JP2004296753A - Plasma exposure component and its surface treatment method as well as plasma processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To eliminate the problem of particles release even when long time aging is not carried out with respect to a plasma exposure component arranged in a processing chamber after processing through blasting. <P>SOLUTION: The plasma exposure component arranged at a position exposed to a plasma in the processing chamber for processing an objective matter by the effect of a plasma is made of quartz or alumina, and provided with recesses and projections on the surface thereof formed by blasting. A wet etching treatment for the eluation of the surface is applied after the blasting, while maintaining the recessed and projected configuration by supplying the etching solution of hydrofluoric acid onto the surface of the recesses and projections. Microcracks or the like generated upon blasting are removed by the etching treatment whereby the generating amount of particles can be reduced sufficiently even when a long time aging is not carried out. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a plasma processing apparatus for performing a predetermined process on a surface of a substrate by using plasma, and more particularly to a component disposed at a position in a processing chamber that is exposed to plasma.
[0002]
[Prior art]
2. Description of the Related Art Performing a predetermined process on a surface of a substrate by plasma is actively performed in the manufacture of various semiconductor devices, liquid crystal displays, and the like. For example, when a fine circuit is formed on the surface of a substrate, plasma etching for etching the substrate with plasma is performed in an etching process using a resist pattern as a mask. In addition, in forming various conductive films and insulating films, a method of plasma CVD (chemical vapor deposition) utilizing a gas phase reaction in plasma has been put to practical use. In a plasma processing apparatus, plasma is formed in a processing chamber by high-frequency discharge or direct current bipolar discharge, and processing is performed by the action of plasma while a substrate is placed at a predetermined position.
[0003]
In such a plasma processing apparatus, a specific component is often arranged in a state where it is exposed to plasma. For example, when a substrate holder that holds a substrate at a predetermined position in a processing chamber forms one electrode, a part of the surface of the substrate holder is covered with a ceramic component so that discharge does not occur in unnecessary places. I have to. This component is exposed to the plasma as well as the substrate. Hereinafter, components exposed to plasma in the processing chamber are referred to as plasma-exposed components.
[0004]
In such a plasma processing apparatus, a film deposition phenomenon often occurs on an exposed surface in a processing chamber so as to compete with etching by ion irradiation. In many cases, this is due to the deposition of reaction products in the plasma on the exposed surfaces. For example, in plasma etching using a fluorocarbon-based gas, a carbon-based polymer film is easily deposited on an exposed surface. Whether etching is dominant or film deposition is dominant depends on the pressure in the processing chamber during plasma formation, the power input during plasma formation, the type of gas, and the like.
[0005]
As a problem when the film deposition becomes dominant, there is a problem that the deposited film is peeled off and particles are generated. When the deposited film has a certain thickness, it tends to peel off due to internal stress and its own weight. The peeled film generates fine particles (collectively referred to herein as particles) that stain the substrate.
In order to prevent generation of particles due to film peeling, the exposed surface is often roughened, that is, a fine uneven surface is often used. When the surface is finely uneven, the film is prevented from being caught by the unevenness and peeled off. The formation of the uneven surface is performed by a blast treatment such as a sand blast method.
[0006]
[Problems to be solved by the invention]
Regarding the above-described plasma-exposed component, the surface exposed to the plasma is often an uneven surface. Here, according to the research by the inventor, the surface state of the blast-treated plasma-exposed component is unstable, so that the plasma-exposed component cannot be used as it is in plasma treatment. In many cases, ceramic parts must be used after aging for several hours (eg, 5 hours). Aging is an operation in which the ceramic component is placed in a processing chamber and the same processing as the actual plasma processing is performed for a predetermined time using a dummy substrate. The inventor has confirmed that if a plasma-exposed component is used without aging, a large amount of particles appearing to be emitted from the plasma-exposed component are generated. Aging for several hours can reduce such a problem. However, wasteful operation of expensive equipment for several hours is a problem in terms of cost and productivity. The need for a dummy substrate is also a problem in terms of cost.
