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JP2005101572A - Substrate washing method and its equipment - Google Patents

Substrate washing method and its equipment Download PDF

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JP2005101572A
JP2005101572A JP2004243821A JP2004243821A JP2005101572A JP 2005101572 A JP2005101572 A JP 2005101572A JP 2004243821 A JP2004243821 A JP 2004243821A JP 2004243821 A JP2004243821 A JP 2004243821A JP 2005101572 A JP2005101572 A JP 2005101572A
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pure water
treatment
water treatment
substrate
specific resistance
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Hajime Shirakawa
元 白川
Atsushi Osawa
篤史 大澤
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Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Priority to JP2004243821A priority Critical patent/JP2005101572A/en
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Priority to US11/208,811 priority patent/US20060043073A1/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment method and its equipment which can improve throughput and reduce the consumption of deionized water by shortening deionized water treatment time before the last deionized water treatment. <P>SOLUTION: In the last deionized water treatment (step S4), treatment is finished by whether the resistivity of treatment liquid containing deionized water reached reference resistivity (step S5). In deionized water treatment (step S3) before the last deionized water treatment, treatment is finished by shortened deionized water treatment time, so that deionized water treatment time is shortened while a good device performance is maintained, and throughput can be improved. Further, since deionized water treatment is finished for a short time, consumption of deionized water can be also reduced, and loading of waste water treatment can be reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

この発明は、半導体ウエハ、フォトマスク用のガラス基板、液晶表示装置用のガラス基板、光ディスク用の基板など(以下、単に基板と称する)に対して薬液処理を行った後、純水を含む処理液により純水処理を行う基板処理方法及びその装置に関する。   In the present invention, after a chemical treatment is performed on a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display device, a substrate for an optical disk (hereinafter simply referred to as a substrate), a treatment containing pure water The present invention relates to a substrate processing method and apparatus for performing pure water treatment with a liquid.

従来のこの種の方法を実施する装置としては、薬液を貯留する第1の処理槽と、純水を貯留する第1の純水処理槽と、薬液を貯留する第2の処理槽と、純水を貯留する第2の純水処理槽と、第1及び第2の純水処理槽内の比抵抗値をそれぞれ測定する測定器とを備えたものが挙げられる。   As a conventional apparatus for carrying out this type of method, a first treatment tank for storing a chemical solution, a first pure water treatment tank for storing pure water, a second treatment tank for storing a chemical solution, What was provided with the 2nd pure water processing tank which stores water, and the measuring device which each measures the specific resistance value in a 1st and 2nd pure water processing tank is mentioned.

このような構成の装置では、第1または第2の処理槽にて薬液による処理を終えた基板を、第1または第2の純水処理槽に移動して純水で洗浄する。そして、測定器による比抵抗値の測定値が、予め定めた基準比抵抗値に達すると洗浄が完了したと判断して、基板を第2の処理槽に移動して次の処理液による処理を施したり、基板に対する一連の処理を終えたりするものが例示される(例えば、特許文献1参照)。なお、基準比抵抗値は、純水の比抵抗値に極めて近い値である。   In the apparatus having such a configuration, the substrate that has been treated with the chemical solution in the first or second treatment tank is moved to the first or second pure water treatment tank and washed with pure water. Then, when the measured value of the specific resistance value by the measuring instrument reaches a predetermined reference specific resistance value, it is determined that the cleaning is completed, and the substrate is moved to the second processing tank to be processed with the next processing liquid. Examples are those that perform or end a series of processing on the substrate (see, for example, Patent Document 1). The reference specific resistance value is very close to the specific resistance value of pure water.

また、一つの処理槽で薬液と純水を交互に入れ替えつつ処理する基板処理装置であっても、上記と同様に、薬液を純水に置換し、その時の純水を含む処理液の比抵抗値が基準比抵抗値に達するまで純水洗浄を行った後に、次の処理に移行する。
特開2001−210616号公報
In addition, even in the case of a substrate processing apparatus that performs processing while alternately switching the chemical solution and pure water in one processing tank, the chemical solution is replaced with pure water, and the specific resistance of the processing solution containing pure water at that time is the same as described above. After performing pure water cleaning until the value reaches the reference specific resistance value, the process proceeds to the next process.
JP 2001-210616 A

しかしながら、このような構成を有する従来例の場合には、次のような問題がある。   However, the conventional example having such a configuration has the following problems.

すなわち、従来の方法は、基準比抵抗値に達するまで純水洗浄を継続するので、純水による洗浄時間が長時間化してスループットが低下するとともに、純水の消費量が非常に多くなるという問題がある。なお、洗浄に用いた純水には他の薬液などが極微量ながら含まれている関係上、そのまま排水することはできず、浄化処理を行った後に排水しなければならない。したがって、洗浄に使用する純水の消費量を低減することは大きな課題となっている。   In other words, since the conventional method continues with pure water cleaning until the reference specific resistance value is reached, there is a problem that the cleaning time with pure water is prolonged, throughput decreases, and the consumption of pure water becomes very large. There is. In addition, the pure water used for cleaning contains other chemicals in an extremely small amount, so that it cannot be drained as it is, and it must be drained after purification. Therefore, reducing the consumption of pure water used for cleaning is a major issue.

この発明は、このような事情に鑑みてなされたものであって、最終の純水処理よりも前の純水処理時間を短縮することにより、スループットを高めることができるとともに、純水の消費量を低減することができる基板処理方法及びその装置を提供することを目的とする。   The present invention has been made in view of such circumstances, and by reducing the pure water treatment time prior to the final pure water treatment, the throughput can be increased and the consumption of pure water. An object of the present invention is to provide a substrate processing method and apparatus capable of reducing the above.

この発明は、このような目的を達成するために、次のような構成をとる。   In order to achieve such an object, the present invention has the following configuration.

すなわち、請求項1に記載の発明は、基板に対して薬液処理を行った後、純水を含む処理液により純水処理を行う基板処理方法において、薬液処理を行った後に純水を供給し、純水処理では純水の基準比抵抗値より低い処理液を使用し、前記基準比抵抗値が得られるよりも短い純水処理時間で純水処理を終了することを特徴とするものである。   That is, the invention described in claim 1 is a substrate processing method in which a pure water treatment is performed with a treatment liquid containing pure water after the chemical treatment is performed on the substrate, and the pure water is supplied after the chemical treatment. The pure water treatment uses a treatment liquid lower than the reference specific resistance value of pure water, and the pure water treatment is completed in a shorter pure water treatment time than the reference specific resistance value is obtained. .

(作用・効果)薬液処理の後に純水を供給して純水洗浄を行い、その時に純水を含む処理液の比抵抗値が純水の基準比抵抗値に達するまで純水処理を行わなくても、つまり、純水の比抵抗値よりも低い値にしか比抵抗値が回復していない状態であっても、デバイス性能を良好に維持することができれば短い洗浄時間であっても許容することができる。   (Function / Effect) Pure water is supplied after chemical solution treatment and pure water cleaning is performed. At that time, pure water treatment is not performed until the specific resistance value of the treatment solution containing pure water reaches the reference specific resistance value of pure water. In other words, even if the specific resistance value is restored only to a value lower than the specific resistance value of pure water, a short cleaning time is allowed as long as the device performance can be maintained satisfactorily. be able to.

したがって、純水を含む処理液は、予め純水の基準比抵抗値よりも低い比抵抗値となり、基準比抵抗値の純水を使用した純水処理よりも短い種々の時間で処理液による純水処理を行った後、基板上のデバイスで性能を評価する。その結果、所要の性能を発揮できる洗浄処理時間を見つけ、それを短縮された純水処理時間として設定して、その時間で基板に対して純水処理を行えばよい。このように、短縮された純水処理時間で純水処理を終えることにより、デバイス性能を良好に維持しつつ、洗浄処理時間を短縮してスループットを高めることができ、純水の消費量も低減することができる。   Accordingly, the treatment liquid containing pure water has a specific resistance value lower than the reference specific resistance value of pure water in advance, and the pure water by the treatment liquid is used in various times shorter than pure water treatment using pure water having the reference specific resistance value. After water treatment, performance is evaluated with devices on the substrate. As a result, it is only necessary to find a cleaning processing time that can exhibit the required performance, set it as a shortened pure water processing time, and perform pure water processing on the substrate at that time. In this way, by completing the pure water treatment with a shortened pure water treatment time, while maintaining good device performance, the cleaning treatment time can be shortened to increase the throughput, and the consumption of pure water is also reduced. can do.

また、請求項2に記載の発明は、請求項1に記載の基板処理方法において、前記純水処理は、少なくとも二回以上の純水処理を含んでおり、前記純水処理のうち最終の純水処理よりも前に行う純水処理において、純水の基準比抵抗値より低い処理液を使用し、前記基準比抵抗値が得られるよりも短い純水処理時間で純水処理を終了することを特徴とするものである。   Further, the invention according to claim 2 is the substrate processing method according to claim 1, wherein the pure water treatment includes at least two times of pure water treatment, and the final pure water treatment is the final pure water treatment. In the pure water treatment performed prior to the water treatment, a treatment liquid lower than the reference specific resistance value of pure water is used, and the pure water treatment is completed in a shorter pure water treatment time than the reference specific resistance value is obtained. It is characterized by.

なお、ここでいう最終の純水処理とは、薬液処理の後の純水処理のうちの最終の純水処理のことをいう。   The final pure water treatment here refers to the final pure water treatment in the pure water treatment after the chemical treatment.

また、請求項3に記載の発明は、基板に対して薬液処理を行った後、純水を含む処理液により純水処理を行う基板処理方法において、処理槽内に貯留された薬液により基板に対する薬液処理を行い、前記処理槽へ純水を供給して、前記処理槽内を薬液から純水へ置換させつつ処理液により純水処理を行うとともに、薬液から純水への置換により処理液の比抵抗値が純水の基準比抵抗値になるよりも短い純水処理時間で純水処理を終了することを特徴とするものである。   According to a third aspect of the present invention, there is provided a substrate processing method for performing pure water treatment with a treatment liquid containing pure water after performing a chemical treatment on the substrate, and the chemical solution stored in the treatment tank is used for the substrate. Performs chemical treatment, supplies pure water to the treatment tank, performs pure water treatment with the treatment liquid while substituting the inside of the treatment tank from chemical liquid to pure water, and replaces the treatment liquid with pure water. The pure water treatment is completed in a shorter pure water treatment time than the specific resistance value becomes the reference specific resistance value of pure water.

(作用・効果)薬液処理の後に、純水を供給して処理槽内を薬液から純水へ置換させつつ処理液により純水処理を行い、そのときに純水を含む処理液の比抵抗値が純水の基準比抵抗値に達するまで純水処理を行わなくても、つまり、純水の比抵抗値よりも低い値にしか比抵抗値が回復していない状態であっても、デバイス性能を良好に維持することができれば、短い純水処理時間であっても許容することができる。   (Function / Effect) After the chemical treatment, pure water is supplied and the treatment tank is replaced with the pure water by replacing the chemical tank with the pure water. At that time, the specific resistance value of the treatment liquid containing pure water Device performance even if pure water treatment is not performed until the specific resistance value of pure water reaches the standard specific resistance value, that is, even if the specific resistance value is restored to a value lower than the specific resistance value of pure water. Can be tolerated even with a short pure water treatment time.

したがって、純水を含む処理液は、予め純水の基準比抵抗値よりも低い比抵抗値となり、基準比抵抗値の純水を使用した純水処理よりも短い種々の時間で処理液による純水処理を行った後、基板上のデバイスで性能を評価する。その結果、所要の性能を発揮できる洗浄処理時間を見つけ、それを短縮された純水処理時間として設定して、その時間で基板に対して純水処理を行えばよい。このように短縮された純水処理時間で純水処理を終えることにより、デバイス性能を良好に維持しつつ、純水処理時間を短縮してスループットを高めることができ、純水の消費量も低減できる。   Accordingly, the treatment liquid containing pure water has a specific resistance value lower than the reference specific resistance value of pure water in advance, and the pure water by the treatment liquid is used in various times shorter than pure water treatment using pure water having the reference specific resistance value. After water treatment, performance is evaluated with devices on the substrate. As a result, it is only necessary to find a cleaning processing time that can exhibit the required performance, set it as a shortened pure water processing time, and perform pure water processing on the substrate at that time. By completing the pure water treatment with the shortened pure water treatment time in this way, it is possible to shorten the pure water treatment time and increase the throughput while maintaining good device performance, and also reduce the consumption of pure water. it can.

また、請求項4に記載の発明は、請求項3に記載の基板処理方法において、前記純水処理は、少なくとも二回以上の純水処理を含んでおり、前記純水処理のうち最終の純水処理よりも前に行う純水処理において、前記処理槽内を薬液から純水へ置換させつつ処理液により純水処理を行うとともに、薬液から純水への置換により処理液の比抵抗値が純水の基準比抵抗値になるよりも短い純水処理時間で純水処理を終了することを特徴とするものである。   According to a fourth aspect of the present invention, there is provided the substrate processing method according to the third aspect, wherein the pure water treatment includes at least two times of pure water treatment. In pure water treatment performed prior to water treatment, pure water treatment is performed with the treatment liquid while replacing the inside of the treatment tank from chemical liquid to pure water, and the specific resistance value of the treatment liquid is reduced by substitution from the chemical liquid to pure water. The pure water treatment is completed in a pure water treatment time shorter than the reference specific resistance value of pure water.

また、請求項5に記載の発明は、請求項1から4のいずれかに記載の基板処理方法において、前記純水処理時間は、純水処理後におけるパーティクルの付着状態、金属汚染状態、及びエッチングの均一性のいずれかに基づいて予め設定することを特徴とするものである。   Further, the invention according to claim 5 is the substrate processing method according to any one of claims 1 to 4, wherein the pure water treatment time is a particle adhesion state, metal contamination state, and etching after the pure water treatment. It is characterized in that it is set in advance based on any one of the uniformity.

(作用・効果)純水洗浄後におけるパーティクルの付着状態、金属汚染状態、及びエッチングの均一性のいずれかを評価することにより、所要のデバイス性能が発揮できるための短縮された純水処理時間を決定することができる。   (Action / Effect) Evaluating any of the particle adhesion state, metal contamination state, and etching uniformity after pure water cleaning reduces the amount of time for pure water treatment to achieve the required device performance. Can be determined.

また、請求項6に記載の発明は、基板に対して薬液処理を行った後、純水を含む処理液により純水処理を行う基板処理装置において、薬液及び処理液を貯留する処理槽と、前記処理槽内において基板を保持する保持機構と、前記保持機構に保持された基板を前記処理槽内の薬液に浸漬させた状態で、前記処理槽内を薬液から純水へ置換させるように、純水を供給する純水供給部と、薬液から純水への置換により処理液の比抵抗値が純水の基準比抵抗値になるよりも短い純水処理時間を記憶する記憶部と、前記記憶部に記憶された純水処理時間により純水処理を行わせる制御部と、を備えていることを特徴とするものである。   Further, the invention according to claim 6 is a substrate processing apparatus for performing pure water treatment with a treatment liquid containing pure water after performing a chemical treatment on the substrate, and a treatment tank for storing the chemical liquid and the treatment liquid; In the state where the holding mechanism for holding the substrate in the treatment tank and the substrate held in the holding mechanism are immersed in the chemical solution in the treatment tank, the inside of the treatment tank is replaced with the pure liquid from the chemical solution, A pure water supply unit that supplies pure water; a storage unit that stores a pure water treatment time shorter than the specific resistance value of the treatment liquid becomes a reference specific resistance value of pure water by replacing the chemical liquid with pure water; and And a control unit that performs pure water treatment according to the pure water treatment time stored in the storage unit.

(作用・効果)薬液処理の後、純水供給部から純水を供給して処理槽内を薬液から純水へ置換させつつ処理液により純水処理を行い、そのときに純水を含む処理液の比抵抗値が純水の基準比抵抗値に達するまで純水処理を行わなくても、つまり、純水の比抵抗値よりも低い値にしか比抵抗値が回復していない状態であっても、デバイス性能を良好に維持することができれば、短い純水処理時間であっても許容することができる。   (Action / Effect) After the chemical treatment, pure water is supplied from the pure water supply unit, and the treatment tank is replaced with the pure water by replacing the chemical with pure water. Even if the pure water treatment is not performed until the specific resistance value of the liquid reaches the reference specific resistance value of pure water, that is, the specific resistance value has recovered only to a value lower than the specific resistance value of pure water. However, if the device performance can be maintained satisfactorily, even a short pure water treatment time can be tolerated.

したがって、純水を含む処理液は、予め純水の基準比抵抗値よりも低い比抵抗値となり、基準比抵抗値の純水を使用した純水処理よりも短い種々の時間で処理液による純水処理を行った後、基板上のデバイスで性能を評価する。その結果、所要の性能を発揮できる洗浄処理時間を見つけ、それを短縮された純水処理時間として記憶部に記憶し、制御部によりその時間で基板に対して純水処理を行えばよい。このように、短縮された純水処理時間で純水処理を終えることにより、デバイス性能を良好に維持しつつ、純水処理時間を短縮してスループットを高めることができ、純水の消費量も低減できる。   Accordingly, the treatment liquid containing pure water has a specific resistance value lower than the reference specific resistance value of pure water in advance, and the pure water by the treatment liquid is used in various times shorter than pure water treatment using pure water having the reference specific resistance value. After water treatment, performance is evaluated with devices on the substrate. As a result, a cleaning processing time capable of exhibiting the required performance is found, stored as a shortened pure water processing time in the storage unit, and the control unit performs the pure water processing on the substrate at that time. In this way, by completing the pure water treatment with the shortened pure water treatment time, while maintaining the device performance well, the pure water treatment time can be shortened to increase the throughput, and the consumption of pure water is also increased. Can be reduced.

また、前記処理槽内に貯留された処理液の比抵抗値を測定する測定部をさらに備えていることが好ましい(請求項7)。   Moreover, it is preferable to further include a measuring unit that measures the specific resistance value of the processing liquid stored in the processing tank.

また、請求項8に記載の発明は、基板に対して薬液処理を行った後、純水を含む処理液により純水処理を行う基板処理装置において、基板に対して処理液により純水処理を行う第1処理槽と、前記第1処理槽で純水処理を行った基板に対して薬液により薬液処理を行う第2処理槽と、前記第2処理槽で薬液処理を行った基板に対して処理液により純水処理を行う第3処理槽と、前記第1処理槽から前記第2処理槽へ基板を搬送するとともに、前記第2処理槽から前記第3処理槽へ基板を搬送する搬送機構と、前記第1処理槽における薬液から純水への置換により処理液の比抵抗値が純水の基準比抵抗値になるよりも短い純水処理時間を記憶する記憶部と、前記第1処理槽内において前記記憶部に記憶された純水処理時間により純水処理を行わせる制御部と、を備えていることを特徴とするものである。   According to an eighth aspect of the present invention, there is provided a substrate processing apparatus for performing pure water treatment with a treatment liquid containing pure water after performing chemical treatment on the substrate, and performing pure water treatment with the treatment liquid on the substrate. A first treatment tank to be performed, a second treatment tank for performing chemical treatment with a chemical solution on a substrate that has been subjected to pure water treatment in the first treatment tank, and a substrate subjected to chemical treatment in the second treatment tank. A third treatment tank that performs pure water treatment with a treatment liquid, and a conveyance mechanism that conveys the substrate from the first treatment tank to the second treatment tank and also conveys the substrate from the second treatment tank to the third treatment tank. And a storage unit for storing a pure water treatment time shorter than the specific resistance value of the treatment liquid becomes a reference specific resistance value of pure water by replacing the chemical liquid with pure water in the first treatment tank, and the first treatment Pure water treatment is performed in the tank by the pure water treatment time stored in the storage unit. It is characterized in that comprises a control unit that, the.

また、前記制御部は、前記第3処理槽において処理液の比抵抗値が純水の基準比抵抗値に達したことに基づいて、前記搬送機構により前記第3処理槽から基板を搬出させることが好ましい(請求項9)。   Further, the control unit causes the transport mechanism to unload the substrate from the third processing tank based on the fact that the specific resistance value of the processing liquid has reached the reference specific resistance value of pure water in the third processing tank. (Claim 9).

また、請求項10に記載の発明は、請求項6から9のいずれかに記載の基板処理装置において、前記純水処理時間は、純水処理後におけるパーティクルの付着状態、金属汚染状態、及びエッチングの均一性のいずれかに基づいて予め設定することを特徴とするものである。   Further, the invention described in claim 10 is the substrate processing apparatus according to any one of claims 6 to 9, wherein the pure water treatment time is a particle adhesion state, metal contamination state, and etching after the pure water treatment. It is characterized in that it is set in advance based on any one of the uniformity.

(作用・効果)純水洗浄後におけるパーティクルの付着状態、金属汚染状態、及びエッチングの均一性のいずれかを評価することにより、所要のデバイス性能が発揮できるための短縮された純水処理時間を決定することができる。   (Action / Effect) Evaluating any of the particle adhesion state, metal contamination state, and etching uniformity after pure water cleaning reduces the amount of time for pure water treatment to achieve the required device performance. Can be determined.

以上の説明から明らかなように、本発明によれば、薬液処理後に純水を含む処理液により基板に対する純水処理を行い、その時に処理液の基準比抵抗値に達するまで純水処理を行わなくても、デバイス性能を良好に維持することができれば短い純水処理時間であっても許容できる。したがって、最終の純水処理よりも前の純水処理では、短縮純水処理時間で純水洗浄を終えることにより、デバイス性能を良好に維持しつつも純水処理時間を短縮してスループットを高めることができ、純水の消費量も低減することができる。   As is clear from the above description, according to the present invention, the pure water treatment is performed on the substrate with the treatment liquid containing pure water after the chemical treatment, and at that time, the pure water treatment is performed until the reference specific resistance value of the treatment liquid is reached. Even if it is not necessary, a short pure water treatment time is acceptable as long as the device performance can be maintained satisfactorily. Therefore, in the pure water treatment prior to the final pure water treatment, the pure water cleaning is completed in a shortened pure water treatment time, so that the pure water treatment time is shortened and the throughput is increased while maintaining the device performance satisfactorily. And consumption of pure water can also be reduced.

以下、図面を参照してこの発明の一実施例を説明する。   An embodiment of the present invention will be described below with reference to the drawings.

<基板処理方法>
図1ないし図3はこの発明における短縮された純水処理時間を決めるためのデータ例である。図1は、測定弁を開放してからの経過時間に応じた比抵抗値を示すグラフであり、図2は、フッ化水素酸によるエッチング処理(薬液)後の純水処理時間に応じた面内均一性を示すグラフであり、図3は、各種純水処理時間ごとの評価を示す表である。
<Substrate processing method>
1 to 3 show examples of data for determining the shortened pure water treatment time in the present invention. FIG. 1 is a graph showing the specific resistance value according to the elapsed time after opening the measurement valve, and FIG. FIG. 3 is a table showing the evaluation for each pure water treatment time.

図1のグラフは、ある薬液で基板を一定時間処理した後、処理槽内の薬液を純水で置換し始めた時点から、種々の時間をおいて測定弁を開放したときの比抵抗値の変化を示すものである。比抵抗値は、処理槽に取り付けた比抵抗計によって計測している。このグラフ中、「純水のみ」(図中に実線で示す)と記載してあるのは、元々純水中に同様の基板を浸漬させておき、新たな純水で置換を開始し始め測定弁を解放した時点からの変化を示す。すぐに比抵抗値が高くならないのは、測定弁を開放してから比抵抗計に測定サンプルが到達するのに遅れ時間が存在することや、比抵抗計の特性などに起因する。   The graph of FIG. 1 shows the specific resistance value when the measurement valve is opened after various times from the time when the chemical solution in the treatment tank is replaced with pure water after the substrate is treated with a certain chemical solution for a certain period of time. It shows a change. The specific resistance value is measured by a specific resistance meter attached to the treatment tank. In this graph, “Pure water only” (indicated by the solid line in the figure) means that the same substrate was originally immersed in pure water, and the substitution started with new pure water. The change from when the valve is released is shown. The reason why the specific resistance value does not immediately increase is due to the existence of a delay time for the measurement sample to reach the specific resistance meter after the measurement valve is opened, the specific characteristics of the specific resistance meter, and the like.

一般的に、「標準純水処理時間」という場合には、この純水のみの比抵抗値にほぼ達するまで洗浄に要する時間をいう。具体的には、図中に「標準純水処理 10min」と示したものである。また、ここでは、このときの比抵抗値を「基準比抵抗値」と称することにする。なお、標準純水処理時間よりも洗浄時間が短い短縮純水処理時間の例としては、「短縮純水処理1」の2分と、「短縮純水処理2」の4分と、「短縮純水処理3」の6分とを挙げてある。したがって、純水による置換を開始してから測定を開始するまでの時間は、「短縮純水処理3」から「短縮純水処理1」にしたがって短くなっている。   In general, the term “standard pure water treatment time” refers to the time required for cleaning until the specific resistance value of pure water only is reached. Specifically, “standard pure water treatment 10 min” is shown in the figure. Here, the specific resistance value at this time is referred to as a “reference specific resistance value”. Examples of the shortened pure water treatment time shorter than the standard pure water treatment time are 2 minutes for “shortened pure water treatment 1”, 4 minutes for “shortened pure water treatment 2”, and “shortened pure water treatment”. 6 minutes of “water treatment 3”. Therefore, the time from the start of replacement with pure water to the start of measurement is shortened according to “shortened pure water treatment 3” to “shortened pure water treatment 1”.

このグラフにより、「純水のみ」や「標準純水処理時間」の曲線を下回る比抵抗値の変化を示す場合には、従来の判断基準からすると不十分な純水による洗浄であると見なされるものである。しかしながら、本発明では、デバイスの性能を維持可能であるか否かに応じてその判断を行おうとする点が特徴的となっている。その判断としては、以下に示すように、エッチング及び純水処理後の面内均一性(図2)、純水処理後におけるパーティクル付着及び金属除去(図3)などが挙げられる。   If the graph shows a change in specific resistance value below the curve of “pure water only” or “standard pure water treatment time”, it is considered that the cleaning is performed with insufficient pure water according to the conventional criteria. Is. However, the present invention is characterized in that the determination is made according to whether or not the performance of the device can be maintained. Examples of the determination include in-plane uniformity after etching and pure water treatment (FIG. 2), particle adhesion and metal removal after pure water treatment (FIG. 3), and the like.

『エッチング後の面内均一性』
図2は、200:1のフッ化水素酸により、基板面の膜を100Åの厚さだけエッチングした後、上述した各種の純水処理を行ってから面内におけるエッチングの均一性をプロットしたものである。なお、このグラフにおいて純水処理時間が「0」とは、基板をフッ化水素酸に浸漬してエッチングした後、フッ化水素酸を排出するだけで純水処理を全く行わなかったことを表す。「標準純水処理時間」である10分の場合は、従来の洗浄後に得られるエッチングの面内均一性を示す。これに対して、標準純水処理時間の10分よりも短い短縮純水処理1〜3であっても、従来同等のエッチング均一性が得られることが分かる。
"In-plane uniformity after etching"
FIG. 2 is a plot of the uniformity of etching within the surface after etching the film on the substrate surface to a thickness of 100 mm with 200: 1 hydrofluoric acid and then performing the various pure water treatments described above. It is. In this graph, the pure water treatment time of “0” means that after the substrate was immersed in hydrofluoric acid and etched, hydrofluoric acid was discharged and no pure water treatment was performed. . In the case of 10 minutes, which is the “standard pure water treatment time”, the in-plane uniformity of etching obtained after conventional cleaning is shown. On the other hand, it can be seen that even with shortened pure water treatments 1 to 3 shorter than 10 minutes of the standard pure water treatment time, the same etching uniformity can be obtained.

『パーティクル付着及び金属除去』
図3は、上述した各種純水処理時間ごとにパーティクル付着数及び除去率並びに金属除去について測定したものである。パーティクル付着数は、純水処理の前後にパーティクルカウンタで付着数を計数し、その差分を示している。また、パーティクル除去率は、差分に応じた割合を示している。金属除去は、付着している金属類を計測した結果を示す。
"Particle adhesion and metal removal"
FIG. 3 shows the measurement of the number of adhered particles, the removal rate, and the metal removal for each of the various pure water treatment times described above. The number of adhering particles indicates the difference between the adhering number counted by the particle counter before and after the pure water treatment. Further, the particle removal rate indicates a ratio corresponding to the difference. Metal removal shows the result of measuring the attached metals.

これによると、標準純水処理と短縮純水処理1〜3におけるパーティクル付着数及び除去率並びに金属除去は、ほぼ同じレベルであることが明白である。なお、金属除去における検出不可能レベルとは、測定装置によって金属類の検出が不可能なほど金属類による汚染がないことを示す。   According to this, it is clear that the number of adhered particles, the removal rate, and the metal removal in the standard pure water treatment and the shortened pure water treatments 1 to 3 are substantially the same level. In addition, the undetectable level in metal removal indicates that there is no contamination by metals so that metals cannot be detected by the measuring device.

本発明では、これらの結果をふまえて、薬液から純水へ置換して標準純水処理による純水の基準比抵抗値よりも比抵抗値が低い処理液(純水を含む)を使用し、標準純水処理時間よりも洗浄時間が短く、なおかつデバイス性能を良好に維持することができる短縮純水処理時間で基板Wの洗浄を行うようにする。但し、最終の洗浄については、念のため従来通りに基準比抵抗値が得られるまでの洗浄を行うことが好ましく、最終洗浄よりも前の純水処理洗浄について「短縮純水処理時間」で洗浄処理を行うことにする。   In the present invention, based on these results, a treatment liquid (including pure water) having a specific resistance value lower than a standard specific resistance value of pure water by standard pure water treatment by replacing the chemical liquid with pure water is used. The cleaning time is shorter than the standard pure water processing time, and the substrate W is cleaned in a shortened pure water processing time that can maintain good device performance. However, for the final cleaning, it is preferable to perform the cleaning until the reference specific resistance value is obtained as usual, just in case, and the cleaning with the “reduced pure water processing time” is performed for the pure water treatment cleaning before the final cleaning. We will do the processing.

なお、適切な「短縮純水処理時間」は、基板の種類や、被着されている膜種、基板に施されたプロセス、使用した薬液の種類や処理時間など、さらに処理槽の構造や純水の供給形態などによって異なるので、それらごとに予め実験を行って、デバイス性能を良好に維持することができるか否かに応じて短縮純水処理時間を決定するのが好ましい。   Appropriate “shortened pure water treatment time” includes the type of substrate, the type of film applied, the process applied to the substrate, the type of chemical used and the treatment time, and the structure and purity of the treatment tank. Since it differs depending on the water supply mode, it is preferable to conduct an experiment in advance for each of them and determine the shortened pure water treatment time depending on whether or not the device performance can be maintained satisfactorily.

<基板処理装置>
図4を参照して、上述した基板処理方法を用いた基板処理装置について説明する。なお、図4は、実施例に係る基板処理装置の概略構成を示すブロック図である。
<Substrate processing equipment>
A substrate processing apparatus using the above-described substrate processing method will be described with reference to FIG. FIG. 4 is a block diagram illustrating a schematic configuration of the substrate processing apparatus according to the embodiment.

この基板処理装置は、内槽1及び外槽3を備えた処理槽5を備えている。内槽1は、リンス液としての純水や薬液などの処理液を貯留し、浸漬された基板Wに対して処理を施す。外槽3は、内槽1から溢れた処理液を回収して排液する機能を備えている。本発明における保持機構に相当する保持アーム7は、内槽1内とその上方とにわたって昇降可能に構成されており、基板Wの端縁を保持して複数枚の基板Wを起立姿勢で保持する。外槽3には、外槽3内の比抵抗値を測定する比抵抗計8が取り付けられている。   The substrate processing apparatus includes a processing tank 5 including an inner tank 1 and an outer tank 3. The inner tank 1 stores a processing solution such as pure water or a chemical solution as a rinsing solution, and performs processing on the immersed substrate W. The outer tub 3 has a function of collecting and draining the processing liquid overflowing from the inner tub 1. The holding arm 7 corresponding to the holding mechanism in the present invention is configured to be movable up and down in the inner tank 1 and above, and holds an edge of the substrate W to hold a plurality of substrates W in an upright posture. . A specific resistance meter 8 for measuring the specific resistance value in the outer tub 3 is attached to the outer tub 3.

なお、比抵抗計8が本発明における測定部に相当する。   The specific resistance meter 8 corresponds to the measurement unit in the present invention.

内槽1の底部には、内槽1に対して処理液を供給するための注入管9が配備されている。この注入管9には、供給管11の一端側が連通接続されている。供給管11の他端側には、純水供給源13が連通されている。純水供給源13の下流側には、ミキシングバルブ17と、インラインヒータ19と、フィルタ21と、制御弁23とが取り付けられている。   An injection pipe 9 for supplying a processing liquid to the inner tank 1 is provided at the bottom of the inner tank 1. One end of a supply pipe 11 is connected to the injection pipe 9 in communication. A pure water supply source 13 is communicated with the other end side of the supply pipe 11. A mixing valve 17, an inline heater 19, a filter 21, and a control valve 23 are attached to the downstream side of the pure water supply source 13.

ミキシングバルブ17には、薬液供給源に連通した供給配管25が接続されている。その流量は、供給配管25に取り付けられた制御弁27によって調整される。さらに、前記薬液とは異なる薬液を供給するための薬液供給源に連通した供給配管29もミキシングバルブ17に接続されている。供給配管29の流量調節は、制御弁31によって行われる。   The mixing valve 17 is connected to a supply pipe 25 that communicates with a chemical supply source. The flow rate is adjusted by a control valve 27 attached to the supply pipe 25. Further, a supply pipe 29 communicating with a chemical solution supply source for supplying a chemical solution different from the chemical solution is also connected to the mixing valve 17. The flow rate of the supply pipe 29 is adjusted by the control valve 31.

上述した保持アーム7の昇降や、インラインヒータ19による温度調節、制御弁23,27,31による流量調節などは、制御部33によって統括的に制御されている。この制御部33には記憶部35が接続されており、ここには基板Wの処理手順などを規定したレシピなどが登録されている。制御部33は、レシピを参照しながら上記各部を制御するとともに、処理が最終の純水洗浄である場合には、その比抵抗値を参照しつつ処理の完了を判断する。一方、最終の純水洗浄よりも前に行う純水洗浄である場合には、レシピに規定されている「短縮純水処理時間」によって洗浄処理を完了して次の処理へ移行するように制御を行う。   The above-described lifting and lowering of the holding arm 7, temperature adjustment by the in-line heater 19, flow rate adjustment by the control valves 23, 27, and 31 are comprehensively controlled by the control unit 33. A storage unit 35 is connected to the control unit 33, and a recipe that defines the processing procedure of the substrate W and the like is registered therein. The control unit 33 controls each of the above units with reference to the recipe, and when the process is the final pure water cleaning, determines the completion of the process with reference to the specific resistance value. On the other hand, in the case of pure water cleaning performed before the final pure water cleaning, control is performed so that the cleaning process is completed and the process proceeds to the next process according to the “shortened pure water processing time” defined in the recipe. I do.

なお、上記制御部33が本発明における制御部に相当し、記憶部35が本発明における記憶手段に相当する。   The control unit 33 corresponds to the control unit in the present invention, and the storage unit 35 corresponds to the storage unit in the present invention.

次に、図5を参照して上記構成の基板処理装置による処理について説明する。なお、図5は、処理の流れを示すフローチャートである。   Next, processing performed by the substrate processing apparatus configured as described above will be described with reference to FIG. FIG. 5 is a flowchart showing the flow of processing.

ステップS1
制御部33は、記憶部35のレシピを参照し、制御弁23,27,31及び必要に応じてさらにインラインヒータ17を制御して、所定の薬液を内槽1に供給する。供給される薬液としては、例えば、エッチング用のフッ化水素酸である。次に。基板Wを支持している保持アーム7を内槽1内に下降させて、レシピに規定されている時間だけ保持する。この薬液処理により、例えば、基板Wに形成されている酸化膜が所定厚さだけエッチングされる。
Step S1
The control unit 33 refers to the recipe in the storage unit 35, controls the control valves 23, 27, 31 and further the in-line heater 17 as necessary, and supplies a predetermined chemical solution to the inner tank 1. An example of the chemical solution to be supplied is hydrofluoric acid for etching. next. The holding arm 7 supporting the substrate W is lowered into the inner tank 1 and is held for the time specified in the recipe. By this chemical treatment, for example, an oxide film formed on the substrate W is etched by a predetermined thickness.

ステップS2
レシピを参照して、基準比抵抗値の純水を内槽1へ供給して、純水を含む処理液により基板Wに対する純水処理を行うが、それが最終の純水処理洗浄であるか否かにより処理を分岐する。
Step S2
Referring to the recipe, pure water having a reference specific resistance value is supplied to the inner tank 1 and pure water treatment is performed on the substrate W with a treatment liquid containing pure water. Is this the final pure water treatment cleaning? Processing branches depending on whether or not.

ステップS3
上述のステップS2において、最終の純水処理でないと判断された場合には、所定時間の薬液処理が完了すると、制御部33は保持アーム7をその位置に維持したまま、制御弁27,31を閉止するとともに、制御弁23を調整して所定流量の純水を純水供給源13から内槽1へ供給する。これにより内槽1内の薬液が純水によって置換され、純水を含む処理液により基板Wに対する純水処理が行われる。その処理時間は、上述した短縮された純水処理時間であり、この短縮純水処理時間(短縮純水処理1〜3)は、予め記憶部35に記憶されており、制御部33の制御により基板Wに対する純水処理が行われる。
Step S3
If it is determined in step S2 that it is not the final pure water treatment, when the chemical solution treatment for a predetermined time is completed, the control unit 33 controls the control valves 27 and 31 while maintaining the holding arm 7 in that position. At the same time, the control valve 23 is adjusted to supply pure water at a predetermined flow rate from the pure water supply source 13 to the inner tank 1. As a result, the chemical solution in the inner tank 1 is replaced with pure water, and the pure water treatment is performed on the substrate W with the treatment liquid containing pure water. The treatment time is the above-described shortened pure water treatment time, and the shortened pure water treatment time (shortened pure water treatment 1 to 3) is stored in the storage unit 35 in advance, and is controlled by the control unit 33. A pure water treatment is performed on the substrate W.

この処理の後、ステップS1に戻って、例えば、他の薬液を用いた薬液処理を行う。   After this process, the process returns to step S1 and, for example, a chemical process using another chemical is performed.

ステップS4
上記のステップS2において最終の純水処理であると判断された場合には、上述した短縮純水処理時間での処理ではなく、標準の純水処理を行う。
Step S4
When it is determined in step S2 that it is the final pure water treatment, the standard pure water treatment is performed instead of the above-described shortened pure water treatment time.

ステップS5
最終の純水処理の場合には、比抵抗計8から出力される比抵抗値をモニタし、純水を含む処理の値がレシピに規定されている基準比抵抗値に達したか否かによって処理の完了を判断する。したがって、基準比抵抗値に達するまでステップS4を実行し、基準比抵抗値に達すれば最終の純水処理を終える。
Step S5
In the case of the final pure water treatment, the specific resistance value output from the specific resistance meter 8 is monitored, and depending on whether or not the treatment value including pure water has reached the reference specific resistance value defined in the recipe. Determine completion of processing. Therefore, step S4 is executed until the reference specific resistance value is reached, and if the reference specific resistance value is reached, the final pure water treatment is finished.

上述したように、最終の純水処理(例えば10分)よりも前の純水処理では、短縮純水処理時間で純水処理(例えば2分、4分、6分)を終えることにより、デバイス性能を良好に維持しつつも処理時間を短縮してスループットを高めることができる。さらに、短時間で純水処理を終えるので、純水の消費量も低減することができ、廃水処理の負荷を軽減することができる。   As described above, in the pure water treatment prior to the final pure water treatment (for example, 10 minutes), the pure water treatment (for example, 2 minutes, 4 minutes, and 6 minutes) is completed in a shortened pure water treatment time, whereby the device While maintaining good performance, it is possible to shorten the processing time and increase the throughput. Furthermore, since the pure water treatment is completed in a short time, the consumption of pure water can be reduced and the load of waste water treatment can be reduced.

なお、上記の基板処理装置は、一つの処理槽5によって薬液処理及び純水処理を行うタイプであったが、複数の処理槽を備えている場合であっても本発明を適用することができる。これについて図6を参照しながら説明する。なお、図6は、処理槽を複数個備えている基板処理装置における動作の説明に供する図である。   In addition, although said board | substrate processing apparatus was a type which performs a chemical | medical solution process and a pure water process by the one processing tank 5, even if it is a case where a several processing tank is provided, this invention can be applied. . This will be described with reference to FIG. FIG. 6 is a diagram for explaining the operation in the substrate processing apparatus including a plurality of processing tanks.

この基板処理装置は、第1の薬液処理用の処理槽51と、純水処理用の処理槽53と、第2の薬液処理用の処理槽55と、最終純水処理用の処理槽57とを備えている。この基板処理装置では、上記各処理槽51,53,55,57に順次に基板Wを搬送機構59により搬送して処理を行うように構成されている。なお、図6では、内槽のみを図示し、外槽については省略してある。   The substrate processing apparatus includes a first chemical treatment tank 51, a pure water treatment tank 53, a second chemical treatment tank 55, and a final pure water treatment tank 57. It has. In this substrate processing apparatus, the substrate W is sequentially transferred to the processing tanks 51, 53, 55, 57 by the transfer mechanism 59 for processing. In FIG. 6, only the inner tank is shown, and the outer tank is omitted.

このような構成の装置では、レシピに応じて各処理槽51,53,55,57に順次に基板Wを搬送してゆくが、純水処理のうち、最終の純水処理よりも前の純水処理では「短縮純水処理時間」によって洗浄処理を行い、最終の純水処理では比抵抗計8をモニタしつつ基準比抵抗値となるまで洗浄を行うか、標準時間で洗浄処理を行う。   In the apparatus having such a configuration, the substrate W is sequentially transferred to each of the processing tanks 51, 53, 55, and 57 in accordance with the recipe. Of the pure water treatment, the pure water before the final pure water treatment is used. In the water treatment, the cleaning process is performed according to the “shortened pure water processing time”, and in the final pure water process, the cleaning is performed until the reference specific resistance value is reached while monitoring the specific resistance meter 8 or the cleaning process is performed in the standard time.

上記のようにして最終純水処理を終えた基板Wは、搬送機構59により処理槽51から搬出されて乾燥処理等が施された後に保管されたり、次の一連の処理を施されたりする。   The substrate W that has been subjected to the final pure water treatment as described above is unloaded from the treatment tank 51 by the transport mechanism 59 and subjected to a drying treatment or the like, and then stored or subjected to the following series of treatments.

このように複数の処理槽を備えている構成であっても、最終の純水処理よりも前の純水処理を「短縮純水処理時間」で行うことにより、デバイス性能を良好に維持しつつも処理時間を短縮してスループットを高められる。さらに、短時間で純水処理を終えるので、純水の消費量も低減することができる。   Even in a configuration including a plurality of treatment tanks as described above, by performing the pure water treatment before the final pure water treatment in the “shortened pure water treatment time”, it is possible to maintain good device performance. The processing time can be shortened and the throughput can be increased. Furthermore, since the pure water treatment is completed in a short time, the consumption of pure water can also be reduced.

なお、本発明は上記実施例に限定されるものではなく、以下のように変形実施が可能である。   In addition, this invention is not limited to the said Example, A deformation | transformation implementation is possible as follows.

例えば、純水処理用の処理槽と、薬液処理用の処理槽とを二つ備え、これらの処理槽の間で基板を交互に搬送して少なくとも二回の純水洗浄と薬液処理とを行う装置であっても、本発明を適用することができる。   For example, two treatment tanks for pure water treatment and two treatment tanks for chemical solution treatment are provided, and the substrate is alternately conveyed between these treatment tanks to perform at least twice pure water cleaning and chemical solution treatment. The present invention can be applied even to an apparatus.

測定弁を開放してからの経過時間に応じた比抵抗値を示すグラフである。It is a graph which shows the specific resistance value according to the elapsed time after opening a measurement valve. フッ化水素酸によるエッチング処理後の純水処理時間に応じた面内均一性を示すグラフである。It is a graph which shows the in-plane uniformity according to the pure water processing time after the etching process by hydrofluoric acid. 各種純水処理時間ごとの評価を示す表である。It is a table | surface which shows the evaluation for every pure water processing time. 実施例に係る基板処理装置の概略構成を示すブロック図である。It is a block diagram which shows schematic structure of the substrate processing apparatus which concerns on an Example. 処理の流れを示すフローチャートである。It is a flowchart which shows the flow of a process. 処理槽を複数個備えている基板処理装置における動作の説明に供する図である。It is a figure where it uses for description of operation | movement in the substrate processing apparatus provided with two or more processing tanks.

符号の説明Explanation of symbols

W … 基板
1 … 内槽
3 … 外槽
5 … 処理槽
7 … 保持アーム
8 … 比抵抗計
11 …供給管
33 … 制御部
35 … 記憶部
W ... Substrate 1 ... Inner tank 3 ... Outer tank 5 ... Processing tank 7 ... Holding arm 8 ... Resistivity meter 11 ... Supply pipe 33 ... Control unit 35 ... Storage unit

Claims (10)

