JP2003124396A - Elastic electric contact - Google Patents
Elastic electric contactInfo
- Publication number
- JP2003124396A JP2003124396A JP2001317170A JP2001317170A JP2003124396A JP 2003124396 A JP2003124396 A JP 2003124396A JP 2001317170 A JP2001317170 A JP 2001317170A JP 2001317170 A JP2001317170 A JP 2001317170A JP 2003124396 A JP2003124396 A JP 2003124396A
- Authority
- JP
- Japan
- Prior art keywords
- elastic
- elastic member
- conductive film
- electrical contact
- elastic electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Landscapes
- Coupling Device And Connection With Printed Circuit (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、半導体基板,回
路基板,インターポーザー,ICソケット,及びベアチ
ップ検査用ソケット等に用いることができる弾性電気接
点の構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an elastic electric contact which can be used for a semiconductor substrate, a circuit board, an interposer, an IC socket, a bare chip inspection socket and the like.
【0002】[0002]
【従来の技術】従来、この種の弾性電気接点として、特
開昭61−259548号記載の技術がある。図16
は、この従来の技術を示す部分断面図である。図16に
おいて、符号201,202,203は、それぞれ半導
体基板,アルミ配線,絶縁層であり、半導体基板201
のアルミ配線202に弾性電気接点210が電気的に接
続されている。弾性電気接点210は、アルミやニッケ
ルを真空蒸着法によってアルミ配線202に蒸着して形
成したバリヤー層211と、バリヤー層211上にシリ
コンゴムをスクリーン印刷により略半球式に盛って形成
した弾性部材212と、弾性部材212の全表面に一様
の厚さの金メッキを施して形成した導電性膜としての導
電層213とで構成されている。2. Description of the Related Art Conventionally, as a resilient electric contact of this type, there is a technique described in Japanese Patent Laid-Open No. 61-259548. FIG.
FIG. 7 is a partial cross-sectional view showing this conventional technique. In FIG. 16, reference numerals 201, 202, and 203 denote a semiconductor substrate, aluminum wiring, and an insulating layer, respectively.
The elastic electrical contact 210 is electrically connected to the aluminum wiring 202. The elastic electrical contact 210 includes a barrier layer 211 formed by vapor-depositing aluminum or nickel on the aluminum wiring 202 by a vacuum vapor deposition method, and an elastic member 212 formed by forming silicon rubber on the barrier layer 211 by screen printing in a substantially hemispherical manner. And a conductive layer 213 as a conductive film formed by plating the entire surface of the elastic member 212 with a uniform thickness of gold.
【0003】かかる構成により、半導体基板201とガ
ラス基板220とを接近させ、弾性電気接点210とラ
ンド221とを接触させた状態で、半導体基板201又
はガラス基板220の一方を他方側に押圧することによ
り、弾性部材212の弾性によって、弾性電気接点21
0とランド221との確実な電気接続を図るようにして
いる。With this structure, one of the semiconductor substrate 201 and the glass substrate 220 is pressed to the other side while the semiconductor substrate 201 and the glass substrate 220 are brought close to each other and the elastic electrical contact 210 and the land 221 are in contact with each other. The elasticity of the elastic member 212 allows the elastic electrical contact 21
0 and the land 221 are ensured to be electrically connected.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、上記し
た従来の弾性電気接点210では、次のような問題があ
る。まず、導電層213が弾性部材212の全表面を覆
っているので、導電層213に亀裂が発生して、接続不
良を起こし易い。即ち、弾性電気接点210をランド2
21上に押圧したときに、導電層213が弾性部材21
2に追従して変形することで、弾性電気接点210とラ
ンド221との確実な電気的接続が図られる。しかし、
導電層213の弾性率が弾性部材212の弾性率比べて
著しく小さく、しかも、導電層213が弾性部材212
の全表面を覆った構造になっているので、弾性電気接点
210の押圧時に、導電層213が弾性部材212に追
従して変形せず、亀裂などを発生する可能性がある。次
に、導電層213が摩耗して弾性電気接点210が短期
間で使い物にならなくなる。即ち、半導体基板201を
垂直方向Vに下げて、弾性電気接点210をランド22
1に接触させるが、実際には、弾性電気接点210とラ
ンド221との接触後に、半導体基板201が僅かに水
平方向Hに移動する。このため、弾性電気接点210の
先端部分である接触部分213aがランド221との摩
擦によって摩耗することになる。このとき、導電層21
3が一様の厚さの薄い金メッキであるので、摩擦の繰り
返しによって短期間で導電層213の接触部分213a
が摩耗してしまう。この結果、接触部分213aで弾性
部材212がむき出しになり、弾性電気接点210が短
期間で使用不可能になってしまうおそれがある。However, the above-mentioned conventional elastic electrical contact 210 has the following problems. First, since the conductive layer 213 covers the entire surface of the elastic member 212, a crack is likely to occur in the conductive layer 213 and a connection failure is likely to occur. That is, the elastic electrical contact 210 is connected to the land 2
21 when the conductive layer 213 is pressed against the elastic member 21.
By deforming following 2, the elastic electrical contact 210 and the land 221 can be reliably electrically connected. But,
The elastic modulus of the conductive layer 213 is significantly smaller than that of the elastic member 212, and moreover, the conductive layer 213 has the elastic member 212.
Since it has a structure covering the entire surface of, the conductive layer 213 does not follow the elastic member 212 and is deformed when the elastic electrical contact 210 is pressed, and a crack or the like may occur. Then, the conductive layer 213 is worn and the elastic electrical contact 210 becomes unusable in a short period of time. That is, the semiconductor substrate 201 is lowered in the vertical direction V, and the elastic electrical contact 210 is attached to the land 22.
