JP2007158194A - Wiring board, semiconductor device using same, and method of manufacturing them - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a means for suppressing damage or a break in wiring conductors caused by ultrasonic vibration or the like when the wiring conductors on a flexible insulating substrate are joined to element electrodes of a semiconductor element via projected electrodes in a structure having the insulating substrate and the semiconductor element. <P>SOLUTION: A wiring board 19 has an insulating substrate 10, a plurality of first wiring conductors 11 provided on the substrate, first projected electrodes 13 provided to the first wiring conductors, and one or more second wiring conductors 12 provided to be adjacent to the first wiring conductors outside thereof. A semiconductor chip 18 has a semiconductor element 20, element electrodes 21 provided on the element, and second projected electrodes 22 provided on the element electrodes. When the first projected electrodes of the wiring board are joined to the second projected electrodes of the semiconductor chip to be opposed to each other, electric connection from the first wiring conductors to the semiconductor element is attained. The second wiring conductors are insulated from the second projected electrodes and the semiconductor element because a gap is provided therebetween. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a wiring board formed using a flexible insulating base material such as a tape carrier board, a semiconductor device using the wiring board, and a method for manufacturing the same.

  TCP (Tape Carrier Package) is known as a type of package module using a tape carrier substrate. TCP is mainly used as a driving LSI package for a flat panel display (see, for example, Patent Document 1). FIG. 7 shows an example of TCP, and FIG. 7 (a) is a plan view thereof. FIG. 7B is a cross-sectional view taken along line C-C ′ in FIG. 7A, and FIG. 7C is a cross-sectional view taken along line D-D ′ in FIG.

  As shown to Fig.7 (a), TCP is produced using the insulating base material 1 which has flexibility. A device hole 2 is formed in the insulating base 1, and a first conductor wiring 3 and a second conductor wiring 4 are provided along the device hole 2, and ends of the first and second conductor wirings 3 and 4. A protruding electrode 5 is formed on the part. The semiconductor element 6 is disposed in the device hole 2.

  The cross-sectional view of FIG. 7B shows an enlarged connection portion between the semiconductor element 6 and the first conductor wiring 3. As shown in FIG. 7B, the plurality of element electrodes 7 formed on the semiconductor element 6 and the protruding electrodes 5 of the first conductor wiring 3 are joined, so that the semiconductor element 6 includes the first element electrode 7. And it is mounted on the insulating substrate 1 in a form supported by the second conductor wirings 3 and 4. A protective film 8 is formed around the element electrode 7 on the semiconductor element 6, and the bonding surface of the semiconductor element 6 and the first and second conductor wirings 3, 4 in the device hole 2 are sealed with a sealing material 9. It is protected by

  The width of the second conductor wiring 4 is set to be thicker than that of the first conductor wiring 3, and one or more second conductor wirings 4 are arranged at the end. Thereby, the connection strength with the protruding electrode 5 is enhanced, and the first conductor wiring 3 or the second conductor wiring 4 is not easily damaged or disconnected due to thermal stress. Further, as shown in FIG. 7C, the second conductor wiring 4 is physically connected to the semiconductor element 6 but is not electrically connected, so that the second conductor wiring 4 is damaged. Even if a disconnection or the like occurs, the function of the semiconductor device is not impaired.

  As necessary, a metal plating film and a solder resist layer that is an insulating resin are formed on the first conductor wiring 3 or the second conductor wiring 4. Generally, a polyimide film is used as the material of the insulating base material 1, and copper is used as the material of the first conductor wiring 3 and the second conductor wiring 4.

Such TCPs are required to be made thinner as the cost is reduced. In recent years, TCPs using a thin tape substrate of 50 μm or less have been used.
JP 2003-197690 A

  However, the following problems occur in a semiconductor device having a structure in which the element electrode 7 of the semiconductor element 6 is electrically connected to the conductor wiring 3 on the insulating substrate 1 via the protruding electrode 5. That is, when a flexible film is used as the insulating substrate 1 and an ultrasonic wave is used for bonding the protruding electrode 5 and the element electrode 7, the vibration of the ultrasonic wave applied from the semiconductor element 6 via the protruding electrode 5 The film 6 is deformed and stress is applied to the conductor wiring 3, causing a problem that the conductor wiring 3 joined to the protruding electrode 5 is broken or disconnected.

  In the conventional example, the bonding strength between the protruding electrode 5 and the first conductor wiring 3 and the second conductor wiring 4 is enhanced. However, the film 6 is deformed and stress is applied to the conductor wiring 3. As a countermeasure against breakage or disconnection of the conductor wiring 3 or the second conductor wiring 4, it was not sufficiently effective.

