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JP2005142323A - Semiconductor module - Google Patents

Semiconductor module Download PDF

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Publication number
JP2005142323A
JP2005142323A JP2003376666A JP2003376666A JP2005142323A JP 2005142323 A JP2005142323 A JP 2005142323A JP 2003376666 A JP2003376666 A JP 2003376666A JP 2003376666 A JP2003376666 A JP 2003376666A JP 2005142323 A JP2005142323 A JP 2005142323A
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holding plate
semiconductor module
heat radiating
radiating member
heat
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JP2005142323A5 (en
Inventor
Tetsuo Mizojiri
徹夫 溝尻
Masuo Koga
万寿夫 古賀
Yukimasa Hayashida
幸昌 林田
Yoshiaki Takei
良昭 武井
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2003376666A priority Critical patent/JP2005142323A/en
Publication of JP2005142323A publication Critical patent/JP2005142323A/en
Publication of JP2005142323A5 publication Critical patent/JP2005142323A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor module, wherein the improved adhesion between a cooling fin and heat radiating members can be achieved, while preventing the deformation of the heat radiating members resulting from a difference in the temperature and in the coefficient of thermal expansion. <P>SOLUTION: The semiconductor module comprises a plurality of insulating substrates 4, each mounted with a power semiconductor element 5 on the top face, and a plurality of heat radiating members 3, each having the insulation substrate 4 arranged on the top face. Each of the heat-radiating members 3 is set in an engagement hole 1a of a holding plate 1. In this state, the power semiconductor elements 5 are packaged in a case 2. The holding plate 1 is formed of metal and is formed with installation holes 1b. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

この発明は、半導体モジュールに係る発明であって、例えば、絶縁基板の個数単位で設けられている、複数の放熱部材を有する半導体モジュールに適用することができる。   The present invention relates to a semiconductor module, and can be applied to, for example, a semiconductor module having a plurality of heat dissipating members provided in units of the number of insulating substrates.

複数のパワー半導体素子を樹脂ケースに組み込んだ半導体モジュールとして、次に示すような技術が存在している（例えば、特許文献１参照）。   As a semiconductor module in which a plurality of power semiconductor elements are incorporated in a resin case, the following technology exists (see, for example, Patent Document 1).

特許文献１に係る従来の技術は、当該樹脂ケースの底面に開口部が穿設されている。また、当該従来の技術は、複数の放熱部材（金属ベース板）を有している。各放熱部材には、それぞれに一の絶縁基板が載置されている。ここで、各絶縁基板には、パワー半導体素子が載置されている。さらに、当該従来の技術では、絶縁基板を有する各放熱部材が、樹脂ケースの底面に穿設されている開口部に嵌入されている。   In the conventional technique according to Patent Document 1, an opening is formed in the bottom surface of the resin case. Moreover, the said prior art has a several heat radiating member (metal base board). Each heat dissipating member is provided with one insulating substrate. Here, a power semiconductor element is placed on each insulating substrate. Further, in the related art, each heat radiating member having an insulating substrate is fitted into an opening formed in the bottom surface of the resin case.

そして、複数のパワー半導体素子を樹脂ケースに組み込んだ状態において、当該半導体モジュールは、底面において冷却フィンと接合される。ここで、当該接合は、樹脂ケースの底面の４隅に穿設されているネジ孔と、冷却フィンの４隅に穿設されているネジ孔とに、ネジを螺合することにより行われる。   Then, in a state where the plurality of power semiconductor elements are incorporated in the resin case, the semiconductor module is joined to the cooling fin on the bottom surface. Here, the joining is performed by screwing screws into the screw holes drilled at the four corners of the bottom surface of the resin case and the screw holes drilled at the four corners of the cooling fin.

当該従来の技術のように、放熱部材を各絶縁基板毎に分割して設けることにより、製造途中で熱処理を施したとしても、温度差や熱膨張率に起因する放熱部材の変形を抑制する等の効果を奏することができていた。   As in the related art, by providing the heat radiating member separately for each insulating substrate, even if heat treatment is performed during manufacturing, the deformation of the heat radiating member due to the temperature difference or the coefficient of thermal expansion is suppressed. It was possible to have the effect of.

