JP2003084687A - Semiconductor device and method of fabricating the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of realizing a semiconductor device having a structure capable of attaining the compatibility of a sufficient holding capacity with sufficient light shielding property without lowering the aperture ratio. SOLUTION: A lower light shielding film is formed on a substrate and TFTs are formed on this lower light shielding film. An upper light shielding film is formed so as to cap the TFTs across an interlayer insulating film on the TFTs. As a result, the TFTs can be completely shielded from light by the upper light shielding film and the lower light shielding film and the generation of a light leakage current can be hindered.

Description

Detailed Description of the Invention

[0001]

The present invention relates to a semiconductor layer including a channel forming region, a source region and a drain region,
In particular, it relates to a semiconductor element using a crystalline semiconductor film, typically a thin film transistor (TFT). Further, the present invention relates to a semiconductor device (in particular, a liquid crystal display device or a light emitting device) using such a TFT for a driving circuit or a switching element of a pixel, and a manufacturing technique thereof.
Further, in particular, the present invention relates to a semiconductor device having a structure with an improved light-shielding property and a manufacturing technique thereof.

[0002]

2. Description of the Related Art In recent years, liquid crystal projectors that take advantage of their small size and light weight have come to be used in various situations. In line with this, there is intense competition for development to provide even smaller and lighter LCD projectors. These liquid crystal projectors are configured to project an image or the like displayed on the liquid crystal display device, and the display quality of the liquid crystal display device greatly affects the performance of the liquid crystal projector.

In a liquid crystal display device, liquid crystal is sealed between a substrate on which TFTs and pixel electrodes are formed (hereinafter referred to as TFT substrate) and a substrate on which counter electrodes are formed (hereinafter referred to as counter substrate), and pixel electrodes are formed. A mainstream method is to display an image by controlling the orientation of liquid crystal by an electric field between the counter electrode and the counter electrode.

As a liquid crystal display device, an active matrix type liquid crystal display device (liquid crystal panel) having millions of pixels in a pixel portion has been actively used in recent years. In such a liquid crystal panel, a TFT is provided in each pixel as a switching element for applying an electric potential to each pixel, each TFT is provided with a pixel electrode, and when the TFT is on, the potential of the pixel electrode is set. When is off, the electric potential of the pixel electrode is held by the electric charge stored in the storage capacitor element (hereinafter referred to as the storage capacitor).

Since the display quality is deteriorated when the potential of the pixel electrode fluctuates while the TFT is off, it is necessary to suppress the leak current of the TFT on the active matrix type TFT substrate and sufficiently secure the storage capacitance for each pixel. The amount of charge accumulated in the storage capacitor is required to be sufficiently larger than the amount of charge lost due to the leak current.

Further, in the case of a transmissive liquid crystal panel, in order to increase the brightness, an opening, that is, a region intended to control the display in a pixel (for example, in a transmissive display device, light is transmitted and displayed. In a reflective display device, light is reflected to contribute to display, and in a display device using an organic light emitting element, an organic light emitting layer sandwiched between electrodes emits light to contribute to display. Etc.) is required to be increased.

By the way, when the above-mentioned liquid crystal panel (particularly, a transmissive liquid crystal panel) is used in a liquid crystal projector, when light is incident on the semiconductor layer of the TFT, a leak current caused by photoexcitation (hereinafter referred to as a light leak current). Therefore, the liquid crystal panel is provided with a light-shielding layer because of the occurrence of the above phenomenon. For example, when the light source of the projector is arranged on the counter substrate side, a light blocking layer is formed between the pixel electrode and the TFT to block light from the light source, or a light blocking layer is formed between the substrate and the semiconductor layer. For example, the light reflected by the projection lens is blocked. In addition, JP 2000
In Japanese Patent Laid-Open No. 164875, a recess is provided in a substrate, a lower light-shielding film is formed on the entire inner wall surface of the recess, and a channel forming region of a TFT is formed so as to be buried in the recess. Also,
An upper light shielding film is also formed together.

However, in the structure disclosed in the above publication,
Since unevenness is formed in the vicinity of the TFT where various wirings are concentrated, there is a high possibility that the yield will be lowered because wiring short-circuiting or disconnection is likely to occur in wiring formation, and electric field concentration is likely to cause deterioration.

Further, in the structure disclosed in the above publication, there is a gap between the upper light-shielding film and the lower light-shielding film, and in such a structure, light leakage current due to stray light may occur. Further, since the recess is provided in the substrate, the mechanical strength of the substrate may be weakened.

[0010]

A projector, which is required to have high brightness and high definition, is trying to increase display brightness by first increasing the intensity of a lamp used as a light source, and a panel used for an optical system. Higher definition is attempted by increasing the number of pixels. However, in the conventional method of forming a light-shielding film between the pixel electrode and the TFT or forming a light-shielding film between the substrate and the semiconductor layer, the light diffracted at the end of the light-shielding film enters the semiconductor layer. Therefore, there is a problem that a light leak current is generated. Furthermore, as the brightness of the light source increases, the adverse effect of this diffracted light on the TFT is
It is becoming a level that cannot be ignored.

Further, by thinning the insulating film that separates the light-shielding film and the TFT, the intensity of the diffracted light at the position of the TFT can be reduced to a negligible level. There is a problem in that the parasitic capacitance generated between and increases, and the potential of the light-shielding film affects the operation of the TFT.

Although the problem that the diffracted light enters the TFT can be solved by widening the width of the light shielding film, naturally, the reduction of the aperture ratio cannot be denied. Moreover, since the demand for higher definition of the display is met by increasing the number of pixels, the size of each pixel is shrinking, and the aperture ratio is reduced by widening the width of the light shielding film, and the resulting brightness is reduced. Is a big problem.

Further, it is not possible to solve the problem that stray light due to unintended scattering in the interlayer insulating film enters the TFT (particularly the semiconductor layer) only by widening the width of the light shielding film.
With the high brightness of the light source as described above, the influence of stray light cannot be ignored.

Further, a TFT including an active layer having a crystal structure, which has been actively used due to its high field-effect mobility, has a light leak current larger than that of a TFT including an amorphous semiconductor layer. If the storage capacitor does not have a sufficient storage capacity, the stored charge decreases due to the leak current, and the amount of transmitted light changes, which causes a reduction in the contrast of image display. Therefore, it is necessary to form a storage capacitor element capable of ensuring a sufficient capacity in the liquid crystal panel.

However, if the area of the storage capacitor is expanded in plan in order to secure a sufficient capacity, the ratio of the storage capacitor element to the area of the pixel becomes large and the aperture ratio decreases.

Furthermore, in order to improve the yield, it is necessary to have a structure in which disconnection of the wiring does not occur due to unevenness due to the storage capacitance.

In view of the above problems, the present invention provides a method for realizing a semiconductor device having a structure capable of achieving both a sufficient light-shielding property and a sufficient storage capacitance without reducing the aperture ratio. The challenge is to provide.

[0018]

In order to solve the above problems, the present inventor reduces the diffracted light and stray light incident on the semiconductor layer of the TFT by forming a light shielding film so as to cover the TFT. I thought about the structure.

An example of the structure of a pixel adopting the present invention is shown in FIG.
It shows in (A). A light shielding film is formed between the pixel electrode and the TFT. In this specification, the light-shielding film formed at least partially between the pixel electrode and the TFT is referred to as an upper light-shielding film.
The area where light is transmitted in the pixel and the display is controlled and the TFT
A groove is formed between the first and second electrodes and a conductive film to be an upper light-shielding film is formed. Unlike the light-shielding film that is conventionally formed between the TFT and the pixel electrode, the upper light-shielding film is continuously formed from the area between the pixel electrode and the TFT to the region through which light passes, and the TFT is formed by the upper insulating film. It is a fitted structure.

Another structure of a TFT adopting another invention is shown in FIG. A TFT including a semiconductor layer, a gate insulating film, and a gate electrode is formed, and after forming an interlayer insulating film, the gate insulating film and the interlayer insulating film in a region where light is transmitted and a display is controlled and a peripheral region thereof are removed. . In this specification, a hole-shaped region (having a wall surface and a bottom surface) in which a part of the gate insulating film and the interlayer insulating film is removed,
A region having substantially the same area as a region (opening) intended to control display in the display device is referred to as a hole or a window for simplicity. An upper light-shielding film and an insulating film are formed on the wall surface of the window, and although the opening area is smaller than the window area by the film thickness, the window area and the opening area are substantially the same. It can be said that the area.

Here, the window shown in FIG.
Since the window has a smaller aspect ratio than the groove of (A), it is easy to form the upper light-shielding film. Then
The light-shielding film is continuously formed from above the TFT so as to cover the side surface of the window. Then, after removing the light-shielding film formed on the bottom surface of the window (particularly the area through which light is transmitted), an insulating film is formed and the window is flattened using a transparent organic resin film such as acrylic. Next, an insulating film is formed so that the light-shielding film and the pixel electrode do not come into contact with each other, and the pixel electrode is further formed. The TFT is fitted by the upper light-shielding film, the interlayer insulating film is removed to form a window, and the window is flattened by the translucent organic resin insulating film.

In the case of the above structure, a region (window) in which a part of the gate insulating film and the interlayer insulating film is removed
Area of the pixel is almost equal to the area (opening) intended to control the display, and the area (opening) intended to control the display is at least the gate insulating film and the interlayer. The area is narrower than the area (window) where a part of the insulating film is removed.

