JP2003268597A - Plating film manufacturing apparatus and manufacturing method - Google Patents

Abstract

(57) [Problem] To provide a plating capable of preventing dissolution of a seed layer and forming a plating film having a uniform thickness when power is not supplied between an anode and a cathode, for example, when supplying and draining a plating solution. Provision of film production equipment and method. SOLUTION: The anode has an anode, a cathode, an auxiliary anode, an auxiliary cathode, and a plating tank containing a plating solution, at least a part of the cathode is immersed in the plating solution, and power is supplied between the anode and the cathode. A plating film manufacturing apparatus having a power supply unit for supplying power between the auxiliary anode and the cathode and between the auxiliary anode and the auxiliary cathode when not. Manufacture of a plating film in which power is supplied between the auxiliary anode and the cathode and between the auxiliary anode and the auxiliary cathode while power is not supplied between the anode and the cathode in a state where at least a part of the cathode is immersed in the plating solution. Method.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention is particularly suitable for various electronic components such as electronic component substrates, IC wafers, and magnetic head wafers, semiconductor devices, and the like, and provides a high-quality plated film without uneven thickness. The present invention relates to an efficient manufacturing apparatus and manufacturing method.

[0002]

2. Description of the Related Art In recent years, as a film forming method in a semiconductor damascene process, a magnetic head manufacturing process, etc., there is an advantage in that it can be manufactured inexpensively with simple equipment as compared with a sputtering method or a CVD method. The plating method has become the mainstream. However, in the case of the electroplating method, there is a problem that equipment management and condition setting for achieving uniform film thickness and composition must rely on so-called know-how and operation skill.

In the conventional electrolytic plating method, as shown in FIG. 4, a metal layer called a seed layer is provided on a cathode placed in a plating solution, a resist pattern is formed on the seed layer, and then the seed layer is formed. A plating film was formed on the exposed portion of the seed layer where the resist pattern is not formed by applying a voltage from a DC power supply to the cathode and the anode and energizing the electrodes.

However, the conventional electrolytic plating method has the following problems. That is, as shown in (1) on the left side of FIG. 5, when the plating solution is supplied or drained,
When power is not supplied between the anode and the cathode,
When the contact of the plating feed point comes into contact with the plating solution when the seed layer is electrically less base than the contact material of the plating feed point, a local battery is formed between the seed layer and the contact, and the seed layer is formed. The problem is that the layers dissolve. Further, as shown in the right diagram (2) of FIG. 5, when the adhesion between the resist pattern and the plating film is not sufficient and the seed layer is electrically baser than the plating film, the plating film and This is a problem that a local battery is formed between the seed layers and the seed layer is dissolved. If the seed layer is dissolved, not only the accuracy of the plating process is deteriorated, but also corrosion, deterioration of magnetic head characteristics and the like are serious problems.

In order to solve such a problem, Japanese Unexamined Patent Publication No.
In JP-A 0-330987, as shown in the lower diagrams of FIG. 6 and FIG. 7, an auxiliary anode is further installed in the plating tank in addition to the above-mentioned anode, and when the plating solution is supplied or drained,
When power is not supplied between the anode and the cathode,
It is disclosed to prevent dissolution of the seed layer by applying a potential between the auxiliary anode and the cathode. However, if only one auxiliary anode is installed, as shown in the upper and middle diagrams of FIG. 7 and the left diagram (1) of FIG. 9, when the plating bath is viewed from above, the wafer-shaped cathode is formed on the cathode. There is a problem that a thick film portion and a thin film portion are formed in the plated film formed in the above step, and a plated film having a uniform film thickness cannot be obtained.

Therefore, as shown in the lower diagram of FIG. 8, it is considered to solve the problem in the case where one auxiliary anode is installed by installing a plurality of the auxiliary anodes. However, also in this case, as shown in the upper and middle diagrams of FIG. 8 and the right diagram (2) of FIG. 9, for example, when four auxiliary anodes are used, they are formed on the wafer-shaped cathode. The thickness of the plating film is thicker at the outer periphery and thinner at the center,
There is still a problem that a plating film having a uniform film thickness cannot be obtained.

Also, as shown in the lower diagram of FIG. 10, by installing a ring-shaped auxiliary anode so as to surround the outer periphery of the wafer-shaped cathode, the problem in the case where one auxiliary anode is installed can be solved. It is considered. However, also in this case, as shown in the upper and middle diagrams of FIG. 10, as in the case of using four auxiliary anodes, the thickness of the plating film becomes thicker in the outer peripheral portion and thinner in the central portion, and the thickness is still uniform. However, there is a problem that the plating film of 1 cannot be obtained.

As described above, in the case of the conventional electrolytic plating method, there is a large variation in the film thickness distribution of the plating film, and not only the film thickness but also the composition varies depending on the part, and the magnetic characteristics and the like deteriorate. There was a problem such as being lost. If the thickness distribution of the plating film has a large variation, the load in the chemical mechanical polishing (CMP) process, which is a post-process, becomes large, resulting in an increase in cost and a decrease in yield. there were.

[0009]

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems in the prior art and achieve the following objects. That is, the present invention, when not supplying power between the anode and the cathode, such as when supplying or draining the plating solution,
An object of the present invention is to provide a plating film manufacturing apparatus capable of preventing the seed layer from dissolving and forming a plating film having a uniform film thickness, and an efficient manufacturing method of the plating film.

[0010]

Means for Solving the Problems In order to solve the above-mentioned problems, the inventors of the present invention have made extensive studies, and as a result, have obtained the following findings. That is, the variation in the film thickness distribution of the plating film is large because the outer peripheral portion of the wafer-shaped cathode is close to the auxiliary anode, and the lines of electric force in the plating tank are concentrated on the outer peripheral portion of the wafer-shaped cathode. In order to improve the variation in the film thickness distribution of the plating film, it is not enough to simply increase the number of auxiliary anodes, and it is important to suppress the variation in the film thickness of the wafer-shaped cathode. It is a finding that there is.

