JP2003046142A - Light emitting device and support base used therefor - Google Patents
Light emitting device and support base used thereforInfo
- Publication number
- JP2003046142A JP2003046142A JP2001233983A JP2001233983A JP2003046142A JP 2003046142 A JP2003046142 A JP 2003046142A JP 2001233983 A JP2001233983 A JP 2001233983A JP 2001233983 A JP2001233983 A JP 2001233983A JP 2003046142 A JP2003046142 A JP 2003046142A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- light emitting
- pair
- support base
- grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10152—Auxiliary members for bump connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/10175—Flow barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/1701—Structure
- H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
Landscapes
- Wire Bonding (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、発光素子をフリッ
プチップ方式で支持台に装着した発光装置とその支持台
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device in which a light emitting element is mounted on a supporting base by a flip chip method and a supporting base thereof.
【0002】[0002]
【従来の技術】基板としてサファイヤ基板を用いる窒化
ガリウム系半導体発光素子のように、基板として絶縁性
のものを用いる発光素子は一般に、p、n電極を一方の
面に配置している(特開平10−256184号公報な
ど)。そして、この発光素子をフリップチップ方式で固
定するための支持台は、上面に前記p、n電極と電気的
に接続される一対のp、n電極を形成している。そし
て、支持台のp、n電極と発光素子のp、n電極間に半
田などの導電性を有する接着剤を介在させて発光素子を
支持台に固定することによって発光装置の組立てを行な
っている。2. Description of the Related Art In general, a light emitting device using an insulating substrate such as a gallium nitride based semiconductor light emitting device using a sapphire substrate as a substrate has p and n electrodes arranged on one surface thereof (Japanese Patent Laid-Open No. Hei 10 (1999) -242977). 10-256184, etc.). A support for fixing the light emitting element by the flip chip method has a pair of p and n electrodes electrically connected to the p and n electrodes on the upper surface. Then, the light emitting device is assembled by fixing the light emitting element to the support with an electrically conductive adhesive such as solder interposed between the p and n electrodes of the support and the p and n electrodes of the light emitting element. .
【0003】しかしながら、流動状態になった導電性の
接着剤がp,n電極間を連絡するように拡散することが
有り、それによって電極のショートが発生するという問
題が有った。However, there is a problem that the conductive adhesive in a fluidized state may diffuse so as to connect between the p and n electrodes, which causes a short circuit of the electrodes.
【0004】[0004]
【発明が解決しようとする課題】そこで、本発明は、上
記した電極間のショートの発生を防止することを課題の
1つとする。また、ショート対策のために電極間隔を広
くすることによる素子形状の大型化を防ぐことを課題の
1つとする。Therefore, one of the objects of the present invention is to prevent the occurrence of the above-mentioned short circuit between the electrodes. Another object is to prevent enlargement of the element shape by widening the electrode interval as a countermeasure against short circuits.
【0005】[0005]
【課題を解決するための手段】本発明の発光装置は請求
項1に記載のように、一方の面に一対の電極を備える発
光素子と、前記一対の電極が固定される一対の電極を上
面に備える支持台とからなる発光装置において、前記支
持台の上面に前記一対の電極間に位置する溝を形成した
ことを特徴とする。As described in claim 1, a light emitting device of the present invention has a light emitting element having a pair of electrodes on one surface and a pair of electrodes to which the pair of electrodes are fixed. In the light-emitting device including the support table provided in step 1, a groove located between the pair of electrodes is formed on the upper surface of the support table.
【0006】本発明の発光装置は請求項2に記載のよう
に、一方の面に一対の電極を備える発光素子と、前記一
対の電極が固定される一対の電極を上面に備える支持台
とからなる発光装置において、前記支持台の上面に前記
一対の電極に対応した一対の溝を形成したことを特徴と
する。As described in claim 2, the light emitting device of the present invention comprises a light emitting element having a pair of electrodes on one surface and a support base having a pair of electrodes on the upper surface to which the pair of electrodes are fixed. In the above light emitting device, a pair of grooves corresponding to the pair of electrodes are formed on the upper surface of the support base.
