JP2005015308A - Porous silica film and laminated body having it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a porous silica film excellent in the balance of physical properties such as easiness at a laminating step, stain-proofness, chemical resistance and high mechanical strength and the like and to provide a laminated body using it. <P>SOLUTION: The porous silica film has a pore diameter of 0.5-100 nm, a void content of 35% or more and surface roughness Ra of 10 nm or less. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a porous silica film excellent in surface smoothness and a laminate having the same.
[0002]
[Prior art]
Recently, transmission delay of electric signals has become a problem due to the wiring density of LSIs that will be further miniaturized in the future, and a porous film characterized by a lower dielectric constant is attracting attention as its insulating film. In addition to a semiconductor material, it has a possibility as an optical material such as a low reflection film as a porous film characterized by a low refractive index. As a material for such a porous membrane, silica is different from an organic type and has extremely excellent heat resistance and light weight, so that the production technology of the silica-based porous membrane will occupy a very important position in the future. I can say that.
[0003]
However, in the above applications, not only the mechanical strength of the material but also the smoothness of the material is required at the same time when the transparent electrode layer is laminated.
[0004]
A typical example of porous silica is silica aerogel produced by a sol-gel reaction. Here, the sol-gel reaction is a reaction in which a colloidal substance in which particles called a sol are dispersed in a liquid is used as an intermediate to change it into a solid gel. In the case of silica, for example, when an alkoxysilane compound is used as a raw material, a sol is obtained by dispersing particles of a three-dimensional crosslinked structure obtained by hydrolysis and dehydration condensation reaction in a solvent, and further, the particles are subjected to hydrolysis and condensation reaction. The gel is a state in which a solid network containing a solvent is formed. A feature of the silica airgel is that the solvent in the silica is removed in a supercritical state. Although this method can provide very high porosity, it has several problems, such as not only the surface roughness of the film, but also mechanical properties, film thickness control, economy, and the like.
[0005]
As an example of forming a thin film of silica xerogel, which is another example of porous silica, there is a method in which a specific solvent such as glycerol is contained in a solution at the time of preparation when a silica precursor as a sol is used as a coating solution. is there. Thus, a method is disclosed in which the pore size and pore size distribution of silica xerogel obtained through subsequent gelation and solvent removal are controlled to improve the mechanical strength of the porous body (for example, Patent Documents 1 and 2). reference). However, in this example, the high-boiling point solvent is not completely removed by removing the solvent, which causes a problem of impurities in the film. Further, the film shrinks during drying, and sufficient surface smoothness and mechanical strength are obtained. There is also a problem that it is not possible.
[0006]
Recently, a method of using an organic polymer as a mold for pores has been actively proposed. For example, a sol-gel reaction of alkoxysilane is carried out in the presence of a specific organic polymer, once a silica gel / organic polymer composite is produced, and then the organic polymer is removed to obtain porous silica having a uniform pore size. A method is disclosed (for example, see Patent Document 3). Although this method has the advantage that the pore diameter and porosity can be controlled by the organic polymer to be added, it is necessary to burn and remove these organic polymers at a high temperature. There is a problem that sufficient surface smoothness and mechanical strength cannot be obtained.
[0007]
On the other hand, a silica-based material rich in smoothness is also known (see, for example, Patent Document 4), but is poor in porosity and cannot be applied to the above-mentioned uses. Moreover, when porosity is added to such a silica material, a flat portion and a concave portion are formed on the surface, and sufficient smoothness and porosity cannot be obtained (for example, see Patent Document 5).
[0008]
None of the above-described conventional methods can provide a material having both surface smoothness and porosity required for optical materials and semiconductor materials, and also in terms of industrial productivity and manufacturing cost. It was not satisfactory enough.
[0009]
[Patent Document 1]
US Pat. No. 5,807,607
[Patent Document 2]
US Patent No. 5900879
[Patent Document 3]
JP-A-4-285081
[Patent Document 4]
WO99 / 02853
[Patent Document 5]
JP-A-9-314715
[0010]
[Problems to be solved by the invention]
An object of the present invention is to provide a silica film excellent in ease of laminating process, antifouling property and mechanical strength by having an extremely smooth surface property which has a pore characteristic and is unprecedented, and uses the same. Another object of the present invention is to provide a laminate suitable for a semiconductor material and an optical material.
[0011]
[Means for Solving the Problems]
In order to solve the above problems, the present inventors have conducted extensive studies, and as a result, a porous silica film having nanometer-sized pores and having porosity useful for semiconductor materials and optical material applications has been conventionally used. The present inventors have found that the above-mentioned material having an extremely smooth surface property that is excellent in ease of lamination process, antifouling property, and mechanical strength can be obtained, and the present invention has been completed.
[0012]
In order to achieve the above object, the porous silica film of the present invention has a pore diameter of 0.5 to 100 nm, a porosity of 35% or more, and a surface roughness Ra = 10 nm or less.
[0013]
According to the present invention, by providing a hole structure with a hole diameter of 0.5 to 100 nm, sufficient mechanical strength for applications such as semiconductor materials and optical materials can be obtained even with a porosity of 35% or more, and The pores can provide a transparent material because they are filled with air. In particular, low dielectric constant silica materials that are attracting attention in the future require not only the reduction of dielectric constant due to porosity, but also the required pore size of nanometers, as LSI materials are shrinking. It has become. Therefore, in addition to high porosity, the small pore sizes described above are extremely effective.
[0014]
Furthermore, when the surface roughness Ra of the porous silica film of the present invention is 10 nm or less, a laminated structure generated in applications such as semiconductor materials and optical materials can be facilitated. For example, even if a transparent electrode layer such as ITO is laminated on the porous silica film of the present invention, protrusions and depressions are prevented, and the performance of the transparent electrode layer is hardly impaired.
[0015]
In the porous silica membrane of the present invention, it is preferable that the vacancies are continuous communication holes. According to the present invention, a porous silica film having excellent mechanical strength can be provided.
Furthermore, the porous silica film of the present invention preferably has a thickness of 50 to 2000 nm from the viewpoint of environmental stability in the above-mentioned applications.