The invention of the present application has been made in order to solve such a problem, and there is no problem of particle emission without aging for a long time for a plasma-exposed component that is blasted and placed in a processing chamber. It has technical significance that can be done.
[0007]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, an invention according to claim 1 of the present application is directed to a plasma processing apparatus that forms plasma in a processing chamber and processes an object by the action of the plasma at a position exposed to the plasma in the processing chamber. A plasma-exposed component to be placed,
Irregularities are formed by blasting on the surface exposed in the processing chamber, and after blasting, wet etching is performed by supplying an etching solution to the irregularities to elute the surface while maintaining the irregularities. It has the configuration that it is.
Further, in order to solve the above problem, the invention according to claim 2 has a structure in the structure of claim 1 in which the etching solution is a hydrofluoric acid solution and is made of quartz or alumina.
According to another aspect of the present invention, there is provided a plasma processing apparatus that forms a plasma in a processing chamber and performs processing on an object by the action of the plasma. A surface treatment method for a plasma-exposed component to be arranged,
A step of forming irregularities by blasting the surface of the plasma-exposed component exposed to plasma,
After the blasting, a wet etching step of supplying an etchant to the uneven surface to elute the surface while maintaining the uneven shape is included.
According to a fourth aspect of the present invention, in order to solve the above problem, in the configuration of the third aspect, the etching solution is a hydrofluoric acid solution, and the plasma-exposed component is made of quartz or alumina. Having a configuration.
In order to solve the above problem, the invention according to claim 5 provides a processing chamber provided with an exhaust system, a gas introduction system for introducing a predetermined gas into the processing chamber, and energy given to the introduced gas. A plasma processing apparatus comprising: a plasma forming unit that forms plasma; and a substrate holder that holds a substrate at a position in a processing chamber that is processed by the formed plasma,
A plasma exposure component disposed at a position exposed to the plasma in the processing chamber;
This plasma-exposed component has an uneven surface formed by blasting on the surface exposed to the plasma. After the blasting, wet etching is performed by supplying an etchant to elute the surface while maintaining the unevenness. It has a configuration in which processing is performed.
According to a sixth aspect of the present invention, in order to solve the above problem, in the configuration of the fifth aspect, the etching solution is a hydrofluoric acid solution, and the plasma exposure component is made of quartz or alumina. Having a configuration.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention (hereinafter, embodiments) will be described.
FIG. 1 is a schematic front sectional view of a plasma processing apparatus according to an embodiment of the present invention. The apparatus shown in FIG. 1 performs plasma etching. More specifically, the apparatus shown in FIG. 1 includes a processing chamber 1 having an exhaust system 11, a gas introduction system 2 for introducing a predetermined gas into a plasma forming region set in the processing chamber 1, and a gas introduction system 2. Plasma generating means 3 for applying energy to the generated gas to form a plasma in a plasma forming region, and a substrate holder 4 for holding a substrate 9 at a position in a processing chamber 1 to be processed by the formed plasma.
[0009]
The processing chamber 1 is an airtight vacuum container. As shown in FIG. 1, a transfer chamber (not shown) is hermetically connected to the processing chamber 1 via a gate valve (not shown). A transfer robot (not shown) is provided in the transfer chamber. A load lock chamber (not shown) is hermetically connected to the transfer chamber via a gate valve (not shown). The substrate 9 is transferred from the atmosphere side to the processing chamber 1 via the load lock chamber by the transfer robot, and is returned to the atmosphere side after the processing.
The processing chamber 1 is electrically grounded. The processing chamber 1 is exhausted by the exhaust system 11 for 10 minutes. ^-6 -10 ^-7 It is configured to be exhausted to about Torr. The evacuation system 11 includes a vacuum pump such as a turbo molecular pump, and is provided with an evacuation speed regulator (not shown).
