JP2006066728A - Substrate treatment apparatus and method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the uniformity of treatment and/or to reduce a sticking problem of foreign matters to a substrate, for example, by improving a system of partially treating a substrate without making a member contact with the surface to be treated of the substrate. <P>SOLUTION: A substrate treatment apparatus 100 treats the substrate 10 having a first surface 12 and a second surface 14 with liquid 145. The substrate treatment apparatus 100 is provided with a substrate holder 160 which holds the substrate 10 in contact with the second surface 14 of the substrate 10, and a partition 120 for partitioning an area 12a to be treated and an area 12b not to be treated by holding the liquid 145 and gas 130, so as to make the liquid 145 contact with the area 12a to be treated of the first surface 12 of the substrate 10, and so as to make the gas 130 contact with the area 12b not to be treated of the first surface 12 of the substrate 10. The partition 120 is arranged so as to avoid contacting with at least the first surface 12 of the substrate 10, and holds the liquid 145 around its surrounding. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus and method for processing a substrate partially with a liquid.

  There is a demand for processing a part of the substrate surface as a processing target area and the other part as a non-processing target area. For example, regarding the formation of a porous layer by anodization, there is a method in which anodization is performed after an oxide film, a nitride film, or a resist film is formed in advance on a non-processing target region of a substrate (Non-Patent Document 1).

  However, how to remove the protective film after the treatment is a problem. In the method of applying the resist film, a method of removing the residual resist in a stripping solution such as acetone or a heated sulfuric acid solution can be used. However, these stripping solutions remain in the pores of the porous layer, and later. It evaporates in the heat treatment process. At this time, problems such as the problem that the evaporated material corrodes the chamber, the problem of increasing the number of foreign matters by adhering to the surface of the substrate, and the like are caused.

  The simplest method is a method of separating the processing target region and the non-processing target region using a sealing member such as an O-ring. However, in such a method, the sealing member comes into contact with the substrate, so that foreign substances are generated on the substrate. Can adhere. In particular, a powerful cleaning method for removing foreign matters cannot be applied to the porous layer or the plating layer formed by anodization as described above. This is because the porous layer and the plating layer may be damaged by the cleaning. Therefore, the foreign matter attached by the contact of the seal member is brought into the next process without being removed. Further, the substrate may be damaged by the contact of the seal member itself.

Furthermore, in the method using the seal member, when the seal is weak, the treatment liquid may enter the non-treatment target region due to capillary action. As the size of the semiconductor substrate increases and the size of the liquid crystal panel increases, the area to be sealed also increases, and the problem of poor sealing becomes more apparent. Moreover, the function of a sealing member such as an O-ring deteriorates due to wear and chemical change by repeating the treatment.
Patent Document 1 discloses a method in which a mask is disposed opposite to a processing target area of a wafer, a processing liquid is supplied to the gap between the processing target area and the mask by capillary action force, and the processing target area is processed with this processing liquid. Has been. This method provides one solution to the problem of foreign matter adhesion to the substrate and the problem of substrate damage.
Volker Lehmann, Electrochemistry of Silicon, WILEY-VCH, Germany, 2002, p. p. 107-108. JP 2002-246364 A

  However, the method described in Patent Document 1 inevitably requires that the gap be sufficiently small in order to supply the treatment liquid to the gap between the region to be treated and the mask using the capillary action force. Causes deterioration of the processing solution during processing. Further, such a small gap makes it difficult to circulate the processing liquid, and is not suitable for uniform processing of the processing target area. Furthermore, when this method is applied to cleaning, there is a high possibility that foreign matter removed by cleaning will reattach to the substrate. Therefore, it is considered that the practical application of the method described in Patent Document 1 is limited to a simple one such as removal of a coating.

  The present invention has been made on the basis of recognition of the above problems, and has improved a method of partially processing a substrate without bringing a member into contact with a surface to be processed of the substrate, for example, improving processing uniformity. Another object of the present invention is to reduce the problem of foreign matter adhesion to the substrate.