  In the present invention, when the semiconductor element is mounted on the wiring board, even if the ultrasonic vibration is used for joining the protruding electrode and the element electrode, the insulating base material is deformed by the ultrasonic vibration and stress is applied to the conductor wiring. An object of the present invention is to provide a wiring board capable of suppressing breakage or disconnection of conductor wiring due to the above, a semiconductor device using the wiring board, and a manufacturing method thereof.

  In order to solve the above problems, a wiring board of the present invention includes a flexible insulating base, a plurality of first conductor wirings arranged in alignment on the insulating base, and the first A first protruding electrode provided on the first conductor wiring, and one or more second conductor wirings provided adjacent to the outer end side in a direction perpendicular to the longitudinal direction of the first conductor wiring, It is provided with.

  The semiconductor device of the present invention includes a flexible insulating base, a plurality of first conductor wirings arranged in alignment on the insulating base, and a first protrusion provided on the first conductor wiring. A wiring substrate having an electrode and one or more second conductor wirings provided adjacent to each other on the outer end side in a direction perpendicular to the longitudinal direction of the first conductor wiring; a semiconductor element; and the semiconductor element A semiconductor chip having a device electrode provided thereon and a second protruding electrode provided on the device electrode, wherein the semiconductor chip is mounted on the wiring substrate, and the first protrusion of the wiring substrate The electrode and the second projecting electrode of the semiconductor chip are bonded to face each other, so that the first conductor wiring to the semiconductor element are electrically connected, and the second conductor wiring is The second protruding electrode and the A gap is provided between the conductor elements, characterized in that it is insulated.

  The method for manufacturing a semiconductor device of the present invention includes a flexible insulating base, a plurality of first conductor wirings arranged in alignment on the insulating base, and a first conductor wiring provided on the first conductor wiring. Preparing a wiring board having one protruding electrode and one or more second conductor wirings provided adjacent to each other on the outer end side in a direction perpendicular to the longitudinal direction of the first conductor wiring; Preparing a semiconductor chip having a semiconductor element, an element electrode provided on the semiconductor element, and a second protruding electrode provided on the element electrode, and the first conductor wiring of the insulating substrate The surface on which the second conductor wiring is formed and the surface on which the element electrodes of the semiconductor element are arranged are opposed to each other, and the semiconductor element is placed on the insulating substrate, and the semiconductor The length of the first conductor wiring via the element Applying ultrasonic vibration that vibrates in the direction, and ultrasonically joining the first protruding electrode and the second protruding electrode to electrically connect the first conductor wiring to the semiconductor element; It is characterized by including.

  According to the configuration of the wiring board, the insulating base is reinforced by forming the second conductive wiring separately from the first conductive wiring on the insulating base, and the insulating base is deformed to become the conductive wiring. Damage or disconnection of the first conductor wiring or the second conductor wiring due to the stress can be prevented.

  According to the configuration of the semiconductor device, the insulating base is reinforced by forming the second conductor wiring separately from the first conductor wiring on the insulating base, and ultrasonic bonding between the wiring board and the semiconductor chip is performed. In this case, it is possible to prevent damage or disconnection of the first conductor wiring or the second conductor wiring due to the deformation of the insulating base material and stress applied to the conductor wiring.

  According to the method for manufacturing a semiconductor device, since the direction of ultrasonic vibration is the same as that of the first conductor wiring and the second conductor wiring, deformation of the first conductor wiring is suppressed by the second conductor wiring, It is possible to prevent the first conductor wiring from being damaged or cut.

  In the wiring board of the present invention, it is preferable that the width of the second conductor wiring is wider than the width of the first conductor wiring. According to this configuration, since the width of the second conductor wiring is wide, the adhesion between the insulating base material and the second conductor wiring is improved, the deformation of the insulating base material is restrained, and the stress applied to the conductor wiring Decreases, making disconnection difficult. Further, it is possible to reduce problems such as disconnection easily when the wiring width becomes narrower than a predetermined wiring width due to wiring width variation in wiring width at the time of wiring formation.

  In the semiconductor device of the present invention, a third protruding electrode is provided on the second conductor wiring, and the element electrode of the semiconductor element at a position facing the third protruding electrode is positioned on the element electrode. It can be set as the structure where the 2 protruding electrode is not provided. According to this configuration, by forming the third protruding electrode, the adhesion between the sealing material and the third protruding electrode is improved when the sealing material is formed, and the reliability of the semiconductor device is improved. be able to.

  Embodiments of the present invention will be described below in detail with reference to the drawings.

