JP2001319869A - Developing apparatus and developing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a developing apparatus and a developing method which prevent deposits or solids adhered to a developer feed nozzle from adhering to a substrate such as semiconductor wafers, thereby improving the production yield. SOLUTION: The developing apparatus for applying a developer to a substrate to develop after an exposure process comprises a developer feed nozzle 86 for feeding the developer onto the substrate (wafer W), moving mechanism for moving the feed nozzle 86 and the wafer W relatively to each other so as to scan the feed nozzle 86 over the wafer W, developer feed mechanism 89 for feeding the feed nozzle 86 with the developer, concentrating module 100 for concentrating a part of the developer to produce a concentrated developer, and nozzle cleaning mechanism 120 for cleaning the developer feed nozzle with the concentrated developer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing apparatus and a developing method for performing a developing process after exposure on a substrate such as a semiconductor wafer.

[0002]

2. Description of the Related Art In a resist coating / developing processing system for a photolithography step in a semiconductor device manufacturing process, a resist coating processing for forming a resist film on the surface of a semiconductor wafer and an exposure of the wafer after the resist coating are performed. After the processing, development processing for developing the wafer is performed. The resist coating processing and the development processing are performed by a resist coating processing unit and a development processing unit mounted on the system, respectively.

The development processing unit includes a spin chuck for holding and rotating a semiconductor wafer by suction, and a developer supply nozzle for supplying a developer to the semiconductor wafer on the spin chuck. Conventionally, the developer supply nozzle used in the development processing unit has a long nozzle body having a length longer than the diameter of the semiconductor wafer, and a large number of discharge ports are arranged in a line on the bottom surface. What was formed in the state is used.

As a method of applying a developing solution onto a semiconductor wafer by using such a developing solution supply nozzle, for example, a method of applying a developing solution supply nozzle to a semiconductor wafer above a semiconductor wafer held by a spin chuck is known. The semiconductor wafer is moved to a position overlapping with the diameter, and in this state, the developer is supplied to the space in the developer supply nozzle at a predetermined pressure and the developer is discharged from the discharge port to the semiconductor wafer, and the semiconductor wafer is rotated at least １ ／. Method. Further, a scanning method in which the developer is discharged while the developer supply nozzle scans the semiconductor wafer and the developer is applied onto the semiconductor wafer may be used.

[0005]

In any of the above-mentioned coating methods, the tip of the developing solution supply nozzle from which the developing solution is discharged is located close to the surface of the semiconductor wafer. In a state where the developing solution is liquid-filled on the semiconductor wafer, the discharge port is in contact with the liquid-filled developing solution. In such a state, when the developing solution is applied to a plurality of semiconductor wafers, solids are deposited and fixed on the tip of the developing solution supply nozzle. It is considered that this solid was deposited from the dissolved resist contained in the liquid developer.

That is, since the development of the resist is started from the time when the developing solution is applied to the substrate, the resist is dissolved in the developing solution which has been applied to the substrate.
When the tip of the developer supply nozzle comes into contact with the developer in which the resist is dissolved, the dissolved resist adheres to the developer supply nozzle. When the carbon dioxide gas in the atmosphere reacts with the developer containing the resist attached to the developer supply nozzle to reduce the concentration of the developer, the resist dissolved in the developer becomes a solid. It is thought to precipitate.

[0007] Since such a solid material has a property that it is difficult to dissolve in a developer used for normal development, the solid material may be separated from the developer supply nozzle and adhere to the substrate during the supply of the developer. In this case, a defect occurs in that portion, which causes a decrease in production yield.

[0008] However, solids are hardly removed because they do not dissolve so much in a normal developing solution. Further, when the developing solution supply nozzle is washed and solids are removed using another chemical such as pure water. Since different chemicals are used, a separate mechanism for supplying and recovering the chemical is required, and additional equipment such as drying the developer supply nozzle after processing is required. There was a problem that would be expensive.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and uses a developing apparatus having a mechanism for effectively removing solids deposited and fixed on a developing solution supply nozzle, and using the developing apparatus. An object of the present invention is to provide a developing method.

