JP2008166376A - Method and system for processing substrate and manufacturing method for device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for processing a substrate inhibiting the generation of particles and the infiltration of a liquid and being capable of excellently processing a substrate in a substrate processing process containing liquid immersion exposure processing. <P>SOLUTION: The method for processing the substrate contains formation of a liquid repulsive photosensitive film to the liquid on the substrate, substrate irradiation in the peripheral region with a first exposure light and peripheral exposure processing exposing the photosensitive film formed on the substrate. The method further contains the irradiation of a region not irradiated with the first exposure light on the inside of the peripheral region of the substrate with a second exposure light through the liquid while bringing the photosensitive film formed on the substrate and the liquid into contact and liquid-immersion exposure processing exposing the photosensitive film formed on the substrate. The method further contains the development of the photosensitive film formed on the substrate after completing both the peripheral exposure processing and liquid-immersion exposure processing and the removal of the photosensitive film on the substrate irradiated with the first exposure light and the second exposure light. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing method, a substrate processing system, and a device manufacturing method including a process of exposing a substrate through a liquid.

As one of the methods for forming a device pattern, a photolithography technique has been conventionally used. The photolithography process includes, for example, a process of forming a photosensitive film on a substrate such as a semiconductor wafer, a process of exposing the photosensitive film on the substrate, and a process of developing the exposed substrate. As a technique for forming a photosensitive film on a substrate, for example, a spin coating method as disclosed in Patent Documents 1 and 2 below is known. As a technique for exposing a photosensitive film on a substrate, an immersion exposure method for exposing a photosensitive film on a substrate through a liquid as disclosed in Patent Document 3 below is known.
JP-A-9-213605 JP 2006-93409 A International Publication No. 99/49504 Pamphlet

  For example, when a photosensitive film is formed by spin coating, the photosensitive film is also formed on the peripheral edge of the substrate. When the photosensitive film on the peripheral edge of the substrate comes into contact with a member that holds the substrate such as a substrate transport device, the photosensitive film may be peeled off from the substrate, generating particles. Therefore, conventionally, an edge rinse process for removing the photosensitive film on the peripheral edge of the substrate has been performed. However, depending on the state of the peripheral edge of the substrate, the liquid may easily enter from the gap formed around the substrate during the immersion exposure process, and the lower surface of the substrate, the member holding the substrate, etc. may get wet. is there. In addition, if liquid adheres to the lower surface of the substrate, various problems may occur such as liquid adhering to the transfer device that holds the lower surface of the substrate, or liquid splashing on the transfer path, and the substrate can be processed satisfactorily. There is a possibility of disappearing.

  The present invention has been made in view of such circumstances, and in a substrate processing process including an immersion exposure process, in the immersion exposure process, liquid intrusion from a gap formed around the substrate is suppressed. An object of the present invention is to provide a substrate processing method capable of processing a substrate satisfactorily. Also provided are a substrate processing system capable of satisfactorily processing a substrate by suppressing liquid intrusion from a gap formed around the substrate in immersion exposure processing, and a device manufacturing method using the substrate processing system. With the goal.

  In order to solve the above-described problems, the present invention employs the following configurations corresponding to the respective drawings shown in the embodiments. However, the reference numerals with parentheses attached to each element are merely examples of the element and do not limit each element.

  According to a first aspect of the present invention, there is provided a substrate processing method including an immersion exposure process for exposing a photosensitive film (Rg) on a substrate (W) through a liquid (LQ), wherein the liquid (LQ) On the other hand, a liquid-repellent photosensitive film (Rg) is formed on the substrate (W), and the peripheral area of the substrate (W) is irradiated with the first exposure light (EL1) to be formed on the substrate (W). The peripheral edge of the substrate (W) while performing the peripheral edge exposure processing for exposing the formed photosensitive film (Rg) and bringing the photosensitive film (Rg) formed on the substrate (W) into contact with the liquid (LQ). A photosensitive film (Rg) formed on the substrate (W) by irradiating the second exposure light (EL2) through the liquid (LQ) to a region inside the region where the first exposure light (EL1) is not irradiated. ) On the substrate (W) after performing the immersion exposure process and exposing both the peripheral edge exposure process and the immersion exposure process. Developing the formed photosensitive film (Rg), and removing the photosensitive film (Rg) on the substrate (W) irradiated with the first exposure light (EL1) and the second exposure light (EL2). A substrate processing method is provided.

  According to the first aspect of the present invention, since the immersion exposure process is performed in a state where the liquid-repellent photosensitive film is formed in the peripheral region of the substrate, the liquid from the gap formed around the substrate is removed. Infiltration can be suppressed and the substrate can be processed satisfactorily. In addition, since the liquid-repellent photosensitive film is removed from the peripheral area of the substrate after the development processing of the substrate, particles are generated when the photosensitive film is peeled off from the peripheral area of the substrate in the subsequent processing of the substrate. Can also be prevented.

  According to the second aspect of the present invention, there is provided a substrate processing system that performs a process of exposing the photosensitive film (Rg) on the substrate (W) through the liquid (LQ), and is repellent to the liquid (LQ). A first processing apparatus (1) that forms a liquid photosensitive film (Rg) on a substrate (W), and a peripheral area of the substrate (W) is irradiated with a first exposure light (EL1) to form a substrate (W). The second processing apparatus (13) that performs peripheral edge exposure processing for exposing the photosensitive film (Rg) formed thereon, and the photosensitive film (Rg) formed on the substrate (W) and the liquid (LQ) are brought into contact with each other. Then, the second exposure light (EL2) is irradiated via the liquid (LQ) to the area inside the peripheral area of the substrate (W) where the first exposure light (EL1) is not irradiated, and the substrate (W ) The third processing apparatus (EX) that exposes the photosensitive film (Rg) formed thereon, and both the peripheral exposure process and the immersion exposure process are completed. Then, the photosensitive film (Rg) formed on the substrate (W) is developed, and the photosensitive film (Rg) on the substrate (W) irradiated with the first exposure light (EL1) and the second exposure light (EL2). A substrate processing system (SYS) including a fourth processing device (37) for removing the first processing device (37).

  According to the second aspect of the present invention, since the liquid immersion exposure process is performed in a state where the liquid repellent photosensitive film is formed in the peripheral region of the substrate, the liquid from the gap formed around the substrate is removed. Infiltration can be suppressed and the substrate can be processed satisfactorily. In addition, since the liquid-repellent photosensitive film is removed from the peripheral area of the substrate after the development processing of the substrate, particles are generated when the photosensitive film is peeled off from the peripheral area of the substrate in the subsequent processing of the substrate. Can also be prevented.

