JP2004126612A - Liquid crystal display and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the production yield by preventing electric corrosion reaction between a transparent electrode and a reflective electrode in a pixel part of a reflection/transmission dual-type liquid crystal display. <P>SOLUTION: The reflecting part and the transmitting part of the reflection/transmission dual-type liquid crystal display are made of the respective electrode materials. These electrode materials are partly or wholly overlapped in the boundary region between them through an interlayer film. <P>COPYRIGHT: (C)2004,JPO

Description

The present invention relates to a liquid crystal display device used for OA equipment such as a word processor or a personal computer, portable information equipment such as an electronic organizer, or a camera-integrated VTR equipped with a liquid crystal monitor, and a method of manufacturing the same.

In recent years, liquid crystal display devices have been widely used in word processors, personal computers, televisions, video cameras, still cameras, in-vehicle monitors, portable OA devices, portable game machines, etc., taking advantage of their features of being thin and having low power consumption. .

Such a liquid crystal display device includes a transmission type liquid crystal display device using a transparent electrode such as ITO (Indium Tin Oxide) as a pixel electrode and a reflection type liquid crystal display device using a reflection electrode such as a metal as a pixel electrode. There is.

Originally, a liquid crystal display device is not a self-luminous display device that emits light by itself, unlike a CRT (CRT) or EL (electroluminescence) device. An illumination device such as a fluorescent tube, a so-called backlight, is arranged in the display, and display is performed by light incident from the illumination device. In the case of a reflection type liquid crystal display device, display is performed by reflecting external incident light with a reflection electrode.

Here, in the case of a transmissive liquid crystal display device, since a display is performed using a backlight as described above, a display having a high contrast without being affected by the surrounding brightness is performed. However, since the backlight consumes 50% or more of the total power consumption of the liquid crystal display device, there is also a problem that the power consumption increases.

In addition, in the case of a reflective liquid crystal display device, since the backlight is not used as described above, there is an advantage that power consumption can be extremely reduced. Another problem is that the display brightness and contrast are affected by the use conditions.

As described above, the reflection type liquid crystal display device has a drawback that the visibility is extremely reduced in the use environment such as ambient brightness, particularly when the external light is dark. On the other hand, the liquid crystal display device of the type also has a problem that, when the external light is very bright, the visibility in, for example, a clear sky is reduced.

As a means for solving these problems, a liquid crystal display device having both functions of a reflection type and a transmission type has been proposed, for example, in Japanese Patent Application No. 9-201176. The liquid crystal display device proposed by this patent application has a display unit in which a reflective portion that reflects external light and a transmissive portion that transmits light from the backlight are formed in one display pixel. As a transmissive liquid crystal display device that performs display using the light transmitted through the transmissive part from the backlight, and when the external light is dark, a comparison between the light transmitted through the transmissive part from the backlight and the light reflectance As a dual-purpose liquid crystal display device that performs display using both light reflected by a reflective portion formed by a high film, and a film having a relatively high light reflectance when external light is bright. The liquid crystal display device is a transflective liquid crystal display device that can be used as a reflection type liquid crystal display device that performs display using light reflected by a reflection portion.

The liquid crystal display device having such a configuration has always made it possible to provide a liquid crystal display device having excellent visibility regardless of the brightness of external light. In order to realize a color display with high purity, it is necessary to increase the intensity of light scattered in a direction perpendicular to the display screen with respect to incident light from all angles. For that purpose, it is necessary to produce a reflector having an optimal reflection characteristic, and on the surface of a substrate made of glass or the like, forming irregularities controlled so as to have an optimal reflection characteristic, on which, It is necessary to form a reflector having a thin film formed of a metal film or the like.

Examples of the method include, for example, applying a photosensitive resin on a substrate, exposing and developing the photosensitive resin through a light-shielding unit in which circular light-shielding regions are arranged, and then performing a heat treatment, so that a plurality of A convex portion is formed. Then, an insulating protective film is formed on the convex portion along the shape of the convex portion, and a reflector made of a metal thin film is formed on the insulating protective film.

In addition, when the reflection plate is formed outside the substrate (on the side opposite to the liquid crystal layer), which causes double reflection due to the influence of the glass thickness, the reflection plate is formed inside the substrate and also serves as a pixel electrode. The problem is solved by using a structure, that is, a reflective electrode.