[0010]

Means for Solving the Problems In order to solve the above-mentioned problems, the present invention firstly provides a developing apparatus for applying a developing solution to a substrate after exposure processing and performing a developing processing, wherein A developer supply nozzle for discharging the developer, and a nozzle cleaning mechanism for cleaning the developer supply nozzle using a concentrated developer having a higher concentration than the developer discharged from the developer supply nozzle as a cleaning liquid. And a developing device provided with the developing device.

A second aspect of the present invention is a developing apparatus for performing a developing process by applying a developing solution to a substrate after an exposure process, and for cleaning a developing solution supply nozzle for discharging the developing solution onto the substrate. A concentrating module for producing a concentrated developer, wherein the concentrating module has a tubular body made of a semipermeable membrane, a box accommodating the tubular body, and a decompression means for decompressing the inside of the box. And a development processing device characterized by the following.

Thirdly, the present invention relates to a developing apparatus for applying a developing solution to a substrate after an exposure process and performing a developing process, wherein the developing solution supply nozzle for discharging the developing solution onto the substrate; As a supply nozzle scans over the substrate, a moving mechanism that causes relative movement between the developer supply nozzle and the substrate, a developer supply mechanism that supplies a developer to the developer supply nozzle, A developing method comprising: concentrating a part of a developing solution to produce a concentrated developing solution; and a nozzle cleaning mechanism for cleaning the developing solution supply nozzle using the concentrated developing solution. Processing device.

In the second and third developing apparatuses, a tubular body made of a semi-permeable membrane is accommodated in a box as a concentration module, and a developing solution is supplied to the inside of the tubular body while the inside of the box is decompressed. Is preferably used for degassing the water vapor and the dissolved gas in the developer by flowing the solution through.

A fourth aspect of the present invention is a developing method for applying a developing solution to the substrate after the exposure process and performing the developing process, wherein the developing solution supply nozzle for supplying the developing solution to the substrate is provided with a concentrated developing solution. A developing method comprising a washing step of washing with a liquid.

Fifth, the present invention relates to a developing method for applying a developing solution to a substrate after the exposure process and performing a developing process, wherein a developing solution supply nozzle for supplying the developing solution to the substrate is semi-permeable. It is manufactured by flowing a developing solution through a tubular body made of a film and depressurizing the inside of a box in which the tubular body is housed, thereby degassing dissolved gas and water vapor contained in the developing solution flowing through the tubular body. A washing process using a concentrated developer solution.

A sixth aspect of the present invention is a developing method for applying a developing solution to a substrate after the exposure process and performing a developing process, wherein a developing solution supply nozzle for supplying the developing solution to the substrate is provided on the substrate. A first step of discharging the developer onto the substrate while relatively moving between the developer supply nozzle and the substrate so as to perform scanning, and a developer supply nozzle having completed discharge of the developer onto the substrate In a washing bath, and a third step of discharging the concentrated developing solution to the developing solution supply nozzle accommodated in the washing bath to wash the developing solution supply nozzle. And a developing method.

According to the developing apparatus and the developing method of the present invention, the developing solution having a higher concentration than the developing solution used for developing the substrate after the exposure processing is used as the cleaning solution for the developing solution supply nozzle. Therefore, the solid matter deposited and fixed on the developer supply nozzle can be easily dissolved and removed. As a result, the frequency at which solids adhere to the substrate to cause defects is reduced, and product quality and yield are improved.

Further, since the concentrated washing solution used for washing can be collected together with the used developer, there is no need to provide a separate collecting means as compared with the case where another chemical is used as the washing solution. Regarding the supply path of the concentrated developer, by branching the supply path of the developer to the developer supply nozzle and providing the concentration means in the branched route, the structure can be simplified, and It is easy to upgrade existing equipment.

[0019]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic plan view showing a resist coating and developing system equipped with a developing unit according to an embodiment of the developing apparatus of the present invention, FIG. 2 is a front view thereof, and FIG. 3 is a rear view thereof.

This resist coating and developing system 1
Is a cassette station 10 which is a transfer station.
And a processing station 11 having a plurality of processing units
And an interface unit 12 for transferring a semiconductor wafer (wafer) W between an exposure apparatus (not shown) provided adjacent to the processing station 11.

