JP2006093302A - Quick heat treating apparatus and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a quick heat treating apparatus wherein, even when semiconductor substrates having different reflectivities are subjected to spike anneal processing, maximum arrival temperature can be kept unchanged; temperature of the semiconductor substrate and a substrate support can be kept equal; and a temperature difference between the circumference of the contact of the semiconductor substrate with the semiconductor support and a portion other than the foregoing portion can be suppressed to be minimum. <P>SOLUTION: The quick heat treating apparatus comprises a treating chamber for heating the semiconductor substrate; a substrate support disposed in the treating chamber for supporting the semiconductor substrate; a lamp for heating the semiconductor substrate supported on the substrate support with light irradiation; a temperature sensor for measuring the temperature of the semiconductor substrate; a temperature calculator for calculating the temperature of the semiconductor substrate in accordance with the output result of a radiation light sensor; and a control unit for controlling irradiation intensity of the lamp in accordance with the temperature of the semiconductor substrate calculated by the temperature calculation part, and the control unit corrects a control parameter of the irradiation intensity of the lamp on the basis of reflectivity of a semiconductor substrate surface measured beforehand. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a rapid thermal processing apparatus that performs rapid heating of a semiconductor substrate, and a semiconductor device manufacturing method that performs rapid thermal processing of a semiconductor substrate using the rapid thermal processing apparatus.

  As one of semiconductor manufacturing apparatuses, a rapid thermal processing apparatus that performs high-speed heat treatment of a semiconductor substrate (wafer) is known. The rapid thermal processing apparatus, for example, heats a processing chamber, a substrate support portion that is disposed in the processing chamber and supports a semiconductor substrate, and irradiates light on the surface side of the semiconductor substrate supported by the substrate support portion. A lamp section that is disposed on the back side of the semiconductor substrate and reflects radiation light from the semiconductor substrate; a back surface of the semiconductor substrate that is disposed on the back side of the semiconductor substrate and the semiconductor substrate that is multiply reflected by the reflector A radiation sensor for receiving the radiation light of the substrate, a radiation sensor for directly receiving the radiation light from the back surface of the substrate, and the radiation rate (or reflection) of the substrate back surface from the output of the radiation light sensor and the output of the radiation sensor. A radiation rate calculating unit that calculates a rate). As the substrate support portion, there is one constituted by a cylindrical member attached above the reflection plate of the processing chamber and a ring-shaped member disposed on the upper end of the cylindrical member.

  In such a heat treatment apparatus, when the semiconductor substrate is supported by the supporting ring-shaped member of the substrate support portion, the back surface side of the semiconductor substrate is surrounded by the reflector, the substrate support portion, and the semiconductor substrate, and the radiation light sensor. An optically closed space is formed to detect the temperature of the semiconductor substrate.

  When performing heat treatment of a semiconductor substrate by the above heat treatment apparatus, after supporting the semiconductor substrate by the substrate support portion, the semiconductor substrate is brought to a desired target temperature by a heating lamp while monitoring the temperature of the semiconductor substrate by a radiation detection sensor. Heat.

As a prior art, in Patent Document 1, the intensity of the heating lamp is periodically changed, and the transmittance is obtained from the ratio with the transmitted light (reflected light) that fluctuates in conjunction with the intensity, and the transmittance is used. Thus, a method for separating radiation light and transmitted light from a semiconductor substrate has been proposed. Patent Document 2 proposes a method in which a large number of heating lamps are arranged so that their irradiation areas overlap, and the substrate is heated according to a preset heating sequence. Further, in Patent Document 3, in a state where the semiconductor substrate is supported by the substrate support portion, on the back surface side of the semiconductor substrate, a reflector disposed at the top of the chamber bottom so as to face the semiconductor substrate back surface; An optical closed space surrounded by the substrate support portion and the back surface of the semiconductor substrate is formed, and the temperature of the semiconductor substrate is controlled by a radiation light sensor that receives radiation light from the back surface of the semiconductor substrate installed in the optical closed space. A method of measuring and a method of heating the semiconductor substrate to a desired temperature by controlling the irradiation intensity of the heating lamp based on the measured temperature have been proposed.
US Pat. No. 5,154,512 US Pat. No. 5,155,336 US Pat. No. 5,660,472

  FIG. 13 is a flowchart for explaining a conventional rapid thermal processing method using the rapid thermal processing apparatus. In the rapid thermal processing method of FIG. 13, first, the rapid thermal processing apparatus monitors (monitors) the temperature (Twafer) of the semiconductor substrate using a radiation light sensor (S1).

  Next, the rapid thermal processing apparatus calculates the lamp power (irradiation intensity) of the lamp unit for heating the semiconductor substrate according to the difference between the temperature (Twafer) of the semiconductor substrate and the set temperature (Tset) (S2).

  Next, the rapid thermal processing apparatus controls the lamp power of the lamp unit for heating the semiconductor substrate according to the calculated lamp power (S3). When step S3 ends, the process returns to step S1. That is, while monitoring the temperature of the semiconductor substrate by the radiation light sensor in real time, feedback control of the lamp power is executed in real time according to the well-known PID control, and the semiconductor substrate is brought to a desired target temperature (Tset) by the heating lamp. Heat.

  Here, PID control is a well-known temperature control technique, and the difference between the target value and the measured value is controlled by a control amount (here, P (proportional), I (integral), and D (differential)). , Voltage applied to the lamp).

  In a conventional rapid thermal processing apparatus, when performing so-called spike annealing, which raises or lowers the temperature of a semiconductor substrate in a short time, if the reflectivity of the semiconductor substrate is different, the response of the temperature of the semiconductor substrate to lamp power (irradiation intensity) Therefore, if the lamp power control unit having a certain PID parameter feeds back the temperature of the semiconductor substrate to control the lamp power, the temperature of the semiconductor substrate deviates from the desired target temperature.

  In addition, the substrate support portion that holds the semiconductor substrate is made of a material that is more heat resistant than the semiconductor substrate, and the reflectance and heat capacity (specific heat, film thickness) are different from the semiconductor substrate. Even if the lamp light is irradiated with the same lamp power, the same temperature is not obtained.

In general, the substrate support is formed of SiC or the like and has a larger heat capacity than the semiconductor substrate. Therefore, even if the semiconductor substrate and the substrate support are irradiated with lamp light at the same lamp power, the temperature of the substrate support is higher than that of the semiconductor substrate. Lower. Therefore, the temperature of the substrate support unit is made closer to the temperature of the semiconductor substrate by increasing the irradiation intensity of the lamp to the substrate support unit than the irradiation intensity of the semiconductor substrate.
However, in the semiconductor manufacturing process, various films are formed on the surface of the semiconductor substrate and patterns are formed. Therefore, the reflectivity of the substrate surface varies greatly during the semiconductor manufacturing process. Even if the balance of irradiation intensity of the semiconductor substrate heating lamp and the substrate support heating lamp is optimized so that the temperature of the semiconductor substrate and the substrate support is the same in a semiconductor substrate with a certain reflectance, When attempting to spike anneal a semiconductor substrate with different reflectivity, the temperature difference between the semiconductor substrate and the substrate support becomes large because the response of the temperature of the semiconductor substrate to the lamp power is different from that at the time of optimization. A temperature difference occurs between the peripheral portion of the semiconductor substrate that is in contact with the substrate support portion and the central portion of the wafer.

  The present invention has been made in view of the above points, and in a rapid thermal processing apparatus and a method for manufacturing a semiconductor device, even if spike annealing is performed on a semiconductor substrate having different reflectivity, the maximum ultimate temperature is kept constant, and the semiconductor An object of the present invention is to realize that the temperature of the substrate and the substrate support portion are kept equal, and the temperature difference between the periphery of the contact portion of the semiconductor substrate with the substrate support portion and the other portions is minimized.

  In order to solve the above-described problems, a rapid thermal processing apparatus according to the present invention includes a processing chamber for heating a semiconductor substrate, a substrate support portion disposed in the processing chamber for supporting the substrate, and supported by the substrate support portion. A lamp unit that irradiates and heats the substrate; a temperature sensor that measures the temperature of the substrate; a temperature calculation unit that calculates a temperature of the substrate according to an output result of the temperature sensor; and the temperature calculation unit. A rapid thermal processing apparatus including a control unit that controls irradiation intensity of the lamp unit according to the temperature of the substrate calculated by the control unit, wherein the control unit is based on the reflectance of the substrate surface measured in advance. The control parameter of the irradiation intensity of the lamp unit is corrected.

  In order to solve the above-described problems, a rapid thermal processing apparatus according to the present invention includes a processing chamber for heating a semiconductor substrate, a substrate support portion disposed in the processing chamber for supporting the substrate, and supported by the substrate support portion. According to the output result of the radiation light sensor, a lamp unit that irradiates and heats the front surface side of the substrate, a radiation light sensor that is disposed on the back surface side of the substrate and receives radiation light from the substrate, and A rapid thermal processing apparatus comprising: a temperature calculation unit that calculates a temperature of the substrate; and a control unit that controls irradiation intensity of the lamp unit according to the temperature of the substrate calculated by the temperature calculation unit, wherein the control The unit corrects the control parameter of the irradiation intensity of the lamp unit based on the reflectance of the substrate surface measured in advance.

  In order to solve the above-described problems, a rapid thermal processing apparatus according to the present invention includes a processing chamber for heating a semiconductor substrate, a substrate support portion disposed in the processing chamber for supporting the substrate, and supported by the substrate support portion. Further, a substrate lamp unit that irradiates and heats the surface side of the substrate, a support lamp unit that irradiates and heats the substrate support unit, and a rear surface side of the substrate that is disposed on the back side of the substrate. A reflection plate that reflects the radiation light of the substrate, a plurality of radiation light sensors that are disposed on the back surface side of the substrate and receive radiation light from the substrate back surface and the substrate back surface that is multiple-reflected by the reflection plate, and the substrate back surface A radiation rate sensor that directly receives radiation from the radiation sensor, a radiation rate calculation unit that calculates a radiation rate of the back surface of the substrate from outputs of the plurality of radiation light sensors and an output of the radiation rate sensor, and the radiation sensor and radiation Output result of rate calculation unit And a controller that controls the irradiation intensity of the lamp part for the substrate and the lamp part for the support part according to the temperature calculated by the temperature calculation part. The control unit controls the irradiation intensity of the lamp unit for the substrate according to the temperature of the substrate calculated by the temperature calculation unit, and sets the temperature of the substrate support unit calculated by the temperature calculation unit. Accordingly, the irradiation intensity of the lamp part for the support part is controlled, and the control parameter of the irradiation intensity of the lamp part for the substrate and the lamp part for the support part is set based on the reflectance of the substrate surface measured in advance. Each is corrected.

