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JP2001121287A - BRAZING FILLER METAL FOR Al SERIES METAL AND CERAMICS CIRCUIT BOARD USING THE SAME - Google Patents

BRAZING FILLER METAL FOR Al SERIES METAL AND CERAMICS CIRCUIT BOARD USING THE SAME

Info

Publication number
JP2001121287A
JP2001121287A JP29938699A JP29938699A JP2001121287A JP 2001121287 A JP2001121287 A JP 2001121287A JP 29938699 A JP29938699 A JP 29938699A JP 29938699 A JP29938699 A JP 29938699A JP 2001121287 A JP2001121287 A JP 2001121287A
Authority
JP
Japan
Prior art keywords
brazing material
circuit board
metal
ceramic
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29938699A
Other languages
Japanese (ja)
Inventor
Yoichi Ogata
陽一 尾形
Isao Sugimoto
勲 杉本
Hideyuki Emoto
秀幸 江本
Masahiro Ibukiyama
正浩 伊吹山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP29938699A priority Critical patent/JP2001121287A/en
Publication of JP2001121287A publication Critical patent/JP2001121287A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a ceramics circuit board with high reliability having an Al circuit almost free from the variation of the thickness of a circuit layer and stable in joining. SOLUTION: In this brazing filler metal for joining a ceramics board and a metallic sheet consisting essentially of Al, the content of oxygen is <=0.5 mass %, and, preferably, an Al series brazing filler metal containing Mg of 0.05 to 3 mass % is used.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、パワーモジュール
等に使用されるセラミックス基板と、回路や放熱板を形
成する金属板との接合用ろう材、並びにそれを用いてな
る、高信頼性のセラミックス回路基板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a brazing material for joining a ceramic substrate used for a power module or the like to a metal plate forming a circuit or a heat sink, and a highly reliable ceramic using the same. Related to a circuit board.

【0002】[0002]

【従来の技術】従来から、パワーモジュール等の熱発生
の大きい半導体素子等を搭載するために、アルミナ(A
23)セラミックス等の絶縁性に優れたセラミックス
基板の表面に、導電性を有する回路層を接合してなるセ
ラミックス回路基板が広く普及している。
2. Description of the Related Art Conventionally, alumina (A) has been used to mount a semiconductor element or the like which generates a large amount of heat such as a power module.
l 2 O 3 ) Ceramic circuit boards formed by bonding a conductive circuit layer to the surface of a ceramic substrate having excellent insulating properties such as ceramics are widely used.

【0003】セラミックス回路基板に関しては、搭載さ
れる機器類の小型化、高性能化に伴って熱発生量が増加
する傾向にあり、信頼性高く安定動作を得るために、半
導体素子等が発生する熱を放散して、素子が破壊されな
い温度より充分低くすることが一層重要な課題となって
きており、セラミックス基板の特性として電気絶縁性が
高いことに加え、より一層の高熱伝導性が要求されてい
る。
[0003] With respect to ceramic circuit boards, the amount of heat generated tends to increase with the miniaturization and high performance of equipment to be mounted, and semiconductor elements and the like are generated in order to obtain reliable and stable operation. It is becoming more important to dissipate heat and make the temperature sufficiently lower than the temperature at which the element is not destroyed. In addition to high electrical insulation properties, ceramic substrates are required to have even higher thermal conductivity. ing.

【0004】上記の要求に伴って、熱放散性に優れる窒
化アルミニウム(AlN)などのセラミックスを基板材
料として用い、該基板上に導電性の銅からなる回路を設
けた銅回路基板が開発されている。しかし、前記銅回路
基板は機械的特性が不充分であり、回路基板として用い
る場合には、半導体素子の作動に伴う繰り返しの熱サイ
クルや動作環境の温度変化等で、セラミックス部分の銅
回路層の接合部付近にクラックが発生しやすく、信頼性
が低いという問題点がある。
In response to the above demand, a copper circuit board has been developed in which ceramics such as aluminum nitride (AlN) having excellent heat dissipation properties are used as a substrate material and a circuit made of conductive copper is provided on the substrate. I have. However, the copper circuit board has insufficient mechanical characteristics, and when used as a circuit board, the copper circuit layer of the ceramic portion may be subjected to repeated thermal cycles or temperature changes in the operating environment due to the operation of the semiconductor element. There is a problem that cracks are likely to occur near the joint and reliability is low.

