JP2003132822A - Panel display device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a panel display device which enables easy and reliable sealing in vacuum, and to provide a manufacturing method therefor. SOLUTION: A hermetic envelope 10 for keeping vacuum in the panel display device is provided with a front substrate 11 and a rear substrate 12 being disposed oppositely each other, and a seal portion 30 sealing peripheral portions of the front substrate and the rear substrate. The seal portion is composed of a frame-shaped member 18 made of electrically conductive material having a high melting point, the first sealing material 32 and the second sealing material 34. The first sealing material has a lower melting point and a lower softening point than those of the second sealing material, and the material composing the frame-shaped member 18 has a higher melting point and a higher softening temperature than those of the first sealing material and the second sealing material. The frame-shaped member 18 is joined with the front board via the first sealing material and is joined with the rear board via the second sealing material.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat display device having a flat shape, and more particularly to a flat display device using a large number of electron-emitting devices and a manufacturing method thereof.

[0002]

2. Description of the Related Art In recent years, various flat display devices have been developed as next-generation lightweight and thin display devices which will replace cathode ray tubes (hereinafter referred to as CRTs). Such flat display devices include a liquid crystal display (hereinafter, referred to as LCD) that controls the intensity of light by utilizing the alignment of liquid crystals, a plasma display panel (hereinafter, referred to as PDP) that emits a phosphor by ultraviolet rays of plasma discharge. Field emission display (hereinafter referred to as FED) in which a phosphor is caused to emit light by an electron beam of a field emission electron-emitting device.

For example, an FED generally has a front substrate and a rear substrate which are opposed to each other with a predetermined gap,
These substrates form a vacuum envelope by bonding their peripheral portions to each other via a rectangular frame-shaped side wall. A phosphor screen is formed on the inner surface of the front substrate,
A large number of electron-emitting devices are provided on the inner surface of the back substrate as electron-emitting sources for exciting phosphors to emit light.

Further, in order to support the atmospheric pressure load applied to the back substrate and the front substrate, a plurality of supporting members are arranged between these substrates. The potential on the rear substrate side is almost the ground potential, and the anode voltage is applied to the phosphor screen.
Then, the red, green, and blue phosphors forming the phosphor screen are irradiated with electron beams emitted from a large number of electron-emitting devices, and the phosphors emit light to display an image.

In such a display device, the thickness of the display device can be reduced to about several millimeters, and C, which is currently used as a display for televisions and computers, is used.
Compared with RT, it is possible to achieve weight reduction and thickness reduction.

[0006]

In the above FED, it is necessary to make the inside of the envelope vacuum. Further, also in the PDP, it is necessary to evacuate the PDP once and then fill the discharge gas.

As a means for evacuating the envelope, first, the front substrate, the rear substrate, and the side walls, which are the constituent members of the envelope, are heated and joined in the atmosphere with an appropriate sealing material, and then the front face is joined. After exhausting the inside from an exhaust pipe provided on the substrate or the back substrate, there is a method of vacuum-sealing the exhaust pipe. However, in the flat type envelope, the exhaust rate through the exhaust pipe is extremely slow and the attainable vacuum degree is poor, so that there are problems in mass productivity and characteristics.

As a method for solving this problem, for example,
Japanese Unexamined Patent Application Publication No. 2001-229825 discloses a method of performing final assembly of a front substrate and a rear substrate that form an envelope in a vacuum chamber.

Here, first, the front substrate and the rear substrate arranged in the vacuum chamber are sufficiently heated. this is,
This is to reduce gas emission from the inner wall of the envelope, which is the main cause of deterioration of the vacuum degree of the envelope. Then, when the front substrate and the rear substrate are cooled and the degree of vacuum in the vacuum chamber is sufficiently improved, a getter film for improving and maintaining the degree of vacuum of the envelope is formed on the phosphor screen. Then, the front substrate and the back substrate are heated again to a temperature at which the sealing material melts, and cooled until the sealing material is solidified with the front substrate and the back substrate combined in predetermined positions.

