Nothing Special   »   [go: up one dir, main page]

JP2004281561A - Adhesive tape - Google Patents

Adhesive tape Download PDF

Info

Publication number
JP2004281561A
JP2004281561A JP2003068574A JP2003068574A JP2004281561A JP 2004281561 A JP2004281561 A JP 2004281561A JP 2003068574 A JP2003068574 A JP 2003068574A JP 2003068574 A JP2003068574 A JP 2003068574A JP 2004281561 A JP2004281561 A JP 2004281561A
Authority
JP
Japan
Prior art keywords
adhesive
base film
layer
adhesive tape
adhesive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003068574A
Other languages
Japanese (ja)
Other versions
JP4316264B2 (en
Inventor
Tomoyuki Aogaki
智幸 青垣
Yoshihisa Kano
義久 加納
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP2003068574A priority Critical patent/JP4316264B2/en
Publication of JP2004281561A publication Critical patent/JP2004281561A/en
Application granted granted Critical
Publication of JP4316264B2 publication Critical patent/JP4316264B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an adhesive tape which is capable of preventing an adhesive agent from transferring to a dicing frame from its part where the dicing frame is pasted and excellent in releasability at an interface between an adhesive agent layer and a base film when a chip is separated from its other part where a wafer is pasted on. <P>SOLUTION: An adhesive agent layer is provided, at least, on one surface of the base film, and a separator is provided on the adhesive agent layer side for the formation of the semiconductor wafer dicing-bonding adhesive tape that is used in a bonding process of manufacturing a semiconductor device. The adhesive agent is formed into a single layer, and the adhesive tape is composed of one part where the adhesive agent layer and the base film layer are set separable from each other and the adhesive agent layer is easily transferred to an adherend, and the other part where the adhesive agent layer and the base film layer are hardly separated from each other and the adhesive agent layer is hardly transferred to the adherend. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、基材フィルムの少なくとも片面に粘着剤層を設け、粘着剤層側に通常のセパレータを設けてなる粘接着テープに用いられる基材フィルムに関するものである。さらに詳しくはシリコンウェハ等の半導体装置を製造するにあたりウェハ等を固定し、ダイシングし、さらにリードフレームや半導体チップと重ね合わせるための接着工程に使用される半導体ウェハ用ダイシング−ダイボンド用粘接着テープに関するものである。
【０００２】
【従来の技術】
ＩＣなどの半導体装置の組立工程において、ウェハ等を固定し、ダイシングし、さらにリードフレームや半導体チップと重ね合わせるための接着工程に使用される、粘接着材層と基材フィルム層が剥離可能に構成される熱硬化性半導体ウェハ用ダイシング−ダイボンド用粘接着テープ（以下、ダイシング−ダイボンド用粘接着テープという）が種々提案されている（例えば、特許文献１及び２）。
上記特許文献に開示されている粘接着テープは、ダイシング後、チップ裏面に粘接着剤層を貼りつけた状態で基材フィルムから剥離し、リードフレーム等に接着した後加熱などにより硬化接着させるものであるため、粘接着剤層と基材フィルムとの間は剥離容易に積層されている。
一方、一般的に通常の粘着テープに用いられる基材フィルムは、粘着剤層の密着性を良好なものとするために、表面処理が行われている。具体的にはコロナ放電、低圧水銀灯等を用いた表面処理装置を利用し、照射されるエネルギーによって生成されるオゾンにより基材表面を酸化させて基材フィルムの表面改質を行うか、もしくは基材フィルム表面にプライマーと呼ばれる粘接着層との密着性を強固にするための材料を塗布する。
しかし、上記特許文献に記載されているダイシング−ダイボンド用粘接着テープはウェハ貼合部分となる粘接着剤層を基材フィルムから剥離容易とするためにこの表面改質を行わないのが特徴である。
【０００３】
そのため、ダイシング時にウェハの固定用として繰り返し用いられる治具（例えばダイシングフレーム）への粘接着剤層の粘接着剤の転着（粘接着剤の一部又は全部が被着体から完全に剥離せず被着体に残ることをいう）が発生する問題がある。また、粘接着剤の転着を防止するための対策として、転着防止を目的とした別の粘着テープを所定の形状に加工して貼り合わせる等の方法が挙げられるが、原料費、加工費ともにコストのかかるものであった。
【０００４】
【特許文献１】
特開平２−３２１８１号公報
【特許文献２】
特開平８−５３６５５号公報
【０００５】
【発明が解決しようとする課題】
したがって本発明は、ダイシングフレームを貼合する部分において、ダイシングフレームへの粘転着剤の転着がなく、かつ、ウェハ貼合部分においてチップの剥離時に、粘接着剤層と基材フイルム界面で剥離性が優れる、粘接着テープを提供することを目的とする。
【０００６】
【課題を解決するための手段】
上記問題を解決するために鋭意検討した結果、ウェハ貼合部分とダイシングフレーム貼合部分において、基材フィルムの表面処理を異なる条件とすることにより、ウェハ貼合部分についてはチップの剥離時に粘接着剤層と基材フィルム界面で剥離でき、かつダイシングフレーム部分では粘接着層とダイシングフレーム界面で剥離可能である粘接着テープを同一の粘接着剤層で構成することが可能であることを見出し、この知見に基づき本発明をなすに至った。
