JP2003105538A - Plasma film forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the device in which a film forming material scattering from an evaporating source less affects a microwave plasma source in the case where these two sources are combined. SOLUTION: The device is provided with a chamber 2 for storing a substrate and with an evaporating source 4 installed in the chamber for the purpose of performing a PVD treatment on the substrate. The device is also equipped with a microwave supply source 6 for feeding a microwave from the outer circumference of a hollow cylindrical body 8 into which a gas for a plasma source is introduced. In addition, the device is equipped with a plasma 3 source for generating a microwave plasma inside the hollow cylindrical body 8 and for feeding the microwave plasma into the chamber 2 from a plasma releasing port 9 at one longitudinal end of the hollow cylindrical body 8.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma film forming apparatus in which an evaporation source for performing PVD processing and a microwave plasma source are combined.

[0002]

2. Description of the Related Art Japanese Unexamined Patent Publication No. 10-219444 discloses
In a device in which a microwave ECR plasma source and a sputtering device are integrated, a technique is disclosed in which a slit-shaped barrier is provided between a sputtering cathode and a microwave plasma chamber to prevent sputtered particles from flowing back to the plasma chamber. ing.

[0003]

When the plasma source has unwanted deposits, the plasma source may become unstable in operation, which must be prevented. However, when the slit-shaped barrier is provided to block the particles flying to the plasma source as in the technique described in Japanese Patent Laid-Open No. 10-219444, the plasma generated by the plasma source is blocked by the slit, and Moreover, there arises a problem that a desired plasma cannot be attracted.

The present invention has been made in view of the above problems, and when the evaporation source and the microwave plasma source are combined, the film forming material scattered from the evaporation source has little influence on the microwave plasma source. The purpose is to provide a device.

[0005]

In order to achieve the above object, the present invention employs the following technical means. That is,
The present invention provides a hollow cylindrical body in which a chamber for accommodating a substrate and an evaporation source provided in the chamber for performing PVD processing on the substrate are provided, and a gas for a plasma source is introduced into the chamber. A microwave supply source for supplying microwaves from the outer peripheral side of the hollow cylinder is used to generate microwave plasma inside the hollow cylinder, and the microwave plasma is introduced into the chamber from the plasma discharge port on one end side in the longitudinal direction of the hollow cylinder. The plasma film forming apparatus is characterized in that a plasma source for supplying is provided.

With this structure, particles from the evaporation source can reach the vicinity of the plasma emission port but hardly reach the inside of the hollow cylindrical body. As a result, the micro can be escaped from the unwanted film due to the scattered particles of the plasma source. Further, it is preferable that a shielding member for preventing the film forming material scattered from the evaporation source from adhering to the vicinity of the plasma emission port is provided between the microwave plasma source and the evaporation source. If the shielding member is a shutter device that opens and closes the plasma emission port, the attachment of scattered particles can be controlled according to the process.

Further, it is provided with a table rotating in the chamber and a columnar body arranged coaxially with the table on the table, and the evaporation source and the plasma source are opposed to each other with the columnar body as a center. It is preferable that the pillar is configured to block the film forming material scattered from the evaporation source from going to the plasma emission port. By arranging the substrate around the pillar, the film formation by the evaporation source and the plasma source can be performed, and the film forming material scattered from the evaporation source can be shielded by the pillar, and the stable operation of the plasma source can be achieved.

If a shielding plate is provided which divides the inside of the chamber into the evaporation source side and the plasma source side, interference between the evaporation source and the plasma source is reduced. If the pressure of the space in the chamber divided into two by the shielding plate can be set separately, it is possible to cope with the difference in the optimum pressure between the process using the evaporation source and the process using the plasma source, and the optimum process can be obtained. It is preferable that the evaporation source and the plasma source are arranged such that the angle between the normal to the evaporation surface of the evaporation source and the axial direction of the hollow cylindrical body of the plasma source is within 90 degrees, With such an arrangement, the film-forming material emitted from each source is less likely to adhere to the other source.

Further, the evaporation source and the plasma source are arranged such that the direction normal to the evaporation surface of the evaporation source and the axial direction of the hollow cylindrical body of the plasma source are substantially parallel to each other or substantially 0 degrees. Is more preferable. Further, since the film-forming particles are less likely to fly behind the evaporation source, it is preferable that the plasma source is arranged behind the evaporation source. If the plasma source is arranged so that the hole provided at the substantially center of the evaporation source serves as the plasma emission port, the discharge of the evaporation source during the process can be activated by the plasma of the plasma source. .

