JP2006049295A - Image display apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce the potential difference generated across a minute gap, between a spacer and a face plate. <P>SOLUTION: An image forming apparatus includes a first substrate having a conductive material; a second substrate, having an electrode and an anode electrode connected to the electrode via a resistor; and a spacer which abuts against the conductive element, the electrode and the anode electrode to regulate the distance between the first and second substrates. A first resistor film, covering a side face of the spacer and electrically connected to the conductive element, the electrode and the anode electrode, and a second resistor film, covering a portion of the spacer facing the resistor and electrically connected to the electrode and the anode electrode satisfy the relational expressions: (sheet resistance value of the second resistor film)<(sheet resistance value of the first resistor film); and (resistance value between the connection part of the second resistor film to the electrode and the connection part thereof to the anode electrode)>(resistance value of the resistor). <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an image display apparatus having an atmospheric pressure resistant structure.

  2. Description of the Related Art In recent years, among image display devices using electron-emitting devices, flat display devices with a small depth are attracting attention as replacements for CRT type display devices because they are space-saving and lightweight.

  Such a flat display device has an airtight container in which a rear plate having an electron-emitting device and a face plate having a light emitting member (phosphor) that emits light when irradiated with an electron beam are joined via a frame member. The inside of the hermetic container is maintained at a vacuum of about 10 to the sixth power of Torr, and as the display area of the image display device increases, the rear plate and the face plate due to the pressure difference between the inside of the hermetic container and the outside. A means for preventing deformation or destruction is required. For this reason, a structural support (called a spacer or a rib) made of glass or the like for supporting atmospheric pressure is provided inside the hermetic container. In this way, the space between the rear plate on which the multi-beam electron source is formed and the face plate on which the fluorescent film is formed is usually maintained at a submillimeter to several millimeters, and the inside of the hermetic container is maintained at a high vacuum as described above. . The spacer should not greatly affect the trajectory of electrons flying between the rear plate and the face plate. The cause of the influence on the electron trajectory is a static electric field change due to static or electrification in the vicinity of the spacer caused by the presence of the spacer. In spacer charging, a part of the electrons emitted from the electron source or the electrons reflected by the face plate enter the spacer, and secondary electrons are emitted from the spacer, or ions ionized by the collision of the electrons adhere to the surface. This is probably due to this.

  When the spacer is positively charged, electrons flying in the vicinity of the spacer are attracted to the spacer, so that the display image is distorted in the vicinity of the spacer. The effect of charging becomes more prominent as the distance between the rear plate and the face plate increases.

  In general, as a means for suppressing charging, conductivity is imparted to the spacer surface, and the electric charge is removed by passing a slight current.

  As an example of such a display device, there are display devices disclosed in Patent Literature 1 and Patent Literature 2. In Patent Document 1, as a countermeasure against an unintended discharge phenomenon between a rear plate and a face plate, the anode electrode on the face plate is divided into strips and connected to a common electrode connected to a high voltage power source via a resistor. A configuration and a method of electrically connecting the face plate and the spacer are described.

Patent Document 2 discloses that an anode electrode and a guard electrode defined at a lower potential than the anode electrode are provided on a face plate for the purpose of weakening an electric field in a region where the anode electrode is not formed (non-display region). And a resistive film electrically connected to the anode electrode and the guard electrode. With this configuration, the electric field in the region between the guard electrode and the frame portion is weakened, and discharge due to the shape or the like of the member disposed in the non-display region is prevented. This display device also has a spacer, and the spacer is a material in which a base material is coated with a resistance film, and is electrically connected to the anode electrode and the guard electrode.
Japanese Patent Laid-Open No. 10-326583 (European Patent Publication: EP866491A) JP 2002-237268 (European Patent Publication: EP1220273A)

  As described in Patent Document 1 and Patent Document 2, various electrodes other than the anode electrode may be disposed on the face plate provided with the anode electrode. Such electrodes are the common electrode 105 in Patent Document 1 and the potential regulating electrode 1015 in Patent Document 2. On the other hand, since the spacer having an atmospheric pressure resistant structure disclosed in both documents exhibits an atmospheric pressure resistant function at a place like a vacuum panel of a display device, the above-mentioned anode electrode and other kinds of electrodes are used. It is being considered to arrange it across. Further, as described in both documents, the spacer is required to take charge-up measures as well as function as an atmospheric pressure resistant structure. As a countermeasure against charge-up, it is disclosed that an antistatic film is provided on the surface. However, as described above, when the electrode is arranged across the electrodes such as the anode electrode, the spacer is an electrode similar to the anode electrode. In addition to simply forming an antistatic film on the surface, an optimal design that takes into account the electrical behavior between the anode electrode and various electrodes is used. desired. An object of the present invention is to provide a novel spacer in a display device having such a structure.