The vacuum envelope manufactured by such a method has both a sealing step and a vacuum sealing step, does not require a great amount of time for exhausting the exhaust pipe, and has an extremely good vacuum. You can get a degree.

However, in the above method, the sealing process performed in vacuum includes heating, positioning, and cooling, and the front substrate and the back surface are covered for a long time while the sealing material is melted and solidified. The substrate and must be kept in place. In addition, the front substrate and the rear substrate thermally expand due to heating and cooling during sealing, and the alignment accuracy is likely to deteriorate. Further, there is a problem in productivity and characteristics associated with the sealing such that the getter film is deteriorated by heating during the sealing.

The present invention has been made in view of the above points, and an object thereof is to provide a flat display device capable of easily and reliably sealing in a vacuum atmosphere, and a manufacturing method thereof. It is in.

[0013]

In order to solve the above problems, in a flat panel display device according to an aspect of the present invention, a front substrate and a rear substrate which are arranged to face each other, and a peripheral portion of the front substrate and the rear substrate which are opposite to each other are provided. An envelope having a sealed sealing portion, the sealing portion including a frame-shaped high-melting point conductive member and first and second sealing materials, and the first sealing material. Has a lower melting point or softening point than the second sealing material,
The high-melting-point conductive member has a melting point or softening point higher than that of the first and second sealing materials, and the high-melting-point conductive member is formed of the front substrate and the rear substrate via the first sealing material. It is characterized in that it is adhered to one side and is adhered to the other of the front substrate and the rear substrate through the second sealing material.

Also, the method of manufacturing a flat panel display device according to the aspect of the present invention has a front substrate and a rear substrate which are arranged opposite to each other, and includes a high melting point conductive member and first and second sealing materials. In a method of manufacturing a flat panel display device including an envelope in which the peripheral portions of a front substrate and a rear substrate are sealed to each other by a bonding portion, the flat display device has a melting point or a softening point higher than those of the first and second sealing materials. A frame-shaped high-melting-point conductive member is prepared, and the high-melting-point conductive member is attached to one of the front substrate and the rear substrate by a second sealing material having a melting point or a softening point higher than that of the first sealing material. Glued to the periphery of the board
The one substrate to which the high melting point conductive member is adhered,
By arranging the other substrate to face each other and disposing a first sealing material between the high melting point conductive member and the peripheral portion of the other substrate, and energizing the high melting point conductive member, It is characterized in that the high melting point conductive member and the other substrate are adhered by melting or softening the first sealing material.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments in which a flat panel display device according to the present invention is applied to an FED will be described in detail with reference to the drawings.

As shown in FIGS. 1 to 3, this FED
Includes a front substrate 11 and a rear substrate 12 each made of rectangular glass as an insulating substrate, and these substrates are arranged to face each other with a gap of, for example, about 1.6 mm. The size of the rear substrate 12 is slightly larger than that of the front substrate 11, and a lead line (not shown) for inputting a video signal described later is formed on the outer peripheral portion thereof. Then, the front substrate 11 and the rear substrate 12 are joined together at their peripheral portions via a sealing portion 30 having a substantially rectangular frame shape, and constitute a flat rectangular vacuum envelope 10 whose inside is maintained in a vacuum state. is doing.

The sealing portion 30 has a conductive and rectangular frame-shaped high melting point conductive member 18 and first and second sealing materials 32 and 3.
Includes 4. The high melting point conductive member 18 is adhered to the peripheral portion of the front substrate 11 via the first sealing material 32, and is adhered to the peripheral portion of the rear substrate 12 via the second sealing material 34. There is.

The high melting point conductive member 18 includes the first and second high melting point conductive members.
It has a higher melting point or softening point (that is, a temperature suitable for sealing) than the sealing materials 32 and 34, and, for example, an iron-nickel alloy is used. In addition, a material containing at least any one of Fe, Cr, Ni, and Al is used as the conductive high-melting point conductive member. As the first sealing material 32, a material having a lower melting point or softening point than the second sealing material is used. Here, for example, indium or an indium alloy is used as the first sealing material, and frit glass having an insulating property is used as the second sealing material.