  In order to solve the above-described problems, a rapid thermal processing apparatus according to the present invention includes a processing chamber for heating a semiconductor substrate, a substrate support portion disposed in the processing chamber for supporting the substrate, and supported by the substrate support portion. Further, a substrate lamp unit that irradiates and heats the surface side of the substrate, a support lamp unit that irradiates and heats the substrate support unit, and a rear surface side of the substrate that is disposed on the back side of the substrate. A reflection plate that reflects the radiation light of the substrate, a plurality of radiation light sensors that are disposed on the back surface side of the substrate and receive radiation light from the substrate back surface and the substrate back surface that is multiple-reflected by the reflection plate, and the substrate back surface A radiation rate sensor that directly receives radiation light from the substrate, a radiation rate calculation unit that calculates a radiation rate of the back surface of the substrate from outputs of the plurality of radiation light sensors and the output of the radiation rate sensor, and Direct reception of radiation The temperature of the substrate is calculated according to the output results of the support portion radiation light sensor, the radiation light sensor and the radiation rate calculation portion, and the substrate support portion according to the output result of the support portion radiation light sensor. A rapid thermal processing apparatus comprising: a temperature calculation unit that calculates a temperature; and a control unit that controls irradiation intensity of the lamp unit for the substrate and the lamp unit for the support unit according to the temperature calculated by the temperature calculation unit. The control unit controls the irradiation intensity of the substrate lamp unit according to the temperature of the substrate calculated by the temperature calculation unit, and according to the temperature of the substrate support unit calculated by the temperature calculation unit. Control the irradiation intensity of the lamp section for the support section, and compensate the control parameters for the irradiation intensity of the lamp section for the substrate and the lamp section for the support section based on the reflectance of the substrate surface measured in advance. Characterized in that it.

  In order to solve the above-described problems, a method of manufacturing a semiconductor device according to the present invention includes a processing chamber for heating a semiconductor substrate, a substrate support portion disposed in the processing chamber for supporting the substrate, and the substrate support portion. A lamp unit that irradiates and heats the front side of the substrate that is supported, a radiation sensor that is disposed on the back side of the substrate and receives radiation from the substrate, and an output result of the radiation sensor. Using a rapid thermal processing apparatus comprising: a temperature calculation unit that calculates the temperature of the substrate according to the control unit; and a control unit that controls the irradiation intensity of the lamp unit according to the temperature of the substrate calculated by the temperature calculation unit. A method of manufacturing a semiconductor device that performs rapid thermal processing of a substrate, comprising a procedure for correcting a control parameter of irradiation intensity of the lamp unit based on a reflectance of the substrate surface measured in advance. To.

  In order to solve the above-described problems, a method of manufacturing a semiconductor device according to the present invention includes a processing chamber for heating a semiconductor substrate, a substrate support portion disposed in the processing chamber for supporting the substrate, and the substrate support portion. A substrate lamp unit for irradiating and heating the surface side of the supported substrate, a support unit lamp unit for irradiating and heating the substrate support unit, and the substrate disposed on the back side of the substrate A reflection plate that reflects radiation light from the back surface, a plurality of radiation light sensors that are disposed on the back surface side of the substrate and receive radiation light from the substrate back surface and the substrate back surface that is multiple-reflected by the reflection plate, and A radiation rate sensor that directly receives radiation light from the back surface of the substrate, a radiation rate calculation unit that calculates a radiation rate of the back surface of the substrate from outputs of the plurality of radiation light sensors and outputs of the radiation rate sensors, and the substrate support unit Direct radiation from The support portion radiation light sensor, the substrate temperature is calculated according to the output result of the support portion radiation light sensor, and the substrate temperature is calculated according to the output result of the radiation light sensor and the radiation rate calculation portion. A rapid thermal processing apparatus comprising: a temperature calculation unit that calculates a temperature of the unit; and a control unit that controls irradiation intensity of the lamp unit for the substrate and the lamp unit for the support unit according to the temperature calculated by the temperature calculation unit A method of manufacturing a semiconductor device using the substrate for rapid thermal processing, wherein the control unit controls the irradiation intensity of the substrate lamp unit according to the temperature of the substrate calculated by the temperature calculation unit And the procedure for controlling the irradiation intensity of the lamp unit for the support unit according to the calculated temperature of the substrate support unit, and based on the reflectance of the substrate surface measured in advance, the lamp unit for the substrate and the support And having a procedure for correcting the control parameter of the irradiation intensity of use the lamp unit, respectively.

  As described above, according to the present invention, the reflectance of the semiconductor substrate is measured in advance or inside the processing chamber, and based on the measured reflectance, the irradiation intensity of the substrate heating lamp unit and the support unit heating lamp unit is measured. By correcting the control of the semiconductor substrate, even if spike annealing is performed on semiconductor substrates with different reflectivities, the maximum temperature is kept constant, the temperatures of the semiconductor substrate and the substrate support are kept equal, and the periphery of the contact point with the substrate support is And the temperature difference between other locations can be suppressed.

  Embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a cross-sectional view showing a configuration of a rapid thermal processing apparatus according to an embodiment of the present invention.

The rapid thermal processing apparatus shown in FIG. 1 is an apparatus that performs rapid thermal processing while controlling the temperature of the semiconductor substrate 1. The rapid thermal processing apparatus includes a processing chamber 2, and a substrate support portion 3 that supports the semiconductor substrate 1 is disposed in the processing chamber 2.
The substrate support portion 3 includes a cylindrical cylinder 31 that is rotatably disposed on the chamber bottom portion 4 via a bearing portion 7, and a ring plate 32 that is provided at the upper end of the cylindrical cylinder. A step for supporting the edge portion of the semiconductor substrate 1 is formed in the inner peripheral edge portion of 32.
In a state where the semiconductor substrate 1 is supported by the ring plate 32 of the substrate support portion 3, the reflection plate 8 disposed on the back surface side of the semiconductor substrate 1 at the top of the chamber bottom portion 4 so as to face the back surface of the semiconductor substrate. Then, an optically closed space surrounded by the substrate support portion 3 and the semiconductor substrate 1 is formed. The optically closed space is an optically closed space provided for detecting the temperature of the semiconductor substrate 1 by a radiation light sensor that receives radiation light from the back surface of the semiconductor substrate 1.

Above the processing chamber 2, a lamp group 51 composed of a plurality of heating lamps (51 a, 51 b, 51 c, 51 d, 51 e) for heating the semiconductor substrate 1 supported by the substrate support 3, and the substrate support 3 A supporting portion heating lamp group 52 including a plurality of lamps for heating the lamp is disposed.
Here, in the rapid thermal processing apparatus of the above embodiment, the heating lamp groups 51 and 52 of the lamp irradiation method from one side (front side) of the semiconductor substrate are used, but the heating method of the semiconductor substrate according to the present invention is this implementation. It is not limited to the form, and a method of irradiating lamps from both surfaces (front surface side and back surface side) of the semiconductor substrate is also applicable.

  The chamber bottom 4 is also provided with a plurality of radiation light sensors (61a, 61b, 61c, 61d, 61e) that receive radiation light from the back surface of the semiconductor substrate 1 and the back surface of the semiconductor substrate 1 that has been multiple-reflected by the reflector 8. A radiation light sensor group 61, a radiation rate sensor 61 a ′ that directly receives radiation light from the back surface of the semiconductor substrate 1, and a substrate support portion radiation light sensor 62 that receives radiation light from the substrate support portion 3. It is installed. The radiation light sensor group 61 is disposed at a position corresponding to a different radial position of the semiconductor substrate 1, and outputs a measurement result (sensor output signal) of each radiation light sensor to the temperature calculation unit 9. The emissivity sensor 61 a ′ and the radiant light sensor 61 a output the measurement result (sensor output signal) to the emissivity calculation unit 13.

  Here, in the rapid thermal processing apparatus of the above-described embodiment, a radiation light sensor or a radiation rate sensor (pyrometer or the like) of a method for measuring temperature based on radiation light from the substrate is used. The measurement method is not limited to this embodiment, and the substrate temperature can be measured using a temperature sensor using a thermocouple or the like.

  The emissivity calculation unit 13 monitors the output signals from the emissivity sensor 61 a ′ and the radiation light sensor 61 a to calculate the emissivity of the back surface of the semiconductor substrate 1.

  The temperature calculation unit 9 monitors the output signal from each radiation light sensor of the radiation light sensor group 61, and the radiation light from the back surface of the semiconductor substrate 1 received by each radiation light sensor and the radiation rate calculation unit 13 calculate. Based on the emissivity of the back surface of the semiconductor substrate 1, the substrate temperature of the semiconductor substrate 1 is calculated. The temperature calculation unit 9 monitors the output signal from the substrate support unit radiation light sensor 62, and based on the radiation light from the substrate support unit 3 received by the substrate support unit radiation light sensor 62, the substrate support unit The temperature of 3 is calculated.

The lamp power control unit 10 controls the irradiation intensity of each heating lamp of the lamp group 51 disposed above the semiconductor substrate 1 based on the temperature of the semiconductor substrate 1 calculated by the temperature calculation unit 9. The lamp power control unit 10 controls the irradiation intensity of each lamp of the support unit heating lamp group 52 based on the temperature of the substrate support unit 3 calculated by the temperature calculation unit 9.
In order to solve the above-described problems of the conventional rapid thermal processing apparatus, the lamp power control unit 10 in the rapid thermal processing apparatus of the present invention uses the irradiation intensity of the substrate lamp group 51 according to the substrate temperature calculated by the temperature calculation unit 9. And controlling the irradiation intensity of the supporting unit lamp group 52 according to the temperature of the substrate supporting unit 3 calculated by the temperature calculating unit 9, and based on the reflectance of the semiconductor substrate surface measured in advance, The irradiation intensities of the substrate lamp group 51 and the support lamp group 52 are respectively corrected.

  Hereinafter, the function and operation of the lamp power control unit 10 in the rapid thermal processing apparatus of the present invention will be specifically described with reference to FIGS.

FIG. 2 shows the temperature of a semiconductor substrate when a so-called spike annealing process is performed for three types of semiconductor substrates having different reflectivities on the side irradiated with lamp light in a conventional rapid thermal processing apparatus, which raises and lowers the temperature at high speed in a short time. Time transition, so-called temperature profile is shown.
Here, for each of the three types of semiconductor substrates (low reflectance substrate, silicon substrate, high reflectance substrate), the average reflectance R (sheet) of the entire surface of the semiconductor substrate having a wavelength in the near infrared region (λ = 0.93 μm). (Which has a correlation with the resistance Rsh) is measured in advance outside the processing chamber 2 before the spike annealing process. In the example of FIG. 2, the reflectivity R of the low reflectivity substrate was 0.10, the reflectivity R of the silicon substrate was 0.30, and the reflectivity R of the high reflectivity substrate was 0.49. From the temperature profile of FIG. 2, it can be seen that the higher the reflectivity of the semiconductor substrate, the greater the overshoot of the temperature profile when spike annealing is performed.
FIG. 3 is a diagram for explaining the correlation between the highest temperature achieved by spike annealing in a conventional rapid thermal processing apparatus and the substrate reflectivity.

  FIG. 3A shows three types of films in which different films are formed on the lamp irradiation side surface of the semiconductor substrate to have different reflectivities, and p-type dopants are ion-implanted on the surface opposite to the lamp irradiation side. The reflectivity of the lamp irradiation side surface when an n-type semiconductor substrate (low reflectivity substrate, silicon substrate, high reflectivity substrate) is spike-annealed and the average sheet in the plane of the p-type diffusion layer after the spike anneal The relationship with resistance (Rsh) is shown. The sheet resistance value can be converted to the highest temperature achieved by spike annealing or the thermal budget of spike annealing by obtaining temperature sensitivity in advance.

