JP2004310079A - Positive photosensitive resin composition, and semiconductor device and display element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a positive photosensitive resin composition excellent in processability during dry etching. <P>SOLUTION: The positive photosensitive resin composition comprises 100 pts. wt. of an alkali-soluble resin, 1 to 50 pts. wt. of a photosensitive diazoquinone compound and 0.5 to 20 pts. wt. of a fluorine compound. The alkali-soluble resin is preferably a polyamide resin, and the polyamide resin preferably has the molecular end sealed with a compound containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group. The fluorine compound is a fluorine derivative of a compound containing a phenolic hydroxyl group. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a positive photosensitive resin composition, a semiconductor device, and a display element.

Conventionally, a polyimide resin having excellent heat resistance and excellent electrical and mechanical properties has been used for a surface protective film and an interlayer insulating film of a semiconductor element. There has been a demand for remarkable improvements in heat cycle resistance and heat shock resistance due to the thinning and miniaturization of packages and the shift to surface mounting by solder reflow, and further high-performance resins have been required.
On the other hand, a technique for imparting photosensitivity to the polyimide resin itself has recently attracted attention, and when this technique is used, a part of the pattern forming process can be simplified, which has the effect of shortening the process and improving the yield. Requires a solvent such as N-methyl-2-pyrrolidone, which is problematic in safety and handling.

Therefore, recently, a positive photosensitive resin that can be developed with an alkaline aqueous solution has been developed. For example, Patent Document 1 discloses a positive photosensitive resin composed of a polybenzoxazole precursor and a diazoquinone compound. It has high heat resistance, excellent electrical properties, and fine workability, and has the potential as a resin for interlayer insulation as well as for wafer coating.
Such a photosensitive resin has been widely used in recent years as a surface protective film or an interlayer insulating film of a semiconductor element. In particular, a positive-type photosensitive resin composed of a polybenzoxazole precursor and a diazoquinone compound having high resolution is used. In the case of a conductive resin, a method of performing dry etching via a positive photosensitive resin when processing an inorganic film formed on a wiring is applicable. However, when processing an inorganic film, the layer structure is generally complicated, and there is a phenomenon that a deposit which is a reaction product with a gas used at the time of etching remains, which causes a problem such as poor appearance. This deposit is generally called deposition, and it is difficult to remove the deposit. Therefore, a removal step by chemical treatment or the like is required.

Japanese Patent Publication No. Hei 1-46862 (pages 1 to 8)

  The present invention relates to a positive-type photosensitive resin composition and a semiconductor device having excellent processability during etching, and in particular, to dry etching without leaving deposition, particularly in the etching of an inorganic film coated with a heat-resistant polymer protective film. It is an object of the present invention to provide a processable positive photosensitive resin composition, a semiconductor device and a display element.

The present invention
[1] A positive photosensitive resin composition comprising 100 parts by weight of an alkali-soluble resin, 1 to 50 parts by weight of a photosensitive diazoquinone compound, and 0.5 to 20 parts by weight of a fluorine compound,
[2] The positive photosensitive resin composition according to [1], wherein the alkali-soluble resin is a polyamide resin,
[3] The positive photosensitive resin composition according to [2], wherein the alkali-soluble resin is a polyamide resin containing a polybenzoxazole precursor structure, a polyamic acid structure, or a polyamic acid ester structure, alone or in combination of two or more.
[4] The positive photosensitive resin composition according to [2] or [3], wherein the alkali-soluble resin is a polyamide resin having a structure represented by the general formula (1).

[5] The positive photosensitive resin composition according to [4], wherein X in the polyamide resin having the structure represented by the general formula (1) is selected from the group of the formula (2):

[6] The positive photosensitive material according to [4] or [5], wherein Y in the polyamide resin having the structure represented by the general formula (1) is selected from the group of the formulas (3) and (4). Resin composition,

[7] A polyamide resin having a structure represented by the general formula (1) is end-capped with a compound containing an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group [4] to [4]. 6] The positive photosensitive resin composition according to any one of the above,
[8] The positive photosensitive resin composition according to any one of [1] to [7], wherein the fluorine compound is a fluorine derivative of a compound containing a phenolic hydroxyl group.
[9] The positive photosensitive resin composition according to any one of [1] to [8], wherein the fluorine compound is a compound represented by the following formula (5):

[10] The positive photosensitive resin composition according to any one of [1] to [9] is applied on a semiconductor element such that the film thickness after heat dehydration and ring closure is 0.1 to 30 μm, and prebaked. Semiconductor device obtained by exposing, developing, heating,
[11] The positive photosensitive resin composition according to any one of [1] to [9] is coated on a display element substrate such that the film thickness after heat dehydration and ring closure is 0.1 to 30 μm. , Prebaking, exposing, developing, and heating.

