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JP2006067375A - Antenna module - Google Patents

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JP2006067375A
JP2006067375A JP2004249079A JP2004249079A JP2006067375A JP 2006067375 A JP2006067375 A JP 2006067375A JP 2004249079 A JP2004249079 A JP 2004249079A JP 2004249079 A JP2004249079 A JP 2004249079A JP 2006067375 A JP2006067375 A JP 2006067375A
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antenna
substrate
module
frequency
signal
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Naoyuki Shino
直行 志野
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6616—Vertical connections, e.g. vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15192—Resurf arrangement of the internal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

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Abstract

<P>PROBLEM TO BE SOLVED: To provide an antenna module with an excellent antenna characteristic wherein crosstalks between wires and malfunction of circuits are reduced, by reducing the effect of the generation of spurious radiation on the antenna module. <P>SOLUTION: The antenna module is provided with an antenna board 3 wherein one side or inside of an insulation board is provided with a single or a plurality of antenna elements 6, and the other side of the insulation board is mounted with a semiconductor element connected to the antenna elements 6; and a module board 4 mounted with the antenna board 3, and a frequency f<SB>0</SB>differs from the frequency f<SB>1</SB>, in particular, the relation 0.5×f<SB>0</SB>≥f<SB>1</SB>holds between the f<SB>0</SB>and f<SB>1</SB>, wherein f<SB>0</SB>is the frequency of the signal emitted from or received by the antenna elements 6, and f<SB>1</SB>is the highest frequency of the signal communicated between the antenna board 3 and the module board 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、マイクロ波帯やミリ波帯等の高周波信号を送受信しその信号を加工処理する高周波回路を含むアンテナモジュールに関するものである。   The present invention relates to an antenna module including a high-frequency circuit that transmits and receives a high-frequency signal such as a microwave band and a millimeter-wave band and processes the signal.

昨今、マイクロ波は携帯電話に代表されるような無線機器用の搬送波として多大に利用されてきているが、現在は、携帯電話に限らず、無線ＬＡＮやＷｉｒｅｌｅｓｓ ＵＳＢなど高容量データ通信の手段としても用いられ研究開発が進められている。またマイクロ波よりも高い周波数帯である準ミリ波帯では衛星通信やｐｏｉｎｔ ｔｏ ｐｏｉｎｔ、３０ＧＨｚ以上のミリ波領域では超高速無線ＬＡＮや車間レーダー等の研究開発が盛んに進められ実用化されつつある。   In recent years, microwaves have been used extensively as a carrier wave for wireless devices such as mobile phones. Currently, however, they are not limited to mobile phones, but as a means for high-capacity data communication such as wireless LAN and wireless USB. R & D is underway. Also, research and development such as ultra-high-speed wireless LAN and inter-vehicle radar are being actively promoted and put into practical use in satellite communications and point-to-point in the quasi-millimeter wave band, which is a higher frequency band than microwaves, and in the millimeter-wave region above 30 GHz. .

これら高周波信号を送受信するためには、モジュール基板上の伝送線路と空間のインピーダンス整合をするためにアンテナが必要である。一般に、アンテナは、遠距離と通信したい場合や通信電力を低減させたい場合、あるいはレーダーの角度分解能を向上させたい場合など、高利得あるいは狭ビームが要求されることが多い。このような高利得、狭ビームを得るための方法としては、モジュール基板の表面にアンテナ素子を具備するアンテナ基板を実装し、さらにそのアンテナ素子の放射側に誘電体レンズを設けることによって、アンテナ素子の小型化を図ると同時に基板の面積を小さくすることが特許文献１、特許文献２にて提案されている。
特開平１０−３４１１０８号 ＷＯ００／４８２６９号 In order to transmit and receive these high-frequency signals, an antenna is required for impedance matching between the transmission line on the module substrate and space. In general, the antenna is often required to have a high gain or a narrow beam when communicating with a long distance, when it is desired to reduce communication power, or when it is desired to improve the angular resolution of the radar. As a method for obtaining such a high gain and narrow beam, an antenna element having an antenna element is mounted on the surface of the module substrate, and a dielectric lens is provided on the radiation side of the antenna element, thereby providing an antenna element. Patent Document 1 and Patent Document 2 propose to reduce the area of the substrate while reducing the size of the substrate.
JP 10-341108 A WO00 / 48269

しかし、従来のアンテナ基板を具備するアンテナモジュールにおいては、モジュール基板からアンテナ基板とモジュール基板の接続の不整合性、回路の誤動作や混信などによる不要放射、あるいはアンテナ基板に実装された半導体素子から不要放射が発生しやすく、その結果、それら不要放射が、アンテナ素子による利得やサイドロ−ブなどに影響を及ぼすことがあった。特に、アンテナ素子の放射側に誘電体レンズを設けた場合には、一次放射器としてのアンテナ基板における放射パターンがレンズを介した最終の放射パターンに与える影響が大きいために、アンテナ基板周辺からの不要放射に対する対策が必要であった。   However, in an antenna module equipped with a conventional antenna board, it is unnecessary from the module board to the antenna board and the module board due to inconsistency in connection, unnecessary radiation due to circuit malfunction or interference, or from the semiconductor elements mounted on the antenna board. Radiation is likely to occur, and as a result, the unnecessary radiation may affect the gain and side lobe of the antenna element. In particular, when a dielectric lens is provided on the radiation side of the antenna element, the radiation pattern on the antenna substrate as the primary radiator has a great influence on the final radiation pattern via the lens, Measures against unnecessary radiation were necessary.