The cassette station 10 carries a plurality of wafers W as objects to be processed, for example, in units of 25 wafers W, into a wafer cassette CR, and loads the wafer W from another system into the resist coating / developing processing system 1 or loads the resist W This is for carrying the wafer W between the wafer cassette CR and the processing station 11, such as carrying out the wafer from the coating / developing processing system 1 to another system.

In the cassette station 10, as shown in FIG.
A plurality of (four in the figure) positioning projections 20a along the direction
The wafer cassette CR can be placed in a line at the position of the projection 20a with the respective wafer entrances facing the processing station 11 side. In the wafer cassette CR, the wafers W are arranged in a vertical direction (Z direction). Also, the cassette station 10
A wafer transfer mechanism 21 is provided between the wafer cassette mounting table 20 and the processing station 11.

The wafer transfer mechanism 21 has a wafer transfer arm 21a movable in the cassette arrangement direction (X direction) and the wafer arrangement direction of the wafers W therein (Z direction). One of the wafer cassettes CR can be selectively accessed. In addition, the wafer transfer arm 21a is configured to be rotatable in the θ direction shown in FIG. 1, and includes an alignment unit (ALIM) and an extension unit belonging to a _third processing unit G3 on the processing station 11 side described later. (EXT) can also be accessed.

On the other hand, the processing station 11 is provided with a plurality of processing units for performing a series of steps when performing coating and development on the semiconductor wafer W, and these are arranged at predetermined positions in multiple stages. Thus, the semiconductor wafers W are processed one by one. This processing station 11
Has a wafer transfer path 22a at the center as shown in FIG. 1, in which a main wafer transfer mechanism 22 is provided, and all processing units are arranged around the wafer transfer path 22a. It has become. The plurality of processing units are divided into a plurality of processing units, and each processing unit includes a plurality of processing units arranged in multiple stages along a vertical direction (Z direction).

As shown in FIG. 3, the main wafer transfer mechanism 22 is provided with a wafer transfer device 46 inside a cylindrical support 49 so as to be able to move up and down in the vertical direction (Z direction). The cylindrical support 49 is rotatable by a rotational driving force of a motor (not shown), and accordingly, the wafer transfer device 46 is rotated.
Can be rotated integrally.

The wafer transfer device 46 includes a plurality of holding members 48 movable in the front-rear direction of the transfer base 47, and the transfer of the wafer W between the processing units is realized by these holding members 48. .

Further, as shown in FIG.
, Four processing units G₁・ G ₂・ G₃・ G₄But
It is actually arranged around the eha transport path 22a,
Processing unit G₅Can be arranged as needed. This
Among them, the first and second processing units G₁・ G₂Is a cash register
The front of the strike coating / developing processing system 1
The third processing unit G₃Is a cassette
A fourth processing unit G, which is disposed adjacent to the station 10;
₄Is disposed adjacent to the interface section 12.
You. Further, the fifth processing unit G₅Can be placed on the back
ing.

[0028] In the first processing unit _{G 1,} a coater cup (C
In P), a resist coating unit (COT), which is two spinner-type processing units for performing a predetermined process by placing the wafer W on a spin chuck (not shown), and a development processing unit (DEV) for developing a resist pattern ) Are stacked in two stages from the bottom. Similarly, the second processing section G _2, of the resist coating unit (COT) and developing unit (DEV) are two-tiered in order from the bottom as two spinner-type processing units.

[0029] In the third processing unit G ₃ are, as shown in FIG. 3, the oven-type processing units for performing predetermined processing put on the mounting table of the wafer W SP (FIG. 1) are multi-tiered . That is, a cooling unit (COL) for performing a cooling process, an adhesion unit (AD) for performing a so-called hydrophobizing process for improving the fixability of a resist, an alignment unit (ALIM) for performing positioning, and carrying in and out of the wafer W. Extension unit (EX
T), four hot plate units (HP) for performing a heating process on the wafer W before and after the exposure process and after the development process are stacked in eight stages from the bottom.
Note that a cooling unit (COL) may be provided instead of the alignment unit (ALIM), and the cooling unit (COL) may have an alignment function.

[0030] The fourth processing unit G ₄ also, the oven-type processing units are multi-tiered. That is, a cooling unit (COL), an extension cooling unit (EXTCOL) which is a wafer loading / unloading section provided with a cooling plate, and an extension unit (EX
T), a cooling unit (COL), and four hot plate units (HP) are stacked in eight stages from the bottom.

