JP2004125874A - Stamper and its manufacturing method and forming method using the stamper - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a stamper having high reliability and to produce an object to be formed using the stamper at low cost, i.e., with regard to a stamper which is used to manufacture a diffraction grating and its manufacturing method and a forming method using the stamper. <P>SOLUTION: In a diffraction grating stamper, a diffraction grating pattern that has projected and recessed shapes and becomes a pattern of a diffraction grating is formed on a substrate. An SOI substrate having a first bulk layer 11, a second bulk layer 12 and a middle layer 13 is used as the substrate, and a diffraction grating pattern 21 is formed on the first bulk layer 11 of the SOI substrate by using bulk micromachining technology. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a stamper for a diffraction grating, a method for manufacturing the same, and a method for manufacturing a diffraction grating, and particularly relates to a stamper for a diffraction grating used when manufacturing a diffraction grating, a method for manufacturing the same, and a diffraction grating using the stamper for a diffraction grating. The present invention relates to a method for manufacturing a diffraction grating to be manufactured.
[0002]
[Prior art]
In recent years, there has been an increasing demand for various technologies using light, including optical communication. A diffraction grating is one of the optical elements that support this light utilization technology. This diffraction grating is widely used mainly as a light splitter, a reflective element of a specific wavelength, or a variable wavelength reflective element. This diffraction grating is an indispensable component for a component supporting the light utilization technology, and a more accurate and inexpensive diffraction grating is required.
[0003]
Conventionally, a mechanical ruled line method has been known as a method of manufacturing this diffraction grating. This mechanical engraving method is a method of engraving grating grooves one by one on a substrate to be a stamper for a diffraction grating using a diamond tool having a predetermined shape. Then, the substrate on which the grating grooves are formed is used as a prototype, and this is transferred to a resin or the like using a transfer method to manufacture a diffraction grating.
[0004]
However, this mechanical marking method uses ultra-precision positioning equipment and constant environment equipment to perform accurate processing, and requires several days to several tens of days. Would be expensive. Therefore, the cost of a diffraction grating manufactured using this diffraction grating stamper also increases.
[0005]
In order to solve this, a method of forming a lattice groove on a substrate made of a silicon composite by using an etching method has been proposed (for example, Patent Document 1).
[0006]
[Patent Document 1]
JP-A-8-334610.
[0007]
[Problems to be solved by the invention]
In the method of manufacturing a stamper for a diffraction grating disclosed in the above publication, an etch stop layer is formed on a glass substrate, and an amorphous silicon layer is formed thereon by CVD (chemical vapor deposition) or the like. The diffraction grating stamper is manufactured by forming the layers in a predetermined pattern by etching up to the etch stop layer.
[0008]
However, in the method disclosed in the above publication, the mechanical strength of the amorphous silicon layer formed by CVD or the like is lower than that of bulk silicon. Also, when an amorphous silicon layer is formed on the etch stop layer by CVD or the like, the interface bonding strength between the etch stop layer and the amorphous silicon layer becomes weak.
[0009]
Therefore, after introducing a resin to be a diffraction grating onto the diffraction grating stamper and molding the resin, when the resin is to be released from the diffraction grating stamper, the amorphous silicon layer on which the grating grooves are formed is formed. Or the amorphous silicon layer is peeled off from the etch stop layer.
[0010]
Further, in the method of manufacturing a stamper for a diffraction grating disclosed in the above publication, when an attempt is made to form a deep grating groove, it is necessary to form an amorphous silicon layer thickly, but in principle, amorphous silicon can be formed (deposited). There is a problem in that the thickness is limited and it is difficult to form a lattice groove having a high aspect ratio.
[0011]
The present invention has been made in view of the above points, and has a high reliability stamper for a diffraction grating, a stamper for a diffraction grating capable of manufacturing the diffraction grating at low cost, a method for manufacturing the stamper, and a method for manufacturing the diffraction grating. The purpose is to provide.
[0012]
[Means for Solving the Problems]
In order to solve the above problems, the present invention is characterized by taking the following means.
[0013]
The invention according to claim 1 is
In a stamper in which an uneven transfer pattern is formed on a substrate,
The pattern is formed on a first layer made of a single-crystal bulk constituting the substrate.
[0014]
According to the above invention, since the pattern is formed on the single crystal bulk layer, the strength of this pattern is stronger than the strength of the pattern formed on the amorphous layer. Therefore, it is possible to prevent the pattern from being deformed or distorted at the time of manufacturing a molding object using this stamper (at the time of transferring the lattice groove), and it is possible to improve the reliability of the stamper.
[0015]
The invention according to claim 2 is
The stamper according to claim 1,
A second layer constituting the substrate is exposed in a concave portion of the pattern.
[0016]
According to the above invention, since the second layer having high strength and little deterioration with time is exposed in the concave portions of the pattern, the shape of the pattern (specifically, the groove depth) is increased even if the number of moldings of the molding object by the stamper is increased. ) Does not change, so that a high-precision molded object can be manufactured without deterioration over time.
[0017]
The invention according to claim 3 is:
In the stamper according to claim 2,
The wall of the pattern is a wall perpendicular to the exposed surface of the second layer.
[0018]
According to the above invention, since the wall portion of the pattern is a wall surface perpendicular to the exposed surface of the second layer, it is possible to manufacture a high-precision molded object.
[0019]
The invention according to claim 4 is
In the stamper according to any one of claims 2 and 3,
A third layer for supporting the second layer is formed.
[0020]
According to the above invention, since the second layer is supported by the third layer, the mechanical strength of the stamper can be increased.
[0021]
The invention according to claim 5 is
The stamper according to any one of claims 2 to 4,
The first layer is formed of bulk single crystal silicon, the second layer is formed of silicon oxide, and the substrate has a structure in which the second layer is in close contact with the first layer. It is characterized by the following.
[0022]
According to the above invention, the reliability of the stamper can be improved by forming the first layer from the bulk of single crystal silicon. That is, the bulk of single-crystal silicon has higher mechanical strength than polysilicon (amorphous silicon) formed using thin-film technology. For this reason, by forming the pattern in the bulk of single crystal silicon, it is possible to prevent the pattern from being deformed or distorted, thereby improving the reliability of the stamper.
[0023]
In addition, the second layer is formed of silicon oxide, and the substrate has a structure in which the second layer is in close contact with the first layer, so that the first layer is processed by the second layer. It can be used as a layer for stopping the processing of the first layer.
[0024]
The invention according to claim 6 is:
The stamper according to any one of claims 1 to 5,
The pattern constitutes a mold for manufacturing a diffraction grating.
[0025]
According to the above invention, a highly accurate diffraction grating can be manufactured with high productivity.
[0026]
The invention according to claim 7 is
In a method of manufacturing a stamper for forming a concave-convex transfer pattern on a substrate using a substrate including a first layer made of a single-crystal bulk and a second layer in close contact with the first layer,
The pattern is formed by processing the first layer so as to expose the second layer.
[0027]
According to the above invention, the height of the pattern is determined by the height of the first layer, so that the height of the pattern can be determined with high accuracy.
[0028]
The invention according to claim 8 is
The method for manufacturing a stamper according to claim 7,
When the pattern is formed, the first layer is processed using a bulk micromachining technique using the second layer as an etch stop material.
[0029]
According to the above invention, since the first layer is subjected to bulk micromachining using the second layer as an etch stop material, it is possible to prevent the first layer from being processed more than the second layer, Thereby, a pattern can be formed with high accuracy.
[0030]
The invention according to claim 9 is
The method for manufacturing a stamper according to claim 8,
A reactive ion etching is used as the bulk micromachining technique.
[0031]
According to the above invention, by using reactive ion etching as bulk micromachining, a groove having a high aspect ratio and having a side wall substantially perpendicular to the processing surface of the first layer can be formed on the first layer. Therefore, a pattern can be formed with high accuracy.
[0032]
The invention according to claim 10 is
A molding method using the stamper according to any one of claims 1 to 5,
Attaching the stamper to a mold, and injecting a resin to be molded into a cavity formed between the stamper and the mold,
Pressurizing the resin injected between the stamper and the mold,
Releasing the resin on which the pattern has been transferred from the stamper and the mold.
[0033]
According to the above invention, since the molded object is manufactured using the stamper having high strength and high reliability, the reliability of the manufactured molded object can be improved. Further, productivity can be improved by injecting a resin into a cavity formed between a stamper and a mold and forming a diffraction grating by press-molding the injected resin. In addition, it is possible to mass-produce a molded object.
[0034]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, embodiments of the present invention will be described with reference to the drawings.
[0035]
1 and 2 are views for explaining a method of manufacturing a stamper according to one embodiment of the present invention, and FIG. 3 shows a method of manufacturing a molding object using the manufactured stamper. . In this embodiment, a stamper for a diffraction grating will be described as an example of the stamper.
[0036]
First, a method of manufacturing a diffraction grating stamper will be described with reference to FIGS. FIG. 1A shows an SOI (Silicon On Insulator) substrate 10 serving as a base material for manufacturing a diffraction grating stamper 10. The SOI substrate 10 includes a first bulk layer 11 (corresponding to a first layer described in claims) and an insulating intermediate layer 13 (corresponding to a second layer described in claims. ), And a second bulk layer 12 (corresponding to a third layer described in claims) is laminated. The first bulk layer 11 and the second bulk layer 12 are formed of single crystal silicon (Si) bulk, and the intermediate layer 13 is formed of silicon dioxide (SiO ₂ ) which is an insulating material.
[0037]
The thickness of the first bulk layer 11 is set to a thickness corresponding to the groove depth of the diffraction grating pattern 21 described later. The second bulk layer 12 has a function of supporting the first bulk layer 11, and has a thickness of, for example, 360 μm.
[0038]
This SOI substrate 10 is formed using a known SOI technique. Specifically, the SOI substrate 10 can be formed by using a SIMOX (Silicon IMplanted OXide) method or a bonding method. In the SIMOX method, oxygen (O ₂ ) is ion-implanted into a silicon substrate (Si) and then heat-treated to bond with silicon, thereby forming a silicon oxide film (SiO ₂ ) at an internal position from the substrate surface. This is a method for manufacturing the SOI substrate 10.
Further, in the bonding method, a first silicon substrate having an oxide film formed on a surface thereof and a second silicon substrate which is separate from the first silicon substrate are bonded with high heat and high pressure, and then the second silicon substrate is bonded to a predetermined position. This is a method of manufacturing the SOI substrate 10 by grinding to a thickness. Note that a protective layer 14 made of silicon dioxide (SiO ₂ ) is formed on the lower surface of the SOI substrate 10 (the lower surface of the second bulk layer 12).
[0039]
First, a photoresist 15 is applied to the SOI substrate 10 having the above configuration, as shown in FIG. The photoresist 15 is applied on the first bulk layer 11 using, for example, a spinner. This photoresist 15 may be either a positive type or a negative type.
[0040]
Subsequently, the photoresist 15 is exposed and developed to form a pattern corresponding to the diffraction grating pattern 21. Specifically, the photoresist 15 is left in a portion to be the diffraction grating pattern 21, and the photoresist 15 in a portion where the deeply etched portion 17 is formed is removed (for the deeply etched portion 17 and the diffraction grating pattern 21, see FIG. 2 (F)).
[0041]
FIG. 1C shows a state where an unnecessary portion of the photoresist 15 has been removed. As shown in the figure, the portion where the photoresist 15 has been removed is in a state where the first bulk layer 11 is exposed.
[0042]
When the patterning of the photoresist 15 is completed as described above, subsequently, bulk micromachining is performed on the SOI substrate 10, and a formation process of the diffraction grating pattern 21 is performed. In this embodiment, reactive ion etching (RIE) is used as bulk micromachining. The SOI substrate 10 is mounted on an etching apparatus that performs reactive ion etching, and reactive ion etching is performed on the first bulk layer 11 using the photoresist 15 as a mask. Here, the above-mentioned bulk micromachining technology refers to a processing technology for forming a fine structure on a single crystal substrate itself ("Semiconductor Dictionary": Nikkan Kogyo Shimbun Co., Ltd., published on March 20, 1999, See page 871, right column).
[0043]
In this embodiment, reactive ion etching using SF ₆ gas is used. One of the major features of this reactive ion etching is that it has a high etch rate selectivity between silicon (Si) and silicon dioxide (SiO ₂ ).
[0044]
The etch rate selection ratio varies depending on the conditions, but is Si: SiO2 = (100-300): 1. Further, in the reactive ion etching for performing gas exchange, the deeply etched portion 17 (groove) having a side wall substantially perpendicular to the processing surface can be processed by alternately repeating the process of protecting the side wall and the process of etching. Therefore, the deep-bored portion 17 having a high aspect ratio can be formed.
[0045]
FIG. 2 (D) shows a process of forming a deeply processed portion 17 in the first bulk layer 11 by reactive ion etching. As described above, in the reactive ion etching, a groove having a side wall substantially perpendicular to the processing surface can be formed, but when digging a certain area at a certain depth or more, the flatness of the bottom surface is within several μm. It's hard to keep. For this reason, as shown in FIG. 2D, during the processing, the uneven thickness 16 is formed on the bottom surface of the deep-bored portion 17.
[0046]
Now, assuming a configuration in which the intermediate layer 13 does not exist (a configuration in which the first bulk layer 11 and the second bulk layer 12 are integrated), time control is required to control the depth of the deep excavated portion 17. The only way to do this is to reduce its accuracy. In addition, the thickness unevenness 16 remains at the bottom of the deep-bored portion 17.
[0047]
The depth control of the deep-bored portion 17 is equivalent to the height control of the diffraction grating pattern 21. Therefore, in a configuration in which the intermediate layer 13 does not exist, the height of the diffraction grating pattern 21 varies. As described above, when the height of the diffraction grating pattern 21 varies, the accuracy of the diffraction grating 40 (see FIG. 3) manufactured using the diffraction grating stamper 20 having the diffraction grating pattern 21 as a prototype also decreases. I will.
[0048]
On the other hand, in the present embodiment, the intermediate layer 13 made of silicon dioxide (SiO ₂ ) whose reactive ion etching rate is extremely slow with respect to silicon (Si) is formed by the first bulk layer 11 and the second bulk layer. It is provided between the layer 12. Therefore, the reactive ion etching on the first bulk layer 11 is performed until the intermediate layer 13 is exposed, and after the intermediate layer 13 is exposed, the etching is prevented from reaching the second bulk layer 12. .
[0049]
That is, when performing an etching process on the first bulk layer 11, the intermediate layer 13 functions as an etch stop material for controlling the amount of etching on the first bulk layer 11. Therefore, by providing the intermediate layer 13, as shown in FIG. 2E, the thickness unevenness 16 generated at the bottom of the deeply etched portion 17 can be completely removed by reactive ion etching. In addition, since the reactive ion etching does not proceed to the intermediate layer 13 functioning as an etch stop material or more, the second bulk layer 12 is not etched.
[0050]
Thus, the intermediate layer 13 is exposed at the bottom (the concave portion of the pattern) of the deep-bored portion 17. Further, as described above, since the deeply etched portion 17 of the first bulk layer 11 is formed by reactive ion etching, the side wall (wall of the pattern) becomes a wall surface perpendicular to the exposed surface of the intermediate layer 13. .
[0051]
When the diffraction grating pattern 21 is formed by processing the deep processing portion 17 as described above, the ashing process is performed, and the photoresist 15 is removed. By performing the series of processes described above, the diffraction grating stamper 20 shown in FIG. 2F is manufactured.
[0052]
The diffraction grating stamper 20 has a configuration in which diffraction grating patterns 21 and deeply processed portions 17 are alternately formed on the first bulk layer 11, and thus has an uneven shape. The diffraction grating stamper 20 becomes a prototype for forming a grating groove in the diffraction grating 40 when the diffraction grating 40 is manufactured.
[0053]
As described above, in the method of manufacturing the diffraction grating stamper 10 according to the present embodiment, the first bulk layer 11 that becomes the diffraction grating pattern 21 is formed of bulk single crystal silicon. The bulk of single crystal silicon has higher mechanical strength than polysilicon or amorphous silicon formed (deposited) using a thin film technique (for example, a CVD method or the like). For this reason, by forming the diffraction grating pattern 21 on the first bulk layer 11 which is a bulk of single crystal silicon, it is possible to prevent the diffraction grating pattern 21 from being deformed or distorted. Reliability can be improved.
[0054]
Further, since the diffraction grating pattern 21 is formed on the first bulk layer 11 by using RIE, which is a bulk micromachining technology, compared to a configuration in which thin film technology is used to repeatedly stack and etch thin films to form a diffraction grating pattern. In addition, the intensity of the diffraction grating pattern 21 can be improved. Therefore, it is possible to prevent the diffraction grating pattern 21 from being deformed or distorted at the time of manufacturing the diffraction grating 40 (when transferring the grating grooves), and to improve the reliability of the diffraction grating stamper 20.
[0055]
The diffraction grating stamper 20 manufactured as described above has a configuration in which the intermediate layer 13 is exposed at the concave portion of the diffraction grating pattern 21, that is, at the bottom of the deep-bored portion 17. The intermediate layer 13 is made of SiO ₂ as described above, and is a stable material having high strength and little deterioration over time.
[0056]
Since the intermediate layer 13 that is mechanically strong and stable is formed in the concave portion of the diffraction grating pattern 21, even when a large number of diffraction gratings 40 are manufactured using the diffraction grating stampers 20, the intermediate layer 13 is formed. Does not deteriorate with time or a thickness change occurs, and the height of the diffraction grating pattern 21 is kept constant. Therefore, according to the diffraction grating stamper 20 of the present embodiment, it is possible to manufacture the diffraction grating 40 with high accuracy without deterioration over time.
[0057]
In the above-described method of manufacturing the diffraction grating stamper 20, both the first bulk layer 11 and the second bulk layer 12 are made of single crystal silicon bulk. However, the first bulk layer 11 and the second bulk layer 12 do not necessarily have to be made of single crystal silicon bulk, and the diffraction grating pattern 21 can be processed with high accuracy and a predetermined mechanical strength can be obtained. If so, it is also possible to use resin, metal, and other materials.
[0058]
Further, the first bulk layer 11 and the second bulk layer 12 do not necessarily need to be made of the same material, but may be made of different materials. In this case, when the material of the second bulk layer 12 is a material that functions as an etch stop material when the first bulk layer 11 is etched, the intermediate layer 13 can be removed.
[0059]
FIG. 3 shows a method of manufacturing the diffraction grating 40 by using the diffraction grating stamper 20 manufactured as described above.
[0060]
In order to form the diffraction grating 40, first, a mold 30 having a configuration in which the diffraction grating stamper 20 can be mounted is prepared. In this embodiment, the structure is such that the diffraction grating stamper 20 can be mounted below the mold 30. Further, the mold 30 is configured to be movable in the vertical direction in the figure with respect to the diffraction grating stamper 20.
[0061]
When the diffraction grating stamper 20 is mounted on the mold 30, as shown in FIG. 3A, the diffraction grating stamper 20 is placed in a space (cavity) formed between the diffraction grating stamper 20 and the mold 30. The resin 32 is injected. The injection processing of the diffraction grating resin 32 is performed using, for example, an injection molding machine.
[0062]
After completion of the injection processing of the diffraction grating resin 32, the mold 30 is pressed toward the diffraction grating stamper 20, as shown in FIG. As described above, the mold 30 is configured to be vertically movable with respect to the diffraction grating stamper 20 in the figure. Therefore, by pressing the mold 30 toward the diffraction grating stamper 20, the diffraction grating resin 32 is pressed. That is, in the present embodiment, the injection press method is used to form the diffraction grating 40.
[0063]
When the above-described pressurizing process is completed, subsequently, as shown in FIG. 3 (C), the mold 30 is moved upward with respect to the diffraction grating stamper 20, and accordingly, the diffraction grating 40 is moved to the diffraction grating stamper 20 and Release from the mold 30. Thus, the diffraction grating pattern 21 formed on the diffraction grating stamper 20 is transferred, and the diffraction grating 40 having the pattern 42 (grating groove) corresponding to the diffraction grating pattern 21 is manufactured.
[0064]
According to the method for manufacturing the diffraction grating 40 according to the present embodiment as described above, the diffraction grating 40 is manufactured using the diffraction stamper 20 having high strength and high reliability. Can also be increased. In addition, productivity can be improved by forming the diffraction grating 40 by pressure molding (press molding) of the diffraction grating resin 32 by using an injection press method, so that the diffraction grating 40 can be mass-produced. Is also possible.
[0065]
In the above-described embodiment, the reflection amplitude diffraction grating is described as an example of the diffraction grating 40. However, the application of the present invention is not limited to the reflection type amplitude diffraction grating, but can be applied to diffraction gratings of other configurations such as a transmission phase type diffraction grating and a reflection type raised grating. It is.
[0066]
In addition to the diffraction grating, the present invention is also applied to a stamper used when manufacturing an optical disk such as a CD (compact disk) and a DVD (digital video disk), and further to a comb-shaped electrostatic actuator. It is possible to do.
