JP2006179600A - Multistage amplification type laser system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain laser light having linear polarization with a desired polarization direction upon using 2 stage laser. <P>SOLUTION: There is provided a polarizer rotatable around an optical axis on the optical axis in an AMP or on the optical axis behind the AMP. The polarizer separates laser light into two orthogonal linearly polarized components, i.e., a P polarized component and an S polarized component, and outputs them. When desired direction light is required on the side of an exposing apparatus, the polarizer is turned such that a desired direction and a direction of the P polarized component of the polarizer are coincident with each other. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a multistage amplification laser system used as a light source for exposure of a semiconductor wafer.

(Light source for exposure)
As semiconductor integrated circuits are miniaturized and highly integrated, improvement in resolving power is demanded in semiconductor exposure apparatuses (hereinafter referred to as “exposure apparatuses”). For this reason, the wavelength of light emitted from the exposure light source is being shortened. As a light source for exposure, a gas laser device is used instead of a conventional mercury lamp. Currently, KrF excimer lasers that emit ultraviolet rays with a wavelength of 248 nm and ArF excimer lasers that emit ultraviolet rays with a wavelength of 193 nm are used as gas laser devices for exposure.

  As the next-generation exposure technology, immersion exposure, in which the apparent wavelength of the exposure light source is shortened by filling the space between the exposure lens on the exposure apparatus and the wafer with a liquid and changing the refractive index, has been studied. Yes. When immersion exposure is performed using an ArF excimer laser as an exposure light source, the wafer is irradiated with ultraviolet light having a wavelength of 134 nm. This technique is called ArF immersion exposure (or ArF immersion lithography).

  The next-generation light source for exposure is an F2 laser that emits ultraviolet light having a wavelength of 157 nm. Further, there is a possibility that the immersion technique is performed using an F2 laser as an exposure light source. In this case, it is said that the wafer is irradiated with ultraviolet light having a wavelength of 115 nm.

(Exposure optics and chromatic aberration)
A projection optical system is adopted as an optical system of many exposure apparatuses. In the projection optical system, chromatic aberration correction is performed by combining optical elements such as lenses having different refractive indexes. At present, there is no optical material other than synthetic quartz and CaF2 suitable for use as a lens material for a projection optical system for ultraviolet light having a wavelength band of 248 nm to 115 nm obtained by the exposure light source described above. For this reason, as a projection lens of an exposure apparatus that uses a KrF excimer laser as an exposure light source, an all-refraction type monochromatic lens composed only of synthetic quartz is employed. As a projection lens of an exposure apparatus that uses an ArF excimer laser as an exposure light source, an all-refractive type partial achromatic lens composed of synthetic quartz and CaF2 is employed.

  However, since the spontaneous amplitude of KrF and ArF excimer lasers is as wide as about 350 to 400 pm, when these projection lenses are used, chromatic aberration is generated and the resolution is lowered. Therefore, it is necessary to narrow the spectral line width of the laser light emitted from the gas laser device until the chromatic aberration becomes negligible. For this reason, a narrow band module (Line Narrow Module, hereinafter referred to as “LNM”) having a narrow band element (etalon, grating, etc.) is provided in the laser resonator of the gas laser device, thereby narrowing the spectral line width. It has been realized.

(Immersion exposure and polarized illumination)
Considering only the electric field, light is expressed as a linear combination of two linearly polarized waves orthogonal to each other. Usually, these two waves are considered as two components, a P-polarized component and an S-polarized component. The azimuths of the P-polarized component and the S-polarized component are not absolute, but are relative ones determined according to the installation angle of the optical element that emits light. The direction of the P-polarized component and the direction of the S-polarized component on the surface of the optical element are determined by the electric field vector direction of the light incident on the optical element and the installation angle of the optical element. Further, the polarization state (linearly polarized light, elliptically polarized light, circularly polarized light) and the polarization direction are determined by the phase velocity and amplitude of the two waves. If the two waves have the same phase, the polarization is linearly polarized, and if the two waves have different phases, they are elliptically polarized and circularly polarized.

  In the case of the ArF immersion exposure described above, if the medium is H2O, the refractive index becomes 1.44, and therefore the lens numerical aperture NA proportional to the refractive index increases to 1.44 times that of the normal ArF exposure. As the NA increases, the influence of the polarization state of the laser light emitted from the light source increases.

  By the way, the following non-patent document 1 has the following description as a matter on the exposure apparatus side. Of two orthogonally polarized waves orthogonal to each other, a polarization component whose azimuth is parallel to the mask pattern direction is defined as S-polarization, and a polarization component whose azimuth is perpendicular to the mask pattern direction is defined as P-polarization. Then, S-polarized light does not affect the image contrast, while P-polarized light lowers the image contrast. The cause of the phenomenon described in Non-Patent Document 1 is considered as follows.

  In the case of P-polarized light, the electric field vectors at the focal point on the wafer are in different directions. For this reason, as the angle of incidence on the wafer increases, the intensity decreases compared to S-polarized light having the same electric field vector. The effect of this phenomenon becomes stronger when NA approaches or exceeds 1.0, and ArF immersion corresponds to this case. From the above, it can be said that the contrast is lowered when the S-polarized light and the P-polarized light are mixed with the laser light. For this reason, the laser light as the light source is required to be linearly polarized light and to have a stable directionality, that is, a polarization direction.

In this specification, the degree of linearly polarized light is referred to as polarization purity P. When the laser beam is observed through a rotating linear polarizer and the maximum value of the measured light intensity is Imax and the minimum value is Imin, the polarization purity P can be obtained by the following equation (1).
P = {(I _MAX −I _MIN ) / (I _MAX + I _MIN )} × 100 (%) (1)
It can be said that the polarization state is closer to linearly polarized light as the polarization purity P approaches 100%.

(2 stage laser system)
In immersion exposure, the transmittance of the lens decreases due to the increase in NA. Therefore, in order to obtain a constant exposure amount, it is necessary to increase the output of a gas laser device that is an exposure light source. In order to increase the throughput of the exposure apparatus, it is necessary to increase the output of the gas laser apparatus. There is a two-stage laser system as a device for obtaining a high output after narrowing the spectral line width. A two-stage laser system (hereinafter referred to as a two-stage laser) includes an oscillation stage (Oscillator: OSC for short) that generates seed light and an amplification stage (Amplifier for short) that amplifies the seed light.

FIG. 1 is a diagram showing a simplified configuration of a two-stage laser.
Two types of two-stage laser methods are known, the MOPO method and the MOPA method, which have different amplification means. MOPO is an abbreviation for Master Oscillator and Power Oscillator, and is also called an injection lock system. In this system, a resonator is provided with an amplification chamber interposed therebetween, and laser light passes through the amplification chamber a plurality of times and is amplified. MOPA is an abbreviation for Master Oscillator and Power Amplifier. In this system, a resonator is not provided with an amplification chamber interposed therebetween, and laser light is amplified by passing through the amplification chamber once or twice. The two-stage laser 100 shown in FIG. 1 is a MOPO system device. In this specification, MOPO will be described as a specific example of the amplification means of the two-stage laser.

  The two-stage laser 100 includes an OSC (laser) 10 and an AMP (laser) 20 provided on the output optical axis of the OSC 10.

  In the OSC 10, the OSC chamber 11, the LNM 12, and the OSC front mirror 15 are provided on the laser optical axis. The OSC chamber 11 has windows 11a and 11b made of CaF2 as a material. The LNM 12 includes one or more prisms, for example, two prisms 13 a and 13 b and a grating 14. Hereinafter, the prism means a prism beam expander or a dispersion prism. The prisms 13a and 13b expand the beam width of light propagating from the OSC chamber 11 side, and reduce the beam width of light propagating from the grating 14 side. The grating 14 reflects only light in a predetermined band out of the light propagating from the prism 13b to the prism 13b side. The OSC front mirror 15 is coated with a PR (Partial-Reflection) film. The OSC front mirror 15 transmits a part of the light propagating from the OSC chamber 11 side and reflects the rest. The LNM 12 and the OSC front mirror 15 constitute a resonator.