[0016]
A laminate for achieving the above object has the above-described porous silica film of the present invention on a substrate. The laminate of the present invention is characterized in that the substrate is transparent or a semiconductor substrate.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
The porous silica film of the present invention has pores filled with air or gas. Therefore, the physical constants such as the apparent density, dielectric constant, and refractive index of the porous silica film can be controlled by adjusting the pore diameter and the porosity (the amount of pores). By appropriately having an average pore diameter of 0.5 to 100 nm, it can be applied as a semiconductor material (such as a low dielectric constant material) excellent in mechanical strength and an optical material (such as a low refractive material or antireflection material). The average pore diameter is preferably 0.5 to 50 nm, more preferably the average pore diameter 1 to 20 nm, and most preferably the average pore diameter 3 to 20 nm. Conversely, if the average pore diameter is larger than 100 nm, the surface properties of the porous silica film are adversely affected. If the average pore diameter is smaller than 1 nm, the active groups on the pore wall surface approach each other, so that the stability of the porous silica film is impaired. And it becomes difficult to increase the porosity. Similarly, it is necessary that the porosity is 35% or more in order to have a function excellent in applications such as semiconductor materials and optical materials. The porosity is preferably 45% or more, more preferably 55% or more, and most preferably 65% or more. On the other hand, when the porosity is 75% or more, the mechanical strength of the porous silica film is remarkably impaired, and the surface property is also deteriorated.
[0018]
The average pore diameter and porosity can be measured by a nitrogen adsorption method, a transmission electron microscope (TEM), and a scanning electron microscope (SEM). In the case of electron microscope measurement, it can be determined by taking an electron micrograph of an electron beam acceleration voltage of 5 kV and an observation magnification of 1000 to 10,000 times and analyzing the cross-sectional image thereof. As a SEM observation sample, a laminate obtained by forming this porous silica film on a substrate was used as a sample, and mechanical shock was applied in a state where the sample was cooled and embrittled with liquid nitrogen. The brittle fracture surface was used. As this brittle fracture surface, a sample which was not deposited on a thin film of a conductive material such as metal or carbon, which is generally used for the purpose of improving the conductivity of the sample surface, was used. Further, as described above, since the porosity has a correlation with the refractive index, it could be evaluated by a spectroscopic ellipsometer. The porosity is confirmed by the result of measurement by spectroscopic ellipsometry (manufactured by Sopra Co., Ltd .: GES-5) in which the wavelength range of the measurement light is 250 to 850 nm.
[0019]
Unlike the conventional method, the porous silica film of the present invention has a very smooth surface property. The porous silica film is characterized in that it has few concave portions often found in conventional porous silica films and has a surface roughness Ra = 10 nm or less. The surface roughness Ra is preferably 5 nm or less, more preferably the surface roughness Ra is 3 nm or less, further preferably the surface roughness Ra is 1 nm or less, and most preferably the surface roughness Ra is 0.5 nm or less. When the surface roughness Ra is larger than 10 nm, various troubles may be caused in the lamination process on the porous silica film. On the other hand, when the surface roughness Ra is smaller than 0.2 nm, the adhesion of the laminated film on the porous silica film is lowered.
[0020]
The surface roughness Ra used in the present invention is a numerical value defined by JIS-B0601. For measurement of the surface roughness Ra, a stylus type step / surface roughness / fine shape measuring device (manufactured by KLA Tencor Corporation: P-15) was used. Measurement conditions were such that the surface was not damaged, a stylus force (tactile pressure) of 0.2 mg to obtain an accurate surface roughness, a scanning speed of 20 μm / second, and a scanning distance of 500 μm to evaluate the smoothness as wide as possible. did. The calculation of the surface roughness Ra was performed by software installed in the apparatus. For the measurement of the surface roughness Ra, a method using an atomic force microscope (AFM) is also generally used. The surface of a certain range is measured, and the surface roughness Ra in that region is calculated. For example, an SPI 3800 manufactured by Seiko Electronics Co., Ltd. is used, a surface image in the range of 10 um * 10 um is measured by the DFM mode, and the overall average surface roughness Ra is calculated by software installed in the apparatus. The porous silica film described in the present invention shows a very smooth surface in this method as well.
[0021]
The pores of the porous silica film of the present invention are preferably continuous communication holes. The detailed hole structure is not particularly limited, and may be a tunnel shape or a connecting hole in which independent holes are connected. In terms of the homogeneity and mechanical strength of the porous silica film, a connecting hole in which independent pores are connected is preferable. Such a vacancy state is confirmed by the transmission electron microscope (TEM) or the scanning electron microscope (SEM) described above. In the case of the connecting holes, the average hole diameter is defined as an average value of their widths.
[0022]
According to the present invention, a porous silica film having excellent mechanical strength can be provided.
Furthermore, the porous silica film of the present invention preferably has a thickness of 50 to 2000 nm from the viewpoint of environmental stability in the above-mentioned applications. More preferably, the film thickness is 50 to 1000 nm, still more preferably 80 to 850 nm, and most preferably 200 to 700 nm. When the film thickness is smaller than 50 nm, the uneven surface composed of silica secondary particles appears, so that the surface smoothness of the porous silica film is impaired, and when the film thickness is larger than 2000 nm, the film is slightly wavy due to the three-dimensional network structure of silica. Similarly, the surface smoothness is impaired. The measurement was performed using a stylus type step, surface roughness, and fine shape measuring device (manufactured by KLA-Tencor Corporation: P-15), and the measurement conditions were a stylus force (tactile pressure) 0.2 mg and a scanning speed of 10 um / sec. .
[0023]
The laminate for achieving the above object can take a form characterized by having the above-described porous silica film of the present invention on a substrate. For example, in a semiconductor material application, it can be laminated on a semiconductor substrate. As a typical semiconductor substrate, there is a transparent conductive film, and a composite oxide thin film such as indium oxide added with tin or zinc oxide added with aluminum is preferable. In addition, a semiconductor such as silicon or germanium, a compound semiconductor such as gallium-arsenic or indium-antimony, a substrate such as ceramics or metal can be used, and a thin film of another material is formed on the surface thereof. Can also be used. Thin films in this case include aluminum, titanium, chromium, nickel, copper, silver, platinum, tantalum, tungsten, osmium, gold, and other metals, as well as polycrystalline silicon, alumina, titania, zirconia, silicon nitride, titanium nitride A thin film made of tantalum nitride, boron nitride, amorphous carbon, or fluorinated amorphous carbon may be used.
