JP2003101000A - Solid state image sensor - Google Patents
Solid state image sensorInfo
- Publication number
- JP2003101000A JP2003101000A JP2001290058A JP2001290058A JP2003101000A JP 2003101000 A JP2003101000 A JP 2003101000A JP 2001290058 A JP2001290058 A JP 2001290058A JP 2001290058 A JP2001290058 A JP 2001290058A JP 2003101000 A JP2003101000 A JP 2003101000A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- signal processing
- image pickup
- substrate
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title 1
- 125000006850 spacer group Chemical group 0.000 claims abstract description 29
- 238000003384 imaging method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 36
- 230000002093 peripheral effect Effects 0.000 claims description 33
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000027455 binding Effects 0.000 description 1
- 238000009739 binding Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Wire Bonding (AREA)
- Die Bonding (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Studio Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、固体撮像素子と信
号処理素子とを順次積層状態に配置した構造を有する固
体撮像装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device having a structure in which a solid-state image pickup element and a signal processing element are sequentially stacked.
【０００２】[0002]
【従来の技術】図２は、従来の固体撮像装置を示す断面
図である。2. Description of the Related Art FIG. 2 is a sectional view showing a conventional solid-state image pickup device.
【０００３】この固体撮像装置１は、セラミックまたは
樹脂により形成されたフレキシブル基板等の平板状の基
板２を有している。この基板２の略中央部には、パッケ
ージングにより平板状に形成された信号処理素子３が載
置され、信号処理素子３の基板２に接する裏面に接着剤
が塗布されて基板２の表面に固定されている。信号処理
素子３の上面には、ガラス封止により平板状に形成され
た撮像素子４が載置され、撮像素子４の信号処理素子３
に接する裏面に接着剤が塗布されて信号処理素子３の表
面上に固定されている。This solid-state image pickup device 1 has a flat substrate 2 such as a flexible substrate formed of ceramic or resin. A signal processing element 3 formed in a flat plate shape by packaging is placed at a substantially central portion of the substrate 2, and an adhesive is applied to the back surface of the signal processing element 3 which is in contact with the substrate 2 so that the front surface of the substrate 2 is covered. It is fixed. On the upper surface of the signal processing element 3, an image pickup element 4 formed in a flat plate shape by glass sealing is placed, and the signal processing element 3 of the image pickup element 4 is mounted.
An adhesive is applied to the back surface of the signal processing element 3 that is in contact with the signal processing element 3 and is fixed on the front surface of the signal processing element 3.
【０００４】信号処理素子３及び撮像素子４が配置され
た基板２上には、下面が開放された中空のケース本体５
が載置されて、信号処理素子３及び撮像素子４の側面及
び上面を覆っている。このケース本体５は、その下端面
が接着剤によって基板２の周縁部に固定されている。ケ
ース本体５の上面には、信号処理素子３及び撮像素子４
が設けられた基板２の略中央部分に対向して、開口５ａ
が形成されており、この開口５ａの周縁には、上部に所
定の高さに突出するフランジ５ｂが設けられている。ま
た、ケース本体５の上面に形成された開口５ａには、こ
の開口５ａを閉塞する平板状のフィルター６によって閉
塞されており、信号処理素子３及び撮像素子４が配置さ
れたケース本体２の内部を密閉状態にしている。上部に
突出するフランジ５ｂの上端部には、このフランジ５ｂ
の上端部を覆うレンズ保持具７が設けられており、この
レンズ保持具７の略中央部に、ケース本体５内に配置さ
れた撮像素子４に光を集光するレンズ８が保持されてい
る。また、ケース本体５内の信号処理素子４等が配置さ
れた中央部分に隣接する周辺部分には、制御装置等の周
辺回路９が配置されている。On the substrate 2 on which the signal processing element 3 and the image pickup element 4 are arranged, a hollow case body 5 having an open lower surface is provided.
Are placed to cover the side surface and the upper surface of the signal processing element 3 and the image pickup element 4. The lower end surface of the case body 5 is fixed to the peripheral portion of the substrate 2 with an adhesive. The signal processing element 3 and the imaging element 4 are provided on the upper surface of the case body 5.
Facing the substantially central portion of the substrate 2 provided with the opening 5a.
Is formed, and a flange 5b projecting at a predetermined height is provided on the upper portion of the periphery of the opening 5a. Further, the opening 5a formed on the upper surface of the case body 5 is closed by a flat plate-shaped filter 6 that closes the opening 5a, and the inside of the case body 2 in which the signal processing element 3 and the image pickup element 4 are arranged. Is sealed. At the upper end of the flange 5b protruding upward, this flange 5b
A lens holder 7 that covers the upper end of the lens holder 7 is provided, and a lens 8 that collects light on the image pickup device 4 arranged in the case body 5 is held at a substantially central portion of the lens holder 7. . Further, a peripheral circuit 9 such as a control device is arranged in the peripheral portion of the case body 5 adjacent to the central portion where the signal processing element 4 and the like are arranged.