Another structure of a pixel adopting another invention is shown in FIG.
It shows in (C). In the example shown in FIG. 1C, in order to also block light incident from the substrate side, before forming the semiconductor layer,
A light shielding film is formed between the substrate and the semiconductor layer. The light-shielding film formed between the substrate and the semiconductor layer is hereinafter referred to as a lower light-shielding film in this specification. Then, a TFT including a semiconductor layer, a gate insulating film and a gate electrode is formed,
After forming the interlayer insulating film, a gate insulating film formed in a region to be a region for controlling display later and its peripheral region,
The interlayer insulating film is removed to form a window. Then
The light-shielding film is continuously formed from above the TFT to the window. Then, the lower light shielding film and the upper light shielding film formed on the bottom surface of the window are removed to form an opening (a region intended to control the display). Then
An insulating film is formed and the window is flattened using a transparent organic resin film such as acrylic. Next, after forming an insulating film so that the light-shielding film and the pixel electrode do not come into contact with each other, the pixel electrode is formed. In this structure, the TFT is covered with the upper light-shielding film and completely shielded by the lower light-shielding film and the upper light-shielding film. The TFT can be electrically shielded by setting the lower light shielding film and the upper light shielding film to the ground potential.

Further, when a color filter is formed on the counter substrate side, there is a problem that the precision of aligning the TFT substrate and the counter substrate becomes strict due to a decrease in pixel size due to higher definition. Therefore, TFT
Although a method of forming a color filter on the substrate side has been considered, in order to align the liquid crystal, it is necessary to form the pixel electrode after forming the color filter. But,
The color filter needs to have a thickness of 1 μm or more, and it has been difficult to electrically connect the pixel electrode and the drain electrode separated by the color filter.

Therefore, in the example shown in FIG. 1B and FIG. 1C, the flattening of the window is performed by R (red) and G.
By using a photoresist film colored (green) or B (blue), the same function as that of the color filter formed on the counter substrate can be obtained.

Although not shown, in the structures of FIGS. 1B and 1C, the upper light-shielding film is made of a material having a high reflectance such as aluminum, and at least a part of the gate insulating film and the interlayer insulating film is removed. If the upper light-shielding film on the bottom surface of the formed region (window) is not removed and is used as a reflector, a reflective display device can be obtained.

The present invention provides a TFT on a substrate and the TFT
In a semiconductor device having a pixel electrode electrically connected to the pixel and a light-shielding film between the TFT and the pixel electrode, at least one interlayer insulating film is formed on the TFT, A window formed by removing the interlayer insulating film is provided between the electrode and the substrate, and the light-shielding film is continuous from the bottom surface of the window onto the interlayer insulating film so as to cover the TFT. Are formed on the
The area of the window is substantially equal to the area of the opening.

Further, according to the present invention, the lower light-shielding film on the substrate, the TFT on the lower light-shielding film, the pixel electrode electrically connected to the TFT, and the upper light-shielding between the TFT and the pixel electrode. A semiconductor device having a film,
At least one layer of interlayer insulating film is formed on the FT, and a window is formed between the pixel electrode and the substrate by removing the interlayer insulating film. It is characterized in that it is continuously formed from the bottom surface to the interlayer insulating film so as to cover the TFT, and the area of the window is substantially equal to the area of the opening.

The present invention also provides a lower light-shielding film on a substrate, a TFT on the lower light-shielding film, a pixel electrode electrically connected to the TFT, and an upper light-shielding film between the TFT and the pixel electrode. A semiconductor device having a film,
At least one layer of interlayer insulating film is formed on the FT, and a window is formed between the pixel electrode and the substrate by removing the interlayer insulating film. It is characterized in that it is continuously formed from the bottom surface to the interlayer insulating film so as to cover the TFT, and the lower light shielding film and the upper light shielding film are in contact with each other at the bottom surface of the window.

Further, according to the present invention, a lower light-shielding film on a substrate, a TFT on the lower light-shielding film, a storage capacitor element formed in parallel with the TFT, and a pixel electrode electrically connected to the TFT. A semiconductor device having an upper light-shielding film between the TFT and the pixel electrode, at least one layer of an interlayer insulating film is formed on the TFT and the storage capacitor element, and the pixel electrode and the A window formed by removing the interlayer insulating film is formed between the substrate and the substrate, and the lower light-shielding film and the upper light-shielding film are in contact with each other at the bottom surface of the window.

The present invention also provides a TFT on a substrate and the above-mentioned TF.
In a semiconductor device having a pixel electrode electrically connected to T and a light-shielding film between the TFT and the pixel electrode, at least one interlayer insulating film is formed on the TFT, A window formed by removing the interlayer insulating film is provided between the pixel electrode and the substrate, the window is planarized by a translucent organic insulating film, and the light shielding film is a bottom surface of the window. From the TFT
Is continuously formed to cover the interlayer insulating film.

Further, according to the present invention, a lower light-shielding film on a substrate, a TFT on the lower light-shielding film, a pixel electrode electrically connected to the TFT, and a plurality of TFTs are provided between the TFT and the pixel electrode. And a laminated body in which an upper light-shielding film and an insulating film are alternately laminated, and at least one interlayer insulating film is formed on the TFT, and the interlayer insulating film is formed between the pixel electrode and the substrate. There is a window formed by removing the interlayer insulating film, the window is planarized by a light-transmitting organic insulating film, and the plurality of stacked upper light-shielding films are formed from the bottom surface of the window to the TFT. It is characterized in that it is formed so as to be fitted.

Further, according to the present invention, a lower light-shielding film on a substrate, a TFT on the lower light-shielding film, a pixel electrode electrically connected to the TFT, and a plurality of pixels between the TFT and the pixel electrode. In a semiconductor device having a stacked body in which an upper light-shielding film and an insulating film are alternately stacked, at least one interlayer insulating film is formed on the TFT, and the interlayer insulating film is formed between the pixel electrode and the substrate. A window is formed by removing the interlayer insulating film, the window is planarized by a translucent organic insulating film, and the stacked upper light-shielding films cover the TFT from the bottom surface of the window. It is characterized in that it is formed so as to fit, and at least one upper light-shielding film of the stacked body electrically connects the TFT and the pixel electrode.

Further, according to the present invention, a lower light-shielding film on a substrate, a TFT on the lower light-shielding film, a pixel electrode electrically connected to the TFT, and a plurality of TFTs are provided between the TFT and the pixel electrode. In a semiconductor device having a stacked body in which an upper light-shielding film and an insulating film are alternately stacked, at least one interlayer insulating film is formed on the TFT, and the interlayer insulating film is formed between the pixel electrode and the base. A window is formed by removing the interlayer insulating film, the window is planarized by a translucent organic insulating film, and the stacked upper light-shielding films cover the TFT from the bottom surface of the window. It is characterized in that it is formed so as to fit, and in the laminated body, a storage capacitor is formed by the insulating film and the plurality of upper light-shielding films formed via the insulating film.

The present invention also provides a TFT on a substrate and the above-mentioned TF.
A semiconductor device comprising: a pixel electrode electrically connected to T; and a stacked body in which a plurality of upper light-shielding films and insulating films are alternately stacked between the TFT and the pixel electrode. An interlayer insulating film of at least one layer is formed thereon, and a window formed by removing the interlayer insulating film is provided between the pixel electrode and the substrate to electrically connect the TFT and the pixel electrode. The wiring connected to is one layer of the upper light-shielding film formed so as to cover the TFT from the bottom surface of the window, and the area of the window is almost equal to the area intended to control the display in the pixel. Characterized by equality.

In the above invention, the substrate and the T
It is characterized in that a lower light-shielding film is formed between it and the FT.

In the above invention, the first layer of the upper light-shielding film and the lower light-shielding film are in contact with each other at the bottom of the window between the pixel electrode and the substrate.

Further, in the above invention, the window is formed with a photoresist film colored R (red), G (green) and B (blue) and a translucent organic insulating film. To do.

The present invention also includes the steps of forming a semiconductor layer on an insulating surface, forming a gate insulating film on the semiconductor layer, forming a gate electrode on the gate insulating film, and forming a gate electrode on the gate electrode. Forming a first interlayer insulating film, forming a second interlayer insulating film on the first interlayer insulating film, forming a first contact hole reaching the semiconductor layer, and electrically connecting each TFT. A step of forming a wiring for connecting to the wiring, a step of forming a third interlayer insulating film so as to cover the wiring, and a step of forming a groove reaching the substrate between the light transmitting region and the TFT. A step of continuously forming a light shielding film from the third interlayer insulating film to the groove; a step of forming a second contact hole for connecting a pixel electrode and a wiring; and a fourth step on the light shielding film. Before the step of forming the interlayer insulating film Removing a portion of said second contact hole formed an insulating film to expose the wire, characterized in that it comprises a step of forming the pixel electrode.

Further, according to the present invention, a step of forming a semiconductor layer on an insulating surface, a step of forming a gate insulating film on the semiconductor layer, a step of forming a gate electrode on the gate insulating film, and the gate electrode Forming a first interlayer insulating film thereon, forming a second interlayer insulating film on the first interlayer insulating film, forming a first contact hole reaching the semiconductor layer, and electrically connecting each TFT. A wiring for electrical connection, a step of forming a third interlayer insulating film so as to cover the wiring, a base insulating film, a gate insulating film, a first interlayer insulating film in a region where light is transmitted, Removing the second interlayer insulating film to form a window reaching the substrate;
Forming an upper light-shielding film on the interlayer insulating film so as to fit the TFT, removing the lower light-shielding film formed on the bottom surface of the window, and forming a second contact hole in the upper light-shielding film. And a fourth step on the upper light-shielding film.
A step of forming an interlayer insulating film, a step of flattening the window with an insulating film having a light transmitting property, a step of forming a fifth interlayer insulating film on the upper light shielding film, and a step of exposing the wiring. And a step of removing a part of the insulating film buried in the second contact hole, and a step of forming a pixel electrode on the fifth interlayer insulating film.

