JP2006154622A - Pattern forming material and pattern forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pattern forming material having improved optical characteristics, and to provide a pattern forming apparatus and forming method which enable distortion of an image provided on the pattern forming material to be suppressed and a permanent pattern free from defects, such as a wiring pattern to be efficiently formed with high definition. <P>SOLUTION: The pattern forming material has a photosensitive layer on a support having a synthetic resin film containing fine particles, and exhibits a total light transmittance of ≥80% when light having a wavelength of 405 nm is illuminated, wherein a diffusion angle which is the angle between the light axis of the illuminated light and diffusive light is within 2°, and the proportion of diffusive light energy to illuminated light energy at the diffusion angle of 1.5° is within 1%. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a pattern forming material suitable for dry film resist (DFR) and the like and a pattern forming method using the pattern forming material.

  Conventionally, when forming a permanent pattern such as a wiring pattern, a pattern forming material in which a photosensitive resin composition is formed on a support by applying and drying a photosensitive resin composition has been used. As a method for forming the permanent pattern, for example, a laminate is formed by laminating the pattern forming material on a substrate such as a copper clad laminate on which the permanent pattern is formed, and the photosensitive layer in the laminate is formed on the photosensitive layer. The permanent pattern is formed by exposing to light, developing the photosensitive layer to form a pattern, and then performing an etching process or the like.

  In recent years, as the permanent pattern is highly refined, there is a strong demand for the pattern forming material that has high sensitivity and does not cause transfer defects. For the pattern forming material, in order to improve operability during production, a method is used in which particles are blended in a support on which the photosensitive layer is laminated, and fine protrusions are formed on the surface of the support. . However, the blending of the particles causes a problem that the transparency of the support is lowered and exposure light is scattered, and a high-definition pattern cannot be obtained.

  In response to this problem, a pattern forming material having excellent resolution and operability has been proposed by incorporating fine particles with a particle diameter in a certain range in the surface layer of the support (support film) (for example, patents). Reference 1). However, in this case, there is no disclosure about compatibility between the resolution and the operability of the pattern forming material by defining the relationship between the refractive index of the support and the particles to be contained.

  Therefore, a pattern forming material capable of efficiently and efficiently forming a permanent pattern such as a wiring pattern without impairing the operability of the pattern forming material, a pattern forming apparatus including the pattern forming material, and the pattern forming A pattern forming method using a material has not been provided yet, and further improvement and development are desired.

WO00 / 079344

This invention is made | formed in view of this present condition, and makes it a subject to solve the said various problems in the past, and to achieve the following objectives. That is, in the present invention, the total light transmittance at a wavelength of 405 nm is 80% or more, the diffusion angle formed by the optical axis of the light to be irradiated and the diffused light is within 2 degrees, and the diffusion angle However, the diffusion light energy (mJ / cm ² ) with respect to the irradiation light energy (mJ / cm ² ) at 1.5 ° is within 1%, and the support of the support made of a synthetic resin film containing fine particles By having at least one refractive index of the fine particles and the refractive index of the synthetic resin film in a certain numerical range, a wiring pattern having no defects without impairing operability during the production of the pattern forming material A pattern forming material capable of efficiently forming a permanent pattern with high definition and efficiency, a pattern forming apparatus provided with the pattern forming material, and a pattern forming method using the pattern forming material The purpose is to provide.

Means for solving the problems are as follows. That is,
<1> On a support that has a total light transmittance of 80% or more in the case of irradiating light, and a diffusion angle that is an angle formed by the optical axis of the irradiating light and the diffused light is within 2 degrees, A pattern forming material having a photosensitive layer made of a photosensitive resin composition.
In the pattern forming material according to <1>, the support has a total light transmittance of 80% or more, and a diffusion angle which is an angle formed by an optical axis of the light to be irradiated and diffused light is 2 degrees. Therefore, when the photosensitive layer is exposed and developed from the support side, a pattern having an excellent shape is formed.
<2> The pattern forming material according to <1>, wherein the wavelength of light to be irradiated is 405 nm.
<3> diffusion angle, diffused light energy to the irradiated light energy at 1.5 ° ^{(mJ / cm 2) (mJ} / cm 2), wherein is within 1% <1> or <2> It is a pattern formation material of description.
<4> The pattern according to any one of <1> to <3>, wherein the support is made of a polyester film containing inert particles, and the inert particles are particles having an average particle diameter of 0.01 to 2 μm. Forming material.
In the pattern forming material according to <4>, the operability and transparency of the support are compatible when the average particle diameter of the fine particles contained in the support is in a predetermined range.
<5> The pattern forming material according to any one of <1> to <4>, wherein a photosensitive layer and a protective film are laminated in this order on a support.
<6> The pattern forming material according to any one of <1> to <5>, wherein the support is biaxially stretched.
<7> The pattern formation according to any one of <1> to <6>, wherein the support is a laminate, and at least two of the plurality of compositions forming each layer in the laminate are different from each other. Material.
In the pattern forming material according to <7>, since any one of the resin composition constituting each layer of the laminate and the fine particles contained therein is different, the aspect of the laminate is appropriately selected according to the purpose. Can do.
<8> The arithmetic average roughness (Ra) of the surface on which the photosensitive layer of the support is laminated is 0.3 or less, and the arithmetic average roughness (Ra) of the surface of the support on which at least the photosensitive layer is not laminated. Is the pattern forming material according to any one of <1> to <7>, wherein 0.02 to 0.5 μm.
<9> An antistatic agent is included on at least the surface of the support on which the photosensitive layer is not laminated, and the surface resistance of the surface is 1 × 10 ¹⁸ Ω / □ in an environment where the temperature is 10 ° C. and the relative humidity is 35%. The pattern forming material according to any one of <1> to <8>, wherein:
<10> The pattern forming material according to any one of <1> to <9>, wherein the coefficient of friction of the surface of the support on which the photosensitive layer is not laminated is 0.3 to 1.0.
In the pattern forming material according to <10>, since the friction coefficient is in the above range, the handling is good in the transporting process. If the coefficient of static friction is less than 0.3, it may be slippery and winding with a roll may not be uniform. On the other hand, if the coefficient of friction exceeds 1.0, wrinkles may occur in the conveying process during coating or processing. May occur.
<11> The pattern forming material according to any one of <1> to <10>, wherein the photosensitive layer includes a polymerizable compound, and the polymerizable compound includes a monomer having at least one of a urethane group and an aryl group. is there.
<12> The photosensitive layer contains a photopolymerization initiator, and the photopolymerization initiator is a halogenated hydrocarbon derivative, hexaarylbiimidazole, oxime derivative, organic peroxide, thio compound, ketone compound, aromatic onium salt, and The pattern forming material according to any one of <1> to <11>, including at least one selected from metallocenes.
<13> The pattern forming material according to any one of <1> to <12>, wherein the photosensitive layer includes a binder, a polymerizable compound, and a photopolymerization initiator.
<14> The pattern forming material according to <13>, wherein the binder has an acidic group.
<15> The pattern forming material according to any one of <13> to <14>, wherein the binder is a vinyl copolymer.
<16> The pattern forming material according to any one of <13> to <15>, wherein the binder has an acid value of 70 to 250 (mgKOH / g).
<17> The photosensitive layer contains 30 to 90% by mass of a binder, 5 to 60% by mass of a polymerizable compound, and 0.1 to 30% by mass of a photopolymerization initiator. > The pattern forming material according to any one of the above.
<18> The pattern forming material according to any one of <1> to <17>, wherein the photosensitive layer has a thickness of 1 to 100 μm.
<19> The pattern forming material according to any one of <1> to <18>, wherein the pattern forming material has a long shape and is wound in a roll shape.
<20> The pattern forming material according to any one of <1> to <19>, wherein a protective film is formed on the photosensitive layer in the pattern forming material.
<21> The pattern forming material according to any one of <1> to <20>, wherein the pattern forming material is capable of irradiating light, and modulates light from the light irradiating means. And a light modulation means for exposing the photosensitive layer in the pattern forming apparatus.
In the pattern forming apparatus according to <21>, the light irradiation unit irradiates light toward the light modulation unit. The light modulation unit modulates light received from the light irradiation unit. The light modulated by the light modulating means is exposed to the photosensitive layer. For example, when the photosensitive layer is subsequently developed, a high-definition pattern is formed.
<22> A pattern forming method, wherein the photosensitive layer in the pattern forming material according to any one of <1> to <21> is exposed.
In the pattern forming method according to <22>, the exposure is performed on the pattern forming material. For example, when the photosensitive layer is subsequently developed, a high-definition pattern is formed.
<23> After the photosensitive layer is laminated on the substrate to be processed, the light from the light irradiation unit is modulated by the light modulation unit having n pixel parts that receive and emit light from the light irradiation unit. After that, the pattern forming method according to <22>, wherein the pattern forming method is exposed to light passing through a microlens array in which microlenses having aspherical surfaces capable of correcting aberration due to distortion of the exit surface in the pixel portion are exposed. is there.
<24> The pattern forming method according to any one of <22> to <23>, wherein the pattern forming material is laminated on the substrate while being heated and pressurized and exposed.
<25> The pattern forming method according to any one of <22> to <24>, wherein the exposure is performed imagewise based on pattern information to be formed.
<26> The pattern formation according to any one of <22> to <25>, wherein the exposure is performed using a light generated by generating a control signal based on pattern information to be formed and modulated in accordance with the control signal Is the method.
In the pattern forming method according to <26>, a control signal is generated based on pattern formation information to be formed, and light is modulated in accordance with the control signal.
<27> From <22> to <26, wherein the exposure is performed using light irradiation means for irradiating light and light modulation means for modulating light emitted from the light irradiation means based on pattern information to be formed. > The pattern forming method according to any one of the above.
<28> Exposure is performed through a microlens array in which microlenses having aspherical surfaces capable of correcting aberrations due to distortion of the exit surface of the picture element portion in the light modulator after the light is modulated by the light modulator. The pattern forming method according to any one of <22> to <27>.
In the pattern forming method according to <28>, the light modulated by the light modulation unit passes through the aspheric surface in the microlens array, so that the aberration due to the distortion of the exit surface in the pixel portion is corrected. The As a result, distortion of the image formed on the pattern forming material is suppressed, and exposure to the pattern forming material is performed with extremely high definition. For example, when the photosensitive layer is subsequently developed, an extremely fine pattern is formed.
<29> The pattern forming method according to <28>, wherein the aspherical surface is a toric surface.
In the pattern forming method according to <29>, since the aspherical surface is a toric surface, aberration due to distortion of the radiation surface in the pixel portion is efficiently corrected, and an image formed on the pattern forming material is formed. Is efficiently suppressed. As a result, the pattern forming material is exposed with extremely high definition. For example, when the photosensitive layer is subsequently developed, an extremely fine pattern is formed.
<30> The pattern forming method according to any one of <22> to <29>, wherein the exposure is performed through an aperture array.
In the pattern forming method according to <30>, the extinction ratio is improved by performing exposure through the aperture array. As a result, the exposure is performed with extremely high definition. For example, when the photosensitive layer is subsequently developed, an extremely fine pattern is formed.
<31> The pattern forming method according to any one of <22> to <30>, wherein the exposure is performed while relatively moving the exposure light and the photosensitive layer.
In the pattern forming method according to <31>, exposure is performed at high speed by performing exposure while relatively moving the modulated light and the photosensitive layer. For example, when the photosensitive layer is subsequently developed, a high-definition pattern is formed.
<32> The pattern forming method according to any one of <22> to <31>, wherein the exposure is performed on a partial region of the photosensitive layer.
<33> The pattern forming method according to any one of <22> to <32>, wherein the photosensitive layer is developed after the exposure.
In the pattern forming method according to <33>, a high-definition pattern is formed by developing the photosensitive layer after the exposure.
<34> The pattern forming method according to any one of <22> to <33>, wherein a permanent pattern is formed after development.
<35> The pattern formation method according to <34>, wherein the permanent pattern is a wiring pattern, and the formation of the permanent pattern is performed by at least one of an etching process and a plating process.

According to the present invention, the conventional problem can be solved, the total light transmittance when irradiating light with a wavelength of 405 nm is 80% or more, and the angle formed by the optical axis of the irradiating light and the diffused light is within the diffusion angle of 2 degrees is, also, the diffusion angle is diffused light energy to the irradiated light energy at 1.5 degrees ^{(mJ / cm 2) (mJ} / cm 2), located in within 1%, further By having at least a photosensitive layer on a support having a synthetic resin film containing fine particles, and at least one refractive index of the fine particles and a refractive index of the synthetic resin film are in a certain numerical range. A pattern forming material capable of forming a permanent pattern such as a wiring pattern having no defect with high definition and efficiency without impairing the operability of the pattern forming material, and the pattern formation A forming apparatus including a material and a pattern forming method using the pattern forming material can be provided.

-Pattern forming material-
The pattern forming material of the present invention comprises a support and a photosensitive layer laminated on the support, and may have other layers appropriately selected as necessary.

--Optical characteristics--
The optical characteristics are not particularly limited and may be appropriately selected depending on the purpose. The total light transmittance of the pattern forming material when irradiating light with a wavelength of 405 nm is preferably 80% or more. 85% or more is more preferable, and 87% or more is particularly preferable.
When the total light transmittance is less than 80%, the energy reaching the photosensitive layer decreases, the exposure amount becomes insufficient, the amount of light scattering in the pattern forming material increases, and the resolution decreases. May be invited.
Further, the diffusion angle that is an angle formed by the optical axis of the light to be irradiated and the diffused light is preferably within 2 degrees, more preferably 1.5 degrees or less, and particularly preferably 1 degree or less. Further, the diffused light energy to light energy at the diffusion angle 1.5 ° ^{(mJ / cm 2) (mJ} / cm 2), preferably in the within 1%, more preferably 0.5% or less.
When the diffusion angle exceeds 2 degrees, the line width is wider than a predetermined width at the time of exposure, for example, the resolution is lowered and it is difficult to obtain a high-definition pattern. Similarly, when the diffused light energy exceeds 1% with respect to the irradiation light energy, it is difficult to obtain a high-definition pattern.

The haze value (percentage of light deviating 2.5 degrees or more from the incident optical axis) when the pattern forming material is irradiated with 405 nm light is preferably 10% or less, more preferably 7% or less. It is preferably 5% or less, more preferably 3% or less, and most preferably 1% or less. Note that the diffusion angle and the haze value are somewhat different from each other, but there is no correlation between them. That is, the haze value is affected by the refractive index, and the haze value varies depending on the amount of particles contained in the pattern forming material. The diffusion angle of how the transmitted light is diffused is particularly Since it varies depending on the shape and size, it becomes a separate value.
When the haze value exceeds 10%, the amount of light scattering in the photosensitive layer increases, resolution may deteriorate, and the resist shape may be inferior.

The method for measuring the total light transmittance is not particularly limited and may be appropriately selected depending on the intended purpose. , UV-2400).
There is no restriction | limiting in particular as a measuring method of the said haze value, According to the objective, it can select suitably, For example, the method demonstrated below is mentioned.
First, (1) in the total light transmittance measurement method, the parallel light transmittance is measured in the same manner as the total light transmittance measurement method except that the integrating sphere is not used. Next, the diffuse light transmittance calculated from (2) the following calculation formula, the total light transmittance-the parallel light transmittance, is calculated, and (3) the following calculation formula, the diffuse light transmittance / the total light transmission. The haze value can be obtained from the rate × 100.

The oxygen permeability of the pattern forming material is not particularly limited and may be appropriately selected depending on the intended purpose. For example, it is 200 cc / m ² · day under conditions of a temperature of 23 ° C. and a relative humidity of 50%. · Atm or less is preferable, and 150 cc / m ² · day · atm or less is more preferable.
When the oxygen permeability exceeds 200 cc / m ² · day · atm, the preservability of the photosensitive layer is lowered, and resolution and developability may be changed.

  The method for measuring the diffusion angle and diffused light energy of the pattern forming material is not particularly limited and can be appropriately selected according to the purpose. For example, the light is applied to the pattern forming material using a light source such as a laser. Examples include a method of measuring the amount of diffused light energy at the same time as measuring the angle formed by the transmitted parallel light beam and the diffused light by receiving the irradiated and transmitted light with a sensor.

--Support body--
The support is to support each laminated photosensitive layer and the like, and is not particularly limited as long as the photosensitive layer can be peeled off, has good optical characteristics, and has good surface smoothness. It can be appropriately selected depending on the case.

---material---
The material of the support is not particularly limited as long as it has good optical characteristics and mechanical strength, and can be appropriately selected according to the purpose. For example, the support is made of a synthetic resin film, fine particles, antistatic Other components such as an agent may be included.

―――― Synthetic resin film ――――
The synthetic resin film is not particularly limited and can be appropriately selected depending on the purpose, and is preferably transparent. For example, a polyester resin film is preferable, and at least two kinds of polyester compositions are laminated. A biaxially oriented polyester film is particularly preferred.

  Examples of the polyester resin include polyethylene terephthalate, polyethylene naphthalate, poly (meth) acrylic acid ester copolymer, poly (meth) acrylic acid alkyl ester, polyethylene-2,6-naphthalate, polytetramethylene terephthalate, and polytetramethylene. And methylene-2,6-naphthalate. These may be used alone or in combination of two or more.

  Examples of the resin other than the polyester resin include polypropylene, polyethylene, cellulose triacetate, cellulose diacetate, polyvinyl chloride, polyvinyl alcohol, polycarbonate, polystyrene, cellophane, polyvinylidene chloride copolymer, polyamide, polyimide, vinyl chloride, Examples include vinyl acetate copolymer, polytetrafluoroethylene, polytrifluoroethylene, cellulose resin, and nylon resin. These may be used alone or in combination of two or more.

  The synthetic resin film may be composed of one layer or may be composed of two or more layers. In the case of two or more layers, the fine particles are preferably contained in the layer farthest from the photosensitive layer.

The synthetic resin film is preferably a biaxially oriented polyester film from the viewpoint of mechanical strength characteristics and optical characteristics.
There is no restriction | limiting in particular in the biaxial orientation method of the said biaxially-oriented polyester film, According to the objective, it can select suitably. For example, the polyester resin is melt-extruded into a sheet and rapidly cooled to form an unstretched film. When the unstretched film is biaxially stretched, the stretching temperature is 85 to 145 ° C., and the stretching ratio in the longitudinal and transverse directions is 2. It can be prepared by heat-fixing the film after biaxial stretching as necessary at a temperature of from 0.6 to 4.0 times at 150 to 210 ° C.
The biaxial stretching may be a sequential biaxial stretching method in which an unstretched film is stretched in the longitudinal direction or the transverse direction to form a uniaxially stretched film, and then the uniaxially stretched film is stretched in the transverse direction or the longitudinal direction. A simultaneous biaxial stretching method in which the unstretched film is stretched simultaneously in the machine direction and the transverse direction may be used. The biaxially stretched film can be further stretched in at least one of the longitudinal direction and the transverse direction as necessary.

The refractive index of the synthetic resin film is preferably 1.5 to 1.7, more preferably 1.55 to 1.65.
The refractive index of the synthetic resin film can be measured using a refractometer (for example, Upe manufactured by Atago Co., Ltd.) and using a sodium lamp as a light source. The refractive index can be obtained as an average refractive index n1 obtained by the following equation, where ηγ is the maximum refractive index in the film plane, ηβ is the refractive index in the perpendicular direction, and ηα is the refractive index in the thickness direction.
n1 = (ηγ + ηβ + ηα) / 3

―――― Fine particle ――――
As the fine particles to be contained in the support, the difference from the refractive index of the synthetic resin film needs to be 0.3 or less. For example, fine particles having a refractive index of 1.3 to 1.9 are preferable. A fine particle of 1.5 to 1.7 is more preferred.
The refractive index of the fine particles can be measured by a known method such as an extrapolation method, a Becke line method, or an immersion method.

The average particle size of the fine particles is preferably 0.01 to 2.0 μm, more preferably 0.01 to 1.5 μm, and particularly preferably 0.01 to 1.0 μm.
When the average particle diameter of the fine particles is less than 0.01 μm, the transportability of the pattern forming material may be deteriorated, and by adding a large amount of the fine particles in order to obtain the transportability, The haze value may increase. On the other hand, when the average particle diameter of the fine particles exceeds 2.0 μm, the resolution may be lowered due to scattering of exposure light.
The diameter of the aggregate formed by the fine particles in the synthetic resin film is preferably 5 μm or less, more preferably 2 μm, and particularly preferably 1 μm or less.

  Examples of the fine particles include crosslinked polymer particles; inorganic particles such as calcium carbonate, calcium phosphate, silica, kaolin, talc, titanium dioxide, alumina, barium sulfate, calcium fluoride, lithium fluoride, zeolite, and molybdenum sulfide; hexamethylenebis Organic particles such as behenamide, hexamethylenebisstearylamide, N, N'-distearyl terephthalamide, silicone, calcium oxalate; precipitated particles generated during polyester polymerization, etc. Among these, silica, calcium carbonate, Hexamethylene bisbehenamide is preferred.

  The precipitated particles are, for example, particles precipitated in a reaction system by polymerizing a system using an alkali metal or alkaline earth metal compound as a transesterification catalyst by a conventional method, and transesterification reaction or polycondensation reaction Sometimes it may be precipitated by adding terephthalic acid. In the transesterification or polycondensation reaction, phosphoric acid, trimethyl phosphate, triethyl phosphate, tributyl phosphate, acidic ethyl phosphate, phosphorous acid, trimethyl phosphite, triethyl phosphite, tributyl phosphite, etc. One or more of the phosphorus compounds may be present.

  As a method for incorporating the fine particles into the synthetic resin film, the synthetic resin containing the fine particles may be melted and discharged from a die to be formed into a film shape. Fine particles may be applied.

There is no restriction | limiting in particular as content of the said microparticles | fine-particles in the said support body, According to the objective, it can select suitably, For example, 30-800 ppm is preferable with respect to the said synthetic resin film, and 30-500 ppm is more preferable.
When the content is less than 30 ppm, the slidability of the support is deteriorated, and the handleability in producing the pattern forming material and the handleability of the pattern forming material itself may be reduced. When it exceeds, transparency may deteriorate and resolution may be lowered.

―――― Antistatic agent ――――
The antistatic agent is not particularly limited and may be appropriately selected from known antistatic agents. Examples thereof include compounds having two or more sulfonic acid metal bases. Examples of the compounds include Examples include lauryl diphenyl ether disulfonate, dilauryl diphenyl ether disulfonate, stearyl diphenyl ether disulfonate, distearyl diphenyl ether disulfonate, and diphenyl diphenyl ether disulfonate.

There is no restriction | limiting in particular as content of the said antistatic agent in the said support body, According to the objective, it can select suitably, For example, 1-20 mass% is preferable with respect to the said polyester resin, 5-15 mass % Is more preferable.
When the content is less than 1%, dust or the like may adhere to the support to cause pattern defects. When the content exceeds 20% by mass, the haze value is increased, blocking, or the like. As a result, the handleability in manufacturing the pattern forming material and the handleability of the pattern forming material itself may be deteriorated.

  As a method of incorporating the antistatic agent into the synthetic resin film, the synthetic resin containing the antistatic agent may be melted, discharged from a die, and molded on the film. The antistatic agent may be applied by the method described above.

The antistatic agent is preferably contained at least on the surface of the support on which the photosensitive layer is not laminated. The surface resistance of the support containing the antistatic agent is preferably 1 × 10 ¹⁸ Ω □ or less when stored for 6 hours under conditions of 10 ° C. and 35% relative humidity, and 8 × 10 8 ¹⁷ Ω □ or less is more preferable.
If the surface resistance value exceeds 1 × 10 ¹⁸ Ωcm, the generated static electricity is likely to be charged, the amount of charge is increased, dust and dust are easily adsorbed, and foreign matter failure may occur.

  There is no restriction | limiting in particular as a structure of the said support body, According to the objective, it can select suitably, For example, a single layer may be sufficient and the laminated body formed by laminating | stacking several layers may be sufficient. When the said support body is a laminated body, 2 types may mutually differ among the multiple types of compositions which form each layer in the said laminated body. For example, when the resin composition constituting each layer of the laminate is different, when the type of the fine particles contained in each layer is different, when the content of the fine particles contained in each layer is different, and whether each layer contains fine particles is different The case may be mentioned and can be appropriately selected according to the purpose. Moreover, it is preferable that the said support body is biaxially stretched from a viewpoint of a mechanical strength characteristic and an optical characteristic.

  There is no restriction | limiting in particular as thickness of the said support body, According to the objective, it can select suitably, For example, 10-50 micrometers is preferable, 10-30 micrometers is more preferable, and 10-20 micrometers is especially preferable.

  There is no restriction | limiting in particular as a shape of the said support body, According to the objective, it can select suitably, A long shape is preferable. There is no restriction | limiting in particular as the length of the said elongate support body, For example, the thing of length 10m-20000m is mentioned.

  As the surface roughness of the support, the arithmetic average roughness (Ra) of the surface on which the photosensitive layer is laminated is 0.3 or less, and the arithmetic average roughness (Ra of the surface on which the photosensitive layer is not laminated). ) Is preferably 0.02 to 0.5 μm.

  The arithmetic average roughness (Ra) on the surface of the support on which the photosensitive layer side is laminated is preferably 0.3 μm or less, and more preferably 0.2 μm or less. When the arithmetic average roughness (Ra) on the surface on which the photosensitive layer side is laminated exceeds 0.3 μm, the resist surface shape after exposure, exposure and development may be inferior.

The arithmetic average roughness (Ra) of the surface of the support on which the photosensitive layer is not laminated is preferably 0.02 to 0.5 μm, and more preferably 0.1 to 0.5 μm.
When the arithmetic average roughness (Ra) of the surface on which the photosensitive layer is not laminated is less than 0.02 μm, the transportability may be deteriorated during the production of the pattern forming material, and when it exceeds 0.5 μm, the exposure light is scattered. Depending on the resolution.

The arithmetic average roughness (Ra) is a value obtained by the following calculation formula.
In the calculation formula, Ra represents arithmetic average roughness, f (x) represents a roughness curved surface, l represents a reference length, and l = 100 mm.
The arithmetic mean roughness is a value measured using Surfcom 1400-3DF manufactured by Tokyo Seimitsu Co., Ltd. under the conditions of a measurement length of 10 cm and a cutoff of 0.08 mm according to JIS B 0601.

