JP2002223014A - Magnetic detector - Google Patents
Magnetic detectorInfo
- Publication number
- JP2002223014A JP2002223014A JP2001019152A JP2001019152A JP2002223014A JP 2002223014 A JP2002223014 A JP 2002223014A JP 2001019152 A JP2001019152 A JP 2001019152A JP 2001019152 A JP2001019152 A JP 2001019152A JP 2002223014 A JP2002223014 A JP 2002223014A
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- thin film
- layer
- ferromagnetic thin
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 230000001603 reducing effect Effects 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 abstract description 16
- 230000004888 barrier function Effects 0.000 abstract description 7
- 229910003271 Ni-Fe Inorganic materials 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 abstract description 5
- 239000010936 titanium Substances 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 235000012054 meals Nutrition 0.000 abstract 1
- 239000013598 vector Substances 0.000 description 14
- 230000005415 magnetization Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁気検出装置に関
し、特にそのセンシング部のコンタクトに関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic detection device, and more particularly, to a contact of a sensing unit.
【０００２】[0002]
【従来技術】従来、強磁性体薄膜の磁界方向と電流方向
のなす角度によって抵抗値が変化することを利用し、被
検出対象の運動等を検出するＭＲＥ（強磁性磁気抵抗素
子）がある。2. Description of the Related Art Conventionally, there is an MRE (ferromagnetic magnetoresistive element) for detecting a motion or the like of an object to be detected by utilizing the fact that a resistance value changes depending on an angle between a magnetic field direction and a current direction of a ferromagnetic thin film.
【０００３】[0003]
【発明が解決しようとする課題】しかし、従来のＭＲＥ
の構造は、電極の下地の層が非常に酸化しやすいＮｉ−
Ｆｅによって形成されているため、コンタクトが不安定
になるという問題が生じている。However, the conventional MRE
The structure of Ni- is based on Ni-
Since it is formed of Fe, there is a problem that the contact becomes unstable.
【０００４】また、Ｎｉ−Ｆｅ層に酸化層ができること
により、Ｎｉ−Ｆｅ層と電極との密着性が悪化し、浮
き、剥離が発生するという問題が生じている。[0004] In addition, the formation of an oxide layer on the Ni-Fe layer deteriorates the adhesion between the Ni-Fe layer and the electrode, and causes a problem of floating and peeling.
【０００５】そこで本発明は、上記問題点に鑑み、良好
なコンタクトと密着性とを備えた磁気検出装置を提供す
ることを目的とする。In view of the above problems, an object of the present invention is to provide a magnetic detection device having good contact and good adhesion.
【０００６】[0006]
【課題を解決するための手段】請求項１に記載の磁気検
出装置は、還元作用のあるメタル層を、強磁性体薄膜層
と電極層との間に形成することを特徴とする。According to a first aspect of the present invention, there is provided a magnetic detecting device, wherein a metal layer having a reducing action is formed between a ferromagnetic thin film layer and an electrode layer.
【０００７】よって、強磁性体薄膜層の表面に形成され
る酸化膜をメタル層が還元し、メタル層が還元して取込
んだ酸化物は導体となり、良好なコンタクトを達成する
とともに、強磁性体薄膜層と電極層との密着性が向上す
る。Accordingly, the oxide layer formed on the surface of the ferromagnetic thin film layer is reduced by the metal layer, and the oxide obtained by the reduction of the metal layer becomes a conductor. The adhesion between the body thin film layer and the electrode layer is improved.
【０００８】請求項２に記載の磁気検出装置は、メタル
層の膜厚を２００Å以上にすることを特徴とする。According to a second aspect of the present invention, in the magnetic detection device, the thickness of the metal layer is set to 200 ° or more.
【０００９】メタル層の膜厚が薄いと均一な膜にならず
塊（島状）になってしまい、また、１００Å程度の膜厚
であっても均一な膜にはなるが、下部に形成された強磁
性体薄膜層の凹凸も考慮すると、膜としての機能を果た
すためには２００Å以上必要になる。When the thickness of the metal layer is small, the metal layer does not become a uniform film but becomes a lump (island). Even if the thickness is about 100 °, the film becomes a uniform film. In consideration of the unevenness of the ferromagnetic thin film layer, 200 ° or more is required to fulfill the function as a film.
