JP2002277859A - Method for manufacturing liquid crystal - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal which has a plastic substrate, having the same film characteristics as film formation on a glass substrate, even in the case of each film requiring heat treatment at a temperature higher than TG of the plastic substrate, and to provide its manufacturing method. SOLUTION: The method for manufacturing the liquid crystal device, where a liquid crystal layer is held between substrates, at least one of which is made of resin has a stage where a separation layer is formed on a substrate for formation, a stage where a material to be stripped which has at least a conductive film and an oriented film is formed on the separation layer, a stage where the substrate for formation is left in atmospheric gas, which selectively decomposes the separation layer, for a prescribed time, to bring about stripping in the separation layer and the material to be stripped is released from the substrate for formation, and a stage where the material to be stripped is stuck to a substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal device, and more particularly to a technique suitable for use in a liquid crystal device capable of applying a plastic substrate.

[0002]

2. Description of the Related Art FIG. 31 is a sectional view showing a schematic structure of a conventional general passive matrix type liquid crystal device. This figure shows a liquid crystal cell 1000 of a transmission type liquid crystal device. A liquid crystal layer 1003 made of STN (Super Twisted Nematic) liquid crystal or the like is sandwiched between a pair of substrates 1001 and 1002 made of a glass substrate or the like. It is sealed. A dye layer 1010 of red (R), green (G), blue (B) or the like is provided on a surface of the second substrate 1002 facing the first substrate 1001.
a color filter layer 1010 composed of a and a light-shielding layer (black matrix) 1010b, a plurality of electrodes 1006 are formed in a stripe shape thereon, and an alignment layer 1008 is formed thereon. Similarly, the first
A plurality of electrodes 1005 extending in a direction orthogonal to the electrodes 1006 of the second substrate 1002 are formed in stripes on a surface of the substrate 1001 facing the second substrate 1002, and an alignment layer 1007 is formed thereon. . Then, each substrate 10
A polarizing plate (not shown) is provided on the outer surface side of the first and second light emitting devices 01 and 1002. Reference numeral 1009 denotes a spacer for keeping the distance between the substrates (referred to as a cell gap) constant within the substrate surface. Here, a substrate such as a glass substrate or a quartz substrate has been conventionally selected as a substrate used in a normal liquid crystal device.

However, in recent years, with the spread of portable electronic devices such as small-sized portable information terminals, liquid crystal devices using a plastic film substrate have advantages such as light weight, thinner shape, no breakage, and display on a curved surface. The demand for is increasing. Therefore, for example, a thickness of 0.4 × 10 −3 m made of a transparent polymer such as polycarbonate, polyacrylate, polyethersulfone, and polyolefin is used.
There has been a demand for a plastic film of about (0.4 mm) or less to be used as a substrate of a substrate. However, adaptation of such a transparent resin substrate to a liquid crystal cell has not yet been realized.

[0004] The reason is as follows. FIG.
FIG. 11 is an explanatory diagram of a process for manufacturing a color filter layer in a conventional liquid crystal cell. In the manufacturing process of the color filter 1010, first, as shown in FIG. 7A, a red (R) dye layer 1010r is formed on the second substrate 1002 by patterning by photolithography. At this time, heat treatment was indispensable, and the temperature condition was set to about 220 ° C.

Then, as shown in FIG. 1B, when forming a green (G) dye layer 1010 g, a layer 1010 g ′ to become the green (G) dye layer 1010 g is formed on the entire surface of the substrate 1002. A film was formed and then patterned by photolithography. At this time, it is necessary to perform the heat treatment at about 220 ° C. After this,
Similarly, a blue (B) dye layer and a light-shielding layer (black matrix) 1010 b are formed to form a color filter layer 10.
Form 10.

The electrode 1006 is made of a transparent conductive material such as indium tin oxide (hereinafter, referred to as ITO). When the electrode made of ITO is formed,
Evaporation method, sputtering method, CVD (Chemical Vapor D
After a conductive film made of an electrode material such as ITO is formed on the entire surface of the substrate body 1002 by an eposition method or the like,
A predetermined photoresist is applied to the entire surface of the conductive film, and the photoresist is exposed and developed to form the photoresist in a predetermined pattern. Next, by etching the conductive film into a predetermined pattern, an electrode 1006 having a predetermined pattern was formed. Even when this conductive film is formed, a substrate heat treatment at about 200 ° C. is required in order to obtain a low-resistance conductive film. Further, the alignment layer 1008 is made of polyimide or the like, which is also 300 ° C. in the manufacturing process.
It is necessary to perform a degree of heat treatment.

[0007]

However, the above-mentioned transparent resin base material has a glass transition temperature TG of 15%.
Since it is about 0 ° C. to 200 ° C., the substantial heat resistance temperature is 1
When the temperature is about 25 ° C. to 160 ° C. and the heat treatment is performed at a higher temperature, adverse effects such as deformation of the base material occur. Therefore, when a resin base material is applied, the
There is a problem that it cannot withstand heat treatment conditions of about 150 ° C. or more. Further, when the heat treatment temperature at the time of forming each layer is lowered in order to improve the problem of the base material, the following problems have occurred.

First, when the heat treatment temperature at the time of forming the color filter layer 1010 is set to be lower than the heat resistance temperature of the transparent resin substrate of about 120 ° C., the dye layers 1010a are sufficiently stabilized by the heat treatment at that temperature. Not done. For this reason, for example, as shown in FIG. 32C, a green (G) color resist 1010g ″ remains on the unstabilized red (R) dye layer 1010r, and thus has a desired spectral characteristic. A color filter could not be formed.

If the substrate heating temperature during the ITO film formation is set to be lower than the heat-resistant temperature of the transparent resin substrate of about 120 ° C., the resistance value of the formed ITO increases, and for example, the sheet Only a value of about 30 to 40 Ω / □ can be obtained by resistance. As described above, the sheet resistance of 7 to 15 Ω / □ in the case where ITO is formed at a normal heat treatment temperature on a glass substrate is compared with the IT which is processed at a low temperature.
Since the resistance value of O becomes large, the voltage drop in the ITO portion becomes large, and the liquid crystal display device cannot be driven by a low driving voltage, and thus cannot be applied to a liquid crystal device which requires high definition.

The heat treatment temperature at the time of forming the alignment film 1008 is set to 120 ° C. which is the heat resistant temperature of the transparent resin substrate.
Even when the value was set to a value less than or equal to the value, sufficient film characteristics such as orientation could not be obtained.

The present invention has been made in order to solve the above-mentioned problems, and for example, a general plastic substrate or the like can be used.
It is an object of the present invention to provide a liquid crystal device having the same film characteristics as a film formed on a glass substrate, and a method for manufacturing the same, even for each film requiring the above heat treatment.

[0012]

According to a method of manufacturing a liquid crystal device of the present invention, there is provided a method of manufacturing a liquid crystal device in which at least one of a pair of substrates is formed of a resin and a liquid crystal layer is sandwiched between the substrates. A step of forming a separation layer on a formation substrate, a step of forming an object to be peeled having at least a conductive film and an alignment film on the separation layer, and a gas atmosphere for selectively decomposing the formation substrate to the separation layer The above object has been achieved by having a step of disassembling the separation layer to separate the object to be separated from the formation substrate and a step of attaching the object to the substrate. In the present invention, a means in which the gas is a halogen-based gas or a means in which the gas is a fluorine-based gas can be employed. Further, the gas of the present invention can be any one of argon fluoride, xenon fluoride, krypton fluoride, xenon chloride, and fluorine. The separation layer of the present invention is amorphous silicon,
It is composed of either single-crystal silicon or polycrystalline silicon, and is particularly preferably composed of amorphous silicon. The substrate of the present invention can be attached with an adhesive sheet. In the present invention, the conductive film is made of indium tin oxide, and its sheet resistance is preferably set to less than 30 Ω / □, more preferably, the sheet resistance is set to 15 Ω / □ or less. it can.
Further, means for forming a color filter layer can be adopted as the object to be peeled of the present invention. A reflection film may be formed on the object to be peeled according to the present invention. A passivation film may be laminated on a side of the object to which the substrate is attached, and the passivation film may be made of silicon oxide. In the present invention, a means in which the object to be peeled is laminated at least in the order of the conductive film and the alignment film on the substrate for formation, or the object to be peeled is at least the alignment film on the substrate for formation. , The conductive film can be selected in this order. In the present invention, the formation substrate may be set to the gas atmosphere in a state where the substrate is stuck on the object to be separated.

In the method for manufacturing a liquid crystal device according to the present invention,
A step of forming a separation layer on a formation substrate such as a glass substrate or a quartz substrate; a step of forming an object to be peeled having at least a conductive film and an alignment film on the separation layer; and selectively decomposing the separation layer. A step of maintaining the formation substrate in a gas atmosphere for a predetermined time, causing separation in the separation layer and separating the object to be separated from the formation substrate, and forming the object to be separated into a polycarbonate-based material and a polyacrylate-based material. 0.4 × 10-3m (0.4mm) made of transparent polymer such as polyethersulfone or polyolefin
Bonding a plastic substrate (resin substrate) having a gas barrier layer and a protective layer that are impermeable to gas on both sides of a plastic film of the following degree as a base material. In contrast to the case where the conductive film and the alignment film are formed directly on the film substrate, the temperature condition of the heat treatment in the object formation step is
Since it is not necessary to set the temperature below the heat-resistant temperature defined by the TG of the plastic film, it has a conductive film and an alignment film having desired film characteristics, and can be easily reduced in weight and thickness, does not crack, and has a curved surface display. It is possible to manufacture a liquid crystal device using a plastic film substrate having advantages such as possible.

Here, by applying a glass substrate, a quartz substrate or the like having excellent heat resistance as a forming substrate, it becomes possible to perform a heat treatment at a temperature higher than the heat resistance temperature defined by the TG of the plastic film. In the formation substrate such as glass, it is possible to repeat the formation and peeling of the object to be peeled,
Therefore, even when a high-temperature heat treatment such as that required when forming a quartz glass substrate is required, the cost can be reduced.

The present invention also adopts a means in which the gas is a halogen-based gas or a fluorine-based gas. Preferably, any one of argon fluoride, xenon fluoride, krypton fluoride, xenon chloride, and fluorine is used. By being one, the separation layer can be selectively decomposed, and the separation can be efficiently performed without affecting other portions of the object to be separated.

According to the present invention, the separation layer is made of amorphous silicon,
It is preferably made of either single-crystal silicon or polycrystalline silicon, particularly amorphous silicon, whereby the gas can selectively decompose this amorphous silicon. Thus, the object to be peeled can be peeled.

Here, xenon fluoride (Xenon fluoride; XeF2) dissociates in the vicinity of the separation layer as XeF2 → XeF + F, and fluorine (F) is converted to silicon (S) in the separation layer.
Combined with i) to form SiF4, and the separation layer is decomposed.