In the conventional liquid crystal display device which performs display using reflected light as described above, it is preferable that the reflective electrode is made of a material having a high reflectance, and in that sense, Ag is optimal. However, since Ag is a material having a high diffusion rate into the Si layer, there is a large problem of diffusion into the base and reaction.

On the other hand, Al has a low possibility of diffusion and reaction to the underlayer, is widely used for metallization in integrated circuits, and has good characteristics such as etching conditions. Many. When a reflective electrode is formed by etching such a reflective electrode film of Al, a wet etching method using an etchant composed of nitric acid + acetic acid + phosphoric acid + water as an etchant is applied.

In addition, ITO is often used for the transparent electrode portion and the like in the above-described conventional technology, and in order to remove the photoresist (resist) used in the photolithography technology at this time, an amine-based stripping solution is used. Is used.

Here, the boundary region between the transparent electrode and the reflective electrode in the above-mentioned transflective liquid crystal display device will be briefly described with reference to the drawings. 9 and 10 are cross-sectional views showing a boundary region between a transparent electrode and a reflective electrode in a pixel portion of a conventional liquid crystal display device.

As shown in FIG. 9, a transparent region formed between the transparent electrode ITO2 and the reflective electrode Al4 formed on the substrate 1 is electrically connected to a boundary region between the transparent electrode and the reflective electrode in a pixel portion of the conventional liquid crystal display device. 10 or, as shown in FIG. 10, the transparent electrode ITO2 and the reflective electrode Al4 are electrically connected to each other via another metal film 5 (for example, Mo: molybdenum). In general, it is in a state of contact.

However, it has been found that the following problems occur when ITO and Al are electrically connected as described above.

It is an electrolytic corrosion reaction that occurs between ITO and Al in a water washing process of an amine-based stripping solution for removing a resist when forming a reflective electrode → water washing. This electrolytic corrosion reaction is a reaction that occurs because the amine-based stripping solution that has adhered to the substrate in the stripping tank mixes with water in the washing tank to increase alkalinity. In other words, this is because ITO and Al are immersed in an alkaline solution in a state of being adjacent or in contact with each other, and as a result, the surface of the reflective electrode Al or the transparent electrode ITO2 is corroded (electrode). Eclipse), a problem occurs in that ITO2, which is a transparent electrode, is reduced and blackened.

As described above, in the conventional liquid crystal display device, ITO and Al are corroded and dissolved in the boundary region between the transparent electrode and the reflective electrode in the pixel portion, and this electrolytic corrosion reaction greatly reduces the production yield of the liquid crystal display device. There was a problem of lowering.

The present invention has been made in view of the above-described conventional problems, and an object of the present invention is to provide an electrolytic corrosion reaction between a transparent electrode and a reflective electrode in a pixel portion of a transflective liquid crystal display device. It is an object of the present invention to provide a transflective liquid crystal display device and a method of manufacturing the same, which can easily improve the production yield by preventing the above.

A liquid crystal display device of the present invention for achieving the above-mentioned object has a reflecting portion for reflecting external light and a back surface on one of a pair of substrates disposed opposite to each other with a liquid crystal layer interposed therebetween. In a liquid crystal display device in which a pixel electrode that forms a transmission part for transmitting light from a light source in one pixel is formed, the reflection part and the transmission part are each made of an electrode material. Are characterized in that they are formed in such a manner that part or all of them are overlapped with each other via an interlayer film in a boundary region between them.

That is, according to the liquid crystal display device of the present invention, in the boundary region between the transmission part and the reflection part, the electrode material forming the transmission part and the electrode material forming the reflection part are in contact with each other or other metal films or the like. In order to prevent the electrodes from being electrically connected to each other, a structure in which an interlayer film is interposed therebetween solves the problem of corrosion due to electrolytic corrosion of the electrode material and blackening due to reduction. This is because the electric resistance between the electrode material constituting the transmission part and the electrode material constituting the reflection part becomes high by adopting the structure via the interlayer film, and even when immersed in the electrolytic solution, the electrolytic corrosion and It is possible to make reduction less likely to occur.

In addition, the method for manufacturing a liquid crystal display device of the present invention for achieving the above-described object reflects external light on one of a pair of substrates arranged to face each other with a liquid crystal layer interposed therebetween. In a method for manufacturing a liquid crystal display device, in which a pixel electrode that forms a reflection portion and a transmission portion that transmits light from a back light source in one pixel is formed, one side including at least a region that forms the transmission portion is provided. A step of patterning and forming a transparent electrode material on a substrate; a step of patterning and forming an interlayer film on the transparent electrode including at least a region constituting the reflecting portion; and a reflecting portion on the interlayer film. And forming a reflective electrode material by patterning in the region constituting the above.

That is, according to the method of manufacturing a liquid crystal display device of the present invention, even if a misalignment of a photomask or the like occurs during the patterning of the interlayer film or the electrode material in the boundary region between the transmission portion and the reflection portion, the interlayer is not affected By forming a reflective electrode material on the film, the electrode material forming the transmitting part and the electrode material forming the reflecting part are interposed with the interlayer film, and the resist such as amine-based peeling liquid → water washing is removed. Therefore, even when immersed in an electrolytic solution, it is possible to make it difficult for problems caused by electrolytic corrosion and reduction to occur.

As described above, according to the liquid crystal display device and the method of manufacturing the same of the present invention, in the boundary region between the transmission section and the reflection section, the electrode material forming the transmission section and the electrode material forming the reflection section are mutually separated. A structure with an interlayer film between them so that they do not come into contact with each other or electrically connected via another metal film, etc. Has solved the problem. This is because the electric resistance between the electrode material constituting the transmission part and the electrode material constituting the reflection part becomes high by adopting the structure via the interlayer film, and even when immersed in the electrolytic solution, the electrolytic corrosion and It is possible to make reduction less likely to occur.

Hereinafter, Embodiment 1 of the present invention will be described with reference to the drawings.

FIG. 1 is a cross-sectional view showing a configuration of a pixel portion of the liquid crystal display device according to the first embodiment. FIGS. 2 (a) to 2 (d) and 3 (e) to 3 (h) show FIG. 9 is a cross-sectional view illustrating a process of a transmission part and a reflection part in a pixel portion of the liquid crystal display device according to the first embodiment.

In the transmissive portion and the reflective portion constituting the pixel portion of the liquid crystal display device according to the first embodiment, first, as shown in FIG. 2A, Ta ₂ O ₅ , Si 0 An insulating film such as ₂ is formed (not shown), and thereafter, a metal thin film made of Al, Mo, Ta, or the like is formed on the insulating substrate 1 by a sputtering method, and is patterned to form a gate electrode 8.

Next, a gate insulating film 10 is laminated on the insulating substrate 1 so as to cover the gate electrode 8 described above. In the first embodiment, the gate insulating film 10 is formed by stacking 3000 nm SiNx films by the P-CVD method. In order to enhance the insulating property, the gate electrode 8 is anodized, the anodic oxide film is used as a first gate insulating film 9, and an insulating film 10 such as SiN is formed by a CVD method to form a second insulating film. The film 10 may be used.

Next, a channel layer 11 (amorphous Si) and an electrode contact layer 12 (amorphous Si or microcrystalline Si doped with an impurity such as phosphorus) are successively stacked on the gate insulating film 10 by the CVD method at 1500 ° and 500 °, respectively. Then, both Si films of the electrode contact layer 12 and the channel layer 11 are formed by patterning by a dry etching method using an HCl + SF ₆ mixed gas.

Thereafter, as shown in FIG. 2 (b), a transparent conductive film (ITO) 2, 13 is laminated as an electrode material constituting the transmission portion by sputtering at 1500 ° by a sputtering method, and subsequently, a metal thin film such as an Al, Mo, Ta film or the like is formed. 14 and 15 are laminated. Then, by patterning these, source electrodes 13 and 14 and drain electrodes 2 and 15 are formed.

Next, as shown in FIG. 2C, an insulating film of SiN or the like is deposited at a thickness of 3000 by the CVD method, and then patterned to form an interlayer film 7.

Next, as shown in FIG. 2 (d), a photosensitive resin film 3 is applied on the interlayer film 7, the photosensitive resin 3 is exposed and developed, and then heat-treated. A contact portion and a transmission portion are formed.

Next, as shown in FIG. 3 (e), Al / Mo films 4 and 5 are formed on the substrate 1 including the interlayer film 7 and the photosensitive resin 3 as an electrode material constituting a reflection portion by sputtering at 1000/500 °. Is formed with a film thickness of

(3) Then, as shown in FIG. 3 (f), a photoresist 16 is formed in a predetermined shape on the electrode material constituting the reflection portion by using a photolithography process. At this time, Mo5 exists between ITO2, which is an electrode material forming the transmitting portion, and Al4, which is an electrode material forming the reflecting portion. Even if the solution is impregnated, Mo5 functions as a barrier metal, so that no electrolytic corrosion reaction occurs.