[0031] When providing the fifth processing unit G ₅ on the rear side of the main wafer transfer mechanism 22, the processing unit G ₅ of the fifth, laterally relative to the main wafer transfer mechanism 22 along the guide rails 25 It can be moved. Therefore, the fifth processing unit G
Even when ₅ is provided, a space portion is secured by sliding it along the guide rail 25, so that maintenance work can be easily performed from behind the main wafer transfer mechanism 21.

The interface section 12 is moved in the depth direction (X
Direction) has the same length as the processing station 11. As shown in FIGS. 1 and 2, a portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front of the interface section 12, and a peripheral exposure device 23 is arranged at the rear. The wafer transfer mechanism 24 is provided at the center.

The wafer transfer mechanism 24 has a wafer transfer arm 24a.
4a moves in the X and Z directions to move both cassettes CR and B
The R and the peripheral exposure device 23 can be accessed. Incidentally, the wafer transfer arm 24a is rotatable in θ direction, the extension unit included in the fourth processing unit G ₄ of the processing station 11 (EXT) and,
Further, it is also possible to access a wafer transfer table (not shown) on the adjacent exposure apparatus side.

In the above-described resist coating / developing processing system 1, first, in the cassette station 10, the wafer transfer arm 21 a of the wafer transfer mechanism 21 is used to store the unprocessed wafer W on the cassette mounting table 20. Accessing the cassette CR, one wafer W
It is removed and transported to the third processing section _{G 3} of the extension unit (EXT).

The wafer W is loaded from the extension unit (EXT) into the processing station 11 by the wafer transfer device 46 of the main wafer transfer mechanism 22.
Then, the alignment unit (A) of the _third processing unit G3
After alignment by LIM), the wafer is transported to an adhesion processing unit (AD), where a hydrophobizing process (HMDS process) for improving the fixability of the resist is performed. Since this process involves heating, the wafer W is then
The cooling unit (CO)
L) and cooled.

After the adhesion process is completed, the wafer W cooled by the cooling unit (COL) is continuously
A resist coating unit (CO
T), where a coating film is formed. After the coating process is completed, the wafer W is the third or the fourth processing unit _G 3 · _{G 4}
Is prebaked in any one of the hot plate units (HP), and then cooled in any one of the cooling units (COL).

The cooled wafer W is supplied to the third processing unit G ₃
Is conveyed to the alignment unit (ALIM), where it is aligned, it is conveyed to the interface section 12 via the fourth processing unit G ₄ extension units (EXT).

In the interface section 12, peripheral exposure is performed by a peripheral exposure apparatus 23 to remove excess resist. Thereafter, the wafer W is exposed to a predetermined light by an exposure apparatus (not shown) provided adjacent to the interface section 12. An exposure process is performed on the resist film of the wafer W according to the pattern.

The wafer W after exposure is returned again to the interface section 12 by the wafer transport mechanism 24, an extension unit included in the fourth processing unit _{G 4} (EX
T). The wafer W is transferred to one of the hot plate units (H
P) to be subjected to post-exposure bake processing, and then cooled by a cooling unit (COL).

Thereafter, the wafer W is transferred to the development processing unit (D
(EV), where the exposure pattern is developed. After the development is completed, the wafer W is transferred to one of the hot plate units (HP) and subjected to post-baking, and then cooled by the cooling unit (COL). After such a series of processing is completed, and returned to the cassette station 10 through the third processing unit G ₃ of the extension unit (EXT), is inserted into one of the wafer cassettes CR.

Next, the developing unit (DE
V) will be described in more detail. 4 and 5
FIG. 1 is a schematic cross-sectional view and a schematic plan view illustrating the entire configuration of a development processing unit (DEV).

An annular cup CP is disposed at the center of the developing unit (DEV), and a spin chuck 52 is disposed inside the cup CP. The spin chuck 52 is rotationally driven by a drive motor 54 in a state where the wafer W is fixedly held by vacuum suction. The drive motor 54 is disposed at an opening of the unit bottom plate 50 so as to be able to move up and down, and is connected to a lift drive means 60 and a lift guide means 62 such as an air cylinder via a cap-like flange member 58 made of, for example, aluminum. . A cylindrical cooling jacket 64 made of, for example, stainless steel (SUS) is attached to a side surface of the drive motor 54.
It is attached to cover the upper half.

When the developing solution is applied, the lower end of the flange member 58 is in close contact with the unit bottom plate 50 near the outer periphery of the opening of the unit bottom plate 50, thereby sealing the inside of the unit.
When the wafer W is transferred between the spin chuck 52 and the main wafer transfer mechanism 22, the lifting drive mechanism 60 raises the drive motor 54 or the spin chuck 52 to move the lower end of the flange member 58 to the unit bottom plate 5.
It floats from zero. Note that a window 70 through which the wafer holding member 48 enters is formed in the housing of the development processing unit (DEV).

The developing solution supply nozzle 86 for supplying the developing solution to the surface of the wafer W has a long shape and is arranged with its longitudinal direction horizontal, and a developing solution supply section 89 is provided through a developing solution supply pipe 88. It is connected to the. This developer supply nozzle 8
6 is detachably attached to the tip of the nozzle scan arm 92. The scan arm 92 is attached to the upper end of a vertical support member 96 that can move horizontally on a guide rail 94 laid in one direction (Y direction) on the unit bottom plate 50. It moves in the Y direction integrally with the support member 96. The developer supply nozzle 86 is provided with the Z-axis drive mechanism 1.
12 allows movement in the vertical direction (Z direction).

As shown in FIG. 6, the developing solution supply nozzle 86 has a plurality of discharge ports 87 on its lower surface.
The one in which the discharged developer is formed in a band shape as a whole is preferably used. When applying the developer,
The developer supply nozzle 86 is moved along the guide rail 94 by the Y-axis drive mechanism 111 so as to scan over the wafer W while discharging the developer from the developer supply nozzle 86 in a strip shape on the wafer W.

The developing solution supply nozzle 86 can reciprocate while discharging the developing solution. Therefore, the developing solution is directed toward the wafer W regardless of the scanning direction. It is configured so that the developer can be discharged perpendicularly to the wafer W so that the liquid can be discharged. In the above embodiment, the developer supply nozzle 86 is moved so as to scan in the Y-axis direction. However, the developer supply nozzle 86 is moved to a position overlapping the diameter of the wafer W above the wafer W, for example, to a position shown in FIG. Move it and in that state,
An apparatus and a method for rotating the wafer W at least １ ／ while discharging the developer onto the wafer W may be used.

The developer supply nozzle 86 is connected to the nozzle standby section 1
15 (FIG. 5), and a standby portion 115 is provided with a nozzle cleaning mechanism (nozzle bath) 120 for cleaning the developer supply nozzle 86. Also,
As shown in FIG. 4, a branch pipe 88 a is provided in the developer supply pipe 88, and a part of the developer supplied from the developer supply unit 89 can be sent to the nozzle cleaning mechanism 120. It has become. A concentrating module 100 for concentrating the developing solution and producing a concentrated developing solution used for cleaning the developing solution supply nozzle 86 is provided in the middle of the branch pipe 88a.

With such a configuration, the concentrated developer used for cleaning the developer supply nozzle 86 can be easily produced from the developer used for developing the wafer W. It is not necessary to newly provide a cleaning liquid supply path for the liquid supply nozzle. However, the branch pipe 88a
May be used to supply the concentrated developer directly from the developer supply unit 89 to the nozzle cleaning mechanism 120 via the concentration module 100, and even in this case, different types of cleaning liquids may be used. This is advantageous in terms of the device configuration in that there is no need to provide a different cleaning liquid supply mechanism as compared with the case of using.

In the nozzle cleaning mechanism 120, a developer supply nozzle 86 is mounted in the cleaning bath 71 as shown in the plan view (a) and the sectional views (b) and (c) of FIG. A bus chamber 72 is formed, and a drain groove (discharge groove) 73 is formed on the bottom surface of the bus chamber 72, and the drain groove 73 is connected to a drain tube 74. Bath room 7
A pair of supply pipes 75 for supplying a chemical solution for cleaning the developer supply nozzle 86 is provided on the side wall of the nozzle 2, and a number of discharge nozzles 76 for discharging the chemical solution are provided inside the pair of supply pipes 75. Are formed.