At this time, the selectivity of the above gas to amorphous silicon and others will be described. Xenon fluoride basically etches only α-Si, polycrystalline Si, and single-crystal Si. Therefore, the selectivity is quite 100
Close to. However, the etching rate decreases in the order of α-Si, polycrystalline Si, and single-crystal Si. That is, the selectivity for each layer of the array is approximately 100 for α-Si, polycrystalline Si, and single-crystal Si: 0 for SiO 2. Since the selectivity of xenon fluoride to amorphous silicon is high as described above, only the separation layer is selectively decomposed,
An object to be peeled can be peeled off. At this time, due to the difference in the selectivity as described above, in each configuration other than the separation layer, there is almost no influence by this gas.

According to the present invention, a plastic film substrate can be adhered to an object to be separated before being peeled off from the forming substrate or to an object to be peeled after being peeled off from the forming substrate by an adhesive sheet. . Here, the adhesive sheet is
The sheet is not limited to a specific sheet, and a sheet that can generally attach a thin film device to a plastic substrate can be applied as long as the sheet does not deviate from the gist of the present invention.

In the present invention, the conductive film is preferably made of indium tin oxide, and its sheet resistance is preferably set to less than 30 Ω / □, more preferably, the sheet resistance is set to 15 Ω / □ or less. This is a characteristic that can be obtained by heat treatment at about 200 ° C., which greatly exceeds the heat resistance temperature of the plastic film, and the effect of the voltage drop can be reduced by such a low resistance value. Thus, a high-definition liquid crystal device with a low driving voltage can be obtained. Further, a color filter layer is formed on the object to be peeled off of the present invention, and the necessary stability is obtained by completely removing the solvent in the color resist by a heat treatment at about 220 ° C. exceeding the heat resistance temperature of the plastic substrate. Becomes possible.

By forming a reflective film or a transflective film on the object to be peeled according to the present invention, a reflective liquid crystal device or a transflective liquid crystal device can be obtained. As the transflective film, there are a structure in which the film thickness is controlled, and a structure in which a hole or a slit is formed in a very small area in the total reflection film.

A passivation film made of SiO 2 is laminated on the side of the object to be peeled on which the substrate is attached, so that a conductive film or a TFT (Thin Film Transistor) is formed.
It is possible to prevent an adhesive sheet for directly attaching a plastic substrate to the portion of r), and to further reduce gas permeation and diffusion of impurities into the liquid crystal cell. At the same time, the object to be peeled can be protected in the above gas atmosphere due to the difference in the selectivity between Si and SiO2.

In the present invention, a plastic substrate is attached to the side from which the formation substrate has been peeled off by means of laminating the object to be peeled on the formation substrate at least in the order of the conductive film and the alignment film. Therefore, both the display substrate and the driving substrate, and any type of liquid crystal device of an active matrix and a passive matrix, a transmission type, a reflection type, a transflective type, a projection type, etc. It is also possible to apply to.

Further, the object to be peeled is laminated on the substrate for formation at least in the order of the orientation film and the conductive film, that is, by means for laminating in the reverse order of the substrate of a normal liquid crystal device. A display substrate and a driving substrate of a passive matrix type liquid crystal device are formed by setting the forming substrate to a gas atmosphere in a state where a plastic substrate is attached to an object to be separated before being separated from the substrate, and an active matrix. It can be applied to a display substrate of a liquid crystal device of the type.

In the present invention, a liquid crystal device can also be manufactured by combining these plastic substrates and ordinary glass substrates and bonding them together.
In this case, for example, an active-type driving substrate such as a TFT is formed on a glass substrate and manufactured, and a display substrate is formed in a reverse order, a plastic substrate is attached, and these are laminated to form a liquid crystal device. You can also.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] A first embodiment of a liquid crystal device and a method for manufacturing the same according to the present invention will be described below with reference to the drawings.

FIG. 30 is a flowchart showing a method of manufacturing a liquid crystal device according to the present invention. FIGS. 1 to 6 are schematic sectional views showing steps of a method of manufacturing a liquid crystal device according to the first embodiment. Symbol g1 denotes a formation substrate, g2 denotes a separation layer, and g4 denotes an object to be peeled. In this specification, reference numerals shown in [separation layer g2 forming step S1] and the like correspond to each step in the flowchart of FIG.

[Separation Layer g2 Forming Step S1] As shown in FIG. 1, one surface of the formation substrate g1 (separation layer formation surface g11)
Then, a separation layer (etched layer) g2 is formed. It is preferable that the formation substrate g1 has a large difference in selectivity with the separation layer g2 in a gas atmosphere described later. In this case, the selectivity of the formation substrate g1 is preferably extremely small with respect to the selectivity of the separation layer g2, and more preferably 0.1: 99.9 or less. If this selectivity is too high,
It is not preferable because the formation substrate g1 is affected while the separation layer g2 is peeled off.

Further, the forming substrate g1 is preferably made of a material having high reliability, particularly preferably a material having excellent heat resistance. The reason for this is that, for example, when an object to be peeled g4 or a passivation film (intermediate layer) g3 to be described later is formed, the process temperature becomes high depending on the type or formation method (for example, 350 to 1000 ° C.).
However, even in such a case, if the formation substrate g1 is excellent in heat resistance, the film formation conditions such as the temperature condition and the like in the formation of the object to be peeled g4 and the like on the formation substrate g1 are made of plastic. This is because the temperature can be set higher than the temperature condition specified by the heat-resistant temperature of the sheet, and the setting range is widened.

Further, the formation substrate g1 is provided with an object g4 to be peeled.
Assuming that the maximum temperature at the time of formation of Tmax is Tmax, the strain point is Tma
It is preferable that the material is composed of a material of x or more, and more specifically, the material of the formation substrate g1 has a strain point of 350 ° C. or more. Further, those having a temperature of 500 ° C. or more are more preferable. Examples of such a material include quartz glass, soda glass, Corning 7059 (trade name),
Heat-resistant glass such as NEC Glass OA-2 (trade name) may be mentioned.
At a process temperature of about 300 ° C. when forming the separation layer g2, the intermediate layer g3, and the object to be peeled g4, an inexpensive glass material having a lower melting point than the above melting point can be used as the formation substrate g1.

The thickness of the formation substrate g1 is not particularly limited, but is usually preferably about 0.1 to 5.0 mm, more preferably about 0.5 to 1.5 mm. . The thickness of the separation layer formation portion of the formation substrate g1 is:
Preferably it is uniform. In addition, the formation substrate g1 itself is not removed by etching or the like, but is separated from the separation layer g2 between the formation substrate g1 and the object to be peeled g4 to separate the formation substrate g1. And, for example, using a relatively thick substrate,
The range of options for the formation substrate g1 is also wide.

The separation layer formation surface g1 of the formation substrate g1
1 and the back surface g12 are not limited to a flat surface as shown, but may be a curved surface. In this case, it is possible to cope with a case where a plastic substrate described later has a curved surface.

Next, the separation layer g2 will be described. As described later, the separation layer g2 is decomposed by the gas to form an interface 2 between the separation layer g2 and the intermediate layer g3 or the object g4.
b, it has a property of causing peeling (hereinafter referred to as “interfacial peeling”), and preferably, it causes interface peeling by decomposing the separation layer g2 from the etching selectivity of gas.

Further, when the separation layer g2 is decomposed by gas, gas is released from the separation layer g2 generated by the reaction between the gas and the separation layer g2.

The composition of the separation layer g2 is, for example, amorphous silicon (a-Si). This amorphous silicon (amorphous silicon) is preferable because it has a higher selectivity for etching and can shorten the processing time in a gas atmosphere as compared with polycrystalline silicon and single crystal silicon. This processing time is equal to the CV of amorphous silicon.
It can be adjusted by appropriately setting the film forming conditions such as D, for example, conditions such as gas composition, gas pressure, gas atmosphere, gas flow rate, temperature, substrate temperature, and input power in CVD.

The thickness of the separation layer g2 varies depending on conditions such as the purpose of peeling, the composition of the separation layer g2, and the forming method.
Usually, it is preferably about 1 nm to 20 μm,
It is more preferably about nm to 2 μm, and further preferably about 40 nm to 1 μm. If the film thickness of the separation layer g2 is too small, the uniformity of film formation is impaired, and uneven peeling may occur. If the film thickness is too thick, good separation properties of the separation layer g2 are ensured. In addition, it is necessary to lengthen the treatment time in the gas atmosphere, and there is a possibility that the separation layer g2 remains on the object to be peeled g4 side and it is necessary to remove the separation layer g2, which is not preferable. The thickness of the separation layer g2 is preferably as uniform as possible.

The method of forming the separation layer g2 is not particularly limited, and is appropriately selected according to various conditions such as a film composition and a film thickness.
For example, CVD (MOCVD, low pressure CVD, ECR-C
VD), vapor deposition, molecular beam deposition (MB), sputtering, ion plating, various vapor phase film forming methods such as PVD, and the like, and a combination of two or more of these methods can be used. Low pressure CVD and plasma CVD
It is preferable to form a film.

[Step g3 for forming object g4 to be peeled off] Next, FIG.
As shown in FIG. 7, an object g4 to be peeled is formed on the separation layer g2. The object to be peeled g4 is, as described later, a transfer body (substrate).
6, which is a functional thin film or a thin film device formed on each substrate of the liquid crystal device as described later, and includes a conductive film made of ITO, an alignment film, a color filter layer, a driving circuit, and the like. Are included. At this time, a surface g4a of the object g4 on the separation layer g2 side.
, And at least an orientation film and a conductive film are laminated in this order from the upper surface g4b. That is, the surface g of the object g4
An alignment film is formed on 4a. As described later, such a functional thin film or thin film device usually has a temperature of 200 ° C. to 300 ° C. depending on a heat treatment temperature required for forming each film.
It is formed through a relatively high process temperature of about ° C or higher. Therefore, in this case, as described above, a highly reliable substrate that can withstand the process temperature is required as the formation substrate g1. Such an object to be peeled g4 is usually formed through a plurality of steps, as described later.

[Adhesive Layer g5 Forming Step S4, Transfer Body g6 Adhering Step S5] As shown in FIG. 3, an adhesive layer (adhesive sheet) g5 is formed on the object to be peeled g4, and the adhesive layer g5 is interposed therebetween. The transfer body g6 forming the substrate is bonded (joined). Adhesive layer g5
Preferred examples of the adhesive that constitutes include various curable adhesives such as a reaction curable adhesive, a thermosetting adhesive, a light curable adhesive such as an ultraviolet curable adhesive, and an anaerobic curable adhesive. No. As the composition of the adhesive, for example, epoxy-based,
Any material such as an acrylate type and a silicone type may be used. The formation of the adhesive layer g5 is performed by, for example, a coating method.

When the above-mentioned curable adhesive is used, for example, a curable adhesive is applied on an object g4 to be peeled, and a transfer member g6 described later is bonded thereon, and then cured according to the characteristics of the curable adhesive. The curable adhesive is cured by a method, and the object to be peeled g4 and the transfer body g6 are bonded and fixed.

When a photo-curable adhesive is used, the translucent transfer body g6 is disposed on the uncured adhesive layer g5, and then the curing light is irradiated from above the transfer body g6 to cure the adhesive. Preferably. If the forming substrate g1 has a light-transmitting property, it is preferable to cure the adhesive by irradiating curing light from both sides of the forming substrate g1 and the transfer body g6. Note that, unlike the illustration, the transfer body g6
An adhesive layer g5 may be formed on the side, and the object to be peeled g4 may be adhered thereon. Further, an intermediate layer as described above may be provided between the object g4 and the adhesive layer g5.

