JP2003303685A - Organic luminous element - Google Patents
Organic luminous elementInfo
- Publication number
- JP2003303685A JP2003303685A JP2002106905A JP2002106905A JP2003303685A JP 2003303685 A JP2003303685 A JP 2003303685A JP 2002106905 A JP2002106905 A JP 2002106905A JP 2002106905 A JP2002106905 A JP 2002106905A JP 2003303685 A JP2003303685 A JP 2003303685A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- organic light
- emitting device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims description 133
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 16
- 239000012044 organic layer Substances 0.000 claims description 4
- 230000005525 hole transport Effects 0.000 description 18
- 238000002347 injection Methods 0.000 description 18
- 239000007924 injection Substances 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- -1 aluminum chelate complex Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、陽極と陰極間に少
なくとも一層の有機化合物層を備える有機発光素子に関
する。TECHNICAL FIELD The present invention relates to an organic light emitting device having at least one organic compound layer between an anode and a cathode.
【０００２】[0002]
【従来の技術】有機発光素子とは、陰極と陽極との間に
流れる電流によって、両電極間に在る有機化合物が発光
する、いわゆる有機エレクトロルミネッセンス素子のこ
とである。2. Description of the Related Art An organic light emitting device is a so-called organic electroluminescence device in which an organic compound existing between both electrodes emits light by a current flowing between a cathode and an anode.
【０００３】有機発光素子の一般的な断面構造を、図１
に示す。図中、１は基板、２は電極、３は正孔輸送層、
４は発光層、５は電子注入層、６は透明電極をそれぞれ
表している。A general cross-sectional structure of an organic light emitting device is shown in FIG.
Shown in. In the figure, 1 is a substrate, 2 is an electrode, 3 is a hole transport layer,
Reference numeral 4 denotes a light emitting layer, 5 denotes an electron injection layer, and 6 denotes a transparent electrode.
【０００４】この有機発光素子においては、透明電極６
から、電子注入層５、を通して、発光層４に注入された
電子と、電極２から正孔輸送層３を通して発光層４へ注
入された正孔との再結合によって励起子が生成される。
この励起子が基底状態にもどる際に放射される光を利用
する素子である。そして光は透明電極か６から外へ出
る。In this organic light emitting device, the transparent electrode 6
Then, excitons are generated by recombination of the electrons injected into the light emitting layer 4 through the electron injection layer 5 and the holes injected into the light emitting layer 4 through the hole transport layer 3 from the electrode 2.
This is an element that utilizes the light emitted when the excitons return to the ground state. The light then goes out through the transparent electrode or 6.
【０００５】[0005]
【発明が解決しようとする課題】これら有機発光素子に
おいて、透明電極６には、有機発光素子が存在する外部
環境である空気や窒素に較べ屈折率の大きな材料が用い
られる。そのため、発光層４から生じた発光が透明電極
６の取り出し面、すなわち図１における透明電極と外部
環境である空気との界面において、発光の反射が生じ
る。そのため、このような有機発光素子の発光外部取り
出し効率は低かったし、また、そのような屈折率の大き
な材料による透明電極６を用いた場合、有機発光素子へ
外部環境から照射される外光が透明電極６と外部環境と
の界面において反射するため、例え基板側に設けたもう
一方の電極２に外光反射防止手段を設けていても、透明
電極６表面で外光の反射が生じ、素子の発光と、外光の
反射光が混ざり、有機発光素子のコントラストは低かっ
た。更に透明電極６の上に耐湿用にＳｉＮ膜等のパシベ
ーション膜を形成した場合もＳｉＮ膜の屈折率も空気と
の屈折率差が大きい為、同様の問題があった。In these organic light emitting devices, the transparent electrode 6 is made of a material having a refractive index larger than that of air or nitrogen which is the external environment in which the organic light emitting device exists. Therefore, the light emitted from the light emitting layer 4 is reflected on the extraction surface of the transparent electrode 6, that is, the interface between the transparent electrode in FIG. 1 and the air which is the external environment. Therefore, such an organic light emitting element has a low efficiency of extracting light emitted to the outside, and when the transparent electrode 6 made of such a material having a large refractive index is used, the organic light emitting element is not exposed to external light emitted from the external environment. Since reflection occurs at the interface between the transparent electrode 6 and the external environment, even if external light reflection preventing means is provided on the other electrode 2 provided on the substrate side, external light is reflected at the surface of the transparent electrode 6 and the element And the reflected light of external light were mixed, and the contrast of the organic light emitting device was low. Further, even when a passivation film such as a SiN film is formed on the transparent electrode 6 for moisture resistance, the SiN film has the same problem because the difference in refractive index between air and air is large.
【０００６】[0006]
【課題を解決するための手段】本発明は、発光の外部取
り出し効率が高い有機発光素子を提供する。そしてコン
トラストのよい有機発光素子を提供する。The present invention provides an organic light emitting device having a high efficiency of extracting light emitted to the outside. Then, an organic light emitting element with good contrast is provided.
【０００７】具体的に本発明は、対向する一対の電極
と、前記一対の電極間に備えられている有機化合物層と
から少なくとも構成されている有機発光素子であって、
上記電極のうち、発光取り出し側の透明電極の上に、反
射防止層を有することを特徴とする有機発光素子を提供
する。Specifically, the present invention is an organic light emitting device comprising at least a pair of electrodes facing each other and an organic compound layer provided between the pair of electrodes,
There is provided an organic light-emitting device characterized by having an antireflection layer on a transparent electrode on a light emission extraction side among the above electrodes.
【０００８】また本発明は、対向する一対の電極と、前
記一対の電極の間に有機層が設けられた有機発光素子で
あって、前記一対の電極とは、基板側に設けられた一方
の電極と、他方の電極である透明電極であり、前記透明
電極上には、防湿層が設けられており、前記防湿層上に
反射防止層を有することを特徴とする有機発光素子を提
供する。Further, the present invention is an organic light emitting device having a pair of electrodes facing each other and an organic layer provided between the pair of electrodes, wherein the pair of electrodes is one of the electrodes provided on the substrate side. An organic light emitting device is provided, which is an electrode and a transparent electrode which is the other electrode, wherein a moisture-proof layer is provided on the transparent electrode, and an antireflection layer is provided on the moisture-proof layer.
【０００９】[0009]
【発明の実施の形態】（第一の実施の形態）本発明の第
一の実施の形態に係る有機発光素子は、発光取り出し電
極となる透明電極６の上に反射防止層７を設けたもので
ある。この反射防止層は、単層、多層いずれでもよい。
図２は本発明の第一の実施の形態を示す有機発光素子の
模式的断面図である。図中、１は基板であり、２は電極
を示し、３は正孔輸送層、４は発光層、５は電子注入
層、６は透明電極、７は反射防止層であり、いわゆるト
ップエミッション型有機発光素子である。BEST MODE FOR CARRYING OUT THE INVENTION (First Embodiment) An organic light emitting device according to a first embodiment of the present invention is one in which an antireflection layer 7 is provided on a transparent electrode 6 to be a light emission extraction electrode. Is. This antireflection layer may be either a single layer or a multilayer.
FIG. 2 is a schematic cross-sectional view of the organic light emitting device showing the first embodiment of the present invention. In the figure, 1 is a substrate, 2 is an electrode, 3 is a hole transport layer, 4 is a light emitting layer, 5 is an electron injection layer, 6 is a transparent electrode, and 7 is an antireflection layer. It is an organic light emitting device.
【００１０】この反射防止層により、発光層から生じた
発光が、透明電極６と有機発光素子が存在する外部環境
との界面で反射することが回避されるため、素子の発光
効率が向上する。The antireflection layer prevents light emitted from the light emitting layer from being reflected at the interface between the transparent electrode 6 and the external environment in which the organic light emitting element is present, thus improving the light emitting efficiency of the element.
【００１１】外部環境とは、通常の空気であったり、あ
るいは酸素あるいは水分の少ない空気であったり、ある
いは窒素ガス等の不活性ガスのことである。The external environment means normal air, air having a small amount of oxygen or water, or an inert gas such as nitrogen gas.
【００１２】本実施形態において、反射防止層として
は、透明電極６よりも屈折率が低い材料であればよい。
そして単層あるいは多層のいずれでもよい。特に好まし
く用いられる材料の例として、ＳｉＯ２が挙げられる。
なお、有機化合物は公知のものでもよく、例えばＡｌｑ
３、α−ＮＰＤ等を挙げることができる。In this embodiment, the antireflection layer may be made of a material having a refractive index lower than that of the transparent electrode 6.
It may be either a single layer or a multilayer. An example of a material that is particularly preferably used is SiO 2.
The organic compound may be a known one, for example, Alq
3, α-NPD and the like can be mentioned.
【００１３】電極間の有機層は他にも単層でもよいし、
上記以外に機能的に３層やあるいは５層の素子のような
複数層であってもよい。また本実施形態に係る有機発光
素子は、例えばＲＧＢの３色発光素子から構成されるフ
ルカラー表示可能な表示装置にも適用してよい。より具
体的にはディスプレイの表示部に用いてもよい。表示装
置のなかでも特にＴＦＴを有するいわゆるアクティブマ
トリクス駆動の表示パネルの画素部（発光部）として本
実施の形態の有機発光素子を用いてもよい。The organic layer between the electrodes may be a single layer,
In addition to the above, it may functionally have a plurality of layers such as a three-layer or a five-layer element. Further, the organic light emitting device according to the present embodiment may be applied to a display device capable of full color display, which is composed of, for example, three color light emitting devices of RGB. More specifically, it may be used in the display section of the display. Among the display devices, the organic light emitting element of this embodiment may be used as a pixel portion (light emitting portion) of a so-called active matrix driving display panel having a TFT.
【００１４】（第二の実施の形態）本発明の第二の実施
の形態に係る有機発光素子は、発光取り出し電極となる
透明電極６の上に設けられた防湿層を設けた有機発光素
子において、前記防湿層の上に、反射防止層を設けたも
のである。それ以外は第一の実施の形態と同じである。
図３は本発明の第二の実施の形態を示す有機発光素子の
模式的断面図である。図中、１は基板であり、２は電極
を示し、３は正孔輸送層、４は発光層、５は電子注入
層、６は透明電極７は反射防止層、８は防湿層であり、
いわゆるトップエミッション型有機発光素子である。(Second Embodiment) An organic light emitting device according to a second embodiment of the present invention is an organic light emitting device in which a moisture-proof layer is provided on a transparent electrode 6 which serves as a light emission extraction electrode. An antireflection layer is provided on the moisture-proof layer. Other than that, it is the same as the first embodiment.
FIG. 3 is a schematic sectional view of an organic light emitting device showing a second embodiment of the present invention. In the figure, 1 is a substrate, 2 is an electrode, 3 is a hole transport layer, 4 is a light emitting layer, 5 is an electron injection layer, 6 is a transparent electrode 7 is an antireflection layer, 8 is a moisture-proof layer,
This is a so-called top emission type organic light emitting device.
【００１５】この反射防止層により、発光層から生じた
発光が、防湿層８と有機発光素子が存在する外部環境と
の界面で反射することが回避されるため、素子の発光効
率が向上する。The antireflection layer prevents light emitted from the light emitting layer from being reflected at the interface between the moisture-proof layer 8 and the external environment in which the organic light emitting element is present, thus improving the luminous efficiency of the element.
【００１６】（第三の実施の形態）本発明の第三の実施
の形態に係る有機発光素子は、基板側に設けられた電極
として、光の吸収もしくは、干渉により外部から素子に
入射した光がこの電極で反射することを防止した電極を
用いたものである。それ以外は第二の実施形態と同じで
ある。図４は本発明の第二の実施の形態を示す有機発光
素子の模式的断面図である。図中、１は基板であり、９
は外光を遮光し、外光の反射を防止した電極を示し、３
は正孔輸送層、４は発光層、５は電子注入層、６は透明
電極７は反射防止層、８は防湿層であり、いわゆるトッ
プエミッション型有機発光素子である。(Third Embodiment) An organic light emitting device according to a third embodiment of the present invention is used as an electrode provided on the substrate side to absorb light that has entered the device from the outside due to light absorption or interference. , Which uses an electrode which is prevented from being reflected by this electrode. Other than that is the same as the second embodiment. FIG. 4 is a schematic sectional view of an organic light emitting device showing a second embodiment of the present invention. In the figure, 1 is a substrate, and 9
Indicates an electrode that blocks outside light and prevents reflection of outside light.
Is a hole transport layer, 4 is a light emitting layer, 5 is an electron injection layer, 6 is a transparent electrode 7 is an antireflection layer, and 8 is a moistureproof layer, which is a so-called top emission type organic light emitting device.
【００１７】このように本実施形態の有機発光素子は、
基板側電極に外光反射防止した電極を用いた有機発光素
子にも適用できる。また反射防止層により有機発光素子
と外部環境との界面での外光の反射が回避できるため、
他の実施形態と比べてみても素子の発光効率が高いし、
さらには非常にコントラストの高い有機発光素子を提供
できる。As described above, the organic light emitting device of this embodiment is
It can also be applied to an organic light emitting element using an electrode for preventing reflection of external light as the substrate side electrode. In addition, since the antireflection layer can avoid reflection of external light at the interface between the organic light emitting element and the external environment,
The luminous efficiency of the device is high compared to other embodiments,
Further, it is possible to provide an organic light emitting device having a very high contrast.
【００１８】上記の実施形態での素子の発光取り出し効
率の現状は、図２〜図４の構成で見積もると次のように
なる。The present state of the light emission extraction efficiency of the device in the above embodiment is as follows when estimated with the configurations of FIGS.
【００１９】構成材料の屈折率の差が大きい界面で反射
が大きくなり、透過率が低下する。具体的には透明電極
６と発光取り出し空間との界面で、透明電極がＩＴＯで
屈折率ｎ６＝２．０、空間が窒素、あるいは空気で屈折
率ｎｋ＝１とすれば反射率＝（ｎ６−ｎｋ）２／（ｎ６
＋ｎｋ）２で約１１％の反射損失がある。Reflection increases at the interface where the difference in the refractive index of the constituent materials is large, and the transmittance decreases. Specifically, at the interface between the transparent electrode 6 and the emission extraction space, if the transparent electrode is ITO and the refractive index is n6 = 2.0, and the space is nitrogen or air, and the refractive index is nk = 1, then the reflectance = (n6− nk) 2 / (n6
+ Nk) 2 has a reflection loss of about 11%.
【００２０】透明電極６の上に防湿層８を設けた構成の
素子では、例えば防湿層材料をＳｉＮとすれば屈折率ｎ
８は約２．３である。透明電極６と防湿層８の屈折率差
は約０．３と小さく界面反射も同様に見積もると０．５
％のわずかな反射損失であるが、防湿層８と発光取り出
し空間との界面での反射損失は（ｎ８−ｎｋ）２／（ｎ
８＋ｎｋ）２で約１５．５％の反射損失がある。In the element having the moistureproof layer 8 provided on the transparent electrode 6, for example, if the moistureproof layer material is SiN, the refractive index is n.
8 is about 2.3. The difference in refractive index between the transparent electrode 6 and the moisture-proof layer 8 is about 0.3, and the interface reflection is similarly estimated to be 0.5.
%, But the reflection loss at the interface between the moisture-proof layer 8 and the emission extraction space is (n8-nk) 2 / (n
There is about 15.5% reflection loss at 8 + nk) 2 .
【００２１】つまり取り出し効率の向上は反射損失を抑
え、発光層４から、透明電極６、あるいは防湿層８を通
過して上部へ取り出される光の透過率を向上させること
である。That is, the improvement of the extraction efficiency is to suppress the reflection loss and to improve the transmittance of the light extracted from the light emitting layer 4 to the upper part through the transparent electrode 6 or the moistureproof layer 8.
【００２２】反射損失を抑えるには反射防止膜が有効で
ある。従来から用いられる反射防止膜は透明で屈折率の
大きい材料：ＺｎＳ，ＣｅＯ２，ＴｉＯ２などと屈折率
の小さい材料：ＬｉＦ，ＣａＦ２、ＭｇＦ２，ＳｉＯ２
などを用いる、屈折率大の材料と屈折率小の材料（屈折
率の異なる）を、設計波長を（４×材料の屈折率）で割
った厚さに交互に積層して反射防止膜を形成する。この
とき界面の材料屈折率よりも屈折率の小さい材料を屈折
率小の反射防止膜の材料として用いる必要がある。たと
えばＮａＦ、ＬｉＦ（屈折率小）とＴｉＯ２（屈折率
大）の３対反射防止膜（例えば：筐体面／ＬｉＦ／Ｔｉ
Ｏ２／ＬｉＦ／ＴｉＯ２／ＬｉＦ／ＴｉＯ２／）を用い
れば上記の界面反射損失を１／１０以下にすることが可
能である。An antireflection film is effective for suppressing reflection loss. Conventionally used antireflection films are transparent and have a large refractive index: ZnS, CeO2, TiO2, etc. and a small refractive index: LiF, CaF2, MgF2, SiO2.
, Etc., are used to form an antireflection film by alternately stacking a material with a large refractive index and a material with a small refractive index (different in refractive index) into a thickness obtained by dividing the design wavelength by (4 × the refractive index of the material). To do. At this time, it is necessary to use a material having a smaller refractive index than that of the interface material as the material of the antireflection film having a small refractive index. For example, NaF, LiF (small refractive index) and TiO2 (large refractive index) 3-pair antireflection film (for example: housing surface / LiF / Ti)
If O2 / LiF / TiO2 / LiF / TiO2 /) is used, the interface reflection loss can be reduced to 1/10 or less.
【００２３】反射防止膜９が単層の場合には、材料の屈
折率を、反射損失を抑えたい界面層の材料の屈折率より
小さいものを選ぶ。When the antireflection film 9 is a single layer, a material whose refractive index is smaller than that of the material of the interface layer whose reflection loss is desired to be suppressed is selected.
【００２４】素子のコントラストは、次のような式で評
価される。The contrast of the device is evaluated by the following equation.
【００２５】Ｃ＝１＋Ｂ／（γ×Ａ）
ここでＣはコントラストの評価値、Ａは外光の明るさ
（ｆｔ−Ｌ），Ｂは素子の明るさ（ｆｔ−Ｌ），γは素
子全体の反射率（％）である。C = 1 + B / (γ × A) where C is the evaluation value of contrast, A is the brightness of external light (ft-L), B is the brightness of the element (ft-L), and γ is the entire element. Is the reflectance (%).
【００２６】つまりできるだけ暗いところ（Ａ）で、反
射率を下げた素子を（γ）、なるべく明るくして見る
（Ｂ）ことが必要である。That is, in the darkest place (A), it is necessary to view the element whose reflectance is lowered (γ) as brightly as possible (B).
【００２７】実際は野外で使う場合が問題になる。外光
の明るさが素子の明るさの数倍から十数倍になることが
ある。Actually, there is a problem when used outdoors. The brightness of outside light may be several times to ten times the brightness of the element.
【００２８】透過率を低下させる反射損失が同時にコン
トラストを低下させる。上記の反射防止膜を設けない場
合では同様に約１１〜１６％の外光反射があるので、素
子の明るさ程度の外光があっても、コントラスト値は１
０以下になる。しかし上記反射防止膜を設けて外光反射
を１％程度にしておけば１００近い良好なコントラスト
値が得られる。（ただし電極２が高反射率（たとえば２
０％以上）の場合は、電極２面からの外光反射の影響で
十分なコントラスト向上は得られない。そこで図４の様
に外光を遮光し、外光の反射を防止する電極９（反射率
１％程度）を用いた場合は素子全体で１％以下の外光反
射を達成可能である。Reflection loss, which reduces the transmittance, also reduces the contrast. When the above antireflection film is not provided, about 11 to 16% of external light is reflected in the same manner, so that the contrast value is 1 even when the external light is about the brightness of the device.
It becomes 0 or less. However, if the above-mentioned antireflection film is provided and external light reflection is set to about 1%, a good contrast value close to 100 can be obtained. (However, the electrode 2 has a high reflectance (for example, 2
In the case of 0% or more), sufficient contrast improvement cannot be obtained due to the influence of external light reflection from the electrode 2 surface. Therefore, as shown in FIG. 4, when an electrode 9 (reflectance of about 1%) that blocks external light and prevents reflection of external light is used, external light reflection of 1% or less can be achieved in the entire element.
【００２９】[0029]
【実施例】以下に、本発明の有機発光素子の製造方法の
うち好適な実施例を図面に基づいて説明するが、本発明
はこれら実施例に限られない。Preferred embodiments of the method for manufacturing an organic light emitting device of the present invention will be described below with reference to the drawings, but the present invention is not limited to these embodiments.
【００３０】（実施例１）図２、第一の実施例を示す。
図中、１は基板であり、２は電極を示し、３は正孔輸送
層、４は発光層、５は電子注入層、６は透明電極、７は
反射防止層である。(Embodiment 1) FIG. 2 shows a first embodiment.
In the figure, 1 is a substrate, 2 is an electrode, 3 is a hole transport layer, 4 is a light emitting layer, 5 is an electron injection layer, 6 is a transparent electrode, and 7 is an antireflection layer.
【００３１】基板１上にクロムをスパッタ法にて成膜
し、電極２を得た。その後、該基板をアセトン、イソプ
ロピルアルコール（ＩＰＡ）で順次超音波洗浄し、次い
でＩＰＡで煮沸洗浄後乾燥した。さらに、ＵＶ／オゾン
洗浄した。Chromium was deposited on the substrate 1 by the sputtering method to obtain the electrode 2. Then, the substrate was sequentially ultrasonically cleaned with acetone and isopropyl alcohol (IPA), then washed with IPA by boiling and dried. Further, UV / ozone cleaning was performed.
【００３２】次いで、真空蒸着装置［真空機工社製］を
用いて、洗浄後の該基板を上に正孔輸送性を有する下記
化学式１：Next, using a vacuum deposition apparatus [manufactured by Vacuum Kiko Co., Ltd.], the following chemical formula 1:
【００３３】[0033]
【化１】 [Chemical 1]
【００３４】で表されるαＮＰＤを真空蒸着法により成
膜し正孔輸送層３を形成した。蒸着時の真空度は、１．
０×１０−６Ｔｏｒｒ、成膜速度は、成膜速度は０．２
〜０．３ｎｍ／ｓｅｃの条件で成膜した。次に、前記正
孔輸送層３の上に、下記化学式２：The hole transport layer 3 was formed by depositing αNPD represented by the following by a vacuum deposition method. The degree of vacuum during vapor deposition is 1.
0 × 10 −6 Torr, film formation rate is 0.2
The film was formed under the condition of ~ 0.3 nm / sec. Next, on the hole transport layer 3, the following chemical formula 2:
【００３５】[0035]
【化２】 [Chemical 2]
【００３６】で表される、アルミキレート錯体（以下Ａ
ｌｑ３という）を真空着法により成膜し発光層４を、正
孔輸送層３を成膜するときと同じ条件で形成した。次
に、前記発光層４の上に、電子注入層５として、正孔輸
送層３を成膜するときと同じ条件で、アルミリチウムを
真空蒸着法により成膜した。その後、前記電子注入層５
の上に、酸化錫インジウム（ＩＴＯ）をスパッタ法にて
成膜し、透明電極６を得た。最後に、前記透明電極６の
上に、反射防止膜（層）として、ＳｉＯ２をスパッタ法
にて成膜した。An aluminum chelate complex represented by
1q3) was formed by a vacuum deposition method, and the light emitting layer 4 was formed under the same conditions as when forming the hole transport layer 3. Next, on the light emitting layer 4, as the electron injection layer 5, aluminum lithium was deposited by the vacuum deposition method under the same conditions as when depositing the hole transport layer 3. Then, the electron injection layer 5
A transparent electrode 6 was obtained by depositing indium tin oxide (ITO) on the above by sputtering. Finally, a SiO2 film was formed on the transparent electrode 6 as an antireflection film (layer) by a sputtering method.
【００３７】このようにして、基板１上に、電極２、正
孔輸送層３、発光層４、電子注入層５、透明電極６およ
び反射防止層７を設け、有機発光素子を得た。Thus, the electrode 2, the hole transport layer 3, the light emitting layer 4, the electron injection layer 5, the transparent electrode 6 and the antireflection layer 7 were provided on the substrate 1 to obtain an organic light emitting device.
【００３８】続いて、この有機発光素子において、直流
電圧を印加し、素子の発光特性を調べた。その結果この
素子は、透明電極６の上に反射防止層７を備えていない
素子に比して、発光取り出し効率が向上することを確認
した。Subsequently, in this organic light emitting device, a direct current voltage was applied to examine the light emitting characteristics of the device. As a result, it was confirmed that this device has improved emission efficiency as compared with a device in which the antireflection layer 7 is not provided on the transparent electrode 6.
【００３９】（実施例２）図３、第二の実施例を示す。
図中、１は基板であり、２は電極を示し、３は正孔輸送
層、４は発光層、５は電子注入層、６は透明電極７は反
射防止層、８は防湿層である。(Embodiment 2) FIG. 3 shows a second embodiment.
In the figure, 1 is a substrate, 2 is an electrode, 3 is a hole transport layer, 4 is a light emitting layer, 5 is an electron injection layer, 6 is a transparent electrode 7 is an antireflection layer, and 8 is a moisture-proof layer.
【００４０】実施例１と同様な条件にて、電極２である
クロム上にまず正孔輸送層３としてα―ＮＰＤを成膜
し、その上に、発光層４としてＡｌｑ３を成膜した。次
に、電子注入層５としてアルミリチウムを成膜した。そ
の後、前記電子注入層５の上に、酸化錫インジウム（Ｉ
ＴＯ）をスパッタ法にて成膜し、透明電極６を得た。そ
して、前記透明電極６の上に、防湿層として窒化シリコ
ン（ＳｉＮ）をスパッタ法にて成膜した。最後に、前記
防湿層８の上に、反射防止膜として、ＳｉＯ２をスパッ
タ法にて成膜した。Under the same conditions as in Example 1, α-NPD was first formed as a hole transport layer 3 on chromium as the electrode 2, and Alq3 was formed as a light emitting layer 4 on the film. Next, aluminum lithium was deposited as the electron injection layer 5. Then, on the electron injection layer 5, indium tin oxide (I
A transparent electrode 6 was obtained by forming a film of (TO) by a sputtering method. Then, silicon nitride (SiN) was formed as a moisture-proof layer on the transparent electrode 6 by a sputtering method. Finally, SiO2 was formed on the moisture-proof layer 8 as an antireflection film by a sputtering method.
【００４１】このようにして、基板１上に、電極２、正
孔輸送層３、発光層４、電子注入層５、透明電極６およ
び反射防止層７、防湿層８を設け、有機発光素子を得
た。In this manner, the electrode 2, the hole transport layer 3, the light emitting layer 4, the electron injection layer 5, the transparent electrode 6, the antireflection layer 7 and the moistureproof layer 8 are provided on the substrate 1 to form an organic light emitting device. Obtained.
【００４２】続いて、この有機発光素子において、直流
電圧を印加し、素子の発光特性を調べた。その結果この
素子は、防湿層８の上に反射防止層７を備えていない素
子に比して、発光の取り出し効率が向上することを確認
した。Subsequently, in this organic light emitting device, a direct current voltage was applied to examine the light emitting characteristics of the device. As a result, it was confirmed that this device has improved emission efficiency of emitted light as compared with a device in which the antireflection layer 7 is not provided on the moisture-proof layer 8.
【００４３】（実施例３）図４、第三の実施例を示す。
図中、１は基板であり、９は外光を遮光し、外光の反射
を防止する電極を示し、３は正孔輸送層、４は発光層、
５は電子注入層、６は透明電極７は反射防止層、８は防
湿層である。(Embodiment 3) FIG. 4 shows a third embodiment.
In the figure, 1 is a substrate, 9 is an electrode for blocking external light and preventing reflection of external light, 3 is a hole transport layer, 4 is a light emitting layer,
Reference numeral 5 is an electron injection layer, 6 is a transparent electrode 7 is an antireflection layer, and 8 is a moisture-proof layer.
【００４４】外光を遮光し、外光の反射を防止する電極
９として、カーボンのように黒色の光吸収性の材料を用
いた物か、もしくは、Ｂｌａｃｋ Ｌａｙｅｒ（Ｌｕｘ
ｅｌｌ社）技術のように光干渉を利用して外部から素子
に入射した光が反射することを防止する電極を用いても
よい。As the electrode 9 which shields the external light and prevents the reflection of the external light, a black light-absorbing material such as carbon is used, or Black Layer (Lux).
An electrode may be used to prevent the light incident on the element from the outside from being reflected by utilizing the optical interference as in the case of the technology of ELL).
【００４５】各電極及び各層の厚みは、視覚的に所望の
表示能力が発揮できるように発光の取り出し効率を考慮
して決めた。The thickness of each electrode and each layer was determined in consideration of the emission efficiency of light emission so that the desired display ability can be visually exhibited.
【００４６】まず、基板１上にスパッタ法により、クロ
ムを２００ｎｍの膜厚で成膜し、その上に酸化錫インジ
ウム（ＩＴＯ）を６２．１ｎｍ、その上に再びクロムを
４．３ｎｍ成膜し、クロム−ＩＴＯ−クロム三層からな
る光干渉を利用した外光を遮光し、外光の反射を防止す
る電極９を形成した。続いて、実施例１と同様な条件に
て、外光を遮光し、外光の反射を防止する電極９上にま
ず正孔輸送層３としてα―ＮＰＤを５０ｎｍの膜厚で成
膜し、その上に、発光層４としてＡｌｑ３を５０ｎｍの
膜厚で成膜した。次に、電子注入層５としてアルミリチ
ウムを１ｎｍの厚さに成膜した。その後、前記電子注入
層５の上に、酸化錫インジウム（ＩＴＯ）をスパッタ法
にて３９２ｎｍの膜厚で成膜し、透明電極６を得た。そ
して、前記透明電極６の上に、防湿層として窒化シリコ
ン（ＳｉＮ）をスパッタ法にて１７７５ｎｍの膜厚で成
膜した。最後に、前記防湿層８の上に、反射防止膜とし
て、ＳｉＯ２をスパッタ法にて９２．３ｎｍの膜厚で成
膜した。First, a chromium film was formed to a thickness of 200 nm on the substrate 1 by sputtering, indium tin oxide (ITO) was formed to a thickness of 62.1 nm, and a chromium film was formed to a thickness of 4.3 nm thereon. , The chrome-ITO-chrome three layers were formed to form an electrode 9 that shields external light by utilizing optical interference and prevents reflection of external light. Then, under the same conditions as in Example 1, α-NPD was first formed as a hole transport layer 3 with a thickness of 50 nm on the electrode 9 that shields external light and prevents reflection of external light. Then, Alq3 was formed into a film having a thickness of 50 nm as the light emitting layer 4. Next, aluminum lithium was formed into a film having a thickness of 1 nm as the electron injection layer 5. After that, indium tin oxide (ITO) was formed into a film having a thickness of 392 nm on the electron injection layer 5 by a sputtering method to obtain a transparent electrode 6. Then, on the transparent electrode 6, a silicon nitride (SiN) film having a thickness of 1775 nm was formed as a moisture-proof layer by a sputtering method. Finally, on the moisture-proof layer 8, an SiO 2 film having a thickness of 92.3 nm was formed as an antireflection film by a sputtering method.
【００４７】このようにして、基板１上に、外光を遮光
し、外光の反射を防止する電極９、正孔輸送層３、発光
層４、電子注入層５、透明電極６および反射防止層７、
防湿層８を設け、有機発光素子を得た。In this way, the electrode 9 for blocking the external light and preventing the reflection of the external light, the hole transport layer 3, the light emitting layer 4, the electron injection layer 5, the transparent electrode 6 and the antireflection are provided on the substrate 1. Layer 7,
The moisture-proof layer 8 was provided to obtain an organic light emitting device.
【００４８】続いて、この有機発光素子へ、反射防止層
の方向より光（外光）を入射させた際の反射率を測定し
た。その結果この素子は、４５０〜６５０ｎｍの波長領
域において、反射率が１．６％以下であった。また、反
射防止層だけを設けない比較用の有機発光素子も合わせ
て作成し、同様な反射率を測定したところ、その反射率
は１０〜１５％と高かった。Subsequently, the reflectance when light (external light) was made incident on the organic light emitting element from the direction of the antireflection layer was measured. As a result, this element had a reflectance of 1.6% or less in the wavelength region of 450 to 650 nm. A comparative organic light emitting device having no antireflection layer was also prepared, and the same reflectance was measured. The reflectance was as high as 10 to 15%.
【００４９】さらに、本実施例の有機発光素子に直流電
圧を印加し、素子の発光特性を調べた。その結果この素
子は、基板側の電極が外光を遮光し、外光の反射を防止
する電極であり、さらに防湿層の上に反射防止層が設け
られていることから、それら層が設けられていない比較
用の有機発光素子に較べ、発光のコントラストが大幅に
向上することも確認した。Further, a DC voltage was applied to the organic light emitting device of this example, and the light emitting characteristics of the device were examined. As a result, in this element, since the electrode on the substrate side shields external light and prevents reflection of external light, and since the antireflection layer is provided on the moisture-proof layer, these layers are provided. It was also confirmed that the contrast of light emission was significantly improved as compared with the organic light emitting device for comparison which was not used.
【００５０】更に図５に透明カバー部材をつけた別の実
施例を示す。１０は気層である空気層、１１は透明カバ
ー部材であるカバーガラスである。反射層はパシベーシ
ョン膜（ＳｉＮ）の屈折率２．１と空気層１．０の間の
屈折率１．５のＳｉＯ２層で形成されている。この実施
例では空気層とパシベーション膜（ＳｉＮ）の大きな屈
折率差による外光の反射光が軽減され発光素子のコント
ラストが改善されている。FIG. 5 shows another embodiment with a transparent cover member. Reference numeral 10 is an air layer which is an air layer, and 11 is a cover glass which is a transparent cover member. The reflective layer is formed of a SiO 2 layer having a refractive index of 1.5 between the refractive index 2.1 of the passivation film (SiN) and the air layer 1.0. In this embodiment, reflected light of external light due to a large difference in refractive index between the air layer and the passivation film (SiN) is reduced, and the contrast of the light emitting element is improved.
【００５１】[0051]
【発明の効果】本発明のように反射防止層を設けること
により、高効率な有機発光素子を提供できる。さらに、
コントラストのよい有機発光素子を提供できる。By providing an antireflection layer as in the present invention, a highly efficient organic light emitting device can be provided. further,
An organic light emitting device with good contrast can be provided.