[0024]
In the optical material application, the substrate is preferably transparent, and more preferably has a refractive index of 1.15 to 2.2. This refractive index is an average refractive index in the entire depth direction determined by measurement with an ellipsometer based on ASTM D-542, and is represented by a value with respect to the sodium D line (589.3 nm) at 23 ° C. As the substrate having such a refractive index, a transparent substrate made of a general-purpose material can be used. For example, various shot glasses such as silicon dioxide, BK7, SF11, LaSFN9, BaK1, F2, etc., fluorinated glass, phosphorous glass, boron-phosphorus glass, borosilicate glass, synthetic fused silica glass, optical crown glass, low expansion borosilicate Glass such as glass, sapphire, soda glass, alkali-free glass, acrylic resin such as polymethyl methacrylate and crosslinked acrylate, aromatic polycarbonate resin such as bisphenol A polycarbonate, styrene resin such as polystyrene, amorphous polyolefin such as polycycloolefin Examples thereof include synthetic resins such as resins and epoxy resins.
[0025]
Of these, shot glass such as BK7 and BaK1, synthetic fused silica glass, optical crown glass, low expansion borosilicate glass, soda glass, alkali-free glass, acrylic resin, aromatic polycarbonate resin, and amorphous polyolefin resin are preferable. BK7 shot glass, synthetic fused silica glass, optical crown glass, low expansion borosilicate glass, soda glass, alkali-free glass, acrylic resin, and aromatic polycarbonate resin are most preferred. In addition, it can be laminated on an inorganic compound such as silsesquioxane hydroxide, methyl silsesquioxane, or porous silica.
[0026]
Although there is no restriction | limiting in particular in the thickness of a board | substrate, in an optical use, it is 0.1-10 mm normally. The lower limit of the substrate thickness is preferably 0.2 mm, more preferably 0.3 mm, from the viewpoint of mechanical strength and gas barrier properties. On the other hand, the upper limit value of the thickness of the substrate is preferably 5 mm, more preferably 3 mm, from the viewpoint of lightness and light transmittance.
[0027]
In addition, when the porous silica film of the present invention is developed on a substrate, the properties of the substrate surface may influence the properties of the produced film. Therefore, in addition to cleaning the substrate surface, in some cases, it is necessary to control the adsorption site on the substrate surface, and surface treatment may be performed. As a chemical method for substrate cleaning, immersion in acids such as hydrofluoric acid, sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, alkanes such as aqueous sodium hydroxide, hydrogen peroxide and concentrated sulfuric acid, hydrochloric acid, ammonia, etc. Examples of physical methods include heat treatment in vacuum, ion sputtering, UV ozone treatment, and the like. In the surface treatment, heating and immersion in strong acids such as concentrated sulfuric acid, hydrochloric acid and nitric acid can be mentioned. Further, for a substrate having poor adhesion to the porous silica film, there is a method of adding an adsorption layer with a surfactant, a polymer electrolyte or the like. In particular, when a silicon substrate or a transparent glass substrate is used in terms of adhesion and productivity of the porous silica film of the present invention, cleaning with acids such as sulfuric acid and nitric acid and surface treatment are more preferable.
[0028]
The porous silica membrane of the present invention is composed of silicon oxide (SiO ₂ ) The composition is mainly used. The porous silica film has a SiOx composition (provided that a silicon atom-carbon atom bond exists in a part of the silica composition by, for example, copolymerizing organic silanes in silica synthesis by a sol-gel method). , X is a positive number greater than 0 and less than 2.
[0029]
The porous silica film of the present invention may contain any chemical composition containing a positive element (may be abbreviated as additional composition). For example, yttrium oxide, lanthanum oxide, cerium oxide, praseodymium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, titanium oxide, zirconium oxide, chromium oxide, manganese oxide, Transition metal oxide compositions such as iron oxide, cobalt oxide, nickel oxide, copper oxide, zinc oxide, cadmium oxide, gallium oxide, indium oxide, germanium oxide, tin oxide, lead oxide; lithium oxide, sodium oxide, potassium oxide, oxide Alkali metal oxide compositions such as rubidium and cesium oxide; alkaline earth metal compositions such as magnesium oxide, calcium oxide, strontium oxide and barium oxide; boron oxide composition; aluminum oxide composition; It can be. In addition, known inorganic glass compositions such as a chalcogenide glass composition and a fluoride glass composition, and metal nanoparticles such as gold, silver, and copper can also be exemplified.
[0030]
The silicon oxide composition constituting the porous silica film is contained in such a ratio that the ratio of silicon to all positive elements including silicon is 50 to 100 mol%. When the silicon content is less than 50 mol%, the surface roughness of the porous silica film is extremely deteriorated, and the mechanical strength may be lowered. A preferable lower limit is 70 mol%, more preferably 80 mol%, and most preferably 90 mol%. A higher silica content results in a porous silica film having better surface smoothness.
[0031]
The porous silica film and the laminate having the same in the present invention are characterized by the above-described pore characteristics and surface smoothness, and the production method thereof is not particularly limited, but the laminate of the present invention can be efficiently and produced. An example of a method excellent in properties will be described in detail below.
[0032]
(Method for producing porous silica film and laminate)
The porous silica film is formed by the following process. (B) a step of preparing a raw material liquid for forming a porous silica film, (b) a step of forming a primary film from the raw material liquid, and (c) an intermediate film is formed by increasing the molecular weight of the formed primary film. (D) a step of drying the porous silica membrane. Hereinafter, each step will be described.
[0033]
(A) preparing a raw material liquid for forming a porous silica film;
The raw material liquid for forming the porous silica film is a hydrous organic solution containing a raw material compound that is mainly composed of alkoxysilanes and can be increased in molecular weight by hydrolysis reaction and dehydration condensation reaction. However, since the conventional manufacturing method cannot solve the problem of surface irregularities in the porous silica film, it is necessary to control the sol-gel reaction that occurs during coating in order to control the surface smoothness. This reaction consists of two elementary reactions, a hydrolysis reaction of alkoxysilanes, and a dehydration condensation reaction between silanol groups generated by the hydrolysis reaction. The problem is that when the raw material liquid is applied onto the substrate, a rapid dehydration condensation reaction occurs due to the volatilization of the solvent on the film surface, resulting in surface irregularities. In order to obtain a smooth surface, it is important to relax the reaction.
[0034]
The water-containing organic solution that is the raw material liquid for forming the porous silica film of the present invention controls the sol-gel reaction that occurs during coating in addition to alkoxysilanes, organic solvents, water, and a catalyst that is added as necessary. It contains a very small amount of acids.