As the transfer body (substrate) g6, the glass transition temperature TG having a lower heat-resistant temperature than that of the above-mentioned forming substrate and having a glass transition temperature TG of 15
Polycarbonate type having a temperature of about 0 ° C. and an actual heat resistant temperature of about 125 ° C., a polyacrylate type having a glass transition temperature TG of about 170 ° C. and an actual heat resistant temperature of about 150 ° C., and a glass transition temperature TG of about 200 ° C. The thickness is made of a transparent polymer such as a polyethersulfone type having an actual heat resistance temperature of about 160 ° C. and a polyolefin type having a glass transition temperature TG of about 140 ° C. and an actual heat resistance temperature of about 120 ° C. 0.4 × 10-3m (0.4
mm) or less, a plastic substrate (transparent resin substrate) formed by laminating a gas barrier layer and a protective layer that do not allow gas to pass through on both sides of a plastic film of about mm or less. Note that such a substrate may be a flat plate or a curved plate.

Here, the reason why the resin substrate as described above can be applied as the transfer body g6 is that, in the present invention, an object g4 to be peeled is formed on the formation substrate g1 side, and then the object g4 is transferred to the transfer body g6. This is because the properties required for the transfer body g6, particularly the heat resistance, do not depend on the temperature conditions and the like when the object to be peeled g4 is formed. Therefore, the object g
When the maximum temperature at the time of formation of No. 4 is defined as Tmax, the transfer body g
As the constituent material of No. 6, those having a glass transition point (TG) or a softening point of Tmax or less can be used. That is,
As described above, the transfer body g6 can be made of a material having a glass transition point (TG) or softening point of about 200 ° C. or less. As a result, the mechanical properties of the transfer body g6 include:
It can have a certain degree of rigidity (strength) as a characteristic of plastic, as well as flexibility and elasticity.

[Dry etching step S6, object to be peeled g]
4 Stripping Step S7] As shown in FIG. 4, the formation substrate g1 is set in an etching gas atmosphere. This etching gas is
Optionally, the separation layer g2 is decomposed. Thereby, as shown in FIG. 5, interface separation occurs in the separation layer g2, and when the formation substrate g1 is separated from the transfer body g6, the object g4 is separated from the formation substrate g1 and the transfer body g6 is separated. Is transferred to

Here, FIG. 6 shows that the interface g2b is formed on the separation layer g2.
5 shows a case where interfacial peeling has occurred. The principle of the separation of the separation layer g2 from the interface occurs because the separation layer g2 is selectively etched.

As the etching gas, a halogen-based gas or a fluorine-based gas can be used.
Argon fluoride, xenon fluoride, krypton fluoride,
By using any one of xenon chloride and fluorine, the separation layer can be selectively decomposed, and separation can be efficiently performed without affecting other portions of the object to be separated.

Here, the selectivity of the above gas to amorphous silicon and others will be described. Xenon fluoride basically etches only α-Si, polycrystalline Si, and single-crystal Si. Therefore, the selectivity is quite 100
Close to. However, the etching rate decreases in the order of α-Si, polycrystalline Si, and single-crystal Si. That is, the selectivity for each layer of the array is approximately 100 for α-Si, polycrystalline Si, and single-crystal Si: 0 for SiO 2. As described above, since the selectivity of xenon fluoride to amorphous silicon is high, only the separation layer g2 is selectively decomposed, and the object g4 can be separated. At this time, due to the difference in the selectivity as described above, the separation object g4 adjacent to or near the separation layer g2, the formation substrate g1 and the like are hardly decomposed, that is, the separation layer g2 is not deteriorated or damaged. g2 can be peeled off.

Further, xenon fluoride (Xenon fluoride; XeF2) dissociates in the vicinity of the separation layer g2 as XeF2 → XeF + F, and fluorine (F) is bonded to silicon (Si) in the separation layer g2. , SiF4, and the separation layer g2 is decomposed.

Finally, as shown in FIG.
The separation layer 2 adhering to 1 is removed by, for example, a method such as cleaning, etching, ashing, polishing or a combination thereof. When the formation substrate g1 is made of an expensive or rare material such as quartz glass, the formation substrate g1 can be reused (recycled).

After the above steps, the object g4
Transfer to the transfer body g6 is completed. Then, the layer g to be peeled
4 surface treatment, object to be peeled g4 and transfer body (substrate)
6 is subjected to a predetermined process. Thereby, as shown in FIG. 6, the plastic substrate g6 used as the transfer body
At least one substrate of a liquid crystal panel in which a conductive film such as ITO and an alignment film are laminated in this order from the side can be used. Here, an alignment film is located on the surface g4a of the object g4. After dispersing spacers on this liquid crystal substrate, this substrate and another substrate are attached via a sealing material,
Liquid crystal is injected between these substrates to form a liquid crystal layer. Thereafter, a liquid crystal device is manufactured by attaching an optical element such as a polarizing plate or a retardation plate to the outside of the substrate.

According to the present invention, the object to be peeled g4 having the conductive layer made of ITO, the color filter layer, the alignment film and the like formed thereon is not directly formed on a plastic substrate, but is formed on glass or the like having a high heat-resistant temperature. In order to form on the substrate g1 via the separation layer g2 and to separate the object g4 from the separation layer g2, regardless of the heat treatment temperature of the plastic film, Since the temperature conditions necessary to maintain the characteristics of each film can be set, high reliability which cannot be obtained with a liquid crystal device using a conventional plastic substrate can be maintained.

In the present embodiment, the object g4 to be peeled is
The display substrate of the passive matrix type liquid crystal device is formed by laminating at least the alignment film and the conductive film on the formation substrate g1 in the order of the normal liquid crystal panel substrate. The present invention can be applied to a driving substrate, a display substrate of an active matrix type liquid crystal device, and a transmission type, a reflection type, a transflective type, a projection type, or the like.

Further, in the present embodiment, between the object g4 and the adhesive layer (adhesive sheet) g5, that is, the surface g4b of the object g4, no gas permeates the liquid crystal when manufactured as a liquid crystal device. Layer (passivation film) described later in the second embodiment as a gas barrier layer for
A layer similar to that of g3 can be formed. When this intermediate layer g3 is located on the separation object g4 side of the separation layer g2, it can function as a protective film when etching the separation layer.

Further, by a method similar to the method described above,
The transfer may be repeated two or more times.

Further, a large transparent resin substrate (for example, an effective area of 900 mm × 1600 mm) is used as a transfer body g6, and a small glass substrate (formation substrate) g1 (for example, an effective area of 45 mm × 40 mm) is formed. The unit to be peeled g4 (thin film transistor) is sequentially transferred to an adjacent position a plurality of times (for example, about 800 times) to form the object to be peeled g4 over the entire effective area of the large transparent resin substrate. A liquid crystal display having the same size as that of the transparent resin substrate can be manufactured.

[Second Embodiment] Hereinafter, a liquid crystal device according to a second embodiment of the present invention and a method for manufacturing the same will be described with reference to the drawings. In the present embodiment, the steps up to the [separation layer g2 forming step S1] shown in FIGS.
As in the embodiment, the separation layer g2 is formed. 7 to 1
2 is a schematic cross-sectional view showing the steps of the method for manufacturing the liquid crystal device according to the present embodiment. In these drawings, the same reference numerals are given to components that are substantially the same as those in the first embodiment, and descriptions thereof are omitted. .

[Intermediate Layer g3 Forming Step S2] As shown in FIG. 7, an intermediate layer (passivation film) is formed on the separation layer g2.
g3 is formed. The intermediate layer g3 is formed, for example, as a protective layer that physically or chemically protects an object to be peeled g4 described below during manufacturing or use,
An insulating layer, a barrier layer for etching gas, a barrier layer for preventing migration of components to or from the object g4, and a gas that does not permeate the liquid crystal when manufactured as a liquid crystal device. To perform at least one of functions as a gas barrier layer.

The composition of the intermediate layer g3 is appropriately set according to the purpose of its formation. For example, it is formed between the separation layer g2 made of amorphous silicon and the object g4 to be a liquid crystal panel such as a thin film transistor. In the case of the intermediate layer 3, silicon oxide such as SiO 2 is used. In this case, the influence of the etching gas, which is xenon fluoride, on the object to be peeled g4 can be prevented from the difference in the selectivity described above.

The thickness of the intermediate layer g3 is appropriately determined depending on the purpose of forming the intermediate layer g3 and the degree of the function that can be exhibited, but it is usually preferably about 10 nm to 5 μm.
The thickness is more preferably about 20 nm to 0.5 μm in order to reduce the rise of the driving voltage at the thickness at which the intermediate layer g3 is formed on the ITO electrode. Also, the method of forming the intermediate layer g3 is as follows.
The same method as the formation method described for the separation layer g2 may be used. The intermediate layer g3 may be formed of two or more layers having the same or different composition. Also,
Also in the present embodiment, the object to be peeled g4 may be formed directly on the separation layer g2 without forming the intermediate layer g3.

[Step g3 for forming object g4] Next, FIG.
As shown in FIG. 7, an object g4 to be peeled is formed on the intermediate layer g3. Here, the laminated structure of the object to be peeled g4 is assumed to include a plurality of layers such as a conductive film made of ITO, an alignment film, a color filter layer, and a driving circuit. , Is different from the first embodiment.

The object to be peeled g4 of the present embodiment is a layer to be transferred to the transfer body g6, as will be described later, and is a functional thin film or thin film device formed on each substrate of the liquid crystal device. And a plurality of layers such as a conductive film, an alignment film, a color filter layer, and a driving circuit. Here, at least a conductive film and an alignment film are laminated in this order from the surface g4a on the intermediate layer g3 side of the object g4 to the upper surface g4b. As will be described later, such a functional thin film or thin film device is formed through a relatively high process temperature of about 200 ° C. to 300 ° C. or more in relation to a heat treatment temperature required for forming each film. . Therefore, in this case, as described above, a highly reliable substrate that can withstand the process temperature is required as the formation substrate g1. Such an object to be peeled g4 is usually formed through a plurality of steps, as described later.

[Transfer Body g6 'Contacting Step S5'] As shown in FIG. 9, the transfer body g6 'is placed on the object g4 to be peeled.
As the transfer body g6 ′ of the present embodiment, a substrate other than silicon and having a smooth surface, for example, a glass plate, a metal plate such as SUS, a plastic plate, or the like can be used. An adhesive layer of a sheet is provided. The adhesive layer has a smaller adhesive strength than the adhesive strength of each layer of the object and the adhesive layer between the object and the substrate.
Alternatively, a plastic film having a certain degree of rigidity may be easily laminated on the object to be separated.

[Dry etching step S6, object to be peeled g]
4 stripping step S7] As shown in FIG. 10, the formation substrate g1
Is an etching gas atmosphere. This etching gas selectively decomposes the separation layer g2. As a result, similar to [Dry etching step S6, object g4 peeling step S7] of the first embodiment shown in FIGS. 30 and 5, interface separation occurs in the separation layer g2, so that the formation substrate g1 and the transfer body g6 ′, the object to be peeled g4 becomes the substrate g for formation.
1 and is transferred to the transfer body g6 ′. At this time, xenon fluoride is also used as an etching gas.