Further, there is provided a transfer means for moving the substrate between an extension position in the radial direction with respect to the evaporation surface of the evaporation source and an extension position in the axial direction of the hollow cylindrical body of the plasma source. For example, the film can be formed substantially perpendicular to the substrate. If the process gas used during the film formation by the evaporation source is configured to be supplied from the hollow cylindrical body into the chamber, in the case of the film formation by the evaporation source and the process utilizing discharge, the plasma source Thus, the discharge state can be controlled by supplying the gas that has been activated in advance.

It is preferable to provide two exhaust systems, a low vacuum exhaust system for the plasma source and a high vacuum exhaust system for the evaporation source. Plasma source process,
Since the optimum pressure differs in the process using the evaporation source, and a large amount of dust may be discharged in the process using the plasma source, providing an exhaust system for each source facilitates maintenance in terms of cost. But it works. The chamber has an internal observation window part made of a material such as glass that allows microwaves to leak outside, and the internal observation window part prevents leakage of microwaves to the outside of the chamber. It is preferable to have a preventive means.

The window for internal observation is constructed as a cylindrical tube having a diameter smaller than the diameter of a waveguide having a cutoff frequency of microwave of 2.45 GHz, and the cylindrical tube is used to prevent leakage of microwaves in the window. It can be a means. Alternatively, the internal observation window portion is configured as a rectangular tube waveguide, and the length of the rectangular long side is made shorter than the length at which the microwave of 2.45 GHz is used as a cutoff frequency, and the rectangular tube is opened as a window. It can be used as a means for preventing microwave leakage of the part. After the substrate is pretreated with the plasma source, it is preferable that PVD film formation is controlled by the evaporation source.

If the pretreatment is CVD film formation, CVD
Both high-speed film-forming property and PVD film performance can be obtained. It is preferable that after the PVD film is formed on the substrate by the evaporation source, the CVD film is formed by the plasma source. By forming a PVD film such as a metal-based intermediate layer, which is difficult to form by CVD, and then forming a film at a high speed by CVD, both adhesion and high-speed film formability can be obtained. The PVD film is preferably a metal thin film. Further, it is preferable that the CVD film formation is a CVD containing a hydrocarbon.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a film forming apparatus 1 according to the first embodiment. The film forming apparatus 1 includes a vacuum chamber (vacuum container) 2 in which a substrate to be processed is housed, a plasma source 3 for generating plasma, and an evaporation source 4 for performing PVD processing on the substrate. . Specifically, the plasma source 3 is additionally mounted in the chamber 2 having the evaporation source 4.

The plasma source 3 is a microwave plasma source, and microwave plasma is generated by irradiating the gas with microwaves. The plasma source 3 includes a magnetron (microwave supply source) 6 for generating microwaves (2.45 GHz) which is an excitation source, a waveguide 7 formed in an annular shape, and an inside of the annular waveguide 7. It has the hollow cylinder 8 installed coaxially. Microwaves generated by the magnetron 6 are emitted from the slot antenna provided in the annular waveguide 7, and the hollow cylinder (quartz tube) 8 made of a material such as quartz that can transmit microwaves is inserted from the outer peripheral side to the hollow cylinder. Microwaves are supplied to the inside of the body 8 to generate microwave-excited plasma. The hollow cylindrical body 8 has a cylindrical shape.

The hollow cylindrical body 8 is located in the chamber 2 with one end side 9 in the longitudinal direction (axial direction) opened, and the opening at one end side in the longitudinal direction of the hollow cylindrical body 8 is a plasma discharge port 9. ing. Gas for a plasma source is introduced from the other end side in the longitudinal direction of the hollow cylindrical body 8. In addition, utilizing the hollow cylindrical body 8,
The process gas used during film formation by the evaporation source 4 can also be introduced into the chamber 2. That is, the hollow cylindrical body 8
Also serves as a supply unit for both the plasma source gas and the evaporation source gas.

