JP2006332490A - Light emitting element and light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting element having a strong emission intensity, and capable of downsizing its space area and further obtaining an emission wavelength with a narrow half bandwidth. <P>SOLUTION: The light emitting element 30 comprises a first dividing wall part 31 and a second dividing wall part 32 formed on a base substance 25, a first electrode 41 formed on a side wall 31B of the first dividing wall part 31, a second electrode 42 formed on a side wall 32B of the second dividing wall part 32, and a light emitting layer 50 formed on the base substance 25, and between the first electrode 41 and the second electrode 42. The light emitting layer 50 comprises a first material layer 51 contacting with the first electrode 41, a second material layer 52 contacting with the second electrode 42, and a quantum well layer 54 sandwiched by the first material layer 51 and the second material layer 52. A rare-earth atom 53 is included in at least one of the first material layer 51 and the second material layer 52. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a light-emitting element and a light-emitting device, and more particularly, the present invention can be applied to a light-emitting device such as a display or a backlight, and includes a quantum well structure or a quantum dot and a rare-earth atom (rare-earth atom) in a light-emitting layer. And a display device including the light-emitting element.

  Currently, many light emitting devices such as light emitting diodes and semiconductor lasers are mainly made of III-V or II-VI group compound semiconductor materials such as GaAs. However, the production of these light emitting devices requires an expensive substrate such as a sapphire substrate, the production process is difficult due to the use of a gas such as arsine, and a large and expensive production facility. There are also problems such as high running costs.

  On the other hand, many semiconductor devices such as transistors and memory devices are currently produced from silicon-based materials such as silicon and silicon compound materials. Silicon resources are abundant, inexpensive, and have a low environmental impact. In particular, the high integration of LSIs using silicon-based materials has been steadily progressing since the 1970s, with the progress of miniaturization of individual transistors over a long period of about 30 years. Even now, DRAMs having a gigabit degree of integration have appeared on the market, and developments for achieving further performance improvements of future integrated circuits are continuing. In this way, silicon-based material is an excellent semiconductor device material that has accumulated know-how for microfabrication technology, has a low raw material price, and has a low environmental impact, but because the band structure is an indirect transition type, Since it is difficult to emit light, there has not been much research as a light-emitting device.

  Under such circumstances, in the indirect transition type silicon-based material, various studies and proposals for efficiently converting carriers into light like the direct transition type have been reported. One method is to localize the carrier wave function and use the quantum effect. According to this method, by using a quantum well structure such as a two-dimensional quantum well structure, a one-dimensional quantum well structure (quantum wire), or a zero-dimensional quantum well structure (quantum dot), electrons and holes that are carriers are microscopic regions. Can be trapped in. In the quantum dot, in particular, the state density of carriers can be brought close to a delta function state by localizing electrons and holes in a zero-dimensional manner, and the quantum of the wave function of the carrier according to the size of the carrier confinement region. Occurs and energy takes discrete values. By controlling the confinement method and the size of the carrier confinement region (quantum dot), the band edge emission recombination efficiency can be improved.

  In fact, research on III-V compound semiconductor materials is underway, and many new properties and properties that exceed conventional properties are known (for example, Tatsuya Fukuda, Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa). "Refer to the 51st (Spring 2004) Applied Physics-related Joint Lecture 28a-ZB-8, 2004", "Control of emission wavelength of InAs / GaAs quantum dots using InGaAs strain relaxation layer".

With respect to silicon-based materials, research on quantum dots (for example, nanocrystals) made of semiconductor materials such as Si, Ge, and Si—Ge has been conducted. It has been reported that when these quantum dots are formed in an insulator having a large band gap such as SiO _x and excited with light such as a laser, relatively strong light emission occurs (for example, Hiroshi Kunii, Koichi Shinoda, Keisuke Sato, Kenji Hiraguri, Mitseo Iwase, Tomio Izumi, “Correlation between Si concentration and nanosilicon size in amorphous SiO _x film” 51st (Spring 2004) Joint Lecture on Applied Physics 28p-P6-3 (See 2004). In addition, when an electronic device is made to function by current injection, it has been reported that the device can be driven at a low voltage by forming a nanocrystal in an insulator having a large band gap such as SiO _x . However, there are still few studies and proposals on the structure of light emitting devices using silicon-based materials.

  Conventionally, rare earth atoms added to semiconductor materials are known to emit sharp infrared light or visible light due to intra-shell transitions (for example, Tatsuo Tashiro, Satoshi Koyanagi, Keiichi Aiso, Tanaka) (See Kanni, Shu Namiki, “Development of High-Power Optical Amplifiers”, Furukawa Electric Time Report No. 104, p. 59, July 1999). It is known that the emission wavelength and the half-value width of such rare earth atoms are almost independent of the semiconductor material and temperature and show a constant value. In particular, among rare earth elements, erbium (Er) has a light emission wavelength of 1.55 μm, and the light emission wavelength of 1.55 μm is the minimum transmission loss wavelength of an optical fiber. Therefore, application of erbium light emission to optical fiber communication is expected. Has been.

  As described above, although research on light-emitting materials such as quantum dots and rare earth elements made of semiconductor materials has been reported, research and proposals on device structures to function effectively as light-emitting devices have not been sufficient. The current situation is not.

  In the display device, various flat display devices such as a liquid crystal display device (LCD) and a plasma display device (PDP) have been commercialized in place of the cathode ray tube (CRT) which has been the mainstream until now. Research and commercialization of cold cathode field emission display (FED), surface conduction electron emission display (SED), and organic electroluminescence (organic EL) display devices are in progress.

  As described above, various display devices have been manufactured and developed as flat display devices, but each has various problems in performance, power consumption, manufacturing cost, and the like.

  For example, in a liquid crystal display device (LCD), the direction of light is manipulated using a twisted arrangement of rod-like liquid crystal molecules, so that the viewing angle is narrower than that of a CRT, and light and dark unevenness and color unevenness. There is a problem that is likely to occur. At present, the narrowness of the viewing angle is being improved by in-plane switching technology, vertical alignment technology, multi-domain technology, and combinations thereof. However, it has a structure in which the light of the backlight is easily absorbed, a backlight having a higher light emission intensity is required, and there is a problem that power consumption tends to increase. There is also a problem of color depth. In the case of CRT, the amount of electrons that collide with the phosphor can be changed in an analog manner, so that infinite color and brightness can be expressed. On the other hand, in the case of a liquid crystal display device, the voltage applied to the liquid crystal cell is manipulated, and the amount of light transmitted through the backlight is adjusted stepwise, so that there is a problem that subtle color expression cannot be achieved. Furthermore, there is a problem that the response speed is slow. In the case of CRT, since the electron beam speed is high, there is almost no problem of response. However, in the case of a liquid crystal display device, a moving image is displayed by the actual movement of liquid crystal molecules, so a time lag occurs. Specifically, in the case of a liquid crystal display device driven by a passive matrix, the response is 150 milliseconds or more, and in the case of a standard active matrix drive liquid crystal display device suitable for moving image display, the response is about 40 milliseconds, In the case of MVA with the fastest response, there is a time lag of about 25 milliseconds. In addition, although there is an image that the power consumption is lower than that of CRT, with the improvement in functionality due to the improvement of viewing angle and response, etc., it is moving toward a structure that easily absorbs light and is currently emitted from the backlight. Only about 10% of the light is extracted on the surface of the liquid crystal display device, and power consumption is increasing. Furthermore, the manufacturing process is complicated, and a high-cost glass substrate is used for the substrate. Therefore, there is a problem that the price is higher than CRT and it is difficult to make it cheap in the future. .

  In addition, the organic EL display is expected in the future, but there are many problems at present in order to realize an increase in size. One of the major problems of organic EL displays is the problem of lifetime. Organic molecules such as a light emitting layer, a hole transport layer, and an electron transport layer constituting a light emitting element, and a magnesium alloy or calcium which is a cathode material for efficiently injecting electrons (that is, an electron injection barrier is low) There is a problem that it is weak against oxygen and moisture and reacts with oxygen and moisture to cause a dark spot and a dark spot on the display as well as a decrease in luminance. Although such problems have been improved, for large displays that require a long lifetime, the current situation is that the lifetime is not sufficient, and improvements to the elements themselves and technologies to block external factors are required.

Tatsuya Fukuda, Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa, “Emission Wavelength Control of InAs / GaAs Quantum Dots Using InGaAs Strain Relaxation Layers” 51st (Spring 2004) Joint Lecture on Applied Physics 28a-ZB- 8, 2004 Hiroshi Kunii, Koichi Shinoda, Keisuke Sato, Kenji Hiraguri, Mitsuo Iwase, Tomio Izumi, “Correlation between Si concentration and nanosilicon size in amorphous SiOx film” 51st (Spring 2004) Joint Lecture on Applied Physics 28p -P6-3, 2004 Tatsuro Tashiro, Satoshi Koyanagi, Keiichi Aiso, Kanni Tanaka, Shu Namiki, "Development of High-Power Optical Amplifiers" Furukawa Electric Time Report No. 104 p. 59, July 1999

  It is known that the emission wavelength in a light-emitting device composed only of quantum dots (nanocrystals) usually shows a large half-value width of several tens to several hundreds of nanometers. It is currently difficult to increase the value.

  In addition, as described above, various current flat display devices have a narrow viewing angle, light and dark unevenness and color unevenness, a problem with color depth, a slow response speed, high manufacturing cost, and downsizing. However, there are various problems such as that it is difficult to extend the life, and that power consumption is large. Further, there is a strong demand for achieving high brightness while reducing the area occupied by the light emitting layer constituting the light emitting element as much as possible and achieving high definition of the flat display device.

  Accordingly, an object of the present invention is to incorporate a light emitting element that has a large emission intensity, can occupy a small area, and can obtain an emission wavelength with a narrow half width, and such a light emitting element. An object of the present invention is to provide a light-emitting device that can solve the problems of the various flat panel display devices described above.