すなわち本発明は、
（１）基材フィルムの少なくとも片面に粘接着剤層を設け、粘接着剤層側にセパレータを設けてなる、半導体装置を製造する接着工程に使用される半導体ウェハダイシング−ダイボンド用粘接着テープであって、該粘接着剤は単一の層を構成しており、かつ粘接着剤層と基材フィルム層が剥離可能に構成され被着体に容易に転着する部分と粘接着剤層と基材フィルム層が剥離困難で被着体に転着しない部分とを有して構成されていることを特徴とする粘接着テープ、
（２）基材フィルムの少なくとも片面に粘接着剤層を設け、粘接着剤層側にセパレータを設けてなる、半導体装置を製造する接着工程に使用される半導体ウェハダイシング−ダイボンド用粘接着テープにおいて、該粘接着剤は単一の層を構成しており、粘接着剤の破壊エネルギーが１００００Ｎ／ｍ以上で、かつ粘接着剤層と基材フィルム層が、剥離可能に構成され被着体に容易に転着する部分と剥離困難で被着体に転着しない部分とを有して構成されていることを特徴とする粘接着テープ、及び、
（３）基材フィルムの少なくとも片面に粘接着剤層を設け、粘接着剤層側にセパレータを設けてなる、半導体装置を製造するに接着工程に使用される半導体ウェハダイシング−ダイボンド用粘接着テープにおいて、該粘接着テープに使用される基材フィルムの粘接着剤と接する表面に互いに離間して表面処理を施していない部分を設けたことを特徴とする（１）又は（２）項に記載の粘接着テープ、を提供するものである。
本発明で半導体装置とは、ＩＣ等、半導体チップをリードフレーム等の支持部材に接着し、樹脂封止したものなどをいう。
【０００７】
【発明の実施の形態】
本発明は、粘接着テープにおいて、粘接着剤を塗布する前に基材フィルムにあらかじめ粘接着剤層と基材フィルムとの間の密着性の異なる（表面処理の有無や、処理の程度などによる）部分を設けておき、その後粘接着剤層を塗布することで、ウェハ貼合部分については剥離時に前記テープの粘接着剤層と基材フィルムとの界面で剥離でき、かつダイシングフレーム部分では粘接着層とダイシングフレームとの界面で剥離可能とする粘接着テープ及びその製造方法に関するものである。
本発明は、粘接着テープに用いる基材フィルムの表面エネルギーを、ウェハを貼合する部分とダイシングフレームを貼合する部分で異なるようにする。このように表面エネルギーの異なるものとすることにより、ウェハ貼合部分では粘接着剤層と基材フィルムの界面で剥離可能であり、ダイシングフレーム貼合部分では粘接着剤層とダイシングフレームの界面での剥離が可能でかつダイシングフレームを汚染せず、作業性よく生産可能となる。
ここで表面エネルギーは表面と粘接着剤の接着性の尺度として用いる。表面エネルギーは、接着性を直接測定できるものではないが、粘着剤の分野においては表面エネルギーと接着性の関係は経験的に知られており、基材フィルムの表面エネルギーが低い程、粘接着性が低くなる。
【０００８】
本発明の具体的な実施の形態としては、粘接着テープに使用する基材フィルムにおいて、ウェハが貼合される部分の基材フィルム面を除いて粘接着剤層の密着性を付与する表面処理を施し、該基材フィルム上に粘接着剤層を形成することにより行われる。
図１にこのようにして得られた基材フィルム１の状態を示す。図中２が基材フィルム１上の非表面処理部、３は表面処理部である。３はウェハが貼合される部分を示し、４はダイシングフレームを貼合する部分（一点鎖線で示すリング状の部分）である。ダイシングフレームはＡのようにリング内側が表面処理部と非表面処理部の境界とぴったり一致していてもよいし、Ｂのように、リング内側の径が非表面処理部より大径で、表面処理部に乗っている態様でもよい。
一般に基材フィルムとして用いるポリエチレンなどのオレフィン系樹脂は、表面処理を施さない状態での表面エネルギーが約３０ｍＮ／ｍであり、粘接着剤層が容易に剥離できるものであるが、表面処理により５０ｍＮ／ｍ以上とすることが可能である。通常本発明においては基材フィルムに対し、表面処理していない場合に比べ、表面処理により表面エネルギーを１０ｍＮ／ｍ以上高くするのが好ましく、より好ましくは１５ｍＮ／ｍ〜２０ｍＮ／ｍだけ高くする。ダイシングフレームは、材質や表面処理により異なるが約４０ｍＮ／ｍであり、シリコンウェハは約６０ｍＮ／ｍであり、粘接着剤層は概ね４０〜８０ｍＮ／ｍである。表面エネルギーの評価としては、ＪＩＳ Ｋ ６７６８：１９９９（プラスチック―フィルム及びシート―ぬれ張力試験方法）にて行うことができる。
【０００９】
一方、接着剤層と被着体との接着強さとしては、熱力学的接着仕事を求めることによりその指標とすることができる。熱力学的接着仕事Ｗａは下記の式で求められる。
Ｗａ＝２（γ１・γ２）０．５
（γ１：接着剤の表面エネルギー、γ２：被着体の表面エネルギー）
よって、基材フィルムに表面処理を施すことにより、基材フィルム／粘接着剤の熱力学的接着仕事がダイシングフレーム／粘接着剤の熱力学的接着仕事を上回るため、ダイシングフレームと粘接着剤の貼合面で剥離させることが可能となる。
【００１０】
図２に本発明のダイシング−ダイボンド粘接着テープの使用状態を断面図で模式的に示す。図中、１０がダイシング−ダイボンド用粘接着テープを示し、１１は図１に示すような、表面処理をしない部分を残した基材フィルム、１２は粘着剤層、１３はダイシングした半導体チップ群であり、前記の基材フィルム１１の非表面処理部に対応した位置に接着されている。１４はダイシング溝を示す。図中１５は、半導体チップ１３が下面に接着剤１２が付着して、基材フィルム１１から剥離してピック・アップされた半導体を示す。１６はダイシングフレームである。
【００１１】
本発明において、粘接着剤層と被着体の界面で剥離させるためには、粘接着剤の破壊エネルギーが、１００００Ｎ／ｍ以上であることが好ましく、１５０００Ｎ／ｍ以上であることがより好ましい。破壊エネルギーが低すぎると、剥離時に粘接着剤が凝集破壊してしまい、粘接着剤層の一部が被着体に残る場合があるからである。
この、粘接着剤の破壊エネルギーは、粘接着剤の引張試験（ＪＩＳ Ｚ０２３７−２０００）にて測定したデータを元に求めたものである。この方法において破断点まで伸張させたときに得られる曲線の積分値（曲線とベースラインに囲まれる面積に相当する）が粘接着剤の破壊エネルギーである。
また、基材フィルムの表面処理方法（易接着処理方法）としては、コロナ放電、低圧水銀灯等のエネルギー線を用いた表面処理装置を利用する方法が挙げられる。通常、基材フィルムの表面処理は、ロール状に巻かれたフィルムを一次元的に配置されたエネルギー線源に対して垂直方向に一定速度で繰り出して行うことで行われる。
【００１２】
本発明に用いられる基材フィルムへの表面処理法は、上記の方法を利用して行うことができるが、基材フィルムの特定の面がエネルギー線に曝されないように遮蔽物を設けることにより、表面処理を施さない部分を設ける方法によって行われる。
このような表面処理法としては、基材フィルムを部分的かつ基材フィルムの長さ方向に対して断続的に表面処理を施さない部分を設けることが可能であれば限定されるものではないが、具体例としては、基材フィルムを繰り出す速度と連動して遮蔽面積を変更可能な遮蔽物を設けてエネルギー線を遮蔽する方法や、基材フィルムを繰り出す速度と連動してエネルギー線が照射される面積を変更することにより行うこと等が挙げられる。
【００１３】
基材フィルムに表面処理がなされないように遮蔽する各部分の面積は、テープ加工時や貼合時のずれを考慮して、被着体であるシリコンウェハの外径より大きく、ダイシングフレームの切り抜き部分（内径）より小さくすることが好ましい。 なお、通常シリコンウェハ及びダイシングフレームの切抜き部分は円形であるが、表面処理の工程等簡略化等の理由により必ずしも円形である必要は無く、シリコンウェハに貼合する部分は上記の表面処理が施されておらず、ダイシングフレームに貼合する部分が表面処理されていれば、その形状、及び表面処理範囲は限定されない。
