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JP2000183024A - Substrate-processing apparatus - Google Patents

Substrate-processing apparatus

Info

Publication number
JP2000183024A
JP2000183024A JP35976798A JP35976798A JP2000183024A JP 2000183024 A JP2000183024 A JP 2000183024A JP 35976798 A JP35976798 A JP 35976798A JP 35976798 A JP35976798 A JP 35976798A JP 2000183024 A JP2000183024 A JP 2000183024A
Authority
JP
Japan
Prior art keywords
tank
processing
liquid
substrate
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP35976798A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Nishizaki
光広 西崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP35976798A priority Critical patent/JP2000183024A/en
Publication of JP2000183024A publication Critical patent/JP2000183024A/en
Pending legal-status Critical Current

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, wherein a process bath and piping of a single-vessel substrate processing device used in a cleaning process for a semiconductor and liquid-crystal substrate are cleaned sufficiently with less amount of pure water. SOLUTION: An overflow type process bath 1 comprising an inner bath 3, where a substrate 11 is submerged for processing of a substrate surface and an outer bath 2 for recovering a liquid overflowed from the inner bath 3, a processor liquid recovering pipe 13 for recovering a processor liquid into a recovery tank 12, where a processor liquid 20 is temporarily stored from the inner bath 3, a processor liquid supply pipe 21 which supplies the processor liquid 20 to the inner bath 3 from the recovery tank 12, a circulating piping 8 which sends the processor liquid 20 into the inner bath 3 from the outer vessel 2, and a drain piping 15 provided to each of the inner vessel 3 and outer vessel 2, are provided. Here, a pure water supply pipe 16 is connected, to each of the processor liquid supply pipe 21, processor liquid recovery pipe 13, circulating piping 8, and the drain piping 15 through valves 41-46.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、基板処理装置に関
する。より詳しくは、薬液を用いて半導体ウェーハなど
の基板を洗浄処理する基板処理装置に関するものであ
る。
[0001] The present invention relates to a substrate processing apparatus. More specifically, the present invention relates to a substrate processing apparatus for cleaning a substrate such as a semiconductor wafer using a chemical solution.

【0002】[0002]

【従来の技術】半導体や液晶基板の製造工程として不可
欠なものの一つに洗浄工程がある。洗浄工程は、基板表
面の微小なゴミ(以下、パーティクルと記載)の除去や
レジスト剥離やエッチングを目的とし、それぞれに応じ
た薬液を選択して用いる。
2. Description of the Related Art One of the indispensable processes for manufacturing semiconductors and liquid crystal substrates is a cleaning process. The cleaning step is performed for the purpose of removing minute dust (hereinafter, referred to as particles) on the substrate surface, peeling off the resist, and etching, and selecting and using a chemical solution corresponding to each.

【0003】図4は、半導体装置製造プロセスにおける
洗浄工程のフローチャートを示す。図示したように、洗
浄工程は、例えば処理に用いる薬液を(A)と(B)の
二種類使用するとき、まず薬液(A)で基板を処理し
(ステップS1)、次に基板を水洗し(ステップS
2)、さらに薬液(B)で基板を処理し(ステップS
3)、再び基板を水洗する(ステップS4)。そして最
終水洗を行って(ステップS5)、乾燥する(ステップ
S6)。
FIG. 4 shows a flowchart of a cleaning step in a semiconductor device manufacturing process. As shown in the drawing, in the cleaning step, for example, when two types of chemicals used for the processing are used (A) and (B), the substrate is first treated with the chemical (A) (step S1), and then the substrate is washed with water. (Step S
2) Further, the substrate is treated with the chemical solution (B) (Step S)
3) The substrate is washed again with water (step S4). Then, final washing is performed (step S5), and drying is performed (step S6).

【0004】このような洗浄工程において、従来はそれ
ぞれのステップに対して各々の処理に適した複数の薬液
槽と水洗槽を用意して、それぞれの槽で順番に処理を行
う多槽型洗浄装置が主流であった。
Conventionally, in such a washing process, a multi-tank type washing apparatus in which a plurality of chemical solution tanks and a washing tank suitable for each processing are prepared for each step, and the processing is sequentially performed in each tank. Was mainstream.

【0005】図5は、上記図4の洗浄工程を実施するた
めの従来の多槽型洗浄装置の概略図である。図示したよ
うに、この多槽型洗浄装置は、図4の各ステップS1か
らS6の処理を行うための薬液(A)処理槽81、水洗
槽82、薬液(B)処理槽83、水洗槽84、最終水洗
槽85、乾燥処理槽86の6個の処理槽を備え、これら
の薬液槽や水洗槽を順番に並べて配列したものである。
処理すべき基板は、例えば25枚が1ロットとしてキャ
リア71に縦に収容され、ロボットなどの搬送手段によ
ってこのキャリア71に収容された複数枚の基板61が
それぞれの槽に浸漬され、順番に処理される。このよう
な多槽型洗浄装置は、キャリア71内の複数枚数の処理
基板を一括して各槽で同時に処理できるため、生産性に
優れている。
FIG. 5 is a schematic view of a conventional multi-tank type cleaning apparatus for performing the cleaning step shown in FIG. As shown in the figure, this multi-tank type cleaning apparatus includes a chemical (A) processing tank 81, a water cleaning tank 82, a chemical liquid (B) processing tank 83, and a water cleaning tank 84 for performing the processing of steps S1 to S6 in FIG. , A final washing tank 85 and a drying treatment tank 86, and these chemical tanks and washing tanks are arranged in order.
For example, 25 substrates to be processed are vertically accommodated in a carrier 71 as one lot, and a plurality of substrates 61 accommodated in the carrier 71 are immersed in respective tanks by a conveyance means such as a robot, and are sequentially processed. Is done. Such a multi-tank type cleaning apparatus is excellent in productivity because a plurality of substrates to be processed in the carrier 71 can be simultaneously processed in each of the tanks.