【0007】本発明の発光装置は請求項3に記載のよう
に、一方の面に一対の電極を備える発光素子と、前記一
対の電極が固定される一対の電極を上面に備える支持台
とからなる発光装置において、前記支持台の上面の前記
一対の電極の間に、互いに独立した少なくとも2つの溝
を形成したことを特徴とする。As described in claim 3, the light emitting device of the present invention comprises a light emitting element having a pair of electrodes on one surface, and a support base having a pair of electrodes on the upper surface to which the pair of electrodes are fixed. According to another aspect of the present invention, at least two independent grooves are formed between the pair of electrodes on the upper surface of the support.
【0008】本発明の支持台は請求項4に記載のよう
に、上面に一対の電極を備える発光素子支持用の支持台
において、前記上面に前記一対の電極間に位置する溝を
形成したことを特徴とする。According to a fourth aspect of the present invention, there is provided a support base for supporting a light emitting device, comprising a pair of electrodes on an upper surface of the support base, wherein a groove located between the pair of electrodes is formed on the upper surface. Is characterized by.
【0009】本発明の支持台は請求項5に記載のよう
に、上面に一対の電極を備える発光素子支持用の支持台
において、前記上面に前記一対の電極に対応した一対の
溝を形成したことを特徴とする。According to a fifth aspect of the present invention, there is provided a support base for supporting a light emitting device, comprising a pair of electrodes on an upper surface, wherein a pair of grooves corresponding to the pair of electrodes are formed on the upper surface. It is characterized by
【0010】本発明の支持台は請求項6に記載のよう
に、上面に一対の電極を備える支持台において、前記上
面の前記一対の電極の間に、互いに独立した少なくとも
2つの溝を形成したことを特徴とする。According to a sixth aspect of the support base of the present invention, in the support base having a pair of electrodes on the upper surface, at least two independent grooves are formed between the pair of electrodes on the upper surface. It is characterized by
【0011】[0011]
【発明の実施の形態】以下、本発明の実施形態につい
て、図面を参照して説明する。図1は本発明の第1実施形
態に係る発光装置1の断面図、図2は、図1の要部(支
持台)の平面図である。尚、図1は、図2のA−A線に
沿った断面図である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of a light emitting device 1 according to a first embodiment of the present invention, and FIG. 2 is a plan view of a main part (support base) of FIG. Note that FIG. 1 is a sectional view taken along the line AA of FIG.
【0012】発光装置1は、発光素子2とそれをフリッ
プチップ方式で固定するための前記発光素子よりも面積
が広いチップ型の支持台3によって構成される。発光素
子2は、一方の面にp型電極4とn型電極5の一対の電
極を備えている。発光素子2としては、例えば図6に示
すような窒化ガリウム系の発光素子を用いることが出来
る。すなわち、サファイヤ基板20上にGaNバッファ
層21、n型GaN半導体層22、n型GaAlNクラ
ッド層23、InGaN活性層24、p型GaAlNク
ラッド25、p型GaNコンタクト層26を積層し、p
型GaNコンタクト層26にAu系のp型電極、n型G
aN半導体層22層にAl系のn電極を設けて発光素子
2を構成することが出来る。発光素子は、一方の面に一
対の電極を備えていれば、上記以外の構成の発光素子を
用いても良い。The light emitting device 1 comprises a light emitting element 2 and a chip type support 3 for fixing the light emitting element 2 by a flip chip method and having a larger area than the light emitting element. The light emitting element 2 is provided with a pair of electrodes of a p-type electrode 4 and an n-type electrode 5 on one surface. As the light emitting element 2, for example, a gallium nitride based light emitting element as shown in FIG. 6 can be used. That is, the GaN buffer layer 21, the n-type GaN semiconductor layer 22, the n-type GaAlN cladding layer 23, the InGaN active layer 24, the p-type GaAlN cladding 25, and the p-type GaN contact layer 26 are laminated on the sapphire substrate 20, and p
-Type GaN contact layer 26 with Au-based p-type electrode and n-type G
The light emitting element 2 can be configured by providing an Al-based n electrode on the aN semiconductor layer 22 layer. As the light emitting element, a light emitting element having a configuration other than the above may be used as long as it has a pair of electrodes on one surface.
【0013】支持台3は、基材6の一方の面(上面)に
薄膜型の一対の電極7,8を備え、この電極7,8の間
に複数の溝9、10を配置したチップ型の素子によって
構成している。基材6は、半導体基板、絶縁基板、絶縁
処理を施した金属基板などを用いることが出来るが、こ
こでは半導体基板を用いる場合を例にとって説明する。The support base 3 is provided with a pair of thin film type electrodes 7 and 8 on one surface (upper surface) of a base material 6 and a chip type in which a plurality of grooves 9 and 10 are arranged between the electrodes 7 and 8. It is composed of elements. As the base material 6, a semiconductor substrate, an insulating substrate, a metal substrate subjected to an insulating treatment, or the like can be used. Here, the case of using a semiconductor substrate will be described as an example.