The present invention for solving the above problems includes a first substrate having a potential-defined conductor, an electrode defined at a higher potential than the conductor, and an anode electrode connected to the electrode via a resistor. A second substrate disposed opposite the first substrate, the conductor, the electrode, and the anode electrode to contact the first substrate and the second substrate. An image forming apparatus having a spacer for defining, wherein the spacer covers a base material, at least a side surface of the base material, and is electrically connected to the conductor, the electrode, and the anode electrode. A second resistance film that covers at least a portion corresponding to the resistor and is a surface facing the second substrate of the base material and is electrically connected to the electrode and the anode electrode; And the second resistive film satisfies the following relational expression: The image forming apparatus according to symptoms.
The sheet resistance value of the second resistance film <the sheet resistance value of the first resistance film. The resistance value between the connection portion of the second resistance film with the electrode and the connection portion of the anode electrode> the resistance of the resistor. In addition, the present invention provides a first substrate having a potential-defined conductor, an anode electrode defined at a higher potential than the conductor, and a guard electrode defined at a lower potential than the anode electrode. A second substrate having a resistance film electrically connected to the anode electrode and the guard electrode and disposed opposite to the first substrate; the conductor; the anode electrode; and the guard. An image forming apparatus having a spacer that contacts an electrode and defines a distance between the first substrate and the second substrate, wherein the spacer covers a base material and at least a side surface of the base material. Electrically with the conductor and the anode and guard electrodes A first resistance film to be connected and a surface of the base material facing the second substrate and covering at least a portion corresponding to the resistance film, and electrically connected to the anode electrode and the guard electrode The sheet resistance value of the second resistance film is smaller than the sheet resistance value of the first resistance film.

  According to the present invention, even when a spacer having a resistance film is arranged on a face plate having a plurality of electrodes to which various potentials are applied, the electrical operation required for the face plate (suppression of discharge generation) is achieved. In addition, a good image display can be realized without hindering the suppression of the discharge current when the discharge occurs.

  The image forming apparatus of the present invention relates to a flat-type electron beam display device, and in particular, the present invention is applied to an electron beam display device using a field emission type element or a surface conduction type electron emission element because a high voltage is required. Preferred form.

  The basic configuration of the flat-type electron beam display device to which the present invention is applied will be described with reference to specific examples.

  FIG. 1 is a perspective view of the planar electron beam apparatus used in the embodiment, and a part of the panel is cut away to show the internal structure.

In the figure, 115 is a rear plate which is a first substrate, 116 is a side wall, 117 is a face plate which is a second substrate, and 115 to 117 is used to maintain the inside of the display panel in a vacuum. An airtight container is formed. Since the inside of the above airtight container is maintained at a vacuum of about 10 ⁻⁴ (Pa), a spacer 120 is provided as an atmospheric pressure resistant structure for the purpose of preventing destruction of the airtight container due to atmospheric pressure or unexpected impact. The spacer 120 is fixed by a fixing jig (not shown) outside the image display area.

  N × M cold cathode electron-emitting devices 112 are formed on the rear plate 115 (N and M are positive integers of 2 or more, and are appropriately set according to the target number of display pixels. .) The N × M cold cathode electron-emitting devices are arranged in a simple matrix by M row-directional wirings 113 and N column-directional wirings 114. Note that the intersection of the row direction wiring 113 and the column direction wiring 114 is insulated by an insulating layer (not shown).

  In the present embodiment, the surface conduction electron-emitting devices are arranged in a simple matrix. However, the present invention is not limited to this, but can be applied to FE-type and MIM-type electron-emitting devices, and is not limited to the simple matrix arrangement.

  FIG. 3 is a schematic sectional view of the surface conduction electron-emitting device used in this embodiment (corresponding to the B-B ′ section in FIG. 1). Here, 115 is a rear plate, 113 is a row-direction wiring, 114 is a column-direction wiring, 105 is an element electrode, 106 is a conductive thin film, 107 is an electron formed by performing energization forming processing and energization activation processing. An emission part 104 is a carbon film deposited on the conductive thin film 106 near the electron emission part.