[0010]
In this embodiment, the gas introduction system 2 can introduce a carbon tetrafluoride gas, a hydrogen gas, and an oxygen gas into the processing chamber 1 as shown in FIG. The gas introduction system 2 includes a gas cylinder (not shown) storing these gases, and a valve 22 and a flow regulator 23 provided in a pipe 21 connecting each gas cylinder to the processing chamber 1.
[0011]
The plasma forming means 3 includes a counter electrode 31 provided in the processing chamber 1 so as to face the substrate holder 4, and a plasma power source 32 for generating a discharge by applying a voltage to the counter electrode 31 to generate a plasma. It is mainly composed of
The counter electrode 31 is attached to the upper wall of the processing chamber 1 via the insulating part 33. The counter electrode 31 is formed of an electrode body 311, a surface plate 312 attached to the electrode body 311, and the like.
[0012]
In the present embodiment, the counter electrode 31 is also used as a path for gas introduction by the gas introduction system 2. That is, a cavity is formed between the electrode body 311 and the surface plate 312. The surface plate 312 is provided with a large number of gas blowing holes 310 therethrough. The gas introduction system 2 introduces gas into the cavity once and blows the gas downward through the gas blowing hole 310.
[0013]
The surface plate 312 is attached to the electrode body 311 by a clamp mechanism. The clamp mechanism includes a sandwiching plate 313 that sandwiches the surface plate 312 together with the electrode body 311, a fixing screw 314 that screws the sandwiching plate 313, and the like. As shown in FIG. 1, the fixing screw 314 screws the sandwiching plate 313 to the insulating portion 33. Further, a protective cover 315 is provided so as to cover the fixing screw 314. This is because the fixing screw 314 is made of metal such as aluminum, and without the protective cover 315, it is etched by plasma to generate particles.
The surface plate 312 is formed of silicon (for example, polycrystalline silicon) so that etching does not cause a problem because it is easily etched by plasma. Since the surface plate 312 made of silicon is brittle, it is attached to the electrode body 311 by being clamped by a clamp mechanism without directly screwing.
[0014]
The substrate holder 4 has a trapezoidal configuration for holding the substrate 9 placed on the upper surface (substrate holding surface). The substrate holder 4 mainly includes a metal holder main body 41 and a dielectric block 42 fixed to the holder main body 41. The substrate holder 4 is provided so as to face the opposing electrode 31 in parallel, and the opposing electrode 31 and the substrate holder 4 form a parallel plate electrode structure.
[0015]
In this embodiment, a high-frequency power supply having a frequency of 60 MHz and an output of about 2.3 kW is employed as the plasma power supply 32. The high frequency voltage applied by the plasma power supply 32 to the counter electrode 31 causes a high frequency discharge between the counter electrode 31 and the substrate holder 4, so that the gas supplied with the high frequency energy is turned into plasma to form plasma P. Has become. The plasma power supply 32 is a high-frequency power supply in the present embodiment, and is connected to the counter electrode 31 via a matching device (not shown).
[0016]
In the apparatus of the present embodiment, a substrate temperature adjusting means for adjusting the temperature while cooling the substrate 9 to a predetermined temperature during the etching process is provided. Specifically, the substrate temperature adjusting means is a cooling mechanism 43 that cools the substrate 9 via the substrate holder 4. The cooling mechanism 43 cools the refrigerant by flowing the refrigerant through a cavity 40 provided in the substrate holder 4. The cooling mechanism 43 includes a refrigerant introduction pipe 431 for introducing a refrigerant into the cavity 40, a refrigerant discharge pipe 432 for discharging the refrigerant from the cavity 40, a circulator 433 for recooling the refrigerant to a predetermined temperature and returning the refrigerant to the cavity 40, and the like. Have been.