The present invention also provides a step of forming a semiconductor layer on the insulating surface, a step of forming a gate insulating film on the semiconductor layer, a step of forming a gate electrode on the gate insulating film, and the gate. Forming a first interlayer insulating film on the electrodes; forming a second interlayer insulating film on the first interlayer insulating film; forming a first contact hole reaching the semiconductor layer; A step of forming wiring for electrical connection, a step of forming a third interlayer insulating film so as to cover the wiring, a base insulating film in a region where light is transmitted,
Removing the gate insulating film, the first interlayer insulating film, and the second interlayer insulating film to form a window reaching the substrate; and forming an upper first light-shielding film so as to cover the TFT on the third interlayer insulating film. Forming step, forming a second contact hole in the upper first light-shielding film and the third interlayer insulating film to reach the wiring, and forming a first insulating film on the upper first light-shielding film A step of partially removing the first insulating film buried in the second contact hole so that the wiring is exposed; a step of forming an upper second light-shielding film on the first insulating film; Forming a second insulating film on the upper second light-shielding film, forming an upper third light-shielding film on the second insulating film, a lower light-shielding film formed on the bottom surface of the window, and the upper first light-shielding film. Light shielding film, the first insulating film, the upper second light shielding film, the front Removing the second insulating film and the upper third light-shielding film, forming a third contact hole reaching the upper second light-shielding film in the upper third light-shielding film and the second insulating film, A step of forming a fourth interlayer insulating film, a step of planarizing the window with an insulating film having a light transmitting property, a step of forming a fifth interlayer insulating film on the upper third light shielding film, and a step of forming the upper second insulating film. A step of removing a part of the insulating film buried in the third contact hole so that the light-shielding film is exposed; and a step of forming a pixel electrode on the fifth interlayer insulating film. .

Further, the above invention is characterized by including a step of forming a lower light-shielding film on the insulating surface.

In the above invention, the lower light-shielding film,
The first upper light-shielding film and the third upper light-shielding film,
A feature of the present invention is that a wiring that connects to a ground potential is connected.

Further, in the above invention, the lower light-shielding film and the upper light-shielding film are formed so as to be in contact with each other at the bottom surface of the window.

Further, in the above invention, the step of flattening the window is performed using an organic insulating film.

Further, in the above invention, the step of flattening the window includes R (red), G (green) or B.
It is characterized in that a (blue) colored photoresist film and a transparent organic insulating film are laminated.

In the above invention, the semiconductor layer is
It is characterized in that it is crystallized by irradiation with laser light.

In the above invention, the semiconductor layer is
A crystalline semiconductor film obtained by crystallization using a catalytic element and then gettering the catalytic element to reduce the concentration of the catalytic element in the semiconductor layer.

As described above, the present invention has a structure in which the TFT is covered with a light-shielding film in order to prevent a light leak current generated by light such as diffracted light or stray light that unintentionally enters the semiconductor layer of the TFT. .

[0050]

BEST MODE FOR CARRYING OUT THE INVENTION (Embodiment 1) A structure of a transmission type liquid crystal display device manufactured by using the present invention will be described with reference to FIG.

The base insulating film 11 is formed on the substrate 10, and the TFT including the semiconductor layer 12, the gate insulating film 13, and the gate electrode 14 is formed on the base insulating film 11. A first interlayer insulating film 15 and a second interlayer insulating film 15 are formed on the gate electrode 14.
The interlayer insulating film 16 is formed. The second interlayer insulating film 16 is planarized if necessary. Subsequently, the wiring 17 that electrically connects each TFT is formed by connecting to the source region or the drain region of the semiconductor layer 12. Cover the wiring 17,
After forming the third interlayer insulating film 18, a groove is formed at the boundary between the TFT and the opening. The groove is formed so as to reach the substrate. Then, a conductive film is continuously formed in the groove from above the third interlayer insulating film 18 by the metal CVD method to form the light shielding film 19. Then, after forming the fourth interlayer insulating film 20,
The pixel electrode 21 is formed so as not to contact the light shielding film 19.

A region 22 continuous from the semiconductor layer 12
The storage capacitor 202 is formed by (one electrode of the storage capacitor), the insulating film 23 (dielectric) in the same layer as the gate insulating film 13, and the capacitor wiring 24 (the other electrode of the storage capacitor) in the same layer as the gate electrode 14. Has been done.

In the semiconductor device of the present invention, in each pixel of the pixel portion, the TFT 20 is removed from between the TFT 201 and the pixel electrode.
1 covered with a light-shielding film 19 which is continuously formed up to a boundary between 1 and an opening (a region intended to control display)
In a region having T201 and transmitting light of the pixel, the base insulating film 11, the gate insulating film 13, the first interlayer insulating film 15, the second interlayer insulating film 16, and the third insulating film are provided between the pixel electrode and the substrate. This is a structure in which the interlayer insulating film 18 and the fourth interlayer insulating film 20 are stacked.

Further, the TFT having the structure shown in FIG. 1A may have a structure in which a light shielding film (lower light shielding film) is provided between the substrate 10 and the semiconductor layer 12. In this case, the depth of the groove filled with the light shielding film may be appropriately determined by the practitioner,
The depth may reach or may not reach the lower light shielding film.

(Embodiment 2) Another structure of the TFT of the present invention will be described with reference to FIG. Note that the same reference numerals are used to indicate the same parts as those in FIG.

The base insulating film 11 is formed on the substrate 10, and the TFT including the semiconductor layer 12, the gate insulating film 13, and the gate electrode 14 is formed on the base insulating film 11. A first interlayer insulating film 15 and a second interlayer insulating film 15 are formed on the gate electrode 14.
The interlayer insulating film 16 is formed. Second, if necessary
The interlayer insulating film 16 is flattened. Subsequently, the wiring 17 that electrically connects each TFT is formed by connecting to the source region or the drain region of the semiconductor layer 12. After forming the third interlayer insulating film 18 so as to cover the wiring 17, the third interlayer insulating film 18 is formed in a region slightly wider than the opening (region intended to control display).
The interlayer insulating film 18, the second interlayer insulating film 16, the first interlayer insulating film 15, the gate insulating film 13 and the base insulating film 11 are removed. Then, a conductive film is continuously formed on the third interlayer insulating film 18 along the side surface of the region (window) where the gate insulating film and the interlayer insulating film are removed, and the upper light-shielding film 19 is formed. Then, the upper light-shielding film 19 formed on the bottom surface of the window is removed, and the fourth interlayer insulating film 20 is formed. After that, the window is flattened with a light-transmissive organic insulating film 30 and the fifth interlayer insulating film 31 is formed thereon to form a pixel electrode 32.

In the TFT of the present invention, a light-shielding film is formed so as to cover the TFT from the bottom surface of a region (window) where at least a part of the gate insulating film and the interlayer insulating film is removed, and the inside of the window is formed. , There is an opening. In this embodiment, since the window has a small aspect ratio, the upper light-shielding film 19 can be provided with good coverage even if the sputtering method, which is simpler than the metal CVD method, is used.

Further, since the TFT can be covered with the light shielding film, it is possible to suppress the generation of light leak current.

(Embodiment 3) Another structure of the TFT of the present invention will be described with reference to FIG.

A lower light-shielding film 101 is formed on a substrate 100, and a base insulating film 102, a semiconductor layer 103, and a gate insulating film 104 are sequentially formed on the lower light-shielding film 101. A gate electrode 105 is formed over the gate insulating film 104, a first interlayer insulating film 107 and a second interlayer insulating film 108 are formed over the gate electrode 105, and a second interlayer insulating film is formed over the second interlayer insulating film. The wiring 109 connected to the source region or the drain region of the semiconductor layer 103 is formed, and the wiring 10
A third interlayer insulating film 110 is formed so as to cover 9. In addition, the upper light-shielding film 1 is formed on the third interlayer insulating film 110.
11 is provided.

The insulating film 11 is formed on the upper light-shielding film 111.
The pixel electrode 114 is formed through the line 2. The pixel electrode 114 includes the upper light-shielding film 111 and the third interlayer insulating film 1.
Through the contact hole formed in 10, the wiring is connected to the drain region of the TFT. The storage capacitor 202 includes the semiconductor layer 120 and the insulating film 121.
And capacitance wiring 106. The semiconductor layer 120 is formed continuously from the drain region and serves as one electrode of the storage capacitor. The insulating film 121 in the same layer as the gate insulating film serves as a dielectric of the storage capacitor, and the capacitor wiring 106 formed in the same layer as the gate electrode serves as the other electrode of the storage capacitor.

Such a TFT 201 and a storage capacitor 202 are formed in each pixel. The opening is
The third interlayer insulating film 110, the second interlayer insulating film 108, the first interlayer insulating film 107, the gate insulating film 104, and the lower light shielding film 101 are formed inside the removed window. Further, an upper light-shielding film is formed continuously from the second interlayer insulating film 108 to the wall surface of the window. However, the upper light-shielding film formed on the bottom surface of the window is removed.

The lower light-shielding film 101 and the upper light-shielding film 111 are formed in contact with each other at the bottom of the window so as to have the same ground potential, and are connected to a wiring (not shown) for applying the ground potential.

The window is planarized by using an organic insulating film 115 such as acrylic. In addition, after planarization, the pixel electrode 114 is formed. The pixel electrode 114 is electrically connected to the wiring connected to the drain region of the semiconductor layer 103, and the TFT 201 and the pixel electrode 114 are electrically connected.

As described above, the upper light shielding film 111 is formed so as to cover the TFT of the pixel portion, and the lower light shielding film 101 is formed.
Further, it is possible to manufacture a liquid crystal panel which is completely shielded by the upper light shielding film 111.

[0066]

EXAMPLES Example 1 In this example, a process of manufacturing an active matrix substrate using the present invention will be described.

First, the lower light-shielding film 30 is formed on the quartz substrate 300.
In order to form No. 1, a polysilicon film and a WSix film are laminated and formed. Note that the lower light-blocking film 301 has a light-blocking property that satisfies a required level, heat resistance that can withstand heat treatment for activating a TFT is essential, and it is preferable that the lower light-blocking film 301 be a ground potential. Preferably there is. Therefore, the film used as the lower light-shielding film is a polysilicon film, a WSix (x = 2.0 to 2.8) film, Al, Ta,
Any one kind or plural kinds of films made of a conductive material such as W, Cr, and Mo may be used (FIG. 2A).

Subsequently, a base insulating film 302 is formed on the lower light shielding film 301. As the base insulating film 302, an insulating film containing silicon (for example, a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or the like) is formed by an LPCVD method or plasma C.
It is formed by the VD method or the sputtering method. Then, an amorphous semiconductor film (not shown) is formed over the base insulating film 302. The amorphous semiconductor film is not particularly limited, but a silicon film or silicon germanium (Si _x Ge _1-x : 0) is used.
<X <1, typically x = 0.001 to 0.05). Note that here, an amorphous silicon film is formed to a thickness of 65 nm.

Next, the amorphous silicon film is crystallized. Heat treatment at 600 ℃ for 24 hours using a furnace,
A crystalline silicon film (not shown) is formed. Although a silicon oxide film is formed on the surface of the silicon film in this crystallization process, there is no problem because it is a very thin film that can be removed by etching or the like.

Next, after removing the oxide film formed on the surface of the crystalline silicon film, a heat treatment for improving the film quality of the semiconductor film is performed before forming the gate insulating film 304. Heat treatment of the crystalline silicon film at 900 to 1050 ° C.,
An oxide film is formed on the surface of the crystalline semiconductor film. This silicon oxide film is removed. The silicon oxide film may be formed on the surface of the crystalline silicon film by heat treatment so that the thickness of the crystalline silicon film is finally 30 to 50 nm. In this embodiment, the thickness of the crystalline silicon film is 3
5 nm. Subsequently, the obtained crystalline silicon film is formed into a desired shape, and a semiconductor having a region including a channel formation region, a source region, and a drain region of a TFT later and a region serving as a wiring to be one electrode of a storage capacitor. Layer 30
3 is formed.

Next, the gate insulating film 304 is formed on the semiconductor layer.
Are formed (FIG. 2 (B)). Then, the gate insulating film 30
An impurity element imparting p-type (hereinafter, referred to as p-type impurity element) is added to the semiconductor layer in the region to be the n-channel TFT through the step 4. As the p-type impurity element, an element typically belonging to Group 13 of the periodic table, typically boron (B) or gallium (Ga) can be used. This step is performed to control the threshold voltage of the TFT and is called a channel doping step. By this step, the p-type impurity element in the semiconductor layer is 1 × 10 ¹⁵ to
It is added at a concentration of 1 × 10 ¹⁸ / cm ³ .

Next, a mask made of resist is formed, and an impurity element imparting n-type conductivity (hereinafter referred to as n-type impurity) to the semiconductor layer in the source region and drain region of the n-channel TFT and in a portion which will be one electrode of the storage capacitor. It is called an element.
Further, here, phosphorus is used) to form an n-type impurity region containing phosphorus at a high concentration. In this area, 1
Phosphorus is contained at a concentration of × 10 ^{20 to} 5 × 10 ²¹ / cm ³ .

Next, a gate electrode 305a and a wiring 305b (hereinafter referred to as a capacitance wiring) which serves as one electrode of the storage capacitor are formed. The materials for the gate electrode 305a and the capacitor wiring 305b are TaN, Ta, Ti, Mo,
W, Cr, Si doped with an impurity element, or the like can be used. Note that these plural kinds of films may be stacked to form a gate electrode.

Next, an n-type impurity element is added to the semiconductor layer using the gate electrode as a mask. Here, phosphorus is used as the n-type impurity element. The region to which the n-type impurity element is added is a low-concentration impurity region for functioning as an LDD region of the n-channel TFT, and the low-concentration n-type impurity region has a concentration of 1 × 10 ^{16 to} 5 × 10 ^18. / C
Included at a concentration of m ³ .

Then, a region to be an n-channel TFT later is covered with a mask, and boron is added as a p-type impurity element to the semiconductor layer to be a source region or a drain region of a later p-channel TFT by 3 × 10 ^{20 to} 5 ×. It is added so as to be contained at a concentration of 10 ²¹ / cm ³ (not shown).

Next, a silicon nitride film, a silicon oxide film, or a silicon nitride oxide film is formed as the first interlayer insulating film 306 by a plasma CVD method to have a film thickness of 50 to 500 nm.

After that, heat treatment is performed to activate the impurity element added to each semiconductor layer. As the heat treatment method, a method using a furnace, a method using laser light irradiation, a lamp annealing method, or a combination thereof may be performed. 550 to 550 in an inert gas atmosphere
Activation is performed at 1000 ° C.

Next, hydrogenation that terminates the dangling bonds in the semiconductor layer is performed with hydrogen that is thermally excited.
Heat treatment is performed at 410 ° C. for one hour in an atmosphere containing hydrogen. As another hydrogenation means, plasma hydrogenation treatment using hydrogen excited by plasma may be performed.

Then, a second interlayer insulating film 307 is formed to a film thickness of 50.
It is formed with a thickness of 0 to 1000 nm. The second interlayer insulating film 307 may be acrylic, polyimide, polyamide, BCB.
An organic resin film such as (benzocyclobutene) or an inorganic insulating film such as a silicon oxynitride film or a silicon nitride oxide film may be used. Note that in this embodiment, a silicon oxynitride film is formed to a thickness of 900 nm and planarized by a CMP method (FIG. 2C).

Subsequently, a first contact hole reaching the semiconductor layer 303 is formed, and a wiring 308 for electrically connecting each TFT is formed. As a material of the wiring 308, a conductive film containing titanium as a main component is formed in a film thickness of 50 to 100 n.
After forming the conductive film having a thickness of m, a conductive film containing aluminum as a main component may be formed to have a film thickness of 300 to 500 nm to have a stacked structure. However, it is necessary to use, for the uppermost layer in contact with the pixel electrode, a material that does not cause electrical corrosion when contacting with the pixel electrode.

Next, a third interlayer insulating film 309 is formed. The third interlayer insulating film 309 is formed with a thickness of 600 nm using a silicon oxynitride film (FIG. 3A).

Next, in a region that substantially coincides with the opening (region intended to control display), the interlayer insulating film, the gate insulating film and the base insulating film formed in the steps so far are removed to shield the lower light. Expose the membrane. Note that the region (window) from which the gate insulating film and the interlayer insulating film are removed is formed in a wider range than the region (opening) where light is actually transmitted.

Next, the upper light-shielding film 311 is formed. As the upper light-shielding film, a conductive film which does not transmit light and has conductivity is formed here with a film thickness of 100 to 200 nm containing aluminum as its main component. Since the window has a small depth-width ratio (aspect ratio) before the upper light-shielding film is formed, the conductive film can be formed with good coverage even by the sputtering method. The upper light-shielding film is formed so as to be in contact with the lower light-shielding film and have the same potential. Although not shown, the upper light-shielding film and the lower light-shielding film are connected to a wiring to which a ground potential is applied.

Next, the lower light-shielding film and the upper light-shielding film formed on the bottom surface of the window are removed, and the upper light-shielding film for forming the second contact hole for electrically connecting the drain electrode and the pixel electrode is removed. In both steps, etching is performed using the pattern formed of the resist as a mask. Since the height of the region to be etched is different and the laminated structure of the film to be removed is also different, the removal process is performed separately in order to simplify the process. However, it does not matter which step comes first (FIG. 14).

Then, plasma C is formed on the upper light-shielding film 311.
By the VD method, a silicon nitride film, a silicon oxynitride film,
Alternatively, the insulating film 312 made of a silicon oxynitride film or the like
After forming the window, a window is used to form an organic insulating film 3 such as acrylic.
It is flattened with 13 or the like (FIG. 3 (B)).

The window may be filled with a photoresist film colored in R, G, B, and then an organic resin film such as acrylic film may be formed. By using the colored layer for flattening the window, it is possible to solve the problem of color misregistration that occurs when the colored layer is provided on the counter substrate side.

Subsequently, a fourth interlayer insulating film 314 made of a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, or the like is formed by a sputtering method, and a part of the insulating film which fills the contact hole is formed. Is removed to expose the drain electrode, and then the pixel electrode 315 is formed. At this time, it is important to remove the insulating film so that the upper light shielding film 311 and the pixel electrode 315 do not come into contact with each other. Since a transmissive liquid crystal display device is manufactured in this embodiment, the material for forming the pixel electrode is a transparent IT.
An O film (a compound of indium oxide and tin oxide) is used to form a film having a thickness of 100 nm by a sputtering method (FIGS. 4 and 15). A reflective display device can be obtained by forming a light-shielding metal film instead of the ITO film, for example, a pixel electrode in which Al or a conductive material is plated with Ag. Also,
Without removing the upper light-shielding film formed on the bottom of the window,
You may use it as it is as a reflector. In this case, the liquid crystal is controlled by the transparent pixel electrode and the counter electrode formed on the flattening film.

Through the above steps, the TFT 32 including the base insulating film covered with the lower light-shielding film and the upper light-shielding film, the semiconductor layer, the gate insulating film, and the gate electrode is formed on the substrate.
0, and a storage capacitor 321 including a semiconductor layer that serves as one electrode, an insulating film that is the same layer as the gate insulating film that serves as a dielectric, and a capacitive wiring formed in the same layer as the gate electrode. The ratio of the area through which is transmitted (aperture ratio) is 5
It is possible to manufacture an active matrix substrate having a content of more than 0%.

On the active matrix substrate thus obtained, an alignment film for aligning a liquid crystal layer is formed,
The active matrix liquid crystal display device can be completed by injecting liquid crystal after the counter electrode and the counter substrate on which the alignment film is formed and the active matrix substrate are bonded by using a known cell assembly technique.

(Embodiment 2) In this embodiment, a region (window) in which at least a part of the gate insulating film and the interlayer insulating film is removed by forming a plurality of upper light-shielding films
A method of forming a storage capacitor along the wall surface of the will be described.

According to the manufacturing process shown in Example 1, FIG.
The lower light-shielding film on the bottom surface of the window shown in FIG. 5A is exposed (FIG. 5A).

Next, the upper first light-shielding film 401 is formed. As the upper first light-shielding film 401, a conductive film (a conductive film whose main component is an element selected from aluminum, chromium, and titanium) is formed with a film thickness of 100 to 200 nm. Then, the upper first light-shielding film 401 and the third interlayer insulating film 309.
Then, a second contact hole reaching the wiring 308 is formed. The first contact hole is a contact hole for connecting the wiring and the semiconductor layer.

Then, the first insulating film 4 made of a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, or the like is formed on the upper first light-shielding film 401 by a plasma CVD method or the like.
02 is formed.

Then, a part of the first insulating film filling the second contact hole is removed to remove the upper first light shielding film 40.
After exposing No. 1, an upper second light shielding film 403 is formed on the first insulating film 402. Since the upper second light-shielding film 403 is connected to the pixel electrode, it is formed by laminating a conductive film made of a material that does not cause electrical corrosion due to contact with the ITO film used as the pixel electrode. In this example,
After forming a conductive film containing aluminum as its main component, a conductive film containing tungsten as its main component is stacked on the side in contact with the pixel electrode. The thickness of the upper second light shielding film 403 is 100 to 200 nm. Then, a second insulating film 404 is formed on the upper second light shielding film 403 similarly to the first insulating film.

Next, an upper third light shielding film 405 is formed on the second insulating film 404. It should be noted that the upper third light-shielding film 301 and the upper first light-shielding film 401 are connected to the lower light-shielding film 301 or the upper first light-shielding film 401 so that they have the same potential (ground potential in this embodiment) as the lower light-shielding film 301 and the upper first light-shielding film 401. Make an electrical connection. Note that wiring may be connected so as to be at the ground potential by being connected in a region other than the pixel, which does not have a problem of reducing the aperture ratio due to the connection.

Then, a pixel electrode to be formed later and an upper second
Forming a third contact hole for establishing conduction with the light-shielding film 403, and a lower light-shielding film 301 on the bottom surface of the window, an upper first light-shielding film 401, an upper second light-shielding film 403, and an upper third light-shielding film.
The light shielding film 405 is removed.

Next, a fourth interlayer insulating film 406 is formed on the upper third light shielding film 405. The fourth interlayer insulating film 40
Similarly to the first insulating film 402 and the second insulating film 404, 6 is also formed by a plasma CVD method, and an insulating film selected from a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, or the like may be used.

Then, the window is flattened. The flattening film 407 may be formed using an organic insulating film such as acrylic as in the first embodiment. Further, as shown in Example 1, after filling the window with a photoresist film colored in R, G, and B, an organic resin film such as acrylic may be applied for planarization.

Subsequently, a fifth interlayer insulating film 408 made of a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, or the like was formed on the entire surface by a sputtering method to fill the third contact hole. A part of the insulating film is removed to expose the upper second light shielding film 403. Then, in order not to contact the upper second light shielding film 403,
The pixel electrode 409 is formed. As a material for forming the pixel electrode 409, a light-transmitting ITO film (a compound of indium oxide and tin oxide) is used and a film thickness is 100 nm by a sputtering method.
To form.

Through the above steps, the upper first light-shielding film 401
As one capacitance wiring, the first insulating film 402 as a dielectric, the upper second light-shielding film 403 as the other capacitance wiring, and the upper second light-shielding film 403 as one capacitance wiring. A second storage capacitor 503 using the second insulating film 404 as a dielectric and the upper third light-shielding film 405 as the other capacitance wiring is formed along the side surface of the window.
Although sufficient capacitance can be obtained with the first storage capacitor and the second storage capacitor, as in the first embodiment, the storage layer is composed of a semiconductor layer, an insulating film in the same layer as the gate insulating film, and a capacitive wiring in the same layer as the gate electrode. The capacitors may be formed together.

In order to further increase the capacitance of the storage capacitor element, after removing a part of the lower light-shielding film formed on the bottom surface of the window, the exposed substrate is ground to extend the storage capacitor element to the inside of the substrate. Good.

The wiring 308 and the upper second light-shielding film 40 are also provided.
3. The upper second light shielding film 403 and the pixel electrode 409 are connected to each other, and finally the pixel electrode 409 and the wiring 308 are electrically connected to each other, whereby the TFT 501 can be used as a pixel switching element. In addition, since the aspect ratio of the contact hole can be reduced by connecting the wiring and the pixel electrode in two steps through the upper light-shielding film as in the present embodiment, the processing is easy, and further, the film formation At this time, good coverage can be obtained even by the sputtering method. Further, the contact resistance can be reduced as compared with the case where the contact hole is thin and long. Also, the pixel electrode (ITO)
The position of the contact hole between the second upper light-shielding film and the second
If it is formed so as to be displaced from the position of the contact hole between the upper light-shielding film and the wiring, the light-shielding property will be improved, and the problem that a leak current will occur due to photoexcitation can be solved.

As described above, the plurality of upper light-shielding film layers are formed into TF.
Since the TFT can be completely shielded by forming T so as to be fitted and a storage capacitor having a sufficient capacity can be formed along the side surface of the window, the aperture ratio can be further increased. it can.

(Embodiment 3) In this embodiment, an example of an active matrix type liquid crystal display device manufactured by using the active matrix substrate manufactured by the embodiment 1 or 2 will be described.

In FIG. 7, the active matrix substrate is composed of a pixel portion formed on the substrate, a driving circuit and other signal processing circuits. TFT (pixel TF
(Also referred to as “T”) and a storage capacitor, and a drive circuit formed around the pixel portion is basically formed of a CMOS circuit.

Gate lines and source lines are formed extending from the driving circuit to the pixel portion and connected to the pixel TFT. Further, an FPC (flexible printed wiring board) is connected to an external input terminal and used to input an image signal or the like. The FPC is firmly adhered by a reinforcing resin and is connected to each drive circuit by connection wiring. Although not shown, a counter electrode is formed on the counter substrate.

Since the active matrix type liquid crystal display device formed by using the present invention is formed so that the light shielding film is fitted on the TFT, it is possible to suppress the generation of the light leak current due to the stray light, and High-quality display can be performed without changing the potential of the electrodes.

(Embodiment 4) A pixel having another structure according to the present invention will be described with reference to FIG.

The second interlayer insulating film 1 according to the process of the first embodiment.
Form up to 6. Then, in a step of forming a first contact hole reaching the semiconductor layer, a region through which light passes and the TFT
A groove is formed at the boundary between and, and a wiring 50 that electrically connects each TFT is formed. The wiring is continuously formed on the second interlayer insulating film so as to fill the groove.

Subsequently, a third interlayer insulating film 18 is formed and an upper light shielding film 19 is formed. Then, a second contact hole for connecting the pixel electrode and the wiring is formed, and a fourth interlayer insulating film 20 is formed. The pixel electrode 21 is formed after removing a part of the insulating film filled in the second contact hole to the extent that the light-shielding film and the pixel electrode are not in contact with each other.

Another example is shown in FIG. 13 (B). The second interlayer insulating film 16 is formed according to the process of the first embodiment, a contact hole reaching the semiconductor layer is subsequently formed, and the base insulating film 11 and the gate insulating film 1 in a region slightly wider than the opening are formed.
3, the first interlayer insulating film 15 and the second interlayer insulating film 16 are removed to form a window.

Subsequently, a wiring for electrically connecting each TFT is formed. The wiring is continuously formed on the second interlayer insulating film 16 along the wall surface of the window. After removing the wiring formed on the bottom surface of the window, the third interlayer insulating film 18
Then, the light shielding film 19 is formed. Then, the fourth
After forming the interlayer insulating film 20, the window flattening film 3
0 is formed, and the fifth interlayer insulating film 31 is formed. And
The pixel electrode 32 is formed after removing a part of the insulating film buried in the second contact hole to the extent that the light shielding film and the pixel electrode are not in contact with each other.

As described above, it is possible to shield the semiconductor layer of the TFT from light even by using the wiring and the light shielding film.

Example 5 In this example, a step of forming a crystalline semiconductor layer will be described.

A lower light-shielding film 1201 and a base insulating film 1202 are formed on the substrate 1200. Subsequently, an amorphous silicon film 1203 is formed as an amorphous semiconductor film over the base insulating film 1202. Then, the amorphous silicon film 120
3, a mask 1204 is formed, and a metal element having a function of promoting crystallization (hereinafter referred to as a catalyst element) is added to an amorphous silicon film exposed from an opening portion of the mask to form a catalyst-containing layer 1205. To do. As the catalytic element, Ni, Fe, Co, Ru, Rh, Pd,
It is a metal element such as Os, Pt, or Au. In this embodiment, nickel (Ni) is used as the catalytic element (FIG. 8).
(A)).