(4) At this time, when patterning the electrode material constituting the reflective portion in the next step, it is necessary to prevent the ITO2 and Al4 / Mo5 in the boundary region between the transmissive portion and the reflective portion from coming into direct contact. That is, as shown in the cross-sectional view of FIG. 1, in consideration of misalignment between the interlayer film 7 and the reflective electrode 4, in the boundary region between the electrode material forming the transmitting portion and the electrode material forming the reflecting portion, The photoresist 16 is exposed and developed so that the end of the photoresist 16 is closer to the reflection section than the end of the interlayer film 7.

Next, as shown in FIG. 3 (g), using an etchant composed of nitric acid + acetic acid + phosphoric acid + water, Al / Mo, which is an electrode material constituting the reflecting portion, is simultaneously etched to form a reflecting electrode. I do.

Finally, as shown in FIG. 3H, the photoresist 16 formed by photolithography is removed by using a batch type peeling device, whereby the pixel portion of the liquid crystal display device according to the first embodiment is completed. I do.

Here, a batch type peeling apparatus used for removing the photoresist 16 formed by the photolithography will be described with reference to FIG. FIGS. 4A to 4C are schematic views showing a batch type photoresist 16 stripping step in the first embodiment.

As shown in FIGS. 4A to 4C, the substrate 20 having undergone the above-described steps is immersed in a stripping solution 21 containing 60 wt% of MEA (monoethanolamine) as an amine. In order to remove the stripping liquid 21, the substrate is immersed in water 22 and washed with water. At this time, in the process in which the substrate 20 is transferred from the stripping tank to the washing tank as shown in FIG. 4B, the stripping liquid 21 adheres to the surface of the substrate 20, and the substrate 20 is washed with water. By immersing in the bath, the MEA 21 and the water 22 are mixed on the surface of the substrate 20 to increase the alkalinity.

Therefore, in the liquid crystal display device having the conventional configuration, when the photoresist 16 is removed, ITO2 which is an electrode material forming the transmission portion and an electrode forming the reflection portion are formed in a boundary region between the transmission portion and the reflection portion. Since the material Al4 / Mo5 is adjacently formed, electrolytic corrosion occurs.

However, in the first embodiment, as described above, in the boundary region between the transmitting portion and the reflecting portion, as shown in the cross-sectional view of FIG. 1, ITO2 as an electrode material forming the transmitting portion and the reflecting portion are formed. The interlayer film 7 and the reflective electrode materials 4 and 7 are patterned so that the electrode material Al4 / Mo5 does not directly contact, so that the transparent electrode material ITO and the reflective electrode material Al are interposed. The photoresist 16 can be removed without causing electrolytic corrosion.

If there is no problem even if the electric charge applied to the liquid crystal layer in the transmission part is slightly reduced, the interlayer film 7 may be formed on the entire surface of ITO which is an electrode material constituting the transmission part. In the case of such a configuration, there is an advantage that the retardation between the transmission part and the reflection part can be set to an optimum value by controlling the thickness of the interlayer film 7.

(4) An alignment film is applied to each of the TFT substrate having the pixel portion manufactured as described above and the transparent counter substrate (not shown) on which the transparent electrode is formed, and baked. Then, a rubbing treatment is applied to the alignment film, and spacers are scattered. Then, the two substrates are bonded together with a sealing resin, and liquid crystal is injected by a vacuum injection method to produce a liquid crystal display element. In the first embodiment, in order to operate in the liquid crystal mode of horizontal alignment, the rubbing directions are set to be parallel, and nematic liquid crystal having a positive dielectric anisotropy is injected. Finally, one polarizing plate and one retardation plate are provided on both sides of the liquid crystal display element, respectively, and a backlight is provided on the back surface, thereby completing the transflective liquid crystal display device according to the first embodiment.

In the first embodiment described above, the method of removing the photoresist 16 formed by photolithography using a batch type peeling device has been described. In the second embodiment, the photoresist 16 formed by photolithography is removed. A method of removing the sapphire using a single-wafer type peeling device will be described.

FIGS. 5A to 5D are schematic views showing a step of removing the photoresist 16 according to the second embodiment. The manufacturing process of the liquid crystal display device according to the second embodiment is performed according to the same flow as that of the above-described first embodiment, except for the step of removing the photoresist 16.