[0017]
Further, in order to enhance the efficiency, accuracy, reproducibility, etc. of cooling by the cooling mechanism 43, the apparatus of the present embodiment employs a heat exchange gas introduction system 5 for introducing a heat exchange gas between the substrate 9 and the substrate holder 4. Is provided. Even when the substrate 9 and the substrate holder 4 are brought into surface contact, the surfaces of both surfaces are not completely flat but have minute irregularities, so that a minute space is formed at the interface. This space is a vacuum pressure and has poor heat transfer efficiency. Therefore, a heat exchange gas such as helium having good heat transfer efficiency is introduced to increase the pressure, thereby improving heat transfer efficiency. In order to secure a relatively high pressure space into which the heat exchange gas has been introduced between the substrate 9 and the substrate holder 4, a concave portion 420 is provided on the substrate holding surface of the substrate holder 4 as shown in FIG. The heat exchange gas is introduced into the recess 420.
[0018]
Further, the apparatus of the present embodiment is provided with an electrostatic suction mechanism 6 for electrostatically holding the substrate 9 on the substrate holder 4 in order to further increase the efficiency, accuracy, reproducibility, and the like of the temperature adjustment by the substrate temperature adjusting means. . The electrostatic attraction mechanism 6 mainly includes an attraction electrode 61 provided in the dielectric block 42 and an attraction power supply 62 for applying an attraction voltage to the attraction electrode 61. The dielectric block 42 is dielectrically polarized by the voltage provided by the suction power supply 62, and static electricity is induced on the substrate holding surface. Thus, the substrate 9 is electrostatically attracted to the substrate holding surface. The suction power supply 62 is provided with a filter circuit (not shown) for preventing a high frequency from reaching the suction power supply 62.
[0019]
In the present embodiment, a bias power supply 44 is connected to the substrate holder 4 in order to extract ions from the plasma P and make them vertically incident on the substrate 9. The bias power supply 44 is a high-frequency power supply having a frequency of 1.6 MHz and an output of about 1.8 kW, and is connected to the substrate holder 4 via a matching unit (not shown). When the bias power supply 44 applies a high-frequency voltage to the substrate holder 4 in a state where the plasma P is formed, a self-bias voltage, which is a voltage of a negative DC component, is applied to the substrate 9 due to the interaction between the high-frequency and the plasma P. . As a result, ions are extracted from the plasma P, and the etching process is efficiently performed by utilizing the impact energy of the ions.
[0020]
Note that a correction ring 45 is provided so as to surround the substrate 9 held by the substrate holder 4. The correction ring 45 is provided for protecting the surface of the dielectric block 42 and preventing non-uniform processing at the periphery of the substrate 9. The correction ring 45 is located at a position close to the substrate 9 and is etched similarly to the substrate 9. For this reason, it is formed of the same material as the substrate 9 (for example, silicon) so that etching does not cause any problem.
[0021]
A ring-shaped outer ring 48 is provided so as to surround the correction ring 45. The outer ring 48 is provided so as to cover the surface of the substrate holder 4 with a removable member in a region outside the correction ring 45. Outside the correction ring 45, etching is performed or film deposition occurs to a lesser extent than the correction ring 45. For this reason, when it is etched, it needs to be replaced due to abrasion, and when film deposition occurs, it needs to be replaced before the thickness becomes a certain large value. For this reason, the outer ring 48 is provided detachably.
[0022]
An insulating section 46 is provided to insulate between the substrate holder 4 and the processing chamber 1 maintained at the ground potential. The substrate holder 4 is hermetically attached to the bottom wall of the processing chamber 1 via an insulating part 46. Further, another insulating portion 46 is provided so as to surround the periphery of the substrate holder 4.
Further, a discharge shield 47 is provided so as to surround the insulating portion 46. The discharge shield 47 is for preventing unnecessary discharge around the substrate holder 4 and is a metal member maintained at the ground potential.
[0023]
Now, this plasma processing apparatus has a ceramic component in the processing chamber 1. For example, some insulating parts 33 and 46 are made of ceramics such as alumina. The protective cover 315 covering the fixing screw 314 of the clamp mechanism and the outer ring 48 located outside the substrate 9 on the substrate holder 4 are made of quartz.