【0006】図6は、上記図5に示した従来の多槽型処
理装置の薬液(A)処理槽81または薬液(B)処理槽
83の詳細構成図である。基板を処理する薬液処理槽8
1(83)は、外槽52と内槽53からなる。基板61
を処理する薬液50を調整するため、複数の薬液は各々
の秤量タンク54内に溜められ、液面計55でその量を
調整され、薬液供給管56を介して外槽52に供給され
る。この薬液の濃度調整は純水供給管57より供給され
る純水によって行われる。このようにして供給された薬
液は、外槽52から内槽53に循環配管58を介して送
られる。この循環配管58には、ポンプ59が備えてあ
り、これによって外槽52内の薬液はフィルター60を
通って薬液内のパーティクル等の不純物を除去して内槽
53に送られる。
FIG. 6 is a detailed configuration diagram of the chemical (A) processing tank 81 or the chemical (B) processing tank 83 of the conventional multi-tank processing apparatus shown in FIG. Chemical processing tank 8 for processing substrates
1 (83) comprises an outer tank 52 and an inner tank 53. Substrate 61
In order to adjust the chemical solution 50 for processing, a plurality of chemical solutions are stored in the respective weighing tanks 54, the amounts thereof are adjusted by a liquid level meter 55, and supplied to the outer tank 52 via the chemical solution supply pipe 56. The concentration of the chemical is adjusted by pure water supplied from a pure water supply pipe 57. The chemical solution thus supplied is sent from the outer tank 52 to the inner tank 53 via the circulation pipe 58. The circulation pipe 58 is provided with a pump 59, whereby the chemical in the outer tank 52 passes through the filter 60 to remove impurities such as particles in the chemical and is sent to the inner tank 53.

【0007】この内槽53には、処理すべき基板61が
通常8インチ以下の半導体基板であれば、前述のように
25枚もしくは50枚程度を単位としてキャリアに収容
された状態で投入される。薬液処理槽81内の薬液50
は循環ろ過しながら基板61を処理する。この薬液50
は必要に応じてバルブ63を開けて処理槽81の内槽5
3に設けられたドレン配管62により排出される。薬液
50で処理した後の基板61は、前述のようにロボット
によりこの薬液処理槽81(83)から取出され、隣接
して設けられた別の専用の水洗槽82(84)に搬送さ
れ、この専用の水洗槽82(84)で基板の水洗が行わ
れる。従ってこの薬液処理槽81(83)の内槽53に
は水洗用の純水供給管は設けられていない。
If the substrate 61 to be processed is usually a semiconductor substrate of 8 inches or less, it is put into the inner tank 53 in a state of being accommodated in a carrier in units of about 25 or 50 as described above. . Chemical 50 in chemical treatment tank 81
Processes the substrate 61 while circulating and filtering. This chemical 50
The valve 63 is opened as necessary, and the inner tank 5 of the processing tank 81 is opened.
The exhaust gas is discharged through a drain pipe 62 provided in the fuel cell 3. The substrate 61 after the treatment with the chemical solution 50 is taken out of the chemical solution treatment tank 81 (83) by the robot as described above, and transported to another dedicated washing tank 82 (84) provided adjacently. The substrate is washed in a dedicated washing tank 82 (84). Therefore, the inner tank 53 of the chemical treatment tank 81 (83) is not provided with a pure water supply pipe for washing.

【0008】しかしながら、上記従来の多槽式洗浄装置
では、複数の槽を直線的に並べるため、非常に長い、占
有面積の大きな設備となっている。特に液晶基板は、昨
今の表示機器の大型化に伴いその基板も大型化してい
る。液晶基板サイズには半導体のような標準規格はない
が、現在は600mm×720mmあるいは650mm
×830mm基板が製造工程に導入されており、今後も
大型化が進むと予想される。よってそれに伴い、基板処
理装置も大型化することになり、さらに多くのスペース
を必要とする。さらには半導体や液晶の製造において
は、製造時の空気清浄度は非常に高いものが要求されて
いるため、装置が大型化すると、空気清浄のためのクリ
ーンルーム等のエリアも広くなり、余計にコストがかか
る。よって、処理槽の数を減らし、装置の小型化が要求
されている。
However, in the above-described conventional multi-tank type washing apparatus, since a plurality of tanks are arranged in a straight line, the equipment is very long and occupies a large area. In particular, the size of liquid crystal substrates has been increasing with the recent increase in size of display devices. There is no standard for liquid crystal substrate size like semiconductors, but currently 600mm × 720mm or 650mm
A × 830 mm substrate has been introduced into the manufacturing process, and it is expected that the size will increase in the future. Accordingly, the size of the substrate processing apparatus is accordingly increased, and more space is required. Furthermore, in the production of semiconductors and liquid crystals, very high air cleanliness is required during production.As the size of the equipment increases, the area of a clean room and the like for air purification also increases, resulting in additional costs. It takes. Therefore, it is required to reduce the number of processing tanks and downsize the apparatus.

【0009】図7は、このような基板処理装置の小型化
を図るための装置構成を示す。(A)図は、図4で示し
た薬液(A)処理(ステップS1)と、水洗(ステップ
S2)を後述する水中置換方式を用いて同じ処理槽87
で行い、同様に薬液(B)処理(ステップS3)と、水
洗(ステップS4)を同じ処理槽88で行うことによ
り、処理槽の数を図5の6個から4個に減らして装置の
小型化を図っている。(B)図はさらに薬液(A)処理
(ステップS1)から薬液(B)処理の水洗および最終
水洗(ステップS5)までを1つの処理槽91で行うこ
とにより装置の小型化を図っている。(C)は最終の乾
燥処理(ステップS6)までを単一処理槽93で行うこ
とによりさらに小型化を図ったものである。
FIG. 7 shows an apparatus configuration for miniaturizing such a substrate processing apparatus. (A) shows the same treatment tank 87 for the chemical (A) treatment (step S1) and water washing (step S2) shown in FIG.
Similarly, by performing the chemical (B) treatment (step S3) and the water washing (step S4) in the same processing tank 88, the number of processing tanks is reduced from six to four in FIG. It is trying to make it. (B) further reduces the size of the apparatus by performing the processing from the chemical solution (A) processing (step S1) to the chemical solution (B) processing water washing and final water washing (step S5) in one processing tank 91. (C) further downsizes the apparatus by performing the processing up to the final drying processing (step S6) in the single processing tank 93.