As shown in FIG. 3B, the relationship between the reflectance on the lamp irradiation side surface and the highest temperature reached by the spike annealing treatment can be expressed by a simple function. By using this function, the control of the lamp power of the lamp for heating the semiconductor substrate and the lamp for heating the substrate support portion is corrected according to the measurement result of the reflectivity of the surface of the semiconductor substrate on the lamp irradiation side. Regardless of the rate, a constant thermal budget or a constant maximum temperature can be obtained.
More specifically, a low reflectivity substrate with a reflectivity of 0.10 can be expected to have a maximum temperature of 1.5 ° C lower than a silicon substrate with a reflectivity of 0.30. At the time of feedback, by raising the target temperature by 1.5 ° C., the highest temperature can be brought close to a silicon substrate having a reflectance of 0.30. In addition, with a high reflectivity substrate with a reflectivity of 0.49, the maximum ultimate temperature can be expected to be 1.3 ° C higher than that of a silicon substrate with a reflectivity of 0.30. At the time of feedback, by reducing the target temperature by 1.3 ° C., the maximum temperature can be brought close to a silicon substrate having a reflectance of 0.30.
As can be easily understood from FIG. 3, the lamp power control unit 10 in the rapid thermal processing apparatus of the present embodiment is based on the reflectance of the semiconductor substrate surface measured in advance, and the substrate lamp group 51 and the support unit lamp group. By correcting each of the irradiation intensities 52, the maximum temperature reached can be kept constant even when spike annealing is performed on semiconductor substrates having different reflectivities.

The reflectance on the lamp light irradiation side of the semiconductor substrate may be measured either inside or outside the processing chamber, but is measured before the semiconductor substrate to be annealed reaches the maximum temperature of the annealing process. There is a need.
It is desirable to select a wavelength for measuring the reflectance that is longer than the lower limit of the emission wavelength of the lamp light and shorter than the absorption edge of the substrate to be heated. A single-wavelength reflectance may be used, but a tungsten-halogen lamp generally used in rapid thermal processing equipment is white light, and is absorbed by the substrate to be heated from the lower limit of the emission wavelength of the tungsten-halogen lamp. The ratio of the energy of the lamp light reflected on the surface of the heated substrate to the energy of the lamp light incident on the heated substrate, obtained from the emission spectrum of the lamp light and the reflection spectrum of the heated substrate in the entire wavelength region up to the edge. By using this, correction with higher accuracy becomes possible.
In the semiconductor manufacturing process, various films are formed on the surface of the semiconductor substrate and patterns are formed. Therefore, microscopically, various reflectances exist within the surface of the semiconductor substrate.
If the measurement area of the reflectance is too small, the measurement area is likely to be affected by the variation in the reflectance in the substrate. Therefore, it is desirable that the measurement area is relatively large. For example, it is desirable to use an average reflectance of a region larger than the size of a semiconductor chip made on a semiconductor substrate.
As a method for measuring the reflectance of a semiconductor substrate in a processing chamber, as disclosed in Patent Document 1, periodic minute fluctuations are given to the emission intensity of a heating lamp, and reflected light and radiation from the semiconductor substrate are reflected. You may employ | adopt the method (refer FIG. 4) which calculates the reflectance of a semiconductor substrate by extracting the component interlock | cooperated with the fluctuation | variation of lamp light from the light which mixed light.
FIG. 4 is a diagram for explaining a method for measuring the reflectance of a semiconductor substrate in the conventional heat treatment method disclosed in Patent Document 1. In FIG. FIG. 4A shows a configuration of a measuring apparatus for measuring the reflectance of the semiconductor substrate. FIG. 4B shows the waveform of the output signal of the light detection sensor when the irradiation intensity of the heating lamp is periodically changed.

  According to the measurement method of FIG. 4, the reflectance (or transmittance) of the semiconductor substrate is the difference between the maximum value and the minimum value of the irradiation intensity of the heating lamp and the maximum of the transmitted light (reflected light) that fluctuates accordingly. It is known to obtain from the ratio of the difference between the value and the minimum value.

In addition, in the spike annealing process, a step of holding the temperature of the semiconductor substrate at a temperature lower than the desired temperature for a certain period of time is provided, and the in-plane temperature of the semiconductor substrate is made uniform, and then the temperature is raised and lowered at a high speed. In-plane temperature uniformity is generally improved, but the lamp power value required to maintain a temperature lower than the desired temperature is simply related to the reflectivity of the semiconductor substrate. It is also possible to use a lamp power value for maintaining the low temperature instead of the rate.
FIG. 5 is a diagram for explaining the relationship between the lamp power necessary for maintaining the semiconductor substrate temperature at 550 ° C. and the reflectance of the semiconductor substrate in the conventional rapid thermal processing apparatus. FIG. 6 is a diagram for explaining the correlation between the lamp power necessary for maintaining the substrate temperature at 550 ° C. in the conventional rapid thermal processing apparatus and the highest temperature achieved in the spike annealing process.

In the example of FIG. 5, for each of three types of semiconductor substrates having different reflectivities (low reflectivity substrate, silicon substrate, and high reflectivity substrate), when the semiconductor substrate is heated to 1050 ° C., the semiconductor substrate is at the highest temperature reached. Before heating to 1050 ° C, shows the temporal transition of the substrate temperature and lamp power when a step of holding at 550 ° C lower than the maximum temperature for 20 seconds is provided, and the lamp power required to hold at 550 ° C. Has been. As can be easily understood from FIG. 5, it can be seen that the lower the reflectivity of the semiconductor substrate, the lower the lamp power required to keep the temperature of the semiconductor substrate at 550 ° C.
As is apparent from FIG. 6, the temperature of the semiconductor substrate is maintained at 550 ° C. by using the same method as the above method for obtaining the relationship between the reflectivity of the surface of the semiconductor substrate on the lamp irradiation side and the maximum temperature at which spike annealing is performed. It is possible to express the relationship between the lamp power necessary for the above and the maximum temperature achieved by the spike annealing process by a simple correlation function.

The lamp power control unit 10 in the rapid thermal processing apparatus of the present embodiment uses the correlation function to support the substrate heating lamp group 51 and the support in accordance with the lamp irradiation intensity value necessary to hold the semiconductor substrate at 550 ° C. By correcting the lamp power control of the partial heating lamp group 52, a constant spike annealing thermal budget or a constant maximum temperature can be obtained regardless of the reflectance of the semiconductor substrate.
FIG. 7 is a diagram for explaining the substrate reflectance dependency of the in-plane temperature distribution of the semiconductor substrate in the conventional rapid thermal processing apparatus.

  FIG. 7A shows two types of films in which different films are formed on the lamp irradiation side surface of the semiconductor substrate and have different reflectivities, and p-type dopants are ion-implanted on the surface opposite to the lamp irradiation side. After each n-type semiconductor substrate (low reflectance substrate, silicon substrate) is spike annealed with a conventional rapid thermal processing apparatus, the sheet resistance of the p-type diffusion layer is determined by the sheet resistance value and the highest temperature reached by the spike anneal process. This shows the distribution in the diameter direction of the maximum temperature achieved, converted from the above relationship. FIG. 7B shows the surface reflectance of two types of semiconductor substrates (low reflectance substrate, silicon substrate), and FIG. 7C shows the respective two types of semiconductor substrates (low reflectance substrate, silicon substrate). The maximum lamp power and the difference between the heating lamps of the substrate heating lamp group 51 and the substrate support portion lamp 52 are shown.

When the semiconductor substrate is rotated about the center of the substrate during rapid thermal processing and the heating lamp groups are arranged concentrically, the temperature distribution in the rotational direction of the semiconductor substrate is relatively small, and the diameter direction Temperature distribution appears. As can be seen from FIG. 7, the lamp power balance between the substrate heating lamp group 51 and the substrate support portion heating lamp group 52 was optimized using a silicon substrate (reflectance: 0.30) on which no film was formed on the lamp irradiation side surface. In this state, when a low reflectance substrate having a reflectance of 0.10 having a nitride film formed on the lamp irradiation side surface is rapidly heat-treated, the temperature around the semiconductor substrate is lowered by 10 ° C. or more.
FIG. 8 is a partially enlarged sectional view of the vicinity of a semiconductor substrate support portion of a conventional rapid thermal processing apparatus. In FIG. 8, reference numeral 111 denotes radiation light from the back surface of the semiconductor substrate 1, 121 d denotes irradiation light from the substrate heating lamp 51 d, and 122 denotes irradiation light from the substrate support portion heating lamp 52. The irradiation light 122 of the substrate support portion heating lamp 52 is applied not only to the substrate support portion but also to the periphery of the semiconductor substrate.

  The substrate support 3 that holds the semiconductor substrate 1 is made of a material that is more heat resistant than the semiconductor substrate 1 and has a reflectance and heat capacity (specific heat, film thickness) different from that of the semiconductor substrate 1. Even if the substrate support part 3 is irradiated with the lamp light with the same lamp power, the temperature does not become the same.

In general, the substrate support portion 3 is formed of SiC or the like and has a larger heat capacity than the semiconductor substrate. Therefore, even if the semiconductor substrate 1 and the substrate support portion 3 are irradiated with lamp light with the same lamp power, the temperature of the substrate support portion 3 is increased. Becomes lower than that of the semiconductor substrate 1.
Therefore, the temperature of the substrate support portion is brought closer to the temperature of the semiconductor substrate by increasing the irradiation intensity of the substrate support portion heating lamp 52 than the irradiation intensity of the semiconductor substrate heating lamp 51d. Normally, the balance of the irradiation intensity of the substrate support portion heating lamp 52 and the semiconductor substrate heating lamp 51d is optimized by using a silicon substrate (reflectance: 0.30) on which no film is formed on the lamp irradiation side. For example, when a low-reflectance substrate with a reflectance of 0.10 having a nitride film formed on the side irradiated with the lamp light is heat-treated, the efficiency of the lamp light being absorbed by the semiconductor substrate is reduced due to the reduced reflectance of the substrate. With the same lamp power, the temperature of the low-reflectance substrate rises compared to a silicon substrate on which nothing is deposited. Therefore, the output of a sensor that monitors the temperature of the semiconductor substrate is fed back to provide a substrate heating lamp 51d. The irradiation intensity is reduced.
Since the balance between the irradiation intensities of the substrate supporting part heating lamp 52 and the substrate heating lamp 51d is fixed, the irradiation intensity of the substrate supporting part heating lamp 52 is lowered together with the irradiation intensity of the substrate heating lamp 51d. Since the reflectance of the part is constant, the temperature of the substrate support part 3 is lower than that of the semiconductor substrate 1 and the temperature of the peripheral part of the semiconductor substrate 1 in contact with the substrate support part 3 is also lowered. Therefore, in order to keep the in-plane temperature difference of the semiconductor substrate 1 to a minimum regardless of the reflectivity of the semiconductor substrate 1, the substrate heating lamp 51 d and the substrate support portion heating lamp 52 depend on the reflectivity of the semiconductor substrate. It is necessary to adjust the balance of irradiation intensity.
When improving the in-plane temperature difference of a low-reflectance substrate with a reflectivity of 0.10 with a nitride film formed on the lamp-irradiation side, the support has been lowered due to the irradiation intensity of the substrate heating lamp Adjustment may be made in the direction of increasing the irradiation intensity of the heating lamp.
However, as shown in FIG. 8, when the lamp light of the substrate support portion heating lamp 52 is also irradiated to the peripheral portion of the semiconductor substrate, the substrate support portion is simply increased by increasing the irradiation intensity of the substrate support portion heating lamp 52. Since the temperature at the periphery of the substrate in the region where the lamp light reaches reaches higher than a desired temperature, it is necessary to reduce the irradiation intensity of the substrate heating lamp 51d that simultaneously heats the periphery of the semiconductor substrate.
FIG. 9 is a diagram for explaining the improvement result of the in-plane temperature distribution by adjusting the irradiation intensity of the substrate heating lamp and the substrate support portion heating lamp.

