IT8025290A0 - MOSFET DEVICE. - Google Patents

MOSFET DEVICE.

Info

Publication number: IT8025290A0
Authority: IT; Italy
Prior art keywords: mosfet device; mosfet
Prior art date: 1979-10-30

Application number

IT8025290A

Other languages

Italian (it)

Other versions

IT1133869B (en

Inventor

Lawrence Alan Goodman

Original Assignee

Rca Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-10-30

Filing date

1980-10-13

Publication date

1980-10-13

1980-10-13 Application filed by Rca Corp filed Critical Rca Corp

1980-10-13 Publication of IT8025290A0 publication Critical patent/IT8025290A0/en

1986-07-24 Application granted granted Critical

1986-07-24 Publication of IT1133869B publication Critical patent/IT1133869B/en

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs

IT25290/80A 1979-10-30 1980-10-13 MOSFET DEVICE IT1133869B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US8931579A	1979-10-30	1979-10-30

Publications (2)

Publication Number	Publication Date
IT8025290A0 true IT8025290A0 (en)	1980-10-13
IT1133869B IT1133869B (en)	1986-07-24

Family

ID=22216966

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT25290/80A IT1133869B (en)	1979-10-30	1980-10-13	MOSFET DEVICE

Country Status (7)

Country	Link
JP (1)	JPS5673472A (en)
DE (1)	DE3039803A1 (en)
FR (1)	FR2469003A1 (en)
GB (1)	GB2062349A (en)
IT (1)	IT1133869B (en)
SE (1)	SE8007492L (en)
YU (1)	YU278180A (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS58153368A (en) *	1982-03-09	1983-09-12	Toshiba Corp	Insulated gate field effect transistor
JPS5998557A (en) *	1982-11-27	1984-06-06	Nissan Motor Co Ltd	Mos transistor
US4803532A (en) *	1982-11-27	1989-02-07	Nissan Motor Co., Ltd.	Vertical MOSFET having a proof structure against puncture due to breakdown
US4567644A (en) *	1982-12-20	1986-02-04	Signetics Corporation	Method of making triple diffused ISL structure
US4974059A (en) *	1982-12-21	1990-11-27	International Rectifier Corporation	Semiconductor high-power mosfet device
DE3465225D1 (en) *	1983-02-17	1987-09-10	Nissan Motor	A vertical-type mosfet and method of fabricating the same
US4743952A (en) *	1983-04-04	1988-05-10	General Electric Company	Insulated-gate semiconductor device with low on-resistance
CA1216968A (en) *	1983-09-06	1987-01-20	Victor A.K. Temple	Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short
US4837606A (en) *	1984-02-22	1989-06-06	General Electric Company	Vertical MOSFET with reduced bipolar effects
US4587713A (en) *	1984-02-22	1986-05-13	Rca Corporation	Method for making vertical MOSFET with reduced bipolar effects
JPS60196974A (en) *	1984-03-19	1985-10-05	Toshiba Corp	Conductivity modulation type MOSFET
EP0199293B2 (en) *	1985-04-24	1995-08-30	General Electric Company	Insulated gate semiconductor device
JPS63141375A (en) *	1986-12-03	1988-06-13	Fuji Electric Co Ltd	Insulated gate field effect transistor
TW399774U (en) *	1989-07-03	2000-07-21	Gen Electric	FET, IGBT and MCT structures to enhance operating characteristics
JP2503900B2 (en) *	1993-07-30	1996-06-05	日本電気株式会社	Semiconductor device and motor driver circuit using the same
US5701023A (en) *	1994-08-03	1997-12-23	National Semiconductor Corporation	Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
DE19828494B4 (en) *	1998-06-26	2005-07-07	Robert Bosch Gmbh	MOSFET device with protective device against switching through a parasitic transistor
US6683349B1 (en) *	1999-10-29	2004-01-27	Sanyo Electric Co., Ltd.	Semiconductor device and method of manufacturing the same
JP5588671B2 (en)	2008-12-25	2014-09-10	ローム株式会社	Manufacturing method of semiconductor device
JP6168370B2 (en) *	2015-12-17	2017-07-26	ローム株式会社	SiC field effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3923553A (en) *	1969-10-14	1975-12-02	Kogyo Gijutsuin	Method of manufacturing lateral or field-effect transistors
US4145703A (en) *	1977-04-15	1979-03-20	Supertex, Inc.	High power MOS device and fabrication method therefor

1980
- 1980-10-13 IT IT25290/80A patent/IT1133869B/en active
- 1980-10-22 DE DE19803039803 patent/DE3039803A1/en not_active Withdrawn
- 1980-10-24 SE SE8007492A patent/SE8007492L/en not_active Application Discontinuation
- 1980-10-24 GB GB8034309A patent/GB2062349A/en not_active Withdrawn
- 1980-10-28 JP JP15197680A patent/JPS5673472A/en active Pending
- 1980-10-29 FR FR8023127A patent/FR2469003A1/en active Pending
- 1980-10-30 YU YU02781/80A patent/YU278180A/en unknown

Also Published As

Publication number	Publication date
SE8007492L (en)	1981-05-01
IT1133869B (en)	1986-07-24
JPS5673472A (en)	1981-06-18
YU278180A (en)	1982-10-31
DE3039803A1 (en)	1981-05-14
GB2062349A (en)	1981-05-20
FR2469003A1 (en)	1981-05-08

Publication	Publication Date	Title
IT8026328A0 (en)	1980-11-28	IMPROVED INJUREMENT DEVICE.
NO165224C (en)	1991-01-16	SERUM-SEPARATION DEVICE.
BR8002395A (en)	1980-12-02	DEBREADER DEVICE
NL7812026A (en)	1979-06-19	FIELD DEVICE DEVICE.
NL188115C (en)	1992-04-01	CLAMP DEVICE.
NL7902195A (en)	1979-09-25	CLAMP DEVICE.
IT8025290A0 (en)	1980-10-13	MOSFET DEVICE.
NL7901015A (en)	1979-08-13	LIMITING DEVICE.
NL7902239A (en)	1979-09-25	COOLING DEVICE.
ES240751Y (en)	1979-08-16	RETAINING DEVICE.
NO794296L (en)	1980-10-10	ELEVATOR DEVICE.
NL192728B (en)	1997-09-01	Extrusion device.
NO800097L (en)	1980-08-08	MATE DEVICE.
ES493729A0 (en)	1981-06-01	DEGASIFIER DEVICE
IT7928136A0 (en)	1979-12-18	IMPROVED MOSFET DEVICE.
IT8021911A0 (en)	1980-05-09	IMPROVED SWITCHING DEVICE.
ES255417Y (en)	1982-10-16	PERFECTED FASTENING DEVICE.
IT8021842A0 (en)	1980-05-07	SWITCHING DEVICE.
NL7903405A (en)	1979-11-21	CLAMPING DEVICE.
IT8019838A0 (en)	1980-02-11	SEMICONDUCTOR DEVICE.
IT8019546A0 (en)	1980-01-29	CONTROL DEVICE.
BR7906462A (en)	1980-12-02	ELECTRO-MAGENTIC DEVICE
BR8003245A (en)	1980-12-30	PURGATOR DEVICE
NO800797L (en)	1980-09-22	ATTACHING DEVICE.
DE3064879D1 (en)	1983-10-27	CONCENTRATOR-DECONCENTRATOR DEVICE