JP2000114148A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable high accuracy in alignment between a mask and a wafer in X-ray lithography. SOLUTION: Wafermarks 9 prepared on a wafer 8 are composed of a substance that generates light emission 1, such as fluorescence by irradiation with soft X-ray 3 in an X-ray aligner that transfers a circuit pattern formed on a transfer pattern region 4a of an X-ray mask 4 onto the wafer 8, by irradiating the wafer 8 with the soft X-ray 3 which has passed through the X-ray mask 4 through an image-forming optical system which comprises reflecting mirrors 6 and 7. The soft X-ray 3, reflected by the alignment mark pattern 5 on the X-ray mask 4, is converged to form an image which is irradiated onto the wafer marks 9 on the wafer 8, and the light emission 1 such as fluorescence generated at this moment is detected by an optical detector 2, thereby enabling high accuracy of alignment between the X-ray mask 4 and the wafer 8.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor element, a liquid crystal element, and the like. And a technique effective when applied to a mask-wafer alignment method, a pattern position coordinate measuring method, and an apparatus therefor in X-ray lithography.

[0002]

2. Description of the Related Art A method of transferring a pattern drawn on a mask onto a sample substrate, which is called a lithography technique, is widely used for forming a pattern of a semiconductor integrated circuit or a liquid crystal element. Efforts have been made to shorten the exposure wavelength to achieve a high resolution and produce a highly integrated device. A specific light source is i-line 3 of a mercury lamp.
From 65 nm to 248 nm or 193 excimer laser
Lithography techniques using short-wavelength electromagnetic waves such as nm and X-rays have been actively studied. This X-ray lithography is being developed as a fine processing means capable of manufacturing future highly integrated LSIs under a high production capacity. As in the case of ordinary photolithography, it is possible to reduce an enlarged mask pattern. Projection method for printing on wafers
So-called reduced X-ray exposure has been proposed. In this case, it is necessary to position the mask and the wafer apart from each other with high accuracy. For this purpose, it is desirable to use the same X-ray and imaging optical system as the exposure system.

One of the specific methods is disclosed in
No. 3,126,41. In this method, reflected X-rays from a mask are focused on an alignment mark on a wafer through a projection optical system, and the reflected X-rays from the alignment mark are detected by reversing the reduced projection optical system and expanding. It is.

[0004]

In the reduced X-ray exposure technique, it is difficult to detect a signal from a wafer by the alignment method for detecting the reflected X-ray itself as in the above-mentioned prior art. The reason is that the wavelength of the X-ray used for exposure is about 4 to 20 nm, and the reflectance on the wafer is 1% or less, so that the detection of the reflected X-ray with high contrast from the alignment mark can be performed. Because it is difficult.

Therefore, it is conceivable to increase the reflectivity of X-rays by forming an alignment mark on a wafer using a multilayer film used as a material for the reflection portion of the X-ray mask. Complexity and LSI
There is a technical problem that it is not practical when the deterioration of the multilayer mark due to the processing process is considered.

As described above, in the alignment of the reduced X-ray exposure, the exposure X-ray and the image forming optical system are used.
Detecting a high-contrast signal from a wafer mark has been an issue.

An object of the present invention is to detect the position of a specific portion such as a wafer mark provided on a semiconductor wafer with high sensitivity, thereby detecting the position of the semiconductor wafer and aligning the exposure original with the semiconductor wafer. An object of the present invention is to provide a semiconductor device manufacturing technique that can be realized with high accuracy.

Another object of the present invention is to detect a high-contrast signal from a wafer mark on a semiconductor wafer by using an exposure X-ray and an image forming optical system in alignment of reduced X-ray exposure. Another object of the present invention is to provide a semiconductor device manufacturing technique capable of realizing, with high accuracy, position detection of a semiconductor wafer, alignment of an exposure original plate with a semiconductor wafer, and the like.

Another object of the present invention is to provide a semiconductor device manufacturing technique capable of improving the yield of semiconductor devices formed by photolithography using X-ray exposure.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0011]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

In the method of manufacturing a semiconductor device according to the present invention, the first
The position of the semiconductor wafer is detected by irradiating the light on the specific part on the semiconductor wafer and detecting the second light generated from the specific part.