【0010】図8は、このような装置小型化を図るため
に薬液処理と水洗処理とを同一処理槽で行うための水中
置換方式の説明図である。この水中置換方式では、処理
槽51を形成する内槽53と外槽52のうち、内槽53
で基板61を薬液によって処理し、その後内槽53の底
部に接続された純水供給管64から純水を内槽底部から
供給し、薬液を内槽53からオーバーフローさせて徐々
に純水で置換し、最終的に全て純水とすることにより基
板を洗浄する。外槽52にオーバーフローした薬液はド
レン配管62から排出する。このような水中置換方式を
用いることにより1つの処理槽で薬液処理と水洗処理を
続けて行うことができる。
FIG. 8 is an explanatory view of an underwater replacement system for performing a chemical treatment and a water washing treatment in the same treatment tank in order to reduce the size of the apparatus. In this underwater replacement method, of the inner tank 53 and the outer tank 52 forming the processing tank 51, the inner tank 53
Then, the substrate 61 is treated with a chemical solution, and then pure water is supplied from the bottom portion of the inner bath from a pure water supply pipe 64 connected to the bottom of the inner bath 53, and the chemical solution overflows from the inner bath 53 and is gradually replaced with pure water. Then, finally, the substrate is washed by making all the pure water. The chemical liquid overflowing to the outer tank 52 is discharged from the drain pipe 62. By using such an underwater replacement method, the chemical solution treatment and the water washing treatment can be performed continuously in one treatment tank.

【0011】[0011]

【発明が解決しようとする課題】しかしながら、上記従
来の水中置換方式を用いた単一槽基板処理装置では、薬
液や純水をその処理ごとに捨てることになるため、ラン
ニングコストがかかるばかりでなく、その処理に多量の
水や中和などの薬液が必要となり、環境への負荷が増大
してしまうこととなる。
However, in the conventional single-tank substrate processing apparatus using the underwater replacement method, the chemical solution and pure water are discarded for each processing, so that not only the running cost is increased but also the cost is increased. In addition, a large amount of water or a chemical solution such as neutralization is required for the treatment, and the burden on the environment is increased.

【0012】一方、特開平7−99177号公報におい
て、単一槽の基板処理装置が開示されている。この公報
記載の基板の浸漬処理装置は半導体基板などの表面処理
を行う基板処理装置が大型化するのを防止しつつ浸漬処
理装置の処理液の消費量を抑えてランニングコストを低
減することを目的とし、オーバーフロー型の基板処理槽
から導出した排液路を分岐して、一方を排液弁を介して
ドレンに、他方を処理液回収路として処理液回収弁を介
して処理液貯留容器に接続する。そして複数種の表面処
理毎に、基板処理槽からオーバーフローした処理液を処
理液回収弁を介して貯留容器に回収して、再び基板処理
槽に循環して再利用するものである。
On the other hand, Japanese Patent Application Laid-Open No. 7-99177 discloses a single-tank substrate processing apparatus. The substrate immersion processing apparatus described in this publication is intended to reduce the running cost by suppressing the consumption of the processing liquid of the immersion processing apparatus while preventing the substrate processing apparatus for performing surface treatment of a semiconductor substrate or the like from becoming large. The drainage path derived from the overflow type substrate processing tank is branched, and one is connected to the drain via the drainage valve, and the other is connected to the processing liquid storage vessel via the processing liquid recovery valve as the processing liquid recovery path. I do. Then, for each of a plurality of types of surface treatments, the processing liquid overflowing from the substrate processing tank is collected in a storage container via a processing liquid recovery valve, and circulated again to the substrate processing tank for reuse.

【0013】しかしながら、この公報記載の基板処理装
置においては、複数の配管からなる処理液の供給側配管
系と回収側あるいは排液側の配管系のうち、供給側配管
にのみ、純水管を接続して水洗処理を行う構成であり、
排液側の配管系や回収側の配管系には純水管が接続され
ていない。したがって水洗処理時に、排液側や回収側の
配管内に薬液が残るおそれがあり、特に回収側の配管系
内に薬液が残ると次に使用する別の薬液と混合して不具
合を起こす場合がある。
However, in the substrate processing apparatus described in this publication, a pure water pipe is connected only to the supply side pipe of the processing liquid supply side piping system composed of a plurality of pipes and the recovery side or drainage side piping system. And perform a water washing process.
The pure water pipe is not connected to the drain system or the collection system. Therefore, during the water washing process, there is a possibility that the chemical solution remains in the drain side or the collection side piping, and especially when the chemical solution remains in the collection side piping system, it may mix with another chemical solution to be used next and cause a problem. is there.

【0014】また、各配管系のバルブを閉じて純水管か
ら純水を供給して処理槽内の薬品と置換するときに、各
バルブと処理槽間の配管内が袋小路状態となって置換が
進まず、水洗処理時間が長くかかる。このため生産性が
低下するとともに、高価な純水の使用量が増加し、コス
トが上昇する。
Further, when the valves of the respective piping systems are closed and pure water is supplied from the pure water pipe to replace the chemicals in the processing tank, the piping between each valve and the processing tank is in a dead-end state and the replacement is performed. If it does not proceed, the washing process takes a long time. For this reason, the productivity decreases, the amount of expensive pure water used increases, and the cost increases.

【0015】本発明は、上記従来技術を考慮したもので
あって、半導体や液晶基板の洗浄工程で用いる単一槽基
板処理装置の処理槽や配管を十分に洗浄することがで
き、かつ洗浄を短時間で効率的に行って使用純水量を少
なくした基板処理装置の提供を目的とする。
The present invention has been made in consideration of the above-mentioned conventional technology, and can sufficiently clean a processing tank or a pipe of a single-tank substrate processing apparatus used in a cleaning process of a semiconductor or a liquid crystal substrate. It is an object of the present invention to provide a substrate processing apparatus which can be efficiently performed in a short time to reduce the amount of pure water used.

【0016】[0016]

【課題を解決するための手段】前記目的を達成するた
め、本発明では、基板を浸漬して基板表面の処理を行う
内槽とこの内槽からオーバーフローした液を回収する外
槽からなるオーバーフロー型の処理槽と、この内槽から
処理液を一時的に溜めておく回収タンクに処理液を回収
する処理液回収管と、前記回収タンクから内槽に処理液
を供給する処理液供給管と、外槽から内槽に処理液を送
る循環配管と、前記内槽と外槽の各々に設けたドレン配
管とを有する基板処理装置において、前記処理液供給
管、処理液回収管、循環配管およびドレン配管に対しそ
れぞれバルブを介して純水供給管を接続したことを特徴
とする基板処理装置を提供する。
In order to achieve the above object, according to the present invention, there is provided an overflow type comprising an inner tank for immersing a substrate to treat the surface of the substrate and an outer tank for collecting a liquid overflowing from the inner tank. A processing tank, a processing liquid recovery pipe for recovering the processing liquid from the inner tank to a recovery tank for temporarily storing the processing liquid, a processing liquid supply pipe for supplying the processing liquid from the recovery tank to the inner tank, In a substrate processing apparatus having a circulation pipe for sending a processing liquid from an outer tank to an inner tank, and a drain pipe provided in each of the inner tank and the outer tank, the processing liquid supply pipe, the processing liquid recovery pipe, the circulation pipe, and the drain Provided is a substrate processing apparatus, wherein a pure water supply pipe is connected to a pipe via a valve.

【0017】この構成によれば、基板処理装置に接続さ
れる全ての配管に純水が供給されるため、全ての配管内
を含め、装置全体を効率的に短時間で洗浄することがで
き、また回収タンク内の洗浄も可能となり薬液混合の恐
れがなくなり、純水の使用量も抑えることができる。
According to this configuration, since pure water is supplied to all the pipes connected to the substrate processing apparatus, the entire apparatus including all the pipes can be efficiently cleaned in a short time. In addition, the inside of the recovery tank can be washed, and there is no danger of mixing chemicals, and the amount of pure water used can be reduced.

【0018】好ましい構成例においては、前記回収タン
クに、温度調整ユニットを備えたことを特徴としてい
る。
In a preferred embodiment, the recovery tank is provided with a temperature adjusting unit.

【0019】この構成によれば、回収タンク内の薬液の
温度調整を行うことによりタンク内薬液温度を処理槽内
での処理温度と同等に保つことができ、基板処理時間の
短縮を図ることができる。
According to this configuration, by adjusting the temperature of the chemical in the recovery tank, the temperature of the chemical in the tank can be kept equal to the processing temperature in the processing tank, and the substrate processing time can be reduced. it can.

【0020】好ましい構成例においては、前記処理槽内
の薬液濃度または混合比を計測し、その計測結果に基づ
いて薬液を供給し、処理液濃度を保つ濃度調整手段を備
えたことを特徴としている。
In a preferred configuration example, there is provided a concentration adjusting means for measuring a chemical solution concentration or a mixing ratio in the processing tank, supplying a chemical solution based on the measurement result, and maintaining the processing solution concentration. .

【0021】この構成によれば、水洗用の残留純水との
混合その他の原因で薬液濃度が変化しても、その濃度を
適宜計測し、薬液を常に一定の濃度に保つことができ、
基板処理の信頼性が高まる。
According to this configuration, even if the concentration of the chemical solution changes due to mixing with the residual pure water for washing or other causes, the concentration can be appropriately measured and the chemical solution can be always kept at a constant concentration.
The reliability of substrate processing is improved.

【0022】好ましい構成例においては、前記回収タン
クは、純水供給管とドレン配管を有することを特徴とし
ている。
In a preferred embodiment, the recovery tank has a pure water supply pipe and a drain pipe.

【0023】この構成によれば、薬液を溜めておく回収
タンクに純水を供給して直接洗浄可能なため、古い回収
薬液を新しい薬液に換える場合等にタンク内を洗浄して
新液と旧液との混合を避けることができ、信頼性の高い
薬液処理ができる。
According to this configuration, since pure water can be directly supplied to the recovery tank for storing the chemical liquid and the cleaning liquid can be directly washed, the tank can be washed and replaced with the new liquid when replacing the old recovered chemical liquid with a new chemical liquid. Mixing with a liquid can be avoided, and highly reliable chemical liquid processing can be performed.

【0024】[0024]

【発明の実施の形態】以下、図面を参照して本発明の実
施の形態について説明する。図1は本発明の実施の形態
に係る基板処理装置の構成図である。基板を処理する処
理槽1は、外槽2と内槽3からなる。外槽2には、外槽
2内の薬液を内槽3に送る循環配管8が設けられてい
る。この循環配管8からは、バルブ33を介して薬液を
一時溜めておく回収タンク12に外槽2内の薬液を送る
外槽処理液回収管14が分岐して設けられている。内槽
3には、内槽3内の薬液をバルブ34を介して回収タン
ク12に送る内槽処理液回収管13と、回収タンク12
からバルブ35、ポンプ18、フィルター19、バルブ
36を介して薬液が供給される処理液供給管21が設け
られている。また、外槽2、内槽3、回収タンク12の
各々に、処理液を排出するドレン配管15が設けられて
いる。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a configuration diagram of a substrate processing apparatus according to an embodiment of the present invention. A processing tank 1 for processing a substrate includes an outer tank 2 and an inner tank 3. The outer tank 2 is provided with a circulation pipe 8 that sends the chemical solution in the outer tank 2 to the inner tank 3. From the circulation pipe 8, an outer tank processing liquid recovery pipe 14 that sends the chemical in the outer tank 2 to a recovery tank 12 for temporarily storing the chemical via a valve 33 is provided in a branched manner. The inner tank 3 includes an inner tank processing liquid collection pipe 13 for sending the chemical solution in the inner tank 3 to the collection tank 12 via the valve 34, and a collection tank 12.
There is provided a processing liquid supply pipe 21 to which a chemical is supplied through a valve 35, a pump 18, a filter 19, and a valve 36. Further, a drain pipe 15 for discharging the processing liquid is provided in each of the outer tank 2, the inner tank 3, and the recovery tank 12.