Then, at 600 ° C. (5
Heat treatment is performed at 00 to 700 ° C. for 12 hours (4 to 12 hours) to form a crystalline silicon film 1206 (FIG. 8).
(B)). Note that as a pretreatment for the heat treatment for crystallization, heat treatment at 450 ° C. for 1 hour may be performed in order to reduce hydrogen contained in the amorphous silicon film.
After heat treatment for crystallization, laser light irradiation may be performed to improve the crystallinity of the crystalline silicon film (FIG. 8C).

Next, heat treatment is performed to reduce the concentration of the catalytic element contained in the crystalline silicon film. The catalytic element segregates at the crystal grain boundaries in the silicon film, and this segregation becomes a weak current escape path (leak path), which causes a sudden increase in off current (current when the TFT is in the off state). This is because it is believed that

First, a mask 120 is formed on the crystalline silicon film.
8 is formed, and an element belonging to Group 15 of the periodic table (typically phosphorus) is added to the crystalline silicon film. The crystalline silicon film exposed from the mask opening is 1 × 10 ¹⁹ to 1 ×
Gettering sites 1209 containing phosphorus at a concentration of 10 ²⁰ / cm ³ are formed. Note that in this specification, a region in which an element belonging to Group 15 of the periodic table is added and a catalytic element moves by heat treatment is referred to as a gettering site.

Then, in a nitrogen atmosphere, 450 to 650 ° C.
Heat treatment for 4 to 24 hours. By this heat treatment, the catalytic element in the crystalline silicon film moves to the gettering site, so the concentration of the catalytic element in the crystalline silicon film is 1 × 10 ¹⁷ / cm ³ or less, preferably 1 × 10 ¹⁶ / c.
It can be reduced to m ³ or less.

The crystalline silicon film obtained by using the catalytic element as described above has a crystal structure in which rod-like or columnar crystals are arranged with a specific directionality, and the crystallinity is very high. Good. By using such a semiconductor layer,
A TFT with excellent characteristics can be manufactured. Note that this embodiment can be used in combination with the first and second embodiments.

Example 6 In this example, a step of forming a crystalline semiconductor layer will be described.

A lower light-shielding film 1101 and a base insulating film 1102 are formed on the substrate 1100. Then, the amorphous silicon film 11 having a thickness of 200 nm is formed on the base insulating film 1102.
Form 03. Then, a catalytic element is added to the amorphous silicon film. In this embodiment, Ni is used as a catalyst element, and an aqueous solution containing 10 ppm by weight of nickel (aqueous nickel acetate solution) is applied by spin coating to form the catalyst element-containing layer 1104. Note that a catalyst element can be added by a sputtering method or an evaporation method other than the spin coating method (FIG. 9A).

Then, before heat treatment for crystallization, 4
Heat treatment is performed at 00 to 500 ° C. for about 1 hour to desorb hydrogen contained in the amorphous silicon film. After that, in order to perform heat treatment for crystallization, heat treatment is performed at 500 to 650 ° C. for 4 to 12 hours, and the crystalline silicon film 11
05 is formed (FIG. 9B). After that, laser light may be irradiated to further improve crystallinity (FIG. 9C).

Then, it remains on the crystalline silicon film 1105.
The step of reducing the concentration of the catalytic element is performed. Crystalline siri
The catalytic element is 1 × 10 on the con film 1105.¹⁹/ Cm³that's all
It is thought to be contained in the concentration of. Catalyst element remains
A TFT is formed using the crystalline silicon film 1105 as it is.
Although it can be manufactured, the catalytic element is defective in the semiconductor layer.
Segregated to the off current value and the off current value suddenly rises.
There was a problem that Therefore, the crystalline silicon film 11
Removal of catalytic element from 05, 1 x 10¹⁷/ Cm ³Less than,
Preferably 1 × 10¹⁶/ Cm³Reduce to the following concentrations
Heat treatment for the purpose.

A barrier layer 1106 is formed on the surface of the crystalline silicon film 1105. The barrier layer 1106 is a gettering site 1107 to be provided on the barrier layer 1106 later.
Crystalline silicon film 1 when removing by etching
105 is a layer provided so as not to be etched.

The barrier layer 1106 has a thickness of about 1 to 10 nm, and a chemical oxide formed by treating the crystalline silicon film with ozone water may be simply used as the barrier layer. As another example, the chemical oxide can be similarly formed by using an aqueous solution in which hydrogen peroxide solution is mixed with sulfuric acid, hydrochloric acid, nitric acid and the like. In addition, as another example of the barrier layer, the barrier layer may be formed by performing plasma treatment in an oxidizing atmosphere or UV irradiation in an oxygen-containing atmosphere to generate ozone to perform an oxidizing treatment. Furthermore, as another example, using a clean oven, 200 to 3
A barrier layer may be formed by heating to about 50 ° C. and then forming a thin oxide film.

Next, a gettering site 1107 is formed on the barrier layer 1106 by the sputtering method. As the gettering site 1107, rare gas is 1 × 10 ²⁰ / cm.
A semiconductor film containing a concentration of ³ or more, typically, an amorphous silicon film is formed to a thickness of 25 to 250 nm. Since the gettering site 1107 is removed by etching after the gettering step is completed, the crystalline silicon film 1105 is removed.
It is preferable to use a film having a low density so as to increase the etching selection ratio.

The gettering site 1107 contains 5 Ar.
A film is formed by a sputtering method at 0 sccm, a film forming power of 3 kW, a substrate temperature of 150 ° C., and a film forming pressure of 0.2 to 1.0 Pa. In this way, the rare gas element is added to 1 × 10 ¹⁹ to 1
Gettering site 11 containing a concentration of × 10 ²² / cm ³
07 can be formed. Note that since the rare gas element is inactive in the semiconductor film, the crystalline silicon film 110 is used.
It is possible to perform gettering without adversely affecting 5.

Next, heat treatment is performed to surely achieve gettering. The heat treatment may be performed by a heat treatment method using a furnace or an RTA method using a lamp or a heated gas as a heat source. When a furnace is used, heat treatment may be performed at 450 to 600 ° C. for 0.5 to 12 hours in a nitrogen atmosphere. When the RTA method is used, the semiconductor film may be momentarily heated to about 600 to 1000 ° C.

By such heat treatment, the catalytic element remaining in the crystalline silicon film 1105 moves to the gettering site 1107, and the concentration of the catalytic element in the crystalline silicon film 1105 is 1 × 10 ¹⁷ / cm ^3. Hereafter, it can be reduced to preferably 1 × 10 ¹⁶ / cm ³ or less.
Note that the gettering site 1107 is not crystallized at the time of heat treatment for gettering. this is,
It is considered that the rare gas element remains at the gettering site without being released even during the heat treatment.

After the gettering process is completed, the gettering site 1107 is removed by etching. As the etching, dry etching using ClF ₃ without plasma or wet etching using an alkaline solution such as an aqueous solution containing hydrazine or tetraethylammonium hydroxide ((CH ₃ ) ₄ NOH) can be used. Note that in this etching step, the barrier layer 1106 functions as an etching stopper which prevents the crystalline semiconductor film 1105 from being etched. After the gettering site 1107 is removed by etching, the barrier layer 1106 may be removed with hydrofluoric acid or the like.

The crystalline silicon film 1105 obtained by using the catalytic element as described above has a crystal structure in which rod-like or columnar crystals are arranged with a specific directionality,
Very crystalline. Further, since the concentration of the catalytic element in the crystalline silicon film can be sufficiently reduced, by using such a semiconductor layer, a TFT having good characteristics can be obtained.
Can be produced. Note that this embodiment can be used in combination with the first and second embodiments.

(Embodiment 7) By forming a film containing an organic compound (referred to as an organic compound layer) which obtains light emission by applying an electric field on the pixel electrode of the TFT substrate using the present invention and a cathode, A method of forming the device will be described.

According to the first embodiment, a TFT (current controlling TFT) for controlling a current flowing through a light emitting element (a stack of an anode, an organic compound layer and a cathode) is formed on a substrate, and a window 310 is formed. Then, the upper light-shielding film 311 and the insulating film 312 are formed, and then the window 310 is planarized by using the organic insulating film 313. In this embodiment, the current controlling TFT may be a p-channel type TFT.

Then, the fourth interlayer insulating film 314 is used as the insulating film 3.
After flattening the step between 12 and the organic insulating film 313, a pixel electrode (also referred to as an anode) 700 is formed to a state shown in FIG. Since it is not always necessary to flatten the step between the insulating film 312 and the organic insulating film 313,
The practitioner may perform it as needed. Next, after forming the pixel electrode (anode) 700, a bank 701 made of an organic resin film is formed so as to cover the end portion of the anode 700. By forming the organic resin film, the organic compound layer is not formed at the end portion of the anode, so that the electric field concentration of the organic compound layer can be prevented. Next, the organic resin film formed in the light-transmitting region is removed to expose the anode 700, an insulating film 702 is formed over the anode 700, and an organic compound layer 703 and a cathode 704 are formed over the insulating film.

The insulating film 702 is made of an organic resin film of polyimide, polyamide, polyimideamide or the like by a spin coating method, a vapor deposition method, a sputtering method or the like and has a film thickness of 1 to 5
nm may be formed.

