JP2008072148A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of securing a sufficient area size in which an electrode pad of the semiconductor device faces a bump electrode even when the location of the bump electrode formed on a conductor wiring on a wiring board is shifted to the longitudinal direction of the conductor wiring. <P>SOLUTION: A semiconductor device is provided with a wiring board having an insulating substrate 1, a plurality of conductor wiring 2 installed in line on the insulating substrate, and a bump electrode formed on each of a plurality of conductor wirings, and a semiconductor element mounted thereon. The bump electrode is electrically connected with an electrode pad of the semiconductor element. A distance between a center line of the semiconductor element and electrode pad is larger than the distance d between a center line C2 of a mounting part of the semiconductor element on the wiring board and the conductor wiring. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a structure of a semiconductor device in which a semiconductor element is mounted on a wiring substrate such as a tape carrier substrate used for a chip-on-film (COF), particularly a wiring substrate in which a protruding electrode is formed on a conductor wiring.

  COF (Chip On Film) is known as a kind of package module using a film substrate. FIG. 14 is a cross-sectional view showing a part of an example of a COF. The COF has a structure in which a semiconductor element 21 is mounted on a flexible insulating tape carrier substrate 20 and is protected by a sealing resin 22, and is mainly used as a driver for driving a flat panel display. The tape carrier substrate 20 includes, as main elements, an insulating film base material 23 and conductor wiring 24 formed on the surface thereof. If necessary, a layer of a metal plating film 25 and a solder resist 26 that is an insulating resin is formed on the conductor wiring 24. Generally, polyimide is used as the film base 23 and copper is used as the conductor wiring 24.

  In addition, the conductor wiring 24 on the tape carrier substrate 20 and the electrode pad 27 on the semiconductor element 21 are connected via a protruding electrode 28. The protruding electrode 28 is provided by either a method in which the protruding electrode 28 is previously formed on the conductor wiring 24 on the tape carrier substrate 20 or a method in which the protruding electrode 28 is formed on the electrode pad 27 on the semiconductor element 21.

  In order to form the protruding electrode 28 on the conductor wiring 24 on the tape carrier substrate 20, for example, a method described in Patent Document 1 is used. The steps of the manufacturing method will be described with reference to FIG. 15 (a1) to (f1) are plan views showing a part of a film substrate in the manufacturing process of the conventional example. 15 (a2) to (f2) are cross-sectional views corresponding to FIGS. 15 (a1) to (f1), respectively. Each cross-sectional view is shown at a position corresponding to CC in FIG. This manufacturing process is an example in the case where bump electrodes are formed by metal plating.

  First, a photoresist 29 is formed on the entire surface of the film base material 23 (FIG. 15A1) on which the conductor wiring 24 is formed (FIG. 15B1). Next, the photoresist 29 is exposed through the light transmission region 30a by using the exposure mask 30 for forming the protruding electrodes (FIG. 15 (c1)). Next, the photoresist 29 is developed to form an opening pattern 29a (FIG. 15 (d1)), and metal plating is performed through the opening pattern 29a (FIG. 15 (e1)). If the photoresist 29 is peeled off, the tape carrier substrate 20 in which the protruding electrodes 28 are formed on the conductor wiring 24 is obtained as shown in FIG. As shown in FIG. 15 (f1), the protruding electrodes 28 are generally arranged along the four sides of the rectangular film substrate 1, but a plurality of rows instead of one row for each side. In some cases, they are arranged.

As described above, when the protruding electrode 28 is formed on the conductor wiring 24 of the tape carrier substrate 20, the alignment of the exposure mask 30 is difficult due to the characteristics of the film base 1. If the alignment of the exposure mask 30 is misaligned, a good protruding electrode 28 cannot be formed. Therefore, the protruding electrode 28 is generally formed on the electrode pad 27 on the semiconductor element 21. On the other hand, the method of forming the protruding electrode 28 on the conductor wiring 24 on the tape carrier substrate 20 can reduce the number of steps and the manufacturing cost compared to the method of forming the protruding electrode 18 on the electrode pad 27 on the semiconductor element 21. There are advantages.
JP 2001-168129 A

  However, the shape of the protruding electrode 28 formed by the conventional method as described above was not good. FIG. 16 shows a cross-sectional view of a tape carrier substrate manufactured by the above-described manufacturing process. FIG. 16A is a cross-sectional view in the longitudinal direction of the conductor wiring 24, which is the same as FIG. 15F2. FIG. 16B shows a DD cross section in FIG. 16A, that is, a cross section in a direction crossing the conductor wiring 24.