(Embodiment 1)
FIG. 1 is a plan view showing a configuration of a wiring board used in the semiconductor device according to the first embodiment of the present invention.

  The wiring board shown in FIG. 1A includes a flexible insulating base material 10, a plurality of first conductor wirings 11 arranged in alignment on the insulating base material 10, and a first conductor wiring 11. And one or more second conductor wirings 12 provided so as to be adjacent to the outer ends in the direction perpendicular to the longitudinal direction. A first protruding electrode 13 is provided on the first conductor wiring 11.

  As described above, the insulating substrate 10 is reinforced by forming the second conductor wiring 12 separately from the first conductor wiring 11 on the insulating substrate 10. Therefore, it is possible to prevent the first conductor wiring 11 or the second conductor wiring 12 from being damaged or disconnected due to the stress applied to the insulating base material 10, and to improve the reliability of the wiring board.

  The wiring board according to the first embodiment of the present invention is not limited to the configuration as shown in FIG. 1A, and can be modified to various configurations without departing from the gist of the embodiment. For example, a configuration in which two second conductor wires 12 facing each other in the longitudinal direction of FIG. 1A are connected to form one second conductor wire 14 as shown in FIG. 1B is used. Can do. Alternatively, as shown in FIG. 1C, the second conductor wiring 15 may be bent into a “<” shape. Further, as shown in FIG. 1D, the width of the portion of the second conductor wiring 16 corresponding to the first protruding electrode 13 at the position in the longitudinal direction may be increased. In addition, various shapes are conceivable, such as a rounded bent portion.

(Embodiment 2)
FIG. 2 is a plan view showing a configuration of a wiring board used in the semiconductor device according to the second embodiment of the present invention. 2, the same components as those of the wiring board of FIG. 1 are denoted by the same reference numerals, and the description thereof will not be repeated.

  In the present embodiment, the second conductor wiring 17 is formed to be wider than the first conductor wiring 11.

  When the width of the second conductor wiring 17 is larger than that of the first conductor wiring 11, the adhesion between the insulating substrate 10 and the second conductor wiring 17 is further improved. As a result, it becomes easy to avoid breakage or disconnection due to deformation of the insulating base material 10 and stress applied to the first conductor wiring 11 or the second conductor wiring 17, thereby further improving the reliability of the wiring board. it can.

(Embodiment 3)
A semiconductor device according to Embodiment 3 of the present invention is shown in FIG. 3A is a plan view of the semiconductor device, FIG. 3B is a cross-sectional view taken along line AA ′ of FIG. 3A, and FIG. 3C is a cross-sectional view taken along line BB ′ of FIG. It is. The wiring board used in this semiconductor device is the same as the wiring board of FIG. 1, and the same components are denoted by the same reference numerals, and the description thereof will not be repeated.

  3B and 3C show the configurations of the semiconductor chip 18 and the wiring substrate 19 that constitute the semiconductor device.

  The semiconductor chip 18 has a configuration in which a second protruding electrode 22 is provided on an element electrode 21 formed on the semiconductor element 20, and the periphery of the second protruding electrode 22 is covered with a protective film 23. The second protruding electrode 22 is joined to the first protruding electrode 13 provided on the first conductor wiring 11. In the wiring board 19, the second conductor wiring 12 is formed adjacent to the outer ends in the direction perpendicular to the longitudinal direction of the first conductor wiring 11 in order to reinforce the insulating base material 10 itself. However, the second protruding electrode 22 is not provided on the element electrode 21 at a position facing the second conductor wiring 12. A region on the wiring substrate 19 where the semiconductor chip 18 is mounted is sealed with a sealing material 24.

  The first protruding electrode 13 on the wiring board 19 side is formed so as to cover the upper surface and both side surfaces of the first conductor wiring 11 on the insulating base material 10. The first conductor wiring 11 on the insulating substrate 10 is electrically connected to the element electrode 21 on the semiconductor element 20 by joining the first protruding electrode 13 and the second protruding electrode 22. Further, the second protruding electrode 22 is joined in a state of being buried in the first protruding electrode 13 formed so as to cover the upper surface and both side surfaces of the first conductor wiring 11, and the semiconductor element 20 and the insulating base material 10. Is fixed by a sealing material 24.

  As described above, the second conductor wiring 12 for reinforcement is formed on the insulating base material 10, and the first protruding electrode 13 on the wiring board 19 side and the second protruding electrode 22 on the semiconductor chip 18 side are formed. By being joined, the same effect as the first embodiment can be obtained. In addition, there is no protruding electrode on the second conductor wiring 12 and there is a physical gap between the second conductor wiring 12 and the semiconductor chip 18. The fluidity is improved and the reliability of the semiconductor device can be improved.