[Adhesive Layer g8 Forming Step S8, Substrate g9 Sticking Step S9] Next, as shown in FIG. 11, an adhesive layer (adhesive sheet) g8 is formed on the surface g3a side of the intermediate layer g3. The substrate g9 is adhered (joined) through. Preferred examples of the adhesive forming the adhesive layer g8 are similar to those of the adhesive layer g5 of the first embodiment, and description thereof will be omitted. The formation of the adhesive layer g8 is performed by, for example, a coating method.

As the substrate g9, a polycarbonate resin having a lower heat-resistant temperature than that of the above-mentioned forming substrate, a glass transition temperature TG of about 150 ° C. and an actual heat-resistant temperature of about 125 ° C., and a glass transition temperature TG of about 170 ° C. A polyacrylate type having an actual heat resistance temperature of about 150 ° C.,
Polyethersulfone type having a glass transition temperature TG of about 200 ° C. and an actual heat resistant temperature of about 160 ° C., and polyolefin type having a glass transition temperature TG of about 140 ° C. and an actual heat resistant temperature of about 120 ° C. A plastic film having a thickness of about 0.4 × 10 −3 m (0.4 mm) or less made of a transparent polymer is used as a base material.
A plastic substrate (transparent resin substrate) formed by laminating a gas barrier layer that does not allow gas permeation and a protective layer to be laminated is exemplified. Note that such a substrate may be a flat plate or a curved plate.

Here, the reason why the resin substrate as described above can be applied as the substrate g9 is that, in the present invention, the object g4 is formed on the formation substrate g1 and then the object g4 is formed.
Is transferred to the substrate g9 via the transfer body g6.
This is because the characteristics required in 9, especially the heat resistance, do not depend on the temperature conditions and the like when forming the object to be peeled g4. Therefore,
Assuming that the maximum temperature at the time of forming the object to be peeled g4 is Tmax, the glass transition point (TG) is used as a constituent material of the substrate g9.
Alternatively, those having a softening point of Tmax or less can be used. That is, as described above, the transfer body g6 can be made of a material having a glass transition point (TG) or softening point of about 200 ° C. or less. As a result, as the mechanical characteristics of the substrate g9, the substrate g9 can have a certain degree of rigidity (strength) as a characteristic of plastic, and can have flexibility and elasticity.

[Transfer Body g6 'Peeling Step S10] Next, as shown in FIG. 12, the transfer body g6' and the object g4 to be peeled are separated.

After the above steps, the object g4
Is transferred to the substrate g9. Then, the layer g4 to be separated
And a predetermined treatment is performed on the object to be peeled g4 and the substrate g9. Thus, at least one of a liquid crystal panel and a conductive film such as ITO, which is laminated in this order from the plastic substrate g9, can be obtained. Here, an alignment film is located on the surface g4b of the object g4. After dispersing spacers on this liquid crystal substrate, this substrate and another substrate are attached via a sealant, and liquid crystal is injected between these substrates to form a liquid crystal layer.
Thereafter, a liquid crystal device is manufactured by attaching an optical element such as a polarizing plate or a retardation plate to the outside of the substrate.

In the present embodiment, the same effects as those of the first embodiment can be obtained, and the object g4 itself on which the conductive layer made of ITO, the color filter layer, the alignment film and the like are formed is directly applied to the plastic substrate g9. Rather than being formed on the substrate, it is formed on a forming substrate g1 such as glass having a high heat resistance temperature via a separation layer g2, and the object g4 is separated from the separation layer g2. Can be set to the temperature conditions necessary to maintain the characteristics of each film regardless of the heat resistance temperature of the plastic film. Reliability can be maintained.

In this embodiment, the object g
Since the substrate 4 itself is transferred to the plastic substrate g9 via the transfer body g6 ′, the lamination order can be performed in the same process as when forming a film on a normal glass substrate when forming the object g4. Therefore, TFT (Thin Film Tran)
It can also be applied to (sistor) type liquid crystal panels.

In the present embodiment, the object g4 to be peeled is
Both the display substrate and the drive substrate, which are laminated at least in the order of the alignment film and the conductive film on the formation substrate g1,
In addition, the present invention can be applied to a liquid crystal device of any type of an active matrix and a passive matrix, and a transmissive type, a reflective type, a transflective type, a projection type, or the like.

Third Embodiment Hereinafter, a third embodiment of the liquid crystal device according to the present invention and a method for manufacturing the same will be described with reference to the drawings.

The present embodiment is a simple matrix type liquid crystal device and a method of manufacturing the same. The embodiment will mainly be described with respect to a portion to be peeled g4, and the other first embodiment shown in FIGS. Components similar to those of the second embodiment shown in FIGS. 7 to 12 are denoted by the same reference numerals, and description thereof will be omitted.

In the present embodiment, FIG.
As in the first embodiment, the separation layer g2 is formed on the formation substrate g1 up to the [separation layer g2 formation step S1] shown in FIG. 13 to 15 are schematic cross-sectional views illustrating steps of a method of manufacturing the liquid crystal device according to the present embodiment. FIG. 16 is a cross-sectional view illustrating the liquid crystal device according to the present embodiment. g42 is an electrode (conductive film), and g43 is a color filter layer.

[Step g3-1 for forming object g4 to be peeled]
As shown in FIG. 13A, 1.0 to 50 × 10 −8 m (0.04 m) is formed on the separation layer g2 as the first layer of the object to be peeled g4.
An alignment film g41 made of an alignment polymer such as polyimide having a thickness of about 1 to 0.5 μm) is formed. The alignment film g41 is formed at least over the entire portion serving as the display region. At this time, 300 ° C.
The heat treatment is performed at a temperature condition of the order. Therefore, in this case, as described above, a highly reliable substrate that can withstand the process temperature is required as the formation substrate g1.

[Step g3-2 of forming object g4]
As shown in FIG. 13B, a transparent conductive material such as ITO is formed on the alignment film g41 as a second layer of the object to be peeled g4.
Alternatively, a conductive film g42 made of an opaque conductive material that reflects light such as aluminum or silver is formed. Here, a transparent conductive material that transmits light, such as ITO, is selected in a portion to be a display region. However, when the display region is adapted to a display region of a reflection type driving substrate and a lead wiring, etc., this limit is not applied. Absent. At this time, sputtering method, CVD method,
By performing a heat treatment at a temperature of about 200 ° C. by a method such as a vapor deposition method, the sheet resistance of the ITO is reduced by 7%.
Ω / □ to 15Ω / □ (about 150 nm in film thickness) can be set. Therefore, in this case, as described above, a highly reliable substrate that can withstand the process temperature is required as the formation substrate g1.

[Step g3-3 of forming object g4]
As shown in FIG. 14, an object to be peeled g4 is placed on the conductive film g42.
As a third layer, a dye layer g43a such as red (R), green (G), and blue (B) and a light-shielding layer (black matrix) g4
A color filter layer g43 of 3 m is formed.

[Step S3-3A of Forming Object g4 to be Exfoliated] First, as shown in FIG. 14A, a red (R) dye layer g43r is formed on the conductive film g42 using a color resist. At this time, patterning is performed by a photolithography method.
A heat treatment at about 0 ° C. is performed.

[Step g3-3B for forming object g4] Next, a green (G) dye layer g43g is formed on the conductive film g42. At this time, as shown in FIG. 14B, a color resist layer g43g ′ is formed on the entire surface of the conductive film g42 and the red (R) dye layer g43r.
As shown in (1), patterning is performed by removing unnecessary portions of the color resist layer g43g 'by photolithography. At this time, as processing such as post baking, 220
Perform heat treatment at about ° C. Here, since the red (R) dye layer g43r is heat-treated at a temperature setting of about 220 ° C., it is sufficiently stabilized, and a green (G) color resist is formed on the red (R) dye layer g43r. Layer g43g '
Will not remain. Accordingly, the color purity of the red (R) dye layer g43r as the color filter layer g43 can be maintained in a desired state.

[Step S3-3C of Forming Object g4 to be Exfoliated] Next, similarly, as shown in FIG.
42, a blue (B) dye layer g4 on the color resist
3b is formed. At this time, patterning is performed by a photolithography method, and at this time, heat treatment at about 220 ° C. is performed as processing such as post baking. Here, a red (R) dye layer g43r and a green (G) dye layer g43
g has been heat-treated at a temperature setting of about 220 ° C., so that the red (R) dye layer g4 is sufficiently stabilized.
No blue (B) color resist layer remains on the 3r and green (G) dye layers g43g. Therefore, the color purity of the red (R) dye layer g43r and the green (G) dye layer g43g as the color filter layer g43 can be maintained in a desired state.

[Step S3-3D of Forming Object g4 to be Exfoliated] Next, similarly, as shown in FIG.
A black matrix g43m is formed on the reference numeral 42 using a color resist. At this time, patterning is performed by a photolithography method, and at this time, heat treatment at about 220 ° C. is performed as processing such as post baking. Here, a red (R) dye layer g43r and a green (G) dye layer g4
3 g and the blue (B) dye layer g43b are heat-treated at a temperature of about 220 ° C., and are therefore sufficiently stabilized. The red (R) dye layer g43r and the green (G) dye layer g43g , And blue (B) dye layer g43b does not leave a black matrix color resist layer. Therefore, a red (R) dye layer g43r, a green (G) dye layer g43g, and a green (G) dye layer g43g as the color filter layer g43,
The color purity of the blue and blue (B) pigment layers g43b can be maintained in a desired state.

Through the above steps, an object g4 to be peeled is formed. Here, on this color resist layer g43, a layer similar to the intermediate layer (passivation film) g3 in the above-described second embodiment can be formed as a gas barrier layer. Further, for the reflection type liquid crystal panel, a reflection film made of Al or the like can be formed on the color filter layer g43.

[Adhesive Layer g5 Forming Step S4, Transfer Body g6 Adhering Step S5] As shown in FIG. 15, an adhesive layer (adhesive sheet) g5 is formed on the object g4 to be peeled, and The transfer body (substrate) g6 is bonded (joined). At this time, processing is performed in the same manner as in the first embodiment shown in FIG. [Dry etching step S6, object to be peeled g4, peeling step S7] Thereafter, the formation substrate g1 is set to an etching gas atmosphere.
This etching gas selectively decomposes the separation layer g2 and separates the object g4 and the formation substrate g1 from the separation layer g2. Next, the alignment polymer film (alignment film) g41 made of polyimide or the like is rubbed with a cloth or the like on the surface g4a to perform an alignment treatment of the alignment polymer film, thereby manufacturing the substrate g6A of the liquid crystal panel. .

Then, in the same manner, the color filter layer g
One substrate g6B of the liquid crystal panel is formed by forming an object to be peeled g4 without 43, peeling the surface, and performing surface treatment.

Here, a method of manufacturing the plastic substrate g6 will be described. First, after forming a flat plastic film made of a transparent polymer such as polycarbonate, polyacrylate, polyethersulfone, and polyolefin, a polyvinyl alcohol-based resin layer is formed on at least one surface of the plastic film. A gas barrier layer is formed by applying or sputtering silicon dioxide or the like. Finally, a protective layer made of a phenoxy resin or the like is formed on the surface of the gas barrier layer, and the substrate body g6 is manufactured.