基板に対して薬液処理を行った後、純水を含む処理液により純水処理を行う基板処理方法において、
薬液処理を行った後に純水を供給し、純水処理では純水の基準比抵抗値より低い処理液を使用し、前記基準比抵抗値が得られるよりも短い純水処理時間で純水処理を終了することを特徴とする基板処理方法。
In the substrate processing method of performing pure water treatment with a treatment liquid containing pure water after performing chemical treatment on the substrate,
Pure water is supplied after the chemical treatment, and the pure water treatment uses a treatment solution lower than the reference specific resistance value of pure water, and the pure water treatment takes less time than the reference specific resistance value is obtained. And ending the process.
請求項1に記載の基板処理方法において、
前記純水処理は、少なくとも二回以上の純水処理を含んでおり、
前記純水処理のうち最終の純水処理よりも前に行う純水処理において、純水の基準比抵抗値より低い処理液を使用し、前記基準比抵抗値が得られるよりも短い純水処理時間で純水処理を終了することを特徴とする基板処理方法。
The substrate processing method according to claim 1,
The pure water treatment includes at least two times of pure water treatment,
In the pure water treatment performed before the final pure water treatment among the pure water treatments, a pure water treatment using a treatment liquid lower than a reference specific resistance value of pure water and having a reference specific resistance value shorter than that is obtained. A substrate processing method characterized in that the pure water treatment is completed in time.
基板に対して薬液処理を行った後、純水を含む処理液により純水処理を行う基板処理方法において、
処理槽内に貯留された薬液により基板に対する薬液処理を行い、
前記処理槽へ純水を供給して、前記処理槽内を薬液から純水へ置換させつつ処理液により純水処理を行うとともに、薬液から純水への置換により処理液の比抵抗値が純水の基準比抵抗値になるよりも短い純水処理時間で純水処理を終了することを特徴とする基板処理方法。
In the substrate processing method of performing pure water treatment with a treatment liquid containing pure water after performing chemical treatment on the substrate,
Perform chemical treatment on the substrate with the chemical stored in the treatment tank,
Pure water is supplied to the treatment tank, and pure water treatment is performed with the treatment liquid while replacing the inside of the treatment tank from the chemical liquid to the pure water, and the specific resistance value of the treatment liquid is reduced by the substitution from the chemical liquid to the pure water. A substrate processing method characterized in that the pure water treatment is completed in a pure water treatment time shorter than the reference specific resistance value of water.
請求項3に記載の基板処理方法において、
前記純水処理は、少なくとも二回以上の純水処理を含んでおり、
前記純水処理のうち最終の純水処理よりも前に行う純水処理において、前記処理槽内を薬液から純水へ置換させつつ処理液により純水処理を行うとともに、薬液から純水への置換により処理液の比抵抗値が純水の基準比抵抗値になるよりも短い純水処理時間で純水処理を終了することを特徴とする基板処理方法。
The substrate processing method according to claim 3,
The pure water treatment includes at least two times of pure water treatment,
In the pure water treatment performed before the final pure water treatment in the pure water treatment, the pure water treatment is performed with the treatment liquid while replacing the inside of the treatment tank from the chemical liquid to the pure water, and from the chemical liquid to the pure water. A substrate processing method, wherein the pure water treatment is completed in a shorter pure water treatment time than the specific resistance value of the treatment liquid becomes a reference specific resistance value of pure water by the replacement.
請求項1から4のいずれかに記載の基板処理方法において、
前記純水処理時間は、純水処理後におけるパーティクルの付着状態、金属汚染状態、及びエッチングの均一性のいずれかに基づいて予め設定することを特徴とする基板処理方法。
In the substrate processing method in any one of Claim 1 to 4,
2. The substrate processing method according to claim 1, wherein the pure water treatment time is set in advance based on any of a particle adhesion state, a metal contamination state, and etching uniformity after the pure water treatment.
基板に対して薬液処理を行った後、純水を含む処理液により純水処理を行う基板処理装置において、
薬液及び処理液を貯留する処理槽と、
前記処理槽内において基板を保持する保持機構と、
前記保持機構に保持された基板を前記処理槽内の薬液に浸漬させた状態で、前記処理槽内を薬液から純水へ置換させるように、純水を供給する純水供給部と、
薬液から純水への置換により処理液の比抵抗値が純水の基準比抵抗値になるよりも短い純水処理時間を記憶する記憶部と、
前記記憶部に記憶された純水処理時間により純水処理を行わせる制御部と、
を備えていることを特徴とする基板処理装置。
In a substrate processing apparatus for performing pure water treatment with a treatment liquid containing pure water after performing chemical treatment on the substrate,
A treatment tank for storing a chemical solution and a treatment solution;
A holding mechanism for holding the substrate in the processing tank;
In a state where the substrate held in the holding mechanism is immersed in the chemical solution in the processing tank, a pure water supply unit that supplies pure water so as to replace the inside of the processing tank with chemical water from the chemical liquid;
A storage unit for storing a pure water treatment time shorter than the specific resistance value of the treatment liquid becomes a reference specific resistance value of pure water by replacing the chemical liquid with pure water;
A control unit that performs pure water treatment by the pure water treatment time stored in the storage unit;
A substrate processing apparatus comprising:
請求項6に記載の基板処理装置において、
前記処理槽内に貯留された処理液の比抵抗値を測定する測定部をさらに備えていることを特徴とする基板処理装置。
The substrate processing apparatus according to claim 6,
A substrate processing apparatus, further comprising a measuring unit that measures a specific resistance value of the processing liquid stored in the processing tank.
基板に対して薬液処理を行った後、純水を含む処理液により純水処理を行う基板処理装置において、
基板に対して処理液により純水処理を行う第1処理槽と、
前記第1処理槽で純水処理を行った基板に対して薬液により薬液処理を行う第2処理槽と、
前記第2処理槽で薬液処理を行った基板に対して処理液により純水処理を行う第3処理槽と、
前記第1処理槽から前記第2処理槽へ基板を搬送するとともに、前記第2処理槽から前記第3処理槽へ基板を搬送する搬送機構と、
前記第1処理槽における薬液から純水への置換により処理液の比抵抗値が純水の基準比抵抗値になるよりも短い純水処理時間を記憶する記憶部と、
前記第1処理槽内において前記記憶部に記憶された純水処理時間により純水処理を行わせる制御部と、
を備えていることを特徴とする基板処理装置。
In a substrate processing apparatus for performing pure water treatment with a treatment liquid containing pure water after performing chemical treatment on the substrate,
A first treatment tank that performs pure water treatment on a substrate with a treatment liquid;
A second treatment tank that performs chemical treatment with a chemical solution on a substrate that has been subjected to pure water treatment in the first treatment tank;
A third treatment tank that performs pure water treatment with a treatment liquid on a substrate that has been subjected to chemical treatment in the second treatment tank;
A transport mechanism for transporting the substrate from the first processing tank to the second processing tank and transporting the substrate from the second processing tank to the third processing tank;
A storage unit for storing a pure water treatment time shorter than the specific resistance value of the treatment liquid becomes a reference specific resistance value of pure water by replacing the chemical liquid with pure water in the first treatment tank;
A control unit for performing pure water treatment in the first treatment tank by the pure water treatment time stored in the storage unit;
A substrate processing apparatus comprising:
請求項8に記載の基板処理装置において、
前記制御部は、前記第3処理槽において処理液の比抵抗値が純水の基準比抵抗値に達したことに基づいて、前記搬送機構により前記第3処理槽から基板を搬出させることを特徴とする基板処理装置。
The substrate processing apparatus according to claim 8,
The controller causes the substrate to be unloaded from the third processing tank by the transport mechanism based on the fact that the specific resistance value of the processing liquid has reached the reference specific resistance value of pure water in the third processing tank. A substrate processing apparatus.
請求項6から9のいずれかに記載の基板処理装置において、
前記純水処理時間は、純水処理後におけるパーティクルの付着状態、金属汚染状態、及びエッチングの均一性のいずれかに基づいて予め設定することを特徴とする基板処理装置。

The substrate processing apparatus according to any one of claims 6 to 9,
The substrate processing apparatus is characterized in that the pure water treatment time is set in advance based on any of a particle adhesion state, a metal contamination state, and etching uniformity after the pure water treatment.

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