  In the AMP 20, an AMP chamber 21, an AMP rear mirror 22, and an AMP front mirror 23 are provided on the laser optical axis. The AMP chamber 21 has windows 21a and 21b made of CaF2 as a material. The AMP rear mirror 22 is coated with a reflective film having a high reflectivity of about 90%. The AMP front mirror 23 is coated with a PR film having a reflectance of 30 to 50%. In the AMP front mirror 23, a part of the light propagating from the AMP chamber 21 side is transmitted and the rest is reflected. The AMP rear mirror 22 and the AMP front mirror 23 constitute a resonator.

  In the OSC chamber 11, internal laser gas molecules are excited by discharge. The molecule is given energy and transitions to the upper level and then transitions to the lower level. Light is generated during such stimulated emission. Light is emitted to the outside from the windows 11a and 11b. This light is reciprocated between the LMN 12 and the OSC front mirror 15 via the OSC chamber 11 to be narrowed. The narrowed laser beam is emitted from the OSC front mirror 15. Laser light (referred to as seed light) is changed in propagation direction by one or more propagation mirrors 31 in some cases, transmitted through the AMP rear mirror 22 and injected into the AMP chamber 21. In the AMP chamber 21, the laser light injected by the same stimulated emission as the OSC chamber 11 is amplified. The laser light is reciprocated between the AMP rear mirror 22 and the AMP front mirror 23 via the AMP chamber 21 and gradually amplified. The amplified laser light is emitted from the AMP front mirror 23. The laser light emitted from the AMP 20 is taken into the exposure apparatus 30 and used for exposure of an exposure target (for example, a wafer).

  FIG. 1 shows a two-stage laser, that is, a two-stage amplification laser system, but a three-stage amplification laser system can further improve the output. In the case of a three-stage amplification laser system, another AMP is provided on the output optical axis of the AMP 20. That is, the multistage amplification laser system has a form in which one or more AMPs are provided in series in the subsequent stage of the OSC 10.

  There are cases where another seed light injection method as described in Japanese Patent Application Nos. 2003-116924 and 2003-298286, other unstable resonators, and the like are applied to the two-stage laser.

(Brewster angle and polarization)
In a laser apparatus having a chamber, the directions of P-polarized light and S-polarized light are defined by the attitude of the window.

  In general, chamber windows (windows 11a, 11b, 21a, and 21b in FIG. 1) provided in a resonator of a gas laser apparatus are often installed with an inclination of the Brewster angle with respect to the optical axis. The window functions as a so-called polarizer when the incident surface of the window is installed with some inclination with respect to the laser optical axis. The P-polarized component of the light incident on the window is transmitted almost 100% because the Fresnel reflection at the window surface becomes zero. Therefore, the P-polarized component of the laser light is less attenuated when passing through the window, and the output energy hardly decreases. The S-polarized component of light incident on the window undergoes Fresnel reflection at the window surface. Therefore, the S-polarized component of the laser light is attenuated when passing through the window, and the output energy is reduced.

  Laser light is reciprocated several to dozens of times within the resonator. While the laser beam passes through the window several times, the S-polarized component is repeatedly subjected to Fresnel reflection (14.86%) and attenuated. On the other hand, the P-polarized light component is transmitted with almost no attenuation, and is amplified by passing through the laser medium. By reciprocating in the resonator, the laser beam is output as linearly polarized light in the P-polarization direction. In an ArF laser (wavelength: 193.368 nm), the refractive index of calcium fluoride is 1.501958 at 20 ° C., so the Brewster angle is 56.336 degrees. In the F2 laser (wavelength 157.63 nm), the refractive index of calcium fluoride is 1.559261 at 20 ° C., so the Brewster angle is 57.318 degrees.

In a narrow band laser, in order to narrow a spectral line width, a beam is expanded by a prism and incident on a grating which is a wavelength dispersion element. A plurality of prisms are often used. The incident surface of each prism is coated with a P-polarized AR (Anti-Reflection) film to transmit almost 100% of the P-polarized component with respect to the incident angle of light in order to prevent output reduction due to Fresnel reflection. Yes. In this P-polarized AR film, the light of the S-polarized component is greatly reflected. As a result, the purity of the P-polarized component of the laser light output from the narrow-band laser is higher than that of a free-running laser that does not include an LNM.
Feasibility of immersion lithography, S. Owa, et al., Procceding of SPIE Vol. 5377

(Change in polarization purity and orientation in two-stage laser)
In the two-stage laser, the energy density of laser light emitted from the OSC is several mJ / cm ² , but the energy density of laser light emitted from the AMP is several tens mJ / cm ² . Since a high energy density beam is transmitted through the window of the AMP chamber, the window absorbs a lot of light on the surface and inside and generates heat. Then, thermal stress is generated in the window, and the amount of birefringence in the CaF2 window increases. In general, the phase changes when polarized light passes through a birefringent material. For example, when linearly polarized light passes through a birefringent material, the phase is shifted. As a result, linearly polarized light often becomes elliptically polarized light.

  The emitted light from the OSC serving as the seed light is linearly polarized light. Its polarization purity P is about 99%. Seed light that is linearly polarized light is injected into the AMP and amplified, but the seed light is affected by birefringence when passing through the window of the AMP chamber, and changes from linearly polarized light to elliptically polarized light. Further, the polarization direction may change due to birefringence. Thus, the polarization purity and polarization orientation are not stable.

  Although it is not as large as the window of the AMP chamber, the amount of birefringence may increase even in the window of the OSC chamber, and the polarization purity and polarization direction of the light emitted from the AMP may change. In this case, since the polarization purity and the polarization direction of the seed light itself change, as a result, the polarization purity and the direction of the emitted light from the AMP change.

(Change in polarization due to birefringence)
The influence of the birefringence described above will be further described with reference to FIG.
FIGS. 2A and 2B are diagrams showing a polarization state with a birefringent material as a boundary.
It is assumed that crystal 1 is a birefringent material. When birefringence occurs in the crystal 1, the phase velocity of light propagating in the crystal 1 changes depending on its own polarization direction. When light that is linearly polarized light passes through the birefringent material, two waves that are orthogonal to each other, that is, the P-polarized component and the S-polarized component are out of phase. Therefore, the light that has passed through the birefringent material is not linearly polarized light but is almost elliptically polarized light. For this reason, when birefringence occurs in the crystal 1, the polarization purity P decreases. If the incident linearly polarized light is P-polarized light, the light intensity of the P-polarized component decreases, the light intensity of the S-polarized component increases, and the polarization orientation changes.

  As described above, in the laser apparatus, linearly polarized light in the polarization direction that transmits almost 100% of the window, that is, P-polarized light component, should be amplified. However, if the window is a birefringent material and the amount of birefringence increases, an S-polarized component is generated, and the phases of P-polarized light and S-polarized light are shifted. Therefore, linearly polarized light changes to elliptically polarized light. Since the amount of thermal stress that causes birefringence changes depending on the laser intensity, the amount of S-polarized component generated is not stable.

  The orientations of P-polarized light and S-polarized light are determined by the orientation of the window surface and the orientation of the electric field vector of the incident light. When the crystal 1 is a window, the arrangement as shown in FIGS. 2A and 2B, that is, the normal line of the light incident surface of the crystal (window) 1 (broken line in the figure) and the incident laser optical axis In an arrangement in which the plane including the light beam is parallel to the electric field vector direction of the linearly polarized incident laser light, the vertical direction of the paper surface is the orientation of the P-polarized component, and the direction perpendicular to the paper surface is the orientation of the S-polarized light component. In FIG. 2B, the symbol indicating P-polarized light and the symbol indicating S-polarized light are described at substantially the same position, but this does not mean that the P-polarized light and the S-polarized light have the same phase. In reality, the phases may be different from each other by the amount of elliptically polarized light depending on the degree of birefringence. The same is true when the same symbols are used in other drawings.

(S-polarized component amplification process)
FIG. 3 is a diagram for explaining the polarization amplification process. 3 assumes that the seed light traveling back and forth in the AMP is light propagating in one direction (right direction in the drawing), and corresponds to the light propagation position and the intensities of P-polarized light and S-polarized light (upper drawing). Thus, the concept of the polarization amplification process is shown.