従って、本発明は、このようなアンテナモジュールにおける不要放射の発生に対する影響を低減し、優れたアンテナ特性を有し、配線間の混信や回路の誤動作を低減したアンテナモジュールを提供することを目的とするものである。   Accordingly, an object of the present invention is to provide an antenna module that reduces the influence on the occurrence of unnecessary radiation in such an antenna module, has excellent antenna characteristics, and reduces interference between wires and circuit malfunction. To do.

本発明のアンテナモジュールは、絶縁基板の一方の表面あるいは内部に単一または複数のアンテナ素子が設けられ、前記絶縁基板の他方の表面に前記アンテナ素子と接続された半導体素子を搭載してなるアンテナ基板と、該アンテナ基板を実装してなるモジュール基板とを具備するアンテナモジュールであって、前記アンテナ基板内部の、前記アンテナ素子と前記半導体素子とを隔てる位置に導体層を形成してなり、該導体層の面積が、アンテナ基板の面積の６０％以上を占めることを特徴とする。   The antenna module of the present invention is an antenna in which a single or a plurality of antenna elements are provided on one surface or inside of an insulating substrate, and a semiconductor element connected to the antenna element is mounted on the other surface of the insulating substrate. An antenna module comprising a substrate and a module substrate on which the antenna substrate is mounted, wherein a conductor layer is formed in the antenna substrate at a position separating the antenna element and the semiconductor element, The area of the conductor layer occupies 60% or more of the area of the antenna substrate.

特に、記アンテナ素子が放射あるいは受信する信号の周波数をｆ０、前記アンテナ基板と前記モジュール基板の間でやり取りされる信号の最大周波数をｆ１としたとき、ｆ０とｆ１が異なることが望ましい。特に、前記ｆ０とｆ１が、０．５×ｆ０≧ｆ１の関係にあることが望ましい。 In particular, when the frequency of a signal radiated or received by the antenna element is f 0 and the maximum frequency of a signal exchanged between the antenna substrate and the module substrate is f 1 , f 0 and f 1 may be different. desirable. In particular, it is desirable that f 0 and f 1 have a relationship of 0.5 × f 0 ≧ f 1 .

また、本発明によれば、アンテナ素子の放射側に誘電体レンズを設ける場合に特に有利である。   The present invention is particularly advantageous when a dielectric lens is provided on the radiation side of the antenna element.

本発明のアンテナモジュールによれば、上記構成によって２次実装基板すなわちモジュール基板における回路の誤動作や混信などによる不要放射による影響を抑制し、アンテナ入力抵抗を安定させ、アンテナ基板内に設けた半導体素子などの高周波回路を正常に動作させることができる。   According to the antenna module of the present invention, the above-described configuration suppresses the influence of unnecessary radiation caused by circuit malfunction or interference on the secondary mounting board, that is, the module board, stabilizes the antenna input resistance, and provides the semiconductor element provided in the antenna board. The high frequency circuit such as can be operated normally.

即ち、絶縁基板の一方の表面あるいは内部に単一または複数のアンテナ素子を設け、他方の表面に前記アンテナ素子と接続される半導体素子を搭載することにより、アンテナ基板の小型化が図られ、さらにアンテナと半導体素子が同一平面に無いために、半導体素子からの不要放射がアンテナ放射パターンに影響を及ぼすことが無くなり、放射パターン形状の悪化や混信を防ぐことが可能となり、また逆に、アンテナ素子からの放射が半導体素子の誤動作を引き起こすことも無くなる。   That is, by providing a single or a plurality of antenna elements on one surface or inside of the insulating substrate and mounting a semiconductor element connected to the antenna element on the other surface, the antenna substrate can be reduced in size, Since the antenna and the semiconductor element are not on the same plane, unnecessary radiation from the semiconductor element does not affect the antenna radiation pattern, and it is possible to prevent deterioration of the radiation pattern shape and interference, and conversely, the antenna element. The radiation from the semiconductor device does not cause malfunction of the semiconductor element.

また、前記アンテナ素子と前記半導体素子を隔てるように、前記アンテナ基板内部に設けた導体層面積が、アンテナ基板の面積の６０％以上とすることにより、半導体素子から生じた不要放射のアンテナ素子への影響、また逆にアンテナ素子からの放射の半導体素子への影響を抑制でき、混信や誤動作を減少させエラーレイトを下げることができる。   Further, by setting the area of the conductor layer provided inside the antenna substrate so as to separate the antenna element and the semiconductor element to 60% or more of the area of the antenna substrate, the antenna element for unnecessary radiation generated from the semiconductor element can be obtained. Inversely, the influence of radiation from the antenna element on the semiconductor element can be suppressed, interference and malfunction can be reduced, and the error rate can be lowered.

