JP2008066590A - Compound semiconductor light emitting device, illumination apparatus employing the same and manufacturing method of compound semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To eliminate the necessity of taking into account conductivity, heat radiation performance and the absorbed wavelength of a substrate in a light emitting diode having a large number of nano-columns. <P>SOLUTION: A large number of nano-columns 2 formed by sequentially laminating a nano-column n-type semiconductor layer 4, a nano-column light emitting layer 5 and a nano-column p-type semiconductor layer 6 are formed on a growing substrate 1, and a p-type electrode 7 is formed. Then, a supporting substrate 9 is joined on the p-type electrode 7 to support the nano-columns 2, on the other hand, the growing substrate 1 is removed, and an n-type electrode 10 having transparency for the wavelength of light to be emitted from the light emitting layer 5 is joined to the nono-colomn n-type semiconductor layer 4. Thus, the device has a structure in which the n-type electrode 10 and the p-type electrode 7 are directly formed on the nano-column n-type semiconductor layer 4 and the nano-column p-type semiconductor layer 6, respectively, and light can be efficiently extracted by a simple method without taking into account the conductivity, heat radiation performance and absorbed wavelength of the substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a compound semiconductor light emitting device such as a III-V group compound semiconductor, a lighting device using the same, and a method of manufacturing the compound semiconductor device. In particular, the semiconductor device includes a nanoscale called a nanocolumn or a nanorod on a substrate. The columnar crystal structure is formed.

In recent years, compound semiconductor light emitting devices having a light emitting layer composed of a nitride semiconductor or an oxide semiconductor have attracted attention. As an example of the structure of this light emitting element, an n-cladding layer and a contact layer composed of an n ⁺ -GaN layer in which a sapphire substrate is used as a growth substrate and silicon (Si) is doped below the light emitting layer, an upper portion of the light emitting layer An electron block layer made of p-Al _x Ga _1-x N doped with magnesium (Mg) and a p-GaN contact layer on the electron block layer are formed. In these light-emitting elements using so-called bulk crystals, the lattice constants of the sapphire substrate and the nitride or oxide semiconductor layer are greatly different and are formed as a thin film on the substrate. Since threading dislocations are included, it is difficult to increase the efficiency of the light emitting element.

Therefore, Patent Document 1 is known as a conventional example of a technique for solving such a problem. In this conventional example, after forming an n-type GaN buffer layer on a sapphire substrate, a large number of the columnar crystal structures (nanocolumns) arranged in an array are formed, and a transparent insulator is formed between the GaN nanocolumns. A layer is embedded, and a transparent electrode and an electrode pad are formed into a film. In particular, the GaN nanocolumn includes an n-type GaN nanocolumn, an InGaN quantum well, and a p-type GaN nanocolumn. If this nanocolumn is used, it is possible to reduce the threading dislocations of the bulk crystal to be almost eliminated, and non-radiative recombination due to the threading dislocations can be reduced, so that the light emission efficiency can be improved.
JP 2005-228936 A

  In the prior art described above, sapphire is used as the growth substrate. Since the sapphire substrate is an insulator, it is necessary to form the n-type GaN buffer layer having conductivity in order to pass a current through each nanocolumn, and a part of the n-type GaN buffer layer. The columnar crystal structure must be removed to form an electrode. For this reason, a part of the element space is occupied by the electrodes and cannot be effectively used, and there is a problem in that the electrode formation process is complicated from lithography to etching and vapor deposition. Also, the sapphire substrate has poor heat dissipation, and when the injection current is increased, the output decreases due to heat generation, and the current flows from the electrode in the plane direction of the n-type GaN buffer layer, and the columnar crystal structure far from the electrode In the body, there is also a problem that the injection current decreases due to the sheet resistance.

  An object of the present invention is to provide a compound semiconductor light-emitting element capable of efficiently extracting light using a simple method without considering the conductivity, heat dissipation, and absorption wavelength of the substrate, an illumination device using the compound semiconductor light-emitting element, and the compound semiconductor element It is to provide a manufacturing method.

  The compound semiconductor light-emitting device of the present invention is a compound semiconductor light-emitting device comprising a plurality of columnar crystal structures in which an n-type compound semiconductor layer, a light-emitting layer, and a p-type compound semiconductor layer are sequentially stacked on a growth substrate. And a p-type electrode formed on the p-type compound semiconductor layer, a support substrate bonded on the p-type electrode, and a transparent n-type electrode instead of the growth substrate.