The heat shrinkage rate in the width direction of the support is not particularly limited and can be appropriately selected depending on the purpose. For example, when the support is stored at a temperature of 160 ± 3 ° C. for 5 minutes. It is preferably 2% or less, more preferably 1.8% or less, and particularly preferably 1.5% or less.
If the heat shrinkage rate exceeds 2%, streaky winding and winding deviation may occur in the manufacturing process of application, drying and winding finish of the photosensitive resin composition solution.

The heat shrinkage rate in the longitudinal direction of the support is not particularly limited and can be appropriately selected depending on the purpose. For example, when the support is stored at a temperature of 160 ± 3 ° C. for 5 minutes. It is preferably 3% or less, more preferably 2.5% or less, and particularly preferably 2.0% or less.
If the heat shrinkage rate exceeds 3%, streaky winding and winding deviation may occur in the manufacturing process of application, drying and winding finish of the photosensitive resin composition solution.

  The heat shrinkage rate is determined according to JIS C2318, using a test piece having a width of 20 mm and a length of 150 mm, and placing two marks at an interval of about 100 mm in the center of the test piece. (This is referred to as Amm). The test piece was stored for 5 minutes in a hot air oven at 160 ± 3 ° C. under no tension, and then allowed to stand at room temperature for 30 minutes, and then the interval between the gauge points was measured (this is Bmm). Measure by calculating the rate = 100 × (A−B) / A.

The coefficient of friction of the surface of the support on which the photosensitive layer is not laminated is preferably 0.3 to 1.0.
If the coefficient of static friction is less than 0.3, it may be slippery and winding with a roll may not be uniform. On the other hand, if the coefficient of friction exceeds 1.0, wrinkles may occur in the conveying process during coating or processing. May occur.
The method for measuring the friction coefficient is not particularly limited and may be appropriately selected depending on the purpose. For example, the gradient method using a friction resistance tester or the like, based on JIS K 7125, against SUS304, surface pressure Examples include a measurement method performed under conditions such as 0.005 MPa.

--Photosensitive layer--
The photosensitive layer is not particularly limited and can be appropriately selected from known pattern forming materials. For example, the photosensitive layer includes a binder, a polymerizable compound, and a photopolymerization initiator, and other components appropriately selected. The thing containing is preferable.
Moreover, there is no restriction | limiting in particular as the number of lamination | stacking of a photosensitive layer, According to the objective, it can select suitably, For example, one layer may be sufficient and two or more layers may be sufficient.

---binder---
For example, the binder is preferably swellable in an alkaline aqueous solution, and more preferably soluble in an alkaline aqueous solution.
As the binder exhibiting swellability or solubility with respect to the alkaline aqueous solution, for example, those having an acidic group are preferably exemplified.

There is no restriction | limiting in particular as said acidic group, According to the objective, it can select suitably, For example, a carboxyl group, a sulfonic acid group, a phosphoric acid group etc. are mentioned, Among these, a carboxyl group is preferable.
Examples of the binder having a carboxyl group include a vinyl copolymer having a carboxyl group, a polyurethane resin, a polyamic acid resin, and a modified epoxy resin. Among these, the solubility in a coating solvent, the solubility in an alkali developer, and the like. A vinyl copolymer having a carboxyl group is preferable from the viewpoint of solubility, suitability for synthesis, ease of adjustment of film properties, and the like.

  The vinyl copolymer having a carboxyl group can be obtained by copolymerization of at least (1) a vinyl monomer having a carboxyl group and (2) a monomer copolymerizable therewith.

Examples of the vinyl monomer having a carboxyl group include (meth) acrylic acid, vinyl benzoic acid, maleic acid, maleic acid monoalkyl ester, fumaric acid, itaconic acid, crotonic acid, cinnamic acid, acrylic acid dimer, and hydroxyl group. An addition reaction product of a monomer (for example, 2-hydroxyethyl (meth) acrylate) and a cyclic anhydride (for example, maleic anhydride, phthalic anhydride, cyclohexanedicarboxylic anhydride), ω-carboxy-polycaprolactone mono Examples include (meth) acrylate. Among these, (meth) acrylic acid is particularly preferable from the viewpoints of copolymerizability, cost, solubility, and the like.
Moreover, you may use the monomer which has anhydrides, such as maleic anhydride, itaconic anhydride, and citraconic anhydride, as a precursor of a carboxyl group.

  The other copolymerizable monomer is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include (meth) acrylic acid esters, crotonic acid esters, vinyl esters, maleic acid diesters. , Fumaric acid diesters, itaconic acid diesters, (meth) acrylamides, vinyl ethers, esters of vinyl alcohol, styrenes, (meth) acrylonitrile, heterocyclic groups substituted with vinyl groups (eg vinylpyridine, vinyl Pyrrolidone, vinyl carbazole, etc.), N-vinylformamide, N-vinylacetamide, N-vinylimidazole, vinylcaprolactone, 2-acrylamido-2-methylpropanesulfonic acid, mono (2-acryloyloxyethyl ester) phosphate, phosphoric acid Mono (1-methyl) 2-acryloyloxyethyl ester), functional groups (e.g., a urethane group, a urea group, a sulfonamide group, a phenol group and a vinyl monomer and the like having an imide group).

  Examples of the (meth) acrylic acid esters include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, and isobutyl (meth) ) Acrylate, t-butyl (meth) acrylate, n-hexyl (meth) acrylate, cyclohexyl (meth) acrylate, t-butylcyclohexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, t-octyl (meth) acrylate, Dodecyl (meth) acrylate, octadecyl (meth) acrylate, acetoxyethyl (meth) acrylate, phenyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-methoxyethyl (meth) acrylate 2-ethoxyethyl (meth) acrylate, 2- (2-methoxyethoxy) ethyl (meth) acrylate, 3-phenoxy-2-hydroxypropyl (meth) acrylate, benzyl (meth) acrylate, diethylene glycol monomethyl ether (meta ) Acrylate, diethylene glycol monoethyl ether (meth) acrylate, diethylene glycol monophenyl ether (meth) acrylate, triethylene glycol monomethyl ether (meth) acrylate, triethylene glycol monoethyl ether (meth) acrylate, polyethylene glycol monomethyl ether (meth) acrylate , Polyethylene glycol monoethyl ether (meth) acrylate, β-phenoxyethoxyethyl acrylate, Nylphenoxypolyethylene glycol (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, trifluoroethyl (meth) acrylate, octafluoropentyl (meth) Examples thereof include acrylate, perfluorooctylethyl (meth) acrylate, tribromophenyl (meth) acrylate, and tribromophenyloxyethyl (meth) acrylate.

  Examples of the crotonic acid esters include butyl crotonate and hexyl crotonate.

  Examples of the vinyl esters include vinyl acetate, vinyl propionate, vinyl butyrate, vinyl methoxyacetate, vinyl benzoate, and the like.

  Examples of the maleic acid diesters include dimethyl maleate, diethyl maleate, and dibutyl maleate.

  Examples of the fumaric acid diesters include dimethyl fumarate, diethyl fumarate, dibutyl fumarate and the like.

  Examples of the itaconic acid diesters include dimethyl itaconate, diethyl itaconate, and dibutyl itaconate.

  Examples of the (meth) acrylamides include (meth) acrylamide, N-methyl (meth) acrylamide, N-ethyl (meth) acrylamide, N-propyl (meth) acrylamide, N-isopropyl (meth) acrylamide, N- n-butylacryl (meth) amide, Nt-butyl (meth) acrylamide, N-cyclohexyl (meth) acrylamide, N- (2-methoxyethyl) (meth) acrylamide, N, N-dimethyl (meth) acrylamide, Examples thereof include N, N-diethyl (meth) acrylamide, N-phenyl (meth) acrylamide, N-benzyl (meth) acrylamide, (meth) acryloylmorpholine, diacetone acrylamide and the like.

  Examples of the styrenes include styrene, methyl styrene, dimethyl styrene, trimethyl styrene, ethyl styrene, isopropyl styrene, butyl styrene, hydroxy styrene, methoxy styrene, butoxy styrene, acetoxy styrene, chlorostyrene, dichlorostyrene, bromostyrene, chloro Examples include methylstyrene, hydroxystyrene protected with a group that can be deprotected by an acidic substance (for example, t-Boc and the like), methyl vinylbenzoate, α-methylstyrene, and the like.

  Examples of the vinyl ethers include methyl vinyl ether, butyl vinyl ether, hexyl vinyl ether, and methoxyethyl vinyl ether.

  Examples of the method for synthesizing a vinyl monomer having a urethane group or a urea group as the functional group include an addition reaction of an isocyanate group and a hydroxyl group or an amino group. Specifically, a monomer having an isocyanate group, and a hydroxyl group An addition reaction with a compound containing 1 or a compound having one primary or secondary amino group, an addition reaction between a monomer having a hydroxyl group or a monomer having a primary or secondary amino group, and a monoisocyanate. .

  Examples of the monomer having an isocyanate group include compounds represented by the following structural formulas (1) to (3).

However, in the above structural formula (1) ~ (3), R 1 represents a hydrogen atom or a methyl group.

  Examples of the monoisocyanate include cyclohexyl isocyanate, n-butyl isocyanate, toluyl isocyanate, benzyl isocyanate, and phenyl isocyanate.

  Examples of the monomer having a hydroxyl group include compounds represented by the following structural formulas (4) to (12).

However, in the structural formulas (4) to (12), R ¹ represents a hydrogen atom or a methyl group, and n, n1, and n2 represent an integer of 1 or more.

  Examples of the compound containing one hydroxyl group include alcohols (for example, methanol, ethanol, n-propanol, i-propanol, n-butanol, sec-butanol, t-butanol, n-hexanol, 2-ethylhexanol). , N-decanol, n-dodecanol, n-octadecanol, cyclopentanol, cyclohexanol, benzyl alcohol, phenylethyl alcohol, etc.), phenols (eg, phenol, cresol, naphthol, etc.), and further containing substituents Examples thereof include fluoroethanol, trifluoroethanol, methoxyethanol, phenoxyethanol, chlorophenol, dichlorophenol, methoxyphenol, acetoxyphenol, and the like.

  Examples of the monomer having a primary or secondary amino group include vinylbenzylamine.

  Examples of the compound containing one primary or secondary amino group include alkylamines (methylamine, ethylamine, n-propylamine, i-propylamine, n-butylamine, sec-butylamine, t-butylamine, hexyl). Amine, 2-ethylhexylamine, decylamine, dodecylamine, octadecylamine, dimethylamine, diethylamine, dibutylamine, dioctylamine), cyclic alkylamine (cyclopentylamine, cyclohexylamine, etc.), aralkylamine (benzylamine, phenethylamine, etc.), Arylamines (aniline, toluylamine, xylylamine, naphthylamine, etc.), combinations thereof (N-methyl-N-benzylamine, etc.), and amines containing substituents (trifluoroethylamino , Hexafluoro isopropyl amine, methoxyaniline, methoxypropylamine and the like) and the like.

  Examples of the other copolymerizable monomers other than those described above include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, benzyl (meth) acrylate, and (meth) acrylic. Preferable examples include 2-ethylhexyl acid, styrene, chlorostyrene, bromostyrene, and hydroxystyrene.

  The said other copolymerizable monomer may be used individually by 1 type, and may use 2 or more types together.

  The vinyl copolymer can be prepared by copolymerizing the corresponding monomers by a known method according to a conventional method. For example, it can be prepared by using a method (solution polymerization method) in which the monomer is dissolved in a suitable solvent and a radical polymerization initiator is added thereto to polymerize in a solution. Moreover, it can prepare by utilizing superposition | polymerization by what is called emulsion polymerization etc. in the state which disperse | distributed the said monomer in the aqueous medium.

  The suitable solvent used in the solution polymerization method is not particularly limited, and can be appropriately selected according to the solubility of the monomer used and the copolymer to be produced. For example, methanol, ethanol, propanol, isopropanol 1-methoxy-2-propanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, methoxypropyl acetate, ethyl lactate, ethyl acetate, acetonitrile, tetrahydrofuran, dimethylformamide, chloroform, toluene and the like. These solvents may be used alone or in combination of two or more.

  The radical polymerization initiator is not particularly limited, and examples thereof include 2,2′-azobis (isobutyronitrile) (AIBN) and 2,2′-azobis- (2,4′-dimethylvaleronitrile). Examples thereof include peroxides such as azo compounds and benzoyl peroxide, and persulfates such as potassium persulfate and ammonium persulfate.

There is no restriction | limiting in particular as content rate of the polymeric compound which has a carboxyl group in the said vinyl copolymer, According to the objective, it can select suitably, For example, 5-50 mol% is preferable, 10-40 mol% Is more preferable, and 15 to 35 mol% is particularly preferable.
If the content is less than 5 mol%, the developability to alkaline water may be insufficient, and if it exceeds 50 mol%, the developer resistance of the cured portion (image portion) may be insufficient.

There is no restriction | limiting in particular as molecular weight of the binder which has the said carboxyl group, According to the objective, it can select suitably, For example, as a mass mean molecular weight, 2,000-300,000 are preferable, 4,000-150, 000 is more preferable.
When the mass average molecular weight is less than 2,000, the strength of the film tends to be insufficient and stable production may be difficult, and when it exceeds 300,000, developability may be deteriorated.

  The binder which has the said carboxyl group may be used individually by 1 type, and may use 2 or more types together. Examples of the case where two or more binders are used in combination include, for example, a combination of two or more binders composed of different copolymer components, two or more binders having different mass average molecular weights, and two or more binders having different dispersities. Is mentioned.

  The binder having a carboxyl group may be partially or entirely neutralized with a basic substance. The binder may be used in combination with resins having different structures such as polyester resin, polyamide resin, polyurethane resin, epoxy resin, polyvinyl alcohol, gelatin and the like.

  Moreover, as the binder, a resin soluble in an alkaline aqueous solution described in Japanese Patent No. 2873889 and the like can be used.

There is no restriction | limiting in particular as content of the said binder in the said photosensitive layer, According to the objective, it can select suitably, For example, 10-90 mass% is preferable, 20-80 mass% is more preferable, 40-80 Mass% is particularly preferred.
When the content is less than 10% by mass, alkali developability and adhesion to a printed wiring board forming substrate (for example, a copper-clad laminate) may be deteriorated. Stability and strength of the cured film (tent film) may be reduced. The content may be the total content of the binder and the polymer binder used in combination as necessary.

There is no restriction | limiting in particular as an acid value of the said binder, According to the objective, it can select suitably, For example, 70-250 (mgKOH / g) is preferable, 90-200 (mgKOH / g) is more preferable, 100 -180 (mg KOH / g) is particularly preferred.
When the acid value is less than 70 (mgKOH / g), developability may be insufficient, resolution may be inferior, and permanent patterns such as wiring patterns may not be obtained with high definition. / G), at least one of the developer resistance and adhesion of the pattern deteriorates, and a permanent pattern such as a wiring pattern may not be obtained with high definition.

――― Polymerizable compound ―――
There is no restriction | limiting in particular as said polymeric compound, According to the objective, it can select suitably, For example, the monomer or oligomer which has at least any one of a urethane group and an aryl group is mentioned suitably. Moreover, it is preferable that these have 2 or more types of polymeric groups.

  Examples of the polymerizable group include an ethylenically unsaturated bond (for example, (meth) acryloyl group, (meth) acrylamide group, styryl group, vinyl group such as vinyl ester and vinyl ether, allyl group such as allyl ether and allyl ester). Etc.) and a polymerizable cyclic ether group (for example, epoxy group, oxetane group, etc.) and the like. Among these, an ethylenically unsaturated bond is preferable.

―――― Monomer having urethane group ――――
The monomer having a urethane group is not particularly limited as long as it has a urethane group, and can be appropriately selected according to the purpose. For example, JP-B-48-41708, JP-A-51-37193, Examples include compounds described in JP-B-5-50737, JP-B-7-7208, JP-A-2001-154346, JP-A-2001-356476, and the like. Examples include adducts of the above polyisocyanate compounds having an isocyanate group and a vinyl monomer having a hydroxyl group in the molecule.

  Examples of the polyisocyanate compound having two or more isocyanate groups in the molecule include hexamethylene diisocyanate, trimethylhexamethylene diisocyanate, isophorone diisocyanate, xylene diisocyanate, toluene diisocyanate, phenylene diisocyanate, norbornene diisocyanate, diphenyl diisocyanate, diphenylmethane diisocyanate, A diisocyanate such as 3,3′dimethyl-4,4′-diphenyl diisocyanate; a polyaddition product of the diisocyanate with a bifunctional alcohol (in this case, both ends are isocyanate groups); a burette or isocyanurate of the diisocyanate; Trimer; the diisocyanate or diisocyanates and trimethylolpropane, pe Taerisurutoru, polyfunctional alcohols such as glycerin, or the like adducts of other functional alcohol obtained of such these ethylene oxide adducts and the like.

  Examples of the vinyl monomer having a hydroxyl group in the molecule include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, diethylene glycol mono (meth) acrylate, and triethylene. Glycol mono (meth) acrylate, tetraethylene glycol mono (meth) acrylate, octaethylene glycol mono (meth) acrylate, polyethylene glycol mono (meth) acrylate, dipropylene glycol mono (meth) acrylate, tripropylene glycol mono (meth) acrylate , Tetrapropylene glycol mono (meth) acrylate, octapropylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) Chryrate, dibutylene glycol mono (meth) acrylate, tributylene glycol mono (meth) acrylate, tetrabutylene glycol mono (meth) acrylate, octabutylene glycol mono (meth) acrylate, polybutylene glycol mono (meth) acrylate, trimethylolpropane Examples include di (meth) acrylate and pentaerythritol tri (meth) acrylate. Moreover, the one terminal (meth) acrylate body of the diol body which has different alkylene oxide parts, such as a copolymer (random, a block, etc.) of ethylene oxide and propylene oxide, etc. are mentioned.

  In addition, examples of the monomer having a urethane group include compounds having an isocyanurate ring such as tri ((meth) acryloyloxyethyl) isocyanurate, di (meth) acrylated isocyanurate, and tri (meth) acrylate of ethylene oxide-modified isocyanuric acid. Is mentioned. Among these, the compound represented by the following structural formula (13) or the structural formula (14) is preferable, and it is particularly preferable that at least the compound represented by the structural formula (14) is included from the viewpoint of tent properties. Moreover, these compounds may be used individually by 1 type, and may use 2 or more types together.

In the structural formulas (13) and (14), R ^{1 to} R ³ each represent a hydrogen atom or a methyl group. X ₁ to X ₃ represents an alkylene oxide, may be alone or in combination of two or more thereof.

  Examples of the alkylene oxide group include an ethylene oxide group, a propylene oxide group, a butylene oxide group, a pentylene oxide group, a hexylene oxide group, and a group in which these are combined (may be combined in any of random or block). Among these, an ethylene oxide group, a propylene oxide group, a butylene oxide group, or a combination thereof is preferable, and an ethylene oxide group and a propylene oxide group are more preferable.

  In the structural formulas (13) and (14), m1 to m3 represent an integer of 1 to 60, preferably 2 to 30, and more preferably 4 to 15.

In the structural formulas (13) and (14), Y ¹ and Y ² represent a divalent organic group having 2 to 30 carbon atoms, for example, an alkylene group, an arylene group, an alkenylene group, an alkynylene group, a carbonyl group. (—CO—), an oxygen atom (—O—), a sulfur atom (—S—), an imino group (—NH—), a substituted imino group in which the hydrogen atom of the imino group is substituted with a monovalent hydrocarbon group, Preferred examples include a sulfonyl group (—SO ₂ —) or a combination thereof, and among these, an alkylene group, an arylene group, or a combination thereof is preferable.

  The alkylene group may have a branched structure or a cyclic structure, for example, methylene group, ethylene group, propylene group, isopropylene group, butylene group, isobutylene group, pentylene group, neopentylene group, hexylene group, trimethyl hexene. Preferable examples include a xylene group, a cyclohexylene group, a heptylene group, an octylene group, a 2-ethylhexylene group, a nonylene group, a decylene group, a dodecylene group, an octadecylene group, or any of the following groups.

  The arylene group may be substituted with a hydrocarbon group, and examples thereof include a phenylene group, a tolylene group, a diphenylene group, a naphthylene group, and the groups shown below.

  Examples of the group in which these are combined include a xylylene group.

  The alkylene group, arylene group, or a combination thereof may further have a substituent. Examples of the substituent include a halogen atom (for example, fluorine atom, chlorine atom, bromine atom, iodine). Atom), aryl group, alkoxy group (for example, methoxy group, ethoxy group, 2-ethoxyethoxy group), aryloxy group (for example, phenoxy group), acyl group (for example, acetyl group, propionyl group), acyloxy group (for example, , Acetoxy group, butyryloxy group), alkoxycarbonyl group (for example, methoxycarbonyl group, ethoxycarbonyl group), aryloxycarbonyl group (for example, phenoxycarbonyl group) and the like.

  In the structural formulas (13) and (14), n represents an integer of 3 to 6, and 3, 4 or 6 is preferable from the viewpoint of feedability of raw materials for synthesizing a polymerizable monomer.

  In the structural formulas (13) and (14), Z represents an n-valent (trivalent to hexavalent) linking group, and examples thereof include any of the groups shown below.

However, _{X 4} represents an alkylene oxide. m4 represents an integer of 1 to 20. n represents an integer of 3 to 6. A represents an n-valent (trivalent to hexavalent) organic group.

  Examples of A include an n-valent aliphatic group, an n-valent aromatic group, and an alkylene group, an arylene group, an alkenylene group, an alkynylene group, a carbonyl group, an oxygen atom, a sulfur atom, an imino group, and an imino group. Are preferably a combination of a substituted imino group in which the hydrogen atom is substituted with a monovalent hydrocarbon group or a sulfonyl group, an n-valent aliphatic group, an n-valent aromatic group, or an alkylene group or arylene A group in which a group and an oxygen atom are combined is more preferable, and an n-valent aliphatic group, and a group in which an n-valent aliphatic group is combined with an alkylene group and an oxygen atom are particularly preferable.

  The number of carbon atoms of A is, for example, preferably an integer of 1 to 100, more preferably an integer of 1 to 50, and particularly preferably an integer of 3 to 30.

The n-valent aliphatic group may have a branched structure or a cyclic structure.
As a carbon atom number of the said aliphatic group, the integer of 1-30 is preferable, for example, the integer of 1-20 is more preferable, and the integer of 3-10 is especially preferable.
The number of carbon atoms of the aromatic group is preferably an integer of 6 to 100, more preferably an integer of 6 to 50, and particularly preferably an integer of 6 to 30.

  The n-valent aliphatic group or aromatic group may further have a substituent. Examples of the substituent include a hydroxyl group, a halogen atom (for example, a fluorine atom, a chlorine atom, a bromine atom, Iodine atom), aryl group, alkoxy group (for example, methoxy group, ethoxy group, 2-ethoxyethoxy group), aryloxy group (for example, phenoxy group), acyl group (for example, acetyl group, propionyl group), acyloxy group ( Examples thereof include an acetoxy group, a butyryloxy group), an alkoxycarbonyl group (for example, a methoxycarbonyl group, an ethoxycarbonyl group), an aryloxycarbonyl group (for example, a phenoxycarbonyl group), and the like.

The alkylene group may have a branched structure or a cyclic structure.
As a carbon atom number of the said alkylene group, the integer of 1-18 is preferable, for example, and the integer of 1-10 is more preferable.

The arylene group may be further substituted with a hydrocarbon group.
As the number of carbon atoms of the arylene group, an integer of 6 to 18 is preferable, and an integer of 6 to 10 is more preferable.

  As a carbon atom number of the monovalent hydrocarbon group of the said substituted imino group, the integer of 1-18 is preferable and the integer of 1-10 is more preferable.

  Below, the preferable example of said A is as follows.

  Examples of the compounds represented by the structural formulas (13) and (14) include compounds represented by the following structural formulas (15) to (37).

  However, in said structural formula (15)-(37), n, n1, n2 and m mean 1-60, l means 1-20, R represents a hydrogen atom or a methyl group. .

-Monomer having an aryl group-
The monomer having an aryl group is not particularly limited as long as it has an aryl group, and can be appropriately selected according to the purpose. For example, a polyhydric alcohol compound having a aryl group, a polyvalent amine compound, and a polyvalent amino Examples thereof include esters or amides of at least one of alcohol compounds and an unsaturated carboxylic acid.

  Examples of the polyhydric alcohol compound, polyamine compound or polyhydric amino alcohol compound having an aryl group include polystyrene oxide, xylylene diol, di- (β-hydroxyethoxy) benzene, 1,5-dihydroxy-1, 2,3,4-tetrahydronaphthalene, 2,2-diphenyl-1,3-propanediol, hydroxybenzyl alcohol, hydroxyethyl resorcinol, 1-phenyl-1,2-ethanediol, 2,3,5,6-tetra Methyl-p-xylene-α, α′-diol, 1,1,4,4-tetraphenyl-1,4-butanediol, 1,1,4,4-tetraphenyl-2-butyne-1,4- Diol, 1,1′-bi-2-naphthol, dihydroxynaphthalene, 1,1′-methylene-di-2-naphth 1,2,4-benzenetriol, biphenol, 2,2′-bis (4-hydroxyphenyl) butane, 1,1-bis (4-hydroxyphenyl) cyclohexane, bis (hydroxyphenyl) methane, catechol, 4-chlororesorcinol, hydroquinone, hydroxybenzyl alcohol, methyl hydroquinone, methylene-2,4,6-trihydroxybenzoate, phloroglicinol, pyrogallol, resorcinol, α- (1-aminoethyl) -p-hydroxybenzyl alcohol, α -(1-aminoethyl) -p-hydroxybenzyl alcohol, 3-amino-4-hydroxyphenylsulfone and the like can be mentioned. In addition, compounds obtained by adding α, β-unsaturated carboxylic acid to glycidyl compounds such as xylylene bis (meth) acrylamide, novolac epoxy resin and bisphenol A diglycidyl ether, phthalic acid, trimellitic acid, etc. Esterified products obtained from vinyl monomers containing hydroxyl groups in the molecule, diallyl phthalate, triallyl trimellitic acid, diallyl benzenedisulfonate, cationically polymerizable divinyl ethers (for example, bisphenol A divinyl ether), epoxy as a polymerizable monomer Compound (for example, novolac type epoxy resin, bisphenol A diglycidyl ether, etc.), vinyl ester (for example, divinyl phthalate, divinyl terephthalate, divinylbenzene-1,3-disulfonate, etc.), styrene Compounds such as divinylbenzene, p-allylstyrene, p-isopropenestyrene, and the like. Among these, the compound represented by the following structural formula (38) is preferable.