FIG. 9A shows an n-type in which a nitride film is formed on a lamp irradiation side surface of a semiconductor substrate (reflectance is 0.10), and a p-type dopant is ion-implanted on a surface opposite to the lamp irradiation side. P-type when a semiconductor substrate is subjected to spike annealing with a rapid thermal processing apparatus before and after optimizing the irradiation intensity of the substrate heating lamp 51d and the support heating lamp 52 in order to improve the in-plane temperature difference. The distribution in the diameter direction of the maximum temperature obtained by converting the sheet resistance of the diffusion layer from the relationship between the sheet resistance value and the maximum temperature reached in the spike annealing process is shown.
FIG. 9B shows a substrate heating lamp 51d and a support for improving the in-plane temperature difference when a spike annealing process is performed on a semiconductor substrate having a reflectance of 0.10 with a nitride film formed on the lamp irradiation side surface. The maximum lamp power of each heating lamp group of the substrate heating lamp group 51 and the substrate support lamp group 52 and the difference between them before and after optimizing the irradiation intensity of the part heating lamp 52, and the substrate heating lamp A correction value of the set temperature of each region when the set temperature of the semiconductor substrate in the region heated by each lamp group is corrected in order to optimize the irradiation intensity of 51d and the support portion heating lamp 52 is shown.

  In the example of FIG. 9, by increasing the irradiation intensity of the supporting part heating lamp 52 by 3.2% and decreasing the irradiation intensity of the substrate heating lamp 51d for heating the peripheral part of the substrate by 3.6%, the temperature distribution in the substrate surface is greatly increased. It has been improved. Even if the set temperature of the periphery of the semiconductor substrate heated by the support heating lamp 52 is increased by 3.6 ° C. and the set temperature of the region heated by the substrate heating lamp 51d is decreased by 1.3 ° C., the semiconductor The temperature distribution in the substrate surface can be greatly improved.

As can be easily understood from FIG. 9, in the rapid thermal processing apparatus of the present embodiment, the balance between the substrate heating lamp group 51d and the support portion heating lamp group 52 in accordance with the reflectance on the lamp light irradiation side of the semiconductor substrate. An optimum value is obtained in advance and mounted in the lamp power control unit 10 as a correction function. The lamp power control unit 10 determines the lamp for heating the substrate based on the reflectance measured on the surface of the semiconductor substrate on the lamp irradiation side. By correcting the balance of the irradiation intensity of the group 51d and the substrate support portion heating lamp group 52, the in-plane temperature difference of the semiconductor substrate can be kept constant regardless of the reflectance of the semiconductor substrate.
FIG. 10 is an enlarged cross-sectional view of the periphery of the substrate in the rapid thermal processing apparatus according to one embodiment of the present invention. In FIG. 10, reference numeral 111 is radiation light from the semiconductor substrate 1, 121d is irradiation light from the substrate heating lamp 51d, 121e is irradiation light from the substrate heating lamp 51e, and 122 is irradiation light from the substrate support heating lamp 52. Respectively.
In addition to the functions described above with reference to FIG. 9, as shown in FIG. 10, in the rapid thermal processing apparatus of the present embodiment, the lamp group 52 for heating only the substrate support 3 and the temperature of the substrate support 3 are measured. The lamp power control unit 10 has a function of controlling the lamp group 52 that heats only the substrate support unit based on the temperature measurement result of the substrate support unit 3 calculated by the temperature calculation unit 9. Has been.

Therefore, in the rapid thermal processing apparatus of the present embodiment, a correction function is used in which an optimum value of the balance between the substrate heating lamp 51d and the support portion heating lamp 51e according to the reflectance of the lamp irradiation side surface of the semiconductor substrate is obtained in advance. Therefore, it is possible to correct the temperature difference between the semiconductor substrate 1 and the substrate support portion 3 that cannot be corrected even by the correction, and the in-plane temperature uniformity of the semiconductor substrate can be further improved.
As described above, according to the rapid thermal processing apparatus of the present embodiment, the reflectance of the semiconductor substrate is measured in advance inside the processing chamber or outside the processing chamber, and the lamp power control unit 10 is based on the measurement result. And applying a spike annealing process for correcting the lamp power control of the substrate heating lamp section and the support section heating lamp section to manufacture a semiconductor device, thereby obtaining a semiconductor device of uniform quality Is possible.
Next, a control procedure executed by the lamp power control unit 10 of the rapid thermal processing apparatus of FIG. 1 or 10 in the rapid thermal processing method according to the embodiment of the present invention will be described with reference to FIGS.

  FIG. 14 is a flowchart for explaining a rapid thermal processing method according to an embodiment of the present invention.

  In the rapid thermal processing method of FIG. 14, first, the reflectance of the semiconductor substrate 1 to be processed is measured in advance inside the processing chamber 2 or outside the processing chamber 2, and the lamp power control unit 10 measures the measured semiconductor substrate 1. The reflectance is held (S11).

  Next, the lamp power control unit 10 corrects the set temperature (Tset), which is the target temperature of the spike annealing process, based on the measured reflectance of the semiconductor substrate 1 (S12).

  Next, the temperature calculation unit 9 calculates (monitors) the temperature (Twafer) of the semiconductor substrate 1 from the radiation light from the semiconductor substrate 1 detected by the radiation light sensor 61 (S13).

  Next, the lamp power control unit 10 calculates the lamp power (irradiation intensity) of the lamp group 51 that heats the semiconductor substrate 1 according to the difference between the temperature (Twafer) of the semiconductor substrate and the corrected set temperature (Tset). (S14).

  Next, the lamp power control unit 10 controls the lamp power of the lamp group 51 that heats the semiconductor substrate 1 according to the calculated lamp power (S15). When step S15 is completed, the process returns to step S13. That is, while monitoring the temperature of the semiconductor substrate from the radiation sensor in real time, feedback control to the heating lamp power is executed according to the well-known PID control, and the semiconductor substrate is set to a desired target temperature (Tset) by the heating lamp. Until heated.

  FIG. 15 is a flowchart for explaining a rapid thermal processing method according to an embodiment of the present invention.

  In FIG. 15, steps S21, S23, and S25 are the same as steps S11, S13, and S15 described with reference to FIG.

  In the rapid thermal processing method of FIG. 15, the lamp power control unit 10 acquires the reflectance of the semiconductor substrate 1 measured in advance in step S <b> 21, and then corrects the PID parameter based on the measured reflectance of the semiconductor substrate 1. (S22).

  After monitoring the temperature (Twafer) of the semiconductor substrate 1 in step S23, the lamp power controller 10 heats the semiconductor substrate 1 according to the difference between the temperature (Twafer) of the semiconductor substrate and the set temperature (Tset). The lamp power (irradiation intensity) of the group 51 is calculated using the corrected PID parameter (S24). Then, similarly to the rapid thermal processing method of FIG. 14, the lamp power of the lamp group 51 for heating the semiconductor substrate 1 is controlled according to the calculated lamp power.

  As described above, the PID parameter in the lamp power control unit 10 for controlling the lamp power (irradiation intensity) of the lamp group 51 instead of correcting the set temperature Tset based on the reflectance of the semiconductor substrate 1 measured in advance. Even if the correction is made, the same effect can be obtained.

  FIG. 16 is a flowchart for explaining a rapid thermal processing method according to an embodiment of the present invention.

  In FIG. 16, steps S33 to S36 are the same as steps S12 to S15 described with reference to FIG.

  In the rapid thermal processing method of FIG. 16, first, the lamp power control unit 10 heats the semiconductor substrate 1 to be processed in the processing chamber 2 and holds the semiconductor substrate 1 at a first temperature sufficiently lower than the highest temperature for a certain time. The lamp power (irradiation intensity) of the lamp group 51 is controlled (S31). For example, when the highest temperature of annealing treatment is 1050 ° C., the first temperature is 550 ° C. lower than the highest temperature, and in this step S31, the semiconductor substrate 1 is held at 550 ° C. for 20 seconds.

  Next, the lamp power control unit 10 calculates the reflectance of the substrate measured in advance according to the lamp power (irradiation intensity) necessary to hold the semiconductor substrate 1 at 550 ° C. (S32).

  When the reflectance of the substrate is calculated in step S32, the lamp power control unit 10 corrects the set temperature (Tset), which is the target temperature of the spike annealing process, based on the reflectance (S33). Here, the method described above with reference to FIGS. 5 and 6 is used.

  Hereinafter, steps S34 to S36 executed by the lamp power control unit 10 are the same as steps S13 to S15 described with reference to FIG.

As described above with reference to FIGS. 5 and 6, the lamp power control unit 10 in the rapid thermal processing apparatus according to the present embodiment performs the lamp power and spike annealing necessary for maintaining the semiconductor substrate at the first temperature (550 ° C.). By correcting the lamp power control of the substrate heating lamp group 51 according to the lamp irradiation intensity value required to hold the semiconductor substrate at 550 ° C., using the correlation function representing the relationship between Regardless of the reflectivity of the semiconductor substrate, a constant spike annealing thermal budget or a constant maximum temperature can be obtained.
FIG. 17 is a flowchart for explaining a rapid thermal processing method according to an embodiment of the present invention.

  In FIG. 17, steps S43 to S46 are the same as steps S22 to S25 described in FIG.

  In the rapid thermal processing method of FIG. 17, first, the lamp power control unit 10 heats the semiconductor substrate 1 to be processed in the processing chamber 2 and holds the semiconductor substrate 1 at a first temperature sufficiently lower than the highest temperature for a certain time. The lamp power (irradiation intensity) of the lamp group 51 is controlled (S41). For example, when the highest temperature of annealing treatment is 1050 ° C., the first temperature is 550 ° C. lower than the highest temperature, and in this step S31, the semiconductor substrate 1 is held at 550 ° C. for 20 seconds.

  Next, the lamp power control unit 10 calculates the substrate reflectance measured in advance according to the lamp power (irradiation intensity) necessary to hold the semiconductor substrate 1 at 550 ° C. (S42).

  When the substrate reflectivity is calculated in step S42, the lamp power control unit 10 corrects the PID parameter based on the measured reflectivity of the semiconductor substrate 1 (S43).

  Hereinafter, steps S44 to S46 executed by the lamp power control unit 10 are the same as steps S23 to S25 described in FIG.

  FIG. 18 is a flowchart for explaining a rapid thermal processing method according to an embodiment of the present invention.

  In the rapid thermal processing method of FIG. 18, first, the reflectance of the semiconductor substrate 1 to be processed is measured in advance inside the processing chamber 2 or outside the processing chamber 2, and the lamp power control unit 10 measures the measured semiconductor substrate 1. The reflectance is held (S51).

  Next, the lamp power control unit 10 corrects the set temperature (Tset), which is the target temperature of the spike annealing process, based on the measured reflectance of the semiconductor substrate 1, and the corrected set temperature (Tset). Based on the above, a set temperature (Tset_c) at the center of the substrate, a set temperature (Tset_m) inside the periphery of the substrate, and a set temperature (Tset_e) at the periphery of the substrate and the substrate support are calculated (S52).

  In the following control procedure, the lamp power control unit 10 performs lamp power control of the plurality of heating lamps of the substrate heating lamp group 51 on the substrate central part, the substrate peripheral part inside, and the substrate peripheral part of the semiconductor substrate 1. Dividing into three groups of lamp groups, each group is performed in parallel.