  A fluorescent film 118 is formed on the face plate 117. Since this embodiment is a color display device, the phosphor film 118 is coated with phosphors of three primary colors red, green, and blue used in the field of CRT. For example, as shown in FIG. 4, the phosphors of the respective colors are applied in stripes, and a black conductor 110 is provided between the phosphor stripes.

  In addition, the method of separately applying the phosphors of the three primary colors is not limited to the stripe arrangement shown in FIG. 3, and other arrangements such as a delta arrangement may be used depending on the arrangement of the electron sources. Also good.

  When a monochrome display panel is manufactured, a monochromatic phosphor material may be used for the phosphor film 118, and a black conductive material is not necessarily used.

  Further, a metal back 119 known in the field of CRT is provided as an anode electrode on the surface of the fluorescent film 118 on the rear plate side.

  Further, the face plate is provided with an electrode 121 for supplying a potential to the anode electrode via a resistor 123 (not shown). For the resistor 123, refer to FIG. The resistor 123 is effective for suppressing current and reducing discharge damage when a discharge occurs between the metal back and the rear plate. When a metal back treatment having a thickness of about 100 nm to 200 nm is performed on the phosphor, the acceleration voltage (Va) applied to the metal back is preferably about 10 kV. This is because, under this condition, the transmittance of the electrons emitted from the electron-emitting device and accelerated to the metal back is close to 1, and the utilization efficiency is high. For this reason, when the applied voltage of the metal back is designed to be 10 kV, the upper limit of the resistance value of the resistor 123 is preferably about 1 GΩ. This is because, under this condition, even in line sequential driving in which the emission current of one element is 1 to 10 μA and 1000 elements are driven simultaneously, the voltage drop at the resistor 123 is about 1 kV, and a good image display can be performed. Further, considering the case where Va exceeds 10 kV, the upper limit of the resistance value of the resistor 123 is preferably about 10 GΩ. Further, the lower limit of the resistance value is selected so that the current flowing at the time of discharge does not hinder device destruction. When an electric current of several hundreds of mA flows between the electron source and the metal back due to discharge during the operation of Va = 10 kV, the breakdown becomes remarkable. Therefore, the resistance value of the resistor 123 is specifically selected from 10 kΩ to 10 GΩ.

  Furthermore, the face plate is provided with a guard electrode 122 that is electrically connected to the electrode 121 through a resistance film 124 (not shown). For the resistance film 124, refer to FIG. The guard electrode 122 is effective to prevent the peripheral potential from rising when the anode potential is increased or when the peripheral portion of the electron beam display device is narrowed. At this time, the resistance film 124 is effective for preventing creeping discharge. Note that the effect of the guard electrode 122 is effective even in a configuration without the electrode 121, and in this case, the guard electrode and the anode electrode are connected via the resistance film 124.

  FIG. 2 is a schematic diagram of the A-A ′ cross section of FIG. 1, and the numbers of the respective parts correspond to FIG. 1. The spacer 120 is made of a member in which a high resistance film (first resistance film) 101 for the purpose of preventing electrification is formed on the surface of the insulating substrate 100. And it arrange | positions at the required space | interval. Examples of the insulating member 100 of the spacer 120 include quartz glass, glass with reduced impurity content such as Na, ceramic member such as soda lime glass, alumina, and the like, and has a thermal expansion coefficient close to that of an airtight container. Those are preferred.

  In the embodiment described here, the spacer 120 has a thin plate shape, is arranged in parallel to the row direction wiring 113, and is electrically connected to the row direction wiring 113.

  Here, the configuration around the electrode 121 and the guard electrode 122, which is a characteristic requirement of the present invention, will be described in detail with reference to FIGS.

  FIG. 5 is a diagram for explaining the second resistive film 102 of the present invention. The CC ′ cross section of FIG. 1 is drawn by extracting only what is necessary for explaining the function of the second resistive film 102. It is a schematic diagram.

  A face plate 117 includes a black conductor 110, a metal back 119, an electrode 121, and a resistor 123 on the inner surface. The electrode 121 is connected to a high-voltage power supply outside the vacuum vessel, and is connected to the metal back 119 via the resistor 123. Supply. Reference numeral 120 denotes a spacer, on which the high resistance film 101 is formed on the surface of the substrate 100, and at least a portion of the surface facing the face plate (hereinafter referred to as an end surface) of the spacer 120 that contacts the electrode 121 and the metal back 119. A resistance film 102 is formed in a portion between the contact portions (hereinafter referred to as a non-contact portion). Reference numeral 115 denotes a rear plate, and the spacer 120 is disposed on the row direction wiring 113. Further, the spacer 120 is fixed outside the image display area by a fixing member 125. The portion of the end face of the spacer 120 between the connection portion with the electrode 121 and the connection portion with the metal back 119 (the portion d1 in FIG. 5 and the non-contact portion described above) is the potential of the row wiring 113. Affects the potential drop, and the electric field strength with the facing resistor 123 increases. For this reason, discharge may occur depending on the length of the non-contact portion (d1 in the figure) and the height of the spacer (h in the figure). In the present invention, the sheet resistance of the resistance film 102 is made lower than that of the high resistance film 101, whereby the potential drop can be suppressed, leading to suppression of discharge.

  It is necessary to select the sheet resistance value of the resistance film 102 so as not to exceed the ninth power of 10 / V which is generally said to emit electrons. As an example, the sheet resistance value required when the interval between the non-contact portions (the interval between the resistance film 102 and the resistor 123) is 1 μm is the spacer 120 having the length d1 of the non-contact portion between the resistor 123 and the resistance film 102. Table 1 summarizes the ratio of h to h and Va. The values in Table 1 are ratios between the sheet resistance value of the resistance film 102 and the sheet resistance value of the high resistance film 101. The distance between the resistor 123 and the spacer 120 is preferably 1 μm or more so that they do not come into contact with each other. Preferably, when d1 is set to 2 mm or more, the height h of the spacer is set to 4 mm or less for thinning the image forming layer, and Va is set to 10 kV or more for high brightness, the table of the resistance film 102 is obtained from Table 1. The resistance is preferably 1/10 or less of the sheet resistance of the high resistance film 101.

  More preferably, the electric field strength of the non-contact portion does not exceed 10 7 V / m because the degree of freedom in shape design is obtained. The sheet resistance value of the resistance film 102 required at this time is approximately 1/100 when the electric field strength is obtained as 10 9. Therefore, the sheet resistance of the resistance film 102 is more preferably 1/1000 or less that of the high resistance film 101.

  On the other hand, the resistance film 102 is also required to have a function of suppressing a discharge current when a discharge occurs in the image display region (a discharge between the anode of the face plate and the wiring (or the electron-emitting device) of the rear plate). Therefore, the resistance value of the portion (non-contact portion) between the contact portion with the electrode 121 and the contact portion with the metal back 119 on the end surface of the spacer needs to be higher than at least the resistance value of the resistor 123.

  Furthermore, if the resistance value of the portion (non-contact portion) between the connection portion with the electrode 121 and the connection portion with the metal back 119 on the spacer end surface is 100 times or more the resistance value of the resistor 123, the resistance Since the original discharge current suppression effect which the body 123 has is obtained, it is more preferable.

  The high resistance film 102 only needs to be in a portion (non-contact portion) between at least the connection portion with the electrode 121 and the connection portion with the metal back 119 on the end surface of the spacer, and is formed over the entire end surface of the spacer 120. May be.

  In addition, an electrode for improving the electrical connection between the electrode 121 and the metal back 119 may be provided on the end surface of the spacer 120. In this case, the connection portion of the spacer end surface with the electrode 121 and the metal It is necessary not to form an electrode in a portion (non-contact portion) between the connection portion with the back 119.

  FIG. 6 is a diagram for explaining the second resistance film 103 of the present invention. The CC ′ cross section of FIG. 1 is extracted by extracting only what is necessary for explaining the function of the second low resistance film 103. It is the drawn schematic diagram.

  A face plate 117 includes a black conductor 110, a metal back 119, a guard electrode 122, and a resistance film 124 on the inner surface, and the guard electrode 122 is electrically connected to the metal back 119 through the resistance film 124. A potential sufficiently lower than the GND potential or the anode potential is applied to the guard electrode 122, and an anode potential is applied to the metal back 119. Reference numeral 120 denotes a spacer, on which the high resistance film 101 is formed on the surface of the base material 100. Further, a surface of the spacer 120 facing the face plate (hereinafter referred to as an end surface) is connected to at least the guard electrode 122 and a metal. A resistance film 103 is formed in a portion between the connecting portion with the back 119 (hereinafter referred to as a second non-contact portion).