(Embodiment 4)
FIG. 4 is a cross-sectional view showing the semiconductor device according to the fourth embodiment. The same components as those of the semiconductor device according to the third embodiment shown in FIG.

  In the present embodiment, the configuration of the wiring board 25 is slightly different from that in the third embodiment. That is, in the wiring board 19 of the third embodiment, the protruding electrode is not provided on the second conductor wiring 12 (FIG. 3B), whereas in the wiring board 25 of the present embodiment, the second wiring is provided. A third protruding electrode 26 is provided on the conductor wiring 12. On the other hand, in the semiconductor chip 18, the second protruding electrode 22 is not provided on the element electrode 21 at a position facing the third protruding electrode 26.

  According to the above configuration, the effect of suppressing breakage, disconnection, and the like due to the deformation of the insulating base material 10 and the stress applied to the first conductor wiring 11 or the second conductor wiring 12 is further improved. Can improve the reliability.

(Embodiment 5)
FIG. 5 is a cross-sectional view illustrating the method of manufacturing the semiconductor device in the fifth embodiment. This figure illustrates the case where the semiconductor device according to the third embodiment is manufactured as an example. Therefore, the same components as those shown in FIG. 3 are denoted by the same reference numerals and the description is repeated. Is omitted.

  As shown in FIG. 5A, a plurality of first conductor wirings 11 are provided on the insulating base material 10 and are adjacent to the outer ends in the direction perpendicular to the longitudinal direction of the first conductor wirings 11. As described above, a wiring board 19 in which one or more second conductor wirings 12 are provided and the first protruding electrodes 13 are provided on the first conductor wirings 11 is prepared.

  Further, as shown in FIG. 5B, an element electrode 21 is provided on the semiconductor element 20, and a protective film 23 is provided on the element electrode 21 so as to cover the semiconductor element 20, thereby protecting the element electrode 21. The semiconductor chip 18 in which the second protruding electrode 22 is embedded in the opening formed in the film 23 is prepared.

  Next, as illustrated in FIG. 5C, the surface of the insulating base 10 on which the first conductor wiring 11 is formed and the surface on which the element electrodes 21 of the semiconductor element 20 are arranged are opposed to each other. In a state where the alignment between the first protruding electrode 13 and the second protruding electrode 22 is completed, the back surface of the semiconductor element 20 (see FIG. ) Gradually increases the bonding load from the upper surface) to the semiconductor element 20. As a result, the second protruding electrode 22 is bonded to the first protruding electrode 13 while being buried. As a result, the first conductor wiring 11 to the semiconductor element 20 can be electrically connected.

  Here, when the first protruding electrode 13 and the second protruding electrode 22 are bonded, ultrasonic vibration that vibrates in the longitudinal direction of the first conductor wiring 11 or the second conductor wiring 12 is applied to the bonding tool 27. By generating it, the first protruding electrode 13 and the second protruding electrode 22 can be joined more quickly and reliably. Further, since the vibration direction of the bonding tool 27 by the ultrasonic wave is the longitudinal direction of the first conductor wiring 11 or the second conductor wiring 12, the first conductor wiring 11 or the second conductor wiring 12 is damaged or disconnected. Can be avoided, and the reliability of the semiconductor device can be improved.

  Note that the semiconductor device according to the fourth embodiment can be manufactured in the same manner as described above in place of the semiconductor device according to the third embodiment. FIG. 6 shows a cross-sectional view corresponding to FIG. In this example, a semiconductor device in which the second protruding electrode 22 is provided on the second conductor wiring 12 while the second protruding electrode 22 is not provided at a position facing the third protruding electrode 26 is manufactured.

  Here, the first protruding electrode 13 is formed to a thickness of about 10 μm, and a flexible tape made of polyimide having a thickness of about 40 μm is used as the insulating substrate 10. The first conductor wiring 11 and the second conductor wiring 12 are made of copper having a thickness of about 8 μm.

  As the material of the first protruding electrode 13, a plurality of kinds of metals that can be formed by electroless plating, for example, Ni (nickel) and Au (gold) are used, and these metals are arranged in the order of Ni and Au ( Hereinafter, the protruding electrode is generally formed by electroless plating to Au / Ni), but any metal that can form a film by electroless plating may be used. . For this reason, it is conceivable to use a metal such as Pd, Pt, or Cu.

  On the other hand, the material of the second protruding electrode 22 or the third protruding electrode 26 is generally a protruding electrode made of Au / Cu or Au / Ni / Cu formed by electrolytic plating.