さらに、アンテナ基板とモジュール基板との間でやり取りされる信号の周波数ｆ１がアンテナが放射する信号の周波数ｆ０と異ならしめることによって、モジュール基板とアンテナ基板の信号接続部や、モジュール基板内からの不要放射と、アンテナ素子から放射される信号間の干渉が無くなり、混信や回路の誤動作などが抑制できエラーレイトを下げることができる。なお、ここで言うｆ１は、アンテナ基板とモジュール基板の間でやり取りされる信号のうち最も高い信号の周波数である。特に、０．５×ｆ０≧ｆ１とすることにより、より混信や誤動作を防ぐことができエラーレイトが下がる。 Further, by making the frequency f 1 of the signal exchanged between the antenna substrate and the module substrate different from the frequency f 0 of the signal radiated by the antenna, the signal connection portion between the module substrate and the antenna substrate, or from within the module substrate The interference between the unnecessary radiation and the signal radiated from the antenna element is eliminated, and interference and circuit malfunction can be suppressed and the error rate can be lowered. Incidentally, f 1 here is the frequency of the highest signal of the signals exchanged between the antenna substrate and the module substrate. In particular, by setting 0.5 × f 0 ≧ f 1 , interference and malfunction can be further prevented and the error rate is lowered.

かかる本発明は、アンテナ基板とモジュール基板の間でやり取りする信号周波数を低下させることにつながり、一般的にロスの大きい高周波を低周波に変換することでロスが低減しシステムとしても効率が上がり、また信号レベルの低下が防げるためにエラーレイトも低下させることが可能となる。   The present invention leads to lowering the signal frequency exchanged between the antenna substrate and the module substrate, generally reducing the loss by converting a high frequency loss to a low frequency, increasing the efficiency of the system, In addition, since the signal level can be prevented from being lowered, the error rate can also be lowered.

以下、本発明のアンテナモジュールの構成について図面を参照しながら説明する。図１に本発明の実施形態の一例であるアンテナモジュール１の側面図を示す。本発明のアンテナモジュールは、誘電体レンズ２、アンテナ基板３、モジュール基板４から構成されており、誘電体レンズ２は支持体５をもってモジュール基板４に固定されている。
アンテナ基板３の一方の面には、マイクロストリップアンテナからなるアンテナ素子６が形成されており、他方の面に、アンテナ素子から放射あるいは受信される信号の処理を行う半導体素子７が実装されており、基板内部にはグランド層９が形成されており、半導体素子７は、ビア導体１０を介して前記アンテナ素子６と接続されている。半導体素子７は、アンテナ基板３の他方の面に設けられたキャビティ内に収納され、キャップ８で封止され、湿気やゴミの侵入を防止している。なお、半導体素子の封止の形態は、キャビティ内への収納のみならず、封止樹脂中に埋設してもよい。 Hereinafter, the configuration of the antenna module of the present invention will be described with reference to the drawings. FIG. 1 shows a side view of an antenna module 1 which is an example of an embodiment of the present invention. The antenna module of the present invention includes a dielectric lens 2, an antenna substrate 3, and a module substrate 4, and the dielectric lens 2 is fixed to the module substrate 4 with a support 5 .
An antenna element 6 made of a microstrip antenna is formed on one surface of the antenna substrate 3, and a semiconductor element 7 for processing a signal radiated or received from the antenna element is mounted on the other surface. A ground layer 9 is formed inside the substrate, and the semiconductor element 7 is connected to the antenna element 6 through a via conductor 10. The semiconductor element 7 is housed in a cavity provided on the other surface of the antenna substrate 3 and sealed with a cap 8 to prevent moisture and dust from entering. The semiconductor element may be sealed not only in the cavity but also embedded in the sealing resin.

アンテナ素子６と、これを制御する半導体素子７を１つのアンテナ基板に設ける場合、アンテナ素子６から放射された信号が半導体素子に影響を与え半導体素子の誤動作をおこす。また逆に半導体素子からの不要放射がアンテナ素子の放射パターンに影響を与え放射パターンの崩れやサイドローブの上昇、利得の低下などが発生してしまう。また、さらにアンテナ素子と半導体素子が同一表面にある場合、基板の面積が大きくなるという欠点もある。そこで、本発明によれば、半導体素子７をアンテナ素子３が形成された面とは反対側の面に形成することによって、半導体素子の誤動作やサイドローブの上昇や利得低下などのアンテナ放射パターンの劣化を防止することができ、またアンテナ基板を小型化できる。   When the antenna element 6 and the semiconductor element 7 for controlling the antenna element 6 are provided on one antenna substrate, a signal radiated from the antenna element 6 affects the semiconductor element and causes a malfunction of the semiconductor element. On the contrary, unnecessary radiation from the semiconductor element affects the radiation pattern of the antenna element, resulting in a collapse of the radiation pattern, an increase in side lobe, and a decrease in gain. Further, when the antenna element and the semiconductor element are on the same surface, there is a disadvantage that the area of the substrate becomes large. Therefore, according to the present invention, by forming the semiconductor element 7 on the surface opposite to the surface on which the antenna element 3 is formed, the antenna radiation pattern such as malfunction of the semiconductor element, an increase in side lobe, and a decrease in gain is obtained. Deterioration can be prevented and the antenna substrate can be miniaturized.