【００１０】請求項３に記載の磁気検出装置は、強磁性
体薄膜層とメタル層との間に、導電性のあるメタル層の
酸化物を備えることを特徴とする。According to a third aspect of the present invention, there is provided a magnetic detecting device, wherein an oxide of a conductive metal layer is provided between the ferromagnetic thin film layer and the metal layer.
【００１１】導電性のある酸化物を備えることで、良好
なコンタクトを達成することが可能となる。Providing a conductive oxide makes it possible to achieve good contact.
【００１２】[0012]
【発明の実施の形態】従来、ＭＲＥは、磁界の振れ角が
小さい場合に出力変化が小さいという欠点があるため、
基板上に短絡電極を設けることにより、電流のベクトル
を磁化ベクトルに対して４５°方向に流し、傾きが急峻
な特性を得るバーバーポール構造を用いている。DESCRIPTION OF THE PREFERRED EMBODIMENTS Conventionally, the MRE has a disadvantage that the output change is small when the deflection angle of the magnetic field is small.
By providing a short-circuit electrode on the substrate, a current vector flows in a direction of 45 ° with respect to the magnetization vector, and a barber pole structure that obtains a characteristic with a steep inclination is used.
【００１３】そこで、まずバーバーポール構造の原理つ
いて図１を用いて説明する。図１（ａ）から図１（ｄ）
は汎用的なＭＲＥの磁界強度特性を示し、図２（ａ）か
ら図２（ｆ）はバーバーポール型ＭＲＥの磁界強度特性
を示す。The principle of the barber pole structure will now be described with reference to FIG. 1 (a) to 1 (d)
2 shows the magnetic field strength characteristics of a general-purpose MRE, and FIGS. 2A to 2F show the magnetic field strength characteristics of a Barber pole type MRE.
【００１４】尚、図中の実線矢印は磁化ベクトルを表
し、点線矢印は電流ベクトルを表し、白抜きの矢印は外
部磁界Ｈの強さを表している。また、１は長方形状のＭ
ＲＥであり、２は基板上に設けられた短絡電極である。The solid arrows in the figure represent the magnetization vectors, the dotted arrows represent the current vectors, and the white arrows represent the strength of the external magnetic field H. 1 is a rectangular M
RE is a short-circuit electrode provided on the substrate.
【００１５】図１（ａ）に示されるように、従来のＭＲ
Ｅにおいて、磁界のない場合、磁化は形状異方性により
長手方向を向いており、磁化ベクトルと電流ベクトルと
のなす角度θは０°（）である。しかし、図１（ｂ）
や図１（ｃ）に示されるように、外部磁界Ｈを強くして
いくと、磁化ベクトルと電流ベクトルとのなす角度θ
は、徐々に大きくなりθ＝９０°（）で飽和する。[0015] As shown in FIG.
In E, in the absence of a magnetic field, the magnetization is oriented in the longitudinal direction due to shape anisotropy, and the angle θ between the magnetization vector and the current vector is 0 ° (). However, FIG.
As shown in FIG. 1 and FIG. 1C, when the external magnetic field H is increased, the angle θ between the magnetization vector and the current vector is increased.
Gradually increases and saturates at θ = 90 ° ().
【００１６】図１（ｄ）に示されるように、ＭＲＥで
は、この磁気ベクトルと電流ベクトルとのなす角度θが
抵抗値を決めており、やの近辺では磁界変化の割合
に対して抵抗値の変化が少なく、角度θが４５°（）
の近辺で効率よく抵抗値が変化する。As shown in FIG. 1D, in the MRE, the angle θ between the magnetic vector and the current vector determines the resistance value. Little change, angle θ is 45 ° ()
The resistance value changes efficiently in the vicinity of.
【００１７】そこで、図２（ａ）から図２（ｅ）に示さ
れるように、短絡電極２を用いて、磁化ベクトルに対し
て電流ベクトル方向を斜め４５°方向に向けておくこと
で、図２（ｆ）に示されるように、磁界のない場合にお
いて図１（ｂ）の領域を使用し、効率のよい抵抗変化を
得ることを可能にしたのが、バーバーポール型ＭＲＥで
ある。Therefore, as shown in FIGS. 2 (a) to 2 (e), by using the short-circuit electrode 2, the current vector direction is obliquely 45 ° with respect to the magnetization vector. As shown in FIG. 2 (f), a barber-pole type MRE makes it possible to obtain an efficient resistance change using the region of FIG. 1 (b) in the absence of a magnetic field.