In the structural formula (38), R ⁴ and R ⁵ represent a hydrogen atom or an alkyl group.

In the structural formula (38), X ₅ and X ₆ represent an alkylene oxide group, which may be used alone or in combination of two or more. As the alkylene oxide group, for example, an ethylene oxide group, a propylene oxide group, a butylene oxide group, a pentylene oxide group, a hexylene oxide group, a group combining these (which may be combined in any of random and block), Among these, an ethylene oxide group, a propylene oxide group, a butylene oxide group, or a group combining these is preferable, and an ethylene oxide group and a propylene oxide group are more preferable.

  In the structural formula (38), m5 and m6 are preferably an integer of 1 to 60, more preferably an integer of 2 to 30, and particularly preferably an integer of 4 to 15.

In the structural formula (38), T represents a divalent linking group, and examples thereof include methylene, ethylene, MeCMe, CF ₃ CCF ₃ , CO, and SO ₂ .

In the structural formula (38), Ar ¹ and Ar ² represent an aryl group which may have a substituent, and examples thereof include phenylene and naphthylene. Examples of the substituent include an alkyl group, an aryl group, an aralkyl group, a halogen group, an alkoxy group, or a combination thereof.

  Specific examples of the monomer having an aryl group include 2,2-bis [4- (3- (meth) acryloxy-2-hydroxypropoxy) phenyl] propane, 2,2-bis [4-((meth)). (Acryloxyethoxy) phenyl] propane, 2,2-bis (4-((meth) acryloyloxypolyethoxy) phenyl) propane having 2 to 20 ethoxy groups substituted with one phenolic OH group (For example, 2,2-bis (4-((meth) acryloyloxydiethoxy) phenyl) propane, 2,2-bis (4-((meth) acryloyloxytetraethoxy) phenyl) propane, 2,2-bis (4-((Meth) acryloyloxypentaethoxy) phenyl) propane, 2,2-bis (4-((meth) acryloyloxydecae) Xyl) phenyl) propane, 2,2-bis (4-((meth) acryloyloxypentadecaethoxy) phenyl) propane), 2,2-bis [4-((meth) acryloxypropoxy) phenyl] propane, 2,2-bis (4-((meth) acryloyloxypolypropoxy) phenyl) propane (e.g. 2,2-bis (2) having 2 to 20 ethoxy groups substituted with one phenolic OH group 4-((meth) acryloyloxydipropoxy) phenyl) propane, 2,2-bis (4-((meth) acryloyloxytetrapropoxy) phenyl) propane, 2,2-bis (4-((meth) acryloyloxy) Pentapropoxy) phenyl) propane, 2,2-bis (4-((meth) acryloyloxydecapropoxy) pheny ) Propane, 2,2-bis (4-((meth) acryloyloxypentadecapropoxy) phenyl) propane, or the like, or both the polyethylene oxide skeleton and the polypropylene oxide skeleton in the same molecule as the polyether moiety Compounds (for example, compounds described in WO01 / 98832 etc., or commercially available, Shin-Nakamura Chemical Co., Ltd., BPE-200, BPE-500, BPE-1000), bisphenol skeleton and urethane group Examples thereof include a polymerizable compound. These compounds may be compounds obtained by changing the part derived from the bisphenol A skeleton to bisphenol F or bisphenol S.

  Examples of the polymerizable compound having a bisphenol skeleton and a urethane group include an isocyanate group and a polymerizable group in a compound having a hydroxyl group at the terminal obtained as an adduct such as bisphenol and ethylene oxide or propylene oxide, or a polyaddition product. Examples thereof include compounds (for example, 2-isocyanatoethyl (meth) acrylate, α, α-dimethyl-vinylbenzyl isocyanate, etc.).

-Other polymerizable monomers-
In the pattern forming method of the present invention, a polymerizable monomer other than the monomer containing the urethane group and the monomer having an aryl group may be used in combination as long as the characteristics as the pattern forming material are not deteriorated.

  Examples of the polymerizable monomer other than the monomer containing a urethane group and the monomer containing an aromatic ring include unsaturated carboxylic acids (for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) And an ester of an aliphatic polyhydric alcohol compound and an amide of an unsaturated carboxylic acid and a polyvalent amine compound.

  Examples of the monomer of the ester of the unsaturated carboxylic acid and the aliphatic polyhydric alcohol compound include (meth) acrylic acid ester, ethylene glycol di (meth) acrylate, and polyethylene glycol having 2 to 18 ethylene groups. Di (meth) acrylate (for example, diethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, nonaethylene glycol di (meth) acrylate, dodecaethylene glycol di (meth) acrylate , Tetradecaethylene glycol di (meth) acrylate, etc.), propylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate having 2 to 18 propylene groups (for example, , Dipropylene glycol di (meth) acrylate, tripropylene glycol di (meth) acrylate, tetrapropylene glycol di (meth) acrylate, dodecapropylene glycol di (meth) acrylate, etc.), neopentyl glycol di (meth) acrylate, ethylene oxide modified Neopentyl glycol di (meth) acrylate, propylene oxide modified neopentyl glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, trimethylolpropane di (meth) acrylate, trimethylolpropane tri ((meth) acryloyloxypropyl) ) Ether, trimethylolethane tri (meth) acrylate, 1,3-propanediol di (meth) acrylate, 1,3-butanediol (Meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, tetramethylene glycol di (meth) acrylate, 1,4-cyclohexanediol di (meth) acrylate, 1,2,4-butanetriol tri (meth) acrylate, 1,5-bentanediol (meth) acrylate, pentaerythritol di (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, di Pentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, sorbitol tri (meth) acrylate, sorbitol tetra (meth) acrylate, sorbitol penta (meth) acrylate Rate, sorbitol hexa (meth) acrylate, dimethylol dicyclopentane di (meth) acrylate, tricyclodecane di (meth) acrylate, neopentyl glycol di (meth) acrylate, neopentyl glycol modified trimethylolpropane di (meth) acrylate A di (meth) acrylate of an alkylene glycol chain having at least one ethylene glycol chain / propylene glycol chain (for example, a compound described in WO01 / 98832), at least one of ethylene oxide and propylene oxide Trimethylolpropane tri (meth) acrylate, polybutylene glycol di (meth) acrylate, glycerol di (meth) acrylate, glycerol tri (meth) acrylate Examples include relate and xylenol di (meth) acrylate.

  Among the (meth) acrylic acid esters, ethylene glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, polypropylene glycol di (meta) from the viewpoint of easy availability. ) Acrylate, di (meth) acrylate of alkylene glycol chain each having at least one ethylene glycol chain / propylene glycol chain, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, pentaerythritol triacrylate, penta Erythritol di (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, glycerin tri (Meth) acrylate, diglycerin di (meth) acrylate, 1,3-propanediol di (meth) acrylate, 1,2,4-butanetriol tri (meth) acrylate, 1,4-cyclohexanediol di (meth) acrylate, 1, Preference is given to 5-pentanediol (meth) acrylate, neopentyl glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate added with ethylene oxide, and the like.

  Examples of the ester (itaconic acid ester) of the itaconic acid and the aliphatic polyhydric alcohol compound include ethylene glycol diitaconate, propylene glycol diitaconate, 1,3-butanediol diitaconate, 1,4- Examples include butanediol diitaconate, tetramethylene glycol diitaconate, pentaerythritol diitaconate, and sorbitol tetritaconate.

  Examples of the ester (crotonic acid ester) of the crotonic acid and the aliphatic polyhydric alcohol compound include ethylene glycol dicrotonate, tetramethylene glycol dicrotonate, pentaerythritol dicrotonate, and sorbitol tetradicrotonate. Can be mentioned.

  Examples of the ester (isocrotonic acid ester) of the isocrotonic acid and the aliphatic polyhydric alcohol compound include ethylene glycol diisocrotonate, pentaerythritol diisocrotonate, and sorbitol tetraisocrotonate.

  Examples of the ester of maleic acid and the aliphatic polyhydric alcohol compound (maleic acid ester) include ethylene glycol dimaleate, triethylene glycol dimaleate, pentaerythritol dimaleate, and sorbitol tetramaleate.

  Examples of the amide derived from the polyvalent amine compound and the unsaturated carboxylic acid include methylene bis (meth) acrylamide, ethylene bis (meth) acrylamide, 1,6-hexamethylene bis (meth) acrylamide, and octamethylene bis ( And (meth) acrylamide, diethylenetriamine tris (meth) acrylamide, and diethylenetriamine bis (meth) acrylamide.

  In addition to the above, as the polymerizable monomer, for example, butanediol-1,4-diglycidyl ether, cyclohexanedimethanol glycidyl ether, ethylene glycol diglycidyl ether, diethylene glycol diglycidyl ether, dipropylene glycol diglycidyl ether, Compounds obtained by adding an α, β-unsaturated carboxylic acid to a glycidyl group-containing compound such as hexanediol diglycidyl ether, trimethylolpropane triglycidyl ether, pentaerythritol tetraglycidyl ether, glycerin triglycidyl ether, Polyester acrylate and polyester (Metal) as described in JP-B-64183, JP-B-49-43191, and JP-B-52-30490 ) Acrylate oligomers, epoxy compounds (for example, butanediol-1,4-diglycidyl ether, cyclohexanedimethanol glycidyl ether, diethylene glycol diglycidyl ether, dipropylene glycol diglycidyl ether, hexanediol diglycidyl ether, trimethylolpropane triglycidyl Ether, pentaerythritol tetraglycidyl ether, glycerin triglycidyl ether, etc.) and (meth) acrylic acid and other polyfunctional acrylates and methacrylates such as epoxy acrylates, Japan Adhesion Association Vol. 20, No. 7, 300- 308 pages (1984), photocurable monomers and oligomers, allyl esters (eg, diallyl phthalate, diallyl adipate, Diallyl ronate, diallylamide (for example, diallylacetamide), cationically polymerizable divinyl ethers (for example, butanediol-1,4-divinyl ether, cyclohexane dimethanol divinyl ether, ethylene glycol divinyl ether, diethylene glycol divinyl ether, di Propylene glycol divinyl ether, hexanediol divinyl ether, trimethylolpropane trivinyl ether, pentaerythritol tetravinyl ether, glycerin trivinyl ether, etc.), epoxy compounds (eg, butanediol-1,4-diglycidyl ether, cyclohexanedimethanol glycidyl ether, ethylene) Glycol diglycidyl ether, diethylene glycol diglycidyl ether, dipro Pyrene glycol diglycidyl ether, hexanediol diglycidyl ether, trimethylolpropane triglycidyl ether, pentaerythritol tetraglycidyl ether, glycerin triglycidyl ether, etc.), oxetanes (for example, 1,4-bis [(3-ethyl-3-oxetanyl) Methoxy) methyl] benzene, etc.), epoxy compounds, oxetanes (for example, compounds described in WO01 / 22165), N-β-hydroxyethyl-β- (methacrylamide) ethyl acrylate, N, N-bis (β -Methacryloxyethyl) A compound having two or more different ethylenically unsaturated double bonds such as acrylamide and allyl methacrylate.

  Examples of the vinyl esters include divinyl succinate and divinyl adipate.

  These polyfunctional monomers or oligomers may be used alone or in combination of two or more.

If necessary, the polymerizable monomer may be used in combination with a polymerizable compound (monofunctional monomer) containing one polymerizable group in the molecule.
Examples of the monofunctional monomer include the compounds exemplified as the raw material of the binder, and the dibasic mono ((meth) acryloyloxyalkyl ester) mono (halohydroxyalkyl ester) described in JP-A-6-236031. Monofunctional monomers such as γ-chloro-β-hydroxypropyl-β′-methacryloyloxyethyl-o-phthalate, etc., compounds described in Japanese Patent No. 2744443, WO00 / 52529, Japanese Patent No. 2548016, etc. Is mentioned.

As content of the polymeric compound in the said photosensitive layer, 5-90 mass% is preferable, for example, 15-60 mass% is more preferable, and 20-50 mass% is especially preferable.
If the content is 5% by mass, the strength of the tent film may be reduced, and if it exceeds 90% by mass, edge fusion during storage (exudation failure from the end of the roll) may be deteriorated. .
Moreover, as content of the polyfunctional monomer which has 2 or more of the said polymeric groups in a polymeric compound, 5-100 mass% is preferable, 20-100 mass% is more preferable, 40-100 mass% is especially preferable. .

-Photopolymerization initiator-
The photopolymerization initiator is not particularly limited as long as it has the ability to initiate polymerization of the polymerizable compound, and can be appropriately selected from known photopolymerization initiators, for example, visible from the ultraviolet region. Those having photosensitivity to light are preferable, and may be an activator that generates an active radical by causing some action with a photoexcited sensitizer, and initiates cationic polymerization according to the type of monomer. It may be an initiator.
The photopolymerization initiator preferably contains at least one component having a molecular extinction coefficient of at least about 50 within a range of about 300 to 800 nm (more preferably 330 to 500 nm).

  Examples of the photopolymerization initiator include halogenated hydrocarbon derivatives (for example, those having a triazine skeleton, those having an oxadiazole skeleton), hexaarylbiimidazoles, oxime derivatives, organic peroxides, thio compounds, Examples include ketone compounds, aromatic onium salts, and metallocenes. Among these, halogenated hydrocarbons having a triazine skeleton, oxime derivatives, ketone compounds, hexaarylbiimidazole series from the viewpoints of sensitivity and storage stability of the photosensitive layer and adhesion between the photosensitive layer and the printed wiring board forming substrate. Compounds are preferred.

  Examples of the hexaarylbiimidazole include 2,2′-bis (2-chlorophenyl) -4,4 ′, 5,5′-tetraphenylbiimidazole, 2,2′-bis (o-fluorophenyl)- 4,4 ', 5,5'-tetraphenylbiimidazole, 2,2'-bis (2-bromophenyl) -4,4', 5,5'-tetraphenylbiimidazole, 2,2'-bis ( 2,4-dichlorophenyl) -4,4 ', 5,5'-tetraphenylbiimidazole, 2,2'-bis (2-chlorophenyl) -4,4', 5,5'-tetra (3-methoxyphenyl) ) Biimidazole, 2,2'-bis (2-chlorophenyl) -4,4 ', 5,5'-tetra (4-methoxyphenyl) biimidazole, 2,2'-bis (4-methoxyphenyl) -4 , 4 ', , 5'-tetraphenylbiimidazole, 2,2'-bis (2,4-dichlorophenyl) -4,4 ', 5,5'-tetraphenylbiimidazole, 2,2'-bis (2-nitrophenyl) -4,4 ', 5,5'-tetraphenylbiimidazole, 2,2'-bis (2-methylphenyl) -4,4', 5,5'-tetraphenylbiimidazole, 2,2'-bis (2-Trifluoromethylphenyl) -4,4 ', 5,5'-tetraphenylbiimidazole, compounds described in WO00 / 52529, and the like.

  The biimidazoles are described in, for example, Bull. Chem. Soc. Japan, 33, 565 (1960) and J. Am. Org. It can be easily synthesized by the method disclosed in Chem, 36 (16) 2262 (1971).

  Examples of the halogenated hydrocarbon compound having a triazine skeleton include those described in Wakabayashi et al., Bull. Chem. Soc. Japan, 42, 2924 (1969), a compound described in British Patent 1388492, a compound described in JP-A-53-133428, a compound described in German Patent 3337024, F.I. C. J. Schaefer et al. Org. Chem. 29, 1527 (1964), compounds described in JP-A-62-258241, compounds described in JP-A-5-281728, compounds described in JP-A-5-34920, US Pat. No. 4,221,976 And compounds described in the book.

  Wakabayashi et al., Bull. Chem. Soc. As a compound described in Japan, 42, 2924 (1969), for example, 2-phenyl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-chlorophenyl) -4,6 -Bis (trichloromethyl) -1,3,5-triazine, 2- (4-tolyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxyphenyl)- 4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (2,4-dichlorophenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2, 4,6-tris (trichloromethyl) -1,3,5-triazine, 2-methyl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2-n-nonyl-4,6- Bis (trichloromethyl) 1,3,5-triazine and 2- (α, α, β- trichloroethyl) -4,6-bis (trichloromethyl) -1,3,5-triazine.

  Examples of the compound described in the British Patent 1388492 include 2-styryl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methylstyryl) -4,6- Bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxystyryl)- 4-amino-6-trichloromethyl-1,3,5-triazine and the like can be mentioned.

  Examples of the compounds described in JP-A-53-133428 include 2- (4-methoxy-naphth-1-yl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2 -(4-Ethoxy-naphth-1-yl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- [4- (2-ethoxyethyl) -naphth-1-yl]- 4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4,7-dimethoxy-naphth-1-yl) -4,6-bis (trichloromethyl) -1,3,5- Examples include triazine and 2- (acenaphtho-5-yl) -4,6-bis (trichloromethyl) -1,3,5-triazine.

  Examples of the compound described in the specification of German Patent 3333724 include 2- (4-styrylphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4- (4 -Methoxystyryl) phenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (1-naphthylvinylenephenyl) -4,6-bis (trichloromethyl) -1,3,5 -Triazine, 2-chlorostyrylphenyl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-thiophen-2-vinylenephenyl) -4,6-bis (trichloromethyl)- 1,3,5-triazine, 2- (4-thiophene-3-vinylenephenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-furan-2 Vinylenephenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine and 2- (4-benzofuran-2-vinylenephenyl) -4,6-bis (trichloromethyl) -1,3,5 -Triazine etc. are mentioned.

  F. above. C. J. Schaefer et al. Org. Chem. 29, 1527 (1964) include, for example, 2-methyl-4,6-bis (tribromomethyl) -1,3,5-triazine, 2,4,6-tris (tribromomethyl); -1,3,5-triazine, 2,4,6-tris (dibromomethyl) -1,3,5-triazine, 2-amino-4-methyl-6-tri (bromomethyl) -1,3,5- Examples include triazine and 2-methoxy-4-methyl-6-trichloromethyl-1,3,5-triazine.

  Examples of the compounds described in JP-A-62-258241 include 2- (4-phenylethynylphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4- Naphthyl-1-ethynylphenyl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4- (4-tolylethynyl) phenyl) -4,6-bis (trichloromethyl) -1 , 3,5-triazine, 2- (4- (4-methoxyphenyl) ethynylphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4- (4-isopropylphenyl) Ethynyl) phenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4- (4-ethylphenylethynyl) phenyl) -4,6-bis (trichloromethyl) Le) -1,3,5-triazine.

  Examples of the compound described in JP-A-5-281728 include 2- (4-trifluoromethylphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (2, 6-difluorophenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (2,6-dichlorophenyl) -4,6-bis (trichloromethyl) -1,3,5- Examples include triazine, 2- (2,6-dibromophenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine.

  Examples of the compound described in JP-A-5-34920 include 2,4-bis (trichloromethyl) -6- [4- (N, N-diethoxycarbonylmethylamino) -3-bromophenyl] -1, 3,5-triazine, trihalomethyl-s-triazine compounds described in US Pat. No. 4,239,850, 2,4,6-tris (trichloromethyl) -s-triazine, 2- (4-chlorophenyl) Examples include -4,6-bis (tribromomethyl) -s-triazine.

  Examples of the compound described in US Pat. No. 4,221,976 include compounds having an oxadiazole skeleton (for example, 2-trichloromethyl-5-phenyl-1,3,4-oxadiazole, 2- Trichloromethyl-5- (4-chlorophenyl) -1,3,4-oxadiazole, 2-trichloromethyl-5- (1-naphthyl) -1,3,4-oxadiazole, 2-trichloromethyl-5 -(2-naphthyl) -1,3,4-oxadiazole, 2-tribromomethyl-5-phenyl-1,3,4-oxadiazole, 2-tribromomethyl-5- (2-naphthyl) -1,3,4-oxadiazole; 2-trichloromethyl-5-styryl-1,3,4-oxadiazole, 2-trichloromethyl-5- (4-chlorostyryl) -1,3,4-oxadiazole, 2-trichloromethyl-5- (4-methoxystyryl) -1,3,4-oxadiazole, 2-trichloromethyl-5- (1-naphthyl) -1, 3,4-oxadiazole, 2-trichloromethyl-5- (4-n-butoxystyryl) -1,3,4-oxadiazole, 2-tripromemethyl-5-styryl-1,3,4 Oxadiazole and the like).

  Examples of the oxime derivative suitably used in the present invention include compounds represented by the following structural formulas (39) to (72).

  Examples of the ketone compound include benzophenone, 2-methylbenzophenone, 3-methylbenzophenone, 4-methylbenzophenone, 4-methoxybenzophenone, 2-chlorobenzophenone, 4-chlorobenzophenone, 4-bromobenzophenone, 2-carboxybenzophenone, 2-ethoxycarbonylbenzolphenone, benzophenonetetracarboxylic acid or tetramethyl ester thereof, 4,4′-bis (dialkylamino) benzophenone (for example, 4,4′-bis (dimethylamino) benzophenone, 4,4′- Bisdicyclohexylamino) benzophenone, 4,4′-bis (diethylamino) benzophenone, 4,4′-bis (dihydroxyethylamino) benzophenone, 4-methoxy-4′-dimethylamino Nzophenone, 4,4'-dimethoxybenzophenone, 4-dimethylaminobenzophenone, 4-dimethylaminoacetophenone, benzyl, anthraquinone, 2-t-butylanthraquinone, 2-methylanthraquinone, phenanthraquinone, xanthone, thioxanthone, 2-chloro -Thioxanthone, 2,4-diethylthioxanthone, fluorenone, 2-benzyl-dimethylamino-1- (4-morpholinophenyl) -1-butanone, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholino -1-propanone, 2-hydroxy-2-methyl- [4- (1-methylvinyl) phenyl] propanol oligomer, benzoin, benzoin ethers (for example, benzoin methyl ether, benzoin ethyl ether, In propyl ether, benzoin isopropyl ether, benzoin phenyl ether, benzyl dimethyl ketal), acridone, chloro acridone, N- methyl acridone, N- butyl acridone, N- butyl - such as chloro acrylic pyrrolidone.

  Examples of the metallocenes include bis (η5-2,4-cyclopentadien-1-yl) -bis (2,6-difluoro-3- (1H-pyrrol-1-yl) -phenyl) titanium, η5- Cyclopentadienyl-η6-cumenyl-iron (1 +)-hexafluorophosphate (1-), JP-A-53-133428, JP-B-57-1819, JP-A-57-6096 and US Pat. No. 3,615,455 And the compounds described in the specification.

  Further, as photopolymerization initiators other than the above, acridine derivatives (for example, 9-phenylacridine, 1,7-bis (9,9′-acridinyl) heptane, etc.), N-phenylglycine, and the like, polyhalogen compounds (for example, Carbon tetrabromide, phenyltribromomethylsulfone, phenyltrichloromethylketone, etc.), coumarins (for example, 3- (2-benzofuroyl) -7-diethylaminocoumarin, 3- (2-benzofuroyl) -7- (1-pyrrolidinyl) ) Coumarin, 3-benzoyl-7-diethylaminocoumarin, 3- (2-methoxybenzoyl) -7-diethylaminocoumarin, 3- (4-dimethylaminobenzoyl) -7-diethylaminocoumarin, 3,3′-carbonylbis (5 , 7-di-n-propoxycoumarin), 3,3′-carbonylbis (7-diethylaminocoumarin), 3-benzoyl-7-methoxycoumarin, 3- (2-furoyl) -7-diethylaminocoumarin, 3- (4-diethylaminocinnamoyl) -7-diethylaminocoumarin, 7-methoxy-3- (3-pyridylcarbonyl) coumarin, 3-benzoyl-5,7-dipropoxycoumarin, 7-benzotriazol-2-ylcoumarin, JP-A-5-19475, JP-A-7-271028, JP2002 -363206, JP-A-2002-363207, JP-A-2002-363208, JP-A-2002-363209, etc.), amines (for example, ethyl 4-dimethylaminobenzoate, N-butyl 4-dimethylaminobenzoate, 4-dimethylaminobenzoic acid Phenethyl, 4-dimethylaminobenzoic acid 2-phthalimidoethyl, 4-dimethylaminobenzoic acid 2-methacryloyloxyethyl, pentamethylenebis (4-dimethylaminobenzoate), phenethyl of 3-dimethylaminobenzoic acid, pentamethylene ester, 4 -Dimethylaminobenzaldehyde, 2-chloro-4-dimethylaminobenzaldehyde, 4-dimethylaminobenzyl alcohol, ethyl (4-dimethylaminobenzoyl) acetate, 4-piperidinoacetophenone, 4-dimethylaminobenzoin, N, N-dimethyl -4-toluidine, N, N-diethyl-3-phenidine, tribenzylamine, dibenzylphenylamine, N-methyl-N-phenylbenzylamine, 4-bromo-N, N-dimethylaniline, tri Dodecylamine, aminofluoranes (ODB, ODBII, etc.), crystal violet lactone, leuco crystal violet, etc.), acylphosphine oxides (for example, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, bis (2 , 6-dimethoxybenzoyl) -2,4,4-trimethyl-pentylphenylphosphine oxide, Lucirin TPO, etc.).

  Further, vicinal polyketaldonyl compounds described in US Pat. No. 2,367,660, acyloin ether compounds described in US Pat. No. 2,448,828, and US Pat. No. 2,722,512 are described. An aromatic acyloin compound substituted with α-hydrocarbon, a polynuclear quinone compound described in US Pat. Nos. 3,046,127 and 2,951,758, an organoboron compound described in JP-A-2002-229194, and a radical Generator, triarylsulfonium salt (for example, salt with hexafluoroantimony or hexafluorophosphate), phosphonium salt compound (for example, (phenylthiophenyl) diphenylsulfonium salt, etc.) (effective as a cationic polymerization initiator), WO01 / 71428 Onium Such compounds.