  The substrate processing apparatus of the present invention is configured as a substrate processing apparatus that processes a substrate having a first surface and a second surface with a liquid, and a substrate holding unit that holds the substrate in contact with the second surface of the substrate. The liquid and the gas are held so that the liquid is brought into contact with the processing target area of the first surface of the substrate and gas is brought into contact with the non-processing target area of the first surface of the substrate. A partition portion that separates the region from the non-processing target region, the partition portion being arranged so as not to contact at least the first surface of the substrate, and holding the liquid surrounding the periphery.

  According to a preferred embodiment of the present invention, the substrate processing apparatus may further include first and second electrodes disposed opposite to each other, and the substrate is connected to the first electrode by the substrate holding part. It may be disposed between the second electrode.

According to a preferred embodiment of the present invention, the first electrode may be disposed at a position farther than a minimum distance between the partition portion and the substrate so as to face the first surface of the substrate.
According to a preferred embodiment of the present invention, it is preferable that a portion where the partition portion surrounds the liquid is deeper than a minimum distance between the partition portion and the substrate.

According to a preferred embodiment of the present invention, the substrate processing apparatus may further include a gas supply unit that supplies the gas to the non-processing target region.
According to a preferred embodiment of the present invention, the gas supply unit may include a pressure adjusting unit that adjusts the pressure of the gas supplied to the non-processing target region.
According to a preferred embodiment of the present invention, it is preferable that the partition portion holds the liquid and the gas so that an interface between the liquid and the gas is located at an end portion of the partition portion or in the vicinity thereof. .

  The substrate processing method of the present invention is a method of processing a substrate having a first surface and a second surface with a liquid, wherein the substrate holding portion is in contact with the second surface of the substrate by the substrate holding portion. Holding the substrate; bringing the liquid and the gas into contact with the liquid in contact with the processing target region of the first surface of the substrate; and bringing the gas into contact with the non-processing target region of the first surface of the substrate. A step of separating the processing target region and the non-processing target region by being held by a separator, and a step of processing the processing target region with the liquid, wherein the separator includes at least the first surface of the substrate The liquid is arranged so as not to come into contact with the liquid and to surround and hold the liquid.

  According to the present invention, a method of partially processing a substrate without bringing a member into contact with a processing target surface of the substrate is improved, for example, improving processing uniformity and / or adhering foreign matter to the substrate. The problem can be reduced.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

[First Embodiment]
FIG. 1 is a diagram showing a schematic configuration of a substrate processing apparatus according to a first preferred embodiment of the present invention. FIG. 2 is an enlarged view of a part of FIG. A substrate processing apparatus 100 shown in FIGS. 1 and 2 is configured as an apparatus for processing a substrate (for example, a wafer) 10 having a first surface 12 and a second surface 14 with a liquid. The substrate 10 has a processing target area 12a and a non-processing target area 12b on the first surface 12. In this embodiment, the non-processing target area 12b is defined as a peripheral area of the substrate 10, and the processing target area 12a is defined as an inner area of the non-processing target area 12b.
The substrate 10 is held by the substrate holding unit 160. More specifically, the substrate holding unit 160 holds the substrate 10 in contact with all or part of the second surface 14 (part in the illustrated example). The substrate holding part 160 has, for example, an annular suction part 166. The suction part 166 has, for example, a suction groove 166a, and sucks the substrate 10 through the suction hole 168 and the suction pipe 170, and the suction groove 166a is decompressed by a decompression mechanism (not shown).