For example, the melting point or softening point of the high melting point conductive member 18 is 500 ° C. or more, the melting point or softening point of the second sealing material is 300 ° C. or more, and the melting point or softening point of the first sealing material is less than 300 ° C. Is set to.

As shown in FIGS. 2 and 3, a plurality of plate-shaped support members 1 are provided inside the vacuum envelope 10 for supporting an atmospheric pressure load applied to the front substrate 11 and the rear substrate 12.
4 are provided. These support members 14 are arranged in a direction parallel to the short side of the vacuum envelope 10, and are arranged at predetermined intervals along the direction parallel to the long side. The shape of the support member 14 is not limited to the plate shape, and a columnar support member or the like may be used, for example.

The phosphor screen 16 shown in FIGS. 3 and 4 is formed on the inner surface of the front substrate 11. This phosphor screen 16 is configured by arranging red, green, and blue stripe-shaped phosphor layers, and a stripe-shaped black light absorption layer 20 as a non-light emitting portion located between these phosphor layers. The phosphor layer extends in a direction parallel to the short side of the vacuum envelope and is arranged at a predetermined interval along the direction parallel to the long side. A metal back layer 17 made of, for example, an aluminum layer is vapor-deposited on the phosphor screen 16.

Further, as shown in FIG. 3, on the inner surface of the rear substrate 12, a large number of electron-emitting devices 22 each emitting an electron beam as electron-emitting sources for exciting the phosphor layer of the phosphor screen 16 are provided. It is provided. These electron-emitting devices 22 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. More specifically, a conductive cathode layer 24 is formed on the inner surface of the back substrate 12, and a silicon dioxide film 26 having a large number of cavities 25 is formed on the conductive cathode layer. A gate electrode 28 made of molybdenum, niobium, or the like is formed on the silicon dioxide film 26. A cone-shaped electron-emitting device 22 made of molybdenum or the like is provided in each cavity 25 on the inner surface of the back substrate 12.

In the FED constructed as described above,
The video signal is input to the electron-emitting device 22 and the gate electrode 28 formed in a simple matrix method. When the electron-emitting device 22 is used as a reference, when the brightness is highest, +
A gate voltage of 100V is applied. Further, +10 kV is applied to the phosphor screen 16. This allows
An electron beam is emitted from the electron emitting element 22. The magnitude of the electron beam emitted from the electron-emitting device 22 is modulated by the voltage of the gate electrode 28, and the electron beam excites the phosphor layer of the phosphor screen 16 to emit light, thereby displaying an image. .

Next, a method of manufacturing the FED configured as above will be described in detail. First, the electron-emitting device 22 and various wirings are formed on the plate glass for the back substrate. Then, in the air, the plate-shaped support member 14 is sealed on the rear substrate 12 as frit glass as low-melting glass. At the same time, the high melting point conductive member 18 is adhered to the peripheral portion of the back substrate 12 by using frit glass having an insulating property as the second sealing material 34. At this time, the high melting point conductive member 18 is heated to the melting point or the softening point of the second sealing material 34, but since the melting point and the softening point are higher than those of the second sealing material, the shape is not deformed. The back substrate 1
The second sealing material 34 is preferably formed to a thickness of 100 μm or more in order to ensure the insulation between the wiring formed on the upper surface 2 and the high melting point conductive member 18. Normally, this heating is performed by warming the entire back substrate 12 from the surroundings, but the high melting point conductive member 18 may be energized to locally heat only the sealing region.

On the other hand, the phosphor screen 16 is formed on the plate glass which becomes the front substrate 11. For this, a plate glass having the same size as the front substrate 11 is prepared, and a stripe pattern of a phosphor layer is formed on the plate glass by a plotter machine. The plate glass on which the phosphor stripe pattern is formed and the plate glass for the front substrate are placed on a positioning jig and set on an exposure table, so that the phosphor screen 16 is formed by exposure and development. Next, the phosphor screen 16
And a metal back layer 17 made of an aluminum film.
To form.

