantilever structure portion 109 and a magnetic body portion 110 that are formed by using a photolithography method and an electrolytic plating method, respectively.
The cantilever structure 109 has a base 111 whose bottom surface is in contact with the copper beat 105 and a beam 112 supported by the base 111, and is gold (contact material) which is a conductive material having etching resistance. ).
The reason why gold is used as the contact material is to stabilize the contact performance as described above. Also, since gold is a flexible material with low hardness, the cantilever structure 109 is made of gold, so that the upper electrode 103 bends and comes into contact with the lower electrode 102 as will be described later. Operates as a device.

  Further, in order to protect the contact mechanism device 100 from the external environment, it is sealed with a glass package 114 having a counterbore 113. An insulating resin 115 is used as a sealant for the glass package 114.

  Furthermore, through holes 116 are provided on both sides of the substrate, and the inside of the through holes 116 is covered with metal (gold), so that the upper electrode 103 and the lower electrode 102 are connected to the back electrode 117.

  Here, prior to the description of the remaining configuration in FIG. 1, the manner in which electric charges are generated in the glass package 114 in the conventional contact mechanism device will be described.

  FIG. 6 is a structural diagram of a conventional contact mechanism device. In FIG. 6, the same components as those in FIG.

FIG. 7 explains the switching operation of a conventional contact mechanism device.
In FIG. 7, when the nickel layer 107 included in the upper electrode 103 is magnetized by the magnetic flux 117b of the permanent magnet 117a, an N pole and an S pole are induced in the nickel layer 107 included in the lower electrode 102. A magnetic attraction force 117 c is generated between the first electrode 103 and the lower electrode 102. Thereby, the upper electrode 103 bends and contacts the lower electrode 102.
When the permanent magnet 117a is removed, the magnetic attractive force 117c disappears and the upper electrode 103 returns.
In this way, the switching operation of the contact mechanism device is performed.

FIG. 8 is a diagram illustrating a state where electric charges are generated in the glass package 114.
Since the glass package 114 is an insulating material, for example, a positive charge a is charged to the glass package 114 due to frictional charging from the outside, and the positive polarity of the same polarity as the glass package 114 is applied to the surface of the beam portion 112 by the applied voltage. The charge b may be charged.
At this time, under the influence of the charged positive charges a and b, a Coulomb force c as a repulsive force acts between the glass package 114 and the beam portion 112, and the beam portion 112 is made to move to the lower electrode 102 by applying this Coulomb force c. Pushed to the side.
Then, the malfunction that the beam part 112 is no longer separated from the lower electrode 102 only by applying a minute switching voltage to the contact mechanism device occurs.
Similarly, charges having different polarities are generated in the beam portion 112 and the lower electrode 102, and an attractive force due to Coulomb force may be generated to cause malfunction.

In view of this, the present invention proposes a configuration for preventing malfunction caused by such charging by releasing the charge charged in the glass package 114.
Returning to the description of the remaining configuration in FIG.

In FIG. 1, for example, gold deposition 118 is formed on the inner wall of the glass package 114 with the counterbore 113, and a metal 118 a is formed from the gold deposition 118 on the side surface of the glass package 114 and the side surface of the insulating substrate 104 by a method such as plating or deposition. The ground electrode 118b provided on the back surface of the insulating substrate 104 is connected.
With this configuration, since the electric charge charged in the glass package 114 can be released to the ground, the Coulomb force (repulsive force) between the glass package 114 and the beam portion 112 is prevented, and the beam portion 112 is not separated from the lower electrode 102. Malfunctions can be prevented.

FIG. 2 is a diagram for explaining the operation of the contact mechanism device 100 according to the first embodiment.
In FIG. 2, a power source 120 for transmitting an element signal is connected to the back electrode 117, and a voltage is applied. In addition, a magnet 121 is disposed immediately below the contact mechanism device 100, and the nickel layer 107 included in the beam portion 122 is magnetized by the magnetic field 122 from the magnet 121.
As a result, an S pole and an N pole are induced in the nickel layer 107 of the lower electrode 102, and a magnetic attractive force 123 acts between the upper portion of the beam portion 112 and the nickel layer 107 of the lower electrode 102, and the beam portion 112 is The switch turns on when touched. At this time, a current flows from the power source 120, and the electrical signal is switched to an ON state.
When the magnetic field 122 is interrupted, the beam portion 122 returns to the original position due to the stiffness of the beam portion 122. As a result, the current from the power source 120 is cut off, and the electrical signal is switched to the OFF state.

  As described above, according to the first embodiment, the glass package 114 is charged by forming the gold vapor deposition 118 on the inner wall of the glass package 114 having the counterbore 113 and connecting the gold vapor deposition 118 to the ground electrode 118b. Therefore, it is possible to prevent the coulomb force from being generated between the glass package 114 and the beam portion 112 and to prevent the malfunction that the beam portion 112 is not separated from the lower electrode 102.

