JP2001503554A

JP2001503554A - Plasma generating method and plasma generating apparatus including inductively coupled plasma generating source

Info

Publication number: JP2001503554A
Application number: JP53439897A
Authority: JP
Inventors: アシュティアニ，カイハン
Original assignee: マティリアルズリサーチコーポレイション
Priority date: 1996-03-27
Filing date: 1997-03-04
Publication date: 2001-03-13
Anticipated expiration: 2017-03-04
Also published as: JP3653524B2; GB2326974A; DE19781667T1; DE19781667B4; CH696036A5; AU2058397A; GB2326974B; TW340295B; GB9820829D0; US5669975A; WO1997036022A1

Abstract

(57)【要約】少なくとも物品６２の表面を一様なプラズマで処理する装置６０は、内部に物品６２が配置される処理室６１と、プラズマ発生源とを含む。このプラズマ発生源は、処理室６１の内壁面の一部を形成する第１面を有する誘電プレート７６と、電気エネルギー源とを含んで成り、電気エネルギー源は無線周波数電源４４および実質的に平坦な誘導コイル３０とを含んで成り、誘導コイル３０は誘電プレート７６の第２面上に配置され、それに対して無線周波数電源４４からのエネルギーがインピーダンス整合回路４２を経て供給されるのが好ましい。実質的に平坦な誘導コイルは少なくとも２つの螺旋部分３６，３８を有しており、これらの部分は実質的に平坦な横の少なくとも１点のまわりで対称的とされており、連続した「Ｓ字形」を形成するのが好ましい。誘導コイル３０の形状はその誘導コイル３０とプラズマとの間の容量結合を最小化し、このようにしてプラズマシース電圧降下を最小化して、これにより装置を損傷する処理を改善し、また物品表面でのプラズマの一様性を向上させる。実質的に平坦な誘導コイルと無線周波数電源４４との間に接続されたインピーダンス整合回路は先行技術の誘導コイルのリードを横断してしばしば生じている正味電圧降下を最小化し、このようにして物品表面でのプラズマの一様性をさらに向上させる。 (57) Abstract An apparatus 60 for treating at least the surface of an article 62 with uniform plasma includes a processing chamber 61 in which the article 62 is disposed, and a plasma generation source. The plasma source comprises a dielectric plate 76 having a first surface forming part of the inner wall surface of the processing chamber 61, and an electrical energy source, wherein the electrical energy source is a radio frequency power source 44 and a substantially flat surface. Preferably, the induction coil 30 is disposed on the second surface of the dielectric plate 76, to which energy from the radio frequency power supply 44 is supplied via the impedance matching circuit 42. The substantially flat induction coil has at least two helical portions 36, 38 which are symmetrical about at least one substantially flat lateral point and which are continuous "S". It is preferred to form a "figure". The shape of the induction coil 30 minimizes the capacitive coupling between the induction coil 30 and the plasma, thus minimizing the plasma sheath voltage drop, thereby improving the process of damaging the device and also improving the surface of the article. Plasma uniformity is improved. An impedance matching circuit connected between the substantially flat induction coil and the radio frequency power supply 44 minimizes the net voltage drop that often occurs across the leads of prior art induction coils, and thus reduces the The plasma uniformity at the surface is further improved.

Description

【発明の詳細な説明】プラズマ発生方法、および誘導結合されたプラズマ発生源を含むプラズマ発生装置発明の背景１．発明の分野本発明はマイクロエレクトロニクス（超小型電子技術）による製造法のような材料処理法に関する。さらに詳しくは、本発明は高密度プラズマで物品を処理するために独特の誘導コイルを含んで成る方法および装置に関する。２．一般的背景半導体の製造処理にガスプラズマを使用することは周知である。一般に処理されるウェーハは、ウェーハと平行に配向される２つの反対電極を有する室内に置かれる。その後この室は予め定めた真空レベルとなるまで真空排気され、そしてアルゴンのような低圧供給ガスが室内に導入される。供給ガスが室内に導入されたならば、典型的には無線周波数（ＲＦ）範囲の電界が２つの電極間に加えられる。この無線周波数の電界は電極間に電子流を誘起し、陰極から放出された高エネルギー電子（energetic electrons）が中性ガスの原子または分子と衝突して中性ガスをイオン化して、陰極の近くにガスプラズマ（すなわちグロー放電）を形成する。このガスプラズマのイオンはその後にエッチング、蒸着(deposition) 、またはそれらの処理法と同様な方法によるウェーハ処理に使用される。高密度プラズマ発生源は材料処理、特にイオン注入(ion implantation)、エッチングおよび蒸着のようなマイクロエレクトロニクス製造法にますます多くの応用例が見出されている。それらの発生源には、電子サイクロトロン共鳴(ＥＣＲ) 、ヘリコン波、および誘導結合（ＩＣＰ）または変成器結合（ＴＣＰ）されたプラズマ発生源がある。これらの発生源は、２００ｍｍまでの直径を有する現在の超大規模集積回路（ＶＬＳＩ）および３００ｍｍ程度の直径を有する将来の極超大規模集積回路（ＵＬＳＩ）の製造において望まれ得る高速処理を得るために、低圧（しばしば２．７×１０^-5ｋｇ／ｃｍ²（２×１０^-2Ｔｏｒｒ）未満）で高密度プラズマを発生させることができる。ほとんど全ての材料処理の応用例において、また特に集積回路を形成するような半導体基材すなわちウェーハのエッチングおよび蒸着において、例えばウェーハ面積部分においてエッチングおよび蒸着処理が一様に行われることを保証するためには、処理すべき基材の表面に沿ってプラズマが一様であることが非常に重要となる。さらに、ウェーハ面積部分に沿ってプラズマ処理が一様に行われるのを保証することは、ウェーハ上の細線による幾何学形状の限界寸法を制御するうえで重要である。最近、比較的一様なプラズマを発生させることができる誘導結合（ＩＣＰ）( および変成器結合(ＴＣＰ))によるプラズマ発生源が紹介されている。このような誘導結合（ＩＣＰ）(および変成器結合(ＴＣＰ))によるプラズマ発生源の或るものは、図１に見られるように螺旋アンテナすなわち誘導コイルの幾何学形状を基本としている。先行技術の誘導結合（ＩＣＰ）回路においては、作動周波数１３．５６ＭＨｚの電力を選択的に供給する接地された無線周波数（ＲＦ）電源１０は、インピーダンス整合回路１４を経て誘導コイル２０のリード１２に電力を供給しており、リード１６は接地（図２）されている。誘導コイル２０は自己の周囲に、供給された無線周波数（ＲＦ）エネルギーの周波数で時間的に変動する磁界を発生する。この時間的に変動する磁界は、周知のマックスウェルの方程式の１つ、ΔｘＥ＝−∂Ｂ／∂ｔ、によってプラズマ室（図示せず）内に電界を誘起する。したがって回路がこの時間的に変動する磁界の作用を受けるとその回路に電流が誘起されるのであり、図１の誘導コイル２０の場合には発生した電流は特定瞬時に図２に示された方向へ流される。(当業者には認識されるように、従来から流れ出すことを示している。したがって図１に関しては、誘導結合（ＩＣＰ）された誘導コイルを流れる発生電流は、経路ＢＣＤに沿って流れる）。しかしながら、無線周波数（ＲＦ）電源１０が誘導コイル２０に接続されるという方法のために、誘導コイル２０の平面に沿ってリード１２からリード１６までの間で正味電圧降下が生じることも認識されよう。このような正味電圧降下は誘導コイル２０を通る非対称な電流供給によって生じる。さらに詳しくは、電流が一方のリードから他方のリードへ誘導コイル２０を経て流されるとき、プラズマと誘導コイル２０との間が誘導結合であるために、幾分かの電力は周囲のプラズマへ向けて失われる。リード１２とリード１６との間における電力のこの差は、図２に示された方向におけるリード間の電圧に対応した差を生じることになる。このような電圧は、プラズマの一様性に、それ故にプラズマ処理に、望ましくない劣化を生じることになる。図１および図２の先行技術のコイルによって生じる他の問題は、プラズマとコイルとの間に生じる容量結合である。この容量結合はさらに、プラズマシース電圧（すなわち、陰極表面とその陰極付近のグロー放電（すなわちプラズマ）との間の領域であるプラズマシースを横断しての電圧降下）に望ましくない上昇を生じる。プラズマシース電圧の上昇はさらにイオンを基材に衝突させるエネルギー量を増大し、これはしばしば処理時に損傷する装置数を増大させることになる。容量結合の影響を最小限とするために、ファラデーシールドが先行技術のコイルを有する装置にしばしば使用されている。このようなシールドは、装置の或る方向の電界したがって電圧を幾分か減少してそのような容量結合を最小化させるために、一般に誘導コイル２０の直ぐ下側に配置される。しかしながらファラデーシールドは費用および複雑さを処理装置全体に加えるので、経済面および全体的な製造上の展望の面から望ましくない。このようにして、大きな表面積を有する材料、特に大きな表面積を有する半導体基材に沿って低圧で一様な高密度プラズマを形成することのできる効率的で低費用のプラズマ発生源を提供することが望ましい。発明の概要したがって本発明の１つの目的は、材料処理装置において、半導体ウェーハのような大きな表面積を有する材料に沿って一様性が向上された高密度プラズマを形成することである。本発明の他の目的は、材料処理装置において、半導体ウェーハのような材料の表面におけるプラズマ処理の一様性を向上させることである。本発明のさらに他の目的は、半導体ウェーハの表面におけるプラズマ処理の一様性を向上させる独特な誘導コイルを材料処理装置に備えることである。本発明のさらに他の目的は、半導体ウェーハや他の材料の処理時に発生し得る損傷装置の発生数を減少させるために、プラズマと誘導コイルとの間の容量結合を最小化させる独特な誘導コイルを材料処理装置に備えることである。本発明のさらに他の目的は、プラズマと誘導コイルのとの間の容量結合を最小化させ、これにより材料処理装置の費用および複雑さを減少させる独特の誘導コイルを材料処理装置に備えることである。本発明のさらに他の目的は、材料処理装置における先行技術の誘導コイルの平面内で生じる正味電圧降下を解消し、それ故に半導体ウェーハのような処理される材料の表面におけるプラズマ処理の一様性を向上させるために、独特な誘導コイルおよびおよびそれに接続されたインピーダンス整合回路を材料処理装置に備えることである。それ故に、本発明の１つの概念によれば、処理室内に置かれた物品の少なくとも表面を処理するようなプラズマをその処理室内に発生させるためのプラズマ発生源が提供される。このプラズマ発生源は、第１面が処理室の内壁面の一部を形成する誘電プレートを含み、またこの誘電プレートを経て処理室内部にエネルギーを与えるために、処理室外部に配置された電気エネルギー源をさらに含む。好ましい実施例において、電気エネルギー源は無線周波数電源と実質的に平坦な誘導コイルとを含んで成り、誘導コイルは実質的に平坦なその誘導コイルの少なくとも一点のまわりに対称的な少なくとも２つの螺旋部分を有している。実質的に平坦な誘導コイルは誘電プレートの第２面上に配置され、これにより物品の表面の直ぐ近くに高密度プラズマを形成し、その表面に衝突して物品表面に沿って実質的に一様な処理速度を生じるようにさせる。