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JP2007053320A - Led lighting device - Google Patents

Led lighting device Download PDF

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Publication number
JP2007053320A
JP2007053320A JP2005239199A JP2005239199A JP2007053320A JP 2007053320 A JP2007053320 A JP 2007053320A JP 2005239199 A JP2005239199 A JP 2005239199A JP 2005239199 A JP2005239199 A JP 2005239199A JP 2007053320 A JP2007053320 A JP 2007053320A
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Prior art keywords
led chip
light
color conversion
conversion member
led
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JP2005239199A
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Japanese (ja)
Inventor
Takuya Nakatani
卓也 中谷
Yoji Urano
洋二 浦野
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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Priority to JP2005239199A priority Critical patent/JP2007053320A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Led Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an LED lighting device which reduces the size of an optical source comprising an LED chip and color transformation component. <P>SOLUTION: The LED lighting device comprises: an LED chip 10; a circuit substrate 40 which is a base material with mounted LED chip 10; and a molded component molding, together with a transparent material, a fluorescent material which is excited by a light radiated from the LED chip 10 and radiates a light with a color different from that of a light emitted from the LED chip 10. A domy color transformation component 20 surrounding the LED chip 10 is provided, while an optical source comprises the LED chip 10 and color transformation component 20. The color transformation component 20 consists of a pair of halved materials 20a and 20b, wherein two notches 21, through which a bonding wires 14 connected to the LED chip 10 passes, are formed on one butting side between a pair of halved materials 20a and 20b. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、ＬＥＤチップ（発光ダイオードチップ）を利用したＬＥＤ照明装置に関するものである。   The present invention relates to an LED lighting device using an LED chip (light emitting diode chip).

従来から、ＬＥＤチップとＬＥＤチップから放射された光によって励起されてＬＥＤチップとは異なる発光色の光を放射する波長変換材料としての蛍光材料とを組み合わせてＬＥＤチップの発光色とは異なる色合いの光を出す発光装置の研究開発が各所で行われている（例えば、特許文献１，２参照）。   Conventionally, an LED chip and a fluorescent material that is excited by light emitted from the LED chip and emits light of a different emission color from the LED chip are combined with a light emitting color different from that of the LED chip. Research and development of light emitting devices that emit light are performed in various places (see, for example, Patent Documents 1 and 2).

ここにおいて、上記特許文献１には、図４に示すように、青色の光を放射するＬＥＤチップ１０’と、ＬＥＤチップ１０’が実装されたベース部材である回路基板１４０’と、透光性樹脂の成形品であってＬＥＤチップ１０’を囲むドーム状に形成されたキャップ１５０’と、キャップ１５０’の外表面に設けられた蛍光体層１６０’と、ＬＥＤチップ１０’から放射された光と蛍光体層１６０’から放射された光との混色光（つまり、ＬＥＤチップ１０’と蛍光体層１６０’とで構成される光源から放射された光）を配光する配光レンズ１７０’とを備えたＬＥＤ照明装置が開示されている。   Here, in Patent Document 1, as shown in FIG. 4, an LED chip 10 ′ that emits blue light, a circuit board 140 ′ that is a base member on which the LED chip 10 ′ is mounted, and a light-transmitting property are disclosed. A cap 150 ′ formed in a resin shape and enclosing the LED chip 10 ′ and having a dome shape, a phosphor layer 160 ′ provided on the outer surface of the cap 150 ′, and light emitted from the LED chip 10 ′ And a light distribution lens 170 ′ that distributes mixed color light (that is, light emitted from a light source composed of the LED chip 10 ′ and the phosphor layer 160 ′) and the light emitted from the phosphor layer 160 ′. There is disclosed an LED lighting device comprising:

ここにおいて、ＬＥＤチップ１０’は、一対の電極（図示せず）それぞれがボンディングワイヤ１４’，１４’を介して回路基板１４０’の導体パターン１４３’，１４３’と電気的に接続されており、キャップ１５０’はＬＥＤチップ１０’だけでなくボンディングワイヤ１４’，１４’を囲むことができる大きさに形成されている。   Here, the LED chip 10 ′ has a pair of electrodes (not shown) electrically connected to the conductor patterns 143 ′ and 143 ′ of the circuit board 140 ′ via bonding wires 14 ′ and 14 ′, The cap 150 ′ is formed in a size that can surround not only the LED chip 10 ′ but also the bonding wires 14 ′ and 14 ′.

