JP2008053386A - Device and method for processing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing device and substrate processing method which can prolong a lifetime of a filter without discontinuing an etching work. <P>SOLUTION: The substrate processing device comprises a chemicals tub 102 in which chemicals 101 for treating a substrate are filled, a line 103 for extracting the chemicals from the chemicals tub, multipoint paths La, Lb which have one ends connected to the line 103 via a changeover valve V1 and another ends connected to each other, and a line 104 connected to a confluent part of both the multipoint paths for returning the chemicals passing the multipoint paths to the chemicals tub. Filters 106a, 106b are interposed between the multipoint paths La, Lb; and at an intermediate part between the filters and the one ends of the multipoint paths, bypasses Ba, Bb are provided from one multipoint paths to the other multipoint paths. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing of a semiconductor substrate or the like using a chemical solution, particularly a wet etching apparatus in which an etching solution is circulated and a residue during etching is removed by a filter, and a substrate processing method and a semiconductor manufacturing method using the same. About.

  Currently, in the manufacturing process of a semiconductor integrated circuit, wet etching is widely used to remove an excessive thin film formed on a semiconductor substrate. For example, Patent Document 1 describes a wet etching apparatus that filters an etching solution with a filter provided in a circulation path for circulating the etching solution.

  FIG. 8 shows an example of a schematic configuration of a wet etching apparatus. In this wet etching apparatus, an etching tank 802 that contains an etching solution 801 includes an inner tank 804 and an outer tank 805 separated by a partition wall 803. The inner tank 804 and the outer tank 805 are connected by a circulation path 806. The circulation path 806 is provided with a pump 807 and a filter 808.

  The etching solution 801 in the outer tank 805 is forcibly sent to the filter 808 from the bottom 805a of the outer tank 805 by the pump 807, and the solid residue contained in the etching liquid 801 is removed. When the etching solution 801 that has passed through the filter 808 is sent to the inner tank 804, the etching solution 801 in the inner tank 804 overflows into the outer tank 805, and the circulation continues. By such circulation, the cleanliness of the etching solution 801 in the etching tank 802 is maintained.

  However, if the filter 808 is clogged with residues or precipitates deposited in the circulation path 806, the circulation cannot be performed smoothly, and the cleanliness of the etching solution 801 cannot be maintained. At this time, it was necessary to interrupt the etching operation and replace the filter 808 with a new one.

  FIG. 9 shows another example of the schematic configuration of the wet etching apparatus. In this apparatus, branch paths 901a and 901b are provided in the middle of the circulation path 901, and filters 902a and 902b are arranged in the branch paths 901a and 901, respectively. By opening and closing the valves 903a and 903b provided immediately upstream and downstream of each filter, the etching solution 904 can be circulated through one of the filters 902a and 902b.

  When the etching solution 904 is circulated through one filter, the other filter is blocked from the circulation path. For this reason, in this apparatus, the other filter can be replaced or the filter can be regenerated to a normal state without interrupting the etching operation.

In order to regenerate the filters 902a and 902b, this apparatus has chemical liquid supply paths 906a and 906b for supplying chemical liquids 905a and 905b for dissolving and removing deposits deposited on the filters 902a and 902b to the filters 902a and 902b. is doing.
JP-A-6-275597

  In order to regenerate the filter as described above, a dedicated chemical solution supply path is required in addition to the etching solution circulation path. Further, the chemical solution supply path is required for each filter. Accordingly, the apparatus cost and running cost are increased.

  According to one aspect of the present invention, a chemical tank filled with a chemical for processing a substrate, a first pipe for taking out the chemical from the chemical tank, and one end connected to the first pipe via a switching valve. A second pipe and a third pipe having the other ends connected to each other; and a fourth pipe connected to the other end connecting portion of the second and third pipes to return the chemical solution to the chemical solution tank; A filter is interposed in the second and third pipes, and the chemical solution is passed through the filter in the direction opposite to the circulation direction from the first pipe to the fourth pipe at the intermediate portion between the filter and the one end. Provided is a substrate processing apparatus characterized in that piping for flowing into the substrate is connected.