特開平８−２１３５４７号公報（第１図、第３欄の第１１段落等）JP-A-8-213547 (FIG. 1, 11th paragraph in column 3, etc.)

しかし、上記従来の技術では、半導体モジュールに冷却フィンを接合する場合において、樹脂製のケースにネジ孔が穿設されていたために、ネジ孔の強度が弱く、ネジを強く締めることができなかった。したがって、冷却フィンと放熱部材との密着性が悪くなり、放熱効果が減退していた。   However, in the above conventional technique, when the cooling fin is joined to the semiconductor module, since the screw hole is formed in the resin case, the strength of the screw hole is weak and the screw cannot be tightened strongly. . Therefore, the adhesion between the cooling fin and the heat radiating member is deteriorated, and the heat radiating effect is reduced.

そこで、この発明は、放熱部材における温度差や熱膨張率に起因する当該放熱部材の変形を抑制しつつ、冷却フィンと放熱部材との密着性を向上させることができる、半導体モジュールを提供することを目的とする。   Therefore, the present invention provides a semiconductor module capable of improving the adhesion between the cooling fin and the heat radiating member while suppressing deformation of the heat radiating member due to a temperature difference or a coefficient of thermal expansion in the heat radiating member. With the goal.

上記の目的を達成するために、本発明に係る請求項１に記載の半導体モジュールは、上面に半導体素子が配設された複数の絶縁基板と、上面に各前記絶縁基板が配設さえた複数の放熱部材と、各前記放熱部材が嵌入すべき複数の嵌入孔を有する保持板と、前記保持板の前記嵌入孔に前記放熱部材が嵌入されている状態において、前記保持板の外周縁部で前記半導体素子を囲繞するケースとを、備えており、前記保持板は金属製であり、取付孔が穿設されている。   In order to achieve the above object, a semiconductor module according to claim 1 according to the present invention includes a plurality of insulating substrates having a semiconductor element disposed on an upper surface and a plurality of insulating substrates disposed on an upper surface. In the state where the heat radiating member, the holding plate having a plurality of insertion holes into which the heat radiating members are to be inserted, and the heat radiating member are inserted into the insertion holes of the holding plate, the outer peripheral edge portion of the holding plate A case surrounding the semiconductor element, wherein the holding plate is made of metal and has a mounting hole.

本発明の請求項１に記載の半導体モジュールは、上面に半導体素子が配設された複数の絶縁基板と、上面に各前記絶縁基板が配設さえた複数の放熱部材と、各前記放熱部材が嵌入すべき複数の嵌入孔を有する保持板と、前記保持板の前記嵌入孔に前記放熱部材が嵌入されている状態において、前記保持板の外周縁部で前記半導体素子を囲繞するケースとを、備えており、前記保持板は金属製であり、取付孔が穿設されているので、例えば半導体モジュールと冷却フィンとを接合させるために、ネジ等を用いて強い力で締め付けることができる。よって、熱膨張率に起因する放熱部材の変形を抑制しつつ、冷却フィンと放熱部材との密着性を向上させることができる。また保持板は、放熱部材をより水平に保持する必要がある。これは、放熱部材が傾いて保持されると、冷却フィンとの接触が悪くなるからである。そこで、半導体モジュールの保持板は金属製であるので、プレス加工等を容易に行うことができる。よって、放熱部材の水平保持を考慮した、保持板の嵌入孔の精密な加工も可能となる。   The semiconductor module according to claim 1 of the present invention includes a plurality of insulating substrates each having a semiconductor element disposed on an upper surface, a plurality of heat radiating members each having the insulating substrate disposed on an upper surface, and each of the heat radiating members. A holding plate having a plurality of insertion holes to be inserted, and a case surrounding the semiconductor element at an outer peripheral edge of the holding plate in a state where the heat dissipation member is inserted into the insertion hole of the holding plate; Since the holding plate is made of metal and has a mounting hole, for example, in order to join the semiconductor module and the cooling fin, the holding plate can be tightened with a strong force using a screw or the like. Therefore, the adhesion between the cooling fin and the heat radiating member can be improved while suppressing the deformation of the heat radiating member due to the coefficient of thermal expansion. Further, the holding plate needs to hold the heat dissipation member more horizontally. This is because if the heat dissipating member is tilted and held, the contact with the cooling fins deteriorates. Therefore, since the holding plate of the semiconductor module is made of metal, press working or the like can be easily performed. Therefore, it is possible to precisely process the insertion hole of the holding plate in consideration of horizontal holding of the heat radiating member.

