JP2008130735A - Manufacturing method of light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a light-emitting device formed of an upper/lower electrode type light-emitting diode having an upper electrode and a lower electrode. <P>SOLUTION: The light-emitting device is provided with a metal substrate where a plurality of electrode parts which are insulated and separated so that they confront each other are formed; a reflector bonded to the plurality of electrode parts; an upper/lower electrode type light-emitting diode with the lower electrode is bonded to one electrode part; a conductive connecting member bonding the upper electrode of the upper/lower electrode type light-emitting diode and the other electrode part; a transparent sealing material, with which the inner part of the reflector is filled; and a phosphor content film body installed at the tip part of the reflector. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a light-emitting device composed of upper and lower electrode type light-emitting diodes having an upper electrode and a lower electrode. In particular, the present invention is a light-emitting device using the upper and lower electrode type light-emitting diodes, which can pass a large current, radiates heat generated at that time, or expands or contracts due to thermal stress of the conductive connection member due to the heat. The present invention relates to a method for manufacturing a light emitting device in consideration of the above.

  FIG. 6A is a schematic sectional view for explaining a light emitting diode assembly in a conventional example, and FIG. 6B is a plan view for explaining the light emitting diode assembly in the conventional example. 6A and 6B, the light-emitting diode assembly 60 surrounds a printed wiring board 61, a submount board 62 provided on the printed wiring board 61, and the periphery of the submount board 62. A plastic cylinder 63, an upper and lower electrode type light emitting diode 65, and a transparent sealing resin 66 covering the upper and lower electrode type light emitting diode 65 are formed.

  The plastic cylinder 63 is integrally formed with the lead frame 64 by using, for example, a thermosetting resin mainly composed of an epoxy resin. On the printed wiring board 61, a printed wiring 611 for connecting to a control circuit (not shown) for blinking the upper and lower electrode type light emitting diodes 65 is formed in a desired pattern by etching or the like. A pair of wirings 622 is formed on the upper surface of the submount substrate 62 by, for example, forming an evaporation pattern using etching or a mask.

  In the plastic cylinder 63, the lead frame 64 penetrates the inside (embedded portion 641). The plastic cylinder 63 reflects light emitted from the upper and lower electrode type light emitting diodes 65 from the inner periphery. Further, the plastic cylinder 63 is integrally manufactured by so-called insert or outsert molding (injection molding) in which the lead frame 64 is embedded in the injection molding.

  The upper and lower electrode type light emitting diode 65 includes two electrodes 623 in the lower part, cut out by dicing from the submount substrate 62 made of a semiconductor wafer, and the electrodes are connected to the wiring 622 of the submount substrate 62. The transparent sealing resin 66 has heat resistance, is filled in the plastic cylindrical body 63, and forms a flat or convex lens.

In the light emitting diode package described in Japanese Patent Laid-Open No. 2001-244508, the lower electrode of the upper and lower electrode type light emitting diode is attached to one side of a metal substrate, and the upper electrode of the upper and lower electrode type light emitting diode is insulated with the other by a bonding wire. Connected to the metal substrate. Some conventional light emitting diode packages have a resin inserted in an insulating portion of a metal core. For example, the manufacturing method of the said package for light emitting diodes is described in Unexamined-Japanese-Patent No. 2005-116579. Further, in the conventional surface mount type light emitting diode, the metal core substrate is divided by an insulating adhesive and the submount substrate is mounted. For example, Japanese Unexamined Patent Publication No. 2003-303999 discloses the surface-mount light emitting diode.
JP 2001-244508 A JP 2005-116579 A JP 2003-303999 A

  The sub-mount type flip-chip type light emitting diode has an advantage that all the emitted light is irradiated to the outside because there is no electrode on the upper part. However, in recent years, upper and lower electrode type light emitting diodes have been developed having performances superior to the above-described flip chip type light emitting diodes. The upper and lower electrode type light emitting diode can flow a large amount of current and can improve the illuminance, but the submount type structure has poor heat conduction, and the heat of the flip chip type light emitting diode is hardly dissipated. However, the package tends to be hot, and there are drawbacks such as disconnection of wiring when used for years. Further, the submount type has a problem that productivity for mass production is poor.