  According to another aspect of the present invention, a chemical solution tank filled with a chemical solution for processing a substrate, a first pipe for taking out the chemical solution from the chemical solution tank, and one end connected to the first pipe via a switching valve. And second and third pipes whose other ends are connected to each other, and a fourth pipe connected to the other end connecting portion of the second and third pipes to return the chemical liquid to the chemical tank. In addition, a filter is interposed in the second and third pipes, and a first bypass for flowing a chemical solution from the second pipe toward the third pipe in the middle portion of the filter and the one end. And a second bypass for flowing a chemical solution from the third pipe to the second pipe.

  According to still another aspect of the present invention, a chemical solution tank filled with a chemical solution for processing a substrate, a first pipe for taking out the chemical solution from the chemical solution tank, and one end connected to the first pipe via a switching valve. A second pipe connected to the other end of the second pipe, and a fourth pipe connected to the other end connecting portion of the second and third pipes to return the chemical liquid to the chemical tank. A first waste liquid pipe for discharging a chemical solution from the second pipe to the outside at an intermediate portion between the filter and the one end; A substrate processing apparatus is provided, wherein a second waste liquid pipe for discharging the chemical solution from the third pipe to the outside is provided.

  According to still another aspect of the present invention, a substrate processing method or a semiconductor device manufacturing method using the above-described substrate processing apparatus is provided.

  By adopting the above configuration, the chemical liquid flows through the other filter in the direction opposite to the circulation direction from the first pipe to the fourth pipe while the chemical liquid is circulated through one filter. Therefore, it is possible to regenerate the filter without interrupting the operation of processing the substrate with the chemical solution. In addition, since the filter is regenerated using the chemical solution used for substrate processing without using the dedicated chemical solution for filter regeneration, the apparatus cost and running cost can be reduced even when a plurality of filters are used.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
(First embodiment)
FIG. 1 is a diagram showing a schematic configuration of a wet etching apparatus according to the first embodiment. In the apparatus of FIG. 1, a circulation path L that returns from the etching tank 102 containing the etching solution 101 to the etching tank 102 is provided. The circulation path L has a pipe 103 for taking out the etching liquid from the etching tank 102 and a pipe 104 for returning the etching liquid to the etching tank 102. A three-way valve V1 is disposed at the end of the pipe 103 in the middle of the circulation path L, and branch paths La and Lb are provided by the three-way valve V1. The other ends of the pipes of the branch paths La and Lb to which the three-way valve V <b> 1 is connected at one end merge and are connected to the pipe 104. The etching liquid circulation path L is switched by the three-way valve V <b> 1 between a flow path through the pipe 103, the branch path La, and the pipe 104 and a flow path through the pipe 103, the branch path Lb, and the pipe 104.

  Pumps 105a and 105b, filters 106a and 106b, and valves Va2 and Vb2 are interposed in the branch paths La and Lb in this order from the upstream side of the circulation path L. Further, the branch paths La and Lb are connected to each other by bypass Ba and Bb. The bypass Ba connects the intermediate portion between the pump 105a and the filter 106a in the branch passage La and the intermediate portion between the three-way valve V1 and the pump 105b in the branch passage Lb. The bypass Bb connects the intermediate portion between the pump 105b and the filter 106b in the branch passage Lb and the intermediate portion between the three-way valve V1 and the pump 105a in the branch passage La.

  Each bypass Ba, Bb is provided with valves Va1, Vb1 and check valves 107a, 107b. The check valves 107a, 107b restrict the flow of the etching solution in one direction. That is, if the valves Va1 and Vb1 are open, the etching solution flowing through the filters 106a and 106b in the direction opposite to the circulation direction from the pipe 103 to the pipe 104 passes through the bypass Ba and Bb and joins the branch paths Lb and La. .