以下、この発明をその実施の形態を示す図面に基づいて具体的に説明する。   Hereinafter, the present invention will be specifically described with reference to the drawings showing embodiments thereof.

＜実施の形態１＞
本実施の形態に係る半導体モジュールの上面を示す平面図を、図１に示す。また、図１のＡ−Ａ断面の断面図を、図２に示す。 <Embodiment 1>
FIG. 1 is a plan view showing the upper surface of the semiconductor module according to the present embodiment. FIG. 2 is a cross-sectional view taken along the line AA of FIG.

図２に示すように、本実施の形態に係る半導体モジュールの外形は、半導体モジュールの底面を構成する保持板１と、半導体モジュールの上面及び側面を構成するケース２とで成立している。   As shown in FIG. 2, the outer shape of the semiconductor module according to the present embodiment is formed by a holding plate 1 that forms the bottom surface of the semiconductor module and a case 2 that forms the top surface and side surfaces of the semiconductor module.

ここで、保持板１とケース２とは、例えば接着材であるシール材９等を用いて保持板１の外周縁部で接続されている。また、保持板１は金属製の部材であり、ケース２は、樹脂製の部材である。さらに、保持板１には、複数の嵌入孔１ａが穿設されている。嵌入孔１ａは、外側が大径、内側が小径となる段階的に穿設されており、例えば図２から分かるように、２つの嵌入孔１ａ間に存する保持板１の断面形状は、Ｔ字状であり、嵌入孔１ａと保持板１の端部との間に存する保持板１の断面形状は、Ｌ字状となっている。   Here, the holding plate 1 and the case 2 are connected to each other at the outer peripheral edge portion of the holding plate 1 using, for example, a sealing material 9 that is an adhesive. The holding plate 1 is a metal member, and the case 2 is a resin member. Further, the holding plate 1 is provided with a plurality of insertion holes 1a. The insertion hole 1a is formed in a stepwise manner in which the outer side has a large diameter and the inner side has a small diameter. For example, as can be seen from FIG. 2, the cross-sectional shape of the holding plate 1 existing between the two insertion holes 1a is T-shaped. The cross-sectional shape of the holding plate 1 existing between the insertion hole 1a and the end of the holding plate 1 is L-shaped.

また、図１に示すように、ケース２には、周辺部において数箇所切欠き部２ａが設けられており、当該切欠き部２ａから露出している保持板１には、冷却フィンの取付孔であるネジ孔１ｂが設けられている。   Further, as shown in FIG. 1, the case 2 is provided with several notches 2a in the peripheral portion, and the holding plate 1 exposed from the notch 2a has a cooling fin mounting hole. Is provided with a screw hole 1b.

また、図２に示しているように、本実施の形態に係る半導体モジュールは、金属ベース板である放熱部材３、絶縁基板４およびパワー半導体素子５等を有している。ここで、放熱部材３の側面は、嵌入孔１ａの段々に合わせた末広がりとなる階段形状となっている。また、放熱部材３は複数個であり、一の放熱部材３は、一の絶縁基板４を有しており、一の絶縁基板４には、複数のパワー半導体素子５が搭載されている。   As shown in FIG. 2, the semiconductor module according to the present embodiment includes a heat radiating member 3, an insulating substrate 4, and a power semiconductor element 5 that are metal base plates. Here, the side surface of the heat radiating member 3 has a staircase shape that expands toward the end of the insertion hole 1a. The heat radiating member 3 is plural, and one heat radiating member 3 has one insulating substrate 4, and a plurality of power semiconductor elements 5 are mounted on the one insulating substrate 4.