  That is, the lamp power control unit 10 monitors (monitors) the temperature (Tc) at the center of the substrate by the radiation sensors 61a-61c at the center of the substrate of the semiconductor substrate 1 (S53a).

  Next, the lamp power control unit 10 controls the lamp power of the lamp groups 51a to 51c that heat the central portion of the semiconductor substrate 1 according to the difference between the temperature (Tc) of the central portion of the substrate and the corrected set temperature (Tset_c). (Irradiation intensity) is calculated (S54a).

  Next, the lamp power control unit 10 controls the lamp power of the lamp groups 51a to 51c that heat the central portion of the semiconductor substrate 1 according to the calculated lamp power (S55a).

  And if step S55a is performed, it will return to step S53a. That is, according to PID control, while monitoring the temperature of the central part of the semiconductor substrate 1 by the radiation light sensor groups 61a-61c, the target temperature (corrected by the central part of the semiconductor substrate 1 by the substrate heating lamp groups 51a-51c ( Heat to Tset_c).

  In parallel with the control of the central portion of the substrate, the lamp power control unit 10 monitors (monitors) the temperature (Tm) inside the peripheral portion of the substrate by the radiation light sensor 61d inside the peripheral portion of the semiconductor substrate 1 (S53b). ).

  Next, the lamp power control unit 10 controls the lamps of the lamp group 51d that heats the substrate peripheral part inside of the semiconductor substrate 1 according to the difference between the temperature (Tm) inside the substrate peripheral part and the corrected set temperature (Tset_m). Power (irradiation intensity) is calculated (S54b).

  Next, the lamp power control unit 10 controls the lamp power of the lamp group 51d that heats the inside of the peripheral portion of the semiconductor substrate 1 according to the calculated lamp power (S55b).

  When step S55b ends, the process returns to step S53b. That is, in accordance with the PID control, the target temperature (Tset_m) in which the substrate peripheral portion inside of the semiconductor substrate 1 is corrected by the substrate heating lamp group 51d while the temperature of the substrate peripheral portion of the semiconductor substrate 1 is monitored by the radiation sensor 61d. ) Until heated.

  Further, in parallel with the control of the substrate central portion and the substrate peripheral portion inside, the lamp power control unit 10 monitors the temperature (Te) of the substrate peripheral portion by the radiation sensor 61e of the substrate peripheral portion of the semiconductor substrate 1 ( Monitor) (S53c).

  Next, the lamp power control unit 10 determines the lamp power of the lamp group 51e that heats the substrate periphery of the semiconductor substrate 1 according to the difference between the temperature (Te) of the substrate periphery and the corrected set temperature (Tset_e). (Irradiation intensity) is calculated (S54c).

  Next, the lamp power control unit 10 controls the lamp power of the lamp group 51e that heats the peripheral portion of the semiconductor substrate 1 according to the calculated lamp power (S55c).

  And if step S55c is performed, it will return to step S53c. That is, according to the PID control, the substrate peripheral portion of the semiconductor substrate 1 is monitored to a desired target temperature (Tset_e) by the substrate heating lamp group 51e while the temperature of the substrate peripheral portion of the semiconductor substrate 1 is monitored by the radiation sensor 61e. Heat.

As described above with reference to FIGS. 7 and 9, the lamp power control unit 10 in the rapid thermal processing apparatus of the present embodiment includes the substrate heating lamp group 51 according to the reflectance on the lamp light irradiation side of the semiconductor substrate and the support unit heating. An optimal value of the balance of the irradiation intensity of the lamp group 52 is obtained in advance, and is mounted on the lamp power control unit 10 as a correction function, and the lamp power control unit 10 reflects the reflection on the surface of the lamp irradiation side of the semiconductor substrate measured in advance. The in-plane temperature difference of the semiconductor substrate is made constant regardless of the reflectivity of the semiconductor substrate by correcting the balance of the irradiation intensity of the substrate heating lamp group 51 and the substrate support portion heating lamp group 52 based on the rate. Can keep.
FIG. 19 is a flowchart for explaining a rapid thermal processing method according to an embodiment of the present invention.

  The rapid thermal processing method of the present embodiment is a method applied when spike annealing is performed on a semiconductor substrate having a reflectance lower than usual.

  In the rapid thermal processing method of FIG. 19, first, the reflectance of the semiconductor substrate 1 to be processed is measured in advance inside or outside the processing chamber 2, and the lamp power control unit 10 measures the measured semiconductor substrate 1. The reflectance is held (S61).

  Next, the lamp power control unit 10 determines that the measured reflectance is lower than the reflectance of a normal semiconductor substrate (for example, a silicon substrate) (S62). For example, when the semiconductor substrate 1 to be processed is a low reflectance substrate in which a nitride film having an appropriate thickness is formed on the surface irradiated with the lamp, the reflectance R is 0.10, and the reflectance of the silicon substrate It is determined that R is lower than 0.30.

  Next, the lamp power control unit 10 corrects the set temperature (Tset), which is the target temperature of the spike annealing process, based on the measured reflectance R of the semiconductor substrate 1 (S63). For example, when the reflectivity R = 0.10, the corrected set temperature Tset ′ = Tset + 1... Is obtained using the relationship between the reflectivity of the lamp irradiation side surface and the maximum temperature of spike annealing shown in FIG. Set to 5 ° C.

  Next, based on the corrected set temperature (Tset ′) and the measured reflectance R of the semiconductor substrate 1, the lamp power control unit 10 sets the set temperature (Tset_c) at the center of the substrate and the set temperature inside the substrate periphery. (Tset_m) and the set temperature (Tset_e) around the substrate are corrected (S64). For example, when the reflectivity R is 0.10, the in-plane temperature difference when the semiconductor substrate having a reflectivity of 0.10 having a nitride film formed on the lamp irradiation side surface shown in FIG. Tset_c = Tset ′, Tset_m = Tset′−1.3 ° C., using the set temperature correction values for each region when the set temperature of the semiconductor substrate in the region heated by each lamp group is corrected to improve Tset_e = Tset ′ + 3.6 ° C.

  In the following control procedure, the lamp power control unit 10 performs lamp power control of the plurality of heating lamps of the substrate heating lamp group 51 on the substrate central part, the substrate peripheral part inside, and the substrate peripheral part of the semiconductor substrate 1. Dividing into three groups of lamp groups, each group is performed in parallel.

  In FIG. 19, steps S65a-S67a, steps S65b-S67b, and steps S65c-S67c are the same as steps S53a-S55a, S53b-S55b, and steps S53c-S55c described in FIG. Description is omitted.

  FIG. 20 is a flowchart for explaining a rapid thermal processing method according to an embodiment of the present invention.

  In the rapid thermal processing method of FIG. 20, first, the reflectance of the semiconductor substrate 1 to be processed is measured in advance inside or outside the processing chamber 2, and the lamp power control unit 10 determines the measured semiconductor substrate 1. The reflectance is held (S71).

  Next, the lamp power control unit 10 corrects the set temperature (Tset), which is the target temperature of the spike annealing process, based on the measured reflectance of the semiconductor substrate 1, and the corrected set temperature (Tset). Based on the above, a set temperature (Tset_c) at the center of the substrate, a set temperature (Tset_e) at the periphery of the substrate, and a set temperature (Tset_s) at the substrate support are calculated (S72).

  In the following control procedure, the lamp power control unit 10 controls the lamp power control of the plurality of heating lamps of the substrate heating lamp group 51 and the substrate support unit heating lamp group 52 with respect to the substrate central portion and the substrate peripheral portion of the semiconductor substrate 1. And it divides into three groups of the heating lamp group which concerns on the board | substrate support part 3, and it carries out in parallel for every group.

  That is, the lamp power control unit 10 monitors (monitors) the temperature (Tc) at the center of the substrate by the radiation sensors 61a-61d at the center of the substrate of the semiconductor substrate 1 (S73a).

  Next, the lamp power control unit 10 controls the lamp power of the lamp groups 51a to 51d that heat the central portion of the semiconductor substrate 1 according to the difference between the temperature (Tc) of the substrate central portion and the corrected set temperature (Tset_c). (Irradiation intensity) is calculated (S74a).

  Next, the lamp power control unit 10 controls the lamp power of the lamp groups 51a to 51d that heat the central part of the semiconductor substrate 1 according to the calculated lamp power (S75a).

  And if step S75a is performed, it will return to step S73a. That is, while monitoring the temperature of the semiconductor substrate 1 by the radiation light sensor groups 61a-61d, feedback control to the lamp power of the substrate heating lamp groups 51a-51d is executed according to PID control, and the center of the semiconductor substrate 1 is Part is heated to the corrected target temperature (Tset_c).

  In parallel with the control of the central portion of the substrate, the lamp power control unit 10 monitors (monitors) the temperature (Te) of the peripheral portion of the substrate by the radiation sensor 61e at the peripheral portion of the semiconductor substrate 1 (S73b).

  Next, the lamp power control unit 10 determines the lamps of the lamp groups 51d-51e that heat the substrate peripheral part of the semiconductor substrate 1 according to the difference between the temperature (Te) of the substrate peripheral part and the corrected set temperature (Tset_e). Power (irradiation intensity) is calculated (S74b).

  Next, the lamp power control unit 10 controls the lamp power of the lamp groups 51d-51e that heat the peripheral portion of the semiconductor substrate 1 according to the calculated lamp power (S75b).

  When step S75b ends, the process returns to step S73b. That is, while monitoring the temperature of the semiconductor substrate 1 with the radiation light sensor 61e, feedback control to the lamp power of the substrate heating lamp group 51e is executed according to PID control, and the substrate peripheral portion of the semiconductor substrate 1 is corrected. Heat to target temperature (Tset_e).

  Further, in parallel with the control of the central part and the peripheral part of the substrate, the lamp power control unit 10 monitors (monitors) the temperature (Ts) of the substrate support unit 3 by the temperature monitor 62 of the substrate support unit 3 ( S73c).

  Next, the lamp power control unit 10 determines the lamp power (irradiation intensity) of the lamp group 52 that heats the substrate support unit 3 according to the difference between the temperature (Ts) of the substrate support unit 3 and the corrected set temperature (Tset_s). ) Is calculated (S74c).

  Next, the lamp power control unit 10 controls the lamp power of the lamp group 52 that heats the substrate support unit 3 according to the calculated lamp power (S75c).

  And if step S75c is performed, it will return to step S73c. That is, according to PID control, feedback control to the lamp power of the substrate support portion heating lamp group 52 is executed to heat the semiconductor substrate support portion to the corrected target temperature (Tset_s).

As described above with reference to FIGS. 7 and 9, the lamp power control unit 10 in the rapid thermal processing apparatus of the present embodiment includes the substrate heating lamp group 51 according to the reflectance on the lamp light irradiation side of the semiconductor substrate and the support unit heating. An optimum value of the balance of the lamp group 52 is obtained in advance and mounted as a correction function in the lamp power control unit 10, and the lamp power control unit 10 is based on the reflectance of the lamp irradiation side surface of the semiconductor substrate measured in advance. Thus, by correcting the irradiation intensity balance of the substrate heating lamp group 51 and the substrate support portion heating lamp group 52, the in-plane temperature difference of the semiconductor substrate can be kept constant regardless of the reflectance of the semiconductor substrate. it can.
FIG. 21 is a flowchart for explaining a rapid thermal processing method according to an embodiment of the present invention.

  In FIG. 21, steps S81, S83a, S85a, S83b, S85b, S83c, and S85c are the same as steps S71, S73a, S75a, S73b, S75b, S73c, and S75c described in FIG. 20, respectively. Omitted.