In order to achieve the above object, a light emitting device according to the first aspect of the present invention comprises:
(A) a first partition wall formed on the substrate and having a top surface and side walls;
(B) a second partition wall formed on the substrate and having a top surface and a side wall facing the side wall of the first partition wall;
(C) a first electrode formed on the side wall of the first partition wall,
(D) a second electrode formed on the side wall of the second partition wall, and
(E) a light emitting layer formed on the substrate and formed between the first electrode and the second electrode;
With
The light emitting layer includes a first material layer in contact with the first electrode, a second material layer in contact with the second electrode, and a quantum well layer sandwiched between the first material layer and the second material layer (that is, the The light emitting layer is formed by laminating a first material layer in contact with the first electrode, a second material layer in contact with the second electrode, and a quantum well layer sandwiched between the first material layer and the second material layer in the horizontal direction. Structure)
A rare earth atom is contained in at least one of the first material layer and the second material layer.

In order to achieve the above object, a light-emitting device according to the first aspect of the present invention includes:
(A) a first partition wall formed on the substrate and having a top surface and side walls;
(B) a second partition wall formed on the substrate and having a top surface and a side wall facing the side wall of the first partition wall;
(C) a first electrode formed on the side wall of the first partition wall,
(D) a second electrode formed on the side wall of the second partition wall, and
(E) a light emitting layer formed on the substrate and formed between the first electrode and the second electrode;
With
The light emitting layer includes a first material layer in contact with the first electrode, a second material layer in contact with the second electrode, and a quantum well layer sandwiched between the first material layer and the second material layer (that is, the The light emitting layer includes a first material layer in contact with the first electrode, a second material layer in contact with the second electrode, and a quantum well layer sandwiched between the first material layer and the second material layer, which are stacked in the horizontal direction. Structure)
At least one of the first material layer and the second material layer is provided with a plurality of light-emitting elements containing rare earth atoms.

In order to achieve the above object, a light emitting device according to the second aspect of the present invention comprises:
(A) a first partition wall formed on the substrate and having a top surface and side walls;
(B) a second partition wall formed on the substrate and having a top surface and a side wall facing the side wall of the first partition wall;
(C) a first electrode formed on the side wall of the first partition wall,
(D) a second electrode formed on the side wall of the second partition wall, and
(E) a light emitting layer formed on the substrate and formed between the first electrode and the second electrode;
With
The light emitting layer is characterized by comprising quantum dots and rare earth atoms attached to the surface of the quantum dots and / or contained in the quantum dots.

In order to achieve the above object, a light emitting device according to a second aspect of the present invention includes:
(A) a first partition wall formed on the substrate and having a top surface and side walls;
(B) a second partition wall formed on the substrate and having a top surface and a side wall facing the side wall of the first partition wall;
(C) a first electrode formed on the side wall of the first partition wall,
(D) a second electrode formed on the side wall of the second partition wall, and
(E) a light emitting layer formed on the substrate and formed between the first electrode and the second electrode;
With
The light-emitting layer includes a plurality of light-emitting elements composed of quantum dots and rare earth atoms attached to the surface of the quantum dots and / or contained in the quantum dots. .

A quantum well layer in the light-emitting element according to the first aspect of the present invention or the light-emitting device according to the first aspect of the present invention (hereinafter, these may be collectively referred to as the first aspect of the present invention); Means a layer containing a two-dimensional quantum well (so-called quantum well), a layer containing a one-dimensional quantum well (so-called quantum wire), and a layer containing a zero-dimensional quantum well (so-called quantum dot or nanocrystal). The thickness of the quantum well layer is 5 × 10 ⁻¹⁰ m (thickness of about one atom) to 1 × 10 ⁻⁸ m, preferably 5 × 10 ⁻¹⁰ m to 5 × 10 ⁻⁹ m. This is desirable from the viewpoint of improving luminous efficiency.

  In the first aspect of the present invention, the light emitting layer includes a first material layer in contact with the first electrode, a second material layer in contact with the second electrode, and a quantum sandwiched between the first material layer and the second material layer. It consists of a well layer. That is, the light emitting layer has a structure in which the first material layer, the quantum well layer, and the second material layer are stacked in a horizontal direction (a direction substantially parallel to the surface of the substrate, which will be used in the same meaning hereinafter). However, such a structure includes a structure in which the quantum well layer is randomly dispersed in the first material layer and / or the second material layer along the horizontal direction. In addition, a structure in which the quantum well layer and the second material layer are stacked in a horizontal direction is included, and the quantum well layer is formed in an island shape in a boundary region between the first material layer and the second material layer. Also included are structures. In the structure in which the first material layer, the quantum well layer, and the second material layer are stacked in the horizontal direction, the region of at least one of the first material layer and the second material layer in the vicinity of the quantum well layer The rare earth atoms contained in may be the same or different. Further, in the configuration in which both the first material layer and the second material layer contain rare earth atoms, the rare earth atoms contained in the first material layer and the rare earth atoms contained in the second material layer are the same kind of rare earth atoms. Alternatively, different rare earth atoms may be used.

  On the other hand, in the light emitting element according to the second aspect of the present invention or the light emitting device according to the second aspect of the present invention (hereinafter, these may be collectively referred to as the second aspect of the present invention). The light emitting layer may be a single layer or may have a multi-layered structure laminated in the horizontal direction. In the latter case, light emitting layers containing different rare earth atoms are laminated in the horizontal direction. It can also be made into a structure. In addition, the light emitting layer is composed of quantum dots and rare earth atoms attached to and / or contained inside the quantum dots. Specifically, the rare earth atoms are the surface of the quantum dots. Or attached to the inside of the quantum dot (diffused), or attached to the surface of the quantum dot and contained within the quantum dot. .

In the first aspect of the present invention, in the layer containing rare earth atoms, the horizontal concentration peak of the rare earth atoms is caused by the Forster mechanism (Foerster mechanism) from the interface between the layer and the quantum well layer. In this case, in a layer containing rare earth atoms, the concentration peak of the rare earth atoms in the horizontal direction is 1 × from the interface between the layer and the quantum well layer. It is preferably located within the range of 10 ⁻⁸ m. Alternatively, in the first aspect of the present invention, in the layer containing rare earth atoms, the horizontal concentration peak of the rare earth atoms is caused by the Dexter mechanism (Dexter mechanism) from the interface between the layer and the quantum well layer. In this case, in a layer containing rare earth atoms, the horizontal concentration peak of the rare earth atoms is It is preferably located within a range of 1 × 10 ⁻⁹ m from the interface of the well layer. Alternatively, in the first aspect of the present invention, in the layer containing rare earth atoms, the concentration peak of the rare earth atoms in the horizontal direction is energy from the interface between the layer and the quantum well layer via photons. It can be set as the structure located in the range where a transition occurs.

Furthermore, in the first aspect of the present invention including the various preferable modes described above, the quantum well layer can be composed of silicon, germanium, or silicon-germanium, or In addition, the structure may be composed of a silicon-based oxide (SiO _x , 0 <X ≦ 2), or may be composed of a silicon-based nitride such as SiN, or a mixture of these materials. It can also be set as the structure which consists of. When the quantum well layer is composed of silicon, germanium, or silicon-germanium, the quantum well itself (that is, a so-called quantum well, a so-called quantum wire, a so-called quantum dot, or a nanocrystal; the same applies to the following description. Is made of silicon, germanium, or silicon-germanium, and the quantum well itself has a structure surrounded by, for example, a silicon-based oxide (SiO _x , 0 <X ≦ 2). Further, when the quantum well layer is composed of a silicon-based oxide, the quantum well itself is composed of a silicon-based oxide, and the quantum well itself is, for example, a silicon-based oxide having a higher oxygen content ( The structure is surrounded by SiO _x , 0 <X ≦ 2). Further, when the quantum well layer is made of silicon nitride, the quantum well itself is made of silicon nitride, and the quantum well itself is made of, for example, silicon oxide (SiO _x , 0 < The structure is surrounded by X ≦ 2).

  In the first aspect of the present invention including the various preferred embodiments described above, the layer containing rare earth atoms can be composed mainly of silicon. The layer containing atoms is preferably made of a silicon-based oxide.

  On the other hand, in the second aspect of the present invention including the various preferable modes described above, the quantum dots are preferably made of silicon.

  The light-emitting element according to the first aspect of the present invention including the various preferred embodiments described above, the light-emitting device according to the first aspect of the present invention, the light-emitting element according to the second aspect of the present invention, the first of the present invention In the light emitting device according to the second aspect (hereinafter, these may be collectively referred to as the present invention), the light emitting element is an electroluminescent element, more specifically, a current injection type electroluminescent element ( An electroluminescence element that emits light by directly flowing charge carriers from the electrode to the light-emitting layer) or an intrinsic electroluminescence element (an electroluminescence element that emits light by exciting the light-emitting layer in the dielectric with a strong external electric field). That is, the light emitting device of the present invention corresponds to an electroluminescence display device, more specifically, a current injection type electroluminescence display device or an intrinsic electroluminescence display device.

  Furthermore, the light-emitting device of the present invention can be applied not only to the various display devices described above but also to a lighting device including a backlight (for example, used for a liquid crystal display device).

  In the present invention including the various preferred embodiments described above, at least eurobium (Eu) is included as the rare earth atom, or at least praseodymium (Pr) is included as the rare earth atom, or alternatively, as the rare earth atom. At least terbium (Tb) as a rare earth atom, or at least cerium (Ce) as a rare earth atom, or at least thulium (Tm) as a rare earth atom. ). Table 1 below shows the relationship between ions derived from rare earth atoms and the emission wavelength of the light-emitting element. In the present invention, the rare earth atom includes ions derived from the rare earth atom.

[Table 1]
Ion derived from rare earth atoms Light emission wavelength Pr ³⁺ 635 nm (red)
Eu ³⁺ 615nm (red)
Pr ³⁺ 605nm (red)
Er ³⁺ 570nm (orange)
Tb ³⁺ 545nm (green)
Ce ³⁺ 530nm (blue)
Tm ³⁺ 450nm (blue)

The rare earth elements are 15 kinds of 4f orbits from scandium (Sc) with atomic number 21 to yttrium (Y) with atomic number 39 and lanthanum (La) with atomic number 57 to lutetium (Lu) with atomic number 71. Since it is a group of transition series elements and belongs to group IIIB of the periodic table, generally trivalent is stable. Among these, 13 kinds of rare earth atoms from Ce ³⁺ (cerium: atomic number 58) to Yb ³⁺ (ytterbium: atomic number 70) have 1 to 13 4f electrons, and there is a difference in electron arrangement. Based on various energy levels. Since the electron transition energy between different energy levels corresponds to ultraviolet light, visible light, and infrared light, many rare earth atoms absorb and emit light at these wavelengths. That is, cerium (Ce) having an atomic number of 58 to ytterbium having an atomic number of 70 (Yb) having at least “4f electrons” can be used as the rare earth atom, and scandium (Sc) having an atomic number of 21 can be used. It is also possible to use yttrium (Y) having an atomic number of 39.