  According to the present invention, a positive photosensitive resin composition having excellent workability during dry etching can be obtained.

  The alkali-soluble resin used in the present invention is a resin having a hydroxyl group, a carboxyl group, or a sulfonic acid group in a main chain or a side chain, and is a cresol-type novolak resin, polyhydroxystyrene, or a polyamide resin. Among these, a polyamide resin is preferred. The polyamide resin is a resin having a polybenzoxazole precursor structure, a polyamic acid structure or a polyamic acid ester structure and having a hydroxyl group, a carboxyl group, or a sulfonic acid group in a main chain or a side chain. Among these, a polyamide resin having a structure represented by the general formula (1) is preferable from the viewpoint of heat resistance after final heating. Further, a part of these resins may be closed to form a polybenzoxazole structure or a polyimide structure.

In the polyamide resin having a structure represented by the general formula (1) used in the present invention, X represents a divalent to tetravalent organic group, R ₁ is a hydroxyl group, O—R ₃ , and m is 0 to 2 Integers, which may be the same or different. Y represents a divalent to hexavalent organic group; R ₂ is a hydroxyl group, a carboxyl group, OR ₃ or COO-R ₃ , and n is an integer of 0 to 4, which may be the same or different. Here, R ₃ is an organic group having 1 to 15 carbon atoms. However, when there is no hydroxyl group as R ₁ , at least one of R ₂ must be a carboxyl group. Further, when there is no carboxyl group as R _2, R ₂ is at least one must be a hydroxyl group.

  The polyamide resin having the structure represented by the general formula (1) is, for example, a compound selected from diamine having a structure of X, bis (aminophenol), 2,4-diaminophenol, and the like; With a compound selected from tetracarboxylic anhydride, trimellitic anhydride, dicarboxylic acid or dicarboxylic dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative and the like having a structure of Y It can be obtained by In the case of a dicarboxylic acid, a dicarboxylic acid derivative in the form of an active ester in which 1-hydroxy-1,2,3-benzotriazole or the like has been reacted in advance may be used in order to increase the reaction yield and the like.

In a polyamide resin having a structure represented by the general formula (1), OR ₃ as a substituent of X, OR ₃ and COO-R ₃ as a substituent of Y are an alkaline aqueous solution of a hydroxyl group or a carboxyl group. It is a group protected by an organic group having 1 to 15 carbon atoms for the purpose of adjusting the solubility of the compound, and a hydroxyl group or a carboxyl group may be protected if necessary. Examples of R ₃ include formyl, methyl, ethyl, propyl, isopropyl, tert-butyl, tert-butoxycarbonyl, phenyl, benzyl, tetrahydrofuranyl, tetrahydropyranyl and the like. Can be

等が挙げられるがこれらに限定されるものではない。 X of the polyamide resin having a structure represented by the general formula (1) of the present invention is, for example,

And the like, but are not limited thereto.

より選ばれるものであり、また２種以上用いても良い。 Particularly preferred among these are:

And two or more of them may be used.

Further, Y of the polyamide resin having the structure represented by the general formula (1) is, for example,

And the like, but are not limited thereto.
Particularly preferred among these are:

より選ばれるものであり、また２種以上用いても良い。

And two or more of them may be used.

  In the present invention, it is desirable to seal the terminal from the viewpoint of storage stability. For sealing, a derivative having an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group can be introduced as an acid derivative or an amine derivative at the terminal of the polyamide represented by the general formula (1). Specifically, a diamine having a structure of X or a compound selected from bis (aminophenol), 2,4-diaminophenol, etc., a silicone diamine having a structure of Z, and a tetracarboxylic acid having a structure of Y, which are blended as necessary. Formula (1) obtained by reacting a compound selected from acid anhydride, trimellitic anhydride, dicarboxylic acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative and the like. After synthesizing a polyamide resin having a structure, the terminal amino group contained in the polyamide resin is converted to an amide using an acid anhydride containing an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group. It is preferable to cap. Examples of the group derived from an acid anhydride containing an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group after reacting with an amino group include, for example,

And the like, but are not limited thereto.