Next, a liquid crystal device 40 is manufactured from the substrates g6A and g6B as shown in FIG. Substrate g6
After the spacers 45 are sprayed on B, the substrate g6A is adhered to the substrate g6B via the sealant 44 so as to face the substrate g6B, and liquid crystal is injected between the substrates g6A and g6B to form a liquid crystal layer 46. Thereafter, the liquid crystal device 40 is manufactured by attaching optical elements such as a polarizing plate and a retardation plate outside the substrates g6A and g6B.

In the present embodiment, it is possible to easily produce a simple matrix liquid crystal device in which the resistance value of ITO is kept low by using the same plastic substrate as that of the first embodiment, and it is possible to produce the same effect. Membrane g4
Since the heat treatment under the temperature condition of about 200 ° C. can be performed during the film formation of No. 2, the sheet resistance of this ITO can be set to a low value of 15 Ω / □ or less at a film thickness of about 150 nm. Therefore, since the liquid crystal display device can be driven with a low driving voltage, it can be applied to a liquid crystal device which is required to have a high definition, and the performance as a liquid crystal device is comparable to that of a glass substrate, and is lightweight. ,
A plastic substrate having advantages such as easy thinning, no cracking, and display of a curved surface can be applied.

Further, in this embodiment, when forming the color filter layer g43, a heat treatment at a temperature condition of about 220 ° C. can be performed, so that each red (R) Pigment layer g43
r, the color purity of the green (G) dye layer g43g and the color purity of the blue (B) dye layer g43b can be maintained in desired states. Therefore, while maintaining the purity of the color of the color filter at the same level as that of the glass substrate, which was impossible to manufacture conventionally, it is easy to reduce the weight and thickness, it does not break, it can display curved surfaces, etc. It is possible to manufacture a liquid crystal device using a plastic substrate having the advantages of (1).

Further, since the heat treatment temperature at the time of forming the alignment film g41 can be set to about 300 ° C., necessary film characteristics such as orientation can be sufficiently maintained at the same level as that of the glass substrate. While light weight, easy to thin, no crack,
It is possible to manufacture a liquid crystal device using a plastic substrate which has advantages such as display on a curved surface.

In the present embodiment, the substrate g6B can be transferred twice by forming an adhesive layer (adhesive sheet) g8 as in the second embodiment.
It is also possible to use B as a glass substrate and not transfer without forming an adhesive layer (adhesive sheet) g5. This embodiment can also be applied to a transmission type, a reflection type, a transflective type, a projection type, or the like.

[Fourth Embodiment] Hereinafter, a fourth embodiment of the electro-optical device and the method of manufacturing the same according to the present invention will be described with reference to the drawings. In the present embodiment, an active matrix type liquid crystal device using a TFT (transistor element) as a switching element will be described as an example of the electro-optical device. Also in this embodiment, FIGS.
Components that are substantially the same as those of the first to third embodiments shown in FIG. 6 are denoted by the same reference numerals, and description thereof is omitted.

(Structure of Electro-Optical Device) First, the structure of the electro-optical device of the embodiment will be described with reference to a liquid crystal device. The electro-optical device (liquid crystal device) of the present embodiment includes a TFT array substrate (electro-optical device substrate) manufactured by the method of manufacturing an electro-optical device substrate of the present embodiment.

FIG. 17 shows an equivalent circuit of various elements, wiring, and the like in a plurality of pixels formed in a matrix forming a pixel portion (display area) of the liquid crystal device. Also, FIG.
T on which data lines, scanning lines, pixel electrodes, light shielding films, etc. are formed
FIG. 4 is an enlarged plan view showing a plurality of pixel groups adjacent to each other on the FT array substrate. FIG. 19 is a sectional view taken along the line AA ′ of FIG. 17 to 19, the scale of each layer and each member is different in order to make each layer and each member have a size that can be recognized in the drawings.

In FIG. 17, a plurality of pixels formed in a matrix forming a pixel portion of a liquid crystal device are composed of a plurality of pixel electrodes 9a formed in a matrix and a TFT (transistor element) for controlling the pixel electrodes 9a. The data line 6a to which the image signal is supplied is connected to the TFT 3
0 is electrically connected to the source. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. . Also, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulsed manner in this order at a predetermined timing. It is configured.

The pixel electrode 9a is electrically connected to the drain of the TFT 30 and has a switching element TF
By closing the switch for a certain period of time T30, the image signals S1, S2,
..., Sn is written at a predetermined timing. Pixel electrode 9a
Image signal S of a predetermined level written on the liquid crystal through
, Sn are held for a certain period of time between a later-described counter electrode formed on a later-described counter substrate.

The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level.
Enables gradation display. In the normally white mode, the transmitted light quantity of the incident light decreases according to the applied voltage, and in the normally black mode, the transmitted light quantity of the incident light increases according to the applied voltage. Light having a contrast ratio according to the image signal is emitted from the liquid crystal device.

Here, a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode is provided in order to prevent a display defect such as a decrease in contrast ratio or a flicker called flicker due to a leak of the held image signal. And a storage capacitor 70 is added in parallel. For example, the voltage of the pixel electrode 9a is held by the storage capacitor 70 for a time that is three orders of magnitude longer than the time when the voltage is applied to the data line. This allows
The holding characteristics are further improved, and a liquid crystal device having a high contrast ratio can be realized.

Next, a planar structure in a region (pixel portion) where a transistor element is formed on the TFT array substrate will be described in detail with reference to FIG. As shown in the figure, a plurality of transparent pixel electrodes 9a (outlined by dotted lines 9a ') are formed in a matrix in a transistor element formation region (pixel portion) on a TFT array substrate of a liquid crystal device. Are provided, and the data line 6a, the scanning line 3a, and the capacitor line 3b are provided along the vertical and horizontal boundaries of the pixel electrode 9a. The data line 6a is electrically connected to a source region described later in the semiconductor layer 1a of the single crystal silicon layer via the contact hole 5, and the pixel electrode 9a is electrically connected to the source layer in the semiconductor layer 1a through the contact hole 8. It is electrically connected to a drain region described later. Further, the scanning line 3a is arranged so as to face a channel region (a hatched region on the upper right in the figure) of the semiconductor layer 1a, and the scanning line 3a functions as a gate electrode.

The capacitance line 3b has a main line portion extending substantially linearly along the scanning line 3a (that is, the scanning line 3a in a plan view).
(A first region formed along the data line 6a) and a protruding portion (upward in the figure) protruding along the data line 6a from a point intersecting the data line 6a (ie, the data line 6a extending along the second region 6a).

A plurality of first light-shielding films (light-shielding layers) 11a are provided in a region indicated by oblique lines rising to the right in the drawing. More specifically, the first light-shielding film 11a is provided at a position where the TFT including the channel region of the semiconductor layer 1a in the pixel portion covers the TFT array substrate when viewed from the substrate body side, which will be described later. A main line portion linearly extending along the scanning line 3a opposite to the main line portion of the line 3b, and protruding from an intersection with the data line 6a to an adjacent step side (ie, downward in the drawing) along the data line 6a. And a projected portion. The tip of the downward protruding portion in each stage (pixel row) of the first light-shielding film 11a overlaps the tip of the upward protruding portion of the capacitor line 3b in the next stage below the data line 6a. A contact hole 13 for electrically connecting the first light-shielding film 11a and the capacitance line 3b to each other is provided in the overlapping portion.
Is provided. That is, in the present embodiment, the first light-shielding film 11 a is electrically connected to the preceding or subsequent capacitive line 3 b by the contact hole 13.

Next, a sectional structure in a pixel portion of the liquid crystal device will be described with reference to FIG. As shown in the figure, in a liquid crystal device, a liquid crystal layer 50 is sandwiched between a TFT array substrate 10 and an opposing substrate 20 arranged to face the TFT array substrate. The TFT array substrate 10 is made of polycarbonate, polyacrylate, polyethersulfone,
0.4 thickness made of transparent polymer such as polyolefin
A substrate made of a plastic substrate (transparent resin substrate) having a plastic film of about × 10-3 m (0.4 mm) or less as a base material, and a gas barrier layer and a protective layer impermeable to gas are laminated on both surfaces thereof. The main body 10A, the adhesive layer (adhesive sheet) g8 and the intermediate layer g3 formed on the liquid crystal layer 50 side and the pixel electrode 9a, the TFT (transistor element) 30, and the alignment film 16 formed on the liquid crystal layer 50 side surface are formed. The opposing substrate 20 includes a substrate body 20A made of a plastic substrate equivalent to the substrate body 10A, an adhesive layer (adhesive sheet) g8 and an intermediate layer g3 formed on the liquid crystal layer 50 side thereof, and the liquid crystal layer 50 thereof. Counter electrode (common electrode) 21 and alignment film 22 formed on side surface
And the subject.

The pixel electrode 9a is provided on the surface of the substrate body 10A of the TFT array substrate 10 on the side of the liquid crystal layer 50, and the liquid crystal layer 50 is subjected to a predetermined alignment treatment such as a rubbing treatment. An alignment film 16 is provided. The pixel electrode 9a has a sheet resistance of 15Ω / □ or less, specifically, 7
It is composed of a transparent conductive film of ITO (indium tin oxide) set to Ω / □, and the alignment film 16 is composed of an organic film such as polyimide. Also, the substrate body 1
On the surface of the liquid crystal layer 50 at 0A, as shown in FIG.
At a position adjacent to each pixel electrode 9a, a pixel switching TFT 30 for controlling switching of each pixel electrode 9a is provided.

On the other hand, an opposing electrode (common electrode) 21 is provided on the entire surface of the opposing substrate 20 on the liquid crystal layer 50 side of the substrate body 20A, and a rubbing treatment is applied to the liquid crystal layer 50 side. There is provided an alignment film 22 that has been subjected to a predetermined alignment process such as. The counter electrode 21 has an IT having a sheet resistance of 15Ω / □ or less, specifically, 7Ω / □.
The alignment film 22 is formed of an organic film such as polyimide, for example. Further, on the surface of the substrate body 20A on the liquid crystal layer 50 side, as shown in FIG. 19, a second light shielding film 23 is provided in a region other than the opening region of each pixel portion. By providing the second light-shielding film 23 on the opposing substrate 20 side in this manner, incident light from the opposing substrate 20 side can be applied to the channel region 1 of the semiconductor layer 1a of the pixel switching TFT 30.
a 'and LDD (Lightly Doped Drain) regions 1b and 1
c can be prevented from entering, and the contrast ratio can be improved.

A seal formed between the peripheral edges of the TFT array substrate 10 and the opposing substrate 20 having the pixel electrode 9a and the opposing electrode 21 arranged in such a manner as to oppose each other is provided between the two substrates. A liquid crystal (electro-optical material) is sealed in a space surrounded by a material (not shown), and a liquid crystal layer (electro-optical material layer) 50 is formed. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and assumes a predetermined alignment state by the alignment films 16 and 22 in a state where no electric field is applied from the pixel electrode 9a.
The sealing material is made of an adhesive such as a photo-curing adhesive or a thermosetting adhesive for bonding the TFT array substrate 10 and the opposing substrate 20 at their peripheral edges. Spacers such as glass fibers and glass beads for adjusting the distance between them to a predetermined value are mixed.