Embodiment 2. FIG.
FIG. 3 shows a configuration before the package of the contact mechanism device 100 according to the second embodiment of the present invention. The same components as those in FIG.
In FIG. 3, before packaging the contact mechanism device 100, for example, a metal piece 124 (such as copper) shaped like the glass package 114 is formed on the lower electrode 102 on the fixed side.

FIG. 4 shows a configuration after packaging of the contact mechanism device 100 according to the second embodiment.
In FIG. 4, a metal 118 a is formed from the metal piece 124 on the side surface of the glass package 114 and the side surface of the insulating substrate 104 by a method such as plating or vapor deposition, and connected to the ground electrode 118 b provided on the back surface of the insulating substrate 104.
With this configuration, since the electric charge charged in the glass package 114 can be released to the ground, the Coulomb force (repulsive force) between the glass package 114 and the beam portion 112 is prevented, and the beam portion 112 is not separated from the lower electrode 102. Malfunctions can be prevented.

Since the beam portion 112 and the lower electrode 102 are made of gold, when the metal piece 124 comes into contact with both the upper electrode 103 and the lower electrode 102, a current flows through both the upper electrode 103 and the lower electrode 102 and is short-circuited. Thus, the contact mechanism device 100 does not function as a switch.
Therefore, the lower electrode 102 and the base 111 of the upper electrode 103 are sealed with an insulating resin 115.

  As described above, according to the second embodiment, the Coulomb force is prevented in the same manner as in the first embodiment by connecting the metal piece 124 shaped like the glass package 114 to the ground electrode 118b. The malfunction prevention effect can be exhibited.

Embodiment 3 FIG.
FIG. 5 is a configuration diagram of the contact mechanism device 100 according to the third embodiment of the present invention. The same components as those in FIG.
In the third embodiment, a package for protecting the contact mechanism device 100 from the external environment is made of a metal material to form a metal package 125, and further, a method such as plating or vapor deposition is performed on the side surface of the metal package 125 and the side surface of the insulating substrate 104. A metal 118 a is formed and connected to a ground electrode 118 b provided on the back surface of the insulating substrate 104.
With this configuration, since the electric charge charged in the metal package 125 can be released to the ground, the Coulomb force can be prevented from being generated, and the malfunction that the beam 112 is not separated from the lower electrode 102 can be prevented.

Since the beam portion 112 and the lower electrode 102 are made of gold, when the metal package 125 is in contact with both the beam portion 112 and the lower electrode 102, a current flows through both the beam portion 112 and the lower electrode 102 and is short-circuited. Thus, the contact mechanism device 100 does not function as a switch.
Therefore, the beam 112 side and the lower electrode 102 side are sealed with an insulating resin 115.

  As described above, according to the third embodiment, the package is made of a metal material to form the metal package 125, and the metal package 125 is connected to the ground electrode 118b, whereby the gap between the beam portion 112 and the lower electrode 102 is obtained. By preventing the Coulomb force and preventing the malfunction that the beam portion 112 is not separated from the lower electrode 102, the effect of improving the switching voltage can be obtained.

2 is a structural diagram of a contact mechanism device 100 according to Embodiment 1. FIG. It is a figure explaining operation | movement of the contact mechanism device 100 which concerns on Embodiment 1. FIG. The structure before the package of the contact mechanism device 100 which concerns on Embodiment 2 is shown. The structure after the packaging of the contact mechanism device 100 which concerns on Embodiment 2 is shown. It is a block diagram of the contact mechanism device 100 which concerns on Embodiment 3. FIG. It is a structural diagram of a conventional contact mechanism device. A switching operation of a conventional contact mechanism device will be described. It is a figure which shows a mode that the electric charge has arisen in the glass package.

Explanation of symbols

  100 Contact mechanism device, 101 substrate, 102 lower electrode, 103 upper electrode, 104 insulating substrate, 105 copper foil, 106 conductive layer, 107 nickel layer, 108 sacrificial layer, 109 cantilever structure, 110 magnetic body, 111 base 112 beam part 113 counterbore 114 glass package 115 insulating resin 116 through hole 117 back electrode 117a permanent magnet 117b magnetic field 117c magnetic attraction 118 gold deposition 118a metal 118b ground electrode 120 power supply 121 magnet, 122 magnetic field, 123 magnetic attraction, 124 metal piece, 125 metal package, a plus charge, b plus charge, c Coulomb force.

Claims (3)

An element part composed of a contact part having a beam structure, and a package for sealing the element part;
A contact mechanism device comprising:
A contact mechanism device, wherein a metal vapor deposition portion is formed on an inner wall of the package, and a metal portion that enables the metal vapor deposition portion to be grounded is formed. An element part composed of a contact part having a beam structure, and a package for sealing the element part;
A contact mechanism device comprising:
A contact mechanism device characterized in that a metal piece having a shape similar to that of the package is formed on the inner side of the package, and a metal portion that enables ground connection of the metal piece is formed. An element part composed of a contact part having a beam structure, and a package for sealing the element part;
A contact mechanism device comprising:
The contact mechanism device, wherein the package is made of a metal material, and a metal portion is formed to allow the package to be grounded.

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