なお、基材フィルムの表面処理の有無については、目視で確認することができないので、例えば基材フィルム面に表面処理状態が確認できるようにマーキングを施すことができる。マーキング方法については、例えばインクジェットやレーザー等のマーキング装置を使用して、フィルムの繰り出しと遮蔽物の動きに連動して印字する方法などが挙げられる。このマーキングをもとに、シリコンウェハやダイシングフレームを所定の位置に貼合することが可能である。
【００１４】
なお本発明に用いる基材フィルムとして、表面を表面処理部と非表面処理部とに区分した例を示したが（図１参照）、表面処理してあっても、表面処理の程度により基材フィルム上に粘接着剤に対する密着性が他の部分より十分に低い部分が形成されていればよい。したがって２種類の表面処理部があり、両者の間の粘接着剤に対する密着性が異なるという態様でもよい。
本発明に用いられる基材フィルムとしては、公知のものを使用することができるが、カルボキシル基、水酸基等の極性基を有していないものが好適に用いられる。例えば、ポリエチレン、ポリプロピレン、エチレン−プロピレン共重合体、ポリブテンなどのα−オレフィンの単独重合体または共重合体、スチレン−エチレン−ブテンもしくはペンテン系共重合体等の熱可塑性エラストマーが挙げられ、これらの群から選ばれる２種以上が混合されたものもしくは複層化されたものでもよい。なお、複層で用いる場合には粘接着剤層と接触する部分が上記の樹脂から選ばれるものであればその他の層は上記樹脂に限定されるものではなく、上記樹脂とのアクリル酸共重合体やアイオノマー等極性基を有する樹脂、あるいはポリエチレンテレフタレート、ポリイミド、ポリカーボネート、ポリメタクリル酸メチル等のエンジニアリングプラスチック、またはポリウレタン、等を用いることができる。
基材フィルムの厚みは特に制限はないが、５０〜２００μｍが好ましく用いられる。
【００１５】
また、本発明に用いる粘接着剤については、
（１）エチルアクリレート、ブチルアクリレート、２−エチルヘキシルアクリレート、ラウリルアクリレートから１種類もしくは複数種と、アクリル酸もしくはメタクリル酸、２−ヒドロキシエチルアクリレートを主成分とした共重合体と、エチルアクリレート、ブチルアクリレート、２−エチルヘキシルアクリレート、ラウリルアクリレートから１種類もしくは複数種と、グリシジルメタクリレート、２−ヒドロキシエチルアクリレートを主成分とした共重合体の混合物もしくはそれらの架橋物
（２）エチルアクリレート、ブチルアクリレート、２−エチルヘキシルアクリレート、ラウリルアクリレートから１種類もしくは複数種と、アクリル酸、もしくはメタクリル酸、２−ヒドロキシエチルアクリレートを主成分とした共重合体と、エポキシ樹脂の混合物
など公知の粘接着剤が挙げられるが、上に挙げられる例に限定されるものではなが、前述のとおり粘接着剤の破壊エネルギーが１００００Ｎ／ｍ以上であることが好ましい。
粘接着剤層の乾燥時の厚さはチップのサイズ、チップの積層枚数などによって異なるが、好ましくは２〜５０μｍ、より好ましくは５〜３０μｍである。
【００１６】
また、放射線硬化性粘着剤を紫外線照射によって硬化させる場合には必要に応じて、光重合開始剤、例えばイソプロピルベンゾインエーテル、イソブチルベンゾインエーテル、ベンゾフェノン、ミヒラーズケトン、クロロチオキサントン、ドデシルチオキサントン、ジメチルチオキサントン、ジエチルチオキサントン、ベンジルジメチルケタール、α−ヒドロキシシクロヘキシルフェニルケトン、２−ヒドロキシメチルフェニルプロパン等を使用することができる。これら光重合開始剤の配合量はアクリル系共重合体１００重量部に対して０．０１〜５重量部が好ましい。
上記粘接着剤には、ダイボンド後の導電性、熱伝導性の付与を目的として金属製微粉末やその他導電性もしくは熱伝導性に優れる材料を添加することも可能である。
また、上記粘接着剤には、熱安定性向上を目的として金属酸化物やガラス等の微粉末を添加することも可能である。
【００１７】
本発明のダイシング−ダイボンド用粘接着テープは、ウェハ等を固定し、ダイシングし、さらにリードフレームや半導体チップと重ね合わせるための接着工程に使用される。
【００１８】
【実施例】
次に、本発明を実施例に基づき、更に詳細に説明する。尚、以下の各例中での特性は、次のように試験した。
（イ）粘接着剤の剥離性評価
後記の実施例及び比較例の粘接着テープ（２５０ｍｍ×３００ｍｍ）をダイシングフレーム（ディスコ製ＤＴＦ２−６−１）及び６インチシリコンウェハ＃２０００研磨面に貼合し、テープを２５ｍｍ幅に切断し、１時間放置後紫外線を照射した後、シリコンウェハ貼合面、ダイシングフレーム貼合面それぞれの剥離力を測定した。
なお、剥離力は剥離角度９０゜、剥離速度５０ｍｍ／ｍｉｎにて行った。紫外線照射量は高圧水銀灯で２００ｍＪ／ｃｍ２とした。
また、粘接着剤の被着体への転着の有無を目視にて確認した。
【００１９】
評価基準は次のとおりである。
（対シリコンウェハ面）
シリコンウェハに粘接着層剤が転写されたもの・・・・・・・○
シリコンウェハに粘接着層剤が転写されないもの・・・・・・×
（対ダイシングフレーム面）
ダイシングフレームに粘接着剤の糊残りがあったもの・・・×
ダイシングフレームに念接着剤の糊残りが無いもの・・・・○
（ロ）粘接着剤層の破壊エネルギー
粘接着剤層を基材フィルムから剥がし、２５ｍｍ幅×１００μｍ厚さ×１５０ｍｍ長さに加工し、高圧水銀灯で２００ｍＪ／ｃｍ２照射したサンプルについて、引張速度３００ｍｍ／ｍｉｎにて引張試験を行い、破壊エネルギーを測定した。
【００２０】
参考例１
（粘接着剤の調製）
粘接着剤１
エチルアクリレート、メタクリル酸、２−ヒドロキシエチルアクリレートがモル比で８０：５：１５からなる重量平均分子量２３万のアクリル系共重合体に２−イソシアネートエチルメタクリレートを２−ヒドロキシエチルアクリレートに対してモル比で６０％付加反応させた紫外線硬化性アクリル系共重合体１００重量部とエチルアクリレート、グリシジルメタクリレート、２−ヒドロキシエチルアクリレートがモル比で８０：１０：１０からなる重量平均分子量１４万のアクリル系共重合体に２−イソシアネートエチルメタクリレートを２−ヒドロキシエチルアクリレートに対してモル比で６０％付加反応させた紫外線硬化性アクリル系共重合体１００重量部を混合し、アクリル系粘接着剤を得た。この粘接着剤の破壊エネルギーは２２１５３Ｎ／ｍであった。
粘接着剤２
粘接着剤１のアクリル系粘接着剤１００質量部とエポキシ樹脂としてビスフェノールＡ型エポキシ樹脂（ジャパンエポキシレジン（株）製エピコート１００２）３００質量部を混合して粘接着剤を得た。この粘接着剤の破壊エネルギーは７４４０Ｎ／ｍであった。
【００２１】
参考例２
（基材フィルムの調製）
基材フィルム１
厚さ１００μｍの高密度ポリエチレン製基材フィルム（表面エネルギー３０ｍＮ／ｍ、２５０ｍｍ×３００ｍｍ）に直径１７０ｍｍ（６インチウェハを想定）のコロナ処理を施こされていない部分を設けるようにコロナ処理を行い作成した。このもののコロナ処理部の表面エネルギーは４５ｍＮ／ｍであった。
基材フィルム２
厚さ１００μｍの高密度ポリエチレン製基材フィルム（２５０ｍｍ×３００ｍｍ）全面にコロナ処理を施し表面エネルギー４５ｍＮ／ｍのフィルムを作成した。
基材フィルム３
基材フィルム１で用いた厚さ１００μｍの高密度ポリエチレン製基材フィルム（２５０ｍｍ×３００ｍｍ）にコロナ処理を施さず作成した。
【００２２】
実施例１
基材フィルム１に粘接着剤１を乾燥時の厚さ２０μｍになるよう塗工して粘接着テープを得た。
実施例２
基材フィルム１に粘接着剤２を乾燥時の厚さが２０μｍになるよう塗工して粘接着テープを得た。
比較例１
基材フィルム２に粘接着剤１を乾燥時の厚さ２０μｍになるよう塗工して粘接着テープを得た。
比較例２
基材フィルム２に粘接着剤２を乾燥時の厚さ２０μｍになるよう塗工して粘接着テープを得た。
比較例３
基材フィルム３に粘接着剤１を乾燥時の厚さ２０μｍになるよう塗工して粘接着テープを得た。
比較例４
基材フィルム３に粘接着剤２を乾燥時の厚さ２０μｍになるよう塗工して粘接着テープを得た。
前記の方法で各粘接着テープを試験し、その結果を下記表１に示した。
【００２３】
【表１】