  In this apparatus, in a state where the etching of the semiconductor substrate can be performed using the etching tank 102, the solid residue is removed from the etching solution using either the filter 106a or 106b. FIG. 2 shows the flow of the etching solution when the filter 106b is used. In this case, the three-way valve V1 is opened so as to flow from the pipe 103 to the branch path Lb, the valve Vb1 is closed, and the pump 105b is operated with the remaining valves opened. As a result, the etching solution passes from the pipe 103 through the branch path Lb, is pumped by the pump 105b, and returns to the etching tank 102 through one filter 106b.

  In this state, if a large number of semiconductor substrates are continuously etched in the etching tank 102, residues, precipitates, and the like in the etching solution adhere to and accumulate on one filter 106b, and the filter 106b is clogged. I will. When the filter 106b is clogged, the circulation of the etching solution 101 stops and the residue stays in the etching tank 102. This residue adheres to the semiconductor substrate, which is the material to be etched, and becomes a foreign substance, resulting in poor etching. .

  In order to avoid this, the filter used for filtration of the etching solution is changed to the other filter before the filter used at that time is clogged and the circulation of the etching solution 101 is stopped. Although not particularly shown, a pressure gauge inserted immediately before the filter in the circulation path can confirm the progress of clogging of the filter by the increase in the chemical pressure. By monitoring the pressure displayed and output by the pressure gauge, it is possible to identify before the circulation of the etching solution 101 is stopped due to clogging of the filter. The opening / closing and switching of the valve can be performed by a control circuit (not shown) based on the monitoring signal.

  FIG. 3 shows the flow of the etching solution when the filter 106a is used. When the pressure of the etching solution 101 reaches a predetermined value, the three-way valve V1 is opened to flow from the pipe 103 to the branch path La, the valve Vb1 is opened, the valve Va1 that has been opened is closed, and the remaining valves are opened. In this state, the pump 105b is stopped and the pump 105a is operated.

  As a result, the etching solution passes from the pipe 103 through the branch path La and returns to the etching tank 102 through the filter 106a which is pumped by the pump 105a and attached to the branch path La.

  Further, the filter 106b is washed while the etching solution is filtered by the filter 106a. A part of the etching solution that has passed through the branch path La by the pumping of the pump 105a does not flow to the etching tank 102 through the pipe 104 but enters the branch path Lb and flows through the filter 106b in the direction opposite to the circulation direction. That is, the etching solution that has passed through the filter 106a passes through the valve Vb2, the filter 106b, the valve Vb1, and the check valve 107b, joins the branch path La, and can flow toward the pump 105a.

  By providing the bypass Bb from the branch path Lb to the branch path La in this way, the pump 105a is used to circulate the etching solution 101 with respect to the etching tank 102, and the etching solution 101 circulates the filter 106b. A flow path that passes in the opposite direction is formed. As the etching solution flows through the filter 106b in the branch path Lb in the direction opposite to the circulation direction, deposits clogged in the filter 106b are removed, that is, the filter 106b can be returned to a normal state by reverse cleaning of the filter 106b.

  Thereafter, the etching is continued in this manner, and before the filter 106a is clogged, the etching liquid circulation path is switched to the branch path Lb side as in the beginning, and the solid residue is removed from the etching liquid by the filter 106b. . By providing the bypass Ba, the etching solution that has passed through the filter 106b passes through the filter 106a in the direction opposite to the circulation direction while the residue is removed by the filter 106b. 106a returns to a normal state.

  According to the first embodiment as described above, the filter is back-washed by the pressure of the circulation path of the etching solution 101. Instead of monitoring the pressure, the operation time of the pump 105a and the pump 105b is determined by, for example, the processing time for each processing of the workpiece, that is, the processing time of about 1% of the filter life until the filter is clogged. Then, when the time comes, the circulation path may be automatically switched to the branch path La side or the branch path Lb side to return the filters 106a and 106b to the normal state.