  The method for producing a compound semiconductor light-emitting device of the present invention includes a plurality of columnar crystal structures in which an n-type compound semiconductor layer, a light-emitting layer, and a p-type compound semiconductor layer are sequentially stacked on a growth substrate. In the method for manufacturing a compound semiconductor light emitting device, a step of forming a p-type electrode on the p-type compound semiconductor layer, a step of providing a support substrate on the p-type electrode, a step of removing the growth substrate, and exposing Forming a translucent n-type electrode on an end face of the n-type compound semiconductor layer.

  According to the above configuration, an n-type compound semiconductor layer, a light emitting layer, and a p-type compound semiconductor layer are sequentially stacked on a growth substrate, and a nanoscale columnar crystal structure called a nanocolumn or nanorod is formed. In a compound semiconductor light emitting device having a plurality of bodies, the columnar crystal structure is grown on the growth substrate serving as a base for forming the columnar crystal structure, and is formed on the p-type compound semiconductor layer. After forming the p-type electrode, a support substrate is bonded onto the p-type electrode to support the columnar crystal structure, and instead, the growth substrate is removed, with respect to the wavelength of light emitted from the light emitting layer. An n-type electrode having translucency is bonded to the n-type compound semiconductor layer. That is, the columnar crystal structure is supported on a support substrate, and the growth substrate is removed from the surface opposite to the light emitting layer of the n-type compound semiconductor layer where the growth substrate is conventionally positioned, and a transparent n-type electrode Install directly.

  Therefore, since the n-type electrode and the p-type electrode are directly formed on the n-type compound semiconductor layer and the p-type compound semiconductor layer, respectively, there is no need to consider the conductivity, heat dissipation, and absorption wavelength of the substrate. Can be used to efficiently extract light. Specifically, light extraction is first performed from the n-type electrode side, so that it is not necessary to form the p-type electrode side to be translucent. Thus, even if the light emitting layer is formed relatively far from the growth substrate in the columnar crystal structure, that is, even if the n-type compound semiconductor layer is formed thicker (higher) than the p-type compound semiconductor layer, the light emission The heat dissipation means can be provided on the p-type electrode side close to the layer (for example, the support substrate itself is used as the heat dissipation means), and the light emission efficiency characteristic of the compound semiconductor light emitting element having a plurality of columnar crystal structures is provided. The height can be fully utilized (a large current can be injected into the columnar crystal structure).

  Next, it is not necessary to remove some columnar crystal structures to form an n-type electrode, and the entire surface of the device can be used for light emission, and current is efficiently and uniformly injected into each columnar crystal structure. be able to. Furthermore, for the growth substrate, for example, a material such as Si, which is convenient for growth, such as a cheap material and a lattice constant close to that of the compound semiconductor layer to be grown thereon, can be used. A crystal structure can be obtained.

  Furthermore, the compound semiconductor light-emitting element of the present invention further includes a reflective layer that reflects the light emitted from the light-emitting layer on the p-type electrode.

  According to the above configuration, light leakage to the p-type electrode side is eliminated (light is not absorbed by the support substrate), the light extraction efficiency can be further improved, and the reflection angle by the reflective layer can be controlled. By controlling a part of the light emitted from the n-type electrode side, it is possible to collect the light in the desired direction.

  In the compound semiconductor light emitting device of the present invention, the reflective film is made of metal.

  According to said structure, a comparatively high reflectance can be obtained easily because the said reflecting film is a metal.

  Furthermore, in the compound semiconductor light emitting device of the present invention, the reflective film is a multilayer film in which a plurality of films having different refractive indexes are repeatedly laminated.

  According to said structure, a reflective mirror with a high reflectance can be formed, and a more efficient light emitting element can be implement | achieved.

  In the compound semiconductor light emitting device of the present invention, the support substrate also serves as a heat sink.

  According to the above configuration, by using the support substrate itself provided on the back surface of the p-type electrode close to the light emitting layer in the columnar crystal structure as the heat dissipation means, the heat dissipation effect can be further enhanced, and preferably the p-type electrode In other words, it is possible to increase the injection current by providing conductivity that can make ohmic contact.

  Furthermore, the lighting device of the present invention is characterized by using the compound semiconductor light emitting element.

