JP2000104040A - Adhesive for die bonding and preparation of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an adhesive which does not cause cracks even in wafers having a thickness of not more than 300 μm and can be bonded to wafers over a wide range of temperature with small warpage in the thermocompression bonding of an adhesive to the back of a wafer and can effect die bonding with a simple apparatus, and a method for preparing semiconductor devices using this adhesive. SOLUTION: A die bonding adhesive comprises a thermoplastic polyimide resin having a glass transition temperature of not higher than 90 deg.C and a thermosetting resin, and a method for preparing a semiconductor device comprises thermocompressing a single-layer adhesive in the form of a film composed of a thermoplastic polyimide resin having a glass transition temperature of not higher than 90 deg.C and a thermosetting resin on to the back of the wafer to obtain a wafer 8 with an adhesive, applying and fixing the resulting wafer with an adhesive to a dicing tape 7, dividing and cutting the dicing tape-bonded wafer with an adhesive into an individual semiconductor element, then peeling the dicing tape, and die-bonding the resulting semiconductor element 8 with an adhesive to a substrate member.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a die bonding adhesive and a method for manufacturing a semiconductor device using the same.

[0002]

2. Description of the Related Art Conventionally, as a method of die-bonding a semiconductor element (joining a semiconductor element to a lead frame), a method of supplying a die bonding material to a tab portion on a lead frame, mounting a semiconductor element thereon, and adhering the same is used. I have been. As these die bonding materials, for example, Au-Si eutectic, solder, resin paste and the like are known. Among these die bonding materials, a die bonding method using a resin paste is currently frequently used.
As a method for supplying the resin paste to the lead frame, a stamping method, a dispensing method, and a screen printing method are adopted, and the dispensing method is most often used. The dispensing method is
This is a method in which a resin paste is filled in a syringe and the paste is discharged onto a tub at atmospheric pressure by a device called a dispenser. However, this method has a disadvantage that it is difficult to apply a resin paste uniformly over the entire surface of the tab as the semiconductor element becomes larger, and in the case of using the resin paste, there is also a problem that a void is generated in the adhesive layer during curing. is there.

On the other hand, as a method for avoiding the disadvantages of these pastes, a method using a film-like adhesive is disclosed in Japanese Patent Application Laid-Open Nos. Sho 63-289822 and Hei 1-19735.
However, there is a problem that the film must be cut in accordance with the size of the element, and an expensive device dedicated to sticking the cut film so as not to shift the position is required.

Further, as a method of solving this problem,
Japanese Patent Laying-Open No. 6-302629 discloses the following method. First, apply the adhesive in a film on the carrier film, dry it, cover it with a release film to create a carrier sheet with an adhesive, peel off the release film, and thermally transfer the adhesive on the carrier sheet to the back of the wafer. To obtain a wafer with an adhesive. After attaching the wafer with adhesive on the dicing tape, the wafer is diced and divided into semiconductor elements with adhesive. The semiconductor element with the adhesive is peeled off from the dicing tape and is thermocompression-bonded to a lead frame to adhere the semiconductor element to the lead frame.

However, according to the method, first,
Since the temperature for thermal transfer cannot be set higher than the heat resistant temperature of the carrier film, there is a problem that the temperature for thermally transferring the adhesive to the wafer is limited. Second, when the adhesive is thermally transferred, there is a problem that the wafer is greatly warped because the carrier film laminated with the adhesive thermally shrinks. If the warpage is large, a portion having low adhesion to the dicing tape is likely to be generated, and the semiconductor element will peel off from the dicing tape during dicing. Especially 300μ which is likely to be warped
It has been difficult to obtain a wafer that can be applied to wafers of m or less.

[0006]

According to the first aspect of the present invention, when the adhesive is thermocompression-bonded to the back surface of a wafer, cracks do not occur even in a wafer of 300 μm or less, the warpage is small, and the adhesive is applied over a wide temperature range. The present invention provides an adhesive which can bond a substrate to a wafer and can be die-bonded with a simple device. The invention described in claim 2 provides a method for manufacturing a semiconductor device using the adhesive.