[0067]
【The invention's effect】
As described above, according to the present invention, the following various effects can be realized.
[0068]
According to the first aspect of the present invention, it is possible to prevent the pattern from being deformed or distorted during the production of the molding object using the present stamper (at the time of transferring the lattice groove), and to improve the reliability of the stamper. be able to.
[0069]
According to the second aspect of the present invention, the shape of the pattern (specifically, the groove depth) does not change even if the number of times of molding the object to be molded by the stamper is increased, and therefore, high precision is achieved. It is possible to manufacture a molded object without deterioration over time.
[0070]
According to the third aspect of the invention, it is possible to manufacture a high-precision molded object.
[0071]
According to the fourth aspect of the present invention, since the second layer is supported by the third layer, the mechanical strength of the stamper can be increased.
[0072]
According to the fifth aspect of the present invention, by forming the pattern in the bulk of single-crystal silicon, it is possible to prevent the pattern from being deformed or distorted, thereby improving the reliability of the stamper.
[0073]
According to the invention of claim 6, a highly accurate diffraction grating can be manufactured with high productivity.
[0074]
According to the invention of claim 7, since the height of the unevenness of the pattern is determined by the height of the first layer, the height of the pattern can be determined with high accuracy.
[0075]
Further, according to the invention of claim 8, since the second layer is used as an etch stop material and the first layer is subjected to bulk micromachining, the first layer is processed more than the second layer. Thus, the pattern can be accurately formed.
[0076]
According to the ninth aspect of the present invention, a groove can be formed on the first layer with a high aspect ratio while having a side wall substantially perpendicular to the processed surface, so that a pattern can be formed with high accuracy. be able to.
[0077]
According to the tenth aspect of the present invention, the reliability of the molded object to be manufactured can be improved, and the molded object can be mass-produced.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining a method of manufacturing a stamper for a diffraction grating according to one embodiment of the present invention (part 1).
FIG. 2 is a view for explaining a method of manufacturing a stamper for a diffraction grating according to one embodiment of the present invention (part 2).
FIG. 3 is a diagram for explaining a method of manufacturing a diffraction grating using a diffraction grating stamper according to one embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 SOI substrate 11 1st bulk layer 12 2nd bulk layer 13 Intermediate layer 14 Protective layer 15 Photoresist 16 Uneven thickness 17 Deep drilling part 20 Diffraction grating stamper 21 Diffraction grating pattern 30 Mold 32 Diffraction grating resin 40 Diffraction Lattice 42 pattern

Claims (10)

In a stamper in which an uneven transfer pattern is formed on a substrate,
A stamper wherein the pattern is formed on a first layer made of a bulk single crystal constituting the substrate. The stamper according to claim 1,
A stamper, wherein a second layer constituting the substrate is exposed in a concave portion of the pattern. In the stamper according to claim 2,
A stamper, wherein a wall of the pattern is a wall perpendicular to an exposed surface of the second layer. In the stamper according to any one of claims 2 and 3,
A stamper, wherein a third layer for supporting the second layer is formed. The stamper according to any one of claims 2 to 4,
The first layer is formed of bulk single crystal silicon, the second layer is formed of silicon oxide, and the substrate has a structure in which the second layer is in close contact with the first layer. A stamper characterized in that: The stamper according to any one of claims 1 to 5,
The stamper, wherein the pattern constitutes a mold for manufacturing a diffraction grating. In a method of manufacturing a stamper for forming a concave-convex transfer pattern on a substrate using a substrate including a first layer made of a single-crystal bulk and a second layer in close contact with the first layer,
A method for manufacturing a stamper, wherein the pattern is formed by processing the first layer so as to expose the second layer. The method for manufacturing a stamper according to claim 7,
A method of manufacturing a stamper, wherein, when forming the pattern, the first layer is processed using a bulk micromachining technique using the second layer as an etch stop material. The method for manufacturing a stamper according to claim 8,
A method for manufacturing a stamper, wherein reactive ion etching is used as the bulk micromachining technique. A molding method using the stamper according to any one of claims 1 to 5,
Mounting the stamper on a mold, and injecting a resin to be molded into a cavity formed between the stamper and the mold,
Pressurizing the resin injected between the stamper and the mold,
Releasing the resin to which the pattern has been transferred from the stamper and the mold.

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