  According to said structure, an illuminating device with high luminous efficiency is realizable.

  As described above, the compound semiconductor light-emitting device and the manufacturing method thereof according to the present invention are formed by sequentially stacking an n-type compound semiconductor layer, a light-emitting layer, and a p-type compound semiconductor layer on a growth substrate. In a compound semiconductor light-emitting device having a plurality of nanoscale columnar crystal structures referred to as above and a method for manufacturing the same, the columnar crystal structure is formed on the growth substrate serving as a base for forming the columnar crystal structures. After growing a crystal structure and forming a p-type electrode on the p-type compound semiconductor layer, a support substrate is bonded onto the p-type electrode to support the columnar crystal structure, and instead the growth substrate is The n-type electrode which removes and has translucency with respect to the wavelength of the light radiated | emitted from the said light emitting layer is joined to the said n-type compound semiconductor layer.

  Therefore, since the n-type electrode and the p-type electrode are directly formed on the n-type compound semiconductor layer and the p-type compound semiconductor layer, respectively, there is no need to consider the conductivity, heat dissipation, and absorption wavelength of the substrate. The light can be extracted efficiently using the method. Specifically, light extraction is first performed from the n-type electrode side, so that it is not necessary to form the p-type electrode side to be translucent. Thus, even if the light emitting layer is formed relatively far from the growth substrate in the columnar crystal structure, that is, even if the n-type compound semiconductor layer is formed thicker (higher) than the p-type compound semiconductor layer, the light emission The heat dissipation means can be provided on the p-type electrode side close to the layer (for example, the support substrate itself is used as the heat dissipation means), and the light emission efficiency characteristic of the compound semiconductor light emitting element having a plurality of columnar crystal structures is provided. The height can be fully utilized (a large current can be injected into the columnar crystal structure).

  Next, it is not necessary to remove some columnar crystal structures to form an n-type electrode, and the entire surface of the device can be used for light emission, and current is efficiently and uniformly injected into each columnar crystal structure. be able to. Furthermore, for the growth substrate, for example, a material such as Si, which is convenient for growth, such as a cheap material and a lattice constant close to that of the compound semiconductor layer to be grown thereon, can be used. A crystal structure can be obtained.

  Furthermore, as described above, the compound semiconductor light emitting device of the present invention further includes a reflective layer that reflects the light emitted from the light emitting layer on the p-type electrode.

  Therefore, light leakage to the p-type electrode side is eliminated (light is not absorbed by the support substrate), the light extraction efficiency can be further improved, and the reflection angle by the reflective layer is controlled, whereby the n-type A part of the light emitted from the electrode side can be controlled, and the light can be collected in the desired direction.

  In the compound semiconductor light emitting device of the present invention, the reflective film is made of metal as described above.

  Therefore, a relatively high reflectance can be easily obtained.

  Furthermore, in the compound semiconductor light emitting device of the present invention, as described above, the reflective film is a multilayer film in which a plurality of films having different refractive indexes are repeatedly laminated.

  Therefore, a reflecting mirror having a high reflectance can be formed, and a more efficient light emitting element can be realized.

  In the compound semiconductor light emitting device of the present invention, as described above, the support substrate functions as a heat sink.

  Therefore, by using the support substrate itself provided on the back surface of the p-type electrode close to the light emitting layer in the columnar crystal structure as a heat dissipation means, the heat dissipation effect can be further enhanced, and preferably the ohmic contact with the p-type electrode is further improved. By providing conductivity that can be obtained, the injection current can be further increased.

  Furthermore, the lighting device of the present invention uses the compound semiconductor light emitting element as described above.

  Therefore, a lighting device with high luminous efficiency can be realized.

1 to 4 are cross-sectional views schematically showing a manufacturing process of a light-emitting diode that is a compound semiconductor light-emitting element according to an embodiment of the present invention. In this embodiment, nitride nanocolumns are formed in a self-forming manner, but the method for forming the nanocolumns is not limited. For example, a nitride nanocolumn may be formed by providing an opening on the substrate surface using a photolithography technique. In this embodiment, it is assumed that nanocolumn growth is performed by metal organic chemical vapor deposition (MOCVD). However, the nanocolumn growth method is not limited to this, and molecular beam epitaxy (MBE). It is well known that nanocolumns can be produced even using an apparatus such as hydride vapor phase epitaxy (HVPE). Hereinafter, an MOCVD apparatus is used unless otherwise specified. In the present embodiment, Si is used as the growth substrate 1, but other substrates such as Al ₂ O ₃ , SiC, SiO ₂ , ZnO, and AlN may be used.