Figure 2004281561
【００２４】
上記表１の結果より明らかなように、実施例はフラットフレームに粘接着剤の転着がなく剥離でき、シリコンウェハに転着させることができたが、比較例はフレーム、シリコンウェハともに転着したり、糊残りが見られ良好な結果を得ることができなかった。
【００２５】
【発明の効果】
本発明のダイシング−ダイボンド用粘接着テープは、ダイシングの際にはダイシングテープとして使用でき、マウントの際には接着剤として使用できるダイシング−ダイボンド用粘接着テープであって、ダイシングフレームを貼合する部分に転着防止層を設ける必要が無く、ピック・アップ時にはチップ裏面に粘接着剤層を転着して剥離できる。また本発明によれば、ダイシングフレームに粘接着剤が貼着しないテープを作業性良く提供することが可能となる。
【図面の簡単な説明】
【図１】本発明に用いられる基材フィルムの好ましい態様を示す斜視図である。
【図２】本発明の粘接着テープの使用状態を示す模式的断面図である。
【符号の説明】
１ 基材フィルム
２ 非表面処理部
３ 表面処理部
４ ダイシングフレーム貼合部
１０ ダイシング−ダイボンド用粘接着テープ
１１ 基材フィルム
１２ 粘接着剤層
１３ 半導体チップ
１４ ダイシング溝
１５ 半導体チップ＋粘接着剤層
１６ ダイシングフレーム[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate film used for an adhesive tape having a pressure-sensitive adhesive layer provided on at least one surface of a substrate film and a normal separator provided on the pressure-sensitive adhesive layer side. More specifically, in the manufacture of a semiconductor device such as a silicon wafer, a wafer is fixed and diced, and a dicing for a semiconductor wafer is used in a bonding process for overlapping with a lead frame or a semiconductor chip. It is about.
[0002]
[Prior art]
In the process of assembling semiconductor devices such as ICs, the adhesive layer and base film layer can be peeled, which is used in the bonding process for fixing wafers, dicing, and superimposing with lead frames and semiconductor chips. Various types of thermosetting semiconductor wafer dicing-die bonding adhesive tapes (hereinafter referred to as dicing-die bonding adhesive tapes) have been proposed (for example, Patent Documents 1 and 2).
After dicing, the adhesive tape disclosed in the above patent document is peeled off from the substrate film in a state where the adhesive layer is attached to the back surface of the chip, is adhered to a lead frame, etc., and then is cured and adhered by heating or the like. Therefore, the adhesive layer and the base material film are easily laminated.
On the other hand, a base film generally used for an ordinary pressure-sensitive adhesive tape is subjected to a surface treatment in order to improve the adhesiveness of the pressure-sensitive adhesive layer. Specifically, a surface treatment device using a corona discharge, a low-pressure mercury lamp, or the like is used to oxidize the surface of the substrate with ozone generated by irradiation energy, thereby modifying the surface of the substrate film, or A material called a primer is applied to the surface of the material film to strengthen the adhesion to the adhesive layer.
However, the dicing-adhesive tape for dicing and die-bonding described in the above-mentioned patent document does not perform this surface modification in order to make the adhesive layer serving as a wafer bonding portion easy to peel off from the base film. It is a feature.
[0003]
Therefore, transfer of the adhesive of the adhesive layer to a jig (for example, a dicing frame) that is repeatedly used for fixing the wafer during dicing (part or all of the adhesive is completely removed from the adherend). Is not removed but remains on the adherend). Further, as a measure for preventing the transfer of the adhesive, there is a method of processing another adhesive tape for the purpose of preventing the transfer into a predetermined shape and bonding it. Both costs were expensive.
[0004]
[Patent Document 1]
JP-A-2-32181 [Patent Document 2]
JP-A-8-53655
[Problems to be solved by the invention]
Therefore, the present invention provides a method for bonding a dicing frame to a dicing frame in which no sticking agent is transferred to the dicing frame, and when the chips are peeled off at the wafer bonding portion, the interface between the adhesive layer and the base film is removed. It is an object of the present invention to provide a pressure-sensitive adhesive tape having excellent peelability.
[0006]
[Means for Solving the Problems]
As a result of intensive studies to solve the above problem, the wafer bonding part and the dicing frame bonding part were subjected to different conditions for the surface treatment of the base material film. An adhesive tape that can be peeled off at the interface between the adhesive layer and the base film and that can be peeled off at the interface between the adhesive layer and the dicing frame in the dicing frame portion can be composed of the same adhesive layer. This led to the present invention based on this finding.
That is, the present invention
(1) Adhesive bonding for semiconductor wafer dicing-die bonding used in an adhesive process for manufacturing a semiconductor device, comprising: providing an adhesive layer on at least one surface of a base film and providing a separator on the adhesive layer side. A pressure-sensitive adhesive tape, wherein the pressure-sensitive adhesive forms a single layer, and the pressure-sensitive adhesive layer and the base film layer are configured to be peelable and easily transferred to an adherend. Adhesive tape characterized by having an adhesive layer and a portion where the base film layer is difficult to peel off and does not transfer to an adherend,
(2) Semiconductor wafer dicing-adhesive bonding for die bonding used in a bonding process for manufacturing a semiconductor device, comprising: providing an adhesive layer on at least one surface of a base film and providing a separator on the adhesive layer side. In the adhesive tape, the adhesive forms a single layer, the breaking energy of the adhesive is 10,000 N / m or more, and the adhesive layer and the base film layer are peelable. Adhesive tape characterized by having a portion that is configured and easily transferred to the adherend and a portion that is difficult to peel and does not transfer to the adherend, and
(3) A semiconductor wafer dicing-die bonding adhesive used in an adhesive process for manufacturing a semiconductor device, comprising a substrate film provided with an adhesive layer on at least one surface and a separator provided on the adhesive layer side. (1) or (1) or (2), wherein in the adhesive tape, portions of the base film used for the adhesive tape which are in contact with the adhesive are provided with portions which are separated from each other and are not subjected to surface treatment. An adhesive tape according to the item 2) is provided.
In the present invention, a semiconductor device refers to an IC or the like in which a semiconductor chip is bonded to a support member such as a lead frame and sealed with a resin.
[0007]
BEST MODE FOR CARRYING OUT THE INVENTION
The present invention relates to a pressure-sensitive adhesive tape, in which the adhesiveness between the pressure-sensitive adhesive layer and the substrate film is different in advance before applying the pressure-sensitive adhesive (the presence or absence of surface treatment, By applying a pressure-sensitive adhesive layer after that, the wafer bonding portion can be peeled at the interface between the pressure-sensitive adhesive layer of the tape and the base film at the time of peeling, and The present invention relates to a pressure-sensitive adhesive tape capable of being peeled off at an interface between a pressure-sensitive adhesive layer and a dicing frame in a dicing frame portion, and a method for manufacturing the same.
According to the present invention, the surface energy of the base film used for the adhesive tape is made different between the portion where the wafer is bonded and the portion where the dicing frame is bonded. By making the surface energy different in this way, it is possible to peel off at the interface between the adhesive layer and the base film at the wafer bonding part, and at the dicing frame bonding part, the adhesive layer and the dicing frame are separated. Peeling at the interface is possible, the dicing frame is not contaminated, and production can be performed with good workability.
Here, the surface energy is used as a measure of the adhesion between the surface and the adhesive. Although the surface energy cannot directly measure the adhesive property, the relationship between the surface energy and the adhesive property is empirically known in the field of pressure-sensitive adhesives. Is less effective.