[0024]
In the present embodiment, a member whose surface is exposed in the processing chamber 1 and whose surface is likely to cause film deposition and etching by plasma is subjected to a special surface treatment. In this embodiment, a special surface treatment is applied to the protective cover 315 and the outer ring 48. Hereinafter, a method of manufacturing the protective cover 315 and the outer ring 48 will be described with reference to FIGS. 2A and 2B, together with the description of the embodiment of the invention of the plasma exposure component and the embodiment of the invention of the surface treatment method of the plasma exposure component. FIG. 2 is a diagram schematically illustrating a method of manufacturing the plasma-exposed component according to the embodiment.
[0025]
As shown in FIG. 2, first, after a bulk material is prepared, it is finished to a predetermined shape by machining (cutting, cutting, or the like). Next, blast processing of # 500 is performed. Note that “# 500” is the size of the mesh at the time of blast processing, and is an expression according to JIS (Japanese Industrial Standard). By this blasting, the surface becomes uneven (roughness) of about 19 μm. Then, after the surface is washed with water (preferably pure water), wet etching using an etching solution is performed. Specifically, a hydrofluoric acid (HF) solution of about 5% (solvent is water) is used as an etching solution, and the surface is immersed in the etching solution for about 15 to 30 minutes. That is, etching is performed by the dipping method. Thereby, the surface is etched by about 0.6 to 1 μm. Thereafter, the surface is immersed in pure water, subjected to ultrasonic cleaning for about 30 minutes, and dried.
[0026]
If such a surface treatment is applied to the plasma-exposed component, the amount of emitted particles is so small that there is no problem even without long-term aging. The result of the experiment confirming this point will be described below.
FIG. 3 is a diagram showing the results of an experiment in which the effect of the wet etching treatment on the surface of the plasma-exposed component was confirmed. In this experiment, two outer rings were provided. After the two outer rings were similarly blasted, one was wet-etched and the other was not wet-etched. Then, similarly, it was arranged on the substrate holder 4 in the processing chamber 1 (outside the correction ring 45), and was similarly exposed to the plasma P.
[0027]
In this experiment, argon gas was introduced into the processing chamber 1, and plasma was formed by high-frequency discharge. Then, the number of particles floating in the processing chamber 1 was measured using a particle counter (the meaning of the term “particle” in this case is simply a general meaning of fine particles). The measurement time was set to 60 seconds, and the number of particles detected within this time was measured. FIG. 3 shows the result. The horizontal axis in FIG. 3 is the integrated time of plasma formation, and the vertical axis is the number of particles.
[0028]
As shown in FIG. 3, when the conventional outer ring 48 without wet etching is used, the number of particles exceeds 1000 after the start of plasma formation, and the number of particles decreases as the integration time of plasma formation increases. It can be seen that it takes as long as 6 hours to reach the particle number of 20 or less. On the other hand, when the outer ring 48 subjected to the wet etching was used, the number was 20 or less from the beginning of the plasma formation, which was a good result.
[0029]
It is not clear why the effect of particle reduction can be obtained by adding such a wet etching process, but it is considered as follows. FIG. 4 and FIG. 5 are diagrams showing a mechanism of particle reduction by performing a wet etching process on a plasma-exposed component. FIG. 4 is a diagram schematically illustrating the mechanism of particle generation when the wet etching is not performed, and FIG. 5 is a diagram schematically illustrating the surface state of the plasma-exposed component when the wet etching is performed. is there.
[0030]
As shown in FIG. 4A, when the surface S of the plasma-exposed component is subjected to the blast treatment, irregular irregularities are formed on the surface. At this time, it is considered that small cracks (hereinafter, microcracks) MC are generated on the surface S by the impact during the blasting process. Further, it is considered that the surface subjected to the blast treatment has a relatively large internal stress, including the portion where the microcrack MC has occurred, and is in an unstable state in terms of strength.
[0031]
In this state, when the plasma-exposed component is placed in the processing chamber 1 and exposed to the plasma P, the surface S is exposed due to energy or the like at the time of ion irradiation from the plasma P, as shown in FIG. It is thought that chipping and peeling are likely to occur, and a large amount of particles are generated due to this. In conventional plasma-exposed parts, particles are reduced by long-term aging because the surface is etched by the plasma P during aging and the surface including the micro cracks MC is cut to some extent. It is considered that the internal stress was reduced.
[0032]
On the other hand, when the surface S of the blast-processed plasma-exposed component as shown in FIG. 5A is wet-etched, the surface S elutes thinly as shown in FIG. It is in a state like "peeled off". When the surface S is eluted thinly in this way, the microcracks MC formed on the surface S are removed, and the vicinity of the surface S, where the internal stress is large and the strength is unstable, is eluted, and the internal stress is small and the strength is small. A stable surface is exposed. For this reason, it is considered that generation of particles is extremely reduced without performing aging for a long time.
[0033]
Particles can be reduced by the wet etching process for reasons other than the above. For example, in the blasted surface, the tip of the convex part may be extremely sharp, and it is considered that the sharp tip is likely to cause chipping. According to the wet etching process, the tip is slightly rounded and smoothed, so that chipping is reduced. In addition, it is considered that fine blasting may occur on the surface when blasting is performed. Residues are considered to be caused by chipping of the particulate matter sprayed during the blasting process, and by debris generated by shaving the surface of the plasma-exposed part. Most of such a residue is removed by cleaning after the blasting treatment, but may still remain after the cleaning, for example, when the residue adheres to the surface. The residue may peel off when receiving energy from the plasma to generate particles, but is removed by performing the wet etching process as described above. Therefore, generation of particles due to the residue is also eliminated.
[0034]
According to the observation by the inventor of the present invention with an optical microscope at a magnification of 500 times, it was confirmed that there were bright spots (bright spots) on the surface of the plasma-exposed component without the wet etching treatment. On the other hand, no bright spots were observed on the surface of the plasma-exposed component subjected to the wet etching treatment. The luminescent spot is considered to be due to the above-described microcracks or residues.
From the results shown in FIG. 3, according to the present embodiment, the amount of generated particles can be sufficiently reduced without aging, but aging may be performed for about one hour.
[0035]
Further, if the wet etching treatment is performed too much, it is conceivable that the surface becomes uneven and the surface becomes flat. In such a case, the effect of catching the deposited film and preventing the film from peeling is weakened. Therefore, it is preferable to perform wet etching within a range in which the uneven shape is maintained. For example, assuming that the average surface roughness (the average value of the distance between the peaks and valleys of the irregularities) is Ra and the average surface roughness after the wet etching is Ra ′, the wet etching is performed in a range of Ra ′ ≧ Ra / 2. Is preferred.
[0036]
In this embodiment, the quartz plasma-exposed parts are subjected to wet etching using a hydrofluoric acid solution as an etchant. However, the plasma-exposed parts made of alumina are similarly subjected to wet etching using a hydrofluoric acid solution. Can be. Generally, a hydrofluoric acid solution may be used for glass.
At the time of wet etching, a portion where etching is not required may be coated with a resist so as not to be etched.
[0037]
The plasma-exposed component to be subjected to the wet etching process is not limited to the protective cover 315 and the outer ring 48 described above, but may be another plasma-exposed component disposed in the processing chamber 2. For example, with respect to an anti-adhesion shield arranged to prevent film deposition on the wall surface of the processing chamber 2 and a diffusion prevention plate for preventing the diffusion of plasma, when they are exposed to plasma, the surface is exposed as described above. After blasting, wet etching may be performed. When the plasma-exposed component is made of quartz or alumina, a hydrofluoric acid solution is effective as an etching solution as described above, but a hydrofluoric acid solution may be used for other ceramic materials, Etchant may be used in some cases. Furthermore, in the case of a plasma-exposed component formed of a material other than ceramics, an etching solution is appropriately selected according to the material. It is sufficient that the selection of the etchant is made in accordance with the material of the surface to be exposed to the plasma. That is, for example, when a hydrofluoric acid solution is selected as the etching solution, the surface exposed to the plasma only needs to be made of ceramics such as quartz or alumina, and it is not necessary that all surfaces be made of ceramics such as quartz or alumina.
