JP2003209118A6 - Active matrix organic electroluminescent display device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture a TFT of a drive unit for driving an organic EL element and / or a TFT of a drive IC connected to the drive unit by an SLS method, to improve uniformity of TFT characteristics and to have uniform luminance. An active matrix organic electroluminescent display device is provided.
A scan line arranged in one direction on a substrate, a data line arranged in a direction perpendicular to the scan line, and arranged in a direction parallel to the data line having a certain distance from the data line. Formed in a pixel region between the scan power line, the scan line, the data line, and the power line, and emits light according to an applied voltage, and switching for switching the data line signal according to the scan line signal A transistor and a driving transistor for applying a power source of the power line to the electroluminescent element according to a signal applied via the switching transistor, wherein the switching transistor or the driving transistor is formed by an SLS method. To do.
[Selection] Figure 9

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an active matrix organic light emitting display device, and more particularly, it has higher brightness uniformity than that of an existing low temperature polysilicon process using an SLS (Sequential lateral solidification) method, and a high degree of integration of an integrated circuit (IC). TECHNICAL FIELD The present invention relates to an active matrix organic light emitting display device that can be made and a manufacturing method thereof.
[0002]
[Prior art]
In recent years, with the development of flat panel displays, various types of display elements such as liquid crystal display devices (LCD), plasma display panels (PDP), electric field emission display devices (FED), and electrominisense (EL) have been developed. Yes. Such flat panel displays are divided into the following two methods according to their driving methods. One is the passive matrix system and the other is the active matrix system. The passive matrix method has a higher current level than the active matrix method. Therefore, in the current driving method such as FED and EL, the active matrix method is more advantageous than the passive matrix method that requires a larger current level even in the same line time.
[0003]
FIG. 1 is an equivalent circuit diagram of a unit pixel of a conventional two-transistor (2T) type active matrix organic light emitting display device (OED). As shown in FIG. 1, a circuit configuration of a unit pixel of a conventional active matrix organic light emitting display device includes a scan line 1 arranged in one direction and a data line 2 arranged in a direction perpendicular to the scan line 1. A power line 3 having a certain distance from the data line 2 and arranged in a direction parallel to the data line 2, and a pixel region between the scan line 1, the data line 2, and the power line 3. The electroluminescent device 7 emits light according to the applied voltage, the switching transistor 4 that switches the signal of the data line 2 according to the signal of the scan line 1, and the signal applied via the switching transistor 4. Driving transistor for applying power of the power line 3 to the electroluminescent element When, and a like capacitor 6 formed between the gate electrode of the power line 3 and the driving transistor 5.
[0004]
A unit pixel structure and a manufacturing method of a conventional active matrix organic light emitting display device having such a circuit configuration are as follows.
[0005]
FIG. 2 is a layout diagram of the active matrix organic light emitting display device of FIG. 1, and FIG. 3 is a cross-sectional view taken along line II ′ of FIG. In the region where the switching transistor 4 and the driving transistor 5 are formed on the substrate 10, island-shaped first and second semiconductor layers 4a and 5a are formed. At this time, the semiconductor layers 4a and 5a are formed by depositing amorphous silicon (a-Si: H) on the entire surface and crystallizing the amorphous silicon into polysilicon by a scanning method using an excimer laser. Then, the first and second semiconductor layers 4a and 5a are formed by selective removal.
[0006]
A gate insulating film 30 is formed on the entire surface of the substrate 10 including the semiconductor layers 4a and 5a. Next, a scan line 1 is formed in one direction so as to pass through the first semiconductor layer 4a on the gate insulating film 30, and a gate electrode 5b of the driving transistor is formed so as to pass through the second semiconductor layer 5a. The At this time, the scan line 1 and the gate electrode 5b of the driving transistor are formed to be separated from each other, and the gate electrode 5b overlaps with a power line 3 to be formed later to form a capacitor so as to form a capacitor. Widely formed.
[0007]
Source and drain regions are formed in the first and second semiconductor layers on both sides of the scan line 1 and the gate electrode 5b of the driving transistor by implanting impurity ions, respectively. Therefore, the switching transistor 4 is formed by the scan line 1 and the first semiconductor layer 4a, and the driving transistor 5 is formed by the gate electrode 5b and the second semiconductor layer 5a.
[0008]
An interlayer insulating film 50 is formed on the entire surface including the scan line 1 and the gate electrode 5b, and contact holes are formed in the source and drain regions of the first semiconductor layer 4a and the source regions of the gate electrode 5b and the second semiconductor layer 5a, respectively. Is done. Further, a data line 2 is formed on the interlayer insulating layer 50 so as to be connected to the source region of the first semiconductor layer 4a in a direction perpendicular to the scan line 1, and the data line 2 is formed in a direction perpendicular to the scan line 1. A power line 3 is connected to the source region of the second semiconductor layer 5a and overlaps the gate electrode 5b, and connects the drain region of the first semiconductor layer 4a and the gate electrode 5b. An electrode pattern 20 is formed. Here, a capacitor 6 is formed in a portion where the gate electrode 5b and the power line 3 overlap.
[0009]
A planarization insulating film 70 is formed on the entire surface of the substrate 10, and a contact hole is formed in the drain region of the second semiconductor layer 5a on the planarization insulating film 70 so as to be connected to the drain region. The electroluminescent element 7 is formed. A method for manufacturing a conventional active matrix organic light emitting display device having such a structure will be described below.
[0010]
Amorphous silicon (a-Si: H) is deposited on the substrate 10, the amorphous silicon is crystallized with polysilicon using an excimer laser, and then selectively removed to remove the switching transistor 4 and the driving transistor. Island-shaped first and second semiconductor layers 4a and 5a are formed in a region where 5 is to be formed. At this time, a method of crystallizing polysilicon by scanning the amorphous silicon with an excimer laser will be described in detail as follows.
[0011]
FIG. 4 is a plan view for explaining a crystallization method using a conventional laser annealing method (scanning method). That is, a laser beam having a width of about 0.5 mm or less and a length smaller than that of the liquid crystal display panel is moved from one side of the panel in the vertical direction by 25 μm / pulse and irradiated to amorphous silicon by a scanning method. Crystallize with polysilicon.
[0012]
A gate insulating film 30 is formed on the entire surface of the substrate 10 including the semiconductor layers 4a and 5a, and a metal layer is deposited on the entire surface. Then, the metal layer is selectively removed, a scan line 1 is formed on the gate insulating film 30 in one direction so as to pass through the first semiconductor layer 4a, and at the same time, pass through the second semiconductor layer 5a. Then, the gate electrode 5b of the driving transistor is formed. At this time, the scan line 1 and the gate electrode 5b of the driving transistor are formed so as to be isolated from each other, and the gate electrode 5b is overlapped with a power line 3 to be formed later to form a capacitor. A wide area is formed.
[0013]
Impurities (P +) are ion-implanted into the first and second semiconductor layers 4a and 5a using the scan line 1 and the gate electrode 5b of the driving transistor as a mask to form source and drain regions of the switching transistor and the driving transistor. To do. Therefore, the switching transistor 4 is formed by the scan line 1 and the first semiconductor layer 4a, and the driving transistor 5 is formed by the gate electrode 5b and the second semiconductor layer 5a.
[0014]
An interlayer insulating film 50 is deposited on the entire surface including the scan line 1 and the gate electrode 5b so that the source and drain regions of the first semiconductor layer 4a and the source regions of the gate electrode 5b and the second semiconductor layer 5a are exposed. The interlayer insulating film 50 and the gate insulating film 30 are selectively removed to form contact holes, respectively. Then, a metal layer is deposited on the entire surface, selectively removed, and connected to the source region of the first semiconductor layer 4a in the direction perpendicular to the scan line 1 on the interlayer insulating film 50. A line 2 is formed. At the same time, a power line 3 is formed so as to be connected to the source region of the second semiconductor layer 5a in a direction perpendicular to the scan line 1 and overlap the gate electrode 5b. An electrode pattern 20 is formed to connect the drain region of the semiconductor layer 4a and the gate electrode 5b.
[0015]
A planarization insulating film 70 is formed on the entire surface, a contact hole is formed in the drain region of the second semiconductor layer 5a on the planarization insulating film 70, and the electroluminescent device is connected to the drain region. 7 is formed.
[0016]
[Problems to be solved by the invention]
However, the conventional active matrix organic light emitting display device and the manufacturing method thereof have the following problems.
[0017]
FIG. 5 shows a grain boundary and carrier movement diagram of polysilicon obtained by a conventional scanning crystallization method. That is, since amorphous silicon is crystallized using an excimer laser in order to form the first and second semiconductor layers, the grain boundary is irregularly formed in a direction perpendicular to the channel direction. Therefore, the operating voltage of each transistor becomes non-uniform, and a waveform phenomenon occurs on the screen. That is, amorphous silicon is vapor-deposited on a substrate, and amorphous silicon is crystallized by a scanning method using an excimer laser to obtain polysilicon. At this time, since the amorphous silicon is bonded with hydrogen (H) at a predetermined percentage, the hydrogen must be removed and the silicon must be crystallized while maintaining a minimum temperature so that the substrate does not deform. Therefore, it is not easy to realize the process conditions.
[0018]
In addition, since the scanning method using the laser is a method in which a predetermined pulse is applied per scanning line, the laser is not continuously irradiated and the energy of the laser irradiated per line is not uniform. A waveform is formed in the direction. Therefore, the characteristics of the TFT per scanning line become non-uniform due to the waveform, which is reflected in the waveform of the display screen of the organic electroluminescent element, and affects the non-uniformity of luminance. In other words, the size and crystal state of the Si grains that form the semiconductor layer serving as the channel of the current path become non-uniform, so the characteristics of the TFT driving each pixel change and the same gray level is applied. However, the magnitude of the current flowing through each TFT changes, which causes a difference in pixel brightness.
[0019]
In addition, the size of the Si grains is not constant, and the protrusions at the grain boundary surface cause nonuniformity in characteristics when manufacturing thin film transistors (TFTs), resulting in nonuniform luminance.
[0020]
In addition, there is a compensation circuit technology that uses four TFTs in the pixel portion in order to compensate for the uneven brightness, but this technology increases the defect rate in the manufacturing process and increases the number of TFTs. Accordingly, the aperture ratio decreases.
[0021]
Therefore, the present invention has been made in view of the above problems, and is a drive integrated circuit (and / or a drive integrated circuit connected to the drive unit) for driving an organic electroluminescence (EL) element. IC) TFT is manufactured by SLS (Sequential Lateral Solidification) method, and an object is to provide an active matrix organic light emitting display device that realizes uniform brightness by increasing uniformity of TFT characteristics. .
[0022]
Another advantage of the present invention is that the driver IC (external drive circuit) TFT is manufactured by the SLS method, and pixels and drive circuits are integrated on a single substrate at a higher density, thereby reducing the size of the active IC. It is to provide a matrix organic electroluminescent display device.
[0023]
[Means for Solving the Problems]
To achieve the above object, an active matrix organic light emitting display device according to the present invention includes a scan line arranged in one direction on a substrate, a data line arranged in a direction perpendicular to the scan line, and a data An electric field having a certain distance from the line and formed in a power line arranged in a direction parallel to the data line and a pixel region between the scan line, the data line, and the power line and emitting light according to an applied voltage A light emitting device, a switching transistor for switching the data line signal in accordance with a scan line signal, and a driving transistor for applying a power source of the power line to the electroluminescent device in accordance with a signal applied through the switching transistor. Equipped with switching transistor or driving transistor Njisuta is characterized in that it is formed by the SLS method.
[0024]
An active matrix organic light emitting display device according to the present invention includes a plurality of scan lines to which scan signals are sequentially applied on a substrate, a plurality of scan lines that are arranged to intersect the scan lines, and a data line that applies a data signal. Each pixel region defined by the scan line and the data line, an organic EL element formed in a part of the pixel region, the scan line and the data line in the other part of the pixel region, and the organic A gate driver IC and data formed by using the SLS method by applying the scan signal and the data signal to the driving unit that drives the organic EL element and is connected to the EL element, and the scan line and the data line, respectively. And a drive IC.
[0025]
In order to achieve the above object, a method of manufacturing an active matrix organic light emitting display device according to the present invention comprises depositing amorphous silicon on a substrate and crystallizing the amorphous silicon with polysilicon using an SLS method. Selectively removing the crystallized polysilicon to form first and second semiconductor layers in a region where the switching transistor and the driving transistor are formed, and a gate insulating film on the entire surface including each semiconductor layer Forming a scan line in one direction so as to pass through the first semiconductor layer on the gate insulating film, and simultaneously forming a gate electrode of the driving transistor so as to pass through the second semiconductor layer; A switching transistor and a driving transistor are formed on the first and second semiconductor layers on both sides of the scan line and the gate electrode of the driving transistor. Forming a source and drain region of the star; and depositing an interlayer insulating film on the entire surface to expose the source and drain region of the first semiconductor layer, the gate electrode of the driving transistor, and the source region of the second semiconductor layer. Forming a contact hole, and forming a data line on the interlayer insulating layer so as to be connected to the source region of the first semiconductor layer in a direction perpendicular to the scan line, and at the same time perpendicular to the scan line. A power line is formed to be connected to the source region of the second semiconductor layer in a direction and overlap the gate electrode of the driving transistor, and the drain region of the first semiconductor layer, the gate electrode of the driving transistor, Forming an electrode pattern so as to connect the contact hole, and a contact hole in the drain region of the second semiconductor layer. Forming on the entire surface planarization insulating film so as to have, characterized in that it comprises a step of forming the electroluminescent device to be coupled to the drain region in the planarization insulating film.
[0026]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of an active matrix organic light emitting display device according to the present invention will be described in detail with reference to the drawings.
[0027]
First, an equivalent circuit and a layout of a unit pixel of an active matrix organic light emitting display device according to the present invention are as shown in FIGS. That is, the circuit configuration of the unit pixel of the active matrix organic light emitting display device according to the present invention includes a scan line 1 arranged in one direction and a direction perpendicular to the scan line 1 as shown in FIG. Data line 2, a power line 3 arranged in parallel to the data line 2 at a certain distance from the data line 2, and pixels between the scan line 1, the data line 2 and the power line 3 An electroluminescent element 7 that is formed in the region and emits light according to an applied voltage, a switching transistor 4 that switches a signal of the data line 2 according to a signal of the scan line 1, and is applied via the switching transistor 4 The driving line for applying the power source of the power line 3 to the electroluminescent element according to the signal And Njisuta 5, and a like capacitor 6 formed between the gate electrode of the power line 3 and the driving transistor 5.
[0028]
In the present invention, a pixel unit in which a plurality of unit pixels configured as shown in FIGS. 1 to 3 are arranged, and a gate driver IC and a data driver IC for driving them are arranged on the same substrate. The thin film transistors in the driver ICs as well as the thin film transistors in the pixel portion are manufactured by the SLS method so that the thin film transistors have uniform characteristics.
[0029]
FIG. 6 shows an active matrix organic light emitting display device according to the first embodiment of the present invention, in which the TFT of the pixel portion is formed using the SLS method. In the example shown in FIG. 6, a gate drive IC (GIC) and a data drive IC (DIC) in which a pixel portion PS is formed on a substrate and a drive circuit for driving the pixel portion PS is integrated are external to the substrate. It is formed. Accordingly, the active layer of the thin film transistor in the pixel portion is crystallized by the SLS method, and the active layer of the TFT of the gate drive IC and the data drive IC is formed by a low temperature polysilicon (LTPS) low temperature process and an excimer laser method.
[0030]
FIG. 7 shows an active matrix organic light emitting display device according to a second embodiment of the present invention, in which a TFT of a drive IC for driving the pixel portion and the pixel portion is formed by the SLS method.
As shown in FIG. 7, when the pixel portion, the gate, and the data drive IC are formed on the same substrate, the pixel portion and the TFT semiconductor layer of each drive IC are crystallized by the SLS method. Of course, even in the case of FIG. 7, the thin film transistor semiconductor layer of the pixel portion may be formed by the LTPS low temperature process and the excimer laser method (scanning method), and the TFT semiconductor layer of each drive IC may be formed by the SLS method. good.
[0032]
In each embodiment of the present invention, the SLS method is formed of any one of SLS high-throughput polysilicon, SLS directional polysilicon, and SLS x-Si (crystal-Si).
[0033]
Accordingly, a method of manufacturing the thin film transistor of the active matrix organic light emitting display device according to the present invention will be described in detail as follows. As shown in FIGS. 2 and 3, first and second semiconductor layers 4a and 5a are formed in an island shape in a region on the substrate 10 where the thin film transistors 4 and 5 are formed. At this time, the semiconductor layers 4a and 5a are formed by depositing amorphous silicon (a-Si: H) on the entire surface and crystallizing the amorphous silicon with polysilicon by a scanning method using an excimer laser. Then, the first and second semiconductor layers 4a and 5a are formed by selective removal.
[0034]
A gate insulating film 30 is formed on the entire surface of the substrate 10 including the semiconductor layers 4a and 5a. A scan line 1 is formed in one direction so as to pass through the first semiconductor layer 4a on the gate insulating film 30, and a gate electrode 5b of the driving transistor is formed so as to pass through the second semiconductor layer 5a. . At this time, the scan line 1 and the gate electrode 5b of the driving transistor are formed to be separated from each other, and the gate electrode 5b overlaps with a power line 3 to be formed later to form a capacitor so as to form a capacitor. Widely formed.
[0035]
Source and drain regions are formed in the first and second semiconductor layers on both sides of the scan line 1 and the gate electrode 5b of the driving transistor by impurity ion implantation, respectively. Therefore, the switching transistor 4 is formed by the first scan line 1 and the first semiconductor layer 4a, and the driving transistor 5 is formed by the gate electrode 5b and the second semiconductor layer 5a.
[0036]
An interlayer insulating film 50 is formed on the entire surface including the scan line 1 and the gate electrode 5b, and contact holes are formed in the source and drain regions of the first semiconductor layer 4a and the source regions of the gate electrode 5b and the second semiconductor layer 5a, respectively. Is done. A data line 2 is formed on the interlayer insulating layer 50 to be connected to the source region of the first semiconductor layer 4a in a direction perpendicular to the scan line 1, and the data line 2 is formed in a direction perpendicular to the scan line 1. A power line 3 is connected to the source region of the second semiconductor layer 5a and overlaps the gate electrode 5b, and an electrode is connected to connect the drain region of the first semiconductor layer 4a and the gate electrode 5b. A pattern 20 is formed. Here, a capacitor 6 is formed at a portion where the gate electrode 5b and the power line 3 overlap. A planarization insulating film 70 is formed on the entire surface, a contact hole is formed in the drain region of the second semiconductor layer 5a on the planarization insulating film 70, and the electroluminescent element 7 is connected to the drain region. Is formed.
[0037]
Hereinafter, a method for manufacturing the active matrix organic light emitting display device of the present invention having such a structure will be described.
[0038]
Amorphous silicon (a-Si: H) is deposited on the substrate 10 and the amorphous silicon is crystallized with polysilicon by the SLS method, and then selectively removed to form the switching transistor 4 and the driving transistor 5. First and second semiconductor layers 4a and 5a are formed in an island shape in the region to be formed. At this time, a specific method for crystallizing the amorphous silicon by the SLS method is as follows.
[0039]
FIG. 8 is a plan view for explaining a method of crystallization by the SLS method according to the present invention, and FIG. 9 is a plan view of polysilicon crystallized by the SLS method of the present invention. A beam having a size of about 2 μm × 10 mm is crystallized with polysilicon by irradiating amorphous silicon by SLS method so that the exposure area / pulse is 10 × 10 mm 2 or less.
[0040]
That is, as shown in FIG. 8, the primary amorphous silicon substrate is irradiated with a beam at regular intervals to crystallize the amorphous silicon, and then the side surface of the portion crystallized by the primary irradiation. The method of secondary beam irradiation is repeated to crystallize all amorphous silicon.
[0041]
When the amorphous silicon layer is crystallized by such a method, as shown in FIG. 9, the crystallized polysilicon is formed in a direction in which the grain boundary is parallel to the channel direction. improves.
[0042]
A gate insulating film 30 is formed on the entire surface of the substrate 10 including the semiconductor layers 4a and 5a, and a metal layer is deposited on the entire surface. Then, the metal layer is selectively removed, a scan line 1 is formed on the gate insulating film 30 in one direction so as to pass through the first semiconductor layer 4a, and at the same time, pass through the second semiconductor layer 5a. Then, the gate electrode 5b of the driving transistor is formed. At this time, the scan line 1 and the gate electrode 5b of the driving transistor are formed so as to be separated from each other, and the gate electrode 5b is overlapped with a power line 3 to be formed later to form a capacitor. Widely form.
[0043]
Impurities (P +) are ion-implanted into the first and second semiconductor layers 4a and 5a using the scan line 1 and the gate electrode 5b of the driving transistor as a mask to form source and drain regions of the switching transistor and the driving transistor. To do. Therefore, the switching transistor 4 is formed by the scan line 1 and the first semiconductor layer 4a, and the driving transistor 5 is formed by the gate electrode 5b and the second semiconductor layer 5a.
[0044]
An interlayer insulating film 50 is deposited on the entire surface including the scan line 1 and the gate electrode 5b so that the source and drain regions of the first semiconductor layer 4a and the source regions of the gate electrode 5b and the second semiconductor layer 5a are exposed. The interlayer insulating film 50 and the gate insulating film 30 are selectively removed to form contact holes, respectively.
[0045]
Then, a metal layer is deposited on the entire surface, selectively removed, and the data line is connected to the source region of the first semiconductor layer 4a on the interlayer insulating film 50 in a direction perpendicular to the scan line 1. 2 is formed, and at the same time, a power line 3 is formed so as to be connected to the source region of the second semiconductor layer 5a in a direction perpendicular to the scan line 1 and to be overlapped with the gate electrode 5b. An electrode pattern 20 is formed so as to connect the drain region of the layer 4a and the gate electrode 5b.
[0046]
A planarization insulating film 70 is formed on the entire surface, a contact hole is formed in the drain region of the second semiconductor layer 5a on the planarization insulating film 70, and the electroluminescent device is connected to the drain region. 7 is formed.
[0047]
【The invention's effect】
As described above, the active matrix organic light emitting display device according to the present invention has the following effects.
[0048]
First, since the TFT of the driving unit for driving the organic EL element and / or the drive IC connected to the driving unit manufactures the TFT by the SLS method, the uniformity of the TFT characteristics is increased, and the luminance is uniform. The aperture ratio of the element can be increased by using a small number of transistors. Second, the TFT of the driver IC (external drive circuit) is manufactured by the SLS method, and the pixel and the drive circuit are integrated on one substrate, so that the element can be miniaturized.
[Brief description of the drawings]
FIG. 1 is an equivalent circuit diagram of a unit pixel of a conventional 2T active matrix organic light emitting display device.
FIG. 2 is a layout diagram of the active matrix organic light emitting display device of FIG. 1;
3 is a cross-sectional view taken along the line II ′ of FIG.
FIG. 4 is a plan view for explaining a crystallization method by a conventional scanning method.
FIG. 5 is a plan view of polysilicon crystallized by a conventional scanning method.
FIG. 6 illustrates that the TFT of the pixel unit is formed using the SLS method in the active matrix organic light emitting display device according to the first embodiment of the present invention.
FIG. 7 shows an active matrix organic light emitting display device according to a second embodiment of the present invention, in which a TFT of a drive IC for driving the pixel portion and the pixel portion is formed by the SLS method.
FIG. 8 is a diagram for explaining a crystallization method using an SLS method according to the present invention.
FIG. 9 is a plan view of polysilicon crystallized by the SLS method of the present invention.

Claims (14)

A scan line arranged in one direction on the substrate;
Data lines arranged in a direction perpendicular to the scan lines;
A power line having a certain distance from the data line and arranged in a direction parallel to the data line;
An electroluminescent element that is formed in a pixel region between the scan line, the data line, and the power line and emits light according to an applied voltage;
A switching transistor for switching the data line signal in accordance with the scan line signal;
A driving transistor for applying a power source of the power line to the electroluminescent element according to a signal applied via the switching transistor;
An active matrix organic light emitting display device, wherein the switching transistor or the driving transistor is formed by a continuous side surface crystal method.   2. The active matrix organic light emitting display device according to claim 1, wherein the SLS method forms one of high throughput polysilicon, SLS directional polysilicon, and SLS crystal silicon.   2. The active matrix organic light emitting display device according to claim 1, further comprising a capacitor for accumulating charges based on a voltage difference between a data signal applied to the data line and a voltage supplied by the power. A gate drive IC for applying a scan signal to each of the scan lines;
2. The active matrix organic light emitting display device according to claim 1, further comprising a data drive IC for applying a data signal to each data line.   5. The active matrix organic light emitting display device according to claim 4, wherein each of the gate drive IC and the data drive IC includes a plurality of thin film transistors, and each thin film transistor is formed by an SLS method.   5. The active matrix organic light emitting display device according to claim 4, wherein the SLS method forms one of SLS high throughput polysilicon, SLS directional polysilicon, and SLS crystal silicon. Depositing amorphous silicon on the substrate, and crystallizing the amorphous silicon with polysilicon by an SLS method;
Selectively removing the crystallized polysilicon to form first and second semiconductor layers in a region where a switching transistor and a driving transistor are formed;
Forming a gate insulating film on the entire surface including each of the semiconductor layers;
Forming a scan line in one direction so as to pass through the first semiconductor layer on the gate insulating film and simultaneously forming a gate electrode of the driving transistor so as to pass through the second semiconductor layer;
Forming source and drain regions of the switching transistor and the driving transistor in the first and second semiconductor layers on both sides of the scan line and the gate electrode of the driving transistor;
Depositing an interlayer insulating film on the entire surface, and forming contact holes so as to expose the source and drain regions of the first semiconductor layer, the gate electrode of the driving transistor, and the source region of the second semiconductor layer;
A data line is formed on the interlayer insulating film to be connected to the source region of the first semiconductor layer in a direction perpendicular to the scan line, and the source region of the second semiconductor layer is perpendicular to the scan line. Forming a power line so as to overlap with the gate electrode of the driving transistor, and forming an electrode pattern to connect the drain region of the first semiconductor layer and the gate electrode of the driving transistor. When,
Forming a flattening insulating film on the entire surface so as to have a contact hole in the drain region of the second semiconductor layer;
Forming an electroluminescent element on the insulating film for planarization so as to be connected to the drain region, and a method for manufacturing an active matrix organic electroluminescent display device.   8. The method of claim 7, wherein the scan line and the gate electrode of the driving transistor are formed to be isolated from each other.   8. The method of claim 7, wherein the gate electrode is formed to have a certain area so as to overlap the power line to form a capacitor.   The SLS crystallization is performed by irradiating amorphous silicon with a beam having a size of about 2 μm × 10 mm so that the exposure area per pulse is 10 × 10 mm 2 or less, and crystallizing the polysilicon. The method of manufacturing an active matrix organic light emitting display device according to claim 7, wherein:   In the SLS crystallization method, the primary amorphous silicon substrate is irradiated with a beam at regular intervals to crystallize the amorphous silicon, and then the side surface of the portion crystallized by the primary irradiation. 8. The method of manufacturing an active matrix organic light emitting display device according to claim 7, wherein the second amorphous irradiation is repeated to crystallize all amorphous silicon. Scanlines arranged in one direction;
Data lines arranged substantially perpendicular to the scan lines;
A power line having a certain distance from the data line and arranged substantially parallel to the data line;
An electroluminescent device formed in a pixel region between the scan line, the data line, and the power line;
A switching transistor for switching the data line signal in accordance with the scan line signal;
An active matrix organic electric field comprising a driving transistor for applying a power source of the power line to the electroluminescent device according to a signal applied through the switching transistor, the driving transistor being formed by a continuous side surface crystal method. Luminescent display device.   The active matrix organic light emitting display device according to claim 12, wherein the SLS method is one of high throughput polysilicon, SLS directional polysilicon, and SLS crystal silicon.   13. The active matrix organic light emitting display device according to claim 12, further comprising a capacitor for accumulating charges based on a difference between a voltage of a data signal applied to the data line and a voltage supplied by the power.

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