JP2003179040A - Heat treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat treatment apparatus that prevents the production of a particle, reduces the trouble of maintenance, and can uniformly heat the front of a semiconductor wafer. <P>SOLUTION: A plate 100 is a magnetic material. Since the magnetic material generates an eddy current in a high-frequency magnetic field due to coils 800 and 880 and high-frequency inductive heating, iron having small skin thickness δand large skin resistance and magnetic stainless steel (18-0 stainless steel) are preferable. Additionally, at three places of the outer periphery of the plate 100, a nib 500 for retaining a wafer W is provided. A floating means is a pair of permanent magnets where the same poles oppose each other, and one of them 300a is mounted to the plate 100 and at the same time the other 300b is fixed to a floor member 400. A rotary means is a motor including a rotor 200a made of a plurality of permanent magnets mounted to the plate 100, and a stator 200b made of a plurality of cores that are excited by a coil (not illustrated here). <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a heat treatment apparatus used for forming a film such as an interlayer insulating film on a substrate such as a semiconductor wafer.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
For example, a sol-gel method, a silk method, a speed film method, a fox method, or the like is used to spin coat a coating film on a semiconductor wafer and perform chemical treatment or heat treatment to form an interlayer insulating film. Of these, when forming an interlayer insulating film by the silk method, speed film method, or Fox method, a coating solution is applied to a cooled semiconductor wafer,
The coating film is cured (cured) by heat treatment, cooling treatment, and further heat treatment and cooling treatment in a low oxygen concentration atmosphere to obtain an interlayer insulating film.

Further, in the photolithography process, the cleaned semiconductor wafer is first subjected to a hydrophobic treatment in an adhesion treatment unit, cooled in a cooling unit, and then a photoresist film is applied in a resist coating unit. Form by coating.

The semiconductor wafer on which the photoresist film has been formed is prebaked by a hot plate unit for heat treatment, cooled by a cooling unit, and exposed in a predetermined pattern by an exposure device. Subsequently, the exposed semiconductor wafer is post-exposure baked in a hot plate unit, cooled in a cooling unit, and a developing solution is applied to develop an exposure pattern. And
Finally, a post-baking process is performed in the hot plate unit to enhance the thermal transformation for polymerizing and the adhesion between the semiconductor wafer and the pattern. In order to perform these heat treatments, the semiconductor wafer is heated on a heating plate provided with a heater, for example.

[0005]

However, due to the heater pattern and the lamp arrangement pattern, the heating temperature becomes uneven in the plane of the semiconductor wafer. In order to prevent such heating unevenness, in Japanese Unexamined Patent Publication No. 6-236844, a semiconductor wafer mounting table is further provided so as to be close to the heating plate and only the semiconductor wafer mounting table is rotated. However, the heating efficiency is low because the semiconductor wafer is heated via the semiconductor wafer mounting table. Further, when a roller or the like is engaged with the outer periphery of the semiconductor wafer mounting table and is rotated by a motor, particles may be generated from the engaging portion and deposited on the semiconductor wafer.

On the other hand, if the semiconductor wafer mounting table is fixed and the heating plate is rotated, power must be supplied to the rotating heater terminal from the brush electrode, so that particles are generated by the contact between the rotating heater terminal and the brush electrode. Further, if the brush electrode is consumed, the contact becomes incomplete, the supply current becomes unstable, and the heating temperature becomes unstable. Further, it is necessary to replace the worn brush electrode.

Therefore, an object of the present invention is to provide a heat treatment apparatus which does not generate particles, does not require maintenance and can uniformly heat the front surface of a semiconductor wafer.

[0008]

According to the present invention for solving the above-mentioned problems, a plate on which a substrate is placed, a floating means for floating the plate, a rotating means for rotating the plate, and the plate are provided. It is a heat treatment device that is provided separately and that heats the plate, and heats while rotating the plate, and the heating means is a heating element or a lamp.