また、図１では、半導体素子７が１つしか搭載されていないが、この半導体素子としては、増幅器やフィルター、変復調器、信号処理素子、逓倍器などの複数の半導体素子を搭載しても問題は無い。なおその場合においては、これら素子のうち、アンテナ素子への影響の大きい半導体素子を、アンテナ素子６を形成した面とは反対側の面に形成すればよいが、すべての半導体素子を反対側の面に形成することが最も望ましい。   In FIG. 1, only one semiconductor element 7 is mounted. However, there is a problem even if a plurality of semiconductor elements such as an amplifier, a filter, a modem, a signal processing element, and a multiplier are mounted as this semiconductor element. There is no. In this case, among these elements, a semiconductor element having a large influence on the antenna element may be formed on the surface opposite to the surface on which the antenna element 6 is formed. It is most desirable to form on the surface.

また、本発明によれば、アンテナ素子３が放射あるいは受信する信号の周波数をｆ０、アンテナ基板３とモジュール基板４の間でやり取りされる信号の最大周波数をｆ１としたとき、ｆ０とｆ１を異ならしめることによって、モジュール基板４における回路の誤動作や混信を抑制し、アンテナ入力抵抗を安定させ、また、アンテナ基板３に実装された半導体素子７の高周波回路を正常に動作させることができる。 Further, according to the present invention, when the frequency of a signal radiated or received by the antenna element 3 is f 0 , and the maximum frequency of a signal exchanged between the antenna substrate 3 and the module substrate 4 is f 1 , f 0 By making f 1 different, the malfunction and interference of the circuit in the module substrate 4 can be suppressed, the antenna input resistance can be stabilized, and the high-frequency circuit of the semiconductor element 7 mounted on the antenna substrate 3 can be operated normally. it can.

このように、アンテナ素子６が送受信する信号の周波数ｆ０と、アンテナ基板３とモジュール基板４がやり取りする周波数ｆ１を異ならしめるための１つの方法としては、図２に示す回路構成を用いる方法がある。すなわち図２のように、アンテナ基板に実装した周波数変換器１１と局部発振器１２をアンテナ素子１０に接続し回路構成することで、アンテナ素子で送受信する信号をアップコンバートあるいはダウンコンバート可能となる。なお、局部発振器１２に直接信号を入れて変調する場合には周波数変換器１１は不要となる。発振器としては、低周波の信号を局部発振器で発振し、その信号を逓倍器により高周波に変化させ所望の周波数の局部信号を作る方法などがあり、ディスクリートで形成した局部発振器、逓倍器を接続して形成できる。あるいは逓倍器を用いず直接、所望の周波数の局部信号を発生させる発振器を用いても良く、それについてはＭＭＩＣで電圧制御型発振器を構成する方法や、ガンダイオードを用いる方法などがある。 As described above, as one method for making the frequency f 0 of the signal transmitted and received by the antenna element 6 different from the frequency f 1 of the antenna substrate 3 and the module substrate 4 exchanged, a method using the circuit configuration shown in FIG. There is. That is, as shown in FIG. 2, by connecting the frequency converter 11 and the local oscillator 12 mounted on the antenna substrate to the antenna element 10 to form a circuit, signals transmitted and received by the antenna element can be up-converted or down-converted. Note that the frequency converter 11 is not required when a signal is directly input to the local oscillator 12 for modulation. As an oscillator, there is a method of oscillating a low frequency signal with a local oscillator and changing the signal to a high frequency with a multiplier to create a local signal with a desired frequency. Can be formed. Alternatively, an oscillator that directly generates a local signal of a desired frequency may be used without using a multiplier, and there are a method of configuring a voltage-controlled oscillator with MMIC, a method of using a Gunn diode, and the like.

その中でも、構成が最も簡単で容易にシステムの構成が可能である点で、ＭＭＩＣで電圧制御型発振器を構成する方法が好ましい。ＭＭＩＣに多くの機能を持たせた素子を用いることが好ましい。ディスクリートで、周波数変換器、逓倍器を形成し接続する場合に比べて、半導体素子数が少なくなり実装工程が簡略化し製造コストを低減できる。   Among them, the method of configuring the voltage controlled oscillator with MMIC is preferable in that the configuration is the simplest and the system can be configured easily. It is preferable to use an element provided with many functions in the MMIC. Compared to the case where discrete frequency converters and multipliers are formed and connected, the number of semiconductor elements is reduced, the mounting process is simplified, and the manufacturing cost can be reduced.

特に、本発明によれば、前記ｆ０とｆ１が、０．５×ｆ０≧ｆ１であることが望ましい。これは、ｆ０とｆ１が近い場合、混信を起こしやすいことを意味している。例えばアンテナが送受信する信号は、信号情報を搬送波に載せるため一般的に周波数変調をかけ、そのため信号周波数にある程度の幅が発生する。それによりｆ０とｆ１が近い場合、周波数が同じ領域での重なり成分が生じ混信が発生しやすい。また０．５×ｆ０≧ｆ１とすることで、ｆ１の２次高調波成分による影響が抑制できる。そのため、０．５×ｆ０≧ｆ１とすることによって、その混信を減少させることが可能となる。望ましくは、０．２×ｆ０≧ｆ１であることが望ましく、これによりｆ１の５次高調波成分の影響も抑制できる。 In particular, according to the present invention, it is desirable that the f 0 and f 1 satisfy 0.5 × f 0 ≧ f 1 . This means that interference is likely to occur when f 0 and f 1 are close. For example, a signal transmitted and received by an antenna is generally subjected to frequency modulation in order to put signal information on a carrier wave, so that a certain width is generated in the signal frequency. As a result, when f 0 and f 1 are close to each other, an overlapping component occurs in the same frequency region, and interference is likely to occur. Further, by setting 0.5 × f 0 ≧ f 1 , the influence of the second harmonic component of f 1 can be suppressed. Therefore, the interference can be reduced by setting 0.5 × f 0 ≧ f 1 . Desirably, 0.2 × f 0 ≧ f 1 is desirable, whereby the influence of the fifth harmonic component of f 1 can also be suppressed.