  According to the third aspect of the present invention, there is provided a device manufacturing method using the substrate processing system (SYS) of the above aspect.

  According to the third aspect of the present invention, a device having desired performance can be manufactured using a substrate processing system that can process a substrate satisfactorily.

  ADVANTAGE OF THE INVENTION According to this invention, the board | substrate for manufacturing a device can be processed favorably, and the device which has desired performance can be manufactured.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The predetermined direction in the horizontal plane is the X-axis direction, the direction orthogonal to the X-axis direction in the horizontal plane is the Y-axis direction, and the direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, the vertical direction) is the Z-axis direction. To do. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively.

  FIG. 1 is a flowchart showing an example of a substrate processing method according to the present embodiment, and FIGS. 2 to 6 are schematic views showing the state of the substrate in each of steps SA1 to SA5 in FIG. Moreover, each of FIG. 2 (B)-FIG. 6 (B) is the figure which expanded the vicinity of the peripheral part of the board | substrate P shown to FIG. 2 (A)-FIG. 6 (A).

  The substrate is a substrate on which a predetermined process is performed to form a device (device pattern), and includes a base material such as a semiconductor wafer and a predetermined material layer formed on the base material. In the following description, among the material layers formed on the surface (upper surface, side surface, and lower surface) of the base material, the surface (exposed surface) of the most surface layer is appropriately defined as the surface of the substrate (upper surface, side surface, and lower surface). To tell. In the present embodiment, a case where the substrate P includes a circular base material W such as a semiconductor wafer and a photosensitive film Rg formed on the base material W will be described as an example.

  The substrate processing method of this embodiment includes an immersion exposure process in which the photosensitive film Rg of the substrate P is exposed via the liquid LQ. As shown in FIG. 1, the substrate processing method includes a step (SA1) of performing a film forming process for forming a liquid repellent photosensitive film Rg on the substrate W with respect to the liquid LQ, and a photosensitive film Rg on the substrate P. A step (SA2) of performing a film removal process for removing a part of the substrate, and a step of performing a peripheral exposure process for exposing the photosensitive film Rg of the substrate P by irradiating the peripheral region of the substrate P with the first exposure light EL1. (SA3) and the photosensitive film Rg of the substrate P and the liquid LQ are brought into contact with each other, and the second exposure light is passed through the liquid LQ to the region inside the peripheral region of the substrate P where the first exposure light EL1 is not irradiated. It includes a step (SA4) of performing an immersion exposure process for irradiating EL2 and exposing the photosensitive film Rg of the substrate P, and a step (SA5) for performing a development process for developing the substrate P subjected to the immersion exposure process. .

  In the present embodiment, water (pure water) is used as the liquid LQ used in the immersion exposure processing SA4. In the present embodiment, the film removal process SA2 is executed before the immersion exposure process SA4. The development process SA5 is performed after both the edge exposure process SA3 and the liquid immersion exposure process SA4 are completed. The development process SA5 includes a process of removing the photosensitive film Rg of the substrate P irradiated with the first exposure light EL1 and the second exposure light EL2. In the present embodiment, the edge exposure process SA3 is executed before the immersion exposure process SA4. Hereinafter, each process SA1-SA5 is demonstrated.

(Film formation treatment SA1)
First, the film formation process SA1 will be described. The film forming process SA1 includes a process of forming the photosensitive film Rg on the base material W of the substrate P. In the present embodiment, the base material W includes a semiconductor wafer, and the surface of the base material W includes the surface of a silicon substrate. The photosensitive film Rg is a film of a photosensitive material (photoresist). In the present embodiment, a chemically amplified resist having liquid repellency (water repellency) with respect to the liquid (water) LQ is used as the photosensitive film Rg. Further, the photosensitive film Rg of this embodiment is formed of a positive resist in which a portion irradiated with exposure light (including first exposure light and second exposure light) is removed by development processing. For example, the contact angle between the photosensitive film Rg and the liquid LQ is 70 ° or more, preferably 90 ° or more.

  In the present embodiment, the film formation process SA1 uses a spin coating method. As shown in FIG. 2, a photosensitive film Rg is formed on the substrate W based on a spin coating method. The photosensitive film Rg is formed on a part of the upper surface, side surface, and lower surface of the substrate W.

(Film removal treatment SA2)
Next, the film removal process SA2 will be described. The film removal process SA2 is executed after the film formation process SA1 is completed. The film removal process SA2 includes a process of removing a part of the photosensitive film Rg formed on the substrate W. In the present embodiment, in the film removal process SA2, the photosensitive film Rg formed on the lower surface of the substrate W and the photosensitive film Rg below the side surface of the substrate W are removed. The film removal process SA2 includes a rinse process in which a solvent containing acetone or thinner is sprayed from the lower surface side of the substrate P toward the peripheral edge of the substrate P, so-called back rinse process. Thereby, as shown in FIG. 3, the upper surface of the base material W and the photosensitive film Rg above the side surface of the base material W are not removed, and the upper surface of the substrate P and a part of the side surface of the substrate P are exposed to the photosensitive film Rg. Formed by.

  FIG. 7 is a diagram illustrating an example of the processing apparatus 1 used for the film formation process SA1 and the film removal process SA2. The processing apparatus 1 spin coats a solution of a photosensitive material as disclosed in, for example, JP-A-9-213605 and JP-A-2006-93409 (corresponding US Patent Application Publication No. 2006/0068110). A photosensitive film Rg formed on the substrate W and including the coating apparatus 2 for applying based on the method and the edge rinse apparatus 3 capable of performing an edge rinse process. A part of Rg can be removed. The processing apparatus 1 shown in FIG. 7 includes a holding member 4 that can hold the lower surface of the substrate W, a rotation motor 5 that rotates the holding member 4, and a photosensitive material on the upper surface of the substrate W held by the holding member 4. A first nozzle 7 having a supply port 6 capable of supplying a solution; a second nozzle 9 having a supply port 8 capable of supplying an edge rinse liquid (solvent) to the peripheral edge of the substrate W held by the holding member 4; And a cup 10 disposed around the holding member 4 and receiving a solution of a photosensitive material and an edge rinse liquid. At the bottom of the cup 10, the scattered solution of the photosensitive material and the drainage port 11 for collecting and discharging the edge rinse liquid, and the scattered photosensitive material solution and the fine particles of the edge rinse liquid are reattached to the substrate P. In order to suppress this, an exhaust port 12 for discharging the gas inside the cup 10 is formed.