[0007]

The present invention relates to a die bonding adhesive containing a thermoplastic polyimide resin having a glass transition temperature of 90 ° C. or lower and a thermosetting resin. The present invention also provides a film-like single-layer adhesive made of a thermoplastic polyimide resin having a glass transition temperature of 80 ° C. or lower and a thermosetting resin on the back surface of a wafer on which a large number of semiconductor elements are formed by thermocompression bonding. A wafer, and the resulting wafer with adhesive is adhered and fixed to a dicing tape, divided into individual semiconductor elements and cut, and then the semiconductor element with adhesive obtained by peeling off the dicing tape is die-bonded to a support member. The present invention relates to a method for manufacturing a semiconductor device.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is an explanatory view of a process of dicing from a process of bonding a film-shaped single-layer adhesive to the back surface of a wafer to a semiconductor device with an adhesive. FIG. 2 is an explanatory view of a process of manufacturing a semiconductor device by dicing and bonding a semiconductor element with an adhesive to a lead frame tab portion.

In FIG. 1, an adhesive 1 is laminated on a carrier film 2 such as a polyester film or a polypropylene film to form an adhesive film 3 with a base film (a). The single-layer adhesive is obtained by peeling the carrier film 2 from the adhesive film 3 with the base film at the time of use. The adhesive film 3 with a base film is produced, for example, as follows. First, a polyimide resin and a thermosetting resin are dissolved in an organic solvent. The organic solvent used here is not particularly limited as long as it can be uniformly dissolved or kneaded. Next, additives are added and mixed as needed. The varnish obtained in this manner is, for example, uniformly coated on a carrier film 2 such as a polyester sheet, and the conditions under which the solvent used is sufficiently volatilized, that is,
It is heated at a temperature of approximately 60-200 ° C. for 0.1-30 minutes.

Then, the adhesive 1 is pressed and heated on the wafer 4 by using a roll 5 with heat so as to be sandwiched between the hot plate 6 and a temperature of about 60 ° C. to 200 ° C. for about 0.1 to 10 hours.
(B) to obtain a wafer with an adhesive (c).
A dicing tape 7 is attached to the adhesive 1 side of the wafer with the adhesive (d), and diced, and the semiconductor element 8 with the adhesive is attached.
(E). Division can be performed using a known wafer cutter.

In FIG. 2, the semiconductor element 8 with adhesive is peeled off from the dicing tape 7 using a suction collet 9 and a push-up collet 10 (f), and the semiconductor element 8 with adhesive is conveyed while being sucked by the suction collet 9. (G), put on a support member, for example, a die pad portion 12 on a lead frame 11, press-bonded, post-cured and bonded on a heat block 13, further wire-bonded (h), and (I).

As the adhesive used in the present invention, for example, an adhesive mainly composed of a mixture of a thermoplastic polyimide resin having a glass transition temperature (Tg) of 90 ° C. or lower and a thermosetting resin such as an epoxy resin is used. An additive such as an inorganic filler is appropriately mixed.

In the present invention, the Tg of the thermoplastic polyimide resin is 90 ° C. or less, but preferably 30 to 80 ° C. If the Tg of the thermoplastic polyimide resin is too high, the effect of the present invention is reduced. If the Tg is too low, the surface of the adhesive becomes tacky. The thermoplastic polyimide resin of the present invention preferably has no tackiness at room temperature. The thermoplastic polyimide resin can be obtained by reacting a tetracarboxylic dianhydride with a diamine, and a thermoplastic resin is selected and used.

The tetracarboxylic dianhydride used for producing such a polyimide resin includes 1,2- (ethylene) bis (trimellitate dianhydride), 1,3-
(Trimethylene) bis (trimellitate dianhydride),
1,4- (tetramethylene) bis (trimellitate dianhydride), 1,5- (pentamethylene) bis (trimellitate dianhydride), and when n is 6 to 20, 1,6- (hexamethylene) bis ( Trimellitate dianhydride), 1,7
-(Heptamethylene) bis (trimellitate dianhydride), 1,8- (octamethylene) bis (trimellitate dianhydride), 1,9- (nonamethylene) bis (trimellitate dianhydride), 1,10- ( Decamethylene) bis (trimellitate dianhydride), 1,12- (dodecamethylene) bis (trimellitate dianhydride), 1,16-
(Hexadecamethylene) bistrimellitate dianhydride,
1,18- (octadecamethylene) bis (trimellitate dianhydride), pyromellitic dianhydride, 3,3 ′,
4,4'-diphenyltetracarboxylic dianhydride, 2,
2 ', 3,3'-diphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane Dianhydride, 1,1-bis (2,3-
Dicarboxyphenyl) ethane dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, bis (2,3-dicarboxyphenyl) methane dianhydride,
Bis (3,4-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, bis (3 4-dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3 ′, 4′-benzophenonetetracarboxylic dianhydride, 2,3 2 ', 3-benzophenonetetracarboxylic dianhydride, 2,3,3',
4'-benzophenonetetracarboxylic dianhydride, 1,
2,5,6-naphthalenetetracarboxylic dianhydride,
2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,4,5-naphthalene-tetracarboxylic dianhydride, 1,4,5,8-naphthalene-tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4
5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphthalene-1,
4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride,
Thiophene-2,3,4,5-tetracarboxylic dianhydride, 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride, 3,4,3', 4'-biphenyltetracarboxylic dianhydride Anhydride, 2,3,2 ', 3'-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4-dicarboxyphenyl) methylphenylsilane Dianhydride, bis (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride, 1,3-bis (3,4 -Dicarboxyphenyl) -1,1,3,3-
Tetramethyldicyclohexane dianhydride, p-phenylenebis (trimellitate anhydride), ethylene tetracarboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, decahydronaphthalene-1,4, 5,8
-Tetracarboxylic dianhydride, 4,8-dimethyl-1,
2,3,5,6,7-hexahydronaphthalene-1,
2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride,
1,2,3,4-cyclobutanetetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-
2,3-dicarboxylic dianhydride) sulfone, bicyclo-
(2,2,2) -oct (7) -ene 2,3,5,6-
Tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis [4- (3,4-dicarboxyphenoxy) phenyl] hexafluoropropane Dianhydride,
4,4'-bis (3,4-dicarboxyphenoxy) diphenylsulfide dianhydride, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic dianhydride), 1,3 -Bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic dianhydride), 5- (2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1,
2-dicarboxylic dianhydride, tetrahydrofuran-2,
There are 3,4,5-tetracarboxylic dianhydride and the like, and two or more kinds may be used as a mixture.

The diamine used for producing the polyimide resin includes 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, and 1,6-diaminohexane. , 1,7-
Diaminoheptane, 1,8-diaminooctane, 1,9
-Diaminononane, 1,10-diaminodecane, 1,1
Aliphatic diamines such as 1-diaminoundecane and 1,12-diaminododecane, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3 ′
-Diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4 '
-Diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenyl Sulfone, 3,
4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfide, 3,4'-diaminodiphenylsulfide, 4,4'-diaminodiphenylsulfide, ,
3'-diaminodiphenyl ketone, 3,4'-diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane,
2,2 '-(3,4'-diaminodiphenyl) propane, 2,2-bis (4-aminophenyl) propane,
2,2-bis (3-aminophenyl) hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-aminophenyl) hexafluoropropane, 1,3 -Bis (3-aminophenoxy) benzene, 1,4-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 '-(1,4-phenylenebis (1 -Methylethylidene)) bisaniline, 3,4 '
-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 4,4 '-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 2,2
-Bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexa Fluoropropane, 2, 2
-Bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) sulfide, bis (4- (4-aminophenoxy) phenyl) sulfide, bis (4- (3 -Aminophenoxy) phenyl) sulfone, bis (4- (4
And aromatic diamines such as -aminophenoxy) phenyl) sulfone.

The condensation reaction between the tetracarboxylic dianhydride and the diamine is carried out in an organic solvent. In this case, the tetracarboxylic dianhydride and the diamine are preferably used in equimolar or almost equimolar, and the order of addition of each component is arbitrary. Examples of the organic solvent used include dimethylacetamide, dimethylformamide, N-methyl-2-pyrrolidone, dimethylsulfoxide, hexamethylphosphorylamide, m-cresol, o-chlorophenol and the like. The reaction temperature is 80 ° C or lower, preferably 0 to 50 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually increases. in this case,
Polyamic acid, which is a precursor of polyimide, is produced.

The polyimide can be obtained by dehydrating and ring-closing the above reaction product (polyamic acid). Dehydration ring closure is 1
The heat treatment can be performed at 20 ° C. to 250 ° C. or a chemical method. In the case of a method of performing heat treatment at 120 ° C. to 250 ° C., the heat treatment is preferably performed while removing water generated in the dehydration reaction outside the system. At this time, water may be azeotropically removed using benzene, toluene, xylene, or the like. In the present invention, the polyimide resin is a general term for polyimide and its precursor. Polyimide precursors include, in addition to polyamic acid, polyamic acid partially imidized.

In the case of ring closure by dehydration by a chemical method, acetic anhydride, propionic anhydride, acid anhydride of benzoic anhydride, carbodiimide compounds such as dicyclohexylcarbodiimide and the like are used as a ring closing agent. At this time, if necessary, a ring-closing catalyst such as pyridine, isoquinoline, trimethylamine, aminopyridine, imidazole and the like may be used. The ring-closing agent or the ring-closing catalyst is preferably used in an amount of 1 to 8 mol per 1 mol of tetracarboxylic dianhydride.

The thermosetting resin is a resin which forms a three-dimensional network structure by heating and cures. The amount of the thermosetting resin is 0.1 to 200 parts by weight, preferably 1 to 10 parts by weight, per 100 parts by weight of the thermoplastic polyimide resin.
0 parts by weight. If the amount exceeds 200 parts by weight, the film-forming properties deteriorate.

When a resin containing an epoxy resin, a curing agent and a curing accelerator is selected as the thermosetting resin, the epoxy resin used is one containing at least two epoxy groups in the molecule and having a curability and A phenol glycidyl ether type epoxy resin is preferred from the viewpoint of the properties of the cured product. Such resins include bisphenol A, bisphenol AD, bisphenol S, bisphenol F
Alternatively, condensates of halogenated bisphenol A and epichlorohydrin, glycidyl ether of phenol novolak resin, glycidyl ether of cresol novolak resin, glycidyl ether of bisphenol A novolak resin and the like can be mentioned. The amount of the epoxy resin is from 1 to 200 parts by weight, preferably from 5 to 100 parts by weight, based on 100 parts by weight of the polyimide resin.