【0025】循環配管8の外槽接続側にはバルブ46を
介して純水配管16が接続される。この循環配管8に
は、バルブ31、ポンプ9およびフィルター10が設け
られ、バルブ34を介して内槽3の底部に接続される。
The pure water pipe 16 is connected to the outer pipe connection side of the circulation pipe 8 via a valve 46. The circulation pipe 8 is provided with a valve 31, a pump 9 and a filter 10, and is connected to the bottom of the inner tank 3 via a valve 34.

【0026】内槽3の底部に接続された4本の各配管お
よび外槽2の底部に接続された2本の各配管の全てに対
し、それぞれ図示したようにバルブ41〜46を介して
純水供給管16が接続される。また回収タンク12には
純水供給管16とともにドレン配管15が接続される。
内槽3、外槽2および回収タンク12の各ドレン配管1
5上にはそれぞれバルブ37、38、39が設けられ
る。
The four pipes connected to the bottom of the inner tank 3 and the two pipes connected to the bottom of the outer tank 2 are all connected via valves 41 to 46 as shown in FIG. The water supply pipe 16 is connected. A drain pipe 15 is connected to the recovery tank 12 together with a pure water supply pipe 16.
Each drain pipe 1 of the inner tank 3, the outer tank 2, and the collection tank 12
5 are provided with valves 37, 38, and 39, respectively.

【0027】このような構成による基板処理のフロー
は、処理槽に薬液供給、薬液循環による基板処理、
薬液回収、純水供給による水洗、純水排出、回
収タンクよる薬液供給となる。この場合、の水洗完了
後基板を移動させて、次の基板処理の準備をしてもよい
し、別の薬液処理を行う場合には後述のようにの純水
排出後に薬液供給管または別の回収タンクから薬液を供
給して薬液処理を繰り返す。以下、このようなフローの
一例についてさらに詳しく説明する。
The flow of substrate processing by such a configuration is as follows.
Chemical liquid recovery, water washing with pure water supply, pure water discharge, and chemical liquid supply from a recovery tank are performed. In this case, the substrate may be moved after the completion of the water washing to prepare for the next substrate processing, or when another chemical processing is performed, a chemical supply pipe or another chemical processing pipe is used after pure water discharge as described later. The chemical is supplied from the recovery tank and the chemical processing is repeated. Hereinafter, an example of such a flow will be described in more detail.

【0028】基板11を処理する処理液(この場合薬
液)20を調整するため、複数の薬液は各々の秤量タン
ク4内に溜められ、液面計5でその量を調整され、薬液
供給管6を介して外槽2に供給される。この処理液の濃
度調整は純水供給管7より供給される純水によって行わ
れる。このようにして供給された処理液は、外槽2から
内槽3に循環配管8を介して送られる。この時、バルブ
31、32を開にし、他のバルブは閉じておく(後述の
表1参照)。
In order to adjust the processing liquid (chemical liquid in this case) 20 for processing the substrate 11, a plurality of chemical liquids are stored in the respective weighing tanks 4, the amounts of which are adjusted by the liquid level gauge 5, and the chemical liquid supply pipes 6. Is supplied to the outer tank 2 via The concentration adjustment of the treatment liquid is performed by pure water supplied from a pure water supply pipe 7. The processing liquid supplied in this manner is sent from the outer tank 2 to the inner tank 3 via the circulation pipe 8. At this time, the valves 31 and 32 are opened, and the other valves are closed (see Table 1 described later).

【0029】この循環配管8には、ポンプ9が備えてあ
り、このポンプ9によって外槽2内の薬液はフィルター
10を通って薬液内のパーティクルを除去して内槽3に
送られる。このようにして処理液の循環を行うことがで
きる。また、この循環配管には、必要に応じて配管内の
脈動を低減するダンパーやヒーターなどの温度調節ユニ
ットを具備してもよい。
A pump 9 is provided in the circulation pipe 8, and the chemical in the outer tank 2 is removed by the pump 9 to remove particles in the chemical through the filter 10 and sent to the inner tank 3. In this way, the processing liquid can be circulated. Further, the circulation pipe may be provided with a temperature control unit such as a damper or a heater for reducing pulsation in the pipe, if necessary.

【0030】所定の時間基板を浸漬処理した後、処理液
は再利用のため回収タンク12に回収される。このと
き、バルブ31、32、33、34を開とし他のバルブ
は閉じる。またポンプ9は動作させる。これにより、内
槽の処理液は内槽処理液回収管13およびバルブ34を
通り回収タンク12に収容され、外槽の処理液はポンプ
9を介して外槽処理液回収管14およびバルブ33を通
り、処理液は全て回収タンク12に回収される。
After the substrate has been immersed for a predetermined period of time, the processing liquid is recovered in the recovery tank 12 for reuse. At this time, the valves 31, 32, 33, and 34 are opened, and the other valves are closed. The pump 9 is operated. Thereby, the processing liquid in the inner tank passes through the inner tank processing liquid recovery pipe 13 and the valve 34 and is stored in the recovery tank 12, and the processing liquid in the outer tank flows through the pump 9 to the outer tank processing liquid recovery pipe 14 and the valve 33. As a result, all the processing liquid is collected in the collection tank 12.