  When the photosensitive film Rg is formed on the substrate W, the supply port 6 of the first nozzle 7 is arranged so as to face the center of the upper surface of the substrate W held by the holding member 4. The processing apparatus 1 drives the rotary motor 5 to supply the photosensitive material solution to the upper surface of the substrate W from the supply port 6 of the first nozzle 7 while rotating the base material W held by the holding member 4. Thus, the photosensitive film Rg is formed on the substrate W.

  Moreover, when performing edge rinse (back rinse), the supply port 8 of the 2nd nozzle 9 is arrange | positioned so that the peripheral area | region of the lower surface of the board | substrate P hold | maintained at the holding member 4 may be opposed. The processing apparatus 1 drives the rotary motor 5 to rotate the substrate P held by the holding member 4 and direct the edge rinse liquid from the supply port 8 of the second nozzle 9 toward the peripheral region on the lower surface of the substrate P. At least the photosensitive film Rg on the lower surface of the substrate P is removed.

  7 includes the coating device 2 and the edge rinse device 3 and performs the film forming process SA1 and the film removing process SA2 while holding the substrate W on the holding member 4. The holding member of the coating apparatus 2 and the holding member of the edge rinse apparatus 3 are provided at different positions, and after the film formation process, the substrate W (substrate P) is unloaded from the holding member of the coating apparatus 2 and the edge rinse apparatus Alternatively, the film removal process may be executed by loading to the holding member 3.

  Further, in the immersion exposure process described later, if the liquid LQ can be prevented from entering from the gap around the substrate P, the photosensitive film Rg on a part (upper side) of the side surface of the substrate P may also be removed.

(Edge exposure processing SA3)
Next, the edge exposure process SA3 will be described. The peripheral edge exposure process SA3 is executed after the film removal process SA2 is completed. The peripheral exposure process SA3 includes a process of irradiating the peripheral region of the substrate P with the first exposure light EL1. The peripheral region of the substrate P irradiated with the first exposure light EL1 is a ring-shaped (annular) region, and includes the peripheral region of the upper surface of the substrate P and the side surface of the substrate P. As shown in FIG. 4, the peripheral exposure process SA3 exposes the photosensitive film Rg in the peripheral region on the upper surface of the substrate P and the photosensitive film Rg on the side surface of the substrate P with the first exposure light EL1. The first exposure light EL1 is applied to the photosensitive film Rg in the peripheral region of the substrate P without passing through a pattern.

  FIG. 8 is a diagram illustrating an example of the processing apparatus 13 used for the peripheral edge exposure processing SA3. The processing apparatus 13 irradiates the peripheral area of the substrate P with predetermined exposure light as disclosed in, for example, Japanese Patent Laid-Open No. 6-275516 (corresponding US Pat. No. 5,420,663), etc. A peripheral exposure apparatus that exposes the photosensitive film Rg of the substrate P is included. The peripheral exposure apparatus 13 shown in FIG. 8 has a holding member 14 that can hold the lower surface of the substrate P, a rotation motor 15 that rotates the holding member 14, and a rotation position detection that outputs a signal corresponding to the rotation position of the rotation motor 15. Instrument 16. The peripheral exposure device 13 includes a light source device 17 that emits the first exposure light EL1 and an optical system that guides the first exposure light EL1 from the light source device 17 to the peripheral region of the substrate P held by the holding member 14. And an irradiation unit 18. The first exposure light EL1 emitted from the emission surface 19 of the irradiating unit 18 is applied to the peripheral area of the substrate P through the diaphragm member 20 that shapes the first exposure light EL1. A light receiving unit 22 that has a light receiving surface 21 that can receive the first exposure light EL1 emitted from the irradiation unit 18 at a position facing the emission surface 19 of the irradiation unit 18 and outputs a signal corresponding to the light receiving state. Has been placed. The peripheral exposure device 13 monitors the light reception result of the light receiving unit 22 while the peripheral region of the substrate P is disposed between the emission surface 19 of the irradiation unit 18 and the light receiving surface 21 of the light receiving unit 22. By irradiating the peripheral area of the substrate P with the first exposure light EL while rotating the holding member 14 holding the lower surface, the photosensitive film Rg in the peripheral area of the substrate P is exposed. In the present embodiment, ArF excimer laser light (wavelength 193 nm) is used as the first exposure light EL1 emitted from the emission surface 19.

(Immersion exposure treatment SA4)
Next, the immersion exposure process SA4 will be described. The immersion exposure process SA4 is executed after the peripheral edge exposure process SA3 is completed. In the immersion exposure processing SA4, a liquid is applied to the central region that is not irradiated with the first exposure light EL1 in the peripheral exposure processing SA3 inside the peripheral region of the substrate P while contacting the photosensitive film Rg of the substrate P and the liquid LQ. The process which irradiates 2nd exposure light EL2 via LQ is included. The central region of the substrate P is a circular region inside the peripheral region on the upper surface of the substrate P, and includes a region where the first exposure light EL1 is not irradiated in the peripheral exposure processing SA3. As shown in FIG. 5, the photosensitive film Rg in the central region of the upper surface of the substrate P is exposed with the second exposure light EL2 by the immersion exposure processing SA4. In the present embodiment, the second exposure light EL2 is applied to the photosensitive film Rg in the central region of the substrate P through a pattern. The photosensitive film Rg in the central region of the substrate P is irradiated with the patterned second exposure light EL2.

  FIG. 9 is a diagram showing an example of the processing apparatus EX used for the immersion exposure processing SA4. The processing apparatus EX is disclosed in, for example, International Publication No. 99/49504 pamphlet, Japanese Patent Application Laid-Open No. 2005-109426 (corresponding US Patent Publication No. 2005/0280791), International Publication No. 2005/024517 pamphlet, and the like. And an immersion exposure apparatus that exposes the photosensitive film Rg on the substrate P by irradiating the substrate P with exposure light through the liquid LQ. An immersion exposure apparatus EX shown in FIG. 9 has a mask stage 23 that can move while holding a mask M having a pattern for manufacturing a device, and a substrate holder 24H that holds a substrate P. A substrate stage 24 that is movable while holding the substrate P, an illumination system IL that illuminates the mask M held on the mask stage 23 with the second exposure light EL2, and a mask M that is illuminated with the second exposure light EL2. And a projection optical system PL that projects an image of the pattern onto the substrate P. The mask M includes a reticle on which a device pattern to be reduced and projected on the substrate P is formed. In the present embodiment, a transmissive mask is used as the mask M, but a reflective mask may be used.