As the epoxy resin, for example, a bisphenol A type epoxy resin [AER-X8501 (trade name of Asahi Kasei Kogyo Co., Ltd.), R-301 (oiled shell epoxy)
YL-980 (Yukaka Epoxy Co., Ltd.)
Trade name)], bisphenol F type epoxy resin [[YD
F-170 (trade name of Toto Kasei Co., Ltd.)], bisphenol AD epoxy resin [R-1710 (trade name of Mitsui Chemicals, Inc.), EXA-830CRP (Dai Nippon Ink Chemical Industry)
Phenol novolak type epoxy resin [N-730S (trade name of Dainippon Ink and Chemicals, Inc.)]
Quatrex-2010 (trade name of Dow Chemical Company)], cresol novolak type epoxy resin [YDCN-702
S (Toto Kasei Co., Ltd.), EOCN-100 (Nippon Kayaku Co., Ltd.)], polyfunctional epoxy resin [EPPN-5]
01 (trade name of Nippon Kayaku Co., Ltd.), TACTIX-742
(Trade name of Dow Chemical Company), VG-3010 (trade name of Mitsui Chemicals, Inc.), 1032S (trade name of Yuka Shell Epoxy Co., Ltd.), epoxy resin having a naphthalene skeleton [HP-4032 (Dainippon Ink) Chemical Industry Co., Ltd.)], Alicyclic epoxy resin [CEL-3000 (Daicel Chemical Industry Co., Ltd.)], Epoxidized polybutadiene [PB-4700 (Daicel Chemical Industry Co., Ltd.)], Amine type epoxy resin [ELM-100 (trade name of Sumitomo Chemical Co., Ltd.), YH-434L (Toto Kasei Co., Ltd.)
Product name)], resorcinol type epoxy resin [Denacol E
X-201 (trade name of Nagase Kasei Kogyo Co., Ltd.)], neopentyl glycol type epoxy resin [Denacol EX-21
1 (trade name of Nagase Kasei Kogyo Co., Ltd.)], hexanedine glycol type epoxy resin [Denacol EX-212
(Nagase Kasei Kogyo Co., Ltd.)], ethylene propylene glycol type epoxy resin [Denacol EX-81
0,811,850,851,821,830,83
2,841,861 (Nagase Kasei Kogyo Co., Ltd.)],
The following general formula (I)

Embedded image [S represents an integer of 0 to 5] [E-XL-24, E-XL-3L (trade name of Mitsui Chemicals, Inc.)]. These can be used alone or in combination of two or more.

PGE (trade name of Nippon Kayaku Co., Ltd.), PP-1
01 (trade name of Toto Kasei Co., Ltd.), ED-502, 509
(Trade name of Asahi Denka Kogyo Co., Ltd.), YED-122 (trade name of Yuka Shell Epoxy Co., Ltd.), KBM-403 (trade name of Shin-Etsu Chemical Co., Ltd.), TSL-8350, TSL-835
5, a compound having one epoxy group in one molecule (monofunctional epoxy compound) such as TSL-9905 (trade name of Toshiba Silicone Co., Ltd.) may be used as a part of the epoxy resin. The monofunctional epoxy compound is used within a range that does not impair the properties of the resin paste composition of the present invention, but is preferably used at 10% by weight or less based on the total amount of the epoxy resin.

As the curing agent, for example, a phenol resin is used. The phenol resin has at least two phenolic hydroxyl groups in the molecule. Examples of such a resin include a phenol novolak resin, a cresol novolak resin, a bisphenol A novolak resin, poly-p-vinylphenol, and phenol aralkyl. Resins. The amount of the phenol resin is 2 to 150 parts by weight, preferably 50 to 120 parts by weight, based on 100 parts by weight of the epoxy resin, and less than 2 parts by weight or 1 part by weight.
If it exceeds 50 parts by weight, the curability will be insufficient.

As the curing agent, dicyandiamide and the following general formula (II)

Embedded image [In the formula, R represents a divalent aromatic group such as an m-phenylene group or a p-phenylene group, or a linear or branched alkylene group having 2 to 12 carbon atoms.] [Commercially available products include ADH, PDH, and SDH (all are trade names of Nippon Hydrazine Co., Ltd.)], a reaction product of an epoxy resin and an amine compound [Commercially available products are NOVACURE (a microcapsule type curing agent, Asahi Kasei Corporation) Industrial Co., Ltd.)
There is]. The compounding amount of such an epoxy resin curing agent is preferably from 0.01 to 90% by weight, more preferably from 0.1 to 50% by weight, based on the epoxy resin.