1, but the semiconductor substrate 201 is slightly moved in the horizontal direction H after the contact between the elastic electrical contact 210 and the land 221. Therefore, the contact portion 213a, which is the tip end portion of the elastic electrical contact 210, is worn by friction with the land 221. At this time, the conductive layer 21
Since 3 is thin gold plating having a uniform thickness, repeated contact with friction causes a contact portion 213a of the conductive layer 213 in a short period of time.
Wears out. As a result, the elastic member 212 may be exposed at the contact portion 213a, and the elastic electrical contact 210 may become unusable in a short period of time.
【0005】この発明は上述した課題を解決するために
なされたもので、寿命の長期化と確実な電気的接続が可
能な弾性電気接点を提供することを目的とするものであ
る。The present invention has been made in order to solve the above-mentioned problems, and an object thereof is to provide an elastic electrical contact capable of extending the life and ensuring reliable electrical connection.
【0006】[0006]
【課題を解決するための手段】上記課題を解決するため
に、請求項1の発明に係る弾性電気接点は、略半球形状
の弾性部材と、この弾性部材の先端面に端部を有し、且
つこの先端面から弾性部材の表面に沿って弾性部材の基
部側に至り、基部より外方に延出した帯状の導電性膜と
具備する構成とした。かかる構成により、半導体基板等
の電極に弾性電気接点の導電性膜を接続させた状態で、
弾性部材の基部側を半導体基板に取り付け、弾性電気接
点の先端部を回路基板のランドなどに接触させると、導
電性膜の端部がランドに接触して、回路基板と半導体基
板との電気的接続が図られる。半導体基板を回路基板側
に押圧すると、弾性電気接点の弾性部材が変形するが、
導電性膜が帯状に形成され、弾性部材全面を覆っていな
いので、導電性膜が弾性部材に追従して変形する。In order to solve the above-mentioned problems, an elastic electrical contact according to the invention of claim 1 has a substantially hemispherical elastic member and an end portion on the tip surface of the elastic member, In addition, a strip-shaped conductive film extending from the tip surface to the base side of the elastic member along the surface of the elastic member and extending outward from the base is provided. With this configuration, in a state where the conductive film of the elastic electrical contact is connected to the electrode of the semiconductor substrate or the like,
When the base side of the elastic member is attached to the semiconductor substrate and the tip end of the elastic electric contact is brought into contact with the land of the circuit board, the end of the conductive film is brought into contact with the land to electrically connect the circuit board and the semiconductor substrate. Connection is made. When the semiconductor substrate is pressed toward the circuit board side, the elastic member of the elastic electrical contact is deformed,
Since the conductive film is formed in a strip shape and does not cover the entire surface of the elastic member, the conductive film follows the elastic member and is deformed.
【0007】さらに、請求項2の発明は、請求項1に記
載の弾性電気接点において、導電性膜の端部の膜厚を他
の部分の膜厚の1倍〜10倍に設定した構成としてあ
る。かかる構成により、回路基板のランド等との摩擦に
より弾性電気接点の導電性膜の端部が完全に摩耗して弾
性部材が露出するまでに、端部の膜厚に対応した長期間
の使用が可能である。Further, the invention of claim 2 is the elastic electrical contact according to claim 1, wherein the thickness of the end portion of the conductive film is set to 1 to 10 times the thickness of the other portion. is there. With such a configuration, it is possible to use for a long period of time corresponding to the film thickness of the end of the conductive film of the elastic electric contact until the end of the conductive film of the elastic electric contact is completely worn and the elastic member is exposed due to friction with the land of the circuit board. It is possible.
【0008】特に、請求項3の発明は、請求項1または
請求項2に記載の弾性電気接点において、弾性部材の基
部の肉抜きを行って当該基部に中空部を形成した構成と
してある。かかる構成のより、弾性部材の基部側に柔軟
性が生じる。In particular, the invention according to claim 3 is the elastic electrical contact according to claim 1 or 2, wherein the base portion of the elastic member is thinned to form a hollow portion in the base portion. With such a configuration, flexibility is generated on the base side of the elastic member.
【0009】ところで、弾性部材と導電性膜の材質は任
意であるが、その好例として、請求項4の発明は、請求
項1ないし請求項3のいずれかに記載の弾性電気接点に
おいて、弾性部材を、シリコンゴムで形成した構成とし
てある。By the way, the materials of the elastic member and the conductive film are arbitrary, but as a good example thereof, the invention of claim 4 is the elastic electrical contact according to any one of claims 1 to 3, Is made of silicon rubber.
【0010】[0010]
【発明の実施の形態】以下、この発明の実施の形態につ
いて図面を参照して説明する。
(第1の実施形態)図1は、この発明の第1の実施形態
にかかる弾性電気接点を示す斜視図であり、図2は図1
の矢視A−A断面図である。図に示すように、弾性電気
接点1は、弾性部材2と導電性膜3を備えてなる。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) FIG. 1 is a perspective view showing an elastic electrical contact according to a first embodiment of the present invention, and FIG.
FIG. 9 is a sectional view taken along line AA of FIG. As shown in the figure, the elastic electrical contact 1 comprises an elastic member 2 and a conductive film 3.
【0011】弾性部材2は、シリコンを半球形状に型と
って形成したもので、その先端面20から側面21に沿
って帯状の導電性膜3が付着されている。The elastic member 2 is formed of silicon in a hemispherical shape, and has a band-shaped conductive film 3 attached from the tip end surface 20 to the side surface 21 thereof.
【0012】導電性膜3は、頭部30(端部)と胴部3
1と延出部32とよりなり、頭部30の下部層30aと
胴部31と延出部32とが、チタン及びパラジウムによ
って一体に形成されている。The conductive film 3 has a head portion 30 (end portion) and a body portion 3
1 and the extension 32, the lower layer 30a of the head 30, the body 31 and the extension 32 are integrally formed of titanium and palladium.
【0013】頭部30の下部層30aは、円形状をな
し、弾性部材2の先端面20の上に付着されている。そ
して、この下部層30aの上に同形の上部層30bが積
層されている。この上部層30bは金メッキにより形成
されており、下部層30aと共に頭部30を構成してい
る。The lower layer 30a of the head portion 30 has a circular shape and is attached onto the tip surface 20 of the elastic member 2. Then, the upper layer 30b having the same shape is laminated on the lower layer 30a. The upper layer 30b is formed by gold plating and constitutes the head portion 30 together with the lower layer 30a.
【0014】導電性膜3の胴部31は、帯状をなし、下
部層30aから引き出された状態で、弾性部材2の側面
21に沿って基部22に至っている。延出部32は、上
記胴部31から引き出された状態で、弾性部材2の外方
に所定長さだけ延出されている。そして、頭部30の厚
さが他の胴部31や延出部32の厚さよりも上部層30
bの厚さだけ厚くなっている。この実施形態では、頭部
30の厚さTを胴部31(延出部32)の厚さtの2倍
に設定した。The body portion 31 of the conductive film 3 has a strip shape and extends to the base portion 22 along the side surface 21 of the elastic member 2 in a state of being pulled out from the lower layer 30a. The extending portion 32 is extended from the elastic member 2 by a predetermined length while being pulled out from the body portion 31. The thickness of the head portion 30 is larger than the thicknesses of the other body portion 31 and the extension portion 32.
It is thickened by the thickness of b. In this embodiment, the thickness T of the head portion 30 is set to be twice the thickness t of the body portion 31 (extension portion 32).
【0015】次に、この実施形態の弾性電気接点1の製
造方法について説明する。弾性電気接点1は、次の弾性
部材形成工程と導電性膜形成工程と増厚工程とを経て製
造される。図3,図4,図5は、弾性部材形成工程,導
電性膜形成工程,増厚工程をそれぞれ示す順工程図であ
る。Next, a method of manufacturing the elastic electrical contact 1 of this embodiment will be described. The elastic electrical contact 1 is manufactured through the following elastic member forming step, conductive film forming step, and thickness increasing step. 3, FIG. 4, and FIG. 5 are sequential process diagrams showing an elastic member forming process, a conductive film forming process, and a thickness increasing process, respectively.
【0016】まず、弾性部材形成工程においては、図3
の(a)に示すように、半球形状の穴100aを有する
型100を用意し、同図の(b)に示すように、離型剤
101を型100の表面に塗布する。そして、離型剤1
01が乾燥した後に、同図の(c)に示すように、シリ
コン2’を型100の穴100a内に充填し、同図の
(d)に示すように、絶縁フィルム102をシリコン
2’を覆うように貼り付ける。しかる後、シリコン2’
が固まって半球形状の弾性部材2を形成した後に、弾性
部材2が固着した絶縁フィルム102を型100から剥
離することで、弾性部材形成工程を終了する。First, in the elastic member forming step, as shown in FIG.
As shown in (a), a mold 100 having a hemispherical hole 100a is prepared, and as shown in (b) in the figure, a mold release agent 101 is applied to the surface of the mold 100. And the release agent 1
After 01 is dried, silicon 2'is filled in the hole 100a of the mold 100 as shown in FIG. 3C, and the insulating film 102 is filled with silicon 2'as shown in FIG. Stick to cover. After that, silicon 2 '
After forming the hemispherical elastic member 2 by hardening, the insulating film 102 to which the elastic member 2 is fixed is peeled off from the mold 100, thereby completing the elastic member forming step.
【0017】次に、導電性膜形成工程においては、図4
の(a)に示すように、絶縁フィルム102に固着した
弾性部材2の上にシャドウマスク103を配置する。図
4の(b)は、同図(a)の上方から見た平面図であ
る。この図に示すように、シャドウマスク103は円形
孔104aと帯状孔104bとを有したマッチ棒状の孔
104が穿設されている。従って、孔104を介して、
チタン及びパラジウムを蒸着することで、図4の(c)
に示すように、導電性膜3が弾性部材2上に成膜され
る。具体的には、図4の(d)に示すように、導電性膜
3の下部層30aが弾性部材2の先端面に成膜され、胴
部31が弾性部材2の側面に成膜される。そして、延出
部32が絶縁フィルム102上に成膜されて、導電性膜
形成工程が終了する。Next, in the conductive film forming step, as shown in FIG.
(A), the shadow mask 103 is arranged on the elastic member 2 fixed to the insulating film 102. FIG. 4B is a plan view seen from above in FIG. As shown in this figure, the shadow mask 103 is provided with a match rod-shaped hole 104 having a circular hole 104a and a band-shaped hole 104b. Therefore, through the hole 104,
By depositing titanium and palladium, (c) of FIG.
As shown in, the conductive film 3 is formed on the elastic member 2. Specifically, as shown in FIG. 4D, the lower layer 30 a of the conductive film 3 is formed on the tip surface of the elastic member 2, and the body 31 is formed on the side surface of the elastic member 2. . Then, the extending portion 32 is formed on the insulating film 102, and the conductive film forming step ends.
【0018】最後に、増厚工程においては、図5の
(a)に示すように、弾性部材2及び導電性膜3を覆う
ようにして、フォトレジスト105を絶縁フィルム10
2上に塗布する。そして、同図の(b)に示すように、
導電性膜3の下部層30aと対応する部分をエッチング
して、孔105aを形成する。図5の(c)は、同図の
(b)の上方から見た平面図である。この図に示すよう
に、孔105aは、下部層30aと同形状に設定されて
いる。しかる後、同図の(d)及びこの図の上方から見
た平面図(e)に示すように、フォトレジスト105の
孔105aを介し手金メッキを行い、上部層30bを下
部層30a上に付着させることで、増厚工程は終了す
る。Finally, in the thickening step, as shown in FIG. 5A, the photoresist 105 is covered with the insulating film 10 so as to cover the elastic member 2 and the conductive film 3.
Apply on top of 2. Then, as shown in FIG.
A portion of the conductive film 3 corresponding to the lower layer 30a is etched to form the hole 105a. FIG. 5C is a plan view seen from above in FIG. 5B. As shown in this figure, the hole 105a has the same shape as the lower layer 30a. Then, as shown in (d) of the same figure and a plan view (e) viewed from above in this figure, gold plating is performed through the holes 105a of the photoresist 105 to attach the upper layer 30b onto the lower layer 30a. By doing so, the thickening step is completed.
【0019】上記のように、弾性部材形成工程,導電性
膜形成工程,増厚工程を順次実行した後、最後に、フォ
トレジスト105を除去することで、図6の(a)及び
(b)に示すように、絶縁フィルム102上に載った弾
性電気接点1を得ることができる。As described above, the elastic member forming step, the conductive film forming step, and the thickening step are sequentially performed, and finally, the photoresist 105 is removed, whereby (a) and (b) of FIG. As shown in, the elastic electrical contact 1 mounted on the insulating film 102 can be obtained.
【0020】次に、上記コネクタ1の使用例について説
明する。図7は、弾性電気接点1をインターポーザに使
用した例を示す断面図である。このインターポーザ11
0は、一対の弾性電気接点1(1−1,1−2)を絶縁
フィルム102の両面に取り付け、これらの弾性電気接
点1−1,1−2を絶縁フィルム102のスルーホール
102aを介して電気的に連通した構造になっている。
すなわち、内側面に銅箔102bが付着されたスルーホ
ール102aが絶縁フィルム102の所定箇所に複数設
けられている。そして、各スルーホール102aに近傍
両面に、一対の弾性電気接点1−1,1−2が配設さ
れ、各弾性電気接点1の延出部32が銅箔102bと電
気的に接続されている。Next, an example of use of the connector 1 will be described. FIG. 7 is a sectional view showing an example in which the elastic electrical contact 1 is used for an interposer. This interposer 11
0 attaches a pair of elastic electrical contacts 1 (1-1, 1-2) to both sides of the insulating film 102, and these elastic electrical contacts 1-1 and 1-2 are connected through the through holes 102 a of the insulating film 102. It has a structure that is electrically connected.
That is, a plurality of through holes 102a having copper foils 102b attached to the inner surface thereof are provided at predetermined locations on the insulating film 102. A pair of elastic electrical contacts 1-1 and 1-2 are arranged on both sides in the vicinity of each through hole 102a, and the extending portion 32 of each elastic electrical contact 1 is electrically connected to the copper foil 102b. .
【0021】図8は、半導体基板としてのICチップと
バーンインソケットとを接続するために、インターポー
ザ110を用いた例を示す断面図である。図8におい
て、符号111がICチップであり、符号112がバー
ンインソケットである。図に示すように、インターポー
ザ110をバーンインソケット112内に収納すると、
インターポーザ110の下側の弾性電気接点1−2がバ
ーンインソケット112のランド112aと接触する。
そして、ICチップ111をインターポーザ110の上
に載置すると、インターポーザ110の上側の弾性電気
接点1−1がICチップ111の電極111aに接触す
る。この状態で、ICチップ111とバーンインソケッ
ト112とを図示しない抑えバネなどで挟持すると、I
Cチップ111が下降してインターポーザ110を押圧
する。これにより、図9に示すように、弾性電気接点1
−1,1−2がインターポーザ110側に圧縮されるの
で、各弾性電気接点1−1(1−2)の弾性部材2の弾
性力によって、弾性電気接点1−1の導電性膜3の上部
層30bがICチップ111の電極111aに圧接し、
弾性電気接点1−2の上部層30bがバーンインソケッ
ト112のランド112aに圧接する。この結果、電極
111aとランド112aとが弾性電気接点1−1,1
−2の導電性膜3及び絶縁フィルム102の銅箔102
bを介して連通し、ICチップ111とバーンインソケ
ット112とがインターポーザ110を介して電気的に
接続された状態になる。FIG. 8 is a sectional view showing an example in which an interposer 110 is used to connect an IC chip as a semiconductor substrate and a burn-in socket. In FIG. 8, reference numeral 111 is an IC chip, and reference numeral 112 is a burn-in socket. As shown in the figure, when the interposer 110 is housed in the burn-in socket 112,
The elastic electrical contact 1-2 on the lower side of the interposer 110 contacts the land 112 a of the burn-in socket 112.
When the IC chip 111 is placed on the interposer 110, the elastic electrical contact 1-1 on the upper side of the interposer 110 comes into contact with the electrode 111a of the IC chip 111. In this state, if the IC chip 111 and the burn-in socket 112 are sandwiched by a holding spring (not shown), I
The C chip 111 descends and presses the interposer 110. As a result, as shown in FIG.
Since -1, 1-2 are compressed toward the interposer 110 side, the elastic force of the elastic member 2 of each elastic electrical contact 1-1 (1-2) causes an upper part of the conductive film 3 of the elastic electrical contact 1-1. The layer 30b is in pressure contact with the electrode 111a of the IC chip 111,
The upper layer 30b of the elastic electrical contact 1-2 presses against the land 112a of the burn-in socket 112. As a result, the electrodes 111a and the lands 112a have elastic contact points 1-1, 1
-2 of the conductive film 3 and the insulating film 102 of the copper foil 102
The IC chip 111 and the burn-in socket 112 are electrically connected to each other via the interposer 110 by communicating with each other through the interposer 110.