具体的に、絶縁基板４上には、回路パターンである電極部６が形成されており、この電極部６を介して、複数のパワー半導体素子５が配置されている。ここで、パワー半導体素子５と電極部６とは、はんだ１０により接合されている。はんだ１０の厚さは、ヒートサイクル時の熱ストレスによる当該はんだ１０の熱耐性及び放熱性を考慮して、５０μｍ〜１００μｍ程度であることが望ましい。また、複数のパワー半導体素子５は、アルミ配線７等により電気的に接続されている。   Specifically, an electrode portion 6 that is a circuit pattern is formed on the insulating substrate 4, and a plurality of power semiconductor elements 5 are arranged through the electrode portion 6. Here, the power semiconductor element 5 and the electrode portion 6 are joined by solder 10. The thickness of the solder 10 is preferably about 50 μm to 100 μm in consideration of the heat resistance and heat dissipation of the solder 10 due to thermal stress during the heat cycle. The plurality of power semiconductor elements 5 are electrically connected by aluminum wiring 7 or the like.

絶縁基板４の下面には金属パターン８が形成されており、複数のパワー半導体素子５を有する絶縁基板４の下面は、金属パターン８を介して放熱部材３の上面に載置されている。ここで、放熱部材３と金属パターン８とは、はんだ１０により接合されている。はんだ１０の厚さは、ヒートサイクル時の熱ストレスによる当該はんだ１０の熱耐性を考慮して、１００μｍ〜３００μｍ程度であることが望ましい。   A metal pattern 8 is formed on the lower surface of the insulating substrate 4, and the lower surface of the insulating substrate 4 having the plurality of power semiconductor elements 5 is placed on the upper surface of the heat dissipation member 3 via the metal pattern 8. Here, the heat radiating member 3 and the metal pattern 8 are joined by the solder 10. The thickness of the solder 10 is preferably about 100 μm to 300 μm in consideration of the heat resistance of the solder 10 due to thermal stress during the heat cycle.

図２から分かるように、上記各部材（絶縁基板４やパワー半導体素子５等）が搭載された各放熱部材３は、その搭載側をケースの内側にして、保持板１に穿設されている各嵌入孔１ａに、各々嵌入されている。つまり、各パワー半導体素子５は、保持板１の外周縁部においてケース２により囲繞されている。   As can be seen from FIG. 2, each heat dissipating member 3 on which each of the above members (the insulating substrate 4, the power semiconductor element 5, etc.) is mounted is formed in the holding plate 1 with the mounting side inside the case. Each is inserted into each insertion hole 1a. That is, each power semiconductor element 5 is surrounded by the case 2 at the outer peripheral edge portion of the holding plate 1.

ここで、放熱部材３側面の階段部の上面が、段階的に穿設されている嵌入孔１ａ内の保持板１の下面で係り止められている。また、当該階段部の上面と当該嵌入孔１ａ内の保持板１の下面との間には、接着剤であるシール材９が充填されており、当該シール材９により、保持板１は放熱部材３を接着・保持している。さらに、放熱部材３が保持板１に保持されている状態において、放熱部材３の下面は、保持板１の下面よりも突出している。   Here, the upper surface of the stepped portion on the side surface of the heat radiating member 3 is locked by the lower surface of the holding plate 1 in the insertion hole 1a formed in stages. Further, a sealing material 9 as an adhesive is filled between the upper surface of the stepped portion and the lower surface of the holding plate 1 in the insertion hole 1a, and the holding plate 1 is radiated by the sealing material 9. 3 is adhered and held. Furthermore, in a state where the heat dissipation member 3 is held by the holding plate 1, the lower surface of the heat dissipation member 3 protrudes from the lower surface of the holding plate 1.

以上のように、図２に示すように、保持板１がケース２と接合し、保持板１に穿設されている複数の嵌入孔１ａに、各部材４，５等を有する放熱部材３を各々嵌入させることにより、半導体モジュールは構成されている。なお、保持板１とケース２とで囲まれた空間には、シリコンゲル１１が充填されている。また、パワー半導体素子５等から構成されている回路から突出している電極部１２は、ケース２の内部を貫通しており、当該ケース２の上面において外部接続可能に配設されている。   As described above, as shown in FIG. 2, the holding plate 1 is joined to the case 2, and the heat dissipating member 3 having the members 4, 5 and the like is provided in the plurality of insertion holes 1 a formed in the holding plate 1. The semiconductor module is configured by inserting each of them. A space surrounded by the holding plate 1 and the case 2 is filled with silicon gel 11. Further, the electrode portion 12 protruding from the circuit constituted by the power semiconductor element 5 or the like penetrates the inside of the case 2 and is disposed on the upper surface of the case 2 so as to be externally connectable.