The curing accelerator is not particularly limited as long as it is used for curing the epoxy resin. Such compounds include, for example, imidazoles, dicyandiamide derivatives, dicarboxylic dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-
Tetraphenyl borate, 1,8-diazabicyclo (5,4,0) undecene-7-tetraphenyl borate and the like are used. These may be used in combination of two or more. The amount of the curing accelerator is from 0.01 to 50 parts by weight, preferably from 0.1 to 20 parts by weight, based on 100 parts by weight of the epoxy resin. If the amount exceeds the limit, the storage stability deteriorates.

In order to improve the adhesive strength, a silane coupling agent, a titanium-based coupling agent, a nonionic surfactant, a fluorine-based surfactant, a silicone-based additive, or the like may be appropriately added to the adhesive.

In the present invention, the conditions for sticking to the wafer are as follows: the glass transition temperature Tg of the adhesive film (ぴ relaxation peak temperature in dynamic viscoelasticity measurement) and the thermal decomposition temperature (temperature at which weight loss starts in thermogravimetric analysis). preferable. If the film pressure bonding temperature is lower than Tg, the sticking property decreases,
Exceeding the thermal decomposition temperature is not preferred because the film is thermally decomposed and the adhesiveness is reduced. 120 ° C to 200 ° C is preferred. The pressure applied to the wafer is 0.03MPa ~ 2MPa
Is preferred. If the pressure is less than 0.03 MPa, the pressure is too weak to leave voids, and if it is more than 2 MPa, the pressure is too strong and the wafer may be broken. Examples of the wafer used in the present invention include a silicon wafer and a compound wafer, and are not particularly limited.

The temperature at which the semiconductor device with the adhesive is bonded to a support member such as a lead frame is preferably 70 ° C. or more above Tg and not more than the thermal decomposition temperature. If the bonding temperature of the semiconductor element with an adhesive is lower than 70 ° C. higher than Tg, the adhesiveness is reduced, and if it exceeds the thermal decomposition temperature, the film adhesive is thermally decomposed and the adhesive strength is undesirably reduced. The temperature is preferably from 160 ° C to 240 ° C. Further, the pressure is preferably 0.03 MPa to 2 MPa. 0.
If the pressure is less than 03 MPa, the pressure is too weak, and voids remain. If the pressure is more than 2 MPa, the pressure is too strong, and the semiconductor element may be broken.

The support member for pressing the semiconductor device with the adhesive in the present invention includes a die pad portion of a lead frame, a ceramic wiring board, a glass epoxy wiring board, a polyimide wiring board, and a semiconductor element mounting portion such as an upper portion of a semiconductor element. .

[0030]

EXAMPLES The present invention will be described in more detail with reference to the following Examples, but it should not be construed that the invention is limited thereto. Hereinafter, “parts” means “parts by weight”.

Example 1 Thermoplastic polyimide [glass transition temperature 70 ° C., 4,9,9 moles per mole of decamethylene bistrimellitate dianhydride
0.5 mol of dioxadodecane-1,12-diamine,
Obtained by reacting 0.5 mol of 2,2-bis (4- (4-aminophenoxy) phenylpropane] 100
Part and bisphenol AD epoxy resin (EXA-8
5 parts of 30 CRP, trade name of Dainippon Ink and Chemicals, epoxy equivalent 175), 5 parts of phenol novolak resin (H-1, trade name of Showa Kasei Co., Ltd.) in 5 parts of an equal weight mixed solvent of cyclohexanone and dimethylacetamide 2
Add 80 parts to dissolve. Here, 70 parts of silver powder is added, and the mixture is thoroughly stirred and uniformly dispersed to obtain a coating varnish. This coating varnish is applied on a carrier film (polypropylene) and heated in a hot air circulation type dryer,
The solvent is evaporated to dryness, peeled from the carrier film,
A film-like single-layer adhesive was produced.

The film-like single-layer adhesive is cut to a size larger than the size of the wafer, the film-like adhesive is placed on the back side of the wafer, and the film-like adhesive is pressed at 0.15 MPa and heated at 180 ° C. A wafer with an agent was obtained. The wafer with a film adhesive was heated at 180 ° C. for about 30 seconds to remove residual volatile components. Thereafter, the appearance of the wafer (5 inches) after bonding to the wafer was observed, and the warpage was measured. A dicing tape was stuck on the adhesive surface of the wafer with a film adhesive, and the wafer was divided into semiconductor elements with an adhesive by full-cutting with a dicing machine and spread.

The semiconductor element with the adhesive divided on the dicing tape was pushed up with a pin from under the dicing tape by a die bonder and peeled off by a suction collet. To lead frame, temperature 220 ℃, load 50
g. The chip with the adhesive was mounted in 5 seconds. A semiconductor device was molded by molding with a sealing material (trade name: CEL9200) manufactured by Hitachi Chemical Co., Ltd. 85 samples after sealing
After treating for 168 hours in a thermo-hygrostat at 85 ° C. and 85% RH, it is heated at 240 ° C. for 10 seconds in an IR reflow furnace. Thereafter, the sample was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and the number of occurrences of reflow cracks was evaluated to evaluate reflow crack resistance. Table 1 shows the evaluation results.

Example 2 As a thermoplastic polyimide, a thermoplastic polyimide [glass transition temperature of 50 ° C., 4,9-dioxadodecane-1,4 mol per mol of decamethylene bistrimellitate dianhydride;
Obtained by reacting 1 mol of 12-diamine] in the same manner as in Example 1. Table 1 shows the evaluation results.

Comparative Example 1 Thermoplastic polyimide [Glass transition temperature 120 ° C., 2 moles per mole of decamethylene bistrimellitate dianhydride
100 parts, obtained by reacting 1 mol of 2-bis (4- (4-aminophenoxy) phenylpropane), 5 parts of the same bisphenol AD type epoxy resin (epoxy equivalent: 175) as in Example 1, and the same as in Example 1. 280 parts of an organic solvent was added to and dissolved in 5 parts of a hardening agent phenol novolak resin, and 70 parts of silver powder was added, and the mixture was thoroughly stirred and uniformly dispersed to obtain a coating varnish. Was coated on a carrier film (polyethylene terephthalate) and heated in a hot air circulation type drier to evaporate and dry the solvent to produce a film adhesive with a carrier film.

The film-like adhesive with a carrier film is cut to a size larger than the size of the wafer, and the backside of the wafer is turned up. The film-like adhesive with a carrier film is placed thereon and pressurized at 0.15 MPa, at 150 ° C. to 180 ° C. To obtain a wafer with a film adhesive with a carrier film. After peeling the carrier film,
Wafers with film adhesive are kept at 150 ° C for about 30 seconds.
The mixture was heated at 180 ° C. to remove residual volatile components. Thereafter, the appearance of the wafer (5 inches) after bonding to the wafer was observed, and the warpage was measured. A dicing tape was stuck on the adhesive surface of the wafer with a film adhesive, and the wafer was divided into semiconductor devices with an adhesive by full-cutting with a dicing machine and spread.

The semiconductor element with the adhesive divided on the dicing tape was pushed up from below the dicing tape with a pin by a die bonder and peeled off by a suction collet. To lead frame, temperature 220 ℃, load 50
g. Mount the chip with adhesive in 5 seconds. It is molded with a sealing material (trade name: CEL9200) manufactured by Hitachi Chemical Co., Ltd. to obtain a semiconductor device. 85 samples after sealing
After treating for 168 hours in a thermo-hygrostat at 85 ° C. and 85% RH, it is heated in a 1R reflow furnace at 240 ° C. for 10 seconds. Thereafter, the sample was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and the number of occurrences of reflow cracks was evaluated to evaluate reflow crack resistance. Table 1 shows the evaluation results.

Comparative Example 2 100 parts of the same thermoplastic polyimide as in Comparative Example 1, Example 1
To 5 parts of the same bisphenol AD type epoxy resin (epoxy equivalent: 175) and 5 parts of the same curing agent phenol novolak resin as in Example 1, 280 parts of a mixed solvent of an equal weight of cyclohexanone and dimethylacetamide was added and dissolved.
Here, 70 parts of silver powder is added, and the mixture is thoroughly stirred and uniformly dispersed to obtain a coating varnish. This coating varnish is applied on a carrier film (polypropylene), heated in a hot air circulation type drier to evaporate and dry the solvent, and peeled off from the carrier film to produce a film-like single-layer adhesive. did.

The film-like single-layer adhesive is cut to a size larger than the size of the wafer, the film-like adhesive is placed on the back side of the wafer, and the film-like adhesive is pressed at 0.15 MPa and heated at 180 ° C. A wafer with an agent was obtained. The wafer with a film adhesive was heated at 180 ° C. for about 30 seconds to remove residual volatile components. Thereafter, the appearance of the wafer (5 inches) after bonding to the wafer was observed, and the warpage was measured. A dicing tape was attached to the adhesive surface of the wafer with a film adhesive, and the wafer was divided into semiconductor devices with an adhesive by full-cutting with a dicing machine and spread.

The semiconductor element with the adhesive divided on the dicing tape is pushed up from below the dicing tape by a pin by a die bonder and peeled off by a suction collet. To lead frame, temperature 220 ℃, load 50
g. Mount the chip with adhesive in 5 seconds. A semiconductor device was molded by molding with a sealing material (trade name: CEL9200) manufactured by Hitachi Chemical Co., Ltd. 85 samples after sealing
After treating for 168 hours in a thermo-hygrostat at 85 ° C. and 85% RH, it was heated at 240 ° C. for 10 seconds in an IR reflow oven. Thereafter, the sample was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and the number of occurrences of reflow cracks was evaluated to evaluate reflow crack resistance. Table 1 shows the results.

[0041]

[Table 1]

[0042]

According to the method of the present invention, when the adhesive is thermocompression-bonded to the back surface of the film-shaped wafer, the warpage is small even for a wafer of 300 μm or less, and the temperature is wide at a wide temperature. An adhesive can be bonded to the wafer, and a semiconductor device having no voids in the adhesive layer and excellent in reflow resistance can be manufactured.

[Brief description of the drawings]

FIG. 1 is an explanatory view of a process of dicing from a process of bonding a film adhesive to the back surface of a wafer to obtain a semiconductor device with an adhesive.

FIG. 2 is a process explanatory view of manufacturing a semiconductor device by dicing and bonding a semiconductor element with an adhesive to a lead frame.

[Description of Signs] 1 Adhesive 2 Carrier film 3 Adhesive with base film 4 Silicon wafer 5 Roll with heat 6 Hot plate 7 Dicing tape 8 Semiconductor element with adhesive 9 Suction collet 10 Push-up collet 11 Lead frame 12 Die pad 13 Heat Block 14 sealing resin

 ──────────────────────────────────────────────────続 き Continued from the front page F term (reference) 4J004 AA02 AA11 AA13 AA17 AB03 AB05 CA04 CA06 CC02 FA05 FA08 4J040 EB032 EC061 EC062 EC071 EC072 EC151 EC152 EC332 EH031 EH032 HC15 HC18 HC24 HD22 HD39 JA09 JB02 KA16 KA17 LA20 BA39 BB03 BB18 FA08 FA25

Claims (2)

[Claims] 1. An adhesive for die bonding comprising a thermoplastic polyimide resin having a glass transition temperature of 90 ° C. or lower and a thermosetting resin. 2. A single-layer film adhesive made of a thermoplastic polyimide resin having a glass transition temperature of 90 ° C. or less and a thermosetting resin is thermocompression-bonded to the back surface of the wafer on which a number of semiconductor elements are formed. The obtained wafer with adhesive is adhered and fixed to a dicing tape, divided into individual semiconductor elements and cut, and the semiconductor element with adhesive obtained by peeling off the dicing tape is die-bonded to a support member. Manufacturing method of a semiconductor device.