Further, in the method of manufacturing a semiconductor device according to the present invention, in the method of manufacturing a semiconductor device in which the pattern of the exposure original is transferred to the semiconductor wafer by irradiating the semiconductor wafer with exposure light passing through the exposure original, By irradiating the first alignment mark provided with the first light and detecting the second light generated from the first alignment mark, the alignment between the semiconductor wafer and the exposure original is performed.

More specifically, as an example, in the present invention,
In the X-ray exposure, the position of the mark is measured by detecting the second light such as fluorescent light generated by irradiating the wafer mark with the X-ray as the first light.

Generally, when a solid such as silicon is irradiated with X-rays, light such as fluorescence is generated from the surface of the solid. Therefore,
If a mark is formed on the wafer with a semiconductor material or the like, the light emission efficiency changes at the step of the mark.
By detecting this light, the shape of the mark, that is, the coordinates of the mark can be measured. If the mark material is made of a different material from the surrounding material, the emission spectrum is different, so that it is needless to say that the measurement can be made easily.

When radiation having high energy such as X-rays is used as a light source, many substances emit light such as fluorescent X-rays and can be used as a mark material. In the case of fluorescent X-rays, an element having a higher atomic number is more preferable because of higher luminous efficiency.

Since a fluorescent substance has high luminous efficiency, it is suitable as a mark material. The exposure wavelength is not limited to X-rays, and a longer wavelength of 193 nm can be used sufficiently. Specifically, NaI: Tl, CsI: Tl, CaWO ₄ , Gd ₂ O ₂ S: Tb, BaFB
r: Eu, BaSi ₂ O ₅ : Pb, Sr ₂ P ₂ O ₇ : Eu, BaMg ₂ Al ₁₆ O ₂₇ : Eu, Mg
_{WO 4, 3Ca (PO 4)} 2 · Ca (F, Cl) 2: Sb, Mn, MgGa 2 O 4: Mn, Zn
₂ SiO ₄ : Mn, (Ce, Tb) MgAl ₁₁ O ₁₉ , Y ₂ O ₃ : Eu, Y ₂ SiO ₅ : Eu,
YVO ₄ : Eu, (Sr, Mg, Ba) ₃ (PO ₄ ) ₂ : Sn, 3.5MgO ・ 5MgF ₂・ Ge
O ₂ : Mn, ZnS: Cu, Y ₂ Si ₂ O ₅ : Ce, ZnS: Ag, ZnS: Mn, ZnS: Tb
F ₃ , ZnO: Zn, Zn ₂ SiO ₄ : Mn, As, ZnS: Cu, Al, ZnS: Cu, Au,
Al, (Zn, Cd) S : using an inorganic material containing an inorganic crystal or with impurity ions activator such as Eu: Cu, Al, ZnS: Ag + (Zn, Cd) S: Cu, Y 2 O 2 S be able to. Inorganic materials have the advantage of high heat resistance and durability.

In addition, aromatic hydrocarbon compounds such as benzene, naphthalene, anthracene, phenanthrene, naphthacene, benzanthracene, chrysene, triphenylene, pyrene, perylene, coronene, dibenzoanthracene, fluorene, biphenyl, terphenyl, and acenaphthene; Many organic compounds such as polyacetylene derivatives such as tetraacetylene and diphenylacetrene, and sodium salicylate can be used. In the case of an organic material, there is an advantage that the time resolution is high because the fluorescence lifetime is short.

In order to use these materials as wafer marks,
It can be manufactured by a method such as vapor deposition or ion implantation using a normal lithography process. Of course, dissolving or mixing in a solution of a polymer such as polystyrene, spin-coating and drying, producing a thin film such as a plastic solid solution, and producing a desired mark shape by a normal lithography process Is also possible. In this case, there is an advantage that it is simple because a large-scale vacuum device is not used.

As a photodetector for measuring light emission from a wafer mark, an ordinary photomultiplier or a photodiode can be used. If a linear diode array or a two-dimensional sensor is used, or if image processing technology is used, alignment can be performed with higher accuracy.