  The immersion exposure apparatus EX includes a nozzle member 25 that fills the optical path space of the exposure light EL with the liquid LQ. For example, when the substrate P is irradiated with the second exposure light EL2, the lower surface of the terminal optical element 26 closest to the image plane of the projection optical system PL and the terminal optical element among the plurality of optical elements of the projection optical system PL. Between the nozzle member 25 and the upper surface of the substrate P, the optical path space of the exposure light EL of the second exposure light EL2 between the lower surface of the element 26 and the upper surface of the substrate P disposed at a position facing the element 26 is filled with the liquid LQ. An immersion space LS for the liquid LQ is formed therebetween.

  In the present embodiment, the immersion exposure apparatus EX uses a liquid between the nozzle member 25 and the upper surface of the substrate P so that a partial region (local region) on the upper surface of the substrate P is covered with the liquid LQ. The immersion space LS is formed. In other words, the immersion exposure apparatus EX of the present embodiment is configured such that during exposure of the substrate P, a portion of the photosensitive film Rg of the substrate P including the projection region of the projection optical system PL is covered with the liquid LQ. A local liquid immersion method in which the liquid immersion space LS is formed between the member 25 and the upper surface of the substrate P is adopted. The immersion exposure apparatus EX forms an immersion region of the liquid LQ in a partial region of the photosensitive film Rg of the substrate P, and the second exposure is performed on the photosensitive film Rg of the substrate P via the liquid LQ of the immersion region. Irradiate light EL2. The nozzle member 25 is not only immersed between the substrate P and the upper surface of the object disposed at a position facing the lower surface (exit surface) 27 of the last optical element 26 from which the second exposure light EL2 is emitted. The space LS can be formed. For example, the nozzle member 25 can form an immersion space LS with the upper surface 24F of the substrate stage 24.

  The illumination system IL illuminates a predetermined illumination area on the mask M with the second exposure light EL2 having a uniform illuminance distribution. In the present embodiment, ArF excimer laser light (wavelength 193 nm) is used as the second exposure light EL2 emitted from the illumination system IL.

  In the present embodiment, the first exposure light EL1 used in the edge exposure process SA3 (edge exposure apparatus 13) and the second exposure light EL2 used in the liquid immersion exposure process SA4 (immersion exposure apparatus EX) have the same wavelength. is there. Thereby, the photosensitive film Rg can be exposed (photosensitized) by the first exposure light EL1 and the second exposure light EL2 in both the peripheral region and the central region of the substrate P.

  The mask stage 23 is movable in the X-axis, Y-axis, and θZ directions while holding the mask M by a drive system including an actuator such as a linear motor. Position information of the mask stage 23 (mask M) in the X-axis, Y-axis, and θZ directions is measured by a laser interferometer (not shown). The drive system drives the mask stage 23 based on the measurement result of the laser interferometer, and controls the position of the mask M held on the mask stage 23.

  The projection optical system PL projects an image of the pattern of the mask M onto the substrate P at a predetermined projection magnification. The projection optical system PL of the present embodiment is a reduction system whose projection magnification is, for example, 1/4, 1/5, or 1/8. Note that the projection optical system PL may be either an equal magnification system or an enlargement system. The projection optical system PL may be any of a refractive system that does not include a reflective optical element, a reflective system that does not include a refractive optical element, and a catadioptric system that includes a reflective optical element and a refractive optical element. Further, the projection optical system PL may form either an inverted image or an erect image.

  The substrate stage 24 includes a substrate holder 24H that holds the substrate P, and an upper surface 24F that is disposed around the substrate holder 24H and can face the lower surface 27 of the terminal optical element 26. The substrate holder 24H is disposed in a recess 24R provided on the substrate stage 24. The substrate holder 24H holds the substrate P so that the upper surface of the substrate P and the XY plane are substantially parallel. Further, the upper surface 24F of the substrate stage 24 is a flat surface substantially parallel to the XY plane. The upper surface of the substrate P held by the substrate holder 24H and the upper surface 24F of the substrate stage 24 are substantially flush with each other. The upper surface 24F is made of, for example, a material containing fluorine and has liquid repellency with respect to the liquid LQ. As described above, the nozzle member 25 can form the immersion space LS not only with the substrate P but also with the upper surface 24F of the substrate stage 24. For example, the nozzle member 25 has a second region around the edge of the central region of the substrate P. When the exposure is performed with the exposure light EL2, the liquid LQ comes into contact with the upper surface 24F.

  The substrate stage 24 is in the X-axis, Y-axis, Z-axis, θX, θY, and θZ directions on the surface plate 28 with the substrate P held by the substrate holder 24H by a drive system including an actuator such as a linear motor. It is possible to move in the direction of 6 degrees of freedom. Position information of the substrate stage 24 (substrate P) in the X-axis, Y-axis, and θZ directions is measured by a laser interferometer (not shown), and surface position information (Z-axis) of the surface of the substrate P held on the substrate stage 24. , ΘX, and θY directions) is detected by a focus / leveling detection system. The drive system controls the position of the substrate P held on the substrate stage 24 based on the measurement result of the laser interferometer and the detection result of the focus / leveling detection system.

  FIG. 10 is a cross-sectional view showing the vicinity of the nozzle member 25. The nozzle member 25 has a supply port 29 for supplying the liquid LQ to the optical path space of the exposure light EL between the terminal optical element 26 and the substrate P, and a recovery port 30 for recovering the liquid LQ. The supply port 29 is connected to the liquid supply device through a flow path. The liquid supply device can supply clean and temperature-adjusted liquid LQ to the supply port 29. The recovery port 30 is connected to a liquid recovery apparatus including a vacuum system via a flow path. The liquid recovery apparatus can recover the liquid LQ in the immersion space LS via the recovery port 30. In the present embodiment, a porous member (mesh) 31 is disposed in the recovery port 30.

  The immersion exposure apparatus EX performs the liquid supply operation of the supply port 29 and the liquid recovery operation of the recovery port 30 in parallel to form the immersion space LS. The nozzle member 25 forms an immersion space LS so that the optical path space of the exposure light EL between the exit surface 27 of the last optical element 26 and the upper surface of the substrate P is filled with the liquid LQ supplied from the supply port 9.