First, the growth substrate 1 is introduced into the MOCVD apparatus, the pressure in the reaction path furnace is set to 76 Torr, and then the surface of the growth substrate 1 is cleaned at 1200 ° C. for 10 minutes. Subsequently, a nucleus for forming the nanocolumn 2 is grown. For this purpose, the substrate temperature is lowered to 500 ° C., which is lower than the normal growth temperature, and trimethylaluminum (TMAl) is supplied as 20 SCCM as the Al material and ammonia (NH ₃ ) is supplied as 2 SLM as the nitrogen material. Grows 25 nm. This low-temperature AlN buffer layer 3 serves as a nucleus for growing the nanocolumns 2.

Next, 2 to 3 μm of n-type GaN is formed as the nanocolumn n-type semiconductor layer 4. For this purpose, while maintaining the pressure in the reactor at 76 Torr, the substrate temperature is increased to 1150 ° C., trimethylgallium (TMGa) is supplied as 20 SCCM as a Ga source, and ammonia (NH ₃ ) is supplied as ₃ SLM as a nitrogen source. Then, 0.03 SCCM of tetraethylsilane (TESi) is supplied as a raw material of Si that becomes an n-type dopant. Si is used as a dopant for obtaining n-conduction, but the dopant is not limited, and Ge may be used, for example. Thus, the nanocolumn n-type semiconductor layer 4 having n-type conductivity can be formed.

Subsequently, the nanocolumn light emitting layer 5 is formed. The nanocolumn light-emitting layer 5 has a quantum well structure, and includes a well layer (InGaN) and a barrier layer (GaN). Furthermore, it was set as the multiple quantum well structure (MQW) which has several wells. The In composition of the well layer and the barrier layer was 17% and 0%, and the thicknesses were 2 nm and 5 nm, respectively. At this time, the substrate temperature is 750 ° C., the pressure in the reactor is 76 Torr, and trimethylindium (TMI) of In source together with trimethylgallium (Ga (CH ₃ ) ₃ ) of Ga source and ammonia (NH ₃ ) of N source. Supply. In this way, the nanocolumn light emitting layer 5 composed of multiple quantum wells can be formed.

Subsequently, 120 nm of p-type GaN is formed as the nanocolumn p-type semiconductor layer 6. Here, the diameter of the nanocolumns 2 is gradually increased so that the nanocolumns 2 are combined with adjacent nanocolumns. The diameter can be increased by reducing the flow rate of ammonia (NH ₃ ). For example, the diameter can be increased by 1.5 SLM, which is half of the growth time of the nanocolumn n-type semiconductor layer 4 and the nanocolumn light emitting layer 5. Also, Mg is used as a dopant for obtaining p-type conduction, and bisethylcyclopentadienyl magnesium (Cp ₂ Mg) is supplied as 20 SCCM as a raw material. Thus, the nanocolumn p-type semiconductor layer 6 can be formed, as shown in FIG.

It should be noted that in this embodiment, when attaching an electrode to the nanocolumn semiconductor produced as described above, the growth substrate 1 side is used as a light extraction surface, and as shown in FIG. After the p-type electrode 7 and the metal reflection layer 8 are sequentially laminated on the substrate 6, the support substrate 9 is further attached. For example, Ni is used for the p-type electrode 7 and Al is used for the metal reflection layer 8 to be deposited to a thickness of 20 mm and 1000 mm, respectively. Ni is a material with low reflectance, but absorption can be reduced (reflection is increased) by reducing the film thickness. The degree of vacuum for vapor deposition is, for example, 6 × 10 ⁻⁶ Torr.

  The support substrate 9 may be made of, for example, CuW, which can make ohmic contact with the p-type electrode 7 and can exhibit a function as a heat sink. The CuW and the metal reflective layer 8 can be joined using, for example, AuSn. That is, after mounting on the CuW on which AuSn is placed so that the metal reflective layer 8 side of the nanocolumn semiconductor is aligned, heating is performed at 300 ° C. with a heater and cooling is performed on the CuW as the support substrate 9. Nanocolumn semiconductors can be attached.

  After that, it should be noted that in the present embodiment, after the growth substrate 1 is removed, the n-type electrode 10 is formed. Here, Si can be etched at high speed in KOH, whereas the nanocolumn 2 is not etched because it contains almost no threading dislocations in the crystal. Therefore, the container containing KOH is heated to 70 ° C., and the growth substrate 1 is immersed in the nanocolumn 2 supported by the support substrate 9 in the container, as shown in FIG. Can be removed.

  On the exposed nanocolumn n-type semiconductor layer 4, as shown in FIG. 4, a transparent n-type electrode 10 made of ITO is formed to a thickness of 100 nm by a vacuum deposition apparatus. At this time, the nanocolumn n-type semiconductor layer 4 is formed to have a height of 2 to 3 μm, and vapor deposition metal enters between the nanocolumns 2 that stand, and the nanocolumn n-type semiconductor layer 4 and the nanocolumn p-type semiconductor layer 6 There is no short circuit between them. Thereafter, an opening is formed in a pattern on the n-type electrode 10 by using a normal photolithography technique, and Au is vapor-deposited by a vacuum evaporation apparatus, and then the resist is removed, whereby the Au pad 11 is formed in a pattern. Can be provided.

  As described above, in the light emitting diode according to the present embodiment, a large number of nanocolumns 2 in which the nanocolumn n-type semiconductor layer 4, the nanocolumn light emitting layer 5, and the nanocolumn p-type semiconductor layer 6 are sequentially stacked are grown on the growth substrate 1. After the nanocolumn 2 is grown on the growth substrate 1 serving as a base for growing the nanocolumn 2 and the p-type electrode 7 is formed on the nanocolumn p-type semiconductor layer 6, A support substrate 9 is bonded onto the p-type electrode 7 to support the nanocolumn 2, and instead the growth substrate 1 is removed so that it is transparent to the wavelength of light emitted from the nanocolumn light emitting layer 5. Since the n-type electrode 10 is bonded to the nanocolumn n-type semiconductor layer 4, the n-type electrode 10 and the p-type electrode are directly connected to the nanocolumn n-type semiconductor layer 4 and the nanocolumn p-type semiconductor layer 6. There would be formed respectively, a conductive substrate, heat dissipation without the need to consider the absorption wavelength can be taken out efficiently light using a simple method.

  Specifically, first, light extraction is performed from the n-type electrode 10 side, so that it is not necessary to form the p-type electrode 7 side to be translucent. Thereby, even if the nanocolumn light emitting layer 5 is formed relatively far from the growth substrate 1 in the nanocolumn 2, that is, the nanocolumn n-type semiconductor layer 4 is formed thicker (higher) than the nanocolumn p-type semiconductor layer 6. Since the support substrate 9 is provided as a heat dissipation means on the p-type electrode 7 side close to the nanocolumn light emitting layer 5, a large current can be injected into the nanocolumn 2, and the light emitting efficiency of the light emitting diode having a large number of nanocolumns 2 Can be fully utilized. In addition, it is not necessary to remove some of the nanocolumns to form an n-type electrode, so that the entire surface of the device can be used for light emission, and current can be injected into each nanocolumn 2 efficiently and evenly. Furthermore, the growth substrate 1 can be made of a material such as Si, which is convenient for growth, such as a cheap material and has a lattice constant close to that of the nanocolumns 2 grown on the growth substrate 1. Nanocolumn 2 can be obtained.

  Further, as described above, in the light emitting diode of the present embodiment, the support substrate 9 provided on the back surface of the p-type electrode 7 close to the nanocolumn light emitting layer 5 in the nanocolumn 2 has a function as a heat sink. The heat dissipation effect can be enhanced, and the support substrate 9 is made of CuW as described above, whereby ohmic contact with the p-type electrode 7 can be obtained, and the injection current can be further increased.

  Furthermore, as described above, the light-emitting diode of the present embodiment further includes the metal reflection layer 8 that reflects the light emitted from the nanocolumn light-emitting layer 5 on the p-type electrode 7. The light leakage to the side 7 is eliminated (the light is not absorbed by the support substrate 9), the light extraction efficiency can be further improved, and the reflection angle by the metal reflection layer 8 is controlled, whereby the n-type electrode 10 A part of the light emitted from the side can be controlled, and the light can be collected in the direction to be extracted. Moreover, since the reflective film is the metal reflective film 8, a relatively high reflectance can be easily obtained. Furthermore, preferably, the metal reflective film 8 is a multilayer film in which a plurality of layers having different refractive indexes are repeatedly laminated, whereby a reflective mirror having a high reflectance can be formed, and a more efficient light emitting diode. Can be realized.