  Note that, as described above, in FIG. 6, the main configuration necessary to explain the requirements and functions of the resistance film 103 is extracted, and thus the CC ′ cross section of FIG. 1 is not faithfully described. For example, the electrode 121 is omitted. Reference numeral 115 denotes a rear plate, and the spacer 120 is disposed on the row direction wiring 113. Further, the spacer 120 is fixed outside the image display area by a fixing member 125. The potential distribution of the portion (second non-contact portion) between the connection portion with the guard electrode 122 and the connection portion with the metal back 119 on the end face of the spacer 120 is influenced by the potential of the row wiring 113. This is different from the potential distribution of the resistive film 124. As a result, the electric field strength of this portion (second non-contact portion) increases, and depending on the length of the non-contact portion of the resistance film 124 and the resistance film 103 (d2 in the figure) and the height of the spacer (h in the figure). May lead to discharge. By making the sheet resistance of the resistance film 103 lower than that of the high resistance film 101, the difference in potential distribution can be suppressed, and the resulting discharge can be suppressed.

  It is necessary to select the sheet resistance value of the resistive film 103 so as not to exceed the ninth power of 10 / V which is generally said to emit electrons. As an example, when the interval between the non-contact portions is 1 μm, the sheet resistance value required for the resistance film 103 is expressed as a ratio of the distance (d2) between the guard electrode 122 and the metal back 119 to the spacer height, Table 2 summarizes Va. The values in Table 2 are ratios between the sheet resistance value of the resistance film 103 and the sheet resistance value of the high resistance film 101. The distance between the resistance film 124 and the spacer 120 is preferably 1 μm or more so that the two do not come into contact with each other. Further, in order to alleviate the electric field concentration in the portion (second non-contact portion) between the connection portion of the spacer 120 and the guard electrode 122 and the connection portion of the anode 119, the spacer height h and the guard electrode 122 are reduced. The ratio d2 / h of the distance d2 between the metal back 119 and the metal back 119 is preferably 1 or more. Further, assuming that Va is 10 kV or more for high luminance, it is preferable from Table 2 that the sheet resistance of the resistance film 103 is 1/10 or less of the sheet resistance of the high resistance film 101.

  More preferably, the electric field strength of the second non-contact portion does not exceed 10 7 V / m because design flexibility is obtained. The sheet resistance value of the resistance film 103 required at this time is about 1/100 when the electric field strength is obtained as 10 9. Therefore, the sheet resistance of the resistance film 103 is more preferably 1/1000 or less that of the high resistance film 101.

  The high resistance film 103 may be at least in a portion (second non-contact portion) between the connection portion with the guard electrode 122 and the connection portion with the metal back 119, and is formed over the entire end face of the spacer 120. Also good.

  Further, an electrode for improving the electrical connection between the guard electrode 122 and the metal back 119 may be provided on the end face of the spacer 120. However, in that case, it is necessary not to form an electrode in a portion (second non-contact portion) between the connection portion of the spacer end face with the guard electrode 122 and the connection portion with the metal back 119.

  The present invention can also be applied to a face plate having both the electrode 121 and the guard electrode 122. This configuration is shown in FIG. The part numbers and the like are the same as those in FIGS. In the case of such a configuration, the electrode 121 is disposed between the guard electrode 122 and the anode electrode (metal back 119), and the electrode 121 and the guard electrode 122 are connected via the resistance film 124. It is preferable because both suppression and damage suppression due to discharge can be achieved.

  Finally, in FIG. 1, Dx1 to Dxm and Dy1 to Dyn and Hv are electrical connection terminals having an airtight structure provided for electrically connecting the display panel and an electric circuit (not shown). Dx1 to Dxm are electrically connected to the row direction wiring 113 of the electron source, Dy1 to Dyn are electrically connected to the column direction wiring 114 of the electron source, and Hv is electrically connected to the electrode 121 of the faceplate.

  In the display panel described above, when a voltage is applied to each cold cathode type electron emitting device 112 through the external terminals Dx1 to Dxm and Dy1 to Dyn, electrons are emitted from each cold cathode type electron emitting device 112. At the same time, a high voltage of several kilovolts is applied to the metal back 119 through the container outer terminal Hv and the electrode 121 to accelerate the emitted electrons and collide with the inner surface of the face plate 117. As a result, the phosphors of the respective colors constituting the fluorescent film 118 are excited to emit light, and an image is displayed.

  Usually, the applied voltage Vf to the surface conduction electron-emitting device is about 12 to 16 V, the distance d between the metal back 119 and the cold cathode type electron emitting device 112 is about 0.1 mm to 8 mm, and the metal back 119 and the cold cathode type electron emitter. The voltage Va between the emitting elements 112 is about 1 kV to 15 kV.

  Hereinafter, the present invention will be described in detail with specific examples.

Example 1
The present embodiment is an image forming apparatus that realizes discharge suppression and discharge current suppression, and will be described with reference to FIG.

  A face plate 117 includes a black conductor 110, a metal back 119, an electrode 121, and a resistor 123 on the inner surface. The electrode 121 is connected to a high-voltage power supply outside the vacuum vessel, and is connected to the metal back 119 via the resistor 123. Supply. Reference numeral 120 denotes a spacer, on which the high resistance film 101 is formed on the surface of the base material 100. Further, an end surface of the spacer 120 facing the face plate is connected to the electrode 121 and a connection portion to the metal back 119. A resistance film 102 is formed in a portion (non-contact portion) between them. Reference numeral 115 denotes a rear plate, and the spacer 120 is disposed on the row direction wiring 113. Further, the spacer 120 is fixed outside the image display area by a fixing member 125.

  The spacer 120 has a height h of 2 mm, an end face width of 200 μm, and a distance d1 (a non-contact portion length d1) between the connection portion between the electrode 121 and the metal back 119 of 4 mm.

  The metal back 119 is cut by a laser every two rows in the row direction wiring in a direction parallel to the row direction wiring, and the spacer 120 is arranged at the center of the cut metal back strip.

  The resistor 123 was formed so as to have a resistance of 100 kΩ for each metal back strip by printing and baking general ruthenium oxide as a thick film resistor.

  The high resistance film 101 was formed by depositing WGeN (W: 10%, Ge: 90%, Ar—N 2 atmosphere) by a sputtering film forming method to a thickness of about 100 nm, and the sheet resistance was 10 12. The resistive film 102 is formed by bundling the spacers 120 so as to form a single plane at the end faces of a plurality of spacers, masking the portions other than where the resistive film 102 is to be formed, and performing WGeN (W: 40%, Ge: 60%, Ar—N 2 atmosphere) was formed to a thickness of about 100 nm, and the sheet resistance was 10 8.

  At this time, the resistance between the electrode 121 of the resistance film 102 and the metal back 119 was 2 GΩ, which was higher than the resistance value of the resistor 123.

  Although Va = 10 kV was continuously applied to such an image forming apparatus for 1000 hours, there was no discharge around the resistor 123.

  Further, in order to confirm the damage at the time of discharge, a discharge resistance test was conducted by deteriorating the degree of vacuum inside the image forming apparatus. As a result, there was no defect in the metal back or the phosphor. This is considered to be because the resistive film 102 functions as a discharge current limiting resistor together with the resistor 123.

(Example 2)
The present embodiment is an image forming apparatus that realizes discharge suppression, and will be described with reference to FIG.

  A face plate 117 includes a black conductor 110, a metal back 119, a guard electrode 122, and a resistance film 124 on the inner surface, and the guard electrode 122 is electrically connected to the metal back 119 through the resistor 124. A potential sufficiently lower than the GND potential or the anode potential is applied to the guard electrode 122, and an anode potential is applied to the metal back 119. Reference numeral 120 denotes a spacer, on which the high resistance film 101 is formed on the surface of the base material 100. Further, a connection portion with the guard electrode 122 and a connection portion with the metal back 119 on the end surface of the spacer 120 facing the face plate. A resistance film 103 is formed in a portion between the two (second non-contact portion). Reference numeral 115 denotes a rear plate, and the spacer 120 is disposed on the row direction wiring 113. Further, the spacer 120 is fixed outside the image display area by a fixing member 125.

  The height 120 of the spacer 120 is 2 mm, the width of the end face is 200 μm, and the distance d2 (the length d2 of the second non-contact portion) between the connection portion between the guard electrode 121 and the metal back 119 is 4 mm.

  The resistance film 124 was formed of WGeN, and the sheet resistance was 10 12 Ω / □.

  The high resistance film 101 was formed of WGeN, and the sheet resistance was 10 12. The resistance film 102 is formed by bundling the spacers 120 so as to form one plane at the end faces of a plurality of spacers, masking the portions other than where the resistance film 102 is formed, and changing the mixing ratio of W and Ge to change WGeN. A film was formed, and the sheet resistance was 10 to the 10th power.

  Although Va = 10 kV was continuously applied to such an image forming apparatus for 1000 hours, there was no discharge around the resistance film 124. This is because by adjusting the sheet surface resistance of the resistance film 103 to be smaller than the sheet resistance of the high resistance film 101, the potential distribution on the spacer surface caused by the row wiring 113 is adjusted. It is considered that this is because the potential distribution on the film 124 can be handled.

(Example 3)
The present embodiment is a combination of the first embodiment and the second embodiment, and is an image forming apparatus that realizes suppression of discharge generation and suppression of damage due to discharge, and will be described with reference to FIG.

  The feature of this embodiment is that a face electrode 117, a guard electrode 122, a resistance film 124, an electrode 121, a resistor 123, and a metal back 119 are connected in the same order, the guard electrode 122 is defined as GND, and the electrode 121 is defined as Va. Has been. In addition, a resistance film 102 is formed on a portion (first non-contact portion) between the connection portion with the electrode 121 and the connection portion with the metal back 119 on the end face of the spacer 120. In addition, a resistance film 103 is formed on a portion (second non-contact portion) between the connection portion with the guard electrode 122 and the connection portion with the electrode 121 on the end face of the spacer 120.

  The height h of the spacer 120 is 2 mm, and the width of the end face is 200 μm. Further, the distance d1 (the length d1 of the first non-contact portion) between the connection portion of the spacer 120 to the electrode 121 and the connection portion to the metal back 119 is 4 mm. Further, the distance d2 (the length d2 of the second non-contact portion) between the connection portion of the spacer 120 to the guard electrode 122 and the connection portion to the electrode 121 is 4 mm.

  The resistor 123 was formed so as to have a resistance of 100 kΩ for each metal back strip by printing and baking general ruthenium oxide as a thick film resistor.

  The resistance film 124 was formed of WGeN, and the sheet resistance was 10 12 Ω / □.

  The high resistance film 101 was formed by depositing WGeN (W: 10%, Ge: 90%, Ar—N 2 atmosphere) by a sputtering film forming method to a thickness of about 100 nm, and the sheet resistance was 10 12. The resistance films 102 and 103 are made of WGeN (WGeN (WGeN)) by sputtering and bundling the spacers 120 so as to form one plane at the end faces of a plurality of spacers, and masking the portions other than where the resistance films 102 and 103 are formed. : 20%, Ge: 80%, Ar-N2 atmosphere) was formed to a thickness of about 100 nm, and the sheet resistance was 10 to the 10th power.

  At this time, the resistance of the portion of the resistance film 102 between the electrode 121 and the metal back 119 was 200 GΩ, which was higher than the resistance value of the resistor 123.

  Although Va = 10 kV was continuously applied to such an image forming apparatus for 1000 hours, there was no discharge around the resistor 123 and the resistor film 124.

  Further, in order to confirm the damage at the time of discharge, a discharge resistance test was conducted by deteriorating the degree of vacuum inside the image forming apparatus. As a result, there was no defect in the metal back or the phosphor.

Example 4
This embodiment differs from the third embodiment in that a resistance film is formed over the entire end face of the spacer, as shown in FIG.

  When the resistance film was formed on the end face of the spacer 120, the film was formed on the entire end face without using a mask. The conditions are the same as in Example 3.

  According to this embodiment, it is not necessary to use a mask or the like when forming the spacer end face, and the film formation becomes simple. In addition, there is a merit that alignment is easy in assembling the image forming apparatus.

  Although Va = 10 kV was continuously applied to such an image forming apparatus for 1000 hours, there was no discharge around the resistor 123 and the resistor film 124.

  Further, in order to confirm the damage at the time of discharge, a discharge resistance test was conducted by deteriorating the degree of vacuum inside the image forming apparatus. As a result, there was no defect in the metal back or the phosphor.

(Example 5)
As shown in FIG. 9, the present embodiment is different from the third embodiment in that metal electrodes 126 are provided on the end surface of the spacer 120 on the portion contacting the guard electrode 122, the portion contacting the electrode 121, and the portion contacting the metal back 119. It is provided. A metal electrode 126 is also provided on the surface of the spacer 120 in contact with the row direction wiring 113.

  According to the present embodiment, the metal electrode 126 has an effect of improving the electrical connection between the spacer 120 and each member (the guard electrode 122, the electrode 121, the metal back 119, and the row direction wiring 113) in contact therewith.

  Although Va = 10 kV was continuously applied to such an image forming apparatus for 1000 hours, there was no discharge around the resistor 123 and the resistor film 124.

  Further, in order to confirm the damage at the time of discharge, a discharge resistance test was conducted by deteriorating the degree of vacuum inside the image forming apparatus. As a result, there was no defect in the metal back or the phosphor.

The perspective view which notched and showed a part of image forming apparatus of this invention Sectional drawing which showed the spacer structure used for the image forming apparatus of this invention Sectional drawing which showed the electron-emitting element used for the image forming apparatus of this invention The top view which showed the fluorescent substance arrangement | sequence of the faceplate used for the image forming apparatus of this invention Sectional drawing which showed the characteristic part of the image forming apparatus of this invention Sectional drawing which showed the characteristic part of the image forming apparatus of this invention Sectional drawing which showed the characteristic part of the image forming apparatus of this invention Sectional drawing which showed the Example of the image forming apparatus of this invention Sectional drawing which showed the Example of the image forming apparatus of this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Spacer base material 101 Resistance film of spacer side surface 102 Resistance film of spacer end surface 103 Resistance film of spacer end surface 104 Carbon film 105 Element electrode 106 Conductive thin film 107 Electron emission part 110 Black conductive material 112 Cold cathode element 113 Row direction wiring 114 Column Direction wiring 115 Rear plate 116 Side wall 117 Face plate 118 Phosphor 119 Metal back 120 Spacer 121 Electrode 122 Guard electrode 123 Resistor 124 Resistive film 125 Spacer fixing member 126 Electrode

Claims (12)

A first substrate having a potential-defined conductor; an electrode defined at a higher potential than the conductor; and an anode electrode connected to the electrode via a resistor; An image forming apparatus comprising: a second substrate disposed opposite to the substrate; and a spacer that abuts against the conductor, the electrode, and the anode electrode to define a distance between the first substrate and the second substrate. The spacer includes a base material, a first resistance film that covers at least a side surface of the base material and is electrically connected to the conductor, the electrode, and the anode electrode, and the first resistance film of the base material. A second resistance film covering at least a portion corresponding to the resistor and facing the second substrate, and electrically connected to the electrode and the anode electrode, and the second resistor An image forming apparatus characterized in that the film satisfies the following relational expression.
The sheet resistance value of the second resistance film <the sheet resistance value of the first resistance film. The resistance value between the connection portion of the second resistance film with the electrode and the connection portion of the anode electrode> the resistance of the resistor. Resistance value.   The image forming apparatus according to claim 1, wherein a sheet resistance value of the second resistance film is 1/10 or less of a sheet resistance value of the first resistance film.   The image forming apparatus according to claim 1, wherein a sheet resistance value of the second resistance film is 1/1000 or less of a sheet resistance value of the first resistance film.   4. The image forming apparatus according to claim 1, wherein a resistance value of a portion of the second resistance film opposed to the resistor is 100 times or more a resistance value of the resistor.   5. The image forming apparatus according to claim 1, wherein a sheet resistance value of the first resistance film is between 10 7 Ω / □ and 10 14 Ω / □.   The image forming apparatus according to claim 1, wherein the sheet resistance value of the second resistance film is 10 7 Ω / □ or more.   The image forming apparatus according to claim 1, wherein a resistance value of the resistor is between 10 kΩ and 10 GΩ.   A first substrate having a potential-defined conductor; an anode electrode defined at a higher potential than the conductor; a guard electrode defined at a lower potential than the anode electrode; the anode electrode and the guard A resistance film electrically connected to the electrode, and abutting against the second substrate disposed to face the first substrate, the conductor, the anode electrode, and the guard electrode, and An image forming apparatus comprising a first substrate and a spacer for defining a distance between the second substrate, the spacer covering a base material and at least a side surface of the base material, the conductor and the anode A first resistance film electrically connected to the electrode and the guard electrode; and covering at least a portion corresponding to the resistance film on the opposing surface of the base material to the second substrate, the anode electrode and the Electrically connected to the guard electrode And a second resistive film, the sheet resistance value of said second resistance film image forming apparatus characterized by less than the sheet resistance value of the first resistance film.   9. The image forming apparatus according to claim 8, wherein the sheet resistance value of the second resistance film is 1/10 or less of the sheet resistance value of the first resistance film.   The image forming apparatus according to claim 8 or 9, wherein a sheet resistance value of the second resistance film is 1/1000 or less of a sheet resistance value of the first resistance film.   11. The image forming apparatus according to claim 8, wherein a sheet resistance value of the first resistance film is between 10 7 Ω / □ and 10 14 Ω / □.   12. The image forming apparatus according to claim 8, wherein the sheet resistance value of the second resistance film is 10 7 Ω / □ or more.

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