  The exposure apparatus EX uses the nozzle member 25 to fill the optical path space of the exposure light EL with the liquid LQ while projecting at least the pattern image of the mask M onto the substrate P. The exposure apparatus EX applies the second exposure light EL2 through the pattern of the mask M to the photosensitive film Rg in the central region on the upper surface of the substrate P while bringing the photosensitive film Rg of the substrate P into contact with the liquid LQ. Irradiation is performed through the PL and the liquid LQ in the immersion space LS. Thereby, the photosensitive film Rg of the substrate P is exposed, and an image of the pattern of the mask M is projected onto the substrate P.

  When exposing the vicinity of the edge of the central region of the upper surface of the substrate P or moving the immersion space LS (immersion region) to the upper surface 24F of the substrate stage 24, as shown in FIG. Is disposed on the gap 32 between the upper surface of the substrate P held by the substrate holder 24H and the upper surface 24F of the substrate stage 24 provided around the substrate P. In the present embodiment, the upper surface 24F of the substrate stage 24 has liquid repellency, and the upper surface and the side surface of the substrate P are also formed by the photosensitive film Rg having liquid repellency. LQ penetration can be suppressed.

  The substrate holder 24H has a peripheral wall (seal member) 33, and the space surrounded by the lower surface of the substrate P and the peripheral wall 33 is a negative pressure space, whereby the substrate P is attracted and held by the substrate holder 24H. The In the present embodiment, the substrate P is held by the substrate holder 24H so that the upper surface of the peripheral wall 33 is in contact with the lower surface of the substrate P. In the present embodiment, the photosensitive film Rg is removed from the lower surface of the substrate P in contact with the upper surface of the peripheral wall 33 of the substrate holder 24H by the film removal process SA2, and the photosensitive film Rg is formed on the lower surface of the substrate P. Therefore, generation of particles due to the photosensitive film Rg can be suppressed.

  As shown in FIG. 11, the substrate stage 24 of the present embodiment includes lift pins 34 that can move up and down while holding the lower surface of the substrate P as disclosed in, for example, JP-A-2005-12009. An elevating mechanism 35 is provided. When loading (loading) or unloading (unloading) the substrate P with respect to the substrate holder 24 </ b> H using the substrate transfer device 36, the lift pipe 34 moves up and down while supporting the central portion of the lower surface of the substrate P. Since the photosensitive film Rg is not formed at the center of the lower surface of the substrate P, the photosensitive film Rg of the substrate P and the lift pins 34 are not in contact with each other. Accordingly, even when the substrate P is loaded or unloaded from the substrate holder 24H, the generation of particles due to the photosensitive film Rg is suppressed. Further, since the substrate transport device 36 of the immersion exposure apparatus EX also transports the substrate P while supporting the central portion of the lower surface of the substrate P, the photosensitive film Rg of the substrate P and the substrate transport device 36 do not come into contact with each other.

(Development SA5)
Next, the development process SA5 will be described. The development process SA5 is performed after both the edge exposure process SA3 and the liquid immersion exposure process SA4 are completed. The photosensitive film Rg of the present embodiment is formed of a positive resist, and the development processing SA5 is a photosensitive film on the substrate P irradiated with the first exposure light EL1 and the second exposure light EL2 using a developer. Rg is removed. As shown in FIG. 6, by the development process SA5, the photosensitive film Rg in the peripheral region of the substrate P irradiated with the first exposure light EL1 and the central region of the upper surface of the substrate P irradiated with the second exposure light EL2 Part of the photosensitive film Rg is removed. Since the development processing SA5 is executed after both the edge exposure processing SA3 and the liquid immersion exposure processing SA4 are completed, the portion exposed to the first exposure light EL1 and the second exposure light EL2 are irradiated by the development processing SA5. The removed portion is removed at once.

  FIG. 12 is a diagram illustrating an example of the processing device 37 used for the development processing SA5. The processing device 37 supplies a developing solution to the exposed photosensitive film Rg as disclosed in, for example, JP-A-2006-60084 (corresponding US Patent Application Publication No. 2006/0040051). And a developing device for removing the photosensitive film Rg in the portion irradiated with the exposure light. The developing device 37 shown in FIG. 12 has a holding member 38 that can hold the lower surface of the substrate P after exposure, a rotation motor 39 that rotates the holding member 38, and a developer on the substrate P held by the holding member 38. A third nozzle 41 having a supply port 40 capable of supplying the liquid and a cup 42 disposed around the holding member 38 and receiving the developer. A drain port 43 for collecting and discharging the developer is formed at the bottom of the cup 42.

  When developing the exposed substrate P, the supply port 40 of the third nozzle 41 is disposed so as to face the center of the upper surface of the substrate P held by the holding member 38. The developing device 37 drives the rotation motor 39 to rotate the substrate P held by the holding member 38 and supply the developing solution to the substrate P from the supply port 40 of the third nozzle 41, thereby causing the substrate P to move. develop.

  By the development process SA5, a part of the photosensitive film Rg corresponding to the pattern of the mask M is removed in the central region of the upper surface of the substrate P. Further, in the peripheral region of the substrate P, all the photosensitive film Rg formed in the peripheral region is removed.

  A pattern (device pattern) corresponding to the pattern of the mask M is formed on the substrate P by executing predetermined processing including etching processing after the development processing SA5. After the development processing SA5, for example, a member such as a transport device that transports the substrate P may come into contact with the peripheral region of the substrate P. However, the photosensitive film Rg in the peripheral region of the substrate P is removed in the development processing SA5. Therefore, the generation of particles due to the photosensitive film Rg is suppressed.

  In addition, after executing the film formation process SA1, before executing the immersion exposure process SA4, after executing the immersion exposure process SA4, before executing the development process SA5, after executing the development process SA5, etc. At the timing, a predetermined process such as a baking process is executed as necessary.

  FIG. 13 is a schematic diagram illustrating an example of a substrate processing system SYS including the processing apparatus 1, the edge exposure apparatus 13, the immersion exposure apparatus EX, and the development apparatus 37 described above. Between each processing apparatus, the base material W and the board | substrate P are conveyed by the conveying apparatus.