  By using the light-emitting diode configured as described above for the lighting device, a lighting device with high luminous efficiency can be realized, which is preferable.

  Although the above embodiment has been described using a nitride semiconductor (GaN) as an example, the present invention can also be applied to an oxide semiconductor. ZnO which is an oxide semiconductor has extremely excellent characteristics as a light-emitting element. The exciton binding energy is 60 meV, 2 to 3 times that of GaN, the internal quantum efficiency may be higher than that of GaN, and the refractive index is 2, which is higher than the refractive index of GaN of 2.5. It is extremely small and overwhelmingly advantageous in terms of light extraction. Moreover, it is also attractive from a commercial basis that the material itself is inexpensive. Therefore, although the above-described embodiment describes a GaN-based nanocolumn that is a nitride semiconductor, a semiconductor light-emitting element having exactly the same structure is similarly applied to ZnO that is an oxide semiconductor that is similar in crystal structure. Can be produced. The details are as follows.

  Both GaN and ZnO have a hexagonal crystal structure, and the lattice constants of the crystals are close. The band gap is also 3.4 eV for GaN, and 3.3 eV for ZnO, which is also close. Both are direct transition semiconductors. Therefore, if a nanocolumn is formed of GaN, a nanocolumn can be formed of ZnO. As an example, in Literature 1, ZnO nanocolumns (called nanorods in the literature) are formed on a sapphire substrate using MOCVD. (Reference 1: W. l. Park, Y. H. Jun, S. W. Jung and Gyu-Chul Yi Appl. Phys. Lett. 964 (2003)).

It is sectional drawing which shows typically the manufacturing process of the light emitting diode which is a compound semiconductor light emitting element which concerns on one Embodiment of this invention. It is sectional drawing which shows typically the manufacturing process of the light emitting diode which is a compound semiconductor light emitting element which concerns on one Embodiment of this invention. It is sectional drawing which shows typically the manufacturing process of the light emitting diode which is a compound semiconductor light emitting element which concerns on one Embodiment of this invention. It is sectional drawing which shows typically the manufacturing process of the light emitting diode which is a compound semiconductor light emitting element which concerns on one Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Growth substrate 2 Nanocolumn 3 Low temperature AlN buffer layer 4 Nanocolumn n-type semiconductor layer 5 Nanocolumn light emitting layer 6 Nanocolumn p-type semiconductor layer 7 P-type electrode 8 Metal reflective layer 9 Support substrate 10 N-type electrode 11 Au pad

Claims (7)

In a compound semiconductor light-emitting device comprising a plurality of columnar crystal structures in which an n-type compound semiconductor layer, a light-emitting layer, and a p-type compound semiconductor layer are sequentially stacked on a growth substrate,
A p-type electrode formed on the p-type compound semiconductor layer;
A support substrate bonded on the p-type electrode;
A compound semiconductor light emitting device comprising a transparent n-type electrode instead of the growth substrate.   The compound semiconductor light-emitting element according to claim 1, further comprising a reflective layer that reflects light emitted from the light-emitting layer on the p-type electrode.   3. The compound semiconductor light emitting device according to claim 2, wherein the reflective film is made of metal.   3. The compound semiconductor light emitting element according to claim 2, wherein the reflective film is a multilayer film in which a plurality of films having different refractive indexes are repeatedly laminated.   The compound semiconductor light-emitting element according to claim 1, wherein the support substrate also serves as a heat sink.   An illuminating device using the compound semiconductor light emitting element according to claim 1. In a method for manufacturing a compound semiconductor light-emitting element comprising a plurality of columnar crystal structures in which an n-type compound semiconductor layer, a light-emitting layer, and a p-type compound semiconductor layer are sequentially stacked on a growth substrate,
Forming a p-type electrode on the p-type compound semiconductor layer;
Providing a support substrate on the p-type electrode;
Removing the growth substrate;
Forming a light-transmitting n-type electrode on the exposed end surface of the n-type compound semiconductor layer.

Images