The organic compound 703 may be formed by combining a plurality of layers such as a hole transport layer, a hole blocking layer, an electron transport layer, an electron injection layer and a buffer layer as a hole injection layer in addition to the light emitting layer. The thickness of the organic compound layer 703 is preferably about 10 to 400 nm.

The cathode 704 is formed by the vapor deposition method after the organic compound layer 703 is formed. As the material for the cathode 704, in addition to MgAg and an Al-Li alloy (alloy of aluminum and lithium), a film formed by co-evaporation with an element belonging to Group 1 or 2 of the periodic table and aluminum is used. Good. The thickness of the cathode 704 is 80 to 200.
About nm is preferable. Thus, a light emitting device as shown in FIG. 16A can be manufactured.

The window 310 is not flattened after the insulating film 312 is formed according to the first embodiment.
An anode 1700 inside the window, as shown in FIG.
Insulating film 1701, organic compound layer 1702, cathode 1703
Can also be formed. By doing so, it is not necessary to form a bank for preventing the formation of the organic compound layer at the end of the anode, so that the manufacturing cost can be reduced.

Further, by digging the glass substrate in the area corresponding to the opening formed in the window 310 and making the thickness of the glass substrate thinner than the other areas, the light emitting area of the light emitting element is widened, so that the light emitting device is provided. It is also possible to increase the brightness.

As described above, the applicable range of the present invention is wide, and it can be applied not only to the liquid crystal display device. Note that this embodiment can be applied by combining with Embodiments 1 to 3 and Embodiments 1 to 2, 4, 5, and 6 to manufacture a light emitting device.

(Embodiment 8) An active matrix type liquid crystal display (liquid crystal display device or EL display device) formed by implementing the present invention is incorporated in a display section to obtain high image quality,
It is possible to realize an electric device capable of displaying with high brightness.

Examples of such electric appliances include a projector, a video camera, a digital camera, a head mounted display (goggle type display), a personal computer, a personal digital assistant (mobile computer, mobile phone, electronic book, etc.) and the like. Examples of these are shown in FIGS. 10, 11 and 12.

FIG. 10A shows a front type projector including a projection device 2601, a screen 2602 and the like.

FIG. 10B shows a rear type projector, which includes a main body 2701, a projection device 2702, and a mirror 270.
3, screen 2704 and the like.

Note that FIG. 10C is a diagram showing an example of the structure of the projection devices 2601 and 2702 in FIGS. 10A and 10B. Projection device 2601, 27
02 is a light source optical system 2801, mirrors 2802, 280
4 to 2806, dichroic mirror 2803, prism 2807, liquid crystal display device 2808, retardation plate 280.
9, a projection optical system 2810. Projection optical system 28
Reference numeral 10 is composed of an optical system including a projection lens. Although the present embodiment shows an example of a three-plate type, it is not particularly limited and may be, for example, a single-plate type. Further, the practitioner may appropriately provide an optical system such as an optical lens, a film having a polarization function, a film for adjusting a phase difference, an IR film, etc. in the optical path indicated by the arrow in FIG. Good.

FIG. 10D is a diagram showing an example of the structure of the light source optical system 2801 in FIG. 10C. In this embodiment, the light source optical system 2801 includes a reflector 2811, a light source 2812, a lens array 2813, and a lens array 2813.
814, a polarization conversion element 2815, and a condenser lens 2816. The light source optical system shown in FIG. 10D is an example and is not particularly limited. For example, the practitioner may appropriately provide an optical system such as an optical lens, a film having a polarization function, a film for adjusting a phase difference, and an IR film in the light source optical system.

FIG. 11A shows a personal computer, which has a main body 2001, an image input section 2002, and a display section 20.
03, keyboard 2004 and the like.

FIG. 11B shows a video camera, which includes a main body 2101, a display portion 2102, a voice input portion 2103, operation switches 2104, a battery 2105, and an image receiving portion 210.
Including 6 etc.

FIG. 11C shows a mobile computer (mobile computer), which includes a main body 2201, a camera portion 2202, an image receiving portion 2203, operation switches 2204, a display portion 2205, and the like.

FIG. 11D shows a goggle type display, which includes a main body 2301, a display portion 2302 and an arm portion 230.
Including 3 etc.

FIG. 11E shows a player that uses a recording medium (hereinafter referred to as a recording medium) in which a program is recorded, and has a main body 2401, a display section 2402, and a speaker section 240.
3, a recording medium 2404, operation switches 2405 and the like. This player uses a DVD (D
optical Versatile Disc), CD
It is possible to play music, watch movies, play games, and use the internet.

FIG. 11F shows a digital camera which includes a main body 2501, a display portion 2502, an eyepiece portion 2503, operation switches 2504, an image receiving portion (not shown) and the like.

FIG. 12A shows a mobile phone, which is 3001.
Is a display panel and 3002 is an operation panel. The display panel 3001 and the operation panel 3002 are connected to each other by the connecting portion 3
Connected at 003. The angle θ between the surface of the connection panel 3003 on which the display portion 3004 of the display panel 3001 is provided and the surface of the operation panel 3002 on which the operation keys 3006 are provided can be arbitrarily changed. Furthermore, a voice output unit 3005 and operation keys 300
6, a power switch 3007, and a voice input unit 3008.

FIG. 12B shows a portable book (electronic book) including a main body 3101, display portions 3102 and 3103, a storage medium 3104, operation switches 3005, an antenna 3106.
Including etc.

FIG. 12C shows a display, which includes a main body 3201, a support base 3202, a display portion 3203, and the like.

As described above, the applicable range of the present invention is extremely wide, and the present invention can be applied to electric appliances in all fields. Moreover, the electric appliance of the present embodiment can be realized by combining Embodiments 1 to 4.

[0158]

By using the present invention, the light-shielding film is
By forming the FT so as to be fitted thereto, the TFT can be completely covered with the lower light-shielding film and the upper light-shielding film, so that the light leak current can be suppressed. Further, it is possible to secure a sufficient storage capacity without reducing the aperture ratio.

By using such a TFT shading technique, a display device capable of high-quality, high-definition, and high-luminance display can be realized, and such a display device can be used as a display portion of an electric appliance. By using it, it is possible to realize an electric appliance capable of high-quality, high-definition, and high-luminance display.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of a semiconductor device manufactured by using the present invention.

FIG. 2 is a diagram showing an example of implementation of the present invention.

FIG. 3 is a diagram showing an example of implementation of the present invention.

FIG. 4 is a diagram showing an example of implementation of the present invention.

FIG. 5 is a diagram showing an example of implementation of the present invention.

FIG. 6 is a diagram showing an example of implementation of the present invention.

FIG. 7 is a diagram showing an example of implementation of the present invention.

FIG. 8 is a diagram showing an example of implementation of the present invention.

FIG. 9 is a diagram showing an example of implementation of the present invention.

FIG. 10 is a diagram showing an example of an electric appliance.

FIG. 11 is a diagram showing an example of an electric appliance.

FIG. 12 is a diagram showing an example of an electric appliance.

FIG. 13 is a diagram showing an example of implementation of the present invention.

FIG. 14 is a diagram showing an example of implementation of the present invention.

FIG. 15 is a diagram showing an example of implementation of the present invention.

FIG. 16 is a diagram showing an example of implementation of the present invention.

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) G02F 1/1368 G02F 1/1368 5F052 G09F 9/35 G09F 9/35 5F110 H01L 21/20 H01L 21/20 21/322 21 / 322 GR 21/336 H05B 33/14 A 29/786 H01L 29/78 612D H05B 33/14 619B 627G 627A 627Z F term (reference) 2H088 EA12 HA08 MA01 MA09 MA20 2H091 FA34Y FA37Y GA13 LA03 LA16 LA30 MA07 2H092 GA60 JA24 KA04 MA07 MA35 NA01 NA16 NA25 PA09 RA05 3K007 AB02 AB03 AB17 AB18 BB06 CA01 DB03 GA00 5C094 AA07 AA42 AA43 BA03 BA43 CA19 DA15 EA04 EA07 5F052 AA02 AA11 DD02B02 DD02A02 A02 A02 A21 A02 A02 A21 A02 A21 A02 A21 A02 A02 A21 A02 A21 A02 A21 A02 A02 A02 A21 A02 A02 EE01 EE04 EE08 EE14 GG01 GG02 GG13 GG25 GG32 GG34 HJ01 HJ04 HJ23 HL03 HL04 HL11 HM15 NN03 NN04 NN22 NN23 NN24 NN27 NN33 NN34 NN35 NN36 NN42 NN44 NN45 NN46 NN47 NN48 NN54 NN55 NN73 PP01 PP03 PP10 PP13 PP29 PP34 PP35 PP38 QQ11 QQ19 QQ24 QQ25 QQ28

Claims (22)

[Claims] 1. A semiconductor device comprising: a TFT on a substrate; a pixel electrode electrically connected to the TFT; and an upper light-shielding film between the TFT and the pixel electrode. Has a window formed by removing the interlayer insulating film between the pixel electrode and the substrate, and the upper light-shielding film extends from the bottom surface of the window to the pixel insulating film. TFT
A semiconductor device, which is continuously formed up to the interlayer insulating film so as to cover the inside of the window, and an opening is formed inside the window. 2. A lower light-shielding film on a substrate, a TFT on the lower light-shielding film, a pixel electrode electrically connected to the TFT, and an upper light-shielding film between the TFT and the pixel electrode. And a window formed by removing the interlayer insulating film between the pixel electrode and the substrate, wherein at least one layer of the interlayer insulating film is formed on the TFT. The upper light-shielding film is formed from the bottom of the window to the TFT.
Is continuously formed to cover the interlayer insulating film, and the area of the window is substantially equal to the area of the opening. 3. A lower light-shielding film on a substrate, a TFT on the lower light-shielding film, a pixel electrode electrically connected to the TFT, and an upper light-shielding film between the TFT and the pixel electrode. And a window formed by removing the interlayer insulating film between the pixel electrode and the substrate, wherein at least one layer of the interlayer insulating film is formed on the TFT. The upper light-shielding film is formed from the bottom of the window to the TFT.
Is continuously formed to cover the interlayer insulating film, and the lower light-shielding film and the upper light-shielding film are in contact with each other at the bottom surface of the window. 4. A lower light-shielding film on a substrate, a TFT on the lower light-shielding film, a storage capacitor element formed in parallel with the TFT, a pixel electrode electrically connected to the TFT, A semiconductor device having an upper light-shielding film between a TFT and the pixel electrode, wherein at least 1 is provided on the TFT and the storage capacitor element.
A layer interlayer insulating film is formed, the window is provided between the pixel electrode and the substrate, and the lower light-shielding film and the upper light-shielding film are in contact with each other at the bottom surface of the window. Characteristic semiconductor device. 5. A semiconductor device comprising: a TFT on a substrate; a pixel electrode electrically connected to the TFT; and a light-shielding film between the TFT and the pixel electrode. An interlayer insulating film of at least one layer is formed, and a window is formed between the pixel electrode and the substrate by removing the interlayer insulating film, and the window is flattened by a translucent organic insulating film. The semiconductor device is characterized in that the light shielding film is continuously formed from the bottom surface of the window to the interlayer insulating film so as to cover the TFT. 6. A lower light-shielding film on a substrate, a TFT on the lower light-shielding film, a pixel electrode electrically connected to the TFT, and a plurality of upper portions between the TFT and the pixel electrode. In a semiconductor device having a laminated body in which a light shielding film and an insulating film are alternately laminated, at least one interlayer insulating film is formed on the TFT, and the interlayer is formed between the pixel electrode and the substrate. A window is formed by removing the insulating film, the window is planarized by a light-transmitting organic insulating film, and the plurality of stacked upper light-shielding films cover the TFT from the bottom surface of the window. A semiconductor device characterized by being formed so that 7. A lower light blocking film on a substrate, a TFT on the lower light blocking film, a pixel electrode electrically connected to the TFT, and a plurality of upper light blockings between the TFT and the pixel electrode. In a semiconductor device having a laminated body in which films and insulating films are alternately laminated, at least one layer of an interlayer insulating film is formed on the TFT, and the interlayer insulating film is provided between the pixel electrode and the substrate. A window is formed by removing the film, the window is planarized by a translucent organic insulating film, and the plurality of stacked upper light-shielding films covers the TFT from the bottom surface of the window. And at least one upper light-shielding film of the stack is
A semiconductor device, wherein FT and the pixel electrode are electrically connected. 8. A lower light blocking film on a substrate, a TFT on the lower light blocking film, a pixel electrode electrically connected to the TFT, and a plurality of upper light blockings between the TFT and the pixel electrode. In a semiconductor device having a laminated body in which films and insulating films are alternately laminated, at least one layer of an interlayer insulating film is formed on the TFT, and the interlayer insulating film is provided between the pixel electrode and the substrate. A window is formed by removing the film, the window is planarized by a translucent organic insulating film, and the plurality of stacked upper light-shielding films covers the TFT from the bottom surface of the window. The semiconductor device is formed as described above, and a storage capacitor element is formed by the insulating film and the plurality of upper light-shielding films formed via the insulating film in the stacked body. 9. A TFT on a substrate, a pixel electrode electrically connected to the TFT, and a plurality of upper light-shielding films and insulating films are alternately laminated between the TFT and the pixel electrode. And a window formed by removing the interlayer insulating film between the pixel electrode and the substrate. The wiring that electrically connects the TFT and the pixel electrode is one layer of the upper light-shielding film formed so as to cover the TFT from the bottom surface of the window, and the area of the window is In the semiconductor device, the display area is substantially equal to the area intended to be controlled. 10. The substrate and the TF according to claim 9.
A semiconductor device, wherein a lower light-shielding film is formed between T and T. 11. A first layer of the upper light-shielding film and the lower light-shielding film are in contact with each other at a bottom side of the window between the pixel electrode and the substrate. Semiconductor device. 12. The window according to any one of claims 1 to 11, wherein the window is R (red), G (green), or B.
A semiconductor device comprising a (blue) colored photoresist film and a translucent organic insulating film. 13. A step of forming a semiconductor layer on an insulating surface, a step of forming a gate insulating film on the semiconductor layer, a step of forming a gate electrode on the gate insulating film, and a step of forming a gate electrode on the gate electrode. Forming a first interlayer insulating film, forming a second interlayer insulating film on the first interlayer insulating film, forming a first contact hole reaching the semiconductor layer, and electrically connecting each TFT. A step of forming a wiring for controlling the wiring, a step of forming a third interlayer insulating film so as to cover the wiring, a step of forming a groove reaching a substrate between a region through which light is transmitted and the TFT, 3 step of continuously forming a light-shielding film from the interlayer insulating film to the groove, step of forming a second contact hole for connecting the pixel electrode and the wiring, and fourth interlayer insulating film on the light-shielding film. A step of forming a film, and The method for manufacturing a semiconductor device according to a step of removing a portion of the insulating film formed on the second contact hole to expose the lines, and forming the pixel electrode, characterized in that it comprises a. 14. A step of forming a semiconductor layer on an insulating surface, a step of forming a gate insulating film on the semiconductor layer, a step of forming a gate electrode on the gate insulating film, and a step on the gate electrode. Forming a first interlayer insulating film, forming a second interlayer insulating film on the first interlayer insulating film, forming a first contact hole reaching the semiconductor layer, and electrically connecting each TFT. A step of forming a wiring for connection, a step of forming a third interlayer insulating film so as to cover the wiring, a base insulating film, a gate insulating film, a first interlayer insulating film, a second insulating film in a region where light is transmitted. Removing the interlayer insulating film to form a window reaching the substrate; forming an upper light-shielding film on the third interlayer insulating film so as to cover the TFT; and forming the window on the bottom surface of the window. Process to remove the light shielding film A step of forming a second contact hole in the upper light-shielding film, a step of forming a fourth interlayer insulating film on the upper light-shielding film, and a step of flattening the window with an insulating film having a light-transmitting property. A step of forming a fifth interlayer insulating film on the upper light-shielding film, a step of removing a part of the insulating film buried in the second contact hole so as to expose the wiring, the fifth interlayer And a step of forming a pixel electrode on the insulating film. 15. A step of forming a semiconductor layer on an insulating surface, a step of forming a gate insulating film on the semiconductor layer, a step of forming a gate electrode on the gate insulating film, and a step of forming a gate electrode on the gate electrode. Forming a first interlayer insulating film, forming a second interlayer insulating film on the first interlayer insulating film, forming a first contact hole reaching the semiconductor layer, and electrically connecting each TFT. A step of forming a wiring for connection, a step of forming a third interlayer insulating film so as to cover the wiring, a base insulating film, a gate insulating film, a first interlayer insulating film, a second insulating film in a region where light is transmitted. A step of removing the interlayer insulating film to form a window reaching the substrate; a step of forming an upper first light shielding film so as to fit a TFT on the third interlayer insulating film; The wiring is formed on the third interlayer insulating film. Forming a second contact hole that reaches, a step of forming a first insulating film on the upper first light-shielding film, and the first insulating film buried in the second contact hole so that the wiring is exposed. A step of partially removing the film; a step of forming an upper second light-shielding film on the first insulating film; a step of forming a second insulating film on the upper second light-shielding film; A step of forming an upper third light-shielding film thereon, a lower light-shielding film formed on the bottom surface of the window, the upper first light-shielding film, the first insulating film, the upper second light-shielding film, the second insulating film, A step of removing the upper third light-shielding film, a step of forming a third contact hole reaching the upper second light-shielding film in the upper third light-shielding film and the second insulating film, and a fourth interlayer insulating film. By the process of forming and the insulating film having light transmittance The step of flattening the window, the step of forming a fifth interlayer insulating film on the upper third light blocking film, and the insulating film buried in the third contact hole so that the upper second light blocking film is exposed. And a step of forming a pixel electrode on the fifth interlayer insulating film, a method of manufacturing a semiconductor device, comprising: 16. A method for manufacturing a semiconductor device according to claim 13, including a step of forming a lower light-shielding film on the insulating surface. 17. The wiring according to claim 13, wherein the lower light-shielding film, the first upper light-shielding film, and the third upper light-shielding film are connected to a ground potential. A method for manufacturing a semiconductor device, comprising: 18. The method of manufacturing a semiconductor device according to claim 14, wherein the lower light-shielding film and the upper light-shielding film are formed so as to be in contact with the bottom surface of the window. 19. The method for manufacturing a semiconductor device according to claim 14, wherein the step of planarizing the window is performed using an organic insulating film. 20. The step of flattening the window according to claim 14, wherein the step of flattening the window is R
A method of manufacturing a semiconductor device, comprising: stacking a photoresist film and a transparent organic insulating film colored (red), G (green) or B (blue). 21. The method for manufacturing a semiconductor device according to claim 13, wherein the semiconductor layer is crystallized by irradiation with laser light. 22. The semiconductor layer according to claim 13, wherein the semiconductor layer is crystallized by using a catalyst element and then the catalyst element is gettered to adjust a catalyst element concentration in the semiconductor layer. A method for manufacturing a semiconductor device, which is a crystalline semiconductor film obtained by reduction.