図１ではアンテナ素子として、１素子のマイクロストリップアンテナを図示しているが、この素子数は、２素子以上でもよく、複数のアンテナ素子をアレイ状に配置したアレイアンテナであってもよい。   In FIG. 1, a single-element microstrip antenna is shown as an antenna element, but the number of elements may be two or more, or an array antenna in which a plurality of antenna elements are arranged in an array.

また、アンテナ素子として、図１のマイクロストリップアンテナ以外に、ボウタイアンテナ、スロットアンテナなどの平面アンテナ、ヘリカルアンテナ、ダイポールアンテナ、逆Ｌアンテナ、逆Ｆアンテナでも特に問題はない。また、アンテナ素子６は、必ずしも基板表面に形成されている必要はなく、基板の内部に形成されていてもよい。特に、アンテナ素子の保護の点からは、アンテナ素子６の表面に樹脂製またはセラミック製の絶縁性保護層を形成することが望ましい。その他、アンテナ素子としては、誘電体共振器アンテナや、特開平１１−４６１１４号に記載されるような、積層型導波管を利用したアンテナなども利用できる。   In addition to the microstrip antenna shown in FIG. 1, there is no particular problem with a planar antenna such as a bow tie antenna or a slot antenna, a helical antenna, a dipole antenna, an inverted L antenna, or an inverted F antenna. Further, the antenna element 6 is not necessarily formed on the substrate surface, and may be formed inside the substrate. In particular, from the viewpoint of protection of the antenna element, it is desirable to form an insulating protective layer made of resin or ceramic on the surface of the antenna element 6. In addition, as the antenna element, a dielectric resonator antenna, an antenna using a laminated waveguide as described in JP-A-11-46114, and the like can be used.

また、図１では、アンテナ素子の上部に所定距離をとって、誘電体レンズ２を配置しているが、この誘電体レンズ２は、必ずしも必要ではないが、誘電体レンズ２を具備する場合、アンテナ素子の放射パターンの微小な変化が、レンズを介した最終の放射パターンに与える影響が顕著であり、本発明による作用は特に有効的である。なお、誘電体レンズ２は、図１によれば、モジュール基板４に固定されているが、この誘電体レンズ２の固定先としては、これに限られず、他の筐体などに固定し、その筐体にモジュール基板４を固定してもなんら問題は無い。   In FIG. 1, the dielectric lens 2 is disposed at a predetermined distance above the antenna element. However, the dielectric lens 2 is not always necessary, but when the dielectric lens 2 is provided, The effect of the minute change in the radiation pattern of the antenna element on the final radiation pattern via the lens is significant, and the action according to the present invention is particularly effective. The dielectric lens 2 is fixed to the module substrate 4 according to FIG. 1, but the fixing destination of the dielectric lens 2 is not limited to this, and is fixed to another housing or the like. There is no problem even if the module substrate 4 is fixed to the housing.

なお、アンテナ基板３において、アンテナ素子６と半導体素子７を接続するためには一般的に、マイクロストリップライン、ストリップライン、ビア、コプレーナライン、スロットライン、積層型導波管などの周知の高周波線路を用いることができるが、特に線路を特定する必要は無い。線路の引き回し容易性から考えれば、マイクロストリップライン、ストリップラインが好ましく、また低伝送損失の観点からは積層型導波管が好ましい。またＶＩＡの代わりに信号の損失低減のためにスロットをもちいて電磁的に接続し信号伝送してもなんら問題はない。   In the antenna substrate 3, in order to connect the antenna element 6 and the semiconductor element 7, generally known high-frequency lines such as a microstrip line, a strip line, a via, a coplanar line, a slot line, and a laminated waveguide are used. However, it is not particularly necessary to specify the line. Considering the ease of routing the line, a microstrip line and a strip line are preferable, and a laminated waveguide is preferable from the viewpoint of low transmission loss. Further, there is no problem even if signals are transmitted by electromagnetic connection using slots for reducing signal loss instead of VIA.

なお、図１のアンテナモジュールでは、モジュール基板４とアンテナ基板３を電気的に接続するのに、アンテナ基板３をモジュール基板４に対して、ＢＧＡタイプで、アンテナ基板３の裏面の接続パッド１１に取り付けられた複数の半田ボール１２を介してモジュール基板１の回路パターン１３に実装されているが、アンテナ基板３の実装形態はこれに限られることがなく、たとえば半田ボールを用いず、アンテナ基板３の底面に形成された接続パッド１１とモジュール基板１の回路パターン１３に対して、直接半田で接続するＬＧＡタイプや、金属ピンを用いるＰＧＡタイプ、あるいはアンテナ基板に形成された接続パッドとモジュール基板側の回路パターンとをワイヤを用いて接続するものであってもよい。この中でも、ＢＧＡ、ＬＧＡは、高密度に端子を形成することができる点で有利である。   In the antenna module of FIG. 1, in order to electrically connect the module substrate 4 and the antenna substrate 3, the antenna substrate 3 is BGA type with respect to the module substrate 4 and is connected to the connection pads 11 on the back surface of the antenna substrate 3. Although mounted on the circuit pattern 13 of the module substrate 1 via a plurality of attached solder balls 12, the mounting form of the antenna substrate 3 is not limited to this. For example, the antenna substrate 3 is not used without using solder balls. The connection pad 11 formed on the bottom surface of the module and the circuit pattern 13 of the module substrate 1 are directly connected to the LGA type by solder, the PGA type using metal pins, or the connection pad formed on the antenna substrate and the module substrate side. The circuit pattern may be connected using a wire. Among these, BGA and LGA are advantageous in that terminals can be formed at high density.

また、アンテナ基板３は、表面実装タイプではなく、モジュール基板４表面に接着剤で固定し、アンテナ基板３の表面に形成された電極と、モジュール基板の電極とを金リボンや金のワイヤーボンディングで接続した構造であってもよい。ただワイヤーボンディングは寄生インダクタンスや量産性の課題などを有することから、前述の表面実装型がローコストで特性安定性も優れており好ましい。   The antenna substrate 3 is not a surface mount type, but is fixed to the surface of the module substrate 4 with an adhesive, and the electrode formed on the surface of the antenna substrate 3 and the electrode of the module substrate are bonded by a gold ribbon or gold wire bonding. A connected structure may be used. However, since wire bonding has problems such as parasitic inductance and mass productivity, the above-described surface mounting type is preferable because it is low-cost and has excellent characteristic stability.

アンテナ基板３を構成する材料としては、半導体素子７の実装信頼性を考えればセラミックスが好ましく、またコストの点から考えれば少なくとも樹脂を含有する有機材料からななる基板が好ましい。セラミックスを用いる場合、材料は一般的にアルミナ、窒化アルミニウム、マグネシアなどを主成分としたセラミックスや、ガラスセラミックスなどの１０００℃以下で焼成可能な低温焼成セラミックスが好適に挙げられる。この中でも、高周波では伝送線路における損失が大きく、その損失を抑えるために導体層の抵抗を低くすることが求められ、かかる点から銅や銀導体を用いることができる低温焼成セラミックスまたは有機多層基板が好ましく、最適には誘電損失が低い低温焼成セラミックスがよい。なお、有機基板の中では、フッ素系樹脂が好ましい。   As a material constituting the antenna substrate 3, ceramics are preferable in view of mounting reliability of the semiconductor element 7, and a substrate made of an organic material containing at least a resin is preferable from the viewpoint of cost. In the case of using ceramics, examples of suitable materials generally include ceramics mainly composed of alumina, aluminum nitride, magnesia, etc., and low-temperature fired ceramics that can be fired at 1000 ° C. or less, such as glass ceramics. Among these, the loss in the transmission line is large at high frequencies, and it is required to reduce the resistance of the conductor layer in order to suppress the loss. From this point, low-temperature fired ceramics or organic multilayer substrates that can use copper or silver conductors are required. Preferably, low-temperature fired ceramics with low dielectric loss are optimal. In the organic substrate, a fluorine resin is preferable.

モジュール基板４を構成する材料としても、アンテナ基板３と同様に、アルミナや窒化アルミニウム、マグネシアなどを主成分としたセラミックスや低温焼成セラミックス、有機多層基板など用いることができ特に材料を限定するものでは無い。しかし製造コストの点から考えれば、ＦＲ−４やＦＲ−５などのガラスーエポキシ樹脂の安価な有機基板が好ましい。   As the material constituting the module substrate 4, similarly to the antenna substrate 3, ceramics mainly composed of alumina, aluminum nitride, magnesia, low-temperature fired ceramics, organic multilayer substrates, and the like can be used. No. However, from the viewpoint of manufacturing cost, an inexpensive organic substrate of glass-epoxy resin such as FR-4 or FR-5 is preferable.

本発明のアンテナモジュールについてアンテナモジュールとしての通信特性を評価するために、実際にシステムを組んでエラーレイトの調査を行った。   In order to evaluate the communication characteristics of the antenna module of the present invention as an antenna module, an error rate was investigated by actually assembling the system.

アンテナ基板は、４０ｍｍ×４０ｍｍ×厚み３．０ｍｍ、誘電率４．９のホウ珪酸ガラスを主体とする低温焼成セラミックスからなる絶縁基板に対して、その表面に、マイクロストリップアンテナを１素子形成しそれを１次放射器とした。マイクロストリップアンテナおよびアンテナ基板における高周波線路などはすべて、銅メタライズを用いて、絶縁基板と９００℃で同時焼成して形成した。   The antenna substrate is formed by forming one microstrip antenna on the surface of an insulating substrate made of a low-temperature fired ceramic mainly composed of borosilicate glass having a size of 40 mm × 40 mm × thickness 3.0 mm and a dielectric constant of 4.9. Was a primary radiator. The microstrip antenna and the high-frequency line in the antenna substrate were all formed by co-firing with an insulating substrate at 900 ° C. using copper metallization.