  Thereby, filter removal and normal operation can be performed without removing deposits clogged in the filter without dissolving with a dedicated chemical solution and without stopping the wet etching apparatus at all. Therefore, the etching operation is not interrupted, and the waste of discarding the clogged filter can be eliminated. Furthermore, even if there are a plurality of filters, there is no need for a dedicated chemical solution for dissolving and removing the filter deposits and its supply path, so that the apparatus cost and running cost can be reduced. Therefore, by using this substrate processing apparatus, it becomes possible to manufacture the semiconductor device efficiently and inexpensively.

  Further, when the etching solution flows through the circulation path L or when it passes through the bypasses Ba and Bb, it is pumped by any one of the pumps, so that the etching solution flows smoothly in this piping system. Further, since two pumps are provided, even if one of the pumps has a malfunction or failure, it is possible to circulate the etching solution using the other pump. For this reason, the etching operation can be continued even when the pump is repaired or replaced.

In the chemical circulation method according to the present embodiment, foreign substances and particles in the etching chemical liquid trapped in one filter are trapped again by the other filter in the reverse cleaning process, so back cleaning is performed for the alternate filters. Repeating will increase the amount of foreign matter and particles to be trapped. Therefore, two filters must be replaced after repeated backwashing a predetermined number of times, but until then, the filter is automatically backwashed with the etching device running as described above, greatly increasing the number of maintenance. Can be reduced.
(Second embodiment)
FIG. 4 is a diagram showing a schematic configuration of a wet etching apparatus according to the second embodiment. The same elements as those of the wet etching apparatus according to the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  In this apparatus, the difference from the apparatus shown in FIG. 1 is that a check valve installed in the middle of each of the pumps 105a and 105b and the filters 106a and 106b in each of the circulation paths La and Lb branched from the circulation path L. A waste liquid tank 401 for waste of the etching liquid is provided at the tip of 107a and 107b. In the apparatus shown in FIG. 1, the bypasses Ba and Bb are used to flow the etching solution 101 through the filters 106a and 106b in the direction opposite to the circulation direction. However, in this apparatus, the waste liquid tubes 402a and 402b are used. Thus, the valves Va1 and Vb1 and the check valves 107a and 107b are provided in the waste liquid pipes 402a and 402b. This apparatus is also different from the wet etching apparatus according to the first embodiment in that a chemical liquid supply tank 403 for replenishing the etching liquid 101 and a chemical liquid supply path L0 are provided in the etching tank 102.

  This apparatus also removes solid residues from the etching solution 101 using either the filter 106a or 106b during wet etching of the semiconductor substrate. FIG. 5 shows the flow of the etching solution when the filter 106b is used. In this case, the three-way valve V1 is opened so as to flow from the pipe 103 to the branch path Lb, the valve Vb1 is closed, and the pump 105b is operated with the remaining valves opened. As a result, the etching solution passes from the pipe 103 through the branch path Lb, is pumped by the pump 105b, passes through one filter 106b, and returns to the etching tank 102 through the pipe 104.

  When a large number of semiconductor substrates are continuously etched in the etching tank 102, residues, precipitates, and the like in the etching solution adhere to and accumulate on one filter 106b, and the filter 106b eventually becomes clogged. When the filter 106b is clogged, the circulation of the etching solution 101 is stopped, and the residue stays in the etching tank 102. Therefore, the residue adheres to the material to be etched and becomes a foreign substance, resulting in poor etching.

  Therefore, although not particularly illustrated, the pressure of the pressure gauge inserted in the circulation path is monitored to switch the filter used to remove the residue in the etching solution before the etching solution 101 circulates due to clogging of the filter. . FIG. 6 shows the flow of the etching solution when the filter used for filtering the etching solution is switched to the filter 106a. In this case, the three-way valve V1 is opened so as to flow from the pipe 103 to the branch path La, the valve Vb1 is opened, the valve Va1 is closed, and the pump 105b is stopped and the pump 105a is operated with the remaining valves opened.

  Instead of monitoring the pressure, the three-way valve V1 is opened so as to flow from the pipe 103 to the branch path La. The processing time for each processing of the processing object, that is, about 1% of the filter life causing the filter to be clogged. You may perform after processing time passes.

  As a result, the flow path of the etching solution is switched, and the etching solution passes through the branch line La from the pipe 103, is pumped by the pump 105a, and returns to the etching tank 102 through the filter 106a. Residues in the etching solution are removed by the filter 106a.

  Thus, when the solid residue is removed from the etching solution by the filter 106a, the filter 106b is washed. A portion of the etching solution that has passed through the branch path Lb does not flow to the etching tank 102 through the pipe 104 but enters the branch path Lb and flows through the filter 106b in a direction opposite to the circulation direction. That is, the etching solution flows in the direction of the valve Vb2, the filter 106b, the valve Vb1, and the check valve 107b and is discharged to the waste liquid tank 401. The deposit clogged in the filter 106b is removed by the chemical solution flowing in the direction opposite to the circulation direction of the filter 106b in the branch path Lb, that is, the deposit deposited on the filter 106b by the back washing of the filter 106b is discharged to remove the filter. Undo the ability.

  This state is maintained for a certain time, and when the capacity of the filter 106b returns to the original state, the valve Vb1 is closed and the discharge of the chemical solution is stopped. The chemical solution is circulated through the branch path La to continue the etching process. The cleanliness of the etching liquid 101 in the etching tank 102 is ensured by discharging the etching liquid 101 whose cleanliness has decreased due to the deposit removed from the filter 106b by the reverse cleaning of the filter 106b from the branch path Lb to the waste liquid tank 401. . Further, the same amount of the etching solution 101 as the discharged etching solution 101 is replenished from the chemical solution supply tank 403 to the etching tank 102 through the chemical solution supply path L0.

  Thereafter, the etching is continued in this manner, and before the filter 106a is clogged, the etching liquid circulation path is switched to the branch path Lb side as in the beginning, and the solid residue is removed from the etching liquid by the filter 106b. . In the state described with reference to FIG. 5, a part of the etching solution that has passed through the branch path La does not enter the pipe 104 and flows through the filter 106a in the direction opposite to the circulation direction. That is, the valve Va2, the filter 106a, the valve Va1, and the check valve 107a flow in this order and are discharged to the waste liquid tank 401. At this time, regardless of whether or not the pump 105a is operating, the chemical liquid can be flowed only in one direction, so that no flow is returned to the branch path Lb.

  As a result, in the same manner as in the above operation, the material deposited and deposited on the filter 106a is discharged, and the capacity of the filter is restored. Filter removal and normal operation can be performed without stopping the wet etching apparatus at all without removing deposits clogging the filter by dissolving with a dedicated chemical solution. For this reason, there is no interruption of the etching operation, and the waste of discarding the filter can be eliminated.

  In the above description, the filter is regenerated without stopping the wet etching apparatus. However, when the filter member in the filter becomes clogged, the filter member surface is subjected to an excessive load due to the circulation pressure of the chemical solution. The part which a member breaks arises. By repeating the regenerating operation, when a portion that is damaged over the entire surface of the filter member in the filter is finally generated, it is necessary to lose the original filter capability and replace it with a new one. Also at this time, conversion can be performed without stopping the apparatus.

  For example, the three-way valve V1 is opened to flow from the pipe 103 to the branch path La, the valves Va1 and Vb2 are closed, and the remaining valves are opened to operate the pump 105a. As a result, the etching solution passes from the pipe 103 through the branch path La, is pumped by the pump 105a, and circulates through the filter 106a to the etching tank 102. At this time, one of the branch paths Lb has no chemical solution circulation, and the filter 106b can be removed and replaced with a new filter 106b.

