JP2000204469A - Member for film forming device, film forming device, film formation and film-formed substrate for magnetic head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively prevent the peeling of a film of film forming components deposited onto a member and to form a film high in quality by depositing the same metal as metallic components composing the film forming components on the part of the surface at least to be deposited with film forming components in a member existing in a film forming chamber of a film forming device. SOLUTION: A substrate 3 is placed on a substrate holder 2 arranged in a film forming chamber, a target 4 of aluminum or the like joined to a backing plate 5 of copper or the like is arranged oppositely to the substrate 3, and a shutter 6 is provided between them. In this film forming chamber, plasma is generated to sputter the target 4, the produced aluminum particles or the like is reacted with oxygen, nitrogen or the like introduced from a feed pipe 9, the reaction product is deposited on the substrate 3 to form a film. The surface of a member such as a deposition preventing board 1 in the film forming chamber is coated with metallic components of film forming components to a thickness of 5 to 25 μm by plasma thermal spraying or the like, and the surface roughness Ra is controlled to <=50 μm, preferably to 5 to 25 μm. In this way, the deposited film is hardly peeled off without generating abnormal discharge.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus useful for manufacturing a film forming substrate used for a magnetic head for a magnetic disk or a magnetic head for a magnetic tape applied to a storage device such as a computer. Members, film forming equipment,
The present invention relates to a film forming method and a substrate for a magnetic head formed by the member, the device, and the method.

[0002]

2. Description of the Related Art When manufacturing a film forming substrate used for a magnetic head for a magnetic disk or a magnetic head for a magnetic tape applied to a storage device such as a computer, a film forming component is formed in a film forming chamber of the film forming apparatus. It is known that a film is formed by adhering to a member or the like existing in a film, and this film causes peeling and contaminates a film-formed substrate. This problem greatly affects the quality and yield of the film formation substrate.

As a method for solving this problem, a method has conventionally been adopted in which the surface of a member or the like is subjected to a blasting treatment so that the surface has a matte finish to increase the film adhesion strength. Furthermore, a method for preventing the peeling of the adhered film by applying aluminum or molybdenum as a metal having a high film adhesion strength to the surface of the member or the like and setting the surface roughness (Ra) to 200 μm or more (Japanese Patent Laid-Open No.
Japanese Patent Application Laid-Open No. 1-56277), a method in which aluminum is sprayed on a specific member to prevent the adhered film from peeling (see Japanese Patent Application Laid-Open No. 4-26865). A method has been proposed in which aluminum is sprayed to control the surface shape of the aluminum layer to prevent the adhered film from peeling (see JP-A-8-176816).

[0004]

However, the metal sprayed on the surface of a member or the like in these proposals is mainly used only for the magnitude of the film adhesion strength, and is used in consideration of the film forming components. It was not done. In addition, Japanese Patent Application Laid-Open No. 61-56277 discloses a 20
With a surface roughness (Ra) of 0 μm or more, there is a problem that an abnormal discharge easily occurs in the apparatus due to being too rough, and it is difficult to form a film having a uniform thickness. Therefore, in the present invention, a member for a film forming apparatus, a film forming apparatus, a film forming method, and a film forming method which have more excellent effects than the methods proposed to prevent peeling of a film attached to a member or the like have been proposed so far. It is an object to provide a magnetic head substrate having a film formed thereon.

[0005]

Means for Solving the Problems As a result of various studies, the present inventors have found that a film is formed at least on a portion of a member existing in a film forming chamber of a film forming apparatus where a film forming component adheres. If the same metal as the metal component constituting the component is applied, the thermal expansion coefficients of the two are similar, so that separation of the adhered film can be effectively prevented. It has been found that by setting the roughness (Ra) to a specific value, the peeling of the adhered film can be effectively prevented, and the replacement time of the member can be extended.

The present invention has been made based on such knowledge, and a member for a film forming apparatus according to the present invention is a member existing in a film forming chamber of a film forming apparatus. At least a portion of the surface of the member to which the film forming component adheres is coated with the same metal as the metal component constituting the film forming component. The member for a film forming apparatus according to claim 2 is a member that is present in a film forming chamber of the film forming apparatus, and has a surface roughness (Ra) at least on a surface of the member where a film forming component is attached. ) Is 50 μm or less. The member for a film forming apparatus according to claim 3 is a member existing in a film forming chamber of the film forming apparatus,
The same metal as the metal component constituting the film-forming component is applied to at least a portion of the surface of the member where the film-forming component adheres so that the surface roughness (Ra) becomes 50 μm or less. I do. The member for a film forming apparatus according to claim 4 is
4. The member for a film forming apparatus according to claim 2, wherein the surface roughness (Ra) is 5 μm to 25 μm. The member for a film forming apparatus according to claim 5 is the member for a film forming apparatus according to any one of claims 1 to 4,
The metal is aluminum. The member for a film forming apparatus according to claim 6 is a member for a film forming apparatus.
5. The member for a film forming apparatus according to any one of the above, wherein the member is a substrate holder in a sputtering apparatus. A member for a film forming apparatus according to a seventh aspect is the member for a film forming apparatus according to the sixth aspect, wherein the material forming the substrate holder is copper. The member for a film forming apparatus according to claim 8 is the member for a film forming apparatus according to any one of claims 1 to 7, wherein the member is a member for a film forming apparatus for a substrate for a magnetic head. And According to a ninth aspect of the present invention, there is provided a film forming apparatus including the member for a film forming apparatus according to any one of the first to eighth aspects. According to a tenth aspect of the present invention, there is provided a method for forming an aluminum oxide thin film, wherein a film is formed using the film forming apparatus according to the ninth aspect. A method for forming an aluminum nitride thin film according to the present invention is described in claim 11.
As described above, a film is formed using the film forming apparatus according to claim 9. According to a twelfth aspect of the present invention, a substrate for a magnetic head is formed by using the film forming apparatus according to the ninth aspect.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of a film forming apparatus to which the present invention is applied include a sputtering apparatus and a CVD (Chemic).
al Vapor Deposition) device. The member existing in the film forming chamber of the film forming apparatus is not particularly limited as long as there is a possibility that a film forming component may adhere to the surface thereof. Examples include a plate, a substrate holder, and a shutter. These may be fixed or detachable. Further, the present invention can also be applied to the inner surface of a deposition chamber of a deposition apparatus which cannot be detached.

In the present invention, the same metal as the metal component constituting the film-forming component is selected in consideration of the coefficient of thermal expansion of the film-forming component. For example, in an apparatus for forming an aluminum oxide thin film or an aluminum nitride thin film, when aluminum is applied, peeling of the aluminum oxide film or the aluminum nitride film attached to the member can be effectively prevented.

The material (base material) constituting the member is not particularly limited, and may be stainless steel, copper, aluminum,
Although molybdenum, titanium, or the like is used, it is desirable that the substrate holder be made of copper having good thermal conductivity from the viewpoint of easy temperature control of the substrate.

As a method for applying a metal to a member, for example, a method using thermal spray coating can be mentioned. The metal is preferably applied so that the surface roughness (Ra) is 50 μm or less. If the surface roughness (Ra) is larger than 50 μm, abnormal discharge is likely to occur in the film forming apparatus, and it may be difficult to form a film having a uniform thickness. Further, it is more preferable to apply the metal so that the surface roughness (Ra) is 25 μm or less, since the replacement time of members (the number of batches that can be formed by one replacement) can be extended. The lower limit of the surface roughness (Ra) also depends on the limit of the deposition technique, but in the case of thermal spray coating, 5 μm is a tentative lower limit. The coating thickness is desirably 100 μm or more from the viewpoint that the coating is applied so that the surface roughness (Ra) becomes 50 μm or less. Hereinafter, the present invention will be described in detail with reference to the drawings and embodiments.

[0011]

(Embodiment 1) FIG. 1 is a schematic view of a film forming apparatus according to Embodiment 1 of the present invention, which is applied to a sputtering apparatus for forming an aluminum oxide thin film or an aluminum nitride thin film on a substrate. . Inside the film forming apparatus 11, a substrate 3 to be processed and a substrate holder 2 for holding the substrate are provided.
And a target 4 for emitting sputtered atoms and a backing plate (electrode) 5 for fixing the target are mounted facing each other. This backing plate 5
It is connected to a power supply 8 via a matching box 7 for converting AC to DC. Between the substrate 3 and the target 4, a shutter 6 for opening and closing a shutter 6 for preventing sputtered atoms from reaching the substrate during a pre-sputtering step for cleaning the surface of the target 4 is provided. At the periphery of the substrate holder 2, around the backing plate 5, and on the inner wall of the apparatus, a deposition-preventing plate 1 for preventing contamination inside the apparatus by sputtered particles is attached. A supply pipe 9 for supplying a gas such as argon to the inside is provided on one side of the film forming apparatus 11, and an exhaust pipe 10 for exhausting the gas is provided on the other side.
Is provided. The base material of the attachment-preventing plate 1 is aluminum, the base material of the substrate holder 2 is copper, and the base material of the shutter 6 is molybdenum, which are removable. In the portion where these film forming components adhere, aluminum has a surface roughness (Ra) 1.
The thermal spray coating is 3 μm and the coating thickness is 180 μm.

An outline of a film forming process using the above sputtering apparatus will be described. As a first step, the shutter 6 is opened,
A voltage is applied to the substrate side to perform sputtering, and the substrate 3,
The substrate holder 2 and the protection plate 1 around it are cleaned (etching step). As a second step, the shutter 6 is closed, a voltage is applied to the target side to perform sputtering, and the target 4 is cleaned (pre-sputtering step). As a third step, an argon gas is introduced into the apparatus to cool the inside (cooling step). As a final step, the shutter 6 is opened, a voltage is applied to both the target side and the substrate side to perform sputtering, and a film is formed on the substrate (bias sputtering / main sputtering).

(Experimental Example 1) Effect of Surface Roughness (Ra) of Metal Adhered to Member on Film Quality Deposition plate 1, substrate holder 2 and shutter 6 (hereinafter referred to as these) of the sputtering apparatus shown in FIG. Are collectively referred to as members), and are spray-coated with aluminum so as to have various surface roughnesses (Ra) (coating thickness: 200).
An aluminum oxide thin film was formed on a magnetic head substrate under the conditions of a sputtering power of 6 kW, a bias voltage of 100 V, a sputtering Ar pressure of 1 × 10 ⁻³ torr, and a sputtering film formation rate of 40 nm / min. The size of the obtained film defect on the film-formed substrate was visually evaluated using a check light (He, Ne light: a visual check can be made up to a film defect of 10 μm), and the size was classified as follows. Film defect of 100 μm or less: 1 point Film defect of more than 100 μm and 300 μm or less: 5 points Film defect of more than 300 μm: 10 points X is the total point of film defects per 100 cm ^{2 of the} substrate, and X is 10 If it was within the points, it was regarded as good. Using the value of X, the film quality evaluation score of each substrate is obtained by the following equation 1, and the average score of the film quality evaluation scores of all the film formation substrates is calculated.
This was defined as the average score of film quality evaluation for each surface roughness (Ra). Film quality evaluation score = (10−X) × 100/10 Expression 1 The results are shown in FIG. As is clear from FIG. 2, when the surface of the member is spray-coated with aluminum, the film quality is improved as compared with the case where only blasting is performed, and especially when the surface roughness (Ra) is 13 μm, The average score of the quality evaluation is almost 100 points (that is, no defect), and the surface roughness (R
Excellent results were obtained when a) was 5 μm to 50 μm.

(Experimental Example 2) Relationship between Surface Roughness (Ra) of Metal Adhered to Member and Replacement Time of Member Next, for a member having a surface roughness (Ra) of 13 μm in Experimental Example 1, one example was described. The number of batches that can be formed by changing the number of times was examined from the average score of the film quality evaluation. The results are shown in FIG. As is clear from FIG. 3, when the surface of the member is simply blasted, the rate of occurrence of film defects is unpredictable, and it is difficult to predict the replacement time of the member. When the surface roughness (Ra) of the surface was set to 13 μm, the film quality evaluation average score was almost 100 points. Further, with respect to the other members having the surface roughness (Ra) in Experimental Example 1, relative evaluation was performed with the average film quality evaluation score of the 30th batch of the member having the surface roughness (Ra) of 13 μm as 100. Was. FIG. 4 shows the results. As is clear from FIG. 4, it was found that when the surface roughness (Ra) was 5 μm to 25 μm, an excellent effect was also obtained in extending the replacement time of the members.

[0015]

According to the present invention, the same metal as the metal component constituting the film forming component is deposited on at least the portion of the surface of the member existing in the film forming chamber of the film forming apparatus where the film forming component adheres. Since the thermal expansion coefficients are similar to each other, peeling of the adhered film can be effectively prevented, and the surface roughness (Ra) of the deposited metal is set to a specific value. Accordingly, the detachment of the adhered film can be effectively prevented, and the replacement time of the member can be extended.

[Brief description of the drawings]

FIG. 1 is a view schematically showing a film forming apparatus according to the present invention.

FIG. 2 is a diagram showing a relationship between surface roughness (Ra) of a metal adhered to a member and film quality.

FIG. 3 is a diagram showing a relationship between a member having a surface roughness (Ra) of 13 μm and a replacement time.

FIG. 4 is a diagram showing the relationship between the surface roughness (Ra) of a metal adhered to a member and the replacement time of the member.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Deposition plate 2 Substrate holder 3 Substrate 4 Target 5 Backing plate 6 Shutter 7 Matching box 8 Power supply 9 Supply pipe 10 Exhaust pipe 11 Film forming apparatus

Continued on the front page (72) Inventor Kazutomo Shimizu 2-15-17 Egawa, Shimamoto-cho, Mishima-gun, Osaka Prefecture F-term in Yamazaki Works, Sumitomo Special Metals Co., Ltd. 4K029 AA02 BA44 BA58 BD00 BD04 CA05 DA09 DA10 DA12 FA09 JA01 5D093 FA16 HA17

Claims (12)

[Claims] 1. A member existing in a film forming chamber of a film forming apparatus, wherein at least a portion of a surface of the member to which a film forming component adheres is coated with the same metal as a metal component constituting the film forming component. A member for a film forming apparatus, wherein the member is attached. 2. A metal member which is present in a film forming chamber of a film forming apparatus and has a surface roughness (Ra) of 50 μm or less at least on a surface of the member to which a film forming component adheres. A member for a film forming apparatus, comprising: 3. A member present in a film forming chamber of a film forming apparatus, wherein at least a portion of the surface of the member to which the film forming component adheres is coated with the same metal as the metal component constituting the film forming component.
A member for a film forming apparatus, wherein the member is applied so that the surface roughness (Ra) is 50 μm or less. 4. The surface roughness (Ra) is 5 μm to 25 μm.
4. The member for a film forming apparatus according to claim 2, wherein: 5. The member for a film forming apparatus according to claim 1, wherein the metal is aluminum. 6. The member for a film forming apparatus according to claim 1, wherein said member is a substrate holder in a sputtering apparatus. 7. The member for a film forming apparatus according to claim 6, wherein a material forming said substrate holder is copper. 8. The member for a film forming apparatus according to claim 1, wherein the member is a member for a film forming apparatus for a substrate for a magnetic head. 9. A film forming apparatus comprising the film forming apparatus member according to claim 1. Description: 10. A method for forming an aluminum oxide thin film, comprising forming a film using the film forming apparatus according to claim 9. 11. A method for forming an aluminum nitride thin film using the film forming apparatus according to claim 9. 12. A magnetic head substrate formed by using the film forming apparatus according to claim 9.