  The upper and lower electrode type light emitting diodes are large, have high luminous efficiency, and have high illuminance. However, when the upper and lower electrode type light emitting diodes are used for illumination, the upper electrode is wired with a gold wire, and if a large amount of current is passed, the wiring is disconnected due to heat stress due to heat generation, or the upper electrode and the gold wire are not connected. There is a problem that the upper and lower electrode type light emitting diodes are burned due to the connection resistance between them. Moreover, the light emitting diode attached to the metal board | substrate provided with the slit is sealed with transparent resin, and the thing with high hardness is used in order to give intensity | strength with the said transparent resin. However, the sealing material having a high hardness has a problem that the thermal stress generated from the light emitting diode is large. The thermal stress may break the wiring that supplies power to the light emitting diode.

  In order to solve the above-described problems, the present invention provides a method of manufacturing a light emitting device in which a metal substrate is separated and an electrode portion of an upper and lower electrode type light emitting diode and a metal plate member are joined to the electrode portion by eutectic solder. The purpose is to provide. An object of the present invention is to provide a method for manufacturing a light-emitting device that is excellent in mass productivity, withstands large currents and thermal stresses, and is maintained at high strength.

(First invention)
The method for manufacturing a light emitting device according to the first invention comprises a step of forming a plurality of separated electrode parts, a step of bonding a reflector to the plurality of electrode parts, Eutectic solder between the lower electrode of the electrode type light emitting diode, between the other electrode portion and the metal plate member, and between the upper electrode of the upper and lower electrode type light emitting diode and the arm portion of the metal plate member. The step of bonding in step, the step of providing a phosphor-containing film body at the tip of the reflector, the upper and lower electrode type light emitting diodes are sealed, and the reflector from the back side of the metal substrate through the separation portion And at least a step of filling a transparent sealing material into the inside.

(Second invention)
The method for manufacturing a light emitting device according to the second invention is characterized in that the transparent sealing material of the first invention is an elastomer having a Shore A (rubber hardness) of 15 to 85, preferably 20 to 80.

(Third invention)
The method for manufacturing a light emitting device according to a third aspect is characterized in that the transparent sealing material according to the first aspect or the second aspect is an elastomer made of a one-component or two-component thermosetting silicone resin.

(Third invention)
The method for manufacturing a light emitting device according to a third aspect is characterized in that the reflector filled with the transparent sealing material according to the first to third aspects is in a reduced pressure state by suction.

(Fourth invention)
According to a fourth aspect of the present invention, there is provided a method of manufacturing a light emitting device, wherein the metal substrate according to the first to fourth aspects is formed with a plurality of package units, and a slit for forming a plurality of electrode portions separated into the package units is formed. It has the process.

  According to the present invention, a plurality of electrode portions formed by separating a metal substrate, an upper electrode of an upper and lower electrode type light emitting diode, and the other electrode portion provided on the metal substrate are combined with a metal plate such as a metal plate. Since they are connected to each other by a member, not only can a large current flow therethrough, but they are excellent in heat dissipation and can be relieved even if thermal stress occurs.

  According to the present invention, by changing the shape of the metal plate member that connects the upper electrode of the upper and lower electrode type light emitting diode and the metal substrate, the luminous efficiency of the upper and lower electrode type light emitting diode is improved, or the heat due to thermal expansion is increased. Stress can be relaxed.

  According to the present invention, although the metal substrate is separated, the strength as a package can be sufficiently maintained by attaching the reflector. Further, by giving elasticity to the transparent sealing material filled in the slit and the reflector, it is possible to relieve the thermal stress generated when a large current flows.

  According to the present invention, in particular, the upper and lower electrode type light emitting diode package in which the inside of the reflector is filled with an elastomeric transparent sealing material is attached to the upper and lower electrode type light emitting diode, The elastomeric transparent sealing material filled in the reflector can sufficiently absorb thermal stress. In addition, according to the present invention, it is possible to attach the light emitting diode in a package assembly state and seal the transparent sealing material, so that productivity is improved.