Particularly preferred among these are:

And two or more of them may be used. The method is not limited to this method, and the terminal acid contained in the polyamide resin is capped as an amide using an amine derivative containing an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group. You can also.

等であるがこれらに限定されるものではなく、また２種以上用いても良い。 Further, Z of the polyamide resin containing a structure represented by the general formula (1) used as necessary is, for example,

However, the present invention is not limited to these, and two or more kinds may be used.

  Z of the polyamide resin having the structure represented by the general formula (1) is used, for example, when particularly excellent adhesion to a substrate such as a silicon wafer is required. %. If the amount exceeds 40 mol%, the solubility of the resin in the exposed portion is extremely reduced, and undeveloped portions (scum) are generated.

  The photosensitive diazoquinone compound used in the present invention is a compound having a 1,2-benzoquinonediazide or 1,2-naphthoquinonediazide structure, and is disclosed in U.S. Pat. Nos. 2,772,972 and 2,797,213. No. 3,669,658. For example, the following are mentioned.

  Among these, an ester compound of a phenol compound and 1,2-naphthoquinone-2-diazide-5-sulfonic acid or 1,2-naphthoquinone-2-diazide-4-sulfonic acid is particularly preferred. Examples of the phenol compound include the following, but are not limited thereto. Also, two or more of these may be used.

  Further, the compounding amount of the photosensitive diazoquinone compound to the polyamide resin is 1 to 50 parts by weight with respect to 100 parts by weight of the polyamide resin. If the compounding amount is less than 1 part by weight, the patterning property of the resin is poor. If it exceeds 50 parts by weight, not only does the sensitivity drop significantly, but the tensile elongation of the film also drops significantly. A semiconductor device in which a film having a small tensile elongation is applied to the element surface is not preferable because reliability such as thermal stress lowers.

  A dihydropyridine derivative can be added to the positive photosensitive resin composition of the present invention, if necessary, to enhance the photosensitive characteristics. As the dihydropyridine derivative, for example, 2,6-dimethyl-3,5-diacetyl-4- (2'-nitrophenyl) -1,4-dihydropyridine, 4- (2'-nitrophenyl) -2,6-dimethyl- 3,5-Dicarboethoxy-1,4-dihydropyridine, 4- (2 ', 4'-dinitrophenyl) -2,6-dimethyl-3,5-dicarbomethoxy-1,4-dihydropyridine and the like. Can be.

The present invention is characterized in that a fluorine compound is added to a polyamide resin having a structure represented by the general formula (1) and a photosensitive diazoquinone compound. Usually, fluorine is used as a gas at the time of dry etching, and examples thereof include CF ₄ , CHF ₃ , C ₂ F ₆ , CH ₂ F ₂ , and SF ₆ . Fluorine contained in the etching gas is scientifically extremely active because it functions as a fluorine radical. A silicon-based inorganic film substrate such as Si, SiO ₂ and Si ₃ N ₄ reacts with Si to generate a SiF ₄ compound and volatilizes. In dry etching, an etching gas and an organic substance react with each other to cause deposition and adhere to the side wall of the pattern opening and the resin surface.

  In the present invention, by using a fluorine compound represented by the following formula (5), the amount of deposition generated during dry etching can be reduced. As an effect, it is considered that the fluorine concentration of the entire system is increased by blending a fluorine-containing low molecular weight compound, and the processability is improved. The fluorine compound has a structure represented by the following formula (5), and may be used alone or in combination of two or more.

  The compounding amount of the fluorine compound to the polyamide resin (1) is 0.5 to 20 parts by weight with respect to 100 parts by weight of the polyamide resin. When the compounding amount is less than the lower limit, there is no effect of suppressing the deposition by mixing. . Conversely, if the value exceeds the upper limit, poor appearance during coating occurs.

The positive photosensitive resin composition of the present invention may contain additives such as a leveling agent and a silane coupling agent, if necessary.
In the present invention, these components are dissolved in a solvent and used in the form of a varnish. Examples of the solvent include N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, and propylene glycol. Monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropio And the like, and may be used alone or as a mixture.

  In the method of using the positive photosensitive resin composition of the present invention, the composition is first applied to a suitable support, for example, a silicon wafer, a ceramic substrate, an aluminum substrate, or the like. In the case of a semiconductor device, the application amount is such that the final film thickness after curing is 0.1 to 30 μm. When the thickness is less than the lower limit, it is difficult to sufficiently exert the function as a protective surface film of the semiconductor element, and when the thickness exceeds the upper limit, not only becomes difficult to obtain a fine processing pattern, Processing takes time and throughput is reduced. Examples of the coating method include spin coating using a spinner, spray coating using a spray coater, dipping, printing, and roll coating. Next, after pre-baking at 60 to 130 ° C. to dry the coating film, the desired pattern shape is irradiated with actinic radiation. As the actinic radiation, X-rays, electron beams, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 to 500 nm are preferable. Next, a relief pattern is obtained by dissolving and removing the irradiated portion with a developing solution. Examples of the developer include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia; primary amines such as ethylamine and n-propylamine; diethylamine; -Secondary amines such as propylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, and quaternary ammoniums such as tetramethylammonium hydroxide and tetraethylammonium hydroxide. An aqueous solution of an alkali such as a salt and an aqueous solution obtained by adding an appropriate amount of a water-soluble organic solvent such as an alcohol such as methanol and ethanol or a surfactant thereto can be suitably used. As a developing method, a system such as spray, paddle, immersion, and ultrasonic wave can be used. Next, the relief pattern formed by development is rinsed. Distilled water is used as the rinsing liquid. Next, heat treatment is performed to form an oxazole ring, and a final pattern having high heat resistance is obtained.

  The positive photosensitive resin composition according to the present invention is useful not only for semiconductors, but also for interlayer insulation of multilayer circuits and cover coats of flexible copper clad boards, solder resist films, liquid crystal alignment films, and the like. When used, a particularly useful and highly reliable semiconductor device can be obtained. As a method for manufacturing a semiconductor device, a conventionally known method can be used.

Hereinafter, the present invention will be specifically described with reference to examples.
<< Example 1 >>
* Synthesis of polyamide resin 443.2 g (0.9 mol) of dicarboxylic acid derivative obtained by reacting 1 mol of diphenyl ether-4,4'-dicarboxylic acid with 2 mol of 1-hydroxy-1,2,3-benzotriazole ), 366.3 g (1.0 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane, a thermometer, a stirrer, a material inlet, and a dry nitrogen gas inlet tube The mixture was placed in a separable flask having a mouth, and 3000 g of N-methyl-2-pyrrolidone was added to dissolve the mixture. Thereafter, the reaction was carried out at 75 ° C. for 12 hours using an oil bath.
Next, 32.8 g (0.2 mol) of 5-norbornene-2,3-dicarboxylic anhydride dissolved in 500 g of N-methyl-2-pyrrolidone was added, and the mixture was further stirred for 12 hours to complete the reaction. After the reaction mixture was filtered, it was poured into a mixed solution of water / methanol = 3/1, the precipitate was collected by filtration, sufficiently filtered with water, dried under vacuum, and represented by the desired general formula (1). , X is the following formula X-1, Y is the following formula Y-1, and the terminal is the following formula E-1; a = 100, b = 0, and a polyamide resin (A-1) was obtained.

* Preparation of Positive Photosensitive Resin Composition 100 g of the synthesized polyamide resin (A-1), 25 g of diazoquinone (Q-1) having a structure of the following formula, and 5.0 g of a fluorine compound having a structure of the following formula P-1 It was dissolved in 200 g of N-methyl-2-pyrrolidone and stirred for 3 hours. Thereafter, the stirring was stopped and the mixture was left at room temperature. After 3 hours, the external appearance was visually observed. As a result, no bubbles were found. Thereafter, the mixture was filtered through a 0.2 μm Teflon (R) filter to obtain a photosensitive resin composition.

* Preparation of cured polybenzoxazole film A photosensitive resin composition, which is a resin precursor varnish for a heat-resistant polymer protective film containing a polybenzoxazole precursor synthesized by the above-described method, is applied on a wafer substrate by a plasma CVD method. After coating on the formed 7000 ° Si ₃ N ₄ film with a spin coater or the like, it was dried on a hot plate or the like to obtain a coating film. This coating film was exposed and developed to form a pattern. Further, the wafer is heated in an oven at 150 ° C. for 30 minutes and at 320 ° C. for 30 minutes to cause a ring-closing reaction of the polybenzoxazole resin precursor to form a cured polybenzoxazole film.

* Etching of Inorganic Film Next, the wafer was etched using an etching apparatus L-210DL (manufactured by Anelva Co., Ltd .; maximum output: 300 W) in a ratio of oxygen: tetrafluoromethane = 7.7: 92.3% by volume. Etching of the inorganic film was performed with the mixed gas at an output of 200 W and a process pressure of 5 Pa for 7 minutes. At this time, the decrease in the thickness of the cured polybenzoxazole film was about 1.0 μm.

* Evaluation after inorganic film etching treatment A 5 μm × 20 μm rectangular pattern opening was observed using a scanning electron microscope, and as a result of confirming the remaining deposition on the opening and the side wall of the opening, no deposition was observed. .

<< Example 2 >>
A trial manufacture and evaluation were performed in the same manner as in Example 1 except that the addition amount of the fluorine compound was changed to 15.0 g in Example 1.
<< Example 3 >>
In the synthesis of the polyamide resin in Example 1, 132.8 g (0.8 mol) of terephthalic acid and 33.2 g (0.2 mol) of isophthalic acid were used instead of 1 mol of diphenyl ether-4,4′-dicarboxylic acid. , 1-hydroxy-1,2,3-benzotriazole (2 mol) and 360.4 g (0.9 mol) of a dicarboxylic acid derivative obtained by reaction with hexafluoro-2,2-bis (3-amino-4 -Hydroxyphenyl) propane using 366.3 g (1.0 mol), represented by the general formula (1), wherein X is the following formula X-1, Y is the following formula Y-2 and Y-3, and the terminal is A polyamide resin consisting of a = 100 and b = 0 in the following formula E-1 was synthesized, and the other prototypes and evaluations were performed in the same manner as in Example 1.

<< Example 4 >>
17.1 g (0.055 mol) of 4,4'-oxydiphthalic anhydride, 12.4 g (0.105 mol) of 2-methyl-2-propanol and 10.9 g (0.138 mol) of pyridine were measured with a thermometer. Into a four-necked separable flask equipped with a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube, and dissolved by adding 150 g of N-methyl-2-pyrrolidone. 14.9 g (0.110 mol) of 1-hydroxy-1,2,3-benzotriazole was dropped into this reaction solution together with 30 g of N-methyl-2-pyrrolidone, and then 22.7 g (0.110 mol) of dicyclohexylcarbodiimide. Was added dropwise together with 50 g of N-methyl-2-pyrrolidone, and reacted at room temperature overnight. Thereafter, 27.1 g of a dicarboxylic acid derivative (active ester) obtained by reacting 1 mol of diphenyl ether-4,4'-dicarboxylic acid with 2 mol of 1-hydroxy-1,2,3-benzotriazole to this reaction solution. (0.055 mol) and 44.8 g (0.122 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane were added together with 70 g of N-methyl-2-pyrrolidone. Stir for 2 hours. Thereafter, the mixture was stirred at 75 ° C. for 12 hours using an oil bath to complete the reaction. After the reaction mixture was filtered, the reaction mixture was poured into a solution of water / methanol = 3/1 (volume ratio), and the precipitate was collected by filtration, sufficiently washed with water, and dried under vacuum to obtain a compound represented by the general formula (1). Wherein X is the following formula X-1, Y is the following formula Y-1 and Y-4, and a polyamide resin consisting of a = 100 and b = 0 is synthesized. An evaluation was performed.

<< Example 5 >>
In the synthesis of the polyamide resin in Example 1, instead of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane, 3,3′-diamino-4,4′-dihydroxydiphenylsulfone 280. 0 g (1.0 mol) is represented by the general formula (1), wherein X is the following formula X-2, Y is the following formula Y-1, and the terminal is the following formula E-1, a = 100, b = No. 0 was synthesized and the same trial production and evaluation as in Example 1 were performed for the other components.

<< Example 6 >>
In the synthesis of the polyamide resin in Example 1, hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane was reduced to 348.0 g (0.95 mol), and instead of 1,3-bis (3 -Aminopropyl) -1,1,3,3-tetramethyldisiloxane (12.4 g, 0.05 mol) was added, X was represented by the following formula X-1, and Y was represented by the following formula: A polyamide resin composed of a = 95 and b = 5 in which Y-1 and Z are represented by the following formula Z-1 and the terminal was represented by the following formula E-1 was synthesized, and the other prototypes and evaluations were performed in the same manner as in Example 1.

<< Example 7 >>
A trial production and evaluation were performed in the same manner as in Example 1 except that a fluorine compound having the structure of the following formula P-2 was used instead of P-1 in the preparation of the positive photosensitive resin composition in Example 1.
<< Embodiment 8 >>
A trial production and evaluation were performed in the same manner as in Example 1 except that a fluorine compound having the structure of the following formula P-3 was used instead of P-1 in the preparation of the positive photosensitive resin composition in Example 1.
<< Example 9 >>
A trial production and evaluation were performed in the same manner as in Example 1 except that a fluorine compound having the structure of the following formula P-4 was used instead of P-1 in the preparation of the positive photosensitive resin composition in Example 1.
<< Example 10 >>
A trial production and evaluation were performed in the same manner as in Example 1 except that a fluorine compound having a structure of the following formula P-5 was used instead of P-1 in the preparation of the positive photosensitive resin composition in Example 1.

<< Example 11 >>
A trial manufacture and evaluation were performed in the same manner as in Example 1 except that the addition amount of the fluorine compound was changed to 1.0 g in Example 1.
<< Example 12 >>
A trial production and evaluation were performed in the same manner as in Example 1 except that the amount of diazoquinone (Q-1) added was changed to 10 g.
<< Example 13 >>
A trial production and evaluation were performed in the same manner as in Example 1 except that the amount of diazoquinone (Q-1) added was changed to 40 g.

<< Comparative Example 1 >>
In Example 1, trial manufacture and evaluation were performed without adding the fluorine compound P-1.
<< Comparative Example 2 >>
A trial manufacture and evaluation were performed in the same manner as in Example 1 except that the amount of the fluorine compound P-1 was changed to 0.1 g in Example 1.
<< Comparative Example 3 >>
A trial manufacture and evaluation were performed in the same manner as in Example 1 except that the amount of the fluorine compound P-1 was changed to 30 g in Example 1.
<< Comparative Example 4 >>
A trial manufacture and evaluation were performed in the same manner as in Example 1 except that the amount of the fluorine compound P-1 was changed to 30 g in Example 5.

The evaluation results of Examples 1 to 13 and Comparative Examples 1 to 4 are shown in Tables 1 and 2.

Claims (11)

A positive photosensitive resin composition comprising 100 parts by weight of an alkali-soluble resin, 1 to 50 parts by weight of a photosensitive diazoquinone compound, and 0.5 to 20 parts by weight of a fluorine compound. The positive photosensitive resin composition according to claim 1, wherein the alkali-soluble resin is a polyamide resin. The positive photosensitive resin composition according to claim 2, wherein the alkali-soluble resin is a polyamide resin containing a polybenzoxazole precursor structure, a polyamic acid structure, or a polyamic acid ester structure alone or in combination of two or more. 4. The positive photosensitive resin composition according to claim 2, wherein the alkali-soluble resin is a polyamide resin having a structure represented by the general formula (1).

The positive photosensitive resin composition according to claim 4, wherein X in the polyamide resin having the structure represented by the general formula (1) is selected from the group of the formula (2).

The positive photosensitive resin composition according to claim 4 or 5, wherein Y in the polyamide resin having the structure represented by the general formula (1) is selected from the group consisting of the formula (3) and the formula (4).

The polyamide resin having a structure represented by the general formula (1) is end-capped with a compound containing an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group. 4. The positive photosensitive resin composition according to item 1. The positive photosensitive resin composition according to any one of claims 1 to 7, wherein the fluorine compound is a fluorine derivative of a compound containing a phenolic hydroxyl group. The positive photosensitive resin composition according to any one of claims 1 to 8, wherein the fluorine compound is a compound represented by the following formula (5).

The positive photosensitive resin composition according to any one of claims 1 to 9, which is coated on a semiconductor element so as to have a thickness of 0.1 to 30 µm after heat dehydration ring closure, prebaking, exposure, development, Semiconductor device obtained by heating The positive photosensitive resin composition according to any one of claims 1 to 9, which is coated on a display element substrate so as to have a thickness of 0.1 to 30 µm after heat dehydration ring closure, prebaking, exposure, A display element obtained by developing and heating.