上記構成を有する半導体モジュールは、ネジやボルト等を用いて、冷却フィンと接合される。   The semiconductor module having the above configuration is joined to the cooling fin using screws, bolts, or the like.

具体的に、図３に示すように、保持板１に穿設されているネジ孔１ｂに、ネジ１５を通し、冷却フィン１６に設けられているネジ孔に対して、ネジ１５を螺合するこで、当該螺合により、半導体モジュールは、冷却フィン１６と接合される。   Specifically, as shown in FIG. 3, the screw 15 is passed through the screw hole 1 b formed in the holding plate 1, and the screw 15 is screwed into the screw hole provided in the cooling fin 16. Here, the semiconductor module is joined to the cooling fin 16 by the screwing.

本実施の形態に係る半導体モジュールでは、各絶縁基板４毎に放熱部材３を分割して設けているので、製造途中ではんだ付け等の熱処理を施したとしても、放熱部材３の各部所における温度差および当該放熱部材３の熱膨張率等に起因した、当該放熱部材３の変形を抑制することができる。   In the semiconductor module according to the present embodiment, the heat radiating member 3 is provided separately for each insulating substrate 4, so even if heat treatment such as soldering is performed during the manufacturing, the temperature at each part of the heat radiating member 3 The deformation of the heat radiating member 3 due to the difference and the coefficient of thermal expansion of the heat radiating member 3 can be suppressed.

さらに、本実施の形態に係る半導体モジュールでは、保持板１は、剛性の高い金属製である。そして、当該金属製の保持板１には、複数のネジ孔１ｂが穿設されている。したがって、図３で示したように、半導体モジュールと冷却フィン１６とを接合させるために、ネジ等を用いて強い力で締め付けることができる。これにより、従来の樹脂製のケースに冷却フィンを取付けるときと比較して、半導体モジュールと冷却フィン１６との接触向上を図ることができる。   Furthermore, in the semiconductor module according to the present embodiment, the holding plate 1 is made of a highly rigid metal. The metal holding plate 1 has a plurality of screw holes 1b. Therefore, as shown in FIG. 3, in order to join the semiconductor module and the cooling fin 16, it can be tightened with a strong force using a screw or the like. Thereby, the contact improvement of a semiconductor module and the cooling fin 16 can be aimed at compared with the time of attaching a cooling fin to the conventional resin-made cases.

また、保持板１は、放熱部材３をより水平に保持する必要がある。これは、放熱部材３が傾いて保持されると、冷却フィン１６との接触が悪くなるからである。したがって、保持板１に段階的に穿設されている嵌入孔１ａの加工には、精密さが要求される。   Moreover, the holding plate 1 needs to hold | maintain the heat radiating member 3 more horizontally. This is because if the heat radiating member 3 is tilted and held, the contact with the cooling fins 16 becomes worse. Therefore, precision is required for processing the insertion hole 1a formed in the holding plate 1 in stages.

本実施の形態に係る半導体モジュールの保持板１は、金属製であるので、プレス加工等を容易に行うことができる。よって、放熱部材３の水平保持を考慮した、保持板１の嵌入孔１ａの精密な加工も可能となる。   Since the holding plate 1 of the semiconductor module according to the present embodiment is made of metal, press working or the like can be easily performed. Therefore, precise processing of the insertion hole 1a of the holding plate 1 in consideration of horizontal holding of the heat radiating member 3 is also possible.

また、放熱部材３が保持板１に保持されている状態において、放熱部材３の下面は、保持板１の下面よりも突出しているので、ネジ１５の締付によってより確実に、放熱部材３を冷却フィン１６に接合することができ、より放熱効果を向上させることができる。   Further, in a state where the heat radiating member 3 is held by the holding plate 1, the lower surface of the heat radiating member 3 protrudes from the lower surface of the holding plate 1, so that the heat radiating member 3 can be more securely attached by tightening the screws 15. It can join to the cooling fin 16, and can improve the heat dissipation effect more.