(First invention)
The manufacturing method of the light emitting device according to the first invention comprises a step of forming a plurality of separated electrode parts, a step of bonding the plurality of electrode parts and the reflector with a synthetic resin adhesive, Between one of the electrode portions and the lower electrode of the upper and lower electrode type light emitting diode, between the upper electrode of the upper and lower electrode type light emitting diode and the metal plate member having an opening, and the upper electrode of the upper and lower electrode type light emitting diode, A step of joining each of the metal plate members with eutectic solder, a step of providing a phosphor-containing film body at the tip of the reflector, sealing the upper and lower electrode type light emitting diodes, and And a step of filling the inside with a transparent sealing material from the back side of the metal substrate through the separation part.

  In the step of forming the plurality of electrode portions, for example, pressing is performed so as to correspond to a position where the upper and lower electrode type light emitting diodes are attached. Further, in the step of forming the electrode portion, the shape of the electrode portion can be a linear shape, a curved shape, a cross shape, a T shape, an H shape, or the like.

  For example, the metal substrate itself or a gold and / or silver plating layer of a predetermined size is formed on the plurality of opposing electrode portions formed by separating the metal substrate. A synthetic resin adhesive is used for the step of joining the reflector to the electrode portion. The step of joining the electrode portion, the conductive connecting member, and the upper and lower electrodes of the upper and lower electrode type light emitting diode can be performed at once by placing eutectic solder on a predetermined portion and applying heat. A desired phosphor-containing film body is attached to the tip of the reflector. Thereafter, the transparent sealing material is filled into the reflector from the separation part on the back side of the metal substrate, and the upper and lower electrode type light emitting diodes are sealed.

(Second invention)
The light emitting device manufacturing method according to the second aspect of the invention comprises dividing the package by setting the hardness of the transparent sealing material according to the seventh aspect to an elastomer of Shore A (rubber hardness) of 15 to 85, preferably 20 to 80. It became easier to fill before or after. Further, the transparent sealing material having the above hardness has an appropriate hardness to absorb the heat stress generated when a large current is passed from one to the other electrode portion.

(Third invention)
In the method for manufacturing a light emitting device in the third invention, the transparent sealing material in the first invention or the second invention can be an elastomer type made of a one-component or two-component thermosetting silicone resin. Since the elastomer-type transparent sealing material has an appropriate hardness, even when a large current is passed through the upper and lower electrode type light emitting diodes, the stress caused by the generated heat can be relieved.

(Fourth invention)
According to a fourth aspect of the present invention, there is provided a method for manufacturing a light emitting device, wherein when the transparent sealing material according to the first to third inventions is sealed to the reflector, the inside of the reflector is in a reduced pressure state, and the transparent sealing material Inconvenience of light reflection is prevented by preventing bubbles and the like from being generated inside.

(Fifth invention)
The method for manufacturing a light emitting device according to the fifth aspect of the invention is formed so as to be divided into a large number of package units on one metal substrate. The metal substrate of the package unit is separated by forming a slit, and a plurality of electrode portions are formed.

  Next, the light emitting device of the present invention will be described. The plurality of electrode portions and the metal plate member are formed with gold and / or silver plating as required. The reflector is attached to a plurality of electrodes and has a substantially cylindrical shape that extends upward to reflect light from the upper and lower electrode type light emitting diodes. In addition, the reflector is made of, for example, a member of alumina, a composite ceramic of alumina and glass, or the like, and an epoxy resin, a polyimide resin, a glass, a brazing material so as to correspond to the respective electrode portions. Bonded to the electrode part by a system adhesive. The reflector has a shape such as a square, a circle, an ellipse, or a rectangle. The reflector is filled with a transparent sealing material while the upper and lower electrode type light emitting diodes are sealed inside.

  The electrode portion may be filled with an insulating material between slits dividing the metal substrate. The metal substrate is formed with gold and / or silver-plated electrode portions, so that the electrical connection between the lower electrode of the upper and lower electrode type light emitting diode and the conductive connection member can be improved. Further, a silver and / or gold film is formed on the metal substrate other than the upper and lower electrode type light emitting diodes so that the light emitted from the upper and lower electrode type light emitting diodes is effectively radiated to the outside together with the reflector. Is formed.