【0031】処理液の回収作業が終了すると、処理槽内
に純水を供給して装置内の水洗を行う。この時、バルブ
41、42、43、44、45、46を開として純水を
処理槽に供給する。これにより、処理槽内及び各配管が
純水で充満する。この洗浄処理中、その排液はバルブ3
8を開として、外槽に設けられたドレン配管15から排
出する。また、ポンプ9は止めておく。これにより、配
管中に残されたもしくは進入した薬液は排出される。こ
のように純水供給管16を処理槽1に接続された全ての
配管に接続することによって、配管内の処理液が迅速に
洗浄可能となり、配管洗浄時間の短縮となるため、純水
の使用量も抑えられる。
When the processing liquid recovery operation is completed, pure water is supplied into the processing tank to wash the inside of the apparatus. At this time, the valves 41, 42, 43, 44, 45, and 46 are opened to supply pure water to the treatment tank. Thereby, the inside of a processing tank and each piping are filled with pure water. During this cleaning process, the drainage is
8 is opened and discharged from a drain pipe 15 provided in the outer tank. Also, the pump 9 is stopped. As a result, the chemical solution left or entered in the pipe is discharged. By connecting the pure water supply pipe 16 to all the pipes connected to the processing tank 1 in this manner, the processing liquid in the pipe can be quickly cleaned, and the time for cleaning the pipe can be shortened. The amount is also reduced.

【0032】さらに水洗の際、バルブ47を開として純
水をシャワー17より外槽2の内壁に噴出して内壁に付
着した処理液を除去する。この時、シャワー17の跳ね
返りによる基板11への再付着を避けるため、内槽3内
の基板の上端よりも水面が上がった状態で行う。これら
純水供給及びシャワーを一定時間行うことにより、基板
11及び処理槽1の水洗は完了する。完了後、基板11
は搬送手段(図示しない)によって次の製造工程に搬送
される。その後、バルブ37、38を開として内槽3お
よび外槽2内の純水をドレン配管15より全て排出す
る。
Further, at the time of washing with water, the valve 47 is opened, and pure water is spouted from the shower 17 onto the inner wall of the outer tub 2 to remove the processing liquid adhering to the inner wall. At this time, in order to avoid reattachment to the substrate 11 due to the rebound of the shower 17, the water level is higher than the upper end of the substrate in the inner tank 3. By performing the pure water supply and the shower for a certain period of time, the water washing of the substrate 11 and the processing tank 1 is completed. After completion, the substrate 11
Is transported to the next manufacturing step by a transport means (not shown). Thereafter, the valves 37 and 38 are opened to discharge all the pure water in the inner tank 3 and the outer tank 2 from the drain pipe 15.

【0033】異なる薬液で同じ基板に対しもう一度処理
する場合は、複数の循環配管と回収タンクを用意して、
処理を行うこともできる。その場合各回収タンクから処
理槽に処理液を順番に流す手順で行う。このような場
合、先に用いた処理液との混合による生成物がパーティ
クルとなる心配があるが、本発明の処理装置では上述し
たように処理槽や配管内の水洗が完全に行われるため、
その問題はない。
When processing the same substrate once again with different chemicals, prepare a plurality of circulation pipes and a collection tank,
Processing can also be performed. In this case, the process is performed in such a manner that the processing liquid is sequentially flown from each recovery tank to the processing tank. In such a case, there is a concern that a product produced by mixing with the processing liquid used previously becomes particles, but in the processing apparatus of the present invention, the processing tank and the pipe are completely washed with water as described above,
No problem.

【0034】処理槽1内の純水を全て排出し終えたら、
バルブ35、36を開として、ポンプ18を動作させ
る。回収タンク12内の薬液は処理液供給管21を通っ
て、フィルター19によりパーティクルを除去された
後、処理槽1で再利用される。よって処理液の使用量を
抑えることができる。
When all the pure water in the processing tank 1 has been discharged,
The pump 18 is operated by opening the valves 35 and 36. The chemical in the recovery tank 12 passes through the processing liquid supply pipe 21, and after the particles are removed by the filter 19, is reused in the processing tank 1. Therefore, the amount of the processing liquid used can be reduced.

【0035】このような回収タンク内の薬液は繰り返し
再利用された後適宜新液と交換される。この場合は、バ
ルブ39を開として旧液を排出する。この回収タンク1
2には純水供給管16が備えてあり、旧液を排出した
後、バルブ48を開として純水を供給し、これを排出し
てまた純水を供給し、このシーケンスを数回繰り返すこ
とにより回収タンク12内の洗浄が可能となる。これに
より新液と旧液の混合が避けられ、新液をより純度の高
いまま使用できる。
The chemical in such a recovery tank is repeatedly reused and then appropriately replaced with a new liquid. In this case, the old liquid is discharged by opening the valve 39. This collection tank 1
2 is provided with a pure water supply pipe 16. After draining the old liquid, the valve 48 is opened to supply pure water, and the pure water is discharged and supplied again. This sequence is repeated several times. Thereby, the inside of the collection tank 12 can be washed. As a result, mixing of the new solution and the old solution can be avoided, and the new solution can be used with higher purity.

【0036】上述してきた基板処理中の一連のバルブ開
閉とポンプの動作を表1に示した。なお、この表1にお
いて、「−」はバルブの閉、ポンプの静止を意味する。
Table 1 shows a series of valve opening / closing operations and pump operations during the substrate processing described above. In Table 1, "-" means that the valve is closed and the pump is stopped.