  A substrate processing system SYS shown in FIG. 13 includes an immersion exposure apparatus EX and a coater / developer apparatus CD that is connected to the immersion exposure apparatus EX and includes the processing apparatus 1, the edge exposure apparatus 13, and the development apparatus 37 described above. including. The immersion exposure apparatus EX and the coater / developer apparatus CD are connected via an interface IF, and the substrate P is interfaced between the immersion exposure apparatus EX and the coater / developer apparatus CD by a transport apparatus (not shown). Can be conveyed via

  As described above, according to the present embodiment, since the surface of the peripheral region of the substrate P is formed by the photosensitive film Rg that is liquid repellent with respect to the liquid LQ, the substrate P is held by the substrate holder 24H. Even when immersion exposure is performed in this state, it is possible to prevent the liquid LQ from entering through the gap 32 formed around the peripheral region of the substrate P. Further, the upper surface 24F of the substrate stage 24 facing the peripheral region of the substrate P held by the substrate holder 24H with a predetermined gap 32 is also liquid repellent with respect to the liquid LQ, Since the upper surface 24F of the substrate stage 24 is substantially flush with the upper surface 24F, it is possible to satisfactorily suppress the liquid LQ from entering through the gap 32. Therefore, it is possible to suppress the occurrence of problems such as the lower surface of the substrate P getting wet or the substrate holder 24H getting wet due to the penetration of the liquid LQ.

  In the film formation process SA1, the photosensitive film Rg in the peripheral area of the substrate P is exposed in the peripheral exposure process SA3. Therefore, in the development process SA5 performed after the immersion exposure process SA4, The photosensitive film Rg in the peripheral area can be removed. When the photosensitive film Rg is formed in the peripheral area, when the photosensitive film Rg and a member such as a substrate transport device come into contact with each other, a part of the photosensitive film Rg may be peeled off and become particles. In the present embodiment, while the immersion exposure process SA4 is being performed, the peripheral area of the substrate P is formed of the liquid repellent photosensitive film Rg to suppress the penetration of the liquid LQ, and the development process SA5 is performed. After this, the photosensitive film Rg disappears from the peripheral area of the substrate P. Therefore, even when the development processing SA5 is performed, even when the substrate transport device or the support member for storing the substrate P comes into contact with the peripheral area of the substrate P, the generation of particles due to the photosensitive film Rg can be suppressed.

  The immersion exposure apparatus EX that performs the immersion exposure process SA4 includes an elevating mechanism 35 that moves up and down while supporting the lower surface of the substrate P, and holds or moves (carrys) the substrate P. It does not come into contact with the peripheral area of the substrate P. Therefore, in the immersion exposure apparatus EX, the generation of particles due to the photosensitive film Rg in the peripheral region of the substrate P is suppressed.

  Further, in the present embodiment, after the photosensitive film Rg is formed up to the peripheral region of the substrate P in the film formation process SA1, the back rinse process is performed in the film removal process SA2. Thereby, even if the upper surface of the peripheral wall 33 of the substrate holder 24H and the lower surface of the substrate P are in contact with each other, the photosensitive film Rg is not formed on the lower surface of the substrate P. Therefore, generation of particles due to the photosensitive film Rg is suppressed. Is done.

  In the present embodiment, the edge exposure process SA3 is executed before the immersion exposure process SA4. The photosensitive film Rg of this embodiment is a chemically amplified resist, and when it is necessary to manage the time from the completion of the immersion exposure process SA4 for forming the device pattern to the start of the development process SA5. As in this embodiment, before the immersion exposure process SA4 is executed, the peripheral exposure process SA3 is executed, so that the time from the end of the immersion exposure process SA4 to the start of the development process SA5 is improved. Can be managed. If the time from the end of the immersion exposure process SA4 to the start of the development process SA5 is allowed to some extent, the immersion exposure process SA4 is executed as shown in the flowchart of FIG. After that, the edge exposure processing SA3 may be executed. Also in the example illustrated in FIG. 14, the development processing SA5 is performed after both the peripheral edge exposure processing SA3 and the immersion exposure processing SA4 are completed.

  In the edge exposure process SA3, the first exposure light EL1 is not irradiated to the central region of the upper surface of the substrate P on which the device pattern is formed. In the immersion exposure process SA4, the second exposure light EL2 is applied to the substrate P. It may be irradiated to the peripheral region.

  In this embodiment, the case where the photosensitive film Rg is directly formed on the base material W such as a silicon substrate has been described as an example. However, for example, an antireflection film (bottom ARC (Anti) is formed on the base material W. -Reflective Coating)), a photosensitive film Rg may be formed on the antireflection film, or a HMDS (hexamethylzine lazan) film may be formed on the substrate W and then exposed to light. A film Rg may be formed. Further, both the antireflection film and the HMDS film may be arranged between the substrate W and the photosensitive film Rg. A plurality of antireflection films may be disposed between the substrate W and the photosensitive film Rg.

In the above embodiment, for the sake of simplicity, the case where the photosensitive film Rg is formed on the silicon substrate has been described as an example. However, the surface (base) of the base material W is oxidized by SiO ₂ or the like. It may be a membrane. Further, the surface (base) of the substrate W is an oxide film such as SiO ₂ formed by the previous process, an insulating film such as SiO ₂ and SiNx, a metal / conductor film such as Cu and Al—Si, amorphous Si, etc. In some cases, it may be at least one surface of a semiconductor film. In any case, if the base material W is exposed in the peripheral region of the substrate P, the possibility that the liquid LQ enters the gap of the substrate stage is increased. By performing the immersion exposure process while leaving the photosensitive film Rg having liquid repellency in the peripheral region of the substrate P, the liquid LQ is formed in the gap 32 formed around the substrate P during the immersion exposure process. Infiltration can be suppressed.

  Further, in the above-described embodiment, the peripheral area of the substrate P is exposed using the peripheral exposure apparatus 13, but the first pattern patterned in the central area on the upper surface of the substrate P without providing the peripheral exposure apparatus 13. The peripheral area of the substrate P may be exposed by the immersion exposure apparatus EX before or after the operation of irradiating the two exposure light EL2. In this case, the mask M is retracted from the optical path of the second exposure light EL2 so that the entire peripheral area of the substrate P is exposed with the second exposure light EL2, or the central region on the upper surface of the substrate P is irradiated with the exposure light EL. The irradiation area of the second exposure light EL2 may be limited so as not to be performed.

  In the projection optical system of the above-described embodiment, the optical path space on the image plane side (exit side) of the terminal optical element is filled with liquid, but as disclosed in International Publication No. 2004/019128, It is also possible to employ a projection optical system in which the optical path space on the object plane side (incident side) of the last optical element is filled with liquid.