In the present invention, the concentrated developer manufactured in the concentration module 100 is used as a cleaning chemical for the developer supply nozzle 86. The concentration of the concentrated developer to be produced may be within a range in which solids deposited and fixed at the tip of the developer supply nozzle 86 can be dissolved. For example, the concentration of the developer is about 2.4%. In such a case, the conditions are suitably set according to the type of the developer used and the dissolution characteristics of the resist in which the developer dissolves, such as concentration to 3% or more. It should be noted that it takes a long time to produce a concentrated concentrate, and it is necessary to use a high-pressure pump for the decompression pump 33. Preferably, the concentration is low.

The drain pipe 74 is provided with an opening / closing valve 77. By closing the opening / closing valve 77, a chemical can be stored in the bath chamber 72 or in the drain groove 73. As will be described later, the tip of the developer supply nozzle 86 can be cleaned by discharging the chemical from the discharge nozzle 76 to the developer supply nozzle 86, and the developer can be also cleaned by the chemical stored in the drain groove 73. The tip of the supply nozzle 86 can be cleaned.

Since the used concentrated developer can be recovered together with the developer after the development processing of the wafer W,
Compared with the case where other chemicals such as pure water or solvent are used as the cleaning liquid, there is no need to perform separation and recovery, so the structure of the device can be simplified and application to existing equipment is possible. Also becomes easier.

The structure and concentration mechanism of the concentration module 100 are not limited as long as the device can concentrate the developer. In the present invention, for example, as shown in FIG. A bundle of several hundred to 1,000 tubular bodies 32 made of a semipermeable membrane inside a body 31 (FIG. 8).
In only three are shown. ), The developing solution is caused to flow into the tubular body 32 in a state where the outside of the tubular body 32, that is, the inside of the box body 31 is decompressed by the decompression pump 33 or the like, so that water vapor and dissolved gas in the developing solution are Is preferably used. The concentrating module 100 has a feature that, since the structure is simple, the apparatus cost is not increased and the maintenance is easy. As the semipermeable membrane, for example, an olefin-based porous membrane or a fluororesin-based porous membrane is suitably used.

The concentrated developer produced in the concentration module 100 is sent to the nozzle cleaning mechanism 120, and is supplied through the supply pipe 75 from the discharge nozzle 76 to the developer supply nozzle 86.
Is discharged toward the tip (near the discharge port). conventionally,
As a cleaning chemical for the developer supply nozzle, another chemical, for example, when pure water is used, solids are not dissolved and are only mechanically removed by the force of the water from the discharge nozzle 76, and are not necessarily required. As a result, the remaining solids could cause defects in the wafer W because they could not be sufficiently removed. However, the concentrated developer has a high resist dissolving characteristic, and can dissolve solids deposited and fixed at the tip of the developer supply nozzle 86.
It is possible to easily dissolve and remove the solid matter mainly adhered to the tip.

The operation of the drive system of the development processing unit (DEV) is controlled by the control unit 110. That is, the drive motor 54 and the Y-axis drive mechanisms 111 and Z
The shaft drive mechanism 112 is driven by a command from the control unit 110. In addition, supply of the developer from the developer supply unit 89,
The operation of the concentration module 100 and the processing of the nozzle cleaning mechanism 120 are also controlled by the control unit 110.

The development processing unit (DEV) has a rinse nozzle 102 for discharging a cleaning liquid. The rinsing nozzle 102 includes a nozzle scan arm 1 movably provided on a guide rail 94 in the Y direction.
04. Thus, after the completion of the developing process with the developing solution, the cleaning solution is moved onto the wafer W and the cleaning solution is discharged onto the wafer W.

Next, the operation of the developing process in the developing unit (DEV) configured as described above will be described. A predetermined pattern is exposed, the wafer W subjected to the post-exposure bake processing and the cooling processing is transferred to a position directly above the cup CP by the main wafer transfer mechanism 22, and is vacuum-sucked to the spin chuck 52 raised by the lifting drive mechanism 60. You.

Next, the developer supply nozzle 86 moves the wafer W
While the developer is supplied in a strip shape from the developer supply nozzle 86,
The developer supply nozzle 86 is moved by the shaft moving mechanism 111 to a position above the other end of the wafer W in the Y-axis direction.
Subsequently, the developer supply nozzle 86 is moved to a position above the first end in the Y-axis direction by the Y-axis moving mechanism 111 while the developer is discharged from the developer supply nozzle 86 in a strip shape.
After performing such reciprocating motion of the developer supply nozzle 86 a predetermined number of times, the developer supply nozzle 86 is moved to the nozzle standby unit 115.
To the bathroom 72.

The wafer W is stopped for a predetermined time in a state where the developing solution is filled on the wafer W as described above, and the developing process proceeds by natural convection. And
After a lapse of a predetermined time, the wafer W is rotated by the spin chuck 52 to shake off the developing solution.
02 is moved above the wafer W, and the rinse nozzle 102
And the developing solution remaining on the wafer W is washed away.

Thereafter, the spin chuck 52 is rotated at a high speed, the developing solution and the cleaning solution remaining on the wafer W are blown off, and the wafer W is dried. Thus, a series of development processing ends.

On the other hand, with respect to the developer supply nozzle 86 installed in the bath chamber 72, the concentrated developer produced in the concentration module 100 is discharged from the discharge port 76 mainly toward the front end of the developer supply nozzle 86. Then, a cleaning process is performed. With this concentrated developer, the developer supply nozzle 8
The solids deposited and adhered mainly to the tip of No. 6 are dissolved.
Also, solids can be removed by immersing the tip of the developer supply nozzle 86 in the concentrated developer stored in the bath chamber 72 or in the drain groove 73.

Further, a discharge port for an inert gas such as nitrogen gas is provided in the bath chamber 72, and after the end of the developing solution supply nozzle 86 is washed with a concentrated developing solution, dry purging with nitrogen gas or the like is performed. A combination process may be performed.

As described above, when the developing solution supply nozzle 86 is discharging the developing solution to the wafer W, the solid material moves to the wafer W together with the developing solution and adheres to the wafer W, or moves over the wafer W. Occurrence of a defect on the wafer W due to the occasional solid matter falling onto the wafer W due to falling on the wafer W or the like is prevented, and the production yield is improved.

The present invention is not limited to the above embodiment, and various modifications are possible. For example, the developer supply nozzle is not limited to the one described above. For example, a developer supply nozzle 186 having a slit-like developer discharge port 187 as shown in FIG. 9 may be used. The present invention can also be applied to a case where a cylindrical pipe-shaped developer supply nozzle is used according to the size of a substrate such as a wafer W. That is, the present invention can be used regardless of the shape of the developer supply nozzle.

The cleaning process of the developing solution supply nozzle is performed as follows.
The process does not have to be performed once for one wafer W, and is performed after processing a plurality of wafers W while observing the state of solid deposition at the tip of the developer supply nozzle.
The cleaning process of the developer supply nozzle may be performed twice.
Further, the development processing unit incorporated in the resist coating / development processing system for a semiconductor wafer has been described. However, the development processing unit may be used alone, or a substrate to be processed other than the semiconductor wafer, for example, an LCD substrate The invention can also be applied to a developing device for use.

[0066]

As described above, according to the present invention,
Since solid matter deposited and fixed on the developer supply nozzle can be completely and easily removed, the cleaning performance is improved as compared with the case of using other chemicals, and the solid matter adhered to the developer supply nozzle This prevents a solid from adhering to a substrate such as a wafer and causing a defect. In this way, the production yield is improved, that is, the manufacturing cost is reduced. Further, since the used concentrated developer can be collected together with the developer used for the development processing of the substrate, it is easy to apply the present invention to existing equipment. In addition, the concentrated developer
Since it can be easily manufactured from the developer used for developing the substrate, it is not necessary to newly provide all supply means. Since the structure of the module for concentrating the developing solution is also simple, there is an advantage that the apparatus cost is not increased and the maintenance is easy.

[Brief description of the drawings]

FIG. 1 is a plan view showing an overall configuration of a semiconductor wafer resist coating / developing system incorporating a developing unit according to an embodiment of the present invention.

FIG. 2 is a front view showing the overall configuration of a semiconductor wafer resist coating / developing system incorporating a developing unit according to an embodiment of the present invention.

FIG. 3 is a rear view showing the overall configuration of a semiconductor wafer resist coating / developing processing system incorporating the developing processing unit according to the embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating the overall configuration of a developing unit according to an embodiment of the present invention.

FIG. 5 is a plan view showing the developing unit shown in FIG. 4;

FIG. 6 is a perspective view showing an embodiment of a developer supply nozzle used in the development processing unit shown in FIG. 4;

FIG. 7 is a plan view and a cross-sectional view illustrating an embodiment of a nozzle cleaning mechanism provided in the developing unit illustrated in FIG.

FIG. 8 is a cross-sectional view showing one embodiment of a concentration module disposed in the development processing unit shown in FIG.

FIG. 9 is a perspective view showing another embodiment of the developer supply nozzle used in the development processing unit shown in FIG. 4;

[Explanation of symbols]

 31; Box 32; Tubular body 33; Vacuum pump 71; Cleaning bath 72; Bath chamber 73; Drain groove 75; Cleaning liquid supply pipe 76; Discharge nozzle 86; Developing liquid supply nozzle 88; Developing liquid supply pipe 89; Unit 100; concentration module 110; control unit (control mechanism) 120; nozzle cleaning mechanism DEV; development processing unit W; semiconductor wafer (substrate)

Claims (10)

[Claims] 1. A developing apparatus for applying a developing solution to a substrate after an exposure process and performing a developing process, comprising: a developing solution supply nozzle for discharging the developing solution onto the substrate; And a nozzle cleaning mechanism for cleaning the developer supply nozzle using a concentrated developer having a higher concentration than the developing solution as a cleaning solution. 2. A developing apparatus for applying a developing solution to a substrate after an exposure process and performing a developing process, wherein the developing device manufactures a concentrated developing solution for cleaning a developing solution supply nozzle for discharging the developing solution onto the substrate. A developing module, comprising: a tubular body made of a semipermeable membrane; a box housing the tubular body; and a decompression unit configured to decompress the inside of the box. Processing equipment. 3. A developing apparatus for performing a developing process by applying a developing solution to a substrate after the exposure process, wherein a developing solution supply nozzle for discharging the developing solution onto the substrate; A moving mechanism for causing relative movement between the developer supply nozzle and the substrate so as to scan above, a developer supply mechanism for supplying a developer to the developer supply nozzle, and a part of the developer And a nozzle cleaning mechanism for cleaning the developer supply nozzle using the concentrated developer. 4. The concentrating module according to claim 3, further comprising: a tubular body made of a semi-permeable membrane; a box accommodating the tubular body; and a decompression unit for decompressing the box. 3. The developing apparatus according to claim 1. 5. The membrane according to claim 2, wherein the semipermeable membrane is an olefin-based porous membrane or a fluororesin-based porous membrane.
Alternatively, the development processing apparatus according to claim 4. 6. The developer processing according to claim 1, wherein the concentrated developer has a concentration that dissolves a solid component attached to the developer supply nozzle. apparatus. 7. A developing method for applying a developing solution to a substrate after an exposure process and performing a developing process, wherein a developing solution supply nozzle for supplying the developing solution to the substrate is cleaned using a concentrated developing solution. A developing method, comprising: 8. A developing method for applying a developing solution to a substrate after the exposure process and performing a developing process, wherein a developing solution supply nozzle for supplying the developing solution to the substrate is developed in a tubular body made of a semi-permeable membrane. The concentrated developer is produced by flowing a liquid and depressurizing the inside of the box housing the tubular body, thereby degassing dissolved gas and water vapor contained in the developer flowing through the tubular body. A developing treatment method comprising a step of washing using the film. 9. A developing method for applying a developing solution to a substrate after the exposure process and performing a developing process, wherein a developing solution supply nozzle for supplying the developing solution to the substrate is scanned on the substrate. A first step of discharging the developing solution onto the substrate while relatively moving between the developing solution supply nozzle and the substrate; and housing the developing solution supply nozzle after the discharging of the developing solution onto the substrate in the cleaning bath. And a third step of discharging the concentrated developer to the developer supply nozzle accommodated in the cleaning bath to clean the developer supply nozzle. Method. 10. The developing method according to claim 9, wherein the processing of the third step is performed after the processing of the first step and the processing of the second step are repeated a predetermined number of times.