また、アンテナ基板のアンテナ素子形成面とは反対の面に、図１に示したようなキャビティを設け、このキャビティ内に半導体素子をフリップチップ実装した。また一部の半導体についてはアンテナ素子形成面と同一平面に形成した。   Further, a cavity as shown in FIG. 1 was provided on the surface opposite to the antenna element formation surface of the antenna substrate, and the semiconductor element was flip-chip mounted in this cavity. Some semiconductors were formed on the same plane as the antenna element formation surface.

一方、モジュール基板としては、ガラス−エポキシ樹脂からなる複合絶縁体からなる絶縁基板の表面に銅による導体パターンを形成したものを準備し、アンテナ基板をボールグリッドアレイによって表面実装した。また、アンテナ素子の放射面の上に、誘電率５．０のホウ珪酸ガラスを主体とするセラミックスで形成した誘電体レンズを配置した。   On the other hand, the module substrate was prepared by forming a copper conductive pattern on the surface of an insulating substrate made of a composite insulator made of glass-epoxy resin, and the antenna substrate was surface-mounted by a ball grid array. In addition, a dielectric lens formed of ceramics mainly composed of borosilicate glass having a dielectric constant of 5.0 was disposed on the radiation surface of the antenna element.

また、比較例として、アンテナ素子と半導体素子とを同じ面に形成したアンテナ基板を作製し、上記と同様にしてモジュール基板表面に実装し、比較用のアンテナモジュールＡを作製した。この比較用のアンテナモジュールＡにおけるエラーレイトを「１」として、本発明品を含む種々のモジュールのエラーレイトを測定した。   In addition, as a comparative example, an antenna substrate in which an antenna element and a semiconductor element were formed on the same surface was manufactured and mounted on the surface of the module substrate in the same manner as described above to manufacture a comparative antenna module A. The error rate of the antenna module A for comparison was set to “1”, and the error rates of various modules including the product of the present invention were measured.

なお、エラーレイトの測定にあたっては、アンテナ素子からの放射信号（搬送波）の周波数（ｆ０）は６３ＧＨｚとした。また、アンテナ基板の表面には、アンテナ素子以外に、増幅器、局部発振器、逓倍器、フィルターを基板表面に実装した。アンテナモジュールに対向する形で、信号を放射するホーンアンテナを設置し、ホーンアンテナから放射した信号をアンテナモジュールで受信し復調して、オリジナルな信号と比較してエラーレイトを評価した。 In measuring the error rate, the frequency (f 0 ) of the radiation signal (carrier wave) from the antenna element was 63 GHz. In addition to the antenna element, an amplifier, a local oscillator, a multiplier, and a filter were mounted on the surface of the antenna substrate. A horn antenna that radiates a signal is installed opposite to the antenna module, the signal radiated from the horn antenna is received and demodulated by the antenna module, and the error rate is evaluated by comparing with the original signal.

また、アンテナ素子は変更せず、半導体素子の回路構成を変更し局部信号周波数を変化させることにより、表１に示すようにアンテナ基板とモジュール基板との間の信号周波数を種々変更し、エラーレイトを測定した。その結果を表１に示す。

Figure 2006067375
In addition, by changing the circuit configuration of the semiconductor element and changing the local signal frequency without changing the antenna element, various signal frequencies between the antenna board and the module board are changed as shown in Table 1, and the error rate is changed. Was measured. The results are shown in Table 1.
Figure 2006067375

表１に示すとおり、アンテナ素子での受信または送信信号の周波数から、アンテナ基板とモジュール基板との間の信号周波数ｆ１をｆ０と異ならしめることによって、エラーレイトを改善できる。４８ＧＨｚのＮｏ．４では、半導体素子のうちローノイズアンプをアンテナ素子と同一面に形成したが、Ｎｏ．１との比較からわかるようにエラーレイトに改善が見られていることが分かる。しかしながらＮｏ．５に比べればエラーレイトが高く、半導体素子はアンテナ素子の形成面の反対面に設けることが好ましい。アンテナ基板とモジュール基板間の信号は低下すればするほどエラーレイトが低下し、とくにアンテナ素子で受信する搬送波の信号周波数６３ＧＨｚの半分以下である３０ＧＨｚでエラーレイト０．５以下を達成し、より好ましい。また６３ＧＨｚの１／５以下である１０ＧＨｚでは０．４以下となり、さらに好ましい。 As shown in Table 1, the error rate can be improved by making the signal frequency f 1 between the antenna substrate and the module substrate different from f 0 based on the frequency of the reception or transmission signal at the antenna element. 48 GHz No. In No. 4, the low noise amplifier of the semiconductor elements is formed on the same surface as the antenna element. It can be seen from the comparison with 1 that the error rate is improved. However, no. Compared to 5, the error rate is high, and the semiconductor element is preferably provided on the opposite side of the antenna element formation surface. As the signal between the antenna substrate and the module substrate decreases, the error rate decreases, and in particular, an error rate of 0.5 or less is achieved at 30 GHz, which is less than half of the signal frequency of 63 GHz of the carrier wave received by the antenna element. . Further, at 10 GHz, which is 1/5 or less of 63 GHz, 0.4 or less is further preferable.