[0035]
Examples of alkoxysilanes include tetramethoxysilane, tetraethoxysilane, tetra (n-propoxy) silane, tetraisopropoxysilane, tetra (n-butoxy) silane, and the like, trimethoxysilane, triethoxysilane, and methyl. Trialkoxysilanes such as trimethoxysilane, methyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, dialkoxysilanes such as dimethyldimethoxysilane, dimethyldiethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, bis (Trimethoxysilyl) methane, bis (triethoxysilyl) methane, 1,2-bis (trimethoxysilyl) ethane, 1,2-bis (triethoxysilyl) ethane, 1,4-bis (tri Toxylsilyl) benzene, 1,4-bis (triethoxysilyl) benzene, 1,3,5-tris (trimethoxysilyl) benzene and the like, in which two or more trialkoxysilyl groups are bonded, 3- Aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3v glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-acryloyloxypropyltrimethoxysilane, 3 -The thing which the alkyl group substituted by silicon atoms, such as carboxypropyl trimethoxysilane, has a reactive functional group is mentioned, Furthermore, these partial hydrolysates and oligomers may be sufficient.
[0036]
Among these, tetramethoxysilane, tetraethoxysilane, trimethoxysilane, triethoxysilane, tetramethoxysilane, or tetraethoxysilane oligomer is particularly preferable. In particular, tetramethoxysilane oligomers are most preferably used because of their reactivity and controllability of gelation.
[0037]
Furthermore, monoalkoxysilanes having 2 to 3 hydrogen, alkyl groups, or aryl groups on silicon atoms can be mixed with the alkoxysilanes. By mixing monoalkoxysilanes, the resulting porous silica membrane can be hydrophobized to improve water resistance. Examples of monoalkoxysilanes include triethylmethoxysilane, triethylethoxysilane, tripropylmethoxysilane, triphenylmethoxysilane, triphenylethoxysilane, diphenylmethylmethoxysilane, diphenylmethylethoxysilane, and the like. The mixing amount of monoalkoxysilanes is desirably 70 mol% or less of the total alkoxysilanes. If the mixing amount exceeds 70 mol%, ideal gelation may not occur.
[0038]
Further, fluorinated alkyls such as (3,3,3-trifluoropropyl) trimethoxysilane, (3,3,3-trifluoropropyl) triethoxysilane, pentafluorophenyltrimethoxysilane, pentafluorophenyltriethoxysilane When an alkoxysilane having a group or a fluorinated aryl group is used in combination, excellent water resistance, moisture resistance, stain resistance and the like may be obtained.
[0039]
The shape of the oligomer in the raw material liquid is not particularly limited, and examples thereof include linear, cross-linked, cage-type molecules (silsesquioxane, etc.) and the like. In view of reactivity control at the time of coating, those having linear as the main component are preferable.
In addition, when applying the above-described raw material liquid, it is necessary that a certain degree of high molecular weight (that is, a state in which condensation has progressed to some extent) has already been achieved. It is preferable that high molecular weight is achieved to such an extent that insoluble matter cannot be formed. The reason for this is that if there are visible insolubles in the raw material solution before coating, large surface irregularities are formed and the film quality is deteriorated.
[0040]
As the organic solvent, those having the ability to mix alkoxysilanes constituting the raw material liquid, water, and a hydrophilic organic compound having a high boiling point described later are preferably used. Usable organic solvents include alcohols such as monohydric alcohols having 1 to 4 carbon atoms, dihydric alcohols having 1 to 4 carbon atoms, polyhydric alcohols such as glycerin and pentaerythritol; diethylene glycol, ethylene glycol monomethyl ether, ethylene Glycol dimethyl ether, 2-ethoxyethanol, propylene glycol monomethyl ether, propylene glycol methyl ether acetate and the like, ethers or esterified products of the above alcohols; ketones such as acetone and methyl ethyl ketone; formamide, N-methylformamide, N-ethylformamide, N , N-dimethylformamide, N, N-diethylformamide, N-methylacetamide, N-ethylacetamide, N, N-dimethylacetamide, N, N-di Tylacetamide, N-methylpyrrolidone, N-formylmorpholine, N-acetylmorpholine, N-formylpiperidine, N-acetylpiperidine, N-formylpyrrolidine, N-acetylpyrrolidine, N, N′-diformylpiperazine, N, N Amides such as' -diformylpiperazine and N, N'-diacetylpiperazine; Lactones such as γ-butyrolactone; Ureas such as tetramethylurea and N, N'-dimethylimidazolidine; Dimethylsulfoxide and the like . These water-soluble organic solvents may be used alone or as a mixture. Among these, preferable organic solvents in terms of film-forming properties (particularly volatile) on the substrate include acetone, methyl ethyl ketone, monohydric alcohols having 1 to 4 carbon atoms, and the like. Among these, methanol, ethanol, n-propanol, isopropyl alcohol, and acetone are more preferable, and methanol or ethanol is most preferable.
[0041]
In order to form the porous structure of the present invention, a high-boiling hydrophilic organic compound may be contained in addition to the organic solvent described above. A high-boiling hydrophilic organic compound is an organic compound having a hydrophilic functional group such as a hydroxyl group, a carbonyl group, an ether bond, an ester bond, a carbonate bond, a carboxyl group, an amide bond, a urethane bond, or a urea bond in the molecular structure. That is. The hydrophilic organic compound may have a plurality of these hydrophilic functional groups in the molecular structure. The boiling point here is a boiling point under a pressure of 760 mmHg. The boiling point is preferably 80 ° C. or higher, and when a hydrophilic organic compound having a boiling point of less than 80 ° C. is used, the porosity of the porous silica film may be extremely reduced. Preferable examples of the hydrophilic organic compound having a boiling point of 80 ° C. or higher include alcohols having 3 to 8 carbon atoms, polyhydric alcohols having 2 to 6 carbon atoms, and phenols. More preferred hydrophilic organic compounds include alcohols having 3 to 8 carbon atoms, diols having 2 to 8 carbon atoms, triols having 3 to 8 carbon atoms, and tetraols having 4 to 8 carbon atoms. More preferable hydrophilic organic compounds include alcohols having 4 to 7 carbon atoms such as n-butanol, isobutyl alcohol, t-butyl alcohol, n-pentanol, cyclopentanol, n-hexanol, cyclohexanol, benzyl alcohol, C2-C4 diols such as ethylene glycol, propylene glycol, 1,4-butanediol, C3-C6 triols such as glycerol and trishydroxymethylethane, C4 such as erythritol and pentaerythritol -5 tetraols. In this hydrophilic organic compound, if the number of carbon atoms is too large, the hydrophilicity may decrease too much.