In the light emitting device according to the first aspect or the second aspect of the present invention including the various preferred embodiments described above, the first light emission that emits light of the first wavelength λ ₁ corresponding to red. Three types of light emission: an element, a second light emitting element that emits light of a _second wavelength λ ₂ corresponding to green, and a third light emitting element that emits light of a _third wavelength λ ₃ corresponding to blue One light emitting element unit is constituted by the element, and a plurality of light emitting element units can be provided. Alternatively, a first light emitting element that emits light having a _first wavelength λ ₁ corresponding to red, a second light emitting element that emits light having a _second wavelength λ ₂ corresponding to green, and a first light emitting element corresponding to blue. 4 types of light emitting elements, that is, a third light emitting element that emits light of a wavelength λ ₃ of 3 and a fourth light emitting element that emits light of a _fourth wavelength λ ₄ corresponding to other colors, One light emitting element unit is configured, and a plurality of light emitting element units can be provided. In addition, you may comprise one light emitting element unit by five or more types of light emitting elements. In these cases, examples of the arrangement of the three types (or four types) of light emitting elements include a delta arrangement, a stripe arrangement, a diagonal arrangement, and a rectangle arrangement. That is, one row of the light emitting elements arranged in a straight line includes a row occupied by all red light emitting elements, a row occupied by green light emitting elements, and a row occupied by blue light emitting elements (and fourth light emitting elements). Columns occupied by elements), or a column in which red light emitting elements, green light emitting elements, and blue light emitting elements (and fourth light emitting elements) are sequentially arranged. Usually, one pixel (one pixel) is composed of a set of one red light emitting element, one green light emitting element, and one blue light emitting element (and one fourth light emitting element). It is composed of two elements (one red light emitting element, one green light emitting element, one blue light emitting element, or one fourth light emitting element).

In the present invention, a silicon semiconductor substrate can be exemplified as the substrate. However, the substrate is not limited to such a substrate, and other semiconductor substrates having a surface formed with an insulating film, GaAs substrate, GaN substrate, semi-insulating Substrate, semi-insulating substrate with insulating film formed on the surface, insulating substrate, insulating substrate with insulating film formed on the surface, quartz substrate, quartz substrate with insulating film formed on the surface, glass substrate, surface A glass substrate on which an insulating film is formed can be given, and depending on the target in which the light-emitting element is formed, the insulating layer, the interlayer insulating layer, and the sealing layer may correspond to the substrate. Here, as a glass substrate, high strain point glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), forsterite (2MgO · SiO ₂ ) Lead glass (Na ₂ O · PbO · SiO ₂ ) can be exemplified. As the insulating layer and the interlayer insulating _{layer, SiO 2, BPSG, PSG,} BSG, AsSG, PbSG, SiON, SOG ( spin on glass), low-melting glass, SiO ₂ based materials such glass paste; SiN-based materials; insulation, such as polyimide Resins can be used alone or in appropriate combination. For forming the insulating layer or the interlayer insulating layer, a known process such as a chemical vapor deposition method (CVD method), a coating method, a sputtering method, or a screen printing method can be used.

As materials constituting the first electrode and the second electrode, chromium (Cr), aluminum (Al), tungsten (W), niobium (Nb), tantalum (Ta), molybdenum (Mo), copper (Cu), gold ( Various transition metals including transition metals such as Au), silver (Ag), titanium (Ti), nickel (Ni), cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), zinc (Zn) Metals: Alloys (for example, MoW) or compounds (for example, nitrides such as TiN, silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi ₂ ), semiconductors such as silicon (Si), diamond, etc. Examples of the carbon thin film include: conductive metal oxides such as ITO (indium oxide-tin), indium oxide, and zinc oxide. As a method for forming the first electrode and the second electrode, for example, a vapor deposition method such as an electron beam vapor deposition method or a hot filament vapor deposition method, a physical vapor deposition method (PVD) represented by a sputtering method, a laser ablation method, or an ion plating method. Method); Combination of PVD method and etching method; Combination of CVD method and etching method; Screen printing method; Plating method (electroplating method and electroless plating method); Lift-off method; Sol-gel method be able to.

  Each of the first partition wall portion and the second partition wall portion can be configured to extend in a strip shape in parallel. In this case, in the adjacent light emitting element, the first partition part constituting a certain light emitting element may correspond to the first partition part constituting the light emitting element adjacent to the light emitting element. In some cases, the light emitting element may correspond to a second partition wall constituting a light emitting element adjacent to the light emitting element. Or it can also be set as the structure by which a grid | lattice-like partition part is formed by the combination of a 1st partition part and a 2nd partition part. In this case as well, in the adjacent light emitting element, the first partition part constituting a certain light emitting element may correspond to the first partition part constituting the light emitting element adjacent to the light emitting element. And it may correspond to the 2nd partition part which comprises the light emitting element adjacent to this light emitting element. Furthermore, in this case, the first partition wall portion and the second partition wall portion are connected by the third partition wall portion and the fourth partition wall portion, thereby forming a lattice-shaped partition wall portion.

  When a lattice-shaped partition wall portion is formed by a combination of the first partition wall portion and the second partition wall portion, the lattice-shaped partition wall portions (first partition wall portion, second partition wall portion, third partition wall portion, and fourth partition wall portion) As a planar shape (corresponding to the inner contour line of the projected image of the partition wall side surface, which is a kind of opening region), rectangular shape, circular shape, elliptical shape, oval shape, Examples include a triangular shape, a pentagonal or higher polygonal shape, a rounded triangular shape, a rounded rectangular shape, and a rounded polygon. By arranging these planar shapes (planar shapes of the opening regions) in a two-dimensional matrix, a lattice-shaped partition wall portion is formed. This two-dimensional matrix-like arrangement may be arranged, for example, like a cross or like a zigzag.

As a material constituting the first partition wall portion and the second partition wall portion (partition wall portion forming material), for example, photosensitive polyimide resin, lead glass colored in black with a metal oxide such as cobalt oxide, a low melting glass paste, Examples thereof include SiO ₂ and SiN. A layer (for example, made of SiN) for preventing gas from being released from the partition wall may be formed on the surface (top surface and side surface) of the partition wall.

  Depending on the partition wall forming material used, the partition wall forming method depends on the screen printing method, dry film method, photosensitive method, casting method, sandblasting method, combination of PVD method and etching method, CVD method and etching method. Combinations with the law can be illustrated. Here, in the screen printing method, an opening is formed in a portion of the screen corresponding to a portion where the partition wall portion is to be formed, and the partition wall forming material on the screen is passed through the opening using a squeegee, and the substrate After the partition wall portion forming material layer is formed, the partition wall portion forming material layer is baked. The dry film method is a method of laminating a photosensitive film on a substrate, removing the photosensitive film at the part where the partition part is to be formed by exposure and development, embedding the partition part forming material in the opening formed by the removal, and baking It is. The photosensitive film is burned and removed by baking, and the partition wall forming material embedded in the opening remains to form the partition wall. The photosensitive method is a method of forming a partition wall forming material layer having photosensitivity on a substrate, patterning the partition wall forming material layer by exposure and development, and performing baking (curing). The casting method (embossing molding method) is a method of forming a partition wall forming material layer by extruding a paste partition material layer made of an organic material or an inorganic material from a mold (cast) onto a substrate. This is a method of firing such a partition wall forming material layer. The sand blasting method is, for example, forming a partition wall forming material layer on a substrate using a screen printing or metal mask printing method, a roll coater, a doctor blade, a nozzle discharge type coater, etc. A portion of the partition wall forming material layer to be formed is covered with a mask layer, and then the exposed portion of the partition wall forming material layer is removed by sandblasting. After forming the partition wall, the partition wall may be polished to flatten the top surface of the partition wall.

  The light absorption layer that absorbs light from the light emitting layer is preferably formed between the adjacent light emitting layers or between the partition wall and the substrate from the viewpoint of improving the contrast of the display image. Here, the light absorption layer functions as a so-called black matrix. As a material constituting the light absorption layer, it is preferable to select a material that absorbs 99% or more of light from the light emitting layer. Such materials include carbon, metal thin films (eg, chromium, nickel, aluminum, molybdenum, etc., or alloys thereof), metal oxides (eg, chromium oxide), metal nitrides (eg, chromium nitride), heat resistance Materials such as photosensitive organic resins, glass pastes, glass pastes containing conductive particles such as black pigments and silver, and specifically, photosensitive polyimide resins, chromium oxides, and chromium oxide / chromium laminated films Can be illustrated. In the chromium oxide / chromium laminated film, the chromium film is in contact with the substrate. For example, the light absorption layer is a combination of a vacuum vapor deposition method, a sputtering method and an etching method, a vacuum vapor deposition method, a sputtering method, a combination of a spin coating method and a lift-off method, a screen printing method, a lithography technique, etc. It can be formed by a method appropriately selected depending on the method.

  In the present invention, a light reflecting layer for reflecting light from the light emitting layer may be provided between the light emitting layer and the substrate. In addition, a kind of lens may be provided above the light emitting layer for focusing (converging) light from the light emitting layer. Furthermore, for on / off control of the first electrode or the second electrode, a switching element connected to the first electrode or the second electrode [for example, a three-terminal element such as a MOS type FET or a thin film transistor (TFT), an MIM, It is desirable to provide a two-terminal element such as an element, a varistor element, or a diode.

  In the present invention, the measurement of the concentration peak of rare earth atoms in the horizontal direction and the measurement of the amount (concentration) of rare earth atoms adhering to the surface of the quantum dots and / or contained in the quantum dots are: It can be done based on Ratherford backscatter (RBS) measurements.