【0037】[0037]

【表1】 [Table 1]

【0038】図2は、本発明に係る基板処理装置に、温
度調整ユニットを備えた構成図である。基板処理に用い
られる処理液によっては温度調整を要する場合がある。
この時、回収タンク12に対する循環配管22を設け、
ポンプ23を動作させることによって処理液はフィルタ
ー24を通り、循環配管上のヒーターまたは電子冷熱ユ
ニット等からなる温度調整ユニット25で温度調整され
る。このように回収タンク12内で温度調整を行うこと
により、タンク内薬液温度を基板処理に必要な温度に保
っておくことができ、次の基板処理までの時間の短縮に
なる。
FIG. 2 is a block diagram showing a substrate processing apparatus according to the present invention provided with a temperature adjusting unit. Temperature adjustment may be required depending on the processing liquid used for substrate processing.
At this time, a circulation pipe 22 for the recovery tank 12 is provided,
By operating the pump 23, the processing liquid passes through the filter 24, and the temperature is adjusted by a temperature adjustment unit 25 including a heater or an electronic cooling / heating unit on the circulation pipe. By performing the temperature adjustment in the collection tank 12 in this manner, the temperature of the chemical solution in the tank can be maintained at a temperature required for substrate processing, and the time until the next substrate processing is shortened.

【0039】また、前述の回収タンク12内の旧液と新
液の交換の際、この循環配管22を用いて攪拌しながら
回収タンク12の洗浄を行うことができるので洗浄時間
の短縮になる。その他の配管などの構成および作用効果
は前述の図1の例と同様である。
When the old liquid and the new liquid in the recovery tank 12 are exchanged, the recovery tank 12 can be cleaned while stirring using the circulation pipe 22, so that the cleaning time is shortened. Other configurations such as piping and the operation and effect are the same as those in the example of FIG. 1 described above.

【0040】図3は、本発明に係る基板処理装置に、濃
度調整手段を備えた構成図である。再利用される薬液
は、処理槽1に供給された時点で、処理槽内壁に付着し
ている純水、処理液供給管21に存在する純水、バルブ
31、32、34、37、38と処理槽1の間に存在す
る純水等と混合する恐れがある。この純水との混合によ
る処理液の混合比変化が無視できるくらいの微量な範囲
ならば問題ないが、処理液の濃度が著しく変化する場合
もある。
FIG. 3 is a block diagram of a substrate processing apparatus according to the present invention, provided with a density adjusting means. When the chemical solution to be reused is supplied to the processing tank 1, pure water adhering to the inner wall of the processing tank, pure water existing in the processing liquid supply pipe 21, valves 31, 32, 34, 37, 38 There is a possibility of mixing with pure water or the like existing between the processing tanks 1. There is no problem as long as the change in the mixing ratio of the processing solution due to the mixing with the pure water is negligibly small, but the concentration of the processing solution may significantly change.

【0041】本実施形態ではこの点に対処して、循環配
管8上に濃度計測器(または混合比計測器)26を設
け、純水により薄まって不足している薬液または混合比
が変化した薬液を適宜秤量して処理槽1に供給する。こ
の場合、濃度などの計測値に応じて薬液秤量系100の
バルブなどを自動調整するようにフィードバック制御を
行うことも可能である。これにより常に適切な薬液濃度
条件で処理液を使用することができ処理の信頼性が高め
られる。
In the present embodiment, in order to cope with this point, a concentration measuring device (or a mixing ratio measuring device) 26 is provided on the circulation pipe 8 so as to be diluted with pure water and a chemical solution that is insufficient or a chemical solution having a changed mixing ratio. Is appropriately weighed and supplied to the processing tank 1. In this case, it is also possible to perform feedback control such that a valve or the like of the chemical solution weighing system 100 is automatically adjusted according to a measured value such as a concentration. As a result, the processing solution can always be used under appropriate chemical solution concentration conditions, and the reliability of the processing is improved.

【0042】[0042]

【発明の効果】以上説明したように、本発明では、装置
の小型化によりクリーンルーム等のスペースの節約を図
り、また薬液の再利用により薬液自体の節約および廃液
処理用の薬液などの節約が図られるとともに、基板処理
装置の処理槽に接続された配管の全てに純水供給管を接
続するので、洗浄効率が上がり、純水の使用量を抑え、
コストの低減を図ることができる。
As described above, according to the present invention, the space of a clean room or the like can be saved by reducing the size of the apparatus, and the chemical solution itself can be saved and the chemical solution for waste liquid treatment can be saved by reusing the chemical solution. In addition, since pure water supply pipes are connected to all of the pipes connected to the processing tank of the substrate processing apparatus, the cleaning efficiency is increased, the amount of pure water used is reduced,
Cost can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の実施の形態に係る基板処理装置の構
成図。
FIG. 1 is a configuration diagram of a substrate processing apparatus according to an embodiment of the present invention.

【図2】 本発明に係る基板処理装置に温度調整ユニッ
トを備えた構成図。
FIG. 2 is a configuration diagram including a temperature adjustment unit in the substrate processing apparatus according to the present invention.

【図3】 本発明に係る基板処理装置に濃度調整手段を
備えた構成図。
FIG. 3 is a configuration diagram of a substrate processing apparatus according to the present invention including a density adjusting unit.

【図4】 半導体装置製造プロセスにおける洗浄工程の
フローチャート。
FIG. 4 is a flowchart of a cleaning step in a semiconductor device manufacturing process.

【図5】 従来の多槽型洗浄装置の概略図。FIG. 5 is a schematic view of a conventional multi-tank cleaning apparatus.

【図6】 従来の多槽型処理装置の薬液処理槽の詳細構
成図。
FIG. 6 is a detailed configuration diagram of a chemical treatment tank of a conventional multi-tank treatment apparatus.

【図7】 基板処理装置の小型化を図るための装置構成
図。
FIG. 7 is an apparatus configuration diagram for reducing the size of the substrate processing apparatus.

【図8】 水中置換方式の説明図。FIG. 8 is an explanatory diagram of an underwater replacement system.

【符号の説明】[Explanation of symbols]

1:処理槽、2:外槽、3:内槽、4:秤量タンク、
5:液面計、6:薬液供給管、7:純水供給管、8循環
配管、9:ポンプ、10:フィルター、11:基板、1
2回収タンク、13:内槽処理液回収管、14:外槽処
理液回収管、15:ドレン配管、16:純水供給管、1
7:シャワー、18:ポンプ、19:フィルター、2
0:処理液、21:処理液供給管、22:循環配管、2
3:ポンプ、24:フィルター、25:温度調整ユニッ
ト、26:濃度計測器、100:薬液秤量系。
1: processing tank, 2: outer tank, 3: inner tank, 4: weighing tank,
5: Level gauge, 6: Chemical supply pipe, 7: Pure water supply pipe, 8 circulation pipe, 9: Pump, 10: Filter, 11: Substrate, 1
2 recovery tank, 13: inner tank processing liquid recovery pipe, 14: outer tank processing liquid recovery pipe, 15: drain pipe, 16: pure water supply pipe, 1
7: shower, 18: pump, 19: filter, 2
0: treatment liquid, 21: treatment liquid supply pipe, 22: circulation pipe, 2
3: pump, 24: filter, 25: temperature adjustment unit, 26: concentration meter, 100: chemical solution weighing system.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】基板を浸漬して基板表面の処理を行う内槽
とこの内槽からオーバーフローした液を回収する外槽か
らなるオーバーフロー型の処理槽と、 この内槽から処理液を一時的に溜めておく回収タンクに
処理液を回収する処理液回収管と、 前記回収タンクから内槽に処理液を供給する処理液供給
管と、 外槽から内槽に処理液を送る循環配管と、 前記内槽と外槽の各々に設けたドレン配管とを有する基
板処理装置において、 前記処理液供給管、処理液回収管、循環配管およびドレ
ン配管に対しそれぞれバルブを介して純水供給管を接続
したことを特徴とする基板処理装置。
1. An overflow type processing tank comprising an inner tank for immersing a substrate to treat the surface of the substrate, an outer tank for collecting a liquid overflowing from the inner tank, and a processing liquid temporarily stored in the inner tank. A treatment liquid collection pipe for collecting the treatment liquid in a collection tank for storing the treatment liquid, a treatment liquid supply pipe for supplying the treatment liquid from the collection tank to the inner tank, a circulation pipe for sending the treatment liquid from the outer tank to the inner tank, In a substrate processing apparatus having a drain pipe provided in each of an inner tank and an outer tank, a pure water supply pipe is connected to each of the processing liquid supply pipe, the processing liquid recovery pipe, the circulation pipe, and the drain pipe via a valve. A substrate processing apparatus characterized by the above-mentioned.
【請求項2】前記回収タンクは、温度調整ユニットを備
えたことを特徴とする請求項1に記載の基板処理装置。
2. The substrate processing apparatus according to claim 1, wherein the collection tank includes a temperature adjustment unit.
【請求項3】前記処理槽内の薬液濃度または混合比を計
測し、その計測結果に基づいて薬液を供給し、処理液濃
度を保つ濃度調整手段を備えたことを特徴とする請求項
1に記載の基板処理装置。
3. The apparatus according to claim 1, further comprising a concentration adjusting means for measuring a concentration or a mixing ratio of the chemical in the processing tank, supplying a chemical based on the measurement result, and maintaining the concentration of the processing liquid. The substrate processing apparatus according to any one of the preceding claims.
【請求項4】前記回収タンクは、純水供給管とドレン配
管を有することを特徴とする請求項1に記載の基板処理
装置。
4. The substrate processing apparatus according to claim 1, wherein the recovery tank has a pure water supply pipe and a drain pipe.
JP35976798A 1998-12-17 1998-12-17 Substrate-processing apparatus Pending JP2000183024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35976798A JP2000183024A (en) 1998-12-17 1998-12-17 Substrate-processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35976798A JP2000183024A (en) 1998-12-17 1998-12-17 Substrate-processing apparatus

Publications (1)

Publication Number Publication Date
JP2000183024A true JP2000183024A (en) 2000-06-30

Family

ID=18466196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35976798A Pending JP2000183024A (en) 1998-12-17 1998-12-17 Substrate-processing apparatus

Country Status (1)

Country Link
JP (1) JP2000183024A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003297798A (en) * 2002-03-29 2003-10-17 Seiko Epson Corp Treatment device and method for manufacturing semiconductor device
CN1324659C (en) * 2002-04-09 2007-07-04 夏普株式会社 Semiconductor wafer cleaning apparatus
JP2007317927A (en) * 2006-05-26 2007-12-06 Tokyo Electron Ltd Unit and method for processing substrate
JP2008198689A (en) * 2007-02-09 2008-08-28 Dainippon Screen Mfg Co Ltd Substrate-treating device
KR100898045B1 (en) * 2007-09-27 2009-05-19 세메스 주식회사 Substrate treatment apparatus and method for supplying chemical of the same
CN102956470A (en) * 2011-08-25 2013-03-06 大日本网屏制造株式会社 Substrate treating apparatus
CN115921410A (en) * 2022-12-14 2023-04-07 西安奕斯伟材料科技有限公司 Cleaning system and method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003297798A (en) * 2002-03-29 2003-10-17 Seiko Epson Corp Treatment device and method for manufacturing semiconductor device
CN1324659C (en) * 2002-04-09 2007-07-04 夏普株式会社 Semiconductor wafer cleaning apparatus
JP2007317927A (en) * 2006-05-26 2007-12-06 Tokyo Electron Ltd Unit and method for processing substrate
JP2008198689A (en) * 2007-02-09 2008-08-28 Dainippon Screen Mfg Co Ltd Substrate-treating device
KR100898045B1 (en) * 2007-09-27 2009-05-19 세메스 주식회사 Substrate treatment apparatus and method for supplying chemical of the same
CN102956470A (en) * 2011-08-25 2013-03-06 大日本网屏制造株式会社 Substrate treating apparatus
CN115921410A (en) * 2022-12-14 2023-04-07 西安奕斯伟材料科技有限公司 Cleaning system and method

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