The present invention is based on the above findings by the present inventors, and means for solving the above problems are as follows. <1> An anode, a cathode, an auxiliary anode, an auxiliary cathode, and a plating bath containing a plating solution, and at least a part of the cathode is immersed in the plating solution. An apparatus for producing a plated film, comprising a power supply means for supplying power between the auxiliary anode and the cathode and between the auxiliary anode and the auxiliary cathode when power is not supplied between the cathodes. . When power is supplied between the anode and the cathode, a plating film is formed on the seed layer. In <1>, since the auxiliary cathode is installed between the outer peripheral portion of the cathode and the auxiliary anode, the auxiliary cathode is closer to the auxiliary anode than the cathode. Therefore, when power is not supplied between the anode and the cathode and the power supply unit supplies power between the auxiliary anode and the cathode, elution of the seed layer is prevented. Furthermore, when the power feeding means feeds power between the auxiliary anode and the auxiliary cathode, it is possible to effectively suppress the concentration of electric lines of force in the plating tank on the outer peripheral portion of the cathode. As a result, the plating film formed on the cathode is controlled to have a uniform film thickness as a whole without composition unevenness. <2> Manufacturing of the plating film according to <1>, wherein the power supply means has a first power supply means for supplying power between the auxiliary anode and the cathode, and a second power supply means for supplying power between the auxiliary anode and the cathode. It is a device. <3> The first power feeding means includes a power supply for applying a voltage to the auxiliary anode and the cathode, and a wiring capable of conducting a current from the power supply to the auxiliary anode and the cathode,
The second power feeding means includes a power source for applying a voltage to the auxiliary anode and the auxiliary cathode, and a wiring capable of conducting a current from the power source to the auxiliary anode and the auxiliary cathode, <1> or <2> An apparatus for producing a plating film according to 1.
In the above item <2> or <3>, since power is supplied between the auxiliary anode and the cathode and between the auxiliary anode and the auxiliary cathode by separate power supply means, it is possible to save energy without supplying more power than necessary. <4> The auxiliary anode is the apparatus for producing a plated film according to any one of <1> to <3>, which is arranged on the outer periphery of the auxiliary cathode. In the item <4>, since the auxiliary cathode is closer to the auxiliary anode than the cathode, the power feeding means, when power is not fed between the anode and the cathode, When electric power is supplied between the auxiliary anode and the auxiliary cathode, concentration of electric lines of force in the plating tank on the outer peripheral portion of the cathode is effectively suppressed. As a result, the plating film formed on the cathode is controlled to have a uniform film thickness as a whole without composition unevenness. <5> Using an anode, a cathode, an auxiliary anode, an auxiliary cathode, and a plating bath containing a plating solution,
Between the auxiliary anode and the cathode, and between the auxiliary anode and the auxiliary cathode while power is not supplied between the anode and the cathode in a state where at least a part of the cathode is immersed in the plating solution. The method for producing a plated film is characterized in that power is supplied to the substrate. When power is supplied between the anode and the cathode, a plating film is formed on the seed layer. <5>
In the above, in the case where the power is not supplied between the anode and the cathode, when the power supply unit supplies the power between the auxiliary anode and the cathode, elution of the seed layer is prevented. Furthermore, when the power feeding means feeds power between the auxiliary anode and the auxiliary cathode, it is possible to effectively suppress the concentration of electric lines of force in the plating tank on the outer peripheral portion of the cathode. As a result, the plating film formed on the cathode is controlled to have a uniform film thickness as a whole without composition unevenness.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION The plating film manufacturing apparatus of the present invention comprises:
It comprises an anode, a cathode, an auxiliary anode, an auxiliary cathode, a plating tank containing a plating solution, and a power supply means, and further has other means appropriately selected as necessary. The method for producing a plated film of the present invention comprises an anode, a cathode, an auxiliary anode, an auxiliary cathode,
A plating bath containing a plating solution is used, and at least a part of the cathode is immersed in the plating solution, while the power is not supplied between the anode and the cathode. , And supplying power between the auxiliary anode and the auxiliary cathode, which can be preferably carried out by implementing the plating film manufacturing apparatus of the present invention,
The contents will be clarified through the description of the plating film manufacturing apparatus of the present invention. Further, the plated film of the present invention can be suitably manufactured by the above-described apparatus for manufacturing a plated film of the present invention or the method of manufacturing a plated film of the present invention, and the contents will be clarified through these descriptions.

As the anode, its shape, structure,
The size, material, etc. are not particularly limited, and can be appropriately selected from those used in known electrolytic plating apparatuses according to the purpose. In addition, as a material of the anode, for example, Ni is preferably cited.

As the cathode, its shape, structure,
The size, material, etc. are not particularly limited, and can be appropriately selected from those used in known electrolytic plating apparatuses according to the purpose. The material of the cathode is preferably Cu, for example, and the shape of the cathode is preferably a wafer.

As the plating tank, its shape, structure,
The size, material, etc. are not particularly limited, and can be appropriately selected from those used in known electrolytic plating apparatuses according to the purpose.

The composition of the plating solution is not particularly limited and may be appropriately selected from the compositions of known electrolytic plating solutions according to the purpose.
In the case of producing an Fe alloy film, a NiFe bath containing nickel sulfate, ferrous sulfate, ammonium chloride, boric acid, sodium saccharin and sodium lauryl sulfate, or nickel sulfate, ferrous sulfate, nickel chloride, boric acid, sodium saccharin and lauryl NiFe bath with sodium sulfate, and the like, for example, when producing a film containing Fe such as CoFe, CoNiFe as a plating film, nickel sulfate, cuprous sulfate, cobalt sulfate, ammonium chloride, boric acid, sodium saccharin, Examples include a metal plating bath using sodium lauryl sulfate.

The shape, structure, size, material, etc. of the auxiliary anode are not particularly limited, and can be appropriately selected from those used in known electrolytic plating apparatuses according to the purpose. . A preferable shape of the auxiliary anode is a rod shape, and examples of the material of the auxiliary anode include Pt and N.
Suitable examples include i and Ti. The number of the auxiliary anodes is not particularly limited, but is preferably 1 or more and 2
The above is more preferable, and 4 or more is particularly preferable. When the number of the auxiliary anodes is 3 or more, it is preferable that the auxiliary anodes are arranged at substantially equal intervals (substantially equal distance) from each other in terms of uniform current density in the plating tank. Are arranged at substantially equal distances from the cathode,
It is particularly preferable in that the lines of electric force in the plating tank can be effectively suppressed from concentrating on the outer peripheral portion of the cathode, and a plated film having a uniform film thickness can be efficiently produced on the cathode. The auxiliary anode is preferably installed at the outer peripheral edge of the plating bath (near the wall of the plating bath) or the like. In this case, it is advantageous in that a plated film having a uniform film thickness can be efficiently manufactured on the cathode.

The structure, size, material, etc. of the auxiliary cathode are not particularly limited, and can be appropriately selected from those used in known electrolytic plating apparatuses according to the purpose. The auxiliary cathode preferably has a ring shape or the like. When the auxiliary cathode has a ring shape, it is possible to effectively suppress electric lines of force in the plating tank from concentrating on the outer peripheral portion of the cathode, and to plate the cathode with a uniform film thickness. This is advantageous in that the membrane can be manufactured efficiently. Further, as a material of the auxiliary cathode, for example, Ti is preferably cited. When the auxiliary cathode has a ring shape, it is preferable that the auxiliary cathode is installed outside the cathode so that an inner peripheral portion thereof faces an outer peripheral portion of the cathode.

The power feeding means is not particularly limited as long as at least power can be fed between the anode and the cathode, and can be appropriately selected according to the purpose. In the present invention, at least the cathode is used. Power is supplied between the auxiliary anode and the cathode, and between the auxiliary anode and the auxiliary cathode when a part is immersed in the plating solution and power is not supplied between the anode and the cathode. Is required to be able to.

Examples of the power supply means include those having a power supply for supplying power and wiring, and the first power supply means for supplying power between the auxiliary anode and the cathode and between the auxiliary anode and the auxiliary cathode. A mode having a second power feeding means for feeding power to A DC power source is preferably used as the power source in the power feeding means.
It should be noted that, for example, when power is separately supplied between the anode and the cathode, between the auxiliary anode and the cathode, and between the auxiliary anode and the auxiliary cathode from the viewpoint of energy saving, a plurality of power supplies are independently provided. It is preferable to provide the power supply between the auxiliary anode and the cathode and between the auxiliary anode and the auxiliary cathode separately, so that the power supply amount can be easily controlled individually to the optimum value. Is more preferable.

The power supply current between the anode and the cathode by the power supply means is not particularly limited, and known conditions can be adopted and can be appropriately selected according to the purpose. The power supply current between the auxiliary anode and the cathode by the power supply means is not particularly limited and can be appropriately selected according to the purpose, but is preferably about 0.01 to ^{2 A} / dm ² . The power supply current between the auxiliary anode and the auxiliary cathode by the power supply means is not particularly limited and can be appropriately selected according to the purpose, but is, for example, 0.01 to 4 A / d.
It is preferably about m ² .

Here, an example of a plating film manufacturing apparatus and a plating film manufacturing method of the present invention will be described with reference to the drawings. It should be noted that manufacturing the plating film using the plating film manufacturing apparatus of the present invention is the implementation of the plating film manufacturing method of the present invention, and the plating film manufactured here is the plating film of the present invention. Also, the plating conditions here are:
There is no particular limitation and it can be appropriately selected according to the purpose.