本発明の他の概念によれば、実質的に平坦な誘導コイルを含んで成るプラズマ発生源は、処理ガスから形成されたプラズマによって少なくとも物品の表面を処理する装置に使用される。このような装置はスパッターエッチング装置とされることができ、この装置は処理室を含んで成り、処理室は処理空間を画成すると共に、プラズマによって物品を処理するために処理ガスを処理空間内へ導入するための少なくとも１つの入口ポートを有している。本発明のプラズマ発生源は処理室の一端に連結されて処理室を密閉し、物品の表面の直ぐ近くにプラズマの形成を誘起させ、これによりその表面に衝突して物品表面に沿って実質的に一様な処理速度を生じさせることを含む。本発明のさらに他の概念によれば、インピーダンス整合回路は本発明のプラズマ発生源と無線周波数電源との間に接続され、誘導コイルとこの無線周波数電源との間に最大源の電力伝達を与えるようになされる。好ましい実施例において、本発明の誘導コイルはインピーダンス整合回路に接続された第１および第２リードを有しており、さらにまたこのインピーダンス整合回路を経て、誘導コイルの２つの部分が１点のまわりで対称的となるようなその１点において接地されている。これが、これまでの平坦な誘導コイルの平面を横断して生じる正味電圧降下を減少し、これによりプラズマならびにプラズマ処理の一様性を向上させる。新規であると考えられる本発明の特徴は、添付された請求の範囲の欄に詳細に記載されている。しかしながら本発明そのものは、添付図面に関連した以下の説明を参照することで最もよく理解される。図面の簡単な説明図１は先行技術の誘導結合されたプラズマ発生源（ＩＣＰ）の誘導コイルを示す。図２は図１ａの線ＡＡ’に沿う誘導コイルの横断面概略図を示し、この図はまた変動磁界を形成するためにこのコイルに無線周波数（ＲＦ）電源を接続する従来方法、コイルを通る電流の流れ方向、および無線周波数（ＲＦ）電源がコイルに接続される方法により生じる正味電圧降下の方向を破線で示す。図３は本発明の誘導結合されたプラズマ発生源（ＩＣＰ）の１つの実施例を示す。図４ａは図３の線ＡＡ’に沿う誘導コイルの横断面概略図を示し、この図はまた本発明の１つの実施例によるインピーダンス整合回路を経て誘導コイルに無線周波数（ＲＦ）電源を接続する概略図も示す。図４ｂは図３の線ＡＡ’に沿う誘導コイルの横断面概略図を示し、この図はまた本発明の他の実施例による誘導コイルに無線周波数（ＲＦ）電源を接続する概略図も示す。図５は図３の誘導結合（ＩＣＰ）された誘導コイルを使用するスパッターエッチング装置の概略図を示す。図６ａは図５のスパッター装置の周囲に配置され、プラズマの一様性をさらに向上させるのに使用された複磁極構造の概略図を示す。図６ｂは複磁極構造の磁力線に沿うプラズマ電子の移動路の概略図を示している図６ａの複磁極の拡大部分９６の頂平面図である。発明の詳細な説明図３を参照して見られるように、本発明の誘導コイル３０は第１リード３２および第２リード３４を有するコイルである。さらに詳しくは、誘導コイル３０は第１部分３６および第２部分３８を有する連続「Ｓ字形」コイルとして想定することができ、この各部分は螺旋形すなわちインボリュート形に巻かれている。部分３６，３８は実質的に同じとされ、誘導コイル３０の少なくとも中央点４０のまわりに対称的であるのが好ましい。(図３では、部分３６，３８の各々は３つの周回部分を有しているのが見られるが、誘導コイル３０における周回数は前述した説明のパラメータ内で変更することができることは認識されよう)。誘導コイル３０は中空の銅製チューブで作られ、その内部を通して水が流されるのが好ましく、この水は誘導コイル３０を冷却し、これと同時に無線周波数の電力がそれを通して伝達される。図４ａおよび図４ｂに見られるように、図３の誘導コイル３０は無線周波数( ＲＦ)エネルギー電源４４に接続され、そこからエネルギーを受取るようにできる。図４ａに示される実施例において、リード３４は接地される一方、リード３２はインピーダンス整合回路４２を経て無線周波数（ＲＦ）エネルギー電源４４に接続されており、インピーダンス整合回路４２は無線周波数（ＲＦ）エネルギー電源４４と誘導コイル３０との間で最大限の電力伝達を可能にするように設計されている。インピーダンス整合回路４２は通常のＬ形またはΠ形の回路のいずれかとされるが、回路のＱ係数が大きいこと、調波の抑制が良好なこと、したがって誘導コイル３０からプラズマに電力が効率的に伝達されることに照らしてＬ形回路が好ましい。それ故に図４ａに示す実施例では、発生した電流は誘導コイル３０を通ってリード３２からリード３４へと経路ＥＦＧＨＩに沿って流れる。図３の誘導コイルは図４ａに見られるように無線周波数（ＲＦ）エネルギー電源４４に接続できるが、この電源に対しては図４ｂに示されるように接続されるのが好ましい。この実施例では、リード３２はインピーダンス整合回路４２の第１端子に接続される一方、リード３４はインピーダンス整合回路４２の第２端子に接続されている。再び述べるが、インピーダンス整合回路はＬ形またはΠ形の回路のいずれかとされるが、Ｌ形回路の方が好ましい。非対称の供給が望まれるならば、インピーダンス整合回路４２の最終段階は中央接地の、すなわち誘導コイル３０の点４０が接地（図５点線で示されている）された変成器とされ得る。 (これに代えて変成器は無線周波数（ＲＦ）電源４４に接続された中央タップを有することができ、リード３２，３４は接地される)。この回路構成により、第１電流はリード３２からインピーダンス整合回路４２へ向かって移動路ＥＦＧに沿って誘導コイル３０を流れる。さらに、第２電流はリード３４からインピーダンス整合回路４２へ向かって移動路ＩＨＧに沿って流れる(図４ｂ)。電流は提供された誘導コイル３０の２つの反対方向に巻かれた部分３６，３８の各々を通って反対方向へ向かって流れるので(図４ｂ)、これにより発生される電界は互いに打ち消し合い、コイルとプラズマとの間の容量結合を最小化させることが認識されよう。それ故に、最小化された容量結合によってプラズマシース電圧降下が減少され、したがって処理時に発生し得る損傷装置の数が減少される。さらに、最小化された容量結合は、図１の先行技術の誘導コイル２０に関連して使用されるようなファラデーシースの必要性をなくす。ファラデーシースの削除は誘導コイルおよび付属回路の費用および複雑さを減少させる。さらに、本発明の誘導コイル３０が実質的に平坦とされる設計に照らして、このような誘導コイル３０は、マイクロエレクトロニクス工業界で３００ｍｍウェーハを処理する応用例のように、大面積を処理するように容易に尺度を定めることができる。さらに、図４ｂの整合ネットワークすなわちインピーダンス整合回路４２を経て誘導コイル３０に電流を対称的に供給する理由で、図１の先行技術の誘導コイル２０の平面に沿って通常は生じる正味電圧降下が排除される。これにより非容量性のプラズマ、したがって低いプラズマシース電圧が形成される。先に説明したように、低いプラズマシース電圧は基材に対してイオンを衝突させるエネルギー量を減少し、したがって処理時に発生する損傷装置の数を改善する。本発明の誘導コイル３０の適用は、図５のスパッターエッチング装置における使用を参照して説明される。誘導コイル３０の適用例の説明はスパッターエッチング装置６０に関して与えられるが、誘導コイル３０の使用はこれに限定されず、イオン注入やプラズマ蒸着のような先行技術で周知の他の材料処理の適用例において使用できることが理解されよう。スパッターエッチング処理は、帯電ガスプラズマのイオン化粒子を使用して基材すなわちウェーハの表面に衝突させ、これにより基材から粒子を放出すなわち「スパッター(飛散)」させることは周知である。さらに詳しくは、スパッターエッチング処理時に基材すなわちウェーハ６２は装置６０のスパッターエッチング室６１の一端で支持台６４上に置かれ、また静電チャックすなわちウェーハクランプ６６を使用して所定位置に保持されるのが好ましい。その後、例えば周波数１３．５６ＭＨｚの無線周波数電力が供給源７０から付与されることで、支持基部６４上に置かれたウェーハ台６８を横断してバイアス電圧が印加される。絶縁キャパシタ７２が無線周波数供給源７０とウェーハ台６８との間に接続され、無線周波数供給源７０から無線周波数信号のＤＣ成分を遮断するようになされる。円筒形の石英スリーブ７４がスパッターエッチング室６１の内径面の内側に挿入されて、ウェーハ６２から放出された材料から室壁面を保護するようになされる。この石英スリーブ７４は定期的な間隔の保守において清浄とされ、または交換される。誘電プレート７６および本発明の誘導コイル３０（図３）を含んで成るプラズマ発生源はスパッターエッチング室６１の他端または頂端に配置される。ウェーハ台６８から７〜２０ｃｍの距離に配置されるのが好ましい誘電プレート７６はスパッターエッチング室６１の金属製室壁面７８に結合され、気密な真空シールを形成する。図５から分かるように、誘導コイル３０は誘電プレート７６上に直接に係止され、それらの両方とも実質的に平坦であるのが好ましい。しかしながら誘電プレート７６はスパッターエッチング室６１の内部へ向かって突出する一般に凸状の内面と、一般に凹状の外面とを有し、その誘導コイル３０の形状は本発明の出願人に譲渡されている「誘導ポケットおよび形成されたプラズマ発生源とを有するスパッターエッチング装置」と題するガンバリ氏に付与された米国特許出願第０８／４１０３６２号明細書に一層詳細に説明されている。作動に置いて、スパッターエッチング室６１は分子ポンプすなわち低温ポンプ（図示せず）によって例えば１．３６×１０^-10ｋｇ／ｃｍ²（１×１０^-7Ｔｏｒｒ）の基本真空レベルまでポンプ排気され、そしてプラズマガス、好ましくはスパッターエッチングの適用例においてはアルゴンガスが、典型的に１０〜１００ｓｃｃｍの流量にてパッターエッチング室６１の頂部付近のガス供給入口ポート８０を通して導入されて、典型的に１．３６×１０^-6〜５４．４×１０^-6ｋｇ／ｃｍ²（１×１０^-3〜４０×１０^-3Ｔｏｒｒ）の作動圧力を形成するようになされる。この作動圧力は、スパッターエッチング室６１における供給ガスの滞留時間を制御するゲートバルブ機構（図示せず）によって制御される。安定作動圧力が得られたならば、無線周波数電源４４からの電力がインピーダンス整合回路４２(図４ｂのインピーダンス整合回路４２であるのが好ましいが、図４ａのインピーダンス整合回路とされることができる)を経て誘導コイル３０に付与される。無線周波数電源４４は作動周波数が２〜１３．５６ＭＨｚのそのような電力を供給する。上述で説明したように、誘導コイル３０を経た無線周波数エネルギーは誘導コイル３０の直ぐ近くに時間的に変動する磁界を形成し、この磁界は方程式ΔｘＥ＝−∂Ｂ／∂ｔに従ってスパッターエッチング室６１の内部に電界Ｅを誘起させる。この誘起された電界Ｅは、周囲に存在する宇宙線および他の電磁発生源によって中性ガスがイオン化される結果として、スパッターエッチング室６１の内部に滞留している少数の電子を加速する。加速された電子はガスの中性分子に衝突して、イオンおよび更なる電子を発生させる。この処理は継続し、電子およびイオンの電子なだれを形成する。このようにして誘電プレート７６の下側の誘導コイル３０の面積部分においてスパッターエッチング室６１の内部にプラズマを形成する。その後プラズマは拡散し、スパッターエッチング室６１を充満する。ウェーハ台６８へ向かってプラズマが拡散すると、プラズマ中の、およびウェーハ台６８の近くのガスイオン（例えばアルゴンイオン）は、それに容量結合された他の無線周波数（ＲＦ）供給源７０によってウェーハ台６８に発生されたバイアスにより加速される。加速されたアルゴンイオンはウェーハに衝突し、ウェーハ６２から材料の幾分かを放出すなわち「スパッター(飛散)」させる。エッチングによる副産物は真空ポンプ（図示せず）によってスパッターエッチング室６１からポンプ排出される。スパッターエッチング装置６０は、プラズマの一様性を向上させるために、図６ａの点線で説明したように周囲に配置された複磁極構造９０を有することができる。図６ａに見られるように、複磁極構造９０はスパッターエッチング装置６０を取囲んでおり、垂直方向に整列された交互の磁極とされる細長い領域９２，９４を有するのが好ましい。スパッターエッチング装置６０の頂部からウェーハ台６８へ向かって見下ろしたときの部分９６の拡大図が図６ｂに示されている。この複磁極構造９０によって形成された磁界、すなわちマグネチック・カスプは、図６ｂに示されるように磁力線１００に対する電子移動路１０２を制限しており、周知の「磁気ミラー」と同じ概念および原理のもとで作用する。この結果、スパッターエッチング室６１における電子の滞留時間は増大され、内側の室を取囲む石英スリーブ７４に対する電子の損失速度は減少される。電子損失速度の減少は、プラズマ密度が最も希薄となる傾向を示す誘導コイル３０の境界面近くのプラズマ密度を増大させる。誘導コイル３０の境界面でのプラズマ密度を増大させることにより、プラズマの一様性およびこの処理の一様性は向上される。それ故に本発明によれば、目的、意図および利点を完全に満たす実施例が上述されたことは明白である。本発明は特定の実施例に関連して説明されたが、前述の説明に照らして当業者に多くの代替例、変更例、交換例および変形例が明白となることは明らかである。例えば、本発明の誘導コイルの適用例の説明はスパッターエッチング装置に関して与えられたが、本発明の誘導コイルの使用はこれに限定されず、例えばイオン注入やプラズマ蒸着のようなこの分野で周知の他の材料処理の適用例に使用できる。さらに、本発明の誘導コイルおよびそれを支持する誘電プレートは実質的に平坦であるのが好ましく、誘電プレートはスパッターエッチング室内に延在される一般に凸状の内面と、一般に凹状の外面とを有し、その形状に本発明の誘導コイルは追従する。他の実施例が当業者によって実現され得る。したがって、本発明は添付の請求の範囲に含まれるそのような全ての代替例、変更例および変形例を包含することが意図される。