Specifically, the first invention is a plate on which a substrate is placed, a levitation means for levitation of the plate,
A heat treatment apparatus comprising a rotating means for rotating the plate, a heating means for heating the plate, and a floor member, wherein the frame body is heated while rotating, the plate being a magnetic body, and the floating means. Is a pair of permanent magnets having the same poles facing each other, one of which is attached to the plate and the other is fixed to the floor member, and the rotating means is composed of a plurality of permanent magnets attached to the plate. And a stator including a plurality of cores that are excited by a coil, the rotor being attached to the plate and the stator being fixed to the floor member, the heating means being a coil, and exciting the core. The plate is rotated by an eddy current generated in the plate by the current flowing through the coil serving as the heating means while rotating the plate. Heating the substrate by.

A second aspect of the invention is a frame body on which a substrate is placed, a levitation means for levitating the frame body, a rotating means for rotating the frame body, a heating means for heating the substrate, and a floor member. And a heat treatment device for heating the frame while rotating the frame, wherein the levitation means is a pair of permanent magnets facing the same pole, one of which is attached to the plate and the other of which is The rotating means is fixed to a floor member, and the rotating means is a motor including a rotor formed of a plurality of permanent magnets attached to the plate and a stator formed of a plurality of cores excited by a coil. The stator is fixed to the floor member, the heating means is a lamp, and the substrate is heated by radiant heat from the lamp while exciting the core to rotate the frame body. That.

A third aspect of the invention comprises a plate on which a substrate is placed, a levitation means for levitation of the plate, a rotation means for rotating the plate, a heating means for heating the plate, and a floor member. A heat treatment apparatus for heating the plate while rotating the plate, wherein the plate is a magnetic body, and the levitation means is a pair of permanent magnets facing the same pole, one of which is attached to the plate and the other of which is One is fixed to the floor member, the rotating means includes a plurality of blades attached to the outer periphery of the frame body and a nozzle for blowing gas to the blades of the frame body, and the heating means is a coil. The plate is heated by the eddy current generated in the plate by the current flowing in the coil which is the heating means while rotating the frame by the air flow. Heating the.

A fourth aspect of the present invention is a frame body on which a substrate is placed, a levitation means for levitating the frame body, a rotating means for rotating the frame body, a heating means for heating the frame body, and a floor. A heat treatment apparatus comprising a member and heating while rotating the frame body, wherein the levitation means is a pair of permanent magnets having the same poles facing each other, one of which is attached to the frame body and the other of which is attached. Is fixed to the floor member, the rotating means includes a plurality of blades attached to the outer periphery of the frame body and a nozzle for blowing gas to the blades of the frame body, the heating means is a lamp, The substrate is heated by the radiant heat from the lamp while rotating the frame by the air flow.

That is, in the first invention, the plate is levitated by the repulsive force of the permanent magnets, the plate is rotated by the rotor and the stator group by another permanent magnet group, and the plate is heated by electromagnetic induction heating. Therefore, since the substrate floats and rotates, the substrate is uniformly heated regardless of the eddy current pattern of the plate.

Further, in the second invention, the frame body is levitated by the repulsive force of the permanent magnets, the plate is rotated by the rotor and the stator group by another permanent magnet group, and the plate is placed on the frame body by the radiant heat of the lamp. The heated substrate. Therefore,
Since the substrate floats and rotates, the substrate is uniformly heated regardless of the lamp arrangement. Moreover, the thermal efficiency is high, probably because only the substrate is directly heated.

In the third aspect of the invention, the plate with blades is levitated by the repulsive force of the permanent magnets, the airflow is blown to rotate the plate, and the plate is heated by electromagnetic induction heating. Therefore, since the substrate floats and rotates,
The substrate is heated uniformly regardless of the eddy current pattern of the plate. Moreover, since there is no motor, power consumption can be reduced.