As shown in FIG. 19, a first light-shielding film (light-shielding layer) 11a is provided on the surface of the substrate body 10A of the TFT array substrate 10 on the liquid crystal layer 50 side at a position corresponding to each pixel switching TFT 30. Is provided. The first light-shielding film 11a is preferably formed of a simple metal, an alloy, a metal silicide, or the like, including at least one of Ti, Cr, W, Ta, Mo, and Pd, which are preferably opaque refractory metals. By forming the first light-shielding film 11a from such a material, the high temperature in the step of forming the pixel switching TFT 30 after the step of forming the first light-shielding film 11a is formed on the surface of the substrate main body 10A of the TFT array substrate 10. The processing can prevent the first light shielding film 11a from being broken or melted.

In the present embodiment, since the pixel electrode 9a and the counter electrode 21 are made of ITO having a sheet resistance of 15 Ω / □ or less, specifically, 7 Ω / □, a low driving voltage is required for a liquid crystal display device. It can be applied to liquid crystal devices that require high definition, and the performance as a liquid crystal device is not inferior to that of a glass substrate. A plastic substrate capable of displaying a curved surface can be provided.

(Method of Manufacturing Electro-Optical Device) Next, a method of manufacturing a liquid crystal device having the above structure will be described with reference to FIGS.
This will be described with reference to FIG.

FIGS. 20 to 25 show a part of the TFT array substrate in each step, as in FIG.
It is a process drawing shown corresponding to A 'section. 20 to 2
5, the illustration of the formation substrate g1 and the separation layer g2 is omitted for simplification.

In this embodiment, the steps up to the [intermediate layer g3 forming step S2] shown in FIGS.
As in the embodiment, the intermediate layer g3 is formed. Next, [Step S3 for forming object g4 to be peeled] shown in FIGS.
In the same manner as in the step, an object g4 to be peeled is formed on the intermediate layer g3.

First, as shown in FIG. 20A, an insulator layer 12 is formed on the entire surface of the intermediate layer g3 on which the first light-shielding film 11a is formed by a sputtering method, a CVD method, or the like. As a material of the insulator layer 12, silicon oxide, silicon nitride, NSG (non-doped silicate glass), PSG (phosphorus silicate glass), BS
High-insulating glass such as G (boron silicate glass) and BPSG (boron phosphorus silicate glass) can be exemplified.

Next, as shown in FIG. 20B, a single-crystal silicon layer of about 200 nm ± 5 nm is formed on the insulator layer 12 and a photolithography step, an etching step, etc. The semiconductor layer 1a having a predetermined pattern as described above is formed. That is, in particular, the capacitance line 3 under the data line 6a
b along the scanning line 3a and the region in which the capacitor line 3b is formed.
Are formed in a region where the pixel switching TFT 30 is formed.
The first storage capacitor electrode 1f extending from the semiconductor layer 1a is formed.

Next, as shown in FIG. 20C, the first storage capacitor electrode 1f together with the semiconductor layer 1a constituting the pixel switching TFT 30 is heated to a temperature of about 850 to 1300 ° C.
Preferably, thermal oxidation is performed at a temperature of about 1000 ° C. for about 72 minutes to form a thermal oxide film having a relatively thin thickness of about 60 nm, and a gate insulating film 2 for capacitance formation together with the gate insulating film 2 of the pixel switching TFT 30. The film 2 is formed. As a result, the semiconductor layer 1a and the first storage capacitor electrode 1f
The thickness of the gate insulating film 2 is about 30 to 170 nm.
Has a thickness of about 60 nm.

Next, as shown in FIG. 21A, a resist film 301 is formed at a position corresponding to the N-channel semiconductor layer 1a, and a dopant of a group V element such as P is formed on the P-channel semiconductor layer 1a. 302 at a low concentration (eg,
P ions at an acceleration voltage of 70 keV, 2 × 1011 / cm
2). Next, as shown in FIG. 2B, a resist film is formed at a position corresponding to the P-channel semiconductor layer 1a (not shown), and a dopant 303 of a group III element such as B is added to the N-channel semiconductor layer 1a. At a low concentration (for example, B ions at an accelerating voltage of 35 keV, 1
(Doping amount of × 10 12 / cm 2). Next, as shown in FIG. 3C, a resist film 305 is formed on the surface of the substrate 10 except for the end of the channel region 1a 'of each semiconductor layer 1a for each of the P channel and the N channel. The dopant 306 of a group V element such as P having a dose of about 1 to 10 times that of the step shown in FIG. 6A and the doping amount of the N channel about 1 to 10 times that of the step shown in FIG. Of a group III element such as B. Next, as shown in FIG. 4D, in order to reduce the resistance of the first storage capacitor electrode 1f formed by extending the semiconductor layer 1a, the scanning line 3a (gate electrode) on the surface of the intermediate layer g3 is formed.
A resist film 307 (wider than the scanning line 3a) is formed in a portion corresponding to
At a low concentration (for example, P ions at an accelerating voltage of 70 keV, 3 × 10 14 /
(with a doping amount of cm 2).

Next, as shown in FIG. 22A, a contact hole 13 reaching the first light-shielding film 11a is formed in the first interlayer insulating film 12 by dry etching such as reactive etching, reactive ion beam etching, or wet. It is formed by etching. At this time, there is an advantage that opening the contact hole 13 or the like by anisotropic etching such as reactive etching or reactive ion beam etching can make the opening shape almost the same as the mask shape.
However, if the dry etching and the wet etching are performed in combination, the contact holes 13 and the like can be tapered, so that there is an advantage that disconnection during wiring connection can be prevented.

Next, as shown in FIG.
After the polysilicon layer 3 is deposited to a thickness of about 350 nm by the VD method or the like, phosphorus (P) is thermally diffused to make the polysilicon film 3 conductive. Alternatively, P ions are added to the polysilicon film 3.
May be used. Thereby, the conductivity of the polysilicon layer 3 can be increased. Next, as shown in FIG. 22C, the capacitor lines 3b are formed along with the scanning lines 3a having a predetermined pattern as shown in FIG. After that, the polysilicon remaining on the back surface of the intermediate layer g3 is removed by etching while covering the surface of the intermediate layer g3 with a resist film.

Next, as shown in FIG. 22D, in order to form a P-channel LDD region in the semiconductor layer 1a, N
The position corresponding to the semiconductor layer 1a of the channel is defined by the resist film 3.
09, and using a scanning line 3a (gate electrode) as a diffusion mask, a dopant 310 of a group III element such as B is first added at a low concentration (for example, BF2 ions are accelerated to 90 keV at an accelerating voltage of 3 × 1013 / cm2. Do) dope,
A lightly doped P-channel source region 1b and a lightly doped drain region 1c are formed. Subsequently, as shown in FIG. 22E, a P-channel high-concentration source region 1d is formed in the semiconductor layer 1a.
In order to form the high-concentration drain region 1e, a position corresponding to the N-channel semiconductor layer 1a is
And the scanning line 3a (not shown)
A state in which a resist layer is formed on the scanning line 3a corresponding to the P channel with a wider mask,
Group element dopant 311 at a high concentration (for example, BF2
The ions are accelerated at an accelerating voltage of 90 keV, 2 × 10 15 / cm 2
At a doping dose of.

Next, as shown in FIG. 23A, a P-type region is formed in the semiconductor layer 1a in order to form an N-channel LDD region.
A position corresponding to the semiconductor layer 1a of the channel is covered with a resist film (not shown), and using the scanning line 3a (gate electrode) as a diffusion mask, a dopant 60 of a group V element such as P at a low concentration (for example, P ion Is 70 keV acceleration voltage, 6
× 10 12 / cm 2), and a lightly doped N channel source region 1 b and a lightly doped drain region 1.
Form c. Subsequently, as shown in FIG. 23 (b), in order to form the N-channel high-concentration source region 1d and the high-concentration drain region 1e in the semiconductor layer 1a, a resist 62 is formed with a mask wider than the scanning line 3a. After being formed on the scanning line 3a corresponding to the N channel, a dopant 61 of a group V element such as P is also applied at a high concentration (for example, P ions
Doping (accelerating voltage of 0 keV, doping amount of 4 × 10 15 / cm 2).

Next, as shown in FIG. 23C, a normal pressure or low pressure CVD method, a TEOS gas, or the like is applied so as to cover the capacitance line 3b and the scanning line 3a together with the scanning line 3a in the pixel switching TFT 30. Using NSG, PS
A second interlayer insulating film 4 made of a silicate glass film such as G, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like is formed. The thickness of the second interlayer insulating film 4 is about 500 to
1500 nm is preferable, and 800 nm is more preferable. Thereafter, an annealing process at about 850 ° C. is performed for about 20 minutes to activate the high concentration source region 1d and the high concentration drain region 1e.

Next, as shown in FIG. 23D, a contact hole 5 for the data line 31 is formed by dry etching such as reactive etching or reactive ion beam etching or by wet etching. Further, a contact hole for connecting the scanning line 3a and the capacitance line 3b to a wiring (not shown) is also formed in the second interlayer insulating film 4 in the same process as the contact hole 5.

Next, as shown in FIG. 24A, a light-shielding A is formed on the second interlayer insulating film 4 by a sputtering process or the like.
1 as a metal film 6 having a thickness of about 100 to 700 nm, preferably about 350 nm.
Then, as shown in FIG. 24B, a data line 6a is formed by a photolithography process, an etching process and the like.

Next, as shown in FIG. 24 (c), NSG, PSG, BSG,
A third interlayer insulating film 7 made of a silicate glass film such as BPSG, a silicon nitride film, a silicon oxide film, or the like is formed. The thickness of the third interlayer insulating film 7 is about 500 to 1500 n.
m is preferable, and 800 nm is more preferable.

Next, as shown in FIG. 25A, in the pixel switching TFT 30, a contact hole 8 for electrically connecting the pixel electrode 9a and the high concentration drain region 1e is formed by reactive etching and reactive etching. It is formed by dry etching such as reactive ion beam etching.

Next, as shown in FIG. 25B, a transparent conductive thin film 9 of ITO or the like is formed on the third interlayer insulating film 7 by sputtering at about 200 ° C. for about 50 to 200 nm.
Then, as shown in FIG. 25C, a pixel electrode 9a is formed by a photolithography process, an etching process, and the like. When the liquid crystal device of the present embodiment is a reflection type liquid crystal device, the pixel electrode 9a may be formed of an opaque material having a high reflectance such as Al. continue,
A coating liquid for a polyimide-based alignment film is applied on the pixel electrode 9a, and is subjected to a heat treatment at about 200 ° C. to form an alignment film 16 (FIG. 16).
Reference).