The amplification process of P-polarized light and S-polarized light in AMP will be described with reference to FIG.
Suppose that seed light of linearly polarized light from the OSC (P-polarized direction with respect to the Brewster window of the AMP chamber) is injected into the AMP of the two-stage laser. When the seed light is transmitted through the window 21b on the rear side of the AMP chamber 21, it is affected by the birefringence of the window 21b, and a part of the incident P-polarized light is changed to S-polarized light (period t1). As the light passes through the discharge region in the AMP chamber, the light intensity is amplified. At this time, not only the P-polarized component but also the S-polarized component is amplified (period t2). When the light passes through the window 21a on the front side of the AMP chamber 21, 14.86% of the S-polarized light decreases due to Fresnel reflection at the Brewster angle due to reflection loss. However, due to the birefringence of the windows 21a and 21b, part of the P-polarized component is changed to the S-polarized component. For this reason, since the P-polarized light decreases and the S-polarized light increases, the amount of the S-polarized light changes by the difference between the increase and decrease of the S-polarized light (period t3).

  The light reaches an AMP front mirror (not shown). 70 to 50% of the light is transmitted to the outside through the front mirror, and 30 to 50% is reflected and propagates to the rear side. At this point, P-polarized light and S-polarized light are already mixed. When the light is reflected by the front mirror and passes through the window 21a, the S-polarized light is reduced by Fresnel reflection, but part of the P-polarized component is changed to the S-polarized component due to the birefringence of the window 21a. For this reason, the P-polarized light decreases, and the S-polarized light increases by the decrease of the P-polarized light (period t4). When the light passes through the discharge region, the S-polarized component is also amplified (period t5). Further, when light passes through the window 21b, the S-polarized light is reduced by Fresnel reflection, but a part of the P-polarized component is changed to the S-polarized component by the birefringence of the window 21b. Therefore, the P-polarized light decreases and the S-polarized light increases (period t6). The light reaches an AMP rear mirror (not shown), and is emitted to the outside through the same process as t1 to t6 (t7 to t9).

  FIG. 3 shows a form in which light is emitted 1.5 times back and forth inside the resonator for the sake of simplicity. In practice, however, the light is emitted back and forth 1.5 times or more in the resonator. The observed laser pulse is the integral of the light emitted by reciprocating within the resonator several times, 1.5 reciprocations, 2.5 reciprocations, 3.5 reciprocations.

  As described above, in the two-stage laser, the narrow band laser beam is amplified by the AMP, so that the amount of birefringence of the window of the AMP chamber increases, so that the polarization state and the polarization direction of the laser beam are unstable. is there. In the exposure of a semiconductor wafer, linearly polarized light having a specific polarization direction is required, so that it is not desirable that the polarization state and the polarization direction of laser light are unstable.

  In the first place, even if linearly polarized light is stably emitted from the AMP, if the position of the window attached to the AMP chamber is not accurate, the direction of the laser light emitted from the two-stage laser will deviate from the desired direction. .

  The present invention has been made in view of such a situation, and an object of the present invention is to obtain a laser beam having a linear polarization and a desired polarization direction when using a two-stage laser.

The first invention is
An oscillation stage that generates laser light and emits it with a narrow band; and
One or more amplification stages that are arranged in series behind the oscillation stage and amplify and emit the laser light emitted from the previous stage;
Two laser beams that are provided on the optical axis of the amplification stage or on the optical axis after the amplification stage so as to be rotatable about the optical axis of the laser light incident on the laser beam are orthogonal to each other. And a polarizer that emits light separated into linearly polarized components.

The second invention is
An oscillation stage that generates laser light and emits it with a narrow band; and
One or more amplification stages that are provided in series after the oscillation stage and amplify and emit laser light emitted from the previous stage;
A laser that is provided on the optical axis between the oscillation stage and the amplification stage or on the optical axis after the amplification stage in a state of being rotatable about the optical axis of the laser light incident on itself, and incident on itself And an optical element that emits light in a polarization direction corresponding to its rotation angle.

3rd invention is 1st, 2nd invention,
A polarization azimuth measuring means for extracting a part of the laser light emitted from the last amplification stage and measuring the polarization azimuth of the extracted laser light is provided.

A fourth invention is the first invention,
A polarization direction measuring means for extracting a part of the laser light emitted from the last amplification stage and measuring the polarization direction of the extracted laser light;
Using the measurement result of the polarization direction measuring means, and an angle adjusting means for adjusting the rotation angle of the polarizer so that the polarization direction of the laser light emitted from the last amplification stage becomes a desired direction, It is characterized by having.

The fifth invention is the second invention,
A polarization direction measuring means for extracting a part of the laser light emitted from the last amplification stage and measuring the polarization direction of the extracted laser light;
Using the measurement result of the polarization direction measuring means, an angle adjusting means for adjusting the rotation angle of the optical element so that the polarization direction of the laser light emitted from the last amplification stage becomes a desired direction; It is characterized by having.

The sixth invention is the first invention, the second invention,
It is characterized by comprising polarization state measuring means for extracting a part of the laser light emitted from the final amplification stage and measuring the degree of linear polarization of the extracted laser light.

A seventh invention is the first invention,
The amplification stage includes a chamber having windows for passing laser beams facing each other,
The polarizer has a polarization separation film on a CaF2 substrate and is provided on the optical axis after the chamber.

In an eighth aspect based on the first aspect,
The amplification stage includes a chamber having windows for passing laser beams facing each other,
The polarizer is characterized in that a polarization separation film is applied to the window of the chamber.

A ninth invention is the first invention,
The amplification stage includes a chamber having windows for passing laser beams facing each other,
The polarizer is characterized in that a polarization separation film is applied to the inclined surface of a beam expander prism, and is provided on the optical axis after the chamber.

  The present invention includes a polarizer that is rotatable about the optical axis on the optical axis in the AMP (amplification stage) or on the optical axis after the AMP. The polarizer separates the laser beam into two linearly polarized components that are orthogonal to each other, that is, a P-polarized component and an S-polarized component, and emits the laser beam. When light in a desired direction is required on the exposure apparatus side, the polarizer is rotated so that the desired direction and the direction of the P-polarized light component of the polarizer coincide.

  The present invention also includes a half-wave plate that is rotatable about the optical axis between the OSC (oscillation stage) and the AMP (amplification stage) or on the optical axis after the AMP. The half-wave plate emits the laser light with the polarization direction corresponding to its rotation angle. When light having a desired direction is required on the exposure apparatus side, the half-wave plate is rotated so that the directions of the laser beams emitted from the half-wave plate coincide. The half-wave plate may be an optical element that can change the polarization direction. For example, two quarter wave plates may be used.

  According to the present invention, for example, a rotatable half-wave plate or a rotatable polarizer is used, so that the polarization direction can be controlled with high accuracy. When a polarizer is used, an ideal high-purity laser output can be obtained due to the polarization selectivity. If the laser beam emitted from the AMP is linearly polarized light, a half-wave plate is used, and if it is elliptically polarized light, a polarizer is used to obtain linearly polarized laser light having a desired polarization direction. be able to.

  Embodiments of the present invention will be described below with reference to the drawings.

  In some cases, the polarization purity P of the laser light emitted from the AMP is equal to or higher than an allowable value, and the polarization purity P need not be improved. However, even in such a case, the polarization direction is not always the desired direction. If possible, it is desirable that the polarization direction of the laser light emitted from the AMP is variable in accordance with the polarization direction required on the exposure apparatus side. This embodiment is suitable when it is desired to control only the direction of the laser beam emitted from the AMP.

FIG. 4 is a diagram illustrating the configuration of the two-stage laser according to the first embodiment.
The two-stage laser 200 of this embodiment includes a half-wave plate 41, a rotary stage 42, a beam sampling element 43, a polarization monitor 44, and a controller 45 in addition to the configuration of the two-stage laser 100 shown in FIG. Is. Since the OSC 10 and the AMP 20 have the same configuration as the conventional one, the description thereof is omitted below.

  The half-wave plate 41 is provided on the optical axis after the AMP 20 while being attached to the rotary stage 42. The rotary stage 42 rotates the half-wave plate 41 around the output optical axis of the AMP 20. The beam sampling element 43 is an optical element that branches the laser light, and is provided on the optical axis after the half-wave plate 41. The polarization monitor 44 is provided at a position where one of the lights branched by the beam sampling element 43 can be taken. The controller 45 takes in the output signal of the polarization monitor 44, calculates the angle at which the half-wave plate 41 should be rotated, and outputs a drive signal corresponding to the calculation result to the rotary stage 42.

  Here, the half-wave plate 41, the beam sampling element 43, and the polarization monitor 44 will be described.

(Operation of half-wave plate)
FIG. 5 is a diagram for explaining the operation of the half-wave plate.
The half-wave plate 41 has a function of changing the direction of linearly polarized light. As shown in FIG. 5, the half-wave plate 41 has a high-speed axis and a low-speed axis that are orthogonal to each other. Is output as linearly polarized light L ′ having an azimuth angle of −2θ. Therefore, when the direction of the linearly polarized light emitted from the half-wave plate 41 is rotated by θ, the half-wave plate 41 may be rotated by −½θ around the optical axis.

  Even if two quarter-wave plates are arranged in series, the same effect as the half-wave plate 41 can be obtained.

(Beam sampling)
FIG. 6 is a diagram showing one form of beam sampling.
As the beam sampling element 43 shown in FIG. 4, a wedge substrate 43-1 made of CaF2 is used. The wedge substrate 43-1 has an Sa surface and an Sb surface facing the Sa surface at an arbitrary angle so as to face each other, and the main beam 46 is incident substantially perpendicularly (≠ vertically) to the Sa surface. Is provided. If the incident angle of the main beam 46 increases to some extent, the intensity ratio of the P-polarized light and the S-polarized light of the reflected light 47 on the Sa surface changes, which is not preferable. If the Sa plane is substantially orthogonal to the optical axis of the main beam 46, the incident angle of the main beam 46 does not become so large, so that the intensity ratio of the P-polarized light and the S-polarized light of the reflected light 47 is Compared with the intensity ratio of polarized light, it becomes almost equal.

  A polarization monitor 44 is provided on the optical axis of the reflected light 47. The polarization monitor 44 performs the measurement described later.

  In the wedge substrate 43-1, the reflection of the main beam 46 also occurs on the Sb surface in addition to the Sa surface. Since the wedge substrate 43-1 has a wedge shape, the reflected light 48 on the Sb surface is not taken into the polarization monitor 44. In the case where a parallel substrate is used instead of the wedge substrate 43-1, it is desirable to apply an anti-reflection coating on the Sb surface. The anti-reflection coating is provided to reduce the amount of reflected light 48 incident on the monitor 44.

FIG. 7 is a diagram showing another form of beam sampling.
As the beam sampling element 43 shown in FIG. 4, two wedge substrates 43-2 and 43-3 made of CaF2 are used. The wedge substrate 43-2 has an Sa2 surface as an incident surface and an Sb2 surface that is inclined by an arbitrary angle with respect to the Sa2 surface so that the main beam 46 is incident on the Sa2 surface at an incident angle of about 45 degrees. Provided. The wedge substrate 43-3 has an incident surface Sa3 surface and an Sb3 surface opposed to the Sa3 surface by an arbitrary angle, and the reflected light 47 on the Sa2 surface is incident on the Sa3 surface at an incident angle of about 45 degrees. It is provided so as to be incident. The main beam 46 is reflected by the Sa2 surface to become reflected light 47, and reflected by the Sa3 surface to become reflected light 50. Of the polarization components of the main beam 46, the component reflected as P-polarized light on the Sa2 plane is reflected as S-polarized light on the Sa3 plane. Similarly, of the polarization components of the main beam 46, the component reflected as S-polarized light on the Sa2 plane is reflected as P-polarized light on the Sa3 plane. That is, as a result of reflection on the Sa2 plane and Sa3 plane, changes in the intensity ratio of P-polarized light and S-polarized light are canceled out. Therefore, the intensity ratio between the P-polarized light and the S-polarized light of the main beam 46 and the reflected light 50 is substantially equal. For example, when the incident angle is 45 degrees, the reflectance of the P-polarized component is 0.0086, whereas the reflectance of the S-polarized component is 0.093. With the arrangement shown in FIG. 7, one of the polarization components of the main beam 46 is reflected as P-polarized light on the Sa2 plane and reflected as S-polarized light on the Sa3 plane, so that the total reflectance is 0.0086 ×. 0.093 = 0.008. The other of the polarization components of the main beam 46 is reflected as S-polarized light on the Sa2 surface and reflected as P-polarized light on the Sa3 surface, so that the total reflectance is 0.093 × 0.0086 = 0.008. As described above, the final reflectances of the P-polarized light and the S-polarized light are substantially equalized by the two wedge substrates 43-2 and 43-3.

  A polarization monitor 44 is provided on the optical axis of the reflected light 50. The polarization monitor 44 performs the measurement described later.

  Similar to the wedge substrate 43-1 in FIG. 6, the wedge substrates 43-2 and 43-3 have a wedge shape, so that the reflected light on the Sb2 surface and the Sb3 surface is not taken into the polarization monitor 44. In the case where a parallel substrate is used instead of the wedge substrates 43-2 and 43-3, it is desirable to apply an anti-reflection coating to the Sb2 surface and the Sb3 surface. The anti-reflection coating is provided to reduce the influence of the reflected light 48.

(Polarization monitor)
The polarization monitor 44 is a module for measuring the purity and orientation of the polarization of the laser light, and has a function equivalent to a so-called general polarimeter. Each of the three types of polarization monitors 44 described here includes a polarizer. Thus, before describing the polarization monitor 44, five specific types of polarizers will be described with reference to FIGS.

  A polarizer separates light incident on itself into two orthogonally polarized components according to its installation angle, and emits one polarized component with its propagation direction substantially unchanged, and the other polarized light. The component is emitted while changing its propagation direction. For a polarizer, the polarization component whose propagation direction does not change is the P polarization component, and the polarization component whose propagation direction changes is the S polarization component. The orientation of the P-polarized component changes with the rotation of the polarizer about the incident optical axis.

FIG. 8 is a diagram showing a polarizer of the first form.
The first form of polarizer is a polarizing beam splitter. The polarizer 51 includes a CaF 2 parallel plane substrate 52 and a polarization separation film 53 coated on the surface Sa surface of the parallel plane substrate 52. The polarization separation film 53 transmits P-polarized light and reflects S-polarized light. As shown in FIG. 8, the closer the incident angle of the laser light to the polarization separation film 53 is to the Brewster angle, the more the P-polarized light transmittance on the back surface Sb surface of the parallel flat substrate 52 is improved and the efficiency is improved. Similarly, if the Sb surface is coated with a P-polarized anti-reflection film, the efficiency is improved. The Sb surface may be coated with the same polarization separation film as the Sa surface to improve the extinction ratio as a polarizer.

FIG. 9 is a diagram showing a polarizer of the second form.
The second form of polarizer is a Rochon prism. The polarizer 55 includes a first prism 56 and a second prism 57 made of a birefringent crystal. The slopes of the first prism 56 and the second prism 57 are in contact with each other. The orientation of the optical principal axis of the first prism 56 is perpendicular to the incident light and parallel to its slope. The orientation of the optical principal axis of the second prism 57 is parallel to the incident light. The polarizer 55 separates the P-polarized light and the S-polarized light of the incident laser light. The laser light is incident on the incident surface Sa of the first prism 56, travels straight through the first prism 56, and is separated into P-polarized light and S-polarized light by the inclined surface of the second prism 57. The P-polarized light travels straight through the second prism 57 and is emitted from the exit surface Sb of the second prism 57. The traveling direction of the S-polarized light is slightly changed on the slope of the second prism 57, travels straight through the second prism 57, and is emitted from the exit surface Sb surface of the second prism 57. If an aperture 58 for shielding S-polarized light is provided on the output side of the second prism 57, highly pure linearly polarized light can be obtained. A suitable material for the first and second prisms 56 and 57 is magnesium fluoride crystal. Further, by coating the anti-reflection film on the surface on which light is incident vertically such as the Sa surface and the Sb surface, the polarized light can be separated with less loss. Although not shown, the Rochon prism in which a gap is provided between the first prism 56 and the second prism 57 also has the same function, and this can also be used.

FIG. 10 is a diagram showing a polarizer of the third form.
The polarizer of the third form is a type in which two first polarizers are combined. The polarizer 61 includes a CaF 2 substrate 62, a polarization separation film 63 coated on the surface Sa surface of the substrate 62, and a polarization separation film 64 coated on the surface Sb surface of the substrate 62. In the polarizer 61, the polarization separation films 63 and 64 are coated on the common substrate 61, but may be coated on different substrates. With the configuration like the polarizer 61, only the P-polarized light can pass through without shifting the optical axis.

FIG. 11 is a diagram showing a fourth form of polarizer.
The polarizer of the fourth form is an example of a polarizing beam splitter. The polarizer 66 includes an isotropic first prism 67 and second prism 68 and a polarization separation film 69. The slopes of the first prism 67 and the second prism 68 are opposed to each other through the polarization separation film 69. By coating the anti-reflection film on a surface on which light is incident vertically such as the Sa surface and the Sb surface, polarized light can be separated with less loss.

FIG. 12 is a diagram showing a fifth form of polarizer.
The fifth form of polarizer is a Glan Laser prism. The polarizer 71 includes a first prism 72 and a second prism 73 made of a birefringent crystal. The slopes of the first prism 72 and the second prism 73 are opposed to each other with a predetermined distance. The orientations of the optical principal axes of the first prism 72 and the second prism 73 are perpendicular to the incident light and perpendicular to the incident surface Sa, and the normals of the inclined surfaces of the first and second prisms. Parallel to the plane containing The laser light is incident on the incident surface Sa of the first prism 72, travels straight through the first prism 72, and is separated into P-polarized light and S-polarized light by the inclined surface of the second prism 73. The P-polarized light travels straight through the second prism 73 and is emitted from the exit surface Sb of the second prism 73. S-polarized light is reflected by the slope of the second prism 73, travels straight through the first prism 72, and is emitted from the exit surface Sc surface of the first prism 72. As a material of the first and second prisms 72 and 73, α-BBO crystal is suitable. Further, by coating the anti-reflection film on the surface on which light is incident vertically such as the Sa surface and the Sb surface, the polarized light can be separated with less loss.

  A specific polarizer has been described above, but any type of polarizer can be used as long as it can separate P-polarized light and S-polarized light. Next, a polarization monitor 44 using such a polarizer will be described.

[1. First form of polarization monitor)
FIG. 13 is a diagram showing the configuration of the polarization monitor of the first embodiment.
This embodiment is a polarization monitor 44-1 that obtains the polarization azimuth angle Φ and the linear polarization purity P by measuring the Stokes parameters S0, S1, and S2. The polarization monitor 44-1 includes the polarizer 55 shown in FIG. 9 and first and second optical sensors 75 and 76. The polarizer 55 is attached to a rotation stage (not shown) and is rotatable about the incident optical axis. The first optical sensor 75 is provided on the optical axis of S-polarized light emitted from the polarizer 55, and the second optical sensor 76 is provided on the optical axis of P-polarized light emitted from the polarizer 55. In this embodiment, since the optical axis of the S-polarized light moves with the rotation of the polarizer 55, a drive mechanism for changing the position of the first optical sensor 75 following the movement of the polarizer 55 is provided. The optical sensors 75 and 76 may be a single light receiving element, or may be one in which the light receiving elements are arranged one-dimensionally or two-dimensionally. For example, a CCD line sensor or a MOS area sensor can be used. In this case, the state of the polarization distribution can be measured for each location of the laser beam, that is, in a cross section orthogonal to the optical axis of the laser beam.

  The Stokes parameters S0, S1, S2 are defined as follows. The following explanation is general. Taking the field of semiconductor exposure as an example, it is desirable that the linear polarization direction of the electric field of the AMP emitted light of the present invention be orthogonal to the direction of gravity.

S0: Total intensity (sum of P-polarized light and S-polarized light intensity)
S1: Intensity difference between x component and y component (difference in intensity between P-polarized light and S-polarized light when the rotation angle of the polarizer 55 is 0 degree)
S2: Intensity difference between +45 degree component and -45 degree component (difference in intensity between P-polarized light and S-polarized light when the rotation angle of the polarizer 55 is +45 degrees)
The polarization azimuth angle Φ and the linear polarization purity P are calculated by the following equations (2) and (3) using the parameters S0, S1, and S2.
Φ = 1/2 · tan ⁻¹ (S2 / S1) (2)
P = [√ {(S1 ⁻² + S2 ⁻² ) / S0 ⁻² }] × 100 (3)
Here, the process of obtaining the azimuth angle Φ and the linear polarization purity P will be described with reference to FIG.

FIG. 14 is a flowchart showing a process for obtaining the azimuth angle Φ and the linear polarization purity P.
First, the rotation angle of the polarizer 55 is set to 0 degree. This 0 degree means that the deviation of the reference direction of the polarizer 55 from the desired polarization orientation is 0 degree. For example, in the aforementioned semiconductor exposure field, the direction perpendicular to the direction of gravity, that is, the horizontal direction is 0 degree. S-polarized light of the laser light is captured by the first optical sensor 75, and P-polarized light is captured by the second optical sensor 76. The first optical sensor 75 measures the light intensity Sout1, and the second optical sensor 76 measures the light intensity Sout2. And
S0 = Sout1 + Sout2 (4)
S1 = Sout1-Sout2 (5)
Thus, S0 and S1 are obtained (step S11).

Next, the rotation angle of the polarizer 55 is set to +45 degrees. Similarly to step S <b> 11, the S-polarized light of the laser light is captured by the first optical sensor 75, and the P-polarized light is captured by the second optical sensor 76. The first optical sensor 75 measures the light intensity Sout1, and the second optical sensor 76 measures the light intensity Sout2. And
S2 = Sout1-Sout2 (6)
S2 is obtained by the above calculation (step S12).

  The obtained parameters S0, S1, and S2 are substituted into the above equations (2) and (3), and the azimuth angle Φ and the linear polarization purity P are obtained (step S13).

  In addition, although the case where the polarizer 55 shown in FIG. 9 is used for the polarization monitor 44-1, the respective polarizers shown in FIGS. 8 and 10 to 12 may be used. In each case, the arrangement of the first photosensor 75 and the second photosensor 76 is changed.

[2. Second form of polarization monitor)
FIG. 15 is a diagram showing the configuration of the polarization monitor of the second embodiment.
Similar to the polarization monitor 44-1, this embodiment is also a polarization monitor 44-2 for obtaining the polarization azimuth angle Φ and the linear polarization purity P by measuring the Stokes parameters S0, S1, and S2. Since the structure and principle of the polarization monitor 44-2 are described in detail in the document K. Kawano and A. Nagashima, Rev. Sci. Instrum. 68, 4035 (1997), detailed description is omitted here.

  The polarization monitor 44-2 includes two PEMs (Photo Elastic Modulators) 78 and 79 arranged at 0 and 45 degrees, a polarizer 51 arranged at 22.5 degrees, an optical sensor 80, and the like. Is composed of. The laser light passes through the PEMs 78 and 79 and the polarizer 51 and is taken into the optical sensor 80. The two PEMs 78 and 79 are modulated with different frequencies f1 and f2, and the frequencies of the two lock-in amplifiers 81 and 82 are set to 2f1 and 2f2, thereby amplifying the signal obtained from the optical sensor 80. Then, signals of V2f1 corresponding to the light intensity Sout1 and V2f2 corresponding to the light intensity Sout2 are obtained. Accordingly, the parameters S0, S1, and S2 are obtained from the above equations (4), (5), and (6), and the azimuth angle Φ and the linear polarization purity P are obtained from the above equations (2) and (3).

  In the polarization monitor 44-1, the parameters S0, S1, and S2 are obtained by mechanically driving the polarizer 55, whereas in the polarization monitor 44-2, the parameters S0, S1, and S2 are obtained by controlling the frequency. Since the polarization monitor 44-2 has no mechanical operation part, it can measure at a higher speed than the polarization monitor 44-1.

  In addition, although the case where the polarizer 51 shown by FIG. 8 was used for the polarization monitor 44-2 was demonstrated, each polarizer shown by FIGS. 9-12 may be used. The optical sensor 80 may be a single light receiving element, or may be one in which the light receiving elements are arranged one-dimensionally or two-dimensionally.

  Incidentally, as the PEMs 78 and 79 used in this embodiment, commercial products provided by HINDS (USA) and the like can be used.

[3. (Third form of polarization monitor)
FIG. 16 is a diagram showing the configuration of the polarization monitor of the third embodiment.
The present embodiment is a polarization monitor 44-3 that searches for an azimuth (polarization azimuth angle Φ) that maximizes the extinction ratio by rotating the polarizer and further obtains the linear polarization purity P. The polarization monitor 44-3 includes the polarizer 51 shown in FIG. The polarizer 51 is attached to a rotation stage (not shown) and is rotatable about the incident optical axis. The optical sensor 84 is provided on the optical axis of P-polarized light emitted from the polarizer 51. Instead of the optical sensor 84, an optical sensor 85 may be provided. The optical sensor 85 is provided on the optical axis of S-polarized light emitted from the polarizer 51. In this embodiment, since the optical axis of the S-polarized light moves with the rotation of the polarizer 51, a drive mechanism that changes the position of the optical sensor 85 following the rotation of the polarizer 51 is provided. The optical sensors 84 and 85 may be a single light receiving element, or may be one in which the light receiving elements are arranged one-dimensionally or two-dimensionally. For example, a CCD line sensor or a MOS area sensor can be used.

  Here, the process of obtaining the azimuth angle Φ and the linear polarization purity P will be described with reference to FIG.

FIG. 17 is a flowchart showing a process of obtaining the azimuth angle Φ and the linear polarization purity P.
First, the rotation angle of the polarizer 51 is set to 0 degree. This 0 degree means that the deviation of the reference direction of the polarizer 55 from the desired polarization orientation is 0 degree. The P-polarized light of the laser light is taken into the optical sensor 84. The optical sensor 84 measures the light intensity Sout. The polarizer 51 is rotated within a range of the rotation angle of ± 90 degrees, and the light intensity Sout is measured at a plurality of rotation positions within the range of ± 90 degrees. The light intensity Sout measured at each rotational position is stored (step S21).

FIG. 18 is a diagram showing the relationship between the rotation angle of the polarizer and the output of the optical sensor.
When the horizontal axis represents the rotation angle of the polarizer 51 and the vertical axis represents the light intensity Sout, a curve c as shown in FIG. 18 is obtained in step S21. This curve c is represented by the cosine function Acos ² (θ + Φ) + B (step S22). A is the amplitude of the curve c, and B is the minimum light intensity of the curve c. The azimuth angle Φ is a rotation angle when the maximum light intensity of the curve c is obtained, and is obtained from the phase of the cosine function. The linear polarization purity P is
P = {A / (A + 2B)} × 100 (7)
(Step S23).

  Note that the processing shown in FIG. 17 may be performed using the optical sensor 85 instead of using the optical sensor 84. Moreover, although the case where the polarizer 51 shown by FIG. 8 was used for the polarization monitor 44-3 was demonstrated, each polarizer shown by FIGS. 9-12 may be used.

  The half-wave plate 41, the beam sampling element 43, and the polarization monitor 44 have been described above. By the way, the polarization monitor 44 needs to be calibrated. Specifically, a polarization measuring instrument as a prototype for measuring the absolute azimuth of polarized light is installed outside the two-stage laser 100, and the polarization azimuth of the laser light is measured with the polarization measuring instrument and the polarization monitor 44, The measured values of the polarization azimuth obtained by the polarimeter and the polarization monitor 44 are compared, and the difference is corrected by the controller 45 and stored.

  Next, a procedure for setting the polarization direction of the laser light emitted from the two-stage laser 200 to a desired direction will be described with reference to FIGS.

FIG. 19 is a flowchart showing the measurement procedure of Example 1.
The laser light emitted from the AMP 20 passes through the half-wave plate 41 and is partially reflected by the beam sampling element 43. The reflected light is taken into the polarization monitor 44. The polarization monitor 44 measures the polarization azimuth angle Φ of the laser light emitted from the half-wave plate 41, converts the measured value into a signal, and outputs the signal to the controller 45. The controller 45 calculates a difference DA between the measured polarization azimuth angle Φ and a desired azimuth angle DA0 (step S31). If | DA | <1 degree (arbitrary angle), the measurement of the polarization azimuth angle Φ is continued (Yes in step S32). When | DA | ≧ 1 degree, the controller 45 outputs a command signal to the rotary stage 42. The rotation stage 42 rotates the half-wave plate 41 by −DA / 2 according to the command signal. Then, the measurement of the polarization azimuth angle Φ is continued (No in Step S32, Step S33). Through the above processing, the polarization azimuth angle Φ is shifted by less than ± 1 degree with respect to the desired azimuth angle DA0.

  In this embodiment, the beam sampling element 43 is provided after the half-wave plate 41, but the beam sampling element 43 may be provided before the half-wave plate 41. In this case, step S32 shown in FIG. 19 is not necessary.

  According to this embodiment, the polarization direction can be controlled by the rotatable half-wave plate 41. Accordingly, linearly polarized light having a stable polarization direction can be obtained.

  The present embodiment is effective when the polarization purity P of the laser light emitted from the AMP 20 is equal to or higher than an allowable value, that is, when the laser light is substantially linearly polarized, but the polarization of the laser light emitted from the AMP 20 is not limited. It is possible that the purity P is less than an acceptable value. In preparation for such a case, a control system may be constructed in which the operation of the laser apparatus and / or the exposure apparatus is stopped after the polarization purity P less than the allowable value is measured by the polarization monitor 44.

  This embodiment is equivalent to improving the polarization purity P of the laser light emitted in the first embodiment.

FIG. 20 is a diagram illustrating a configuration of a two-stage laser according to the second embodiment.
The two-stage laser 300 of the present embodiment is obtained by replacing the positions of the half-wave plate 41 and the rotary stage 42 and the position of the beam sampling element 43 in the configuration of the two-stage laser 200 shown in FIG. Further, a polarizer 87 attached to the rotary stage 88 is provided on the optical axis after the half-wave plate 41. In addition, the same code | symbol is attached | subjected to the component which has the same function as the component of Example 1, and description is abbreviate | omitted.

  The polarizer 87 is provided on the optical axis after the half-wave plate 41. The rotary stage 88 rotates the polarizer 87 around the output optical axis of the AMP 20. As the polarizer 87, each polarizer shown in FIGS. 8 to 12 can be applied. In order to improve the polarization purity P, the use of the polarizer 51 shown in FIG.

The P-polarized light selectivity Sp and the S-polarized light selectivity Ss of the polarizer 51 are expressed as follows, where the transmittance of S-polarized light is Ts and the transmittance of P-polarized light is Tp.
Sp = Tp / (Tp + Ts)
Ss = Ts / (Tp + Ts)
It is represented by As Tp / Ts increases, P-polarized light is selected and transmitted. That is, high-purity P-polarized light can be obtained.

  As the polarization separation film 53, for example, a dielectric multilayer film in which MgF2 thin films and LaF3 thin films are alternately laminated is desirable. According to the dielectric multilayer film, the P-polarization selectivity Sp can be controlled by each film thickness and the number of layers.

  For example, if the polarizer 51 having an extinction ratio of Tp: Ts = 500: 1 is used, even if the P polarization purity of the light emitted from the AMP 20 deteriorates to 50% due to the occurrence of birefringence of the windows 21a and 21b, The P polarization purity can be improved to 99.8% or more.

  The number of polarizers 51 is desirably determined by the required value of P polarization purity, the worst value of P polarization purity of light emitted from the AMP 20, and the P polarization selectivity Sp of the polarizer 51.

  Further, since the S-polarized light is reflected and lost, in order to obtain a constant laser output, it is necessary to increase the output of the AMP 20 to compensate for the loss of the S-polarized light. It is also desirable to absorb (dump) the reflected S-polarized light so that it does not become extra stray light.

  By the way, when high intensity light is irradiated to the CaF2 parallel plane substrate 52, birefringence may occur in the parallel plane substrate 52 itself, and the polarization of the laser light may change. Therefore, it is necessary that the amount of decrease of the S polarization component in the polarization separation film 53 is larger than the amount of increase of the S polarization component in the parallel plane substrate 52. Since the increase amount of the S polarization component increases with the thickness of the CaF2 base material, the thickness of the parallel plane substrate 52 is preferably as thin as possible. Further, the polarization separation film 53 may be coated on both surfaces of the parallel flat substrate 52. According to the polarization separation film 53 on both sides, even if the polarization changes inside the parallel plane substrate 52 and an S polarization component is generated, the S polarization component is converted into the polarization separation film 53 when light is emitted to the outside of the parallel plane substrate 52. As a result, only the P-polarized light component is emitted as a result. In the case of CaF2, when light propagates parallel to the crystal orientation <111> direction, intrinsic birefringence becomes zero and stress birefringence is minimized. Therefore, the beam traveling direction in the parallel plane substrate 52 may be designed to be the crystal orientation <111> axis of the parallel plane substrate 52. As the crystal orientation, any one of <100>, <010>, and <001> having a small intrinsic birefringence can be used in addition to <111>. In addition, if the energy density of the irradiated laser is reduced to reduce the generated thermal stress, the occurrence of birefringence on the parallel plane substrate 52 can be suppressed. Therefore, it is effective to increase the beam incident angle to the polarizer 51 and increase the cross-sectional area of the irradiated beam to reduce the energy density. In this case, it is necessary to manufacture the polarization separation film 53 for a large incident angle.

FIG. 21 is a flowchart showing the measurement procedure of Example 2.
The rotation stage 88 rotates the polarizer 87 so that the azimuth of the P-polarized light becomes a desired azimuth angle. As described above, in the field of semiconductor exposure, the desired azimuth is a direction orthogonal to the direction of gravity, that is, the horizontal direction (step S41). The rotary stage 42 rotates the half-wave plate 41 so that the angle of the high-speed axis becomes a desired azimuth angle DA0 (step S42). Part of the laser light emitted from the AMP 20 is reflected by the beam sampling element 43 and the rest is transmitted. The reflected light is taken into the polarization monitor 44, and the transmitted light is transmitted through the half-wave plate 41 and the polarizer 87. The polarization monitor 44 measures the polarization azimuth angle Φ of the laser light emitted from the AMP 20, converts the measured value into a signal, and outputs the signal to the controller 45. The controller 45 calculates a difference DA between the measured polarization azimuth angle Φ and a desired azimuth angle DA0 (step S43). The controller 45 outputs a command signal to the rotary stages 42 and 87. The rotation stage 42 rotates the half-wave plate 41 by −DA / 2 according to the command signal (step S44).

  In the present embodiment, the beam sampling element 43 is provided before the half-wave plate 41 and the polarizer 87, but the beam sampling element 43 is provided after the half-wave plate 41 and the polarizer 87. Also good. In this case, step S32 shown in FIG. 19 may be added between step S43 and step S44 shown in FIG. Further, the position of the half-wave plate 41 and the position of the polarizer 87 may be reversed, but in this case, the loss is slightly increased as compared to the previous embodiment described above.

  According to this embodiment, the polarization direction can be controlled by the rotatable half-wave plate 41, and ideal high-purity laser output can be obtained by the polarization selectivity of the polarizer 87. Accordingly, linearly polarized light having a stable polarization direction can be obtained.

  As in the first embodiment, the third embodiment is suitable for the case where the polarization direction of the laser light emitted from the AMP is high and does not require improvement of the polarization purity P, but the polarization direction is desired.

FIG. 22 is a diagram illustrating a configuration of a two-stage laser according to the third embodiment.
In the two-stage laser 300 of this embodiment, the half-wave plate 41 and the rotary stage 42 that are located after the AMP 20 in the configuration of the two-stage laser 200 shown in FIG. 4 are between the OSC 10 and the AMP 20. It is what is located. In addition, the same code | symbol is attached | subjected to the component which has the same function as the component of Example 1, 2, and description is abbreviate | omitted.

FIG. 23 is a flowchart showing the measurement procedure of Example 3.
The rotation stage 42 rotates the half-wave plate 41 so that the angle of the high-speed axis is the same as the polarization direction of the OSC 10 (step S51). The laser light emitted from the OSC 10 passes through the half-wave plate 41 and enters the AMP 20. Part of the laser light emitted from the AMP 20 is reflected by the beam sampling element 43. The reflected light is taken into the polarization monitor 44. The polarization monitor 44 measures the polarization azimuth angle Φ of the laser light emitted from the AMP 20, converts the measured value into a signal, and outputs the signal to the controller 45. The controller 45 calculates a difference DA between the measured polarization azimuth angle Φ and a desired azimuth angle DA0 (step S52). If | DA | <1 degree (arbitrary angle), the measurement of the azimuth angle Φ is continued (Yes in step S53). When | DA | ≧ 1 degree, the controller 45 outputs a command signal to the rotary stage 42. The rotation stage 42 rotates the half-wave plate 41 by −DA / 2 according to the command signal. When the polarization direction of the seed light incident on the AMP 20 is rotated, the polarization direction of the laser light emitted from the AMP 20 is also rotated accordingly. Then, the measurement of the azimuth angle Φ is continued (No in Step S53, Step S54). Through the above processing, the polarization azimuth angle Φ is shifted by less than ± 1 degree with respect to the desired azimuth angle DA0.

  In the present embodiment, the half-wave plate 41 is rotated, but the OSC 10 itself or the LNM 12 may be rotated around the optical axis by a rotary motor.

  As in the first embodiment, in preparation for the case where the polarization purity P of the laser light emitted from the AMP 20 is less than the allowable value, the polarization purity P less than the allowable value is measured by the polarization monitor 44, and then the laser device and A control system that stops the operation of the exposure apparatus may be constructed.

  According to this embodiment, the polarization direction can be controlled by the rotatable half-wave plate 41. Accordingly, linearly polarized light having a stable polarization direction can be obtained.

FIG. 24 is a diagram illustrating a configuration of a two-stage laser according to the fourth embodiment.
In addition to the configuration of the two-stage laser 100 shown in FIG. 1, the two-stage laser 500 of this embodiment includes a beam sampling element 43, a polarization monitor 44, and a controller 45. Further, the AMP chamber 21 includes rotating stages 90 and 91. The polarizing separation films 92 and 93 are provided. In addition, the same code | symbol is attached | subjected to the component which has the same function as the component of Examples 1-3, and description is abbreviate | omitted.

  The windows 21a and 21b are rotatable around the optical axis. The window 21 a is attached to the rotary stage 90, and the window 21 b is attached to the rotary stage 91. The rotary stages 90 and 91 are attached to the AMP chamber 21 and rotate the windows 21 a and 21 b in response to a command signal from the controller 45. As shown in FIG. 24, if the windows 21a and 21b are tilted symmetrically and have the same rotation angle, the optical axis of the laser light entering and exiting the AMP chamber 21 will not be shifted. For this reason, it is desirable that the rotary stages 90 and 91 rotate the windows 21a and 21b simultaneously and in the same direction.

  At least one surface of the windows 21a and 21b is coated with polarization separation films 92 and 93 that highly reflect the S-polarized component and transmit almost 100% of the P-polarized component. Only the P-polarized light remains on the laser optical axis by the polarization separation films 92 and 93. When the polarization separation films 92 and 93 are coated on both surfaces of the windows 21a and 21b, even if S-polarized light is generated in the base material (CaF2) of the window, the S-polarized light is reflected when it is emitted from the base material to the outside. The Further, when the windows 21a and 21b are arranged so that the traveling direction of the laser light in the base material CaF2 and the <111> axis direction of the CaF2 crystal are coaxial, birefringence is minimized. When the laser resistance of the polarization separation films 92 and 93 is poor, the polarization separation films 92 and 93 may be gradually damaged during laser irradiation. The damage depends on the laser energy density. The higher the energy density, the faster the polarization separation films 92 and 93 are damaged. In order to reduce damage to the polarization separation films 92 and 93, it is necessary to reduce the energy density. In order to reduce the energy density, the area irradiated by the beam may be increased. Specifically, the installation angle of the windows 21a and 21b may be 56 ° or more of the Brewster angle. If the installation angle of the windows 21a and 21b is large, the area on which the beam hits increases, so that the energy density irradiated onto the windows 21a and 21b decreases.

FIG. 25 is a flowchart showing the measurement procedure of Example 4.
A part of the laser light emitted from the AMP 20 is reflected by the beam sampling element 43. The reflected light is taken into the polarization monitor 44. The polarization monitor 44 measures the polarization azimuth angle Φ of the laser light emitted from the AMP 20, converts the measured value into a signal, and outputs the signal to the controller 45. The controller 45 calculates a difference DA between the measured polarization azimuth angle Φ and the desired azimuth angle DA0 (step S61). When | DA | <1 degree (arbitrary angle), the measurement of the azimuth angle Φ is continued (Yes in Step S62). When | DA | ≧ 1 degree, the controller 45 outputs a command signal to the rotary stages 90 and 91. The rotary stage 90 rotates the window 21a by -DA according to the command signal, and the rotary stage 91 rotates the window 21b by -DA according to the command signal. And the measurement of azimuth angle (PHI) is continued (determination No of step S62, step S63). Through the above processing, the polarization azimuth angle Φ is shifted by less than ± 1 degree with respect to the desired azimuth angle DA0. Note that “1 degree” is an example, and the angle range is a specification value determined for each exposure machine.

  According to the present embodiment, the polarization orientation can be controlled by the rotatable polarization separation films 92 and 93, and ideal high-purity laser output can be obtained by the polarization selectivity. Accordingly, linearly polarized light having a stable polarization direction can be obtained.

FIG. 26 is a diagram illustrating a configuration of a two-stage laser according to the fifth embodiment.
The two-stage laser 600 of this embodiment includes a polarizer 95, a rotary stage 96, a beam sampling element 43, a polarization monitor 44, and a controller 45 in addition to the configuration of the two-stage laser 100 shown in FIG. . In addition, the same code | symbol is attached | subjected to the component which has the same function as the component of Examples 1-4, and description is abbreviate | omitted.

  The polarizer 95 is provided on the optical axis of the AMP 20 while being attached to the rotary stage 96. The position of the polarizer 95 is preferably between the AMP chamber 21 and the AMP front mirror 23. The rotation stage 96 rotates the polarizer 95 around the optical axis of the AMP 20. As the polarizer 95, each polarizer shown in FIGS. 8 to 12 can be applied.

  In the measurement procedure of the present embodiment, the polarizer 95 may be rotated instead of rotating the windows 21a and 21b in the measurement procedure shown in FIG.

  According to the present embodiment, the polarization orientation can be controlled by the rotatable polarizer 95, and an ideal high-purity laser output can be obtained by the polarization selectivity. Accordingly, linearly polarized light having a stable polarization direction can be obtained.

FIG. 27 is a diagram showing another form of the fifth embodiment.
In the two-stage laser 600 shown in FIG. 26, instead of the polarizer 95, a polarization beam expander prism (Beam Expander-Prism, hereinafter referred to as BEX) 98 as shown in FIG. Also good. The polarization BEX 98 has one or more prisms. FIG. 27 shows a combination of two prisms 98a and 98b. The polarized light BEX 98 reduces the energy density of the laser light, reduces the damage to the AMP front mirror 23, and changes the laser beam shape (aspect ratio). The polarized light BEX 98 has a role of expanding the width of the laser beam.

  Polarized light separation films 99a and 99b are coated on the inclined surfaces of the prisms 98a and 98b. In addition, an AR film may be coated on a surface other than the inclined surface that becomes an optical path. The prism 98a is arranged so that the laser light from the AMP chamber 21 is incident on its own slope, and the prism 98b is arranged so that the laser light from the prism 98a is incident on its own slope. If the 98b AR film is a PR film, the polarization BEX 98 also serves as the AMP front mirror 23.

  In each of the above embodiments, a two-stage amplification type laser has been described as an example. However, the present invention is also applicable to a multistage amplification type laser having three or more stages. In this case, the position of the half-wave plate and the polarizer is arbitrary, but the beam sampling element is desirably provided after the last AMP. In each embodiment, the polarizer and the half-wave plate may be manually rotated instead of being rotated according to the signal from the controller. Further, the operator may arbitrarily rotate the half-wave plate or the polarizer without performing beam sampling.

FIG. 1 is a diagram showing a simplified configuration of a two-stage laser. FIGS. 2A and 2B are diagrams showing a polarization state with a birefringent material as a boundary. FIG. 3 is a diagram for explaining the polarization amplification process. FIG. 4 is a diagram illustrating the configuration of the two-stage laser according to the first embodiment. FIG. 5 is a diagram for explaining the operation of the half-wave plate. FIG. 6 is a diagram showing one form of beam sampling. FIG. 7 is a diagram showing another form of beam sampling. FIG. 8 is a diagram showing a polarizer of the first form. FIG. 9 is a diagram showing a polarizer of the second form. FIG. 10 is a diagram showing a polarizer of the third form. FIG. 11 is a diagram showing a fourth form of polarizer. FIG. 12 is a diagram showing a fifth form of polarizer. FIG. 13 is a diagram showing the configuration of the polarization monitor of the first embodiment. FIG. 14 is a flowchart showing a process for obtaining the azimuth angle Φ and the linear polarization purity P. FIG. 15 is a diagram showing the configuration of the polarization monitor of the second embodiment. FIG. 16 is a diagram showing the configuration of the polarization monitor of the third embodiment. FIG. 17 is a flowchart showing a process of obtaining the azimuth angle Φ and the linear polarization purity P. FIG. 18 is a diagram showing the relationship between the rotation angle of the polarizer and the output of the optical sensor. FIG. 19 is a flowchart showing the measurement procedure of Example 1. FIG. 20 is a diagram illustrating a configuration of a two-stage laser according to the second embodiment. FIG. 21 is a flowchart showing the measurement procedure of Example 2. FIG. 22 is a diagram illustrating a configuration of a two-stage laser according to the third embodiment. FIG. 23 is a flowchart showing the measurement procedure of Example 3. FIG. 24 is a diagram illustrating a configuration of a two-stage laser according to the fourth embodiment. FIG. 25 is a flowchart showing the measurement procedure of Example 4. FIG. 26 is a diagram illustrating a configuration of a two-stage laser according to the fifth embodiment. FIG. 27 is a diagram showing another form of the fifth embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... OSC 20 ... AMP 41 ... 1/2 wavelength plate 42 ... Rotation stage 43 ... Beam sampling element 44 ... Polarization monitor 45 ... Controller 95 ... Polarizer 96 ... Rotation stage

Claims (9)

An oscillation stage that generates laser light and emits it with a narrow band; and
One or more amplification stages that are arranged in series behind the oscillation stage and amplify and emit the laser light emitted from the previous stage;
Two laser beams that are provided on the optical axis of the amplification stage or on the optical axis after the amplification stage so as to be rotatable about the optical axis of the laser light incident on the laser beam are orthogonal to each other. A multistage amplification laser system comprising: a polarizer that divides and emits linearly polarized light components. An oscillation stage that generates laser light and emits it with a narrow band; and
One or more amplification stages that are provided in series after the oscillation stage and amplify and emit laser light emitted from the previous stage;
A laser that is provided on the optical axis between the oscillation stage and the amplification stage or on the optical axis after the amplification stage in a state of being rotatable about the optical axis of the laser light incident on itself, and incident on itself An optical element that emits light with a polarization direction corresponding to its own rotation angle, and a multistage amplification type laser system. The multistage amplification type according to claim 1, further comprising polarization direction measuring means for extracting a part of the laser light emitted from the last amplification stage and measuring the polarization direction of the extracted laser light. Laser system. A polarization direction measuring means for extracting a part of the laser light emitted from the last amplification stage and measuring the polarization direction of the extracted laser light;
Using the measurement result of the polarization direction measuring means, and an angle adjusting means for adjusting the rotation angle of the polarizer so that the polarization direction of the laser light emitted from the last amplification stage becomes a desired direction, The multistage amplification laser system according to claim 1, further comprising: A polarization direction measuring means for extracting a part of the laser light emitted from the last amplification stage and measuring the polarization direction of the extracted laser light;
Using the measurement result of the polarization direction measuring means, an angle adjusting means for adjusting the rotation angle of the optical element so that the polarization direction of the laser light emitted from the last amplification stage becomes a desired direction; The multistage amplification laser system according to claim 2, further comprising: The polarization state measuring means for extracting a part of the laser light emitted from the final amplification stage and measuring the degree of linear polarization of the extracted laser light. Multi-stage amplification laser system. The amplification stage includes a chamber having windows for passing laser beams facing each other,
The multistage amplification laser system according to claim 1, wherein the polarizer is a CaF2 substrate provided with a polarization separation film, and is provided on an optical axis after the chamber. The amplification stage includes a chamber having windows for passing laser beams facing each other,
The multistage amplification type laser system according to claim 1, wherein the polarizer has a polarization separation film applied to a window of the chamber. The amplification stage includes a chamber having windows for passing laser beams facing each other,
The multistage amplification type laser system according to claim 1, wherein the polarizer has a polarization separating film provided on an inclined surface of a beam expander prism, and is provided on an optical axis after the chamber.

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