  When electrolytic plating is performed, the plating material is made conductive by using the first conductor wiring 11 as a power supply line. When manufacturing the wiring substrate or the semiconductor device shown in FIGS. 1 to 3, the second conductor wiring 12 is not electrically connected to the first conductor wiring 11. No protruding electrode is formed on the side surface. On the other hand, when the semiconductor device shown in FIG. 4 is manufactured, if the second conductor wiring 12 and the first conductor wiring 11 are electrically connected, the second conductor wiring 12 is used for the plating material. As a result, the third protruding electrode 26 is formed on the upper surface and the side surface of the second conductor wiring 12.

  According to the present invention, for example, when ultrasonic vibration is used when the protruding electrode of the conductor wiring and the element electrode of the semiconductor element are joined, the mechanical damage to the conductor wiring due to the ultrasonic vibration is reduced. It can suppress that a base material deform | transforms and stress is applied to conductor wiring. Thereby, damage or disconnection of the first conductor wiring or the second conductor wiring can be prevented, which is useful for improving the reliability of the semiconductor device.

The top view which shows the structure of the wiring board used for the semiconductor device in Embodiment 1 of this invention. A plan view showing a configuration of a wiring board used in a semiconductor device in a second embodiment 4A and 4B illustrate a structure of a semiconductor device in Embodiment 3, where FIG. 5A is a plan view, FIG. 5B is a cross-sectional view taken along the line A-A ′ in FIG. Sectional drawing which shows the structure of the semiconductor device in Embodiment 4 Sectional drawing which shows the manufacturing method of the semiconductor device in Embodiment 5 Sectional drawing which shows the example of a change of the manufacturing method of the semiconductor device of the embodiment 2A and 2B show a structure of a conventional semiconductor device, in which FIG. 1A is a plan view, FIG. 1B is a cross-sectional view taken along the line C-C ′ in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 10 Insulation base material 2 Device hole 3, 11 1st conductor wiring 4, 12, 14, 15, 16, 17 2nd conductor wiring 5 Protrusion electrode 6, 20 Semiconductor element 7, 21 Element electrode 8, 23 Protection Films 9 and 24 Sealing material 13 First protruding electrode 18 Semiconductor chip 19 and 25 Wiring substrate 22 Second protruding electrode 26 Third protruding electrode 27 Joining tool

Claims (5)

  A flexible insulating base, a plurality of first conductor wirings arranged in alignment on the insulating base, a first protruding electrode provided on the first conductor wiring, and the first A wiring board comprising one or more second conductor wirings provided adjacent to the outer end sides in a direction perpendicular to the longitudinal direction of one conductor wiring.   The wiring board according to claim 1, wherein a width of the second conductor wiring is wider than a width of the first conductor wiring. A flexible insulating base, a plurality of first conductor wirings arranged in alignment on the insulating base, a first protruding electrode provided on the first conductor wiring, and the first A wiring board having one or more second conductor wirings provided adjacent to the outer end sides in the direction perpendicular to the longitudinal direction of the conductor wiring;
A semiconductor chip having a semiconductor element, an element electrode provided on the semiconductor element, and a second protruding electrode provided on the element electrode;
The semiconductor chip is mounted on the wiring board, and the first protruding electrode of the wiring board and the second protruding electrode of the semiconductor chip are bonded to face each other, so that the first conductor wiring The semiconductor elements are electrically connected,
The semiconductor device, wherein the second conductor wiring is insulated by providing a gap between the second protruding electrode and the semiconductor element.   A third protruding electrode is provided on the second conductor wiring, and the second protruding electrode is not provided on the element electrode of the semiconductor element at a position facing the third protruding electrode. Item 4. The semiconductor device according to Item 3. A flexible insulating base, a plurality of first conductor wirings arranged in alignment on the insulating base, a first protruding electrode provided on the first conductor wiring, and the first Preparing a wiring board having one or more second conductor wirings provided adjacent to the outer end sides in the direction perpendicular to the longitudinal direction of the conductor wiring;
Preparing a semiconductor chip having a semiconductor element, an element electrode provided on the semiconductor element, and a second protruding electrode provided on the element electrode;
The surface of the insulating substrate on which the first conductor wiring and the second conductor wiring are formed and the surface of the semiconductor element on which the element electrodes are arranged are opposed to each other on the insulating substrate. Place the semiconductor element, apply ultrasonic vibration that vibrates in the longitudinal direction of the first conductor wiring via the semiconductor element, and connect the first protruding electrode and the second protruding electrode. And a step of electrically connecting the first conductor wiring to the semiconductor element by ultrasonic bonding.

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