  The said photoinitiator may be used individually by 1 type, and may use 2 or more types together. Examples of the combination of two or more include, for example, a combination of hexaarylbiimidazole and 4-aminoketone described in US Pat. No. 3,549,367, a benzothiazole compound described in Japanese Patent Publication No. 51-48516, and trihalomethyl- Combinations of s-triazine compounds, combinations of aromatic ketone compounds (such as thioxanthone) and hydrogen donors (such as dialkylamino-containing compounds and phenol compounds), combinations of hexaarylbiimidazole and titanocene, and coumarins And combinations of titanocene and phenylglycines.

  As content of the photoinitiator in the said photosensitive layer, 0.1-30 mass% is preferable, 0.5-20 mass% is more preferable, 0.5-15 mass% is especially preferable.

--Other ingredients--
Examples of the other components include sensitizers, thermal polymerization inhibitors, plasticizers, color formers, colorants, and the like, and further adhesion promoters to the substrate surface and other auxiliary agents (for example, pigments, Conductive particles, fillers, antifoaming agents, flame retardants, leveling agents, peeling accelerators, antioxidants, fragrances, thermal crosslinking agents, surface tension adjusting agents, chain transfer agents, etc.) may be used in combination. By appropriately containing these components, it is possible to adjust properties such as stability, photographic properties, print-out properties, and film properties of the target pattern forming material.

――― Sensitizer ―――
The sensitizer can be appropriately selected by visible light, ultraviolet light, visible light laser, or the like as a light irradiation means to be described later.
The sensitizer is excited by active energy rays and interacts with other substances (for example, radical generator, acid generator, etc.) (for example, energy transfer, electron transfer, etc.), thereby generating radicals, acids, etc. It is possible to generate a useful group of

  The sensitizer is not particularly limited and may be appropriately selected from known sensitizers. For example, known polynuclear aromatics (for example, pyrene, perylene, triphenylene), xanthenes (for example, Fluorescein, eosin, erythrosine, rhodamine B, rose bengal), cyanines (eg, indocarbocyanine, thiacarbocyanine, oxacarbocyanine), merocyanines (eg, merocyanine, carbomerocyanine), thiazines (eg, thionine, methylene blue) , Toluidine blue), acridines (eg, acridine orange, chloroflavin, acriflavine), anthraquinones (eg, anthraquinone), squariums (eg, squalium), acridones (eg, acridone, chloroacrid) N-methylacridone, N-butylacridone, N-butyl-chloroacridone, etc.), coumarins (for example, 3- (2-benzofuroyl) -7-diethylaminocoumarin, 3- (2-benzofuroyl) -7 -(1-pyrrolidinyl) coumarin, 3-benzoyl-7-diethylaminocoumarin, 3- (2-methoxybenzoyl) -7-diethylaminocoumarin, 3- (4-dimethylaminobenzoyl) -7-diethylaminocoumarin, 3,3 ′ -Carbonylbis (5,7-di-n-propoxycoumarin), 3,3'-carbonylbis (7-diethylaminocoumarin), 3-benzoyl-7-methoxycoumarin, 3- (2-furoyl) -7-diethylamino Coumarin, 3- (4-Diethylaminocinnamoyl) -7-diethylaminocoumarin, 7 Examples thereof include methoxy-3- (3-pyridylcarbonyl) coumarin, 3-benzoyl-5,7-dipropoxycoumarin, etc. In addition, JP-A-5-19475, JP-A-7-271028, JP And coumarin compounds described in JP 2002-363206 A, JP 2002-363207 A, JP 2002-363208 A, JP 2002-363209 A, and the like.

  Examples of the combination of the photopolymerization initiator and the sensitizer include, for example, an electron transfer start system described in JP-A-2001-305734 [(1) an electron donating initiator and a sensitizing dye, (2) A combination of an electron-accepting initiator and a sensitizing dye, (3) an electron-donating initiator, a sensitizing dye and an electron-accepting initiator (ternary initiation system), and the like.

There is no restriction | limiting in particular as content of the said sensitizer, According to the objective, it can select suitably, 0.05-30 mass% is preferable with respect to all the components of the photosensitive resin composition, 0.1% -20 mass% is more preferable, and 0.2-10 mass% is especially preferable.
When the content is less than 0.05% by mass, the sensitivity to active energy rays decreases, the exposure process takes time, and the productivity may decrease. When the content exceeds 30% by mass, the photosensitive layer May precipitate during storage.

――― Thermal polymerization inhibitor ―――
The thermal polymerization inhibitor may be added to prevent thermal polymerization or temporal polymerization of the polymerizable compound in the photosensitive layer.
Examples of the thermal polymerization inhibitor include 4-methoxyphenol, hydroquinone, alkyl or aryl-substituted hydroquinone, t-butylcatechol, pyrogallol, 2-hydroxybenzophenone, 4-methoxy-2-hydroxybenzophenone, cuprous chloride, phenothiazine. , Chloranil, naphthylamine, β-naphthol, 2,6-di-tert-butyl-4-cresol, 2,2′-methylenebis (4-methyl-6-tert-butylphenol), pyridine, nitrobenzene, dinitrobenzene, picric acid 4-toluidine, methylene blue, copper and organic chelating agent reactant, methyl salicylate, phenothiazine, nitroso compound, chelate of nitroso compound and Al, and the like.

As content of the said thermal-polymerization inhibitor, 0.001-5 mass% is preferable with respect to the said polymeric compound of the said photosensitive layer, 0.005-2 mass% is more preferable, 0.01-1 mass% Is particularly preferred.
When the content is less than 0.001% by mass, stability during storage may be reduced, and when it exceeds 5% by mass, sensitivity to active energy rays may be reduced.

――― Plasticizer ―――
The plasticizer may be added to control film physical properties (flexibility) of the photosensitive layer.
Examples of the plasticizer include dimethyl phthalate, dibutyl phthalate, diisobutyl phthalate, diheptyl phthalate, dioctyl phthalate, dicyclohexyl phthalate, ditridecyl phthalate, butyl benzyl phthalate, diisodecyl phthalate, diphenyl phthalate, diallyl phthalate, octyl capryl phthalate, and the like. Phthalic acid esters: Triethylene glycol diacetate, tetraethylene glycol diacetate, dimethylglycol phthalate, ethyl phthalyl ethyl glycolate, methyl phthalyl ethyl glycolate, butyl phthalyl butyl glycolate, triethylene glycol dicabrylate, etc. Glycol esters of tricresyl phosphate, triphenyl phosphate, etc. Acid esters; Amides such as 4-toluenesulfonamide, benzenesulfonamide, Nn-butylbenzenesulfonamide, Nn-butylacetamide; diisobutyl adipate, dioctyl adipate, dimethyl sebacate, dibutyl sepacate, dioctyl Aliphatic dibasic acid esters such as sepacate, dioctyl azelate, dibutyl malate; triethyl citrate, tributyl citrate, glycerin triacetyl ester, butyl laurate, 4,5-diepoxycyclohexane-1,2-dicarboxylic acid Examples include glycols such as dioctyl acid, polyethylene glycol, and polypropylene glycol.

  As content of the said plasticizer, 0.1-50 mass% is preferable with respect to all the components of the said photosensitive layer, 0.5-40 mass% is more preferable, 1-30 mass% is especially preferable.

――― Coloring agent ―――
The color former may be added to give a visible image (printing function) to the photosensitive layer after exposure.
Examples of the color former include tris (4-dimethylaminophenyl) methane (leuco crystal violet), tris (4-diethylaminophenyl) methane, tris (4-dimethylamino-2-methylphenyl) methane, tris (4- Diethylamino-2-methylphenyl) methane, bis (4-dibutylaminophenyl)-[4- (2-cyanoethyl) methylaminophenyl] methane, bis (4-dimethylaminophenyl) -2-quinolylmethane, tris (4-di Aminotriarylmethanes such as propylaminophenyl) methane; 3,6-bis (dimethylamino) -9-phenylxanthine, 3-amino-6-dimethylamino-2-methyl-9- (2-chlorophenyl) xanthine, etc. Aminoxanthines; 3,6-bis (diethyl Aminothioxanthenes such as mino) -9- (2-ethoxycarbonylphenyl) thioxanthene and 3,6-bis (dimethylamino) thioxanthene; 3,6-bis (diethylamino) -9,10-dihydro-9- Amino-9,10-dihydroacridine such as phenylacridine, 3,6-bis (benzylamino) -9,10-dividro-9-methylacridine; aminophenoxazine such as 3,7-bis (diethylamino) phenoxazine Aminophenothiazines such as 3,7-bis (ethylamino) phenothiazone; aminodihydrophenazines such as 3,7-bis (diethylamino) -5-hexyl-5,10-dihydrophenazine; bis (4-dimethylamino) Aminophenylmethanes such as phenyl) anilinomethane; 4-amino-4 ′ Aminohydrocinnamic acids such as dimethylaminodiphenylamine, 4-amino-α, β-dicyanohydrocinnamic acid methyl ester; hydrazines such as 1- (2-naphthyl) -2-phenylhydrazine; 1,4-bis ( Ethylamino) -2,3-dihydroanthraquinones amino-2,3-dihydroanthraquinones; phenethylanilines such as N, N-diethyl-4-phenethylaniline; 10-acetyl-3,7-bis (dimethylamino) ) An acyl derivative of a leuco dye containing basic NH such as phenothiazine; a leuco-like compound which does not have an oxidizable hydrogen such as tris (4-diethylamino-2-tolyl) ethoxycarbonylmentane but can be oxidized to a coloring compound Leucoin digoid pigment; U.S. Pat. Nos. 3,042,515 and 3,042 Organic amines that can be oxidized to a colored form as described in No. 517 (eg, 4,4′-ethylenediamine, diphenylamine, N, N-dimethylaniline, 4,4′-methylenediamine triphenylamine, N-vinylcarbazole), and among these, triarylmethane compounds such as leuco crystal violet are preferable.

Furthermore, it is generally known that the color former is combined with a halogen compound for the purpose of coloring the leuco body.
Examples of the halogen compound include halogenated hydrocarbons (for example, carbon tetrabromide, iodoform, ethylene bromide, methylene bromide, amyl bromide, isoamyl bromide, amyl iodide, isobutylene bromide, butyl iodide, Diphenylmethyl bromide, hexachloroethane, 1,2-dibromoethane, 1,1,2,2-tetrabromoethane, 1,2-dibromo-1,1,2-trichloroethane, 1,2,3 tribromopropan, 1-bromo-4-chlorobutane, 1,2,3,4-tetrabromobutane, tetrachlorocyclopropene, hexachlorocyclopentadiene, dibromocyclohexane, 1,1,1-trichloro-2,2-bis (4- Chlorophenyl) ethane); halogenated alcohol compounds (eg, 2,2,2-trichloroethanol, Bromoethanol, 1,3-dichloro-2-propanol, 1,1,1-trichloro-2-propanol, di (iodohexamethylene) aminoisopropanol, tribromo-t-butyl alcohol, 2,2,3-trichlorobutane 1,4-diol and the like; halogenated carbonyl compounds (for example, 1,1-dichloroacetone, 1,3-dichloroacetone, hexachloroacetone, hexabromoacetone, 1,1,3,3-tetrachloroacetone, 1,1 , 1-trichloroacetone, 3,4-dibromo-2-butanone, 1,4-dichloro-2-butanone-dibromocyclohexanone, etc.); halogenated ether compounds (eg 2-bromoethyl methyl ether, 2-bromoethyl ethyl ether) Di (2-bromoethyl) ether, 1,2- Chloroethyl ethyl ether, etc.); halogenated ester compounds (eg, bromoethyl acetate, ethyl trichloroacetate, trichloroethyl trichloroacetate, homopolymers and copolymers of 2,3-dibromopropyl acrylate, trichloroethyl dibromopropionate, α, β Halogenated amide compounds (for example, chloroacetamide, bromoacetamide, dichloroacetamide, trichloroacetamide, tribromoacetamide, trichloroethyltrichloroacetamide, 2-bromoisopropionamide, 2,2,2- Trichloropropionamide, N-chlorosuccinimide, N-bromosuccinimide, etc.); a compound having sulfur or phosphorus (for example, tribromomethylphenylsulfone, 4-nitro) Phenyl tribromomethyl sulfone, 4-chlorophenyl tribromomethyl sulfone, tris (2,3-dibromopropyl) phosphate, etc.), e.g., 2,4-bis (trichloromethyl) 6- phenyltriazole and the like. As the organic halogen compound, a halogen compound having two or more halogen atoms bonded to the same carbon atom is preferable, and a halogen compound having three halogen atoms per carbon atom is more preferable. The said organic halogen compound may be used individually by 1 type, and may use 2 or more types together. Among these, tribromomethylphenyl sulfone and 2,4-bis (trichloromethyl) -6-phenyltriazole are preferable.

  The content of the color former is preferably 0.01 to 20% by mass, more preferably 0.05 to 10% by mass, and particularly preferably 0.1 to 5% by mass with respect to all components of the photosensitive layer. Moreover, as content of the said halogen compound, 0.001-5 mass% is preferable with respect to all the components of the said photosensitive layer, and 0.005-1 mass% is more preferable.

---dye---
In the photosensitive layer, a dye can be used for the purpose of coloring the photosensitive resin composition for improving handleability or imparting storage stability.
Examples of the dye include brilliant green (for example, sulfate thereof), eosin, ethyl violet, erythrosine B, methyl green, crystal violet, basic fuchsin, phenolphthalein, 1,3-diphenyltriazine, alizarin red S, thymolphthalein. , Methyl violet 2B, quinaldine red, rose bengal, metanil-yellow, thymol sulfophthalein, xylenol blue, methyl orange, orange IV, diphenyltylocarbazone, 2,7-dichlorofluorescein, paramethyl red, congo red, benzo Purpurin 4B, α-naphthyl-red, Nile blue A, phenacetalin, methyl violet, malachite green, parafuxin, oil blue # 603 (Orien Chemical Co., Ltd.), rhodamine B, Rotamin 6G, etc. Victoria Pure Blue BOH can be cited, among these cationic dyes (e.g., Malachite Green oxalate, malachite green sulfates) are preferable. The counter anion of the cationic dye may be a residue of an organic acid or an inorganic acid, for example, a residue such as bromic acid, iodic acid, sulfuric acid, phosphoric acid, oxalic acid, methanesulfonic acid, toluenesulfonic acid ( Anion) and the like.

  As content of the said dye, 0.001-10 mass% is preferable with respect to all the components of the said photosensitive layer, 0.01-5 mass% is more preferable, 0.1-2 mass% is especially preferable.

――― Adhesion promoter ―――
In order to improve the adhesion between the layers or the adhesion between the pattern forming material and the substrate, a known so-called adhesion promoter can be used for each layer.

  Preferable examples of the adhesion promoter include adhesion promoters described in JP-A Nos. 5-11439, 5-341532, and 6-43638. Specifically, benzimidazole, benzoxazole, benzthiazole, 2-mercaptobenzimidazole, 2-mercaptobenzoxazole, 2-mercaptobenzthiazole, 3-morpholinomethyl-1-phenyl-triazole-2-thione, 3-morpholino Methyl-5-phenyl-oxadiazole-2-thione, 5-amino-3-morpholinomethyl-thiadiazole-2-thione, 2-mercapto-5-methylthio-thiadiazole, triazole, tetrazole, benzotriazole, carboxybenzotriazole, Examples thereof include amino group-containing benzotriazole and silane coupling agents.

  As content of the said adhesion promoter, 0.001 mass%-20 mass% are preferable with respect to all the components of the said photosensitive layer, 0.01-10 mass% is more preferable, 0.1 mass%-5 mass% % Is particularly preferred.

  The photosensitive layer is, for example, J.I. It may contain organic sulfur compounds, peroxides, redox compounds, azo or diazo compounds, photoreducible dyes, organic halogen compounds, etc. as described in Chapter 5 of “Light Sensitive Systems” Good.

  Examples of the organic sulfur compound include di-n-butyl disulfide, dibenzyl disulfide, 2-mercaprobenzthiazole, 2-mercaptobenzoxazole, thiophenol, ethyltrichloromethanesulfenate, and 2-mercaptobenzimidazole. Etc.

  Examples of the peroxide include di-t-butyl peroxide, benzoyl peroxide, and methyl ethyl ketone peroxide.

  The redox compound is a combination of a peroxide and a reducing agent, and examples thereof include ferrous ions and persulfate ions, ferric ions and peroxides.

  Examples of the azo and diazo compounds include α, α'-azobisiributyronitrile, 2-azobis-2-methylbutyronitrile, and diazonium such as 4-aminodiphenylamine.

  Examples of the photoreducible dye include rose bengal, erythrosine, eosin, acriflavine, lipoflavin, and thionine.

--Surfactant--
In order to improve the surface unevenness generated when the pattern forming material of the present invention is produced, a known surfactant can be added.
The surfactant can be appropriately selected from, for example, an anionic surfactant, a cationic surfactant, a nonionic surfactant, an amphoteric surfactant, and a fluorine-containing surfactant.

As content of the said surfactant, 0.001-10 mass% is preferable with respect to solid content of the photosensitive resin composition.
When the content is less than 0.001% by mass, the effect of improving the surface shape may not be obtained, and when it exceeds 10% by mass, the adhesion may be deteriorated.

  As the surfactant, in addition to the above-mentioned surfactant, as a fluorine-based surfactant, it contains 40% by mass or more of fluorine atoms in a carbon chain of 3 to 20, and at least 3 counted from the non-bonding terminal A polymer surfactant having, as a copolymerization component, an acrylate or methacrylate having a fluoroaliphatic group in which a hydrogen atom bonded to a carbon atom is fluorine-substituted is also preferred.

  There is no restriction | limiting in particular as thickness of the said photosensitive layer, According to the objective, it can select suitably, For example, 1-100 micrometers is preferable, 2-50 micrometers is more preferable, and 4-30 micrometers is especially preferable.

-Other layers-
There is no restriction | limiting in particular as said other layer, According to the objective, it can select suitably, For example, layers, such as a cushion layer, a barrier layer, a peeling layer, an adhesive layer, a light absorption layer, a surface protective layer, are mentioned. . The said pattern formation material may have these layers individually by 1 type, and may have 2 or more types. Moreover, you may have two or more layers of the same kind.

--Protective film--
The pattern forming material may form a protective film on the photosensitive layer.
Examples of the protective film include those used for the support, paper, paper laminated with polyethylene, polypropylene, and the like. Among these, polyethylene film and polypropylene film are preferable.
There is no restriction | limiting in particular as thickness of the said protective film, According to the objective, it can select suitably, For example, 5-100 micrometers is preferable, 8-50 micrometers is more preferable, 10-30 micrometers is especially preferable.
When the protective film is used, it is preferable that the adhesive force A between the photosensitive layer and the support and the adhesive force B between the photosensitive layer and the protective film satisfy the relationship of adhesive force A> adhesive force B.
Examples of the combination of the support and the protective film (support / protective film) include polyethylene terephthalate / polypropylene, polyethylene terephthalate / polyethylene, polyvinyl chloride / cellophane, polyimide / polypropylene, polyethylene terephthalate / polyethylene terephthalate, and the like. . Moreover, the relationship of the above adhesive forces can be satisfy | filled by surface-treating at least any one of a support body and a protective film. The surface treatment of the support may be performed in order to increase the adhesive force with the photosensitive layer. For example, coating of a primer layer, corona discharge treatment, flame treatment, ultraviolet irradiation treatment, high frequency irradiation treatment, glow treatment Examples thereof include discharge irradiation treatment, active plasma irradiation treatment, and laser beam irradiation treatment.

Moreover, as a static friction coefficient of the said support body and the said protective film, 0.3-1.4 are preferable and 0.5-1.2 are more preferable.
When the coefficient of static friction is less than 0.3, slipping is excessive, so that winding deviation may occur when the roll is formed, and when it exceeds 1.4, it is difficult to wind into a good roll. Sometimes.
The method for measuring the coefficient of friction is not particularly limited and can be appropriately selected depending on the purpose. For example, based on JIS K 7125, measurement under conditions such as SUS304, surface pressure of 0.005 MPa, etc. Can be mentioned.

  It is preferable that the pattern forming material is wound around a cylindrical core, wound into a long roll, and stored. There is no restriction | limiting in particular as length of the said elongate pattern formation material, For example, it can select suitably from the range of 10m-20,000m. Further, slitting may be performed so that the user can easily use, and a long body in the range of 100 m to 1,000 m may be formed into a roll. In this case, it is preferable that the support is wound up so as to be the outermost side. The roll-shaped pattern forming material may be slit into a sheet shape. From the viewpoint of protecting the end face and preventing edge fusion during storage, it is preferable to install a separator (especially moisture-proof and desiccant-containing) on the end face, and use a low moisture-permeable material for packaging. It is preferable.

  The protective film may be surface-treated in order to adjust the adhesion between the protective film and the photosensitive layer. In the surface treatment, for example, an undercoat layer made of a polymer such as polyorganosiloxane, fluorinated polyolefin, polyfluoroethylene, or polyvinyl alcohol is formed on the surface of the protective film. The undercoat layer can be formed by applying the polymer coating solution to the surface of the protective film and then drying at 30 to 150 ° C. (especially 50 to 120 ° C.) for 1 to 30 minutes.

-Manufacturing method of pattern forming material-
The pattern forming material can be manufactured, for example, as follows.
First, the above-mentioned various materials are dissolved, emulsified or dispersed in water or a solvent to prepare a photosensitive resin composition solution.

  There is no restriction | limiting in particular as a solvent of the said photosensitive resin composition solution, According to the objective, it can select suitably, For example, methanol, ethanol, n-propanol, isopropanol, n-butanol, sec-butanol, n- Alcohols such as hexanol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, diisobutyl ketone; ethyl acetate, butyl acetate, n-amyl acetate, methyl sulfate, ethyl propionate, dimethyl phthalate, ethyl benzoate and Esters such as methoxypropyl acetate; aromatic hydrocarbons such as toluene, xylene, benzene, and ethylbenzene; carbon tetrachloride, trichloroethylene, chloroform, 1,1,1-trichloroethane, methylene chloride, monochlorobenzene Any halogenated hydrocarbons; ethers such as tetrahydrofuran, diethyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, 1-methoxy-2-propanol; dimethylformamide, dimethylacetamide, dimethylsulfoxide, sulfolane, etc. . These may be used alone or in combination of two or more. Moreover, you may add a well-known surfactant.

Next, the said photosensitive resin composition solution is apply | coated on a support body, a photosensitive layer is formed by making it dry, and a pattern formation material can be manufactured.
The method for applying the photosensitive resin composition solution is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include a spray method, a roll coating method, a spin coating method, a slit coating method, and an extrusion coating method. And various coating methods such as a curtain coating method, a die coating method, a gravure coating method, a wire bar coating method, and a knife coating method.
The drying conditions vary depending on each component, the type of solvent, the use ratio, and the like, but are usually about 60 to 110 ° C. for about 30 seconds to 15 minutes.

--Laminated body--
The exposure target is not particularly limited as long as it is the pattern forming material having a photosensitive layer, and can be appropriately selected according to the purpose. For example, a laminate formed by forming the pattern forming material on a substrate It is preferably performed on the body.

――― Substrate ―――
The substrate is not particularly limited, and can be appropriately selected from known materials having high surface smoothness to those having an uneven surface. A plate-shaped substrate (substrate) is preferable and specific. Examples include known printed wiring board forming substrates (for example, copper-clad laminates), glass plates (for example, soda glass plates), synthetic resin films, paper, metal plates, and the like.

  The substrate can be used by forming a laminate on which the photosensitive layer of the pattern forming material is laminated on the substrate. That is, by exposing the photosensitive layer of the pattern forming material in the laminate, the exposed region can be cured, and a pattern can be formed by a development process described later.

  The pattern forming material can be widely used for pattern formation of printed wiring boards, color filters, column materials, rib materials, spacers, partition members and other display members, holograms, micromachines, proofs, and the like. It can be suitably used for a forming method and a pattern forming apparatus.

-Pattern forming apparatus and pattern forming method-
The pattern forming method of the present invention includes at least an exposure step and includes other appropriately selected steps.

--Exposure process--
In the exposure step, the light irradiating unit includes a light modulating unit having n pixel portions that receive and emit light from the light irradiating unit with respect to the photosensitive layer in the pattern forming material having the photosensitive layer on the support. After the light from the light is modulated, exposure is performed through a microlens array in which microlenses having aspherical surfaces capable of correcting aberration due to distortion of the exit surface in the picture element portion are arranged.

――― Modulation means――
The light modulation means is not particularly limited as long as it has n picture elements, and can be appropriately selected according to the purpose. For example, a spatial light modulation element or the like is preferable.
Examples of the spatial light modulator include a digital micromirror device (DMD), a MEMS (Micro Electro Mechanical Systems) type spatial light modulator (SLM), and modulates transmitted light by an electro-optic effect. An optical element (PLZT element), a liquid crystal optical shutter (FLC), etc. are mentioned, Among these, DMD is mentioned suitably.

Hereinafter, an example of the light modulation means will be described with reference to the drawings.
As shown in FIG. 2, in the DMD 50, a large number (for example, 1024 × 768) of micromirrors (micromirrors) 62 constituting pixels (pixels) are arranged in a lattice pattern on an SRAM cell (memory cell) 60. It is a mirror device arranged. In each pixel, a micromirror 62 supported by a support column is provided at the top, and a material having high reflectance such as aluminum is deposited on the surface of the micromirror 62. The reflectance of the micromirror 62 is 90% or more, and the arrangement pitch is 13.7 μm as an example in both the vertical and horizontal directions. A silicon gate CMOS SRAM cell 60 manufactured in a normal semiconductor memory manufacturing line is disposed directly below the micromirror 62 via a support including a hinge and a yoke, and the entire structure is monolithic. ing.

  When a digital signal is written in the SRAM cell 60 of the DMD 50, the micromirror 62 supported by the support is tilted in a range of ± α degrees (for example, ± 12 degrees) with respect to the substrate side on which the DMD 50 is disposed with the diagonal line as the center. It is done. 3A shows a state in which the micromirror 62 is tilted to + α degrees when the micromirror 62 is in an on state, and FIG. 3B shows a state in which the micromirror 62 is tilted to −α degrees that is in an off state. Therefore, by controlling the tilt of the micromirror 62 in each pixel of the DMD 50 according to the pattern information as shown in FIG. 2, the laser light B incident on the DMD 50 is reflected in the tilt direction of each micromirror 62. The

  FIG. 2 shows an example of a state in which a part of the DMD 50 is enlarged and the micromirror 62 is controlled to + α degrees or −α degrees. The on / off control of each micromirror 62 is performed by the controller 302 (see FIG. 13) connected to the DMD 50. Further, a light absorber (not shown) is arranged in the direction in which the laser beam B reflected by the off-state micromirror 62 travels.