In the present invention, since light is detected,
A band-pass filter, low-pass filter, which eliminates noise components other than light required before the photodetector;
A filter such as a high-pass filter can be arranged. The emission from the wafer mark has an emission spectrum specific to the substance. Since other noise components can be removed by passing through a filter through which the wavelength band of the maximum intensity passes, there is an advantage that S / N is improved and detection can be performed with high accuracy.

Further, since light is detected, light emitted from a wafer mark can be captured using an optical fiber and guided to a photodetector. In this case, since only an optical fiber is introduced, it can be easily installed even in a small area,
The photodetector having a large occupied area can be installed outside the exposure apparatus main body, so that operability is improved and disturbance such as noise can be eliminated. Further, there is an advantage that the optical fiber can be easily installed in an angle region where the luminous efficiency is high.

[0023]

Embodiments of the present invention will be described below in detail with reference to the drawings.

The embodiments described below are merely examples of the present invention, and the present invention is not limited to these embodiments.

(Embodiment 1) FIG. 1 is a conceptual diagram showing an example of the configuration of an exposure apparatus for carrying out a method of manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. FIG. 3 is a plan view showing an example of the configuration of an X-ray mask used in the exposure apparatus of the present embodiment, and FIG. 3 is a plan view showing a part of a semiconductor wafer.

In the exposure apparatus of the present embodiment, an X-ray source (not shown) for generating soft X-rays 3, a reflective X-ray mask 4 as an exposure master, and a wafer 8 to be exposed are placed. Wafer stage 10 and soft X through X-ray mask 4
An imaging optical system including a reflecting mirror 6 and a reflecting mirror 7 for irradiating the wafer 8 with exposure light such as the line 3 at the same size or reduced size, and a specific portion of the wafer 8 by irradiation of the soft X-ray 3 A light detector 2 for detecting light. In addition, an aperture 11 is provided for selectively irradiating the soft X-ray 3 to a positioning mark pattern 5 of the X-ray mask 4 described later at the time of positioning.

As shown in FIG. 2, the X-ray mask 4 has a transfer pattern area 4a formed by enlarging or enlarging a desired circuit pattern at the same size or enlarged, and an alignment mark pattern 5. . In this embodiment, for the sake of simplicity, the case where the alignment mark pattern 5 is arranged outside the transfer pattern area 4a is illustrated, but the alignment mark pattern is arranged inside the transfer pattern area 4a. Needless to say, 5 may be arranged.

Here, the X-ray mask 4 is formed of a substrate made of quartz or a glass / ceramic material, and the reflection patterns such as the transfer pattern region 4a and the alignment mark pattern 5 are made of 3n of molybdenum and silicon on the substrate.
A multilayer film having a thickness of 20 nm and a thickness of 7 nm is used. Further, the same multilayer film as the reflection pattern of the X-ray mask 4 is formed on the reflection surfaces of the reflection mirror 6 and the reflection mirror 7 of the imaging optical system.

As shown in FIG. 3, the wafer 8 has an X
It comprises a plurality of element forming regions 8a to which the circuit pattern of the transfer pattern region 4a of the line mask 4 is transferred, and a wafer mark 9 arranged and formed in a scribe line region 8b at the boundary between the plurality of element forming regions 8a. A resist (not shown) that is sensitive to the soft X-ray 3 is applied to the element forming region 8a. In this embodiment, in order to make the description easy to understand, the wafer mark 9 is formed outside the element forming region 8a.
Is illustrated, but it is needless to say that the wafer mark 9 may be disposed inside the element forming region 8a.

In the case of the present embodiment, the wafer mark 9 is
A fluorescent substance such as BaSi ₂ O ₅ : Pb deposited on the wafer 8 to a thickness of 0.5 μm and patterned to a width of 0.2 μm by a usual lithography process was used.

That is, as illustrated in FIG. 4, a phosphor thin film 9a such as BaSi ₂ O ₅ : Pb is deposited on one main surface of the wafer 8 (FIG. 4A) to a thickness of 0.5 μm. (FIG. 4 (b))
Thereafter, a resist film 9b is applied (FIG. 4 (c)), and a resist pattern 9c is formed by exposing and developing the resist film 9b (FIG. 4 (d)). After the wafer mark 9 is formed in the etching process of the thin film 9a (FIG. 4E), the used resist pattern 9c is removed, and finally the wafer 9 is formed as shown in FIG. 8 on one main surface
The wafer mark 9 made of a fluorescent substance such as BaSi ₂ O ₅ : Pb can be selectively formed.