一方、図４に示すように、放熱部材３の上面の幅が、下面の幅よりも大きくなるように、放熱部材３の側面を階段形状に形成し、側面の当該階段形状の階段部の下面と保持板１の上面部とが接するように、放熱部材３を保持板１の嵌入孔１ａに嵌入してもよい。   On the other hand, as shown in FIG. 4, the side surface of the heat radiating member 3 is formed in a staircase shape so that the width of the upper surface of the heat radiating member 3 is larger than the width of the lower surface, and the lower surface of the staircase portion of the stepped shape on the side surface. The heat radiating member 3 may be inserted into the insertion hole 1 a of the holding plate 1 so that the upper surface of the holding plate 1 is in contact with the upper surface portion.

しかし、図２で示したように、放熱部材３の側面を末広がりとなる階段形状とし、放熱部材３側面の階段部の上面が、段階的に穿設されている嵌入孔１ａ内の保持板１の下面で係り止められている構造を採用することにより、冷却フィン１６と接合する放熱部材３の面積が増大し、より放熱効果を向上させることができる。   However, as shown in FIG. 2, the side surface of the heat radiating member 3 has a stepped shape that widens toward the end, and the upper surface of the stepped portion on the side surface of the heat radiating member 3 has a holding plate 1 in the insertion hole 1 a that is formed stepwise. By adopting the structure that is held on the lower surface of the heat radiation member 3, the area of the heat radiation member 3 joined to the cooling fin 16 is increased, and the heat radiation effect can be further improved.

また、放熱部材３が保持板１の嵌入孔１ａに嵌入されている状態において、保持板１の上面が、放熱部材３の上面より上となるように構成しても良い。しかし、図２に示しているように、放熱部材３が保持板１の嵌入孔１ａに嵌入されている状態において、保持板１の上面が、放熱部材３の上面以下の位置になるように構成することにより、ケース２と保持板１との間に存する空間が広く取れ、他の部品を配設するなど当該空間を有効活用することができる。   Further, the upper surface of the holding plate 1 may be configured to be higher than the upper surface of the heat radiating member 3 in a state where the heat radiating member 3 is fitted in the fitting hole 1 a of the holding plate 1. However, as shown in FIG. 2, the upper surface of the holding plate 1 is positioned below the upper surface of the heat radiating member 3 in a state where the heat radiating member 3 is inserted into the insertion hole 1 a of the holding plate 1. By doing so, the space which exists between the case 2 and the holding | maintenance board 1 can be taken widely, and the said space can be used effectively, such as arrange | positioning other components.

＜実施の形態２＞
本実施の形態に係る半導体モジュールの断面図を図５に示す。 <Embodiment 2>
FIG. 5 shows a cross-sectional view of the semiconductor module according to the present embodiment.

本実施の形態に係る半導体モジュールは、実施の形態１に係る半導体モジュールとほぼ同じ構成であるが、以下の点において異なる。   The semiconductor module according to the present embodiment has substantially the same configuration as the semiconductor module according to the first embodiment, but differs in the following points.

つまり、図５に示している様に、本実施の形態に係る半導体モジュールの保持板１に穿設されている嵌入孔１ａは、外側も内側も同径であって段階的に形成されておらず、嵌入孔１ａと嵌入孔１ａとの間に存する保持板１の断面形状は平板形状であり、また、嵌入孔１ａと保持板１の端部との間に存する保持板１の断面形状も、平面形状である。   That is, as shown in FIG. 5, the insertion hole 1a formed in the holding plate 1 of the semiconductor module according to the present embodiment has the same diameter on the outer side and the inner side and is formed stepwise. The cross-sectional shape of the holding plate 1 existing between the insertion hole 1a and the insertion hole 1a is a flat plate shape, and the cross-sectional shape of the holding plate 1 existing between the insertion hole 1a and the end of the holding plate 1 is also the same. It is a planar shape.

ここで、嵌入孔１ａと保持板１の端部との間に存する保持板１の断面形状は、実施の形態１と同様に、Ｌ字形状であってもよい。しかし、嵌入孔１ａと嵌入孔１ａとの間に存する保持板１の断面形状を平板形状とする場合には、嵌入孔１ａと保持板１の端部との間に存する保持板１の断面形状も平面形状とする方が、嵌入孔１ａを有する保持板１の加工を容易に行うことができる。   Here, the cross-sectional shape of the holding plate 1 existing between the insertion hole 1 a and the end of the holding plate 1 may be an L-shape as in the first embodiment. However, when the cross-sectional shape of the holding plate 1 existing between the insertion hole 1a and the insertion hole 1a is a flat plate shape, the cross-sectional shape of the holding plate 1 existing between the insertion hole 1a and the end of the holding plate 1 Further, when the flat shape is used, the holding plate 1 having the insertion holes 1a can be easily processed.