As the first sealing material 32, the rear substrate 12 having the supporting member 14 and the high-melting-point conductive member 18 sealed as described above, and the front substrate 11 having the phosphor screen 16 formed thereon are sealed. Apply indium. here,
For example, indium is applied to the high melting point conductive member 18 and the inner surface of the peripheral portion of the front substrate 11. After that, in a state where they are opposed to each other with a predetermined gap, the vacuum processing apparatus 1
Put in 00.

As shown in FIG. 5, this vacuum processing apparatus 10
Reference numeral 0 has a load chamber 101, a baking chamber, an electron beam cleaning chamber 102, a cooling chamber 103, a getter film vapor deposition chamber 104, an assembly chamber 105, a cooling chamber 106, and an unload chamber 107, which are sequentially arranged. . Each of these chambers is configured as a processing chamber capable of vacuum processing, and all the chambers are evacuated when manufacturing the FED. The adjacent processing chambers are connected by a gate valve or the like.

The above-mentioned rear substrate 12 and front substrate 11
Is put into the load chamber 101, the inside of the load chamber 101 is made into a vacuum atmosphere, and then sent to the baking and electron beam cleaning chamber 102. In the baking / electron beam cleaning chamber 102, the back substrate 12 and the front substrate 11 are heated to a temperature of 350 ° C. to release the surface adsorption gas of each member.

Simultaneously with heating, an electron beam is applied to the phosphor screen surface of the front substrate 11 and the electron-emitting device surface of the rear substrate 12 from an electron beam generator (not shown) attached to the baking / electron beam cleaning chamber 102. Irradiate. Since this electron beam is deflected and scanned by the deflecting device mounted outside the electron beam generator, the entire surface of the phosphor screen surface and the electron-emitting device surface can be cleaned with the electron beam.

After the heating and the electron beam cleaning, the rear substrate 12 and the front substrate 11 are sent to the cooling chamber 103, for example, about 1
It is cooled to a temperature of 00 ° C. Then, the back substrate 1
2 and the front substrate 11 are a deposition chamber 104 for forming a getter film.
Where a Ba film is vapor-deposited and formed as a getter film on the outside of the phosphor screen.

Subsequently, the back substrate 12 and the front substrate 11
Are sent to the assembly room 105. In this assembly chamber 105, these members are heated to, for example, about 130 ° C., and both substrates are superposed at a predetermined position. Then, the high melting point conductive member 1
The electrode is brought into contact with 8, and a direct current of 300 A is applied for 40 seconds. Then, this current also flows into the first sealing material 32, that is, indium, and the high melting point conductive member 18 and indium generate heat. As a result, indium is
It is melted or softened by being heated to about 200 ° C. At this time, a pressure of about 50 kgf is applied from both sides to the front substrate 11 and the rear substrate 12 which are overlapped.

Since the heating at this time is lower than the melting point or softening point of the second sealing material 34, the high melting point conductive member 1
The second sealing material 34 that adheres 8 is not deformed. Then, when the first sealing material 32 is melted or softened, the energization is stopped, and the heat of the high-melting-point conductive member 18 and indium is quickly transferred to the surrounding front substrate 11 and rear substrate 12 to diffuse indium. Let it solidify. Thereby, the front substrate 11 and the rear substrate 12 are sealed via the high-melting point conductive member 18 and the first and second sealing materials 32 and 34 to form the vacuum envelope 10. About 6 after stopping energization
The vacuum envelope 10 sealed in 0 seconds is carried out of the assembly chamber 105. The vacuum envelope 10 thus formed is cooled to room temperature in the cooling chamber 106 and taken out of the unload chamber 107.

If the cross-sectional area of the high-melting point conductive member 18 is too small, a sufficient heating rate may not be obtained or the high-melting point conductive member itself may be broken. Therefore, it is desirable that the cross-sectional area of the high melting point conductive member is at least 0.1 mm ² . However, if the cross-sectional area is too large, the current required for heating will increase.

Further, it is desirable that the high-melting-point conductive member 18 and the first and second sealing materials 32 and 34 have basically the same coefficient of thermal expansion as the rear substrate and the front substrate. However, since the high melting point conductive member is locally heated to the substrate, it is desirable to select a slightly lower coefficient of thermal expansion in consideration of residual stress. Therefore, the thermal expansion coefficient of the high-melting point conductive member 18 is determined by the front substrate 11 and the rear substrate 1.
It is set to a value lower than the maximum value in the numerical range of ± 20% of each thermal expansion coefficient of No. 2.

(Example 1) F for 36-inch TV
A vacuum envelope 10 applied to an ED display device was formed. Both the front substrate 11 and the rear substrate 12 are made of a glass material having a thickness of 2.8 mm, and the high melting point conductive member 18 also serving as a side wall is made of a Ni-Fe alloy having a width of 2 mm and a height of 1.5 mm. There is. Then, the high-melting-point conductive member 18 is bonded to the rear substrate 12 via the frit glass having a thickness of 0.2 mm which is the second sealing material, and the thickness of 0.3 mm which is the first sealing material.
Is bonded to the front substrate 11 via indium.
The coefficient of linear thermal expansion of the frit glass and the Ni-Fe alloy is 9 with respect to the coefficient of thermal expansion of the substrate glass material.
7% and 95%.

This vacuum envelope was manufactured by the following method.
First, either the back substrate 12 or the high melting point conductive member 18 is filled with frit glass and pre-baked. And
The back substrate 12 and the high-melting-point conductive member 18 are superposed at a predetermined position and heated at 400 ° C. in the air to bond them. At this time, the frit glass layer has a thickness of the rear substrate 12
In order to ensure stable insulation between the upper lead wire and the high melting point conductive member 18, it is set to 0.2 mm.

Next, the front substrate 11 and the high melting point conductive member 1 are formed.
8 and the sealing surface are filled with indium respectively. And
After the back substrate 12 and the front substrate 11 to which the high melting point conductive member 18 is bonded are placed in a vacuum chamber to be heated and degassed,
A getter film is formed on the front substrate 11, and both are superposed at a predetermined position. Then, a direct current of 300 A is applied to the high melting point conductive member 18 and indium for 40 seconds to heat and melt indium at about 160 to 180 ° C.

At this time, a pressure of about 50 kgf is applied to the front substrate 11 and the rear substrate 12 which are superposed on each other.
As a result, the distance between the front substrate 11 and the rear substrate 12 becomes 2 mm, which is the height of the supporting member 14, and as a result, the thickness of the indium layer becomes 0.3 mm. After that, the energization is stopped, and the heat of the sealing portion is quickly diffused to the front substrate and the rear substrate to solidify the indium.
The sealed envelope is taken out in 0 seconds.

According to such an embodiment, energization heating sealing can be carried out without causing breakage of indium, deterioration of airtightness, deviation of side wall position, and short-circuiting of lead wires, and mass productivity can be improved. It was a moth. In this example, indium was used as the first sealing material and frit glass was used as the second sealing material. However, regarding these materials, the melting or softening temperature of the first sealing material is the same as that of the second sealing material. Other materials may be used as long as they are materials having a relationship lower than the melting or softening temperature. Furthermore, the current to be applied is not limited to direct current,
Commercial frequency or high frequency alternating current may be used.

(Embodiment 2) In this embodiment, as shown in FIG. 6, the sealing portion 30 in which the peripheral portions of the front substrate 11 and the rear substrate 12 are sealed is a rectangular frame formed of glass. The side wall 40 of FIG.

That is, the side wall 40 is adhered to the peripheral portion of the rear substrate 12 by the frit glass 42, and the frame-shaped high melting point conductive member 18 is adhered to the side wall 40 via the frit glass 34. . The high melting point conductive member 18 is adhered to the peripheral portion of the front substrate 11 via the indium 32.

Since the side wall 40 is included, the refractory conductive member 18 has a width of 2 mm and a height of 0.2 mm.
Therefore, the cross-sectional area of the high melting point conductive member 18 is 0.4 mm.
² , which is smaller than that of the first embodiment. Therefore,
The current required for electric heating is set to 300 A to 80 A in the first embodiment.
Therefore, it was possible to reduce the heat generation of the current-carrying device.

According to the FED and the method of manufacturing the FED configured as described above, the high melting point conductive member can be sealed to the back substrate and the remaining substrate in two steps, and at the same time, the final sealing is performed. The encapsulation can be energized heat sealing with excellent mass productivity. In addition, a high melting point conductive member is secondarily
By sealing one substrate with the sealing material and then sealing it with the other substrate through the first sealing material by energization heating sealing, the thickness of the sealing portion can be kept uniform. Thus, it is possible to obtain a highly airtight sealed part. At the same time, it is possible to accurately seal the high-melting-point conductive member to be the side wall at a desired position.

Further, by making the second sealing material insulative, it is possible to ensure electrical insulation between the lead wire on the rear substrate and the high melting point conductive member. From the above,
It is possible to obtain an FED that can be easily and surely sealed in a vacuum atmosphere without causing a problem of deterioration of airtightness or insulation from a lead wire, and a manufacturing method thereof.

The present invention is not limited to the above-mentioned embodiments, but can be variously modified within the scope of the present invention. For example, in the above-described embodiment, the first sealing material is preliminarily filled on both surfaces of the high-melting-point conductive member and the front substrate, but either one may be filled. Also,
Appropriate undercoating may be performed between the first sealing material and the substrate. Further, the high-melting-point conductive member may be adhered to the rear substrate via the first sealing material and may be adhered to the front substrate via the second sealing material.

The present invention is not limited to a display device that requires a vacuum envelope such as an FED or SED, but may be a PDP.
It is also effective for other display devices in which the discharge gas is injected after the vacuum is once generated.

[0047]

As described above in detail, according to the present invention, it is possible to provide a flat display device capable of easily and reliably sealing in a vacuum atmosphere, and a manufacturing method thereof. .

[Brief description of drawings]

FIG. 1 is a perspective view showing an FED according to an embodiment of the present invention.

FIG. 2 is a perspective view showing a state in which a front substrate of the FED is removed.

3 is a cross-sectional view taken along the line AA of FIG.

FIG. 4 is a plan view showing a phosphor screen of the FED.

FIG. 5 is a diagram schematically showing a vacuum processing apparatus used for manufacturing the FED.

FIG. 6 is a sectional view showing an FED according to another embodiment of the present invention.

[Explanation of symbols]

10 ... Vacuum envelope 11 ... Front substrate 12 ... Rear substrate 14 ... Support member 16 ... Phosphor screen 17 ... Metal back layer 18 ... High melting point conductive member 22 ... Electron emitting device 30 ... Sealing part 32 ... First sealing material 34 ... Second sealing material 40 ... Side wall 42 ... Frit glass 100 ... Vacuum processing device

Continued front page    (72) Inventor Akiyoshi Yamada             2 shares, 1-9-1 Harara-cho, Fukaya City, Saitama Prefecture             Company Toshiba Fukaya Factory (72) Inventor Koji Nishimura             2 shares, 1-9-1 Harara-cho, Fukaya City, Saitama Prefecture             Company Toshiba Fukaya Factory F-term (reference) 5C012 AA05 BC03                 5C032 AA01 BB01                 5C036 EE14 EE15 EF01 EF06 EF09                       EG02 EG06 EH11

Claims (19)