【0022】ところで、ICチップ111が下降する
と、弾性電気接点1−1の導電性膜3の頭部30が電極
111aによって下方に押圧されると共に、弾性電気接
点1−2の導電性膜3の頭部30がランド112aによ
って上方に押圧される。このとき、弾性電気接点1の導
電性膜3が弾性部材2の全面を被覆していないので、弾
性部材2の変形に追従して撓むことになる。すなわち、
例えば、導電性膜3が弾性部材2の全面を覆っていると
すると、導電性膜3の断面は、図10に示すように、ア
ーチ状の両端支持梁のごとき形状になる。このため、大
きな下方力Fが働くと、接線方向の分力FθとFθ’と
による引っ張り力によって、導電性膜3が避けて亀裂が
生じるおそれがある。これに対して、この実施形態の導
電性膜3では、その断面が、図11に示すように、半ア
ーチ状の片持ち梁のような形状をしているので、大きな
下方力Fが働くと、その接線方向の分力Fθによる引っ
張り力は働かず、導電性膜3が下方に撓むだけである。
このように、この実施形態の弾性電気接点1によれば、
弾性電気接点1への押圧時に導電性膜3に亀裂が生じる
ことがないので、弾性電気接点1による確実な電気的接
続が可能である。By the way, when the IC chip 111 descends, the head portion 30 of the conductive film 3 of the elastic electric contact 1-1 is pressed downward by the electrode 111a, and at the same time, the conductive film 3 of the elastic electric contact 1-2 is pressed. The head 30 is pressed upward by the land 112a. At this time, since the conductive film 3 of the elastic electrical contact 1 does not cover the entire surface of the elastic member 2, the elastic member 2 bends following the deformation of the elastic member 2. That is,
For example, if the conductive film 3 covers the entire surface of the elastic member 2, the cross section of the conductive film 3 has a shape like an arch-shaped both-ends supporting beam as shown in FIG. Therefore, when a large downward force F acts, the conductive film 3 may avoid and be cracked by the pulling force of the component forces Fθ and Fθ ′ in the tangential direction. On the other hand, in the conductive film 3 of this embodiment, the cross section thereof is shaped like a semi-arched cantilever as shown in FIG. 11, so that a large downward force F acts. The tensile force due to the component force Fθ in the tangential direction does not work, and the conductive film 3 only bends downward.
Thus, according to the elastic electrical contact 1 of this embodiment,
Since the conductive film 3 is not cracked when the elastic electric contact 1 is pressed, reliable electric connection by the elastic electric contact 1 is possible.
【0023】また、ICチップ111のバーンインソケ
ット112への脱着を繰り返すと、導電性膜3の頭部3
0が電極111aやランド112aの摩擦によって摩耗
するが、上記のように、頭部30の厚さTが胴部31
(延出部32)の厚さtの2倍に設定されているので、
頭部30の大部分が摩耗して弾性部材2の先端部が露出
するまでには、相当回数の着脱の繰り返しが必要であ
る。従って、この弾性電気接点1の寿命は、上記した従
来の弾性電気接点210の寿命に比べてきわめて長いと
いえる。When the IC chip 111 is repeatedly attached to and detached from the burn-in socket 112, the head 3 of the conductive film 3 is removed.
0 wears due to the friction of the electrodes 111a and the lands 112a, but as described above, the thickness T of the head portion 30 is
Since it is set to twice the thickness t of the (extended portion 32),
It is necessary to repeat attachment and detachment a considerable number of times until most of the head 30 is worn and the tip of the elastic member 2 is exposed. Therefore, it can be said that the life of the elastic electrical contact 1 is extremely longer than that of the conventional elastic electrical contact 210 described above.
【0024】(第2の実施形態)図12は、この発明の
第2の実施形態にかかる弾性電気接点を示す斜視図であ
り、図13は図12の矢視B−B断面図である。この実
施形態の弾性電気接点1’は、図に示すように、弾性部
材2の基部22の略半部を肉抜きして形成した中空部2
2aを有している点が、上記第1の実施形態と異なる。
具体的には、弾性電気接点1’の裏面を示す図14から
明らかなように、弾性部材2の基部22底面の略半部
を、図13に示すように、弾性部材2の略半部の高さま
で切り欠いて、中空部22aを形成している。このよう
に、この実施形態の弾性電気接点1’によれば、弾性部
材2の基部22に中空部22aを有しているので、中空
部22aの大きさに応じて、弾性部材2に柔軟性が増加
することになる。(Second Embodiment) FIG. 12 is a perspective view showing an elastic electrical contact according to a second embodiment of the present invention, and FIG. 13 is a sectional view taken along the line BB of FIG. As shown in the figure, the elastic electrical contact 1'of this embodiment has a hollow portion 2 formed by thinning out approximately half of the base portion 22 of the elastic member 2.
The difference from the first embodiment is that it has 2a.
Specifically, as is clear from FIG. 14 showing the back surface of the elastic electrical contact 1 ′, approximately half of the bottom surface of the base portion 22 of the elastic member 2 corresponds to approximately half of the elastic member 2 as shown in FIG. The hollow portion 22a is formed by cutting out to the height. As described above, according to the elastic electrical contact 1 ′ of this embodiment, since the base 22 of the elastic member 2 has the hollow portion 22a, the elastic member 2 is flexible depending on the size of the hollow portion 22a. Will increase.
【0025】最後に、この実施形態の弾性電気接点1’
に関する製法の一例を説明しておく。この実施形態の弾
性電気接点1’も、図3ないし図5に示した弾性部材形
成工程と導電性膜形成工程と増厚工程とを経て製造され
るが、弾性部材形成工程において工夫が高じられてい
る。即ち、図15の(a)に示すように、シリコン2’
を型100の穴100a内に充填すると共に、中空部2
2aと同形のフォトレジスト102cを有した絶縁フィ
ルム102を貼り付ける。この際、フォトレジスト10
2cが型100の穴100a内に入り込むように、絶縁
フィルム102を型100に貼り付ける。しかる後、導
電性膜形成工程と増厚工程とを経て、図15の(b)に
示すように、弾性部材2と導電性膜3とフォトレジスト
102cとを有した弾性電気接点1’を製造するが、こ
の状態では、フォトレジスト102cが残っているの
で、このフォトレジスト102cを除去することで、図
15(c)に示すように、中空部22aを有した弾性電
気接点1’を製造することができる。その他の構成,作
用効果は上記第1の実施形態と同様であるので、その記
載は省略する。Finally, the elastic electrical contact 1'of this embodiment
An example of the manufacturing method regarding will be described. The elastic electrical contact 1 ′ of this embodiment is also manufactured through the elastic member forming step, the conductive film forming step, and the thickening step shown in FIGS. 3 to 5, but the device is highly devised in the elastic member forming step. ing. That is, as shown in FIG.
While filling the hole 100a of the mold 100 with the hollow portion 2
An insulating film 102 having a photoresist 102c having the same shape as 2a is attached. At this time, the photoresist 10
The insulating film 102 is attached to the mold 100 so that 2c enters into the hole 100a of the mold 100. Thereafter, through a conductive film forming step and a thickening step, as shown in FIG. 15B, an elastic electrical contact 1 ′ having the elastic member 2, the conductive film 3 and the photoresist 102c is manufactured. However, in this state, since the photoresist 102c remains, the photoresist 102c is removed to manufacture the elastic electrical contact 1'having the hollow portion 22a as shown in FIG. 15C. be able to. Other configurations, functions and effects are the same as those of the first embodiment, and therefore the description thereof is omitted.
【0026】なお、この発明は、上記実施形態に限定さ
れるものではなく、発明の要旨の範囲内において種々の
変形や変更が可能である。例えば、上記実施形態では、
弾性部材2としてシリコンを用いたが、弾性を有するウ
レタンやゴム等を用いて弾性部材2を形成しても良い。
また、上記実施形態では、導電性膜3の下部層30a等
の素材をチタン及びパラジウムで形成したが、ニッケル
やアルミニウムで形成することもできる。また、上記実
施形態では、上部層30bの素材をを金メッキとした
が、これに限らず、高導電性金属であれば、いかなる素
材でも良い。また、上記実施形態では、導電性膜3の頭
部30を円形に設定したが、これに限定する意味ではな
い。頭部30の形状には、六角形などの多角形を含む。
また、上記実施形態では、頭部30の厚さTを胴部31
(延出部32)の厚さtの2倍に設定したが、これに限
定する意味ではなく、頭部30の厚さTを胴部31等の
厚さtの1〜10倍の間の値に設定することができる。
また、上記第1の実施形態では、導電性膜形成工程にお
いて、シャドウマスク103の孔104を介して、チタ
ン及びパラジウムを蒸着して、導電性膜3を弾性部材2
上に成膜したが、チタン及びパラジウムをスパッタリン
グして導電性膜3を弾性部材2上に成膜することもでき
る。また、上記第2の実施形態では、弾性部材2の略半
部の高さまで切り欠いて、中空部22aを形成したが、
この中空部22aの大きさや形状は任意である。弾性部
材2に対して望まれる柔軟性の度合いに応じて、種々の
大きさや形状の設定が可能である。The present invention is not limited to the above embodiment, but various modifications and changes can be made within the scope of the invention. For example, in the above embodiment,
Although silicon is used as the elastic member 2, the elastic member 2 may be formed using elastic urethane or rubber.
Further, in the above embodiment, the material of the lower layer 30a of the conductive film 3 and the like is formed of titanium and palladium, but it may be formed of nickel or aluminum. Further, although the material of the upper layer 30b is gold plated in the above embodiment, the material is not limited to this, and any material may be used as long as it is a highly conductive metal. Further, in the above-described embodiment, the head portion 30 of the conductive film 3 is set to have a circular shape, but the present invention is not limited to this. The shape of the head 30 includes a polygon such as a hexagon.
Further, in the above embodiment, the thickness T of the head portion 30 is set to the body portion 31.
Although the thickness t of the (extended portion 32) is set to be twice, the thickness T of the head portion 30 is not limited to this, and the thickness T of the body portion 31 is 1 to 10 times the thickness t. Can be set to a value.
In addition, in the first embodiment, in the conductive film forming step, titanium and palladium are vapor-deposited through the holes 104 of the shadow mask 103, so that the conductive film 3 is attached to the elastic member 2.
Although formed on the elastic member 2, the conductive film 3 may be formed on the elastic member 2 by sputtering titanium and palladium. Further, in the second embodiment described above, the hollow portion 22a is formed by notching the elastic member 2 up to the height of approximately half thereof.
The size and shape of the hollow portion 22a are arbitrary. Various sizes and shapes can be set according to the degree of flexibility desired for the elastic member 2.
【0027】[0027]
【発明の効果】以上詳しく説明したように、この発明に
よれば、弾性電気接点の導電性膜が、弾性部材の変形に
追従して変形するので、導電性膜の亀裂が生じることが
なく、電気的接続の確実性が向上するという優れた効果
がある。As described in detail above, according to the present invention, the conductive film of the elastic electrical contact is deformed following the deformation of the elastic member, so that the conductive film is not cracked. There is an excellent effect that the reliability of electrical connection is improved.
【0028】また、弾性電気接点の端部の導電性膜厚を
他の部分の膜厚の1倍〜10倍に設定することにより、
弾性電気接点の長寿命化を図ることができる。Further, by setting the conductive film thickness at the end of the elastic electrical contact to be 1 to 10 times the film thickness of other portions,
It is possible to extend the life of the elastic electrical contact.
【0029】さらに、弾性部材の基部の肉抜きを行うこ
とで、弾性電気接点全体の柔軟性を向上させることがで
きる。Further, by thinning the base of the elastic member, the flexibility of the elastic electric contact as a whole can be improved.
【図1】この発明の第1の実施形態にかかる弾性電気接
点を示す斜視図である。FIG. 1 is a perspective view showing an elastic electrical contact according to a first embodiment of the present invention.
【図2】図1の矢視A−A断面図である。FIG. 2 is a sectional view taken along the line AA of FIG.
【図3】弾性部材形成工程を示す順工程図である。FIG. 3 is a process step diagram showing an elastic member forming step.
【図4】導電性膜形成工程示す順工程図である。FIG. 4 is a sequential process diagram showing a conductive film forming process.
【図5】増厚工程を示す順工程図である。FIG. 5 is a flow chart showing a thickening step.
【図6】絶縁フィルム上に載った弾性電気接点を示す断
面図である。FIG. 6 is a cross-sectional view showing an elastic electrical contact mounted on an insulating film.
【図7】弾性電気接点をインターポーザに使用した例を
示す断面図である。FIG. 7 is a cross-sectional view showing an example in which elastic electric contacts are used for an interposer.
【図8】インターポーザの使用例を示す断面図である。FIG. 8 is a cross-sectional view showing a usage example of the interposer.
【図9】ICチップとバーンインソケットとがインター
ポーザを介して電気的に接続した状態を示す断面図であ
る。FIG. 9 is a cross-sectional view showing a state in which an IC chip and a burn-in socket are electrically connected via an interposer.
【図10】導電性膜の亀裂現象を説明するための模式図
である。FIG. 10 is a schematic diagram for explaining a crack phenomenon of a conductive film.
【図11】本実施形態の導電性膜の作用を示す模式図で
ある。FIG. 11 is a schematic view showing the action of the conductive film of the present embodiment.
【図12】この発明の第2の実施形態にかかる弾性電気
接点を示す斜視図である。FIG. 12 is a perspective view showing an elastic electrical contact according to a second embodiment of the present invention.
【図13】図12の矢視B−B断面図である。13 is a sectional view taken along the line BB of FIG.
【図14】電気接点の裏面を示す平面図である。FIG. 14 is a plan view showing the back surface of the electrical contact.
【図15】第2の実施形態に係る弾性電気接点の製造方
法を示す工程図である。FIG. 15 is a process drawing showing the method of manufacturing the elastic electrical contact according to the second embodiment.
【図16】従来の技術を示す部分断面図である。FIG. 16 is a partial cross-sectional view showing a conventional technique.
1…弾性電気接点、 2…弾性部材、 3…導電性膜、
20…先端面、 21…側面、 22…基部、 22
a…中空部、 30…頭部、 30a…下部層、 30
b…上部層、 31…胴部、 32…延出部。1 ... Elastic electrical contact, 2 ... Elastic member, 3 ... Conductive film,
20 ... Tip surface, 21 ... Side surface, 22 ... Base portion, 22
a ... hollow part, 30 ... head part, 30a ... lower layer, 30
b ... upper layer, 31 ... trunk, 32 ... extension part.
フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01R 11/01 501 H01L 21/92 603A 12/16 H01R 23/68 303E Fターム(参考) 2G003 AA07 AD09 AG01 AG03 AG08 AG12 AG20 AH05 2G011 AA03 AA15 AA21 AB06 AB08 AC14 AE01 AE03 AF02 AF07 5E023 AA05 AA16 BB18 BB21 CC22 DD26 EE18 EE32 HH05 Front page continuation (51) Int.Cl. 7 Identification code FI theme code (reference) H01R 11/01 501 H01L 21/92 603A 12/16 H01R 23/68 303E F term (reference) 2G003 AA07 AD09 AG01 AG03 AG08 AG12 AG20 AH05 2G011 AA03 AA15 AA21 AB06 AB08 AC14 AE01 AE03 AF02 AF07 5E023 AA05 AA16 BB18 BB21 CC22 DD26 EE18 EE32 HH05
Claims (4)
ら弾性部材の表面に沿って弾性部材の基部側に至り、基
部より外方に延出した帯状の導電性膜とを具備する、 ことを特徴とする弾性電気接点。1. An elastic member having a substantially hemispherical shape, and an end portion on the tip end surface of the elastic member, and extending from the tip end surface to the base portion side of the elastic member along the surface of the elastic member and outward from the base portion. An elastic electrical contact, comprising: a strip-shaped conductive film extending to the.
て、 上記導電性膜の端部の膜厚を他の部分の膜厚の1倍〜1
0倍に設定した、 ことを特徴とする弾性電気接点。2. The elastic electrical contact according to claim 1, wherein the thickness of the end portion of the conductive film is 1 to 1 times the thickness of the other portion.
An elastic electrical contact characterized by being set to 0 times.
気接点において、 上記弾性部材の基部の肉抜きを行って当該基部に中空部
を形成した、 ことを特徴とする弾性電気接点。3. The elastic electrical contact according to claim 1, wherein the base of the elastic member is thinned to form a hollow portion in the base.
載の弾性電気接点において、 上記弾性部材を、シリコンゴムで形成した、 ことを特徴とする弾性電気接点。4. The elastic electrical contact according to claim 1, wherein the elastic member is made of silicon rubber.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001317170A JP4003208B2 (en) | 2001-10-15 | 2001-10-15 | Elastic electrical contact |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001317170A JP4003208B2 (en) | 2001-10-15 | 2001-10-15 | Elastic electrical contact |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003124396A true JP2003124396A (en) | 2003-04-25 |
JP4003208B2 JP4003208B2 (en) | 2007-11-07 |
Family
ID=19135082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001317170A Expired - Fee Related JP4003208B2 (en) | 2001-10-15 | 2001-10-15 | Elastic electrical contact |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4003208B2 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006098637A (en) * | 2004-09-29 | 2006-04-13 | Seiko Epson Corp | Semiconductor device, mounting structure, electro-optical device, method of manufacturing eectro-optical device, and electronic apparatus |
EP1648045A1 (en) * | 2004-10-06 | 2006-04-19 | LG Electronics Inc. | A battery contact system and wireless terminal having the same |
WO2010055872A1 (en) * | 2008-11-12 | 2010-05-20 | アルプス電気株式会社 | Spherical shell contact, and method for manufacturing same |
US7887336B2 (en) | 2008-06-30 | 2011-02-15 | Fujikura Ltd. | Double-sided connector with protrusions |
WO2011033871A1 (en) * | 2009-09-18 | 2011-03-24 | 株式会社村田製作所 | Coaxial connector with switch, method for manufacturing coaxial connector with switch, and communication device |
JP2011114127A (en) * | 2009-11-26 | 2011-06-09 | Seiko Epson Corp | Semiconductor device, electronic component and method for manufacturing the same |
CN101750523B (en) * | 2008-12-19 | 2011-11-23 | 京元电子股份有限公司 | Elastic test probe and manufacturing method thereof |
KR101996790B1 (en) * | 2018-04-02 | 2019-07-04 | 박석호 | Probe contact unit with improving contact reliability of probe pin |
CN113112747A (en) * | 2021-04-01 | 2021-07-13 | 呼伦贝尔安泰热电有限责任公司扎兰屯热电厂 | Near electric early warning system of modularization |
-
2001
- 2001-10-15 JP JP2001317170A patent/JP4003208B2/en not_active Expired - Fee Related
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4539268B2 (en) * | 2004-09-29 | 2010-09-08 | セイコーエプソン株式会社 | Mounting structure |
JP2006098637A (en) * | 2004-09-29 | 2006-04-13 | Seiko Epson Corp | Semiconductor device, mounting structure, electro-optical device, method of manufacturing eectro-optical device, and electronic apparatus |
EP1648045A1 (en) * | 2004-10-06 | 2006-04-19 | LG Electronics Inc. | A battery contact system and wireless terminal having the same |
US7396238B2 (en) | 2004-10-06 | 2008-07-08 | Lg Electronics Inc. | Battery contact system and wireless terminal having the same |
US7887336B2 (en) | 2008-06-30 | 2011-02-15 | Fujikura Ltd. | Double-sided connector with protrusions |
WO2010055872A1 (en) * | 2008-11-12 | 2010-05-20 | アルプス電気株式会社 | Spherical shell contact, and method for manufacturing same |
CN101750523B (en) * | 2008-12-19 | 2011-11-23 | 京元电子股份有限公司 | Elastic test probe and manufacturing method thereof |
WO2011033871A1 (en) * | 2009-09-18 | 2011-03-24 | 株式会社村田製作所 | Coaxial connector with switch, method for manufacturing coaxial connector with switch, and communication device |
JP5344041B2 (en) * | 2009-09-18 | 2013-11-20 | 株式会社村田製作所 | Coaxial connector with switch, manufacturing method of coaxial connector with switch, and communication device |
JP2011114127A (en) * | 2009-11-26 | 2011-06-09 | Seiko Epson Corp | Semiconductor device, electronic component and method for manufacturing the same |
KR101996790B1 (en) * | 2018-04-02 | 2019-07-04 | 박석호 | Probe contact unit with improving contact reliability of probe pin |
CN113112747A (en) * | 2021-04-01 | 2021-07-13 | 呼伦贝尔安泰热电有限责任公司扎兰屯热电厂 | Near electric early warning system of modularization |
CN113112747B (en) * | 2021-04-01 | 2023-05-02 | 呼伦贝尔安泰热电有限责任公司扎兰屯热电厂 | Modularized near-electricity early warning system |
Also Published As
Publication number | Publication date |
---|---|
JP4003208B2 (en) | 2007-11-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5951305A (en) | Lidless socket and method of making same | |
US7059047B2 (en) | Sockets for “springed” semiconductor devices | |
KR100891066B1 (en) | Microelectronic contact, method for fabricating microelectronic contact, semiconductor device and contact structure | |
US6384475B1 (en) | Lead formation using grids | |
TW200534493A (en) | Microelectronic packages and methods therefor | |
US20010040464A1 (en) | Electric contact device for testing semiconductor device | |
JP2003124396A (en) | Elastic electric contact | |
JPH0935789A (en) | Anisotropic conductive sheet and its manufacture | |
US6788547B2 (en) | Method of making electrical contact device | |
JP3302635B2 (en) | Electrical connector and method of manufacturing the same | |
JPH08271578A (en) | Test socket for semiconductor device | |
JPH087234B2 (en) | Test probe equipment | |
JP2000235062A (en) | Burn-in test device, and manufacture of semiconductor device using the device | |
JP2003157918A (en) | Elastic electric contact point | |
US6826037B2 (en) | Electronic structure | |
US8045331B2 (en) | Printed circuit board, method of fabricating the same, and electronic apparatus employing the same | |
JP3881543B2 (en) | Contact probe and manufacturing method thereof | |
US6317974B1 (en) | Methods for creating wear resistant contact edges | |
US20210029835A1 (en) | Silicone contact element | |
KR100978549B1 (en) | Probe structure and method of manufacturing a probe structure | |
JP4830505B2 (en) | Wiring method and donor substrate | |
JPS61234060A (en) | Manufacture of lead frame of semiconductor device | |
JP2000348793A (en) | Electric connector | |
JP2000144497A (en) | Jig for plating, and its manufacture | |
JP2004061197A (en) | Wiring board for electric connection |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A625 | Written request for application examination (by other person) |
Free format text: JAPANESE INTERMEDIATE CODE: A625 Effective date: 20031117 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20050224 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050628 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060718 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060831 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20060831 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070724 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070810 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100831 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110831 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120831 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120831 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130831 Year of fee payment: 6 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |