JP2001203218A5 - - Google Patents

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Publication number: JP2001203218A5
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP2000357218A

Other versions

JP2001203218A (ja

Filing date

2000-11-24

Publication date

2007-09-13

1999-11-24 Priority claimed from US09/447,933 external-priority patent/US6291310B1/en

2000-11-24 Application filed filed Critical

2001-07-27 Publication of JP2001203218A publication Critical patent/JP2001203218A/ja

2007-09-13 Publication of JP2001203218A5 publication Critical patent/JP2001203218A5/ja

Status Pending legal-status Critical Current

Links

JP2000357218A 1999-11-24 2000-11-24 半導体デバイスのトレンチの集積度を増大する方法 Pending JP2001203218A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US447933		1999-11-24
US09/447,933 US6291310B1 (en)	1999-11-24	1999-11-24	Method of increasing trench density for semiconductor

Publications (2)

Publication Number	Publication Date
JP2001203218A JP2001203218A (ja)	2001-07-27
JP2001203218A5 true JP2001203218A5 (ja)	2007-09-13

Family

ID=23778336

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2000357218A Pending JP2001203218A (ja)	1999-11-24	2000-11-24	半導体デバイスのトレンチの集積度を増大する方法

Country Status (3)

Country	Link
US (2)	US6291310B1 (ja)
JP (1)	JP2001203218A (ja)
TW (1)	TW465023B (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6406982B2 (en) *	2000-06-05	2002-06-18	Denso Corporation	Method of improving epitaxially-filled trench by smoothing trench prior to filling
JP2002231945A (ja) *	2001-02-06	2002-08-16	Denso Corp	半導体装置の製造方法
US6800899B2 (en) *	2001-08-30	2004-10-05	Micron Technology, Inc.	Vertical transistors, electrical devices containing a vertical transistor, and computer systems containing a vertical transistor
US20050106794A1 (en) *	2002-03-26	2005-05-19	Fuji Electric Holdings Co., Ltd.	Method of manufacturing a semiconductor device
JP4123961B2 (ja) *	2002-03-26	2008-07-23	富士電機デバイステクノロジー株式会社	半導体装置の製造方法
US6740571B2 (en) *	2002-07-25	2004-05-25	Mosel Vitelic, Inc.	Method of etching a dielectric material in the presence of polysilicon
JP2004111747A (ja) *	2002-09-19	2004-04-08	Tokyo Electron Ltd	半導体基板の処理方法及び半導体素子
US6872606B2 (en) *	2003-04-03	2005-03-29	Taiwan Semiconductor Manufacturing Company, Ltd.	Semiconductor device with raised segment
US6911367B2 (en) *	2003-04-18	2005-06-28	Micron Technology, Inc.	Methods of forming semiconductive materials having flattened surfaces; methods of forming isolation regions; and methods of forming elevated source/drain regions
KR100471001B1 (ko) *	2003-07-02	2005-03-14	삼성전자주식회사	리세스형 트랜지스터 및 그의 제조방법
WO2005093824A1 (en) *	2004-03-23	2005-10-06	Koninklijke Philips Electronics N.V.	Method of manufacturing a semiconductor device and semiconductor device obtained by means of said method
US7402863B2 (en) *	2004-06-21	2008-07-22	International Rectifier Corporation	Trench FET with reduced mesa width and source contact inside active trench
KR100689211B1 (ko) *	2004-12-11	2007-03-08	경북대학교 산학협력단	안장형 엠오에스 소자
US7553740B2 (en) *	2005-05-26	2009-06-30	Fairchild Semiconductor Corporation	Structure and method for forming a minimum pitch trench-gate FET with heavy body region
US7829941B2 (en) *	2006-01-24	2010-11-09	Alpha & Omega Semiconductor, Ltd.	Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions
WO2009129018A1 (en)	2008-04-16	2009-10-22	Momenta Pharmaceuticals, Inc.	Analysis of amino acid copolymer compositions
ES2523732T5 (es) *	2009-04-03	2023-10-23	Momenta Pharmaceuticals Inc	Control de composiciones de copolímeros
KR20100111162A (ko) *	2009-04-06	2010-10-14	삼성전자주식회사	리세스 채널 모스 트랜지스터를 갖는 반도체소자 제조방법
KR101651941B1 (ko) *	2010-02-16	2016-08-30	삼성전자주식회사	리세스 채널을 포함하는 반도체 소자의 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5607511A (en) *	1992-02-21	1997-03-04	International Business Machines Corporation	Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US5268311A (en) *	1988-09-01	1993-12-07	International Business Machines Corporation	Method for forming a thin dielectric layer on a substrate
JP2891205B2 (ja) *	1996-10-21	1999-05-17	日本電気株式会社	半導体集積回路の製造方法

1999
- 1999-11-24 US US09/447,933 patent/US6291310B1/en not_active Expired - Lifetime
2000
- 2000-11-23 TW TW089124927A patent/TW465023B/zh not_active IP Right Cessation
- 2000-11-24 JP JP2000357218A patent/JP2001203218A/ja active Pending
2001
- 2001-05-01 US US09/846,872 patent/US20010034109A1/en not_active Abandoned

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