【0014】支持台3の基材6は、n型Si(シリコ
ン)基板からなる半導体基板によって構成している。例
えば、抵抗率が500Ωcm、厚さが200μmで、表
面が(100)面とされたn型Si基板を用意し、その
表面に酸化シリコン膜(SiO2)11を形成してい
る。酸化シリコン膜11は、はじめに熱酸化によって形
成される。The base material 6 of the support base 3 is composed of a semiconductor substrate made of an n-type Si (silicon) substrate. For example, an n-type Si substrate having a resistivity of 500 Ωcm, a thickness of 200 μm and a (100) surface is prepared, and a silicon oxide film (SiO 2) 11 is formed on the surface. The silicon oxide film 11 is first formed by thermal oxidation.
【0015】次に、一方の面の酸化シリコン膜11をフ
ォトリソグラフィによって選択的に除去し、残った酸化
シリコン膜11をマスクとして異方性ウェットエッチン
グを行なうことにより、酸化シリコン膜11から露出し
たSi層のエッチングを行なう。このエッチングによっ
て、深さが3μm程度の溝9,10を形成する。Next, the silicon oxide film 11 on one surface is selectively removed by photolithography, and anisotropic wet etching is performed using the remaining silicon oxide film 11 as a mask to expose it from the silicon oxide film 11. The Si layer is etched. By this etching, the grooves 9 and 10 having a depth of about 3 μm are formed.
【0016】さらに、表面保護用に、気相成長法(CV
D)によって酸化シリコン膜(SiO2)を全面に成膜
する。図1の酸化シリコン膜7の内、膜厚が厚い部分は
熱酸化とCVDの両方の膜が存在する部分を示し、膜厚
が薄い部分は熱酸化の膜が除去されてCVDによる膜の
みが残っている部分を示している。Further, for surface protection, a vapor phase growth method (CV
A silicon oxide film (SiO2) is formed on the entire surface by D). In the silicon oxide film 7 of FIG. 1, a thick film portion shows a portion where both the thermal oxidation film and the CVD film exist, and a thin film portion has the thermal oxidation film removed so that only the CVD film. It shows the remaining part.
【0017】そして、酸化シリコン膜11上に、Cr
(クロム)/Au(金)等からなる電極材料を成膜し、
フォトリソグラフィにより、不用な部分の電極材料を除
去することによって、支持台3の一方の面(上面)に前
記p,n電極4,5に対応した一対の支持台用の電極
7,8を形成する。Then, Cr is formed on the silicon oxide film 11.
An electrode material composed of (chrome) / Au (gold) or the like is formed into a film,
By removing unnecessary portions of the electrode material by photolithography, a pair of electrodes 7 and 8 for the support base corresponding to the p and n electrodes 4 and 5 are formed on one surface (upper surface) of the support base 3. To do.
【0018】電極形成後に、所定のチップササイズに半
導体基板を分割することによって、1つの半導体基板か
ら複数の支持台3を作ることが出来る。After the electrodes are formed, the semiconductor substrate is divided into a predetermined chip size so that a plurality of support bases 3 can be formed from one semiconductor substrate.
【0019】電極7,8は、発光素子2の電極4,5よ
りも十分大きな面積に設定され、発光素子2の電極4,
5が発光素子2の対向する辺の中央部に位置する場合
や、発光素子2の対角線方向に位置する場合の何れにも
対応することが出来るように、発光素子の対向する2辺
と同等の長さ範囲に亘って形成されている。The electrodes 7 and 8 are set to have a sufficiently larger area than the electrodes 4 and 5 of the light emitting element 2, and the electrodes 4 and 5 of the light emitting element 2 are set.
In order to accommodate both the case where 5 is located in the center of the opposite sides of the light emitting element 2 and the case where it is located in the diagonal direction of the light emitting element 2, it is equivalent to the two opposite sides of the light emitting element. It is formed over the length range.
