JP2005354104A5 - - Google Patents
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- JP2005354104A5 JP2005354104A5 JP2005226563A JP2005226563A JP2005354104A5 JP 2005354104 A5 JP2005354104 A5 JP 2005354104A5 JP 2005226563 A JP2005226563 A JP 2005226563A JP 2005226563 A JP2005226563 A JP 2005226563A JP 2005354104 A5 JP2005354104 A5 JP 2005354104A5
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- JP
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- semiconductor device
- manufacturing
- flexible substrate
- gap holding
- semiconductor chip
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Claims (26)
前記半導体チップにおける電極を有する面及び前記フレキシブル基板における前記半導体チップの電極を有する前記面に相対向して配置される面の少なくともいずれか一方にギャップ保持部を設ける工程と、
それぞれの前記面を対向させて、前記ギャップ保持部を介在させた状態で前記半導体チップと前記フレキシブル基板とを配置して、前記フレキシブル基板に設けられた接合部と、前記半導体チップの前記電極とを接合する工程と、
を含み、
前記ギャップ保持部を設ける工程にて形成される前記ギャップ保持部は、前記外部電極形成部に対応する領域に設けられる半導体装置の製造方法。 A step of preparing a flexible substrate having an area overlapping the semiconductor chip and having an external electrode forming portion in which the external electrode is formed formed in the overlapping area;
Providing a gap holding portion on at least one of the surface of the semiconductor chip having an electrode and the surface of the flexible substrate disposed opposite to the surface of the semiconductor chip having the electrode;
The semiconductor chip and the flexible substrate are arranged in a state where the surfaces are opposed to each other and the gap holding portion is interposed therebetween, a joint provided on the flexible substrate, and the electrode of the semiconductor chip, Joining the steps,
Including
The method for manufacturing a semiconductor device, wherein the gap holding portion formed in the step of providing the gap holding portion is provided in a region corresponding to the external electrode forming portion.
更に前記半導体チップと前記フレキシブル基板との間に応力吸収層を形成する工程を含む半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 1,
Furthermore, the manufacturing method of the semiconductor device including the process of forming a stress absorption layer between the said semiconductor chip and the said flexible substrate.
前記ギャップ保持部は、樹脂を印刷することによって設けられる半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 1,
The said gap holding part is a manufacturing method of the semiconductor device provided by printing resin.
前記ギャップ保持部は、インクジェット方式により樹脂を吐出させることにより設けられる半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 1,
The gap holding unit is a method of manufacturing a semiconductor device provided by discharging resin by an ink jet method.
前記ギャップ保持部は、前記半導体チップにおける前記電極を有する面にのみ設けられる半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 4,
The said gap holding part is a manufacturing method of the semiconductor device provided only in the surface which has the said electrode in the said semiconductor chip.
前記応力吸収層は、モールド材の注入によって形成される半導体装置の製造方法。 The method of manufacturing a semiconductor device according to claim 2.
The stress absorbing layer is a method for manufacturing a semiconductor device formed by injection of a molding material.
前記樹脂には、熱硬化性又は紫外線硬化性を有する樹脂を用いる半導体装置の製造方法。 In the manufacturing method of the semiconductor device in any one of Claims 3-5,
A method for manufacturing a semiconductor device, wherein the resin is a thermosetting or ultraviolet curable resin.
前記ギャップ保持部には、前記半導体チップと前記フレキシブル基板との間の応力を吸収する性質を有する部材が用いられて、且つ前記部材を前記半導体チップ及び前記フレキシブル基板の対向面に密着させることで応力吸収層が形成される半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 1,
A member having a property of absorbing stress between the semiconductor chip and the flexible substrate is used for the gap holding portion, and the member is brought into close contact with the opposing surfaces of the semiconductor chip and the flexible substrate. A method of manufacturing a semiconductor device in which a stress absorbing layer is formed.
前記ギャップ保持部は、熱可塑性であり、
前記応力吸収層の形成工程は、前記ギャップ保持部に熱及び圧力を加える工程を含む半導体装置の製造方法。 The method of manufacturing a semiconductor device according to claim 8.
The gap holding part is thermoplastic,
The method of forming a stress absorbing layer includes a step of applying heat and pressure to the gap holding portion.
前記圧力を加える工程では、前記ギャップ保持部の加圧位置を徐々にずらして部分的な加圧が連続的に行われる半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 9,
The method of manufacturing a semiconductor device, wherein in the step of applying pressure, partial pressurization is continuously performed by gradually shifting the pressurization position of the gap holding portion.
前記ギャップ保持部は、前記フレキシブル基板における前記半導体チップの電極を有する面に相対向して配置される面側にのみ設けられる半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 1,
The said gap holding part is a manufacturing method of the semiconductor device provided only in the surface side arrange | positioned facing the surface which has the electrode of the said semiconductor chip in the said flexible substrate.
前記ギャップ保持部を設ける工程は、前記フレキシブル基板における前記半導体チップ側の面に設けられる配線パターンを形成する工程に含まれ、
前記配線パターンを形成する工程にて、所望の箇所をエッチングして１つの前記配線パターンに複数の凸部を形成する半導体装置の製造方法。 The method of manufacturing a semiconductor device according to claim 11.
The step of providing the gap holding part is included in the step of forming a wiring pattern provided on the surface of the flexible substrate on the semiconductor chip side,
A method of manufacturing a semiconductor device, wherein a plurality of convex portions are formed in one wiring pattern by etching a desired portion in the step of forming the wiring pattern.
前記フレキシブル基板における前記凸部に対応する位置に貫通孔が設けられ、前記フレキシブル基板の前記配線パターンの設けられた面とは反対側の面に前記貫通孔を介して前記外部電極が設けられる半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 12,
A semiconductor in which a through hole is provided at a position corresponding to the convex portion in the flexible substrate, and the external electrode is provided on the surface of the flexible substrate opposite to the surface on which the wiring pattern is provided via the through hole. Device manufacturing method.
前記ギャップ保持部としての前記凸部の少なくとも前記半導体チップと対向する位置に絶縁樹脂を塗布する工程を含む半導体装置の製造方法。 14. The method of manufacturing a semiconductor device according to claim 13,
A method for manufacturing a semiconductor device, comprising: applying an insulating resin to at least a position of the convex portion as the gap holding portion facing the semiconductor chip.
前記半導体チップ上において、前記半導体チップとは所定のギャップをあけて且つ重なるように配置されるとともに、前記重なった領域内に外部電極形成部が位置し、前記外部電極形成部と電気的に接続されており前記半導体チップの電極に接合される接合部を有するフレキシブル基板と、
前記外部端子形成部に対応する位置に設けられるとともに前記ギャップを保持するためのギャップ保持部と、
を含む半導体装置。 A semiconductor chip having electrodes;
On the semiconductor chip, the semiconductor chip is arranged so as to overlap with the semiconductor chip with a predetermined gap, and an external electrode forming part is located in the overlapping region, and is electrically connected to the external electrode forming part. A flexible substrate having a bonding portion bonded to the electrode of the semiconductor chip,
A gap holding portion provided at a position corresponding to the external terminal forming portion and holding the gap;
A semiconductor device including:
前記フレキシブル基板の前記重なった領域内には、前記半導体チップの能動領域が位置してなる半導体装置。 The semiconductor device according to claim 15, wherein
A semiconductor device in which an active region of the semiconductor chip is located in the overlapping region of the flexible substrate.
更に、前記半導体チップと前記フレキシブル基板との間に位置する応力吸収層を含む半導体装置。 The semiconductor device according to claim 15, wherein
Furthermore, a semiconductor device including a stress absorption layer located between the semiconductor chip and the flexible substrate.
前記ギャップ保持部は、前記フレキシブル基板の配線パターンの少なくとも一部を用いてなる半導体装置。 The semiconductor device according to claim 15, wherein
The gap holding unit is a semiconductor device using at least a part of a wiring pattern of the flexible substrate.
１つの前記配線パターンには複数の凸部が設けられ、前記複数の凸部のうち少なくとも一つは前記ギャップ保持部となり、他の凸部のうちの少なくとも一つは前記半導体チップの電極との接合部となる半導体装置。 The semiconductor device according to claim 18.
One wiring pattern is provided with a plurality of convex portions, at least one of the plurality of convex portions serves as the gap holding portion, and at least one of the other convex portions is connected to an electrode of the semiconductor chip. A semiconductor device to be a junction.
前記フレキシブル基板における前記配線パターンの設けられた側とは反対側の、前記ギャップ保持部となる凸部の設けられた位置に相対する位置に外部電極が形成されてなる半導体装置。 The semiconductor device according to claim 19, wherein
A semiconductor device in which an external electrode is formed at a position on the opposite side of the flexible substrate to the side where the wiring pattern is provided, opposite to the position where the convex portion serving as the gap holding portion is provided.
前記ギャップ保持部は樹脂からなり、応力吸収層を兼ねる半導体装置。 The semiconductor device according to claim 15, wherein
The gap holding part is made of a resin and serves as a stress absorbing layer.
前記樹脂は、熱可塑性の樹脂からなる半導体装置。 The semiconductor device according to claim 21, wherein
The resin is a semiconductor device made of a thermoplastic resin.
前記半導体装置との接続部を有し、
前記半導体装置の前記外部電極形成部上に形成された外部電極が直接前記接続部に接続されることにより、前記半導体装置が搭載された回路基板。 The circuit board according to claim 23,
Having a connection with the semiconductor device;
A circuit board on which the semiconductor device is mounted by connecting an external electrode formed on the external electrode forming portion of the semiconductor device directly to the connecting portion.
前記接合部を有する側の前記接合部を除く位置に、樹脂からなるギャップ保持部が設けられてなるフレキシブル基板。 A flexible substrate having a bonding portion bonded to an electrode of a semiconductor chip,
A flexible substrate in which a gap holding portion made of a resin is provided at a position excluding the bonding portion on the side having the bonding portion.
前記ギャップ保持部は、熱可塑性の樹脂からなるフレキシブル基板。
The flexible substrate according to claim 25, wherein
The gap holding part is a flexible substrate made of a thermoplastic resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005226563A JP4484072B2 (en) | 1996-10-17 | 2005-08-04 | Semiconductor device, circuit board, and manufacturing method of semiconductor device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29753096 | 1996-10-17 | ||
| JP2005226563A JP4484072B2 (en) | 1996-10-17 | 2005-08-04 | Semiconductor device, circuit board, and manufacturing method of semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51551398A Division JP3944915B2 (en) | 1996-10-17 | 1997-09-29 | Manufacturing method of semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007184793A Division JP4572375B2 (en) | 1996-10-17 | 2007-07-13 | Manufacturing method of semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005354104A JP2005354104A (en) | 2005-12-22 |
| JP2005354104A5 true JP2005354104A5 (en) | 2006-08-24 |
| JP4484072B2 JP4484072B2 (en) | 2010-06-16 |
Family
ID=35588229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005226563A Expired - Fee Related JP4484072B2 (en) | 1996-10-17 | 2005-08-04 | Semiconductor device, circuit board, and manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4484072B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021037808A2 (en) * | 2019-08-26 | 2021-03-04 | X-Celeprint Limited | Variable stiffness modules |
-
2005
- 2005-08-04 JP JP2005226563A patent/JP4484072B2/en not_active Expired - Fee Related
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