  The present invention uses, for example, a metal plate member when connecting the upper electrode and the other electrode portion of the upper and lower electrode type light emitting diodes, so that it is compared with one or two gold wires. In addition, not only can a large current (eg, 350 mA or more) flow, but heat can also be radiated from the metal plate member itself. In addition, the electrode portion including the metal plate member and the metal substrate on which the upper and lower electrode type light emitting diodes are mounted has the three functions of a conductor that reflects light, dissipates the upper and lower electrode type light emitting diodes, and conducts a large current. To fulfill.

  Since the metal plate member has a very large cross-sectional area and surface area compared to a gold wire, the electrical resistance of this portion is small and heat generation is also small. The gold and / or silver plating formed on the metal substrate can use eutectic solder for reflection of light generated from the upper and lower electrode type light emitting diodes and connection to the electrodes. The metal substrate includes copper or a copper alloy, aluminum or an aluminum alloy.

  The metal plate member is formed so as to have an arm portion curved in a substantially horizontal direction or a substantially vertical direction, so that the curved metal plate member does not interfere with light emitted from the side portion of the upper and lower electrode type light emitting diodes. And / or a shape that can absorb the difference in thermal stress between the opposing electrode portions. Since the metal plate member has a large surface area, it does not affect the electric resistance of the flowing current even if the length is somewhat longer.

  The metal substrate is formed in a recess in which one electrode portion is formed on the one metal substrate so that the upper and lower electrode type light emitting diode does not have a step between the upper electrode and the other electrode portion formed on the metal substrate. Is provided. By making the concave portion the same as the thickness of the upper and lower electrode type light emitting diode, the step can be completely eliminated when wiring is performed. Furthermore, since the metal plate member does not have the step, it is possible to perform the shortest distance wiring and reduce the electrical resistance.

  The metal substrate has a convex portion connected to the metal plate member formed on the other electrode portion so as to have the same height as the upper electrode of the upper and lower electrode type light emitting diode. Since the upper electrode of the upper and lower electrode type light emitting diode and the electrode portion including the other metal substrate substrate have the same height, the metal plate member can easily connect both electrodes at the shortest distance. In the case of a metal substrate, the concave portion or the convex portion is formed by pressing or the like.

  1 (a) to 1 (c) show a first embodiment of the present invention, (a) is a state diagram in which upper and lower electrode type light emitting diodes are attached to a package, (b) is an enlarged view of (a), and (c). FIG. 2 is a plan view of a package and upper and lower electrode type light emitting diodes. 1 (a) to 1 (c), the light emitting device according to this embodiment includes metal substrates 12, 14, a slit or insulating member 13 provided between the metal substrates 12, 14, and an upper and lower electrode type. A light-emitting diode 11, a conductive connection member (metal plate member) 15 that connects the metal substrate 14 and the upper electrode 111 of the upper and lower electrode type light-emitting diodes 11, and the metal substrates 12 and 14 are attached. The reflector 16 is formed at least and a transparent sealing material (not shown) filled in the reflector 16. The reflector 16 is formed of a substantially cylindrical body having a reflective portion inclined so as to spread toward the upper part. The metal substrates 12 and 14 can be plated with gold after the surface of the metal substrates 12 and 14 is silver-plated by adding a small amount of zinc to copper, for example, and the surface is silver-plated. The metal substrates 12 and 14 and the reflector 16 can be circular, square, rectangular, elliptical or the like.

  The insulating member 13 can be filled with, for example, a ceramic material, a thermosetting resin whose main component is a one-component or two-component epoxy resin, or a resin made of a silicon resin. It can have insulating properties. Since the cylindrical reflector 16 spreading toward the top is bonded to the metal substrates 12 and 14 with an adhesive, it can maintain high strength as a package. The reflector 16 is filled with a transparent sealing material. The transparent sealing material can be of an elastomer type. The elastomer type resin preferably has a Shore A (rubber hardness) of 15 to 85, preferably 20 to 80. Furthermore, it is desirable that the insulating member 13 is an elastomer made of a silicon resin.