[0008]
As a specific embodiment of the present invention, in the base film used for the adhesive tape, the adhesive property of the adhesive layer is imparted except for the base film surface of the portion where the wafer is bonded. The surface treatment is performed to form an adhesive layer on the base film.
FIG. 1 shows the state of the base film 1 thus obtained. In the figure, reference numeral 2 denotes a non-surface treated portion on the base film 1, and 3 denotes a surface treated portion. Reference numeral 3 denotes a portion where the wafer is bonded, and reference numeral 4 denotes a portion where the dicing frame is bonded (a ring-shaped portion indicated by a chain line). In the dicing frame, the inside of the ring may exactly match the boundary between the surface-treated portion and the non-surface-treated portion, as in A, or the diameter of the ring inside may be larger than the non-surface-treated portion, as in B, A mode in which the robot is on the processing unit may be used.
Generally, an olefin resin such as polyethylene used as a base film has a surface energy of about 30 mN / m without surface treatment, and the adhesive layer can be easily peeled off. It can be 50 mN / m or more. Generally, in the present invention, it is preferable to increase the surface energy by 10 mN / m or more by surface treatment, more preferably by 15 mN / m to 20 mN / m, as compared with the case where the surface treatment is not performed. The dicing frame varies depending on the material and surface treatment, but is about 40 mN / m, the silicon wafer is about 60 mN / m, and the adhesive layer is about 40 to 80 mN / m. The evaluation of the surface energy can be performed according to JIS K 6768: 1999 (plastic-film and sheet-wet tension test method).
[0009]
On the other hand, the bond strength between the adhesive layer and the adherend can be used as an index by obtaining thermodynamic bonding work. The thermodynamic bonding work Wa is obtained by the following equation.
Wa = 2 (γ 1 · γ 2 ) 0.5
(Γ 1 : surface energy of adhesive, γ 2 : surface energy of adherend)
Therefore, by performing the surface treatment on the base film, the thermodynamic bonding work of the base film / adhesive is greater than the thermodynamic bonding work of the dicing frame / adhesive. It becomes possible to peel off at the bonding surface of the adhesive.
[0010]
FIG. 2 is a cross-sectional view schematically showing a use state of the dicing-die bond adhesive tape of the present invention. In the drawing, reference numeral 10 denotes a dicing-die-bonding adhesive tape, 11 denotes a substrate film having a portion not subjected to surface treatment as shown in FIG. 1, 12 denotes an adhesive layer, and 13 denotes a diced semiconductor chip group. And is bonded at a position corresponding to the non-surface-treated portion of the base film 11. Reference numeral 14 denotes a dicing groove. In the drawing, reference numeral 15 denotes a semiconductor in which the semiconductor chip 13 has the adhesive 12 adhered to the lower surface thereof, is separated from the base film 11, and is picked up. Reference numeral 16 denotes a dicing frame.
[0011]
In the present invention, in order to peel at the interface between the adhesive layer and the adherend, the breaking energy of the adhesive is preferably 10,000 N / m or more, more preferably 15,000 N / m or more. preferable. If the breaking energy is too low, the adhesive is cohesively broken at the time of peeling, and a part of the adhesive layer may remain on the adherend.
The breaking energy of the adhesive is obtained based on data measured by a tensile test (JIS Z0237-2000) of the adhesive. In this method, the integral value of the curve (corresponding to the area surrounded by the curve and the baseline) obtained when the film is stretched to the breaking point is the breaking energy of the adhesive.
Examples of the surface treatment method (easy adhesion treatment method) for the base film include a method using a surface treatment device using an energy ray such as corona discharge and a low-pressure mercury lamp. Usually, the surface treatment of the base film is performed by feeding a film wound in a roll shape at a constant speed in a direction perpendicular to an energy ray source arranged one-dimensionally.
[0012]
The surface treatment method for the base film used in the present invention can be performed by using the above method, but by providing a shield so that a specific surface of the base film is not exposed to energy rays, It is performed by a method of providing a portion not subjected to surface treatment.
Such a surface treatment method is not limited as long as it is possible to provide a portion where the surface treatment is not performed partly and intermittently in the length direction of the substrate film. As a specific example, a method of shielding energy rays by providing a shield capable of changing a shielding area in conjunction with the speed at which the base film is fed out, or irradiation with energy rays in conjunction with the speed at which the base film is fed out is performed. And the like by changing the area.
[0013]
The area of each part that shields the base film so that surface treatment is not performed is larger than the outer diameter of the silicon wafer that is the adherend, taking into account the deviation during tape processing and bonding, and cutting out the dicing frame It is preferable to make it smaller than the part (inner diameter). Although the cutout portions of the silicon wafer and the dicing frame are usually circular, they are not necessarily circular for reasons such as simplification of the surface treatment process, and the portion to be bonded to the silicon wafer is subjected to the above surface treatment. The shape and the surface treatment range are not limited as long as the part to be bonded to the dicing frame has been surface-treated.
In addition, since the presence or absence of the surface treatment of the substrate film cannot be visually confirmed, for example, marking can be performed on the surface of the substrate film so that the surface treatment state can be confirmed. The marking method includes, for example, a method of printing by using a marking device such as an ink jet or a laser in conjunction with the feeding of the film and the movement of the shield. Based on this marking, a silicon wafer or a dicing frame can be bonded at a predetermined position.
[0014]
Although an example in which the surface is divided into a surface-treated portion and a non-surface-treated portion is shown as the substrate film used in the present invention (see FIG. 1), even if the surface is treated, depending on the degree of the surface treatment, It suffices that a portion having sufficiently lower adhesion to the adhesive than the other portion is formed on the film. Therefore, there may be a mode in which there are two types of surface treatment sections and the adhesion between the two is different from the adhesive.
As the substrate film used in the present invention, a known film can be used, but a film having no polar group such as a carboxyl group or a hydroxyl group is preferably used. For example, polyethylene, polypropylene, ethylene-propylene copolymer, homo- or copolymers of α-olefins such as polybutene, thermoplastic elastomers such as styrene-ethylene-butene or pentene copolymers, and the like. It may be a mixture of two or more selected from the group or a multi-layered one. In the case of using a plurality of layers, other layers are not limited to the above-mentioned resin as long as the portion in contact with the adhesive layer is selected from the above-mentioned resins. A resin having a polar group such as a polymer or an ionomer, an engineering plastic such as polyethylene terephthalate, polyimide, polycarbonate, or polymethyl methacrylate, or polyurethane can be used.
The thickness of the substrate film is not particularly limited, but is preferably 50 to 200 μm.