Hereinafter, an example of the operation of the present embodiment will be described.

First, by setting the aperture 11 as shown in FIG. 1, for example, the soft X-ray 3 having a wavelength of 13.5 nm is selectively irradiated to the alignment mark pattern 5 of the X-ray mask 4 and reflected. , Reflection mirrors 6 and 7 of the imaging optical system
And projected on a wafer mark 9 on the wafer 8.

In the case of the present embodiment, light emission 1 from wafer mark 9 generated by irradiation of soft X-ray 3 (first light)
(Second light) was light having a maximum intensity at 351 nm. The emission intensity was measured by the photodetector 2. While finely moving the wafer stage 10 in the horizontal direction or the like, a light emission signal from the wafer mark 9 is detected, and the position of the wafer stage 10 is controlled so that the detection signal is maximized.

After aligning the position of the X-ray mask 4 and the wafer 8 by the above-described method, the aperture 11 is retracted, and the soft X-ray 3 as exposure light is irradiated onto the transfer pattern area 4a of the X-ray mask 4. X-ray exposure by reducing or equal-magnification projection onto the resist in the element forming area 8a on the wafer 8 via the imaging optical system including the reflecting mirrors 6 and 7, and further developing Then, the circuit pattern of the transfer pattern area 4a of the X-ray mask 4 was transferred to the element formation area 8a. As a result of measuring the overlay error between the resist pattern in the element formation region 8a of the wafer 8 formed by the X-ray exposure and the pattern on the wafer 8 used for alignment, the X direction was 0.028 μm (3σ), and the Y direction Is 0.026
μm (3σ) was obtained.

Instead of the wafer mark 9, a wafer mark 9 prepared by mixing Y ₂ SiO ₅ : Ce into a polystyrene solution, spin-coating, and finely processing a thin film formed by a drying process by a normal lithography process is used. Also obtained the same effect.

As described above, in the present embodiment,
A method of irradiating an X-ray to a pattern to be measured, detecting light emission such as fluorescence generated from the pattern, and measuring a position of the pattern is provided. When this method is used for alignment between the X-ray mask 4 and the wafer 8 in X-ray lithography, the same optical axis alignment using an exposure optical system such as an imaging optical system including the reflecting mirrors 6 and 7 becomes possible. At the same time, since a position detection signal having a high intensity and a high contrast is obtained from the wafer mark 9 as light emission 1 of fluorescence or the like by irradiation of the soft X-ray 3, for example, X reflected from the wafer mark 9
Compared with the case where the line itself is detected, the positioning accuracy is remarkably improved.

Further, it is not necessary to form a reflective film having a complicated multi-layer structure having more than a dozen layers as the wafer mark 9;
Since only a single layer pattern made of a fluorescent substance for the line is formed, the wafer process is not unnecessarily complicated.

As a result, the existing circuit pattern formed in the element formation region 8a of the wafer 8 and the circuit pattern formed by photolithography using the resist deposited thereon are formed without increasing the manufacturing cost. And the yield of semiconductor elements and the like formed in the element formation region 8a is reliably improved.

The light emission 1 generated from the wafer mark 9
May be detected by reversing an imaging optical system such as a reduction optical system including the reflecting mirrors 6 and 7 and expanding the imaging optical system.

(Embodiment 2) In Embodiment 2, the wavelength between the wafer mark 9 and the photodetector is the wavelength of the maximum intensity of the emission spectrum from the wafer mark 9 as illustrated in FIG. Except that a filter 12 through which light of 351 nm passes is provided, a method similar to that of the first embodiment is used.
This constitutes an X-ray reduction exposure optical system. As a result of measuring the overlay error in the case of the second embodiment, the X-direction is 0.
026 μm (3σ) and 0.024 μm (3σ) in the Y direction were obtained. According to this method, since the light of the noise component other than the light emission 1 generated from the wafer mark 9 by the irradiation of the soft X-ray 3 can be removed, the detection accuracy is improved by 20%.