The plasma emission port 9 of the hollow cylindrical body 8 is located at a position projecting inward with respect to the peripheral wall of the chamber 2, and when viewed from the emission port 9 inside the chamber 2, the annular waveguide 7 to the hollow cylindrical body are seen. The plasma generating part, which is a part into which the microwave is introduced, is located in the hollow cylindrical body 8. As a result, even if the particles from the evaporation source 4 can reach the vicinity of the discharge port 9, it is difficult to reach the plasma generating portion, and the plasma generating portion is escaped from the unnecessary film formed by the scattered particles from the evaporation source 4. You can

The evaporation source 4 uses plasma generated by arc discharge or glow discharge to evaporate the evaporation source material.
PVD film is formed on the substrate by ionization. The plasma source 3 and the evaporation source 4 are arranged so that the film-forming particles emitted from the plasma source 3 and the film-forming particles emitted from the evaporation source 4 are substantially orthogonal to each other. That is, the normal direction to the evaporation surface 4a of the evaporation source 4 (horizontal direction in FIG. 1) and the axial direction of the hollow cylindrical body 8 of the plasma source 3 (vertical direction in FIG. 1) are arranged at about 90 degrees. Has been done. The normal direction of the evaporation source 4 and the axial direction of the plasma source 3 indicate the average movement direction of particles jumping from each source.

More specifically, the plasma source 3 is installed in the upper part of the chamber 2 and the film-forming particles are emitted downward, and the evaporation source 4 is installed in the side wall of the chamber 2 to form the film-forming particles in the lateral direction. Is released. With such an arrangement, film-forming particles emitted from the evaporation source 4 and film-forming particles emitted from the plasma source 3 are less likely to form a film on the other sources 3 and 4. Moreover, according to this arrangement, it is possible to more effectively prevent particles from the evaporation source 4 from reaching the plasma generating portion from the discharge port 9 of the hollow cylindrical body 8.

The process gas used during film formation by the evaporation source 4 is supplied into the chamber 2 through the hollow cylindrical body 8 of the plasma source 3. In the film formation by the evaporation source 4, particularly in a process utilizing vacuum discharge such as arc ion plating or sputtering, the discharge state can be controlled by supplying the process gas previously activated by the plasma source 3. In particular, the effect of enhancing discharge plasma can be expected, which is effective for the film forming rate and film forming quality. The chamber 2 is provided with an exhaust port 11, and as shown in FIG. 2, the exhaust port 11 has a low vacuum exhaust system (vacuum pump) 13 for the plasma source 3 and a high vacuum source for the evaporation source 4. Two exhaust systems of a vacuum exhaust system (vacuum pump) 14 are connected.

The operating pressure of the plasma source 3 is 1 [Pa] or higher, while the process by the evaporation source 3 is 1 [P].
a] As described below, there are differences in the optimum operating pressures of the plasma source 3 and the evaporation source 4. In addition, a gas such as Ar is used in the process by the evaporation source 4, and the dust in the exhaust gas is relatively small, while chlorine or oxygen is used as a plasma source gas in operating the plasma source 3. When corrosive gas is used or a process such as a CVD process is performed, a large amount of dust such as SiOx is generated, and a process for discharging the dust is also required.

As described above, the specifications required for the exhaust system differ when the evaporation source 4 is used and when the plasma source 3 is used. Therefore, if the same exhaust system as when using the evaporation source 4 is used when using the plasma source 3, maintenance becomes difficult and pressure control becomes difficult. As described above, by providing the exhaust system 13 for the plasma source 3 and the exhaust system 14 for the evaporation source 4 and using those suitable for each operation, ease of maintenance and ease of pressure control are ensured. . Also, the cost can be reduced. A dry pump is recommended as the pump used in the exhaust system 13 for the plasma source, and a rotary, turbo, etc. is recommended as the pump used in the exhaust system 14 for the evaporation source.

As shown in FIG. 3, an internal observation window portion 16 is provided on the side wall of the chamber 2. The internal observation window portion 16 is for observing the inside of the chamber 2 from the outside of the chamber 2, and is configured as a glass window. However, since glass transmits high frequencies such as microwaves, microwaves may leak from the internal observation window 16. As a countermeasure against this, the window portion 16 is provided with a leakage prevention means 17 for preventing the leakage of microwaves. In FIG. 3, a metal mesh is attached to the window portion 16 as the leakage prevention means 17, but as the leakage prevention means 17, other materials that can short-circuit the electric field of the microwave can be used. A transparent conductive film can also be adopted.

FIG. 4 shows a modified example of the window portion 16, that is, the window portion 1
If a metal mesh 17 or the like is attached to 6, it will be difficult to observe the inside. Therefore, a cylindrical waveguide is provided to prevent microwave leakage, and this is used as a window 16 that also serves as microwave leakage means. It was made. Specifically, in FIG. 4A, the cylindrical waveguide 20 is provided on the side wall of the chamber 2 and the window 1
In FIG. 4B, the rectangular tube waveguide 21 is provided on the side wall of the chamber 2 to form the window 16.

In the cylindrical waveguide 20 having a vacuum inside, the cutoff wavelength λc = 2 × π × r / k (λc = cutoff wavelength, r = radius of waveguide, k = mode of electromagnetic field, TE01 = 3 .83,
TE11 has 1.84), and has a property that a high frequency wave having a wavelength longer than the wavelength indicated by λc cannot pass through the waveguide 20. By utilizing this property, a cylindrical waveguide 20 having a radius r that cuts off microwaves is installed and used as the window portion 16, so that even if there is a glass window,
A window with less microwave leakage can be realized. Moreover, since it is not necessary to provide a metal mesh or the like, it is easy to observe the inside.

Also in the rectangular tube waveguide 21, there is a cutoff wavelength, λc = 2a (λc = cutoff wavelength, a = long side length of rectangle), and a high frequency having a wavelength longer than the wavelength indicated by λc. Does not pass through the inside of the waveguide 21, and by using this as the window portion 16, it is possible to prevent microwave leakage similarly to the cylindrical waveguide 20. The inside of the hollow cylinder or rectangular tube may be vacuum or atmospheric pressure. Further, transparent glass or a dielectric material may be used, but it is necessary to consider the difference in cutoff frequency due to the difference with the dielectric constant of microwaves.

FIG. 5 shows a film forming apparatus 1 according to the second embodiment. In the second embodiment, the shielding member 25 is provided between the plasma source 3 and the evaporation source 4. The shielding member 25 is for positively preventing the film forming material scattered from the evaporation source 4 from adhering to the emission port 9 of the plasma source 3, and is provided so as to hang down from the upper portion of the chamber 2. . By providing the shielding member 25, a more stable process can be supplied. Note that the description of the second embodiment is omitted, which is the same as that of the first embodiment.

FIG. 6 shows a film forming apparatus 1 according to the third embodiment. In the third embodiment, the shielding member is configured as a shutter device 26 that opens and closes the plasma emission port 9. The shutter device 26 is configured to include a shutter body 27 that opens and closes the discharge port 9 and a drive device 28 that drives the shutter body 27 to open and close. By making the shield member movable so that it can be opened and closed, the shutter is opened when processing is performed by the plasma source 3, and the shutter is closed when processing is performed using the evaporation source 4,
The attachment of scattered particles can be controlled according to the process. The shutter device is not only a plasma source but also an evaporation source 3
It can be installed in front of, and more than one may be installed.

The description of the third embodiment is omitted as in the first embodiment. 7 and 8 show
The film-forming apparatus 1 which concerns on 4th Embodiment is shown. This 4th
In the embodiment, a rotation table 31 having a rotation shaft coaxial with the chamber 2 is provided in the chamber 2, and a cylindrical cylindrical body 32 is erected on the rotation table 31 coaxially. Further, the plasma source 3 is disposed on the side wall of the chamber 2,
The evaporation source 4 and the plasma source 3 are arranged so as to face each other with the cylindrical body 32 as the center.

The rotation table 31 is rotationally driven by a driving device (not shown), and samples (substrates) 34a and 34b are arranged on the rotation table 31 which rotates to surround the cylindrical body 32.
By arranging, the film formation by the evaporation source 4 and the plasma source 3
The plasma process by can be repeatedly performed continuously or intermittently. In the illustrated state, the sample 34a is subjected to film formation by the evaporation source 4, and the sample 34b
Is being formed by the plasma source 3. The film may be formed while rotating the rotation table 31,
During the film formation, the rotation table 31 may be stopped to form the film, and the film may be rotated if necessary.

If the rotation table 31 is rotated at a high speed,
The processing by the evaporation source 4 and the plasma source 3 can be precisely mixed. Further, the cylindrical body 32 functions as a shielding member,
Since the film forming material scattered from the evaporation source 4 is shielded by the cylindrical body 32, stable operation of the plasma source can be realized. on the other hand,
By rotating the rotation table, the samples 34a and 34b can freely move between the processing region by the evaporation source and the processing region by the plasma source. In this embodiment,
Although the cylindrical body 32 erected on the table 31 is used, the present invention is not limited to this, and a solid cylindrical body or a wall pillar may be used instead of the cylindrical body. Also, a pillar hanging from the chamber ceiling may be used.

The description of the fourth embodiment is omitted as in the first embodiment. 9 and 10
Shows the film forming apparatus 1 according to the fifth embodiment. The fifth embodiment is different from the film forming apparatus 1 of the fourth embodiment in that
A shield plate (shield plate) 36 that divides the inside of the chamber 2 into an evaporation source 4 side and a plasma source 3 side is provided. The shield plate 36 is provided so as to avoid the cylindrical body 32.
By dividing the chamber 2 into the evaporation source 4 side and the plasma source 3 side, interference between the evaporation source 4 and the plasma source is reduced. It is preferable that the gap between the shield plate 36 and the chamber 2 is as small as possible, but it is determined in consideration of the exhaust speed and the like.

The film forming apparatus 1 of the fifth embodiment is most suitable for a roll coater or the like in which a cylindrical body 32 is installed as a substrate, the surface of the cylindrical body 32 is coated, and a sheet is wound around the cylindrical body 32 to form a film. is there. As described above, it is better to perform the process using the evaporation source 4 and the process using the plasma source 3 under different pressure conditions. Therefore, the pressure is set separately for each space of the chamber 2 divided into two. It is possible. That is, the space on the evaporation source 4 side of the chamber 2,
A dedicated exhaust system is connected to each space on the plasma source 3 side. As a result, the evaporation source 4 and the plasma source 3 can be operated at pressures optimal for their respective operations, and the likelihood of setting process conditions can be increased.

As the exhaust system, an exhaust duct for vacuuming may be provided on the evaporation source side, and the plasma source side may be exhausted through the evaporation source side. The description of the fifth embodiment is omitted as in the first embodiment. Figure 11
Shows the film forming apparatus 1 according to the sixth embodiment. The sixth embodiment shows a modification of the arrangement of the plasma source 3 and the evaporation source 4, in which the evaporation source 4 is provided above the chamber 2 and the plasma source 3 is provided at the side wall of the chamber 2.
Also in the sixth embodiment, as in the first embodiment, the normal direction (vertical direction) of the evaporation surface 4a of the evaporation source 4 and the axial direction (horizontal direction) of the hollow cylindrical body 8 of the plasma source 3 are approximately equal to each other. The angle is 90 degrees, and there is no problem that the sources 3 and 4 form films on the other side.

The angle of intersection between the normal direction of the evaporation source 4 and the axial direction of the plasma source 3 can be not only 90 degrees but also 90 degrees or less. By setting it to 90 degrees or less, the unnecessary coating film can be further formed. It can be avoided. Note that the description of the sixth embodiment is omitted, which is the same as that of the first embodiment. FIG. 12 shows a film forming apparatus 1 according to the seventh embodiment.
In the seventh embodiment, the plasma source 3 and the evaporation source 4 are
Both of them are attached to the same surface of the chamber 2 so that the scattering directions (movement directions) of particles are directed in the same direction. Specifically, the plasma source 3 and the evaporation source 4 are attached to the upper part of the chamber 2. The axial direction of the plasma source 3 (vertical direction) and the normal direction of the evaporation source 4 (vertical direction) are parallel (0
Degree).

Therefore, particles from the evaporation source 4 are less likely to adhere to the plasma source 3, and conversely particles from the plasma source are less likely to adhere to the evaporation source 4. Further, due to conditions such as sufficiently low pressure, cross-contamination between particles can be reduced when the particles have a strong straight traveling property. Note that the description of the seventh embodiment is omitted, which is the same as that of the first embodiment. FIG. 13 shows a film forming apparatus 1 according to the eighth embodiment. In the eighth embodiment, as in the seventh embodiment, the plasma source 3 and the evaporation source 4 are mounted on the same surface of the chamber 2 although the directions of particle scattering are directed in the same direction. Instead, they are attached to surfaces 2a and 2b parallel to each other on the upper portion of the chamber 2. Even with such an attachment method, the same operation as that of the seventh embodiment can be obtained.

In addition, the surface 2b on which the plasma source 3 is attached is located behind the surface 2a on which the evaporation surface 4 is attached, and the plasma source 3 is located behind the evaporation source 4.
Is located, it is difficult for the vaporized particles to fly to the rear of the vaporization source 4, and it is possible to further prevent the film deposition particles of the vaporization source 4 from adhering to the plasma source 3. The description of the eighth embodiment is the same as that of the first embodiment except that the description is omitted.
FIG. 14 shows a film forming apparatus 1 according to the ninth embodiment. In the ninth embodiment, a hole 40 is formed at a substantially central position of the evaporation source (target cathode) 4, and the plasma source 3 is formed so that the hole 40 serves as the discharge port 9 of the hollow cylindrical body 8 of the plasma source 3. Is provided. As a result, in arc ion plating or sputtering using arc discharge or glow discharge, the discharge can be activated by the plasma of the plasma source 3.

The ninth embodiment is the same as the first and seventh embodiments in that the description is omitted. Figure 15
Shows the film forming apparatus 1 according to the tenth embodiment. In the tenth embodiment, a transfer device (transfer means) 46 for moving the substrate 45 is provided in the chamber 2 of the film forming apparatus 1 of the seventh embodiment. The transfer device 46 is provided below the plasma source 3 and the evaporation source 4, and the substrate 45
Can be moved directly below the plasma source 3 (extended position in the axial direction) and directly below the evaporation source 4 (extended position in the normal direction).

The conveying device 46 is an endless belt 4 that can rotate.
7 illustrates the case where 7 is rotated by rollers 48 and 48, and the substrate 45 is moved by the belt 47, but the substrate 45 is held and moved between the position directly below the plasma source 3 and the position directly below the evaporation source 4. The specific structure is not limited as long as it is capable of moving, and may be, for example, a moving stage such as a linear stage that performs a linear motion rather than a circular motion. Further, the transfer device 46 is configured so that the substrate 45 moves in parallel with the upper part of the chamber 2 and moves while keeping the interval between the plasma source 3 and the evaporation source 4 constant. Is preferred for.

Further, the transfer device 46 includes a substrate 45, a source 3,
If a mechanism for adjusting the distance between the vapor source 4 and the plasma source 3 is provided, film forming conditions suitable for the evaporation source 4 and the plasma source 3 can be obtained. As a mechanism for adjusting the distance between the substrate 45 and the sources 3 and 4, in the case of FIG. 15, an elevating mechanism that moves up and down may be provided. Furthermore, if a means for loading the substrate 45 from the outside of the chamber 2 and a means for discharging the substrate to the outside of the chamber 2 are provided as the transfer device 46, an in-line type continuous processing device can be provided, and the productivity can be improved. it can.

The description of the tenth embodiment is omitted as in the first and seventh embodiments. Less than,
Some film forming methods using the film forming apparatus 1 of each of the above embodiments will be described. As a first film forming method, the plasma source 3 is used for pretreatment of the substrate, and then the evaporation source 4 is used for PV.
D film formation can be performed. In the plasma source 3, for example, as a pretreatment, a cleaning process of irradiating the substrate with activated Ar ions to a substrate is performed by microwave excitation of Ar gas or the like to generate plasma, or an oxygen gas is microwave excited. It is possible to generate oxygen activated by (2) to remove hydrocarbons on the surface of the sample (substrate). The gas used for this pretreatment is supplied from the hollow tube 8.

Before the film formation by the evaporation source 3 (PVD film formation), a surface treatment called a bombard, which is a kind of sputtering, is generally applied, and the plasma source 3 performs a treatment in place of this bombardment. Is what you are trying to do. In the case of the conventional bombardment, the application of a high bias voltage has a harmful effect on the sample (substrate) surface, but by applying the bombarding using the plasma source 3 of the present apparatus 1, it is applied to the sample. Surface modification with little damage is possible.

By changing the microwave power of the plasma source, the plasma activity can be adjusted, and the controllability of the bombardment is enhanced. In addition, as the second film forming method,
A CVD film forming process can be performed as the pretreatment using the plasma source 3. As a pretreatment, a film is formed by a CVD process, and at the end of the film formation, P using the evaporation source 4 is used.
By forming a film by VD, the surface is P
It is possible to form a laminated film, which is a VD film and a deep layer, which is a CVD film, on the substrate.

Since CVD is a chemical reaction in the vapor phase to form a film, impurities are often mixed during the chemical reaction. For example, in DLC, it is well known that hydrogen H is mixed in carbon C. For this reason, it is difficult to form a pure single element composition in CVD, and CVD is not suitable when a film having such a pure composition is required. On the other hand, CVD is characterized by a higher film formation rate and higher productivity than PVD. With the laminated film as shown in FIG. 16, both high productivity of CVD and film quality of PVD can be obtained. That is, by forming a base film at a high speed by CVD and forming a PVD film on the outermost surface, high productivity of CVD and film quality of PVD can be obtained.

In order to collectively form such a film by CVD and a film by PVD, it is necessary to perform CVD film formation and PVD film formation in the same chamber. According to the present apparatus 1, this can be easily performed. Controlled by. The third film forming method is a method of forming a PVD film by the evaporation source 4 and then forming a CVD film by the plasma source 3. A method of forming a kind of binder layer called an intermediate layer between a substrate and a film for the purpose of improving the adhesion of the film is known. Especially DLC
In the film formation, it is known that a metal such as W or Cr is formed on a substrate and a desired DLC or a film having a mixed composition of DLC and W or Cr is formed thereon.

On the other hand, the film formation of DLC is performed by using a plasma source for C
Although it is possible to form a film by VD, CVD is difficult to form this metal-based intermediate layer and is not often used. This is C containing a metallic element having a relatively large atomic number such as W or Cr.
This is because VD gas is not industrially produced and impurities are mixed in by the CVD reaction.
As shown in FIG. 17, by forming a metal-based intermediate layer or the like by PVD and then performing high-speed film-forming by CVD, both adhesion and high-speed film-forming property can be obtained. The PVD film serving as the intermediate layer is preferably a metal thin film of W, Cr, Ti or the like. The CVD film is preferably a CVD film containing hydrocarbon,
Specifically, it can be a DLC coating by CVD. Methane or acetylene is used as the hydrocarbon of the raw material gas for the DLC coating. Further, mixed gas of methane or acetylene with an inert gas such as argon or helium or a gas such as nitrogen or hydrogen may be used.

In order to collectively form such a film by CVD and a film by PVD, CVD film formation and PVD film formation should be performed in the same chamber, and according to the present apparatus 1, this can be easily performed. Controlled by. Further, if the DLC film is formed by PVD after the high-speed film formation of DLC film by CVD, only the surface can have the PVD film quality. The present invention is not limited to the above embodiment.

[0048]

According to the present invention, a microwave supply source for supplying microwaves from the outer peripheral side of the hollow cylindrical body into which the gas for the plasma source is introduced is provided, and the microwave inside the hollow cylindrical body is also provided. Since a plasma source that generates plasma and supplies microwave plasma into the chamber from the plasma emission port on one end side in the longitudinal direction of the hollow cylindrical body, particles from the evaporation source reach the vicinity of the plasma emission port. Even if it is possible, it is difficult to reach the back of the hollow cylinder. As a result, the micro can be escaped from the unnecessary film formed by the scattered particles of the plasma source, and the influence of the evaporation source on the plasma source can be reduced.

[Brief description of drawings]

FIG. 1 is a vertical sectional view of a film forming apparatus according to a first embodiment.

FIG. 2 is an exhaust system diagram of the film forming apparatus according to the first embodiment.

FIG. 3 is a side view of the chamber of the film forming apparatus according to the first embodiment.

FIG. 4 is a perspective view showing a modified example of a window portion for internal observation.

FIG. 5 is a vertical sectional view of a film forming apparatus according to a second embodiment.

FIG. 6 is a side view showing a shutter device of a film forming apparatus according to a third embodiment.

FIG. 7 is a cross-sectional view of a film forming apparatus according to a fourth embodiment.

FIG. 8 is a vertical sectional view of a film forming apparatus according to a fourth embodiment.

FIG. 9 is a cross-sectional view of a film forming apparatus according to a fifth embodiment.

FIG. 10 is a vertical sectional view of a film forming apparatus according to a fifth embodiment.

FIG. 11 is a vertical sectional view of a film forming apparatus according to a sixth embodiment.

FIG. 12 is a vertical sectional view of a film forming apparatus according to a seventh embodiment.

FIG. 13 is a vertical sectional view of a film forming apparatus according to an eighth embodiment.

FIG. 14 is a vertical sectional view of a film forming apparatus according to a ninth embodiment.

FIG. 15 is a vertical sectional view of a film forming apparatus according to a tenth embodiment.

FIG. 16 is a film cross-sectional view showing a film forming example.

FIG. 17 is a film cross-sectional view showing another film forming example.

[Explanation of symbols]

1 film deposition equipment 2 chamber 3 Plasma source 4 evaporation sources 4a Evaporation surface 8 hollow cylinder 9 Plasma outlet 13 Exhaust system for plasma source 14 Evaporation source exhaust system 16 Internal observation window 17 metal mesh 20 cylindrical waveguide 21 Rectangular tube waveguide 25 Shielding member 26 Shutter device 31 rotation table 32 cylinder 36 Shield 40 holes 46 transportation means

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Claims (21)

[Claims] 1. A hollow cylinder in which a chamber for housing a substrate and an evaporation source provided in the chamber for performing a PVD process on the substrate are provided, and a gas for a plasma source is introduced therein. A microwave supply source for supplying microwaves from the outer peripheral side of the body is provided, and microwave plasma is generated inside the hollow cylindrical body, and microwaves are introduced into the chamber from the plasma emission port on one end side in the longitudinal direction of the hollow cylindrical body. A plasma film forming apparatus comprising a plasma source for supplying plasma. 2. A shielding member is provided between the microwave plasma source and the evaporation source to prevent the film forming material scattered from the evaporation source from adhering to the vicinity of the plasma emission port. The plasma film forming apparatus according to claim 1, which is characterized in that. 3. The shutter device for opening and closing the plasma emission port, wherein the shielding member is a shutter device.
The plasma film forming apparatus described. 4. A table which rotates in a chamber and a columnar body which is coaxially arranged on the table and which is arranged on the table. The evaporation source and the plasma source are arranged opposite to each other with the cylindrical body as a center. The plasma formation according to any one of claims 1 to 3, wherein the columnar body is configured to block the film forming material scattered from the evaporation source from heading toward the plasma emission port. Membrane device. 5. The plasma film forming apparatus according to claim 1, further comprising a shield plate that divides the interior of the chamber into the evaporation source side and the plasma source side. 6. The plasma film forming apparatus according to claim 5, wherein the pressure of the space in the chamber divided into two by the shielding plate can be set separately. 7. The angle between the normal to the evaporation surface of the evaporation source and the axial direction of the hollow cylindrical body of the plasma source is 9
2. The plasma film forming apparatus according to claim 1, wherein the evaporation source and the plasma source are arranged so as to be within 0 degree. 8. The evaporation source and the plasma source are arranged such that a direction normal to the evaporation surface of the evaporation source and an axial direction of the hollow cylindrical body of the plasma source are substantially parallel to each other or substantially 0 degrees. The plasma film forming apparatus according to claim 1, wherein the plasma film forming apparatus is provided. 9. The plasma film forming apparatus according to claim 8, wherein the plasma source is disposed behind the evaporation source. 10. The plasma film forming apparatus according to claim 8, wherein the plasma source is arranged such that a hole provided substantially in the center of the evaporation source serves as the plasma emission port. 11. A transfer means is provided for moving the substrate between an extension position in the radial direction of the evaporation surface of the evaporation source and an extension position in the axial direction of the hollow cylindrical body of the plasma source. 9. The plasma film forming apparatus according to claim 8, wherein. 12. The method according to claim 1, wherein the process gas used during film formation by the evaporation source is supplied from the hollow cylindrical body into the chamber.
11. The plasma film forming apparatus according to any one of 11. 13. A low vacuum exhaust system for the plasma source,
13. The plasma film forming apparatus according to claim 1, further comprising two exhaust systems of a high vacuum exhaust system for the evaporation source. 14. The chamber has an internal observation window part made of a material such as glass capable of leaking microwaves to the outside, and the internal observation window part leaks microwaves to the outside of the chamber. 14. The plasma film forming apparatus according to claim 1, further comprising a leakage prevention unit for preventing such a situation. 15. The internal observation window is 2.45 GH.
The plasma film forming apparatus according to claim 14, wherein the plasma film forming apparatus is configured as a cylindrical tube having a cut-off frequency of the microwave of z, and the cylindrical tube serves as a microwave leakage preventing means. 16. The inside observation window portion is configured as a rectangular hollow tube, and the length of the long side of the rectangle is made shorter than the length at which the microwave of 2.45 GHz is used as a cutoff frequency, and 15. The plasma film forming apparatus according to claim 14, wherein the hollow tube is used as a microwave leakage preventing means. 17. The plasma process according to claim 1, wherein PVD film formation is controlled by the evaporation source after pretreatment of the substrate with the plasma source. Membrane device. 18. The plasma film forming apparatus according to claim 17, wherein the pretreatment is CVD film forming. 19. The control according to claim 1, wherein after the PVD film is formed on the substrate by the evaporation source, the CVD film is formed by the plasma source. Plasma deposition system. 20. The plasma film forming apparatus according to claim 19, wherein the PVD film is a metal thin film. 21. The CVD film formation is a CV containing hydrocarbon.
21. The plasma film forming apparatus according to claim 19 or 20, wherein the plasma film forming apparatus is D.