  The metal substrate 12 is electrically separated from the metal substrate 14 by a slit or an insulating member 13. The metal substrates 12 and 14 and the conductive connection member 15 can be made of copper or copper alloy, aluminum or aluminum alloy, iron or iron alloy. The reflector 16 is made of, for example, a composite ceramic of alumina, alumina and glass, and bonded to the metal substrates 12 and 14 with an epoxy resin, polyimide resin, glass, or brazing adhesive. Yes. Moreover, the reflector 16 can be made of synthetic resin and coated with a film of gold, silver, aluminum, or the like, in addition to the above-described members.

  The metal substrate 12 is formed with a storage recess 121 in which the upper and lower electrode type light emitting diodes 11 can be stored. The upper and lower electrode type light emitting diode 11 is provided with an upper electrode 111 and a lower electrode 112. An electrode portion (not shown in FIG. 1) is formed on the metal substrates 12 and 14 by gold plating or the like in advance using a mask as necessary.

  An electrode portion formed on one side of the metal substrate 12 is joined to the lower electrode 112 of the upper and lower electrode type light emitting diode 11 by eutectic solder, for example. The upper electrode 111 of the upper and lower electrode type light emitting diode 11 is connected to the electrode portion formed on the metal substrate 14 by the conductive connection member 15 by eutectic solder, for example. On the surfaces of the metal substrates 12 and 14 where the upper and lower electrode type light emitting diodes 11 and the conductive connection members 15 are not present, silver plating 162 and 163 are applied to regions corresponding to the inside of the reflector 16 described later, The light emitted from the electrode type light emitting diode 11 is efficiently reflected.

  In FIG. 1C, the upper electrode 111 of the upper and lower electrode type light emitting diode 11 has an opening 113 in a square shape, and light is efficiently emitted from this portion. The opening 113 can be variously modified in addition to the character shape, such as a Japanese character shape, a square shape, and a U shape. The conductive connecting member 15 has, for example, two connecting portions 151 and is connected to a part of the upper electrode 111 of the upper and lower electrode type light emitting diode 11. The conductive connecting member 15 has a wide area on the metal substrate 14 side, and is connected to an electrode portion formed on the metal substrate 14. The conductive connection member 15 is connected to the upper electrode 111 and the metal substrate 14 by eutectic solder, for example. In the connection using the eutectic solder, the bonding strength can be increased by applying gold plating to each other.

  FIG. 2 (a) is a second embodiment of the present invention, and is a cross-sectional view for explaining another example in which upper and lower electrode type light emitting diodes are mounted on a metal substrate. (B) and (c) are diagrams of the present invention. It is a figure for demonstrating a package assembly. In FIG. 2A, the metal substrate 22 is not provided with a storage recess for storing the upper and lower electrode type light emitting diodes 11. Instead of the storage recess, the metal substrate 14 is formed with a protrusion 141 and a recess 141 ′ at the same time by, for example, pressing. The conductive connecting member 25 made of a single substantially horizontal plate member joins the upper electrode 111 of the upper and lower electrode type light emitting diode 11 and the other electrode portion by eutectic solder. The conductive connection member 25 is plated with gold and / or silver to improve the bonding strength of eutectic solder, and light emitted from the upper and lower electrode type light emitting diodes 11 through a reflector or the like. It can radiate in a desired direction.

  In FIG. 2B, the conductive connecting member 251 has a plate-like member formed in an approximately L shape, and the upper electrode 111 of the upper and lower electrode type light emitting diode 11 and the other electrode portion formed on the metal substrate 14. (Not shown). In FIG. 2C, the conductive connection member 252 is made of a single plate member, and includes the upper electrode 111 of the upper and lower electrode type light emitting diode and the other electrode portion (not shown) formed on the metal substrate 14. It is bent to absorb the step. The shape of the conductive connecting member can be bent not only to absorb a step but also to absorb a thermal stress. Since the size of the upper and lower electrode type light emitting diode 11 is about 1.0 mm × 1.0 mm and the thickness is about 0.1 mm, the housing recess for accommodating the upper and lower electrode type light emitting diode 11 or the conductive connecting member. It is easy to process any of the 25 shapes.

  FIGS. 3A to 3C are views for explaining a state in which two rows of package assemblies are formed on a strip-shaped or strip-shaped metal substrate according to a third embodiment of the present invention. 3A to 3C, the strip-shaped or strip-shaped metal substrate 31 includes, for example, internal slits 312 in one or two rows, electrode portions 313 and 314 that are insulated from each other, and one of the electrode portions. A reflector 16 is provided so that 313 is at the center. The internal slit 312 is previously filled with, for example, a space or an insulating resin. The insulating resin is preferably highly elastic and adhesive like an epoxy resin. When the internal slit 312 has a cross shape, two upper and lower electrode light emitting diodes (not shown) are arranged in parallel, and can be used for a light emitting device with high illuminance.

  The length of the internal slit 312 is longer than the width of at least one of the reflectors 16 and is disposed so that a part of the internal slit 312 protrudes. The metal substrate 31 to which the reflector 16 is attached is shipped as a single package or a package assembly, to which upper and lower electrode light emitting diodes are connected, and inside the reflector 16 is filled with a transparent sealing material. A single package or a package assembly can be formed.

  3A to 3C, the metal substrate 31 is formed with peripheral slits 311-1, 311-2, 311-3, 311-4 surrounding the package unit. In the enlarged view of FIG. 3 (b), the four peripheral slits 311-1, 311-2, 311-3, 311-4 do not drop from the metal substrate 31 due to the fragile portion 315. It is linked to. And the said package unit can be isolate | separated in the part enclosed by the surrounding slits 311-1, 311-2, 311-3, 311-4 with a slight pressing force after completion. In addition, a package assembly having a plurality of upper and lower electrode type light emitting diodes can be previously placed around the plurality of packages with the surrounding slits provided.

  The metal substrate may be separated either after the reflector 16 is attached or after the upper and lower electrode type light emitting diodes and the like and the transparent sealing material are filled. The peripheral slit is not limited to one slit on one side. For example, the peripheral slit can be composed of a dot-like slit, a plurality of slits, or similar concave portions. In short, the peripheral slits are not limited to individual shapes as long as they can be separated with a slight pressing force.

  4 (a) and 4 (b) are diagrams for explaining a method of filling a slit or reflector with an insulating material in a fourth embodiment of the present invention. 4A and 4B, the reflector 16 is bonded to the metal substrates 12 and 14, and electrode portions (not shown), the upper and lower electrode type light emitting diodes 11, the conductive connection member 15 and the like are attached. Thereafter, the phosphor-containing film 45 is attached to the tip portion of the reflector 16. The transparent sealing material 46 filling the reflector 16 is filled into the reflector 16 through the slits 13 of the metal substrates 12 and 14. The slit 13 may be filled with a different insulating resin 41 other than the transparent sealing resin 46.

  FIG. 5 is a flowchart for explaining a method for manufacturing a light emitting device according to the present invention. In FIG. 5, the strip-shaped or strip-shaped metal substrate moves so as to be continuously processed on a base (not shown) (steps 511 and 512). In the metal substrate, internal slits and divisional peripheral slits that are insulated from each other are formed in one or a plurality of rows so as to correspond to positions where the upper and lower electrode type light emitting diodes are attached (step 513). Electrode portions are formed on both sides of the internal slit by gold and / or silver plating (step 514). The gold and / or silver plating is formed not only on the electrode portion but also on the entire inner surface of the reflector (excluding the slit portion) in consideration of the reflection of the upper and lower electrode type light emitting diodes.

  The reflector is bonded to the metal substrate such that one of the electrode portions formed on the metal substrate is centered (step 515). The upper and lower electrode type light emitting diodes are placed on one electrode part via eutectic solder, and the upper and other electrode parts of the upper and lower electrode type light emitting diodes are electrically conductive via eutectic solder. A connecting member is placed (step 516). In this state, the metal substrate is subjected to a heat treatment by passing it through a reflow furnace (step 517).

  Thereafter, a fluorescent-containing film body is attached to the tip of the reflector. (Step 518). The metal substrate to which the upper and lower electrode type light emitting diodes are attached is placed in a reduced pressure tank or in a reduced pressure state as necessary (step 519). The transparent sealing material is filled into the reflector through the slit (step 520). The reduced pressure inside the reflector can prevent bubbles from entering the transparent sealing material, and can improve the quality of the light emitting device. Next, the metal substrate can be divided into package units without using a special machine, for example, by applying a slight pressing force to the back surface (step 521). The light emitting device manufacturing method is composed of a line mainly composed of a press and an electronic component mounting robot, and each of the light emitting devices is manufactured and a light emitting device composed of an assembly of packages is manufactured. be able to.