In the case of the wafer mark 9 made of Y ₂ SiO ₅ : Ce, a similar effect was obtained by using a band-pass filter having a peak wavelength of 398 nm as the filter 12.

(Embodiment 3) FIG. 5 is a conceptual diagram showing an example of the configuration of an exposure apparatus for carrying out a method of manufacturing a semiconductor device according to another embodiment of the present invention, and FIG. FIG. 5 is a plan view showing an example of an X-ray mask used in the exposure apparatus of the embodiment.

In the case of the third embodiment, the transmission type X
The difference from the case of FIG. 1 lies in that the same-size exposure (proximity) using the line mask 20 is performed.

That is, as exemplified in FIGS. 5 and 6, the X-ray mask 20 according to the third embodiment has a frame 2 made of, for example, low-expansion glass having a thickness of about 5 mm.
1 supports an outer edge of a doughnut-shaped silicon substrate 22 having a thickness of about 600 to 2000 μm, and further has one main surface of the silicon substrate 22 having a thickness of about 1 to 2 μm made of SiC, SiN, or the like. forming a membrane 23 and the antireflection film 24, on the membrane 23 (anti-reflection film 24), a thickness of about _{0.3~0.5μm W-Ti, Ta 4 B} ,
The transfer pattern area 20a and the alignment mark pattern 26 are formed by a transmission pattern opened in the X-ray absorber 25 such as Ta.

In this embodiment, the case where the alignment mark pattern 26 is arranged outside the transfer pattern area 20a is illustrated for easy understanding of the description. It goes without saying that the alignment mark pattern 26 may be arranged.

As a device configuration, the light emission 1 generated from the wafer mark 9 via an optical fiber (not shown) is used.
May be guided to the photodetector 2. Further, a filter 12 may be provided on the optical path of the light emission 1 incident on the photodetector 2.

In the alignment, the aperture 11
Is set so that the alignment mark pattern 26 of the X-ray mask 20 is selectively irradiated with the soft X-ray 3.
Soft X-ray 3 transmitted through the alignment mark pattern 26
To the wafer mark 9 of the wafer 8 and
While finely moving the wafer stage 10 in the horizontal direction, the signal level of the light emission 1 generated from the wafer mark 9 is detected, and the position of the wafer stage 10 is controlled so that the detection signal is maximized.

After the alignment, the aperture 11 is retracted, and the entire transfer pattern area 20a of the X-ray mask 20 is irradiated with soft X-rays 3 as exposure light, and the transfer pattern area 20a is transmitted in a predetermined pattern. The pattern transfer is performed by exposing the resist applied to the element forming region 8a of the wafer 8 with the soft X-ray 3 thus formed.

Also in the case of the present embodiment, the same effects as those of the above-described first and second embodiments can be obtained in the so-called proximity exposure step using X-rays.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and can be variously modified without departing from the gist thereof. Needless to say, there is.

For example, in the above-described embodiment, the case of X-ray exposure has been described. However, the present invention is not limited to this. For example, an ArF excimer laser exposure apparatus is used instead of the reduction exposure apparatus, and an excimer laser is used as the first light. A similar effect can be obtained by using a substance such as sodium salicylate that generates the second light as the fluorescence by the irradiation of the excimer laser for the wafer mark.

[0053]

According to the method of manufacturing a semiconductor device of the present invention, the position of a specific portion such as a wafer mark provided on a semiconductor wafer is detected with high sensitivity, so that the position of the semiconductor wafer can be detected and the exposure original can be detected. The advantage is that the alignment with the semiconductor wafer can be realized with high accuracy.

In the alignment of the reduced X-ray exposure, a signal having a high contrast is detected from the wafer mark on the semiconductor wafer by using the exposure X-ray and the image forming optical system, thereby detecting the position of the semiconductor wafer. In addition, it is possible to obtain an effect that the alignment between the exposure master and the semiconductor wafer can be realized with high accuracy.

Further, the yield of semiconductor devices formed by photolithography using X-ray exposure can be improved.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram illustrating an example of a configuration of an exposure apparatus that performs a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a plan view showing an example of the configuration of an X-ray mask used in the exposure apparatus according to one embodiment of the present invention.

FIG. 3 is a plan view showing a part of a semiconductor wafer processed by the method for manufacturing a semiconductor device according to one embodiment of the present invention;

4A to 4F are cross-sectional views illustrating an example of a method of forming a wafer mark in a method of manufacturing a semiconductor device according to an embodiment of the present invention in the order of steps.

FIG. 5 is a conceptual diagram illustrating an example of a configuration of an exposure apparatus that performs a method of manufacturing a semiconductor device according to another embodiment of the present invention.

FIG. 6 is a plan view showing an example of an X-ray mask used in an exposure apparatus that performs the method of manufacturing a semiconductor device according to one embodiment of the present invention.

[Explanation of symbols]

Reference Signs List 1 Light emission from wafer mark (second light) 2 Photodetector 3 Soft X-ray (first light) 4 X-ray mask (exposure original) 4a Transfer pattern area 5 Alignment mark pattern (second alignment mark) 6) Reflecting mirror (imaging optical system) 7 Reflecting mirror (imaging optical system) 8 Wafer 8a Element formation area 8b Scribe line area 9 Wafer mark (second alignment mark) (specific portion) 9a Fluorescent substance thin film 9b Resist Film 9c Resist pattern 10 Wafer stage 11 Aperture 12 Filter 20 X-ray mask (exposure original) 20a Transfer pattern area 21 Frame 22 Silicon substrate 23 Membrane 24 Anti-reflection film 25 X-ray absorber 26 Alignment mark pattern

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Toshihiko Tanaka 1-280 Higashi-Koigabo, Kokubunji-shi, Tokyo F-term in Central Research Laboratory, Hitachi, Ltd. 5F046 EA14 EB01 ED01 FA02 FA08 FC10 GA04 GA14 GA18 GB01

Claims (9)

[Claims] 1. A semiconductor device comprising: irradiating a specific portion on a semiconductor wafer with a first light to detect a second light generated from the specific portion to detect a position of the semiconductor wafer. Device manufacturing method. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the first light has a wavelength of 0.7 to 200 nm, and the specific portion is irradiated with the first light to emit the second light. A method for manufacturing a semiconductor device, comprising a fluorescent substance that generates light as fluorescent light. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the second light is detected via a filter that selectively passes or reflects the second light. A method for manufacturing a semiconductor device. 4. A method for manufacturing a semiconductor device, wherein a pattern of an exposure master is transferred to the semiconductor wafer by irradiating the semiconductor wafer with exposure light having passed through the exposure master, wherein a first wafer provided on the semiconductor wafer is provided. Irradiating the first alignment mark with the first light to detect the second light generated from the first alignment mark, thereby performing alignment between the semiconductor wafer and the exposure original. Manufacturing method of a semiconductor device. 5. The method for manufacturing a semiconductor device according to claim 4, wherein the first light has a wavelength of 0.7 to 200 nm, and the first alignment mark provided on the semiconductor wafer is A method for manufacturing a semiconductor device, comprising: a fluorescent substance that generates the second light as fluorescent light by irradiation with a first light. 6. The method for manufacturing a semiconductor device according to claim 4, wherein the first light is transmitted through a second alignment mark provided on the exposure original plate, and then the first light is applied to the semiconductor wafer. A method of manufacturing a semiconductor device, comprising: irradiating the first alignment mark to align the exposure master with the semiconductor wafer. 7. The method for manufacturing a semiconductor device according to claim 4, wherein the first light is irradiated on the first alignment mark provided on the semiconductor wafer. Detecting the second light generated from the alignment mark, and performing alignment between the semiconductor wafer and the exposure master, and then using the first light as the exposure light, thereby performing the exposure. A method of manufacturing a semiconductor device, comprising transferring the pattern on an original onto the semiconductor wafer. 8. The method for manufacturing a semiconductor device according to claim 4, wherein the first light as the exposure light passing through the exposure master is exposed to the semiconductor light via an exposure optical system. A method of manufacturing a semiconductor device, wherein the pattern on the exposure original is transferred to the semiconductor wafer by reducing projection on the wafer. 9. The method for manufacturing a semiconductor device according to claim 4, wherein the second light is detected via a filter that selectively passes or reflects the second light. A method for manufacturing a semiconductor device, comprising: