JP2005129630A - Purge nozzle and exposure device using the same, and method of manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To shorten a time duration from which, oxygen, moisture concentrations become below predetermined values by holding an inert gas purity in an inert gas filling space in a high purity by blowing off the inert gas from a nozzle at a uniform flowing velocity. <P>SOLUTION: A purge nozzle includes a porous plate having a plurality of fine holes formed at an inert gas blowing-off part of the nozzle. Thus, the inert gas is made for this to blow off at the uniform flowing velocity. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a purge nozzle for blowing an inert gas into an inert gas filling space, an exposure apparatus that irradiates a photosensitive substrate with a pattern of a mask through a projection optical system, the exposure apparatus using the purge nozzle, and the exposure apparatus The present invention relates to a device manufacturing method using an exposure apparatus.

  Conventionally, in a manufacturing process of a semiconductor element formed from an ultrafine pattern such as LSI or VLSI, a circuit pattern drawn on a mask such as a reticle is projected onto a substrate coated with a photosensitive agent by being reduced and projected. A reduction type projection exposure apparatus is used. As the mounting density of semiconductor elements has increased, further miniaturization of patterns has been demanded, and at the same time as the progress of processes such as resists, the miniaturization of exposure apparatuses has been addressed.

As means for improving the resolution of the exposure apparatus, there are a method of changing the exposure wavelength to a shorter wavelength and a method of increasing the numerical aperture (NA) of the projection optical system.
For shortening the exposure wavelength, the KrF excimer laser having an oscillation wavelength near 248 nm from the i-line at 365 nm, the ArF excimer laser having an oscillation wavelength near 193 nm, and fluorine having an oscillation wavelength near 157 nm (F ₂ ) An exposure apparatus using an excimer laser as a light source has been developed.

In the deep ultraviolet, particularly ArF excimer laser having a wavelength near 193 nm and fluorine (F ₂ ) excimer laser having an oscillation wavelength near 157 nm, there are a plurality of oxygen (O ₂ ) absorption bands in the band near these wavelengths. It is known.

For example, a fluorine excimer laser has a wavelength as short as 157 nm, and is therefore being applied to an exposure apparatus. The wavelength of 157 nm is generally in a wavelength region called vacuum ultraviolet. Light in this wavelength region is greatly absorbed by oxygen molecules, that is, hardly transmits through the atmosphere, and can be applied only in an environment where the atmospheric pressure is lowered to near vacuum and the oxygen concentration is sufficiently reduced. According to Non-Patent Document 1, the absorption coefficient of oxygen with respect to light having a wavelength of 157 nm is about 190 atm ⁻¹ cm ⁻¹ . This means that when light having a wavelength of 157 nm passes through a gas having an oxygen concentration of 1% at 1 atmosphere, the transmittance per 1 cm is T = exp (−190 × 1 cm × 0.01 atm) = 0.150.
It shows that there is only it.

Therefore, in the optical path of the exposure optical system of the projection exposure apparatus using far ultraviolet light as the light source such as ArF excimer laser and fluorine (F ₂ ) excimer laser, oxygen present in the optical path is obtained by purging with an inert gas such as nitrogen. A method is used in which the concentration is kept at a low level of several ppm order or less. Thus, deep-UV especially ArF excimer laser and having a wavelength of about 193 nm, in an exposure apparatus using a fluorine _{(F 2)} excimer laser light having a wavelength of about 157nm may or ArF excimer laser beam, fluorine _{(F 2} ) Since excimer laser light is very easily absorbed by the material, it is necessary to purge the light absorbing material in the optical path to several ppm order or less. The same can be said for moisture, and removal to the order of ppm or less is still necessary. For this reason, in the exposure apparatus, the ultraviolet light path such as the wafer stage and the reticle stage is purged with an inert gas in order to ensure the transmittance of ultraviolet light or its stability.

  For example, in Patent Documents 1 to 3, an inert gas is blown toward a wafer or a reticle, or a cover that encloses an ultraviolet light path from the wafer-side lower end of the projection optical system toward the vicinity of the wafer stage and the reticle-side lower end of the illumination optical system. It is disclosed that a cover surrounding the ultraviolet light path is provided from the portion toward the vicinity of the reticle stage, and an inert gas is blown into each cover. However, since all of them are purged with a nozzle having only the inert gas introduction part and the inert gas blowing part having the same cross-sectional area, the inert gas filling space over a wide range is uniformly purged with the inert gas. In order to achieve this, it is necessary to provide a large number of nozzles and uniformly blow an inert gas from each nozzle. As a result, there arises a problem that the purge system is complicated and the apparatus is enlarged. Hereinafter, the inert gas filling space is referred to as a purge space.