  In the rapid thermal processing method of FIG. 21, the lamp power control unit 10 obtains the reflectance of the semiconductor substrate 1 measured in advance in step S <b> 81, and then, based on the measured reflectance of the semiconductor substrate 1, The PID parameters of the substrate peripheral part and the substrate support part 3 are respectively corrected (S82).

  In the following control procedure, the lamp power control unit 10 controls the lamp power control of the plurality of heating lamps of the substrate heating lamp group 51 and the substrate support unit heating lamp group 52 with respect to the substrate central portion and the substrate peripheral portion of the semiconductor substrate 1. And it divides into three groups of the heating lamp group which concerns on the board | substrate support part 3, and it carries out in parallel for every group. In order to avoid duplication of explanation, only lamp power control related to the central portion of the semiconductor substrate 1 will be described below. As shown in FIG. 21, the lamp power control of the substrate peripheral portion of the semiconductor substrate 1 and the substrate support portion 3 is executed in the same manner.

  After monitoring the temperature (Tc) of the central portion of the semiconductor substrate 1 in step S83a, the lamp power control unit 10 determines the semiconductor substrate 1 according to the difference between the temperature (Tc) of the central portion of the substrate and the set temperature (Tset). The lamp power (irradiation intensity) of the lamp groups 51a to 51d that heat the central part of the lamp is calculated using the corrected PID parameter (S84a). Then, similarly to the rapid thermal processing method of FIG. 14, the lamp power of the lamp groups 51 a to 51 d that heat the central portion of the semiconductor substrate 1 is controlled according to the calculated lamp power.

  Thus, instead of correcting the set temperature Tset based on the reflectance of the semiconductor substrate 1 measured in advance, the lamp power (irradiation intensity) of the substrate heating lamp group 51 and the substrate support portion heating lamp group 52 is changed. The same effect can be obtained by correcting the PID parameter in the lamp power control unit 10 for control.

  Next, FIG. 11 shows an example in which spike annealing processing by the rapid thermal processing method according to one embodiment of the present invention is applied to the manufacture of a semiconductor device.

Normally, in the formation of a CMOS transistor, spike annealing is performed at a high temperature and for a short time in order to activate the dopant after ion implantation into the source / drain regions. Here, a miniaturized CMOS transistor of 0.1 μm or less is illustrated as a semiconductor device, but the present invention is not limited to a miniaturized CMOS transistor of 0.1 μm or less, and a transistor structure having a gate and a source / drain It can be applied to the semiconductor device.
As shown in FIG. 11A, element active regions 103 and 104 are formed on a semiconductor substrate (here, a silicon substrate) 101 having an STI (shallow trench isolation) element isolation structure 102 by a normal CMOS process. A p-type impurity is ion-implanted into the n-type element active region 103 and an n-type impurity is ion-implanted into the p-type element active region 104 to form a p-well 103a and an n-well 104a. Subsequently, a gate insulating film 105 is formed in each element active region by thermal oxidation, and then a polycrystalline silicon film is deposited by a CVD method or the like. Then, the polycrystalline silicon film and the gate insulating film are formed by photolithography and dry etching. By patterning into an electrode shape, a gate electrode 106 is formed on the element active region via a gate insulating film.
Subsequently, as shown in FIGS. 11B and 11C, a resist mask 107 that exposes only the n-type element active region 103 is formed. First, the pocket region 111 is formed only in the n-type element active region 103. In order to form it, ion implantation of p-type impurities (here, indium (In)) is performed.
As the conditions for the ion implantation of In, the acceleration energy is set to 30 to 100 keV, the dose amount is set to 5E12 / cm 2 to 2E13 / cm 2, and the ions are implanted while being inclined from the direction perpendicular to the surface of the semiconductor substrate 101. The tilt angle (tilt angle) is 0 ° to 45 °, with the direction perpendicular to the substrate surface being 0 °. In this case, ions are implanted from four directions that are symmetrical with respect to the substrate surface with the acceleration energy and the dose. In the following description, when the tilt angle is given, the description is omitted assuming that four directions are similarly injected.
Note that boron (B) may be used as an impurity instead of In. In that case, the acceleration energy is set to 3 keV to 10 keV.
Subsequently, as shown in FIG. 11D, ion implantation of an n-type impurity (here, arsenic (As)) is performed in order to form the extension region 113. In this case, it is also preferable to use phosphorus (P) or antimony (Sb) instead of As.
As ion implantation conditions, the acceleration energy is 1 to 5 keV, the dose is 1E14 to 3E15 / cm2, and the tilt angle is 0 to 10 °.
Subsequently, as shown in FIG. 11E, after the resist mask 107 is removed by ashing or the like, an annealing process is performed. The annealing conditions are 900 ° C. to 1025 ° C., the holding time is approximately 0 seconds, and the reaction is performed in an inert gas atmosphere such as nitrogen or in an atmosphere in which 1000 ppm or less of oxygen and an inert gas are mixed.
In this annealing process, the reflectance of the semiconductor substrate is measured in advance inside the processing chamber or outside the processing chamber, and based on the measurement result, the substrate heating lamp unit and the support unit are irradiated with light to support the support unit. By applying the spike annealing process according to the rapid heat treatment method of the present invention, which corrects the lamp power control of the heating part heating lamp part, the element isolation structure and the size, pattern and various types of the gate electrode are constituted. Regardless of the optical properties of the film and the like, it is possible to accurately heat the film to a desired temperature and minimize the temperature difference in the substrate surface, and a stable quality semiconductor device can be obtained.
Note that this annealing treatment particularly considers improving the electrical activity of ion-implanted In for forming the pocket region 111, and may be omitted depending on the subsequent heat treatment and adjustment of the thermal process. is there.

  In the present embodiment, the case where a sidewall is not formed on the sidewall of the gate electrode 106 in each of the above implantation steps is illustrated. However, in order to obtain an optimal overlap between the extension region 113 and the gate electrode 106, the gate Thin sidewalls 109 (see FIG. 11 (i)) having a film thickness of about 5 nm to 20 nm may be formed on both side surfaces of the electrode 106, and the above-described implantations may be performed in this state. In this case, the film configuration and shape of the sidewall 109 do not need to be particularly set, and may have any function as a spacer (mask).

Subsequently, as shown in FIGS. 11 (f) and 11 (g), a resist mask 108 that exposes only the p-type element active region 104 is formed, and an n-type impurity (here, Antimony (Sb)) is ion-implanted.
The conditions for ion implantation of Sb are an acceleration energy of 30 keV to 100 keV, a dose of 5E12 / cm2 to 2E13 / cm2, and a tilt angle of 0 ° to 45 °. In this case, ion implantation may be performed using another n-type impurity such as As or P instead of Sb.

Subsequently, as shown in FIG. 11H, p-type impurities (here, boron (B)) are ion-implanted to form the extension region 116.
B ion implantation conditions include an acceleration energy of 0.5 keV or less, a dose of 1E14 to 3E15 / cm2, and a tilt angle of 0 ° to 10 °. Here, when BF2 + is used as the implanted ion species, it is optimum that the acceleration energy is 2.5 keV or less and the dose is the same. This optimum condition varies depending on the presence or absence of the sidewall 109 and its thickness. As shown in FIG. 11 (i), when there is a sidewall 109, the energy is increased in the ion implantation for forming the pocket region 114, and the dose is increased in the ion implantation for forming the extension region 116. It is necessary to make it a proper condition.

  Subsequently, as shown in FIG. 11J, deep source / drain regions (deep S / D regions) 117 and 118 are formed in the device active regions 103 and 104, respectively.

  Specifically, after removing the resist mask 108 by ashing or the like, a silicon oxide film is deposited on the entire surface by a CVD method or the like, and the entire surface of the silicon oxide film is anisotropically etched (etched back). Sidewalls 109 are formed by leaving the silicon oxide film only on the side surfaces of the gate electrodes 106. Then, a resist mask exposing only the n-type element active region 103 is formed. An n-type impurity (phosphorus (P) in this case) is ion-implanted into the surface layer of the semiconductor substrate on both sides of the gate electrode, using the gate electrode 106 and the sidewall 109 as a mask, in the n-type element active region 103 exposed from the resist mask. Thus, the deep S / D region 117 is formed.

  The conditions for ion implantation of P are an acceleration energy of 5 to 20 keV, a dose of 2E15 / cm2 to 1E16 / cm2, and a tilt angle of 0 ° to 10 °. Instead of P, arsenic (As) may be ion-implanted.

  Subsequently, similarly, after removing the resist mask by ashing or the like, a resist mask exposing only the p-type element active region 104 is formed. Then, a p-type impurity (in this case, B) is ion-implanted into the surface layer of the semiconductor substrate on both sides of the gate electrode, using the gate electrode 106 and the sidewall 109 as a mask, in the p-type element active region 104 exposed from the resist mask. Thus, the deep S / D region 118 is formed.

  The conditions for B ion implantation are acceleration energy of 2 to 5 keV, dose amount of 2E15 / cm2 to 1E16 / cm2, and tilt angle of 0 ° to 10 °. Here, the ion implantation of B may be any ion containing B such as BF2.

Then, annealing is performed at a target temperature of 900 ° C. to 1050 ° C. and a holding time of approximately 0 seconds to activate each impurity. In this annealing process, the reflectance of the semiconductor substrate is measured in advance inside the processing chamber or outside the processing chamber, and based on the measurement result, the substrate heating lamp unit and the support unit are irradiated with light to support the support unit. By applying the spike annealing process according to the rapid heat treatment method of the present invention, which corrects the lamp power control of the heating part heating lamp part, the element isolation structure and the size, pattern and various types of the gate electrode are constituted. Regardless of the optical properties of the film and the like, it is possible to accurately heat the film to a desired temperature and minimize the temperature difference in the substrate surface, and a stable quality semiconductor device can be obtained.
As described above, in the semiconductor device of FIG. 11J, the pocket regions 111 and 114, the extension regions 113 and 116, and the deep S / D regions 117 and 118 are formed in the semiconductor substrate 100, and the pocket region 111 and the N diffusion are formed. The region 112, the extension region 113, and the deep S / D region 117 constitute an n-type impurity diffusion layer 121, and the pocket region 114, the N diffusion region 115, the extension region 116, and the deep S / D region are p-type impurity diffusion layers. 122 is constituted.

  Thereafter, an nMOS transistor is formed in the n-type element active region 103 and a pMOS transistor is formed in the p-type element active region 104 through processes for forming an interlayer insulating film, contact holes, various wiring layers, and the like.

  In this embodiment, the case where a pair of impurity diffusion layers to be a source / drain is formed after the gate electrode is formed is illustrated, but the present invention is not limited to this, and the formation order of these is appropriately determined. It can be changed.

  FIG. 12 shows the nMOS transistor before and after the correction by adjusting the irradiation intensity of the lamp when the nMOS transistor is formed as described in FIG. 2 shows a radial distribution of a disk-shaped semiconductor substrate having on-current characteristics.

  As shown in FIGS. 12A and 12B, the distribution in the diameter direction of the on-current characteristic of the nMOS transistor before correction was −40 to + 10%, but after correction by adjusting the irradiation intensity of the lamp. It can be seen that the radial distribution of the disk-shaped semiconductor substrate of the on-current characteristics of the nMOS transistor is suppressed to about −15 to + 12%. Also from this, according to the rapid thermal processing apparatus of the present invention, when spike annealing is performed on a semiconductor substrate having different reflectivity, the maximum temperature is kept constant, and the temperature of the semiconductor substrate and the semiconductor substrate support portion is kept constant. It can be seen that the effect of suppressing the temperature difference between the vicinity of the contact portion with the substrate support portion and the other portions can be obtained by maintaining the same.

  As described above, according to the present invention, the reflectance of the semiconductor substrate is measured in advance in the processing chamber or outside the processing chamber, and light is applied to the substrate heating lamp unit and the support unit based on the measurement result. By correcting the lamp power control of the lamp part for heating the support part by irradiating the support part, when the spike annealing treatment is performed on the semiconductor substrate with different reflectivity, the maximum temperature reached is kept constant, and the semiconductor The temperature of a board | substrate and a semiconductor substrate support part can be kept equal, and the temperature difference of the contact location periphery with a board | substrate support part and other places can be suppressed.

  (Additional remark 1) The processing chamber which heats a semiconductor substrate, the board | substrate support part which is arrange | positioned in the said processing chamber and supports the said board | substrate, and the lamp | ramp part which irradiates and heats the said board | substrate supported by the said board | substrate support part A temperature sensor that measures the temperature of the substrate, a temperature calculation unit that calculates the temperature of the substrate according to an output result of the temperature sensor, and the temperature according to the temperature of the substrate calculated by the temperature calculation unit A rapid thermal processing apparatus including a control unit for controlling the irradiation intensity of the lamp unit, wherein the control unit corrects a control parameter for the irradiation intensity of the lamp unit based on the reflectance of the substrate surface measured in advance. A rapid thermal processing apparatus characterized by:

  (Additional remark 2) The processing chamber which heats a semiconductor substrate, the board | substrate support part which is arrange | positioned in the said processing chamber and supports the said board | substrate, and light-irradiates and heats the surface side of the said board | substrate supported by the said board | substrate support part A lamp unit, a radiation sensor disposed on the back side of the substrate and receiving radiation light from the substrate, a temperature calculation unit that calculates the temperature of the substrate according to an output result of the radiation light sensor, A rapid thermal processing apparatus including a control unit that controls irradiation intensity of the lamp unit according to the temperature of the substrate calculated by the temperature calculation unit, wherein the control unit reflects the substrate surface measured in advance. A rapid heat treatment apparatus that corrects a control parameter of irradiation intensity of the lamp unit based on a rate.

(Supplementary Note 3) A processing chamber for heating a semiconductor substrate, a substrate support part disposed in the processing chamber for supporting the substrate, and heating the surface side of the substrate supported by the substrate support part by light irradiation A lamp part for the substrate, a lamp part for the support part that irradiates and heats the substrate support part, a reflector that is disposed on the back side of the board and reflects radiation light from the back side of the board, and the board A plurality of radiation light sensors disposed on the back surface side of the substrate and receiving radiation light from the back surface of the substrate that has been multiple-reflected by the substrate back surface and the reflecting plate; and a radiation rate sensor that directly receives radiation light from the substrate back surface; A radiation rate calculating unit that calculates a radiation rate of the back surface of the substrate from outputs of the plurality of radiation light sensors and the output of the radiation rate sensor; and according to output results of the radiation light sensor and the radiation rate calculating unit. Calculate the temperature, the temperature A rapid thermal processing apparatus including a control unit that controls irradiation intensity of the lamp unit for the substrate and the lamp unit for the support unit according to the temperature calculated by the exit unit, wherein the control unit is configured by the temperature calculation unit. The irradiation intensity of the lamp part for the substrate is controlled according to the calculated temperature of the substrate, and the irradiation intensity of the lamp part for the support part is controlled according to the temperature of the substrate support part calculated by the temperature calculation part. And a rapid thermal processing apparatus that corrects control parameters of irradiation intensity of the lamp part for the substrate and the lamp part for the support part, respectively, based on the reflectance of the substrate surface measured in advance.
(Additional remark 4) The processing chamber which heats a semiconductor substrate, the board | substrate support part which is arrange | positioned in the said processing chamber and supports the said board | substrate, and the surface side of the said board | substrate supported by the said board | substrate support part is irradiated with light, and is heated A lamp part for the substrate, a lamp part for the support part that irradiates and heats the substrate support part, a reflector that is disposed on the back side of the board and reflects radiation light from the back side of the board, and the board A plurality of radiation light sensors disposed on the back surface side of the substrate and receiving radiation light from the back surface of the substrate that has been multiple-reflected by the substrate back surface and the reflecting plate; and a radiation rate sensor that directly receives radiation light from the substrate back surface; A radiation rate calculating unit for calculating a radiation rate on the back surface of the substrate from outputs of the plurality of radiation light sensors and an output of the radiation rate sensor; and a radiation sensor for supporting unit that directly receives radiation light from the substrate supporting unit. And the radiation light sensor A temperature calculation unit that calculates a temperature of the substrate according to an output result of the emissivity calculation unit, and calculates a temperature of the substrate support unit according to an output result of the radiation light sensor for the support unit; and the temperature calculation unit A rapid thermal processing apparatus including a control unit that controls irradiation intensity of the substrate lamp unit and the support unit lamp unit according to the temperature calculated by the temperature calculation unit, wherein the control unit is calculated by the temperature calculation unit. Controlling the irradiation intensity of the lamp part for the substrate according to the temperature of the substrate, controlling the irradiation intensity of the lamp part for the support part according to the temperature of the substrate support part calculated by the temperature calculation part, And the rapid thermal processing apparatus which corrects the control parameter of the irradiation intensity | strength of the said lamp | ramp part for a board | substrate and the said lamp | ramp part for a support part respectively based on the reflectance of the said substrate surface measured beforehand.
(Supplementary Note 5) Before the substrate is heated in the processing chamber to reach a desired target temperature, the reflectance of the substrate surface is measured in the processing chamber in advance, and the control unit performs the measurement. The rapid thermal processing apparatus according to any one of appendices 1 to 4, wherein the lamp irradiation intensity is corrected based on the reflectance.
(Supplementary Note 6) When the substrate is heated in the processing chamber and held at a first temperature lower than a desired target temperature for a certain period of time, a lamp irradiation intensity value necessary for maintaining the first temperature is measured in advance. The rapid heat treatment apparatus according to any one of appendices 1 to 4, wherein the control unit corrects the lamp irradiation intensity based on the measured lamp irradiation intensity value.

  (Additional remark 7) The said control part correct | amends lamp irradiation intensity | strength based on the correlation of the reflectance of the said substrate surface measured in advance, and maximum temperature error, Any one of Additional remark 1 thru | or 4 characterized by the above-mentioned. The rapid thermal processing apparatus described.

  (Additional remark 8) The said control part is the irradiation intensity | strength of the said lamp | ramp part for a board | substrate and the said support part lamp | ramp part from which the reflectance of the said substrate surface measured beforehand and the temperature difference of the said board | substrate and the said board | substrate support part become the minimum The rapid thermal processing apparatus according to appendix 3 or 4, wherein the irradiation intensity balance of the substrate lamp unit and the support unit lamp unit is corrected based on a correlation with the balance.

(Supplementary note 9) The rapid thermal processing apparatus according to any one of supplementary notes 1 to 4, wherein the reflectance of the substrate surface is measured in advance outside the processing chamber.
(Additional remark 10) The processing chamber which heats a semiconductor substrate, the board | substrate support part which is arrange | positioned in the said processing chamber and supports the said board | substrate, and light-irradiates and heats the surface side of the said board | substrate supported by the said board | substrate support part A lamp unit, a radiation sensor disposed on the back side of the substrate and receiving radiation light from the substrate, a temperature calculation unit that calculates the temperature of the substrate according to an output result of the radiation light sensor, A method of manufacturing a semiconductor device that performs rapid thermal processing of the substrate using a rapid thermal processing apparatus including a control unit that controls irradiation intensity of the lamp unit according to the temperature of the substrate calculated by the temperature calculation unit. And a method of manufacturing a semiconductor device, comprising: correcting each irradiation intensity of the lamp part for the substrate and the lamp part for the support part based on the reflectance of the substrate surface measured in advance. .

  (Additional remark 11) The processing chamber which heats a semiconductor substrate, the board | substrate support part which is arrange | positioned in the said processing chamber and supports the said board | substrate, and light-irradiates and heats the surface side of the said board | substrate supported by the said board | substrate support part A lamp part for the substrate, a lamp part for the support part that irradiates and heats the substrate support part, a reflector that is disposed on the back side of the board and reflects radiation light from the back side of the board, and the board A plurality of radiation light sensors disposed on the back surface side of the substrate and receiving radiation light from the back surface of the substrate that has been multiple-reflected by the substrate back surface and the reflecting plate; and a radiation rate sensor that directly receives radiation light from the back surface of the substrate; A radiation rate calculating unit for calculating a radiation rate on the back surface of the substrate from outputs of the plurality of radiation light sensors and an output of the radiation rate sensor; and a radiation sensor for supporting unit that directly receives radiation light from the substrate supporting unit. And the radiation sensor A temperature calculation unit that calculates a temperature of the substrate according to an output result of the emissivity calculation unit, and calculates a temperature of the substrate support unit according to an output result of the radiation light sensor for the support unit, and the temperature calculation Semiconductor device manufacturing method for performing rapid thermal processing of the substrate using a rapid thermal processing apparatus comprising a control unit that controls irradiation intensity of the substrate lamp unit and the support unit lamp unit according to the temperature calculated by the unit The control unit controls the irradiation intensity of the lamp unit for the substrate according to the temperature of the substrate calculated by the temperature calculation unit, and according to the calculated temperature of the substrate support unit. Based on the procedure for controlling the irradiation intensity of the lamp section for the support section and the reflectance of the substrate surface measured in advance, the control parameters for the irradiation intensity of the lamp section for the substrate and the lamp section for the support section are respectively set. The method of manufacturing a semiconductor device characterized by having a step of correcting.

  (Supplementary note 12) A semiconductor device including a transistor including an impurity diffusion layer formed by performing rapid thermal processing of the semiconductor substrate after ion implantation of impurities into an element active region of the semiconductor substrate, A semiconductor device, wherein the semiconductor substrate is subjected to rapid thermal processing using the method for manufacturing a semiconductor device to form the impurity diffusion layer.

  (Supplementary note 13) Before the substrate is heated in the processing chamber to reach a desired target temperature, the reflectance of the substrate surface is measured in the processing chamber, and based on the measured reflectance, The method of manufacturing a semiconductor device according to appendix 11, wherein the lamp irradiation intensity is corrected.

  (Supplementary Note 14) When the substrate is heated in the processing chamber and held at a lower first temperature for a certain time, a lamp irradiation intensity value necessary for maintaining the first temperature is calculated, 12. The method of manufacturing a semiconductor device according to appendix 11, wherein the lamp irradiation intensity is corrected based on the calculated lamp irradiation intensity value.

  (Supplementary note 15) The method of manufacturing a semiconductor device according to supplementary note 11, wherein the lamp irradiation intensity is corrected based on a correlation between the reflectance of the substrate surface measured in advance and a maximum temperature error.

  (Supplementary Note 16) Correlation between the reflectance of the substrate surface measured in advance and the irradiation intensity balance of the lamp part for the substrate and the lamp part for the support part that minimizes the temperature difference between the substrate and the substrate support part 13. The method of manufacturing a semiconductor device according to claim 11, wherein an irradiation intensity balance between the lamp part for the substrate and the lamp part for the support part is corrected based on the above.

  (Supplementary note 17) The method of manufacturing a semiconductor device according to supplementary note 11, wherein the reflectance of the substrate surface is measured in advance outside the processing chamber.

It is sectional drawing which shows the structure of the rapid thermal processing apparatus which concerns on one Embodiment of this invention. It is a figure for demonstrating the reflectance dependence of the substrate surface by the side of a lamp irradiation of the temperature profile of the semiconductor substrate in the conventional rapid thermal processing apparatus. It is a figure for demonstrating the correlation with the highest achieved temperature of the spike annealing process in the conventional rapid thermal processing apparatus, and the reflectance of the substrate surface by the side of a lamp irradiation. It is a figure for demonstrating the measuring method of the reflectance of the semiconductor substrate in the conventional heat processing method. It is a figure for demonstrating the relationship between the lamp power required in order to hold | maintain a substrate temperature to 550 degreeC in the conventional rapid thermal processing apparatus, and the reflectance of the board | substrate surface by the side of a lamp irradiation. It is a figure for demonstrating the correlation with lamp power required in order to hold | maintain a substrate temperature at 550 degreeC in the conventional rapid thermal processing apparatus, and the highest ultimate temperature of spike annealing. It is a figure for demonstrating the reflectance dependence of the substrate surface by the side of a lamp irradiation of the in-plane temperature distribution of the semiconductor substrate in the conventional rapid thermal processing apparatus. It is sectional drawing which expands and shows the board | substrate periphery part in the conventional rapid thermal processing apparatus. It is a figure for demonstrating the improvement result of the in-plane temperature distribution by irradiation intensity adjustment of the lamp | ramp for a substrate heating, and the lamp | ramp for a board | substrate support part heating. It is sectional drawing which expands and shows the board | substrate periphery part in the rapid thermal processing apparatus which concerns on one Embodiment of this invention. It is a figure for demonstrating an example which applied the spike annealing process by the rapid thermal processing method which concerns on one Embodiment of this invention to the manufacturing method of the semiconductor device. It is a figure which shows distribution of the radial direction of the disk-shaped semiconductor substrate of the on-current characteristic of NMOS transistor before and behind performing correction | amendment by lamp irradiation intensity adjustment when processing with the rapid thermal processing apparatus which concerns on one Embodiment of this invention. . It is a flowchart for demonstrating the conventional rapid thermal processing method. It is a flowchart for demonstrating the rapid thermal processing method which concerns on one Embodiment of this invention. It is a flowchart for demonstrating the rapid thermal processing method which concerns on one Embodiment of this invention. It is a flowchart for demonstrating the rapid thermal processing method which concerns on one Embodiment of this invention. It is a flowchart for demonstrating the rapid thermal processing method which concerns on one Embodiment of this invention. It is a flowchart for demonstrating the rapid thermal processing method which concerns on one Embodiment of this invention. It is a flowchart for demonstrating the rapid thermal processing method which concerns on one Embodiment of this invention. It is a flowchart for demonstrating the rapid thermal processing method which concerns on one Embodiment of this invention. It is a flowchart for demonstrating the rapid thermal processing method which concerns on one Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Processing chamber 3 Substrate support part 31 Cylindrical cylinder 32 Ring plate 4 Chamber bottom part 51 Substrate heating lamp group 51a-51e Heating lamp 52 Substrate support part heating lamp group 61 Substrate radiation light sensor group 61a-61e Radiation Optical sensor 61a 'Emissivity sensor 62 Radiation sensor for substrate support part 7 Bearing part 8 Reflector 9 Temperature calculation part 10 Lamp power control part 13 Emissivity calculation part

Claims (10)

A processing chamber for heating a semiconductor substrate, a substrate support portion disposed in the processing chamber for supporting the substrate, a lamp portion for heating the substrate supported by the substrate support by light irradiation, and the substrate A temperature sensor that measures the temperature of the substrate, a temperature calculation unit that calculates the temperature of the substrate according to an output result of the temperature sensor, and irradiation of the lamp unit according to the temperature of the substrate calculated by the temperature calculation unit A rapid thermal processing apparatus comprising a control unit for controlling strength,
The rapid thermal processing apparatus, wherein the control unit corrects a control parameter of irradiation intensity of the lamp unit based on a reflectance of the substrate surface measured in advance. A processing chamber for heating a semiconductor substrate; a substrate support portion disposed in the processing chamber for supporting the substrate; and a lamp portion for irradiating and heating the surface side of the substrate supported by the substrate support portion; A radiation light sensor disposed on the back side of the substrate for receiving radiation light from the substrate, a temperature calculation unit for calculating the temperature of the substrate according to an output result of the radiation light sensor, and the temperature calculation unit A rapid thermal processing apparatus comprising a control unit that controls the irradiation intensity of the lamp unit according to the temperature of the substrate calculated by:
The rapid thermal processing apparatus, wherein the control unit corrects a control parameter of irradiation intensity of the lamp unit based on a reflectance of the substrate surface measured in advance. A processing chamber for heating a semiconductor substrate, a substrate support portion disposed in the processing chamber for supporting the substrate, and a substrate lamp for heating the surface side of the substrate supported by the substrate support portion by light irradiation A support portion lamp portion that irradiates and heats the substrate support portion with light, a reflector that is disposed on the back surface side of the substrate and reflects radiation light from the back surface of the substrate, and on the back surface side of the substrate A plurality of radiation sensors that receive radiation light from the back surface of the substrate that is disposed and multiple-reflected by the reflector, and a radiation rate sensor that directly receives radiation light from the back surface of the substrate; A radiation rate calculation unit that calculates the radiation rate of the back surface of the substrate from the output of the radiation light sensor and the output of the radiation rate sensor, and the temperature of the substrate is calculated according to the output results of the radiation light sensor and the radiation rate calculation unit. The temperature calculation unit A according to the calculated temperature rapid thermal processing system and a control unit for controlling the illumination intensity of the substrate lamp unit and the supporting unit for the lamp unit,
The control unit controls the irradiation intensity of the substrate lamp unit according to the temperature of the substrate calculated by the temperature calculation unit, and the control unit controls the irradiation intensity of the substrate support unit calculated by the temperature calculation unit. Control the irradiation intensity of the lamp section for the support section, and correct the control parameters of the irradiation intensity of the lamp section for the substrate and the lamp section for the support section based on the reflectance of the substrate surface measured in advance. A rapid thermal processing apparatus characterized by that. A processing chamber for heating a semiconductor substrate, a substrate support portion disposed in the processing chamber for supporting the substrate, and a substrate lamp for heating the surface side of the substrate supported by the substrate support portion by light irradiation A support portion lamp portion that irradiates and heats the substrate support portion with light, a reflector that is disposed on the back surface side of the substrate and reflects radiation light from the back surface of the substrate, and on the back surface side of the substrate A plurality of radiation sensors that receive radiation light from the back surface of the substrate that is disposed and multiple-reflected by the reflector, and a radiation rate sensor that directly receives radiation light from the back surface of the substrate; A radiation rate calculation unit that calculates a radiation rate of the back surface of the substrate from an output of the radiation sensor and the output of the radiation rate sensor, a radiation sensor for the support unit that directly receives radiation light from the substrate support unit, and the radiation Optical sensor and radiation The temperature of the substrate is calculated according to the output result of the calculation unit, the temperature calculation unit calculates the temperature of the substrate support unit according to the output result of the radiation light sensor for the support unit, and is calculated by the temperature calculation unit. A rapid thermal processing apparatus comprising a control unit that controls irradiation intensity of the lamp unit for the substrate and the lamp unit for the support unit according to the temperature,
The control unit controls the irradiation intensity of the substrate lamp unit according to the temperature of the substrate calculated by the temperature calculation unit, and the control unit controls the irradiation intensity of the substrate support unit calculated by the temperature calculation unit. Control the irradiation intensity of the lamp section for the support section, and correct the control parameters of the irradiation intensity of the lamp section for the substrate and the lamp section for the support section based on the reflectance of the substrate surface measured in advance. A rapid thermal processing apparatus characterized by that.   Before the substrate is heated in the processing chamber and reaches a desired target temperature, the reflectance of the substrate surface is measured in the processing chamber in advance, and the control unit is based on the measured reflectance. The rapid thermal processing apparatus according to claim 1, wherein the lamp irradiation intensity is corrected.   When the substrate is heated in the processing chamber and held at a first temperature lower than a desired target temperature for a predetermined time, a lamp irradiation intensity value necessary for maintaining the first temperature is measured in advance and the control is performed. 5. The rapid thermal processing apparatus according to claim 1, wherein the unit corrects the lamp irradiation intensity based on the measured lamp irradiation intensity value.   5. The rapid adjustment according to claim 1, wherein the control unit corrects the lamp irradiation intensity based on a correlation between a reflectance of the substrate surface measured in advance and a maximum temperature error. 6. Heat treatment equipment.   A processing chamber for heating a semiconductor substrate; a substrate support portion disposed in the processing chamber for supporting the substrate; and a lamp portion for irradiating and heating the surface side of the substrate supported by the substrate support portion; A radiation light sensor disposed on the back side of the substrate for receiving radiation light from the substrate, a temperature calculation unit for calculating the temperature of the substrate according to an output result of the radiation light sensor, and the temperature calculation unit A method of manufacturing a semiconductor device that performs rapid thermal processing of the substrate using a rapid thermal processing apparatus including a control unit that controls irradiation intensity of the lamp unit according to the temperature of the substrate calculated by And a method of correcting a control parameter of the irradiation intensity of the lamp unit based on the reflectance of the substrate surface. A processing chamber for heating a semiconductor substrate, a substrate support portion disposed in the processing chamber for supporting the substrate, and a substrate lamp for heating the surface side of the substrate supported by the substrate support portion by light irradiation A support portion lamp portion that irradiates and heats the substrate support portion with light, a reflector that is disposed on the back surface side of the substrate and reflects radiation light from the back surface of the substrate, and on the back surface side of the substrate A plurality of radiation sensors that receive radiation light from the back surface of the substrate that is disposed and multiple-reflected by the reflector, and a radiation rate sensor that directly receives radiation light from the back surface of the substrate; A radiation rate calculation unit that calculates a radiation rate of the back surface of the substrate from an output of the radiation sensor and the output of the radiation rate sensor, a radiation sensor for the support unit that directly receives radiation light from the substrate support unit, and the radiation Optical sensor and radiation The temperature of the substrate is calculated according to the output result of the calculation unit, the temperature calculation unit calculates the temperature of the substrate support unit according to the output result of the radiation light sensor for the support unit, and is calculated by the temperature calculation unit. A method of manufacturing a semiconductor device that performs rapid thermal processing of the substrate using a rapid thermal processing apparatus including a control unit that controls irradiation intensity of the lamp unit for the substrate and the lamp unit for the support unit according to a temperature,
The control unit controls the irradiation intensity of the substrate lamp unit according to the temperature of the substrate calculated by the temperature calculation unit;
A procedure for controlling the irradiation intensity of the lamp unit for the support unit according to the calculated temperature of the substrate support unit;
A method of correcting each of the irradiation intensity control parameters of the substrate lamp unit and the support lamp unit based on the reflectance of the substrate surface measured in advance. . 10. A semiconductor device comprising a transistor including an impurity diffusion layer formed by performing rapid thermal processing of the semiconductor substrate after ion implantation of impurities into an element active region of the semiconductor substrate, The semiconductor device is characterized in that the semiconductor substrate is subjected to rapid thermal processing using the manufacturing method, and the impurity diffusion layer is formed.

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