【0005】この問題の解決として、例えば特開平4−
12554号公報や特開平4−18746号公報に、回
路材料として銅よりも降伏耐力の小さいアルミニウム
(Al)を用いたセラミックス回路基板が開示されてい
る。
As a solution to this problem, for example, Japanese Unexamined Patent Publication No.
JP-A No. 12554 and JP-A-4-18746 disclose ceramic circuit boards using aluminum (Al) having a lower yield strength than copper as a circuit material.

【0006】しかし、−40℃から125℃までの繰り
返しの冷却、加熱する耐ヒートサイクル試験を行うと、
前記回路基板であっても1000回程度でアルミニウム
回路材の剥離が起こったり、セラミックス基板にクラッ
クが入る等の問題が発生し、高い信頼性の要求される用
途には充分対応ができない。
However, when a heat cycle test in which cooling and heating are repeated from −40 ° C. to 125 ° C. is performed,
Even with the above circuit board, problems such as peeling of the aluminum circuit material or cracking of the ceramics substrate occur after about 1000 times, and cannot sufficiently cope with applications requiring high reliability.

【0007】また、特開平8−208359号公報に
は、Alの溶湯を用いて、Alを直接AlN基板に接合
した回路基板が開示されている。この発明によれば、A
l回路基板単体で3000回を越える耐ヒートサイクル
性が達成されている。
Further, Japanese Patent Application Laid-Open No. 8-208359 discloses a circuit board in which Al is directly bonded to an AlN substrate by using a molten metal of Al. According to the present invention, A
The heat cycle resistance of more than 3000 times is achieved with a single circuit board.

【0008】しかし、Al溶湯を用いて直接接合してい
るために、Al回路層の厚さのバラツキが大きく、安定
して信頼性の高い回路基板が得られないだけでなく、設
備費や設備の維持管理がかかりコストアップになるとい
う問題がある。
[0008] However, the direct bonding using the molten aluminum causes a large variation in the thickness of the Al circuit layer, so that not only a stable and highly reliable circuit board cannot be obtained, but also equipment cost and equipment. There is a problem that maintenance is required and the cost is increased.

【0009】一方、Al回路をセラミックス基板上に設
ける方法としてAl系ろう材を介する方法が知られてい
るが、このろう材接合方法には、Al回路層の厚さバラ
ツキはほとんどなく、設備コストは安価であるが、接合
が安定しない場合があり、その歩留まりも必ずしも満足
できるものではないという問題がある。
On the other hand, as a method of providing an Al circuit on a ceramic substrate, a method of interposing an Al-based brazing material is known. However, in this brazing material joining method, there is almost no variation in the thickness of the Al circuit layer, and equipment costs are reduced. Is inexpensive, but the bonding may not be stable, and the yield is not always satisfactory.

【0010】[0010]

【発明が解決しようとする課題】本発明は、上記公知技
術の事情に鑑みてなされたものであり、例えば、電気自
動車や鉄道等の用途向けのパワーモジュール等に適用で
きる、極めて信頼性の高いセラミックス回路基板を提供
することを目的とするものである。
SUMMARY OF THE INVENTION The present invention has been made in view of the circumstances of the above-mentioned known art, and is, for example, extremely reliable and can be applied to power modules for electric vehicles and railways. It is an object of the present invention to provide a ceramic circuit board.