[0042]
A catalyst is mix | blended as needed. Examples of the catalyst include substances that promote the hydrolysis and dehydration condensation reactions of the alkoxysilanes described above. Specific examples include acids such as hydrochloric acid, nitric acid, sulfuric acid, formic acid, acetic acid, oxalic acid and maleic acid; amines such as ammonia, butylamine, dibutylamine and triethylamine; bases such as pyridine; Lewis such as acetylacetone complex of aluminum Acids; and the like.
[0043]
Examples of the metal species of the metal chelate compound used as the catalyst include titanium, aluminum, zirconium, tin, and antimony. Specific examples of the metal chelate compound include the following.
[0044]
Examples of aluminum complexes include di-ethoxy mono (acetylacetonato) aluminum, di-n-propoxy mono (acetylacetonato) aluminum, di-isopropoxy mono (acetylacetonato) aluminum, di-n-butoxy. Mono (acetylacetonato) aluminum, di-sec-butoxy mono (acetylacetonato) aluminum, di-tert-butoxy mono (acetylacetonato) aluminum, monoethoxy bis (acetylacetonato) aluminum, mono-n -Propoxy bis (acetylacetonato) aluminum, monoisopropoxy bis (acetylacetonato) aluminum, mono-n-butoxy bis (acetylacetonato) aluminum, mono-sec-butoxy bi (Acetylacetonato) aluminum, mono-tert-butoxy bis (acetylacetonato) aluminum, tris (acetylacetonato) aluminum, diethoxy mono (ethylacetoacetate) aluminum, di-n-propoxy mono (ethylacetoacetate) ) Aluminum, diisopropoxy mono (ethyl acetoacetate) aluminum, di-n-butoxy mono (ethyl acetoacetate) aluminum, di-sec-butoxy mono (ethyl acetoacetate) aluminum, di-tert-butoxy mono (Ethyl acetoacetate) aluminum, monoethoxy bis (ethyl acetoacetate) aluminum, mono-n-propoxy bis (ethyl acetoacetate) aluminum, monoisoprop Xy-bis (ethyl acetoacetate) aluminum, mono-n-butoxy bis (ethyl acetoacetate) aluminum, mono-sec-butoxy bis (ethyl acetoacetate) aluminum, mono-tert-butoxy bis (ethyl acetoacetate) Examples thereof include aluminum chelate compounds such as aluminum and tris (ethylacetoacetate) aluminum.
[0045]
Titanium complexes include triethoxy mono (acetylacetonato) titanium, tri-n-propoxy mono (acetylacetonato) titanium, triisopropoxy mono (acetylacetonato) titanium, tri-n-butoxy mono (acetyl). Acetonato) titanium, tri-sec-butoxy mono (acetylacetonato) titanium, tri-tert-butoxy mono (acetylacetonato) titanium, diethoxy bis (acetylacetonato) titanium, di-n-propoxy bis (Acetylacetonato) titanium, diisopropoxy bis (acetylacetonato) titanium, di-n-butoxy bis (acetylacetonato) titanium, di-sec-butoxy bis (acetylacetonato) titanium, di-tert -Butoxy bis (ace Ruacetonate) titanium, monoethoxy tris (acetylacetonato) titanium, mono-n-propoxy tris (acetylacetonato) titanium, monoisopropoxy tris (acetylacetonato) titanium, mono-n-butoxy tris (acetyl) Acetonato) titanium, mono-sec-butoxy-tris (acetylacetonato) titanium, mono-tert-butoxy-tris (acetylacetonato) titanium, tetrakis (acetylacetonato) titanium, triethoxy mono (ethylacetoacetate) titanium , Tri-n-propoxy mono (ethyl acetoacetate) titanium, triisopropoxy mono (ethyl acetoacetate) titanium, tri-n-butoxy mono (ethyl acetoacetate) titanium, tri-sec-butyl Xy mono (ethyl acetoacetate) titanium, tri-tert-butoxy mono (ethyl acetoacetate) titanium, diethoxy bis (ethyl acetoacetate) titanium, di-n-propoxy bis (ethyl acetoacetate) titanium, diiso Propoxy bis (ethyl acetoacetate) titanium, di-n-butoxy bis (ethyl acetoacetate) titanium, di-sec-butoxy bis (ethyl acetoacetate) titanium, di-tert-butoxy bis (ethyl acetoacetate) Titanium, monoethoxy tris (ethyl acetoacetate) titanium, mono-n-propoxy tris (ethyl acetoacetate) titanium, monoisopropoxy tris (ethyl acetoacetate) titanium, mono-n-butoxy tris (ethyl acetoacetate) Acetate) titanium, mono-sec-butoxy tris (ethyl acetoacetate) titanium, mono-tert-butoxy tris (ethyl acetoacetate) titanium, tetrakis (ethyl acetoacetate) titanium, mono (acetylacetonate) tris (ethyl aceto) Acetate) titanium, bis (acetylacetonato) bis (ethylacetoacetate) titanium, tris (acetylacetonato) mono (ethylacetoacetate) titanium and the like.
[0046]
In addition to these catalysts, weak alkaline compounds such as basic catalysts such as ammonia may be used. In this case, it is preferable to appropriately adjust the silica concentration, the organic solvent species, and the like. Moreover, when preparing a water-containing organic solution, it is preferable not to increase the catalyst concentration in a solution rapidly. Specific examples include a method of mixing alkoxysilanes and a part of an organic solvent, then mixing water, and finally mixing the remaining organic solvent and base.
[0047]
The addition amount of the catalyst is usually 0.001-1 mol, preferably 0.01-0.1 mol, with respect to 1 mol of alkoxysilanes. When the addition amount of the catalyst exceeds 1 mol, a precipitate composed of coarse gel particles is generated, the smoothness of the surface is impaired, and a uniform porous silica film may not be obtained.
[0048]
In order to obtain the excellent surface smoothness characteristic of the porous silica film of the present invention, it is necessary to contain a trace amount of acids in the raw material liquid. This requires the addition of a substance different from the above catalyst, and has the effect of controlling the condensation reaction during coating. When the raw material liquid is applied on the substrate, a rapid dehydration condensation reaction occurs due to the volatilization of the solvent on the film surface. To suppress this, a gentle condensation reaction is promoted by keeping the vicinity of the film surface near weak acidity. Excellent surface smoothness can be achieved. The trace amount is preferably 10 mmol or less with respect to 1 mol of alkoxysilanes. More preferably, it is 5 mmol or less, and most preferably 1 mmol or less. If it is larger than 10 mmol, the dehydration condensation reaction at the time of preparing the raw material liquid may be suppressed, and the porosity may not increase. On the other hand, if it is less than 0.001 mmol, the effects as described above cannot be obtained, and a smooth surface may not be obtained. Specifically, there are acids such as hydrochloric acid, nitric acid, sulfuric acid, formic acid, acetic acid, oxalic acid and maleic acid. In order to proceed an ideal dehydration condensation reaction in the vicinity of the membrane surface, hydrochloric acid and acetic acid having high volatility are preferable, and hydrochloric acid is more preferable.
[0049]
The order of addition in the aforementioned acids is not particularly limited. However, the more the acid to be added is incorporated in the three-dimensional network structure of silica in the raw material liquid, the more the above-described dehydration condensation reaction is suppressed. Can do. Therefore, it is preferable to add water, more preferably to add water and a catalyst, and most preferably to add directly to alkoxysilanes before adding water, catalyst and organic solvent.
[0050]
The raw material liquid for forming the porous silica film of the present invention is formed by blending the above-mentioned raw materials. The blending ratio of the alkoxysilanes is preferably 10 to 60% by weight and more preferably 20 to 40% by weight with respect to the whole raw material liquid. When the blending ratio of alkoxysilanes exceeds 60% by weight, it is difficult to maintain the stability of the raw material liquid, and the porous silica film may be broken during film formation. On the other hand, when the compounding ratio of alkoxysilanes is less than 10% by weight, the hydrolysis reaction and the dehydration condensation reaction are extremely slow, and the film formability may be deteriorated (film unevenness).
[0051]
Water is necessary for hydrolysis of alkoxysilanes, and is important from the viewpoint of improving the film forming property of the target porous silica film. Therefore, when the preferable amount of water is defined by the molar ratio with respect to the amount of alkoxy groups, the amount is 0.1 to 1.6 mol times, especially 0.3 to 1.2 mol times the amount of 1 mol of alkoxy groups in alkoxysilane. In particular, the amount is preferably 0.5 to 0.7 mole times.
[0052]
Water may be added at any time after the alkoxysilanes are dissolved in an organic solvent, but it is desirable to add water after sufficiently dispersing the alkoxysilanes, catalyst and other additives in the solvent. Most preferred. Although a hydrolysis reaction is caused by adding water, it can be added as an aqueous alcohol solution or as water vapor without being particularly limited. In addition, if water is added rapidly, depending on the type of alkoxysilane, the hydrolysis reaction and the dehydration condensation reaction occur too quickly, and precipitation may occur. Therefore, in order to prevent such precipitation, take sufficient time to add water, make the alcohol solvent coexist in a state where water is added uniformly, and add water at a low temperature. It is preferable to use means such as inhibiting the reaction alone or in combination.
[0053]
The purity of the water to be used may be one that has undergone either or both of ion exchange and distillation. When the porous silica film of the present invention is used in an application field that particularly dislikes minute impurities such as semiconductor materials and optical materials, a porous silica film with a higher purity is required, and thus distilled water is further ion-exchanged. It is desirable to use ultrapure water. In this case, for example, water passed through a filter having a pore size of 0.01 to 0.5 μm may be used.
[0054]
When a hydrophilic organic compound having a boiling point of 80 ° C. or higher is used in the water-containing organic solution, the content of the hydrophilic organic compound having a boiling point of 80 ° C. or higher is equal to the total content of the organic solvent and the hydrophilic organic compound having a boiling point of 80 ° C. or higher. On the other hand, it is important that the amount is not more than a specific amount. The content of the hydrophilic organic compound having a boiling point of 80 ° C. or higher with respect to the total content is 90% by weight or less, preferably 85% by weight or less.
[0055]
If the blending ratio of the hydrophilic organic compound having a boiling point of 80 ° C. or higher is too small, the porosity of the porous silica film becomes extremely small, and it may be difficult to achieve a low refractive index of the porous silica film. In general, the total content of the organic solvent and the hydrophilic organic compound having a boiling point of 80 ° C. or higher is preferably 30% by weight or more, more preferably 50% by weight or more, and particularly preferably 60% by weight or more. On the other hand, when the blending ratio of the hydrophilic organic compound exceeds 90% by weight of the total content, the coating film may become cloudy during the film formation or the porous silica film may be broken. Therefore, the content of the hydrophilic organic compound having a boiling point of 80 ° C. or higher in the water-containing organic solution is 30% to 90% by weight, particularly 50% to 85% by weight, particularly 60% to 85% by weight of the total content. % Or less is preferable.
[0056]
The atmospheric temperature in the preparation of the raw material liquid and the mixing order are arbitrary, but in order to obtain a uniform structure formation in the raw material liquid, water is preferably mixed last. Moreover, in order to suppress extreme hydrolysis and dehydration condensation reaction of alkoxysilanes in the raw material liquid, the raw material liquid is adjusted at a temperature range of 0 to 60 ° C., particularly 15 to 40 ° C., particularly 15 to 30 ° C. Preferably it is done.
At the time of liquid preparation, the stirring operation of the raw material liquid is arbitrary, but it is more preferable to stir with a stirrer for each mixing.
[0057]
Furthermore, after the raw material solution is adjusted, the alkoxysilanes are preferably hydrolyzed and the dehydration condensation reaction proceeds, so that the solution is preferably aged. During this ripening period, it is preferable that the hydrolyzed condensate of the alkoxysilanes to be produced is in a state of being more uniformly dispersed in the raw material liquid, so that the liquid is preferably stirred.
[0058]
The temperature during the aging period is arbitrary, and in general, it may be heated at room temperature or continuously or intermittently. Among them, it is preferable to perform rapid heat aging in order to form a three-dimensional network structure by the hydrolysis condensate of silicon alkoxide. Further, when heat aging is performed, heat aging immediately after the preparation of the raw material solution is preferable, and within 15 days after the preparation of the raw material solution, more preferably within 12 days, particularly within 3 days, and particularly within 1 day, it is preferable to start the heat aging.
[0059]
Specifically, accelerated aging at 40 to 70 ° C. for 1 to 5 hours is preferable, and in this case, stirring is preferably performed in order to obtain a uniform porous structure. In particular, accelerated aging for 2 to 3 hours at a temperature in the vicinity of 60 ° C. is preferable from the viewpoint of porosity.
[0060]
(B) forming a primary film from the raw material liquid;
The primary film is formed by applying a water-containing organic solution, which is a raw material liquid, on a substrate. Examples of the substrate include semiconductors such as silicon and germanium, compound semiconductors such as gallium-arsenic and indium-antimony, substrates such as ceramics and metals, and transparent substrates such as glass substrates and synthetic resin substrates. In some cases, the substrate needs to be surface treated.
