JP2003277171A - METHOD FOR PRODUCING Si ALLOY-BASE COMPOSITE MATERIAL - Google Patents
METHOD FOR PRODUCING Si ALLOY-BASE COMPOSITE MATERIALInfo
- Publication number
- JP2003277171A JP2003277171A JP2002075580A JP2002075580A JP2003277171A JP 2003277171 A JP2003277171 A JP 2003277171A JP 2002075580 A JP2002075580 A JP 2002075580A JP 2002075580 A JP2002075580 A JP 2002075580A JP 2003277171 A JP2003277171 A JP 2003277171A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- composite material
- producing
- sic
- base composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Manufacture Of Alloys Or Alloy Compounds (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、Si合金基複合材
料の製造方法に関し、特に微細な加工を必要とする精密
部品として好適に用いられるSi合金基複合材料の製造
方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a Si alloy-based composite material, and more particularly to a method for manufacturing a Si alloy-based composite material that is preferably used as a precision component that requires fine processing.
【0002】[0002]
【従来の技術】セラミックス粒子またはセラミックス繊
維で強化された金属基複合材料は、高剛性、低熱膨張
性、耐摩耗性等のセラミックスとしての優れた特性と延
性、高靭性、高熱伝導性等の金属としての優れた特性の
両方を兼ね備えた材料として知られている。2. Description of the Related Art A metal matrix composite material reinforced with ceramic particles or ceramic fibers has excellent characteristics as a ceramic such as high rigidity, low thermal expansion and wear resistance, and a metal having excellent ductility, high toughness and high thermal conductivity. It is known as a material having both excellent properties as
【0003】特に、強化材としてSiCを用い、金属と
してSiを用いたSi基複合材料はその優れた特性によ
り精密部品を中心とした分野への適用が期待されてい
る。したがって、その製造方法としては種々の方法が提
案されているが、その多くがSiCとCで作製した成形
体に溶融したSiを浸透させる製造方法を基本とするも
のである。In particular, Si-based composite materials using SiC as a reinforcing material and Si as a metal are expected to be applied to the field of precision parts due to their excellent characteristics. Therefore, various methods have been proposed as the manufacturing method, but most of them are based on the manufacturing method in which molten Si is permeated into a molded body made of SiC and C.
【0004】[0004]
【発明が解決しようとする課題】しかし、このSi基複
合材料は、その構成材料であるSiCとSiがともに脆
い材料であることから微細な加工が困難であるという欠
点を有していた。こうした問題に対し、国際公開番号W
O 01/07377号公報にて開示されているように、Siと
少なくとも一種の金属からなるSi合金を浸透させる複
合材料の製造方法が提案されている。しかしながら、こ
の方法では、成形体中のC量がSiCに対して1から1
0質量%と比較的多いため、浸透に際して、Si以外の
他の金属とCの反応により脆い炭化物が形成され、得ら
れた複合材料が脆くなるという課題があった。特に、他
の金属としてAlを用いた場合はAl4C3が生成し、こ
れが水分と反応するため製品の寸法精度に悪影響を及ぼ
すという課題もあった。However, this Si-based composite material has a drawback that it is difficult to perform fine processing because both the constituent materials, SiC and Si, are brittle materials. International publication number W
As disclosed in Japanese Patent O 01/07377, a method for producing a composite material in which Si and a Si alloy composed of at least one metal are permeated has been proposed. However, in this method, the amount of C in the compact is 1 to 1 relative to SiC.
Since it is relatively large at 0% by mass, there is a problem that brittle carbides are formed by the reaction of C with a metal other than Si during penetration, and the obtained composite material becomes brittle. In particular, when Al is used as another metal, Al 4 C 3 is generated and reacts with water, which adversely affects the dimensional accuracy of the product.
【0005】本発明者らは、上記課題を解決するために
鋭意研究を行い発明を完成したものであり、その目的
は、Siと少なくとも一種の金属からなるSi合金を成
形体に浸透させることにより従来のSi基複合材料の脆
さを改善でき、さらに、脆い炭化物の生成を抑制するこ
とが可能なSi合金基複合材料の製造方法を提供するこ
とである。The inventors of the present invention have conducted intensive research to solve the above problems and completed the invention. The purpose of the invention is to make Si and at least one kind of metal Si alloy permeate into a compact. It is an object of the present invention to provide a method for producing a Si alloy-based composite material, which can improve the brittleness of a conventional Si-based composite material and can suppress the formation of brittle carbide.
【0006】[0006]
【課題を解決するための手段】上記した本発明の目的
は、SiCとCを用いて成形した成形体に、SiとA
l、Mg、Ni、Ti、Zr、Fe、CrおよびSnか
ら構成される群から選ばれた少なくとも一種の金属から
なるSi合金を浸透させるSi合金基複合材料の製造方
法において、前記成形体中のC量がSiCに対して1質
量%未満であることを特徴とするSi合金基複合材料の
製造方法によって達成される。SUMMARY OF THE INVENTION The above-mentioned object of the present invention is to provide a molded body molded using SiC and C with Si and A
In the method for producing a Si alloy-based composite material in which a Si alloy made of at least one metal selected from the group consisting of 1, Mg, Ni, Ti, Zr, Fe, Cr and Sn is infiltrated, It is achieved by a method for producing a Si alloy-based composite material, wherein the amount of C is less than 1% by mass based on SiC.
【0007】また、本発明の目的は、前記した成形体と
Si合金とを炉内に設置し、真空度5Torr以下で、かつ
温度600〜2000℃で加熱することを特徴とするS
i合金基複合材料の製造方法によって達成される。An object of the present invention is to place the above-mentioned compact and Si alloy in a furnace and heat at a vacuum degree of 5 Torr or less and at a temperature of 600 to 2000 ° C.
This is achieved by a method of manufacturing an i-alloy matrix composite material.
【0008】[0008]
【発明の実施の形態】本発明では、成形体に浸透させる
金属としてSiとAl、Mg、Ni、Ti、Zr、F
e、CrおよびSnから構成される群から選ばれた少な
くとも一種の金属からなるSi合金を用いることを提案
している。これは、従来の構成材料であるSiが脆い材
料であることから微細な加工が困難であるという欠点を
有していたが、これを前記した金属と合金化することで
脆さが改善できるからである。ここで、製造の容易さと
種々の物性の面で、SiとAlの合金を用いることが特
に好ましい。BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, Si and Al, Mg, Ni, Ti, Zr, and F are used as metals to be infiltrated into a compact.
It has been proposed to use a Si alloy made of at least one metal selected from the group consisting of e, Cr and Sn. This has a drawback that it is difficult to perform fine processing because Si, which is a conventional constituent material, is a brittle material, but brittleness can be improved by alloying this with the above-mentioned metal. Is. Here, it is particularly preferable to use an alloy of Si and Al in terms of ease of production and various physical properties.
【0009】また本発明では、成形体中のC量がSiC
に対して1質量%未満であることを提案している。ここ
で、成形体中にCを添加する理由は、SiCの表面は通
常SiO2に覆われており、これが溶融したSi合金と
の濡れ性を阻害し成形体への溶融合金の浸透を邪魔して
いたが、このSiO2をCを添加することにより加熱過
程で還元除去できる作用があるからである。しかし、成
形体中のC量がSiCに対して1質量%以上であると、
前記したように脆い炭化物が形成され、得られる複合材
料が脆くなるため好ましくない。すなわち、市販のSi
C粉末の表面に形成されたSiO2を還元除去するに
は、成形体中のC量がSiCに対して1質量%未満のC
量であることが好ましい。ここで、Cの添加量は、さら
に好ましくは、SiC粉末に対して0.1〜0.6質量
%とすることが好ましいが、0.1質量%未満だとSi
O2を加熱過程で還元除去できない。Further, in the present invention, the amount of C in the compact is SiC.
To less than 1% by mass. Here, the reason for adding C to the compact is that the surface of SiC is usually covered with SiO 2 , which impedes the wettability with the molten Si alloy and impedes the penetration of the molten alloy into the compact. However, this is because the addition of C to SiO 2 has the action of reducing and removing it in the heating process. However, if the amount of C in the compact is 1 mass% or more with respect to SiC,
As described above, brittle carbides are formed and the resulting composite material becomes brittle, which is not preferable. That is, commercially available Si
In order to reduce and remove SiO 2 formed on the surface of C powder, the amount of C in the compact is less than 1% by mass relative to SiC.
It is preferably the amount. Here, the addition amount of C is more preferably 0.1 to 0.6% by mass with respect to the SiC powder, but if less than 0.1% by mass, Si is added.
O 2 cannot be reduced and removed during the heating process.
【0010】本発明においてSiO2の除去を促進する
ために真空中で昇温することが好ましく、その真空度は
5Torr以下、特に好ましくは、3Torr以下である。か
つ、温度600〜2000℃で加熱することが好まし
い。その理由は、加熱温度が600度より低いとSi合
金の浸透が不十分となり、加熱温度が2000℃より高
いと金属の蒸発量が多くなるため好ましくないからであ
る。In the present invention, it is preferable to raise the temperature in a vacuum in order to accelerate the removal of SiO 2. The degree of vacuum is 5 Torr or less, particularly preferably 3 Torr or less. Moreover, it is preferable to heat at a temperature of 600 to 2000 ° C. The reason is that if the heating temperature is lower than 600 ° C., the penetration of the Si alloy becomes insufficient, and if the heating temperature is higher than 2000 ° C., the amount of evaporated metal increases, which is not preferable.
【0011】さらに、本発明においてSi合金の浸透を
促進するために成形体中にSi粉末を添加してもよく、
この方法も本発明に包含される。この場合、Si粉末の
添加量は成形体重量の2〜80質量%とすることが好ま
しいまた、成形体にCを添加する変わりに、B4C、T
iC、VC、CrC等の金属炭化物を添加しても良いこ
とは勿論である。Further, in the present invention, Si powder may be added to the molded body in order to promote the penetration of the Si alloy,
This method is also included in the present invention. In this case, the amount of Si powder added is preferably 2 to 80% by mass of the weight of the compact, and instead of adding C to the compact, B 4 C, T
Of course, metal carbides such as iC, VC, CrC may be added.
【0012】以下に、本発明の具体的な実施例と比較例
により、本発明を詳細に説明する。The present invention will be described in detail below with reference to specific examples and comparative examples of the present invention.
【0013】[実施例]SiC粉末(信濃電気精錬製、
粒径60μm)100重量部に対してC粉末を0.6重量部(S
iCに対して0.6質量%)添加し、混合、成形して成形
体を作製した。この成形体とSi−Al合金(Si/A
lの質量比は40/60)とをともに炉内に設置し、真
空度3Torr、温度1600℃で加熱してSi合金を浸透させ
てSi合金基複合材料を作製した。この材料の組成をX
線回折で調べたところAl4C3は認められなかった。得
られた複合材料に機械加工により幅0.5mm、長さ1
00mmの溝を3本形成したところ、エッジの欠けなど
の欠陥は生じなかった。[Example] SiC powder (manufactured by Shinano Denki Smelting,
0.6 parts by weight of C powder to 100 parts by weight of particle size (60 μm) (S
0.6% by mass relative to iC) was added, mixed and molded to prepare a molded body. This compact and Si-Al alloy (Si / A
and a mass ratio of 40/60) were placed in a furnace and heated at a vacuum degree of 3 Torr and a temperature of 1600 ° C. to infiltrate the Si alloy to produce a Si alloy-based composite material. The composition of this material is X
Al 4 C 3 was not found when examined by line diffraction. The resulting composite material is machined to a width of 0.5 mm and a length of 1.
When three 00 mm grooves were formed, defects such as chipping of edges did not occur.
【0014】[比較例]C粉末の添加量を2.0重量部
(SiCに対して2質量%)とした以外は実施例と同様
の方法により複合材料の作製を行った。この材料の組成
をX線回折で調べたところ、Al4C3が認められた。得
られた複合材料から実施例と同様にして機械加工を行っ
たところ、エッジに欠けが生じた。[Comparative Example] A composite material was prepared in the same manner as in Example except that the amount of C powder added was 2.0 parts by weight (2% by mass relative to SiC). When the composition of this material was examined by X-ray diffraction, Al 4 C 3 was found. When the obtained composite material was machined in the same manner as in Example, a chip was formed on the edge.
【0015】[0015]
【発明の効果】以上説明したように、本発明によれば、
脆い炭化物を生成することなくSiCとSiの複合材料
の脆さを改善でき、微細加工が必要な精密部品の作製が
容易になる効果を有する。As described above, according to the present invention,
The brittleness of the composite material of SiC and Si can be improved without generating brittle carbides, and it has the effect of facilitating the production of precision parts that require fine processing.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 武井 義文 千葉県佐倉市大作2−4−2 太平洋セメ ント株式会社中央研究所内 (72)発明者 塩貝 達也 千葉県佐倉市大作2−4−2 太平洋セメ ント株式会社中央研究所内 (72)発明者 林 睦夫 宮城県仙台市泉区明通3−7 セランクス 株式会社仙台工場内 Fターム(参考) 4K020 AA08 AC07 BC02 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Yoshifumi Takei 2-4-2 Daisaku Sakura City, Chiba Prefecture Pacific Semé Central Research Institute (72) Inventor Tatsuya Shiogai 2-4-2 Daisaku Sakura City, Chiba Prefecture Pacific Semé Central Research Institute (72) Inventor Mutsuo Hayashi 3-7 Makudori, Izumi-ku, Sendai City, Miyagi Prefecture Sendai Factory Co., Ltd. F-term (reference) 4K020 AA08 AC07 BC02
Claims (2)
SiとAl、Mg、Ni、Ti、Zr、Fe、Crおよ
びSnから構成される群から選ばれた少なくとも一種の
金属からなるSi合金を浸透させるSi合金基複合材料
の製造方法において、前記成形体中のC量がSiCに対
して1質量%未満であることを特徴とするSi合金基複
合材料の製造方法。1. A molded body molded using SiC and C,
In the method for producing a Si alloy-based composite material, wherein Si and a Si alloy composed of at least one metal selected from the group consisting of Al, Mg, Ni, Ti, Zr, Fe, Cr and Sn are infiltrated, the molded body A method for producing a Si alloy-based composite material, wherein the amount of C therein is less than 1 mass% with respect to SiC.
置し、真空度5Torr以下で、かつ温度600〜2000
℃で加熱することを特徴とする請求項1記載のSi合金
基複合材料の製造方法。2. The above-mentioned molded body and a Si alloy are placed in a furnace, the degree of vacuum is 5 Torr or less, and the temperature is 600 to 2000.
The method for producing a Si alloy-based composite material according to claim 1, wherein heating is performed at ℃.
Priority Applications (1)
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JP2002075580A JP3999988B2 (en) | 2002-03-19 | 2002-03-19 | Method for producing Si alloy matrix composite material |
Applications Claiming Priority (1)
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---|---|---|---|
JP2002075580A JP3999988B2 (en) | 2002-03-19 | 2002-03-19 | Method for producing Si alloy matrix composite material |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003277171A true JP2003277171A (en) | 2003-10-02 |
JP3999988B2 JP3999988B2 (en) | 2007-10-31 |
Family
ID=29227720
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JP2002075580A Expired - Fee Related JP3999988B2 (en) | 2002-03-19 | 2002-03-19 | Method for producing Si alloy matrix composite material |
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JP (1) | JP3999988B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005179076A (en) * | 2003-12-16 | 2005-07-07 | Mitsui & Co Ltd | Method of manufacturing combined body of silicon carbide and aluminum silicide |
CN111807822A (en) * | 2020-07-21 | 2020-10-23 | 河南熔金高温材料股份有限公司 | Aluminum-zirconium-carbon sliding plate added with aluminum-silicon alloy and fired at low temperature and production method thereof |
-
2002
- 2002-03-19 JP JP2002075580A patent/JP3999988B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005179076A (en) * | 2003-12-16 | 2005-07-07 | Mitsui & Co Ltd | Method of manufacturing combined body of silicon carbide and aluminum silicide |
CN111807822A (en) * | 2020-07-21 | 2020-10-23 | 河南熔金高温材料股份有限公司 | Aluminum-zirconium-carbon sliding plate added with aluminum-silicon alloy and fired at low temperature and production method thereof |
CN111807822B (en) * | 2020-07-21 | 2023-03-31 | 河南熔金高温材料股份有限公司 | Aluminum-zirconium-carbon sliding plate added with aluminum-silicon alloy and fired at low temperature and production method thereof |
Also Published As
Publication number | Publication date |
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JP3999988B2 (en) | 2007-10-31 |
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