The substrate processing apparatus 100 separates the processing target region 12a and the non-processing target region 12b without causing the solid member to contact the first surface 12 of the substrate 10 and processes only the processing target region 12a with the liquid 145. Specifically, the substrate processing apparatus 100 holds the liquid 145 and the gas 130 so that the liquid 145 contacts the processing target region 12a of the substrate 10 and the gas 130 contacts the non-processing target region 12b of the substrate 10. A separation unit 120 that separates the processing target region 12 a and the non-processing target region 12 b by a boundary between the liquid 145 and the gas 130 is provided. By bringing the liquid 145 into contact with the processing target area 12 a of the substrate 10, only the processing target area 12 a is processed with the liquid 145. The interface B between the liquid 145 and the gas 130 can be formed at the end of the gas space defining surface 120b of the partition member 120 or in the vicinity thereof.
The separator 120 is disposed so as not to contact at least the first surface 12 of the substrate 10. In the example illustrated in FIG. 1, the partition 120 is disposed so as not to contact any part of the substrate 10. The separator 120 holds the liquid 145 so as to surround the periphery of the liquid 145. The depth D of the portion where the partition 120 surrounds the liquid 145 is deeper than the minimum distance d between the partition 120 (the gas space defining unit 120b in FIG. 1) and the substrate 10. By holding the liquid 145 by such a partition 120, a larger amount of liquid can be stored in the processing target region 12a than the configuration in which the liquid is held using the capillary action force described in Patent Document 1. Can be used for processing. Therefore, it is possible to suppress the deterioration of the liquid 145 during the processing of the processing target region 12a and / or to circulate the liquid 145 easily. Therefore, such a configuration is advantageous for uniform processing of the processing target area 12a. Further, for example, when cleaning the processing target area 12a, it is possible to reduce the possibility that the foreign matter removed from the processing target area 12a by the cleaning reattaches to the processing target area 12a.
The substrate processing apparatus 100 may further include a first electrode 110 and a second electrode 162 disposed to face each other. The substrate 10 may be disposed between the first electrode 110 and the second electrode 162 by the substrate holding unit 160. The first electrode 110 and the second electrode 162 are connected to the power source 180, so that a current path through the substrate 10 can be formed. When the first surface 12 of the substrate 10 is anodized, the first electrode 110 and the second electrode 162 can be connected to the power source 180 so that the first electrode 110 is a cathode and the second electrode 162 is an anode. When the first surface 12 of the substrate 10 is plated, the first electrode 110 and the second electrode 162 can be connected to the power source 180 so that the first electrode 110 serves as an anode and the second electrode 162 serves as a cathode.
The first electrode 110 is disposed so as to face the first surface 12 of the substrate 10 at a position farther than the minimum distance d between the separator 120 and the substrate 10. Here, in the configuration example shown in FIG. 1, the first electrode 110 is arranged at a position that is separated from the substrate 10 by a distance D (D> d).
The first structure (upper structure) including the first electrode 110 and the separator 120 and the second structure (lower structure) including the second electrode 162 and the holding unit 160 include one or more sealing members ( For example, it can be connected via an O-ring 150.

The liquid 145 to be brought into contact with the processing target region 12 a of the substrate 10 is surrounded by the liquid space definition unit 120 a of the partition 120. Therefore, the separator 120 also functions as a tank that holds the liquid 145. The non-processing target area 12b of the substrate 10 is opposed to the gas space definition part 120b of the partition part 120. Here, a space in which the partition 120 holds the liquid is referred to as a liquid space, and a space in which the partition 120 holds the gas 130 is referred to as a gas space.
By circulating the liquid 145 through the circulation path including the liquid space, it is possible to always provide the fresh liquid 145 to the processing target region 12a of the substrate 10 and to remove reactive organisms (for example, gas). The processing target area 12a can be processed more uniformly. In the configuration example shown in FIG. 1, the liquid in the tank 140 is supplied into the liquid space through the liquid feeding pipe 136 and the inlet 132 by the pump 142, and the liquid 145 in the liquid space passes through the outlet 134 and the liquid feeding pipe 138. Return to tank 140. A filter may be arranged in the circulation path configured as described above.
Gas is supplied from the pressure source 128 to the gas space through the regulator 126, the supply pipe 124, and the gas flow path 122. The liquid 145 covering the processing target region 12a and the gas 130 covering the non-processing target region 12b separate the processing target region 12a and the non-processing target region 12b in an equilibrium state. The interface B between the liquid 145 and the gas 130 can be formed at the end of the gas space defining surface 120b of the partition member 120 or in the vicinity thereof. Here, by adjusting the pressure and surface tension of the liquid 145 and the pressure of the gas 130 so that the boundary B thereof is positioned approximately at the end of the gas space defining surface 120b, the pressures of the liquid 145 and the gas 130 are adjusted. Even in the case of slight fluctuation, the boundary B is maintained at the end of the gas space defining surface 120b or in the vicinity thereof. This is because such an end is a singular point where the liquid can freely change the contact angle with respect to the member, and is a stable point where the interface is not easily broken against fluctuations in water pressure and gas pressure.