【０００５】この固体撮像装置１は、基板２上に順番に
設けられた信号処理素子３及び撮像素子４に内蔵される
それぞれの内蔵回路素子と、ケース本体５内の周辺部に
設けられた周辺回路９とをワイヤーＷで接続するワイヤ
ー方式のスタックド構造を有しており、信号処理素子３
及び撮像素子４のそれぞれの側周部は、周辺回路９に接
続されたワイヤＷを接続するためのワイヤボンド領域３
ａ及び４ａとなっている。このワイヤボンド領域３ａ及
び４ａには、図示しない複数のパッドが設けられてお
り、各パッドにワイヤＷが接着されて、周辺回路９と導
通するようになっている。This solid-state image pickup device 1 includes respective built-in circuit elements built in the signal processing element 3 and the image pickup element 4, which are sequentially provided on the substrate 2, and a peripheral portion provided in the peripheral portion of the case body 5. The signal processing element 3 has a wire-type stacked structure in which the circuit 9 is connected by a wire W.
The side peripheral portions of the image pickup device 4 and the wire bond region 3 for connecting the wires W connected to the peripheral circuit 9 are also provided.
a and 4a. A plurality of pads (not shown) are provided in the wire bond regions 3a and 4a, and the wire W is bonded to each pad so as to be electrically connected to the peripheral circuit 9.
【０００６】また、図３には、米国特許５２９１０６１
号において開示されたデバイス構造１０を説明する断面
図が示されている。Further, in FIG. 3, US Pat. No. 5,291,061 is used.
A cross-sectional view illustrating the device structure 10 disclosed in No. 1 is shown.
【０００７】このデバイス１０は、複数の素子１１が基
板１２上に多層に積層して配置された構造を有してお
り、各素子１１間には、それぞれの素子１１を両面接着
して固定する接着層１３がそれぞれ介在されている。This device 10 has a structure in which a plurality of elements 11 are laminated and arranged on a substrate 12, and each element 11 is fixed between the elements 11 by double-sided adhesion. The adhesive layers 13 are respectively interposed.
【０００８】基板１２上に多層に積層された各素子１１
の周縁部分は、ワイヤボンド領域１１ａとされ、このワ
イヤボンド領域１１ａには、各素子１１に内蔵された回
路素子に接続された複数のボンディングパッド（図示せ
ず）が周縁に沿って所定間隔毎に配列されている。Each element 11 laminated in multiple layers on the substrate 12
The wire bonding region 11a has a peripheral edge portion thereof, and in the wire bond region 11a, a plurality of bonding pads (not shown) connected to the circuit elements built in each element 11 are arranged at predetermined intervals along the periphery. Are arranged in.
【０００９】各素子１１が多層に積層された基板１２に
隣接して、図示しない外部に設けられた回路部に接続さ
れた外部接続端子１４が設けられており、この外部接続
端子１４と、基板１２上に多層に形成された各素子１１
とは、一端が外部接続端子１４に接続されたワイヤＷの
他端を各素子１１のワイヤボンド領域１１ａに形成され
たボンディングパッドに接続することにより電気的に接
続されている。An external connection terminal 14 connected to an externally provided circuit portion (not shown) is provided adjacent to a substrate 12 in which each element 11 is laminated in multiple layers. The external connection terminal 14 and the substrate are provided. Each element 11 formed in multiple layers on 12
Are electrically connected by connecting the other end of the wire W whose one end is connected to the external connection terminal 14 to the bonding pad formed in the wire bond region 11a of each element 11.
【００１０】基板１２上に多層に積層された各素子１１
の間には、各素子１１を接着する接着層１３が設けられ
ており、各素子１１間の周辺部には、接着層１３の厚み
によって所定の空間が形成されている。各素子１１のボ
ンディング領域１１ａに形成された各ボンディングパッ
ドとワイヤＷの他端との電気的接続は、各素子１１間に
形成された空間を利用して、極めて小さなループを形成
するワイヤを使用したワイヤボンドによって行われる。Each element 11 laminated in multiple layers on the substrate 12
An adhesive layer 13 for adhering each element 11 is provided between them, and a predetermined space is formed by the thickness of the adhesive layer 13 in the peripheral portion between each element 11. The electrical connection between each bonding pad formed in the bonding region 11a of each element 11 and the other end of the wire W uses a wire forming an extremely small loop by utilizing the space formed between the elements 11. It is performed by wire bonding.
【００１１】[0011]
【発明が解決しようとする課題】図２に示す従来の固体
撮像装置１では、信号処理素子３及び撮像素子４のそれ
ぞれの周縁部に、ワイヤＷを接続するためのボンディン
グ領域３ａ及び４ａを形成しており、下層に設けられた
信号処理素子３は、ボンディング領域３ａを形成するた
めの面積を確保するために、上層の撮像素子４より大き
な面積に形成する必要がある。In the conventional solid-state image pickup device 1 shown in FIG. 2, bonding regions 3a and 4a for connecting the wires W are formed on the peripheral portions of the signal processing element 3 and the image pickup element 4, respectively. Therefore, the signal processing element 3 provided in the lower layer needs to be formed in a larger area than the imaging element 4 in the upper layer in order to secure an area for forming the bonding region 3a.