  In addition, although the liquid LQ of this embodiment is water, liquids other than water may be sufficient. The liquid LQ is preferably a liquid LQ that is transmissive to the exposure light EL, has a refractive index as high as possible, and is stable with respect to the projection optical system or a photosensitive material (photoresist) film that forms the surface of the substrate. For example, as the liquid LQ, hydrofluoroether (HFE), perfluorinated polyether (PFPE), fomblin oil, cedar oil, or the like can be used. As a material for forming the photosensitive film Rg, a material having liquid repellency with respect to the liquid LQ to be used is used. A liquid LQ having a refractive index of about 1.6 to 1.8 may be used. Further, an optical element (such as the final optical element FL) of the projection optical system PL that is in contact with the liquid LQ may be formed of a material having a refractive index higher than that of quartz and fluorite (for example, 1.6 or more). In addition, various fluids such as a supercritical fluid can be used as the liquid LQ.

Further, for example, when the exposure light EL is F ₂ laser light, the F ₂ laser light does not transmit water, so that the liquid LQ can transmit F ₂ laser light, such as perfluorinated polyether (PFPE). ), Fluorine-based fluids such as fluorine-based oils can be used. In this case, a lyophilic treatment is performed by forming a thin film with a substance having a small molecular structure including fluorine, for example, in a portion in contact with the liquid LQ.

  In the above-described embodiment, the configuration of the liquid immersion system such as the nozzle member is not limited to the above-described one. For example, the liquid immersion system disclosed in International Publication No. 2004/0886468 and International Publication No. 2005/024517 Can also be used.

  The substrate P in each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by moving the mask M and the substrate P synchronously, the mask M and the substrate P Can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the substrate P is stationary and the substrate P is sequentially moved stepwise.

  Furthermore, in the step-and-repeat exposure, after the reduced image of the first pattern is transferred onto the substrate P using the projection optical system while the first pattern and the substrate P are substantially stationary, the second pattern With the projection optical system, the reduced image of the second pattern may be partially overlapped with the first pattern and collectively exposed on the substrate P (stitch type batch exposure apparatus). ). Further, the stitch type exposure apparatus can be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially transferred on the substrate P, and the substrate P is sequentially moved.

  Further, as disclosed in, for example, Japanese translations of PCT publication No. 2004-51850 (corresponding US Pat. No. 6,611,316), two mask patterns are synthesized on a substrate via a projection optical system. The present invention can also be applied to an exposure apparatus that double-exposes one shot area on a substrate almost simultaneously by multiple scanning exposures. The present invention can also be applied to proximity type exposure apparatuses, mirror projection aligners, and the like.

  In addition, the present invention relates to JP-A-10-163099, JP-A-10-214783, JP2000-505958A, US Pat. No. 6,341,007, US Pat. No. 6,400,441, US Pat. Twin with multiple substrate stages as disclosed in US Pat. No. 6,549,269 and US Pat. No. 6,590,634, US Pat. No. 6,208,407, US Pat. No. 6,262,796, etc. It can also be applied to a stage type exposure apparatus.

  Further, as disclosed in, for example, JP-A-11-135400 (corresponding international publication 1999/23692 pamphlet), JP-A 2000-164504 (corresponding US Pat. No. 6,897,963), etc. The present invention can also be applied to an exposure apparatus that includes a substrate stage for holding a substrate and a reference member on which a reference mark is formed and / or a measurement stage on which various photoelectric sensors are mounted.

  The above-described embodiment can also be applied to an exposure apparatus that includes a plurality of substrate stages and measurement stages.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on the substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). ), An exposure apparatus for manufacturing a micromachine, a MEMS, a DNA chip, a reticle, a mask, or the like.

  In each of the above-described embodiments, the position information of each stage 23 and 24 is measured using an interferometer system including a laser interferometer. However, the present invention is not limited to this. For example, a scale provided in each stage An encoder system for detecting (diffraction grating) may be used. In this case, it is preferable that a hybrid system including both the interferometer system and the encoder system is used, and the measurement result of the encoder system is calibrated using the measurement result of the interferometer system. Further, the position of the stage may be controlled by switching between the interferometer system and the encoder system or using both.

  In each of the above-described embodiments, an ArF excimer laser may be used as a light source device that generates ArF excimer laser light as exposure light EL. For example, WO 1999/46835 pamphlet (corresponding US Pat. No. 7, No. 023,610) includes a solid-state laser light source such as a DFB semiconductor laser or a fiber laser, an optical amplification unit having a fiber amplifier, a wavelength conversion unit, and the like, and outputs pulsed light having a wavelength of 193 nm A harmonic generator may be used. Furthermore, in the above-described embodiment, each illumination area and the projection area described above are rectangular, but other shapes such as an arc shape may be used.

  In the above-described embodiment, a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used. As disclosed in US Pat. No. 6,778,257, a variable shaping mask (an electronic mask, an active mask, or an image) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed. (Also called a generator) may be used. The variable shaping mask includes, for example, a DMD (Digital Micro-mirror Device) which is a kind of non-light emitting image display element (spatial light modulator). The variable shaping mask is not limited to DMD, and a non-light emitting image display element described below may be used instead of DMD. Here, the non-light-emitting image display element is an element that spatially modulates the amplitude (intensity), phase, or polarization state of light traveling in a predetermined direction, and a transmissive liquid crystal modulator is a transmissive liquid crystal modulator. An electrochromic display (ECD) etc. are mentioned as an example other than a display element (LCD: Liquid Crystal Display). In addition to the DMD described above, the reflective spatial light modulator includes a reflective mirror array, a reflective liquid crystal display element, an electrophoretic display (EPD), electronic paper (or electronic ink), and a light diffraction type. An example is a light valve (Grating Light Valve).

  Further, a pattern forming apparatus including a self-luminous image display element may be provided instead of the variable molding mask including the non-luminous image display element. In this case, an illumination system is unnecessary. Here, as a self-luminous image display element, for example, CRT (Cathode Ray Tube), inorganic EL display, organic EL display (OLED: Organic Light Emitting Diode), LED display, LD display, field emission display (FED: Field Emission) Display), plasma display (PDP: Plasma Display Panel), and the like. Further, as a self-luminous image display element provided in the pattern forming apparatus, a solid light source chip having a plurality of light emitting points, a solid light source chip array in which a plurality of chips are arranged in an array, or a plurality of light emitting points on a single substrate A built-in type or the like may be used to form a pattern by electrically controlling the solid-state light source chip. The solid light source element may be inorganic or organic.