[0061]
Examples of means for applying the raw material liquid include a casting method in which the raw material liquid is extended onto the substrate using a bar coater, an applicator or a doctor blade, a dip method in which the substrate is immersed in the raw material liquid, and a spin coating method. Well known. Of these means, the casting method and the spin coating method are preferably employed because the raw material liquid can be uniformly applied.
[0062]
When the raw material liquid is applied by the casting method, the casting speed is 0.1 to 1000 m / min, preferably 0.5 to 700 m / min, and more preferably 1 to 500 m / min. The rotation speed in the place where the raw material liquid is applied and formed by the spin coating method is 10 to 100,000 rotations / minute, preferably 50 to 50,000 rotations / minute, and more preferably 100 to 10,000 rotations / minute.
[0063]
In the dip coating method, the substrate may be dipped in the raw material solution and pulled up at an arbitrary speed. The pulling speed at this time is preferably 0.01 to 50 mm / sec, more preferably 0.05 to 30 mm / sec, and particularly preferably 0.1 to 20 mm / sec. Although there is no restriction | limiting in the speed | rate which immerses a board | substrate in a raw material liquid, It may be preferable to immerse a board | substrate in a raw material liquid at a speed | rate comparable as a raising speed | rate. The substrate may be immersed for a suitable time until the substrate is immersed in the raw material solution and pulled up, and this duration is usually 1 second to 48 hours, preferably 3 seconds to 24 hours, more preferably 5 seconds to 12 hours. It's time.
[0064]
The atmosphere during coating may be air or an inert gas such as nitrogen or argon, and the temperature is usually 0 to 60 ° C., preferably 10 to 50 ° C., more preferably 20 to 40 ° C. The humidity is usually 5 to 90%, preferably 10 to 80%, more preferably 15 to 70%. Since the dip coating method has a lower drying speed than the spin coating method, there is a tendency to form a stable film with less distortion by the sol-gel reaction after coating. However, a stable film can be formed by adding a small amount of acids found in the method for producing a porous silica film of the present invention.
The film forming temperature is 0 to 100 ° C., preferably 10 to 80 ° C., more preferably 20 to 70 ° C.
[0065]
(C) a step in which the formed primary film is polymerized to form an intermediate film;
When the raw material liquid is applied onto the substrate, the molecular weight is increased by a sol-gel reaction, and an intermediate film is formed. However, a rapid dehydration condensation reaction occurs due to the volatilization of the solvent on the film surface, resulting in surface irregularities. In order to obtain a smooth surface, it is important to relax the reaction.
[0066]
As the hydrolytic condensation reaction of alkoxysilanes by the sol-gel reaction proceeds, the condensation product of alkoxysilanes gradually increases in molecular weight. In the hydrolysis-condensation reaction, phase separation that may be caused by a change in phase equilibrium may occur. In the present invention, the composition of the raw material liquid, the alkoxysilanes used, and the hydrophilic organic compound having a boiling point of 80 ° C. or higher The phase separation is controlled to occur on the nanometer scale in consideration of the hydrophilicity of the liquid crystal. As a result, the separated phase of the hydrophilic organic compound is formed on the substrate while being retained in the three-dimensional network structure of the alkoxysilane condensate, and constitutes an intermediate film. At the same time, it is impregnated with acids, and the surface smoothness is expressed by relaxing the dehydration condensation reaction during solvent drying.
[0067]
In forming the intermediate film, for example, by pre-drying the coating film applied on the substrate, the solvent concentration in the thin film can be reduced and a partial condensation reaction of silica can be performed. As a result, the three-dimensional network structure in the film is fixed and promoted to be stabilized, and more smooth surface is obtained.
[0068]
The pre-drying temperature of the intermediate film is usually 0 to 60 ° C., preferably 10 to 50 ° C., more preferably 20 to 40 ° C., and the relative humidity of the atmosphere is usually 5 to 95%, preferably 10 to 90%, More preferably, it is 15 to 80%, and most preferably 25 to 60%. The predrying time is usually 30 seconds to 60 minutes, preferably 1 to 30 minutes.
[0069]
In order to form a good porous structure in the porous silica film of the present invention, a water-soluble organic solvent may be brought into contact with the intermediate film. By bringing a water-soluble organic solvent into contact with the intermediate film, the hydrophilic organic compound in the intermediate film is extracted and removed, and water in the intermediate film is removed. The water present in the intermediate film is not only dissolved in the organic solvent but also adsorbed on the inner wall of the film constituent material. Therefore, in order to effectively remove the water in the intermediate film, the organic solvent Control the water content in it. Therefore, the content of water in the organic solvent is 0 to 10% by weight, preferably 0 to 5% by weight, and more preferably 0 to 3% by weight. If the dehydration is not sufficiently performed, the pores may collapse and disappear or become smaller in the subsequent heating or drying process of the film.
[0070]
As the means for extracting and removing the hydrophilic organic compound in the intermediate film, for example, immersing the intermediate film in a water-soluble organic solvent, washing the surface of the intermediate film with a water-soluble organic solvent, Examples thereof include spraying a water-soluble organic solvent on the surface and spraying water-soluble organic solvent vapor on the surface of the intermediate film. Of these, dipping means and cleaning means are preferred. Although the contact time between the intermediate film and the water-soluble organic solvent can be set in the range of 1 second to 24 hours, the upper limit of the contact time is preferably 12 hours and more preferably 6 hours from the viewpoint of productivity. On the other hand, the lower limit of the contact time is preferably 10 seconds and more preferably 30 seconds because the hydrophilic organic compound having a boiling point of 80 ° C. or higher and water must be sufficiently removed.
[0071]
As the contact treatment liquid, polar solvents are preferable, and among them, monohydric alcohols, polyhydric alcohols, ketones, ethers, esters, amides, or two or more hydrophilic solvents are preferable. When combining two or more kinds of hydrophilic solvents, they may be used in combination or may be combined by treating each solvent alone. Furthermore, the same kind of contact treatment liquid can be repeatedly acted on.
[0072]
In addition, before this extraction process, after the extraction process, or simultaneously with the extraction process, the intermediate film can be brought into contact with acids or bases. By carrying out like this, the hydrolysis condensation reaction of alkoxysilanes in the surface layer of an intermediate body film | membrane can be accelerated | stimulated. As a result, the surface layer of the intermediate film is preferable because it has high hardness. Preferable acids to be contacted include acids that are easily vaporized such as hydrogen chloride, formic acid, acetic acid, and trifluoroacetic acid. Preferred bases include ammonia, methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, n-propylamine, isopropylamine, n-butylamine, cyclopentylamine, cyclohexylamine, and the like. 6 or less monoamines may be mentioned.
[0073]
As a method for bringing the intermediate film into contact with acids or bases, liquids or solutions or vapors of acids or bases are used. Moreover, acids or bases can be dissolved in the above-mentioned water-soluble organic solvent used in the extraction step, and contacted simultaneously with the extraction step.
[0074]
(D) a step of drying the porous silica membrane;
The drying step is performed for the purpose of removing volatile components remaining in the porous silica membrane and / or for the purpose of promoting the hydrolysis condensation reaction of alkoxysilanes. The drying temperature is 20 to 500 ° C., preferably 30 to 400 ° C., more preferably 50 to 350 ° C., and the drying time is 1 minute to 50 hours, preferably 3 minutes to 30 hours, more preferably 5 minutes to 15 hours.
[0075]
The drying method can be performed by a known method such as blow drying or drying under reduced pressure, and may be combined. After the blast drying, vacuum drying for the purpose of sufficiently removing volatile components can be added.
[0076]
In the post-drying, drying may be performed under any of pressure, reduced pressure, and normal pressure. The drying temperature is preferably dried at a temperature lower than the temperature at which the silica skeleton derived from the silica hydrogel part in the three-dimensional network structure generated in the pre-drying is denatured, generally 0 to 100 ° C, more preferably 10 to 70 ° C. 15-50 degreeC is especially preferable, and drying time is 30 second-60 minutes normally, Preferably it is 1 minute-30 minutes.
[0077]
The purpose of high-temperature drying is to remove unnecessary solvents and additives in the porous silica membrane and to cure the membrane. For example, an oven furnace, a vacuum dryer, a hot plate, or the like can be used for the heat drying. The drying time is usually 10 seconds to 48 hours, preferably 30 seconds to 24 hours, more preferably 1 minute to 12 hours, and the drying temperature is usually 100 to 370 ° C, preferably 130 to 350 ° C, more preferably. 150-320 ° C. High temperature drying may be performed under any of pressure, reduced pressure, and normal pressure.
[0078]
By treating the obtained porous silica film with a silylating agent, it is possible to make the surface more functional. By treating with a silylating agent, hydrophobicity is imparted to the porous silica film, and the pores can be prevented from being contaminated by impurities such as alkaline water. Examples of the silylating agent include trimethylmethoxysilane, trimethylethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, dimethylethoxysilane, methyldiethoxysilane, dimethylvinylmethoxysilane, and dimethyl. Alkoxysilanes such as vinylethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, trimethylchlorosilane, dimethyldichlorosilane, methyltrichlorosilane, methyldichlorosilane, dimethylchlorosolane, dimethylvinylchlorosilane , Methyl vinyl dichlorosilane, methyl chloro disilane, triphenyl chloro silane, methyl diphenyl chloro Chlorosilanes such as silane, diphenyldichlorosilane, hexamethyldisilazane, N, N′-bis (trimethylsilyl) urea, N-trimethylsilylacetamide, dimethyltrimethylsilylamine, diethyltriethylsilylamine, trimethylsilylimidazole and other silazanes, (3, 3,3-trifluoropropyl) trimethoxysilane, (3,3,3-trifluoropropyl) triethoxysilane, pentafluorophenyltrimethoxysilane, pentafluorophenyltriethoxysilane, etc. And alkoxysilanes having a group. Silylation is performed by applying a silylating agent to the porous silica film, immersing the porous silica film in the silylating agent, or exposing the porous silica film to the vapor of the silylating agent. Can do.
[0079]
【Example】
Hereinafter, the present invention will be described more specifically with reference to examples.
(Example 1)
Methyl methoxysilane oligomer (MKC silicate MS51 manufactured by Mitsubishi Chemical Corporation) contains 0.1-1.2 mmol of hydrochloric acid with respect to 1 mol of tetramethoxysilane, methanol n-butanol, weight of alkoxysilanes as catalyst A raw material solution was prepared by mixing 1% aluminum acetylacetonate complex and water in excess of the stoichiometric amount in the sol-gel reaction with stirring. Prior to the coating step, the raw material liquid was stirred for a certain time at a temperature not higher than the boiling point of the organic solvent.
[0080]
The above raw material liquid was spin-coated on an alkali-free glass substrate at a rotational speed of 3000 rotations / minute to form a primary film, which was roughly dried for a certain period of time to obtain an intermediate film.
The obtained intermediate film was immersed in methanol to remove moisture in the film. The taken-out membrane was dried in a drier kept at 150 ° C., and the reaction was terminated to obtain a porous silica membrane.
[0081]
The porous silica film thus obtained had a very small pore diameter and was 2.5 nm from the result of nitrogen adsorption. Moreover, it is a high quality porous structure with a porosity of 42% and a film thickness of 573 nm from the results of the spectroscopic ellipsometer, and the surface roughness Ra = 0.5 nm from the results of measurement of the stylus step, surface roughness and fine shape. It was also confirmed that the surface property was extremely smooth. Furthermore, it was found from the observation of the film cross section by SEM that the structure is a communication hole.
[0082]
【The invention's effect】
The porous silica film of the present invention is characterized by a porous silica film having a small pore diameter, a large porosity, and extremely excellent surface smoothness, and a laminate having the porous silica film.
The porous silica film has the effects of 1) transparency and 2) low reflectivity, so that it can be applied to semiconductor materials and optical materials. Furthermore, it is extremely important in the above-mentioned applications, and it has been difficult for conventional porous silica membrane materials, and due to the extremely smooth surface properties of the porous silica membrane, 3) easy lamination process, 4) antifouling property, and 5) chemical resistance. 6) The effect of high mechanical strength could also be obtained. This indicates that the porous silica membrane of the present invention is a very optimal material for the above application.
Furthermore, the porous silica film of the present invention can be easily chemically modified on the surface and the pore wall surface, and can be expected to expand the range of applications in the fields of catalyst materials and sensor materials.

Claims (6)

A porous silica film having a pore diameter of 0.5 to 100 nm, a porosity of 35% or more, and a surface roughness Ra = 10 nm or less. A porous silica film, wherein the pores are communication holes. A porous silica film having a thickness of 50 to 2000 nm A laminate comprising the porous silica film according to claim 1 or 2 on a substrate. The laminate according to claim 3, wherein the substrate is transparent. The laminate according to claim 3, wherein the substrate is a semiconductor substrate.