  Further, the flow of the inert gas at the nozzle blowing portion can be biased, and it takes a lot of time until the oxygen and moisture concentrations in the purge space become equal to or less than the predetermined values, or the oxygen and moisture concentrations in the purge space are reduced. There is a problem that unevenness occurs. Furthermore, due to fluctuations in the supply pressure of the inert gas, the blowing speed fluctuates over time, or turbulence occurs and vortices are generated in the vicinity of the nozzle blowing section, which induces reverse flow and swirling flow from outside the purge space. However, there is a problem that the oxygen and moisture concentrations inside the purge space do not become lower than predetermined values.

  Further, in order to uniformly purge the interior of the purge space over a wide range with a small number of nozzles with an inert gas, the flow path cross-sectional area of the nozzle as shown in FIG. 8 is directed from the inert gas introduction part toward the blowing part. A spread tube type nozzle that can be gradually widened is conceivable. However, if the nozzle spread angle θ is suddenly increased, the fluid will peel off from the inner wall of the nozzle and a strong vortex flow will occur around it, so the spread angle θ must be made as small as possible. I must. For this reason, the distance L1 from the inert gas introduction part of a nozzle to a blowing part becomes long, and there exists a problem that a nozzle enlarges and leads to the enlargement of an apparatus by extension.

On the other hand, in Patent Document 4, by providing a nozzle whose gas blowing surface is formed of a porous body such as a sintered body, the gas flow is laminarized, and the reaction product adheres to the surface of the light transmission window. A CVD apparatus for preventing the above is disclosed. Since this porous body is a porous material obtained by sintering granular metal as shown in FIG. 9, the fluid flows through the gaps between the grains. Therefore, since the distance until the fluid passes through the porous body is increased, the contact area between the fluid and the porous body is increased, and oxygen and moisture attached to the fluid contact surface portion of the porous body are not easily separated. There is a problem that gas is contaminated.
JP-A-6-260385 JP-A-8-279458 Japanese Patent Application No. 2000-179590 Japanese Patent Laid-Open No. 2-79420 Photochemistry of Small Moleculares "(Hideo Okabe, A Wiley-Interscience Publication, 1978, p. 178)

As described above, in an exposure apparatus using ultraviolet light, particularly ArF excimer laser light or fluorine (F ₂ ) excimer laser light, absorption of light of these wavelengths by oxygen and water is large, so that sufficient transmittance and stability of ultraviolet light are obtained. In order to obtain the characteristics, it is necessary to reduce the concentration of oxygen and moisture in the optical path. Therefore, it is desired to develop an effective purging means for an ultraviolet light path in the exposure apparatus, particularly a wafer or reticle near the wafer that is frequently taken in and out of the exposure apparatus.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a purge nozzle that can uniformly blow out an inert gas. It is another object of the present invention to provide an apparatus for partially effectively purging an optical path in an exposure apparatus with an inert gas in an exposure apparatus that irradiates a photosensitive substrate with a mask pattern via a projection optical system.

In order to achieve the above object, a purge nozzle according to the present invention includes an inert gas introduction path for introducing an inert gas, and a blowing portion for blowing the introduced inert gas into the inert gas filling space. And a perforated plate is disposed in the blowing portion.
An exposure apparatus according to the present invention includes the purge nozzle.

The exposure apparatus of the present invention is not limited with respect to configurations other than those specified in the claims.
Although ultraviolet light as exposure light used in the exposure apparatus of the present invention is not limited, as described in the prior art, far ultraviolet light, particularly ArF excimer laser having a wavelength near 193 nm, fluorine having a wavelength near 157 nm (F ₂ The purge means according to the present invention is particularly effective for excimer laser light.

According to the present invention, it is possible to reduce the variation of the blowing speed due to the nonuniformity of the supply pressure in the blowing surface and the temporal fluctuation of the supply pressure of the inert gas, and the inert gas can be blown out uniformly. . Further, in an exposure apparatus using ultraviolet rays, particularly ArF excimer laser light or fluorine (F ₂ ) excimer laser light, by using the purge nozzle of the present invention, oxygen and oxygen can be partially and effectively in the vicinity of the reticle and wafer. It became possible to purge moisture. As a result, sufficient transmittance and stability of ArF excimer laser light and fluorine (F ₂ ) excimer laser light can be obtained, projection exposure can be performed with high accuracy, and fine circuit patterns are excellent. Can be projected on. Furthermore, since the time until oxygen or moisture reaches a predetermined concentration after the start of purging can be shortened, the productivity of the exposure apparatus can be improved.

The embodiments of the present invention are listed below.
[Embodiment 1] A purge nozzle, which is hereinafter referred to as a purge space, is a nozzle for injecting an inert gas, wherein a perforated plate is disposed in a blowing portion or an inert gas introduction path.
[Embodiment 2] The purge nozzle according to embodiment 1, wherein the perforated plate is formed of a plurality of fine holes, and the total opening area thereof is smaller than the cross-sectional area of the blowing portion.
[Embodiment 3] The purge nozzle according to Embodiment 1 or 2, wherein a cross-sectional area of the introduction path is smaller than a cross-sectional area of the blowing portion.
[Embodiment 4] Embodiments 1 to 3, wherein when an inert gas having a predetermined flow rate is circulated through the purge space, the pressure on the upstream side of the porous plate is higher than that on the downstream side of the porous plate. 4. The purge nozzle according to any one of 3.
[Embodiment 5] The purge nozzle according to any one of Embodiments 1 to 4, wherein the porous plate is a plate-like body in which fine holes are dispersed.
[Embodiment 6] The purge nozzle according to any one of Embodiments 1 to 5, wherein the hole has a round shape or a polygonal shape.
[Embodiment 7] The purge nozzle according to any one of Embodiments 1 to 6, wherein the hole is processed by etching, laser, electron beam, or electric discharge machine.
[Embodiment 8] The purge nozzle according to any one of Embodiments 1 to 6, wherein the perforated plate is a net formed by braiding metal or resin fine wires.
[Embodiment 9] An exposure apparatus comprising the purge nozzle according to any one of Embodiments 1 to 8.
[Embodiment 10] The exposure apparatus according to Embodiment 9, wherein a fluorine or ArF excimer laser is used as a light source.
[Embodiment 11] The exposure apparatus according to Embodiment 9 or 10, wherein the inert gas is any one of nitrogen, helium, and argon.
[Embodiment 12] The exposure apparatus according to Embodiments 9 to 11, further comprising means for mixing oxygen (O ₂ ) and / or ozone (O ₃ ) with the inert gas.
[Embodiment 13] The exposure apparatus according to any one of Embodiments 9 to 12, further comprising means for switching and blowing the inert gas and the mixed gas of claim 13.

Embodiments of the present invention will be described below with reference to the drawings.
[Example 1]
FIG. 1 is a schematic view of a purge nozzle 1 according to an embodiment of the present invention. An inert gas introduction path 2 for introducing an inert gas is provided in the purge nozzle 1, and a perforated plate 4 is disposed in the blowing portion 3.
One or two or more inert gas introduction paths 2 may be provided, or the inert gas introduction paths 2 may be arranged in either a vertical direction or an oblique direction with respect to the blowing direction (arrow). Further, the perforated plate 4 may be disposed in the inert gas introduction path 2 together with the blowing portion 3. As shown in FIG. 2, the porous plate 4 is a plate-like body in which a plurality of fine holes are formed, and the shape of the holes may be round, polygonal, or other shapes. The total opening area A4 is smaller than the area of the blowing surface (cross-sectional area of the blowing part 3) A3. Further, the cross-sectional area A2 of the inert gas introduction path 2 is also smaller than the area A3 of the blowing surface.

  By doing in this way, the speed of the inert gas which flowed into the purge nozzle 1 from the inert gas introduction path | route 2 decelerates, since a flow-path cross-sectional area expands rapidly. At this point, it is still in a state with a large velocity distribution. And since the perforated plate 4 arrange | positioned at the blowing part 3 becomes a resistor, the flow of an inert gas is stopped to some extent. As a result, the pressure of the inert gas upstream of the porous plate 4 is higher than that of the downstream side of the porous plate 4, and the pressure of the inert gas inside the purge nozzle 1 is made uniform. The equalized inert gas is blown out from the plurality of fine holes of the perforated plate 4 at a uniform speed (FIG. 3). Thereby, temporal fluctuations in the blowing speed due to deviations in the blowing speed in the blowing surface and fluctuations in the supply pressure of the inert gas are reduced, and the inert gas can be blown out uniformly and continuously. Further, when the perforated plate 4 is disposed in the blowing portion 3 and the inert gas introduction path 2, the supply pressure of the inert gas can be made more uniform.

  In addition, when uniformly purging the interior of the purge space over a wide range with an inert gas, the number of nozzles is increased in a conventional nozzle only having an inert gas introduction part and an inert gas blowing part having the same cross-sectional area. Although necessary, by using the purge nozzle 1 provided with the perforated plate 4, the number of nozzles can be reduced to the minimum, and the purge system can be simplified. Furthermore, since the spread angle θ as shown in FIG. 8 is not required, the distance L1 from the inert gas introduction path 2 to the blowing portion 3 is shortened as shown in FIG. 4, and the purge nozzle 1 can be made compact. . For this reason, it is possible to reduce the size of the apparatus in which the purge nozzle 1 is mounted.

  Here, it is said that the pressure loss value of the conventional porous body is proportional to the square to the square of the plate thickness and the flow velocity, and inversely proportional to the hole diameter. In the purge nozzle 1 of this embodiment, when an inert gas having a predetermined flow rate is passed through the purge nozzle 1, the pressure on the upstream side of the porous plate 4 is higher than that on the downstream side of the porous plate 4. Moreover, it is desirable to make the size of the hole of the porous plate 4 as small as possible. For example, when the hole is made larger than the small hole, an equivalent pressure loss cannot be obtained unless the total area of the holes is made smaller. Therefore, when the holes are enlarged, the number of holes must be extremely reduced, the hole interval P is increased, and there is a disadvantage that a dead space without a flow increases and the flow is disturbed. In order to solve this, it is necessary to arrange small holes close to each other.

  On the other hand, as the perforated plate 4, a metal thin plate etched or micro-hole processed by a laser, an electron beam or an electric discharge machine, or a net formed by weaving metal or resin fine wires is used. Can be used. In any case, the contact area between the fluid and the porous plate 4 is small because the fluid can pass through the porous plate 4 at the shortest distance as compared with the porous body such as the sintered body shown in FIG. There is an advantage that oxygen, moisture, etc. adhering to the water can be removed quickly.

Moreover, the following two patterns can be considered about the arrangement | sequence of a hole.
a. Uniform arrangement in which the holes having the same shape (FIG. 2) are arranged at equal intervals. In this case, by providing uniform resistance, the wind speed distribution in the blowout surface can be made uniform without unevenness.
b. For example, when there is an obstruction that obstructs the flow in a part of the purge space, the downstream side of the obstruction is located elsewhere. As a result, the flow becomes weaker than that, and there is a possibility that unevenness of oxygen and moisture concentration may occur. Therefore, it is necessary to spray the place where the obstacle exists at a wind speed stronger than other places. In such a case, the equivalent diameter D and the hole interval P of the holes to be blown to the obstacles may be changed to be arranged in an unequal arrangement that positively biases the wind speed distribution in the blowing section 3.

In addition, the inert gas introduction path 2 for introducing the inert gas into the purge nozzle 1 arranges the central portion of the purge nozzle 1 symmetrically at an equal distance in order to make the wind velocity distribution in the blowing surface more uniform. It is desirable. However, due to problems such as the shape of the purge nozzle 1, the inert gas introduction path 2 may not be evenly arranged. At this time, a slight deviation occurs in the wind speed distribution in the blowing surface. Even in such a case, by arranging the holes with the equivalent diameter D and the hole interval P being changed, the wind speed distribution in the blowout surface can be made uniform without any deviation.
[Example 2]

FIG. 5 is a schematic view of the projection exposure apparatus provided with the purge nozzle described in the first embodiment. Ultraviolet light introduced from an unillustrated ultraviolet light source into the illumination optical system 11 in the exposure apparatus is placed on the reticle stage 12 and held by a reticle holder (not shown) provided on the reticle stage 12. The reticle 13 is irradiated. A cover 14R that surrounds the ultraviolet light path from the lower end of the illumination optical system 11 toward the reticle stage 12 is provided, and a purge nozzle 1R that blows a purge gas made of an inert gas is provided inside the cover 14R. The gap between the lower end of the cover 14R and the reticle 13 is L2. The gap L2 is necessary to avoid interference between the reticle 13 and the cover 14R because the reticle 13 moves on the reticle stage 12. However, by making the gap L2 as small as possible, the air tightness inside the cover is increased and the purge efficiency can be improved. The ultraviolet light transmitted through the reticle 13 passes through the projection optical system 15 and irradiates the wafer 17 placed on the wafer stage 16. A cover 14W that surrounds the ultraviolet light path from the lower end of the projection optical system 15 toward the wafer stage 16 is provided near the wafer stage 16, and a purge nozzle 1W that blows a purge gas made of an inert gas is provided inside the cover 14W. The gap between the lower end of the cover 14W and the wafer 17 is L3. As with the cover 14R, the purge efficiency can be improved by minimizing the gap L3.
In FIG. 5, 18 is a projection optical system sheet glass, 19 is an illumination optical system sheet glass, 20 is a reticle surface plate, 21 is a projection optical system surface plate, 22 is a projection optical system surface plate damper, 23 is a stage damper, and 24 is a stage damper. This is a wafer stage surface plate.
Through an inert gas supply device (not shown), inert gas such as nitrogen, helium and argon or a mixed gas thereof is blown from the purge nozzles 1R and 1W into the cover 14R and 14W, and exposure hazard such as oxygen and moisture is caused. Things have been purged. Exposure harmful substances are purged with an inert gas in the projection optical system 15 and the illumination optical system 11 and also in other exposure optical paths.

A unique effect achieved by doing so will be described.
Due to the effect of the purge nozzle 1 described in the first embodiment, the time required for the oxygen and moisture concentrations in the purge space to be equal to or lower than predetermined values is shortened, and unevenness in the oxygen or moisture concentration in the purge space is reduced.
In addition, since the flow of the inert gas at the blowing portion 3 of the purge nozzle 1 becomes a laminar flow, the blowing speed of the inert gas fluctuates with time, or a turbulent state occurs and a vortex is generated in the vicinity of the nozzle blowing portion 3. It is possible to solve the conventional problem that the reverse flow and the revolving flow from the outside of the purge space are generated and the oxygen and moisture concentrations inside the purge space do not reach predetermined values.
Further, since the number of nozzles can be reduced and the distance L1 (see FIGS. 4 and 8) from the inert gas introduction path 2 of the purge nozzle 1 to the blowing portion 3 can be shortened, the degree of freedom in disposing the purge nozzle 1 is great. Therefore, the exposure apparatus can be reduced in size.

Here, two purge nozzles 1R and 1W are arranged opposite to each other for purging in the space of reticle stage 12 and wafer stage 16, but there are no restrictions on the number and layout of purge nozzles 1R and 1W. In addition, the purge nozzle 1 of the present embodiment includes an inert gas blowing unit supplied to the projection optical system 15 and the illumination optical system 11, or an inert gas blowing unit provided in the load lock chamber of the wafer 17 and the reticle 13. It can be freely placed in other places.
[Example 3]

In the second embodiment, a purge gas made of an inert gas such as nitrogen, helium, or argon is blown by each purge nozzle 1, but the exposure apparatus of the present embodiment further includes oxygen (O ₂ ) and / or Or means (not shown) for mixing ozone (O ₃ ) is also provided. During normal exposure, oxygen (O ₂ ) and / or ozone (O ₃ ) is not mixed, and only an inert gas is blown, but during normal exposure during standby when the exposure apparatus is not operating or at a specified time interval. Alternatively, when the reticle 13 is placed on the reticle stage 12, the wafer 17 is placed in a state where a trace amount of oxygen (O ₂ ) and / or ozone (O ₃ ) is mixed with an inert gas to purge a predetermined area. Without carrying in, a dummy exposure operation is performed for a certain period of time or until the specified image surface illuminance is reached. Thereafter, the mixing of oxygen (O ₂ ) and / or ozone (O ₃ ) is stopped again and only an inert gas is blown to purge, thereby performing a normal exposure operation.

  A unique effect achieved by doing so will be described. Short-wavelength exposure light, such as deep ultraviolet light, especially ArF excimer laser and fluorine excimer laser, decomposes impurities such as organic molecules in the gas, and the decomposition products adhere to the optical element, and carbon on the surface of the optical element A film or a film containing carbon, ie, an organic compound deposit, is formed. Therefore, although gradually, the light transmittance of the optical element is reduced, the image surface illuminance is lowered and the throughput is lowered.

  On the other hand, in the exposure apparatus as shown in the second embodiment, the vicinity of the reticle 13 or the wafer 17 may be purged with an inert gas to reduce the impurity concentration to the limit but may remain in a very small amount. Further, for example, during or before exposure, degassing occurs from the resist applied to the wafer 17 or the adhesive layer between the resist and the wafer 17, and impurities are present in the vicinity of the sheet glass 18 at the lower end of the projection optical system 15. May exist. Further, for example, the reticle 13 to which a small amount of impurities are attached is carried in and part of the impurities is evaporated, or degassing occurs from the adhesive layer between the reticle 13 and the pellicle frame, or from the adhesive layer between the pellicle frame and the pellicle 25. In some cases, impurities may be present near the exposure surface of the reticle 13, the sheet glass 19 at the lower end of the illumination optical system 11, or the optical element surface at the upper end of the projection optical system 15. In these cases, the organic compound decomposed and generated by exposure adheres to these optical elements and accumulates, and the light transmittance gradually decreases.

In such a case, when a small amount of ozone is mixed with an inert gas and purged with exposure light to these optical elements, the organic compound deposited is oxidized and decomposed by a so-called ozone cleaning effect, and the decomposition product. Is prevented from accumulating. Alternatively, when exposure light is applied to these optical elements in a state where a trace amount of oxygen is mixed with an inert gas and purged, oxygen is converted into ozone by a photochemical reaction, so ozone cleaning similar to that when ozone is mixed An effect is obtained. Therefore, by periodically performing this as described above, it is possible to prevent a decrease in image plane illuminance and always maintain a high throughput.
[Example 4]

  Next, an embodiment of a device manufacturing method using the above-described exposure apparatus will be described. FIG. 6 shows a manufacturing flow of a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 1 (circuit design), a device pattern is designed. In step 2 (mask production), a mask on which the designed pattern is formed is produced. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon or glass. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is referred to as a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like. including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).

  FIG. 7 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed onto the wafer by exposure using the exposure apparatus having the purge nozzle described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. By using the production method of the fourth embodiment, a highly integrated device that has been difficult to manufacture can be manufactured at low cost.

It is a schematic block diagram of the purge nozzle which concerns on one Example of this invention. It is a front view of the perforated plate in FIG. It is a schematic sectional drawing showing the flow of the inert gas at the time of passing the perforated plate in FIG. It is a figure of the wind speed distribution in the purge nozzle of this invention. It is a schematic block diagram of the projection exposure apparatus which concerns on Example 2 of this invention. It is a figure which shows the flow of manufacture of a device. It is a figure which shows the detailed flow of the wafer process in FIG. It is a figure of the wind speed distribution in the conventional nozzle. It is a schematic sectional drawing showing the flow of the fluid at the time of passing the conventional porous body.

Explanation of symbols

1 Purge nozzle 2 Inert gas introduction path 3 Blowout part 4 Perforated plate

Claims (13)

  A nozzle having an inert gas introduction path for introducing an inert gas and a blowing portion for blowing the introduced inert gas into the inert gas filling space, and a perforated plate is disposed in the blowing portion A purge nozzle characterized by that.   The purge nozzle according to claim 1, wherein a second perforated plate is disposed in the inert gas introduction path.   The purge nozzle according to claim 1 or 2, wherein a cross-sectional area of the inert gas introduction path is smaller than a cross-sectional area of the blowing portion.   The purge nozzle according to any one of claims 1 to 3, wherein the perforated plate is a plate-like body provided with fine holes dispersed therein.   The purge nozzle according to any one of claims 1 to 4, wherein a shape of the hole of the perforated plate is round or polygonal.   The purge nozzle according to any one of claims 1 to 5, wherein the perforated plate is formed by forming holes in a metal plate by etching or using a laser, an electron beam, or an electric discharge machine.   The purge nozzle according to any one of claims 1 to 6, wherein the perforated plate is a net formed by braiding metal or resin fine wires.   An exposure apparatus comprising the purge nozzle according to claim 1.   9. The exposure apparatus according to claim 8, wherein a fluorine excimer laser or an ArF excimer laser is used as a light source.   10. The exposure apparatus according to claim 8, wherein the inert gas is any one of nitrogen, helium and argon, or a mixed gas thereof. The exposure apparatus according to any one of claims 8 to 10, further comprising means for mixing oxygen (O ₂ ) and / or ozone (O ₃ ) with the inert gas.   12. The exposure apparatus according to claim 8, further comprising means for switching and blowing the inert gas and the mixed gas of claim 11.   A device manufacturing method comprising manufacturing a device using the exposure apparatus according to claim 8.