  In each of the above embodiments, the exposure apparatus provided with the projection optical system PL has been described as an example. However, the present invention can be applied to an exposure apparatus and an exposure method that do not use the projection optical system PL. Even when the projection optical system PL is not used in this way, the exposure light is irradiated onto the substrate via an optical member such as a lens, and an immersion space is formed in a predetermined space between the optical member and the substrate. It is formed.

  Further, as disclosed in, for example, International Publication No. 2001/035168, an exposure apparatus (lithography system) that exposes a line and space pattern on the substrate P by forming interference fringes on the substrate P. The present invention can also be applied to.

  It should be noted that the disclosure of all published publications and US patents related to the processing apparatus, immersion exposure apparatus, and the like cited in the above embodiment and modifications are incorporated herein by reference.

  As described above, the exposure apparatus EX according to the embodiment of the present application maintains various mechanical subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection, and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 13, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate which is a base material of the device. Manufacturing step 203, substrate processing step 204 including substrate processing (exposure processing) for exposing the mask pattern to the substrate and developing the exposed substrate according to the above-described embodiment, device assembly step (dicing process, bonding process, (Including a processing process such as a packaging process) 205, an inspection step 206, and the like. Step 204 includes the film formation process SA1, the film removal process SA2, the edge exposure process SA3, the immersion exposure process SA4, and the development process SA5 of the above-described embodiment.

It is a flowchart figure which shows an example of the substrate processing method which concerns on this embodiment. It is a schematic diagram which shows the state of the board | substrate after a film formation process. It is a schematic diagram which shows the state of the board | substrate after a film | membrane removal process. It is a schematic diagram which shows the state of the board | substrate after a periphery exposure process. It is a schematic diagram which shows the state of the board | substrate after an immersion exposure process. It is a schematic diagram which shows the state of the board | substrate after a development process. It is a figure which shows an example of the processing apparatus which performs a film | membrane formation process and a film | membrane removal process. It is a figure which shows an example of the processing apparatus which performs a periphery exposure process. It is a figure which shows an example of the processing apparatus which performs an immersion exposure process. It is the figure which expanded a part of immersion exposure apparatus. It is a schematic diagram which shows an example of operation | movement of an immersion exposure apparatus. It is a figure which shows an example of the processing apparatus which performs a development process. It is a mimetic diagram showing an example of a substrate processing system concerning this embodiment. It is a flowchart figure which shows an example of the substrate processing method which concerns on this embodiment. It is a flowchart figure which shows an example of the manufacturing process of a microdevice.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Processing apparatus, 13 ... Edge exposure apparatus, 24 ... Substrate stage, 24F ... Upper surface, 24H ... Substrate holder, 37 ... Development apparatus, EX ... Immersion exposure apparatus, EL1 ... First exposure light, EL2 ... Second exposure light , LQ ... liquid, M ... mask, P ... substrate, Rg ... photosensitive film, SYS ... substrate processing system, W ... substrate

Claims (15)

A substrate processing method including an immersion exposure process for exposing a photosensitive film on a substrate through a liquid,
Forming a photosensitive film that is liquid repellent to the liquid on the substrate;
Irradiating a peripheral region of the substrate with first exposure light to perform a peripheral exposure process for exposing a photosensitive film formed on the substrate;
While contacting the photosensitive film formed on the substrate and the liquid, irradiate the second exposure light through the liquid on the inner side of the peripheral area of the substrate not irradiated with the first exposure light. Performing the immersion exposure process for exposing the photosensitive film formed on the substrate;
After both the peripheral edge exposure process and the liquid immersion exposure process are completed, the photosensitive film formed on the substrate is developed, and the photosensitive material on the substrate irradiated with the first exposure light and the second exposure light is exposed. Removing the membrane;
A substrate processing method.   The substrate processing method according to claim 1, wherein the edge exposure process is executed before the immersion exposure process.   The substrate processing method according to claim 1, wherein the first exposure light is applied to the substrate without a pattern, and the second exposure light is applied to the substrate through a pattern.   The substrate processing according to any one of claims 1 to 3, further comprising executing a film removal process for removing a part of the photosensitive film formed on the substrate before performing the immersion exposure process. Method.   The substrate processing method according to claim 4, wherein the second exposure light is applied to the photosensitive film formed on the upper surface of the substrate, and the photosensitive film on the lower surface of the substrate is removed in the film removal processing.   The substrate processing method according to claim 1, wherein the substrate includes a silicon substrate.   The substrate processing method according to claim 1, further comprising forming an immersion area of the liquid in a part of the photosensitive film on the substrate in the immersion exposure process. A substrate processing system for performing a process of exposing a photosensitive film on a substrate through a liquid,
A first processing apparatus for forming a liquid-repellent photosensitive film on the substrate on the substrate;
A second processing apparatus for performing a peripheral exposure process of irradiating a peripheral region of the substrate with a first exposure light to expose a photosensitive film formed on the substrate;
While contacting the photosensitive film formed on the substrate and the liquid, irradiate the second exposure light through the liquid on the inner side of the peripheral area of the substrate not irradiated with the first exposure light. A third processing apparatus for exposing the photosensitive film formed on the substrate;
After both the peripheral edge exposure process and the liquid immersion exposure process are completed, the photosensitive film formed on the substrate is developed, and the photosensitive material on the substrate irradiated with the first exposure light and the second exposure light is exposed. A fourth processing apparatus for removing the film;
Including substrate processing system.   The substrate processing system according to claim 8, wherein the edge exposure process is executed by the second processing apparatus before the immersion exposure process is executed by the third processing apparatus.   10. The fifth processing apparatus further includes a fifth processing apparatus that performs a film removal process for removing a part of the photosensitive film formed on the substrate before the immersion exposure process is performed in the third processing apparatus. The substrate processing system as described. The third processing apparatus irradiates the second exposure light to the photosensitive film formed on the upper surface of the substrate,
The substrate processing system according to claim 10, wherein the fifth processing apparatus removes the photosensitive film on a lower surface of the substrate. The third processing apparatus has a substrate holding device having a holding unit for holding the substrate on which the photosensitive film is formed,
The substrate processing system according to claim 8, wherein the substrate holding device has a liquid contact surface that is liquid repellent with respect to the liquid around the holding unit.   The substrate processing system according to claim 12, wherein the surface of the substrate held by the holding unit of the substrate holding device is substantially flush with the liquid contact surface.   The substrate processing system according to claim 8, wherein the first exposure light and the second exposure light have the same wavelength.   The device manufacturing method using the substrate processing system as described in any one of Claims 8-14.

Images