【0011】[0011]

【課題を解決するための手段】本発明者は、上記目的を
達成するために、Al系ろう材について詳細に検討した
結果、セラミックス基板とAlを主成分とする回路用金
属板とをAl系ろう材で接合する際、Al系ろう材中の
酸素量が特定量以下とするときに、セラミックス基板と
Al系ろう材、更にAl系ろう材と回路用金属板との接
合状態を良好とできることを見いだした。その結果、得
られるセラミックス回路基板が実使用下で受ける加熱、
冷却のサイクルによっても、回路材の剥離が起こった
り、セラミックス基板にクラックを生じたりすることが
ない、という知見を得て、本発明に至ったものである。
前記の理由については明かでないが、Al系の接合用ろ
う材は、原料としてAlは再生品が使われることが多い
こと、合金を溶融製造する際に酸化されやすいこと、ま
た、ろう材としては金属粉末として用いられることが少
なくなく、このために空気中の酸素により金属粉末表面
が酸化されやすいこと等の理由から、含有酸素の量が多
くなる場合がある。この含有酸素は、しかし、ろう材中
ではほとんどが金属酸化物となって存在していると考え
られ、このためにAl系ろう材中の酸素量が多いと、セ
ラミックス基板とろう材、並びに金属回路板とろう材の
接触が不充分となり、その結果、接合状態が不良なろう
接状態しか得られないと考えられる。そして、見掛け上
接合しているように見える回路基板は、ヒートサイクル
試験等において、回路用金属板がセラミックス基板から
剥離する等の問題点が生じ、充分な信頼性が確保できな
いというものである。
Means for Solving the Problems In order to achieve the above object, the present inventor has studied in detail Al-based brazing material, and has found that a ceramic substrate and a circuit metal plate containing Al as a main component are made of Al-based brazing material. When joining with a brazing material, when the oxygen amount in the Al-based brazing material is equal to or less than a specific amount, it is possible to improve the bonding state between the ceramic substrate and the Al-based brazing material, and furthermore, between the Al-based brazing material and the metal plate for a circuit. Was found. As a result, the resulting ceramic circuit board receives heat in actual use,
The present invention has been made based on the finding that the circuit material does not peel off or the ceramic substrate does not crack even by the cooling cycle.
Although the reason for the above is not clear, Al-based brazing filler metal is that, as a raw material, Al is often used as a recycled product, that it is easily oxidized when the alloy is melt-produced, and that the brazing filler metal is Since the metal powder is often used as a metal powder and the surface of the metal powder is easily oxidized by oxygen in the air, the amount of oxygen contained in the metal powder may increase. However, it is considered that most of the oxygen content is present as a metal oxide in the brazing material. Therefore, if the oxygen content in the Al-based brazing material is large, the ceramic substrate, the brazing material, and the metal It is considered that the contact between the circuit board and the brazing material becomes insufficient, and as a result, only a brazing state in which the bonding state is poor can be obtained. The circuit board that appears to be bonded appears to have problems such as peeling of the circuit metal plate from the ceramic substrate in a heat cycle test or the like, and sufficient reliability cannot be ensured.

【0012】即ち、本発明は、セラミックス基板とAl
を主成分とする金属板とを接合するろう材であって、酸
素量が0.5質量%以下であることを特徴とするろう材
であり、また、Mgが0.05質量%以上3質量%以下
であることを特徴とするろう材である。特に、Cu、S
i、Geのうちの少なくとも一種以上を含むAlである
ことが好ましい。また、Alを主成分とする金属板を、
上記ろう材を介して、窒化アルミニウム、窒化珪素、炭
化珪素、アルミナからなる群より選ばれた一種以上のセ
ラミックス基板に接合してなることを特徴とするセラミ
ックス回路基板である。
That is, the present invention provides a ceramic substrate and Al
Is a brazing material for joining a metal plate whose main component is oxygen, wherein the amount of oxygen is 0.5% by mass or less, and Mg is 0.05% by mass or more and 3% by mass. % Or less. In particular, Cu, S
It is preferable to be Al containing at least one of i and Ge. Also, a metal plate containing Al as a main component is
A ceramic circuit board characterized by being joined to one or more ceramic substrates selected from the group consisting of aluminum nitride, silicon nitride, silicon carbide, and alumina via the brazing material.