The second surface 14 of the substrate 10 can be electrically connected to the second electrode 162 through a liquid 165 in a tank that can be constituted by the substrate holding unit 160. Alternatively, the second surface 14 of the substrate 10 may be electrically connected directly to the second electrode 162.
Hereinafter, a specific configuration example of the substrate processing apparatus 100 will be described. The substrate holding unit 160 can be made of resin, for example. In addition, the substrate holding unit 160 can be configured to hold, for example, a wafer (for example, a silicon wafer) having a diameter of 200 mm. Typically, the substrate 10 can be held and processed with its surface horizontal. The substrate holding unit 160 can hold the substrate 10 by vacuum suction of the second surface 14 of the substrate 10 by the suction unit 166.

The delimiter 120 can be made of resin, for example. The partition part 120 and the substrate holding part 160 can be connected via a seal member 150 such as an O-ring, for example. The partition 120 defines a circular space as the liquid space, and can hold the circular first electrode 110 above the space. Typically, the center of the first electrode 110 coincides with the center of the substrate 10, and the diameter of the first electrode 110 may be, for example, 180 mm.
For example, the processing target region 12a is a region within a circle having a radius of 90 mm aligned with the center of the substrate 10, and the non-processing target region 12b is a region outside the processing target region 12a, that is, a region having a radius of 90 to 100 mm. can do.
The distance d between the gas space defining part 120b in which the partition part 120 defines the gas space and the first surface 12 of the substrate 10 is preferably 1 mm or less, and preferably 0.2 mm or less.

  Hereinafter, an example in which the substrate processing apparatus 100 anodizes the processing target region 12a of the first surface 12 of the silicon substrate 10 to form a porous layer will be described.

The first electrode 110 used as the cathode is preferably composed of a material resistant to the chemical conversion solution, such as gold or platinum. A distance D between the substrate 10 and the cathode 110 can be set to 20 mm, for example.
The second electrode 162 used as the anode may be a conductive member, but it is preferable to select a material having a higher ionization potential than hydrogen. The anode may be disposed so as to contact the second surface 14 of the substrate 10.

  The partition part 120 and the substrate holding part 160 can be made of a material resistant to the chemical conversion liquid, for example, Teflon (registered trademark) or polypropylene.

  First, the silicon substrate 10 is held by the substrate holding unit 160, and a conductive solution (electrolytic solution) 165 is injected into the second surface side of the substrate 10.

  Next, the gas 130 is supplied to the gas space through the regulator 126. The pressure of the gas 130 can be 0.3 KPa, for example. As the gas, a gas that is inert with respect to the substrate 10, the chemical liquids 145 and 165, the partition 120, and the like, for example, nitrogen is selected.

  Next, the chemical conversion liquid 145 is injected into the liquid space on the first surface 12 side of the substrate 10. At this time, an interface B between the chemical conversion liquid 145 and the gas 130 is formed at a position where the pressure and surface tension acting on the chemical conversion liquid 145 and the pressure of the gas 122 are balanced. The interface between the chemical liquid 145 and the gas 130 is preferably formed at the end of the gas space defining surface 120b or in the vicinity thereof.

Next, the first electrode 110 and the second electrode 162 are connected to the power source 180 so that the first electrode 110 serves as a cathode and the second electrode 162 serves as an anode, and anodization of the processing target region 12a of the substrate 10 is performed. The region 12a is made porous.
The conditions can be as follows, for example.

Substrate (10); P ⁺ substrate, specific resistance: 16 mΩ · cm
Chemical conversion liquid (145); HF: IPA = 42.5: 9.2 (wt.%)
Chemical conversion depth (D); 20mm
Current conditions: 5.12 A × 210 seconds The semiconductor substrate, chemical conversion liquid, and current conditions can be freely set according to the required structure of the porous layer. Further, the chemical liquid may be circulated during the treatment to remove bubbles generated from the substrate surface.

  By the above processing, a substrate having a 10 μm conversion layer in a region within a radius of 90 mm from the center of the substrate 10 and a substrate having no conversion layer in a peripheral region having a radius of 90 to 100 mm can be obtained.

  The substrate processing apparatus 100 can be used for anodizing, plating, electric field oxidation, cleaning, and the like. In cleaning, an electrode is generally unnecessary.

As described above, the liquid 145 is brought into contact with the processing target region 12a, and the liquid 145 and the gas 130 are held so that the gas 130 is brought into contact with the non-processing target region 12b, and the processing target is defined by the boundary B between the liquid 145 and the gas 130. By separating the region 12a and the non-processing target region 12b, it is possible to solve the problem of adhesion of foreign matters to the substrate and damage to the substrate. In addition, according to the structure in which the partition 120 surrounds and holds the periphery of the liquid, it is easy to supply fresh liquid to the processing target area, and reaction products and foreign substances stay in the vicinity of the processing target area. Can be prevented, and the region to be processed can be processed with high uniformity.
[Second Embodiment]
FIG. 3 is a diagram showing a schematic configuration of the substrate processing apparatus according to the second preferred embodiment of the present invention. A substrate processing apparatus 200 shown in FIG. 3 is configured as an apparatus for processing a substrate (for example, a wafer) 10 having a first surface 12 and a second surface 14 with a liquid. The substrate 10 has a processing target region 12c and a non-processing target region 12d on the first surface 12. In this embodiment, the processing target area 12c is defined as a peripheral area of the substrate 10, and the non-processing target area 12d is defined as an inner area of the processing target area 12c.
The substrate processing apparatus 200 includes a substrate holding unit 210. The substrate holding unit 210 includes, for example, an annular adsorption unit 166, and adsorbs the second surface of the substrate 10 by the adsorption unit 166 to hold the substrate 10. The substrate holding part 210 is connected to the tank wall member 250 through the seal member 150, thereby forming a tank structure.

  The substrate processing apparatus 200 further holds the liquid 145 and the gas 130 so that the liquid 145 is brought into contact with the processing target region 12c of the substrate 10 and the gas 130 is brought into contact with the non-processing target region 12d of the substrate 10. A delimiter 220 that delimits 12c and the non-processing target area 12d is provided. By bringing the liquid 145 into contact with the processing target area 12 c of the substrate 10, only the processing target area 12 c is processed with the liquid 145.

The separator 220 is disposed so as not to contact at least the first surface 12 of the substrate 10. In the example illustrated in FIG. 3, the partition 220 is disposed so as not to contact any part of the substrate 10. The separator 220 holds the liquid 145 so as to surround the periphery of the liquid 145. The depth D of the portion where the partition 220 surrounds the liquid 145 is deeper than the minimum distance d between the partition 120 and the substrate 10. By holding the liquid 145 by such a partitioning portion 220, more liquid can be stored in the processing target region 12 c than in the configuration in which the liquid is held using the capillary action force described in Patent Document 1. Can be used for processing. Therefore, it is possible to suppress the deterioration of the liquid 145 during the processing of the processing target region 12c and / or to circulate the liquid 145 easily. Therefore, such a configuration is advantageous for uniform processing of the processing target region 12c. Further, for example, when the processing target area 12c is cleaned, it is possible to reduce the possibility that the foreign matter removed from the processing target area 12c by the cleaning reattaches to the processing target area 12a.
The substrate processing apparatus 200 may further include a first electrode 230 and a second electrode 240 disposed to face each other. The substrate 10 may be disposed between the first electrode 230 and the second electrode 240 by the substrate holding unit 210. The first electrode 230 and the second electrode 240 are connected to the power source 180, whereby a current path through the substrate 10 can be formed. When anodizing the first surface 12 of the substrate 10, a power source 180 can be connected to the first electrode 230 and the second electrode 240 such that the first electrode 230 is a cathode and the second electrode 240 is an anode. When the first surface 12 of the substrate 10 is plated, the power source 180 can be connected to the first electrode 230 and the second electrode 240 so that the first electrode 230 serves as an anode and the second electrode 240 serves as a cathode.
The first electrode 230 is disposed so as to face the first surface 12 of the substrate 10 at a position farther than the minimum distance d between the separator 220 and the substrate 10. Here, in the configuration example shown in FIG. 3, the first electrode 230 is disposed at a position separated from the substrate 10 by a distance D (D> d).
[Third Embodiment]
In this embodiment, a porous layer having a different structure is formed in a peripheral region and an inner region using the substrate processing apparatus 100 according to the first embodiment and the substrate processing apparatus 200 according to the second embodiment. Provide a method.

  First, in the first step, the substrate processing apparatus 100 shown in FIG. 1 is used to anodize the processing target region 12a using the peripheral region of the substrate 10 as the non-processing target region 12b and the inside as the processing target region 12a. The porous layer 302 is formed. Next, in the second step, the substrate processing apparatus 200 shown in FIG. 3 is used to anodize the processing target region 12c with the peripheral region of the substrate 10 as the processing target region 12c and the inside as the non-processing target region 12d. The porous layer 303 is formed. Here, in the first step and the second step, the conditions for anodization (for example, the chemical conversion solution conditions and the current conditions) are changed.

  As a result, as illustrated in FIG. 4, a substrate having the first porous layer 303 in the peripheral region and the second porous layer 302 having a structure different from that of the first porous layer 303 inside thereof is formed. can get.

  In addition, said 2nd process may be implemented first and then a 1st process may be implemented. Further, a non-porous layer may be left between the porous layer 302 and the porous layer 303.

[Fourth Embodiment]
This embodiment provides a method for manufacturing a thin film chip. FIG. 5 is a diagram showing a method for manufacturing a thin film chip as a fourth embodiment of the present invention. First, in the step shown in FIG. 5A, a porous layer 502 is formed on the surface of a substrate (for example, a silicon substrate) 501 and a semiconductor layer (for example, an epitaxial silicon layer) 503 is formed on the porous layer 502. Further, a plurality of integrated circuits 504 are formed using the semiconductor layer 503 as an active layer.

  In the step shown in FIG. 5B, the substrate processing apparatus 600 is used to locally anodize the semiconductor layer 503 and form a porous layer 505 for separating a plurality of integrated circuits 504 into individual integrated circuits. To do. First, the cathode-side structure unit 650 of the substrate processing apparatus 600 is brought close to the semiconductor layer 503 without contacting the semiconductor layer 503. Further, the anode-side structure unit 660 of the substrate processing apparatus 600 is brought into contact with the back surface of the substrate 501.

  The cathode side structure unit 650 includes a gas supply unit 610 that supplies an inert gas to a non-processing target region of the semiconductor layer 503 and a liquid supply unit 620 that supplies a chemical conversion liquid to the processing target region of the semiconductor layer 503. The gas supply unit 610 and the liquid supply unit 620 are separated by a separation unit 615. The cathode side structure unit 650 further includes a cathode 620 for anodizing the region to be processed. The anode side structure 660 has an anode 670.

After the cathode-side structure unit 650 and the anode-side structure unit 660 are disposed, an inert gas is supplied from the gas supply unit 610 to a non-processing target region (a portion including the integrated circuit 504) of the semiconductor layer 503 and from the liquid supply unit 620. By supplying the chemical liquid to the processing target region of the semiconductor layer 503 (the region for separation between the integrated circuit 504 and the integrated circuit 504), the non-processing target region and the processing target region are separated. Further, by passing an electric current through the cathode 630 and the anode 670 to the substrate including the semiconductor layer 503, the region to be processed is anodized to form the porous region 505.
In the step shown in FIG. 5C, the thin film chip 510 is obtained by separating the individual integrated circuits 504 from the substrate using the porous layer 502 and the porous region 505. This separation is performed by a method of etching the porous layer 502 and the porous region 505, a method of destroying the porous layer 502 and the porous region 505 using a fluid pressure, a method of applying a stress to the substrate, and the like. be able to.

1 is a diagram showing a schematic configuration of a substrate processing apparatus according to a first preferred embodiment of the present invention. It is the figure which expanded a part of FIG. It is a figure which shows schematic structure of the substrate processing apparatus of the 2nd preferable embodiment of this invention. It is a figure which shows typically an example of the board | substrate obtained by the 2nd suitable embodiment of this invention. It is a figure which shows the manufacturing method of the thin film chip as 4th Embodiment of this invention.

Claims (8)

A substrate processing apparatus for processing a substrate having a first surface and a second surface with a liquid,
A substrate holding part for holding the substrate in contact with the second surface of the substrate;
The liquid and the gas are held so that the liquid is brought into contact with the processing target area of the first surface of the substrate and the non-processing target area of the first surface of the substrate is brought into contact with the processing target area. And a delimiter that delimits the non-processing target area,
The substrate processing apparatus, wherein the partition portion is disposed so as not to contact at least the first surface of the substrate, and holds the liquid so as to surround the periphery thereof.   2. The apparatus according to claim 1, further comprising first and second electrodes disposed to face each other, wherein the substrate is disposed between the first electrode and the second electrode by the substrate holding unit. The substrate processing apparatus as described.   3. The substrate processing according to claim 2, wherein the first electrode is disposed at a position farther than a minimum distance between the partition portion and the substrate so as to face the first surface of the substrate. apparatus.   4. The substrate processing apparatus according to claim 1, wherein a portion where the partition portion surrounds the liquid is deeper than a minimum distance between the partition portion and the substrate. 5.   The substrate processing apparatus according to claim 1, further comprising a gas supply unit that supplies the gas to the non-processing target region.   The substrate processing apparatus according to claim 5, wherein the gas supply unit includes a pressure adjusting unit that adjusts a pressure of a gas supplied to the non-processing target region.   The said partition part hold | maintains the said liquid and said gas so that the interface of the said liquid and the said gas may be located in the edge part of the said partition part, or its vicinity. The substrate processing apparatus according to claim 1. A substrate processing method for processing a substrate having a first surface and a second surface with a liquid,
Holding the substrate by the substrate holding unit in a state where the substrate holding unit is in contact with the second surface of the substrate;
The liquid and the gas are held by a partitioning unit so that the liquid is brought into contact with the processing target region of the first surface of the substrate and the gas is brought into contact with a non-processing target region of the first surface of the substrate. Separating the processing target area and the non-processing target area;
Treating the region to be treated with the liquid;
The substrate processing method is characterized in that the partition portion is disposed so as not to contact at least the first surface of the substrate and to hold the liquid so as to surround the periphery thereof.

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