Further, in the fourth aspect of the invention, the repulsive force between the permanent magnets causes the frame body with the blades to float, the air stream is blown to rotate the plate, and the radiant heat of the lamp heats the substrate placed on the frame body. To do. Therefore, since the substrate floats and rotates, the substrate is uniformly heated regardless of the arrangement of the lamps. Moreover, the thermal efficiency is high, probably because only the substrate is directly heated. Furthermore, power consumption can be reduced because there is no motor.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the heat treatment apparatus of the present invention will be described below.
A heat treatment apparatus used for forming an interlayer insulating film on the surface of a semiconductor wafer (hereinafter referred to as "wafer"), which is a hardening treatment unit (dielectric low oxygen) that performs heat treatment while supplying an inert gas such as nitrogen gas. controlled cur
e unit; DLC) and bake processing unit (dielectric)
Taking a low oxygen controlled bake unit (DLB) as an example, a coating film forming apparatus (spin on dielectr) using these curing processing unit (DLC) and baking processing unit (DLB)
ic (SOD) system) will be described with reference to the drawings.

As shown in the top view of the SOD system of FIG. 1, this SOD system has a processing unit 1, a side cabinet 2, and a carrier station (CSB) 3. The processing section 1 has coating processing units (SCT) 11 and 12 provided on the upper side of the front side. Further, as shown in the front view of the SOD system in FIG. 2, the processing section 1 further has chemical chambers 13 and 14 provided in the lower stage on the front side thereof and containing chemicals and the like.

At the center of the processing unit 1, processing unit groups 16 and 17 each having a plurality of processing units stacked in multiple stages are provided, and a semiconductor wafer (wafer) W is transferred between these units by moving up and down. Wafer Transfer Mechanism (PRA) 18 for
Is provided. The side cabinet 2 has a bubbler (Bub) 27 for supplying a chemical solution in an upper stage thereof and a trap (TRAP) 28 for cleaning exhaust gas, and a power source 29 and a waste liquid are discharged in a lower stage thereof. It has a drain 31 for

FIG. 3 is a front view of the processing unit 1, and the processing unit group 16 on the left side includes a low temperature hot plate (LHP) 19 and two curing processing units (DLC) in order from the upper side. 20 and two aging units (DAC) 21 are laminated. Also,
The processing unit group 17 on the right side includes two baking processing units (DLB) 22, a low temperature hot plate (LHP) 23, two cooling plates (CPL) 24, and a transfer unit (TRS) in order from the top. ) 25 and a cooling plate (CPL) 26 are laminated. The transfer unit (TRS) 25 can also have the function of a cooling plate.

The wafer transfer mechanism (PRA) 18 extends in the Z direction, has a cylindrical support 51 having vertical walls 51a and 51b and a side opening 51c between them, and a cylindrical support 51 inside thereof. And a wafer carrier 52 that is provided so as to be vertically movable in the Z direction. The cylindrical support 51 is rotatable by the rotational driving force of the motor 53,
Along with that, the wafer transfer body 52 is also rotated integrally.

The wafer transfer body 52 includes a transfer base 54 and three wafer transfer arms 55, 56 and 57 which can be moved back and forth along the transfer base 54. -57 has a size capable of passing through the side surface opening 51c of the tubular support 51. The wafer transfer arms 55, 56, and 57 can be independently moved forward and backward by a motor and a belt mechanism built in the transfer base 54. Wafer carrier 5
The motor 2 moves up and down by driving a belt 59 with a motor 58. Reference numeral 40 is a drive pulley, and 41 is a driven pulley.

In such an SOD system, for example, when the interlayer insulating film is formed by the sol-gel method, the processing units are arranged in the cooling plate (CPL) 24/26 and the coating processing unit (SCT). 1
1, 12, an aging unit (DAC) 21, a low temperature hot plate (LHP) 19 and 23, and a baking processing unit (DLB) 22.

When the interlayer insulating film is formed by the silk method and the speed film method, the order of passing through the processing unit is the cooling plate (CPL) 24.
26, coating processing unit (SCT) 11.12 (coating of adhesion promoter), low temperature hot plate (LHP) 19.23, coating processing unit (SCT) 1
1.12 (application of this drug solution), low temperature hot plate (LHP) 19 and 23, bake processing unit (DLB)
22, the curing processing unit (DLC) 20.