本発明のアンテナモジュールの発明の一例を説明するための概略斜視図である。It is a schematic perspective view for demonstrating an example of invention of the antenna module of this invention. アンテナ素子が放射あるいは受信する信号の周波数ｆｏとアンテナ基板と前記モジュール基板の間でやり取りされる信号の最大周波数ｆ１とを異ならしめるための回路図である。Antenna element is a circuit diagram for occupying different from the maximum frequency f 1 of the signals exchanged between the module substrate and the frequency f o and the antenna substrate of the signal to be radiated or received.

符号の説明Explanation of symbols

１・・・・・・・アンテナモジュール
２・・・・・・・誘電体レンズ
３・・・・・・・アンテナ基板
４・・・・・・・モジュール基板
５・・・・・・・支持体
６・・・・・・・アンテナ素子
７・・・・・・・半導体素子
８・・・・・・・キャップ
９・・・・・・・グランド層 1 .... Antenna module 2 ... Dielectric lens 3 ... Antenna substrate 4 ... Module substrate 5 ... Support Body 6 ... Antenna element 7 ... Semiconductor element 8 ... Cap 9 ... Ground layer

Claims (3)

絶縁基板の一方の表面あるいは内部に単一または複数のアンテナ素子が設けられ、前記絶縁基板の他方の表面に前記アンテナ素子と接続された半導体素子を搭載してなるアンテナ基板と、該アンテナ基板を実装してなるモジュール基板とを具備するアンテナモジュールであって、前記アンテナ素子が放射あるいは受信する信号の周波数をｆ０、前記アンテナ基板と前記モジュール基板の間でやり取りされる信号の最大周波数をｆ１としたとき、ｆ０とｆ１が異なることを特徴とするアンテナモジュール。 A single or a plurality of antenna elements are provided on one surface or inside of the insulating substrate, and an antenna substrate on which a semiconductor element connected to the antenna element is mounted on the other surface of the insulating substrate, and the antenna substrate An antenna module having a module substrate mounted thereon, wherein the frequency of a signal radiated or received by the antenna element is f 0 , and the maximum frequency of a signal exchanged between the antenna substrate and the module substrate is f when set to 1, an antenna module, characterized in that f 0 and f 1 are different. 前記ｆ０とｆ１が、０．５×ｆ０≧ｆ１の関係にあることを特徴とする請求項１記載のアンテナモジュール。 The antenna module according to claim 1, wherein f 0 and f 1 are in a relationship of 0.5 × f 0 ≧ f 1 . 前記アンテナ素子の放射側に、誘電体レンズを設けてなることを特徴とする請求項１または請求項２記載のアンテナモジュール。 The antenna module according to claim 1, wherein a dielectric lens is provided on a radiation side of the antenna element.
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Cited By (5)

* Cited by examiner, † Cited by third party
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CN102916258A (en) * 2012-09-20 2013-02-06 日月光半导体制造股份有限公司 Antenna module and manufacturing method thereof
WO2016063759A1 (en) * 2014-10-20 2016-04-28 株式会社村田製作所 Wireless communication module
WO2016067969A1 (en) * 2014-10-31 2016-05-06 株式会社村田製作所 Antenna module and circuit module
EP2178119B1 (en) * 2008-10-20 2018-06-20 QUALCOMM Incorporated Surface mountable integrated circuit package
DE102019215718A1 (en) * 2019-10-14 2021-04-15 Airbus Defence and Space GmbH Antenna device for a vehicle and a vehicle with an antenna device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2178119B1 (en) * 2008-10-20 2018-06-20 QUALCOMM Incorporated Surface mountable integrated circuit package
CN102916258A (en) * 2012-09-20 2013-02-06 日月光半导体制造股份有限公司 Antenna module and manufacturing method thereof
WO2016063759A1 (en) * 2014-10-20 2016-04-28 株式会社村田製作所 Wireless communication module
JPWO2016063759A1 (en) * 2014-10-20 2017-06-08 株式会社村田製作所 Wireless communication module
US10193222B2 (en) 2014-10-20 2019-01-29 Murata Manufacturing Co., Ltd. Wireless communication module
US10498025B2 (en) 2014-10-20 2019-12-03 Murata Manufacturing Co., Ltd. Wireless communication module
WO2016067969A1 (en) * 2014-10-31 2016-05-06 株式会社村田製作所 Antenna module and circuit module
JPWO2016067969A1 (en) * 2014-10-31 2017-07-27 株式会社村田製作所 Antenna module and circuit module
US20170229769A1 (en) 2014-10-31 2017-08-10 Murata Manufacturing Co., Ltd. Antenna module and circuit module
US10468763B2 (en) 2014-10-31 2019-11-05 Murata Manufacturing Co., Ltd. Antenna module and circuit module
DE102019215718A1 (en) * 2019-10-14 2021-04-15 Airbus Defence and Space GmbH Antenna device for a vehicle and a vehicle with an antenna device

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