Thereafter, the transfer body g6 ′ is placed on the object g4 in the same manner as in the [transfer body g6 ′ placement step S5 ′] of the second embodiment shown in FIGS. 30 and 9, and FIG. Similarly to the [dry etching step S6 and the peeling object g4 peeling step S7] of the second embodiment, after the etching with xenon fluoride is performed, the peeling object g4 is transferred to the transfer body g6 ′. Next, the adhesive layer g8 of the second embodiment shown in FIG.
As in the case of the forming step S8 and the substrate g9 attaching step S9], an adhesive layer (adhesive sheet) g8 is formed on the surface g3a side of the intermediate layer g3 to bond (join) the substrate g9, and the second embodiment shown in FIG. In the same manner as in the form [transfer body g6 'peeling step S10], the transfer body g6' and the object g4 are separated, and then rubbed in a predetermined direction so as to have a predetermined pretilt angle or the like. Surface treatment.

As described above, the TFT array substrate (electro-optical device substrate) 10 is manufactured.

Next, the method for manufacturing the counter substrate 20 and the TF
A method for manufacturing a liquid crystal device from the T array substrate 10 and the counter substrate 20 will be described. Counter substrate 2 shown in FIG.
For 0, a light-transmitting resin substrate equivalent to the substrate main body 10A is prepared as the substrate main body 20A, and the separation layer g
2. On the surface of the formation substrate g1 on which the intermediate layer g3 has been formed, a second light-shielding film 23 and a second light-shielding film as a peripheral part to be described later are formed as an object to be peeled g4. Second light shielding film 2
The third light-shielding film 3 and a peripheral light-shielding film to be described later are formed through a photolithography process and an etching process after sputtering a metal material such as Cr, Ni, or Al. These second light-shielding films may be formed of a material such as resin black in which carbon, Ti, or the like is dispersed in a photoresist, in addition to the above-described metal materials.

Thereafter, a transparent conductive thin film of ITO or the like is deposited on the entire surface of the formation substrate g1 by sputtering or the like at a temperature of about 300 ° C. to a thickness of about 50 to 200 nm, thereby forming a counter electrode. An electrode 21 is formed.
Further, a coating liquid for an alignment film such as polyimide is applied to the entire surface of the counter electrode 21 and heat-treated at about 200 ° C. to form an alignment film 22 (see FIG. 19). Then, TF
An adhesive layer (adhesive sheet) g8 is formed in the same manner as the T-array substrate 10, and a plastic substrate g9 is adhered via a forming substrate g1 and a transfer body g6 'to perform a surface treatment. The counter substrate 20 is manufactured as described above.

Lastly, the TFT array substrate 10 and the counter substrate 20 manufactured as described above are separated from the alignment films 16 and 22.
Are attached to each other with a sealing material so as to face each other, and a liquid crystal having a predetermined thickness is sucked into a space between both substrates by a method such as a vacuum suction method. By forming the layer 50, a liquid crystal device having the above structure is manufactured.

In the present embodiment, the same effects as those of the first to third embodiments can be obtained, and the TFT array substrate 10 which requires a higher temperature heat treatment than the simple matrix substrate is replaced with a glass forming substrate. A plastic substrate that can be easily reduced in weight and thickness, does not break, and can display a curved surface while maintaining the characteristics of each layer to be formed can be provided.

(Overall Configuration of Liquid Crystal Device) FIGS. 26 and 2 show the overall configuration of the liquid crystal device of the present embodiment configured as described above.
This will be described with reference to FIG. FIG. 26 is a plan view of the TFT array substrate 10 viewed from the counter substrate 20 side, and FIG.
FIG. 27 is a sectional view taken along line HH ′ of FIG. 26 including the counter substrate 20.

In FIG. 26, a sealing material 52 is provided on the surface of the TFT array substrate 10 along the edge thereof, and as shown in FIG.
The counter substrate 20 having substantially the same contour as that of the sealing material 5
2 is fixed to the TFT array substrate 10. FIG.
As shown in FIG. 6, a sealing material 5
A second light-shielding film 53, which is made of the same or different material as the second light-shielding film 23, is provided in parallel with the inside of the second light-shielding film 23.

In the TFT array substrate 10, a region outside the sealing material 52 is provided with a data line driving circuit 101.
The mounting terminals 102 are provided along one side of the TFT array substrate 10, and the scanning line driving circuit 104 is provided along two sides adjacent to the one side. Scanning line 3a
If the delay of the scan signal supplied to the
It goes without saying that the scanning line driving circuit 104 may be provided on only one side. Further, the data line driving circuits 101 may be arranged on both sides along the side of the display region (pixel portion). For example, the odd-numbered data lines 6a supply an image signal from a data line driving circuit arranged along one side of the display area, and the even-numbered data lines 6a are arranged along the opposite side of the display area. An image signal may be supplied from the provided data line driving circuit. If the data lines 6a are driven in a comb-tooth shape in this manner, the area occupied by the data line driving circuit can be expanded, so that a complicated circuit can be formed.

Further, on one remaining side of the TFT array substrate 10, the scanning line driving circuits 104 provided on both sides of the display area are provided.
A plurality of wirings 105 for connecting between them are provided,
Further, a precharge circuit may be provided so as to be hidden under the second light-shielding film 53 as a peripheral parting. Further, at least one corner portion between the TFT array substrate 10 and the counter substrate 20 is formed.
In the places, the TFT array substrate 10 and the opposing substrate 20
There is provided a conductive material 106 for establishing electrical continuity between the conductive material and the conductive material. Further, on the surface of the TFT array substrate 10, an inspection circuit or the like for inspecting the quality, defects, and the like of the liquid crystal device during manufacturing or shipping may be further formed. Further, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the surface of the TFT array substrate 10, for example, TAB
A drive LSI mounted on a (tape automated bonding substrate) may be electrically and mechanically connected via an anisotropic conductive film provided in a peripheral region of the TFT array substrate 10.

On the side of the opposing substrate 20 on which light is incident and on the side of the TFT array substrate 10 on which light is emitted, for example, a TN (twisted nematic) mode, STN
(Super TN) mode, D-STN (dual scan-STN) mode and other operation modes, and normally white mode / normally black mode.
A polarizing film, a retardation film, a polarizing means and the like are arranged in a predetermined direction.

When the liquid crystal device of the present embodiment is applied to a color liquid crystal projector (projection display device), three liquid crystal devices are used as RGB light valves, and each panel has an RGB color valve. The light of each color decomposed via the dichroic mirror for decomposition is respectively incident as projection light. Therefore, in that case, the color filter is not provided on the opposing substrate 20 as described in the above embodiment. However, even if an RGB color filter is formed along with the protective film in a predetermined area facing the pixel electrode 9a where the second light-shielding film 23 is not formed on the surface of the counter substrate 20 on the liquid crystal layer 50 side of the substrate body 20A. Good. With such a configuration, the liquid crystal device of the above-described embodiment can be applied to a color liquid crystal device such as a direct-view or reflection type color liquid crystal television other than the liquid crystal projector.

Further, one pixel per pixel is provided on the surface of the counter substrate 20.
A micro lens may be formed so as to correspond to each of them. By doing so, by improving the light collection efficiency of the incident light,
A bright liquid crystal device can be realized. Furthermore, the counter substrate 20
A plurality of interference layers having different refractive indices may be deposited on the surface of the dichroic filter to form a dichroic filter that produces RGB colors by using light interference. According to the counter substrate with the dichroic filter, a brighter color liquid crystal device can be realized.

In the liquid crystal device according to the present embodiment,
As in the conventional case, the incident light is made to enter from the counter substrate 20 side.
Therefore, the incident light may be made incident from the TFT array substrate 10 side and emitted from the counter substrate 20 side.

(Electronic Apparatus) As an example of an electronic apparatus using the liquid crystal device (electro-optical device) of each of the above embodiments, a configuration of a projection display device will be described with reference to FIG.

In FIG. 28, the projection type display device 1100
Prepares three liquid crystal devices of the above embodiment, and
FIG. 3 is a schematic configuration diagram of an optical system of a projection type liquid crystal device used as the liquid crystal devices 962R, 962G, and 962B for B.

The light source device 920 and the uniform illumination optical system 923 are employed in the optical system of the projection display device of this embodiment. Then, the projection display apparatus uses the uniform illumination optical system 9.
A color separation optical system 92 as a color separation unit that separates a light beam W emitted from 23 into red (R), green (G), and blue (B).
4, three light valves 925R, 925G, and 925B as modulation means for modulating the color light beams R, G, and B;
A color synthesizing prism 910 as a color synthesizing means for re-synthesizing the modulated color luminous flux, and a projection surface 10
A projection lens unit 906 is provided as projection means for performing enlarged projection on the surface of the projection lens 0. Further, a light guide system 927 for guiding the blue light flux B to the corresponding light valve 925B is also provided.

The uniform illumination optical system 923 includes two lens plates 921 and 922 and a reflection mirror 931. The two lens plates 921 and 922 are arranged so as to be orthogonal to each other with the reflection mirror 931 interposed therebetween. Uniform illumination optical system 923
The two lens plates 921 and 922 each include a plurality of rectangular lenses arranged in a matrix. The light beam emitted from the light source device 920 is transmitted to the first lens plate 92.
The light is split into a plurality of partial light beams by one rectangular lens.
Then, these partial light beams are divided into three light valves 925R and 925R by the rectangular lens of the second lens plate 922.
Superimposed around 5G and 925B. Therefore, by using the uniform illumination optical system 923, even when the light source device 920 has an uneven illuminance distribution in the cross section of the emitted light beam, the three light valves 925R, 925G, and 925B are used.
Can be illuminated with uniform illumination light.

Each color separation optical system 924 includes a blue-green reflecting dichroic mirror 941, a green reflecting dichroic mirror 942, and a reflecting mirror 943. First, in the blue-green reflecting dichroic mirror 941, the blue light beam B and the green light beam G included in the light beam W are reflected at right angles, and head toward the green reflecting dichroic mirror 942. The red light beam R passes through the mirror 941, is reflected at a right angle by the rear reflection mirror 943, and is emitted from the emission unit 944 of the red light beam R to the prism unit 910 side. Next, in the green reflection dichroic mirror 942, only the green light flux G among the blue and green light fluxes B and G reflected by the blue-green reflection dichroic mirror 941 is reflected at a right angle, and the color is emitted from the emission part 945 of the green light flux G. The light is emitted to the side of the combining optical system. The blue light flux B that has passed through the green reflection dichroic mirror 942 is emitted from the emission section 946 of the blue light flux B to the light guide system 927 side. In this example,
From the light emitting portion of the light beam W of the uniform illumination optical element, the light emitting portions 944, 945, and 94 of the respective color light beams in the color separation optical system 924.
6 are set to be approximately equal.

The red and green luminous flux R of the color separation optical system 924
Condensing lenses 951 and 952 are arranged on the emission sides of the G emission sections 944 and 945, respectively. Therefore,
The red and green luminous fluxes R and G emitted from the respective emission sections are incident on these condenser lenses 951 and 952 and are parallelized.
The red and green light fluxes R and G thus collimated enter the light valves 925R and 925G and are modulated, and image information corresponding to each color light is added. That is, the switching of these liquid crystal devices is controlled by driving means (not shown) according to image information.
The modulation of each color light passing therethrough is performed. On the other hand, the blue light flux B is transmitted through the light guide system 927 to the corresponding light valve 9.
25B, where it is similarly modulated according to image information. In addition, the light valve 925R of this example,
925G and 925B further include an entrance-side polarization unit 960R, 960G and 960B, and an exit-side polarization unit 96, respectively.
This is a liquid crystal light valve including 1R, 961G, 961B, and liquid crystal devices 962R, 962G, 962B disposed therebetween.

The light guide system 927 is provided with a light emitting section 94 for the blue light beam B.
No. 6, a condenser lens 954 disposed on the exit side, an incident-side reflection mirror 971, an exit-side reflection mirror 972, an intermediate lens 973 disposed between these reflection mirrors, and a front side of the light valve 925B. And a condenser lens 953. The blue light flux B emitted from the condenser lens 946 is transmitted through the light guide system 927 to the liquid crystal device 962B.
And modulated. The optical path length of each color beam, that is,
Each liquid crystal device 962R, 962G, 9
The distance to 62B is the longest for the blue luminous flux B, and therefore the loss of light quantity of the blue luminous flux is the largest. However, by interposing the light guide system 927, the loss of light amount can be suppressed.

Each light valve 925R, 925G, 92
The color light fluxes R, G, and B modulated through 5B are incident on a color combining prism 910, where they are combined. Then, the light combined by the color combining prism 910 is enlarged and projected on the surface of the projection surface 100 at a predetermined position via the projection lens unit 906.
Although not shown, since the liquid crystal device and the polarizing means are formed separately from each other, an air layer is formed between the liquid crystal device and the polarizing means. By sending air such as cool air to the liquid crystal device, a rise in the temperature of the liquid crystal device can be further prevented, and a malfunction due to a rise in the temperature of the liquid crystal device can be prevented.

In the present embodiment described above, the liquid crystal panel used for the transmission type liquid crystal device of the active matrix system has been described for convenience as a liquid crystal driving system. The image display method is not limited to the above-described embodiment, and can be applied to both color display and monochrome display, and is not limited to the transmissive type. Needless to say, a reflection type, a transflective type, a projection type, or the like may be used.

(Other Electronic Apparatus) As another example of an electronic apparatus using the liquid crystal device (electro-optical device) of each of the above embodiments, see FIG. 29 for the configuration of a portable electronic apparatus such as a small portable information terminal. Will be explained. FIG. 29A is a perspective view illustrating an example of a mobile phone. In FIG. 29A, reference numeral 1400 indicates a mobile phone main body, and reference numeral 1401
Denotes a liquid crystal display unit using the above liquid crystal display device. FIG. 29B is a perspective view illustrating an example of a wristwatch-type electronic device. In FIG. 29B, reference numeral 1300 denotes a watch main body, and reference numeral 1301 denotes a liquid crystal display unit using the above-described liquid crystal display device. FIG. 29C shows a word processor, a personal computer, and a PDA (Parsonal Disital Assistan).
FIG. 2 is a perspective view showing an example of a portable information processing device such as t). In FIG. 29C, reference numeral 1200 denotes an information processing device, reference numeral 1202 denotes an input unit such as a keyboard, and reference numeral 1.
Reference numeral 204 denotes an information processing apparatus main body, and reference numeral 1206 denotes a liquid crystal display unit using the above liquid crystal display device.

The electronic equipment shown in FIGS.
Since a liquid crystal display portion using the liquid crystal device of the above embodiment is provided, a plastic substrate is applied at a low driving voltage and in a state where spectral characteristics are maintained and high definition is achieved, so that the weight is reduced, It is possible to realize an electronic device that has advantages such as easy thinning, no breakage, and display on a curved surface, and the effect is particularly remarkable in terms of a screen portion. Note that the technical scope of the present invention is not limited to the above embodiment, and various changes can be made without departing from the spirit of the present invention.

[0149]

According to the liquid crystal device, the method of manufacturing the same, and the electronic apparatus of the present invention, a step of forming a separation layer on a forming substrate such as a glass substrate or a quartz substrate, and forming at least a conductive film and an alignment on the separation layer A step of forming an object to be peeled having a film, maintaining the formation substrate in a gas atmosphere for selectively decomposing the separation layer for a predetermined time, causing separation in the separation layer, and removing the object to be peeled off. A plastic film substrate comprising: a step of separating the object from the formation substrate; and a step of attaching the object to be peeled to a plastic substrate (resin substrate) having a plastic film made of a transparent polymer as a base material. In contrast to the case where a conductive film and an alignment film are formed directly on the substrate, the temperature condition of the heat treatment in the object to be peeled is set to a heat-resistant temperature defined by the TG of the plastic film. Since there is no need to set the following, it has a conductive film having desired film characteristics, an alignment film, and a color filter layer, and has advantages such as light weight, easy thickness reduction, no cracking, and display of a curved surface. This has the effect that a liquid crystal device using a plastic film substrate can be manufactured.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing steps of a method for manufacturing a liquid crystal device according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view showing steps of a method for manufacturing a liquid crystal device according to the first embodiment of the present invention.

FIG. 3 is a schematic cross-sectional view showing steps of a method for manufacturing the liquid crystal device according to the first embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view showing steps of a method for manufacturing the liquid crystal device according to the first embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view showing steps of a method for manufacturing the liquid crystal device according to the first embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view showing steps of a method for manufacturing the liquid crystal device according to the first embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view showing steps of a method for manufacturing a liquid crystal device according to a second embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view illustrating steps of a method for manufacturing a liquid crystal device according to a second embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view showing steps of a method for manufacturing a liquid crystal device according to a second embodiment of the present invention.

FIG. 10 is a schematic cross-sectional view illustrating a process of a method for manufacturing a liquid crystal device according to a second embodiment of the present invention.

FIG. 11 is a schematic cross-sectional view showing steps of a method for manufacturing a liquid crystal device according to a second embodiment of the present invention.

FIG. 12 is a schematic cross-sectional view showing steps of a method for manufacturing a liquid crystal device according to a second embodiment of the present invention.

FIG. 13 is a schematic cross-sectional view showing steps of a method for manufacturing a liquid crystal device according to a third embodiment of the present invention.

FIG. 14 is a schematic cross-sectional view illustrating steps of a method for manufacturing a liquid crystal device according to a third embodiment of the present invention.

FIG. 15 is a schematic cross-sectional view illustrating steps of a method for manufacturing a liquid crystal device according to a third embodiment of the present invention.

FIG. 16 is a schematic sectional view showing a liquid crystal device according to a third embodiment of the present invention.

FIG. 17 is an equivalent circuit diagram of various elements, wiring, and the like constituting a pixel portion in an electro-optical device according to a fourth embodiment of the invention.

FIG. 18 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate in an electro-optical device according to a fourth embodiment of the invention.

19 is a sectional view taken along line A-A 'of FIG.

FIG. 20 is a process chart illustrating a method for manufacturing an electro-optical device substrate according to a fourth embodiment of the invention.

FIG. 21 is a process chart illustrating a method for manufacturing an electro-optical device substrate according to a fourth embodiment of the invention.

FIG. 22 is a process chart showing a method for manufacturing an electro-optical device substrate according to a fourth embodiment of the present invention.

FIG. 23 is a process chart illustrating a method for manufacturing an electro-optical device substrate according to a fourth embodiment of the invention.

FIG. 24 is a process chart illustrating a method for manufacturing an electro-optical device substrate according to a fourth embodiment of the invention.

FIG. 25 is a process chart showing the method for manufacturing the electro-optical device substrate according to the fourth embodiment of the invention.

FIG. 26 is a plan view of a TFT array substrate of an electro-optical device according to a fourth embodiment of the present invention, together with components formed thereon, viewed from a counter substrate side.

FIG. 27 is a sectional view taken along line H-H ′ of FIG. 26;

FIG. 28 is a configuration diagram of a projection display device as an example of an electronic apparatus using the electro-optical device according to the embodiment of the invention.

FIG. 29 is a configuration diagram of a portable electronic device as an example of an electronic device using the electro-optical device according to the embodiment of the invention.

FIG. 30 is a flowchart showing a method for manufacturing a liquid crystal device according to the present invention.

FIG. 31 is a schematic sectional view showing a conventional liquid crystal device.

FIG. 32 is a process chart for describing a conventional problem.

[Explanation of symbols]

 g1: Forming substrate g11: Separation layer forming surface g12: Irradiation light incident surface g2: Separation layer g2a, g2b: Interface g3: Intermediate layer g4: Object to be peeled g5: Adhesive layer (adhesive sheet) g6: Transfer body (substrate) g6 ': transfer body g8: adhesive layer (adhesive sheet) g9: substrate (plastic substrate)

Continued on the front page F-term (reference) 2H088 HA01 HA08 HA12 HA13 HA14 HA16 HA18 HA21 HA24 JA13 MA20 2H090 HB08Y JB02 JB03 JD11 KA05 KA08 LA01 LA02 LA05 LA06 LA09 2H091 FA02Y FA05X FA08X FA08Z FA11X FA11GA01 GA26 LA30 5G435 AA17 BB12 BB16 CC12 KK05 KK09 KK10 LL07

Claims (15)

[Claims] 1. A method for manufacturing a liquid crystal device in which a liquid crystal layer is sandwiched between substrates in which at least one of a pair of substrates is made of a resin, comprising: a step of forming a separation layer on a formation substrate; A step of forming an object to be peeled having at least a conductive film and an alignment film thereon; and forming the substrate for formation into a gas atmosphere for selectively decomposing the separation layer, decomposing the separation layer and removing the object to be peeled. A method for manufacturing a liquid crystal device, comprising: a step of detaching from a formation substrate; and a step of attaching the object to be separated to the substrate. 2. The method according to claim 1, wherein the gas is a halogen-based gas. 3. The method according to claim 2, wherein the gas is a fluorine-based gas. 4. The liquid crystal device according to claim 1, wherein the gas is any one of argon fluoride, xenon fluoride, krypton fluoride, xenon chloride, and fluorine. Method. 5. The method for manufacturing a liquid crystal device according to claim 1, wherein the separation layer is made of any one of amorphous silicon, single crystal silicon, and polycrystalline silicon. . 6. The method for manufacturing a liquid crystal device according to claim 1, wherein the substrate is attached with an adhesive sheet. 7. The method according to claim 1, wherein the conductive film is made of indium tin oxide, and a sheet resistance thereof is set to less than 30 Ω / □. 8. The method according to claim 7, wherein the sheet resistance is set to 15Ω / □ or less. 9. The method for manufacturing a liquid crystal device according to claim 1, wherein a color filter layer is formed on the object to be peeled. 10. The method according to claim 1, wherein a reflection film is formed on the object to be peeled. 11. The method for manufacturing a liquid crystal device according to claim 1, wherein a passivation film is laminated on a side of the object to be peeled on which the substrate is attached. 12. The method according to claim 13, wherein the passivation film is made of silicon oxide. 13. The method for manufacturing a liquid crystal device according to claim 1, wherein the object to be peeled is laminated on the formation substrate at least in the order of the conductive film and the alignment film. . 14. The method for manufacturing a liquid crystal device according to claim 1, wherein the object to be peeled is laminated on the formation substrate in the order of at least the alignment film and the conductive film. . 15. The method for manufacturing a liquid crystal device according to claim 14, wherein the formation substrate is set in the gas atmosphere in a state where the substrate is attached to the object to be separated.