  Further, it is preferable that the DMD 50 is arranged with a slight inclination so that the short side forms a predetermined angle θ (for example, 0.1 ° to 5 °) with the sub-scanning direction. 4A shows the scanning trajectory of the reflected light image (exposure beam) 53 by each micromirror when the DMD 50 is not tilted, and FIG. 4B shows the scanning trajectory of the exposure beam 53 when the DMD 50 is tilted. Show.

In the DMD 50, a number of micromirror arrays in which a large number (for example, 1024) of micromirrors are arranged in the longitudinal direction are arranged in a short direction (for example, 756 sets). as shown, by tilting the DMD 50, the pitch P ₁ of the scanning locus of the exposure beams 53 from each micromirror (scan line), it becomes narrower than the pitch P ₂ of the scanning lines in the case of not tilting the DMD 50, significant resolution Can be improved. On the other hand, the inclination angle of the DMD 50 is small, the scanning width _{W 2} in the case of tilting the DMD 50, which is substantially equal to the scanning width _{W 1} when not inclined DMD 50.

Next, a method for increasing the modulation speed in the optical modulation means (hereinafter referred to as “high-speed modulation”) will be described.
It is preferable that the light modulation unit is capable of controlling any less than n pixel elements arranged continuously from the n pixel elements according to pattern information. There is a limit to the data processing speed of the light modulation means, and the modulation speed per line is determined in proportion to the number of pixels to be used. By using, the modulation speed per line is increased.

Hereinafter, the high-speed modulation will be further described with reference to the drawings.
When the laser light B is irradiated from the fiber array light source 66 to the DMD 50, the laser light reflected when the micromirror of the DMD 50 is in an on state is imaged on the pattern forming material 150 by the lens systems 54 and 58. In this manner, the laser light emitted from the fiber array light source 66 is turned on / off for each pixel, and the pattern forming material 150 is exposed in the number of pixel units (exposure area 168) substantially equal to the number of used pixel elements of the DMD 50. . Further, when the pattern forming material 150 is moved at a constant speed together with the stage 152, the pattern forming material 150 is sub-scanned in the direction opposite to the stage moving direction by the scanner 162, and a strip-shaped exposed region 170 is provided for each exposure head 166. Is formed.

  In this example, as shown in FIGS. 5A and 5B, in the DMD 50, 768 sets of micromirror arrays in which 1024 micromirrors are arranged in the main scanning direction are arranged in the subscanning direction. In this example, the controller 302 (see FIG. 13) controls so that only a part of the micromirror rows (for example, 1024 × 256 rows) are driven.

  In this case, a micromirror array arranged at the center of the DMD 50 as shown in FIG. 5 (A) may be used, and a micromirror arranged at the end of the DMD 50 as shown in FIG. 5 (B). A column may be used. In addition, when a defect occurs in some of the micromirrors, the micromirror array to be used may be appropriately changed depending on the situation, such as using a micromirror array in which no defect has occurred.

  Since the data processing speed of the DMD 50 is limited and the modulation speed per line is determined in proportion to the number of pixels used, the modulation speed per line can be increased by using only a part of the micromirror array. Get faster. On the other hand, in the case of an exposure method in which the exposure head is continuously moved relative to the exposure surface, it is not necessary to use all the pixels in the sub-scanning direction.

  When the sub-scan of the pattern forming material 150 by the scanner 162 is finished and the rear end of the pattern forming material 150 is detected by the sensor 164, the stage 152 is moved upstream of the gate 160 along the guide 158 by the stage driving device 304. It returns to the origin on the side and is moved again along the guide 158 from the upstream side to the downstream side of the gate 160 at a constant speed.

  For example, when only 384 sets of 768 sets of micromirror arrays are used, modulation can be performed twice as fast per line as compared with the case of using all 768 sets. Also, when only 256 pairs are used in the 768 sets of micromirror arrays, modulation can be performed three times faster per line than when all 768 sets are used.

  As described above, according to the pattern forming method of the present invention, the micromirror array in which 1,024 micromirrors are arranged in the main scanning direction includes the DMD in which 768 sets are arranged in the subscanning direction. By controlling so that only a part of the micromirror rows are driven by the controller, the modulation rate per line becomes faster than when all the micromirror rows are driven.

  In addition, an example in which the DMD micromirror is partially driven has been described, but the length of the direction corresponding to the predetermined direction is reflected on the substrate longer than the length of the direction intersecting the predetermined direction according to the control signal. Even if a long and narrow DMD in which a large number of micromirrors capable of changing the surface angle are arranged in a two-dimensional manner is used, the number of micromirrors for controlling the angle of the reflecting surface is reduced. Can do.

  The exposure method is preferably performed while relatively moving the exposure light and the photosensitive layer, and in this case, it is preferable to use the high-speed modulation together. Thereby, high-speed exposure can be performed in a short time.

  In addition, as shown in FIG. 6, the entire surface of the pattern forming material 150 may be exposed by a single scan in the X direction by the scanner 162, and as shown in FIGS. 7A and 7B, the scanner 162. After the pattern forming material 150 is scanned in the X direction, the scanner 162 is moved one step in the Y direction, and scanning is performed in the X direction. Thus, the pattern forming material 150 is scanned a plurality of times. Alternatively, the entire surface may be exposed. In this example, the scanner 162 includes 18 exposure heads 166. Note that the exposure head includes at least the light irradiation unit and the light modulation unit.

  The exposure is performed on a partial area of the photosensitive layer to cure the partial area, and uncured areas other than the cured partial area are removed in a development step described later. A pattern is formed.

Next, an example of a pattern forming apparatus including the light modulation means will be described with reference to the drawings.
As shown in FIG. 8, the pattern forming apparatus including the light modulation means includes a flat plate stage 152 that adsorbs and holds a sheet-like pattern forming material 150 on the surface.
Two guides 158 extending along the stage moving direction are installed on the upper surface of the thick plate-shaped installation table 156 supported by the four legs 154. The stage 152 is arranged so that the longitudinal direction thereof faces the stage moving direction, and is supported by a guide 158 so as to be reciprocally movable. The pattern forming apparatus has a drive device (not shown) for driving the stage 152 along the guide 158.

  A U-shaped gate 160 is provided at the center of the installation table 156 so as to straddle the movement path of the stage 152. Each of the ends of the U-shaped gate 160 is fixed to both side surfaces of the installation table 156. A scanner 162 is provided on one side of the gate 160, and a plurality of (for example, two) detection sensors 164 for detecting the front and rear ends of the pattern forming material 150 are provided on the other side. . The scanner 162 and the detection sensor 164 are respectively attached to the gate 160 and fixedly arranged above the moving path of the stage 152. The scanner 162 and the detection sensor 164 are connected to a controller (not shown) that controls them.

As shown in FIGS. 9 and 10B, the scanner 162 includes a plurality of (for example, 14) exposure heads 166 arranged in an approximately matrix of m rows and n columns (for example, 3 rows and 5 columns). ing. In this example, four exposure heads 166 are arranged in the third row in relation to the width of the pattern forming material 150. In addition, when showing each exposure head arranged in the m-th row and the n-th column, it is expressed as an exposure head 166 _mn .

An exposure area 168 by the exposure head 166 has a rectangular shape with a short side in the sub-scanning direction. Accordingly, as the stage 152 moves, a strip-shaped exposed region 170 is formed in the pattern forming material 150 for each exposure head 166. In addition, when showing the exposure area by each exposure head arranged in the m-th row and the n-th column, it is expressed as an exposure area 168 _mn .

Further, as shown in FIGS. 10A and 10B, each of the exposure heads in each row arranged in a line so that the strip-shaped exposed regions 170 are arranged without gaps in the direction orthogonal to the sub-scanning direction. These are arranged with a predetermined interval (natural number times the long side of the exposure area, twice in this example) in the arrangement direction. Therefore, can not be exposed portion between the exposure area _{168 11} in the first row and the exposure area _{168 12,} it can be exposed by the second row of the exposure area _{168 21} and the exposure area _{168 31} in the third row.

As shown in FIG. 11 and FIG. 12, each of the exposure heads 166 _{11 to} 166 _mn serves as the light modulation means (spatial light modulation element that modulates each pixel) according to pattern information. A digital micromirror device (DMD) 50 manufactured by Texas Instruments, USA is provided. The DMD 50 is connected to the controller 302 (see FIG. 13) having a data processing unit and a mirror drive control unit. The data processing unit of the controller 302 generates a control signal for driving and controlling each micromirror in the area to be controlled by the DMD 50 for each exposure head 166 based on the input pattern information. The area to be controlled will be described later. The mirror drive control unit controls the angle of the reflection surface of each micromirror of the DMD 50 for each exposure head 166 based on the control signal generated by the pattern information processing unit. The control of the angle of the reflecting surface will be described later.

  On the light incident side of the DMD 50, a fiber array light source 66 having a laser emitting portion in which emission ends (light emitting points) of optical fibers are arranged in a line along a direction corresponding to the long side direction of the exposure area 168, A lens system 67 that corrects the laser light emitted from the fiber array light source 66 and collects it on the DMD, and a mirror 69 that reflects the laser light transmitted through the lens system 67 toward the DMD 50 are arranged in this order. In FIG. 11, the lens system 67 is schematically shown.

  As shown in detail in FIG. 12, the lens system 67 is inserted into the optical path of the light passing through the condenser lens 71 and the condenser lens 71 that collects the laser light B as the illumination light emitted from the fiber array light source 66. A rod-shaped optical integrator (hereinafter referred to as a rod integrator) 72 and an imaging lens 74 disposed in front of the rod integrator 72, that is, on the mirror 69 side. The condensing lens 71, the rod integrator 72, and the imaging lens 74 cause the laser light emitted from the fiber array light source 66 to enter the DMD 50 as a light beam that is close to parallel light and has a uniform beam cross-sectional intensity. The shape and action of the rod integrator 72 will be described in detail later.

  The laser beam B emitted from the lens system 67 is reflected by the mirror 69 and irradiated to the DMD 50 via the TIR (total reflection) prism 70. In FIG. 11, the TIR prism 70 is omitted.

  An imaging optical system 51 that images the laser beam B reflected by the DMD 50 on the pattern forming material 150 is disposed on the light reflection side of the DMD 50. The imaging optical system 51 is schematically shown in FIG. 11, but as shown in detail in FIG. 12, the imaging optical system 51 includes a first imaging optical system including lens systems 52 and 54 and lens systems 57 and 58. A second imaging optical system, a microlens array 55 inserted between these imaging optical systems, and an aperture array 59 are included.

  The microlens array 55 is formed by two-dimensionally arranging a large number of microlenses 55a corresponding to the pixels of the DMD 50. In this example, as described later, only 1024 × 256 rows of the 1024 × 768 rows of micromirrors of the DMD 50 are driven, and accordingly, 1024 × 256 rows of microlenses 55a are arranged. The arrangement pitch of the micro lenses 55a is 41 μm in both the vertical and horizontal directions. As an example, the microlens 55a has a focal length of 0.19 mm, an NA (numerical aperture) of 0.11, and is formed from the optical glass BK7. The shape of the micro lens 55a will be described in detail later. The beam diameter of the laser beam B at the position of each microlens 55a is 41 μm.

  The aperture array 59 is formed by forming a large number of apertures (openings) 59 a corresponding to the respective micro lenses 55 a of the micro lens array 55. The diameter of the aperture 59a is, for example, 10 μm.

  The first imaging optical system enlarges the image by the DMD 50 three times and forms an image on the microlens array 55. The second imaging optical system enlarges the image that has passed through the microlens array 55 by 1.6 times, and forms and projects the image on the pattern forming material 150. Therefore, as a whole, the image formed by the DMD 50 is enlarged and enlarged by 4.8 times, and is imaged and projected on the pattern forming material 150.

  A prism pair 73 is disposed between the second imaging optical system and the pattern forming material 150. By moving the prism pair 73 in the vertical direction in FIG. 12, an image on the pattern forming material 150 is obtained. The focus can be adjusted. In the figure, the pattern forming material 150 is sub-scanned in the direction of arrow F.

The picture element portion is not particularly limited as long as it can receive and emit light from the light irradiation means, and can be appropriately selected according to the purpose. For example, it is formed by the pattern forming method of the present invention. When the pattern to be processed is an image pattern, it is a pixel, and when the light modulation means includes a DMD, it is a micromirror.
There is no restriction | limiting in particular as the number (the said n) of picture element parts which the said light modulation element has, It can select suitably according to the objective.
There is no restriction | limiting in particular as an arrangement | sequence of the pixel part in the said light modulation element, According to the objective, it can select suitably, For example, it is preferable to arrange in two dimensions, It arranges in a grid | lattice form. It is more preferable.

――― Micro lens array ―――
The microlens array is not particularly limited as long as microlenses having an aspheric surface capable of correcting aberration due to distortion of the exit surface in the pixel portion are arranged, and can be appropriately selected according to the purpose. .

  There is no restriction | limiting in particular as said aspherical surface, According to the objective, it can select suitably, For example, a toric surface is preferable.

  Hereinafter, the microlens array, the aperture array, the imaging optical system, and the like will be described with reference to the drawings.

FIG. 14A shows DMD 50, light irradiation means 144 for irradiating DMD 50 with laser light, lens systems (imaging optical systems) 454, 458, DMD 50 for enlarging and imaging the laser light reflected by DMD 50. A microlens array 472 in which a large number of microlenses 474 are arranged corresponding to the picture element portion, an aperture array 476 in which a large number of apertures 478 are provided corresponding to each microlens of the microlens array 472, and a laser that has passed through the aperture An exposure head composed of lens systems (imaging optical systems) 480 and 482 for forming an image of light on an exposed surface 56 is shown.
Here, FIG. 15 shows the result of measuring the flatness of the reflection surface of the micromirror 62 constituting the DMD 50. In the figure, the same height positions of the reflecting surfaces are shown connected by contour lines, and the pitch of the contour lines is 5 nm. Note that the x direction and the y direction shown in the figure are two diagonal directions of the micromirror 62, and the micromirror 62 rotates around the rotation axis extending in the y direction as described above. 16A and 16B show the height position displacement of the reflecting surface of the micromirror 62 along the x direction and the y direction, respectively.

  As shown in FIGS. 15 and 16, there is distortion on the reflecting surface of the micromirror 62, and when attention is particularly paid to the center of the mirror, distortion in one diagonal direction (y direction) is different from that in the other diagonal line. It is larger than the distortion in the direction (x direction). For this reason, the problem that the shape in the condensing position of the laser beam B condensed with the micro lens 55a of the micro lens array 55 may be distorted may occur.

  In the pattern forming method of the present invention, in order to prevent the above problem, the microlens 55a of the microlens array 55 has a special shape different from the conventional one. Hereinafter, this point will be described in detail.

  FIGS. 17A and 17B respectively show the front and side shapes of the entire microlens array 55 in detail. These drawings also show the dimensions of each part of the microlens array 55, and the unit thereof is mm. In the pattern forming method of the present invention, as described above with reference to FIG. 5, the 1024 × 256 rows of micromirrors 62 of the DMD 50 are driven. A row of 1024 microlenses 55a arranged in the direction is arranged in parallel in the vertical direction. In FIG. 9A, the arrangement order of the microlens array 55 is indicated by j in the horizontal direction and k in the vertical direction.

  18A and 18B show the front shape and the side shape of one microlens 55a in the microlens array 55, respectively. In FIG. 9A, the contour lines of the micro lens 55a are also shown. The end surface of each microlens 55a on the light emitting side has an aspherical shape that corrects aberration due to distortion of the reflecting surface of the micromirror 62. More specifically, the micro lens 55a is a toric lens, and has a radius of curvature Rx = −0.125 mm in a direction optically corresponding to the x direction and a radius of curvature Ry = − in a direction corresponding to the y direction. 0.1 mm.

  Therefore, the condensing state of the laser beam B in the cross section parallel to the x direction and the y direction is roughly as shown in FIGS. 19A and 19B, respectively. That is, when the cross section parallel to the x direction is compared with the cross section parallel to the y direction, the radius of curvature of the microlens 55a is smaller and the focal length is shorter in the latter cross section. .

  FIGS. 20A, 20B, 20C, and 20D show the results of simulating the beam diameter in the vicinity of the condensing position (focal position) of the microlens 55a when the microlens 55a has the above-described shape by a computer. For comparison, FIGS. 21A, 21B, 21C, and 21D show the results of a similar simulation when the microlens 55a has a spherical shape with a radius of curvature Rx = Ry = −0.1 mm. In addition, the value of z in each figure has shown the evaluation position of the focus direction of the micro lens 55a by the distance from the beam emission surface of the micro lens 55a.

The surface shape of the microlens 55a used for the simulation is calculated by the following calculation formula.

  In the above formula, Cx means the curvature in the x direction (= 1 / Rx), Cy means the curvature in the y direction (= 1 / Ry), and X is the lens optical axis in the x direction. The distance from O means Y, and Y means the distance from the lens optical axis O in the y direction.

  20A to 20D and FIGS. 21A to 21D, in the pattern forming method of the present invention, the microlens 55a is focused on the micro lens 55a with a focal length in the cross section parallel to the y direction. By using a toric lens smaller than the distance, distortion of the beam shape in the vicinity of the condensing position is suppressed. If so, the pattern forming material 150 can be exposed to a higher-definition image without distortion. It can also be seen that the present embodiment shown in FIGS. 22a to 22d has a wider region with a smaller beam diameter, that is, a greater depth of focus.

  In addition, when the magnitude relation of the distortion of the center part in the x direction and the y direction of the micromirror 62 is opposite to the above, the focal length in the cross section parallel to the x direction is in the cross section parallel to the y direction. If the microlens is formed of a toric lens that is smaller than the focal length, similarly, it is possible to expose the pattern forming material 150 with a higher definition image without distortion.

  In addition, the aperture array 59 disposed in the vicinity of the condensing position of the microlens array 55 is disposed such that only light having passed through the corresponding microlens 55a is incident on each aperture 59a. That is, by providing this aperture array 59, it is possible to prevent light from adjacent microlenses 55a not corresponding to each aperture 59a from entering, and to increase the extinction ratio.

  Originally, if the diameter of the aperture 59a of the aperture array 59 installed for the above purpose is reduced to some extent, an effect of suppressing the distortion of the beam shape at the condensing position of the microlens 55a can be obtained. However, in such a case, the amount of light blocked by the aperture array 59 is increased, and the light use efficiency is reduced. On the other hand, when the microlens 55a has an aspherical shape, the light utilization efficiency is kept high because the light is not blocked.

  In the pattern forming method of the present invention, the microlens 55a may have a secondary aspherical shape or a higher order (4th, 6th,...) Aspherical shape. By adopting the higher order aspherical shape, the beam shape can be further refined.

  In the embodiment described above, the end surface on the light emission side of the micro lens 55a is an aspherical surface (toric surface). However, one of the two light passing end surfaces is a spherical surface and the other is a cylindrical surface. Thus, the microlens array can be configured to obtain the same effect as the above embodiment.

  Furthermore, in the embodiment described above, the microlens 55a of the microlens array 55 has an aspherical shape that corrects aberration due to distortion of the reflecting surface of the micromirror 62. Such an aspherical shape is adopted. Instead, the same effect can be obtained even if each microlens constituting the microlens array has a refractive index distribution that corrects aberration due to distortion of the reflection surface of the micromirror 62.

  An example of such a microlens 155a is shown in FIG. (A) and (B) of the same figure respectively show the front shape and side shape of the micro lens 155a, and the external shape of the micro lens 155a is a parallel plate shape as shown in the figure. The x and y directions in the figure are as described above.

  24A and 24B schematically show the condensing state of the laser beam B in the cross section parallel to the x direction and the y direction by the microlens 155a. The microlens 155a has a refractive index distribution that gradually increases outward from the optical axis O. In the drawing, the broken line shown in the microlens 155a indicates that the refractive index is predetermined from the optical axis O. The position changed with the pitch is shown. As shown in the figure, when the cross section parallel to the x direction and the cross section parallel to the y direction are compared, the ratio of the refractive index change of the microlens 155a is larger in the latter cross section, and the focal length is larger. It is shorter. Even when a microlens array composed of such a gradient index lens is used, it is possible to obtain the same effect as when the microlens array 55 is used.

  In addition, in the microlens whose surface shape is aspherical like the microlens 55a previously shown in FIGS. 18 and 19, the refractive index distribution as described above is given together, and both by the surface shape and the refractive index distribution. The aberration due to the distortion of the reflection surface of the micromirror 62 may be corrected.

  In the above embodiment, the aberration due to the distortion of the reflection surface of the micromirror 62 constituting the DMD 50 is corrected. However, in the pattern forming method of the present invention using the spatial light modulator other than the DMD, the spatial light is also corrected. In the case where distortion exists on the surface of the picture element portion of the modulation element, the present invention can be applied to correct aberration due to the distortion and prevent distortion of the beam shape.

Next, the imaging optical system will be further described.
In the exposure head, when the laser beam is irradiated from the light irradiation unit 144, the cross-sectional area of the light beam reflected in the ON direction by the DMD 50 is enlarged several times (for example, two times) by the lens systems 454 and 458. The The expanded laser light is condensed by each microlens of the microlens array 472 so as to correspond to each pixel part of the DMD 50, and passes through the corresponding aperture of the aperture array 476. The laser light that has passed through the aperture is imaged on the exposed surface 56 by the lens systems 480 and 482.

  In this imaging optical system, the laser light reflected by the DMD 50 is magnified several times by the magnifying lenses 454 and 458 and projected onto the exposed surface 56, so that the entire image area is widened. At this time, if the microlens array 472 and the aperture array 476 are not arranged, as shown in FIG. 14B, one pixel size (spot size) of each beam spot BS projected onto the exposed surface 56 is set. MTF (Modulation Transfer Function) characteristics representing the sharpness of the exposure area 468 are reduced depending on the size of the exposure area 468.

  On the other hand, when the microlens array 472 and the aperture array 476 are arranged, the laser light reflected by the DMD 50 is condensed corresponding to each pixel part of the DMD 50 by each microlens of the microlens array 472. Thereby, as shown in FIG. 14C, even when the exposure area is enlarged, the spot size of each beam spot BS can be reduced to a desired size (for example, 10 μm × 10 μm), and the MTF characteristic is obtained. It is possible to perform high-definition exposure while preventing a decrease in the image quality. The exposure area 468 is tilted because the DMD 50 is tilted and arranged in order to eliminate the gap between the pixels.

  In addition, the aperture array can shape the beam so that the spot size on the surface to be exposed 56 is constant even if the beam is thick due to the aberration of the micro lens. Thus, crosstalk between adjacent picture elements can be prevented by passing through the aperture array.

  Further, by using a high-intensity light source, which will be described later, as the light irradiating means 144, the angle of the light beam incident on each microlens of the microlens array 472 from the lens 458 becomes small. The incident can be prevented. That is, a high extinction ratio can be realized.

-Other optical systems-
In the pattern forming method of the present invention, it may be used in combination with other optical systems appropriately selected from known optical systems, for example, a light amount distribution correcting optical system composed of a pair of combination lenses.
The light amount distribution correcting optical system changes the light flux width at each exit position so that the ratio of the light flux width at the peripheral portion to the light flux width at the central portion close to the optical axis is smaller on the exit side than on the incident side. When the DMD is irradiated with the parallel light flux from the light irradiation means, the light amount distribution on the irradiated surface is corrected so as to be substantially uniform. Hereinafter, the light quantity distribution correcting optical system will be described with reference to the drawings.

  First, as shown in FIG. 24A, the case where the entire luminous flux widths (total luminous flux widths) H0 and H1 are the same for the incident luminous flux and the outgoing luminous flux will be described. In FIG. 24A, the portions denoted by reference numerals 51 and 52 virtually indicate the entrance surface and the exit surface in the light quantity distribution correction optical system.

  In the light quantity distribution correcting optical system, it is assumed that the light flux widths h0 and h1 of the light beam incident on the central portion near the optical axis Z1 and the light flux incident on the peripheral portion are the same (h0 = hl). The light quantity distribution correcting optical system expands the light flux width h0 of the incident light flux at the central portion with respect to the light having the same light flux width h0, h1 on the incident side, and conversely changes the incident light flux at the peripheral portion. On the other hand, the light beam width h1 is reduced. That is, the width h10 of the outgoing light beam at the center and the width h11 of the outgoing light beam at the periphery are set to satisfy h11 <h10. In terms of the ratio of the luminous flux width, the ratio “h11 / h10” of the luminous flux width in the peripheral portion to the luminous flux width in the central portion on the emission side is smaller than the ratio (h1 / h0 = 1) on the incident side ( (H11 / h10) <1).

  By changing the light flux width in this way, the light flux in the central part, which normally has a large light quantity distribution, can be utilized in the peripheral part where the light quantity is insufficient, and the overall light utilization efficiency is not reduced. In addition, the light quantity distribution on the irradiated surface is made substantially uniform. The degree of uniformity is, for example, such that the unevenness in the amount of light in the effective area is within 30%, preferably within 20%.

  The operations and effects of the light quantity distribution correcting optical system are the same when the entire light beam width is changed between the incident side and the exit side (FIGS. 25B and 25C).

  FIG. 25B shows a case where the entire light flux width H0 on the incident side is “reduced” to the width H2 and emitted (H0> H2). Even in such a case, the light quantity distribution correcting optical system has the same light beam width h0, h1 on the incident side, and the light beam width h10 in the central part is larger than that in the peripheral part on the emission side. Conversely, the luminous flux width h11 at the peripheral part is made smaller than that at the central part. Considering the reduction rate of the light beam, the reduction rate with respect to the incident light beam in the central part is made smaller than that in the peripheral part, and the reduction rate with respect to the incident light beam in the peripheral part is made larger than that in the central part. Also in this case, the ratio “H11 / H10” of the light flux width in the peripheral portion to the light flux width in the central portion is smaller than the ratio (h1 / h0 = 1) on the incident side ((h11 / h10) <1) .