Further, when the interlayer insulating film is formed by the Fox method, the order of passing through the processing units is as follows: cooling plate (CPL) 24/26, coating processing unit (SCT) 11/12, hot plate for low temperature. (LHP) 19 ・ 23, Bake processing unit (DLB)
22, the curing processing unit (DLC) 20.
The material of the coating film formed by these various methods is not limited, and various organic, inorganic, and hybrid materials can be used.

Next, a bake processing unit (DLB) 22 which is an embodiment of the heat treatment apparatus of the present invention will be described. 4 and 5 show a bake processing unit (DLB) 2
It is sectional drawing which showed an example of 2. Here, FIG. 4 shows a state in which the wafer W held by the nail (not shown) is being processed. Further, FIG. 5 shows a state in which the wafer W held by a wafer transfer arm (not shown) is transferred. Hereinafter, the bake processing unit (DLB) 22 will be described with reference to FIGS. 4 and 5 at the same time.

The bake processing unit (DLB) 22 includes a casing 61 and a heating section 6 for mounting and heating the wafer W.
2, a support ring 63 provided so as to surround the outer periphery of the heating portion 62, a lid 66 that can be raised and lowered by an elevating mechanism 66d, and a gas supply passage 66b provided on a side wall 66a of the lid 66. A gas supply pipe 67 for supplying gas,
An exhaust mechanism 68 provided at the center of the lid 66, and the lid 6
6 and a gas diffusion mechanism 69 that can be moved up and down at the same time.

An opening 61a is formed on the upper surface of the casing 61, an exhaust port 61b for exhausting the air inside the unit is formed on a side surface, and a wafer transfer mechanism (PRA) 18 and a wafer transfer mechanism (PRA) 18 are provided on another side surface. An openable and closable shutter (not shown) is formed so that the wafer W can be transferred between them.

A step is formed on the upper end surface of the support ring 63, and a seal ring 65 is arranged on the lower step thereof. The side wall 66a of the lid 66 closes the opening 61a, and the lid 66 is closed. When in the processing position, the side wall 66a
The lower surface of the chamber abuts on the seal ring 65 so that the processing chamber 70
Is formed. The gas supply pipes 67 are provided at two points symmetrical with respect to the center of the lid 66, and the gas supply passage 66b is provided.
In order to discharge the inert gas (hereinafter referred to as nitrogen gas) supplied to the processing chamber 70 from the gas supply passage 66b, the inner wall surface of the side wall 66a has four gas discharge locations. An outlet 66c is formed.

The gas diffusion mechanism 69 includes a rotary motor 38,
Fixing jig 39 for fixing the rotary motor 38 to the lid 66
And a rotary shaft (pivot) 3 attached to the rotary motor 38.
7 and a baffle ring 35 provided so as to surround the wafer W, and a connecting member 36 that connects the baffle ring 35 and the rotation shaft 37. 10), a blowout port 35a for nitrogen gas is formed. The exhaust mechanism 6
An exhaust path (not shown) is provided so that the gas exhausted from 8 does not hit the rotary motor 38.

Therefore, when the rotary motor 38 is driven to rotate, or when a reversing rotary motion is repeated in which a clockwise rotation of a predetermined angle and a counterclockwise rotation of a predetermined angle are alternately repeated, The baffle ring 35 rotates or reversely rotates in accordance with the movement of the rotary motor 38, and at this time, the position of the blowout port 35a also moves in accordance with the movement of the baffle ring 35, and the nitrogen discharged from the gas discharge port 66c. The gas is supplied into the processing chamber 70 through the blowing port 35a whose position moves.

The bake processing unit (DLB) of the SOD system for forming the interlayer insulating film has been described above, but the present invention has such a bake processing unit (DLB).
Not only used in B), but also in the baking unit (D
It can also be used for a curing processing unit (DLC) that performs a coating curtain effect treatment at a temperature higher than LB), a low temperature hot plate (LHP) that performs a heat treatment at a temperature lower than a baking treatment unit (DLB), and other processing units. it can.