In the above description, the plasma processing apparatus performs plasma etching, but may be an apparatus that performs surface modification such as CVD, ashing, surface oxidation, and surface nitridation.
[0038]
【The invention's effect】
As described above, according to the invention described in each claim of the present application, the surface of the plasma exposure component exposed to the plasma in the processing chamber of the plasma processing apparatus has an uneven surface formed by blast processing, After the blasting process, a wet etching process is performed to supply the etching solution to the uneven surface and maintain the uneven shape while eluting the surface. The amount of generation can be reduced.
[Brief description of the drawings]
FIG. 1 is a schematic front sectional view of a plasma processing apparatus according to an embodiment of the present invention.
FIG. 2 is a view schematically showing a method of manufacturing a plasma-exposed component according to the embodiment.
FIG. 3 is a diagram showing the results of an experiment in which the effect of a wet etching process on the surface of a plasma-exposed component was confirmed.
FIG. 4 is a diagram illustrating a mechanism of particle reduction by performing a wet etching process on a plasma-exposed component, and is a diagram schematically illustrating a mechanism of particle generation when the wet etching process is not performed.
FIG. 5 is a diagram illustrating a mechanism of particle reduction by performing a wet etching process on a plasma exposure component, and is a diagram schematically illustrating a surface state of the plasma exposure component when wet etching is performed.
[Explanation of symbols]
1 Processing chamber
2 Gas introduction system
3 Plasma forming means
31 Counter electrode
311 electrode body
312 Surface plate
313 sandwich plate
314 Fixing screw
315 Protective cover
32 Power supply for plasma
4 Board holder
41 Holder body
42 Dielectric Block
43 Cooling mechanism
44 Power supply for bias
45 Correction ring
48 Outer ring
6 Electrostatic adsorption mechanism

Claims (6)

In a plasma processing apparatus that forms a plasma in a processing chamber and performs processing on an object by the action of the plasma, a plasma exposure component disposed at a position exposed to the plasma in the processing chamber,
Irregularities are formed by blasting on the surface exposed to the plasma, and after the blasting, wet etching is performed by supplying an etchant to the irregularities to elute the surface while maintaining the irregularities. A plasma-exposed component, characterized in that: The plasma exposure component according to claim 1, wherein the etching solution is a hydrofluoric acid solution and is made of quartz or alumina. A surface treatment method for a plasma-exposed component disposed at a position exposed to plasma in a processing chamber in a plasma processing apparatus that forms plasma in a processing chamber and performs processing on an object by the action of the plasma,
A step of forming irregularities by blasting the surface of the plasma-exposed component exposed to plasma,
A wet etching step of supplying an etchant to the uneven surface after the blast treatment to elute the surface while maintaining the uneven shape. 4. The method according to claim 3, wherein the etching solution is a hydrofluoric acid solution, and the plasma-exposed component is made of quartz or alumina. A processing chamber provided with an exhaust system, a gas introduction system for introducing a predetermined gas into the processing chamber, plasma forming means for applying energy to the introduced gas to form plasma, and processing is performed by the formed plasma. A plasma processing apparatus comprising a substrate holder that holds a substrate at a position in a processing chamber,
A plasma exposure component disposed at a position exposed to the plasma in the processing chamber;
This plasma-exposed part has an uneven surface formed by blast processing on the surface exposed to the plasma, and after the blast processing, wet etching is performed by supplying an etchant to elute the surface while maintaining the uneven shape. A plasma processing apparatus that has been subjected to processing. 6. The plasma processing apparatus according to claim 5, wherein the etching solution is a hydrofluoric acid solution, and the plasma exposure component is made of quartz or alumina.

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