【００１２】このため、下層に設けられた信号処理素子
３の面積は、上層の撮像素子４の面積によって規定さ
れ、下層の信号処理素子３の面積が不必要に大きく構成
され、信号処理素子３が大型化するおそれがある。信号
処理素子３が大型化すると、信号処理素子３に対するコ
ストが上昇し、また、固体撮像装置１自体が大型化する
という問題がある。Therefore, the area of the signal processing element 3 provided in the lower layer is defined by the area of the image pickup element 4 in the upper layer, and the area of the signal processing element 3 in the lower layer is unnecessarily large. May increase in size. When the signal processing element 3 becomes large, the cost for the signal processing element 3 rises, and the solid-state imaging device 1 itself becomes large.
【００１３】特に、上層の撮像素子４がＣＭＯＳイメー
ジセンサーもしくはＣＣＤ等である場合には、撮像素子
４が通常のメモリー、マイコン素子等である場合とは異
なり、積層順序を変更して、撮像素子４の上に信号処理
素子３を積層する構成とすることができない。このた
め、撮像素子４の大型化に伴って信号処理素子３が大型
化するという問題を積層順序を変更することによって解
消することができない。In particular, when the upper layer image pickup device 4 is a CMOS image sensor, CCD or the like, unlike the case where the image pickup device 4 is a normal memory, a microcomputer device, etc., the stacking order is changed to change the image pickup device. The signal processing element 3 cannot be stacked on the signal processing element 4. Therefore, it is impossible to solve the problem that the signal processing element 3 becomes large as the image pickup element 4 becomes large by changing the stacking order.
【００１４】これに対して、図３に示すように、各素子
１１を多層に積層した構造を有するデバイス１０では、
各素子１１間に介在される接着層１３によって形成され
る空間を利用して、各素子１１の周縁部に形成されたダ
イボンド領域１１ａにワイヤＷを接続しているため、こ
のデバイス１０の構造を図２に示す固体撮像装置１に適
用すれば、下層の信号処理素子３の面積を上層の撮像素
子４の面積よりも大きくとる必要がなく、デバイスが大
型化することを解消できる。On the other hand, as shown in FIG. 3, in the device 10 having a structure in which each element 11 is laminated in multiple layers,
Since the wire W is connected to the die bond region 11a formed in the peripheral portion of each element 11 using the space formed by the adhesive layer 13 interposed between each element 11, the structure of this device 10 is When applied to the solid-state imaging device 1 shown in FIG. 2, it is not necessary to make the area of the signal processing element 3 in the lower layer larger than the area of the imaging element 4 in the upper layer, and it is possible to prevent the device from becoming large.
【００１５】しかし、このデバイス構造１０では、各素
子１１間に介在される接着層１３が、押圧により変形し
て、延伸するおそれがあり、このため、各素子１１にワ
イヤＷを接着する際に、各素子１１に傾きが発生するお
それがある。この場合には、図２に示すケース本体５の
フランジ５ｂの上端に設けられたレンズ保持具７によっ
て保持されたレンズ８と、撮像素子４との間の距離にバ
ラツキが生じるおそれがある。However, in this device structure 10, the adhesive layer 13 interposed between the respective elements 11 may be deformed by the pressure and stretched. Therefore, when the wire W is bonded to the respective elements 11. The tilt of each element 11 may occur. In this case, the distance between the lens 8 held by the lens holder 7 provided on the upper end of the flange 5b of the case body 5 shown in FIG. 2 and the image sensor 4 may vary.
【００１６】このように撮像素子に傾きが生じ、また、
レンズ８と撮像素子４との間の距離にバラツキが生じた
場合、撮像素子４に受光される光の感度が低下するおそ
れがある。As described above, the image sensor is tilted, and
If the distance between the lens 8 and the image sensor 4 varies, the sensitivity of the light received by the image sensor 4 may decrease.
【００１７】本発明は、上記問題を解決するためになさ
れたものであり、大型化を防止することができ、且つ、
ワイヤボンディングにより素子の傾き、距離バラツキが
生じない固体撮像装置を提供することを目的とする。The present invention has been made to solve the above-mentioned problems, and can prevent an increase in size, and
An object of the present invention is to provide a solid-state image pickup device in which the element is not tilted and the distance is not varied by wire bonding.