Next, the heating section 62 used for DLB, DLC, LHP, etc. will be described. Heating unit 62 shown in FIG.
In the above, the plate is levitated by the repulsive force of the permanent magnets, the plate is rotated by the rotor and the stator group by another permanent magnet group, and the plate is heated by electromagnetic induction heating. The heating unit 62 includes a plate 100 on which a substrate is placed, floating means 300a and 300b for floating the plate, and rotating means 200a and 200b for rotating the plate 100.
Heating means 800, 880 for heating the plate 100;
And a floor member 400.

Here, the plate 100 is a magnetic material. This magnetic substance generates an eddy current in a high frequency magnetic field,
Iron or magnetic stainless steel (18-0 stainless steel) having a small skin depth δ and a large skin resistance is suitable for causing high frequency induction heating. Specifically, in a high frequency magnetic field with a frequency of 20 kHz, δ of iron is 0.11 mm, 18-0.
Since δ of stainless steel is 0.28 mm, plate 1
The thickness of 00 is about 0.1 to 0.3 mm. Further, claws 500 for holding the wafer W are provided at three locations on the outer periphery of the plate 100. Further, the outer circumference of the plate 100 is made smaller than the outer circumference of the wafer W so that the wafer W can be transported.

The levitation means is a pair of permanent magnets having the same poles facing each other, one of which is attached to the plate 100 and the other one of which is fixed to the floor member 400. In order to make the pair of permanent magnets small in size and increase the repulsive force, samarium cobalt, neodymium iron, or the like having a high magnetic flux density is suitable. Therefore, the plate 100, the rotor 200a of the rotating means,
The permanent magnet 300a of the levitation means integrally forms a levitation body. The permanent magnet 300a is levitated in the groove 330 of the permanent magnet 300b paired with the permanent magnet 300a by the repulsive force of these magnets. The flying height from the bottom of the groove 330 is
It is determined by the balance between the gravity applied to the wafer and the floating body and the repulsive force of the magnet. In addition, the sidewall of the groove 330 and the permanent magnet 300.
Since a repels each other, there is no contact.

The rotating means includes a rotor 200a made up of a plurality of permanent magnets attached to the plate 100, and a stator 200b made up of a plurality of cores excited by coils.
And a rotor 200a attached to the plate 100 and the stator 200b.
Is fixed to the floor member 400. Note that FIG. 6 does not show the coil wound around the stator 200b.

The heating means is a coil 880. At least one coil may be provided. Coil 8
Reference numeral 80 denotes an appropriate means, which is disposed between the plate and the floor member or above the substrate mounted on the plate at one position or both positions. The coil 880 has
Copper wire of 0.300 to 0.400 mm is 14 to 6
It is preferable to use a litz wire that is wound with zero windings to reduce the skin resistance. To drive this coil, turn on and off the high frequency high voltage switching transistor with the signal from the oscillation circuit,
For example, at the coil terminals, 24 kHz, 600 to 70
A high voltage of 0 V may be applied. In such a heating unit 62, the plate 10 is excited by exciting the core.
While rotating 0, the eddy current generated in the plate by the current flowing in the coil 880 is applied to the plate 100.
To heat the substrate W.

FIG. 7 shows a floating body (100, 200a, 30).
It is the top view which looked at 0a) from AA '. Plate 100
A ring-shaped rotor 200a is attached to the outer periphery of
A ring-shaped permanent magnet 300a is attached to the inner circumference thereof. The rotor 200a is composed of, for example, six permanent magnets in which the same magnetic poles are abutted and arranged in a ring shape.
The number of permanent magnets is arbitrary. The permanent magnet 300a is magnetized in the thickness direction of the ring.
The AA ′ surface of is a north pole, but it may be a south pole. In addition, the wafer W can be
Hold.

FIG. 8 is a sectional view of the levitation means. The levitation means 300a is levitated in the guide groove 330 of the levitation means 300b by magnetic repulsion. The guide groove 330 guides the floating body (100, 200a, 300a) around the rotation axis. Note that the coil wound around the stator 200b is not shown in FIG.

FIG. 9 is a perspective view of the stator 200b. In the stator 200b, six cores 220 are arranged in a ring shape, and an exciting coil is wound around each core 220. Here, the number of cores is the same as the number of permanent magnets of the stator. In this stator 200b, a magnetic pole of the rotor 200a is detected by an optical or magnetic sensor (not shown), and the coil 23 is divided into two phases or three phases based on the detection result.
0 is excited and the rotor 200a is rotated.

FIG. 10 is a plan view showing an example of a mechanism for carrying the wafer W into and out of the plate 100. Wafer transfer body 52 of wafer transfer mechanism (PRA) 18
The arm 650 corresponding to the arms 55, 56 and 57 of
It has three notches 510 and three claws 505.
When carrying the wafer W to the plate 100, the wafer W is supported by the claws 505 and approaches the plate 100 from above, and after the wafer W is placed on the plate 100, the notch 510 avoids the claws 500 of the plate 100. The arm 650 may be retracted from the heating unit 62 in the horizontal direction after the arm 650 is lowered to the permanent magnet 300a. To recover the wafer W after the overheat treatment, on the contrary, the arm 65 is used.
Operate 0.

In the heating unit 62 shown in FIG. 11, the frame body is levitated by the repulsive force of the permanent magnets, the plate is rotated by the rotor and the stator group by another permanent magnet group, and the plate is placed on the frame body by the radiant heat of the lamp. The heated substrate is heated. This heating part 6
Reference numeral 2 denotes a frame 700 on which a substrate is placed, floating means 300a and 300b for floating the plate, rotating means 200a and 200b for rotating the plate 100, and plate 1
The heating means 810 for heating 00 and the floor member 400 are provided. The heating means 810 is a lamp composed of one or more lamps, and heats the wafer W on the frame 700 by radiant heat. The other components are the same as those in FIG. The heating means is not limited to the lamp, and a heater, an infrared source having a heater embedded therein, a far infrared source, or the like may be used.

FIG. 12 shows the floating body (700, 20) of FIG.
It is the top view which looked at 0a, 300a) from AA '. 7 is the same as FIG. 7 except that the plate 100 is changed to the frame 700.

The heating unit 62 shown in FIG.
The plate with wings is levitated by the repulsive force of
Attach the plate to rotate the plate and use electromagnetic induction heating to rotate the plate.
To heat. The heating unit 62 is a plate on which a substrate is placed.
100 and levitation means 3 for levitation of the plate 100
00a, 300b and the plate 100 is rotated
Rotating means and heating means 880 for heating the plate
And a floor member 400. Floating means, heating means
Is the same as that shown in FIG. The rotating means is
A plurality of wings 60 attached to the outer periphery of the plate 100
0, blow air flow to the wings 600 of the frame 700
And a nozzle 900 for 1 or 2 or more nozzles
900 is started from the floor member 400, for example,
From piping to N _TwoAnd the like is supplied to the nozzle 900.
Just do it.

FIG. 14 shows the floating body (100, 30) of FIG.
It is the top view which looked at 0a) from AA '. Plate 100
A plurality of wings 600 are attached to the outer circumference of the, and a ring-shaped permanent magnet 300a is attached to the inner circumference thereof.
The AA 'surface of the permanent magnet 300a is an N pole, but S
It may be a pole. The wafer W is held by the claws 500 on the outer periphery of the plate.

In the heating unit 62 shown in FIG. 15, the repulsive force of the permanent magnets levitates the frame with blades, blows an air stream to rotate the frame, and the substrate placed on the frame by the radiant heat of the lamp. To heat. The heating unit 62 includes a frame 700 on which a substrate is placed and a levitation means 300 for floating the frame 700.
a, 300b, rotating means for rotating the frame, heating means 810 for heating the plate, and floor member 400.
It has and. This heating unit 62 has a heating means 800.
13 except that the lamp is changed to a lamp 810.
Is the same as.

FIG. 16 is a plan view of the floating body (700, 300a) viewed from AA '. Plate 100 to frame 7
It is similar to FIG. 14 except that it is changed to 00.

The embodiment of the heating unit 62 is not limited to the above description. For example, the shape of the claw 500 may be changed to change the wafer.
The W may directly contact the plate 100.
Further, the height of the upper permanent magnet 300a and the lower permanent magnet 300b of the levitation means may be set to be substantially the same as that of the stator 200b, so that the height of the entire heating device may be reduced. Further, in order to optimize the substrate rotation speed according to the heating time, based on the output of the sensor that detects the magnetic pole of the rotor 200a,
The position, speed, and acceleration of the rotor 200a may be feedback-controlled by a computer. Further, in the above embodiment, the wafer which is a circular substrate is used, but the present invention can be applied to a rectangular substrate such as a reticle substrate or a glass substrate by changing the shape of the heating unit 62.

[0049]

According to the heat treatment apparatus of the present invention described above, since the plate or the frame on which the substrate is placed floats without coming into contact with the rotating means, particles are not generated, and the particles cause defects in the substrate. Does not occur. Also,
Since the plate on which the substrate is placed is levitated, it becomes difficult for heat to be transferred to the wall, floor, etc. of the heat treatment unit, and adverse effects on other adjacent units can be reduced.

Further, since the substrate is rotated, the substrate can be uniformly overheated. Particularly, unlike the conventional case, since there is no lifting pin hole that penetrates the hot plate, the temperature uniformity is further improved. Further, when the treatment is performed in the N ₂ atmosphere, the influence of the film quality roots due to the unevenness of the atmosphere can be reduced. Further, since there is no mechanical contact portion in the rotating means, maintenance work is reduced.

[Brief description of drawings]

FIG. 1 is a top view of an upper stage of a coating film forming apparatus (SOD system) including a bake processing unit (DLB) and a curing processing unit (DLC).

FIG. 2 is a front view of a coating film forming apparatus (SOD system) including a bake processing unit (DLB) and a curing processing unit (DLC).

FIG. 3 is a front view of a processing unit of a coating film forming apparatus (SOD system).

FIG. 4 is a baking processing unit (DL) during heat treatment of a wafer.
B) Example cross-sectional view

FIG. 5 is a baking processing unit (DL) during wafer transfer.
B) Example cross-sectional view

FIG. 6 is a sectional view of a first heating unit of the heat treatment apparatus of the present invention.
The exciting coil wound around the stator 200b is omitted.

FIG. 7 is a plan view of AA ′ of FIG.

FIG. 8 is a cross-sectional view for explaining how the levitation means of the heating unit of FIG. 6 floats above the rotation means. The exciting coil wound around the stator 200b is omitted.

9 is a perspective view of the stator of the rotating means of FIG.

FIG. 10 is a plan view of a wafer transfer arm.

FIG. 11 is a sectional view of a second heating section of the heat treatment apparatus of the present invention.

FIG. 12 is a plan view of AA ′ of FIG.

FIG. 13 is a sectional view of a third heating section of the heat treatment apparatus of the present invention.

14 is a plan view of AA ′ of FIG.

FIG. 15 is a sectional view of a fourth heating section of the heat treatment apparatus of the present invention.

16 is a plan view of AA ′ of FIG.

[Explanation of symbols]

100 plates 200a rotor 200b stator 220 core 230 Excitation coil 300a, 300b levitation means 330 Guide groove 400 floor material 500,505 claws 510 Notch 600 birds 800,880 High frequency magnetic field generating coil 810 lamp 900 nozzles

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 5F031 CA02 CA05 CA07 FA01 FA02                       FA04 FA07 GA06 GA47 GA49                       HA02 HA37 HA50 HA59 JA21                       JA31 JA51 LA07 LA13 MA26                       MA30 NA04 PA26                 5F045 BB10 BB15 DP28 EB19 EE14                       EF01 EK02 EK11 EM10 EN04

Claims (13)

[Claims] 1. A plate on which a substrate is placed, a levitation unit for levitation of the plate, a rotation unit for rotating the plate, and a heating unit provided separately from the plate for heating the plate, A heat treatment apparatus which heats while rotating the plate. 2. The heat treatment apparatus according to claim 1, wherein the heating means is a heating element. 3. The heat treatment apparatus according to claim 1, wherein the heating means is a lamp. 4. The plate is a magnetic body, the heating means is a coil, and the plate is heated by an eddy current generated in the plate by an electric current flowing through the coil which is the heating means to heat the substrate. A heat treatment apparatus characterized by: 5. A plate for mounting a substrate, a floating means for floating the plate, a rotating means for rotating the plate, a heating means for heating the plate, and a floor member, and rotating the plate. In the heat treatment apparatus for heating while making the plate, the plate is a magnetic body, the levitation means is a pair of permanent magnets facing the same pole, one of which is attached to the plate and the other is The rotor is fixed to the floor member, and the rotating means is a motor including a rotor including a plurality of permanent magnets attached to the plate and a stator including a plurality of cores excited by a coil, and the rotor on the plate. While mounting and fixing the stator to the floor member, the heating means is a coil, while exciting the core to rotate the plate. Thermal processing apparatus characterized by heating the substrate by heating the plate in an eddy current generated in the plate by a current flowing through the coil is the heating means. 6. A frame body on which a substrate is placed, a levitation means for levitating the frame body, and a rotating means for rotating the frame body,
A heat treatment apparatus comprising a heating means for heating the substrate and a floor member, for heating while rotating the frame body, wherein the floating means is a pair of permanent magnets facing the same pole, one of which is While fixing one to the plate and the other one to the floor member, the rotating means includes a rotor including a plurality of permanent magnets attached to the plate and a stator including a plurality of cores excited by a coil. A motor including: the rotor attached to the plate, the stator fixed to the floor member, the heating means being a lamp, the core being excited to rotate the frame, and the radiation from the lamp. A heat treatment apparatus for heating the substrate by means of: 7. A plate for mounting a substrate, a levitation means for levitation of the plate, a rotation means for rotating the plate, a heating means for heating the plate, and a floor member, and the plate is rotated. In the heat treatment apparatus for heating while making the plate, the plate is a magnetic body, the levitation means is a pair of permanent magnets facing the same pole, one of which is attached to the plate and the other is Fixed to the floor member, the rotating means includes a plurality of wings attached to the outer periphery of the frame body, and a nozzle for blowing an air flow to the wings of the frame body, the heating means is a coil While rotating the frame by the air flow, the plate is heated by heating the plate with an eddy current generated in the plate by an electric current flowing through a coil which is the heating means. Heat treatment apparatus characterized by. 8. A frame body on which a substrate is placed, a levitation means for levitating the frame body, and a rotating means for rotating the frame body,
A heat treatment apparatus that includes a heating unit that heats the frame and a floor member, and heats the frame while rotating the frame, wherein the floating unit is a pair of permanent magnets facing the same pole, One is attached to the frame and the other is fixed to the floor member, and the rotating means blows an air flow to the plurality of wings attached to the outer periphery of the frame and the wings of the frame. And the heating means is a lamp, and the substrate is heated by radiation from the lamp while rotating the frame body by the airflow. 9. The heat treatment apparatus according to claim 5, wherein the pair of permanent magnets of the levitation means are a permanent magnet having a groove and a permanent magnet having a width smaller than the width of the groove. 10. The plate is a disk, and the one permanent magnet of the levitation means and the rotor of the rotating means are concentrically attached to the plate, and the plates are opposed to each other to the other of the levitation means. 7. The heat treatment apparatus according to claim 5, wherein the permanent magnet and the stator of the rotating means are concentrically fixed. 11. The frame is a stepped ring,
The substrate is placed on the upper surface of the step, the one permanent magnet of the levitation means is attached to the lower surface of the step, and the one permanent magnet of the levitation means is fixed in opposition thereto. The heat treatment apparatus according to claim 7 or 8. 12. The heating means is arranged between the plate and the floor member or at one position or both positions above the substrate placed on the plate. Alternatively, the heat treatment apparatus according to item 7. 13. The heat treatment apparatus according to claim 6, wherein the lamp is arranged above the substrate placed on the frame body.