As shown in FIGS. 5 (a) to 5 (d), the substrate 20 having undergone the steps of FIGS. 2 and 3 in Embodiment 1 is immersed in a stripping solution 21 containing 60 wt% of MEA (monoethanolamine) as an amine. Thereafter, the substrate 20 is immersed in water 22 and washed with water to remove the stripping liquid 21 on the surface of the substrate 20. At this time, in the process of transporting the substrate 20 from the stripping tank to the washing tank as shown in FIG. 5C, the stripping liquid 21 adheres to the surface of the substrate 20, and the substrate 20 is washed with water. By soaking in the bath, the MEA 21 and the water 22 are mixed on the surface of the substrate 20 and the alkalinity is increased.

Therefore, in the liquid crystal display device having the conventional configuration, when the photoresist 16 is removed, ITO2 which is an electrode material forming the transmission portion and an electrode forming the reflection portion are formed in a boundary region between the transmission portion and the reflection portion. Since the material Al4 / Mo5 is adjacently formed, electrolytic corrosion occurs. However, also in the second embodiment, as described above, in the boundary region between the transmission portion and the reflection portion, as shown in FIG. As shown in the cross-sectional view, the interlayer film 7 and the reflective electrode materials 4 and 7 are made so that ITO2 as the electrode material forming the transmitting portion does not directly contact Al4 / Mo5 as the electrode material forming the reflecting portion. Because of the patterning, the photoresist 16 can be removed without causing electrolytic corrosion between ITO as the transparent electrode material and Al as the reflective electrode material.

Hereinafter, a third embodiment of the present invention will be described with reference to the drawings.

FIG. 6 is a cross-sectional view showing a configuration of a pixel portion of the liquid crystal display device according to the third embodiment. FIGS. 7A to 7D and FIGS. FIG. 13 is a cross-sectional view illustrating a process of a transmission part and a reflection part in a pixel portion of a liquid crystal display device according to a third embodiment.

In the transmissive portion and the reflective portion constituting the pixel portion of the liquid crystal display device according to the third embodiment, first, as shown in FIG. 7A, Ta ₂ O ₅ , Si 0 An insulating film such as ₂ is formed (not shown), and thereafter, a metal thin film made of Al, Mo, Ta, or the like is formed on the insulating substrate 1 by a sputtering method, and is patterned to form a gate electrode 8.

Next, a gate insulating film 10 is laminated on the insulating substrate 1 so as to cover the gate electrode 8 described above. In the third embodiment, the gate insulating film 10 is formed by stacking 3000 nm SiNx films by the P-CVD method. In order to enhance the insulating property, the gate electrode 8 is anodized, the anodic oxide film is used as a first gate insulating film 9, and an insulating film 10 such as SiN is formed by a CVD method to form a second insulating film. The film 10 may be used.

Next, a channel layer 11 (amorphous Si) and an electrode contact layer 12 (amorphous Si or microcrystalline Si doped with an impurity such as phosphorus) are successively stacked on the gate insulating film 10 by the CVD method at 1500 ° and 500 °, respectively. Then, both Si films of the electrode contact layer 12 and the channel layer 11 are formed by patterning by a dry etching method using an HCl + SF ₆ mixed gas.

Thereafter, as shown in FIG. 7 (b), transparent conductive films (ITO) 2, 13 are laminated as an electrode material constituting the transmission portion by sputtering at 1500 ° by a sputtering method, and subsequently, a metal thin film such as an Al, Mo, Ta film or the like is formed. 14 and 15 are laminated. Then, by patterning these, source electrodes 13 and 14 and drain electrodes 2 and 15 are formed.

Next, as shown in FIG. 7C, a photosensitive resin film 3 is applied on the ITO 2, and after exposing and developing the photosensitive resin 3, a heat treatment is performed. , Forming a transmission part.

Next, as shown in FIG. 7D, on the substrate 1 containing the photosensitive resin 3, Al / Mo films 4 and 5 as an electrode material constituting a reflection portion are formed to a thickness of 1000/500 ° by a sputtering method. To form a film.

(8) Then, as shown in FIG. 8 (e), a photoresist 16 is formed in a predetermined shape on the electrode material constituting the reflection portion by using a photolithography process. At this time, Mo5 exists between ITO2, which is an electrode material forming the transmitting portion, and Al4, which is an electrode material forming the reflecting portion. Even if the solution is impregnated, Mo5 functions as a barrier metal, so that no electrolytic corrosion reaction occurs.