  As shown in FIG. 16, the protruding electrode 28 is formed in a state of being bonded to the upper surface of the conductor wiring 24. Therefore, the protruding electrode 28 is held only by bonding of a small area on the upper surface of the conductor wiring 24. Therefore, when a lateral force is applied, the protruding electrode 28 is easily peeled off from the upper surface of the conductor wiring 24. For example, when a lateral force is applied between the semiconductor element 21 and the tape carrier substrate 20 while being connected to the electrode pad 27 (see FIG. 14) on the semiconductor element 21, the protruding electrode 28 is removed from the conductor wiring 24. There is a risk of peeling, and there is a problem in the stability of the connection state after mounting the semiconductor element.

  Further, since the protruding electrode 28 is formed by plating only on the upper surface of the conductor wiring 24 through the opening pattern 29a having a minute area shown in FIG. 15D1, the upper surface of the protruding electrode 28 becomes flat. If the upper surface of the protruding electrode 28 is flat, a failure occurs when connecting to the electrode pad 27 on the semiconductor element 21 as described below.

  First, if there is a misalignment between the protruding electrode 28 and the electrode pad 27, the protruding electrode 28 is likely to overlap with the electrode pad 27 adjacent to the electrode pad 27 to be connected. As a result, there is a risk of connection with an inappropriate electrode pad 27.

  Secondly, when the electrode pad 27 is connected, it is difficult to crush the natural oxide film formed on the surface of the electrode pad 27. Usually, the oxide film of the electrode pad 27 is crushed by the contact of the protruding electrode 28 to obtain an electrical connection with an unoxidized metal portion. However, if the upper surface of the protruding electrode 28 is flat, the oxide film is crushed. Is difficult.

  Third, as shown in FIG. 17, it is difficult to connect the protruding electrode 28 and the electrode pad 27 with the resin layer 22 interposed between the semiconductor element 21 and the tape carrier substrate 20. That is, when the semiconductor element 21 is mounted, the resin layer 22 is eliminated by the top surface of the protruding electrode 28 and the protruding electrode 28 and the electrode pad 27 are brought into contact. However, if the upper surface of the protruding electrode 28 is flat, the resin layer 22 The action to eliminate is not enough.

  Further, when the protruding electrode 28 is formed by the method of the conventional example shown in FIG. 15, if the alignment accuracy of the exposure mask 30 for forming the protruding electrode and the conductor wiring 24 is poor, the opening pattern 29a formed in the photoresist 29 is formed. The area overlapping the conductor wiring 24 is reduced. As a result, as shown in FIG. 18, the designed size cannot be ensured for the protruding electrode 28 formed on the conductor wiring 24. Such a defective size of the protruding electrode 28 becomes a more serious problem due to the narrowing of the pitch of the electrode pad 27 accompanying the increase in the output of COF in the future.

  The problem described above is remarkable in the case of a tape carrier substrate, but is a problem common to various wiring substrates.

  In view of the above problems, the present invention is such that the protruding electrode formed on the conductor wiring is held with a practically sufficient strength against the force applied in the lateral direction, and sufficient connection stability is achieved after mounting the semiconductor element. An object of the present invention is to provide a semiconductor device capable of obtaining high performance.

  A semiconductor device according to the present invention includes an insulating base material, a plurality of conductor wirings arranged in alignment on the insulating base material, and a wiring including a protruding electrode formed on each of the plurality of conductor wirings A distance between the center line of the semiconductor element and the electrode pad, wherein the protruding electrode and the electrode pad of the semiconductor element are electrically connected to each other; and a semiconductor element mounted on the wiring board. Is larger than the distance between the center line of the mounting portion of the semiconductor element of the wiring board and the conductor wiring.