When replacing the filter 106a, the three-way valve V1 is opened to flow from the pipe 103 to the branch path Lb, the valves Vb1 and Va2 are closed, and the pump 105b is operated with the remaining valves open. As a result, the etching solution passes from the pipe 103 through the branch path Lb, is pumped by the pump 105b, and circulates through the one filter 106b to the etching tank 102. At this time, one branch passage La has no circulation of the chemical solution, and the filter 106a can be removed and replaced with a new filter 106a.
(Third embodiment)
FIG. 7 is a diagram showing a schematic configuration of a wet etching apparatus according to the third embodiment. The wet etching apparatus according to the third embodiment is obtained by changing a part of the wet etching apparatus according to the first embodiment so that the etching solution can be drained in the same manner as the wet etching apparatus according to the second embodiment. is there. The same elements as those of the wet etching apparatus according to each embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  In the apparatus according to the present embodiment, a three-way valve 701 is disposed between a connection portion between the bypass Bb and the branch path La and the check valve 107b. The bypass Bb includes a pipe 702 provided with a valve Vb1 and a check valve 107b, and a pipe 703 having one end connected to the pipe 702 by a three-way valve 701 and the other end connected to the branch path La. In addition to the pipes 702 and 703, a waste liquid pipe 704 that discharges the etching liquid 101 to the waste liquid tank 401 is connected to the three-way valve 701. The three-way valve 701 switches the exit path of the etching solution 101 flowing from the pipe 702 to the pipe 703 or the pipe 704. That is, the three-way valve 701 can be used to select whether the etching solution 101 flowing through the pipe 702 is flowed to the branch path La or discharged to the waste liquid tank 401.

  In the wet etching apparatus according to the first embodiment, as described above, foreign substances, particles, etc. in the etching chemical liquid trapped in one filter are trapped again in the other filter in the reverse cleaning process. For this reason, if the regeneration of the filter by backwashing is repeated, the interval at which the filter is backwashed gradually decreases.

  Therefore, in the wet etching apparatus according to the third embodiment, the switching number of the three-way valve V1 is counted, and when the count reaches a predetermined number, the outlet of the three-way valve 701 is switched from the pipe 703 to the pipe 704. Then, the etching solution 101 is discharged into the waste solution tank 401.

  As a result, the deposit that has been deposited on the filter 106b until then is removed from the circulation system, so that it is possible to suppress the interval between the backwashing of the filter (switching the three-way valve V1) from being shortened. it can.

  When the etching solution 101 is discharged, the same amount of the etching solution 101 is replenished from the chemical solution supply tank 403 to the etching tank 102 through the chemical solution supply path L0 as in the second embodiment. In the wet etching apparatus according to the third embodiment, unlike the second embodiment, the etching solution 101 is drained only when the outlet of the three-way valve 701 is switched to the pipe 704.

  In the above description, the three-way valve 701 is controlled based on the number of times the three-way valve V1 is switched. However, the present invention is not limited to this. For example, when the switching timing of the three-way valve V1 is determined based on the monitoring pressure, the outlet of the three-way valve 701 is switched to the pipe 704 when the switching interval of the three-way valve V1 becomes a predetermined period or less. May be.

  In the wet etching apparatus according to the present embodiment, the waste liquid pipe is connected to the bypass Bb via the three-way valve. However, the waste liquid pipe may be connected to the bypass Ba or both bypasses via the three-way valve. .

  Further, as in the third embodiment, instead of using the bypass as a waste liquid path, one of the bypasses may be replaced with a waste liquid pipe.

  The present invention is not limited to the embodiment described above, and various modifications and applications are possible within the scope of the effects of the present invention. For example, in the above-described embodiment, the present invention is used for wet etching, but it can also be used for plating and other substrate processing.

  The substrate processing apparatus and the substrate processing method having the above-described structure are not limited to the field of semiconductor integrated circuit manufacturing, but are useful because they can be applied to the field aimed at effectively using a processing chemical.