【0020】発光素子2は、そのp,n電極4,5が、
半田や銀ペースト等の導電性の接着剤12,12を用い
て支持台3の対応する電極7,8に固定されることによ
って、支持台3に装着される。In the light emitting element 2, the p and n electrodes 4 and 5 are
It is attached to the support base 3 by being fixed to the corresponding electrodes 7 and 8 of the support base 3 using a conductive adhesive 12, 12 such as solder or silver paste.
【0021】支持台3の上面に形成した溝9,10は、
支持台の上面を3つの領域、すなわち、電極7,8のあ
る2つの領域と、電極7,8の間の1つの領域に区分け
するように、電極7,8の間に互いに平行して設けてい
るので、流動状態に有る接着剤12が電極7,8上から
流れ出した際に、溝9、10が流れ出した接着剤12を
受け入れ、それ以上の拡散を阻止するように作用する。The grooves 9 and 10 formed on the upper surface of the support base 3 are
The upper surface of the support base is divided into three regions, that is, two regions with the electrodes 7 and 8 and one region between the electrodes 7 and 8 in parallel with each other between the electrodes 7 and 8. Therefore, when the adhesive 12 in a fluidized state flows out from the electrodes 7 and 8, the grooves 9 and 10 receive the adhesive 12 that has flowed out and act to prevent further diffusion.
【0022】溝9,10を電極7,8に対応して配置し
ているので、一方の溝9は電極7から流れ出す接着剤を
受け入れ、他方の溝10は電極8から流れ出す接着剤を
受け入れることができ、各電極7,8上から流れ出す接
着剤12が融合することを未然に防止することが出来
る。すなわち、電極7,8が接着剤12によってショー
トする事故の発生を未然に阻止することが出来る。Since the grooves 9 and 10 are arranged corresponding to the electrodes 7 and 8, one groove 9 should receive the adhesive flowing out from the electrode 7, and the other groove 10 should receive the adhesive flowing out from the electrode 8. Therefore, it is possible to prevent the adhesive 12 flowing out from the electrodes 7 and 8 from fusing together. That is, it is possible to prevent the occurrence of an accident in which the electrodes 7 and 8 are short-circuited by the adhesive 12.
【0023】このように、平行する2つの独立した溝
9,10を電極7,8の間に配置しているので、発光素
子2の電極4,5が図2に示すように発光素子2の対向
する辺の中央部に配置されている場合は勿論、後述する
ように発光素子2の対角線方向に配置されている場合に
おいても、流れ出した個々の接着剤12を確実に溝9,
10に受け入れることが出来る。As described above, since the two independent parallel grooves 9 and 10 are arranged between the electrodes 7 and 8, the electrodes 4 and 5 of the light emitting element 2 are arranged as shown in FIG. Not only when the adhesives 12 are arranged at the central portions of the opposite sides but also when they are arranged in the diagonal direction of the light emitting element 2 as described later, the individual adhesives 12 that have flowed out are surely prevented from flowing into the grooves 9,
Can accept 10.
【0024】図1,2に示す形態は、複数の溝9,10
を支持台3の上面を完全に横切るように形成した例を示
しているが、図3に示すように、各溝9,10を支持台
の一方の面を完全に横切らないように形成することも出
来る。すなわち、溝9(10)と平行する支持台3の辺
の長さより短い長さに溝9,10の長さを設定すること
も出来る。ここで、溝9,10がその幅方向において互
いに重なる領域を持つように溝9,10の長さを設定し
ておくのが、接着剤12の流れ出しを有効に阻止する上
で好ましい。図3に示す支持台3は、同図に示すよう
に、p,n電極4,5を対角線方向に配置した発光素子
2を装着する場合に有効である。The configuration shown in FIGS. 1 and 2 has a plurality of grooves 9 and 10.
3 shows an example in which the groove is formed so as to completely traverse the upper surface of the support base 3. However, as shown in FIG. 3, each groove 9 and 10 should be formed so as not to completely traverse one surface of the support base. You can also That is, the lengths of the grooves 9 and 10 can be set to be shorter than the length of the side of the support base 3 parallel to the groove 9 (10). Here, it is preferable to set the lengths of the grooves 9 and 10 so that the grooves 9 and 10 have regions overlapping with each other in the width direction in order to effectively prevent the adhesive 12 from flowing out. As shown in FIG. 3, the support base 3 shown in FIG. 3 is effective for mounting the light emitting element 2 in which the p and n electrodes 4 and 5 are arranged in a diagonal direction.