As shown in FIG. 1, a plating film manufacturing apparatus 1
00 has a plating tank 10 for containing a plating solution, an anode 20, a cathode 30, an auxiliary anode 40, and an auxiliary cathode 50.

During plating, the anode 20 is immersed in the plating solution at a certain distance from above the plating tank 10 so as to face the bottom surface of the plating tank 10.

The cathode 30 is in the form of a wafer, and is disposed on the bottom surface of the plating tank 10 so as to be immersed in the plating solution. A seed layer is formed on the cathode 30, a resist pattern is formed on the seed layer, and the seed layer is the resist. The area where no pattern is formed is exposed in the plating solution.

One auxiliary anode 40 is arranged at the outer peripheral edge of the plating tank 10 (on the side of the wall of the plating tank 10) with at least its tip portion immersed in the plating solution.
The auxiliary cathode 50 has a ring shape, and the inner peripheral surface of the auxiliary cathode 50 faces the outer peripheral surface of the cathode 30.
It is arranged so as to surround the outside of 0.

Between the anode 20 and the cathode 30, between the auxiliary anode 40 and the cathode 30, and the auxiliary anode 4
0 and the auxiliary cathode 50 are electrically connected to each other by a power feeding means.

The power supply means can independently supply current between the anode 20 and the cathode 30, between the auxiliary anode 40 and the cathode 30, and between the auxiliary anode 40 and the auxiliary cathode 50. It has three independent power supplies and wiring for Note that FIG. 2 left view (a) illustrates a preferable mode as the power supply means, omitting a power supply and wiring for supplying power between the anode 20 and the cathode 30,
A first power supply means having a power supply for applying a voltage to the auxiliary anode 40 and the cathode 30, and a wiring capable of conducting a current from the power supply to the auxiliary anode 40 and the cathode 30, a supplementary anode 40 and an auxiliary cathode 50. 2 shows a second power supply means having a power supply for applying a voltage to the second power supply and a wiring capable of conducting a current from the power supply to the auxiliary anode 40 and the auxiliary cathode 50. The power feeding means,
When power is not supplied between the anode 20 and the cathode 30, that is, when the plating solution is supplied or drained, the space between the auxiliary anode 40 and the cathode 30 and the auxiliary anode 40
Power can be supplied between the auxiliary cathode 50 and the auxiliary cathode 50.

In the plating film manufacturing apparatus 100, when power is supplied between the anode 20 and the cathode 30 by the power supply means, a plating film is formed on the seed layer.
By using the seed layer as an object to be plated, a plating film is formed on the object to be plated. It should be noted that while power is being supplied between the anode 20 and the cathode 30, that is, while the plating film is being manufactured, in order to keep the composition of the plating solution uniform, the injection and discharge of the plating solution should be continued. preferable.

In the plating film manufacturing apparatus 100, when power is not supplied between the anode 20 and the cathode 30,
For example, after the plating solution is produced and the plating solution is discharged to take out the cathode 30 from the plating tank 100, that is, until the discharge of the plating solution is completed after the power supply between the anode 20 and the cathode 30 is cut off, or When power is supplied between the auxiliary anode 40 and the cathode 30 by the power supply means at the time of supplying the plating solution, elution of the seed layer is prevented, and the cathode 30 caused by the distance between the anode 20 and the cathode 30 is prevented. The non-uniformity of the above current density is suppressed. Further, when power is supplied between the auxiliary anode 40 and the auxiliary cathode 50 by the power supply means, the plating tank 100
The electric lines of force inside are effectively suppressed from concentrating on the outer peripheral portion of the cathode 30, and the electric resistance value in the seed layer becomes uniform. As a result, the plating film formed on the cathode 30 is controlled to have a uniform film thickness as a whole, without unevenness in composition, thickening in the outer peripheral portion and thinning in the central portion.

The uniformity of the film thickness of the plated film produced can be evaluated by the in-plane film thickness distribution of the plated film and the film thickness histogram (film thickness (Å) -frequency).
As the thickness unevenness of the plating film, the thickness unevenness (%) represented by the following formula: (maximum value-minimum value) / average value is 250.
% Or less, more preferably 200% or less, and the thickness unevenness represented by the following formula, 3σ / average value, is preferably 1.7 or less, and 1.5 or less. Is more preferable.

Since the plating film has a uniform film thickness,
The load in the subsequent process, for example, the chemical mechanical polishing (CMP) process is reduced, the yield in the plating process is improved, and the cost is significantly reduced. Therefore, the plated film is particularly suitable for products such as magnetic heads that require a plated film of uniform thickness.

The plating film can be suitably formed or manufactured on the surface of the object to be plated, but the object to be plated is not particularly limited and can be appropriately selected according to the purpose. , A magnetic head or a member for a magnetic head, and the like.

The shape of the plating film is not particularly limited and may be appropriately selected depending on the intended purpose. To obtain the desired shape of the plating film, the seed layer or the object to be plated may be formed. A resist pattern having a desired shape may be formed in advance. In this case, the plating film is not formed on the part or region where the resist pattern is formed. The resist pattern can be formed according to a known resist pattern forming method. The resist pattern can be removed by dissolution with a chemical or the like. In the present invention, after the resist pattern is removed by dissolution, the exposed seed layer is subjected to chemical etching, ion milling or the like as necessary. As a result, a desired plating film pattern can be manufactured.

[0035]

EXAMPLES Examples of the present invention will be described below.
The invention is in no way limited to these examples.

Example 1 The plating film manufacturing apparatus 100 shown in FIG. 1 was used. A plating film manufacturing apparatus 100 includes a plating tank 10, an anode 20 (made of Ni), a substrate-shaped cathode 30 (made of Si), and a rod-shaped auxiliary anode 40 (Ni).
Four) and a ring-shaped auxiliary cathode 50 (made of Ti). The auxiliary anodes 40 are installed at four corners near the wall side of the plating tank 10 at substantially equal intervals from each other and at substantially equal distances from the auxiliary cathode 50.
The auxiliary cathode 50 is installed outside the cathode 30 so that the inner peripheral surface thereof faces the outer peripheral surface of the cathode 30. Then, the FeN / Ti film as the seed layer was entirely covered on the cathode 30, and a resist pattern was further formed on the surface thereof.

The plating bath 10 was filled with a permalloy plating solution, and electric power was supplied between the anode 20 and the cathode 30 which were arranged to face each other in the permalloy plating solution to start the production of a permalloy plating film. And the anode 2
When power was not supplied between 0 and the cathode 30, power was supplied between the auxiliary anode 40 and the cathode 30, and between the auxiliary anode 40 and the auxiliary cathode 50.

The thickness of the obtained plating film is measured by a known film thickness measuring method, and the upper and middle diagrams of FIG. 3 show the in-plane thickness distribution of the plating film and a histogram of the film thickness. It was Further, the value of (maximum value-minimum value) / average value of the plating film and 3 [sigma] / average value were calculated, and the results are shown in Table 1. From the results of FIG. 3 and Table 1, it is apparent that the thickness distribution of the plating film obtained in Example 1 is substantially uniform in the plane of the plating film.

(Comparative Example 1) In Example 1, the plating film manufacturing apparatus 100 was replaced with the apparatus shown in FIG. 6, and the number of auxiliary anodes 40 was set to 1, and the plating tank 10 was installed at one corner near the wall side. The plating was performed in the same manner as in Example 1 except that the auxiliary cathode 50 was not used, and that the power was supplied only between the auxiliary anode 40 and the cathode 30 when the power was not supplied between the anode 20 and the cathode 30. The membrane was manufactured. The thickness of the obtained plating film was determined as in Example 1.
The results measured in the same manner as above are shown in FIG. From the results of the upper and middle diagrams of FIG. 7 and Table 1, Comparative Example 1
It can be seen that the thickness distribution of the plating film obtained in (1) is non-uniform, decreasing from the side closer to the auxiliary anode 40 to the side further away.

Comparative Example 2 In Example 1, the auxiliary cathode 50 was not used, and the anode 20 and the cathode 3 were used.
A plating film was manufactured in the same manner as in Example 1 except that power was supplied only between the auxiliary anode 40 and the cathode 30 when no power was supplied between 0s. The thickness of the obtained plating film was measured in the same manner as in Example 1, and the results are shown in the upper and middle diagrams of FIG. 8 and Table 1. Figure 8 top
From the results of the middle diagram and Table 1, it is understood that the film thickness distribution of the plating film obtained in Comparative Example 1 is non-uniform, decreasing from the side closer to the auxiliary anode 40 to the side further away.

Comparative Example 3 In Example 1, the auxiliary cathode 50 was not used, the auxiliary anode 40 was replaced with a ring-shaped auxiliary anode, and the anode 20 and the cathode 30 were used.
Except that power was supplied only between the auxiliary anode 40 and the cathode 30 when power was not supplied between them,
A plated film was manufactured in the same manner as in Example 1. The thickness of the obtained plating film was measured in the same manner as in Example 1, and the results are shown in the upper and middle diagrams of FIG. 10 and Table 1. Top view of Figure 10
From the results in the middle diagram and Table 1, it is clear that the thickness distribution of the plating film obtained in Comparative Example 1 is non-uniform with the thickness decreasing from the outer peripheral portion to the central portion of the plating film. .

[0042]

[Table 1]

The preferred embodiments of the present invention will be additionally described below. (Supplementary Note 1) An anode, a cathode, an auxiliary anode, an auxiliary cathode, and a plating bath containing a plating solution, wherein at least a part of the cathode is immersed in the plating solution, and the anode is An apparatus for manufacturing a plating film, further comprising a power supply means for supplying power between the auxiliary anode and the cathode and between the auxiliary anode and the auxiliary cathode when power is not supplied between the cathode and the cathode. (Supplementary Note 2) The apparatus for producing a plating film according to Supplementary Note 1, wherein the power supply unit includes a first power supply unit that supplies power between the auxiliary anode and the cathode, and a second power supply unit that supplies power between the auxiliary anode and the auxiliary cathode. . (Supplementary Note 3) The first power feeding means includes a power source for applying a voltage to the auxiliary anode and the cathode, and a wiring capable of conducting a current from the power source to the auxiliary anode and the cathode. An apparatus for producing a plating film according to appendix 1 or 2, further comprising a power supply for applying a voltage to the auxiliary anode and the auxiliary cathode, and a wiring capable of conducting a current from the power supply to the auxiliary anode and the auxiliary cathode. . (Supplementary Note 4) The plating film manufacturing apparatus according to any one of Supplementary Notes 1 to 3, wherein the auxiliary anode has a rod shape and the auxiliary cathode has a ring shape. (Supplementary Note 5) The plating film manufacturing apparatus according to Supplementary Note 4, wherein the auxiliary cathode is arranged such that the inner peripheral surface thereof faces the outer peripheral surface of the cathode. (Supplementary Note 6) The plating film manufacturing apparatus according to any one of Supplementary Notes 1 to 5, wherein the auxiliary anode is arranged outside the auxiliary cathode. (Supplementary Note 7) The plating film manufacturing apparatus according to any one of Supplementary Notes 1 to 6, wherein two or more auxiliary anodes are arranged. (Supplementary Note 8) The apparatus for producing a plating film according to Supplementary Note 7, wherein the auxiliary anodes are arranged at substantially equal intervals and at positions substantially equidistant from the auxiliary cathode. (Additional remark 9) An anode, a cathode, an auxiliary anode, an auxiliary cathode, and a plating bath containing a plating solution are used, and at least a part of the cathode is immersed in the plating solution. A method of manufacturing a plating film, wherein power is supplied between the auxiliary anode and the cathode and between the auxiliary anode and the auxiliary cathode while power is not supplied between the cathodes.

[0044]

According to the present invention, it is possible to solve the above-mentioned problems in the prior art, and to dissolve the seed layer when power is not supplied between the anode and the cathode when the plating solution is supplied or drained. It is possible to provide a plating film manufacturing apparatus capable of preventing and forming a plating film having a uniform film thickness, and an efficient manufacturing method of the plating film.

[Brief description of drawings]

FIG. 1 is a schematic explanatory view showing an example of a plating film manufacturing apparatus of the present invention.

FIG. 2 is a schematic plan view and a feeder circuit diagram of the plating film manufacturing apparatus of the present invention shown in FIG.

FIG. 3 is a diagram showing a film thickness distribution of a plating film formed by a plating film manufacturing apparatus of the present invention (Example 1) and a histogram of the film thickness distribution.

FIG. 4 is a schematic explanatory view showing an example of a conventional plating film manufacturing apparatus.

FIG. 5 is a schematic view for explaining a problem in the conventional electrolytic plating method.

FIG. 6 is a schematic explanatory view showing an example of a conventional plating film manufacturing apparatus (using one auxiliary anode).

FIG. 7 is a diagram showing a film thickness distribution of a plating film formed by a conventional plating film manufacturing apparatus (using one auxiliary anode) and a histogram of the film thickness distribution.

FIG. 8 is a diagram showing a film thickness distribution of a plating film formed by a conventional plating film manufacturing apparatus (using four auxiliary anodes) and a histogram of the film thickness distribution.

FIG. 9 is a diagram showing a film thickness distribution of a plating film formed by a conventional plating film manufacturing apparatus (when one auxiliary anode is used and when four auxiliary anodes are used) and a histogram of the film thickness distribution. is there.

FIG. 10 is a diagram showing a film thickness distribution of a plating film formed by a conventional plating film manufacturing apparatus (using a ring-shaped auxiliary cathode) and a histogram of the film thickness distribution.

[Explanation of symbols]

10 plating tank 20 anode 30 wafers (cathode) 40 Auxiliary anode 50 auxiliary cathode 60 power supply means 100 Plating film manufacturing equipment

Continued front page    F-term (reference) 4M104 BB04 BB05 BB14 BB36 DD52                       DD75 HH20

Claims (5)

[Claims] 1. An anode, a cathode, an auxiliary anode, an auxiliary cathode, and a plating bath containing a plating solution, wherein at least a part of the cathode is immersed in the plating solution, and An apparatus for producing a plating film, comprising a power supply means for supplying power between the auxiliary anode and the cathode and between the auxiliary anode and the auxiliary cathode when power is not supplied between the anode and the cathode. . 2. The plating film according to claim 1, wherein the power supply means includes first power supply means for supplying power between the auxiliary anode and the cathode, and second power supply means for supplying power between the auxiliary anode and the cathode. Manufacturing equipment. 3. The first power feeding means comprises a power source for applying a voltage to the auxiliary anode and the cathode, and a wiring capable of conducting a current from the power source to the auxiliary anode and the cathode, and the second power feeding means. The plating film according to claim 1 or 2, wherein the means comprises a power source for applying a voltage to the auxiliary anode and the auxiliary cathode, and a wiring capable of conducting a current from the power source to the auxiliary anode and the auxiliary cathode. Manufacturing equipment. 4. The apparatus for producing a plated film according to claim 1, wherein the auxiliary anode is arranged outside the auxiliary cathode. 5. An anode, a cathode, an auxiliary anode, an auxiliary cathode, and a plating bath containing a plating solution, and at least a part of the cathode is immersed in the plating solution. And a method for producing a plated film, wherein power is supplied between the auxiliary anode and the cathode and between the auxiliary anode and the auxiliary cathode while power is not supplied between the cathode and the cathode.