(4) At this time, when patterning the electrode material constituting the reflective portion in the next step, it is necessary to prevent the ITO2 and Al4 / Mo5 in the boundary region between the transmissive portion and the reflective portion from coming into direct contact. That is, as shown in the cross-sectional view of FIG. 6, in consideration of the misalignment between the photosensitive resin 3 and the reflective electrode 4, the boundary region between the electrode material forming the transmitting portion and the electrode material forming the reflecting portion is considered. The photoresist 16 is exposed and developed so that the end of the photoresist 16 is closer to the reflection part than the end of the photosensitive resin 3.

Next, as shown in FIG. 8F, using an etchant composed of nitric acid + acetic acid + phosphoric acid + water, Al / Mo, which is an electrode material forming the reflection portion, is simultaneously etched to form a reflection electrode. I do.

Finally, as shown in FIG. 8G, the photoresist 16 formed by photolithography is removed by using a batch type peeling device, whereby the pixel portion of the liquid crystal display device according to the third embodiment is completed. I do.

Also in the third embodiment, as described above, in the boundary region between the transmission part and the reflection part, as shown in the cross-sectional view of FIG. 6, ITO2, which is an electrode material forming the transmission part, and the electrode forming the reflection part The photosensitive resin 3 and the reflective electrode materials 4 and 7 are patterned so that the material Al4 / Mo5 does not come into direct contact, so that the transparent electrode material ITO and the reflective electrode material Al The photoresist 16 can be removed without causing electrolytic corrosion.

FIG. 1 is an enlarged sectional view showing a configuration of a pixel portion of the liquid crystal display device according to the first embodiment of the present invention. FIGS. 2A to 2D are enlarged cross-sectional views showing processes of a pixel portion of the liquid crystal display device according to the first embodiment of the present invention. FIGS. 3E to 3H are enlarged cross-sectional views showing a process of a pixel portion of the liquid crystal display device according to the first embodiment of the present invention. FIGS. 4A to 4C are schematic views showing a batch type photoresist stripping step according to the first embodiment of the present invention. FIGS. 5A to 5D are schematic views showing a single-wafer photoresist stripping step according to the second embodiment of the present invention. FIG. 6 is an enlarged sectional view showing a configuration of a pixel portion of the liquid crystal display device according to the third embodiment of the present invention. FIGS. 7A to 7D are enlarged cross-sectional views illustrating a process of a pixel portion of the liquid crystal display device according to the third embodiment of the present invention. 8 (e) to 8 (g) are enlarged cross-sectional views showing a process of a pixel portion of the liquid crystal display device according to the third embodiment of the present invention. FIG. 9 is a sectional view showing a boundary region between a transparent electrode and a reflective electrode in a pixel portion of a conventional liquid crystal display device. FIG. 10 is a cross-sectional view showing a boundary region between a transparent electrode and a reflective electrode in a pixel portion of a conventional liquid crystal display device.

Explanation of reference numerals

1 Glass substrate 2 Transparent electrode material (ITO)
3 Photosensitive resin film 4 Reflective electrode material (Al)
5 Reflective electrode material (Mo)
Reference Signs List 6 transmission part 7 insulating film 8 gate electrode 9 anodized film 10 gate insulating film 11 channel layer 12 electrode contact layer 13 source electrode (ITO)
14. Source electrode (Ta)
15 Drain electrode (Ta)
16 Photoresist 20 Substrate 21 Stripper 22 Water

Claims (2)

A reflective portion for reflecting external light and a transmissive portion for transmitting light from a back light source are formed in one pixel on one of a pair of substrates disposed opposite to each other with a liquid crystal layer interposed therebetween. In a liquid crystal display device in which a pixel electrode is formed,
The reflection part and the transmission part are each made of an electrode material, and these electrode materials are formed so as to partially or entirely overlap with each other via an interlayer film in a boundary region of each other. Display device. A reflective portion for reflecting external light and a transmissive portion for transmitting light from a back light source are formed in one pixel on one of a pair of substrates disposed opposite to each other with a liquid crystal layer interposed therebetween. In a method of manufacturing a liquid crystal display device having a pixel electrode formed thereon,
A step of patterning and forming a transparent electrode material on one side of the substrate including a region constituting at least the transmitting portion;
A step of patterning and forming an interlayer film on the transparent electrode including a region constituting at least the reflection portion;
A step of patterning and forming a reflective electrode material in a region constituting a reflective portion on the interlayer film;
A method for manufacturing a liquid crystal display device, comprising:

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