その他の部材の構成は、実施の形態１と同様であるので、ここでの説明は省略する。   Since the configuration of other members is the same as that of the first embodiment, the description thereof is omitted here.

以上のように、本実施の形態に係る半導体モジュールでは、嵌入孔１ａと嵌入孔１ａとの間に存する保持板１の断面形状が平板形状であるので、嵌入孔１ａと嵌入孔１ａとの間に存する保持板１の水平長さをより短く設定することができる。よって、保持板１に各部材４，５を搭載した放熱部材３を嵌入孔１ａに嵌入した状態において、実施の形態１よりも、放熱部材３同士を互いにより接近させることができる。よって、半導体モジュール全体の縮小化を図ることができる。   As described above, in the semiconductor module according to the present embodiment, since the cross-sectional shape of the holding plate 1 existing between the insertion hole 1a and the insertion hole 1a is a flat plate shape, it is between the insertion hole 1a and the insertion hole 1a. The horizontal length of the holding plate 1 can be set shorter. Therefore, in the state which inserted the heat dissipation member 3 which mounted each member 4 and 5 on the holding plate 1 in the insertion hole 1a, the heat dissipation members 3 can be brought closer to each other as compared with the first embodiment. Therefore, the entire semiconductor module can be reduced.

＜実施の形態３＞
本実施の形態に係る半導体モジュールの断面図を図６に示す。 <Embodiment 3>
A cross-sectional view of the semiconductor module according to the present embodiment is shown in FIG.

本実施の形態に係る半導体モジュールは、実施の形態１に係る半導体モジュールとほぼ同じ構成であるが、以下の点において異なる。   The semiconductor module according to the present embodiment has substantially the same configuration as the semiconductor module according to the first embodiment, but differs in the following points.

つまり、図６に示している様に、本実施の形態に係る半導体モジュールの放熱部材３の側面は、２段からなる階段部を有する、末広がりの階段形状となっている。そして、放熱部材３の下面側から最初の階段部の上面が、段階的に穿設されている嵌入孔１ａ内の保持板１の下面で係り止められている。   That is, as shown in FIG. 6, the side surface of the heat radiating member 3 of the semiconductor module according to the present embodiment has a stair shape that spreads toward the end and has a two-step staircase. And the upper surface of the first step part from the lower surface side of the heat radiating member 3 is locked by the lower surface of the holding plate 1 in the insertion hole 1a drilled in stages.

そして、絶縁基板４の外周縁部は、放熱部材３の下面側から２段目の階段部の上面と対面している。つまり、絶縁基板４の外周縁部と対面する放熱部材３の上面は掘り下げられている。   The outer peripheral edge of the insulating substrate 4 faces the upper surface of the second stepped portion from the lower surface side of the heat dissipation member 3. That is, the upper surface of the heat radiating member 3 facing the outer peripheral edge of the insulating substrate 4 is dug down.

その他の部材の構成は、実施の形態１と同様であるので、ここでの説明は省略する。   Since the configuration of other members is the same as that of the first embodiment, the description thereof is omitted here.

以上のように、絶縁基板４の外周縁部と対面する放熱部材３の上面は掘り下げられているので、絶縁基板４の外周縁部と、これに対面する放熱部材３の上面との間の絶縁耐性を大きくすることができる。   As described above, since the upper surface of the heat radiating member 3 facing the outer peripheral edge of the insulating substrate 4 is dug down, the insulation between the outer peripheral edge of the insulating substrate 4 and the upper surface of the heat radiating member 3 facing this. Resistance can be increased.

