JP2006100762A - Method of manufacturing solid-state imaging device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a laminate structure consisting of a wafer 11 and a transparent glass board 12 such as a chip size packaged solid-state imaging device, with good productivity and high positioning accuracy. <P>SOLUTION: Many solid-state imaging elements 11A are formed on the front surface of the wafer 11 while at the same time frame-like spacers 13 having such a shape as to surround individual solid-state imaging elements and having a prescribed thickness are formed on the bottom face of the transparent glass board 12, so as to correspond to individual solid-state imaging elements. The wafer and the transparent glass board are faced and aligned, and then are fastened to each other via an adhesive 15 arranged at several spots between the wafer and the transparent glass board. Next, the wafer and the transparent glass board are joined together via the spacers, and then the joined wafer and transparent glass board is divided into individual solid-state imaging devices 21. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a solid-state imaging device, and more particularly to a method for manufacturing a solid-state imaging device suitable for manufacturing a chip size package (CSP) type solid-state imaging device.

  A solid-state imaging device made of a CCD or a CMOS used for a digital camera or a mobile phone is increasingly required to be downsized. For this reason, the conventional large package, in which the entire solid-state image sensor chip is hermetically sealed in a ceramic package or the like, has recently moved to a chip size package (CSP) type, which is approximately the same size as the solid-state image sensor chip. I am doing.

  Under such circumstances, a spacer is formed on the transparent glass plate so as to correspond to the position surrounding the light receiving portion of each solid-state image sensor formed on the wafer (semiconductor substrate). A method has been proposed in which a gap is formed between the wafer and the wafer, and then the transparent glass plate and the wafer are diced along a scribe line and separated into individual solid-state imaging devices ( For example, see Patent Document 1.)

As a method for fixing such a spacer portion to the wafer and the transparent glass plate, an epoxy type or silicon type room temperature curing type adhesive is generally used.
JP 2002-231921 A

  However, in the case of fixing with such a room temperature curing type adhesive, it takes several tens of minutes to several hours until the adhesive is cured, and the wafer and the transparent glass plate need to be pressurized from above and below. Therefore, there is a problem that the productivity of the manufacturing apparatus is low.

  On the other hand, it is possible to employ a manufacturing method in which the wafer and the transparent glass plate are not pressed from above and below until they are cured, and can be left in a temporarily fixed state. In this case, productivity can be increased. However, in this manufacturing method, there is a problem that the wafer and the transparent glass plate are displaced after the alignment between the wafer and the transparent glass plate. In particular, it is necessary to handle from the alignment device to a stationary place, and a positional shift is likely to occur at this time.

  For example, when the horizontal position of the wafer and the transparent glass plate is shifted by several tens of μm, all products taken from one wafer are defective.

  The present invention has been made in view of such circumstances, and a laminated structure composed of a substrate (wafer) and a transparent flat plate (glass plate) like a chip size package (CSP) type solid-state imaging device. In manufacturing a solid-state imaging device, it is desirable to provide a manufacturing method of a solid-state imaging device that can be manufactured with high productivity and accurate alignment accuracy.

  In order to achieve the above object, the present invention provides a process for forming a large number of solid-state image sensors on the surface of a wafer, and individual solid-states at locations corresponding to the solid-state image sensors on the lower surface of a transparent flat plate bonded to the wafer. A step of forming a frame-shaped spacer having a predetermined thickness surrounding the image sensor; and an adhesive is disposed at a plurality of locations between the wafer and the transparent flat plate, and the wafer and the transparent flat plate are aligned. Then, a step of temporarily fixing the wafer and the transparent flat plate, a step of bonding the temporarily fixed wafer and the transparent flat plate through the spacer, and the bonded wafer and the transparent flat plate. And a step of dividing the solid-state imaging device into individual solid-state imaging devices.

  According to the present invention, the wafer and the transparent flat plate are aligned by an alignment device or the like, and the wafer and the transparent flat plate are fixed by an adhesive disposed at a plurality of positions in that state, and the wafer and the transparent flat plate in a fixed state are fixed. Are joined via a spacer. Therefore, it is not necessary to press the wafer and the transparent flat plate for a long time from above and below in a state where the wafer and the transparent flat plate are aligned by an alignment device or the like, and there is no problem that the productivity of the manufacturing apparatus is low. Further, there is no problem that the wafer and the transparent flat plate are displaced after the alignment between the wafer and the transparent flat plate. Therefore, the solid-state imaging device can be manufactured with high productivity and accurate alignment accuracy.