【００１８】[0018]
【課題を解決するための手段】上記課題を解決するた
め、本発明の固体撮像装置は、基板上に接着剤により固
定された第一素子と、該第一素子上に接着剤によって固
定された第二素子と、該第一素子及び第二素子の周辺部
における基板上に配置された周辺回路部と、該第一素子
及び第二素子と該周辺回路部とを密閉状態にスタックド
実装により収納する中空の収納部材とを備え、該第一素
子及び第二素子のそれぞれの周縁部に、各素子に内蔵さ
れた回路素子に導通する複数の端子部が形成されたボン
ディング領域が形成されており、該周辺回路部と、該第
一素子及び第二素子のボンディング領域に設けられた端
子部とがワイヤによって接続された固体撮像装置であっ
て、基板上に配置された該第一素子と該第二素子との間
には、該第一素子のボンディング領域に形成された端子
部にワイヤを接続するために要する空間を形成する中間
スペーサが配置されていることを特徴とするものであ
る。In order to solve the above-mentioned problems, a solid-state image pickup device of the present invention comprises a first element fixed on a substrate with an adhesive and an adhesive fixed on the first element with an adhesive. The second element, the peripheral circuit section arranged on the substrate in the peripheral section of the first element and the second element, and the first element and the second element and the peripheral circuit section are housed in a sealed state by stacked mounting. And a hollow housing member for forming a bonding area in which a plurality of terminal portions that are electrically connected to the circuit elements built in each element are formed on the respective peripheral portions of the first element and the second element. A solid-state imaging device in which the peripheral circuit section and a terminal section provided in the bonding region of the first element and the second element are connected by a wire, and the first element arranged on a substrate and the Between the second element, the first element It is characterized in that the intermediate spacer forming a space required to connect the wire to the terminal portions formed in the bindings regions are arranged.
【００１９】上記本発明の固体撮像装置は、前記第１素
子が、前記第二素子と同程度の大きさ、または、前記第
二素子より大きく、前記ボンディング領域上に重なりが
生じる程度の大きさに形成されている場合に、好適に用
いることができる。In the solid-state image pickup device according to the present invention, the first element has the same size as the second element, or the second element has a size larger than that of the second element so that an overlap occurs on the bonding region. When it is formed in the above, it can be preferably used.
【００２０】上記本発明の固体撮像装置において、前記
中間スペーサは、シリコン、石英ガラス、ソーダガラ
ス、樹脂のいずれかによって形成されていることが好ま
しい。In the above solid-state image pickup device of the present invention, it is preferable that the intermediate spacer is formed of any one of silicon, quartz glass, soda glass, and resin.
【００２１】上記本発明の固体撮像装置において、前記
第一素子は信号処理素子であり、前記第二素子は撮像素
子であることが好ましい。In the above solid-state image pickup device of the present invention, it is preferable that the first element is a signal processing element and the second element is an image pickup element.
【００２２】上記本発明の固体撮像装置において、前記
撮像素子は、ＣＭＯＳイメージセンサーまたはＣＣＤで
あることが好ましい。In the above solid-state image pickup device of the present invention, it is preferable that the image pickup element is a CMOS image sensor or a CCD.
【００２３】上記本発明の固体撮像装置において、前記
基板と前記第一素子、該第一素子と前記中間スペーサ、
及び該中間スペーサと該第二素子は、ダイボンドシート
または無銀ペーストによってそれぞれ接着されているこ
とが好ましい。In the above solid-state image pickup device of the present invention, the substrate and the first element, the first element and the intermediate spacer,
It is preferable that the intermediate spacer and the second element are bonded to each other by a die bond sheet or a silver-free paste.
【００２４】[0024]
【発明の実施の形態】図１は、本発明の固体撮像装置を
示す断面図である。FIG. 1 is a sectional view showing a solid-state image pickup device of the present invention.
【００２５】この固体撮像装置２０は、セラミックまた
は樹脂により形成されたフレキシブル基板等の平板状の
基板２を有している。この基板２の略中央部には、パッ
ケージングにより平板状に形成された信号処理素子（第
一素子）３が載置され、ダイボンドペーストを用いた接
着により基板２の表面に固定されている。The solid-state image pickup device 20 has a flat substrate 2 such as a flexible substrate formed of ceramic or resin. A signal processing element (first element) 3 formed in a flat plate shape by packaging is placed on a substantially central portion of the substrate 2 and fixed to the surface of the substrate 2 by adhesion using a die bond paste.
【００２６】この信号処理素子３の上には、平板状の中
間スペーサ２１が配置されている。この中間スペーサ２
１は、信号処理素子３よりも若干小さく構成された平板
状に形成され、例えば、シリコン板、透明または不透明
の石英基板、ソーダガラス基板、樹脂加工板等を用いて
構成されている。この中間スペーサ２１は、信号処理素
子３に対向する裏面側が信号処理素子３上にダイボンド
シートを用いた接着により固定されている。On the signal processing element 3, a flat intermediate spacer 21 is arranged. This intermediate spacer 2
1 is formed in a flat plate shape slightly smaller than the signal processing element 3, and is formed by using, for example, a silicon plate, a transparent or opaque quartz substrate, a soda glass substrate, a resin processed plate, or the like. The back surface side of the intermediate spacer 21 facing the signal processing element 3 is fixed onto the signal processing element 3 by adhesion using a die bond sheet.
【００２７】中間スペーサ２１の上面には、ガラス封止
により平板状に形成された撮像素子（第二素子）４が載
置される。この撮像素子４は、中間スペーサよりも大き
い平板状に形成されており、中間スペーサ２１に対向す
る裏面側が中間スペーサ２１の表面上に固定されてい
る。本発明の固体撮像装置には、撮像素子４として、Ｃ
ＭＯＳイメージセンサ、ＣＣＤ等の所要のサイズに形成
される素子が備えられる。On the upper surface of the intermediate spacer 21, an image pickup element (second element) 4 formed in a flat plate shape by glass sealing is placed. The image pickup device 4 is formed in a flat plate shape larger than the intermediate spacer, and the back surface side facing the intermediate spacer 21 is fixed on the surface of the intermediate spacer 21. In the solid-state image pickup device of the present invention, as the image pickup element 4, C
Elements such as a MOS image sensor and a CCD formed in a required size are provided.
【００２８】このように、基板２上に固定された信号処
理素子３と撮像素子４との間には、中間スペーサ２１が
介在して設けられており、信号処理素子３と撮像素子４
との間には、中間スペーサ２１が有する厚みによって所
定の空間が形成されている。As described above, the intermediate spacer 21 is provided between the signal processing element 3 fixed on the substrate 2 and the image pickup element 4, and the signal processing element 3 and the image pickup element 4 are provided.
A predetermined space is formed between and by the thickness of the intermediate spacer 21.
【００２９】この中間スペーサ２１は、中間スペーサ２
１と信号処理素子３及び撮像素子４のそれぞれの間に銀
ペーストを介在させて１００〜１５０℃に加熱するか、
または、中間スペーサ２１と各素子それぞれの間にポリ
イミド樹脂を介在させて１３０〜１９０℃に加熱するこ
とにより、信号処理素子３及び撮像素子４にそれぞれ接
着される。The intermediate spacer 21 is the intermediate spacer 2
1 and each of the signal processing element 3 and the image pickup element 4 with a silver paste interposed therebetween and heated to 100 to 150 ° C., or
Alternatively, a polyimide resin is interposed between the intermediate spacer 21 and each element and heated to 130 to 190 ° C., so that the signal processing element 3 and the image pickup element 4 are bonded to each other.
【００３０】中間スペーサ２１としては、０．０３ｍｍ
〜０．３５ｍｍ程度の厚さに形成されたものが用いら
れ、信号処理素子３と撮像素子４との間の空間は、中間
スペーサ２１の厚み及び銀ペースト等の接着層の厚みを
合わせて０．１ｍｍ〜０．５ｍｍ程度となっている。As the intermediate spacer 21, 0.03 mm
The space between the signal processing element 3 and the image pickup element 4 is 0 when the thickness of the intermediate spacer 21 and the thickness of the adhesive layer such as silver paste are combined. It is about 1 mm to 0.5 mm.
【００３１】信号処理素子３及び撮像素子４が配置され
た基板２上には、下面が開放された中空のケース本体５
が載置され、信号処理素子３及び撮像素子４の側面及び
上面を覆っている。このケース本体５は、その下端面が
接着剤によって基板２の周縁部に固定されている。ケー
ス本体５の上面には、信号処理素子３及び撮像素子４が
設けられた基板２の略中央部分に対向して開口５ａが形
成されており、この開口５ａの周縁には、上部に所定高
さに突出するフランジ５ｂが設けられている。On the substrate 2 on which the signal processing element 3 and the image pickup element 4 are arranged, a hollow case body 5 having an open lower surface is provided.
Is placed on the side surface and covers the side surface and the upper surface of the signal processing element 3 and the imaging element 4. The lower end surface of the case body 5 is fixed to the peripheral portion of the substrate 2 with an adhesive. An opening 5a is formed on the upper surface of the case main body 5 so as to face the substantially central portion of the substrate 2 on which the signal processing element 3 and the image pickup element 4 are provided. A flange 5b that protrudes further is provided.
【００３２】また、ケース本体２の上面に形成された開
口５ａには、この開口５ａを閉塞する平板状のフィルタ
ー６によって閉塞されており、信号処理素子３及び撮像
素子４が配置されたケース本体５の内部を密閉状態に封
止している。ケース本体５の開口５ａから上部に突出す
るフランジ５ｂの上端部には、このフランジ５ｂの上端
部を覆うレンズ保持具７が設けられており、このレンズ
保持具７の略中央部に、ケース本体５内に配置された撮
像素子４に光を集光するレンズ８が保持されている。ま
た、ケース本体５内の信号処理素子３等が配置された中
央部分に隣接する周辺部分には、制御装置等の周辺回路
６が配置されている。The opening 5a formed on the upper surface of the case body 2 is closed by a flat plate-shaped filter 6 that closes the opening 5a, and the case body in which the signal processing element 3 and the image pickup element 4 are arranged. The inside of 5 is hermetically sealed. A lens holder 7 for covering the upper end of the flange 5b is provided at the upper end of the flange 5b protruding upward from the opening 5a of the case body 5, and the case main body is provided at a substantially central portion of the lens holder 7. A lens 8 for condensing light is held by the image pickup device 4 arranged in the image pickup device 5. Further, a peripheral circuit 6 such as a control device is arranged in the peripheral portion adjacent to the central portion in which the signal processing element 3 and the like are arranged in the case body 5.
【００３３】この固体撮像装置２０は、基板２上に順番
に設けられた信号処理素子３及び撮像素子４に内蔵され
るそれぞれの内蔵回路素子と、ケース本体５内の周辺部
に設けられた周辺回路９とをワイヤーＷで接続するワイ
ヤー方式のスタックド構造を有しており、信号処理素子
３及び撮像素子４のそれぞれの周縁部は、周辺回路９に
接続されたワイヤＷを接続するためのワイヤボンド領域
（ボンディング領域）３ａ及び４ａとなっている。信号
処理素子３及び撮像素子４の各素子に形成されたワイヤ
ボンド領域３ａ及び４ａには、図示しない複数のパッド
（端子部）が設けられており、各パッドにワイヤＷが接
続されて、周辺回路９と導通するようになっている。This solid-state image pickup device 20 includes respective built-in circuit elements built in the signal processing element 3 and the image pickup element 4 which are sequentially provided on the substrate 2, and a peripheral portion provided in the peripheral portion of the case body 5. It has a wire type stacked structure for connecting to the circuit 9 with a wire W, and the peripheral portions of the signal processing element 3 and the image pickup element 4 are wires for connecting the wire W connected to the peripheral circuit 9. Bond regions (bonding regions) 3a and 4a are formed. A plurality of pads (terminal portions) (not shown) are provided in the wire bond regions 3a and 4a formed in the respective elements of the signal processing element 3 and the image pickup element 4, and the wires W are connected to the respective pads to surround the pads. It is electrically connected to the circuit 9.
【００３４】上記構成を有する本発明の固体撮像装置２
０は、次の工程を順次行うことによって製造される。ま
ず、ダイボンドペーストによって基板２上に信号処理素
子３を固定する工程を行う。続いて、この信号処理素子
３上に、前述の銀ペースト等のダイボンドペーストを用
いて中間スペーサ２１を固定し、その後、信号処理素子
３のワイヤボンド領域３ａに形成された各パッドに周辺
回路９に接続されたワイヤＷをワイヤボンドにより接続
する工程を行う。次に、中間スペーサ２１上に、無銀低
温ダイボンドペーストを塗布して熱硬化することによ
り、撮像素子４を固定し、その後、撮像素子４のワイヤ
ボンド領域４ａに形成された各パッドに周辺回路９に接
続されたワイヤＷをワイヤボンドにより接続する工程を
行う。次に、フィルタ６及びレンズ８が保持されたレン
ズ保持具７を装着したケース本体５の下端部を基板２上
に搭載し、ケース本体５内を封止して密閉状態にする工
程を行う。The solid-state image pickup device 2 of the present invention having the above structure
0 is manufactured by sequentially performing the following steps. First, a step of fixing the signal processing element 3 on the substrate 2 with a die bond paste is performed. Subsequently, the intermediate spacer 21 is fixed on the signal processing element 3 by using the die bond paste such as the above-mentioned silver paste, and then the peripheral circuit 9 is attached to each pad formed in the wire bond region 3a of the signal processing element 3. A step of connecting the wire W connected to the wire W by wire bonding is performed. Next, the silver-free low-temperature die bond paste is applied onto the intermediate spacer 21 and heat-cured to fix the image sensor 4, and then the peripheral circuits are attached to the pads formed in the wire bond regions 4 a of the image sensor 4. The process of connecting the wire W connected to 9 by wire bond is performed. Next, a step of mounting the lower end portion of the case body 5 on which the lens holder 7 holding the filter 6 and the lens 8 is mounted on the substrate 2 and sealing the inside of the case body 5 to a sealed state is performed.
【００３５】本発明の固体撮像装置２０では、信号処理
素子３と撮像素子４との間に形成された空間が、前述し
たように、０．１ｍｍ〜０．５ｍｍとなっており、この
ような間隔に形成された空間を利用して、ループの高さ
が１００μｍ以下となる超低ループのワイヤを用いてワ
イヤボンディングすることによって、信号処理素子３及
び撮像素子４の各ワイヤボンド領域３ａ及び４ａのパッ
ドに、ワイヤＷが接続されて、撮像素子４及び信号処理
素子３と周辺回路部９とが電気的に接続される。In the solid-state image pickup device 20 of the present invention, the space formed between the signal processing element 3 and the image pickup element 4 is 0.1 mm to 0.5 mm as described above. Wire bonding regions 3a and 4a of the signal processing element 3 and the image pickup element 4 are formed by wire-bonding using ultra-low loop wires having a loop height of 100 μm or less by utilizing spaces formed at intervals. The wire W is connected to the pad of, and the image pickup device 4, the signal processing device 3, and the peripheral circuit unit 9 are electrically connected.
【００３６】しかも、信号処理素子３及び撮像素子４の
間に中間スペーサ２１を介在させた構造を有しているの
で、ワイヤボンドを行う際に押圧力が加わっても撮像素
子４及び信号処理素子３に傾きが生じることを抑制する
ことができ、特に、撮像素子４に傾きが生じることを抑
制することにより、撮像素子４の受光部面のレンズ８に
対する傾きが生じることを抑制することができ、したが
って、レンズ８と撮像素子４との間の距離のバラツキが
生じることを抑制することができる。Moreover, since the intermediate spacer 21 is interposed between the signal processing element 3 and the image pickup element 4, even if a pressing force is applied during wire bonding, the image pickup element 4 and the signal processing element are formed. 3 can be suppressed, and in particular, by suppressing the inclination of the image sensor 4 from occurring, the inclination of the light receiving surface of the image sensor 4 with respect to the lens 8 can be suppressed. Therefore, it is possible to suppress the occurrence of variation in the distance between the lens 8 and the image sensor 4.
【００３７】以上説明したように、本発明の固体撮像装
置は、上下に順次積層された設けられる各素子の組合せ
に柔軟性をもたせることができ、しかも、各素子を組合
わせて配置する際に生じる素子の高さのばらつき、素子
の傾きを抑制することができるので、小型化且つ高精度
化を共に図ることができる。As described above, in the solid-state image pickup device of the present invention, it is possible to give flexibility to the combination of the respective elements which are sequentially stacked on top of each other, and moreover, when arranging the respective elements in combination. Since it is possible to suppress the variation in the height of the element and the inclination of the element that occur, it is possible to reduce the size and improve the accuracy.
【００３８】[0038]
【発明の効果】本発明の固体撮像装置は、第一素子（固
体撮像素子）と第二素子（撮像素子）との間に、中間ス
ペーサを配置しており、この中間スペーサが有する厚み
によって、第一素子のボンディング領域に形成された端
子部上にワイヤを接続するための空間を形成することが
できる。また、この場合、ワイヤの接続を行う際に押圧
力が加わっても第一素子及び第二素子に傾きが生じるこ
とを抑制することができるので、上下に順次積層させて
設けられる各素子の組合せに柔軟性をもたせることがで
き、しかも、各素子を組合わせて配置する際に生じる素
子の高さのばらつき、素子の傾きを抑制することができ
るので、小型化且つ高精度化を共に図ることができる。In the solid-state image pickup device of the present invention, the intermediate spacer is arranged between the first element (solid-state image pickup element) and the second element (image pickup element). A space for connecting the wire can be formed on the terminal portion formed in the bonding region of the first element. Further, in this case, since it is possible to prevent the first element and the second element from tilting even if a pressing force is applied when connecting the wires, it is possible to combine the elements that are sequentially stacked vertically. Since it is possible to provide flexibility, and to suppress variations in element height and element inclination that occur when arranging elements in combination, it is possible to reduce size and improve accuracy together. You can
【図１】本発明の固体撮像装置を示す断面図である。FIG. 1 is a sectional view showing a solid-state imaging device of the present invention.
【図２】従来の固体撮像装置を示す断面図である。FIG. 2 is a cross-sectional view showing a conventional solid-state imaging device.
【図３】従来のデバイス構造を示す断面図である。FIG. 3 is a cross-sectional view showing a conventional device structure.
２ 基板 ３ 信号処理素子 ４ 撮像素子 ５ ケース本体 ６ フィルター ７ レンズ保持具 ８ レンズ ９ 周辺回路 ２０ 固体撮像装置 ２１ 中間スペーサ 2 substrates 3 Signal processing element 4 image sensor 5 Case body 6 filters 7 Lens holder 8 lenses 9 peripheral circuits 20 Solid-state imaging device 21 Intermediate spacer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 25/07 Ｈ０１Ｌ 27/14 Ｄ 25/18 25/08 Ｚ Ｈ０４Ｎ 5/225 5/335 (72)発明者 後藤 祐介 岡山県浅口郡里庄町里見3121−１ Ｆターム(参考） 4M118 AA10 AB01 BA10 BA14 GD01 GD03 HA02 HA21 HA24 HA25 HA30 HA40 5C022 AC42 5C024 CY47 CY48 GY01 GY31 5F044 AA02 EE20 5F047 AA00 AA17 BA21 BB11 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 25/07 H01L 27/14 D 25/18 25/08 Z H04N 5/225 5/335 (72) Invention Person Yusuke Goto 3121-1 F-term, Satosho-cho, Asaguchi-gun, Okayama Prefecture (reference) 4M118 AA10 AB01 BA10 BA14 GD01 GD03 HA02 HA21 HA24 HA25 HA30 HA40 5C022 AC42 5C024 CY47 CY48 GY01 GY31 5F044 AA02 EE20 5F047 AA00
Claims (6)
子と、該第一素子上に接着剤によって固定された第二素
子と、該第一素子及び第二素子の周辺部における基板上
に配置された周辺回路部と、該第一素子及び第二素子と
該周辺回路部とを密閉状態にスタックド実装により収納
する中空の収納部材とを備え、該第一素子及び第二素子
のそれぞれの周縁部に、各素子に内蔵された回路素子に
導通する複数の端子部が形成されたボンディング領域が
形成されており、該周辺回路部と、該第一素子及び第二
素子のボンディング領域に設けられた端子部とがワイヤ
によって接続された固体撮像装置であって、 基板上に配置された該第一素子と該第二素子との間に
は、該第一素子のボンディング領域に形成された端子部
にワイヤを接続するために要する空間を形成する中間ス
ペーサが配置されていることを特徴とする固体撮像装
置。1. A first element fixed on a substrate with an adhesive, a second element fixed on the first element with an adhesive, and a substrate on a peripheral portion of the first element and the second element. A peripheral circuit section disposed in the first and second elements and a hollow storage member for storing the peripheral circuit section in a sealed state by stacked mounting, and each of the first element and the second element. In the peripheral portion of the, a bonding region is formed in which a plurality of terminal portions that are electrically connected to the circuit elements built in each element are formed, and in the peripheral circuit portion and the bonding areas of the first element and the second element, A solid-state imaging device, in which a provided terminal portion is connected by a wire, and is formed in a bonding region of the first element between the first element and the second element arranged on a substrate. Required to connect the wire to the terminal The solid-state imaging device, wherein an intermediate spacer is arranged to form a space.
の大きさ、または、前記第二素子より大きく、前記ボン
ディング領域上に重なりが生じる程度の大きさに形成さ
れている、請求項１に記載の固体撮像装置。2. The first element is formed to have a size similar to that of the second element, or to a size larger than the second element and large enough to cause an overlap on the bonding region. Item 2. The solid-state imaging device according to item 1.
ラス、ソーダガラス、樹脂のいずれかによって形成され
ている、請求項１に記載の固体撮像装置。3. The solid-state imaging device according to claim 1, wherein the intermediate spacer is made of any one of silicon, quartz glass, soda glass, and resin.
記第二素子は撮像素子である、請求項１に記載の固体撮
像装置。4. The solid-state imaging device according to claim 1, wherein the first element is a signal processing element, and the second element is an imaging element.
サーまたはＣＣＤである、請求項４に記載の固体撮像装
置。5. The solid-state imaging device according to claim 4, wherein the imaging device is a CMOS image sensor or a CCD.
前記中間スペーサ、及び該中間スペーサと該第二素子
は、ダイボンドシートまたは無銀ペーストによってそれ
ぞれ接着されている、請求項１〜５のいずれかに記載の
固体撮像装置。6. The substrate and the first element, the first element and the intermediate spacer, and the intermediate spacer and the second element are bonded by a die bond sheet or a silver-free paste, respectively. 5. The solid-state imaging device according to any one of 5 above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001290058A JP3674777B2 (en) | 2001-09-21 | 2001-09-21 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001290058A JP3674777B2 (en) | 2001-09-21 | 2001-09-21 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003101000A true JP2003101000A (en) | 2003-04-04 |
| JP3674777B2 JP3674777B2 (en) | 2005-07-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001290058A Expired - Fee Related JP3674777B2 (en) | 2001-09-21 | 2001-09-21 | Solid-state imaging device |
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| Country | Link |
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| JP (1) | JP3674777B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006129460A1 (en) * | 2005-06-03 | 2006-12-07 | Konica Minolta Holdings, Inc. | Imaging device |
| US7196407B2 (en) | 2004-03-03 | 2007-03-27 | Nec Electronics Corporation | Semiconductor device having a multi-chip stacked structure and reduced thickness |
| JP2007157767A (en) * | 2005-11-30 | 2007-06-21 | Shibaura Mechatronics Corp | Chip mounter |
-
2001
- 2001-09-21 JP JP2001290058A patent/JP3674777B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7196407B2 (en) | 2004-03-03 | 2007-03-27 | Nec Electronics Corporation | Semiconductor device having a multi-chip stacked structure and reduced thickness |
| WO2006129460A1 (en) * | 2005-06-03 | 2006-12-07 | Konica Minolta Holdings, Inc. | Imaging device |
| JP4771092B2 (en) * | 2005-06-03 | 2011-09-14 | コニカミノルタホールディングス株式会社 | Imaging device |
| JP2007157767A (en) * | 2005-11-30 | 2007-06-21 | Shibaura Mechatronics Corp | Chip mounter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3674777B2 (en) | 2005-07-20 |
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