実施の形態１に係る半導体モジュールの上面を示す平面図である。FIG. 3 is a plan view showing an upper surface of the semiconductor module according to the first embodiment. 実施の形態１に係る半導体モジュールの断面を示す断面図である。FIG. 3 is a cross-sectional view showing a cross section of the semiconductor module according to the first embodiment. 半導体モジュールと冷却フィンとの接合の様子を示す上面斜視図である。It is an upper surface perspective view which shows the mode of joining of a semiconductor module and a cooling fin. 実施の形態１に係る半導体モジュールの他の例を示す断面図である。FIG. 6 is a cross-sectional view showing another example of the semiconductor module according to the first embodiment. 実施の形態２に係る半導体モジュールの断面を示す断面図である。FIG. 4 is a cross-sectional view showing a cross section of a semiconductor module according to a second embodiment. 実施の形態３に係る半導体モジュールの断面を示す断面図である。FIG. 6 is a cross-sectional view showing a cross section of a semiconductor module according to a third embodiment.

符号の説明Explanation of symbols

１ 保持板、１ａ 嵌入孔、１ｂ ネジ孔、２ ケース、２ａ 切欠き部、３ 放熱部材、４ 絶縁基板、５ パワー半導体素子、６，１２ 電極部、７ アルミ配線、８ 導電部、９ シール材、１０ はんだ、１１ シリコンゲル、１５ ネジ、１６ 冷却フィン。
DESCRIPTION OF SYMBOLS 1 Holding plate, 1a Insertion hole, 1b Screw hole, 2 Case, 2a Notch part, 3 Heat radiating member, 4 Insulating board, 5 Power semiconductor element, 6,12 Electrode part, 7 Aluminum wiring, 8 Conductive part, 9 Sealing material 10 solder, 11 silicon gel, 15 screws, 16 cooling fins.

Claims (5)

上面に半導体素子が配設された複数の絶縁基板と、
上面に各前記絶縁基板が配設さえた複数の放熱部材と、
各前記放熱部材が嵌入すべき複数の嵌入孔を有する保持板と、
前記保持板の外周縁部で支持されており、前記保持板の前記嵌入孔に前記放熱部材が嵌入されている状態において、前記半導体素子を囲繞するケースとを、備えており、
前記保持板は金属製であり、取付孔が穿設されている、
ことを特徴とする半導体モジュール。 A plurality of insulating substrates each having a semiconductor element disposed on the upper surface;
A plurality of heat dissipating members each having the insulating substrate disposed on the upper surface;
A holding plate having a plurality of insertion holes into which each of the heat dissipation members is to be inserted;
Supported by the outer peripheral edge of the holding plate, and in a state where the heat dissipation member is inserted into the insertion hole of the holding plate, and a case surrounding the semiconductor element,
The holding plate is made of metal and has a mounting hole.
A semiconductor module characterized by that. 前記嵌入孔間に存する前記保持板の断面形状は、平板形状である、
ことを特徴とする請求項１に記載の半導体モジュール。 The cross-sectional shape of the holding plate existing between the insertion holes is a flat plate shape.
The semiconductor module according to claim 1. 前記放熱部材の側面は、末広がりとなる階段形状であり、
前記放熱部材の前記階段形状の階段部の上面が、前記保持板の下面で係り止めされている、
ことを特徴とする請求項１に記載の半導体モジュール。 The side surface of the heat radiating member has a staircase shape that expands toward the end,
The upper surface of the stepped staircase portion of the heat radiating member is locked with the lower surface of the holding plate,
The semiconductor module according to claim 1. 前記放熱部材が前記保持板に嵌入されている状態において、
前記保持板の上面は、前記放熱部材の上面以下の位置に存する、
ことを特徴とする請求項１に記載の半導体モジュール。 In the state where the heat dissipation member is fitted in the holding plate,
The upper surface of the holding plate exists at a position below the upper surface of the heat dissipation member,
The semiconductor module according to claim 1. 前記放熱部材が前記保持板の前記嵌入孔に嵌入されている状態において、
前記放熱部材の下面は、前記保持板の下面よりも突出している、
ことを特徴とする請求項１に記載の半導体モジュール。
In the state where the heat dissipation member is inserted into the insertion hole of the holding plate,
The lower surface of the heat dissipation member protrudes from the lower surface of the holding plate,
The semiconductor module according to claim 1.
JP2003376666A 2003-11-06 2003-11-06 Semiconductor module Pending JP2005142323A (en)

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