[Claims] 1. An envelope having a front substrate and a rear substrate which are arranged opposite to each other, and a sealing portion which seals the peripheral portions of the front substrate and the rear substrate to each other, wherein the sealing portion is A frame-shaped high melting point conductive member and first and second sealing materials, wherein the first sealing material has a lower melting point or softening point than the second sealing material, and the high melting point conductive material The conductive member has a melting point or softening point higher than that of the first and second sealing materials, and the high melting point conductive member is bonded to one of the front substrate and the rear substrate via the first sealing material. A flat panel display device, characterized in that it is adhered to the other of the front substrate and the rear substrate via a second sealing material. 2. The flat panel display device according to claim 1, wherein the second sealing material is an insulating material. 3. The flat panel display device according to claim 1, wherein the second sealing material is frit glass. 4. The melting point or softening point of the second sealing material is 30.
It is 0 degreeC or more, The flat display apparatus of Claim 1 or 2 characterized by the above-mentioned. 5. The coefficient of thermal expansion of the second sealing material is ± 20% of the coefficient of thermal expansion of the front substrate or back substrate to be bonded.
3. The flat panel display device according to claim 1, wherein the flat panel display device is in the range. 6. The flat panel display device according to claim 1, wherein the second sealing material has a thickness of 100 μm or more. 7. The flat panel display device according to claim 1, wherein the first sealing material is a material having conductivity. 8. The flat panel display device according to claim 1, wherein the first sealing material is indium or an alloy containing indium. 9. The melting point or softening point of the first sealing material is 30.
The flat display device according to claim 1, wherein the temperature is lower than 0 ° C. 10. The high melting point conductive member is at least F.
10. The flat panel display device according to claim 1, which contains any one of e, Cr, Ni, and Al. 11. The melting point of the high melting point conductive member is 500.degree.
The flat display device according to any one of claims 1 to 9, which is the above. 12. The coefficient of thermal expansion of the high melting point conductive member is:
± 2 of the coefficient of thermal expansion of each of the front substrate and the rear substrate
10. The flat panel display device according to claim 1, wherein the flat display device has a value lower than the maximum value in the numerical range of 0%. 13. A cross-sectional area of the high melting point conductive member is 0.
10. The flat display device according to claim 1, wherein the flat display device has a size of 1 mm ² or more. 14. The front substrate and the high melting point conductive member are adhered to each other via the first sealing material, and the rear substrate and the high melting point conductive member are bonded to each other via the second sealing material. 10. The flat panel display device according to claim 1, wherein the flat display device is bonded to the flat display device. 15. The interior of the envelope is provided with a phosphor and an electron source for exciting the phosphor, and the interior of the envelope is maintained in vacuum.
15. The flat panel display device according to claim 1. 16. A front substrate and a rear substrate which are arranged to face each other, and a peripheral portion of the front substrate and the rear substrate are sealed with each other by a sealing portion including a high melting point conductive member and first and second sealing materials. In a method for manufacturing a flat panel display device having an attached envelope, a frame-shaped high melting point conductive member having a melting point or a softening point higher than those of the first and second sealing materials is prepared, The second sealing material having a melting point or softening point higher than that of the first sealing material adheres the high melting point conductive member to the peripheral portion of one of the front substrate and the rear substrate, The above-mentioned one substrate to which the member is bonded,
By arranging the other substrate to face each other and disposing a first sealing material between the high melting point conductive member and a peripheral portion of the other substrate, and energizing the high melting point conductive member, A method of manufacturing a flat display device, characterized in that the first sealing material is melted or softened to bond the high melting point conductive member and the other substrate. 17. The one substrate to which the high-melting-point conductive member is bonded and the other substrate are arranged in a vacuum atmosphere,
17. The high melting point conductive member is energized after the front substrate and the rear substrate are positioned.
A method of manufacturing the flat panel display device according to. 18. The method of manufacturing a flat panel display device according to claim 16, wherein the first sealing material is indium or an alloy containing indium. 19. The high melting point conductive member is at least F.
18. The method for manufacturing a flat panel display device according to claim 16, which contains any one of e, Cr, Ni, and Al.