In the manufacturing method for manufacturing the light emitting element or the light emitting device according to the first aspect of the present invention (hereinafter referred to as the first manufacturing method), at least one of the first material layer and the second material layer is used. By performing ion implantation on the layer, rare earth atoms can be included in at least one of the first material layer and the second material layer. Alternatively, when at least one of the first material layer and the second material layer is formed by, for example, a sputtering method, a rare earth atom is simultaneously formed on at least one of the first material layer and the second material layer based on the sputtering method. Can be included. In these cases, in the layer containing the rare earth atoms, the horizontal concentration peak of the rare earth atoms is located within the range where the energy transition by the Forster mechanism occurs from the interface between the layer and the quantum well layer. In this case, in the layer containing rare earth atoms, the horizontal concentration peak of the rare earth atoms in the layer containing the rare earth atoms is the same as that of the quantum well layer. It is preferably located within a range of 1 × 10 ⁻⁸ m from the interface. Alternatively, in a layer containing rare earth atoms, ion implantation is performed such that the concentration peak of the rare earth atoms in the horizontal direction is located within the range where energy transition by the Dexter mechanism occurs from the interface between the layer and the quantum well layer. In this case, in the layer containing rare earth atoms, the concentration peak of the rare earth atoms in the horizontal direction is 1 × from the interface between the layer and the quantum well layer. It is preferably located within the range of 10 ^-9 m. Alternatively, in a layer containing rare earth atoms, the ion concentration is such that the horizontal concentration peak of rare earth atoms is located within the range in which energy transition occurs via photons from the interface between the layer and the quantum well layer. Implantation or sputtering may be performed.

  On the other hand, in the manufacturing method for manufacturing the light emitting element or the light emitting device according to the second aspect of the present invention (hereinafter referred to as the second manufacturing method), after the quantum dots are formed, After the rare earth atoms are diffused and / or the rare earth atoms are attached to the surface of the quantum dots, and then the product obtained by mixing the quantum dots and the silicon alkoxide is attached to the substrate, the product is annealed. By processing, a light emitting layer can be formed.

In the second production method, the step of mixing the quantum dots and the silicon alkoxide to obtain a product is performed by mixing the quantum dots and the silicon alkoxide, and then adding an alkali or an acid as a catalyst to form the silicon alkoxide. It can be set as the structure which consists of the process of hydrolyzing. Here, without limitation, as a catalyst, there can be exemplified a configuration in which the addition of ammonium hydroxide (NH ₄ OH). The product obtained by mixing the quantum dots and the silicon alkoxide is a sol-like or gel-like product, and the product can be configured to adhere to the substrate for each light emitting element.

Furthermore, in the second production method including the various preferred embodiments described above, tetramethoxysilane (Si (OCH ₃ ) ₄ ) or tetraethoxysilane (Si (OC ₂ H ₅ ) ₄ ) is used as the silicon alkoxide. Can be illustrated.

  Furthermore, in the second manufacturing method including the above-described various preferred embodiments, the annealing treatment is performed at a temperature of 100 ° C. or higher and 1500 ° C. or lower in an inert gas atmosphere composed of a rare gas or nitrogen gas. The temperature is preferably 100 ° C. or higher and 1300 ° C. or lower, more preferably 100 ° C. or higher and 1200 ° C. or lower. By performing such an annealing treatment, impurities such as water can be burned out and the rare earth ions can be activated.

  Further, in the second manufacturing method including the above-described various preferred embodiments, the porous silicon semiconductor substrate obtained by anodic oxidation of the silicon semiconductor substrate is superposed in a solvent. It is desirable to form quantum dots by sonication.

  Furthermore, in the second manufacturing method including the above-described various preferred embodiments, the rare earth atoms can be diffused into the quantum dots by ion implantation into the quantum dots, or electroless A rare earth atom can be attached to the surface of the quantum dot by plating, sputtering, or molecular beam epitaxy (MBE). Examples of a method for attaching a product obtained by mixing quantum dots and silicon alkoxide to a substrate include a screen printing method, a printing method using an inkjet method, and a dipping method.

  In the present invention, the light emitting layer having an end surface light emitting structure is disposed perpendicularly to the substrate and light is emitted from the end surface of the light emitting layer, so that the light emitting element can be reduced.

  Moreover, in the present invention, since the light emitting layer is composed of a quantum well layer and a rare earth atom, or a quantum dot and a rare earth atom, for example, a conventional method in which rare earth atoms are simply dispersed in a silicon oxide film that is an insulator. As compared with the light emitting element, a large current can be passed at a lower voltage, and it is possible to obtain a light emission wavelength with a high emission intensity and a narrow half width. This is because carriers are trapped in the quantum well layer or quantum dot and the energy of the carrier is confined. At this time, if rare earth atoms exist in the vicinity of the quantum well layer or quantum dot, the quantum well layer or quantum dot It is considered that the energy of the trapped carrier is transferred to the rare earth atom (that is, energy transition occurs), and then light emission occurs due to the intrashell transition of the rare earth atom. In this case, a higher emission intensity can be obtained with lower power consumption than in the case where there is no quantum well layer or quantum dot and light emission is caused by the transition of rare earth atoms in the shell only by hot electrons. Furthermore, in the case of having a quantum well structure as compared with a light emitting layer made of only silicon oxide that is an insulator, the electric resistance of the light emitting layer is reduced, and the light emitting element can be driven at a low voltage. In addition, the light-emitting element is self-luminous, hardly affected by magnetism, and even when the display device is enlarged, there is no distortion, and it is possible to obtain a display device with a clear and high-quality image and a high viewing angle. Become. Furthermore, compared with the conventional thin display device, further weight reduction and thickness reduction can be realized, and further reduction in power consumption and cost can be achieved.

  In the first aspect of the present invention, the luminous efficiency can be improved by defining the position of the concentration peak of the rare earth atom in the horizontal direction in the layer containing the rare earth atom. In the second aspect, since the light emitting layer is composed of quantum dots and / or rare earth atoms contained in the quantum dots and / or contained within the quantum dots, the light emission efficiency is improved. Can do.

In the present invention, if a light emitting element is made of a silicon-based material, there is an advantage that the composition is stable as compared with other materials. Furthermore, silicon-based materials are abundant in resources, so the price of raw materials is low, the environmental impact is small, they are harmless as waste, and the melting point is high so that they can sufficiently withstand high-temperature processing in production. is there. In addition, if a silicon semiconductor substrate is used as a substrate or a TFT structure is employed, a driving transistor, a switching element, and a light emitting element can be integrally manufactured, and the display device can be further reduced in weight, The thickness can be reduced and the manufacturing process can be simplified. Furthermore, if a driving transistor is formed on a silicon semiconductor substrate corresponding to the base, the electron mobility is amorphous silicon (1 cm ² V ⁻¹ sec ⁻¹ ) or polysilicon (100 cm ² V ⁻¹ sec ⁻¹ ). Compared with 400 cm ² V ⁻¹ s ⁻¹ ), it becomes as high as about 600 cm ² V ⁻¹ s ⁻¹ , and it is possible to further improve the response speed.

  As a result of the above, high-definition display devices and displays that enable further high definition, can achieve weight reduction and thickness reduction, and can further reduce power consumption and cost. A backlight for the device can be provided.

  In the first manufacturing method, if a rare earth atom is included by performing ion implantation or sputtering on at least one of the first material layer and the second material layer, the second manufacturing method is also possible. In the method, a product (for example, a sol-like product or a gel-like product) obtained by mixing a quantum dot containing a rare earth atom (including an attached embodiment) and silicon alkoxide is placed at a predetermined position on a substrate. Can be easily formed in a desired region for each light emitting element, that is, in a desired region, and the light emitting element can be accurately formed even in a large display device. . In particular, in the second manufacturing method, it is possible to form a light emitting layer with lower energy consumption than in the conventional gas phase process, and in the product attaching step, an inexpensive screen printing method or ink jet method is used. It is possible to use an immersion method.

  Hereinafter, the present invention will be described based on examples with reference to the drawings.

  Example 1 relates to a light-emitting element and a light-emitting device according to the first aspect of the present invention. Specifically, the light-emitting element is composed of a current-injection type electroluminescence element, and a plurality of current-injection type electroluminescence elements. It is related with the comprised light-emitting device. A schematic partial cross-sectional view of the light-emitting element and the light-emitting device of Example 1 is shown in FIG. 1A, and a schematic partial plan view is shown in FIG.

The light emitting element 30 of Example 1 which is a current injection type electroluminescence element is:
(A) a first partition wall 31 formed on the base 25 and having a top surface 31A and a side wall 31B;
(B) a second partition wall portion 32 formed on the base 25 and having a top surface 32A and a side wall 32B facing the side wall 31B of the first partition wall portion 31;
(C) a first electrode 41 formed on the side wall 31B of the first partition wall 31;
(D) the second electrode 42 formed on the side wall 32B of the second partition wall 32, and
(E) The light emitting layer 50 formed on the substrate 25 and between the first electrode 41 and the second electrode 42;
It has.

  The light emitting layer 50 includes a first material layer 51 in contact with the first electrode 41, a second material layer 52 in contact with the second electrode 42, and a quantum sandwiched between the first material layer 51 and the second material layer 52. The well layer 54 includes at least one of the first material layer 51 and the second material layer 52 (in the first embodiment, the second material layer 52), the rare earth atom 53 (more specifically, Ions derived from rare earth atoms). In the drawings, rare earth atoms 53 or ions derived from rare earth atoms are indicated by “x” marks.

Here, the first material layer 51 and the second material layer 52 contain silicon as a main component, specifically, a silicon-based oxide, more specifically, silicon oxide (SiO ₂ ). The quantum well layer 54 is made of, for example, silicon (Si), germanium (Ge), or silicon-germanium (Si—Ge), or is made of a silicon-based oxide.

In the layer containing the rare earth atoms 53 (the second material layer 52 in the first embodiment), the horizontal concentration peak of the rare earth atoms is from the interface between the second material layer 52 and the quantum well layer 54. It is located within the range where the energy transition by the Förster mechanism occurs. More specifically, in the layer containing the rare earth atoms (the second material layer 52 in the first embodiment), the horizontal concentration peak of the rare earth atoms is the second material layer 52 and the quantum well layer 54. It is located within a range of 1 × 10 ⁻⁸ m (10 nm) from the interface. Alternatively, in the layer containing the rare earth atoms (the second material layer 52 in Example 1), the horizontal concentration peak of the rare earth atoms is from the interface between the second material layer 52 and the quantum well layer 54. It is located within the range where energy transition through photons occurs. The rare earth atom 53 may be introduced only into the first material layer 51 or may be introduced into both the first material layer 51 and the second material layer 52.

The rare earth atom 53 is eurobium (Eu). In this case, the light emitting element containing Eu ³⁺ emits red light (wavelength: 615 nm), or the rare earth atom 53 is praseodymium (Pr). In this case, Pr ^The light emitting element containing ³⁺ emits red light (wavelength: 605 nm), or the rare earth atom 53 is erbium (Er). In this case, the light emitting element containing Er ³⁺ emits orange light (wavelength: 570 nm). Alternatively, the rare earth atom 53 is terbium (Tb), and in this case, the light emitting element containing Tb ³⁺ emits green light (wavelength: 545 nm), or the rare earth atom 53 is cerium (Ce). in this case, the light-emitting element including Ce ³⁺ blue (wavelength: 530 nm) to emit Alternatively, the rare earth atom 53 is thulium (Tm), in this case, including the Tm ³⁺ Photoelement blue (wavelength: 450 nm) to emit. The rare earth atom 53 may be composed of a plurality of kinds of rare earth atoms as described above or other than that, and the emission color in this case is a mixed color of a specific emission color emitted by the rare earth atom.

The light emitting device of Example 1 includes a plurality of the light emitting elements 30. Specifically, a first light emitting element (red light emitting element 30R) that emits light having a _first wavelength λ ₁ corresponding to red, and a _second light that emits light having a _second wavelength λ ₂ corresponding to green. One light emitting element unit includes three types of light emitting elements: a light emitting element (green light emitting element 30G) and a third light emitting element (blue light emitting element 30B) that emits light of a _third wavelength λ ₃ corresponding to blue. The light emitting device includes a plurality of light emitting element units. In the example shown in FIG. 1B, the red light emitting elements 30R are arranged in a line, the green light emitting elements 30G are arranged in a line, and the blue light emitting elements 30B are arranged in a line.

  As shown in FIG. 1A, a known thin film transistor (TFT) as a switching element is formed on a substrate 10 made of a glass substrate. Here, the thin film transistor includes a channel formation region 24 and source / drain regions 23 formed in the polycrystalline silicon layer 11, and a gate electrode 22 formed above the channel formation region 24 with a gate insulating film 21 interposed therebetween. Yes. The thin film transistor and the polycrystalline silicon layer 11 are covered with an interlayer insulating layer which is a base 25. In addition, one source / drain region 23 of the thin film transistor is connected to the second electrode 42 via a contact plug 26 provided in the base (interlayer insulating layer) 25, and one source / drain region 23 of the thin film transistor is , Connected to a power source (not shown). The first electrode 41 is grounded via a wiring (not shown).

  Then, by turning on the thin film transistor, a voltage is applied to the second electrode 42. As a result, charge carriers directly flow into the light emitting layer 50 from the second electrode 42, whereby the light emitting layer 50 emits light and emits light. Since the layer 50 has a structure in which the first material layer 51, the quantum well layer 54, and the second material layer 52 are stacked in a horizontal direction (a direction substantially parallel to the surface of the substrate 25), From the end face of the light emitting layer 50 (in the example shown in FIG. 1A, the top face of the light emitting layer 50 corresponds), this light is emitted upward of the substrate 25.

  2A, 2B, 3A, 3B, and 4A are schematic partial cross-sectional views and schematic partial plan views of the substrate and the like. ), (B), (A), (B) in FIG. 5, (A), (B) in FIG. 6, and (A), (B) in FIG. A method for manufacturing the element will be described.

[Step-100]
First, a thin film transistor is formed on a substrate 10 made of a glass substrate by a well-known method, and further, a base (interlayer insulating layer) 25 made of, for example, SiO ₂ is formed on the thin film transistor. Contact plug 26 is formed. Note that a thin film transistor is provided for each light emitting element.

[Step-110]
Next, on the base 25, the first partition wall portion 31 and the second partition wall portion 32 made of SiN, and further, the third partition wall portion 33 and the fourth partition wall portion 34 connecting the first partition wall portion 31 and the second partition wall portion 32 are formed. Are formed on the basis of a well-known CVD method and a combination of a lithography technique and an etching technique (see FIGS. 2A and 2B). Thus, the first partition wall 31 having the top surface 31A and the side wall 31B can be formed on the base body 25, and at the same time, the top surface 32A and the side wall 31B of the first partition wall section 31 are opposed to the base body 25. The 2nd partition part 32 which has the side wall 32B can be formed.

[Step-120]
Thereafter, the first electrode 41 is formed on the side wall 31 </ b> B of the first partition wall portion 31, and the second electrode 42 is formed on the side wall 32 </ b> B of the second partition wall portion 32. Specifically, the third partition wall portion 33 and the fourth partition wall portion 34 from the central portion of the recess 35 surrounded by the first partition wall portion 31, the second partition wall portion 32, the third partition wall portion 33, and the fourth partition wall portion 34. A mask layer 60 made of a resist material is formed by a known method (see FIGS. 3A and 3B). Next, after a conductive material layer made of, for example, Pd / Au is formed on the entire surface by sputtering, the mask layer 60 is removed, and then the conductive material on the top surfaces of the lattice-shaped partition walls 31, 32, 33, 34 By removing the layer by a polishing method, the first electrode 41 can be formed on the side wall 31B of the first partition wall portion 31, and the second electrode 42 can be formed on the side wall 32B of the second partition wall portion 32 (FIG. 4). (See (A) and (B)).

[Step-130]
Next, a portion of the recess 35 other than the portion where the first material layer 51 is to be formed is filled with a mask layer 61 made of a resist material based on a known method (see FIGS. 5A and 5B). Next, the portion of the recess 35 where the first material layer 51 is to be formed is filled with the first material layer 51 containing silicon as a main component (more specifically, made of SiO ₂ ) based on, for example, plasma CVD. After that, the mask layer 61 is removed. Thus, the structure shown in FIGS. 6A and 6B can be obtained.

[Step-140]
Thereafter, a quantum well layer 54 made of, for example, silicon (Si) and having a thickness of 10 nm is formed on the sidewall of the first material layer 51 in the recess 35 by sputtering from an oblique direction. Specifically, for example, the quantum well layer 54 can be formed by sputtering an Si target with argon plasma at an RF power of 500 W under an Ar flow rate of 20 sccm and a pressure of 1 × 10 ⁻⁴ Pa. The quantum well layer 54 is also deposited on the top surface of the first material layer 51 and the lattice-shaped partition walls 31, 32, 33, 34. Instead of forming the quantum well layer 54 made of silicon (Si), a quantum well layer 54 made of germanium (Ge) may be formed, or the quantum well layer 54 made of silicon-germanium (Si-Ge). Alternatively, the quantum well layer 54 made of a silicon-based oxide may be formed.

[Step-150]
Next, the main component of silicon (more specifically, SiO ₂ is formed on the sidewall of the quantum well layer 54 (the surface facing the second electrode 42 of the quantum well layer 54) by sputtering from an oblique direction. ) Deposit the second material layer 52 by the desired thickness (horizontal thickness). Then, rare earth atoms 53 are ion-implanted from the side wall (the surface facing the second electrode 42) of the second material layer 52 by ion implantation from an oblique direction. That is, in the layer containing the rare earth atoms (second material layer 52), the concentration peak of the rare earth atoms in the horizontal direction is transferred from the interface between the second material layer 52 and the quantum well layer 54 by the Forster mechanism. After the second material layer 52 is deposited by a desired thickness (thickness in the horizontal direction) so as to be positioned within the range where ion occurs, ion implantation is performed. Alternatively, in the layer containing the rare earth atoms (second material layer 52), the horizontal concentration peak of the rare earth atoms causes energy transition from the interface between the second material layer 52 and the quantum well layer 54 via photons. After the second material layer 52 is deposited by a desired thickness (horizontal thickness) so as to be within the range where the above occurs, ion implantation is performed. Specifically, the second material layer 52 is formed in a desired manner so that the concentration peak of the rare earth atoms 53 in the horizontal direction is located within a range of 10 nm in the horizontal direction from the interface between the second material layer 52 and the quantum well layer 54. After depositing the thickness (thickness in the horizontal direction), rare earth atoms 53 (more specifically, ions derived from the rare earth atoms) are ion-implanted. After the ion implantation, it is desirable to perform annealing treatment at a temperature of about 400 ° C. for about 1 to 100 minutes to recover damage in the second material layer 52 by ion implantation. A desirable range of the dose is 1 × 10 ¹¹ atoms / cm ^{2 to} 1 × 10 ¹⁵ atoms / cm ² , preferably 1 × 10 ¹² atoms / cm ^{2 to} 1 × 10 ¹⁴ atoms / cm ^2. Can do. When ions of terbium (Tb), eurobium (Eu), praseodymium (Pr), erbium (Er), cerium (Ce) and thulium (Tm) are ion-implanted, ions derived from these rare earth atoms are ion-implanted. The optimum acceleration energy and dose amount for the determination may be determined based on various tests, and ion implantation may be performed based on the determination.

[Step-160]
Next, the portion of the recess 35 where the remaining second material layer 52 is to be formed is, for example, based on plasma CVD, the first material layer 52 containing silicon as a main component (more specifically, made of SiO ₂ ). Then, the second material layer 52 and the quantum well layer 54 deposited on the top surface of the first material layer 51 and the lattice-shaped partition walls 31, 32, 33, 34 are chemically / mechanically polished (CMP). Method). In this way, the structure shown in FIGS. 7A and 7B can be obtained.

  Thus, the light emitting layer 50 (the first material layer 51, the second material layer 52, and the quantum well layer 54) can be formed on the base 25 and between the first electrode 41 and the second electrode 42.

  In [Step-150], the second material layer 52 may be formed and the rare earth atoms 53 may be introduced by sputtering instead of ion implantation.

Further, in [Step-150], the concentration peak of the rare earth atoms in the horizontal direction is within the range where energy transition occurs by the Dexter mechanism from the interface between this layer and the quantum well layer (the energy of the carriers confined in the quantum well layer is It may be located within a range that can be transferred to rare earth atoms. Specifically, in the layer containing the rare earth atoms (second material layer 52), the concentration peak of the rare earth atoms in the horizontal direction is set to 1 × from the interface between the second material layer 52 and the quantum well layer 54 in the horizontal direction. You may locate in the range of 10 ^<-9> m (1 nm).