【図１】従来の有機発光素子の積層構造例を示す模式図
である。FIG. 1 is a schematic view showing an example of a laminated structure of a conventional organic light emitting device.
【図２】本発明の有機発光素子の積層構造例を示す模式
図である。FIG. 2 is a schematic view showing an example of a laminated structure of the organic light emitting device of the present invention.
【図３】本発明の有機発光素子の積層構造例を示す模式
図である。FIG. 3 is a schematic view showing an example of a laminated structure of the organic light emitting device of the present invention.
【図４】本発明の有機発光素子の積層構造例を示す模式
図である。FIG. 4 is a schematic view showing an example of a laminated structure of the organic light emitting device of the present invention.
【図５】本発明の有機発光素子の積層構造例を示す模式
図である。FIG. 5 is a schematic view showing an example of a laminated structure of the organic light emitting device of the present invention.
１ 基板 ２ 電極 ３ 正孔輸送層 ４ 発光層 ５ 電子注入層 ６ 透明電極 ７ 反射防止層 ８ 防湿層 ９ 遮光電極 １０ 空気層 １１ カバーガラス 1 substrate 2 electrodes 3 Hole transport layer 4 Light emitting layer 5 Electron injection layer 6 transparent electrodes 7 Antireflection layer 8 moisture barrier 9 Light-shielding electrode 10 air layer 11 cover glass
Claims (5)
の間に有機層が設けられた有機発光素子であって、前記
一対の電極とは、基板側に設けられた一方の電極と、他
方の電極である透明電極であり、前記透明電極上に反射
防止層が設けられていることを特徴とする有機発光素
子。1. An organic light emitting device having a pair of electrodes facing each other and an organic layer provided between the pair of electrodes, wherein the pair of electrodes is one electrode provided on a substrate side, An organic light emitting element, which is a transparent electrode which is the other electrode, and an antireflection layer is provided on the transparent electrode.
を挟んで対向する透明カバー部材も有しており、かつ前
記反射防止層のその屈折率は、前記透明電極の屈折率と
前記気層の気体の屈折率との間の値をもつ材料からなる
ことを特徴とする請求項１に記載の有機発光素子。2. The organic light emitting device also has a transparent cover member facing the transparent electrode with a gas layer in between, and the refractive index of the antireflection layer is the same as the refractive index of the transparent electrode. The organic light emitting device according to claim 1, wherein the organic light emitting device is made of a material having a value between the refractive index of the gas in the gas layer and the refractive index of the gas in the gas layer.
の間に有機層が設けられた有機発光素子であって、前記
一対の電極とは、基板側に設けられた一方の電極と、他
方の電極である透明電極であり、前記透明電極上には、
防湿層が設けられており、前記防湿層上に反射防止層を
有することを特徴とする有機発光素子。3. An organic light emitting device having a pair of electrodes facing each other and an organic layer provided between the pair of electrodes, wherein the pair of electrodes is one electrode provided on the substrate side, A transparent electrode which is the other electrode, and on the transparent electrode,
An organic light-emitting device comprising a moisture-proof layer and an antireflection layer on the moisture-proof layer.
を挟んで対向する透明カバー部材も有しており、かつ前
記反射防止層のその屈折率は、前記透明電極の屈折率と
前記気層の気体の屈折率との間の値をもつ材料からなる
ことを特徴とする請求項３に記載の有機発光素子。4. The organic light emitting device also has a transparent cover member facing the transparent electrode with a gas layer in between, and the refractive index of the antireflection layer is the same as the refractive index of the transparent electrode. The organic light emitting device according to claim 3, wherein the organic light emitting device is made of a material having a value between the refractive index of the gas in the gas layer and the refractive index of the gas in the gas layer.
外光を遮光し、外光の反射を防止する電極であることを
特徴とする請求項１乃至３のいずれかに記載の有機発光
素子。5. The one electrode provided on the substrate side is
The organic light emitting device according to claim 1, wherein the organic light emitting device is an electrode that blocks external light and prevents reflection of external light.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002106905A JP2003303685A (en) | 2002-04-09 | 2002-04-09 | Organic luminous element |
| KR1020030022236A KR100563675B1 (en) | 2002-04-09 | 2003-04-09 | Organic luminescence device and organic luminescence device package |
| US11/099,623 US7187121B2 (en) | 2002-04-09 | 2005-04-06 | Organic luminescence device with anti-reflection layer and organic luminescence device package |
| US11/231,851 US7332859B2 (en) | 2002-04-09 | 2005-09-22 | Organic luminescence device with anti-reflection layer and organic luminescence device package |
| US11/640,269 US20070096641A1 (en) | 2002-04-09 | 2006-12-18 | Organic luminescence device with anti-reflection layer and organic luminescence device package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002106905A JP2003303685A (en) | 2002-04-09 | 2002-04-09 | Organic luminous element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003303685A true JP2003303685A (en) | 2003-10-24 |
Family
ID=29391098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002106905A Pending JP2003303685A (en) | 2002-04-09 | 2002-04-09 | Organic luminous element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003303685A (en) |
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