Detailed Description of the Invention Plasma Generation Method and Plasma Generation Apparatus Including Inductively Coupled Plasma Source FIELD OF THE INVENTION The present invention relates to material processing methods such as microelectronics (microelectronics) manufacturing methods. More particularly, the present invention relates to a method and apparatus comprising a unique induction coil for treating an article with a high density plasma. 2. General Background The use of gas plasmas in semiconductor manufacturing processes is well known. Generally, a wafer to be processed is placed in a chamber having two opposite electrodes oriented parallel to the wafer. The chamber is then evacuated to a predetermined vacuum level, and a low pressure feed gas such as argon is introduced into the chamber. Once the feed gas has been introduced into the chamber, an electric field, typically in the radio frequency (RF) range, is applied between the two electrodes. This radio-frequency electric field induces a flow of electrons between the electrodes, and high-energy electrons emitted from the cathode collide with atoms or molecules of the neutral gas to ionize the neutral gas, thereby causing the neutral gas to flow near the cathode. To form a gas plasma (ie, glow discharge). The ions of this gas plasma are then used for wafer processing by etching, deposition, or similar methods. High-density plasma sources are finding more and more applications in material processing, especially in microelectronics manufacturing processes such as ion implantation, etching and deposition. These sources include electron cyclotron resonance (ECR), helicon waves, and inductively coupled (ICP) or transformer coupled (TCP) plasma sources. These sources are needed to obtain the high speed processing that may be desired in the manufacture of current very large scale integrated circuits (VLSI) with diameters up to 200 mm and future very large scale integrated circuits (ULSI) with diameters on the order of 300 mm. A high-density plasma can be generated at a low pressure (often less than 2.7 × 10 ⁻⁵ kg / cm ² (2 × 10 ⁻² Torr)). In almost all material processing applications, and especially in the etching and deposition of semiconductor substrates or wafers to form integrated circuits, for example, to ensure that the etching and deposition processes are performed uniformly over the wafer area. It is very important that the plasma be uniform along the surface of the substrate to be treated. Furthermore, ensuring that the plasma process is uniform along the wafer area is important in controlling the critical dimension of the geometry due to fine lines on the wafer. Recently, inductively coupled (ICP) (and transformer coupled (TCP)) plasma sources have been introduced that can generate relatively uniform plasma. Certain of such inductively coupled (ICP) (and transformer coupled (TCP)) plasma sources are based on the geometry of a spiral antenna or induction coil, as seen in FIG. In a prior art inductively coupled (ICP) circuit, a grounded radio frequency (RF) power supply 10 that selectively supplies power at an operating frequency of 13.56 MHz is connected to a lead of an induction coil 20 via an impedance matching circuit 14. 12, and the lead 16 is grounded (FIG. 2). The induction coil 20 generates a magnetic field around itself that varies over time at the frequency of the supplied radio frequency (RF) energy. This time-varying magnetic field induces an electric field in a plasma chamber (not shown) according to one of the well-known Maxwell's equations, ΔxE = −∂B / ∂t. Therefore, when the circuit is affected by the time-varying magnetic field, a current is induced in the circuit. In the case of the induction coil 20 shown in FIG. 1, the generated current instantaneously changes in the direction shown in FIG. Flowed to (As will be appreciated by those skilled in the art, Indicates that it flows out of Thus, with respect to FIG. 1, the generated current flowing through the inductively coupled (ICP) induction coil flows along path BCD). However, it will also be appreciated that the manner in which the radio frequency (RF) power supply 10 is connected to the induction coil 20 causes a net voltage drop from lead 12 to lead 16 along the plane of the induction coil 20. . Such a net voltage drop is caused by an asymmetric current supply through the induction coil 20. More specifically, when current is passed through the induction coil 20 from one lead to the other, some power is directed to the surrounding plasma due to the inductive coupling between the plasma and the induction coil 20. Lost. This difference in power between leads 12 and 16 will result in a corresponding difference in voltage between the leads in the direction shown in FIG. Such voltages will cause undesirable degradation of the plasma uniformity and therefore of the plasma processing. Another problem caused by the prior art coils of FIGS. 1 and 2 is the capacitive coupling created between the plasma and the coil. This capacitive coupling also causes an undesirable increase in the plasma sheath voltage (ie, the voltage drop across the plasma sheath, the area between the cathode surface and the glow discharge (ie, plasma) near the cathode). Increasing the plasma sheath voltage further increases the amount of energy that bombards the ions with the substrate, which often increases the number of devices that are damaged during processing. Faraday shields are often used in devices with prior art coils to minimize the effects of capacitive coupling. Such a shield is generally located just below the induction coil 20 to somewhat reduce the electric field and hence voltage in one direction of the device to minimize such capacitive coupling. However, Faraday shield adds cost and complexity to the overall processing equipment, and is therefore undesirable from an economic and overall manufacturing perspective. In this manner, it is desirable to provide an efficient, low cost plasma source capable of forming a low pressure, uniform high density plasma along a high surface area material, especially a high surface area semiconductor substrate. desirable. SUMMARY OF THE INVENTION It is therefore an object of the present invention to form a high density plasma with improved uniformity in a material processing apparatus along a material having a large surface area, such as a semiconductor wafer. Another object of the present invention is to improve the uniformity of plasma processing on a surface of a material such as a semiconductor wafer in a material processing apparatus. Yet another object of the present invention is to provide a material processing apparatus with a unique induction coil that improves the uniformity of plasma processing on the surface of a semiconductor wafer. It is yet another object of the present invention to provide a unique induction coil that minimizes capacitive coupling between the plasma and the induction coil to reduce the number of damage devices that can occur during processing of semiconductor wafers and other materials. Is provided in the material processing apparatus. Yet another object of the present invention is to provide a material processing device with a unique induction coil that minimizes capacitive coupling between the plasma and the induction coil, thereby reducing the cost and complexity of the material processing device. is there. Yet another object of the present invention is to eliminate the net voltage drop that occurs in the plane of prior art induction coils in a material processing apparatus, and therefore the uniformity of plasma processing on the surface of the material being processed, such as a semiconductor wafer. To provide a material processing device with a unique induction coil and an impedance matching circuit connected to it, in order to improve the efficiency. Thus, according to one aspect of the present invention, there is provided a plasma source for generating a plasma in a processing chamber that treats at least a surface of an article placed in the processing chamber. The plasma generating source includes a dielectric plate having a first surface forming a part of an inner wall surface of the processing chamber, and an electric source disposed outside the processing chamber to apply energy to the inside of the processing chamber via the dielectric plate. Further includes an energy source. In a preferred embodiment, the electrical energy source comprises a radio frequency power supply and a substantially flat induction coil, the induction coil comprising at least two spirals symmetric about at least one point of the substantially flat induction coil. Has a part. A substantially flat induction coil is disposed on the second surface of the dielectric plate, thereby forming a high-density plasma in close proximity to the surface of the article and impinging on that surface substantially along the surface of the article. To achieve a similar processing speed. In accordance with another aspect of the invention, a plasma source comprising a substantially flat induction coil is used in an apparatus for treating at least the surface of an article with a plasma formed from a process gas. Such an apparatus can be a sputter etching apparatus, which includes a processing chamber, which defines a processing space and passes processing gas within the processing space to process articles by plasma. It has at least one inlet port for introduction into the vessel. The plasma source of the present invention is coupled to one end of the processing chamber to seal the processing chamber and induce the formation of a plasma in the immediate vicinity of the surface of the article, thereby impacting the surface and substantially along the article surface. To produce a uniform processing speed. According to yet another aspect of the invention, an impedance matching circuit is connected between the plasma source of the invention and a radio frequency power supply to provide maximum source power transfer between the induction coil and the radio frequency power supply. It is done as follows. In a preferred embodiment, the induction coil of the present invention has first and second leads connected to an impedance matching circuit, and through which the two portions of the induction coil are rotated about a point. At one point so as to be symmetrical. This reduces the net voltage drop that occurs across the plane of the previously flat induction coil, thereby improving the plasma as well as the plasma processing uniformity. The features of the invention which are believed to be novel are set forth with particularity in the appended claims. However, the invention itself is best understood by reference to the following description taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows an induction coil of a prior art inductively coupled plasma source (ICP). FIG. 2 shows a schematic cross-sectional view of an induction coil along line AA 'of FIG. 1a, which also passes through the coil, a conventional method of connecting a radio frequency (RF) power supply to the coil to form a fluctuating magnetic field Dashed lines indicate the direction of current flow and the direction of the net voltage drop caused by the way a radio frequency (RF) power supply is connected to the coil. FIG. 3 shows one embodiment of the inductively coupled plasma source (ICP) of the present invention. FIG. 4a shows a schematic cross-sectional view of the induction coil along line AA 'of FIG. 3, which also connects a radio frequency (RF) power supply to the induction coil via an impedance matching circuit according to one embodiment of the present invention. A schematic diagram is also shown. FIG. 4b shows a schematic cross-sectional view of the induction coil along line AA 'of FIG. 3, which also shows a schematic view of connecting a radio frequency (RF) power supply to the induction coil according to another embodiment of the present invention. FIG. 5 shows a schematic diagram of a sputter etching apparatus using the inductively coupled (ICP) induction coil of FIG. FIG. 6a shows a schematic diagram of a double pole structure placed around the sputter apparatus of FIG. 5 and used to further improve the plasma uniformity. FIG. 6b is a top plan view of an enlarged portion 96 of the double pole of FIG. 6a showing a schematic view of the path of plasma electrons along the field lines of the double pole structure. DETAILED DESCRIPTION OF THE INVENTION As can be seen with reference to FIG. 3, the induction coil 30 of the present invention is a coil having a first lead 32 and a second lead. More specifically, the induction coil 30 can be envisioned as a continuous "S-shaped" coil having a first portion 36 and a second portion 38, each of which is wound in a spiral or involute shape. The portions 36, 38 are preferably substantially the same and are preferably symmetric about at least the central point 40 of the induction coil 30. (In FIG. 3, it is seen that each of the portions 36, 38 has three turns, but it will be appreciated that the number of turns in the induction coil 30 can be varied within the parameters described above. ). The induction coil 30 is made of a hollow copper tube through which water is preferably flowed, which cools the induction coil 30 and at the same time transmits radio frequency power. As seen in FIGS. 4a and 4b, the induction coil 30 of FIG. 3 can be connected to and receive energy from a radio frequency (RF) energy source 44. In the embodiment shown in FIG. 4a, lead 34 is grounded, while lead 32 is connected to a radio frequency (RF) energy source 44 via impedance matching circuit 42, and impedance matching circuit 42 is connected to radio frequency (RF). ) Designed to allow maximum power transfer between the energy source 44 and the induction coil 30. The impedance matching circuit 42 is either a normal L-shaped circuit or a Π-shaped circuit. An L-shaped circuit is preferred in view of the transmission. Thus, in the embodiment shown in FIG. 4a, the generated current flows through the induction coil 30 from the lead 32 to the lead 34 along the path EFGHI. The induction coil of FIG. 3 can be connected to a radio frequency (RF) energy power supply 44 as seen in FIG. 4a, but is preferably connected to this power supply as shown in FIG. 4b. In this embodiment, lead 32 is connected to a first terminal of impedance matching circuit 42, while lead 34 is connected to a second terminal of impedance matching circuit 42. Again, the impedance matching circuit may be either an L-shaped or a Π-shaped circuit, but an L-shaped circuit is preferred. If an asymmetrical supply is desired, the final stage of the impedance matching circuit 42 may be a center grounded transformer, ie, the point 40 of the induction coil 30 is grounded (shown in dashed lines in FIG. 5). (Alternatively, the transformer can have a center tap connected to a radio frequency (RF) power supply 44, and leads 32 and 34 are grounded). With this circuit configuration, the first current flows through the induction coil 30 along the movement path EFG from the lead 32 to the impedance matching circuit 42. Further, the second current flows from the lead 34 to the impedance matching circuit 42 along the movement path IHG (FIG. 4B). As current flows in opposite directions through each of the two oppositely wound portions 36, 38 of the provided induction coil 30 (FIG. 4b), the electric fields generated thereby cancel each other out and the coil It will be appreciated that capacitive coupling between the plasma and the plasma is minimized. Hence, the minimized capacitive coupling reduces the plasma sheath voltage drop, and thus reduces the number of damaged devices that can occur during processing. Furthermore, minimized capacitive coupling eliminates the need for a Faraday sheath as used in connection with the prior art induction coil 20 of FIG. Elimination of the Faraday sheath reduces the cost and complexity of the induction coil and associated circuitry. In addition, in light of the design of the present invention where the induction coil 30 is substantially flat, such an induction coil 30 processes large areas, such as the 300 mm wafer processing application in the microelectronics industry. Scale can be easily determined. Furthermore, the net voltage drop that normally occurs along the plane of the prior art induction coil 20 of FIG. 1 is eliminated because of the symmetrical supply of current to the induction coil 30 via the matching network or impedance matching circuit 42 of FIG. 4b. Is done. This creates a non-capacitive plasma and thus a low plasma sheath voltage. As explained above, a low plasma sheath voltage reduces the amount of energy that bombards the ions with the substrate, thus improving the number of damage devices that occur during processing. The application of the induction coil 30 of the present invention is described with reference to its use in the sputter etching apparatus of FIG. Although a description of the application of the induction coil 30 is given with respect to the sputter etcher 60, the use of the induction coil 30 is not limited to this, and other material processing applications well known in the prior art, such as ion implantation and plasma deposition. It will be appreciated that it can be used in It is well known that sputter etching uses ionized particles of a charged gas plasma to impinge on the surface of a substrate or wafer, thereby releasing or "sputtering" the particles from the substrate. More specifically, during the sputter etching process, the substrate or wafer 62 is placed on a support 64 at one end of the sputter etching chamber 61 of the apparatus 60 and held in place using an electrostatic chuck or wafer clamp 66. Is preferred. Thereafter, for example, a radio frequency power having a frequency of 13.56 MHz is applied from the supply source 70 to apply a bias voltage across the wafer table 68 placed on the support base 64. An insulating capacitor 72 is connected between the radio frequency source 70 and the wafer stage 68 to cut off the DC component of the radio frequency signal from the radio frequency source 70. A cylindrical quartz sleeve 74 is inserted inside the inner diameter surface of the sputter etching chamber 61 to protect the chamber wall from the material released from the