JP2005147976A - Temperature-measuring apparatus, chuck monitor, and plasma processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a temperature-measuring apparatus having a simple structure, capable of performing temperature measurement with high precision, without being influenced by electromagnetic waves which becomes disturbances. <P>SOLUTION: This temperature measuring apparatus is provided with an infrared-type temperature measurement unit 6 for measuring the temperature of a board 10 in a predetermined processing tank. Between the board 10 and the measurement unit 6, a shielding section 8, made of a material which shuts infrared radiation off and constituted so as to be capable of touching the board 10 is provided, and the device is formed so as to measure the temperature of the shielding section 8 by the measurement unit 6. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a technique for measuring the temperature of a substrate or the like in a processing apparatus that processes the substrate or the like in a vacuum chamber, for example, and a technique for monitoring the adsorption state of the substrate.

  2. Description of the Related Art Conventionally, for example, in an apparatus that heats a substrate in a vacuum chamber or performs plasma processing, the temperature of the substrate is measured using an infrared temperature measuring mechanism.

  However, for example, when the substrate is exposed to electromagnetic waves such as infrared rays generated by a lamp heater, plasma, corona discharge, etc., when processing a substrate made of a material that transmits electromagnetic waves, the substrate is transmitted. There is a problem that accurate temperature measurement is difficult due to the influence of electromagnetic waves.

As a means for solving such a problem, a substrate temperature measuring means for detecting only the radiant energy from the substrate has been proposed. However, such a conventional technique has a complicated configuration and a measurement error. There is a problem of being big.
JP 2002-164229 A

  By the way, conventionally, a technique for measuring the temperature of a substrate and monitoring the suction state of the substrate when processing with the substrate chucked by an electrostatic chuck is known. Since it is difficult to accurately measure the temperature of the substrate, there is a problem that it is difficult to accurately monitor the adsorption state of the substrate.

  The present invention has been made in order to solve such problems of the prior art, and the object of the present invention is to provide a simple method capable of accurately measuring temperature without being affected by disturbance electromagnetic waves. An object of the present invention is to provide a temperature measuring device having a simple structure.

  Another object of the present invention is to provide a chuck monitor capable of accurately monitoring the adsorption state of a substrate during various processes.

In order to achieve the above object, the invention according to claim 1 is a temperature measuring device including a temperature measuring unit that measures the temperature of a processing object in a predetermined processing tank, wherein the processing object and the processing object A shielding unit made of a material that blocks predetermined electromagnetic waves is provided between the temperature measuring unit and configured to be able to contact the object to be processed, and the temperature of the shielding unit is measured by the temperature measuring unit. Temperature measuring device.
According to a second aspect of the present invention, in the first aspect of the invention, the temperature measuring unit is configured to detect the infrared rays emitted from the shielding unit and perform temperature measurement.
Invention of Claim 3 has the light emitting element which consists of a fluorescent substance arrange | positioned so that the said temperature measurement part may contact the said shielding part in invention of any one of Claim 1 or 2, It is configured to detect light emitted from the light emitting element.
According to a fourth aspect of the present invention, in the invention according to any one of the first to third aspects, the temperature measuring unit includes a thermocouple disposed so as to contact the shielding unit, and the thermocouple It is comprised so that the temperature of the said shielding part may be measured.
The invention according to claim 5 includes an electrostatic chuck for electrostatically attracting a processing object in a predetermined processing tank, and the temperature measuring device according to any one of claims 1 to 4, wherein the temperature measuring device includes: The chuck monitor is configured to monitor the adsorption state of the processing object based on the result obtained.
A sixth aspect of the present invention is a plasma processing apparatus including the processing tank having a predetermined plasma generation source and the temperature measuring device according to any one of the first to fourth aspects.
A seventh aspect of the invention is the invention of the sixth aspect, wherein the chuck monitor according to the fifth aspect is provided.

In the case of the temperature measuring device of the present invention, the temperature of the shielding unit is measured in a state where the shielding unit that blocks a predetermined electromagnetic wave (for example, infrared rays) is in contact with the object to be processed. Thus, it is possible to indirectly detect the temperature of the processing object without being affected by the electromagnetic wave transmitted through the processing object.
As a result, according to the present invention, it is possible to accurately measure the temperature of a glass substrate or the like, which could not be measured conventionally, during the process.

  Further, according to the present invention, since a conventionally known temperature measuring means is provided with an electromagnetic wave shielding part, a simple configuration can be achieved.

  On the other hand, when the temperature measuring unit has a light emitting element made of a phosphor arranged so as to be in contact with the shielding part and configured to detect light emitted from the light emitting element, the phosphor Since the light emitting element has a wide temperature range, accurate temperature measurement can be performed in a low temperature range of 150 ° C. or lower, for example.

  In addition, when the temperature measurement unit has a thermocouple arranged so as to contact the shielding unit and is configured to measure the temperature of the shielding unit by the thermocouple, the measurement temperature range by the thermocouple is Since it is wide, it becomes possible to perform accurate temperature measurement in a low temperature range of 150 ° C. or lower, for example.

  In addition, according to the chuck monitor of the present invention, the temperature of the processing object can be accurately measured without being affected by the electromagnetic wave transmitted through the processing object, so that the adsorption state of the substrate can be accurately determined during various processes. Can be monitored.

  As described above, according to the present invention, it is possible to provide a plasma processing apparatus capable of accurately grasping the temperature and adsorption state of a processing object being processed.

According to the present invention, it is possible to accurately measure temperature without being affected by disturbance electromagnetic waves during various processes.
Further, according to the present invention, the adsorption state of the substrate can be accurately monitored during various processes.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1A is a sectional view showing a first embodiment of the present invention, and FIG. 1B is an enlarged view showing a one-dot chain line A portion of FIG.

  As shown in FIGS. 1A and 1B, a sputtering apparatus (plasma processing apparatus) 1 of the present embodiment has a vacuum processing tank 2 connected to a vacuum exhaust system (not shown). The stage 3 for supporting the board | substrate (process target object) 10 is provided in the lower part.

  The stage 3 is connected to an AC power source (not shown) provided outside the vacuum processing tank 2 so that a predetermined AC voltage is applied to the substrate 10 during sputtering.

  A hot plate 4 for heating the substrate is provided above the stage 3. The hot plate 4 is provided with an electrostatic chuck 4a on the top thereof.

On the other hand, a sputtering target 5 is disposed in the upper part of the vacuum processing tank 2.
The target 5 is connected to a DC power source (not shown) provided outside the vacuum processing tank 2 so that a predetermined negative DC voltage is applied during sputtering.

  Further, in the present embodiment, an infrared type temperature measurement unit (temperature measurement unit) 6 corresponding to the temperature measurement device and the chuck monitor of the present invention is provided. The infrared type temperature measurement unit 6 has a function of measuring a temperature by detecting a predetermined infrared ray, and includes a control unit 6a connected to a computer (not shown).

  A quartz rod 7 is connected to the control unit 6a, and the tip of the quartz rod 7 is introduced into the vacuum processing tank 2 through the stage 3 described above and disposed near the lower portion of the substrate 10. It has become.

  As shown in FIG. 1B, in the present embodiment, a tip-shaped shielding portion 8 for blocking predetermined electromagnetic waves (infrared rays) is provided at the tip of the quartz rod 7.

  The shielding part 8 is formed in a shape and size so as to cover the tip part of the quartz rod 7. In the case of the present embodiment, the quartz rod 7 and the shielding portion 8 are connected by the spring 9, and the shielding portion 8 is pressed and adhered to the substrate 10 placed on the electrostatic chuck 4 a by the elastic force of the spring 9. It is supposed to let you.

  In the case of the present invention, the material of the shielding part 8 is not particularly limited. For example, from the viewpoint of avoiding the temperature rise of the shielding part 8 when heated by a lamp heater, for example, aluminum (Al), copper It is preferable to use a material that has a high thermal conductivity and reflects electromagnetic waves, such as (Cu), silver (Ag), gold (Au), and stainless steel (SUS).

  Of these materials, copper (Cu), silver (Ag), and gold (Au) are preferably used from the viewpoint of high thermal conductivity.

  Further, from the viewpoint of avoiding contamination of the contact portion between the substrate 10 and the shielding portion 8, it is preferable to use aluminum (Al).

Further, similarly, from the viewpoint of avoiding contamination at the contact portion between the substrate 10 and the shielding portion 8, a material that absorbs electromagnetic waves such as ceramics such as aluminum nitride (AlN) and aluminum oxide (Al ₂ O ₃ ) is used. It is also possible to make the shielding part 8 using the same material as the material of the substrate 10 and to coat the surface of the shielding part 8 on the quartz rod 7 side with, for example, copper.

  On the other hand, the material of the spring 9 is not particularly limited, but from the viewpoint of heat resistance and corrosion resistance, it is preferable to use materials such as stainless steel (SUS) and Inconel.

  The spring 9 is made of a material (spring constant) so that when the substrate 10 is placed on the hot plate 4, the upper surface of the shielding portion 8 is lowered to the position of the surface of the electrostatic chuck 4 a by its own weight. It is preferable to set the length.

  The spring 9 is configured to be detachable from the quartz rod 7 so that it can be used as required by the user.

  In the present embodiment having such a configuration, as shown in FIG. 1A, a process such as sputtering is performed in a state where the substrate 10 placed on the hot plate 4 is adsorbed by the electrostatic chuck 4a. .

  In this state, the shielding portion 8 is pressed and adhered to the substrate 10 by the elastic force of the spring 9, so that the temperature of the shielding portion 8 is substantially equal to the temperature of the substrate 10, and the same infrared ray as the substrate 10 is emitted from the shielding portion 8. Is released.

  Therefore, the temperature of the substrate 10 is indirectly measured by introducing the infrared rays emitted from the shielding portion 8 to the infrared temperature measuring unit 6 through the quartz rod 7, and the substrate 10 is analyzed by performing a predetermined analysis. Monitor the chuck status.

In the case of the present invention, the substrate 10 can be sucked and processed under various conditions as follows.
For example, the temperature when the temperature of the substrate 10 is sufficiently stabilized after the substrate 10 is attracted by the electrostatic chuck 4a is compared with the temperature of the substrate 10 when the same time elapses when a chuck failure occurs. Determine the temperature at which it is determined to be defective.

  It is also possible to store the temperature change of the substrate 10 being processed as a log and change the attracting force of the electrostatic chuck 4a based on the result.

  Further, the temperature before the substrate 10 is attracted by the electrostatic chuck 4a is measured to set a temperature range, and a warning may be issued when a temperature range other than the set range is detected.

  Furthermore, it is possible to determine whether or not the substrate 10 attracted to the electrostatic chuck 4a has reached a predetermined temperature by the above temperature measurement, and when the predetermined temperature is reached, a process such as sputtering can be started.

  Furthermore, a warning can be issued when the above-described measured temperature exceeds the heat-resistant temperature of the electrostatic chuck 4a, and the operation of the electrostatic chuck 4a or subsequent processing can be stopped.

  According to the present embodiment described above, the temperature measurement is performed in a state where the infrared ray is blocked by the shielding unit 8, so that it is not affected by the infrared ray emitted from, for example, plasma or a lamp heater and transmitted through the substrate 10. The temperature of the substrate 10 can be accurately measured, and thus the temperature of a glass substrate or the like that cannot be measured conventionally can be measured during the process.

  Furthermore, according to the present embodiment, it is possible to accurately monitor the adsorption state of the electrostatic chuck 4a in real time using the temperature measurement result of the substrate 10.

  In particular, in the present embodiment, since the shielding portion 8 is pressed against the substrate 10 by the elastic force of the spring 9, the shielding portion 8 is attached to the substrate 10 even when the substrate 10 is warped or inclined. It is possible to perform accurate temperature measurement by closely contacting.

  Further, in the present embodiment, the pressing force of the spring 9 is set so that the weight of the substrate 10 causes the upper surface of the shielding portion 8 to descend to the position of the surface of the electrostatic chuck 4a. The pressing force of 9 does not disturb.

  Furthermore, according to the present embodiment, since the shielding portion 8 is thermally separated by the spring 9, the amount of heat taken away from the substrate 10 is small, and the substrate 10 can be heated uniformly.

  FIG. 2A is a cross-sectional view showing a second embodiment of the present invention, and FIG. 2B is an enlarged view showing an alternate long and short dash line B part of FIG. 2A. The same reference numerals are given to the parts corresponding to the forms, and detailed description thereof is omitted.

  2A and 2B, in the sputtering apparatus 1A of the present embodiment, the shielding portion 8 is directly fixed to the quartz rod 7, and the quartz rod 7 is sandwiched by a pair of rollers 11 between the quartz rod 7. By raising, the shielding portion 8 is pressed against the substrate 10.

  According to the present embodiment having such a configuration, in addition to the above-described effects, there is an advantage that it can be used for a long time because there is no deterioration of the spring. Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.

  FIG. 3A is a cross-sectional view showing a third embodiment of the present invention, and FIG. 3B is an enlarged view showing an alternate long and short dash line C portion of FIG. 3A. The same reference numerals are given to the parts corresponding to the forms, and detailed description thereof is omitted.

  As shown in FIG. 3A, the sputtering apparatus 1 </ b> B of the present embodiment measures the temperature of the substrate 10 using a phosphor type temperature measurement unit 16.

  The phosphor-type temperature measurement unit 16 has a function of measuring light by detecting light emitted from a predetermined phosphor, and includes a control unit 16a that can be connected to a computer (not shown).

  A light transmission means 17 is connected to the control unit 16a, and the tip of the light transmission means 17 is introduced into the vacuum processing tank 2 through the stage 3 so as to be disposed near the lower portion of the substrate 10. It has become.

  As shown in FIG. 3B, the light transmission means 17 is configured by inserting a light transmission member 17b such as an optical fiber into a cylindrical member 17a made of an insulating material such as polyimide.

  A hollow shielding portion 18 made of the same material as that of the shielding portion 8 of the above embodiment is provided at the distal end portion of the light transmission means 17 so as to move up and down along the cylindrical member 17a.

  In the shielding part 18, a phosphor light emitting element 20 made of a predetermined phosphor is disposed in contact with the shielding part 18. And it is comprised so that the light emitted from this light emitting element 20 may be guide | induced to the said light transmission member 17b via light transmission members 17c, such as an optical fiber.

  Further, the shield 18 is connected to the cylindrical member 17a of the light transmission means 17 by a spring 19 in the same manner as in the above-described embodiment in order to press and adhere to the substrate 10 placed on the electrostatic chuck 4a. .

  Also in the case of the present embodiment, when the substrate 10 is placed on the hot plate 4, the material of the spring 19 (so that the upper surface of the shielding portion 18 is lowered to the position of the surface of the electrostatic chuck 4 a by its own weight. It is preferable to set the spring constant) and the length.

  In the present embodiment having such a configuration, as shown in FIG. 3A, sputtering is performed in a state where the substrate 10 placed on the hot plate 4 is adsorbed by the electrostatic chuck 4a.

  In this state, the shielding portion 18 is pressed and brought into close contact with the substrate 10 by the elastic force of the spring 19, and the temperature of the shielding portion 18 is substantially equal to the temperature of the substrate 10. Therefore, the phosphor light emitting element 20 in the shielding portion 18. Predetermined light is emitted from.

  Therefore, the temperature of the substrate 10 is indirectly measured by guiding the light emitted from the phosphor light emitting element 20 to the infrared temperature measuring unit 6 through the light transmission means 17, and the data is analyzed by a computer. Thus, the chuck state of the substrate 10 is monitored.

  According to the present embodiment having such a configuration, in addition to the effects described above, the temperature range at which the phosphor light emitting element 20 emits light is wide, so that accurate temperature measurement can be performed in a low temperature range of, for example, 150 ° C. or less. There is a merit that you can. Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.

  FIG. 4A is a cross-sectional view showing a fourth embodiment of the present invention, and FIG. 4B is an enlarged view showing an alternate long and short dash line D portion of FIG. 4A. The same reference numerals are given to the parts corresponding to the forms, and detailed description thereof is omitted.

  As shown in FIG. 4A, the sputtering apparatus 1 </ b> C of the present embodiment measures the temperature of the substrate 10 using a thermocouple type temperature measurement unit 26.

  The thermocouple type temperature measurement unit 26 measures temperature using a known thermocouple, and includes a control unit 26a connected to a computer (not shown).

  A lead portion 27 is connected to the control portion 26 a, and the leading end portion of the lead portion 27 is introduced into the vacuum processing tank 2 through the stage 3 and arranged near the lower portion of the substrate 10. Yes.

  As shown in FIG. 4B, the lead portion 27 includes a pair of thermocouple wires 30a and 30b (for example, K-type thermoelectrics) in which an insulating coating is provided in a cylindrical member 27a made of an insulating material such as polyimide. In the case of a pair, chromel and alumel wiring) are inserted.

  A hollow shielding part 28 similar to the shielding part 18 of the above embodiment is provided at the tip of the lead part 27 so as to move up and down along the lead part 27.

  In the shielding part 28, the probe tip part 30c of the thermocouple 30 connected to the thermocouple wires 30a and 30b is arranged in contact with the shielding part 28.

  Further, the shielding portion 28 is connected to the cylindrical member 27a of the lead portion 27 by a spring 29, as in the above-described embodiment, in order to press and adhere to the substrate 10 placed on the electrostatic chuck 4a.

  Also in the case of the present embodiment, when the substrate 10 is placed on the hot plate 4, the material of the spring 29 (so that the upper surface of the shielding portion 28 is lowered to the position of the surface of the electrostatic chuck 4 a by its own weight. It is preferable to set the spring constant) and the length.

  In the present embodiment having such a configuration, as shown in FIG. 4A, sputtering is performed while the substrate 10 placed on the hot plate 4 is adsorbed by the electrostatic chuck 4a.

  In this state, the shielding portion 28 is pressed and brought into close contact with the substrate 10 by the elastic force of the spring 29, and the temperature of the probe tip 30a in the shielding portion 28 is substantially equal to the temperature of the substrate 10, so that the thermocouple temperature The chucking state of the substrate 10 is monitored by indirectly measuring the temperature of the substrate 10 by the measurement unit 26 and analyzing the data by a computer.

  In the present embodiment having such a configuration, in addition to the above-described effects, since the operating temperature range of the thermocouple 30 is wide, there is an advantage that accurate temperature measurement can be performed in a low temperature range of, for example, 150 ° C. or less. is there. Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.

  FIG. 5 shows an essential part of a modified example of the fourth embodiment of the present invention, and is an enlarged view showing an alternate long and short dash line D part of FIG. Hereinafter, the same reference numerals are given to portions corresponding to the above-described embodiment, and detailed description thereof is omitted.

In this example, the probe tip 30c of the thermocouple 30 is provided in the covering 31 made of an insulating material such as aluminum nitride (AlN), aluminum oxide (Al ₂ O ₃ ), for example. It is different from the form.

  In this example having such a configuration, in addition to the above-described effects, there is an advantage that heat resistance and electrical insulation can be improved, and the problem of heavy metal contamination can be minimized. Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.

The present invention is not limited to the above-described embodiment, and various changes can be made.
For example, in the above-described embodiment, the temperature of the processing object is measured by one temperature measurement unit. However, the present invention is not limited to this, and a plurality of temperature measurement units are provided to provide the temperature of the processing object. Can also be measured. According to such a structure, the temperature of the several part of a process target object can be measured correctly.
In this case, it is also possible to perform temperature measurement by combining the above embodiments.

  The temperature measuring device of the present invention can be used in any of vacuum, air, reduced pressure or high pressure atmosphere.

Furthermore, the temperature measuring apparatus of the present invention can be applied not only to a sputtering apparatus but also to various apparatuses such as a heating apparatus, and can also be applied to an apparatus that does not use an electrostatic chuck.
However, the present invention is most effective in temperature measurement of a plasma processing apparatus or the like that generates electromagnetic waves such as infrared rays.

(A): Sectional view showing the first embodiment of the present invention (b): Enlarged view showing the one-dot chain line A part of FIG. 1 (a) (A): Cross-sectional view showing a second embodiment of the present invention (b): Enlarged view showing a dashed-dotted line B part in FIG. 2 (a) (A): Sectional view showing a third embodiment of the present invention (b): Enlarged view showing a dashed-dotted line C part in FIG. 3 (a) (A): Sectional view showing the fourth embodiment of the present invention (b): Enlarged view showing the dot-dash line D portion of FIG. 4 (a) The principal part of the modification of the 4th Embodiment of this invention is shown, The enlarged view which shows the dashed-dotted line D part of Fig.4 (a)

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Sputtering apparatus (plasma processing apparatus) 2 ... Vacuum processing tank 4 ... Hot plate 4a ... Electrostatic chuck 5 ... Target 6 ... Infrared type temperature measuring unit (temperature measuring part) 6a ... Control part 7 ... Quartz rod 8 ... Shielding part 9 ... Spring 10 ... Substrate (object to be processed)

Claims (7)

A temperature measuring device including a temperature measuring unit for measuring the temperature of a processing object in a predetermined processing tank,
A shielding unit made of a material that blocks a predetermined electromagnetic wave is provided between the processing object and the temperature measurement unit so as to be able to contact the processing object, and the temperature of the shielding unit is set to the temperature measurement unit. A temperature measuring device configured to measure by.   The temperature measurement device according to claim 1, wherein the temperature measurement unit is configured to perform temperature measurement by detecting infrared rays emitted from the shielding unit.   The temperature measuring unit includes a light emitting element made of a phosphor disposed so as to be in contact with the shielding unit, and is configured to detect light emitted from the light emitting element. The temperature measuring device according to any one of claims.   The temperature measuring unit includes a thermocouple disposed so as to be in contact with the shielding unit, and is configured to measure the temperature of the shielding unit by the thermocouple. The temperature measuring device according to item. An electrostatic chuck for electrostatically attracting a processing object in a predetermined processing tank;
A temperature measuring device according to any one of claims 1 to 4, comprising:
A chuck monitor configured to monitor an adsorption state of the processing object based on a result obtained by the temperature measuring device. A treatment tank having a predetermined plasma generation source;
The plasma processing apparatus provided with the temperature measuring apparatus of any one of Claims 1 thru | or 4.   The plasma processing apparatus according to claim 6, comprising the chuck monitor according to claim 5.

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