【００１８】バーバーポール型ＭＲＥでは、外部磁界Ｈ
を強くしていくと、磁化ベクトルと電流ベクトルとのな
す角度θは、からに示すとおりで（ｆ）を見てわか
るように付近の弱磁界で効率よく抵抗が変化する。In the Barber pole type MRE, the external magnetic field H
As the angle θ between the magnetization vector and the current vector is increased, the resistance changes efficiently with a weak magnetic field in the vicinity as shown in FIG.
【００１９】次に、図３（ａ）に本実施形態の平面図を
示し、（ｂ）にＡ−Ａ’の断面図を示す。Next, FIG. 3A shows a plan view of the present embodiment, and FIG. 3B shows a cross-sectional view taken along the line AA '.
【００２０】以下、本実施形態の製造工程について説明
する。Hereinafter, the manufacturing process of this embodiment will be described.
【００２１】まず、図３（ｂ）に示されるように、シリ
コン基板３上にシリコン酸化膜４を形成する。次に、磁
気抵抗素子膜には、磁歪の小さいＮｉ−Ｆｅからなる強
磁性体薄膜５を形成する。その表面を酸化膜や窒化膜な
どからなる絶縁分離層６で覆い、その絶縁分離層６にコ
ンタクトホール１０を開口する。First, as shown in FIG. 3B, a silicon oxide film 4 is formed on a silicon substrate 3. Next, a ferromagnetic thin film 5 made of Ni—Fe having small magnetostriction is formed on the magnetoresistive element film. The surface is covered with an insulating separation layer 6 made of an oxide film, a nitride film or the like, and a contact hole 10 is opened in the insulating separation layer 6.
【００２２】この際に、強磁性体薄膜５の形成からコン
タクトホール１０の形成までの工程中、Ｏ2アッシング
での自然酸化膜などが形成されることにより、強磁性体
薄膜５の表面に一切酸化膜を形成させないのは非常に困
難である。At this time, during the process from the formation of the ferromagnetic thin film 5 to the formation of the contact hole 10, a natural oxide film or the like is formed by O 2 ashing, so that the surface of the ferromagnetic thin film 5 is completely removed. It is very difficult not to form an oxide film.
【００２３】そこで、次に形成されるチタンタングステ
ン（ＴｉＷ）からなるバリアメタル層８を形成する前
に、還元作用が強く酸化物が導体となるチタン（Ｔｉ）
からなる還元メタル層７を２００Å以上形成する。Therefore, before forming the barrier metal layer 8 made of titanium tungsten (TiW) to be formed next, titanium (Ti), which has a strong reducing action and has an oxide as a conductor, is formed.
A reduced metal layer 7 of 200 ° or more is formed.
【００２４】よって、強磁性体薄膜５の表面に形成され
るＮｉ−Ｆｅ酸化膜を、還元メタル層７が還元し、還元
メタル層７が還元して取込んだ酸化物は導体となるた
め、良好なコンタクトを達成するとともに、強磁性体薄
膜５と、次に形成されるバリアメタル層８との密着性が
向上する。Therefore, since the reduced metal layer 7 reduces the Ni—Fe oxide film formed on the surface of the ferromagnetic thin film 5 and the reduced metal layer 7 reduces and takes in the oxide, it becomes a conductor. As well as achieving good contact, the adhesion between the ferromagnetic thin film 5 and the subsequently formed barrier metal layer 8 is improved.
【００２５】ここで、還元メタル層７を２００Å以上形
成する理由として、あまり薄いと均一な膜にならず塊
（島状）になってしまう。また、１００Å程度でも均一
な膜にはなるが、下の強磁性体薄膜層５の凹凸も考慮す
ると、膜として機能させるためには、２００Å以上必要
となる。Here, the reason why the reduced metal layer 7 is formed at 200 ° or more is that if it is too thin, it does not become a uniform film but becomes a lump (island shape). Although a uniform film can be obtained even at about 100 °, considering the unevenness of the ferromagnetic thin film layer 5 below, 200 ° or more is required to function as a film.