wafer 62. This quartz sleeve 74 is cleaned or replaced at regular interval maintenance. A plasma source comprising the dielectric plate 76 and the induction coil 30 of the present invention (FIG. 3) is located at the other end or top of the sputter etch chamber 61. A dielectric plate 76, preferably located at a distance of 7 to 20 cm from the wafer stage 68, is bonded to the metal chamber wall 78 of the sputter etch chamber 61 to form a hermetic vacuum seal. As can be seen from FIG. 5, the induction coil 30 is locked directly on the dielectric plate 76, both of which are preferably substantially flat. However, the dielectric plate 76 has a generally convex inner surface protruding into the sputter etch chamber 61 and a generally concave outer surface, and the shape of the induction coil 30 is assigned to the assignee of the present invention. A more detailed description is found in U.S. patent application Ser. No. 08 / 410,362, issued to Gambari, entitled "Sputter Etching Apparatus with Induction Pocket and Formed Plasma Source." In operation, the sputter etch chamber 61 is pumped down to a basic vacuum level of, for example, 1.36 × 10 ⁻¹⁰ kg / cm ² (1 × 10 ⁻⁷ Torr) by a molecular or low temperature pump (not shown). And a plasma gas, preferably argon gas in sputter etching applications, is introduced through a gas supply inlet port 80 near the top of the putter etch chamber 61, typically at a flow rate of 10-100 sccm. And an operating pressure of 1.36 × 10 ^{−6 to} 54.4 × 10 ⁻⁶ kg / cm ² (1 × 10 ⁻³ to 40 × 10 ⁻³ Torr). This operating pressure is controlled by a gate valve mechanism (not shown) for controlling the residence time of the supply gas in the sputter etching chamber 61. Once a stable operating pressure has been obtained, the power from the radio frequency power supply 44 is supplied to the impedance matching circuit 42 (preferably the impedance matching circuit 42 of FIG. 4b, but can be the impedance matching circuit of FIG. , And is applied to the induction coil 30. Radio frequency power supply 44 provides such power with an operating frequency of 2 to 13.56 MHz. As explained above, the radio frequency energy passing through the induction coil 30 forms a time-varying magnetic field in the immediate vicinity of the induction coil 30, which magnetic field is generated according to the equation ΔxE = -∂B / ∂t. An electric field E is induced inside the device. The induced electric field E accelerates a small number of electrons staying inside the sputter etching chamber 61 as a result of ionizing the neutral gas by cosmic rays and other electromagnetic sources existing around. The accelerated electrons collide with the neutral molecules of the gas, generating ions and additional electrons. This process continues and forms an avalanche of electrons and ions. In this way, plasma is formed inside the sputter etching chamber 61 in the area of the induction coil 30 below the dielectric plate 76. Thereafter, the plasma diffuses and fills the sputter etching chamber 61. As the plasma diffuses toward the wafer stage 68, gas ions (eg, argon ions) in the plasma and near the wafer stage 68 are exposed to the wafer stage 68 by another radio frequency (RF) source 70 capacitively coupled thereto. Is accelerated by the generated bias. The accelerated argon ions bombard the wafer, releasing or "sputtering" some of the material from the wafer 62. By-products of the etching are pumped out of the sputter etching chamber 61 by a vacuum pump (not shown). The sputter etching apparatus 60 may have a double pole structure 90 arranged around as described by the dotted line in FIG. 6a to improve the uniformity of the plasma. As can be seen in FIG. 6a, the double pole structure 90 surrounds the sputter etch apparatus 60 and preferably has elongated regions 92, 94 which are vertically aligned alternating poles. An enlarged view of the portion 96 when looking down from the top of the sputter etching apparatus 60 toward the wafer stage 68 is shown in FIG. 6b. The magnetic field, or magnetic cusp, created by this double pole structure 90 restricts the electron travel path 102 for the magnetic field lines 100, as shown in FIG. 6b, and has the same concept and principles as the well-known "magnetic mirror". Acts on its own. As a result, the residence time of electrons in the sputter etching chamber 61 is increased, and the rate of electron loss to the quartz sleeve 74 surrounding the inner chamber is reduced. The reduction in electron loss rate increases the plasma density near the interface of the induction coil 30 where the plasma density tends to be the leanest. By increasing the plasma density at the interface of the induction coil 30, the uniformity of the plasma and of this process is improved. Thus, it is apparent that there has been described above in accordance with the present invention an embodiment that fully satisfies the objects, aims and advantages. Although the present invention has been described in relation to particular embodiments, it is evident that many alternatives, modifications, exchanges and variations will be apparent to those skilled in the art in light of the foregoing description. For example, while the description of the application of the induction coil of the present invention has been given with respect to a sputter etching apparatus, the use of the induction coil of the present invention is not limited to this, and is well known in the art such as ion implantation and plasma deposition. It can be used for other material processing applications. Further, the induction coil of the present invention and the dielectric plate supporting it are preferably substantially flat, the dielectric plate having a generally convex inner surface extending into the sputter etch chamber and a generally concave outer surface. Then, the induction coil of the present invention follows the shape. Other embodiments can be implemented by those skilled in the art. Accordingly, the present invention is intended to embrace all such alternatives, modifications and variances that fall within the scope of the appended claims.

───────────────────────────────────────────────────── フロントページの続き (81)指定国ＥＰ(ＡＴ，ＢＥ，ＣＨ，ＤＥ，ＤＫ，ＥＳ，ＦＩ，ＦＲ，ＧＢ，ＧＲ，ＩＥ，ＩＴ，ＬＵ，ＭＣ，ＮＬ，ＰＴ，ＳＥ)，ＯＡ(ＢＦ，ＢＪ，ＣＦ，ＣＧ，ＣＩ，ＣＭ，ＧＡ，ＧＮ，ＭＬ，ＭＲ，ＮＥ，ＳＮ，ＴＤ，ＴＧ)，ＡＰ(ＧＨ，ＫＥ，ＬＳ，ＭＷ，ＳＤ，ＳＺ，ＵＧ)，ＥＡ(ＡＭ，ＡＺ，ＢＹ，ＫＧ，ＫＺ，ＭＤ，ＲＵ，ＴＪ，ＴＭ)，ＡＬ，ＡＭ，ＡＴ，ＡＵ，ＡＺ，ＢＡ，ＢＢ，ＢＧ，ＢＲ，ＢＹ，ＣＡ，ＣＨ，ＣＮ，ＣＵ，ＣＺ，ＤＥ，ＤＫ，ＥＥ，ＥＳ，ＦＩ，ＧＢ，ＧＥ，ＧＨ，ＨＵ，ＩＬ，ＩＳ，ＪＰ，ＫＥ，ＫＧ，ＫＰ，ＫＲ，ＫＺ，ＬＣ，ＬＫ，ＬＲ，ＬＳ，ＬＴ，ＬＵ，ＬＶ，ＭＤ，ＭＧ，ＭＫ，ＭＮ，ＭＷ，ＭＸ，ＮＯ，ＮＺ，ＰＬ，ＰＴ，ＲＯ，ＲＵ，ＳＤ，ＳＥ，ＳＧ，ＳＩ，ＳＫ，ＴＪ，ＴＭ，ＴＲ，ＴＴ，ＵＡ，ＵＧ，ＵＺ，ＶＮ，ＹＵ【要約の続き】に接続されたインピーダンス整合回路は先行技術の誘導コイルのリードを横断してしばしば生じている正味電圧降下を最小化し、このようにして物品表面でのプラズマの一様性をさらに向上させる。────────────────────────────────────────────────── ─── Continuation of front page (81) Designated countries EP (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, L U, MC, NL, PT, SE), OA (BF, BJ, CF) , CG, CI, CM, GA, GN, ML, MR, NE, SN, TD, TG), AP (GH, KE, LS, MW, S D, SZ, UG), EA (AM, AZ, BY, KG, KZ , MD, RU, TJ, TM), AL, AM, AT, AU , AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, G B, GE, GH, HU, IL, IS, JP, KE, KG , KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, N O, NZ, PL, PT, RO, RU, SD, SE, SG , SI, SK, TJ, TM, TR, TT, UA, UG, UZ, VN, YU [Continuation of summary] The impedance matching circuit connected to the The net voltage often occurring across the coil leads The descent is minimized and thus the plasma on the article surface Is further improved.

Claims

[Claims] 1. Treat at least the surface of the article with plasma formed from the processing gas Device for performing To define a processing space and to process the article with the plasma. At least one inlet port for introducing the processing gas into the processing space; A processing chamber having The plasma processing chamber is connected to one end of the processing chamber to seal the processing chamber and form the plasma. A plasma source that induces A dielectric plate having a first surface forming a part of an inner wall surface of the processing chamber; And An electrical energy supply disposed outside the processing chamber, An electrical energy source passes through the dielectric plate to the processing space Energy to interact with the process gas to form the plasma. The electrical energy source comprises at least two spirals And an induction coil having at least a portion of said induction coil. Both are symmetric about one point and the induction coil is Disposed on a second side of the plate, wherein the article is in close proximity to the surface of the article. A plasma is formed and impinges on the surface, substantially along the article surface. Source of electric energy for producing a uniform processing speed And a processing device comprising: 2. 2. The processing apparatus according to claim 1, wherein the electric energy source is a first electric energy source. A processing device comprising a radio frequency power supply. 3. 3. The processing device according to claim 2, wherein the first radio frequency power supply is A processing unit that operates in the frequency range of 2 to 13.56 MHz. 4. 3. The processing device according to claim 2, wherein the induction coil has an impedance. Connected to the induction coil to match the impedance and the first radio frequency power supply. Processing device further comprising a circuit provided. 5. 5. The processing device according to claim 4, wherein the impedance matching circuit is provided. Comprises a L-shaped circuit. 6. 5. The processing device according to claim 4, wherein the induction coils are first and second. A second lead, and wherein the impedance matching circuit has the first wireless circuit. A first terminal connected to a wave number power supply and the first lead of the induction coil; A second terminal through which current flows from the first lead of the coil to the coil. A processing device adapted to flow to the second lead of the file. 7. The processing device according to claim 6, wherein the second coil of the induction coil is provided. Processing equipment with grounded ground. 8. 5. The processing device according to claim 4, wherein the induction coils are first and second. A second lead, and wherein the impedance matching circuit has the first wireless circuit. A first terminal connected to a wave number power supply, connected to the first lead of the induction coil; A second terminal, and a third terminal connected to the second lead of the induction coil. Processing equipment. 9. 9. The processing apparatus according to claim 8, wherein said induction coil is provided with said small coil. The impedance matching at the point where at least two helical parts are symmetric Grounded via a circuit, whereby a first current flows through the first A second current flowing from the lead to the impedance matching circuit; Processing that flows from the second lead of the coil to the impedance matching circuit apparatus. 10. 9. The processing device according to claim 8, wherein the impedance matching circuit is provided. A processing device comprising a transformer. 11. 11. The processing device according to claim 10, wherein the transformer is grounded. Processing device with central tap. 12. The processing device according to claim 4, A support portion disposed in the processing chamber to support the article, A second radio frequency power supply for biasing the article with radio frequency energy; A processing apparatus further comprising: 13. 13. The processing apparatus according to claim 12, further comprising an insulating capacitor. The second radio frequency power supply biases the article through the insulating capacitor. Processing equipment. 14． 13. The processing device according to claim 12, wherein the second radio frequency power supply is A processing device that operates at a frequency of 13.56 MHz. 15. A device for treating at least the surface of an article with a plasma formed from a process gas. And To define a processing space and to process the article with the plasma. At least one inlet port for introducing the processing gas into the processing space; A processing chamber having The plasma processing chamber is connected to one end of the processing chamber to seal the processing chamber and form the plasma. A plasma source that induces A dielectric plate having a first surface forming a part of an inner wall surface of the processing chamber; And Two symmetrical about at least one point of a substantially flat induction coil Said substantially flat induction coil having a helical portion of The dielectric press is disposed on a second surface of the dielectric plate outside the processing chamber. Transfer energy to the processing chamber through the heat sink and close to the surface of the article. Preferably, the plasma is formed to provide a substantially uniform treatment along the article surface. Said substantially flat induction coil adapted to create a control speed. Processing equipment. 16. 16. The processing apparatus according to claim 15, wherein said substantially flat guiding core is provided. A processing device further comprising a radio frequency power supply for energizing the il. 17． 17. The processing apparatus according to claim 16, wherein the substantially flat guiding core is provided. In order to match the impedance of the A processing device further comprising a circuit connected to the flat induction coil. 18. 18. The processing apparatus according to claim 17, wherein the substantially flat guiding core is provided. And the impedance matching circuit has first and second leads. A first terminal connected to the radio frequency power supply, and the substantially flat induction coil; A second terminal connected to the first lead of the coil so that current can flow through the coil. Processing wherein the second lead of the coil flows from the first lead of apparatus. 19. 19. The processing apparatus according to claim 18, wherein the substantially flat guiding core is provided. A processing device wherein the second lead of the il is grounded. 20. 18. The processing apparatus according to claim 17, wherein the substantially flat guiding core is provided. And the impedance matching circuit has first and second leads. A first terminal connected to the first radio frequency power supply, the substantially flat induction coil; A second terminal connected to the first lead of the coil, and the substantially flat induction coil. A processing device having a third terminal connected to the second lead of the device. 21. 21. The processing apparatus according to claim 20, wherein the substantially flat guiding core is provided. The coil at the point where the at least two helical portions are symmetric. Grounded through an impedance matching circuit so that the first current From the first lead of the substantially flat induction coil to the impedance matching circuit And a second current flows from the second lead of the substantially flat induction coil. A processing device flowing toward the impedance matching circuit. 22. The processing device according to claim 17, wherein the impedance matching circuit is provided. A processing device wherein the road comprises a transformer. 23. Plasma for treating at least the surface of an article disposed inside the processing chamber A plasma source for forming a mask inside the processing chamber, A dielectric plate having a first surface forming a part of an inner wall surface of the processing chamber; An electrical energy source disposed outside the processing chamber, wherein the electrical energy source is A source of energy provides energy to the processing space via the dielectric plate; For forming the plasma by interacting with a processing gas; The energy source includes an induction coil having at least two helical portions, They are symmetric about at least one point of the induction coil; The induction coil is disposed on a second side of the dielectric plate, and the surface of the article is A high-density plasma is formed in the immediate vicinity of the Said electrical energy supply to produce a substantially uniform processing rate A plasma source including a source. 24. 24. The plasma generation source according to claim 23, wherein the electrical energy source is A plasma source including a first radio frequency power supply. 25. 25. The plasma source according to claim 24, wherein the induction coil has Impedance to match the impedance and the first radio frequency power supply. A plasma source further comprising a connected circuit. 26. 26. The source of claim 25, wherein the induction coil is a second source. 1 and a second lead, and the impedance matching circuit A first terminal connected to a frequency power supply; and a first lead of the induction coil. A plasma source having a connected second terminal. 27. 27. The plasma source according to claim 26, wherein the source is in front of the induction coil. A plasma source in which the second lead is grounded. 28. 26. The source of claim 25, wherein the induction coil is a second source. And an impedance matching circuit having the first and second leads. A first terminal connected to a radio frequency power supply, connected to the first lead of the induction coil; Second terminal, and a third terminal connected to the second lead of the induction coil A plasma source having: 29. 29. The plasma source according to claim 28, wherein the induction coil is The impedance at the point where the at least two helical portions of the Grounded through an impedance matching circuit, so that a first current flows through the induction coil. The second current flows from the first lead toward the impedance matching circuit, The current flows from the second lead of the induction coil to the impedance matching circuit. Plasma source. 30. 26. The plasma source according to claim 25, wherein the impedance is A plasma source wherein the matching circuit comprises a transformer. 31. 31. The source of claim 30, wherein the transformer is grounded. Plasma source with a closed center tap. 32. Plasma for treating at least the surface of an article disposed inside the processing chamber A plasma source for forming a mask inside the processing chamber, A dielectric plate having a first surface forming a part of an inner wall surface of the processing chamber; The first portion includes a first helical portion, and the second portion substantially corresponds to the first helical portion. A substantially planar induction coil comprising the same second helical portion; A substantially flat induction coil forming an "S-shaped" pattern; A flat induction coil disposed on a second surface of the dielectric plate outside the processing chamber; Energy is transferred to the processing space via the dielectric plate to directly Forming the plasma in close proximity to the substrate to provide a substantially uniform processing rate along the article surface. Said substantially flat induction coil adapted to create a degree Ma source. 33. A method of treating at least the article surface with plasma, The object is disposed inside a processing chamber having at least one inlet port for introducing a processing gas. Placing the article; Introducing the process gas at a controlled operating pressure into the process chamber; A plasma source is connected to one end of the processing chamber to seal the processing chamber and Inducing the formation of the plasma, wherein the plasma source comprises: A dielectric plate having a first surface forming a part of an inner wall surface of the processing chamber; And Two symmetrical about at least one point of a substantially flat induction coil Said substantially flat induction coil having a helical portion of The dielectric press is disposed on a second surface of the dielectric plate outside the processing chamber. Transfer energy to the processing chamber through the heat sink and close to the surface of the article. Preferably, the plasma is formed to provide a substantially uniform treatment along the article surface. Said substantially flat induction coil adapted to create a control speed. A method for treating the surface of an article made of plasma with plasma. 34. 34. The method of claim 33, wherein the substantially flat induction coil Coupling an energy source to energize the energy source. 35. 35. The method according to claim 34, wherein the energy source is radio frequency The way that is power. 36. 36. The method according to claim 35, wherein the radio frequency energy source is A method that operates in the frequency range of 2 to 13.56 MHz. 37. The method according to claim 34, wherein Connecting a first terminal of an impedance matching circuit to the energy source; The second terminal of the impedance matching circuit is connected to the second terminal of the substantially flat induction coil. 1 lead, whereby current flows from the first lead of the coil to the coil. Causing the fluid to flow to the second lead. 38. 38. The method of claim 37, wherein the substantially flat induction coil The method further comprising the step of: grounding the second lead of FIG. 39. The method according to claim 34, wherein Connecting a first terminal of an impedance matching circuit to the energy source; The second terminal of the impedance matching circuit is connected to the second terminal of the substantially flat induction coil. Connecting to one lead, A third terminal of the impedance matching circuit is connected to a third terminal of the substantially flat induction coil. Coupling to two leads. 40. 40. The method of claim 39, wherein the substantially flat induction coil At the point where the at least two helical portions are symmetrical. Ground through a capacitance matching circuit so that the first current Flowing from the first lead of the induction coil to the impedance matching circuit, A second current flows from the second lead of the substantially flat induction coil to the impedance. The method further comprising flowing to the dance matching circuit. 41. Treat at least the surface of the article with plasma formed from the processing gas Device for performing To define a processing space and to process the article with the plasma. At least one inlet port for introducing the processing gas into the processing space; A processing chamber having The plasma processing chamber is connected to one end of the processing chamber to seal the processing chamber and form the plasma. A plasma source that induces A dielectric plate having a first surface forming a part of an inner wall surface of the processing chamber; And The first portion includes a first helical portion and the second portion includes a second helical portion. A substantially planar induction coil, said first and second spirals The portions are substantially the same and form a continuous "S-shape" and A qualitatively flat induction coil is provided on the second surface of the dielectric plate outside the processing chamber. And transfer energy through the dielectric plate to the processing space. To form the plasma in the immediate vicinity of the article surface, A substantially uniform processing speed along the surface; And a flat induction coil.