  According to the semiconductor device of the present invention, even if the position of the protruding electrode formed on the conductor wiring on the wiring board is shifted in the length direction of the conductive wiring, the area where the electrode pad of the semiconductor element and the protruding electrode are opposed is sufficient. It is possible to secure a large size.

  Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings. In the following embodiments, the case of a tape carrier substrate will be described as an example. However, the idea of each embodiment can be applied to other wiring substrates as well.

(Embodiment 1)
The structure of the tape carrier substrate in the first embodiment will be described with reference to FIGS. FIG. 1 is a perspective view showing a part of a tape carrier substrate. 2A is a plan view showing a part of the tape carrier substrate, FIG. 2B is a front view showing a section, and FIG. 2C is a sectional view taken along line AA in FIG.

  As shown in FIG. 1, a plurality of conductor wirings 2 are arranged on a film substrate 1 and a protruding electrode 3 is formed on each conductor wiring 2. As shown in FIG. 2A, the planar shape of the protruding electrode 3 extends across the conductor wiring 2 and on both sides of the conductor wiring 2. As shown in FIG. 2C, the cross-sectional shape of the protruding electrode 3 in the width direction of the conductor wiring 2 is a medium-high shape that is joined to the upper surface and both side surfaces of the conductor wiring 2 and whose center is higher than both sides. . Further, the protruding electrode 3 is formed so as to be in contact with the surface of the film base 1 at both sides of the conductor wiring 2. The cross section of the protruding electrode 3 in the length direction of the conductor wiring 2 is substantially rectangular as shown in FIG.

  By forming the protruding electrode 3 as described above, the protruding electrode 3 is held on the conductor wiring 2 with a practically sufficient strength. That is, since the protruding electrode 3 is joined not only to the upper surface of the conductor wiring 2 but also to both side surfaces, the stability against the force applied in the lateral direction is sufficient.

  In addition, since the upper surface of the protruding electrode 3 is not flat but medium and high, it is suitable for connection to the electrode pad of the semiconductor element. First, even if there is a misalignment in the alignment between the protruding electrode 3 and the electrode pad, the protruding electrode 3 is less likely to be connected to the adjacent inappropriate electrode pad as compared with the case where the upper surface is flat. Second, when connecting to the electrode pad, the oxide film formed on the surface of the electrode pad can be easily crushed by the convex upper surface of the protruding electrode 3, and the interior not oxidized and good electrical property can be obtained. A connection is obtained. Third, when the bump electrode 3 and the electrode pad are connected with the resin layer interposed between the semiconductor element and the tape carrier substrate, the resin layer is easily removed by the top surface of the bump electrode 3. Can do.

  In addition, in order to acquire the above effect, it is not essential that the protruding electrode 3 is formed so as to be in contact with the surface of the film base 1 at both sides of the conductor wiring 2. However, when it has such a structure, it is hold | maintained to the conductor wiring 2 most stably with respect to the force added to a horizontal direction. Further, it is not essential that the cross section of the protruding electrode 3 in the length direction of the conductor wiring 2 is substantially rectangular, but such a structure has the best connection performance with the electrode pad of the semiconductor element, Moreover, it is easy to manufacture.

  As shown in FIG. 2C, the thickness of the protruding electrode 3 from the upper surface of the conductor wiring 2 is larger than the thickness in the lateral direction from the side surface of the conductor wiring 2. Although such a shape is not essential, a short circuit between the conductor wiring 2 and the semiconductor element 21 due to the undulation of the tape carrier substrate 6 is suppressed, and a short circuit with the protruding electrode 3 on the adjacent conductor wiring 2 is prevented. It is effective to avoid. This shape is formed by a manufacturing method using plating described later.

  As the film substrate 1, polyimide which is a general material can be used. Depending on other conditions, an insulating film material such as PET or PEI may be used. The conductor wiring 2 is usually formed using copper in a thickness range of 3 to 20 μm. If necessary, an epoxy-based adhesive may be interposed between the film base 1 and the conductor wiring 2.

  The thickness of the protruding electrode 3 is usually in the range of 3 to 20 μm. As a material of the protruding electrode 3, for example, copper can be used. When copper is used, it is desirable to apply metal plating to the protruding electrode 3 and the conductor wiring 2. For example, nickel plating is used as an inner layer and gold plating is applied as an outer layer. Alternatively, tin, (nickel + palladium), nickel only, or gold only may be applied. When metal plating is performed on the protruding electrode 3 and the conductor wiring 2, no plating is performed between the protruding electrode 3 and the conductor wiring 2. When metal plating is not applied to the protruding electrode 3, for example, gold or nickel is used as the protruding electrode 3, and nickel plating is performed between the protruding electrode 3 and the conductor wiring 2.

(Embodiment 2)
With reference to FIG. 3, the manufacturing method of the tape carrier substrate in Embodiment 2 is demonstrated. FIGS. 3A1 to 3F1 are plan views of a semiconductor element mounting portion, showing a manufacturing process for forming protruding electrodes on the tape carrier substrate. 3 (a2) to (f2) are enlarged sectional views of FIGS. 3 (a1) to (f1), respectively. Each cross-sectional view shows a cross-section at a position corresponding to BB in FIG.

  First, as shown in FIG. 3 (a1), a film substrate 1 on which a plurality of conductor wirings 2 are formed on the surface is prepared. A photoresist 4 is formed on the entire surface of the film substrate 1 as shown in FIG. Next, as shown in FIG. 3 (c1), an exposure mask 5 for forming protruding electrodes is opposed to the upper portion of the photoresist 4 formed on the film substrate 1. The light transmission region 5 a of the exposure mask 5 has a long hole shape that is continuous across the plurality of conductor wirings 2 in the alignment direction of the plurality of conductor wirings 2.

  By exposing and developing through the light transmission region 5a of the exposure mask 5, a long hole pattern 4a across the conductor wiring 2 is opened in the photoresist 4 as shown in FIG. 3 (d1). Thereby, a part of the conductor wiring 2 is exposed in the long hole pattern 4a. Next, the exposed portion of the conductor wiring 2 is subjected to metal plating through the long hole pattern 4a of the photoresist 4 to form the protruding electrode 3 as shown in FIG. 3 (e1). Next, if the photoresist 4 is removed, as shown in FIG. 3 (f1), the tape carrier substrate 6 in which the protruding electrodes 3 are formed on the conductor wiring 2 is obtained.

As described above, the conductor wiring 2 passes through the long hole pattern 4a formed in the photoresist 4.
By performing metal plating on the exposed portion, the protruding electrode 3 having a shape as shown in FIG. 2 can be easily formed. This is because not only the upper surface of the conductor wiring 2 but also the side surfaces are exposed in the step of FIG. 3 (e1), and plating is formed over the entire exposed surface of the conductor wiring 2.

  The long hole pattern 4a of the photoresist 4 does not have to have a continuous shape across a plurality of conductor wirings 2 as shown in FIG. That is, a pattern in which long holes corresponding to the plurality of conductor wirings 2 are discretely arranged can be used as long as the shape includes at least a predetermined range of regions on both sides of the conductor wiring 2. However, in the case of a long hole pattern continuous across a plurality of conductor wirings 2, the light transmission region 5a of the exposure mask 5 can be a continuous long hole as shown in FIG. 3 (c1). So it is easy to create. As long as the long hole pattern 4a is formed in a range extending over both sides of each conductor wiring 2, there is no problem even if the longitudinal direction has a slight angle with respect to the conductor wiring 2. It is most reasonable to be orthogonal to the direction.

  Further, by forming the long hole pattern 4 a on the photoresist 4 and performing metal plating, the positional accuracy of the protruding electrode 3 with respect to the conductor wiring 2 can be easily ensured. That is, if the positional deviation of the long hole pattern 4a with respect to the conductor wiring 2 is within an allowable range, the conductor wiring 2 and the long hole pattern 4a always intersect and the conductor wiring 2 is exposed. Since the metal plating grows on the upper surface and the side surface of the conductor wiring 2, it is formed in a fixed shape and size regardless of the positional deviation of the long hole pattern 4a, and the designed conditions can be satisfied. Accordingly, the alignment of the exposure mask 5 does not require strict accuracy and adjustment is easy.

When the protruding electrode 3 is formed of copper, as an example of metal plating, copper sulfate is used as a plating solution, and electrolytic plating is performed under conditions of 0.3 to 5 A / dm2. Electrolytic plating is suitable for forming the protruding electrode 3 with a sufficient thickness with a cross-sectional shape as shown in FIG.

  Next, a method for solving the problem caused by the positional deviation of the exposure mask 5 that occurs when the manufacturing method of the present embodiment is performed will be described. First, the mutual arrangement relationship between the electrode pads of the semiconductor element and the conductor wiring 2 of the tape carrier substrate 6 will be described with reference to FIGS.

  FIG. 4 is a plan view showing an example of a semiconductor element. The arrangement of the electrode pads formed on the surface of the semiconductor element 21 is shown. An electrode pad arranged in the long side direction of the semiconductor element 7 is indicated by 8a, and an electrode pad arranged in the short side direction is indicated by 8b. A large number of electrode pads 8a are arranged at a higher density than the electrode pads 8b. C1 indicates the center of the semiconductor element 7 (referred to as the semiconductor element center). D is the distance between the edge of the electrode pad 8a and C1. S1 is the distance between the edge of the electrode pad 8a and the side edge of the electrode pad 8b. L1 is the length of the electrode pad 8a, and W1 is the width of the electrode pad 8a.

  FIG. 5 is a plan view showing a part of the film base material 1 on which the conductor wiring 2 is formed, which is used for manufacturing the tape carrier substrate. C2 indicates the center of the region where the semiconductor element 7 is to be mounted (referred to as the center of the semiconductor element mounting portion). d is the distance between the edge of the conductor wiring 2 and the semiconductor element mounting portion center C2.

  FIG. 6 is a plan view showing a semiconductor mounting portion of the tape carrier substrate 6 in which the protruding electrode 3 is formed on the conductor wiring 2 by the manufacturing method of the present embodiment. The protruding electrode 3 in this figure shows a case where the exposure mask 5 in FIG. 3C1 is formed with no positional deviation with respect to the conductor wiring 2. L2 is the length of the protruding electrode 3, and W2 is the width of the protruding electrode 3.

Considering the positional shift of the exposure mask 5 in the length direction of the conductor wiring 2, the semiconductor element center C1
It is desirable to make the distance d from the semiconductor element mounting portion center C2 to the conductor wiring 2 shorter than the distance D from the electrode pad 8a. Further, it is desirable to make the length L2 of the protruding electrode 3 longer than the length L1 of the electrode pad 8a. Then, even if the position of the formed protruding electrode 3 is shifted in the length direction of the conductor wiring 2 due to the displacement of the exposure mask 5, the area where the electrode pad 8a and the protruding electrode 3 face each other is sufficient. The size can be secured.

  7 is a plan view showing a semiconductor mounting portion of the tape carrier substrate 6 in which the protruding electrodes 3 are formed on the conductor wiring 2 by the manufacturing method of the present embodiment, as in FIG. The protruding electrode 3 in this figure shows a case where the exposure mask 5 in FIG. 3 (c 1) is formed in a state of being displaced in the short side direction of the film substrate 1 with respect to the conductor wiring 2. S2 is the distance between the edge of the protruding electrode 3 on the conductor wiring 2 arranged in the long side direction of the film substrate 1 and the side edge of the conductor wiring 2 arranged in the short side direction.

  In the state shown in FIG. 7, the size of the protruding electrode 3 can satisfy all the designed dimensions. However, due to the direction of positional deviation between the conductor wiring 2 and the exposure mask 5, the distance S1 shown in FIG. There is a difference in the interval S2 shown in FIG. That is, when the exposure mask 5 is displaced in the short side direction of the film substrate 1, the position of the protruding electrode 3 is the longitudinal direction of the conductor wire 2 on the conductor wire 2 arranged in the long side direction of the film substrate 1. This is because the position of the protruding electrode 3 does not move on the conductor wiring 2 arranged in the short side direction of the film substrate 1. A method for solving this problem is shown in FIGS.

  FIG. 8 shows an exposure mask 9 in which the pattern of the exposure mask 5 used in the step of FIG. The exposure mask 9 has a long hole shape in which the light transmission region 9a corresponding to the long side of the film substrate 1 is continuous, whereas the light transmission region 9b corresponding to the short side is individually formed. Have a discrete shape with a plurality of openings arranged therein. In addition, as shown in FIG. 9, a film substrate 1 on which conductor wirings 10a and 10b are formed is used. In this embodiment, the conductor wiring 10b arranged in the short side direction is wider than the conductor wiring 10a arranged in the long side direction of the film substrate 1.

  By using the above-described exposure mask 9 to form a photoresist opening pattern on the above-described conductor wirings 10a and 10b and performing metal plating, the projected electrodes 3 having the designed size can be obtained, and the intervals shown in FIG. The interval S2 shown in FIG. 7 can be made the same as S1. That is, when the exposure mask 9 in FIG. 8 is displaced in the short side direction of the film substrate 1, the light transmission of the exposure mask 9 is performed on the conductor wiring 10b arranged in the short side direction of the film substrate 1 in FIG. The region 9b moves in the width direction, and the position of the protruding electrode 3 to be formed moves as shown in FIG. Moreover, since the conductor wiring 10b is formed wide, the protruding electrode 3 is formed with a predetermined size if the movement amount is within an allowable range. The amount of movement is equivalent to the amount by which the position of the protruding electrode 3 moves in the longitudinal direction of the conductor wiring 10a on the conductor wiring 10a arranged in the long side direction of the film substrate 1. As a result, S1 and S2 are the same.

  FIG. 10 corresponds to the step shown in FIG. 3C1, and shows a case where an exposure mask 11 of another form is used. In this embodiment, a light blocking area 11a is formed in the exposure mask 11 at a position corresponding to the light transmission area 5a of the exposure mask 5 in FIG. This exposure mask 11 is applied when the photoresist 4 is a negative type. Other conditions regarding the exposure mask 11 are the same as those of the exposure mask 5 in FIG.

(Embodiment 3)
With reference to FIG. 11, the structure of the tape carrier substrate and the manufacturing method thereof in the third embodiment will be described. In this Embodiment, the conductor wiring 12 formed on the film base material 1 has the shape where the front-end | tip part 12a became thinner than the other base end part 12b. This is due to the following reason.

  That is, a copper plating layer grows also in the width direction of the conductor wiring 2 when the protruding electrode 3 is formed by electrolytic metal plating shown in FIG. For this reason, there is a possibility that the copper plating layers grown in the width direction from the adjacent conductor wiring 2 may be short-circuited. If the interval between the conductor wirings 2 is increased in order to avoid this, the density of the conductor wirings 2 is lowered, which becomes an obstacle to miniaturization of the semiconductor device.

  Therefore, if the tip end portion 12a of the conductor wiring 12 is thinned and the protruding electrode 3 is formed on this thin portion as in this embodiment, the copper plating layer is adjacent when the copper plating layer grows in the width direction of the conductor wiring 12. The possibility of short circuit between copper plating layers is reduced.

(Embodiment 4)
With reference to FIG. 12, the semiconductor device and the manufacturing method thereof in the fourth embodiment will be described. As described in the above-described embodiment, the tape carrier substrate 8 is formed with the protruding electrodes 3 on the plurality of conductor wirings 2 arranged on the film base 1, and the protruding electrodes 3 are shown in FIG. It has the shape as shown. That is, the cross-sectional shape in the width direction of the conductor wiring 2 is a shape joined to the upper surface and both side surfaces of the conductor wiring 2 over the regions on both sides of the conductor wiring 2 across the conductor wiring 2. Moreover, the cross-sectional shape in the width direction of the conductor wiring 2 is a medium height with the center portion being higher than both sides. The protruding element 3 is connected to the electrode pad 27 of the semiconductor element 21 mounted on the tape carrier substrate 8, and a sealing resin 22 is filled between the tape carrier substrate 8 and the semiconductor element 21.

  In manufacturing this semiconductor device, the semiconductor element 21 is mounted on the tape carrier substrate 8 manufactured by the manufacturing method in the above-described embodiment and pressed by the bonding tool 13. At that time, it is desirable to apply ultrasonic waves through the bonding tool 13. As a result, the effect of crushing the oxide film is prominent because the tip of the protruding electrode 3 formed in a convex shape abuts against the oxide film on the surface layer of the electrode pad 27 and vibrates.

  Further, the semiconductor element 21 can be mounted on the tape carrier substrate 8 by a method as shown in FIG. That is, as shown in FIG. 13A, the sealing resin 14 is filled so as to cover the region of the tape carrier substrate 8 where the protruding electrodes 3 are formed. Next, the semiconductor element 21 and the tape carrier substrate 8 are opposed to each other and pressed toward each other, so that the protruding electrode 3 is brought into contact with the electrode pad 27 as shown in FIG. At that time, the sealing resin 14 is effectively removed on both sides by the upper surface of the protruding electrode 3 having a medium and high convex shape, and the protruding electrode 3 and the electrode pad 27 can be easily brought into contact with each other.

  According to the semiconductor element of the present invention, the area where the electrode pad and the protruding electrode of the semiconductor element are opposed to each other can be secured to a sufficient size, so that it is useful as a tape carrier substrate used for a chip-on-film (COF).

The perspective view which shows a part of tape carrier board | substrate in Embodiment 1. FIG. (A) is a plan view showing a part of the tape carrier substrate, (b) is a front view shown in cross section, (c) is a cross-sectional view taken along line AA in (b). The manufacturing method of the tape carrier board | substrate in Embodiment 2 is shown, (a1)-(f1) is a top view of the semiconductor element mounting part on a film base material in the manufacturing process which forms a protruding electrode, (a2)-( f2) are enlarged sectional views of (a1) to (f1), respectively. Plan view showing an example of a semiconductor element The top view which shows the film base material in which the conductor wiring was formed used for manufacture of a tape carrier substrate The top view which shows the semiconductor mounting part of an example of the tape carrier substrate manufactured by the manufacturing method of Embodiment 2 The top view which shows the semiconductor mounting part of the other example of the tape carrier board manufactured by the manufacturing method of Embodiment 2. FIG. Plan view showing an example of an exposure mask in the second embodiment The top view which shows the tape carrier board | substrate with which the conductor wiring of the modification in Embodiment 2 was provided The exposure process using the exposure mask of the other example in Embodiment 2 is shown, (a) is a top view, (b) is an expanded sectional view FIG. 9 is a plan view showing a tape carrier substrate in the third embodiment. Sectional drawing which shows the semiconductor device in Embodiment 4 Sectional drawing which shows the other example of the manufacturing method of the semiconductor device in Embodiment 4. FIG. Sectional drawing which shows a part of COF of a prior art example It is a figure for demonstrating the manufacturing process of the tape carrier board | substrate of a prior art example, (a1)-(f1) is a top view which shows a part of film base material, (a2)-(f2) is each sectional drawing. Sectional drawing which shows a part of tape carrier board produced by the manufacturing process of FIG. Sectional drawing which shows a mode that a semiconductor element is mounted in the tape carrier substrate of FIG. FIG. 15 is a plan view showing a part of a tape carrier substrate for explaining the problem of the manufacturing process of FIG.

Explanation of symbols

1, 23 Film substrate 2, 12, 24 Conductor wiring 3, 28 Protruding electrode 4, 29 Photoresist 4a Elongated pattern 5, 9, 11, 30 Exposure mask 5a, 9a, 11a, 30a Light transmission region 6, 20 Tape carrier substrate 7, 21 Semiconductor element 8a, 8b Electrode pad 10a, 10b Conductor wiring 12a Tip portion 12b Base end portion 13 Bonding tool 14, 22 Sealing resin 25 Metal plating film 26 Solder resist 27 Electrode pad 29a Opening pattern

Claims (1)

Insulating substrate, a plurality of conductor wirings arranged in alignment on the insulating substrate, and a wiring board comprising projecting electrodes formed on each of the plurality of conductor wirings, and on the wiring substrate With a semiconductor element mounted on the
The protruding electrode and the electrode pad of the semiconductor element are electrically connected, and the distance between the center line of the semiconductor element and the electrode pad is such that the center line of the mounting portion of the semiconductor element on the wiring board A semiconductor device characterized by being larger than a distance between the conductor wiring.

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