The figure which shows schematic structure of the wet etching apparatus by 1st Embodiment The figure for demonstrating the flow of the etching liquid in the wet etching apparatus by 1st Embodiment The other figure for demonstrating the flow of the etching liquid in the wet etching apparatus by 1st Embodiment The figure which shows schematic structure of the wet etching apparatus by 2nd Embodiment. The figure for demonstrating the flow of the etching liquid in the wet etching apparatus by 2nd Embodiment The other figure for demonstrating the flow of the etching liquid in the wet etching apparatus by 2nd Embodiment The figure which shows schematic structure of the wet etching apparatus by 3rd Embodiment The figure which shows an example of schematic structure of the conventional wet etching apparatus The figure which shows another example about schematic structure of the conventional wet etching apparatus

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Etching liquid 102 Etching tank 103, 104 Circulation piping 105a, 105b Pump 106a, 106b Filter 107a, 107b Check valve 401 Waste liquid tank 402a, 402b, 704 Waste liquid pipe 403 Chemical liquid supply tank 701 Three-way valves 702, 703 on the bypass Bypass pipe L Circulation path La, Lb Branch path Ba, Bb Bypass L0 Chemical solution supply path V1 Three-way valve Va1, Va2, Vb1, Vb2 valve on the circulation path

Claims (8)

A chemical bath filled with a chemical for processing the substrate;
A first pipe for taking out the chemical from the chemical tank;
Second and third pipes having one end connected to the first pipe via a switching valve and the other end connected to each other;
A second pipe connected to the other end connection portion of the second and third pipes and returning the chemical liquid to the chemical tank;
A filter is interposed in the second and third pipes,
In the middle part of the filter and the one end, a pipe for flowing the chemical solution through the filter in a direction opposite to a circulation direction from the first pipe to the fourth pipe is connected. Substrate processing equipment. A chemical bath filled with a chemical for processing the substrate;
A first pipe for taking out the chemical from the chemical tank;
Second and third pipes having one end connected to the first pipe via a switching valve and the other end connected to each other;
A second pipe connected to the other end connection portion of the second and third pipes and returning the chemical liquid to the chemical tank;
A filter is interposed in the second and third pipes,
In the intermediate portion between the filter and the one end, a first bypass for flowing a chemical from the second pipe toward the third pipe and a chemical from the third pipe to the second pipe are flowed. And a second bypass for the substrate processing apparatus. A chemical bath filled with a chemical for processing the substrate;
A first pipe for taking out the chemical from the chemical tank;
Second and third pipes having one end connected to the first pipe via a switching valve and the other end connected to each other;
A second pipe connected to the other end connection portion of the second and third pipes and returning the chemical liquid to the chemical tank;
A filter is interposed in the second and third pipes,
In the middle part of the filter and the one end, a first waste liquid pipe for discharging the chemical liquid from the second pipe to the outside, and a second waste liquid for discharging the chemical liquid from the third pipe to the outside A substrate processing apparatus comprising a tube.   The substrate processing apparatus according to claim 3, further comprising a chemical solution supply tank for replenishing the chemical solution tank with the chemical solution. In the substrate processing method which processes a board | substrate using the substrate processing apparatus of Claim 2,
A substrate processing method, wherein when a chemical solution is circulated through one filter, the chemical solution is caused to flow through the other filter in a direction opposite to the circulation direction. In the substrate processing method which processes a board | substrate using the substrate processing apparatus of Claim 3,
A substrate processing method in which when a chemical solution is circulated through one filter, the chemical solution is supplied to the other filter in a direction opposite to the circulation direction, and the chemical solution that has passed through the other filter is discharged to the outside.   The substrate processing method according to claim 6, wherein when a certain time has elapsed after the discharge of the chemical solution that has passed through the other filter, the discharge is stopped and the circulation of the chemical solution to the one filter is continued. A method for manufacturing a semiconductor device using the substrate processing apparatus according to claim 1.

Images