【0025】上記実施形態は、溝9,10を互いに平行
するように支持台3に形成した例を示したが、本発明
は、図4に示すように、複数の溝9,10を一直線上に
配置する場合にも適用することが出来る。このように溝
9,10を配置すれば、図4に示すように一対の電極
4,5が対角線方向に配置された発光素子2を支持台3
に装着する場合に、接着剤12の流れ出しを防止する上
で有効である。また。溝9,10による占有面積が狭く
なるので、支持台3や発光素子2の寸法を小さくするこ
とが出来る。Although the above embodiment shows an example in which the grooves 9 and 10 are formed on the support base 3 so as to be parallel to each other, according to the present invention, as shown in FIG. It can also be applied to the case of arranging in. By arranging the grooves 9 and 10 in this way, the light emitting element 2 in which the pair of electrodes 4 and 5 are arranged in a diagonal direction as shown in FIG.
It is effective in preventing the adhesive 12 from flowing out when the adhesive 12 is mounted on. Also. Since the area occupied by the grooves 9 and 10 is reduced, the dimensions of the support base 3 and the light emitting element 2 can be reduced.
【0026】また、上記各実施形態は、溝9,10を独
立して2つ形成する例を示したが、本発明は、3つ以上
の独立した溝を形成する場合にも適用することが出来る
し、図5に示すように、溝が1つの場合にも適用するこ
とが出来る。Although each of the above-described embodiments shows an example in which two grooves 9 and 10 are independently formed, the present invention can be applied to the case where three or more independent grooves are formed. This is possible, and as shown in FIG. 5, it can be applied to the case where there is one groove.
【0027】図5に示すように、溝9が1つであると、
両電極7,8から同時に接着剤が流れ出し、それが溝内
で融合する場合には効果を発揮できないが、電極4,5
や電極7,8の材質、形状、配置等によっては、一方の
電極からのみ接着剤12が優先して流れ出すことが有
り、このよう場合には溝が1つでも有効である。As shown in FIG. 5, when there is one groove 9,
If the adhesive flows out from both electrodes 7 and 8 at the same time and they are fused in the groove, the effect cannot be exhibited.
Depending on the material, shape, arrangement, etc. of the electrodes 7 and 8, the adhesive 12 may preferentially flow out from only one electrode. In such a case, even one groove is effective.
【0028】尚、上記実施形態において、溝9,10は
エッチングによって化学的に形成する場合を例示した
が、本発明は、スクライブやダイシングなどの様に機械
的に溝を形成する場合においても同様に適用することが
出来る。In the above embodiment, the case where the grooves 9 and 10 are chemically formed by etching has been exemplified, but the present invention is also the same when the grooves are mechanically formed such as scribe and dicing. Can be applied to.
【0029】また、各電極7,8の発光素子2で覆われ
ない部分は、ワイヤボンド線13を接続するための領域
として利用される。The portions of the electrodes 7 and 8 which are not covered with the light emitting element 2 are used as regions for connecting the wire bond wires 13.
【0030】また、上記支持台3は、その一部に受光素
子を一体に設けたものとすることも出来る。その受光素
子は、電極7,8が形成される面と同一の面に受光領域
を配置し、前記発光素子2から出た光を直接、あるいは
間接的に受光するために利用することが出来る。このよ
うにすれば、発光装置1は、発光素子2と受光素子を備
える構造とすることが出来る。Further, the support base 3 may be provided with a light receiving element integrally on a part thereof. The light receiving element has a light receiving region arranged on the same surface as the surface on which the electrodes 7 and 8 are formed, and can be used to directly or indirectly receive the light emitted from the light emitting element 2. With this configuration, the light emitting device 1 can have a structure including the light emitting element 2 and the light receiving element.
【0031】[0031]
【発明の効果】本発明によれば、一対の電極から流れ出
す導電性の接着剤を支持台の一方の面に設けた溝によっ
て受け止めることができ、導電性接着剤による電極間の
ショート事故の発生を防止することが出来る。溝を複数
設ければ、接着剤の広がりを確実に抑えることが出来
る。また、溝を一直線上に配置すれば、支持台や発光装
置の外観形状を小型化することが出来る。According to the present invention, the conductive adhesive flowing out from the pair of electrodes can be received by the groove provided on one surface of the supporting base, and a short-circuit accident between the electrodes due to the conductive adhesive occurs. Can be prevented. Providing a plurality of grooves can surely prevent the spread of the adhesive. Further, by arranging the grooves in a straight line, the outer shape of the support base and the light emitting device can be downsized.