【0013】[0013]

【発明の実施の形態】本発明のろう材は、酸素量は0.
5質量%以下であるろう材である。0.5質量%を越え
ると、セラミックス基板とAlを主成分とする金属板と
を接合する際、ろう接欠陥を発生させないような比較的
低い接合温度では歩留まりよく得られないだけでなく、
セラミックス回路基板とした場合の信頼性の低下が著し
くなり、一般的な信頼性評価であるヒートサイクル試験
(−40℃〜125℃)において、1000回以下でA
l回路剥離等が発生してしまう。好ましくは、0.1質
量%以下である。
BEST MODE FOR CARRYING OUT THE INVENTION The brazing filler metal according to the present invention has an oxygen content of 0.1.
It is a brazing material having a content of 5% by mass or less. If the content exceeds 0.5% by mass, not only is it not possible to obtain a good yield at a relatively low joining temperature at which a brazing defect is not generated when joining a ceramic substrate and a metal plate containing Al as a main component, but also,
When a ceramic circuit board is used, the reliability is significantly reduced. In a heat cycle test (−40 ° C. to 125 ° C.), which is a general reliability evaluation, A is reduced to 1,000 times or less.
One-circuit peeling occurs. Preferably, it is 0.1% by mass or less.

【0014】本発明のろう材において、Mgが0.05
質量%〜3質量%であることが好ましい。Mgの含有量
が0.05質量%より少ないと、セラミックス基板とろ
う材或いは金属板とろう材の接合界面での酸化物除去の
効果が低く、3質量%を越えると、理由は明らかではな
いが、接合性が悪化することがある。尚、Mgは接合の
妨害となる界面に存在する酸化物を除去してくれるだけ
ではなく、ろう材の低融点化にも寄与するものと考えら
れる。
In the brazing material of the present invention, Mg is 0.05
It is preferably from 3% by mass to 3% by mass. If the Mg content is less than 0.05% by mass, the effect of removing oxides at the bonding interface between the ceramic substrate and the brazing material or the metal plate and the brazing material is low, and if it exceeds 3% by mass, the reason is not clear. However, the bondability may be deteriorated. It is considered that Mg not only removes the oxide present at the interface that hinders the joining, but also contributes to lowering the melting point of the brazing material.

【0015】一方、セラミックス基板とAlを主成分と
する金属板とを接合する際、接合温度が高いと、部分溶
融の現象を呈したりしてろう接欠陥が発生しやすくなる
だけでなく、接合後の残留応力が大きくなるため、ろう
材を低融点化することが重要である。そのために、本発
明のろう材はCu、Si、Geからなる群の少なくとも
1種以上の元素を含むAlであることが好ましい。尚、
Cu、Si、Geはいずれも単独であってもろう材合金
の低融点化に寄与するが、これらを複数組み合わせて用
いることもできる。更に、本発明のろう材の不純物とし
て、その量が本発明の目的を損なわない限り、含有され
ていても構わず、前記不純物の代表としてはFe、M
n、Zn、V、Ti、Cr、Ni等が挙げられる。
On the other hand, when a ceramic substrate and a metal plate containing Al as a main component are joined together, if the joining temperature is high, not only the phenomenon of partial melting is likely to occur, but also a soldering defect is liable to occur. It is important to lower the melting point of the brazing filler metal since the residual stress later increases. Therefore, the brazing material of the present invention is preferably Al containing at least one or more elements of the group consisting of Cu, Si, and Ge. still,
Even if Cu, Si, and Ge are used alone, they contribute to lowering the melting point of the brazing alloy, but a plurality of these can be used in combination. Further, as long as the amount of the impurities in the brazing material of the present invention does not impair the object of the present invention, it may be contained, and typical examples of the impurities include Fe and M.
n, Zn, V, Ti, Cr, Ni and the like.

【0016】なお、前記ろう材を用いてAlを主成分と
する金属板とセラミックス基板とを接合(ろう接)する
場合、接合する面に105〜5×106Paの垂直力を付
加することが望ましい。
When a metal plate mainly composed of Al and a ceramic substrate are joined (brazed) using the brazing material, a vertical force of 10 5 to 5 × 10 6 Pa is applied to the joining surfaces. It is desirable.

【0017】本発明のろう材の形態は、箔状、粉末状等
いずれの形態でも構わない。例えば、箔状とする場合
は、黒鉛-炭化ケイ素複合材のルツボにアルミニウムだ
けを溶融させ、そこに所定量の金属を添加し、充分撹拌
溶解する。含有酸素量が多い場合等は必要に応じてフラ
ックスを添加、充分撹拌して鉱滓等を除去後、溶解した
ろう材を型に流し込み冷却固化させる。その後、圧延機
を通して徐々に箔化すれば良い。
The form of the brazing material of the present invention may be any form such as a foil form or a powder form. For example, in the case of a foil shape, only aluminum is melted in a graphite-silicon carbide composite crucible, a predetermined amount of metal is added thereto, and sufficiently stirred and dissolved. When the content of oxygen is large, etc., a flux is added if necessary, and the mixture is sufficiently stirred to remove slag and the like, and then the dissolved brazing material is poured into a mold and solidified by cooling. Then, it may be gradually formed into a foil through a rolling mill.

【0018】本発明のろう材を用いて、セラミックス基
板とAlを主成分とする回路用或いは放熱用の金属板と
を接合する際は、前記箔をそのまま用いてもよいし、所
望組成の金属粉体を有機溶媒に分散してスラリーペース
トとする方法でも構わない。
When the ceramic substrate is joined to a circuit or heat dissipating metal plate mainly composed of Al using the brazing material of the present invention, the foil may be used as it is, or a metal having a desired composition may be used. A method in which the powder is dispersed in an organic solvent to form a slurry paste may be used.

【0019】ペースト法を用いる際には、金属粉体は有
機バインダーや有機溶剤と混合して用いられる。有機バ
インダーとしてはアクリル系のポリマー等、溶剤として
はイソホロンやテレピネオール等が代表的な例である。
粉体を構成する粒子の大きさについては、接合性を考慮
すると細かいほどよいが、粉体表面の空気等による酸化
等に因る酸素量の増加をできるだけさけるために、最大
粒子径が44μm以下、平均径が数μm〜20μm程度
であることが好ましい。また、粉体は、各金属単体の混
合粉体であってもよいが、Mgについては単独では、非
常に酸化され易く取り扱いが難しいので、Al等の合金
粉体として用いることが好ましい。
When using the paste method, the metal powder is used by being mixed with an organic binder or an organic solvent. Typical examples of the organic binder include acrylic polymers, and examples of the solvent include isophorone and terpineol.
As for the size of the particles constituting the powder, the finer the better, in consideration of the bondability, but in order to minimize the increase in the amount of oxygen due to oxidation of the powder surface by air or the like, the maximum particle size should be 44 μm or less. It is preferable that the average diameter is about several μm to 20 μm. Further, the powder may be a mixed powder of each metal alone, but Mg alone is very easily oxidized and difficult to handle. Therefore, it is preferable to use Mg as an alloy powder of Al or the like.

【0020】本発明に用いるセラミックス基板として
は、電気絶縁性で熱伝導性に富むものならばどの様なも
のでも構わず、例えば、アルミナ(Al23)やベリリ
ア(BeO)を添加した炭化珪素(SiC)、窒化珪素
(Si34)、窒化アルミニウム(AlN)等を挙げる
ことができる。これらの内では、電力が大きなパワーデ
バイスで熱の発生が大きいことを考慮すると、絶縁耐圧
が高く、熱伝導性の高い窒化アルミニウム基板、窒化珪
素、ベリリアを添加した炭化珪素基板が好適である。ま
た、汎用用途向けには、アルミナ基板が安価であり、好
ましい。
As the ceramic substrate used in the present invention, any substrate may be used as long as it is electrically insulating and has high thermal conductivity. For example, a carbonized substrate to which alumina (Al 2 O 3 ) or beryllia (BeO) is added is used. Silicon (SiC), silicon nitride (Si 3 N 4 ), aluminum nitride (AlN), and the like can be given. Among these, considering that a large power device generates a large amount of heat, an aluminum nitride substrate having a high withstand voltage and a high thermal conductivity, a silicon carbide substrate to which silicon nitride and beryllium are added are preferable. For general-purpose applications, an alumina substrate is inexpensive and is preferred.

【0021】本発明の回路基板は、アルミニウムを主成
分とする金属板と窒化アルミニウム基板等のセラミック
ス基板とを前記ろう材を用いて加熱接合した後、エッチ
ングする方法、或いは、金属板から打ち抜き法等により
予め回路パターンを形成し、これをセラミックス基板に
前記ろう材を用いて接合する方法等によって製造するこ
とができる。
The circuit board of the present invention may be formed by heating a metal plate containing aluminum as a main component and a ceramic substrate such as an aluminum nitride substrate by using the brazing material and then etching the metal plate, or by punching the metal plate. For example, a circuit pattern can be formed in advance by, for example, a method in which the circuit pattern is joined to a ceramic substrate using the brazing material.

【0022】[0022]

【実施例】〔実施例1〜9、比較例1〜2〕セラミック
ス基板として、50mm×50mm×0.635mmの
窒化アルミニウム基板を用意した。特性は、レーザーフ
ラッシュ法による熱伝導率が175W/mKで、3点曲
げ強さの平均値が420MPaであった。また、アルミ
ニウムを主成分とする金属板として厚さ0.4mmのJ
IS呼称1085材を用いた。
[Examples 1 to 9 and Comparative Examples 1 and 2] As a ceramic substrate, an aluminum nitride substrate of 50 mm × 50 mm × 0.635 mm was prepared. As for the characteristics, the thermal conductivity by the laser flash method was 175 W / mK, and the average value of the three-point bending strength was 420 MPa. A 0.4 mm thick J
IS designation 1085 material was used.

【0023】また、表1に示すろう材を、黒鉛-炭化ケ
イ素複合材のルツボにアルミニウムだけを溶融させ、そ
こに所定量の金属を添加し、充分撹拌溶解し、必要に応
じてフラックスを添加、充分撹拌して、鉱滓等を除去
後、溶解したろう材を型に流し込み冷却固化させて合金
化した。合金箔はロール圧延機での圧延とアニールを繰
り返して徐々に所望厚さに箔化し、また、合金粉はアト
マイズ装置を用いて調整した。作製したろう材の組成は
蛍光X線法(化学分析で校正した)にて、またろう材中
の酸素量は、LECO社のO/N同時分析装置で定量評
価を行った。
Further, the brazing material shown in Table 1 was melted by melting only aluminum in a crucible of a graphite-silicon carbide composite material, a predetermined amount of metal was added thereto, sufficiently stirred and dissolved, and a flux was added as necessary. After sufficiently stirring to remove slag and the like, the melted brazing material was poured into a mold and cooled and solidified to form an alloy. The alloy foil was gradually formed into a desired thickness by repeating rolling and annealing in a roll rolling mill, and the alloy powder was adjusted using an atomizing device. The composition of the produced brazing material was evaluated by an X-ray fluorescence method (calibrated by chemical analysis), and the amount of oxygen in the brazing material was quantitatively evaluated by an O / N simultaneous analyzer of LECO.

【0024】前記セラミックス基板の表裏両面に、表1
に示す各種組成のろう材を介して、前記アルミニウム板
を重ね、垂直方向に3.5×106Paで加圧した。そ
して、1.33×10-2Paの真空中、温度600℃の
条件下で加圧しながらアルミニウム板と窒化アルミニウ
ム基板とをろう接して、各50枚の接合体を得た。
On both sides of the ceramic substrate, Table 1
The aluminum plates were stacked via a brazing filler metal having various compositions shown in (1) and pressure was applied at 3.5 × 10 6 Pa in the vertical direction. Then, the aluminum plate and the aluminum nitride substrate were soldered to each other under pressure of 600 ° C. in a vacuum of 1.33 × 10 −2 Pa to obtain 50 bonded bodies.

【0025】[0025]

【表1】 [Table 1]

【0026】前記接合体については、目視及び超音波探
傷による接合状態の確認を行った。さらに、異常の認め
られなかった接合体について、アルミニウム板表面の所
望部分にエッチングレジストをスクリーン印刷して、塩
化第二鉄溶液にてエッチング処理し、回路パターンを形
成した。次いで、レジストを剥離した後、無電解Ni−
Pメッキを3μm厚さで施してセラミックス回路基板と
した。得られたセラミックス回路基板について、次ぎに
示すように信頼性の評価を行った。
With respect to the joined body, the joined state was confirmed visually and by ultrasonic flaw detection. Further, with respect to the joined body in which no abnormality was observed, an etching resist was screen-printed on a desired portion of the aluminum plate surface and etched with a ferric chloride solution to form a circuit pattern. Next, after removing the resist, the electroless Ni-
P plating was applied to a thickness of 3 μm to obtain a ceramic circuit board. The reliability of the obtained ceramic circuit board was evaluated as shown below.

【0027】<信頼性評価試験>セラミックス回路基板
に−40℃×20分〜室温×10分〜125℃×20分
〜室温×10分を1サイクルとするヒートサイクルを3
000回負荷した。その後、セラミックス回路基板につ
いて、目視及び超音波探傷による回路の剥離やセラミッ
クス基板におけるクラック発生状況等の異常の有無を観
察した。結果を表2に示す。
<Reliability Evaluation Test> A heat cycle of -40 ° C. × 20 minutes to room temperature × 10 minutes to 125 ° C. × 20 minutes to room temperature × 10 minutes was applied to the ceramic circuit board for three cycles.
Loaded 000 times. Thereafter, the ceramic circuit board was visually and visually inspected for abnormalities such as peeling of the circuit by ultrasonic flaw detection and occurrence of cracks in the ceramic board. Table 2 shows the results.

【0028】[0028]

【表2】 [Table 2]

【0029】表2から、本発明のセラミックス回路基板
は、いずれも回路材とセラミックス基板とが良好な接合
状態であり、ヒートサイクル3000回負荷後であって
も回路材の剥離やセラミックス基板のクラック等の異常
は認められず、高信頼性の回路基板であることが明らか
である。
From Table 2, it can be seen that the ceramic circuit board of the present invention has a good bonding state between the circuit material and the ceramic substrate, peeling of the circuit material and cracking of the ceramic substrate even after a heat cycle of 3000 times. No abnormalities such as the above are recognized, and it is clear that the circuit board has high reliability.

【0030】[0030]

【発明の効果】本発明のろう材は、酸素量が0.5質量
%以下に制御されているので、ろう接の際に接合を阻害
するような物質が少なく、その結果、セラミックス基板
とアルミニウムを主成分とする金属板とを良好に接合す
ることができるという特徴を有する。また、本発明のろ
う材は、Mgを、更にCu、Si、Geのうちの少なく
とも一種以上を含むことから、セラミックス基板とアル
ミニウムを主成分とする金属板とを比較的低温で、より
一層良好に接合することができるという特徴を有するの
で、得られるセラミックス回路基板に残留する熱応力を
低くでき、その結果、熱サイクルにも耐久性のある高信
頼性のセラミックス回路基板を容易に得ることができ
る。
According to the brazing material of the present invention, since the oxygen content is controlled to 0.5% by mass or less, there are few substances which hinder the joining at the time of brazing. And a metal plate mainly composed of: Further, since the brazing material of the present invention further contains Mg and at least one of Cu, Si, and Ge, the ceramic substrate and the metal plate containing aluminum as a main component are more preferably formed at a relatively low temperature. It has the characteristic that it can be bonded to a ceramic circuit board, so that the thermal stress remaining on the resulting ceramic circuit board can be reduced, and as a result, a highly reliable ceramic circuit board that is durable to thermal cycling can be easily obtained. it can.

【0031】本発明のセラミックス回路基板は、前記ろ
う材を介して、セラミックス基板とアルミニウムを主成
分とする金属板からなる回路とが良好に接合していて、
残留している熱応力も低いので、繰り返しの熱サイクル
に耐久性のある高信頼性のセラミックス回路基板であ
り、産業上非常に有用である。
In the ceramic circuit board of the present invention, the ceramic board and the circuit composed of a metal plate containing aluminum as a main component are satisfactorily joined via the brazing material.
Since the residual thermal stress is low, it is a highly reliable ceramic circuit board that is durable to repeated thermal cycles, and is very useful in industry.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊吹山 正浩 東京都町田市旭町3丁目5番1号 電気化 学工業株式会社中央研究所内 Fターム(参考) 4E351 AA08 AA09 AA10 AA11 AA12 BB01 BB30 CC18 CC19 DD04 DD10 DD21 DD52 EE01 EE13 EE24 GG03 GG04 5E338 AA18 BB71 CC04 CC08 EE02 EE27 EE28 EE33  ────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Masahiro Ibukiyama 3-5-1 Asahimachi, Machida-shi, Tokyo Denki Kagaku Kogyo Co., Ltd. F-term (reference) 4E351 AA08 AA09 AA10 AA11 AA12 BB01 BB30 CC18 CC19 DD04 DD10 DD21 DD52 EE01 EE13 EE24 GG03 GG04 5E338 AA18 BB71 CC04 CC08 EE02 EE27 EE28 EE33