[0015]
Further, regarding the adhesive used in the present invention,
(1) One or more of ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, and lauryl acrylate, a copolymer containing acrylic acid, methacrylic acid, and 2-hydroxyethyl acrylate as main components, and ethyl acrylate and butyl acrylate , 2-ethylhexyl acrylate, lauryl acrylate, or a mixture of glycidyl methacrylate, a copolymer containing 2-hydroxyethyl acrylate as a main component or a crosslinked product thereof (2) ethyl acrylate, butyl acrylate, One or more of ethylhexyl acrylate and lauryl acrylate, and a copolymer containing acrylic acid, methacrylic acid, or 2-hydroxyethyl acrylate as a main component; Known adhesives such as a mixture of xy-resins may be mentioned, but are not limited to the examples given above, but the breaking energy of the adhesive is preferably 10,000 N / m or more as described above. .
The dry thickness of the adhesive layer depends on the size of the chip, the number of stacked chips, and the like, but is preferably 2 to 50 μm, and more preferably 5 to 30 μm.
[0016]
When the radiation-curable pressure-sensitive adhesive is cured by ultraviolet irradiation, if necessary, a photopolymerization initiator, for example, isopropylbenzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone , Benzyldimethyl ketal, α-hydroxycyclohexylphenyl ketone, 2-hydroxymethylphenylpropane, and the like. The amount of the photopolymerization initiator is preferably 0.01 to 5 parts by weight based on 100 parts by weight of the acrylic copolymer.
It is also possible to add a fine metal powder or other material having excellent conductivity or heat conductivity to the adhesive agent for the purpose of imparting conductivity and heat conductivity after die bonding.
It is also possible to add a fine powder such as a metal oxide or glass to the above-mentioned adhesive for the purpose of improving thermal stability.
[0017]
The dicing-die bonding adhesive tape of the present invention is used in a bonding step for fixing a wafer or the like, dicing, and further superimposing on a lead frame or a semiconductor chip.
[0018]
【Example】
Next, the present invention will be described in more detail based on examples. The characteristics in the following examples were tested as follows.
(A) Evaluation of Adhesive Release Property Adhesive tapes (250 mm × 300 mm) of the following Examples and Comparative Examples were applied to a dicing frame (DTF 2-6-1 manufactured by Disco) and a polished surface of a 6-inch silicon wafer # 2000. After bonding, the tape was cut to a width of 25 mm, left standing for 1 hour and irradiated with ultraviolet rays, and then the peeling force of each of the silicon wafer bonding surface and the dicing frame bonding surface was measured.
The peeling was performed at a peeling angle of 90 ° and a peeling speed of 50 mm / min. The amount of ultraviolet irradiation was 200 mJ / cm 2 using a high-pressure mercury lamp.
In addition, the presence or absence of transfer of the adhesive to the adherend was visually confirmed.
[0019]
The evaluation criteria are as follows.
(To silicon wafer surface)
Silicone wafer with adhesive layer transferred to it ...
Those whose adhesive layer is not transferred to the silicon wafer ... ×
(Dicing frame surface)
Dicing frame with adhesive residue left on the dicing frame ... ×
Dicing frame with no adhesive residue left on the dicing frame ...
(B) peeling the breaking energy adhesive layer of the adhesive layer from the base film, was processed into a 25mm width × 100 [mu] m thickness × 150 mm in length, for samples 200 mJ / cm 2 irradiated with a high pressure mercury lamp, tensile A tensile test was performed at a speed of 300 mm / min, and the breaking energy was measured.
[0020]
Reference Example 1
(Preparation of adhesive)
Adhesive 1
Ethyl acrylate, methacrylic acid, 2-hydroxyethyl acrylate in a molar ratio of 80: 5: 15 in an acrylic copolymer having a weight average molecular weight of 230,000 and 2-isocyanatoethyl methacrylate in a molar ratio to 2-hydroxyethyl acrylate. 100 parts by weight of an ultraviolet-curable acrylic copolymer subjected to an addition reaction at 60% with ethyl acrylate, glycidyl methacrylate, and 2-hydroxyethyl acrylate in a molar ratio of 80:10:10 and a weight-average molecular weight of 140,000. The polymer was mixed with 100 parts by weight of an ultraviolet-curable acrylic copolymer obtained by adding and reacting 2-isocyanatoethyl methacrylate with 2-hydroxyethyl acrylate at a molar ratio of 60% to obtain an acrylic adhesive agent. . The breaking energy of this adhesive was 22153 N / m.
Adhesive 2
100 parts by mass of an acrylic adhesive of the adhesive 1 and 300 parts by mass of a bisphenol A type epoxy resin (Epicoat 1002 manufactured by Japan Epoxy Resin Co., Ltd.) as an epoxy resin were mixed to obtain an adhesive. The breaking energy of this adhesive was 7,440 N / m.
[0021]
Reference Example 2
(Preparation of base film)
Base film 1
A corona treatment is performed so that a high-density polyethylene base film (surface energy: 30 mN / m, 250 mm × 300 mm) having a thickness of 100 μm is provided with a 170 mm diameter (assuming a 6-inch wafer) uncorona treated portion. Created. The surface energy of the corona-treated part was 45 mN / m.
Base film 2
Corona treatment was applied to the entire surface of a high-density polyethylene base film (250 mm × 300 mm) having a thickness of 100 μm to prepare a film having a surface energy of 45 mN / m.
Base film 3
The high-density polyethylene base film (250 mm × 300 mm) having a thickness of 100 μm used in the base film 1 was prepared without performing corona treatment.
[0022]
Example 1
The adhesive 1 was applied to the base film 1 so as to have a dry thickness of 20 μm to obtain an adhesive tape.
Example 2
An adhesive 2 was applied to the base film 1 so that the thickness when dried was 20 μm, to obtain an adhesive tape.
Comparative Example 1
The adhesive 1 was applied to the base film 2 so as to have a dry thickness of 20 μm to obtain an adhesive tape.
Comparative Example 2
The adhesive 2 was applied to the base film 2 so as to have a dry thickness of 20 μm to obtain an adhesive tape.
Comparative Example 3
The adhesive 1 was applied to the base film 3 so as to have a dry thickness of 20 μm to obtain an adhesive tape.
Comparative Example 4
The adhesive 2 was applied to the base film 3 so as to have a dry thickness of 20 μm to obtain an adhesive tape.
Each adhesive tape was tested by the above method, and the results are shown in Table 1 below.
[0023]
[Table 1]
Figure 2004281561
[0024]
As is clear from the results in Table 1 above, in the example, the flat frame could be peeled without transfer of the adhesive and could be transferred to the silicon wafer, but in the comparative example, both the frame and the silicon wafer could be transferred. Good results could not be obtained due to adhesion and adhesive residue.
[0025]
【The invention's effect】
The dicing-die bonding pressure-sensitive adhesive tape of the present invention is a dicing-die bonding pressure-sensitive adhesive tape that can be used as a dicing tape during dicing and can be used as an adhesive during mounting. There is no need to provide an anti-transfer layer at the portion where the adhesive is applied, and at the time of pick-up, the adhesive layer can be transferred to the back surface of the chip and peeled off. Further, according to the present invention, it is possible to provide a tape in which the adhesive does not adhere to the dicing frame with good workability.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a preferred embodiment of a base film used in the present invention.
FIG. 2 is a schematic cross-sectional view showing a use state of the adhesive tape of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Base film 2 Non-surface treatment part 3 Surface treatment part 4 Dicing frame bonding part 10 Adhesive tape for dicing and die bonding 11 Base film 12 Adhesive layer 13 Semiconductor chip 14 Dicing groove 15 Semiconductor chip + adhesive Adhesive layer 16 Dicing frame

Claims (3)

基材フィルムの少なくとも片面に粘接着剤層を設け、粘接着剤層側にセパレータを設けてなる、半導体装置を製造する接着工程に使用される半導体ウェハダイシング−ダイボンド用粘接着テープであって、該粘接着剤は単一の層を構成しており、かつ粘接着剤層と基材フィルム層が剥離可能に構成され被着体に容易に転着する部分と粘接着剤層と基材フィルム層が剥離困難で被着体に転着しない部分とを有して構成されていることを特徴とする粘接着テープ。Providing a pressure-sensitive adhesive layer on at least one surface of the base film, and providing a separator on the pressure-sensitive adhesive layer side, a semiconductor wafer dicing used in the bonding step for manufacturing a semiconductor device-a pressure-sensitive adhesive tape for die bonding. The adhesive comprises a single layer, and the adhesive layer and the base film layer are configured to be peelable, and the adhesive and the portion which is easily transferred to an adherend are adhered. An adhesive tape comprising: an agent layer and a base film layer having a portion that is difficult to peel off and does not transfer to an adherend. 基材フィルムの少なくとも片面に粘接着剤層を設け、粘接着剤層側にセパレータを設けてなる、半導体装置を製造する接着工程に使用される半導体ウェハダイシング−ダイボンド用粘接着テープにおいて、該粘接着剤は単一の層を構成しており、粘接着剤の破壊エネルギーが１００００Ｎ／ｍ以上で、かつ粘接着剤層と基材フィルム層が、剥離可能に構成され被着体に容易に転着する部分と剥離困難で被着体に転着しない部分とを有して構成されていることを特徴とする粘接着テープ。Providing a pressure-sensitive adhesive layer on at least one surface of a base film, and providing a separator on the side of the pressure-sensitive adhesive layer, a semiconductor wafer dicing used in the bonding step of manufacturing a semiconductor device-a pressure-sensitive adhesive tape for die bonding The adhesive comprises a single layer, the adhesive has a breaking energy of 10000 N / m or more, and the adhesive layer and the base film layer are configured to be peelable. A pressure-sensitive adhesive tape comprising a portion that is easily transferred to an adherend and a portion that is difficult to peel and does not transfer to an adherend. 基材フィルムの少なくとも片面に粘接着剤層を設け、粘接着剤層側にセパレータを設けてなる、半導体装置を製造するに接着工程に使用される半導体ウェハダイシング−ダイボンド用粘接着テープにおいて、該粘接着テープに使用される基材フィルムの粘接着剤と接する表面に互いに離間して表面処理を施していない部分を設けたことを特徴とする請求項１又は２に記載の粘接着テープ。A semiconductor wafer dicing-adhesive tape for die bonding used in a bonding process for manufacturing a semiconductor device, comprising a pressure-sensitive adhesive layer provided on at least one surface of a base film and a separator provided on the pressure-sensitive adhesive layer side. 3. The method according to claim 1, wherein a surface of the base film used for the adhesive tape which is in contact with the adhesive is separated from each other and is not subjected to a surface treatment. Adhesive tape.
JP2003068574A 2003-03-13 2003-03-13 Adhesive tape Expired - Lifetime JP4316264B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003068574A JP4316264B2 (en) 2003-03-13 2003-03-13 Adhesive tape

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003068574A JP4316264B2 (en) 2003-03-13 2003-03-13 Adhesive tape

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008270387A Division JP2009065186A (en) 2008-10-20 2008-10-20 Method of controlling adhesive power of base film of adhesive tape and base film for adhesive tape

Publications (2)

Publication Number Publication Date
JP2004281561A true JP2004281561A (en) 2004-10-07
JP4316264B2 JP4316264B2 (en) 2009-08-19

Family

ID=33285863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003068574A Expired - Lifetime JP4316264B2 (en) 2003-03-13 2003-03-13 Adhesive tape

Country Status (1)

Country Link
JP (1) JP4316264B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012670A (en) * 2005-06-28 2007-01-18 Furukawa Electric Co Ltd:The Pressure-sensitive adhesive tape
JP2007109808A (en) * 2005-10-12 2007-04-26 Furukawa Electric Co Ltd:The Adhesive tape for semiconductor wafer dicing die bond
JP2009065186A (en) * 2008-10-20 2009-03-26 Furukawa Electric Co Ltd:The Method of controlling adhesive power of base film of adhesive tape and base film for adhesive tape
JP2010182777A (en) * 2009-02-04 2010-08-19 Furukawa Electric Co Ltd:The Film for processing wafer, and method of manufacturing semiconductor device using the same
JP2012164891A (en) * 2011-02-08 2012-08-30 Hitachi Chem Co Ltd Adhesive sheet for semiconductor, manufacturing method of adhesive sheet for semiconductor, semiconductor wafer, semiconductor device and semiconductor device manufacturing method
JP2013106021A (en) * 2011-11-17 2013-05-30 Shin Etsu Polymer Co Ltd Method for manufacturing dicing frame

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012670A (en) * 2005-06-28 2007-01-18 Furukawa Electric Co Ltd:The Pressure-sensitive adhesive tape
JP2007109808A (en) * 2005-10-12 2007-04-26 Furukawa Electric Co Ltd:The Adhesive tape for semiconductor wafer dicing die bond
JP2009065186A (en) * 2008-10-20 2009-03-26 Furukawa Electric Co Ltd:The Method of controlling adhesive power of base film of adhesive tape and base film for adhesive tape
JP2010182777A (en) * 2009-02-04 2010-08-19 Furukawa Electric Co Ltd:The Film for processing wafer, and method of manufacturing semiconductor device using the same
JP2012164891A (en) * 2011-02-08 2012-08-30 Hitachi Chem Co Ltd Adhesive sheet for semiconductor, manufacturing method of adhesive sheet for semiconductor, semiconductor wafer, semiconductor device and semiconductor device manufacturing method
JP2013106021A (en) * 2011-11-17 2013-05-30 Shin Etsu Polymer Co Ltd Method for manufacturing dicing frame

Also Published As

Publication number Publication date
JP4316264B2 (en) 2009-08-19

Similar Documents

Publication Publication Date Title
TWI385759B (en) Dicing die-bonding film, method of fixing work piece and semiconductor device
JP4107417B2 (en) Tip workpiece fixing method
JP4283596B2 (en) Tip workpiece fixing method
JP4717086B2 (en) Dicing die bond film
JP4717085B2 (en) Dicing die bond film
JP2006203133A (en) Manufacturing method of chip body, manufacturing method of device and adhesive sheet for fixing chip body
JP4790074B2 (en) Dicing die bond film
TWI392005B (en) Dicing/die bonding film
JP2012069586A (en) Dicing die-bonding film, manufacturing method of dicing die-bonding film, and manufacturing method of semiconductor device
WO2013111775A1 (en) Semiconductor device manufacturing method, and adhesive film used in semiconductor device manufacturing method
JP2009135377A (en) Dicing die-bonding film
JP2010056544A (en) Dicing die-bonding film
WO2008032367A1 (en) Dicing/die bonding film
JP2005005355A (en) Dicing die-bonded film
JP2003332267A (en) Method for working semiconductor wafer
JP2011089009A (en) Radiation-curable adhesive composition, adhesive film for dicing using the same and method for producing cut piece
JP2004186429A (en) Adhesive tape
JP4531355B2 (en) Dicing adhesive sheet and method for manufacturing semiconductor element
JP2007012670A (en) Pressure-sensitive adhesive tape
JP2003142433A (en) Dicing adhesive sheet and dicing method
JP5023225B1 (en) Method for manufacturing film for semiconductor device
JP2002203822A (en) Method for processing brittle member and both-side adhesive sheet
JP4316264B2 (en) Adhesive tape
JP5534690B2 (en) Dicing tape
JP2012015432A (en) Dicing die bond film

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051003

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080731

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080819

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081020

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090428

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090520

R151 Written notification of patent or utility model registration

Ref document number: 4316264

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120529

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120529

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130529

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140529

Year of fee payment: 5

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term