  FIG. 25C shows a case where the entire light flux width H0 on the incident side is “enlarged” by the width Η3 and emitted (H0 <H3). Even in such a case, the light quantity distribution correcting optical system has the same light beam width h0, h1 on the incident side, and the light beam width h10 in the central part is larger than that in the peripheral part on the emission side. Conversely, the luminous flux width h11 at the peripheral part is made smaller than that at the central part. Considering the expansion rate of the light beam, the expansion rate for the incident light beam in the central portion is made larger than that in the peripheral portion, and the expansion rate for the incident light beam in the peripheral portion is made smaller than that in the central portion. Also in this case, the ratio “h11 / h10” of the light flux width in the peripheral portion to the light flux width in the central portion is smaller than the ratio (h1 / h0 = 1) on the incident side ((h11 / h10) <1). .

  As described above, the light quantity distribution correcting optical system changes the light beam width at each emission position, and the ratio of the light beam width in the peripheral part to the light beam width in the central part near the optical axis Z1 is larger on the outgoing side than on the incident side. Since the light having the same luminous flux width on the incident side is larger on the outgoing side, the luminous flux width in the central portion is larger than that in the peripheral portion, and the luminous flux width in the peripheral portion is smaller than that in the central portion. Become smaller. As a result, it is possible to make use of the light beam at the center part to the peripheral part, and it is possible to form a light beam cross-section with a substantially uniform light amount distribution without reducing the light use efficiency of the entire optical system.

Next, an example of specific lens data of a pair of combination lenses used as the light quantity distribution correcting optical system will be shown. In this example, lens data in the case where the light amount distribution in the cross section of the emitted light beam is a Gaussian distribution as in the case where the light irradiation means is a laser array light source is shown. When one semiconductor laser is connected to the incident end of the single mode optical fiber, the light quantity distribution of the emitted light beam from the optical fiber becomes a Gaussian distribution. The pattern forming method of the present invention can be applied to such a case. Further, the present invention can be applied to a case where the light amount in the central portion near the optical axis is larger than the light amount in the peripheral portion, for example, by reducing the core diameter of the multi-mode optical fiber and approaching the configuration of the single mode optical fiber.
Table 1 below shows basic lens data.

  As can be seen from Table 1, the pair of combination lenses is composed of two rotationally symmetric aspherical lenses. If the light incident side surface of the first lens disposed on the light incident side is the first surface and the light exit side surface is the second surface, the first surface is aspherical. In addition, when the surface on the light incident side of the second lens disposed on the light emitting side is the third surface and the surface on the light emitting side is the fourth surface, the fourth surface is aspherical.

In Table 1, the surface number Si indicates the number of the i-th surface (i = 1 to 4), the curvature radius ri indicates the curvature radius of the i-th surface, and the surface interval di indicates the i-th surface and the i + 1-th surface. The distance between surfaces on the optical axis is shown. The unit of the surface interval di value is millimeter (mm). The refractive index Ni indicates the value of the refractive index with respect to the wavelength of 405 nm of the optical element having the i-th surface.
Table 2 below shows the aspheric data of the first surface and the fourth surface.

  The aspheric data is expressed by a coefficient in the following formula (A) that represents the aspheric shape.

In the above formula (A), each coefficient is defined as follows.
Z: Length of a perpendicular line (mm) drawn from a point on the aspheric surface at a height ρ from the optical axis to the tangent plane (plane perpendicular to the optical axis) of the apex of the aspheric surface
ρ: Distance from optical axis (mm)
K: Conic coefficient C: Paraxial curvature (1 / r, r: Paraxial radius of curvature)
ai: i-th order (i = 3 to 10) aspheric coefficient In the numerical values shown in Table 2, the symbol “E” indicates that the subsequent numerical value is a “power index” with 10 as the base. The numerical value represented by the exponential function with the base of 10 is multiplied by the numerical value before “E”. For example, “1.0E-02” indicates “1.0 × 10 ⁻² ”.

  FIG. 27 shows a light amount distribution of illumination light obtained by the pair of combination lenses shown in Tables 1 and 2. The horizontal axis indicates coordinates from the optical axis, and the vertical axis indicates the light amount ratio (%). For comparison, FIG. 26 shows a light amount distribution (Gaussian distribution) of illumination light when correction is not performed. As can be seen from FIG. 26 and FIG. 27, a light amount distribution that is substantially uniform is obtained by performing correction using the light amount distribution correcting optical system as compared with the case where correction is not performed. Thereby, it is possible to perform exposure with uniform laser light without reducing the use efficiency of light, without causing any unevenness.

――― Irradiation means ―――
The light irradiation means is not particularly limited and may be appropriately selected depending on the purpose. For example, (ultra) high pressure mercury lamp, xenon lamp, carbon arc lamp, halogen lamp, copier, fluorescent tube, LED, etc. , A known light source such as a semiconductor laser, or means capable of synthesizing and irradiating two or more lights. Among these, means capable of synthesizing and irradiating two or more lights are preferable.
The light emitted from the light irradiation means is, for example, an electromagnetic wave that passes through the support and activates the photopolymerization initiator and sensitizer used when the light is irradiated through the support. In particular, ultraviolet to visible light, electron beam, X-ray, laser beam, and the like can be mentioned. Of these, laser beam is preferable, and a laser combining two or more lights (hereinafter, referred to as “combined laser”). More preferred. Even when light irradiation is performed after the support is peeled off, the same light can be used.

As a wavelength of the ultraviolet to visible light, for example, 300 to 1500 nm is preferable, 320 to 800 nm is more preferable, and 330 nm to 650 nm is particularly preferable.
As a wavelength of the said laser beam, 200-1500 nm is preferable, for example, 300-800 nm is more preferable, 330 nm-500 nm is still more preferable, 400 nm-450 nm is especially preferable.

  Examples of means capable of irradiating the combined laser include, for example, a plurality of lasers, a multimode optical fiber, and collective optics for condensing and coupling the laser beams respectively emitted from the plurality of lasers to the multimode optical fiber. Means having a system are preferred.

  Hereinafter, means (fiber array light source) capable of irradiating the combined laser will be described with reference to the drawings.

  As shown in FIG. 28 a, the fiber array light source 66 includes a plurality of (for example, 14) laser modules 64, and one end of the multimode optical fiber 30 is coupled to each laser module 64. An optical fiber 31 having the same core diameter as that of the multimode optical fiber 30 and a smaller cladding diameter than the multimode optical fiber 30 is coupled to the other end of the multimode optical fiber 30. As shown in detail in FIG. 28b, seven end portions of the multimode optical fiber 31 opposite to the optical fiber 30 are arranged along the main scanning direction orthogonal to the sub-scanning direction, and these are arranged in two rows to form a laser. An emission unit 68 is configured.

  As shown in FIG. 28b, the laser emitting portion 68 configured by the end portion of the multimode optical fiber 31 is sandwiched and fixed between two support plates 65 having a flat surface. In addition, a transparent protective plate such as glass is preferably disposed on the light emitting end face of the multimode optical fiber 31 for protection. The light exit end face of the multimode optical fiber 31 has high light density and is likely to collect dust and easily deteriorate. However, the protective plate as described above prevents the dust from adhering to the end face and deteriorates. Can be delayed.

  In this example, in order to arrange the emission ends of the optical fibers 31 with a small cladding diameter in a line without any gaps, the multimode optical fiber 30 is placed between two adjacent multimode optical fibers 30 at a portion with a large cladding diameter. Two exit ends of the optical fiber 31 coupled to the two multimode optical fibers 30 adjacent to each other at the portion where the cladding diameter is large are the exit ends of the optical fiber 31 coupled to the stacked and stacked multimode optical fibers 30. Are arranged so as to be sandwiched between them.

  For example, as shown in FIG. 29, such an optical fiber is coaxial with an optical fiber 31 having a length of 1 to 30 cm and a small cladding diameter at the tip of the laser beam emission side of a multimode optical fiber 30 having a large cladding diameter. Can be obtained by linking them together. In the two optical fibers, the incident end face of the optical fiber 31 is fused and joined to the outgoing end face of the multimode optical fiber 30 so that the central axes of both optical fibers coincide. As described above, the diameter of the core 31 a of the optical fiber 31 is the same as the diameter of the core 30 a of the multimode optical fiber 30.

  In addition, a short optical fiber in which an optical fiber having a short cladding diameter and a large cladding diameter is fused to an optical fiber having a short cladding diameter and a large cladding diameter may be coupled to the output end of the multimode optical fiber 30 via a ferrule or an optical connector. Good. By detachably coupling using a connector or the like, the tip portion can be easily replaced when an optical fiber having a small cladding diameter is broken, and the cost required for exposure head maintenance can be reduced. Hereinafter, the optical fiber 31 may be referred to as an emission end portion of the multimode optical fiber 30.

  The multimode optical fiber 30 and the optical fiber 31 may be any of a step index type optical fiber, a graded index type optical fiber, and a composite type optical fiber. For example, a step index type optical fiber manufactured by Mitsubishi Cable Industries, Ltd. can be used. In the present embodiment, the multimode optical fiber 30 and the optical fiber 31 are step index type optical fibers, and the multimode optical fiber 30 has a cladding diameter = 125 μm, a core diameter = 25 μm, NA = 0.2, an incident end face. The transmittance of the coat is 99.5% or more, and the optical fiber 31 has a cladding diameter = 60 μm, a core diameter = 25 μm, and NA = 0.2.

  In general, in laser light in the infrared region, propagation loss increases as the cladding diameter of the optical fiber is reduced. For this reason, a suitable cladding diameter is determined according to the wavelength band of the laser beam. However, the shorter the wavelength, the smaller the propagation loss. In the case of laser light having a wavelength of 405 nm emitted from a GaN-based semiconductor laser, the cladding thickness {(cladding diameter−core diameter) / 2} is set to an infrared light having a wavelength band of 800 nm. The propagation loss hardly increases even if it is about ½ of the case of propagating infrared light and about ¼ of the case of propagating infrared light in the 1.5 μm wavelength band for communication. Therefore, the cladding diameter can be reduced to 60 μm.

  However, the clad diameter of the optical fiber 31 is not limited to 60 μm. The clad diameter of the optical fiber used in the conventional fiber array light source is 125 μm, but the depth of focus becomes deeper as the clad diameter becomes smaller. More preferably, it is 40 μm or less. On the other hand, since the core diameter needs to be at least 3 to 4 μm, the cladding diameter of the optical fiber 31 is preferably 10 μm or more.

  The laser module 64 includes a combined laser light source (fiber array light source) shown in FIG. This combined laser light source includes a plurality of (for example, seven) chip-like lateral multimode or single mode GaN-based semiconductor lasers LD1, LD2, LD3, LD4, LD5, LD6, arrayed and fixed on the heat block 10. And LD7, collimator lenses 11, 12, 13, 14, 15, 16, and 17 provided corresponding to each of the GaN-based semiconductor lasers LD1 to LD7, one condenser lens 20, and one multi-lens. Mode optical fiber 30. The number of semiconductor lasers is not limited to seven. For example, as many as 20 semiconductor laser beams can be incident on a multimode optical fiber having a cladding diameter = 60 μm, a core diameter = 50 μm, and NA = 0.2. In addition, the number of optical fibers can be further reduced.

  The GaN-based semiconductor lasers LD1 to LD7 all have the same oscillation wavelength (for example, 405 nm), and the maximum output is also all the same (for example, 100 mW for the multimode laser and 30 mW for the single mode laser). As the GaN-based semiconductor lasers LD1 to LD7, lasers having an oscillation wavelength other than the above 405 nm in a wavelength range of 350 nm to 450 nm may be used.

  As shown in FIGS. 31 and 32, the combined laser light source is housed in a box-shaped package 40 having an upper opening together with other optical elements. The package 40 includes a package lid 41 created so as to close the opening thereof. After the deaeration process, a sealing gas is introduced, and the package 40 and the package lid 41 are closed by closing the opening of the package 40 with the package lid 41. 41. The combined laser light source is hermetically sealed in a closed space (sealed space) formed by 41.

  A base plate 42 is fixed to the bottom surface of the package 40, and the heat block 10, a condensing lens holder 45 that holds the condensing lens 20, and the multimode optical fiber 30 are disposed on the top surface of the base plate 42. A fiber holder 46 that holds the incident end is attached. The exit end of the multimode optical fiber 30 is drawn out of the package from an opening formed in the wall surface of the package 40.

  Further, a collimator lens holder 44 is attached to the side surface of the heat block 10, and the collimator lenses 11 to 17 are held. An opening is formed in the lateral wall surface of the package 40, and wiring 47 for supplying a driving current to the GaN-based semiconductor lasers LD1 to LD7 is drawn out of the package through the opening.

  In FIG. 32, in order to avoid complication of the figure, only the GaN-based semiconductor laser LD7 among the plurality of GaN-based semiconductor lasers is numbered, and only the collimator lens 17 among the plurality of collimator lenses is numbered. is doing.

  FIG. 33 shows the front shape of the attachment part of the collimator lenses 11-17. Each of the collimator lenses 11 to 17 is formed in a shape obtained by cutting a region including the optical axis of a circular lens having an aspherical surface into a long and narrow plane. This elongated collimator lens can be formed, for example, by molding resin or optical glass. The collimator lenses 11 to 17 are closely arranged in the arrangement direction of the light emitting points so that the longitudinal direction is orthogonal to the arrangement direction of the light emitting points of the GaN-based semiconductor lasers LD1 to LD7 (left and right direction in FIG. 33).

  On the other hand, each of the GaN-based semiconductor lasers LD1 to LD7 includes an active layer having a light emission width of 2 μm, and each of the laser beams B1 in a state in which the divergence angles in a direction parallel to and perpendicular to the active layer are, for example A laser emitting ~ B7 is used. These GaN-based semiconductor lasers LD1 to LD7 are arranged so that the light emitting points are arranged in a line in a direction parallel to the active layer.

Therefore, in the laser beams B1 to B7 emitted from the respective light emitting points, the direction in which the divergence angle is large coincides with the longitudinal direction and the divergence angle is small with respect to the elongated collimator lenses 11 to 17 as described above. Is incident in a state that coincides with the width direction (direction orthogonal to the longitudinal direction). That is, the collimator lenses 11 to 17 have a width of 1.1 mm and a length of 4.6 mm, and the horizontal and vertical beam diameters of the laser beams B1 to B7 incident thereon are 0.9 mm and 2. 6 mm. Each of the collimator lenses 11 to 17 has a focal length f ₁ = 3 mm, NA = 0.6, and a lens arrangement pitch = 1.25 mm.

The condensing lens 20 is formed by cutting a region including the optical axis of a circular lens having an aspheric surface into a long and narrow shape in parallel planes, and is long in the arrangement direction of the collimator lenses 11 to 17, that is, in a horizontal direction and short in a direction perpendicular thereto. Is formed. This condenser lens 20 has a focal length f ₂ = 23 mm and NA = 0.2. This condensing lens 20 is also formed by molding resin or optical glass, for example.

  In addition, since the light emitting means for illuminating the DMD uses a high-intensity fiber array light source in which the output ends of the optical fibers of the combined laser light source are arranged in an array, it has a high output and a deep depth of focus. A pattern forming apparatus can be realized. Furthermore, since the output of each fiber array light source is increased, the number of fiber array light sources required to obtain a desired output is reduced, and the cost of the pattern forming apparatus can be reduced.

  Further, since the cladding diameter of the output end of the optical fiber is smaller than the cladding diameter of the incident end, the diameter of the light emitting portion is further reduced, and the brightness of the fiber array light source can be increased. Thereby, a pattern forming apparatus having a deeper depth of focus can be realized. For example, even in the case of ultra-high resolution exposure with a beam diameter of 1 μm or less and a resolution of 0.1 μm or less, a deep depth of focus can be obtained, and high-speed and high-definition exposure is possible. Therefore, it is suitable for a thin film transistor (TFT) exposure process that requires high resolution.

  The light irradiating means is not limited to a fiber array light source including a plurality of the combined laser light sources, and for example, emits laser light incident from a single semiconductor laser having one light emitting point. A fiber array light source in which fiber light sources including optical fibers are arrayed can be used.

  Further, as a light irradiation means having a plurality of light emitting points, for example, as shown in FIG. 34, a laser in which a plurality of (for example, seven) chip-shaped semiconductor lasers LD1 to LD7 are arranged on the heat block 100. An array can be used. Further, a chip-shaped multicavity laser 110 in which a plurality of (for example, five) light emitting points 110a shown in FIG. 35A is arranged in a predetermined direction is known. Since the multicavity laser 110 can arrange the light emitting points with high positional accuracy as compared with the case where the chip-shaped semiconductor lasers are arranged, it is easy to multiplex the laser beams emitted from the respective light emitting points. However, since the multi-cavity laser 110 is likely to be bent at the time of laser manufacture when the number of light emitting points increases, the number of light emitting points 110a is preferably 5 or less.

  As the light irradiation means, the multi-cavity laser 110 or a plurality of multi-cavity lasers 110 on the heat block 100 in the same direction as the arrangement direction of the light emitting points 110a of each chip as shown in FIG. An arrayed multi-cavity laser array can be used as a laser light source.

  The combined laser light source is not limited to one that combines laser beams emitted from a plurality of chip-shaped semiconductor lasers. For example, as shown in FIG. 22, a combined laser light source including a chip-shaped multicavity laser 110 having a plurality of (for example, three) light emitting points 110a can be used. This combined laser light source is configured to include a multi-cavity laser 110, one multi-mode optical fiber 130, and a condensing lens 120. The multi-cavity laser 110 can be composed of, for example, a GaN-based laser diode having an oscillation wavelength of 405 nm.

  In the above configuration, each of the laser beams B emitted from each of the plurality of light emitting points 110 a of the multicavity laser 110 is collected by the condenser lens 120 and enters the core 130 a of the multimode optical fiber 130. The laser light incident on the core 130a propagates in the optical fiber, is combined into one, and is emitted.

  A plurality of light emitting points 110 a of the multicavity laser 110 are arranged in parallel within a width substantially equal to the core diameter of the multimode optical fiber 130, and a focal point substantially equal to the core diameter of the multimode optical fiber 130 is formed as the condenser lens 120. By using a convex lens of a distance or a rod lens that collimates the outgoing beam from the multi-cavity laser 110 only in a plane perpendicular to the active layer, the coupling efficiency of the laser beam B to the multi-mode optical fiber 130 can be increased. it can.

  As shown in FIG. 36, a multi-cavity laser 110 having a plurality of (for example, three) emission points is used, and a plurality of (for example, nine) multi-cavity lasers 110 are equidistant from each other on the heat block 111. A combined laser light source including the laser array 140 arranged in (1) can be used. The plurality of multi-cavity lasers 110 are arranged and fixed in the same direction as the arrangement direction of the light emitting points 110a of each chip.

  This combined laser light source includes a laser array 140, a plurality of lens arrays 114 arranged corresponding to each multi-cavity laser 110, and a single rod arranged between the laser array 140 and the plurality of lens arrays 114. The lens 113, one multimode optical fiber 130, and a condenser lens 120 are provided. The lens array 114 includes a plurality of microlenses corresponding to the emission points of the multicavity laser 110.

  In the above configuration, each of the laser beams B emitted from each of the plurality of light emitting points 10a of the plurality of multi-cavity lasers 110 is condensed in a predetermined direction by the rod lens 113, and then each microlens of the lens array 114. It becomes parallel light. The collimated laser beam L is condensed by the condenser lens 120 and enters the core 130a of the multimode optical fiber 130. The laser light incident on the core 130a propagates in the optical fiber, is combined into one, and is emitted.

  Still another example of the combined laser light source will be described. In this combined laser light source, as shown in FIGS. 37A and 37B, a heat block 182 having an L-shaped cross section in the optical axis direction is mounted on a substantially rectangular heat block 180, and two heats are provided. A storage space is formed between the blocks. On the upper surface of the L-shaped heat block 182, a plurality of (for example, two) multi-cavity lasers 110 in which a plurality of light emitting points (for example, five) are arranged in an array form the light emitting points 110a of each chip. It is arranged and fixed at equal intervals in the same direction as the arrangement direction.

  A concave portion is formed in the substantially rectangular heat block 180, and a plurality of (for example, two) light emitting points (for example, five) are arranged in an array on the upper surface of the space side of the heat block 180. The multi-cavity laser 110 is arranged such that its emission point is located on the same vertical plane as the emission point of the laser chip arranged on the upper surface of the heat block 182.

  On the laser beam emission side of the multi-cavity laser 110, a collimator lens array 184 in which collimator lenses are arranged corresponding to the light emission points 110a of the respective chips is arranged. In the collimating lens array 184, the longitudinal direction of each collimating lens coincides with the direction in which the laser beam divergence angle is large (fast axis direction), and the width direction of each collimating lens coincides with the direction in which the divergence angle is small (slow axis direction). Are arranged to be. Thus, by collimating and integrating the collimating lenses, the space utilization efficiency of the laser light can be improved, the output of the combined laser light source can be increased, and the number of parts can be reduced and the cost can be reduced. .

  Further, on the laser light emitting side of the collimating lens array 184, there is one multimode optical fiber 130 and a condensing lens 120 that condenses and couples the laser light to the incident end of the multimode optical fiber 130. Is arranged.

  In the above configuration, each of the laser beams B emitted from each of the plurality of light emitting points 10a of the plurality of multicavity lasers 110 arranged on the laser blocks 180 and 182 is collimated by the collimating lens array 184 and condensed. The light is condensed by the lens 120 and enters the core 130 a of the multimode optical fiber 130. The laser light incident on the core 130a propagates in the optical fiber, is combined into one, and is emitted.

  As described above, the combined laser light source can achieve particularly high output by the multistage arrangement of multicavity lasers and the array of collimating lenses. By using this combined laser light source, a higher-intensity fiber array light source or bundle fiber light source can be configured, so that it is particularly suitable as a fiber light source constituting the laser light source of the pattern forming apparatus of the present invention.

  It should be noted that a laser module in which each of the combined laser light sources is housed in a casing and the emission end of the multimode optical fiber 130 is pulled out from the casing can be configured.

  In addition, the other end of the multimode optical fiber of the combined laser light source is coupled with another optical fiber having the same core diameter as the multimode optical fiber and a cladding diameter smaller than the multimode optical fiber. However, for example, a multimode optical fiber having a cladding diameter of 125 μm, 80 μm, 60 μm or the like may be used without coupling another optical fiber to the emission end.

Here, the pattern forming method of the present invention will be further described.
In each exposure head 166 of the scanner 162, laser light B1, B2, B3, B4, B5, B6 emitted in a divergent light state from each of the GaN-based semiconductor lasers LD1 to LD7 constituting the combined laser light source of the fiber array light source 66. , And B7 are collimated by corresponding collimator lenses 11-17. The collimated laser beams B <b> 1 to B <b> 7 are collected by the condenser lens 20 and converge on the incident end face of the core 30 a of the multimode optical fiber 30.

  In this example, the collimator lenses 11 to 17 and the condenser lens 20 constitute a condensing optical system, and the condensing optical system and the multimode optical fiber 30 constitute a multiplexing optical system. That is, the laser beams B1 to B7 collected as described above by the condenser lens 20 enter the core 30a of the multimode optical fiber 30 and propagate through the optical fiber to be combined with one laser beam B. The light is emitted from the optical fiber 31 coupled to the output end of the multimode optical fiber 30.

  In each laser module, when the coupling efficiency of the laser beams B1 to B7 to the multimode optical fiber 30 is 0.85 and each output of the GaN-based semiconductor lasers LD1 to LD7 is 30 mW, the light arranged in an array For each of the fibers 31, a combined laser beam B with an output of 180 mW (= 30 mW × 0.85 × 7) can be obtained. Therefore, the output from the laser emitting unit 68 in which the six optical fibers 31 are arranged in an array is about 1 W (= 180 mW × 6).

  In the laser emitting portion 68 of the fiber array light source 66, light emission points with high luminance are arranged in a line along the main scanning direction as described above. A conventional fiber light source that couples laser light from a single semiconductor laser to a single optical fiber has a low output, so that a desired output cannot be obtained unless multiple rows are arranged. Since the laser light source has a high output, a desired output can be obtained even with a small number of columns, for example, one column.

For example, in a conventional fiber light source in which a semiconductor laser and an optical fiber are coupled on a one-to-one basis, a laser having an output of about 30 mW (milliwatt) is usually used as the semiconductor laser, and the core diameter is 50 μm and the cladding diameter is 125 μm. Since a multimode optical fiber having a numerical aperture (NA) of 0.2 is used, if an output of about 1 W (watt) is to be obtained, 48 multimode optical fibers (8 × 6) must be bundled. Since the area of the light emitting region is 0.62 mm ² (0.675 mm × 0.925 mm), the luminance at the laser emitting portion 68 is 1.6 × 10 ⁶ (W / m ² ) and one optical fiber is used. The luminance per hit is 3.2 × 10 ⁶ (W / m ² ).

On the other hand, when the light irradiating means is a means capable of irradiating a combined laser, an output of about 1 W can be obtained with six multimode optical fibers, and the area of the light emitting region at the laser emitting portion 68 can be obtained. Is 0.0081 mm ² (0.325 mm × 0.025 mm), the luminance at the laser emitting portion 68 is 123 × 10 ⁶ (W / m ² ), which is about 80 times higher than the conventional luminance. be able to. Further, the luminance per optical fiber is 90 × 10 ⁶ (W / m ² ), and the luminance can be increased by about 28 times compared with the conventional one.

  Here, with reference to FIGS. 38A and 38B, the difference in depth of focus between the conventional exposure head and the exposure head of the present embodiment will be described. The diameter of the light emission region of the bundled fiber light source of the conventional exposure head in the sub-scanning direction is 0.675 mm, and the diameter of the light emission region of the fiber array light source of the exposure head in the sub-scanning direction is 0.025 mm. As shown in FIG. 38A, in the conventional exposure head, since the light emitting area of the light irradiating means (bundle-shaped fiber light source) 1 is large, the angle of the light beam incident on the DMD 3 is increased, and as a result, the scanning surface 5 is irradiated. The angle of the incident light beam increases. For this reason, the beam diameter tends to increase with respect to the light condensing direction (shift in the focus direction).

  On the other hand, as shown in FIG. 38B, in the exposure head in the pattern forming apparatus of the present invention, the diameter of the light emitting region of the fiber array light source 66 in the sub-scanning direction is small, so that it passes through the lens system 67 and enters the DMD 50. As a result, the angle of the light beam incident on the scanning surface 56 is reduced. That is, the depth of focus becomes deep. In this example, the diameter of the light emitting region in the sub-scanning direction is about 30 times that of the conventional one, and a depth of focus substantially corresponding to the diffraction limit can be obtained. Therefore, it is suitable for exposure of a minute spot. This effect on the depth of focus is more prominent and effective as the required light quantity of the exposure head is larger. In this example, the size of one pixel projected on the exposure surface is 10 μm × 10 μm. Note that DMD is a reflective spatial light modulator, but FIGS. 38A and 38B are developed views for explaining the optical relationship.

  Pattern information corresponding to the exposure pattern is input to a controller (not shown) connected to the DMD 50 and temporarily stored in a frame memory in the controller. This pattern information is data representing the density of each pixel constituting the image as binary values (whether or not dots are recorded).

  The stage 152 having the pattern forming material 150 adsorbed on the surface thereof is moved at a constant speed from the upstream side to the downstream side of the gate 160 along the guide 158 by a driving device (not shown). When the leading edge of the pattern forming material 150 is detected by the detection sensor 164 attached to the gate 160 while the stage 152 passes under the gate 160, the pattern information stored in the frame memory is sequentially read out for a plurality of lines. Then, a control signal is generated for each exposure head 166 based on the pattern information read by the data processing unit. Then, each of the micromirrors of the DMD 50 is controlled on and off for each exposure head 166 based on the generated control signal by the mirror drive control unit.

  When the DMD 50 is irradiated with laser light from the fiber array light source 66, the laser light reflected when the micromirror of the DMD 50 is in the on state is coupled onto the exposed surface 56 of the pattern forming material 150 by the lens systems 54 and 58. Imaged. In this manner, the laser light emitted from the fiber array light source 66 is turned on / off for each pixel, and the pattern forming material 150 is exposed in the number of pixel units (exposure area 168) substantially equal to the number of used pixel elements of the DMD 50. . Further, when the pattern forming material 150 is moved at a constant speed together with the stage 152, the pattern forming material 150 is sub-scanned in the direction opposite to the stage moving direction by the scanner 162, and a strip-shaped exposed region 170 is provided for each exposure head 166. Is formed.

--Other processes--
There is no restriction | limiting in particular as said other process, Although selecting suitably from the process in well-known pattern formation is mentioned, For example, a image development process, an etching process, a plating process, etc. are mentioned. These may be used alone or in combination of two or more.
The developing step exposes the photosensitive layer of the laminate formed by laminating the pattern forming material on the substrate to be processed in the exposing step, cures the exposed region of the photosensitive layer, and then removes the ineffective region. It is the process of developing by removing and forming a pattern.

  There is no restriction | limiting in particular as the removal method of the said unhardened area | region, According to the objective, it can select suitably, For example, the method etc. which remove using a developing solution are mentioned.

  There is no restriction | limiting in particular as said developing solution, According to the objective, it can select suitably, For example, alkaline aqueous solution, an aqueous developing solution, an organic solvent etc. are mentioned, Among these, weak alkaline aqueous solution is preferable. Examples of the basic component of the weak alkaline aqueous solution include lithium hydroxide, sodium hydroxide, potassium hydroxide, lithium carbonate, sodium carbonate, potassium carbonate, lithium hydrogen carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate, sodium phosphate, phosphorus Examples include potassium acid, sodium pyrophosphate, potassium pyrophosphate, and borax.

The pH of the weak alkaline aqueous solution is, for example, preferably about 8 to 12, and more preferably about 9 to 11. Examples of the weak alkaline aqueous solution include a 0.1 to 5% by mass aqueous sodium carbonate solution or an aqueous potassium carbonate solution.
The temperature of the developer can be appropriately selected according to the developability of the photosensitive layer, and is preferably about 25 ° C. to 40 ° C., for example.

  The developer includes a surfactant, an antifoaming agent, an organic base (for example, ethylenediamine, ethanolamine, tetramethylammonium hydroxide, diethylenetriamine, triethylenepentamine, morpholine, triethanolamine, etc.) and accelerates development. Therefore, it may be used in combination with an organic solvent (for example, alcohols, ketones, esters, ethers, amides, lactones, etc.). The developer may be an aqueous developer obtained by mixing water or an aqueous alkali solution and an organic solvent, or may be an organic solvent alone.

The etching step can be performed by a method appropriately selected from known etching methods.
There is no restriction | limiting in particular as an etching liquid used for the said etching process, According to the objective, it can select suitably, For example, when the said metal layer is formed with copper, a cupric chloride solution, chloride. A ferric chloride solution, an alkaline etching solution, a hydrogen peroxide-based etching solution, and the like can be given. Among these, a ferric chloride solution is preferable from the viewpoint of an etching factor.
A permanent pattern can be formed on the surface of the substrate by removing the pattern after performing the etching process in the etching step.
There is no restriction | limiting in particular as said permanent pattern, According to the objective, it can select suitably, For example, a wiring pattern etc. are mentioned suitably.

The plating step can be performed by an appropriately selected method selected from known plating processes.
Examples of the plating treatment include copper plating such as copper sulfate plating and copper pyrophosphate plating, solder plating such as high-throw solder plating, watt bath (nickel sulfate-nickel chloride) plating, nickel plating such as nickel sulfamate, and hard gold plating. And gold plating such as soft gold plating.
A permanent pattern can be formed on the surface of the substrate by removing the pattern after the plating process in the plating process, and further removing unnecessary portions by an etching process or the like as necessary.

  The pattern forming method of the present invention can form a permanent pattern with high definition and efficiency by suppressing distortion of an image formed on the pattern forming material, so that high-definition exposure is required. In particular, it can be suitably used for forming high-definition wiring patterns.

-Manufacturing method of printed wiring board-
The pattern forming method of the present invention can be suitably used for the production of a printed wiring board, particularly for the production of a printed wiring board having a hole portion such as a through hole or a via hole. Hereinafter, the manufacturing method of the printed wiring board using the pattern formation method of this invention is demonstrated.

  In particular, as a method of manufacturing a printed wiring board having a hole portion such as a through hole or a via hole, (1) the pattern forming material is placed on the printed wiring board forming substrate having the hole portion as the base, and the photosensitive layer is (2) The photosensitive layer is cured by irradiating the wiring pattern formation region and the hole portion formation region with light from the opposite side of the laminate to the substrate. (3) The support in the pattern forming material is removed from the laminate, and (4) the photosensitive layer in the laminate is developed to form a pattern by removing uncured portions in the laminate. can do.

  The removal of the support in (3) may be performed between (1) and (2) instead of between (2) and (4).

  Thereafter, in order to obtain a printed wiring board, a method of etching or plating the printed wiring board forming substrate using the formed pattern (for example, a known subtractive method or additive method (for example, a semi-additive method) And the full additive method)). Among these, in order to form a printed wiring board by industrially advantageous tenting, the subtractive method is preferable. After the treatment, the cured resin remaining on the printed wiring board forming substrate is peeled, and in the case of the semi-additive method, a desired printed wiring board can be manufactured by further etching the copper thin film portion after peeling. it can. A multilayer printed wiring board can also be manufactured in the same manner as the printed wiring board manufacturing method.

  Next, the manufacturing method of the printed wiring board which has a through hole using the said pattern formation material is further demonstrated.

  First, a printed wiring board forming substrate having through holes and having a surface covered with a metal plating layer is prepared. As the printed wiring board forming substrate, for example, a copper-clad laminate substrate and a substrate in which a copper plating layer is formed on an insulating base material such as glass-epoxy, or an interlayer insulating film is laminated on these substrates, and a copper plating layer is formed. A formed substrate (laminated substrate) can be used.

Next, when a protective film is provided on the pattern forming material, the protective film is peeled off so that the photosensitive layer in the pattern forming material is in contact with the surface of the printed wiring board forming substrate. Is used for pressure bonding (lamination process). Thereby, the laminated body which has the said board | substrate for printed wiring board formation and the said laminated body in this order is obtained.
There is no restriction | limiting in particular as lamination | stacking temperature of the said pattern formation material, For example, room temperature (15-30 degreeC) or under heating (30-180 degreeC) is mentioned, Among these, under heating (60-140 degreeC) ) Is preferred.
There is no restriction | limiting in particular as roll pressure of the said crimping | compression-bonding roll, For example, 0.1-1 Mpa is preferable.
There is no restriction | limiting in particular as the speed | rate of the said crimping | compression-bonding, and 1-3 m / min is preferable. The printed wiring board forming substrate may be preheated or laminated under reduced pressure.

  In the formation of the laminate, the pattern forming material may be laminated on the printed wiring board forming substrate, and the photosensitive resin composition solution for manufacturing the pattern forming material is used as the printed wiring board forming substrate. The photosensitive layer may be laminated on the printed wiring board forming substrate by directly applying to the surface of the substrate and drying.

  Next, the photosensitive layer is cured by irradiating light from the surface of the laminate opposite to the substrate. At this time, exposure may be performed after peeling the support as necessary (for example, when the light transmittance of the support is insufficient).

  At this point, if the support has not yet been peeled off, the support is peeled off from the laminate (support peeling step).

  Next, the uncured region of the photosensitive layer on the printed wiring board forming substrate is dissolved and removed with an appropriate developer to form a pattern of the cured layer for forming the wiring pattern and the cured layer for protecting the metal layer of the through hole. And a metal layer is exposed on the surface of the printed wiring board forming substrate (developing step).

  Moreover, you may perform the process which further accelerates | stimulates the hardening reaction of a hardening part by post-heat processing or post-exposure processing as needed after image development. The development may be a wet development method as described above or a dry development method.

  Next, the metal layer exposed on the surface of the printed wiring board forming substrate is dissolved and removed with an etching solution (etching step). Since the opening of the through hole is covered with a cured resin composition (tent film), the metal plating of the through hole is predetermined without etching liquid entering the through hole and corroding the metal plating in the through hole. It will remain in the shape. Thus, a wiring pattern is formed on the printed wiring board forming substrate.

  There is no restriction | limiting in particular as said etching liquid, According to the objective, it can select suitably, For example, when the said metal layer is formed with copper, a cupric chloride solution, a ferric chloride solution, Examples thereof include an alkaline etching solution and a hydrogen peroxide-based etching solution. Among these, a ferric chloride solution is preferable from the viewpoint of an etching factor.

Next, it removes from the said board | substrate for printed wiring board formation by making the said hardened layer into a peeling piece with strong alkaline aqueous solution etc. (hardened | cured material removal process).
There is no restriction | limiting in particular as a base component in the said strong alkali aqueous solution, For example, sodium hydroxide, potassium hydroxide, etc. are mentioned.
As pH of the said strong alkali aqueous solution, about 12-14 are preferable, for example, and about 13-14 are more preferable.
There is no restriction | limiting in particular as said strong alkali aqueous solution, For example, 1-10 mass% sodium hydroxide aqueous solution or potassium hydroxide aqueous solution etc. are mentioned.

The printed wiring board may be a multilayer printed wiring board.
The pattern forming material may be used not only for the above etching process but also for a plating process. Examples of the plating method include copper plating such as copper sulfate plating and copper pyrophosphate plating, solder plating such as high throw solder plating, watt bath (nickel sulfate-nickel chloride) plating, nickel plating such as nickel sulfamate, and hard gold plating. And gold plating such as soft gold plating.

  EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited thereto.

Example 1
[Manufacture of pattern forming materials]
-Production of support-
Polyethylene terephthalate A (hereinafter referred to as 100 ppm of amorphous silica particles having an average particle size of 1.3 μm, 200 ppm of hexamethylene bisbehenamide having an average particle size of 1.0 μm, and 10% by mass of lauryl diphenyl ether disulfonate as an antistatic agent) PET-A) and polyethylene terephthalate B (hereinafter referred to as “PET-B”) are prepared by a conventional method, and the PET-A and B are melt-extruded by a co-extrusion method, cooled and solidified to form PET. An unstretched laminated film composed of two layers of -A layer / PET-B layer was prepared. The unstretched laminated film was stretched 3.5 times in the longitudinal direction between a pair of 85 ° C. rolls having different peripheral speeds to obtain a uniaxially stretched film. Next, the film was stretched 3.5 times in the transverse direction at 98 ° C. with a tenter, and further heat-set at 200 to 210 ° C. to obtain a thickness of 16 μm (PET-A layer (thickness: 8 μm) / PET-B layer (thickness: 8 μm)). A support comprising the biaxially stretched laminated polyester film of)) was produced. Table 3 shows the conditions of the support.

  The manufactured support was measured for refractive index, surface resistance, and peel charge. The results are shown in Table 4.

<Refractive index>
As a measurement sample, a laminated polyester film (thickness: 16 μm) not containing the fine particles was manufactured, and a refractometer (manufactured by Atago Co., Ltd., Digital Upe Refractometer Type 4) was used, and measurement was performed using a sodium lamp as a light source. . The maximum refractive index in the film plane was ηγ, the refractive index in the perpendicular direction was ηβ, the refractive index in the thickness direction was ηα, and the value of the average refractive index obtained by the following formula was the refractive index n1. The results are shown in Table 3.
n1 = (ηγ + ηβ + ηα) / 3
The refractive index n2x of the amorphous silica particles having an average particle diameter of 1.3 μm and the refractive index n2y of hexamethylenebisbehenamide having an average particle diameter of 1.0 μm are measured with a refractometer (Atago Co., Ltd., Digital Upe Refractometer Type 4). It was measured. The refractive index n2x of the atypical silica particles having a large refractive index value was defined as n2, and the difference from the refractive index n1 of the laminated polyester film was determined. As a result, | n1-n2 | was 0.220.

<Surface resistance value>
The surface resistance value was stored for 6 hours under conditions of 10 ° C. and 35% relative humidity, and then PET-A (surface on which the photosensitive layer of the support was not laminated) was added to a surface resistance measuring device ( Measurement was carried out using an R8340 ultra high resistance meter (R12704 resiliency chamber) manufactured by Advantest Corporation. As a result, the surface resistance value was 7.1 × 10 ¹³ Ω / □.

<Arithmetic mean roughness (Ra)>
The arithmetic average roughness (Ra) is measured in accordance with JIS B 0601 with a cut-off of 0.08 mm and a measurement length of 10 cm for the surface of the support on which the photosensitive layer is laminated and the surface on which the photosensitive layer is not laminated. In this condition, measurement was performed using Surfcom 1400-3DF manufactured by Tokyo Seimitsu Co., Ltd.
The arithmetic average roughness (Ra) is a value obtained by the following calculation formula.
In the calculation formula, Ra represents arithmetic average roughness, f (x) represents a roughness curved surface, l represents a reference length, and l = 100 mm.

<Peeling charge amount>
The peeling charge amount is the charge amount of the peeled surface when peeled at a speed of 10 m / min after storing the support wound in a roll shape for 7 days under conditions of 23 ° C. and 10% relative humidity. It measured using the surface potentiometer (Achilles make, AS-10). As a result, the peel charge amount was 600V. When the peeling charge amount exceeds 5000 V, it causes an electrostatic failure of the apparatus, which is not preferable.

-Formation of photosensitive layer-
On the support, a photosensitive resin composition solution having the following composition was applied and dried to form a photosensitive layer having a thickness of 15 μm, thereby producing the pattern forming material.

[Composition of photosensitive resin composition solution]
Methyl methacrylate / 2-ethylhexyl acrylate / benzyl methacrylate / methacrylic acid copolymer (copolymer composition (mass ratio): 50/20/7/23, mass average molecular weight: 90,000, acid value 150) 15 7.0 parts by mass of a polymerizable monomer represented by the following structural formula (73): 1/2 part by mass of hexamethylene diisocyanate and tetraethylene oxide monomethacrylate 7.0 parts by mass: N-methylacridone 0.11 parts by mass, 2,2-bis (o-chlorophenyl) -4,4 ′, 5,5′-tetraphenylbiimidazole 2.17 parts by mass, 0.23 parts by mass of 2-mercaptobenzimidazole, malachite green Oxalate 0.02 parts by mass, leuco crystal violetlet 0.26 parts by mass, methyl ethyl ketone 40 The amount part
・ 20 parts by mass of 1-methoxy-2-propanol

However, in Structural Formula (73), m + n represents 10. Structural formula (73) is an example of a compound represented by structural formula (38).

―Preparation of laminates―
A 20 μm thick polyethylene film was laminated as the protective film on the photosensitive layer of the pattern forming material. Next, a photosensitive layer of the pattern forming material is peeled off from the surface of a copper-clad laminate (no through-hole, copper thickness 12 μm) whose surface is polished, washed and dried as the substrate. Is bonded to the copper-clad laminate using a laminator (MODEL8B-720-PH, manufactured by Taisei Laminator Co., Ltd.), and the copper-clad laminate, the photosensitive layer, and the polyethylene terephthalate film (support) Body) was laminated in this order.
The pressure bonding conditions were a pressure roll temperature of 105 ° C., a pressure roll pressure of 0.3 MPa, and a laminating speed of 1 m / min.
About the manufactured said laminated body, the total light transmittance, haze value, arithmetic mean roughness (Ra), thermal contraction rate, resolution, pattern defect, and the presence or absence of generation | occurrence | production of a winding wrinkle were evaluated. The results are shown in Tables 4 and 5.

<Total light transmittance>
The total light transmittance was measured by irradiating the support with 405 nm laser light using an apparatus incorporating an integrating sphere in a spectrophotometer (manufactured by Shimadzu Corporation, UV-2400).

<Haze value>
In the total light transmittance measurement method, parallel light transmittance was measured in the same manner as the total light transmittance measurement method except that the integrating sphere was not used. Next, the following calculation formula, diffuse light transmittance = the total light transmittance−the parallel light transmittance, is calculated, and further, the following calculation formula, haze value = the diffuse light transmittance / the total light transmittance × 100. , By calculating.

<Diffusion angle>
About the said pattern formation material, the diffusion angle was measured by the method shown in FIG. In other words, the plane of the sample 1 to be measured is placed 140 mm away from the laser oscillator 1 (ULSU405B-02 manufactured by Digital Stream Co., Ltd.) so that the plane of the sample 1 is opposed to the oscillation portion of the laser oscillator 1, and further 400 mm from the surface of the sample 1 The sensor 3 (FUJIX DIGITAL CAMERA HC-2500 3CCD manufactured by FUJIFILM Corporation) was installed at a remote position so that the light receiving surface of the sensor 3 was opposed to the sample 3.
Laser light having a wavelength of 405 nm was irradiated from the laser oscillator 1 toward the sample 2, and the parallel light beam 5 transmitted through the sample was received by the sensor 3, and the diffused light beam 4 refracted when transmitted through the sample 3 was measured. As shown in FIG. 1, the angle formed by the parallel light beam 5 and the diffused light beam 4 irradiated from the laser oscillator 1 was measured as the diffusion angle θ. Simultaneously with the measurement of the diffusion angle θ, the diffused light energy (mJ / cm ² ) was also measured by the sensor 3 at the same time. The percentage of diffused light energy B (mJ / cm ² ) with respect to irradiation light energy A (mJ / cm ² ) when the diffusion angle θ was 1.5 ° was determined. That is, it calculated | required by calculating B / Ax100.
The measurement uses a 1 mmφ slit for adjusting the light receiving area energy of the sensor, fixed at a position of 140 mm from the laser oscillator, and a CCD sensor capable of adjusting the angle at right and left at a position of 440 mm with the laser oscillator as a fulcrum. It was installed under the conditions of room temperature 23 ° C. and relative humidity 50% RH. The results are shown in Table 4.

<Friction coefficient>
The friction coefficient of the pattern forming material was determined by a gradient method (static friction) using a Static Friction Tester HEIDON-10 manufactured by HEIDON.
-Measurement method-
The sample to be measured was conditioned at room temperature 23 ° C ± 2 ° C and relative humidity 50 ± 5% RH for at least 24 hours, and then a sample of length 200mm x width 100mm was attached to the metal plate (fixed side) and slipped. A sample is stuck on a piece (length 40 mm × width 20 mm × thickness 26 mm, weight 25 gf). The sliding piece with the sample was placed on a metal plate with the sample, and the metal plate was tilted from 0 ° to read the angle (tan θ) at which the sliding piece started to move.
Data were averaged over n> 5. The results are shown in Table 4.

<Heat shrinkage>
The heat shrinkage rate is measured in accordance with JIS C2318, using a test piece having a width of 20 mm and a length of 150 mm, putting two marks at a distance of about 100 mm in the center of the test piece, and measuring the distance accurately. (This is referred to as Amm). The test piece was stored for 5 minutes in a hot air oven at 160 ± 3 ° C. under no tension, and then allowed to stand at room temperature for 30 minutes, and then the interval between the gauge points was measured (this is Bmm). Measure by calculating the rate = 100 × (A−B) / A.

<Resolution>
(1) Measuring method of shortest development time The polyethylene terephthalate film (support) is peeled off from the laminate, and a 1 mass% sodium carbonate aqueous solution at 30 ° C. is added to the entire surface of the photosensitive layer on the copper clad laminate at 0.15 MPa. Spraying was performed under pressure, and the time required from the start of spraying of the aqueous sodium carbonate solution until the photosensitive layer on the copper clad laminate was dissolved and removed was measured, and this was taken as the shortest development time.
As a result, the shortest development time was 10 seconds.

(2) Measurement of sensitivity From the polyethylene terephthalate film (support) side to the photosensitive layer of the pattern forming material in the prepared laminate, from the methylene / terephthalate film (support) side, using the pattern forming apparatus described above, 0.1 mJ / cm ² to 2 Exposure was performed by irradiating with light having different light energy amounts up to 100 mJ / cm ² at ^½ times intervals to cure a part of the photosensitive layer. After standing at room temperature for 10 minutes, the polyethylene terephthalate film (support) is peeled off from the laminate, and a 1 mass% sodium carbonate aqueous solution at 30 ° C. is sprayed on the entire surface of the photosensitive layer on the copper clad laminate. Spraying was performed at a time of .15 MPa twice as long as the shortest development time determined in (1) above, the uncured area was dissolved and removed, and the thickness of the remaining cured area was measured. Next, a sensitivity curve is obtained by plotting the relationship between the amount of light irradiation and the thickness of the cured layer. From the sensitivity curve thus obtained, the amount of light energy when the thickness of the cured region was 15 μm was determined as the amount of light energy necessary for curing the photosensitive layer.
As a result, the amount of light energy necessary for curing the photosensitive layer was 3 mJ / cm ² .

(3) Measurement of resolution The laminate was prepared by the same method and conditions as the evaluation method for the shortest development time in (1) and allowed to stand at room temperature (23 ° C., 55% RH) for 10 minutes. From the obtained polyethylene terephthalate film (support) of the laminate, exposure is performed for each line width in increments of 5 μm from line widths of 10 μm to 50 μm at a line / space = 1/1 using the pattern forming apparatus. The exposure amount at this time is the amount of light energy necessary for curing the photosensitive layer of the pattern forming material measured in (2). After standing at room temperature for 10 minutes, the polyethylene terephthalate film (support) is peeled off from the laminate. A 1 mass% sodium carbonate aqueous solution at 30 ° C. is sprayed over the entire surface of the photosensitive layer on the copper-clad laminate at a spray pressure of 0.15 MPa for twice the shortest development time determined in (1) above, and uncured areas are sprayed. Dissolve and remove. The surface of the copper-clad laminate with the cured resin pattern thus obtained was observed with an optical microscope, and the minimum line width without any abnormalities such as tsumari and twisting was measured on the cured resin pattern line. did. The smaller the numerical value, the better the resolution.

<Etching process>
Using a laminate having a pattern formed in the resolution measurement, an iron chloride etchant (ferric chloride-containing etching solution, 40 ° Baume, liquid temperature 40 ° C. is formed on the exposed copper-clad laminate in the laminate. ) Was sprayed at 0.25 MPa for 36 seconds to dissolve and remove the exposed copper layer not covered with the hardened layer. Next, the formed pattern was removed by spraying a 2% by mass aqueous sodium hydroxide solution to prepare a printed wiring board having a copper layer wiring pattern on the surface as the permanent pattern.

<Pattern defect>
The pattern surface (50 μm × 50 μm) formed in the resolution measurement was photographed with a scanning electron microscope (SEM), and the formed pattern and the shape of the wiring pattern were evaluated according to the following evaluation criteria.
-Evaluation criteria-
A: There were no defects or 1 to 5 defects, the shape of the formed pattern was not affected, and no disconnection was observed in the wiring pattern after etching.
B: Although there were 5 to 10 defects, the shape of the formed pattern was not affected, and no disconnection was observed in the wiring pattern after etching.
C: There were 11 to 20 defects, and the defects caused a shape abnormality on the end face of the pattern, and disconnection was observed in the wiring pattern after etching.
D: There were 21 abnormal defects, and the defects caused a shape abnormality on the end face of the pattern, and disconnection was observed in the wiring pattern after etching.

<Size of pattern defects>
With respect to the pattern surface (50 μm × 50 μm) formed in the measurement of the resolution, the maximum diameter and the maximum depth among the maximum 20 pattern defects were measured using a laser microscope (VK-9500, manufactured by Keyence Corporation). . Note that when the maximum depth was within ½ of the thickness (15 μm) of the photosensitive layer, no disconnection occurred in the wiring pattern formed after the etching process.

<Presence of winding wrinkles>
The photosensitive resin composition solution is applied onto the support (width 24 cm) at a speed of 9 m / min, and dried at 120 ° C. for 60 seconds to produce a pattern forming material. The pattern forming material is 3 kg / 26 cm. The presence or absence of winding wrinkles in the case of winding with the winding tension was visually observed.

(Example 2)
In Example 1, a pattern forming material was produced in the same manner as in Example 1 except that the support was replaced with a polyethylene terephthalate film produced by the following production method. Table 3 shows the conditions of the support. Using the manufactured support, the refractive index, surface resistance value, arithmetic average roughness (Ra), and peel charge amount were evaluated in the same manner as in Example 1.
Further, using the produced pattern forming material, the total light transmittance, the haze value, the diffusion angle θ, the percentage of the diffused light energy with respect to the irradiation light energy when the diffusion angle θ is 1.5 °, and the friction coefficient in the same manner as in Example 1. The thermal shrinkage rate, resolution, pattern defects, and the presence or absence of winding wrinkles were evaluated. The results are shown in Tables 4 and 5.
The shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm ² .

-Production of support-
Polyethylene terephthalate A (hereinafter referred to as “PET-A”) and polyethylene terephthalate B containing 80 ppm of atypical silica particles having an average particle diameter of 1.0 μm and 7.5% by mass of lauryl diphenyl ether disulfonate as an antistatic agent (Hereinafter referred to as “PET-B”) is prepared by a conventional method, and the PET-A and B are melt-extruded by a co-extrusion method, cooled and solidified, and consists of two layers of PET-A layer / PET-B layer. An unstretched laminated film was prepared. The unstretched laminated film was stretched 3.5 times in the longitudinal direction between a pair of 85 ° C. rolls having different peripheral speeds to obtain a uniaxially stretched film. Next, the film was stretched 3.5 times in the transverse direction at 98 ° C. with a tenter, and further heat-set at 200 to 210 ° C. to obtain a thickness of 16 μm (PET-A layer (thickness: 8 μm) / PET-B layer (thickness: 8 μm)). )) And a support was produced.

(Example 3)
In Example 1, a pattern forming material was produced in the same manner as in Example 1 except that the support was replaced with a polyethylene terephthalate film produced by the following production method. Table 3 shows the conditions of the support. Using the manufactured support, the refractive index, surface resistance value, arithmetic average roughness (Ra), and peel charge amount were evaluated in the same manner as in Example 1.
Further, using the produced pattern forming material, the total light transmittance, the haze value, the diffusion angle θ, the percentage of the diffused light energy with respect to the irradiation light energy when the diffusion angle θ is 1.5 °, and the friction coefficient in the same manner as in Example 1. The thermal shrinkage rate, resolution, pattern defects, and the presence or absence of winding wrinkles were evaluated. The results are shown in Tables 4 and 5.
The shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm ² .

-Production of support-
Polyethylene terephthalate A (hereinafter referred to as “PET-A”) containing 40 ppm of spherical silica particles having an average particle diameter of 0.1 μm, 50 ppm of calcium carbonate having an average particle diameter of 0.6 μm, and 5% by mass of lauryl diphenyl ether disulfonate as an antistatic agent. ) And polyethylene terephthalate B (hereinafter referred to as “PET-B”) are prepared by a conventional method, and the PET-A and B are melt-extruded by a co-extrusion method, cooled and solidified to obtain a PET-A layer / An unstretched laminated film consisting of two PET-B layers was prepared. The unstretched laminated film was stretched 3.5 times in the longitudinal direction between a pair of 85 ° C. rolls having different peripheral speeds to obtain a uniaxially stretched film. Subsequently, the film was stretched 3.5 times in the transverse direction at 98 ° C. with a tenter, and further heat-set at 200 to 210 ° C. to obtain a thickness of 16 μm (PET-A layer (thickness: 6 μm) / PET-B layer (thickness: 10 μm). The support body which consists of the laminated polyester film by which biaxial stretching of ()) was manufactured.

Example 4
In Example 1, a pattern forming material was produced in the same manner as in Example 1 except that the support was replaced with a polyethylene terephthalate film produced by the following production method. Table 3 shows the conditions of the support. Using the manufactured support, the refractive index, surface resistance value, arithmetic average roughness (Ra), and peel charge amount were evaluated in the same manner as in Example 1.
Further, using the produced pattern forming material, the total light transmittance, the haze value, the diffusion angle θ, the percentage of the diffused light energy with respect to the irradiation light energy when the diffusion angle θ is 1.5 °, and the friction coefficient in the same manner as in Example 1. The thermal shrinkage rate, resolution, pattern defects, and the presence or absence of winding wrinkles were evaluated. The results are shown in Tables 4 and 5.
The shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm ² .

-Production of support-
Polyethylene terephthalate containing 200 ppm of atypical silica particles having an average particle size of 1.0 μm and 2% by mass of lauryl diphenyl ether disulfonate as an antistatic agent is prepared by a conventional method, melt-extruded, cooled and solidified to form an unstretched film. Prepared. The unstretched film was stretched 3.5 times in the longitudinal direction between a pair of 85 ° C. rolls having different peripheral speeds to obtain a uniaxially stretched film. Next, the film was stretched 3.5 times in the transverse direction at 98 ° C. with a tenter, and further heat-set at 200 to 210 ° C. to produce a support made of a biaxially stretched polyester film having a thickness of 16 μm.

(Example 5)
In Example 1, a pattern forming material was produced in the same manner as in Example 1 except that the support was replaced with a polyethylene terephthalate film produced by the following production method. Table 3 shows the conditions of the support. Using the manufactured support, the refractive index, surface resistance value, arithmetic average roughness (Ra), and peel charge amount were evaluated in the same manner as in Example 1.
Further, using the produced pattern forming material, the total light transmittance, the haze value, the diffusion angle θ, the percentage of the diffused light energy with respect to the irradiation light energy when the diffusion angle θ is 1.5 °, and the friction coefficient in the same manner as in Example 1. The thermal shrinkage rate, resolution, pattern defects, and the presence or absence of winding wrinkles were evaluated. The results are shown in Tables 4 and 5.
The shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm ² .

-Production of support-
A polyethylene retephthalate containing 50 ppm of atypical silica particles having an average particle size of 0.1 μm, 100 ppm of true spherical silica having an average particle size of 0.06 μm, and 5% by mass of lauryl diphenyl ether disulfonate as an antistatic agent is prepared by a conventional method. Then, it was melt-extruded and cooled and solidified to prepare an unstretched film. The unstretched film was stretched 3.5 times in the longitudinal direction between a pair of 85 ° C. rolls having different peripheral speeds to obtain a uniaxially stretched film. Next, the film was stretched 3.5 times in the transverse direction at 98 ° C. with a tenter, and further heat-set at 200 to 210 ° C. to produce a support made of a biaxially stretched polyester film having a thickness of 16 μm.

(Example 6)
A pattern forming material was produced in the same manner as in Example 1 except that the support was replaced with a polyethylene terephthalate film (Toray 16 μm PET 16QS52). Table 3 shows the conditions of the support. Using the manufactured support, the refractive index, surface resistance value, arithmetic average roughness (Ra), and peel charge amount were evaluated in the same manner as in Example 1.
Further, using the produced pattern forming material, the total light transmittance, the haze value, the diffusion angle θ, the percentage of the diffused light energy with respect to the irradiation light energy when the diffusion angle θ is 1.5 °, and the friction coefficient in the same manner as in Example 1. The thermal shrinkage rate, resolution, pattern defects, and the presence or absence of winding wrinkles were evaluated. The results are shown in Tables 4 and 5.
The shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm ² .

(Example 7)
A pattern forming material was produced in the same manner as in Example 1 except that the support was replaced with a polyethylene terephthalate film (Toyobo 16 μm PET A1517). Table 3 shows the conditions of the support. Using the manufactured support, the refractive index, surface resistance value, arithmetic average roughness (Ra), and peel charge amount were evaluated in the same manner as in Example 1.
Further, using the produced pattern forming material, the total light transmittance, the haze value, the diffusion angle θ, the percentage of the diffused light energy with respect to the irradiation light energy when the diffusion angle θ is 1.5 °, and the friction coefficient in the same manner as in Example 1. The thermal shrinkage rate, resolution, pattern defects, and the presence or absence of winding wrinkles were evaluated. The results are shown in Tables 4 and 5.
The shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm ² .

(Example 8)
A pattern forming material was produced in the same manner as in Example 1 except that the support was replaced with a polyethylene terephthalate film (Mitsubishi Chemical Polyester Film R340G) in Example 1. Table 3 shows the conditions of the support. Using the manufactured support, the refractive index, surface resistance value, arithmetic average roughness (Ra), and peel charge amount were evaluated in the same manner as in Example 1.
Further, using the produced pattern forming material, the total light transmittance, the haze value, the diffusion angle θ, the percentage of the diffused light energy with respect to the irradiation light energy when the diffusion angle θ is 1.5 °, and the friction coefficient in the same manner as in Example 1. The thermal shrinkage rate, resolution, pattern defects, and the presence or absence of winding wrinkles were evaluated. The results are shown in Tables 4 and 5.
The shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm ² .
Example 9
In Example 1, the support was replaced with a polyethylene terephthalate film (Toray 16 μm PET 16QS52), and further a “methyl methacrylate / 2-ethylhexyl acrylate / benzyl methacrylate / methacrylic acid copolymer (copolymer) of the photosensitive resin composition solution. "Mixed composition (mass ratio): 50/20/7/23, mass average molecular weight: 90,000, acid value 150) 15 parts by mass" is "methyl methacrylate / methacrylic acid / styrene copolymer (copolymer composition ( (Mass ratio): 19/29/29/52, mass average molecular weight: 60,000, acid value 189) A pattern forming material was produced in the same manner as in Example 1 except that it was changed to 15 parts by mass. Table 3 shows the conditions of the support. Using the manufactured support, the refractive index, surface resistance value, arithmetic average roughness (Ra), and peel charge amount were evaluated in the same manner as in Example 1.
Further, using the produced pattern forming material, the total light transmittance, the haze value, the diffusion angle θ, the percentage of the diffused light energy with respect to the irradiation light energy when the diffusion angle θ is 1.5 °, and the friction coefficient in the same manner as in Example 1. The thermal shrinkage rate, resolution, pattern defects, and the presence or absence of winding wrinkles were evaluated. The results are shown in Tables 4 and 5.
The shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm ² .

(Comparative Example 1)
In Example 1, a pattern forming material was produced in the same manner as in Example 1 except that the support was replaced with a polyethylene terephthalate film produced by the following production method. Table 3 shows the conditions of the support. Using the manufactured support, the refractive index, surface resistance value, arithmetic average roughness (Ra), and peel charge amount were evaluated in the same manner as in Example 1.
Further, using the produced pattern forming material, the total light transmittance, the haze value, the diffusion angle θ, the percentage of the diffused light energy with respect to the irradiation light energy when the diffusion angle θ is 1.5 °, and the friction coefficient in the same manner as in Example 1. The thermal shrinkage rate, resolution, pattern defects, and the presence or absence of winding wrinkles were evaluated. The results are shown in Tables 4 and 5.
The shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm ² .

-Production of support-
Polyethylene terephthalate A (hereinafter referred to as “PET-A”) and polyethylene terephthalate B (hereinafter referred to as “PET-B”) containing 500 ppm of titanium oxide having an average particle diameter of 1.0 μm were prepared by a conventional method. By the extrusion method, the PET-A and B were melt-extruded and cooled and solidified to prepare an unstretched laminated film consisting of two layers of PET-A layer / PET-B layer. The unstretched laminated film was stretched 3.5 times in the longitudinal direction between a pair of 85 ° C. rolls having different peripheral speeds to obtain a uniaxially stretched film. Next, the film was stretched 3.5 times in the transverse direction at 98 ° C. with a tenter, and further heat-set at 200 to 210 ° C. to obtain a thickness of 16 μm (PET-A layer (thickness: 8 μm) / PET-B layer (thickness: 8 μm)). The support body which consists of the laminated polyester film by which biaxial stretching of ()) was manufactured.

(Comparative Example 2)
In Example 1, a pattern forming material was produced in the same manner as in Example 1 except that the support was replaced with a polyethylene terephthalate film produced by the following production method. Table 3 shows the conditions of the support. Using the manufactured support, the refractive index, surface resistance value, arithmetic average roughness (Ra), and peel charge amount were evaluated in the same manner as in Example 1.
Further, using the produced pattern forming material, the total light transmittance, the haze value, the diffusion angle θ, the percentage of the diffused light energy with respect to the irradiation light energy when the diffusion angle θ is 1.5 °, and the friction coefficient in the same manner as in Example 1. The thermal shrinkage rate, resolution, pattern defects, and the presence or absence of winding wrinkles were evaluated. The results are shown in Tables 4 and 5.
The shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm ² .

-Production of support-
A polyethylene terephthalate containing 100 ppm of zirconium oxide having an average particle size of 2.0 μm was prepared by a conventional method, melt-extruded, and cooled and solidified to prepare an unstretched film. The unstretched film was stretched 3.5 times in the longitudinal direction between a pair of 85 ° C. rolls having different peripheral speeds to obtain a uniaxially stretched film. Next, the film was stretched 3.5 times in the transverse direction at 98 ° C. with a tenter, and further heat-set at 200 to 210 ° C. to produce a support made of a biaxially stretched polyester film having a thickness of 19 μm.

(Comparative Example 3)
In Example 1, a pattern forming material was produced in the same manner as in Example 1 except that the support was replaced with a polyethylene terephthalate film produced by the following production method. Table 3 shows the conditions of the support. Using the manufactured support, the refractive index, surface resistance value, arithmetic average roughness (Ra), and peel charge amount were evaluated in the same manner as in Example 1.
Further, using the produced pattern forming material, the total light transmittance, the haze value, the diffusion angle θ, the percentage of the diffused light energy with respect to the irradiation light energy when the diffusion angle θ is 1.5 °, and the friction coefficient in the same manner as in Example 1. The thermal shrinkage rate, resolution, pattern defects, and the presence or absence of winding wrinkles were evaluated. The results are shown in Tables 4 and 5.
The shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm ² .

-Production of support-
Polyethylene terephthalate containing 200 ppm of calcium carbonate having an average particle size of 3.0 μm was prepared by a conventional method, melt-extruded, and cooled and solidified to prepare an unstretched film. The unstretched film was stretched 3.5 times in the longitudinal direction between a pair of 85 ° C. rolls having different peripheral speeds to obtain a uniaxially stretched film. Next, the film was stretched 3.5 times in the transverse direction at 98 ° C. with a tenter, and further heat-set at 200 to 210 ° C. to produce a support made of a biaxially stretched polyester film having a thickness of 16 μm.

(Comparative Example 4)
A pattern forming material was produced in the same manner as in Example 1 except that in Example 1, the support was replaced with a polyethylene terephthalate film (Teijin DuPont 20 μm PET G2-20). Table 3 shows the conditions of the support. Using the manufactured support, the refractive index, surface resistance value, arithmetic average roughness (Ra), and peel charge amount were evaluated in the same manner as in Example 1.
Further, using the produced pattern forming material, the total light transmittance, the haze value, the diffusion angle θ, the percentage of the diffused light energy with respect to the irradiation light energy when the diffusion angle θ is 1.5 °, and the friction coefficient in the same manner as in Example 1. The thermal shrinkage rate, resolution, pattern defects, and the presence or absence of winding wrinkles were evaluated. The results are shown in Tables 4 and 5.
The shortest development time was 10 seconds, and the amount of light energy required to cure the photosensitive layer was 3 mJ / cm ² .

<MD (Machine Direction) direction of friction coefficient>
The sliding direction is the MD direction shown in FIG.

  From the results of Tables 3 to 5, the pattern forming materials of Examples 1 to 9 have a total light transmittance of 88% or more and a diffusion angle within 2 degrees as compared with the pattern forming materials of Comparative Examples 1 to 4. Therefore, the diffused light energy at a diffusion angle of 1.5 degrees is within 0.5%, the optical characteristics are excellent, the resist shape is also good, and the resist width when the line / space is 20/20 μm is also within 20.4 μm. Further, it was found that the coefficient of friction is low, the conveyance property is excellent, and the support has both suitable operability and transparency, and a high-definition pattern can be obtained after development.

The pattern forming material of the present invention has at least a photosensitive layer on a support made of a synthetic resin film containing fine particles, has a total light transmittance of 80% or more at a wavelength of 405 nm, and emits light of light. diffusion angle is an angle formed between the axis and the diffused light is within 2 degrees, the diffusion angle is diffused light energy to the irradiated light energy at 1.5 degrees ^{(mJ / cm 2) (mJ} / cm 2) 1% or less, and at least one kind of refractive index of the fine particles and the refractive index of the synthetic resin film are within a certain numerical range, so that the operability of the pattern forming material is not impaired. It is possible to efficiently form a wiring pattern without any defects with high definition. Therefore, it is preferably used for various patterns, permanent patterns such as wiring patterns, color filters, pillar materials, rib materials, spacers, liquid crystal structure members such as partition walls, holograms, micromachines, and proofs. In particular, it can be suitably used for forming a high-definition wiring pattern.
Since the pattern forming apparatus and the forming method of the present invention include the pattern forming material of the present invention, formation of various patterns, formation of permanent patterns such as wiring patterns, color filters, pillar materials, rib materials, spacers, partition walls It can be suitably used for the production of liquid crystal structural members such as holograms, micromachines, and proofs, and can be particularly suitably used for forming high-definition wiring patterns.

FIG. 1 is an explanatory diagram of a method for measuring the light transmittance of a support. FIG. 2 is an example of a partially enlarged view showing a configuration of a digital micromirror device (DMD). 3A and 3B are examples of explanatory diagrams for explaining the operation of the DMD. FIGS. 4A and 4B are examples of plan views showing the arrangement of exposure beams and scanning lines in a case where the DMD is not inclined and in a case where the DMD is inclined. 5A and 5B are examples of diagrams illustrating examples of DMD usage areas. FIG. 6 is an example of a plan view for explaining an exposure method in which the pattern forming material is exposed by one scanning by the scanner. FIGS. 7A and 7B are examples of plan views for explaining an exposure method for exposing a pattern forming material by a plurality of scans by a scanner. FIG. 8 is an example of a schematic perspective view showing an appearance of an example of the pattern forming apparatus. FIG. 9 is an example of a schematic perspective view illustrating the configuration of the scanner of the pattern forming apparatus. FIG. 10A is an example of a plan view showing an exposed region formed on the pattern forming material, and FIG. 10B is an example of a diagram showing an array of exposure areas by each exposure head. FIG. 11 is an example of a perspective view showing a schematic configuration of an exposure head including a light modulation unit. FIG. 12 is an example of a sectional view in the sub-scanning direction along the optical axis showing the configuration of the exposure head shown in FIG. FIG. 13 is an example of a controller that controls DMD based on pattern information. FIG. 14A is an example of a cross-sectional view along the optical axis showing the configuration of another exposure head having a different coupling optical system, and FIG. 14B shows an object to be exposed when a microlens array or the like is not used. FIG. 14C is an example of a plan view showing a light image projected on the surface to be exposed when a microlens array or the like is used. FIG. 15 is an example of a diagram showing the distortion of the reflection surface of the micromirror constituting the DMD with contour lines. FIG. 16 is an example of a graph showing the distortion of the reflection surface of the micromirror in two diagonal directions of the mirror. FIG. 17 is an example of a front view (A) and a side view (B) of a microlens array used in the pattern forming apparatus. FIG. 18 is an example of a front view (A) and a side view (B) of a microlens constituting a microlens array. FIG. 19 is an example of a schematic diagram illustrating a condensing state by a microlens in one cross section (A) and another cross section (B). FIG. 20a is an example of a diagram showing a result of simulating the beam diameter in the vicinity of the condensing position of the microlens. FIG. 20b is an example of a diagram showing the same simulation result as in FIG. 20a at another position. FIG. 20c is an example of a diagram showing the same simulation result as in FIG. 20a for another position. FIG. 20d is an example of a diagram illustrating simulation results similar to those in FIG. 20a at different positions. FIG. 21a is an example of a diagram showing a result of simulating the beam diameter in the vicinity of the condensing position of the microlens in the conventional pattern forming method. FIG. 21 b is an example of a diagram showing the same simulation result as in FIG. 21 a for another position. FIG. 21c is an example of a diagram showing the same simulation result as in FIG. 21a at another position. FIG. 21d is an example of a diagram showing the same simulation result as in FIG. 21a at another position. FIG. 22 is an example of a plan view showing another configuration of the combined laser light source. FIG. 23 is an example of a front view (A) and an example of a side view (B) of a microlens constituting a microlens array. FIG. 24 is an example of a schematic diagram illustrating a light collection state by the microlens of FIG. 22 in one cross section (A) and another cross section (B). FIG. 25 is an example of an explanatory diagram about the concept of correction by the light amount distribution correction optical system. FIG. 26 is an example of a graph showing the light amount distribution when the light irradiation means has a Gaussian distribution and the light amount distribution is not corrected. FIG. 27 is an example of a graph showing the light amount distribution after correction by the light amount distribution correcting optical system. 28A (A) is a perspective view showing the configuration of the fiber array light source, FIG. 28A (B) is an example of a partially enlarged view of (A), and FIGS. 28A (C) and (D) are lasers. It is an example of the top view which shows the arrangement | sequence of the light emission point in an emission part. FIG. 28 b is an example of a front view showing the arrangement of light emitting points in the laser emitting section of the fiber array light source. FIG. 29 is an example of a diagram illustrating a configuration of a multimode optical fiber. FIG. 30 is an example of a plan view showing the configuration of the combined laser light source. FIG. 31 is an example of a plan view showing the configuration of the laser module. FIG. 32 is an example of a side view illustrating the configuration of the laser module illustrated in FIG. 31. FIG. 33 is a partial side view showing the configuration of the laser module shown in FIG. FIG. 34 is an example of a perspective view showing a configuration of a laser array. FIG. 35A is an example of a perspective view showing a configuration of a multi-cavity laser, and FIG. 35B is a perspective view of a multi-cavity laser array in which the multi-cavity lasers shown in FIG. It is an example. FIG. 36 is an example of a plan view showing another configuration of the combined laser light source. FIG. 37A is an example of a plan view showing another configuration of the combined laser light source, and FIG. 37B is an example of a cross-sectional view taken along the optical axis of FIG. FIGS. 38A and 38B are examples of cross-sectional views along the optical axis showing the difference between the depth of focus in the conventional exposure apparatus and the depth of focus by the pattern forming method (pattern forming apparatus) of the present invention. FIG. 39 is a perspective view showing the MD direction in which the support film is slid in the measurement of the friction coefficient.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Laser oscillator 2 Sample 3 Sensor part 4 Diffuse light 5 Parallel light 6 Support film LD1-LD7 GaN-type semiconductor laser 10 Heat block 11-17 Collimator lens 20 Condensing lens 30-31 Multimode optical fiber 44 Collimator lens holder 45 Collection Optical lens holder 46 Fiber holder 50 Digital micromirror device (DMD)
52 Lens system 53 Reflected light image (exposure beam)
54 Lens of second imaging optical system 55 Micro lens array 55a Micro lens 56 Surface to be exposed (scanning surface)
57 Lens of second imaging optical system 58 Lens of second imaging optical system 59 Aperture array 64 Laser module 66 Fiber array light source 67 Lens system 68 Laser emitting unit 69 Mirror 70 Prism 71 Condensing lens 72 Rod integrator 73 Combination lens 74 Imaging lens 100 Heat block 110 Multi cavity laser 111 Heat block 113 Rod lens 120 Condensing lens 130 Multimode optical fiber 130a Core 140 Laser array 144 Light irradiation means 150 Pattern forming material 152 Stage 155a Micro lens 156 Installation table 158 Guide 160 Gate 162 Scanner 164 Sensor 166 Exposure head 168 Exposure area 170 Exposed area 180 Heat block 184 Collimating lens Ray 302 controller 304 stage driver 454 lens system 468 exposure area 472 microlens array 474 microlens 476 aperture array 478 aperture 480 lens system

Claims (18)

  Photosensitive on a support having a total light transmittance of 80% or more in the case of irradiating light and a diffusion angle which is an angle formed by the optical axis of the irradiating light and the diffused light within 2 degrees. A pattern forming material comprising a photosensitive layer made of a resin composition.   The pattern forming material according to claim 1, wherein the wavelength of the irradiated light is 405 nm. The pattern forming material according to claim 1, wherein the diffusion light energy (mJ / cm ² ) with respect to the irradiation light energy (mJ / cm ² ) at a diffusion angle of 1.5 degrees is within 1%.   The pattern forming material according to claim 1, wherein the support is made of a polyester film containing inert particles, and the inert particles are particles having an average particle diameter of 0.01 to 2 μm.   The pattern formation material in any one of Claim 1 to 4 which laminated | stacked the photosensitive layer and the protective film on the support body in this order.   The pattern forming material according to claim 1, wherein the support is a laminate, and at least two of the plurality of types of compositions forming each layer in the laminate are different from each other.   The arithmetic average roughness (Ra) of the surface on which the photosensitive layer of the support is laminated is 0.3 or less, and the arithmetic average roughness (Ra) of the surface on which the photosensitive layer is not laminated is 0.02 to 0. The pattern forming material according to claim 1, which has a thickness of 0.5 μm. An antistatic agent is contained on at least the surface of the support on which the photosensitive layer is not laminated, and the surface resistance of the surface is 1 × 10 ¹⁸ Ω / □ or less in an environment of a temperature of 10 ° C. and a relative humidity of 35%. The pattern formation material in any one of Claim 1 to 7.   The pattern forming material according to claim 1, wherein a coefficient of friction of a surface of the support on which the photosensitive layer is not laminated is 0.3 to 1.0.   The pattern forming material according to claim 1, wherein the photosensitive layer contains a polymerizable compound, and the polymerizable compound contains a monomer having at least one of a urethane group and an aryl group.   The photosensitive layer contains a photopolymerization initiator, and the photopolymerization initiator is a halogenated hydrocarbon derivative, hexaarylbiimidazole, oxime derivative, organic peroxide, thio compound, ketone compound, aromatic onium salt, and metallocenes. The pattern forming material according to claim 1, comprising at least one selected from the group consisting of:   The pattern formation method characterized by including exposing at least the photosensitive layer in the pattern formation material in any one of Claims 1-11.   After the photosensitive layer is laminated on the substrate to be processed, the light modulation means having n picture elements for receiving and emitting the light from the light irradiation means is used to modulate the light from the light irradiation means, The pattern forming method according to claim 12, wherein exposure is performed with light passing through a microlens array in which microlenses having aspherical surfaces capable of correcting an aberration due to distortion of an exit surface in the image element portion are arranged.   The pattern formation method according to any one of claims 12 to 13, wherein the exposure is performed using a light generated by generating a control signal based on pattern information to be formed and modulated in accordance with the control signal.   The exposure is performed through a microlens array in which microlenses having aspherical surfaces capable of correcting aberrations due to distortion of the exit surface of the picture element portion in the light modulation means after the light is modulated by the light modulation means. The pattern formation method according to any one of 12 to 14.   The pattern forming method according to claim 15, wherein the aspherical surface is a toric surface.   The pattern forming method according to claim 12, wherein the photosensitive layer is developed after the exposure. The pattern forming method according to claim 12, wherein a permanent pattern is formed after the development.