  The light emitting device manufactured by the above method can be used for a light guide plate of a liquid crystal display device or a backlight of an advertisement display device, for example, by having a size of about 3 mm in length and about 20 mm in width. In addition, the light emitting device can supply power of a rated current of 350 mA or more to the upper and lower electrode type light emitting diodes, and the luminance can be made higher than that of the conventional device.

  As mentioned above, although the Example of this invention was explained in full detail, this invention is not limited to the said Example. The present invention can be modified in various ways without departing from the scope of the claims. The connection of the upper and lower electrodes of the upper and lower electrode type light emitting diode of the present invention, the metal substrate, the conductive connecting member, etc. is known or eutectic solder, eutectic solder paste, eutectic solder and flux, gold-tin eutectic solder paste, etc. A well-known thing can be used. As the reflector member and the reflective film of the present invention, known or well-known members can be used as described above.

(A) to (C) are the first embodiment of the present invention, (A) is a state diagram in which upper and lower electrode type light emitting diodes are attached to the package, (B) is an enlarged view of (A), and (C) is a package. It is a top view of a vertical electrode type light emitting diode. Example 1 (A) is a second embodiment of the present invention, and is a cross-sectional view for explaining another example in which upper and lower electrode type light emitting diodes are mounted on a metal substrate. (B) and (C) are package assemblies according to the present invention. It is a figure for demonstrating a body. (Example 2) (A) to (c) are diagrams for explaining a state in which two rows of package assemblies are formed on a strip-shaped or strip-shaped metal substrate in the third embodiment of the present invention. (Example 3) (A) and (B) are diagrams for explaining a method of filling a slit or a reflector with an insulating material in a fourth embodiment of the present invention. Example 4 It is a flowchart figure for demonstrating the manufacturing method of the light-emitting device in this invention. (A) is a schematic sectional drawing for demonstrating the light emitting diode assembly in a prior art example, (b) is a top view for demonstrating the light emitting diode assembly in the said prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Vertical electrode type light emitting diode 111 ... Upper electrode 112 ... Lower electrode 113 ... Opening part 12, 14 ... Metal substrate 121 ... Storage recessed part 13 ... Insulating member 114 ...・ Side parts 15, 25, 251, 252... Conductive connection member 151... Connection part 161 .. reflective film (reflection part)
162, 163 ... Silver plating 311-1, 311-2, 311-3, 311-4 ... Peripheral slit 312 ... Internal slit 313, 314 ... Electrode part 315 ... Fragile part 41- ..Insulating materials

Claims (5)

A step of forming a plurality of separated electrode parts made of a metal substrate,
Bonding the plurality of electrode portions and the reflector;
Between one of the electrode portions and the lower electrode of the upper and lower electrode type light emitting diode, between the other electrode portion and the metal plate member, and between the upper electrode of the upper and lower electrode type light emitting diode and the arm portion of the metal plate member And a step of joining each with eutectic solder,
Providing a phosphor-containing film body at the tip of the reflector;
Sealing the upper and lower electrode type light emitting diodes, filling the inside of the reflector with a transparent sealing material from the back side of the metal substrate through the separation part;
A method of manufacturing a light emitting device, comprising:   The method of manufacturing a light-emitting device according to claim 1, wherein the hardness of the transparent sealing material is an elastomer of Shore A (rubber hardness) of 15 to 85, preferably 20 to 80.   The method for manufacturing a light-emitting device according to claim 1, wherein the transparent sealing material is an elastomer made of a one-component or two-component thermosetting silicone resin.   4. The method for manufacturing a light emitting device according to claim 1, wherein the reflector filled with the transparent sealing material is in a reduced pressure state by suction. 5.   The metal substrate is formed with a plurality of package units, and includes a step of forming a slit so as to form a plurality of electrode portions separated into each package unit.

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