また、上記特許文献２には、ＬＥＤチップから放射された光によって励起されてＬＥＤチップの発光色の異なる色の光を発光する蛍光体と透明樹脂との混合物の成形品からなるドーム状の色変換部材がＬＥＤチップおよび当該ＬＥＤチップに電気的に接続されたボンディングワイヤを囲む形で配置された発光装置が開示されている。
特開２００４−２６６１４８号公報 特開平１１−８７７８４号公報 Further, in Patent Document 2, a dome-shaped color made of a molded product of a mixture of a phosphor and a transparent resin that is excited by light emitted from an LED chip and emits light of a different color from the LED chip. There is disclosed a light emitting device in which a conversion member is disposed so as to surround an LED chip and a bonding wire electrically connected to the LED chip.
JP 2004-266148 A Japanese Patent Laid-Open No. 11-87784

ところで、上記特許文献１に開示された図４に示す構造のＬＥＤ照明装置においては、ＬＥＤチップ１０’とともに光源を構成する蛍光体層１５０’がＬＥＤチップ１０’だけでなく当該ＬＥＤチップ１０’に接続されたボンディングワイヤ１４’，１４’の全部を囲む大きさに形成されたキャップ１５０’の外表面に設けられているので、光源のサイズがＬＥＤチップ１０’のサイズに比べて大きくなり過ぎてしまい、点光源で配光設計がし易いというＬＥＤの利点を十分には生かせていなかった。   By the way, in the LED illumination device having the structure shown in FIG. 4 disclosed in Patent Document 1, the phosphor layer 150 ′ constituting the light source together with the LED chip 10 ′ is not only the LED chip 10 ′ but also the LED chip 10 ′. Since it is provided on the outer surface of the cap 150 ′ formed so as to surround all of the connected bonding wires 14 ′ and 14 ′, the size of the light source is too large compared to the size of the LED chip 10 ′. Therefore, the advantage of the LED that it is easy to design a light distribution with a point light source has not been fully utilized.

また、上記特許文献２に開示された発光装置においても、ＬＥＤチップと色変換部材とで構成される光源のサイズがＬＥＤチップのサイズに比べて大きくなり過ぎていた。   In the light emitting device disclosed in Patent Document 2, the size of the light source composed of the LED chip and the color conversion member is too large compared to the size of the LED chip.

本発明は上記事由に鑑みて為されたものであり、その目的は、ＬＥＤチップと色変換部材とで構成される光源の小型化を図れるＬＥＤ照明装置を提供することにある。   This invention is made | formed in view of the said reason, The objective is to provide the LED lighting apparatus which can attain size reduction of the light source comprised by an LED chip and a color conversion member.

請求項１の発明は、ＬＥＤチップと、ＬＥＤチップが実装されたベース部材と、ＬＥＤチップから放射された光によって励起されてＬＥＤチップの発光色とは異なる色の光を放射する蛍光材料を透明材料とともに成形した成形品からなりベース部材におけるＬＥＤチップの実装面側でＬＥＤチップを囲むドーム状の色変換部材とを備え、色変換部材は、一対の半割体により形成され、一対の半割体の互いの突き合わせ面の少なくとも一方に、ＬＥＤチップに接続されたボンディングワイヤが通る切欠部が形成されてなることを特徴とする。   According to the first aspect of the present invention, an LED chip, a base member on which the LED chip is mounted, and a fluorescent material that is excited by light emitted from the LED chip and emits light of a color different from the emission color of the LED chip are transparent. And a dome-shaped color conversion member that surrounds the LED chip on the mounting surface side of the LED chip in the base member. The color conversion member is formed by a pair of halves, and the pair of halves A notch part through which a bonding wire connected to the LED chip passes is formed on at least one of the butted surfaces of the body.

この発明によれば、ベース部材におけるＬＥＤチップの実装面側でＬＥＤチップを囲むドーム状の色変換部材が、一対の半割体により形成され、一対の半割体の互いの突き合わせ面の少なくとも一方に、ＬＥＤチップに接続されたボンディングワイヤが通る切欠部が形成されているので、色変換部材がＬＥＤチップだけでなく当該ＬＥＤチップに接続されたボンディングワイヤの全部を囲むドーム状に形成されている場合に比べて、色変換部材を小型化でき、ＬＥＤチップと色変換部材とで構成される光源の小型化を図れる。   According to this invention, the dome-shaped color conversion member surrounding the LED chip on the mounting surface side of the LED chip in the base member is formed by the pair of halves, and at least one of the butting surfaces of the pair of halves In addition, since the notch portion through which the bonding wire connected to the LED chip passes is formed, the color conversion member is formed not only in the LED chip but also in a dome shape surrounding all of the bonding wires connected to the LED chip. Compared to the case, the color conversion member can be downsized, and the light source composed of the LED chip and the color conversion member can be downsized.

請求項１の発明では、ＬＥＤチップと色変換部材とで構成される光源の小型化を図れるという効果がある。   According to the first aspect of the present invention, there is an effect that the light source composed of the LED chip and the color conversion member can be miniaturized.

本実施形態のＬＥＤ照明装置は、図１に示すように、ＬＥＤチップ１０と、ＬＥＤチップ１０が実装されたベース部材である回路基板４０と、ＬＥＤチップ１０から放射された光によって励起されてＬＥＤチップ１０の発光色とは異なる色の光を放射する蛍光材料を透明材料とともに成形した成形品からなり回路基板４０におけるＬＥＤチップ１０の実装面側でＬＥＤチップ１０を囲むドーム状の色変換部材２０とを備えており、ＬＥＤチップ１０と色変換部材２０とで光源１（図３（ａ）参照）を構成している。   As shown in FIG. 1, the LED lighting device of the present embodiment is an LED that is excited by light emitted from the LED chip 10, a circuit board 40 that is a base member on which the LED chip 10 is mounted, and the LED chip 10. A dome-shaped color conversion member 20 that is formed of a molded product obtained by molding together with a transparent material a fluorescent material that emits light of a color different from the emission color of the chip 10 and surrounds the LED chip 10 on the circuit board 40 mounting surface side. The LED chip 10 and the color conversion member 20 constitute the light source 1 (see FIG. 3A).

回路基板４０は、金属板４１上に絶縁層４２を介して対となる導体パターン４３，４３が形成された金属基板を採用しており、ＬＥＤチップ１０で発生した熱が金属板４１に伝熱されるようになっている。なお、金属板４１の材料としてはＣｕを採用しているが、熱伝導率の比較的高い金属材料であればよく、Ｃｕに限らず、Ａｌなどを採用してもよい。   The circuit board 40 employs a metal board on which a pair of conductor patterns 43 and 43 are formed on a metal plate 41 via an insulating layer 42, and heat generated in the LED chip 10 is transferred to the metal plate 41. It is supposed to be. In addition, although Cu is employ | adopted as a material of the metal plate 41, what is necessary is just a metal material with comparatively high heat conductivity, and not only Cu but Al etc. may be employ | adopted.

ＬＥＤチップ１０は、青色光を放射するＧａＮ系青色ＬＥＤチップであり、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がＧａＮに近く且つ導電性を有するｎ形のＳｉＣ基板からなる導電性基板１１を用いており、導電性基板１１の主表面側にＧａＮ系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部１２がエピタキシャル成長法（例えば、ＭＯＶＰＥ法など）により成長され、導電性基板１１の裏面に図示しないカソード側の電極であるカソード電極（ｎ電極）が形成され、発光部１２の表面（導電性基板１１の主表面側の最表面）に図示しないアノード側の電極であるアノード電極（ｐ電極）が形成されている。要するに、ＬＥＤチップ１０は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されている。上記カソード電極および上記アノード電極は、Ｎｉ膜とＡｕ膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Ａｌなどを採用してもよい。なお、本実施形態では、ＬＥＤチップ１０の発光部１２が導電性基板１１よりも金属板４１から離れた側となるように配置されているが、ＬＥＤチップ１０の発光部１２が導電性基板１１よりも金属板４１に近い側となるように配置してもよい。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is a conductive substrate made of an n-type SiC substrate that has a lattice constant and a crystal structure close to GaN as a crystal growth substrate and has conductivity compared to a sapphire substrate. The light-emitting portion 12 is formed of a GaN-based compound semiconductor material on the main surface side of the conductive substrate 11 and formed of a laminated structure portion having a double hetero structure, for example, by an epitaxial growth method (for example, MOVPE method or the like). ), A cathode electrode (n electrode) which is a cathode side electrode (not shown) is formed on the back surface of the conductive substrate 11, and is shown on the surface of the light emitting unit 12 (the outermost surface on the main surface side of the conductive substrate 11). An anode electrode (p electrode) which is an electrode on the anode side that is not to be formed is formed. In short, the LED chip 10 has an anode electrode formed on one surface side and a cathode electrode formed on the other surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. In the present embodiment, the light emitting unit 12 of the LED chip 10 is disposed on the side farther from the metal plate 41 than the conductive substrate 11, but the light emitting unit 12 of the LED chip 10 is disposed on the conductive substrate 11. It may be arranged so as to be closer to the metal plate 41 than the metal plate 41.

また、ＬＥＤチップ１０は、回路基板４０の金属板４１に、ＬＥＤチップ１０のチップサイズよりも大きなサイズの矩形板状に形成されＬＥＤチップ１０と金属板４１との線膨張率の差に起因してＬＥＤチップ１０に働く応力を緩和するサブマウント部材３０を介して実装されている。サブマウント部材３０は、上記応力を緩和する機能だけでなく、ＬＥＤチップ１０で発生した熱を金属板４１においてＬＥＤチップ１０のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有している。本実施形態では、サブマウント部材３０の材料として熱伝導率が比較的高く且つ絶縁性を有するＡｌＮを採用しており、ＬＥＤチップ１０は、上記カソード電極がサブマウント部材３０におけるＬＥＤチップ１０側の表面に設けられ上記カソード電極と接続される電極パターン（図示せず）および金属細線（例えば、金細線、アルミニウム細線など）からなるボンディングワイヤ１４を介して一方の導体パターン４３と電気的に接続され、上記アノード電極がボンディングワイヤ１４を介して他方の導体パターン４３と電気的に接続されている。なお、ＬＥＤチップ１０とサブマウント部材３０とは、ＡｕＳｎ、ＳｎＡｇＣｕなどの鉛フリー半田を用いて接合されている。   The LED chip 10 is formed on the metal plate 41 of the circuit board 40 in a rectangular plate shape having a size larger than the chip size of the LED chip 10, and is caused by the difference in linear expansion coefficient between the LED chip 10 and the metal plate 41. It is mounted via a submount member 30 that relieves stress acting on the LED chip 10. The submount member 30 has not only a function of relieving the stress but also a heat conduction function of transferring heat generated in the LED chip 10 to a wider range in the metal plate 41 than the chip size of the LED chip 10. . In the present embodiment, AlN having a relatively high thermal conductivity and insulation is used as the material of the submount member 30, and the LED chip 10 has the cathode electrode on the LED chip 10 side of the submount member 30. It is electrically connected to one conductor pattern 43 via a bonding wire 14 provided on the surface and connected to the cathode electrode (not shown) and a fine metal wire (for example, a gold fine wire, an aluminum fine wire, etc.). The anode electrode is electrically connected to the other conductor pattern 43 through the bonding wire 14. The LED chip 10 and the submount member 30 are bonded using lead-free solder such as AuSn or SnAgCu.

サブマウント部材３０の材料はＡｌＮに限らず、線膨張率が導電性基板１１の材料である６Ｈ−ＳｉＣに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、複合ＳｉＣやＳｉなどを採用してもよい。また、本実施形態では、色変換部材２０をサブマウント部材３０に接着剤（例えば、シリコーン樹脂、エポキシ樹脂など）を用いて固着してあるが、ＬＥＤチップ１０の導電性基板１１とサブマウント部材３０との線膨張率が比較的近い場合にはサブマウント部材３０は必ずしも設ける必要はなく、サブマウント部材３０を設けない場合には色変換部材２０を回路基板４０に固着すればよい。   The material of the submount member 30 is not limited to AlN, and any material may be used as long as the linear expansion coefficient is relatively close to 6H—SiC that is the material of the conductive substrate 11 and the heat conductivity is relatively high. Si or the like may be employed. Further, in this embodiment, the color conversion member 20 is fixed to the submount member 30 using an adhesive (for example, silicone resin, epoxy resin, etc.), but the conductive substrate 11 of the LED chip 10 and the submount member are fixed. When the linear expansion coefficient with respect to 30 is relatively close, the submount member 30 is not necessarily provided. When the submount member 30 is not provided, the color conversion member 20 may be fixed to the circuit board 40.

色変換部材２０は、シリコーン樹脂のような透明材料とＬＥＤチップ１０から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体からなる蛍光材料とを混合した混合物によりドーム状に形成されている。したがって、本実施形態のＬＥＤ照明装置では、ＬＥＤチップに図示しない電源部から電力を供給することにより、ＬＥＤチップ１０から青色光が放射されるとともに色変換部材２０の黄色蛍光体からブロードな黄色系の光が放射されるので、ＬＥＤチップ１０からの光と黄色蛍光体からの光との混色光が色変換部材２０から出射され、ＬＥＤチップ１０と色変換部材２０とで構成される光源１から放射された光を配光する照明用の配光レンズ７０（図３（ａ）参照）を通して放射される。ここにおいて、電源部としては、例えば、交流電源を整流平滑するダイオードブリッジからなる整流回路と、整流回路の出力を平滑する平滑コンデンサとを備えた構成のものを採用すればよい。なお、図３（ａ）に示した配光レンズ７０は、光源１の光軸方向において光源１から離れるにつれてレンズ径が徐々に大きくなる形状に形成されており、光出射面が平面状の形状となっているが、配光レンズ７０の形状は特に限定するものではない。   The color conversion member 20 is a mixture of a transparent material such as a silicone resin and a fluorescent material made of a particulate yellow phosphor that is excited by blue light emitted from the LED chip 10 and emits broad yellow light. It is formed in a dome shape by the mixture. Therefore, in the LED lighting device of the present embodiment, blue light is radiated from the LED chip 10 by supplying power from a power supply unit (not shown) to the LED chip, and a broad yellow system is emitted from the yellow phosphor of the color conversion member 20. Therefore, the mixed color light of the light from the LED chip 10 and the light from the yellow phosphor is emitted from the color conversion member 20, and is emitted from the light source 1 configured by the LED chip 10 and the color conversion member 20. The light is emitted through an illumination light distribution lens 70 (see FIG. 3A) that distributes the emitted light. Here, as the power supply unit, for example, a configuration including a rectifier circuit including a diode bridge that rectifies and smoothes an AC power supply and a smoothing capacitor that smoothes the output of the rectifier circuit may be employed. Note that the light distribution lens 70 shown in FIG. 3A is formed in a shape in which the lens diameter gradually increases as the distance from the light source 1 increases in the optical axis direction of the light source 1, and the light emission surface has a planar shape. However, the shape of the light distribution lens 70 is not particularly limited.

色変換部材２０の材料として用いる透明材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、エポキシ樹脂、ガラス、有機材料と無機材料とを複合化した材料などを採用してもよい。また、色変換部材２０の材料として用いる透明材料に混合する蛍光材料も黄色蛍光体に限らず、例えば、ＬＥＤチップ１０が青色ＬＥＤチップである場合には、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。また、色変換部材２０における蛍光材料は、ＬＥＤチップ１０が紫〜近紫外ＬＥＤチップである場合には、赤色蛍光体と緑色蛍光体と青色蛍光体とを混合しても白色光を得ることができる。   The transparent material used as the material of the color conversion member 20 is not limited to a silicone resin, and may be, for example, an acrylic resin, an epoxy resin, glass, a material in which an organic material and an inorganic material are combined, or the like. Further, the fluorescent material mixed with the transparent material used as the material of the color conversion member 20 is not limited to the yellow phosphor. For example, when the LED chip 10 is a blue LED chip, a red phosphor and a green phosphor are mixed. Even white light can be obtained. Further, when the LED chip 10 is a violet to near-ultraviolet LED chip, the fluorescent material in the color conversion member 20 can obtain white light even when a red phosphor, a green phosphor, and a blue phosphor are mixed. it can.

ところで、色変換部材２０は、一対の半割体２０ａ，２０ｂにより形成され、一対の半割体２０ａ，２０ｂの互いの突き合わせ面の一方に、ＬＥＤチップ１０に接続されたボンディングワイヤ１４，１４が通る２つの切欠部２１が形成されている。ここにおいて、本実施形態では、一方の半割体２０ａのみに切欠部２１，２１を形成してあるが、他方の半割体２０ｂのみに切欠部２１，２１を形成してもよいし、両方の半割体２０ａ，２０ｂに切欠部２１を形成してもよい。要するに、一対の半割体２０ａ，２０ｂの互いの突き合わせ面の少なくとも一方に切欠部２１を形成してあればよい。ただし、両方の半割体２０ａ，２０ｂを同じ形状として両方に同数（１ないし複数）の切欠部２１を形成するようにすれば、部品管理が容易になるとともに低コスト化を図れるという利点がある。また、図１に示した例では、一方のボンディングワイヤ１４の一端部が色変換部材２０の内側でサブマウント部材３０の上記電極パターンにボンディングされているが、上記一方のボンディングワイヤ１４の上記一端部を色変換部材２０の外側で上記電極パターンにボンディングするようにしてもよく、この場合には半割体２０ａに形成する切欠部２１の数を少なくできるという利点がある。   By the way, the color conversion member 20 is formed of a pair of halves 20a and 20b, and bonding wires 14 and 14 connected to the LED chip 10 are formed on one of the butting surfaces of the pair of halves 20a and 20b. Two cutout portions 21 are formed. In this embodiment, the notches 21 and 21 are formed only in one half 20a, but the notches 21 and 21 may be formed only in the other half 20b. The notches 21 may be formed in the halves 20a and 20b. In short, the notch part 21 should just be formed in at least one of the mutual abutting surfaces of a pair of halves 20a and 20b. However, if both the halves 20a and 20b have the same shape and the same number (one or more) of the cutout portions 21 are formed on both, there is an advantage that the parts management becomes easy and the cost can be reduced. . In the example shown in FIG. 1, one end of one bonding wire 14 is bonded to the electrode pattern of the submount member 30 inside the color conversion member 20. The portion may be bonded to the electrode pattern outside the color conversion member 20, and in this case, there is an advantage that the number of notches 21 formed in the half body 20a can be reduced.

なお、色変換部材２０とサブマウント部材３０（サブマウント部材３０を設けない場合には回路基板４０）とで囲まれる空間には、ＬＥＤチップ１０を封止する封止樹脂（例えば、シリコーン樹脂など）からなる封止部（図示せず）を設けてもよく、このような封止部を設ける場合には、ＬＥＤチップ１０を封止した後に一対の半割体２０ａ，２０ｂからなる色変換部材２０をサブマウント部材３０に固着するようにしてもよいし、一対の半割体２０ａ，２０ｂからなる色変換部材２０をサブマウント部材３０に固着した後に切欠部２１を通して封止樹脂を注入するようにしてもよい。   In a space surrounded by the color conversion member 20 and the submount member 30 (the circuit board 40 when the submount member 30 is not provided), a sealing resin (for example, silicone resin) that seals the LED chip 10 is used. And a sealing portion (not shown) formed of a color conversion member formed of a pair of halves 20a and 20b after the LED chip 10 is sealed. 20 may be fixed to the submount member 30, or the color conversion member 20 including the pair of halves 20 a and 20 b may be fixed to the submount member 30 and then the sealing resin is injected through the notch 21. It may be.

以上説明した本実施形態のＬＥＤ照明装置では、ベース部材たる回路基板４０におけるＬＥＤチップ１０の実装面側でＬＥＤチップ１０を囲むドーム状の色変換部材２０が、一対の半割体２０ａ，２０ｂにより形成され、一対の半割体２０ａ，２０ｂの互いの突き合わせ面の少なくとも一方に、ＬＥＤチップ１０に接続されたボンディングワイヤ１４，１４が通る切欠部２１，２１が形成されているので、図２に示すように色変換部材２０’がＬＥＤチップ１０だけでなく当該ＬＥＤチップ１０に接続されたボンディングワイヤ１４，１４の全部を囲むドーム状に形成されている場合に比べて、色変換部材２０を小型化でき（ここで、各色変換部材２０，２０’それぞれが内表面の曲率半径を一定とするように設計する場合、色変換部材２０の方が色変換部材２０’に比べて内表面の曲率半径を小さくできる）。したがって、ＬＥＤチップ１０と色変換部材２０とで構成される光源１を図２に示す比較例のようにＬＥＤチップ１０と色変換部材２０’とで構成される光源１’に比べて小型化することができる。要するに、本実施形態のＬＥＤ照明装置では、上記特許文献１や上記特許文献２に比べて光源１を小型化できる。また、光源１を小型化して点光源化することで、図３（ａ）に示すように光源１に光軸を一致させて配置する配光レンズ７０において所望のレンズ特性を付与するための設計が容易になるとともに、図３（ｂ）に示すように図２の光源１’に光軸を一致させて配置する配光レンズ７０’に比べて配光レンズ７０を小型化することができ、ＬＥＤ照明装置全体の薄型化を図れる。   In the LED lighting device of the present embodiment described above, the dome-shaped color conversion member 20 surrounding the LED chip 10 on the mounting surface side of the LED chip 10 on the circuit board 40 as the base member is formed by a pair of halves 20a and 20b. Since notches 21 and 21 through which the bonding wires 14 and 14 connected to the LED chip 10 pass are formed in at least one of the butted surfaces of the pair of halves 20a and 20b. As shown, the color conversion member 20 ′ is smaller than the case where the color conversion member 20 ′ is formed in a dome shape surrounding not only the LED chip 10 but also all of the bonding wires 14 and 14 connected to the LED chip 10. (Here, when each color conversion member 20, 20 ′ is designed so that the radius of curvature of the inner surface is constant, the color conversion member 20 It is the radius of curvature of the inner surface can be reduced as compared with the color conversion member 20 '). Therefore, the light source 1 composed of the LED chip 10 and the color conversion member 20 is made smaller than the light source 1 ′ composed of the LED chip 10 and the color conversion member 20 ′ as in the comparative example shown in FIG. be able to. In short, in the LED lighting device according to the present embodiment, the light source 1 can be reduced in size as compared with the Patent Document 1 and the Patent Document 2. Further, by reducing the size of the light source 1 to a point light source, as shown in FIG. 3A, a design for imparting desired lens characteristics to the light distribution lens 70 arranged with the optical axis aligned with the light source 1 is provided. As shown in FIG. 3B, the light distribution lens 70 can be reduced in size as compared with the light distribution lens 70 ′ arranged with the optical axis aligned with the light source 1 ′ in FIG. The entire LED lighting device can be reduced in thickness.

なお、上記実施形態では、ＬＥＤチップ１０として、発光色が青色の青色ＬＥＤチップを採用しており、導電性基板１１としてＳｉＣ基板を採用しているが、ＳｉＣ基板の代わりにＧａＮ基板を用いてもよく、結晶成長用基板として導電性基板１１に代えてサファイア基板を用いてもよく、この場合には発光部１２に設けられたアノード電極およびカソード電極それぞれをボンディングワイヤ１４を介して導体パターン４３，４３と接続すればよい。また、ＬＥＤチップ１０の発光色は青色に限らず、例えば、赤色、緑色などでもよい。すなわち、ＬＥＤチップ１０の発光部１２の材料はＧａＮ系化合物半導体材料に限らず、ＬＥＤチップ１０の発光色に応じて、ＧａＡｓ系化合物半導体材料やＧａＰ系化合物半導体材料などのIII−V族化合物半導体材料を採用してもよいし、II−VI族化合物半導体材料を採用してもよく、結晶成長用基板の材料も発光部１２の材料に応じて適宜変更すればよい。   In the above embodiment, a blue LED chip whose emission color is blue is adopted as the LED chip 10, and a SiC substrate is adopted as the conductive substrate 11, but a GaN substrate is used instead of the SiC substrate. Alternatively, a sapphire substrate may be used instead of the conductive substrate 11 as a substrate for crystal growth. In this case, the anode electrode and the cathode electrode provided in the light emitting portion 12 are respectively connected to the conductor pattern 43 via the bonding wires 14. , 43 may be connected. Further, the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green. That is, the material of the light emitting portion 12 of the LED chip 10 is not limited to the GaN compound semiconductor material, but depending on the emission color of the LED chip 10, a III-V group compound semiconductor such as a GaAs compound semiconductor material or a GaP compound semiconductor material. A material may be employed, a II-VI group compound semiconductor material may be employed, and the material of the crystal growth substrate may be appropriately changed according to the material of the light emitting portion 12.

実施形態を示し、（ａ）は、色変換部材を構成する一対の半割体の一方の半割体を取り外した状態の概略断面図、（ｂ）は色変換部材の分解斜視図である。Embodiment is shown, (a) is a schematic sectional drawing of the state which removed one half body of a pair of half body which comprises a color conversion member, (b) is a disassembled perspective view of a color conversion member. 比較例を示し、（ａ）は概略断面図、（ｂ）は色変換部材の概略斜視図である。A comparative example is shown, (a) is a schematic sectional drawing, (b) is a schematic perspective view of a color conversion member. 実施形態１と比較例との説明図である。It is explanatory drawing of Embodiment 1 and a comparative example. 従来例を示す概略断面図である。It is a schematic sectional drawing which shows a prior art example.

符号の説明Explanation of symbols

１０ ＬＥＤチップ
１４ ボンディングワイヤ
２０ 色変換部材
２０ａ 半割体
２０ｂ 半割体
２１ 切欠部
３０ サブマウント部材
４０ 回路基板
４１ 金属板
４２ 絶縁層 DESCRIPTION OF SYMBOLS 10 LED chip 14 Bonding wire 20 Color conversion member 20a Half body 20b Half body 21 Notch part 30 Submount member 40 Circuit board 41 Metal plate 42 Insulating layer

Claims (1)

ＬＥＤチップと、ＬＥＤチップが実装されたベース部材と、ＬＥＤチップから放射された光によって励起されてＬＥＤチップの発光色とは異なる色の光を放射する蛍光材料を透明材料とともに成形した成形品からなりベース部材におけるＬＥＤチップの実装面側でＬＥＤチップを囲むドーム状の色変換部材とを備え、色変換部材は、一対の半割体により形成され、一対の半割体の互いの突き合わせ面の少なくとも一方に、ＬＥＤチップに接続されたボンディングワイヤが通る切欠部が形成されてなることを特徴とするＬＥＤ照明装置。   From an LED chip, a base member on which the LED chip is mounted, and a molded product obtained by molding together with a transparent material a fluorescent material that is excited by light emitted from the LED chip and emits light of a color different from the emission color of the LED chip A dome-shaped color conversion member surrounding the LED chip on the mounting surface side of the LED chip in the base member, and the color conversion member is formed by a pair of halves, At least one of the LED lighting devices is formed with a notch through which a bonding wire connected to the LED chip passes.
JP2005239199A 2005-08-19 2005-08-19 Led lighting device Withdrawn JP2007053320A (en)

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WO2010103902A1 (en) * 2009-03-13 2010-09-16 日本電気硝子株式会社 Semiconductor light-emitting element device
CN105185775A (en) * 2015-10-14 2015-12-23 南京吉山光电科技有限公司 COB light source light emitting structure and application thereof
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