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】セラミックス基板とAlを主成分とする金
属板とを接合するろう材であって、酸素量が0.5質量
%以下であることを特徴とするろう材。
1. A brazing material for joining a ceramic substrate and a metal plate containing Al as a main component, wherein the amount of oxygen is 0.5% by mass or less.
【請求項2】前記ろう材が、Mgが0.05質量%以上
3質量%以下含有することを特徴とする請求項1記載の
ろう材。
2. The brazing material according to claim 1, wherein said brazing material contains 0.05% by mass or more and 3% by mass or less of Mg.
【請求項3】前記ろう材が、Cu、Si、Geのうちの
少なくとも一種以上を含むAlであること特徴とする請
求項1又は請求項2記載のろう材。
3. The brazing material according to claim 1, wherein said brazing material is Al containing at least one of Cu, Si, and Ge.
【請求項4】Alを主成分とする金属板を、請求項1、
請求項2又は請求項3記載のろう材を介して、窒化アル
ミニウム、窒化珪素、炭化珪素、アルミナからなる群よ
り選ばれた一種以上のセラミックス基板に接合してなる
ことを特徴とするセラミックス回路基板。
4. A metal plate containing Al as a main component,
A ceramic circuit board which is bonded to at least one ceramic substrate selected from the group consisting of aluminum nitride, silicon nitride, silicon carbide, and alumina via the brazing material according to claim 2 or 3. .
JP29938699A 1999-10-21 1999-10-21 BRAZING FILLER METAL FOR Al SERIES METAL AND CERAMICS CIRCUIT BOARD USING THE SAME Pending JP2001121287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29938699A JP2001121287A (en) 1999-10-21 1999-10-21 BRAZING FILLER METAL FOR Al SERIES METAL AND CERAMICS CIRCUIT BOARD USING THE SAME

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29938699A JP2001121287A (en) 1999-10-21 1999-10-21 BRAZING FILLER METAL FOR Al SERIES METAL AND CERAMICS CIRCUIT BOARD USING THE SAME

Publications (1)

Publication Number Publication Date
JP2001121287A true JP2001121287A (en) 2001-05-08

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ID=17871896

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Country Status (1)

Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1450401A1 (en) * 2001-11-29 2004-08-25 Denki Kagaku Kogyo Kabushiki Kaisha Module structure and module comprising it
WO2013146881A1 (en) * 2012-03-29 2013-10-03 三菱マテリアル株式会社 Substrate for power module and manufacturing method therefor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1450401A1 (en) * 2001-11-29 2004-08-25 Denki Kagaku Kogyo Kabushiki Kaisha Module structure and module comprising it
EP1450401A4 (en) * 2001-11-29 2007-12-05 Denki Kagaku Kogyo Kk Module structure and module comprising it
US7355853B2 (en) 2001-11-29 2008-04-08 Denki Kagaku Kogyo Kabushiki Kaisha Module structure and module comprising it
WO2013146881A1 (en) * 2012-03-29 2013-10-03 三菱マテリアル株式会社 Substrate for power module and manufacturing method therefor
JP2013207236A (en) * 2012-03-29 2013-10-07 Mitsubishi Materials Corp Power module substrate and manufacturing method thereof
CN104170077A (en) * 2012-03-29 2014-11-26 三菱综合材料株式会社 Substrate for power module and manufacturing method therefor
US9862045B2 (en) 2012-03-29 2018-01-09 Mitsubishi Materials Corporation Power-module substrate and manufacturing method thereof

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