  In the present invention, the adhesive is preferably a radiation curable adhesive. If such a radiation curing type adhesive (for example, an ultraviolet curing type adhesive) is used, the adhesive is instantaneously cured by irradiating radiation from the transparent flat plate side after alignment of the wafer and the transparent flat plate. The effect of the present invention can be further exhibited.

  In this specification, the “solid-state imaging device” refers to an assembly of a large number of solid-state imaging devices (CCD, etc.) in a two-dimensional array, and one array-like set is a single solid-state imaging device. Corresponding.

  As described above, according to the method for manufacturing a solid-state imaging device of the present invention, the solid-state imaging device can be manufactured with high productivity and accurate alignment accuracy.

  Hereinafter, preferred embodiments of a method for manufacturing a solid-state imaging device according to the present invention will be described in detail with reference to the accompanying drawings. In each figure, the same number or symbol is attached to the same member.

  FIG. 1 and FIG. 2 are a perspective view and an essential part cross-sectional view showing an external shape of a chip size package (CSP) type solid-state imaging device manufactured by the manufacturing method of the solid-state imaging device according to the present invention.

  The solid-state imaging device 21 includes a solid-state imaging device 11A and a rectangular solid-state imaging device chip 11C provided with pads 11B, 11B, which are a plurality of connection terminals for electrical connection with the solid-state imaging device 11A. The frame-shaped spacer 13 is mounted on the solid-state image sensor chip 11C so as to surround the image sensor 11A, and the transparent glass plate 12 is mounted on the spacer 13 and seals the solid-state image sensor 11A.

  The solid-state imaging device chip 11C is obtained by dividing a semiconductor substrate (wafer) 11 (corresponding to the substrate of the present invention) described later. The spacer 13 is bonded to the transparent glass plate 12 via an adhesive 13A and the wafer 11 via an adhesive 13B.

  A general semiconductor element manufacturing process is applied to manufacture of the solid-state imaging element 11A. The solid-state imaging device 11A includes a photodiode that is a light receiving element formed on the wafer 11, a transfer electrode that transfers excitation voltage to the outside, a light shielding film having an opening, an interlayer insulating film, and an inner layer formed on the interlayer insulating film. A lens, a color filter provided on the upper part of the inner lens via an intermediate layer, a micro lens provided on the upper part of the color filter via an intermediate layer, and the like.

  Since the solid-state imaging device 11A is configured in this way, light incident from the outside is condensed by the microlens and the inner lens and irradiated to the photodiode, so that the effective aperture ratio is increased.

  The pads 11B, 11B,... Are formed by printing on the solid-state image sensor chip 11C using, for example, a conductive material. Similarly, wiring is provided between the pad 11B and the solid-state imaging device 11A by printing.

  Further, a through wiring 24 penetrating the solid-state imaging element chip 11C is provided, and conduction between the pad 11B and the external connection terminal 26 is established.

  As the wafer 11, a single crystal silicon wafer is generally used.

  The spacer 13 is made of an inorganic material such as silicon. That is, the material of the spacer 13 is preferably a material similar in physical properties such as the thermal expansion coefficient to the wafer 11 and the transparent glass plate 12. For this reason, the material of the spacer 13 is preferably silicon.

  Transparent α-ray shielding glass is used for the transparent glass plate 12 in order to prevent destruction of the photodiode of the CCD.

  Next, the outline of the manufacturing process of the CSP type solid-state imaging device to which the manufacturing method of the solid-state imaging device according to the present invention is applied will be described.

  FIG. 3 is a flowchart illustrating a manufacturing process of the solid-state imaging device. In the first step, as shown in FIGS. 4 and 5, a large number of spacers 13 are formed on the transparent glass plate 12, and solid-state imaging corresponding to individual solid-state imaging devices 21 is formed on the wafer 11. Element 11A, 11A ... and pad 11B, 11B ... are formed.

  4 is a perspective view showing the transparent glass plate 12 and the wafer 11, and FIG. 5 is a cross-sectional view of the transparent glass plate 12 showing the spacer 13 layer.

  The size of the transparent glass plate 12 and the wafer 11 depends on the chip size of the solid-state imaging device 21 (generally 3 to 35 mm square), but can be about 102 mm (4 inches) in outer diameter, for example. The thickness of the transparent glass plate 12 can be 0.3 to 0.7 mm, for example, and the thickness of the wafer 11 can be 0.3 to 0.7 mm, for example.

  In FIG. 4, alignment marks are formed in circles on both sides of the transparent glass plate 12 and the wafer 11.

  The thickness of the spacer 13 can be set to 0.02 to 0.2 mm, for example. These spacers 13 are formed by the following method, for example. First, an inorganic material such as silicon is laminated on the transparent glass plate 12 by spin coating or a CVD apparatus to form an inorganic material film. Next, a pattern of a large number of spacers 13 is formed from the inorganic material film using a photolithographic technique, an etching process, or the like.

  In the case of the photolithographic technique and the etching process, first, an inorganic material film is formed on the entire surface of the glass plate 12, and then a photoresist layer is formed on the surface corresponding to the spacer 13 in FIG. 4 by the photolithographic technique. And a pattern of the spacer 13 is formed by an etching process.

  Moreover, in order to form an inorganic material film on the transparent glass plate 12 other than spin coating, the transparent glass plate 12 and a silicon wafer may be bonded together. Furthermore, the spacer 13 may be directly formed by printing an inorganic material on the transparent glass plate 12.

  As shown in FIG. 2 described above, when the spacer 13 is joined to the transparent glass plate 12 via the adhesive 13A, the application of the adhesive 13A onto the transparent glass plate 12 is performed according to FIG. What is necessary is just to carry out similarly to application | coating on the spacer 13 of the adhesive agent 13B mentioned later.

  In the second step, as shown in FIG. 6, the adhesive 13 </ b> B is thinly and uniformly applied to the upper surface of the spacer 13 on the transparent glass plate 12. As the type of the adhesive 13B, for example, an epoxy-based, silicon-based, resin-based, room-temperature-curing type can be obtained so as to prevent warping during curing and prevent moisture and the like from entering. An adhesive is used. Further, in order to realize a thin coating thickness of about 5 to 10 μm, an adhesive 13B having a viscosity of about 0.1 to 10 Pa · s is used.

  Application of the adhesive 13B to the spacer 13 is performed by, for example, the flowchart of FIG. 7 and the 2-1 to 2-4 steps shown in FIGS. In the second-first step, as shown in FIG. 8, the transfer film 46 is placed on the spinner table 45 with good flatness. The transfer film 46 is sucked and held on the spinner table 45 using air suction or the like so as not to cause displacement or wrinkles.

  The transfer film 46 is a thin film formed flat using polyethylene terephthalate (PET), and has an outer size larger than the outer size of the transparent glass plate 12. After a predetermined amount of adhesive 13B is supplied to the transfer film 46 placed on the spinner table 45, the spinner table 45 rotates at a high speed, so that the adhesive 13B has a thickness of 6 to 10 μm, preferably 8 μm. It is applied uniformly.

  A blade coater, a bar coater, or the like may be used to apply the adhesive 13B to the transfer film 46.

  In general, it is known that a normal temperature curable adhesive for optical use has poor wettability with respect to an inorganic material such as silicon, which is a material of the spacer 13, and the wettability is improved by increasing the viscosity. . However, when an adhesive having a high viscosity is used, it is difficult to control the coating thickness.

  Therefore, in the present embodiment, as the 2-2 step, the aging process for increasing the viscosity of the adhesive 13B is performed by leaving it for a predetermined time after the application of the adhesive 13B to the transfer film 46. In this aging treatment, it is necessary to adjust the temperature and time so that the viscosity of the adhesive 13B is about 9.5 to 10 Pa · s (9500 to 10,000 cps).

  As described above, since the viscosity of the adhesive 13B is changed by the aging process, the coating thickness can be controlled with high accuracy by using the adhesive 13B having a low viscosity when applied to the transfer film 46.

  When a hydrophilic adhesive is used, the surface modification can be performed by irradiating the spacer 13 with plasma or ultraviolet rays. Thereby, the wettability of the adhesive to the silicon spacer can be improved.

  In the second to third steps, the transparent glass plate 12 and the transfer film 46 are bonded together by an alignment device or manual work. For example, as shown in FIG. 9, the alignment apparatus is disposed below the glass holding table 40 and the glass holding table 40 that sucks and holds the transparent glass plate 12 by sucking air from the suction holes 40 a. A film holding table 41 that performs air suction from 41a and sucks and holds the transfer film 46 through a sponge 41b. The film holding table 41 can be moved in the vertical direction in the same manner as a known Z-axis moving table.

  The film holding table 41 rises with the transfer film 46 coated with the adhesive 13B placed on the sponge 41b, and presses the transfer film 46 against the numerous spacers 13 on the transparent glass plate 12 with a uniform force.

  As the sponge 41b, a sponge having a hardness that can firmly press the transfer film 46 against the spacer 13 without damaging the spacer 13 is used. As a result, the adhesive 13B on the transfer film 46 and the spacer 13 are reliably in contact with each other, and the transparent glass plate 12 and the transfer film 46 are bonded together.

  The transparent glass plate 12 and the transfer film 46 may be bonded together by moving the pressure roller on the transparent glass plate 12.

  In the second to fourth steps, as shown in FIG. 10, the transfer film 46 is peeled off from the transparent glass plate 12, and the adhesive 13 </ b> B is transferred onto the spacer 13.

  The film peeling apparatus used in this step includes a work table 42 for sucking and holding the placed transparent glass plate 12 by air suction or the like, a take-up roller 43 to which the negative end of the transfer film 46 is locked, and a transfer It consists of a peeling guide 44 which is in contact with the upper surface of the film 46 and keeps the angle θ between the transfer film 46 being peeled and the transparent glass plate 12 constant.

The work table 42 is slidable in the left-right direction in the figure by a table moving mechanism used for an XY table, for example.

  The film peeling apparatus starts winding the transfer film 46 by the winding roller 43 simultaneously with the slide movement of the work table 42 to the left in the drawing, and sequentially peels off the transfer film 46 from one end side of the transparent glass plate 12. Go.

  At that time, since the back surface of the transfer film 46 is regulated by the peeling guide 44, the angle θ formed between the transparent glass plate 12 and the transfer film 46 is always constant, and each spacer 13 of the transparent glass plate 12 has a constant thickness. The adhesive 13B is transferred.

  If the size of the transfer film 46 is not large enough to be locked to the take-up roller 43, an extension film may be attached to the end of the transfer film 46.

  Returning to the flowchart of FIG. 3, the second step in the wafer 11 will be described. In this step, as shown in FIG. 11, the fixing adhesive 15 is applied to the four locations of the wafer 11 in the form of dots. As the fixing adhesive 15, a radiation curable adhesive (for example, an ultraviolet curable adhesive) can be preferably used.

  That is, this fixing adhesive 15 has a property that it does not cure for a long time in a state where no treatment is performed after application, and a property that cures instantaneously upon irradiation with radiation (for example, ultraviolet rays). Desired.

  The application amount of the fixing adhesive 15 at each location is such that when the transparent glass plate 12 is aligned and brought into close contact with the wafer 11 in the next step (third step), the fixing adhesive 15 is transparent glass. The amount is sufficient to contact the plate 12.

  At that time, it is preferable that the amount of the point-like fixing adhesive 15 is small enough not to spread too much. Otherwise, the point-like fixing adhesive 15 will spread too much, covering the spacer 13, the solid-state imaging device 11A, and the pad 11B, resulting in poor quality.

  In the third step, as shown in FIG. 12B, the transparent glass plate 12 is aligned on the wafer 11 on which a large number of solid-state imaging elements 11A and pads 11B are formed, and then temporarily fixed. An alignment sticking device is used for alignment and temporary fixation between the transparent glass plate 12 and the wafer 11.

As shown in FIG. 12A, the alignment sticking apparatus sucks air from the air suction hole 16a and sucks air from the air suction hole 17a in the same manner as the bonding table 16 that positions and holds the wafer 11. Positioning table 1 that holds the transparent glass plate 12 and adjusts the position of the transparent glass plate 12 in the XY direction and the θ direction (rotation direction) according to the wafer 11.
7.

  With this positioning table 17, the positions of the wafer 11 and the transparent glass plate 12 using the orientation flats 11 f and 12 f (see FIG. 4) between the wafer 11 and the transparent glass plate 12, the above-described alignment marks appropriately provided, and the like. Make adjustments.

  Note that at least a portion corresponding to the fixing adhesive 15 of the positioning table 17 is preferably transparent or translucent (may be cut out).

  Thereafter, the positioning table 17 is lowered, the transparent glass plate 12 is superimposed on the wafer 11, and the transparent glass plate 12 is uniformly pressed by the positioning table 17, whereby the transparent glass plate 12 and the wafer 11 are temporarily bonded. Done. At that time, as described above, the fixing adhesive 15 contacts the transparent glass plate 12.

  Next, ultraviolet light is irradiated from the back surface (upper surface) of the positioning table 17, the transparent or translucent portion of the positioning table 17 and the transparent glass plate 12 are transmitted, the ultraviolet light is applied to the fixing adhesive 15, and the fixing adhesive is used. 15 is cured. Thereby, although the adhesive 13B is not hardened, the transparent glass plate 12 and the wafer 11 are fixed (temporarily bonded) by the fixing adhesive 15 so as not to move relative to each other in the horizontal direction.

  In addition, in the alignment sticking apparatus which bonds the transparent glass plate 12 and the wafer 11, the sponge 41b used in the alignment apparatus of FIG. This is because highly accurate position adjustment is required between the solid-state imaging device 10 </ b> A and the spacer 13.

  In the fourth step, the transparent glass plate 12 and the wafer 11 temporarily bonded by the alignment bonding apparatus of FIG. 12 are removed from the alignment bonding apparatus and transferred to the pressure bonding apparatus 30 shown in FIG. , So that it does not peel off.

  The pressure laminating device 30 includes a support table 30A on which the wafer 11 is placed, a pressure table 30B that is disposed above the support table 30A and presses the entire transparent glass plate 12 with a uniform force via a sponge 30C. Consists of. The pressurization of the transparent glass plate 12 and the wafer 11 by the pressure bonding apparatus is continued for a predetermined time during which the adhesive 13B is cured.

  That is, in the fourth step, the main bonding is performed by continuing the pressurization. The pressed wafer 11 and the transparent glass plate 12 are slightly deformed along the thickness variation and warpage of each other, and the contact state between the spacer 13 and the wafer 11 becomes uniform.

  Since the pressure laminating apparatus 30 has a simple configuration as described above, it is suitable for providing a large number of sets and performing processing in parallel. Therefore, a large number of sets can be provided for one alignment apparatus to improve productivity and reduce costs.

  In the fourth step, the thickness is slightly reduced by pressing the adhesive 13B. On the other hand, the thickness of the cured fixing adhesive 15 is slightly reduced by being pressed, but may be thicker than the adhesive 13B depending on the material. Even in this case, since the position of the fixing adhesive 15 in the planar direction is in the vicinity of the end of the wafer 11, the quality of the solid-state imaging device 21 after dicing (fifth step) is affected. Absent.

  In the fifth step, as shown in FIG. 14, the transparent glass plate 12 and the wafer 11 are diced to form a large number of solid-state imaging devices 21. This dicing is performed while a grinding liquid (coolant) is applied from the injection nozzle 32 so that the diamond wheel 31 (grinding grindstone), the transparent glass plate 12 and the wafer 11 are not heated more than necessary. During this dicing, the space between the spacer 13 and the wafer 11 is securely sealed by the adhesive 13 </ b> B, so that the grinding liquid does not enter the spacer 13.

  Note that a dicing tape 34 is attached to the lower surface of the wafer 11 before dicing so that the solid-state imaging device 21 can be prevented from scattering after dicing.

  As described above, according to the method for manufacturing a solid-state imaging device of the present invention, it is not necessary to press the wafer 11 and the transparent glass plate 12 from above and below for a long time in a state where the wafer 11 and the transparent glass plate 12 are aligned with each other. The problem of low productivity does not occur. Further, there is no problem that the wafer 11 and the transparent glass plate 12 are displaced after the alignment between the wafer 11 and the transparent glass plate 12. Therefore, the solid-state imaging device can be manufactured with high productivity and accurate alignment accuracy.

  As mentioned above, although embodiment of the manufacturing method of the solid-state imaging device concerning this invention was described, this invention is not limited to the said embodiment, Various aspects can be taken.

  For example, the above embodiment has been described with respect to a solid-state imaging device 21 having a square plane as shown in FIGS. 1 and 2, but a rectangle as shown in FIGS. 15 (perspective view) and 16 (cross-sectional view). The present invention can also be suitably applied to the planar solid-state imaging device 21 ′, and the same effect can be obtained. In this solid-state imaging device 21 ′, the end surface of the solid-state imaging device chip 11C is not flush with the spacer 13 and the transparent glass plate 12, and the pads 11B, 11B... Are exposed on the surface of the solid-state imaging device chip 11C. It is the thing of the structure provided so that it might do.

  In the present embodiment, a radiation curable adhesive (ultraviolet curable adhesive) is employed as the fixing adhesive 15 and is applied to the wafer 11 before being set in the alignment apparatus. Although it is cured, other embodiments may be adopted.

  For example, in a state where the wafer 11 and the transparent glass plate 12 are positioned relative to each other without using the fixing adhesive 15 (see FIG. 12B), the wafer 11 at the end and the transparent glass plate 12 are aligned. From the gap, a cyanoacrylate adhesive or an adhesive that cures in a short time (several minutes) (for example, a two-component curing type epoxy adhesive) is injected, and the wafer 11 and the transparent glass plate 12 are temporarily bonded together. You may employ | adopt the aspect to do.

  In short, the process of aligning the wafer 11 and the transparent glass plate 12 relative to each other, the adhesive is disposed at a plurality of locations between the wafer 11 and the transparent glass plate 12, and the wafer 11 and the transparent glass plate 12 are The step of fixing and the step of bonding the wafer 11 and the transparent glass plate 12 via the spacer 13 may be combined suitably to obtain a predetermined effect.

The perspective view of the solid-state imaging device manufactured by the manufacturing method of the solid-state imaging device concerning the present invention Sectional drawing of the principal part of the solid-state imaging device manufactured by the manufacturing method of the solid-state imaging device concerning this invention Flow chart showing manufacturing process of solid-state imaging device Perspective view showing transparent glass plate and wafer Cross section of transparent glass plate showing spacer layer Cross section of transparent glass plate showing the layer of adhesive Flow chart showing details of second step Explanatory drawing showing the method of applying the adhesive to the transfer film Explanatory drawing showing the method of transferring the adhesive to the spacer Explanatory drawing showing the method of peeling the transfer film from the spacer The perspective view which shows the application position of the adhesive for fixing to a wafer Cross-sectional view of the relevant part showing the state of temporary bonding between the transparent glass plate and the wafer Cross-sectional view of the relevant part showing the state of pressure bonding between the transparent glass plate and the wafer Cross section of the main part showing the dicing state of the transparent glass plate and wafer The perspective view of the other aspect of the solid-state imaging device manufactured by the manufacturing method of the solid-state imaging device concerning this invention Sectional drawing of the principal part of the other aspect of the solid-state imaging device manufactured by the manufacturing method of the solid-state imaging device concerning this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Wafer (substrate), 11A ... Solid-state image sensor, 11B ... Pad, 11C ... Solid-state image sensor chip, 12 ... Transparent glass plate, 13 ... Spacer, 13B ... Adhesive, 15 ... Fixing adhesive, 21 ... Solid-state image pickup apparatus

Claims (3)

Forming a large number of solid-state imaging devices on the surface of the wafer;
Forming a frame-shaped spacer having a predetermined thickness in a shape surrounding each solid-state image sensor at a position corresponding to the solid-state image sensor on the lower surface of the transparent flat plate to be bonded to the wafer;
Disposing an adhesive at a plurality of locations between the wafer and the transparent flat plate, aligning the wafer and the transparent flat plate, and then temporarily fixing the wafer and the transparent flat plate;
Bonding the temporarily fixed wafer and the transparent flat plate through the spacer;
Dividing the bonded wafer and the transparent flat plate into individual solid-state imaging devices;
A method for manufacturing a solid-state imaging device.   The method for manufacturing a solid-state imaging device according to claim 1, wherein the adhesive is a radiation curable adhesive.   3. The method for manufacturing a solid-state imaging device according to claim 1, wherein, in the step of bonding the wafer and the transparent flat plate, the transparent flat plate is pressed in the bonding direction to bond the spacer of the transparent flat plate to the wafer.

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