  Hereinafter, the introduction position of rare earth atoms in Example 1 (more specifically, ions derived from rare earth atoms in Example 1) will be described. Here, it is assumed that the concentration peak of the rare earth atoms in the horizontal direction in the layer containing the rare earth atoms 53 is separated from the interface between this layer and the quantum well layer by a distance “d”.

  When the value of d is 100 nm, for example, the quantum well layer 54 and the rare earth atom 53 may be close to each other within 10 nm where energy transition due to the Forster mechanism is expected. It can be expected that the light emission efficiency of the light emitting element is improved as compared with the case where it does not exist. On the other hand, when the value of d is 10 nm, for example, it is said that the upper limit of the moving distance based on the Forster mechanism, which is energy transfer by resonant dipole-dipole interaction, is 10 nm. A significant improvement in efficiency can be expected. Furthermore, when the value of d is 1 nm, for example, the upper limit of the movement distance based on the Dexter mechanism, which is energy transfer by exchange of electrons due to intermolecular contact, is said to be 1 nm. A further significant improvement can be expected.

  Example 2 relates to a light-emitting element and a light-emitting device according to the second aspect of the present invention. Specifically, the light-emitting element is composed of a current-injection type electroluminescence element, and a plurality of current-injection type electroluminescence elements. It is related with the comprised light-emitting device. A schematic partial cross-sectional view of the light-emitting element and the light-emitting device of Example 2 is shown in FIG. The schematic partial plan view is substantially the same as that shown in FIG.

The light emitting device 130 of Example 2 which is a current injection type electroluminescence device is
(A) a first partition wall 31 formed on the base 25 and having a top surface 31A and a side wall 31B;
(B) a second partition wall portion 32 formed on the base 25 and having a top surface 32A and a side wall 32B facing the side wall 31B of the first partition wall portion 31;
(C) a first electrode 41 formed on the side wall 31B of the first partition wall 31;
(D) the second electrode 42 formed on the side wall 32B of the second partition wall 32, and
(E) a light emitting layer 70 formed on the substrate 25 and between the first electrode 41 and the second electrode 42;
It has.

Unlike the first embodiment, the light emitting layer 70 includes the quantum dots 71 and rare earth atoms 73 attached to the surface of the quantum dots 71. In FIG. 8A, the quantum dots 71 are shown to be regularly arranged, but in reality, the quantum dots 71 are randomly arranged. Here, the quantum dots 71 are made of silicon (Si) and exist in a kind of dispersed state in the material layer 72 made of silicon oxide (SiO ₂ ).

The rare earth atom 73 is eurobium (Eu). In this case, the light emitting element containing Eu ³⁺ emits red light (wavelength: 615 nm), or the rare earth atom 73 is praseodymium (Pr). In this case, Pr ^The light emitting element containing ³⁺ emits red light (wavelength: 605 nm), or the rare earth atom 73 is erbium (Er). In this case, the light emitting element containing Er ³⁺ emits orange light (wavelength: 570 nm). Alternatively, the rare earth atom 73 is terbium (Tb), and in this case, the light emitting element containing Tb ³⁺ emits green light (wavelength: 545 nm), or the rare earth atom 73 is cerium (Ce). in this case, the light-emitting element including Ce ³⁺ blue (wavelength: 530 nm) to emit Alternatively, the rare earth atom 73 is thulium (Tm), in this case, including the Tm ³⁺ Photoelement blue (wavelength: 450 nm) to emit. The rare earth atom 73 may be composed of a plurality of kinds of rare earth atoms as described above or other than that, and the emission color in this case is a mixed color of a specific emission color emitted by the rare earth atom.

  Hereinafter, the manufacturing method of the light emitting element of Example 2 will be described.

[Step-200]
First, by performing the same process as [Process-100] of Example 1, a thin film transistor is formed by a well-known method on a substrate 10 made of a glass substrate, and further, for example, made of SiO _2. A base (interlayer insulating layer) 25 is formed, and a contact plug 26 is formed on the base (interlayer insulating layer) 25. Next, by performing the same process as [Step-110] of Example 1, lattice-shaped partition walls 31, 32, 33, and 34 are formed, and further, similar to [Step-120] of Example 1. By performing this step, the first electrode 41 is formed on the side wall 31B of the first partition wall portion 31, and the second electrode 42 is formed on the side wall 32B of the second partition wall portion 32.

[Step-210]
On the other hand, after obtaining a porous silicon semiconductor substrate by anodizing (anodizing) the silicon semiconductor substrate, the silicon semiconductor substrate is subjected to ultrasonic treatment in a solvent to obtain quantum dots 71 made of silicon. .

Specifically, as shown in a conceptual diagram in FIG. 8B, a silicon semiconductor substrate (for example, a p-type silicon semiconductor substrate: resistivity = 1 Ωcm to 10 Ωcm) 80 is mixed with hydrofluoric acid (50 wt%) and ethanol. In the electrolytic solution 81 mixed with the solution at a volume ratio of 1: 1, the silicon semiconductor substrate 80 is made porous by anodizing (anodizing) at a current density of 100 mA / cm ² . That is, a porous silicon semiconductor substrate is obtained. At this time, the silicon semiconductor substrate 80 is used as an anode, and a platinum electrode 82 is used as a counter electrode.

  Thereafter, the porous silicon semiconductor substrate 80 obtained by anodic oxidation is subjected to ultrasonic treatment in a solvent made of, for example, toluene. As a result, the quantum dots 71 made of silicon are removed from the porous silicon semiconductor substrate 80 and dispersed in the solvent. Next, the quantum dots 71 dispersed in the solvent are sorted for each size using a centrifuge, and the quantum dots 71 made of silicon having a substantially uniform particle diameter can be obtained. The quantum dots 71 can also be obtained by using a laser ablation method in a rare gas.

[Step-220]
Next, rare earth atoms 73 are attached to the surface of the quantum dots 71 by electroless plating. The plating bath used in the electroless plating method includes, for example, sodium citrate, sodium hypophosphite, and ammonium sulfate. Here, sodium citrate is used as a complexing agent that forms a stable soluble complex with ions forming the plating layer in the plating bath in order to prevent precipitation of hydroxide and adjust the plating rate. In addition, sodium hypophosphite is used as a reducing agent for precipitating the material forming the plating layer. Furthermore, ammonium sulfate is used as a stabilizer that prevents the decomposition of the plating bath. Rare earth element sulfates (e.g., europium (Eu) sulfate, praseodymium (Pr) sulfate, erbium (Er) sulfate, terbium (Tb) sulfate, cerium (Ce) sulfate Sulfate, thulium (Tm) sulfate) is dissolved, and an ammonium hydroxide (NH ₄ OH) solution is added so that the hydrogen ion concentration (pH) is about 8, followed by heating to 90 ° C. Then, the quantum dots 71 made of silicon (Si) obtained in [Step-210] are put into a plating bath and left until a desired amount of rare earth atoms are attached to the surface of the quantum dots 71. Thus, quantum dots 71 containing rare earth atoms can be obtained by electroless plating. After the electroless plating treatment, the quantum dots 71 are washed with ultrapure water, and the plating bath solution is washed away.

  Note that the method of attaching the rare earth atoms 73 to the surface of the quantum dots 71 is not limited to the electroless plating method, and for example, a sputtering method, a CVD method, or an MBE method (molecular beam epitaxial method) can also be employed. An example of a method for causing the rare earth atoms 73 to be included (diffused) in the quantum dots 71 is an ion implantation method.

[Step-230]
Next, the quantum dot 71 obtained in [Step-220] and silicon alkoxide are mixed to obtain a product. Specifically, after mixing the quantum dots 71 and silicon alkoxide, alkali or acid is added as a catalyst to hydrolyze the silicon alkoxide. Thus, a sol or gel product can be obtained.

More specifically, for example, a desired amount of the quantum dots 71 obtained in [Step-220], tetraethoxysilane (Si (OC ₂ H ₅ ) ₄ ), and methanol are added to a polypropylene container, and further, Then, water having a molar ratio more than twice that of tetraethoxysilane is added. Further, N, N-dimethylformamide is added to the bottom of the container as a drying control agent and stirred. To this mixed solution is added 0.1N ammonium hydroxide (NH ₄ OH, aqueous ammonia) as a catalyst, and after stirring, the container is covered and left at room temperature for several days. During this time, tetraethoxysilane is hydrolyzed and gelled. Thereafter, the container lid is slightly opened and left at room temperature, the solvent in the container is gradually evaporated, and the contents are gradually dried. Furthermore, it is dried in, for example, a 50 ° C. constant temperature bath to obtain a highly viscous gel product. As the silicon alkoxide, for example, tetramethoxysilane (Si (OCH ₃ ) ₄ ) or the like can be used instead of tetraethoxysilane. Moreover, although 0.1N ammonia aqueous solution was used as a catalyst, it is not limited to this, Hydrochloric acid etc. can also be used.

[Step-240]
Next, the product obtained by mixing the quantum dots 71 and the silicon alkoxide is attached to the substrate 25 in the recess 35 in the structure obtained by [Step-200], and then the product is annealed. . Specifically, for example, the gel-like product obtained in [Step-230] is applied on the base 25 exposed at the bottom of the recess 35 based on a screen printing method.

Next, the gel-like product applied on the substrate 25 exposed at the bottom of the recess 35 is annealed. As the conditions for this annealing treatment, for example, a heat treatment at about 400 ° C. in an inert atmosphere such as argon or nitrogen can be exemplified. In this way, the light emitting layer 70 which consists of the quantum dot 71 and the rare earth atom 73 adhering to the surface of the quantum dot 71 can be obtained. In this case, the quantum dot 71 consists of silicon (Si), and silicon oxide (SiO ₂ ) In a dispersed state in the material layer 72. The material layer 72 starts from tetraethoxysilane and is a result of hydrolysis of tetraethoxysilane.

  In [Step-240], if the gel-like product is applied based on the screen printing method, that is, by coating the light emitting layer of the light emitting element for each light emitting unit (for each pixel), for example, a large screen display device However, the light-emitting layer of the light-emitting element can be formed with high accuracy and with lower energy consumption than the existing gas-phase process. In addition, if an electroless plating method is employed as a method for attaching the rare earth atoms 73 to the surface of the quantum dots 71, it is not necessary to create a high vacuum state, so that the display device can be relatively easily increased in size. In addition, energy consumption required for the process can be reduced. In addition, when a large-screen display device is produced by a vacuum process, there is a possibility that film formation accuracy may deteriorate. However, if a gel-like product is applied to a substrate based on a screen printing method, a large-screen display device is configured. The light emitting element or the light emitting device to be manufactured can be manufactured with high accuracy.

  The arrangement of the light-emitting elements constituting the light-emitting device will be described with reference to schematic diagrams in FIGS. 9 to 18, the alphabets “R”, “G”, “B”, and “O” mean light emitting elements that emit red, green, blue, and orange, respectively. A light emitting element that emits red light is called a red light emitting element R, a light emitting element that emits green light is called a green light emitting element G, a light emitting element that emits blue light is called a blue light emitting element B, and a light emitting element that emits orange light. Is called an orange light emitting element O. The arrangement of the light-emitting elements constituting the light-emitting device described with reference to the schematic diagrams of FIGS. 9 to 18 can be applied to the first and second embodiments.

Further, a first light emitting element (a red light emitting element R including Eu ³⁺ as a rare earth atom) that emits light having a _first wavelength λ ₁ (for example, 615 nm) corresponding to red, corresponds to green. A second light-emitting element that emits light of a _second wavelength λ ₂ (for example, 545 nm) (a green light-emitting element G, including Tb ³⁺ as a rare earth atom), and a third wavelength λ corresponding to blue ₃ One light-emitting element unit (one pixel) is formed by three types of light-emitting elements that emit light of ₃ (for example, 450 nm) (blue light-emitting element B, which includes Tm ³⁺ as a rare earth atom). The light emitting device can be configured to include a plurality of light emitting element units. Alternatively, a first light-emitting element (a red light-emitting element R that includes Eu ³⁺ as a rare earth atom) that emits light having a _first wavelength λ ₁ (for example, 615 nm) corresponding to red, corresponds to green. A second light emitting element that emits light of a _second wavelength λ ₂ (for example, 545 nm) (a green light emitting element G that includes Tb ³⁺ as a rare earth atom), a third wavelength λ ₃ corresponding to blue ( For example, a third light-emitting element that emits light of 450 nm (a blue light-emitting element B, which includes Tm ³⁺ as a rare earth atom), and a fourth wavelength λ ₄ corresponding to an orange color other than that. One light-emitting element unit (corresponding to one pixel) is formed by four types of light-emitting elements (for example, 570 nm) that emits light of 570 nm (an orange light-emitting element O and includes Er ³⁺ as a rare earth atom). The light-emitting device has a plurality of It may be configured to includes an optical element unit.

  In the example illustrated in FIG. 9, the planar shape of one pixel (one light emitting element unit) indicated by a region surrounded by a dotted line is a rectangle. Further, in the example shown in FIG. 10, the planar shape of one pixel (one light emitting element unit) indicated by a region surrounded by a dotted line is a square. And the planar shape of the light emitting layer which comprises the light emitting elements R, G, B, and O is square, and the light emitting elements R, G, B, and O are arranged in the X direction and the Y direction. In the example shown in FIG. 9, in one pixel (one light emitting element unit), three types of light emitting elements, a red light emitting element R, a green light emitting element G, and a blue light emitting element B, are arranged in order in the Y direction. A plurality of pixels (a plurality of light emitting element units) are arranged in a two-dimensional matrix in the X direction and the Y direction. And in the example shown in FIG. 9, the light emitting element of the same color is arranged in the X direction. On the other hand, in the example shown in FIG. 10, in one pixel (one light emitting element unit) indicated by a region surrounded by a dotted line, a red light emitting element R, a green light emitting element G, a blue light emitting element B, and an orange light emitting element O. The four types of light emitting elements are sequentially arranged in the X direction and the Y direction, and a plurality of pixels (a plurality of light emitting element units) are arranged in a two-dimensional matrix in the X direction and the Y direction. Each of the light emitting elements R, G, B, and O is provided with a transistor (not shown) for on / off control.

  In the example shown in FIGS. 11 and 12, the planar shape of one pixel (one light emitting element unit) indicated by a region surrounded by a dotted line is a rectangle. And the planar shape of the light emitting layer which comprises light emitting element R, G, B, O is a rectangle, and light emitting element R, G, B, O is arranged in the X direction and the Y direction. In the example shown in FIG. 11, in one pixel (one light emitting element unit), the longitudinal direction of the three types of light emitting elements of the red light emitting element R, the green light emitting element G, and the blue light emitting element B extends in the Y direction. These light emitting elements R, G, B are arranged in order in the X direction, and a plurality of pixels (a plurality of light emitting element units) are arranged in a two-dimensional matrix in the X direction and the Y direction. On the other hand, in the example shown in FIG. 12, in one pixel (one light emitting element unit), the lengths of four types of light emitting elements of red light emitting element R, green light emitting element G, blue light emitting element B, and orange light emitting element O are elongated. The direction extends in the Y direction, and the light emitting elements R, G, B, and O are sequentially arranged in the X direction, and a plurality of pixels (a plurality of light emitting element units) are arranged in a two-dimensional matrix in the X direction and the Y direction. Is arranged. Each of the light emitting elements R, G, B, and O is provided with a transistor (not shown) for on / off control.

  In the example shown in FIG. 13, the planar shape of one pixel (one light emitting element unit) indicated by the area surrounded by the dotted line has a shape in which three regular hexagons are combined. In this case, the planar shape of one pixel (one light emitting element unit) indicated by a region surrounded by a dotted line has a shape in which four regular hexagons are combined. On the other hand, in the example shown in FIG. 15, the planar shape of one pixel (one light emitting element unit) indicated by the area surrounded by a dotted line is an equilateral triangle, and in the example shown in FIG. The planar shape of one pixel (one light emitting element unit) indicated by the enclosed region is a rhombus. The planar shape of the light emitting layers constituting the light emitting elements R, G, B, and O is a regular hexagon or a circle, and the light emitting elements R, G, B, and O are in a honeycomb shape, that is, an equilateral triangle. Arranged at the vertices. In the example shown in FIGS. 13 and 15, in one pixel (one light emitting element unit), three types of light emitting elements of the red light emitting element R, the green light emitting element G, and the blue light emitting element B are adjacent to each other. In the example shown in FIG. 13, the light emitting elements of the same color are arranged at a predetermined interval in the horizontal direction, and in the example shown in FIG. The light emitting element R, the green light emitting element G, and the blue light emitting element B are arranged in order at predetermined intervals. On the other hand, in the example shown in FIGS. 14 and 16, four types of light emission of red light emitting element R, green light emitting element G, blue light emitting element B, and orange light emitting element O in one pixel (one light emitting element unit). The elements are arranged adjacent to each other. In the example shown in FIG. 14, light emitting elements of the same color are arranged at a predetermined interval in the horizontal direction, and in the example shown in FIG. In the horizontal direction, a red light emitting element R, a green light emitting element G, a blue light emitting element B, and an orange light emitting element O are sequentially arranged at predetermined intervals. Each of the light emitting elements R, G, B, and O is provided with a transistor (not shown) for on / off control.

  In the example shown in FIG. 17, the planar shape of one pixel (one light emitting element unit) indicated by a region surrounded by a dotted line is a regular hexagon. And the planar shape of the light emitting layer which comprises the light emitting elements R, G, and B is a rhombus obtained by dividing a regular hexagon into three equal parts, and the light emitting elements R, G, and B are arranged at the vertices of a regular triangle. Here, in one pixel (one light emitting element unit), three types of light emitting elements of the red light emitting element R, the green light emitting element G, and the blue light emitting element B are arranged adjacent to each other. For example, among the three types of light emitting elements R, G, and B, one type of light emitting element (for example, blue light emitting element B) is arranged in the Y direction, and for example, the red light emitting element R in the direction of 30 degrees diagonally to the right. For example, a green light emitting element G is arranged in the direction of 30 degrees diagonally to the left. Each of the light emitting elements R, G, and B is provided with a transistor (not shown) for on / off control.

  In the example shown in FIG. 18, the planar shape of one pixel (one light emitting element unit) indicated by the area surrounded by the dotted line is an equilateral triangle. The planar shape of the light-emitting layers constituting the light-emitting elements R, G, and B is an isosceles triangle obtained by dividing an equilateral triangle into three equal parts, and the three types of light-emitting elements R, G, and B are equilateral triangles. Arranged at the vertices. At that time, the light emitting elements in a certain pixel and the light emitting elements in the pixel adjacent to the light emitting element are arranged so as not to emit light of the same color. Each of the light emitting elements R, G, and B is provided with a transistor (not shown) for on / off control.

  In the display device of Example 1 or Example 2, by using the light-emitting element of the present invention, a self-luminous, lightweight, and thin display device can be realized. Further, when the rare earth atoms are formed in the light emitting layer based on an ion implantation method, a screen printing method, or the like, in the manufacturing process of the blue light emitting element B, the green light emitting element G, the red light emitting element R, and the orange light emitting element O, Since all processes other than the injection process and screen printing are common to all the light emitting elements, the process can be simplified. Further, when the light emitting layer is formed by a sputtering method or the like, all the processes other than the light emitting layer forming process can be similarly manufactured for all the light emitting elements, so that the process can be simplified. Note that the transistors for controlling on / off of the light emitting elements R, G, B, and O (for example, MOS transistors and thin film transistors) may be formed on the same surface as the base on which the light emitting elements are formed. However, it may be formed on the surface opposite to the surface on which the light emitting element is formed.

As mentioned above, although this invention was demonstrated based on the preferable Example, this invention is not limited to these Examples. The quantum well layer 54 according to the first embodiment can be configured by a semiconductor two-dimensional quantum well, a semiconductor one-dimensional quantum well (for example, quantum wire), and a semiconductor zero-dimensional quantum well (for example, quantum dots, nanocrystals). Furthermore, the position (d) of the horizontal concentration peak of the rare earth atom in the layer containing the rare earth atom can be appropriately changed according to the rare earth atom used, the emission intensity, and the like. In addition, as a material constituting the quantum well layer 54, the case of a silicon layer has been described. However, a silicon-based oxide (SiO _x (0 <X ≦ 2), a silicon-based compound such as silicon nitride mainly containing silicon, It is also possible to use a mixture of silicon compounds, a so-called silicon group material such as Ge, a mixture of silicon group materials, other semiconductor materials, or a mixture thereof.

  In Example 1 or Example 2, it has been described that light is emitted from the top surface of the light emitting layer 50 to the upper side of the substrate. However, depending on the structure of the light emitting device, light is emitted from the bottom surface of the light emitting layer 50. There may be a form in which the liquid is injected downward via the.

  In Example 1 or Example 2, in an adjacent light emitting element, a first partition part constituting a certain light emitting element corresponds to a first partition part constituting a light emitting element adjacent to the light emitting element. Yes. However, the present invention is not limited to such a configuration, and a schematic partial cross-sectional view of the light-emitting element and the light-emitting device is shown in FIG. 19A, and a schematic partial plan view is shown in FIG. As shown in FIG. 3, the first barrier rib part constituting a certain light emitting element may be configured to correspond to the second barrier rib part constituting the light emitting element adjacent to the light emitting element.

In addition, the light emitting element can be formed of an intrinsic electroluminescence element. In this case, in the light emitting device in Example 1 or Example 2, an insulating film made of, for example, SiO ₂ may be formed on each of the first electrode 41 and the second electrode 42. The configuration and the structure of can be the same as the configuration and the structure of the light-emitting element described in Embodiment 1.

1A is a schematic partial cross-sectional view of the light-emitting element and the light-emitting device of Example 1, and FIG. 1B is a schematic diagram of the light-emitting element and the light-emitting device of Example 1. FIG. 2A and 2B are a schematic partial cross-sectional view and a schematic partial plan view of a base body and the like for illustrating a method for manufacturing the light-emitting element of Example 1, respectively. FIGS. 3A and 3B are schematic partial views of a substrate and the like for explaining the method for manufacturing the light-emitting element of Example 1, following FIGS. 2A and 2B, respectively. It is sectional drawing and a typical partial top view. 4A and 4B are schematic partial views of a substrate and the like for explaining the method for manufacturing the light-emitting element of Example 1, respectively, following FIGS. 3A and 3B. It is sectional drawing and a typical partial top view. FIGS. 5A and 5B are schematic partial views of a substrate and the like for explaining the method for manufacturing the light-emitting element of Example 1, following FIGS. 4A and 4B, respectively. It is sectional drawing and a typical partial top view. 6A and 6B are schematic partial views of a substrate and the like for explaining the method for manufacturing the light-emitting element of Example 1, following FIGS. 5A and 5B, respectively. It is sectional drawing and a typical partial top view. FIGS. 7A and 7B are schematic partial views of a substrate and the like for explaining the method for manufacturing the light-emitting element of Example 1, following FIGS. 6A and 6B, respectively. It is sectional drawing and a typical partial top view. 8A is a schematic partial cross-sectional view of the light-emitting element and the light-emitting device of Example 2, and FIG. 8B is suitable for performing the method for manufacturing the light-emitting element of Example 2. It is a conceptual diagram of the apparatus for performing an anodizing method. FIG. 9 is a diagram schematically showing the arrangement of the light emitting elements constituting the light emitting device. FIG. 10 is a diagram schematically showing the arrangement of the light emitting elements constituting the light emitting device. FIG. 11 is a diagram schematically showing the arrangement of the light emitting elements constituting the light emitting device. FIG. 12 is a diagram schematically showing the arrangement of the light emitting elements constituting the light emitting device. FIG. 13 is a diagram schematically showing an arrangement of light emitting elements constituting the light emitting device. FIG. 14 is a diagram schematically showing the arrangement of the light emitting elements constituting the light emitting device. FIG. 15 is a diagram schematically showing the arrangement of the light emitting elements constituting the light emitting device. FIG. 16 is a diagram schematically showing the arrangement of the light emitting elements constituting the light emitting device. FIG. 17 is a diagram schematically showing the arrangement of the light emitting elements constituting the light emitting device. FIG. 18 is a diagram schematically showing the arrangement of the light emitting elements constituting the light emitting device. FIG. 19A is a schematic partial cross-sectional view of a modified light-emitting element and light-emitting device of Example 1 or Example 2, and FIG. 19B is a schematic partial plan view thereof. It is.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Substrate, 11 ... Polycrystalline silicon layer, 21 ... Gate insulating film, 22 ... Gate electrode, 23 ... Source / drain region, 24 ... Channel formation region, 25 ... -Base (interlayer insulating layer), 26 ... contact plug, 30, 30R, 30G, 30B, 130 ... light emitting element, 31 ... first partition, 32 ... second partition, 31A, 32A ... Top surface, 31B, 32B ... Side wall, 33 ... Third partition, 34 ... Fourth partition, 35 ... Recess, 41 ... First electrode, 42 ... Second electrode 50 ... Light emitting layer 51 ... First material layer 52 ... Second material layer 53 ... Quantum well layer 60, 61 ... Mask layer 71 Quantum dots, 73 ... rare earth atoms, 80 ... silicon semiconductor substrate, 81 ... electrolytic solution, 82 Platinum electrode

Claims (15)

(A) a first partition wall formed on the substrate and having a top surface and side walls;
(B) a second partition wall formed on the substrate and having a top surface and a side wall facing the side wall of the first partition wall;
(C) a first electrode formed on the side wall of the first partition wall,
(D) a second electrode formed on the side wall of the second partition wall, and
(E) a light emitting layer formed on the substrate and formed between the first electrode and the second electrode;
With
The light emitting layer includes a first material layer in contact with the first electrode, a second material layer in contact with the second electrode, and a quantum well layer sandwiched between the first material layer and the second material layer,
A light emitting element characterized in that a rare earth atom is contained in at least one of the first material layer and the second material layer.   The light emitting device according to claim 1, wherein the quantum well layer is made of silicon, germanium, or silicon-germanium.   The light emitting device according to claim 1, wherein the quantum well layer is made of a silicon-based oxide.   The light-emitting element according to claim 1, wherein the layer including the rare earth atom contains silicon as a main component.   The light emitting device according to claim 4, wherein the layer containing the rare earth atom is made of a silicon-based oxide.   The rare earth atom is at least one rare earth atom selected from the group consisting of eurobium (Eu), praseodymium (Pr), erbium (Er), terbium (Tb), cerium (Ce), and thulium (Tm). The light-emitting element according to claim 1. (A) a first partition wall formed on the substrate and having a top surface and side walls;
(B) a second partition wall formed on the substrate and having a top surface and a side wall facing the side wall of the first partition wall;
(C) a first electrode formed on the side wall of the first partition wall,
(D) a second electrode formed on the side wall of the second partition wall, and
(E) a light emitting layer formed on the substrate and formed between the first electrode and the second electrode;
With
The light emitting layer includes a first material layer in contact with the first electrode, a second material layer in contact with the second electrode, and a quantum well layer sandwiched between the first material layer and the second material layer,
A light emitting device comprising a plurality of light emitting elements containing rare earth atoms in at least one of the first material layer and the second material layer. A first light emitting element that emits light of a _first wavelength λ ₁ corresponding to red, a second light emitting element that emits light of a _second wavelength λ ₂ corresponding to green, and a third light emitting element corresponding to blue One light-emitting element unit is composed of three types of light-emitting elements that emit light having a wavelength λ ₃ of
The light emitting device according to claim 7, comprising a plurality of light emitting element units. A first light emitting element that emits light having a _first wavelength λ ₁ corresponding to red, a second light emitting element that emits light having a _second wavelength λ ₂ corresponding to green, and a third wavelength corresponding to blue One light emitting element includes four types of light emitting elements: a third light emitting element that emits light of λ ₃ and a fourth light emitting element that emits light of a _fourth wavelength λ ₄ corresponding to other colors. Unit is configured,
The light emitting device according to claim 7, comprising a plurality of light emitting element units. (A) a first partition wall formed on the substrate and having a top surface and side walls;
(B) a second partition wall formed on the substrate and having a top surface and a side wall facing the side wall of the first partition wall;
(C) a first electrode formed on the side wall of the first partition wall,
(D) a second electrode formed on the side wall of the second partition wall, and
(E) a light emitting layer formed on the substrate and formed between the first electrode and the second electrode;
With
The light emitting layer is composed of a quantum dot and a rare earth atom attached to the surface of the quantum dot and / or contained in the quantum dot.   The light emitting device according to claim 10, wherein the quantum dots are made of silicon.   The rare earth atom is at least one rare earth atom selected from the group consisting of eurobium (Eu), praseodymium (Pr), erbium (Er), terbium (Tb), cerium (Ce), and thulium (Tm). The light-emitting element according to claim 10. (A) a first partition wall formed on the substrate and having a top surface and side walls;
(B) a second partition wall formed on the substrate and having a top surface and a side wall facing the side wall of the first partition wall;
(C) a first electrode formed on the side wall of the first partition wall,
(D) a second electrode formed on the side wall of the second partition wall, and
(E) a light emitting layer formed on the substrate and formed between the first electrode and the second electrode;
With
The light-emitting layer includes a plurality of light-emitting elements composed of quantum dots and rare earth atoms attached to the surface of the quantum dots and / or contained in the quantum dots. Light emitting device. A first light emitting element that emits light of a _first wavelength λ ₁ corresponding to red, a second light emitting element that emits light of a _second wavelength λ ₂ corresponding to green, and a third light emitting element corresponding to blue One light-emitting element unit is composed of three types of light-emitting elements that emit light having a wavelength λ ₃ of
The light-emitting device according to claim 13, comprising a plurality of light-emitting element units. A first light emitting element that emits light having a _first wavelength λ ₁ corresponding to red, a second light emitting element that emits light having a _second wavelength λ ₂ corresponding to green, and a third wavelength corresponding to blue One light emitting element includes four types of light emitting elements: a third light emitting element that emits light of λ ₃ and a fourth light emitting element that emits light of a _fourth wavelength λ ₄ corresponding to other colors. Unit is configured,
The light-emitting device according to claim 13, comprising a plurality of light-emitting element units.

Images