【図1】本発明の実施形態を示す要部断面図である。FIG. 1 is a sectional view of an essential part showing an embodiment of the present invention.
【図2】本発明の実施形態を示す要部平面図である。FIG. 2 is a main part plan view showing an embodiment of the present invention.
【図3】本発明の別の実施形態を示す要部平面図であ
る。FIG. 3 is a plan view of a main portion showing another embodiment of the present invention.
【図4】本発明の別の実施形態を示す要部平面図であ
る。FIG. 4 is a plan view of a main part showing another embodiment of the present invention.
【図5】本発明の別の実施形態を示す要部平面図であ
る。FIG. 5 is a main part plan view showing another embodiment of the present invention.
【図6】発光素子の一実施形態を示す断面図である。FIG. 6 is a cross-sectional view showing an embodiment of a light emitting device.
1 発光装置 2 発光素子 3 支持台 4 p型電極 5 n型電極 6 基材 7 電極 8 電極 9 溝 10 溝 11 酸化シリコン膜 12 接着剤 13 ワイヤボンド線 1 Light emitting device 2 light emitting element 3 support 4 p-type electrode 5 n-type electrode 6 base material 7 electrodes 8 electrodes 9 grooves 10 grooves 11 Silicon oxide film 12 Adhesive 13 wire bond wire
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 5F041 AA25 AA47 CA40 CA46 CA74 DA02 DA04 DA07 DA09 DA39 5F044 KK01 LL07 RR18 RR19 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 5F041 AA25 AA47 CA40 CA46 CA74 DA02 DA04 DA07 DA09 DA39 5F044 KK01 LL07 RR18 RR19
Claims (6)
と、前記一対の電極が固定される一対の電極を上面に備
える支持台とからなる発光装置において、前記支持台の
上面に前記一対の電極間に位置する溝を形成したことを
特徴とする発光装置。1. A light emitting device comprising a light emitting element having a pair of electrodes on one surface and a support base having a pair of electrodes to which the pair of electrodes are fixed on an upper surface, wherein the pair of electrodes is provided on an upper surface of the support base. A light emitting device characterized in that a groove located between the electrodes is formed.
と、前記一対の電極が固定される一対の電極を上面に備
える支持台とからなる発光装置において、前記支持台の
上面に前記一対の電極に対応した一対の溝を形成したこ
とを特徴とする発光装置。2. A light emitting device comprising a light emitting device having a pair of electrodes on one surface and a support base having a pair of electrodes to which the pair of electrodes are fixed on the upper surface, wherein the pair of electrodes are provided on the upper surface of the support base. A pair of grooves corresponding to the electrodes of 1. are formed.
と、前記一対の電極が固定される一対の電極を上面に備
える支持台とからなる発光装置において、前記支持台の
上面の前記一対の電極の間に、互いに独立した少なくと
も2つの溝を形成したことを特徴とする発光装置。3. A light emitting device comprising a light emitting element having a pair of electrodes on one surface and a support base having a pair of electrodes to which the pair of electrodes are fixed on an upper surface, wherein the pair of upper surfaces of the support base are provided. A light emitting device, characterized in that at least two grooves independent of each other are formed between the electrodes.
用の支持台において、前記上面に前記一対の電極間に位
置する溝を形成したことを特徴とする支持台。4. A support base for supporting a light emitting device, which comprises a pair of electrodes on an upper surface, wherein a groove located between the pair of electrodes is formed on the top surface.
用の支持台において、前記上面に前記一対の電極に対応
した一対の溝を形成したことを特徴とする支持台。5. A support base for supporting a light emitting device, which comprises a pair of electrodes on an upper surface thereof, wherein a pair of grooves corresponding to the pair of electrodes are formed on the upper surface.
て、前記上面の前記一対の電極の間に、互いに独立した
少なくとも2つの溝を形成したことを特徴とする支持
台。6. A support base having a pair of electrodes on an upper surface thereof, wherein at least two independent grooves are formed between the pair of electrodes on the upper surface.
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JP2001233983A JP2003046142A (en) | 2001-08-01 | 2001-08-01 | Light emitting device and support base used therefor |
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JP2001233983A JP2003046142A (en) | 2001-08-01 | 2001-08-01 | Light emitting device and support base used therefor |
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Family
ID=19065676
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