【００２６】その後、バリアメタル層８と、外部と電気
的接続をするために電極メタル層９を形成する。バリア
メタル層８は、還元メタル層７と電極層９とが合金にな
るのを防ぐために形成される。Thereafter, an electrode metal layer 9 is formed to electrically connect the barrier metal layer 8 to the outside. Barrier metal layer 8 is formed to prevent reduction metal layer 7 and electrode layer 9 from becoming an alloy.
【００２７】尚、本発明は、上記実施形態に限られるも
のではなく、様々な態様に適用可能である。The present invention is not limited to the above embodiment, but can be applied to various aspects.
【図１】汎用的なＭＲＥの磁界強度特性を示す図であ
る。FIG. 1 is a diagram showing a magnetic field strength characteristic of a general-purpose MRE.
【図２】バーバーポール型ＭＲＥの磁界強度特性を示す
図である。FIG. 2 is a diagram showing a magnetic field strength characteristic of a Barber pole type MRE.
【図３】（ａ）は本実施形態のバーバーポール型ＭＲＥ
の構造の平面図を、（ｂ）は断面図を示す図である。FIG. 3A is a barber pole type MRE of the present embodiment.
FIG. 3B is a plan view of the structure of FIG.
１…ＭＲＥ、 ２…短絡電極、 ３…シリコン基板、 ４…シリコン酸化膜、 ５…強磁性体薄膜（Ｎｉ−Ｆｅ）、 ６…絶縁分離層、 ７…還元メタル層（Ｔｉ）、 ８…バリアメタル層（ＴｉＷ）、 ９…電極層（Ａｌ−Ｓｉ）、 １０…コンタクトホール DESCRIPTION OF SYMBOLS 1 ... MRE, 2 ... Short circuit electrode, 3 ... Silicon substrate, 4 ... Silicon oxide film, 5 ... Ferromagnetic thin film (Ni-Fe), 6 ... Insulation separation layer, 7 ... Reduced metal layer (Ti), 8 ... Barrier Metal layer (TiW), 9 ... electrode layer (Al-Si), 10 ... contact hole
Claims (3)
有する絶縁層と、 前記開口領域上に形成されるとともに還元作用のあるメ
タル層と、 前記メタル層上に形成された電極層とを備えることを特
徴とする磁気検出装置。1. A ferromagnetic thin film layer formed on a substrate, an insulating layer formed on the ferromagnetic thin film layer and having an opening region, and formed on the opening region and having a reducing action. A magnetic detection device comprising: a certain metal layer; and an electrode layer formed on the metal layer.
ることを特徴とする請求項１に記載の磁気検出装置。2. The magnetic detection device according to claim 1, wherein the metal layer has a thickness of 200 ° or more.
間に導電性のある前記メタル層の酸化物を備えることを
特徴とする請求項１に記載の磁気検出装置。3. The magnetic detection device according to claim 1, further comprising an oxide of the metal layer having conductivity between the ferromagnetic thin film layer and the metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001019152A JP2002223014A (en) | 2001-01-26 | 2001-01-26 | Magnetic detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001019152A JP2002223014A (en) | 2001-01-26 | 2001-01-26 | Magnetic detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002223014A true JP2002223014A (en) | 2002-08-09 |
Family
ID=18885084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001019152A Pending JP2002223014A (en) | 2001-01-26 | 2001-01-26 | Magnetic detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002223014A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62194690A (en) * | 1986-02-20 | 1987-08-27 | Fujitsu Ltd | Magnetic reluctance element |
| JPH0191438A (en) * | 1987-10-02 | 1989-04-11 | Toshiba Corp | Manufacture of semiconductor device |
| JPH06260446A (en) * | 1993-03-05 | 1994-09-16 | Sony Corp | Manufacture of wiring structure |
-
2001
- 2001-01-26 JP JP2001019152A patent/JP2002223014A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62194690A (en) * | 1986-02-20 | 1987-08-27 | Fujitsu Ltd | Magnetic reluctance element |
| JPH0191438A (en) * | 1987-10-02 | 1989-04-11 | Toshiba Corp | Manufacture of semiconductor device |
| JPH06260446A (en) * | 1993-03-05 | 1994-09-16 | Sony Corp | Manufacture of wiring structure |
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