JP2003149270A - Method for manufacturing semiconductor-inspecting apparatus and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor-inspecting apparatus for preventing a probe from being damaged in handling by retaining a probe surface where the probe is formed. SOLUTION: When the probe 4 is to be formed, a probe protection projection 5 whose tip area is larger than that of the tip in the probe 4 is also formed. Additionally, in a positioning groove formation process for forming a positioning groove, the probe protection projection 5 is removed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for manufacturing a semiconductor inspection device and a technique for manufacturing a semiconductor device, and particularly to a step of processing a non-probe surface which is a surface opposite to a probe surface on which a probe (probe) is formed. Related to effective technology.

[0002]

2. Description of the Related Art In the process of manufacturing a semiconductor device such as an IC or an LSI, a pre-process for forming a plurality of circuits on the surface of a silicon wafer and a silicon wafer on which a plurality of circuits are formed are divided into individual semiconductor chips. The semiconductor chip can be divided into post-processes of sealing and packaging using a resin or ceramic.

After the circuit is formed on the surface of the silicon wafer by the above-mentioned pre-process, the electrical characteristic inspection of this circuit is performed. Further, the electrical characteristic inspection is performed even after the package is assembled in the post process. Based on the result of the electrical characteristic inspection, it is selected whether the product is a good product or a defective product.

The above-mentioned electrical characteristic test is a continuity test between circuits or a probing test which is a test for judging whether or not an element works properly, and a thermal stress or an electrical stress is applied to a circuit in a high temperature atmosphere. It can be divided into a burn-in inspection to determine.

Usually, the probing inspection is performed in a silicon wafer state in which a circuit is formed on the surface in a pre-process, and the burn-in inspection is performed after a package is assembled in a post-process.

However, in recent years, wafer level burn-in (WLBI) has been performed in which burn-in inspection is performed in a silicon wafer state from the viewpoint of being able to rescue defective products in burn-in and reducing the cost by improving the selection yield.

For the above-mentioned probing inspection and wafer level burn-in inspection, for example, Japanese Patent Laid-Open No. 11-274251.
As described in the publication, a semiconductor inspection device using a silicon contactor in which a substrate made of silicon is processed to form a probe is used.

The silicon contactor includes a probe formed by processing one surface of a substrate made of silicon, and a beam formed by processing the substrate so that the formed probe is formed on the beam. . Then, the secondary electrode pad is formed on the surface opposite to the surface on which the probe is formed,
The secondary electrode pad and the probe are electrically connected by wiring. A tester for inspecting electrical characteristics is electrically connected to the secondary electrode pad of this silicon contactor.

Then, by electrically contacting the pad on the chip area of the wafer to be inspected with the probe of the silicon contactor, the semiconductor chip to be inspected and the tester are electrically connected through the silicon contactor, and a probing inspection, Wafer level burn-in inspection is performed.

[0010]

As a method of manufacturing a silicon contactor, micromachine technology is applied to process both sides of a substrate for manufacturing. However, because of the need for patterning accuracy, the probe is first formed and then the probe is formed. After the formation, double-sided processing by patterning is performed. Therefore, when patterning (resist coating, exposure, and development) on the surface opposite to the surface on which the probe is formed (non-probe surface), the surface on which the probe is formed (probe surface) is held as the back surface for handling.

However, since only the probe is projected on the probe surface of the silicon contactor (for example, 216 probes on a large chip of about 30 mm × 50 mm (protrusion shape having a height of 30 μm)), the probe surface is held. Then, when the probe is contacted during handling, and further contact is made, the load is concentrated on the tip of the probe, which causes a problem that the probe is damaged.

In particular, when the probe surface is held and handled by vacuum suction, the pressure due to the suction concentrates on the tip of the probe, which causes a problem that the probe is damaged.

In order to solve the above problems, it is possible to protect the direct contact of the probe by applying a resist on the probe surface, but a step of applying a resist on the probe surface is newly added. Is complicated and the probe cannot be sufficiently prevented from being damaged.

It is an object of the present invention to provide a method of manufacturing a semiconductor inspection device capable of preventing damage to a probe when the probe surface on which the probe is formed is held and handled.

Another object of the present invention is to carry out handling while holding the probe surface on which the probe is formed.
It is an object of the present invention to provide a method of manufacturing a semiconductor inspection device capable of preventing damage to a probe without adding a new process.

Another object of the present invention is to provide a method of manufacturing a semiconductor device which can perform a reliable inspection using a reliable semiconductor inspection device without probe damage.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0018]

Of the inventions disclosed in this application, typical ones will be described below.
It is as follows.

A method of manufacturing a semiconductor device according to the present invention comprises a probe forming step of forming a probe to be brought into contact with an object to be inspected on one surface of a substrate made of silicon, and holding a probe surface formed with the probe by the probe forming step. Then, a non-probe surface processing step of processing a non-probe surface that is the surface opposite to the probe surface, and a positioning groove forming step of forming a positioning groove for positioning the probe formed by the probe forming step. A semiconductor device manufacturing method comprising an inspection step of inspecting an electrical characteristic of a semiconductor device using a semiconductor inspection device formed by including the method, wherein the probe forming step forms a protrusion on a surface on which a probe is formed. And a non-probe surface processing step, in which the probe surface on which the projection is formed by the projection forming step is formed. Lifting to said processed non-probe surface, the positioning groove forming step is to remove the protrusions formed by the projection forming step.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings. In all the drawings for explaining the embodiments, members having the same function are designated by the same reference numerals, and the repeated description thereof will be omitted.

A method of manufacturing the silicon contactor of the semiconductor inspection apparatus according to the embodiment will be described with reference to FIGS. 1 to 16 are cross-sectional views showing a process of manufacturing a silicon contactor of a semiconductor inspection device.

First, as shown in FIG. 1, a substrate 1 made of silicon is prepared. Then, a silicon dioxide (SiO ₂ ) film 2 is formed on both surfaces of the substrate 1 made of silicon by using a thermal oxidation method as shown in FIG.

Next, a resist film 3 is applied to one surface of the substrate 1 on which the silicon dioxide (SiO ₂ ) film 2 is formed. Then, by exposing through a photomask and developing, patterning is performed as shown in FIG. The area where the resist film 3 is left by patterning is an area for forming a probe and an area for forming a protrusion (probe protection protrusion) for protecting the probe.

Then, as shown in FIG.
After removing the silicon dioxide film 2 not coated with the resist by dry etching, as shown in FIG.
To remove. In this way, the silicon dioxide film 2 on one surface of the substrate 1 can be patterned.

Next, as shown in FIG. 6, the substrate 1 made of silicon is etched by using the silicon dioxide film 2 as a mask. When etching, silicon dioxide film 2
Since the region where is present is not etched, the probe 4 (for example, a protrusion shape having a height of 30 μm) made of silicon and the probe protection protrusion 5 are formed. After the etching is completed, the silicon dioxide film 2 is removed as shown in FIG.

Thus, in the probe forming step of forming the probe 4, the probe protection protrusion 5 for preventing damage to the probe can be formed at the same time.
Therefore, the above-mentioned probe forming step also serves as a protrusion forming step for forming the probe protection protrusion 5. Therefore, the probe protection protrusion 5 can be formed without adding a new process of forming the probe protection protrusion 5, and the process can be prevented from becoming complicated.

Next, as shown in FIG. 8, a silicon dioxide film 6 is formed on the surface of the substrate 1 on which the probes 4 and the probe protection protrusions 5 are formed by using a thermal oxidation method or the like. afterwards,
By applying a resist film 7 and exposing and developing it through a photomask, as shown in FIG. 9, patterning is performed so that the resist film 7 remains in the region where the probe 4 exists. Then, as shown in FIG.
Etching is performed, and then the resist film 7 remaining in the region where the probe 4 is present is removed as shown in FIG.

The above-described process was a process for processing the probe surface side forming the probe 4, but next comes a non-probe surface processing process for processing the non-probe surface opposite to the probe surface. The processing of the non-probe surface is performed by holding and handling the probe surface which is the back surface.

Therefore, conventionally, when the surface on which the probe is formed is held by the holding table, only the probe is projected on the probe surface, so that the probe is contacted. Further, in the case of contact, since the load is concentrated on the tip of the probe, there is a problem that the probe is damaged. However, in the present embodiment, the probe protection is performed when forming the probe 4 as described above. The protrusion 5 is also formed. Therefore, when the non-probe surface is processed while the probe surface is held by the holding table, most of the probe protection protrusion 5 receives the weight due to the contact, so that the damage due to the contact of the probe 4 can be prevented.

Therefore, from the viewpoint of dispersing the load applied to the probe 4, it is desirable that the probe protection protrusions 5 are formed on the substrate 1 as closely as possible. Similarly, from the viewpoint of dispersing the load applied to the probe 4, the area of the tip of the probe protection protrusion 5 is preferably larger than the area of the tip of the probe 4. In particular, probe 4
From the viewpoint of preventing damage to the probe, the area of the tip of the probe protection protrusion 5 is preferably 500 times or more the area of the tip of the probe 4.

The non-probe surface processing step of processing the non-probe surface while holding the probe surface on which the probe 4 is formed will be described below.

The probe surface on which the probe 4 and the probe protection protrusion 5 are formed is held as a back surface, and the resist film 8 is applied to the non-probe surface on which the silicon dioxide film 2 is formed. Then, by exposing and developing through a photomask, patterning is performed as shown in FIG. The patterning is performed so as to make a beam for giving elasticity to the portion of the probe 4.

Then, as shown in FIG. 13, the silicon dioxide film 2 on which the resist film 8 has not been applied is removed by dry etching, and then the resist film 8 is removed as shown in FIG. In this way, the silicon dioxide film 2 on the non-probe surface can be patterned.

Next, as shown in FIG. 15, a KOH (potassium hydroxide) solution is used to anisotropically form a positioning groove 9 for positioning the probe and a groove 10 for forming a beam. Etching.

In anisotropic etching, the etching rate and depth (height) in the direction in which etching progresses due to corner drop
The etching rates in the directions are different. For example, the etching rate in the direction in which the etching proceeds due to the corner drop progresses at a rate 2.8 times the etching rate in the depth (height) direction.

Therefore, by forming the probe protection protrusion 5 into a shape and a size corresponding to the depth of the positioning groove 9,
In the positioning groove forming step of forming the positioning groove 9, the probe protection protrusion 5 can be removed. As described above, since the probe protection protrusion 5 can be removed during the existing positioning groove forming process, it is not necessary to add a new process for removing the probe protection protrusion 5 and the process is complicated. It can be avoided.

Next, the positioning groove 9 and the groove 1 for making a beam
After forming 0, through holes are formed as shown in FIG. 16, and wirings 11 and 12 are formed. In this way, the silicon contactor of the semiconductor inspection device can be formed.

According to the present embodiment, it is possible to prevent damage to the probe when the probe surface on which the probe is formed is held and handled.

Next, in the positioning groove forming step of forming the positioning groove 9 described above with reference to FIGS. 17 to 22,
As an example, a process of removing the probe protection protrusion having the shape of a square prism will be described.

The upper part of FIG. 17 is a view of the state in which the probe protection protrusion 5 in the shape of a square prism is formed on the substrate 1 having the (100) plane of silicon as the surface, as viewed from above.
The probe protection protrusion 5 in the shape of a square column is composed of four (111) planes and one (100) plane. The lower part of FIG. 17 is a cross-sectional view of the diagram shown in the upper part of FIG. 17 as seen from the lateral direction.

The probe protection protrusion 5 shown in FIG.
When etching is started by a KOH (potassium hydroxide) solution, as shown in FIG. 18, the etching in the depth direction of the substrate 1 having the (100) face of silicon as the surface proceeds, and (111) of the probe protection protrusion 5 is formed. The angle drop formed by the () plane progresses, and the (221) plane appears.

Then, the etching of the (221) plane of silicon proceeds, and the probe protection protrusion 5 is formed as shown in FIG.
As shown in (4), it has a shape of a square column base having (221) planes as four side surfaces.

Further, as the etching with the KOH solution progresses, as shown in FIG. 20, the size of the bottom surface is reduced and the (221) surface is changed from the shape of the square prism base having the probe protection protrusion (221) surface as the side surface. It will be in the shape of a quadrangular prism that forms the side surface. Then, as shown in FIG. 21, the bottom surface and height of the quadrangular prism are reduced, and finally the probe protection protrusion 5 is removed as shown in FIG. Although the etching progresses in the depth direction of the substrate 1 before the probe protection protrusion 5 is removed, the probe protection protrusion 5 is removed before the etching in the depth direction reaches the depth of the positioning groove 9. If so, the probe protection protrusion 5 can be removed in the positioning groove forming step. That is, KOH
By anisotropic etching with a solution, the probe protection protrusion 5 can be removed before the positioning groove 9 is formed.

Next, using the semiconductor inspection device manufactured by the method for manufacturing a semiconductor inspection device described in the present embodiment, an electric characteristic inspection of an electric circuit (semiconductor device) formed on a wafer to be inspected is performed. FIG. 23 shows how this is done.

FIG. 23 shows a portion where the silicon contactor of the semiconductor inspection device contacts an electric circuit formed on the wafer to be inspected. In FIG. 23, the silicon contactor of the semiconductor inspection apparatus has a plurality of probes 4 formed on a substrate 1 on which a beam is formed. Further, a silicon contactor positioning frame 13 is formed in the positioning groove 9. The probe 4 formed on the silicon contactor is configured so as to be able to contact the electrode pad 14 of the wafer 15 on which the electric circuit is formed. Wirings formed on the silicon contactor and secondary electrode pads for making electrical contact with the tester are not shown. The electrical characteristic test is performed by the tester via the silicon contactor having the above-described configuration.

Next, an example of a semiconductor device manufacturing method including an inspection step using the semiconductor inspection device manufactured by the semiconductor inspection device manufacturing method described in the present embodiment will be described with reference to FIG.

In the method of manufacturing a semiconductor device according to the present embodiment, in the pre-process S101 of FIG. 24, device elements and wirings are formed on a silicon wafer to form an electric circuit. Next, the burn-in inspection of the electric circuit formed on the silicon wafer is performed by using the semiconductor inspection apparatus manufactured by the method for manufacturing a semiconductor inspection apparatus according to the present embodiment. (B / I (WLBI)) is performed (inspection step) (S102).

After that, the first probing inspection (P
Inspection 1) is performed (S103), and the semiconductor chip determined to be defective is repaired (S104). Then, the second probing inspection (P inspection 2) was performed (S105).
After that, the semiconductor chips are cut into pieces and the packages are assembled (S106). Next, a tester sorts (S107) and ships (S108). In this way, the semiconductor device is manufactured.

As described above, according to the method of manufacturing a semiconductor device of the embodiment, a highly reliable semiconductor inspection device without probe damage is used to inspect a highly reliable semiconductor device. You can

Although the invention made by the present inventor has been specifically described based on the above embodiment, the present invention is not limited to the above embodiment, and various modifications are made without departing from the gist thereof. It goes without saying that it is possible.

[0051]

The effects obtained by the typical ones of the inventions disclosed in this application will be briefly described as follows.
It is as follows.

It is possible to prevent damage to the probe when carrying out handling while holding the probe surface on which the probe is formed.

When carrying out handling while holding the probe surface on which the probe is formed, it is possible to prevent damage to the probe without adding a new step.

A reliable semiconductor inspection device without probe damage can be used to perform a reliable inspection of the semiconductor device.

[Brief description of drawings]

FIG. 1 is a sectional view showing a section of a substrate made of silicon.

FIG. 2 is a cross-sectional view showing a state in which a silicon dioxide film is formed on both surfaces of a substrate.

FIG. 3 is a cross-sectional view showing a state in which a patterned resist film is formed on one surface of a substrate.

FIG. 4 is a cross-sectional view showing a state where a silicon dioxide film formed on one surface of a substrate is etched.

FIG. 5 is a cross-sectional view showing a state in which a patterned resist film is removed.

FIG. 6 is a cross-sectional view showing a state where silicon is etched.

FIG. 7 is a cross-sectional view showing a state in which a silicon dioxide film is removed.

FIG. 8 is a cross-sectional view showing a state in which a silicon dioxide film is formed.

FIG. 9 is a cross-sectional view showing a state where a resist film is formed in a region where a probe is formed.

FIG. 10 is a cross-sectional view showing a state in which the silicon dioxide film is removed.

FIG. 11 is a cross-sectional view showing a state where the resist film is removed.

FIG. 12 is a cross-sectional view showing a state in which a patterned resist film is formed on the non-probe surface.

FIG. 13 is a cross-sectional view showing a state where the silicon dioxide film is removed.

FIG. 14 is a cross-sectional view showing a state where the patterned resist film is removed.

FIG. 15 is a cross-sectional view showing a state in which a positioning groove and a beam are formed.

FIG. 16 is a cross-sectional view showing a state in which a through hole and a wiring are formed.

FIG. 17 is a view showing a state in which the probe protection protrusion is being removed by etching using a KOH solution.

FIG. 18 is a diagram showing a state where the probe protection protrusion is being removed by etching using a KOH solution.

FIG. 19 is a diagram showing a state in which the probe protection protrusion is being removed by etching using a KOH solution.

FIG. 20 is a diagram showing a state in which the probe protection protrusion is being removed by etching using a KOH solution.

FIG. 21 is a diagram showing a state where the probe protection protrusion is being removed by etching using a KOH solution.

FIG. 22 is a diagram showing a state where the probe protection protrusion is being removed by etching using a KOH solution.

FIG. 23 is a cross-sectional view showing a state in which the probe of the silicon contactor is brought into contact with the inspection target.

FIG. 24 is a flowchart showing an example of a semiconductor device manufacturing method including an inspection process using the semiconductor inspection device manufactured by the semiconductor inspection device manufacturing method according to the embodiment of the present invention.

[Explanation of symbols]

1 substrate 2 Silicon dioxide film 3 Resist film 4 probes 5 Probe protection protrusion 6 Silicon dioxide film 7 Resist film 8 Resist film 9 Positioning groove 10 grooves 11 wiring 12 wiring 13 Silicon contactor positioning frame 14 electrode pads 15 wafers

Continued front page    (72) Inventor Kenji Kawakami             5-20-1 Kamimizuhonmachi, Kodaira-shi, Tokyo Stock             Ceremony Company within Hitachi Semiconductor Group F-term (reference) 2G011 AA15 AA21 AB06 AD01 AE02                       AF07                 4M106 AA01 BA01 DD03 DD10 DD16

Claims (4)

[Claims] 1. A probe forming step of forming a probe to be brought into contact with an object to be inspected on one surface of a substrate made of silicon, and holding the probe surface formed with the probe in the probe forming step, the surface opposite to the probe surface. A non-probe surface processing step of processing a non-probe surface, which is the surface of, and a positioning groove forming step of forming a positioning groove for positioning the probe formed by the probe forming step. And a protrusion forming step of forming a protrusion on the surface side on which the probe is formed by the probe forming step, and the non-probe surface processing step holds the probe surface on which the protrusion is formed by the protrusion forming step. Then, the non-probe surface is processed, and the positioning groove forming step is performed by removing the protrusion formed in the protrusion forming step. Manufacturing method of the semiconductor inspection device characterized by removed by. 2. A probe forming step of forming a probe to be brought into contact with an object to be inspected on one surface of a substrate made of silicon, and holding the probe surface formed with the probe in the probe forming step, the surface opposite to the probe surface. A non-probe surface processing step of processing a non-probe surface, which is the surface of, and a positioning groove forming step of forming a positioning groove for positioning the probe formed by the probe forming step. There is a protrusion forming step of forming a protrusion having an area larger than the area of the tip of the probe formed in the probe forming step on the surface side on which the probe is formed by the probe forming step, In the probe surface processing step, the probe surface on which the protrusion is formed in the protrusion forming step is held and Processing the blanking surface, the positioning groove forming step, the manufacturing method of the semiconductor inspection device characterized by removing the protrusions formed by the projection forming step. 3. A probe forming step of forming a probe to be brought into contact with an inspection target on one surface of a substrate made of silicon, and holding the probe surface formed with the probe in the probe forming step, the surface opposite to the probe surface. A non-probe surface processing step of processing a non-probe surface, which is the surface of, and a positioning groove forming step of forming a positioning groove for positioning the probe formed by the probe forming step. And a protrusion forming step of forming a protrusion on the surface side on which the probe is formed by the probe forming step, and the non-probe surface processing step holds the probe surface on which the protrusion is formed by the protrusion forming step. Then, the non-probe surface is processed, and the positioning groove forming step is performed by removing the protrusion formed in the protrusion forming step. Manufacturing method of the semiconductor inspection apparatus and removing by anisotropic etching the etching rate varies depending on the direction. 4. A probe forming step of forming a probe to be brought into contact with an object to be inspected on one surface of a substrate made of silicon, and holding the probe surface formed with the probe by the probe forming step, the surface opposite to the probe surface. Inspection device formed by including a non-probe surface processing step of processing a non-probe surface which is a surface of a substrate, and a positioning groove forming step of forming a positioning groove for positioning the probe formed by the probe forming step. A method of manufacturing a semiconductor device having an inspection step of inspecting an electric characteristic of a semiconductor device using, wherein the probe forming step includes a protrusion forming step of forming a protrusion on a surface on which a probe is formed, The non-probe surface processing step holds the non-probe surface by holding the probe surface on which the projection is formed by the projection forming step. Engineering, and the positioning groove forming step, a method of manufacturing a semiconductor device characterized by the removal of protrusions formed by the projection forming step.